US3333982A - Process for the vapor deposition of material without thermal radiation of the substrate - Google Patents
Process for the vapor deposition of material without thermal radiation of the substrate Download PDFInfo
- Publication number
- US3333982A US3333982A US251325A US25132563A US3333982A US 3333982 A US3333982 A US 3333982A US 251325 A US251325 A US 251325A US 25132563 A US25132563 A US 25132563A US 3333982 A US3333982 A US 3333982A
- Authority
- US
- United States
- Prior art keywords
- heat
- vapor
- thermal radiation
- vapor deposition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Definitions
- This invention relates to a process, and more particularly to a process for depositing thin layers by thermal vaporization without thermal radiation loading of the receiver.
- the receptor In depositing thin layers by thermal vaporization of the material to be deposited from the vapor state (metals, semiconductors, and the like), the receptor is heated by the heat waves which accompany the vapor waves. In all the processes known heretofore, not only the vapor waves but also the heat waves get to the receiver; the increase in the receiver temperature so produced is generally undesired. For example, in the preparation of replica for electron microscopy, such radiant heat may change the sample to be examined.
- the process of the invention avoids impact of the heat waves on the receiver by making use of the circumstance that heat and vapor waves possess very difierent velocities.
- the process of this invention is useful, for example, in making replica for electron microscopy.
- the heat and vapor waves coming from the vapor source are broken down into impulses of definite length which, after a fixed transit time, are separated on the basis of their difiering rates of propagation.
- a hollow cylinder 1 which is rotated at'high speed by a motor 11. This motor is energized over power supplies 8.
- the hollow cylinder 1 is provided with slots 2 so that the heat and particle radiations emerging from the furnace 3 through the shield 4 are separated into impulses by means of the openings 2 and need different times for travelling through the diameter of the hollow cylinder because of their different propagation velocity.
- the particle rays the velocity of which is low (and a function of the furnace temperature and of the atomic weight of the material to be deposited) pass freely through the slots 2 and through the shield 7 and reach the receiver 6 if the rotation velocity of the hollow cylinder 1 is properly chosen.
- the heat rays on the other hand, which migrate with light velocity cannot pass through the slots 2 in the cylinder because of the geometrical arrangement thereof (the hatched area remains free from heat rays).
- the apparatus described is mounted on a base plate 9 and is arranged within an evacuated vessel 10.
- Another embodiment consists of shields with appropriately positioned openings.
- the shields positioned in fixed standolT from one another, are set in phase-displaced motion by conventional means (mechanical or electromechanical) so that penetration through the openings only by the vapor wavesbut not by the heat wavesis made possible.
- Example on a photosensitive support a gold layer is to be coated by vapor deposition.
- the evaporation temperature is 1770 K. (incandescent filament to white heat).
- this is for the purpose to indicate and satisfy the conditions that light never can pass the upper diaphragm and that the vapour-rays here possess a diameter B. Then the rotating cylinder (diameter D) even when it overlaps the lower diaphragm just overlaps the upper diaphragm by the distance b. A vapour-impulse which enters the cylinder through the lower diaphragm passes through the cylinder While it rotates by the distance b. In this way the vapour-impulse is able to leave the cylinder. Therefore the distance b represents an apparatus constant depending only on v (velocity on the periphery of the rotating cylinder) and on E (velocity of the vapour-rays).
- Process for depositing thin layers by thermal vaporization without thermal radiation loading of the receiver comprising separating the vapor waves coming from the vapor source from the accompanying heat waves by decomposing both types of Waves simultaneously into impulses of definite length, and catching the more rapid and therefore preceding heat wave impulses by a moving screen system while the relatively slower vapor wave impulses are allowed to pass through unhindered.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
H. F. HORN ETAL PROCESS FOR THE VAPOR DEPOSITION OF MATERIAL WITHOUT THERMAL RADIATION OF THE SUBSTRATE Filed Jan. 14, 1965 Fig. I
Fiq. 2.
r: AZCZI'AYTZI 'IlIIIII/IIIMI:
Aug. 1, 1967 United States Patent 3,333,982 PROCESS FOR'THE VAPOR DEPOSITION OF MA- TERIAL WITHOUT THERMAL RADIATION OF THE SUBSTRATE Herwig F. Hornand Adolf F. Aldrian, both of Rechbauerstrasse 12, Graz, Austria Filed Jan. 14, 1963, Ser. No. 251,325 Claims priority, application Austria, Jan. 16, 1962, A 303/62 1 Claim. (Cl. 117-106) This invention relates to a process, and more particularly to a process for depositing thin layers by thermal vaporization without thermal radiation loading of the receiver. In depositing thin layers by thermal vaporization of the material to be deposited from the vapor state (metals, semiconductors, and the like), the receptor is heated by the heat waves which accompany the vapor waves. In all the processes known heretofore, not only the vapor waves but also the heat waves get to the receiver; the increase in the receiver temperature so produced is generally undesired. For example, in the preparation of replica for electron microscopy, such radiant heat may change the sample to be examined.
