US3230609A - Method of providing alloy contacts on semi-conductor bodies - Google Patents
Method of providing alloy contacts on semi-conductor bodies Download PDFInfo
- Publication number
- US3230609A US3230609A US169819A US16981962A US3230609A US 3230609 A US3230609 A US 3230609A US 169819 A US169819 A US 169819A US 16981962 A US16981962 A US 16981962A US 3230609 A US3230609 A US 3230609A
- Authority
- US
- United States
- Prior art keywords
- alloying
- mass
- semi
- alkali metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title description 21
- 229910045601 alloy Inorganic materials 0.000 title description 12
- 239000000956 alloy Substances 0.000 title description 12
- 238000005275 alloying Methods 0.000 claims description 41
- 230000004907 flux Effects 0.000 claims description 24
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 14
- 150000008045 alkali metal halides Chemical class 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000007772 electrode material Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 18
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000008188 pellet Substances 0.000 description 9
- 235000013024 sodium fluoride Nutrition 0.000 description 9
- 239000011775 sodium fluoride Substances 0.000 description 9
- 239000011780 sodium chloride Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- -1 sodium halide Chemical class 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 235000003332 Ilex aquifolium Nutrition 0.000 description 1
- 235000002296 Ilex sandwicensis Nutrition 0.000 description 1
- 235000002294 Ilex volkensiana Nutrition 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- XYQHTNRFQRMNHB-UHFFFAOYSA-N [Sb].[Sn].[Au] Chemical compound [Sb].[Sn].[Au] XYQHTNRFQRMNHB-UHFFFAOYSA-N 0.000 description 1
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Definitions
- the invention relates to a method of providing an alloy contact on a semi-conductor body, in which an amount of an alloying material is disposed on the semi-conductor body and fused and/ or alloyed thereto at a temperature exceeding 500 C. with the use of a flux. Alloy contacts on semi-conductor bodies are used, for example, in semiconductive electrode systems, such as transistors and diodes.
- hydrochloric acid as a flux
- an aqueous solution of hydrochloric acid being provided separately from the alloying material and being heated in the alloying process.
- the hydrochloric acid readily evaporates so that it has completely disappeared at a temperature of 500 C. and hence no longer acts as a flux.
- the surface of the semi-conductor body and the alloying material may, however, be highly contaminated previously by the action of the vapour.
- the flux contains at least one alkali metal halide and it is provided separate from the alloying material and is also heated in the fusing and/or alloying process.
- Alkali metal halides generally are only slightly volatile at temperatures below 500 C. and gradually vaporize at temperatures above 500 C. so as to be capable of providing an even supply of a vapour of not excessive pressure promoting fusion to the alloying material and the surface of the semi-conductor body to be wetted by this material.
- the flux may be positioned in close proximity of the alloying material, its temperature may then be substantially equal to the temperature of the alloying material or somewhat lower due to the absorption of evaporation heat.
- the flux preferably contains an alkali metal fluoride.
- the flux contains a sodium halide.
- mixtures of sodium fluoride and sodium chloride for example mixtures of from 10 to 50% by weight of NaF, the remainder being NaCl, have proved highly suitable.
- sodium bromide and sodium iodide may be used in the method, solely or mixed together or mixed with sodium chloride and/or sodium fluoride.
- the iodide and bromide are suitable especially in cases of fluxing at temperatures above 500 C. and under 900 0., being somewhat more volatile than the chloride and fluoride.
- potassium halogenides solely or mixed are also suitable. The same applies for rubidium and caesium halogenides, which, however, are more expensive.
- the method according to the invention may be used in alloying contacts to many semi-conductor materials, for example germanium, it has proved particularly suited to the manufacture of alloy contacts on silicon bodies, specially in the processes of fusing or alloying at a temperature of at least 900 C. Such high temperatures are used, for example, when applying alloying materials consisting at least substantially of tin.
- alloying materials and semi-conductors with which the method may be carried out successfully are for instance alloying materials consisting substantially of lead, with germanium, and alloying materials consisting mainly of indium, with silicon.
- the invention is not limited to the above materials and the method may be used in many other cases, especially those in which suitable wetting of the surface of the semi-conductor body by the electrode material will occur at temperatures above 500 C.
- FIGURE 1 shows an alloying jig containing a semiconductor body on which is arranged a pellet of the material to be alloyed thereto.
- FIGURE 2 shows the same alloying jig as FIGURE 1 after being subjected to a heat treatment.
- FIGURE 3 shows another jig containing a semi-conductor body on which is arranged a pellet of alloying material.
