US3061463A - Metallic diffusion - Google Patents
Metallic diffusion Download PDFInfo
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- US3061463A US3061463A US801995A US80199559A US3061463A US 3061463 A US3061463 A US 3061463A US 801995 A US801995 A US 801995A US 80199559 A US80199559 A US 80199559A US 3061463 A US3061463 A US 3061463A
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- 238000009792 diffusion process Methods 0.000 title claims description 29
- 238000000576 coating method Methods 0.000 claims description 68
- 239000011248 coating agent Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 61
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 229910052736 halogen Inorganic materials 0.000 claims description 22
- 150000002367 halogens Chemical class 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 150000004820 halides Chemical class 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000000376 reactant Substances 0.000 claims description 10
- 230000002452 interceptive effect Effects 0.000 claims description 9
- 239000006227 byproduct Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 239000000047 product Substances 0.000 claims description 4
- 230000002035 prolonged effect Effects 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910052804 chromium Inorganic materials 0.000 description 19
- 239000011651 chromium Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 239000000203 mixture Substances 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052726 zirconium Inorganic materials 0.000 description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000006722 reduction reaction Methods 0.000 description 7
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052790 beryllium Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 238000007792 addition Methods 0.000 description 4
- 238000005254 chromizing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- -1 chromium halide Chemical class 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical group 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- CGWDABYOHPEOAD-VIFPVBQESA-N (2r)-2-[(4-fluorophenoxy)methyl]oxirane Chemical compound C1=CC(F)=CC=C1OC[C@@H]1OC1 CGWDABYOHPEOAD-VIFPVBQESA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- IDLFZVILOHSSID-OVLDLUHVSA-N corticotropin Chemical compound C([C@@H](C(=O)N[C@@H](CO)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CC=1C=CC(O)=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(N)=O)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(O)=O)NC(=O)[C@@H](N)CO)C1=CC=C(O)C=C1 IDLFZVILOHSSID-OVLDLUHVSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000009700 powder processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/938—Vapor deposition or gas diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/941—Solid state alloying, e.g. diffusion, to disappearance of an original layer
Definitions
- a diffusion coating results from one or both of two distinct and often simultaneous factors: first the surface reaction relating to the deposition of the difi'using metal (solute) and, secondly, the gradual diffusion of the deposited metal into the parent metal, the nature and extent of which depends upon the respective characteristics of the two metals in question.
- reaction (a) will occur (interchange); alternatively, in the case of a hydrogen halide the possibility is that reaction (b) will occur (hydrogen reduction).
- the method can be applied generally to most systems of metallic diffusion from halides and, although considerable information can be derived from consideration of theoretical data, it is not possible to formulate a general principle to cover the numerous combinations of pairs of metals. The reason for this is that the important influence of respective vapour pressures of the halides must be considered at the same time as other fundamental thermodynamic data. It follows, therefore, that considerable part of the investigational work must, of necessity, rest on empirical selection of the precise conditions of treatment.
- a process for promoting a more efficient rate of deposition, with or without diffusion, of one element on a metal which process is characterised in that there is used in the required proportion either two or more volatile halides or a third element, which is preferably a metal or metalloid, in combination with one or more volatile halides which will, in certain concentrations, increase the rate of the surface reactions, said reactions being of interchange, reduction or thermal dissociation and being either simultaneous, i.e. combined in one process, or effected in successive steps.
- Example 1 To a mixture comprising 70 parts by weight of alumina and 30 parts by weight of chromium metal powder, there is added 0.2% by weight of ammonium fluoride, said fluoride acting as a carrier compound. Iron or steel articles are packed in contact with this powder mixture and heated to a temperature of between about 800 and 1200 C. under conditions which will ensure freedom from oxidation. Heating at 1020 C.
- a compound comprising 70 parts by weight of powdered alumina and parts by weight of powdered chromium metal to which is added 0.2% by weight of ammonium fluoride and 0.01% by weight of ammonium chloride will give a satisfactory performance for long periods of time.