The process of the invention avoids impact of the heat waves on the receiver by making use of the circumstance that heat and vapor waves possess very difierent velocities. The process of this invention is useful, for example, in making replica for electron microscopy.
In the devices embodying the principles of the invention, the heat and vapor waves coming from the vapor source are broken down into impulses of definite length which, after a fixed transit time, are separated on the basis of their difiering rates of propagation.
In the embodiment of the invention illustrated by the drawing, use is made of a hollow cylinder 1 which is rotated at'high speed by a motor 11. This motor is energized over power supplies 8. The hollow cylinder 1 is provided with slots 2 so that the heat and particle radiations emerging from the furnace 3 through the shield 4 are separated into impulses by means of the openings 2 and need different times for travelling through the diameter of the hollow cylinder because of their different propagation velocity. Thus, the particle rays the velocity of which is low (and a function of the furnace temperature and of the atomic weight of the material to be deposited) pass freely through the slots 2 and through the shield 7 and reach the receiver 6 if the rotation velocity of the hollow cylinder 1 is properly chosen. The heat rays, on the other hand, which migrate with light velocity cannot pass through the slots 2 in the cylinder because of the geometrical arrangement thereof (the hatched area remains free from heat rays). The apparatus described is mounted on a base plate 9 and is arranged within an evacuated vessel 10.
Other arrangements which likewise allow separation of the vapor waves from the heat rays are feasible in accord with the same inventive principle. Thus, instead of one hollow cylinder, two can be used which rotate in the same direction or counter to one another and are arranged one above the other or one inside the other.
The same goal is achieved with two disks rigidly connected by a common shaft when the disks are provided with openings adjustable with respect to one another about an appropriate angle. These disks are displaced such a number of revolutions that the vapor waves-but not the heat wavesare able to go through the openings to the receiver.
Another embodiment consists of shields with appropriately positioned openings. The shields, positioned in fixed standolT from one another, are set in phase-displaced motion by conventional means (mechanical or electromechanical) so that penetration through the openings only by the vapor wavesbut not by the heat wavesis made possible.
Example On a photosensitive support a gold layer is to be coated by vapor deposition. The evaporation temperature is 1770 K. (incandescent filament to white heat).
The mean velocity of the gold atoms which emerge from the vapor source is C=513 m.sec.-
This value can be calculated from the Maxwell equation.
T =absolute temperature M=atomic (molecular) Weight of the substance a=constant= 1.712X 10- Q 7r ,D2 for gold:
At a cylinder diameter of mm. and at a value of b=5.6 mm. the necessary rotation velocity follows to U=8600 r.p.m. At this rotation number the Au atoms of the velocity mentioned arrive at the support at the point A; faster atoms cannot penetrate through the cylinder, slower atoms impinge on the support at another point. Thus, an Au layer is formed on the substract without light rays (and/ or heat rays) impinging thereon.
With reference to the diagram as shown on FIG. 2, this is for the purpose to indicate and satisfy the conditions that light never can pass the upper diaphragm and that the vapour-rays here possess a diameter B. Then the rotating cylinder (diameter D) even when it overlaps the lower diaphragm just overlaps the upper diaphragm by the distance b. A vapour-impulse which enters the cylinder through the lower diaphragm passes through the cylinder While it rotates by the distance b. In this way the vapour-impulse is able to leave the cylinder. Therefore the distance b represents an apparatus constant depending only on v (velocity on the periphery of the rotating cylinder) and on E (velocity of the vapour-rays).
We claim:
Process for depositing thin layers by thermal vaporization without thermal radiation loading of the receiver comprising separating the vapor waves coming from the vapor source from the accompanying heat waves by decomposing both types of Waves simultaneously into impulses of definite length, and catching the more rapid and therefore preceding heat wave impulses by a moving screen system while the relatively slower vapor wave impulses are allowed to pass through unhindered.
References Cited ALFRED L. LEAVITT, Primary Examiner.
RICHARD D. NEVIUS, Examiner.