- FIGURE 4 shows the same semi-conductor body as FIGURE 3 provided with an electrode alloyed thereto by heating.
- Example I an alloying jig 1 is used comprising a graphite body 2 and a cover plate 3 likewise made of graphiteand provided with an aperture 4 (FIGURE 1).
- a semi-conductor body 5 consisting of n-type silicon having a resistivity of 2 ohm-cm. is accommodated in a recess of the graphite body 2.
- An amount of about 1 mgm. of a powder 7 consisting of a eutectic mixture of 27.5 parts by weight of sodium fluoride and 72.5 par-ts by weightof sodium chloride is arranged in a cup-shaped recess 6 in the body 2.
- the cover plate 3 is then laid on the body 2 and subsequently a pellet 8 of aluminum is placed in the aperture 4 on the silicon body 5.
- the filled jig is inserted in a vitreous quartz tube 9.
- a stream of hydrogen is passed through this tube and the tube is put in a furnace, for example a tubular furnace, which is not shown.
- the alloying jig 1 is then heated to about 750 C. during about five minutes so that the pellet 8 melts.
- the mixture 7 then also melts and slowly vaporizes.
- the resulting vapour acts upon the molten aluminum and upon the surface of the silicon body 5 so that this surface is satisfactorily wetted by the molten aluminum.
- the aluminum is allowed with the subjacent silicon and the molten alloy penetrates-into the silicon body with a substantially flat front.
- Example II A semi-conductor body 21 of n type silicon having a resistivity of 1 ohm-cm. is arranged in a recess of a graphite jig 20 (FIGURE 3).
- a pellet 22 consisting of a tin alloy containing 0.5% by weight of aluminum is glued to the silicon body by means of an adhesive.
- a small amount of powdered sodium fluoride 24 is arranged in a cup-shaped recess 23.
- the filled jig is inserted into a vitreous quartz tube 25 and a stream of pure hydrogen is passed through the tube.
- the jig 20 is now heated to 1150 C. by means of a furnace (not shown) for 3 minutes.
- the pellet melts and the adhesive by which the pellet was made to adhere to the silicon disappears.
- the sodium fluoride in the recess 23 gradually vaporizes and the vapour acts upon the surface of the silicon body 21 and upon the molten tin aluminum alloy of the pellet 22, any inconvenient oxide film being removed, while the molten material satisfactorily wets the surface of the silicon body.
- the front between the melt and the solid material of the semi-conductor body gradually penetrates into the semi-conductor body, a slight amount of silicon dissolving in the melt. From the front aluminum diffuses into the solid material of the body with the formation of a gradual p-n-junction.
- a rectifying alloy diffusion contact 26 is formed on the n-type silicon body 21 (FIGURE 4).
- the alloy contacts produced on semi-conductor bodies by the method described in the above examples may be used in semi-conductive electrode system.
- an ohmic contact may be provided on the n-type silicon of the body by means of a gold-antimony or gold-tin-antimony alloy to produce a diode.
- alloy contacts may be provided on a semi-conductor body by the method according to the invention.
- the invention is not restricted to making rectifying contacts but it also includes the provision of other alloy contacts, for example ohmic contacts, on semi-conductor bodies.
- a method of making a semi-conductor device by alloying comprising the steps of providing a semi-conductive body and a mass of alloying electrode material, providing in the vicinity of the electrode mass and semiconductive body but separate therefrom a suply of a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 500 C. to melt the mass and contacting the semiconductive body with the melted mass while simultaneously heating the flux supply to vaporize the alkali metal halide and provide vapors thereof at the contacted mass and body to promote melting and fusion and allowing thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.
- a method of making a silicon semi-conductor device by alloying comprising the steps of providing a silicon semiconductive body and an aluminum-containing mass of alloying electrode material, providing in the vicinity of the electrode mass and silicon body but entirely separate therefrom a supply of a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 500 C. to melt the mass and contacting the semiconductive body with the melted mass while simultaneously heating the flux at substantially the same temperature to vaporize the alkali metal halide and provide solely vapors thereof at the contacted mass and body to promote melting and fusion and alloying thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.