- Example 2 Silicon is an example of a suitable third element which may be added, according to the invention, to the reacting system in order to bring about the above described improvements. Silicon can, for example, be used in concentrations of from 0.5 to 2% when used in an elemental form but even higher amounts may be used if the silicon is combined with a metal, such as iron.
- a compound comprising 70 parts by weight of alumina powder and 30 parts by weight of chromium metal powder together with 0.2% by weight ammonium fluoride and 1% by weight silicon powder, gives a performance equal or superior to that obtained by the composition described in Example 1. The reason for this improved performance is readily deducible from the thermodynamic data mentioned above.
- the effect of the silicon is, therefore, twofold: first it reacts with both the chromium and the steel surface and, secondly, prevents the formation of stable fluoride films.
- chromium diffusion proceeds at an increased rate whilst a very small percentage of silicon from reaction (a) remains in the coating.
- the presence of a small percentage of silicon in the chromised coating does not adversely afiect the general properties of the coating and substantially improves the resistance of such coatings to oxidation at elevated temperatures.
- Example 3 The importance of experimental adjustment of the conditions to suit the metal being coated is exemplified by the application of the powder described in Example 2 to the treatment of nickel. A deep chromium-rich layer is obtained under the conditions described but the surface of the treated nickel object is taken up in sufficient quantity to form, with the chromium and nickel, a phase that melts at the processing temperature.
- the amount of silicon in the powder mixture is reduced to 0.1%, the surface of the nickel is not roughened and the chromium-rich layer is noticeably deeper than that obtained in the absence of silicon.
- Example 4 The siliconising of mild steel and other metals may be brought about by a number of methods, where a silicon tetrahalide reacts with the metal surface. Usually, the silicon-rich layer is porous, and the surface rough. We have found that the activity of the silicon tetrahalide can be conveniently controlled, when a powder processing mixture is used, by adding a proportion of another metal which can be diffused into the base metal.
- mild steel parts were packed in a powder mixture consisting of 4 parts by weight silicon powder, 5 parts of chromium powder, 91 parts of alumina and 0.5 part of ammonium fluoride.
- the mixture was heated in a sealed box at 1100 C. for 6 hours.
- the steel was smooth after treatment; there was produced a silicon-containing surface layer, 0.008" deep.
- the coating was substantially free from pores and contained a small amount of chromium.
- Example 5 Parts Chromium powder 25 Beryllium powder 2 Zirconium oxide 73 Iodine 0.1
- molybdenum can be chromium diffused by heating the metal at an elevated temperature in the presence of a chromium halide and hydrogen, the reaction which takes place being one of reduction or chemical dissociation.
- Molybdenum can also be silicon-diffused by heating in the presence of a silicon tetrahalide and hydrogen, the reaction being illustrated by the equation:
- the preferred method of siliconising molybdenum or other metals where silicon can only be deposited by a reduction reaction or by thermal dissociation consists, therefore, in first chromising the molybdenum surface by any suitable method, for example, by heating to a temperature to 1200 C. for 6 hours in the presence of a compound comprising 50 parts by weight of chromium metal powder, 50 parts by weight of alumina powder and 0.1% by weight of an ammonium halide, and then siliconising the chromised molybdenum by any suitable method, for example, by heating at a temperature of 1200 C. for 4 hours in the presence of silicon tetrachloride and hydrogen.
- siliconising of chromium can proceed by means of an interchange reaction, it is possible to reduce the concentration of hydrogen at the second stage to a minimum and it is, therefore, also possible to control the silicon uptake and, consequently, the composition of the resulting coating to within relatively close limits.
- solvent metals and solute metals specifically exemplified.
- solvent metals are iron, nickel, cobalt, molybdenum, tungsten, titanium, copper, niobium, tantalum, platinum and alloys thereof and examples of solute or diffusing metals are chromium, aluminium, manganese, nickel, cobalt, copper, zinc, cadmium, niobium, tantalum, vanadium, titanium, zirconium, beryllium, thorium and their alloys.
