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US3232716A - Device for pulling monocrystalline semiconductor rods - Google Patents

Device for pulling monocrystalline semiconductor rods Download PDF

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Publication number
US3232716A
US3232716A US76983A US7698360A US3232716A US 3232716 A US3232716 A US 3232716A US 76983 A US76983 A US 76983A US 7698360 A US7698360 A US 7698360A US 3232716 A US3232716 A US 3232716A
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US
United States
Prior art keywords
rod
semiconductor
pulling
melt
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US76983A
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English (en)
Inventor
Quast Hans-Friedrich
Rummel Theodor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
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Siemens and Halske AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG filed Critical Siemens and Halske AG
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Publication of US3232716A publication Critical patent/US3232716A/en
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Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Definitions

  • the necessary heating energy is supplied to the molten top of the thick rod by means of aring-shaped heater which surrounds the melt and preferably consists of an induction coil.
  • molten zone can be keptso small that thermal fluctuations donot' occur. We have found that this not only improves the dimensional uniformity of the product, but also more reliably prevents the dripping away, melting off or freezing of the melt.
  • the thin semiconductor rod through a slitted metal cap, preferably consisting of silver, which is conductively connected with the inductance coil or one of the turns thereof and which has an inner shape adapted to that of the upwardly bulging, molten zone.
  • a slitted metal cap preferably consisting of silver, which is conductively connected with the inductance coil or one of the turns thereof and which has an inner shape adapted to that of the upwardly bulging, molten zone.
  • FIGS. 1, 2, 3 and 4 illustrate four different embodiments of induction heater devices operating in accordance with the invention.
  • FIG. 5 is a schematic and partly sectional view of a crystal pulling apparatus applicable for the purpose of the invention.
  • a thick semiconductor rod 1 has its top portion melted.
  • the molten zone forms a mound shaped top above the solid portion of the rod.
  • the rod United States Patent 0 ice 1 consist of pure silicon, although the method is also applicable for the production of monocrystalline rods from germanium and other semiconductor materials.
  • a monocrystal seed is immersed into the melt 2 and is thereafter pulled out of the melt at uniform speed corresponding to the rate of recrystallization, so that a thin semiconductor rod 3 of constant diameter is produced.
  • the melt is kept heated by means of a high-frequency winding which is shown in FIG. 1 to comprise two spiral turns.
  • the inner diameter of the heater 4 is smaller than the diameter of the'rod 1, and the heater is located at the nascent end of the monocrystalline rod 3 as close to the molten zone 2 as is feasible without touching the melt.
  • the thin semiconductor rod 3 is pulled through a metal cap consisting preferably of silver-
  • the cap 5 is provided with a radial slit 7 and is connected with a high-frequency winding 6 which in this embodiment is constituted by a single turn.
  • the winding 6 and the metal cap 5 thus form together the heating device Whose high-frequency field supplies to the melt 2 the necessary heating energy during crystal pulling operation.
  • the semiconductor rod 1 is mounted in a protective gas atmosphere for example of nitrogen within a vessel consisting preferably of quartz.
  • the thin semiconductor rod 3 may be pulled out of the vessel through a suitable seal.
  • the heating device is moved in the direction of the arrow 12, Whereas the thick rod 1 may be fixedly held in the vessel.
  • the thin semiconductor rod 3 can be provided with doping substance during processing.
  • the power for thus preheating the top of the semiconductor rod is preferably supplied by heat conductance and/or heat radiation.
  • a cap 8 of molybdenum is first placed upon the top portion of the rod 1.
  • the cap 8 is then heated to incandescent temperature by the high-frequency winding 10-.
  • the heat thus produced in the cap 8 is'directly transmitted to the semiconductor rod 1 by heat conductance.
  • the electric conductance of the semiconductor material increases until the induction effect of the heater coil 4 suliices for completely melting the top and maintaining it in molten condition.
  • the heater 10 may be used for the latter purpose after removing the cap 8 and immersing the crystal seed into the melt.
  • the entire preheating device composed of parts #5 and 10 may be removed and the crystal pulling then performed by the means and in the manner described above with reference to FIGS. 1 and 2.
  • the preheating of the hyperpure semiconductor rod 1 which, when cold, possesses poor electric conductivity, is effected by heat radiation from a glowing molybdenum ring 9.
  • the molybdenum ring '7 may be heated by passing electric current therethrough.
  • the ring 9 may be slitted or may have one or more turns.
  • the top of the rod 1 is heated by the high-frequency coil 4 in accordance with FIG. 1 or by a device as shown in FIG. 2.
  • the molybdenum ring is moved in the direction of the arrow 11 and is thus also employed for preheating the material located beneath the molten top 2 and to be melted at a later time.
  • the high-frequency heating can be effected by radio frequency in the manner known as such for example from the book by N. B. Hannay, Semiconductors, Reinhold Publishing Corporation, New York, 1959, Chapter 3.
  • the method according to the invention affords the production of thin monocrystalline rods of silicon, germanium and the like, having a substantially constant diameter along the entire length of the rod being produced, the rod diameter being smaller than 5 mm. and satisfactorily constant even if made as small as 1 mm.
  • various semiconductor devices such as diodes or transistors can be produced.
  • the apparatus comprises a base plate 13 and a top plate 14 which, together with a quartz cylinder 15, form a processing chamber to be evacuated through an exhaust duct 16.
  • the thick semiconductor rod 1 is secured to the base 13 by means of a rigid holder 17.
  • the seed crystal and the resulting semiconductor rod 3 are attached to a holder 18 mounted on a support 19.
  • the support 19 is in threaded engagement with a screw spindle 20 which can be driven from the outside by an electric motor 26 and a worm gear 21 in order to lift the crystal seed and the rod 3 away from the top of the thick rod 1 to perform the crystal-pulling operation.
  • the above-described induction heater 4 and the resistance heater 9 are mounted on a support 23 which is in threaded engagement with another screw spindle 25.
  • Spindle 25 is revolvably journal led.
  • An electric motor 27 is provided for revolving the spindle 25 by means of a Worm gear 28.
  • the motor 27 is connected by electric leads to terminals 37 to re ceive therefrom the energizing current required for shifting the coil 4 and heater 9 so as to initiate and subsequently maintain the melting operation described above with reference to FIG. 4.
  • the induction coil 4 is connected to external terminals 34- 'to Which the necessary radio-frequency voltage is applied.
  • the resistance heater 9 is connected to external terminals 39 through which the suitable directcurrent or alternating line-frequency current is supplied.
  • the terminals of motor 26 are denoted by 40.
  • a device for pulling relatively thin monocryst-all-ine semiconductor rods out of the molten top mound of a thick semiconductor rod after immersing a crystal seed in the melt comprising an evacuable processing vessel,
  • said vessel for holding said two rods respectively in a vertical processing axis, one of said holders being movable axially away from the other for performing 'said pulling operation, a high-frequency heating device mounted in said vessel and coaxially surrounding the region where said molten top mound is located when said rods are inv serted into said respective holders, said heating device comprising a metal cap with a central aperture through which the end of the thin rod is pulled, said metal cap being radially slitted and covering said top mound of said thick rod when in operation, and said heating device comprising a high frequency coilcoaxially and conductively joined with said cap, the aperture of said cap having a'smaller diameter than the thick rod.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US76983A 1959-12-23 1960-12-19 Device for pulling monocrystalline semiconductor rods Expired - Lifetime US3232716A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66407A DE1141978B (de) 1959-12-23 1959-12-23 Verfahren zum Herstellen duenner einkristalliner Halbleiterstaebe