M. KAPLAN, J. P. MCINTOSH, W. L. JARVIS,
Assislant Examiners.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT30362A AT231530B (en) | 1962-01-16 | 1962-01-16 | Method and device for applying thin layers by thermal evaporation |
Publications (1)
Publication Number | Publication Date |
---|---|
US3333982A true US3333982A (en) | 1967-08-01 |
Family
ID=3486966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US251325A Expired - Lifetime US3333982A (en) | 1962-01-16 | 1963-01-14 | Process for the vapor deposition of material without thermal radiation of the substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US3333982A (en) |
AT (1) | AT231530B (en) |
CH (1) | CH418770A (en) |
GB (1) | GB1005341A (en) |
NL (1) | NL287577A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569706A (en) * | 1965-10-22 | 1971-03-09 | Physics Technology Lab Inc | Method and apparatus for generating a continuous beam of neutral atoms |
US4303694A (en) * | 1979-05-04 | 1981-12-01 | Daniel Bois | Method and device of deposition through vacuum evaporation making use _of a modulated electron beam and a screen |
US4543910A (en) * | 1983-10-17 | 1985-10-01 | Canadian Patents And Development Limited | Vapor deposition regulating apparatus |
US5133286A (en) * | 1989-04-14 | 1992-07-28 | Samsung Electro-Mechanics Co., Ltd. | Substrate-heating device and boat structure for a vacuum-depositing apparatus |
US5223038A (en) * | 1991-01-11 | 1993-06-29 | Leybold Ag | Apparatus for producing metal-free strips |
US20050061244A1 (en) * | 2003-07-04 | 2005-03-24 | Stefan Hein | Method and device for the localized application of parting means |
US20120027953A1 (en) * | 2010-07-28 | 2012-02-02 | Synos Technology, Inc. | Rotating Reactor Assembly for Depositing Film on Substrate |
US20150024538A1 (en) * | 2013-07-19 | 2015-01-22 | Tsmc Solar Ltd. | Vapor dispensing apparatus and method for solar panel |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010021547A1 (en) * | 2010-05-20 | 2011-11-24 | Konstantinos Fostiropoulos | Depositing thin films on substrates by vacuum deposition method, comprises heating coating material in form of vapor cloud in evaporation source until it vaporizes, and spreading evaporated coating material on surface of substrate |
CN115852316B (en) * | 2022-12-06 | 2024-11-26 | 合肥综合性国家科学中心能源研究院(安徽省能源实验室) | A high vacuum multi-source thermal evaporation coating equipment |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2160981A (en) * | 1935-10-19 | 1939-06-06 | O'brien Brian | Method and apparatus for producing thin wedges |
US2614524A (en) * | 1946-08-22 | 1952-10-21 | Rca Corp | Capacitor manufacturing evaporation apparatus |
US2948261A (en) * | 1956-12-07 | 1960-08-09 | Western Electric Co | Apparatus for producing printed wiring by metal vaporization |
US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
US3108560A (en) * | 1959-07-15 | 1963-10-29 | Gen Motors Corp | Means for assembling printed circuits with components |
-
0
- NL NL287577D patent/NL287577A/xx unknown
-
1962
- 1962-01-16 AT AT30362A patent/AT231530B/en active
-
1963
- 1963-01-08 CH CH16963A patent/CH418770A/en unknown
- 1963-01-11 GB GB1326/63A patent/GB1005341A/en not_active Expired
- 1963-01-14 US US251325A patent/US3333982A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2160981A (en) * | 1935-10-19 | 1939-06-06 | O'brien Brian | Method and apparatus for producing thin wedges |
US2614524A (en) * | 1946-08-22 | 1952-10-21 | Rca Corp | Capacitor manufacturing evaporation apparatus |
US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
US2948261A (en) * | 1956-12-07 | 1960-08-09 | Western Electric Co | Apparatus for producing printed wiring by metal vaporization |
US3108560A (en) * | 1959-07-15 | 1963-10-29 | Gen Motors Corp | Means for assembling printed circuits with components |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569706A (en) * | 1965-10-22 | 1971-03-09 | Physics Technology Lab Inc | Method and apparatus for generating a continuous beam of neutral atoms |
US4303694A (en) * | 1979-05-04 | 1981-12-01 | Daniel Bois | Method and device of deposition through vacuum evaporation making use _of a modulated electron beam and a screen |
US4543910A (en) * | 1983-10-17 | 1985-10-01 | Canadian Patents And Development Limited | Vapor deposition regulating apparatus |
US5133286A (en) * | 1989-04-14 | 1992-07-28 | Samsung Electro-Mechanics Co., Ltd. | Substrate-heating device and boat structure for a vacuum-depositing apparatus |
US5223038A (en) * | 1991-01-11 | 1993-06-29 | Leybold Ag | Apparatus for producing metal-free strips |
US20050061244A1 (en) * | 2003-07-04 | 2005-03-24 | Stefan Hein | Method and device for the localized application of parting means |
US20120027953A1 (en) * | 2010-07-28 | 2012-02-02 | Synos Technology, Inc. | Rotating Reactor Assembly for Depositing Film on Substrate |
US20150024538A1 (en) * | 2013-07-19 | 2015-01-22 | Tsmc Solar Ltd. | Vapor dispensing apparatus and method for solar panel |
Also Published As
Publication number | Publication date |
---|---|
CH418770A (en) | 1966-08-15 |
GB1005341A (en) | 1965-09-22 |
AT231530B (en) | 1964-02-10 |
NL287577A (en) |
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