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US3062690A - Semi-conductor device and method of making the same - Google Patents

Semi-conductor device and method of making the same Download PDF

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US3062690A
US3062690A US526679A US52667955A US3062690A US 3062690 A US3062690 A US 3062690A US 526679 A US526679 A US 526679A US 52667955 A US52667955 A US 52667955A US 3062690 A US3062690 A US 3062690A
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US526679A
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Ross Bernd
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Hoffman Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • Another important object is to provide a semi-conductor device comprising a plate of crystalline semi-conductor material having means formed on a surface portion of the plate to provide a transistor base, said plate having another surface portion coated with a layer of material having characteristics different from the remaining portions of the plate, said other surface being formed with a continuous groove therein and extending from one side of the plate to the other, said groove extending through said layer and into the body of the plate therebeneath to separate the layer on opposite sides of the groove and to constitute the separated portions of the layer, respectively, -as a transistor emitter and a transistor collector.
  • FIG. l is a perspective View showing a semi-conductor device embodying the present invention.
  • FIG. 2 is a setcional View taken substantially along the line 2 2 in FIG. l;
  • FIGS. 3 and 4 are similar sectional views taken through modified devices embodying the invention.
  • FIG. 5 is a perspective view of another modified device embodying the invention.
  • vFIG. 6 is a sectional view taken substantially along the line 6-6 in FIG. 5.
  • the drawings show semiconductor devices 11 forming transistors, each consisting of a body 112 of crystalline semi-conductor material and means formed on and operatively associated with the body 12 to prov-ide a transistor base '13, and connection means 14 and 15, either of which may serve as the emitter element of the transistor while the other is serving as the collector element thereof.
  • the body 12 may comprise any suitable semi-conductor material, such ⁇ as silicon, lcontaining a selected activating substance distributed through the lattice structure of the material rin order to provide desired semi-conductor characteristics.
  • Atomic quantities of the activating substance may lbe distributed throughout the material of the body i12 in proportions of the order of one atom of activating substance for every one hundred million atoms of the intrinsic materiai of the body 12.
  • Arsenic, antimony or other suitable electron donor material may thus lbe employed as an activating substance to constitute the body 12 as an N-type semi-conductor, while boron, indium or other suitable acceptor material may be employed as an activating substance if it be desired to constitute the body 12 as a P-type semi-conductor.
  • the body '12 preferably comprises a relatively thin disc or plate, which may be cut from a crystalline ingot of the selected semi-conductor material containing a desired activating substance. Portions 16 of the plate, at and inwardly of a surface thereof, may be treated with an activating substance other than and diierent from that distributed in the body 12 of the disc in order to alter the type ⁇ of the semi-conductor material at and to a desired depth inwardly of the bounding surface of the treated portions )16. Where the disc comprises N-type semi-conductor material, the portions 16 may be treated with boron, aluminum, indium or other electron acceptor substance in order to constitute the plate portions 16 as P-type semi-conductor material.
  • the portions 16 may be treated with arsenic, antimony or other electron donor substance in order to constitute the plate portions 116 as N-type semi-conductor material.
  • the plate -12 comprises N-type silicon material embodying arsenic or antimony as the activating substance, the surface portions 16 being treated with boron in order to constitute the same as P-type semi-conductor material.
  • the activating substance employed to determine the character of the material in the portions 16 may be applied to the surface of the plate and caused to penetrate to a desired depth in said portions by exposing the plate 12 in an atmosphere consisting of theactivating substance in vaporized condition, the plate 12 being retained in such atmosphere during a period suiicient to obtain penetration of the activating substance to a desired depth at and beneath the surface of the plate. Any suitable, preferred or convenient means may be employed to prevent the application of the activating substance to surfaces other than those at which penetration of the substance is desired. It is, however, preferable to expose the entire plate 12 to the vaporized activating substance so that penetration of the activator is obtained at all exposed surfaces of the plate.
  • the plate may be ground, milled or etched in order to remove all portions yof the plate penetrated by the activating substance except those portions 16 which it is desired to retain. It will be apparent, of course, that a P-N junction will thus be established between the boundary of the activated portions 16 and the remaining portions of the plate 12.