- elements such as silicon and boron may also be used.
- halogen carrier is a fluoride reacting with both said coating metal and said metal article during said heating step for forming undesired fluoride films thereon, and in which said silicon is reacted with said fluoride carrier and said metal article for inhibiting said formation of said undesired fluoride films.
- a process as recited in claim 8 in which said metal article to be coated comprises nickel and said coating metal is chromium, and in which the concentration of said additional silicon reactant in said pack is no more than about 0.1% for inhibiting said formation of fluoride films and also for avoiding the formation of low melting mixtures in the coated surface of said nickel article.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
Description
United States Patent 3,061,463 METALLIC DIFFUSION Robert Lionel Samuel, Acton, London, England, assignor to Chi'ornalloy Corporation, White Plains, N.Y., a corporation of New York No Drawing. Filed Mar. 26, 1959, Ser. No. 801,995 Claims. (Cl. 111-197) The present invention is concerned with improvements in or relating to metallic diffusion, and, more particularly, with the deposition of a metallic layer by means of diffusion or partial diffusion of one metal into another metal.
Most metallic diffusion processes from the gaseous phase depend upon the reaction at elevated temperatures of a halide of one metal on the surface of another metal, well-known examples of such processes being siliconising and chromising.
The formation of a diffusion coating results from one or both of two distinct and often simultaneous factors: first the surface reaction relating to the deposition of the difi'using metal (solute) and, secondly, the gradual diffusion of the deposited metal into the parent metal, the nature and extent of which depends upon the respective characteristics of the two metals in question.
Considering the general case of a solute metal A and a solvent metal B, if X is halogen atom, three types of general reactions are normally possible:
(a) Interchange reaction of the type:
B AX =BX A (deposited) (b) Reduction react-ion of the type:
AX +%H =mHX+ A (deposited) (0) Thermal dissociation of the type:
AX gX +A (deposited) In the above equations it has been assumed that the metals A and B have the same valency m. The possibility of the occurrence of these reactions can, to -a large extent, be determined by considering the free energy of formation of the respective halides. The close approximation of the possibility of the occurrence of reactions a, b or c is given by considering the curves relating to log of the equilibriums constant for M+X 2MX as a function of temperature, M being a metallic atom.
For any given temperature, the difference of --'1 to 2. units represents a conversion of halide to coating metal varying from approximately 10% to 1% of the vapour of the coating halide. It can, therefore, be stated that operable limits will exist between 0 and 2 units in the appropriate curve.
If the standard is taken in relation to the solvent metal halide, then the possibility is that reaction (a) will occur (interchange); alternatively, in the case of a hydrogen halide the possibility is that reaction (b) will occur (hydrogen reduction).
If any given system of metals, such as chromium diffusion of steel, be considered, the relevant information will be obtained by comparing the curves representing the log o-f Cr+X CrX with Fe+X FeX and H +X 2HX, the last equation assuming that hydrogen is present during the processing operation.
Comparison of these curves will show that appreciable differences in behaviour will be found, according to the halogen used as carrier and depending on the amount of hydrogen present during the processing operation. It will, therefore, be possible to arrive at a preliminary selection of suitable halogen and hydrogen concentration according to the results required at any given temperature. This selection can, however, only operate within comparatively narrow limits but, following the general principle set out above, it will, of course, be possible profoundly to influence the nature of the reaction by introducing small concentrations of other metallic or non-metallic elements, the purpose of which is to shift the reaction in the desired direction.
The method can be applied generally to most systems of metallic diffusion from halides and, although considerable information can be derived from consideration of theoretical data, it is not possible to formulate a general principle to cover the numerous combinations of pairs of metals. The reason for this is that the important influence of respective vapour pressures of the halides must be considered at the same time as other fundamental thermodynamic data. It follows, therefore, that considerable part of the investigational work must, of necessity, rest on empirical selection of the precise conditions of treatment.