Publications (1)

Publication Number Publication Date
US3232716A true US3232716A (en) 1966-02-01

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ID=7498786

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Application Number Title Priority Date Filing Date
US76983A Expired - Lifetime US3232716A (en) 1959-12-23 1960-12-19 Device for pulling monocrystalline semiconductor rods

Country Status (6)

Country Link
US (1) US3232716A (fi)
CH (1) CH425736A (fi)
DE (1) DE1141978B (fi)
FR (1) FR1277468A (fi)
GB (1) GB906485A (fi)
NL (2) NL258961A (fi)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342970A (en) * 1964-02-08 1967-09-19 Siemens Ag Apparatus for crucible-free zone melting
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
US4060401A (en) * 1975-04-02 1977-11-29 National Research Development Corporation Method for making aligned fibrous crystals
US4292487A (en) * 1977-07-07 1981-09-29 Topsil A/S Method for initiating the float zone melting of semiconductors

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1256626B (de) * 1963-03-13 1967-12-21 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2814707A (en) * 1954-11-12 1957-11-26 Rca Corp Induction heating device
US2855335A (en) * 1955-01-14 1958-10-07 Int Standard Electric Corp Method of purifying semiconductor material
US2876324A (en) * 1957-11-29 1959-03-03 Sylvania Electric Prod Induction heating apparatus
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2961305A (en) * 1957-12-27 1960-11-22 Gen Electric Method of growing semiconductor crystals
DE1094711B (de) * 1959-05-08 1960-12-15 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstaeben, insbesondere aus Silizium
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL89230C (fi) * 1952-12-17 1900-01-01

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2814707A (en) * 1954-11-12 1957-11-26 Rca Corp Induction heating device
US2855335A (en) * 1955-01-14 1958-10-07 Int Standard Electric Corp Method of purifying semiconductor material
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2876324A (en) * 1957-11-29 1959-03-03 Sylvania Electric Prod Induction heating apparatus
US2961305A (en) * 1957-12-27 1960-11-22 Gen Electric Method of growing semiconductor crystals
DE1094711B (de) * 1959-05-08 1960-12-15 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstaeben, insbesondere aus Silizium
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342970A (en) * 1964-02-08 1967-09-19 Siemens Ag Apparatus for crucible-free zone melting
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
US4060401A (en) * 1975-04-02 1977-11-29 National Research Development Corporation Method for making aligned fibrous crystals
US4292487A (en) * 1977-07-07 1981-09-29 Topsil A/S Method for initiating the float zone melting of semiconductors

Also Published As

Publication number Publication date
CH425736A (de) 1966-12-15
NL258961A (fi)
DE1141978B (de) 1963-01-03
FR1277468A (fr) 1961-12-01
NL133150C (fi)
GB906485A (en) 1962-09-19

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