  • the plate 12 After formation of the activated surface portions 16, the plate 12, if it comprises N-type semi-conductor material, may be exposed to the action of vaporized phosphorus 0r other especially active electron donor material in order to constitute the remaining surface portions 17 of the plate 12, other than the portions 16, as N+ type semi-conductor material, to a desired depth in said other surface portions.
  • the constituent material of the plate 12 comprises P-type semi-conductor material
  • the plate should, of course, be treated with an especially active electron acceptor substance in order to form P-ltype material in the plate portions 17.
  • N+ or P-i- (as the case may be) surface portions 17 are more heavily doped than the central portion of plate 12, and that surface portions 17 in being heavily doped serve merely as bonding layers or portions to accommodate the affixing thereto of those layers 18, hereinafter mentioned, which constitute base electrodes.
  • portions of the plate may be removed, as by grinding, milling or etching, as indicated at 19, in order to isolate the activated material comprising portions 17 from the material constituting the portions 16. Exposure of previously treated portions 16 to vapors of the substance employed to activate the portions 17 will not materially alter the character of the portions 16. If desired, the exposed boundary surfaces of the portions 16 may be coated or otherwise masked by a layer of material that is impervious to the activating substance, during exposure of the portions 17 to the activating substance.
  • said surfaces may be provided with coating layers 18 of nickel, which may be applied in any suitable or convenient fashion, as by electrodeposition of the layers or by condensing the layers upon the surfaces to be coated from a vaporized atmosphere of the coating metal.
  • coating layers 18 of nickel may be applied in any suitable or convenient fashion, as by electrodeposition of the layers or by condensing the layers upon the surfaces to be coated from a vaporized atmosphere of the coating metal.
  • a surface portion of the plate 12 may be etched out, as with acid, in order to provide a shallow depression 19 disposed preferably centrally of the plate 12 upon the face thereof containing thel activated portions 17, the bottom of the depression 19 extending beneath the depth of penetration of the activating material to thereby reveal and expose material of the plate 12 which is entirely free of the activating substance in the plate portions 17.
  • a suitable etching medium for such purpose may comprise a mixture of nitric and hydrofluoric acids.
  • connection means 14 of semi-conductor devices embodying the present invention may comprise an alloyed P-N junction in addition to the doped P-N junction formed between the constituent material of the plate portions 16 and the remaining portions of the plate.
  • this alloyed junction comprises a length of aluminum wire 21 having an end penetrating into and alloyed with the material of the plate 12, preferably centrally of the depression 19', such junction being formed by heating the plate 12 and the aluminum wire 21 to a temperature of the order of, but somewhat less than, their melting temperatures, and then pressing the end of the wire upon and into the plate to a selected depth at the place where the junction is desired.
  • wire 21 will comprise donor or N-type material.
  • the foregoing procedure for the fabrication of transistors allows for every precise control of the spacement of collector, base and emitter. Such control may be accomplished by regulating the time intervals during which, and the temperature at which, the plate 12 is exposed to the vaporized activating substances in doping the plate portions 16 and 17, If a device should be unsatisfactory due to improper spacing of emitter and collector, the device may be retreated and the wire 21 embedded more deeply in the plate 12.
  • the ability to thus easily control spacements makes it possible to readily attain, in each transistor, precise characteristics selected from a wider range thereof.
  • FIGURE 3 a transistor device is shown which is similar to that of FIGURES 1 and 2.. However, in the case of FIGURE 3 the base electrode 18 is seen to extend not only on the top surface of plate 12 but also on the edge surface and on a portion of the lower surface thereof.
  • the emitter (or collector) electrode layer 1S which is atiixed to the surface of semiconductor portion 16 is physically separated from electrode layer 18 and semiconductor portion 17 by relief area 19.
  • the device of FIGURE 3 may be fabricated as follows.
  • a disc of semi-conductor material may be doped with activating material at the lower surface thereof to provide activated layer 16. The remaining portions of the disc may be masked during this initial operation. Then the disc may be ground, etched or milled on the lower surface to remove the peripheral portions of the activated zone 16 and leave only the central portion of the disc. The disc may then be doped with activating material of desired character to a desired depth to provide an activated portion 17. During this operation the previously doped portion may or may not be masked, as desired. Finally, the ground, milled, or etched relief areas 19 and 19' may be provided (the latter to separate activated zones or portions 16 and 17) yand the electrode layers 18 and wire 21 affixed in the same manner as that above described.
