[go: up one dir, main page]

US3137595A - Method of producing boron-gold alloy foil - Google Patents

Method of producing boron-gold alloy foil Download PDF

Info

Publication number
US3137595A
US3137595A US21591A US2159160A US3137595A US 3137595 A US3137595 A US 3137595A US 21591 A US21591 A US 21591A US 2159160 A US2159160 A US 2159160A US 3137595 A US3137595 A US 3137595A
Authority
US
United States
Prior art keywords
boron
gold
foil
powder
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US21591A
Other languages
English (en)
Inventor
Patalong Hubert
Schink Norbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3137595A publication Critical patent/US3137595A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • This invention is based upon our discovery that the boron-containing gold required for such purposes is advantageously produced by first intimately mixing gold powder and boron powder, then compacting the mixture under pressure, thereafter tempering the pressed body at a temperature below the melting temperature of gold, subsequently melting the pressed and sintered body, and thereafter rolling the remelted material down to foil thickness.
  • This discovery was made in the face of prior views that boron cannot be melted together with gold because it tends to become expelled from the melt, as explained below.
  • solid boron be introduced into the liquid gold-silicon alloy. This can be done, for example, by first mechanically rolling amorphous boron in powder form into a gold foil or by spreading the solid boron in fine distribution upon the foil, whereafter the gold foil is placed upon the semiconductor body and the assembly is subsequently heated. Then the gold forms a liquid alloy with a portion of the semiconductor material, in which alloy the boron penetrates down to the alloying front.
  • the boron content of the foil may be 0.001 to 0.3%, being preferably about 0.1%, in respect to the gold, all percentages herein being by Weight.
  • a preferred embodiment of the method is as follows.
  • Gold powder and boron powder are intimately mixed with each other and are then subjected to pressure.
  • the mixture of gold powder and boron powder may contain 0.01 to 0.5% boron.
  • An advantageous embodiment of the invention contained 0.35% boron in the powder mixture.
  • the finished foil then contains about 0.3% b0- ron, because slight quantities of boron precipitate at the external surfaces. It has been found preferable to apply the highest feasible pressure, for example in the order of 10,000 atm.
  • the preferred range of the pressures to be employed is from 10 to 100,000 atmospheres, with a pressure of at least 2000 atmospheres desirable, since higher pressures yield better results.
  • the compressed and thus shaped body is tempered in vacuum or protective atmosphere such as nitrogen gas at about 900 C. for several days, preferably at least 48 hours.
  • the value of 48 hours as minimum period for the processing time is suitable. Very good results were obtained with periods of 50 to hours.
  • the tempering temperature must in any event remain below the melting temperature of gold (1,063 C.).
  • the tempering temperature should be at least 825 C. with a temperature of about 900 C. having been found to be particularly favorable.
  • the boron content is determined of a portion of the pressed body, and the other portion is melted together with a correspondingly dimensioned quantity of Suitgether with the gold.
  • a portion of bismuth may be roasted, i.e., heated with ingress of air, and another portion of bismuth may be sulfurized, i.e., heated in pulverulent form together with sulfur flower to melting.
  • corresponding quantities of these two types of prepared bismuth are added to the tempered pressed material, if desired together with another portion of untreated bismuth.
  • These melting operations are preferably also performed in vacuum or under protective gas.
  • a method of producing boron-containing gold foil for p-doping a body of essentially monocrystalline silicon semiconductor material comprising intimately mixing gold powder and boron powder,'the mixture containing from 0. 01 to 0.5% by'weight of boron powder, compacting the mixture under a pressure between and.
  • the boron-containing gold foil having from 0.001 to 0.01% of sulfur in-' corporated therein.
  • a method of producing boron-containing gold foil for p-doping a body of essentially monocrystalline silia con semiconductor material comprising intimately mixing gold powder and boron powder, the mixture containing from 0.01 to 0.5 by weight of boron powder, compacting the mixture under pressure, tempering and sintering the compacted mixture at a temperature below the melting point of gold for a period of time suificient to form a boron-goldalloy, subsequently melting the sintered, pressed boron-gold alloy, and thereafter forming the material into a foil, the tempering being carried out for at least a day at atemperature of at least about 900 C., the compacting being at a pressure of at least 2,000 atmospheres. a j V 9.
  • a method of producing boron-containing gold foil for p-doping a body" of essentiallymonocrystalline silicon semiconductor material comprising intimately mixing gold powder and boron powder, the mixture containpressure and tempering and sintering the compacted mixture for at least two days at a temperature-of at least 825 C. but below the melting temperature of gold, while under said pressure, subsequently melting the pressed body, and thereafter rolling the re -solidified material down to a foil.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Contacts (AREA)
US21591A 1959-05-12 1960-04-12 Method of producing boron-gold alloy foil Expired - Lifetime US3137595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0062963 1959-05-12