According to the invention there is provided a process for promoting a more efficient rate of deposition, with or without diffusion, of one element on a metal, which process is characterised in that there is used in the required proportion either two or more volatile halides or a third element, which is preferably a metal or metalloid, in combination with one or more volatile halides which will, in certain concentrations, increase the rate of the surface reactions, said reactions being of interchange, reduction or thermal dissociation and being either simultaneous, i.e. combined in one process, or effected in successive steps.
The following indicates a flow sheet diagram of steps embodying and for practicing this invention:
Metal article embedded in coating pack with additional reactant therein Heating article in pack in closed retort Coating metal diffused into article while additional reactant inhibits interfering reactions It will be understood that the process is carried out in a chamber and that this chamber may contain a filler gas which may be inert, such as argon or helium, or which may react with one or all of the metals present by reduc tion or nitriding, such as hydrogen, nitrogen or a combination thereof.
The effect achieved by the addition of one or more halogens appears to be due to the fact that the presence of small quantities of volatile halides inhibit the formation of stable halides which, in the course of time, would tend to form a film on the surface of the chromium particles and the surfaces to be coated. As a consequence, these minor additions of volatile halides promote an efficient surface reaction.
The following examples are given for the purpose of illustrating the invention:
Example 1 To a mixture comprising 70 parts by weight of alumina and 30 parts by weight of chromium metal powder, there is added 0.2% by weight of ammonium fluoride, said fluoride acting as a carrier compound. Iron or steel articles are packed in contact with this powder mixture and heated to a temperature of between about 800 and 1200 C. under conditions which will ensure freedom from oxidation. Heating at 1020 C. for 4 hours under these conditions will result in the formation of a chromiumrich coating on a low carbon steel specimen of approximately 0.003 thickness, the chromium content being of the order of about Repeated use of the powder mixture shows that after a few operations, care being taken to renew the carrier compound and to adjust the chromium concentration after each use, the results deteriorate until, after about 8 to 10 consecutive runs, the compound no longer gives results comparable to its earlier performance.
According to the present invention, however, the addition of small concentrations of chemically combined chloride, such as ammonium chloride or any suitable volatile chloride, ensure a satisfactory performance of a powder mixture of the above combination even after prolonged use. Thus, a compound comprising 70 parts by weight of powdered alumina and parts by weight of powdered chromium metal to which is added 0.2% by weight of ammonium fluoride and 0.01% by weight of ammonium chloride will give a satisfactory performance for long periods of time.
Example 2 Silicon is an example of a suitable third element which may be added, according to the invention, to the reacting system in order to bring about the above described improvements. Silicon can, for example, be used in concentrations of from 0.5 to 2% when used in an elemental form but even higher amounts may be used if the silicon is combined with a metal, such as iron.
A compound comprising 70 parts by weight of alumina powder and 30 parts by weight of chromium metal powder together with 0.2% by weight ammonium fluoride and 1% by weight silicon powder, gives a performance equal or superior to that obtained by the composition described in Example 1. The reason for this improved performance is readily deducible from the thermodynamic data mentioned above.
Initially, while the reaction temperature is still comparatively low, silicon tetrafluoride is formed and reacts with the steel surface to be treaed according to the equation:
(a) SiF +2Fe 2FeF +Si (depositing) As the temperature increases, the following reaction also takes place:
([2) SiF.,+2Cr- 2CrF +Si (depositing) In addition, the normal chromising reactions also take place:
The effect of the silicon is, therefore, twofold: first it reacts with both the chromium and the steel surface and, secondly, prevents the formation of stable fluoride films. As a result, chromium diffusion proceeds at an increased rate whilst a very small percentage of silicon from reaction (a) remains in the coating. The presence of a small percentage of silicon in the chromised coating does not adversely afiect the general properties of the coating and substantially improves the resistance of such coatings to oxidation at elevated temperatures.