  • connection means 14 comprises a doped junction similar to the connection means 15.
  • a disc of material may be doped with activating material to desired depth to provide activated zones or layers 16 on each of its opposite sides.
  • the disc may then be ground, etched or milled on both sides to remove the peripheral portions of the activated zones 16 and leave only the portions of said zones which extend at the medial portions of the disc.
  • the disc may then be doped with activating material of desired character, to a desired depth to provide an activated zone or layer 17 in the peripheral portions of the disc.
  • the surfaces of the disc may then be electroplated or otherwise coated with nickel or other electrical conducting material to provide an electrical conducting layer 18 on said surfaces.
  • This layer and the body of the disc, between the zones 16 and 17 may then be cut away as at 19.
  • the disc may be coated with a layer of conducting material after the formation of the activated zones 16 and before the removal of the peripheral portions thereof, to thereby minimize the possibility of contaminating the material of the zones 16 with the substance used subsequently to activate the zone 17.
  • FIGS. 5 and 6 Another form of device embodying the invention is shown in FIGS. 5 and 6, said device comprising a disc of semi-conductor material 12 containing doped layers 16 and 17 of material of unlike electron flow promoting character on the opposite sides of the disc, a conducting layer 18 of nickel or other electrical conducting material being coated, as by electrodeposition or other- Wise, upon the surfaces of the layers 16 and 17 to facilitate electrical contact therewith.
  • the layer 17 and its coating 18 may constitute a transistor base, while the layer 16 may be intersected by a groove 22, extending from one side of the disc to the other, in order to separate the layer 16 and its overlying conductive coating 18 into emitter and collector portions 14 and 15 on opposite sides of the groove.
  • the groove throughout its length, extends entirely through the layer 16 and its surface coating 18, and into the material of the disc 12, inwardly of the layer 16.
  • the groove is preferably of serpentine character, as shown. It may, however, conveniently be formed to extend diametrically straight across the disc; or it may have any other preferred layer separating conliguration.
  • the method of making an electron flow device which comprises forming a disc of crystalline semiconductor material exhibiting an intrinsic electrical characteristic, said disc having first and second opposing surfaces, exposing said disc to a iirst activating substance in vaporized condition to obtain atomic penetration for a desired depth by said substance of the material of said disc, at and inwardly of said first surface thereo, said first activating substance exhibiting an electrical character opposite to the intrinsic electrical characteristic of said disc, exposing said disc to a second activating substance in vaporized condition to obtain atomic penetration for a desired depth by said second substance of the material of said disc, at and inwardly of said second surface thereof, said second activating substance exhibiting an electrical character similar to the intrinsic electrical characteristic of said disc, bonding to each of said first and second surfaces of said disc iirst and second respective layers of loW resistance metallic substance, thereafter removing atomically penetrated portions in the central portion associated with said first surface of said disc, together With the portion of the metallic layer disposed thereover, to leave an integral layer of atomically pene

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Bipolar Transistors (AREA)

Description

B. Ross 3,062,690
SEMI-CONDUCTOR DEVICE AND METHOD OF MAKING THE SAME Nov. 6, 1962 Filed Aug. 5, 1955 l l l 'llllvllllllll 111111,',
'lill/111111111111111 'IIIA iiiiiiiiilir @w ne# ATTORNEYS A INVENTUM- BERND ROSS Y BY:-
3 with a diiferent activa-ting substance to a desired depth, as Iby exposure of said surface portions to the activating substance in vaporized condition during a selected interval, to thereby constitute the doped portions of the plate as semi-conductor material of type other than that constituting the remaining portions of the plate.
Another important object is to provide a semi-conductor device comprising a plate of crystalline semi-conductor material having means formed on a surface portion of the plate to provide a transistor base, said plate having another surface portion coated with a layer of material having characteristics different from the remaining portions of the plate, said other surface being formed with a continuous groove therein and extending from one side of the plate to the other, said groove extending through said layer and into the body of the plate therebeneath to separate the layer on opposite sides of the groove and to constitute the separated portions of the layer, respectively, -as a transistor emitter and a transistor collector.
The foregoing and numerous other important objects, advantages and inherent functions of the invention will become apparent as the same is more fully understood from the following description, which, taken in connection with the accompanying drawings, discloses preferred embodiments of the invention.