Publications (1)

Publication Number Publication Date
US3137595A true US3137595A (en) 1964-06-16

Family

ID=7496010

Family Applications (1)

Application Number Title Priority Date Filing Date
US21591A Expired - Lifetime US3137595A (en) 1959-05-12 1960-04-12 Method of producing boron-gold alloy foil

Country Status (5)

Country Link
US (1) US3137595A (fr)
BE (2) BE590762A (fr)
CH (1) CH398797A (fr)
FR (1) FR1244844A (fr)
GB (1) GB911235A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211550A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co Gold boron alloy and method of making the same
US3214653A (en) * 1959-11-02 1965-10-26 Hughes Aircraft Co Gold bonded, boron containing semiconductor devices
US3339269A (en) * 1962-03-15 1967-09-05 Gen Motors Corp Method of bonding
US4005454A (en) * 1975-04-05 1977-01-25 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor device having a solderable contacting coating on its opposite surfaces

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686118A (en) * 1952-12-23 1954-08-10 Ontario Research Foundation Method of making metal products directly from ores
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3009840A (en) * 1958-02-04 1961-11-21 Siemens Ag Method of producing a semiconductor device of the junction type
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2701326A (en) * 1949-11-30 1955-02-01 Bell Telephone Labor Inc Semiconductor translating device
US2686118A (en) * 1952-12-23 1954-08-10 Ontario Research Foundation Method of making metal products directly from ores
US2937113A (en) * 1956-05-15 1960-05-17 Siemens Ag Method of producing an electrodecarrying silicon semiconductor device
US2974074A (en) * 1956-05-15 1961-03-07 Siemens Ag Method of producing a silicon semiconductor device
US3009840A (en) * 1958-02-04 1961-11-21 Siemens Ag Method of producing a semiconductor device of the junction type
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211550A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co Gold boron alloy and method of making the same
US3214653A (en) * 1959-11-02 1965-10-26 Hughes Aircraft Co Gold bonded, boron containing semiconductor devices
US3339269A (en) * 1962-03-15 1967-09-05 Gen Motors Corp Method of bonding
US4005454A (en) * 1975-04-05 1977-01-25 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor device having a solderable contacting coating on its opposite surfaces

Also Published As

Publication number Publication date
BE590792A (fr)
FR1244844A (fr) 1960-10-28
CH398797A (de) 1966-03-15
GB911235A (en) 1962-11-21
BE590762A (fr)

Similar Documents

Publication Publication Date Title
US3009840A (en) Method of producing a semiconductor device of the junction type
US3836355A (en) Steel powder containing phosphorus
US3137595A (en) Method of producing boron-gold alloy foil
US4090875A (en) Ductile tungsten-nickel-alloy and method for manufacturing same
US4525429A (en) Porous semiconductor dopant carriers
US3161949A (en) Refractory metal base alloys and method of making same
US3068127A (en) Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
WO1999054941A1 (fr) Procede de fabrication de corps fritte pour element de conversion thermoelectrique, corps fritte pour element de conversion thermoelectrique et element de conversion thermoelectrique utilisant ce corps fritte
US3969112A (en) Process for preparing silver-cadmium oxide alloys
DE2646945C2 (fr)
US2671953A (en) Metal body of high porosity
US3208889A (en) Method for producing a highly doped p-type conductance region in a semiconductor body, particularly of silicon and product thereof
US3010857A (en) Semi-conductor devices and methods of making same
US3141235A (en) Powdered tantalum articles
US3137597A (en) Method for producing a highly doped zone in semiconductor bodies
Kim et al. Thermoelectric properties of p-type (Bi, Sb) 2 Te 3 alloys fabricated by the hot pressing method
US3634143A (en) Preparation of iii{14 v alloys for infrared detectors
EP0156054B1 (fr) Supports poreux en carbure de silicium pour le dopage de semi-conducteurs
US2041493A (en) Pulverulent alloy
US2979399A (en) Preparation of compacts made from uranium and beryllium by sintering
US3063876A (en) Preparation of junctions in silicon carbide members
US3062691A (en) Method of producing electrode material for semi-conducting devices
DE1246136B (de) Verfahren zum Herstellen eines strahlungsempfindlichen Koerpers
GB925182A (en) Silver base semiconductor doping alloys
US3690876A (en) Method for producing sintered cobalt-base alloy containing gold