The further addition of small amounts of chlorides,
bromides or iodides to the silicon compound results in still further improvements in performance.
Example 3 The importance of experimental adjustment of the conditions to suit the metal being coated is exemplified by the application of the powder described in Example 2 to the treatment of nickel. A deep chromium-rich layer is obtained under the conditions described but the surface of the treated nickel object is taken up in sufficient quantity to form, with the chromium and nickel, a phase that melts at the processing temperature.
If the amount of silicon in the powder mixture is reduced to 0.1%, the surface of the nickel is not roughened and the chromium-rich layer is noticeably deeper than that obtained in the absence of silicon.
Example 4 The siliconising of mild steel and other metals may be brought about by a number of methods, where a silicon tetrahalide reacts with the metal surface. Usually, the silicon-rich layer is porous, and the surface rough. We have found that the activity of the silicon tetrahalide can be conveniently controlled, when a powder processing mixture is used, by adding a proportion of another metal which can be diffused into the base metal.
For example, mild steel parts were packed in a powder mixture consisting of 4 parts by weight silicon powder, 5 parts of chromium powder, 91 parts of alumina and 0.5 part of ammonium fluoride. The mixture was heated in a sealed box at 1100 C. for 6 hours. The steel was smooth after treatment; there was produced a silicon-containing surface layer, 0.008" deep. The coating was substantially free from pores and contained a small amount of chromium.
Example 5 Parts Chromium powder 25 Beryllium powder 2 Zirconium oxide 73 Iodine 0.1
Zirconium packed in this mixture and heated at 1050 C. for several hours became coated with an adherent layer containing an average of 15% chromium. Beryllium was not detected.
In the absence of beryllium, there was a considerable loss of zirconium due to the formation of volatile zirconium iodide, the surface was deeply pitted and the coating became detached from the zirconium surface on coolmg.
The above remarks have shown the use of the hereinbefore defined general principle for a single processing operation. However, these principles can also be used in conjunction with successive diffusion treatments. Thus, molybdenum can be chromium diffused by heating the metal at an elevated temperature in the presence of a chromium halide and hydrogen, the reaction which takes place being one of reduction or chemical dissociation. Molybdenum can also be silicon-diffused by heating in the presence of a silicon tetrahalide and hydrogen, the reaction being illustrated by the equation:
Thus, in both cases, chromising and siliconising take place by deposition only, without the removal of atoms of the solvent metal, ie without an interchange type of reaction taking place.
Interchange and reduction reactions are not always effective since they rely largely on the distribution of reacting gases and on the physical conditions prevailing at the surface of the solvent meta-l. It has been found that more satisfactory results can be achieved if an interchange type of reaction can be incorporated into the process in sequence. Thus, a depositing reaction of the type:
is possible. Thus, the preferred method of siliconising molybdenum or other metals where silicon can only be deposited by a reduction reaction or by thermal dissociation consists, therefore, in first chromising the molybdenum surface by any suitable method, for example, by heating to a temperature to 1200 C. for 6 hours in the presence of a compound comprising 50 parts by weight of chromium metal powder, 50 parts by weight of alumina powder and 0.1% by weight of an ammonium halide, and then siliconising the chromised molybdenum by any suitable method, for example, by heating at a temperature of 1200 C. for 4 hours in the presence of silicon tetrachloride and hydrogen.
Since siliconising of chromium can proceed by means of an interchange reaction, it is possible to reduce the concentration of hydrogen at the second stage to a minimum and it is, therefore, also possible to control the silicon uptake and, consequently, the composition of the resulting coating to within relatively close limits.