Referring to the drawings:
FIG. l is a perspective View showing a semi-conductor device embodying the present invention;
lFIG. 2 is a setcional View taken substantially along the line 2 2 in FIG. l;
FIGS. 3 and 4 are similar sectional views taken through modified devices embodying the invention;
FIG. 5 is a perspective view of another modified device embodying the invention; and
vFIG. 6 is a sectional view taken substantially along the line 6-6 in FIG. 5.
To illustrate the invention, the drawings show semiconductor devices 11 forming transistors, each consisting of a body 112 of crystalline semi-conductor material and means formed on and operatively associated with the body 12 to prov-ide a transistor base '13, and connection means 14 and 15, either of which may serve as the emitter element of the transistor while the other is serving as the collector element thereof.
The body 12 may comprise any suitable semi-conductor material, such `as silicon, lcontaining a selected activating substance distributed through the lattice structure of the material rin order to provide desired semi-conductor characteristics. Atomic quantities of the activating substance may lbe distributed throughout the material of the body i12 in proportions of the order of one atom of activating substance for every one hundred million atoms of the intrinsic materiai of the body 12. Arsenic, antimony or other suitable electron donor material may thus lbe employed as an activating substance to constitute the body 12 as an N-type semi-conductor, while boron, indium or other suitable acceptor material may be employed as an activating substance if it be desired to constitute the body 12 as a P-type semi-conductor.
=The body '12 preferably comprises a relatively thin disc or plate, which may be cut from a crystalline ingot of the selected semi-conductor material containing a desired activating substance. Portions 16 of the plate, at and inwardly of a surface thereof, may be treated with an activating substance other than and diierent from that distributed in the body 12 of the disc in order to alter the type `of the semi-conductor material at and to a desired depth inwardly of the bounding surface of the treated portions )16. Where the disc comprises N-type semi-conductor material, the portions 16 may be treated with boron, aluminum, indium or other electron acceptor substance in order to constitute the plate portions 16 as P-type semi-conductor material. Conversely, where the disc comprises P-type semi-conductor material, the portions 16 may be treated with arsenic, antimony or other electron donor substance in order to constitute the plate portions 116 as N-type semi-conductor material. Preferably, the plate -12 comprises N-type silicon material embodying arsenic or antimony as the activating substance, the surface portions 16 being treated with boron in order to constitute the same as P-type semi-conductor material.
The activating substance employed to determine the character of the material in the portions 16 may be applied to the surface of the plate and caused to penetrate to a desired depth in said portions by exposing the plate 12 in an atmosphere consisting of theactivating substance in vaporized condition, the plate 12 being retained in such atmosphere during a period suiicient to obtain penetration of the activating substance to a desired depth at and beneath the surface of the plate. Any suitable, preferred or convenient means may be employed to prevent the application of the activating substance to surfaces other than those at which penetration of the substance is desired. It is, however, preferable to expose the entire plate 12 to the vaporized activating substance so that penetration of the activator is obtained at all exposed surfaces of the plate. Thereafter the plate may be ground, milled or etched in order to remove all portions yof the plate penetrated by the activating substance except those portions 16 which it is desired to retain. It will be apparent, of course, that a P-N junction will thus be established between the boundary of the activated portions 16 and the remaining portions of the plate 12.
After formation of the activated surface portions 16, the plate 12, if it comprises N-type semi-conductor material, may be exposed to the action of vaporized phosphorus 0r other especially active electron donor material in order to constitute the remaining surface portions 17 of the plate 12, other than the portions 16, as N+ type semi-conductor material, to a desired depth in said other surface portions. Where the constituent material of the plate 12 comprises P-type semi-conductor material, the plate should, of course, be treated with an especially active electron acceptor substance in order to form P-ltype material in the plate portions 17. It will of course be realized that the N+ or P-i- (as the case may be) surface portions 17 are more heavily doped than the central portion of plate 12, and that surface portions 17 in being heavily doped serve merely as bonding layers or portions to accommodate the affixing thereto of those layers 18, hereinafter mentioned, which constitute base electrodes. After the character of the material in the plate portions 17 has been established to desired depth, portions of the plate may be removed, as by grinding, milling or etching, as indicated at 19, in order to isolate the activated material comprising portions 17 from the material constituting the portions 16. Exposure of previously treated portions 16 to vapors of the substance employed to activate the portions 17 will not materially alter the character of the portions 16. If desired, the exposed boundary surfaces of the portions 16 may be coated or otherwise masked by a layer of material that is impervious to the activating substance, during exposure of the portions 17 to the activating substance.