- a method of making a silicon semi-conductor device by alloying comprising the steps of providing a silicon semiconductive body and a mass of alloying electrode material, providing in the vicinity of the electrode mass and silicon body but separate therefrom a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 900 C. to melt the mass and contacting the semiconductive body with the melted mass while heating the flux to vaporize the alkali metal halide and provide solely vapors thereof at the contacted mass and body to promote melting and fusion and alloying thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL260812 | 1961-02-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3230609A true US3230609A (en) | 1966-01-25 |
Family
ID=19752857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US169819A Expired - Lifetime US3230609A (en) | 1961-02-03 | 1962-01-30 | Method of providing alloy contacts on semi-conductor bodies |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3230609A (el) |
| DE (1) | DE1154576B (el) |
| GB (1) | GB984141A (el) |
| NL (1) | NL260812A (el) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183126A (en) * | 1976-09-09 | 1980-01-15 | Kabushiki Kaisha Seikosha | Process for preparing quartz oscillator |
| US4298154A (en) * | 1980-01-14 | 1981-11-03 | B. B. Greenberg Company | Automatic soldering machine |
| US7118942B1 (en) | 2000-09-27 | 2006-10-10 | Li Chou H | Method of making atomic integrated circuit device |
| US20070181913A1 (en) * | 1995-06-07 | 2007-08-09 | Li Chou H | Integrated Circuit Device |
| US20100276733A1 (en) * | 2000-09-27 | 2010-11-04 | Li Choa H | Solid-state circuit device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2299166A (en) * | 1940-07-30 | 1942-10-20 | Aluminum Co Of America | Brazing light metals |
| US2561565A (en) * | 1946-06-22 | 1951-07-24 | United Aircraft Corp | Process of fluxing and joining metal parts |
| US2674790A (en) * | 1950-04-15 | 1954-04-13 | United Aircraft Corp | Method of soldering aluminous metal parts by treating with chloride fluxes |
| US2800711A (en) * | 1954-08-18 | 1957-07-30 | Wall Colmonoy Corp | Brazing method |
| US2877147A (en) * | 1953-10-26 | 1959-03-10 | Bell Telephone Labor Inc | Alloyed semiconductor contacts |
| US2996800A (en) * | 1956-11-28 | 1961-08-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductors |
| US3002864A (en) * | 1958-09-05 | 1961-10-03 | Philips Corp | Method of manufacturing semi-conductor devices |
| US3015591A (en) * | 1958-07-18 | 1962-01-02 | Itt | Semi-conductor rectifiers and method of manufacture |
| US3043726A (en) * | 1958-01-14 | 1962-07-10 | Philips Corp | Method of producing semi-conductor electrode systems |
-
0
- NL NL260812D patent/NL260812A/xx unknown
-
1962
- 1962-01-30 DE DEN21137A patent/DE1154576B/de active Pending
- 1962-01-30 US US169819A patent/US3230609A/en not_active Expired - Lifetime
- 1962-01-31 GB GB3664/62A patent/GB984141A/en not_active Expired
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2299166A (en) * | 1940-07-30 | 1942-10-20 | Aluminum Co Of America | Brazing light metals |
| US2561565A (en) * | 1946-06-22 | 1951-07-24 | United Aircraft Corp | Process of fluxing and joining metal parts |
| US2674790A (en) * | 1950-04-15 | 1954-04-13 | United Aircraft Corp | Method of soldering aluminous metal parts by treating with chloride fluxes |
| US2877147A (en) * | 1953-10-26 | 1959-03-10 | Bell Telephone Labor Inc | Alloyed semiconductor contacts |
| US2800711A (en) * | 1954-08-18 | 1957-07-30 | Wall Colmonoy Corp | Brazing method |
| US2996800A (en) * | 1956-11-28 | 1961-08-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductors |
| US3043726A (en) * | 1958-01-14 | 1962-07-10 | Philips Corp | Method of producing semi-conductor electrode systems |
| US3015591A (en) * | 1958-07-18 | 1962-01-02 | Itt | Semi-conductor rectifiers and method of manufacture |
| US3002864A (en) * | 1958-09-05 | 1961-10-03 | Philips Corp | Method of manufacturing semi-conductor devices |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183126A (en) * | 1976-09-09 | 1980-01-15 | Kabushiki Kaisha Seikosha | Process for preparing quartz oscillator |
| US4298154A (en) * | 1980-01-14 | 1981-11-03 | B. B. Greenberg Company | Automatic soldering machine |
| US20070181913A1 (en) * | 1995-06-07 | 2007-08-09 | Li Chou H | Integrated Circuit Device |
| US7118942B1 (en) | 2000-09-27 | 2006-10-10 | Li Chou H | Method of making atomic integrated circuit device |
| US20100276733A1 (en) * | 2000-09-27 | 2010-11-04 | Li Choa H | Solid-state circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB984141A (en) | 1965-02-24 |
| DE1154576B (de) | 1963-09-19 |
| NL260812A (el) |
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