In order to protect and also to provide for electrical connection of the activated plate portions 16 and 17 in external electrical circuits, said surfaces may be provided With coating layers 18 of nickel, which may be applied in any suitable or convenient fashion, as by electrodeposition of the layers or by condensing the layers upon the surfaces to be coated from a vaporized atmosphere of the coating metal. The application of such a layer to the surface of the portions 16, prior to the application of an activating substance to the portions 17, will, of course, preclude any contamination of the portions 16 by the activating substance applied to the portions 17.
In the embodiment illustrated in FIGS. l and 2 of the drawings, a surface portion of the plate 12 may be etched out, as with acid, in order to provide a shallow depression 19 disposed preferably centrally of the plate 12 upon the face thereof containing thel activated portions 17, the bottom of the depression 19 extending beneath the depth of penetration of the activating material to thereby reveal and expose material of the plate 12 which is entirely free of the activating substance in the plate portions 17. A suitable etching medium for such purpose may comprise a mixture of nitric and hydrofluoric acids.
As shown more particularly in FIGS. 1 and 2, the connection means 14 of semi-conductor devices embodying the present invention may comprise an alloyed P-N junction in addition to the doped P-N junction formed between the constituent material of the plate portions 16 and the remaining portions of the plate. Where plate 12 is initially N-type material, this alloyed junction comprises a length of aluminum wire 21 having an end penetrating into and alloyed with the material of the plate 12, preferably centrally of the depression 19', such junction being formed by heating the plate 12 and the aluminum wire 21 to a temperature of the order of, but somewhat less than, their melting temperatures, and then pressing the end of the wire upon and into the plate to a selected depth at the place where the junction is desired. As the end of the aluminum wire becomes alloyed with the material of the plate, it will spread and expand to a limited extent, as shown in FIGS. l and 2, and the alloyed junction will be formed between the plate and wire, said junction comprising recrystallized material of the plate con` taining aluminum dispersed therein. Where plate 12 is initially P-type material, wire 21 will comprise donor or N-type material.
The foregoing procedure for the fabrication of transistors allows for every precise control of the spacement of collector, base and emitter. Such control may be accomplished by regulating the time intervals during which, and the temperature at which, the plate 12 is exposed to the vaporized activating substances in doping the plate portions 16 and 17, If a device should be unsatisfactory due to improper spacing of emitter and collector, the device may be retreated and the wire 21 embedded more deeply in the plate 12. The ability to thus easily control spacements makes it possible to readily attain, in each transistor, precise characteristics selected from a wider range thereof.
In FIGURE 3 a transistor device is shown which is similar to that of FIGURES 1 and 2.. However, in the case of FIGURE 3 the base electrode 18 is seen to extend not only on the top surface of plate 12 but also on the edge surface and on a portion of the lower surface thereof. The emitter (or collector) electrode layer 1S which is atiixed to the surface of semiconductor portion 16 is physically separated from electrode layer 18 and semiconductor portion 17 by relief area 19.
The device of FIGURE 3 may be fabricated as follows. A disc of semi-conductor material may be doped with activating material at the lower surface thereof to provide activated layer 16. The remaining portions of the disc may be masked during this initial operation. Then the disc may be ground, etched or milled on the lower surface to remove the peripheral portions of the activated zone 16 and leave only the central portion of the disc. The disc may then be doped with activating material of desired character to a desired depth to provide an activated portion 17. During this operation the previously doped portion may or may not be masked, as desired. Finally, the ground, milled, or etched relief areas 19 and 19' may be provided (the latter to separate activated zones or portions 16 and 17) yand the electrode layers 18 and wire 21 affixed in the same manner as that above described.
A modified form of device embodying the invention is shown in FIG. 4, wherein the connection means 14 comprises a doped junction similar to the connection means 15. In producing the device shown in FIG. 4, a disc of material may be doped with activating material to desired depth to provide activated zones or layers 16 on each of its opposite sides. The disc may then be ground, etched or milled on both sides to remove the peripheral portions of the activated zones 16 and leave only the portions of said zones which extend at the medial portions of the disc. The disc may then be doped with activating material of desired character, to a desired depth to provide an activated zone or layer 17 in the peripheral portions of the disc.
The surfaces of the disc may then be electroplated or otherwise coated with nickel or other electrical conducting material to provide an electrical conducting layer 18 on said surfaces. This layer and the body of the disc, between the zones 16 and 17 may then be cut away as at 19. If desired, the disc may be coated with a layer of conducting material after the formation of the activated zones 16 and before the removal of the peripheral portions thereof, to thereby minimize the possibility of contaminating the material of the zones 16 with the substance used subsequently to activate the zone 17.
Another form of device embodying the invention is shown in FIGS. 5 and 6, said device comprising a disc of semi-conductor material 12 containing doped layers 16 and 17 of material of unlike electron flow promoting character on the opposite sides of the disc, a conducting layer 18 of nickel or other electrical conducting material being coated, as by electrodeposition or other- Wise, upon the surfaces of the layers 16 and 17 to facilitate electrical contact therewith. In this arrangement the layer 17 and its coating 18 may constitute a transistor base, while the layer 16 may be intersected by a groove 22, extending from one side of the disc to the other, in order to separate the layer 16 and its overlying conductive coating 18 into emitter and collector portions 14 and 15 on opposite sides of the groove. The groove, throughout its length, extends entirely through the layer 16 and its surface coating 18, and into the material of the disc 12, inwardly of the layer 16. The groove is preferably of serpentine character, as shown. It may, however, conveniently be formed to extend diametrically straight across the disc; or it may have any other preferred layer separating conliguration.
It is thought that the invention and its numerous attendant advantages Will be fully understood from the foregoing description, and it is obvious that numerous changes may be made in the form, construction and arrangement of the several parts without departing from the spirit or scope of the invention, or sacricing any of its attendant advantages, the forms herein disclosed being preferred embodiments for the purpose of illustrating the invention.
The invention is claimed as follows:
The method of making an electron flow device which comprises forming a disc of crystalline semiconductor material exhibiting an intrinsic electrical characteristic, said disc having first and second opposing surfaces, exposing said disc to a iirst activating substance in vaporized condition to obtain atomic penetration for a desired depth by said substance of the material of said disc, at and inwardly of said first surface thereo, said first activating substance exhibiting an electrical character opposite to the intrinsic electrical characteristic of said disc, exposing said disc to a second activating substance in vaporized condition to obtain atomic penetration for a desired depth by said second substance of the material of said disc, at and inwardly of said second surface thereof, said second activating substance exhibiting an electrical character similar to the intrinsic electrical characteristic of said disc, bonding to each of said first and second surfaces of said disc iirst and second respective layers of loW resistance metallic substance, thereafter removing atomically penetrated portions in the central portion associated with said first surface of said disc, together With the portion of the metallic layer disposed thereover, to leave an integral layer of atomically pene- @,ceasso trated material encircling said central portion of said disc, and then fusing a conductor of electrical character opposite to the electrical characteristic of said second activating substance to the uncovered portion of said disc.
References Cited in the tile of this patent UNITED STATES PATENTS Pearson Feb. 24, 1953 Dunlap July 7, 1953 10 UNITED STATES `PATENT OFFICE CERTIFICATE 0F CORRECTION Patent Nm 3o6269o November! 6 1962 Bernd Ross It is hereby certified that error appears in the above numbered patt the said Letters Patent should read as ent requiring correction and tha corrected below.
line 3M for "setcional" read M- sectional MU line Column 3y column Signed and sealed this 28th .day of May 1963l (SEAL) m Attest:
' DAVID L. LADD ERNEST W. SWIDER Attesting Officer Commissioner of Patents
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250968A (en) * 1961-08-17 1966-05-10 Philips Corp Semiconductor device, network, and integrated circuit
US3657609A (en) * 1968-10-18 1972-04-18 Siemens Ag Electrical device controlled by at least two tunable capacitance diodes

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US2629800A (en) * 1950-04-15 1953-02-24 Bell Telephone Labor Inc Semiconductor signal translating device
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