The above given example merely illustrate particular applications of the invention but the general principles are not limited to the solvent metals and solute metals specifically exemplified. Thus, other suitable solvent metals, are iron, nickel, cobalt, molybdenum, tungsten, titanium, copper, niobium, tantalum, platinum and alloys thereof and examples of solute or diffusing metals are chromium, aluminium, manganese, nickel, cobalt, copper, zinc, cadmium, niobium, tantalum, vanadium, titanium, zirconium, beryllium, thorium and their alloys. Furthermore, elements such as silicon and boron may also be used.
I claim:
1. In a process for diffusion coating of a coating metal into the surface of a metal article embedded in a coating pack containing a powdered source of said coating metal and a powdered refractory oxide filler material and a volatile halogen carrier for reaction with said coating metal and said metal article during said diffusion coating thereof, the steps which comprise heating said article embedded in said powdered coating pack in a closed retort for reaction of said halogen carrier and said coating metal and said metal article forming both desired diffusion coating products and undesired by-products interfering with said diffusion coating and tending to diminish the coating activity and utility of said powdered coating pack materials after prolonged use and reuse thereof, maintaining in said coating pack during said heating step a halide of a halogen different from that of said halogen carrier as an additional reactant in said pack for inhibiting said formation of said interferng byproducts, said additional halide reactant being present in said pack in an amount less than said volatile halogen carrier.
2. A process as recited in claim 1 in which said volatile halogen carrier is a fluoride and in which said additional halide reactant is a volatile choride.
3. A process as recited in claim 1 in which said volatile halogen carrier is an ammonium fluoride and said coating metal is chromium, and in which said additional halide reactant is ammonium chloride.
4. In a process for diffusion coating of a coating metal into the surface of a zirconium metal article embedded in a coating pack containing a powdered source of said coating metal and powdered refractory zirconium oxide and a volatile halogen carrier for reaction with 5 said coating metal and said zirconium article during said diffusion coating thereof, the steps which comprise heating said zirconium article embedded in said powdered coating pack in a closed retort for reaction of said halogen carrier with said coating metal and said zirconium article forming both desired diffusion coating products and undesired by-products and reactions interfering with said diffusion coating, maintaining in said coating pack during said heating step beryllium as an additional reactant for reaction with gaseous components in said retort and inhibiting said interfering reactions and formation of said by-products, said beryllium being present in said coating pack in a concentration less than that producing reaction thereof with said zirconium oxide refractory.
5. A process as recited in claim 4 in which said concentration of beryllium in said coating pack is less than about 2% by weight thereof.
6. A process as recited in claim 4 in which chromium is said coating metal for diffusion into said zirconium article.
7. In a process for diffusion coating of a coating metal into the surface of a metal article embedded in a coating pack containing a powdered source of said coating metal and a powdered refractory oxide filler material and a volatile halogen carrier for reaction with said coating metal and said metal article during said diffusion coating thereof, the steps which comprise heating said article embedded in said powdered coating pack in a closed retort for reaction of said halogen carrier and said coating metal and said metal article forming both desired diffusion coating products and undesired by-products interfering with said difiusion coating and including interfering halide reaction products of said halogen carrier and said metal article, maintaining in said coating pack during said heating step elemental silicon as an additional reactant for reaction with said halogen carrier to inhibit formation of said interfering halide by-products, said silicon being present in an amount not exceeding a maximum concentration of about 1% by weight of said pack.
8. A process as recited in claim 7 in which said halogen carrier is a fluoride reacting with both said coating metal and said metal article during said heating step for forming undesired fluoride films thereon, and in which said silicon is reacted with said fluoride carrier and said metal article for inhibiting said formation of said undesired fluoride films.
9. A process as recited in claim 8 in which said metal article to be coated comprises nickel and said coating metal is chromium, and in which the concentration of said additional silicon reactant in said pack is no more than about 0.1% for inhibiting said formation of fluoride films and also for avoiding the formation of low melting mixtures in the coated surface of said nickel article.
10. A process as recited in claim 7 in which said coating metal is chromium.
References Cited in the file of this patent UNITED STATES PATENTS
Claims (1)
1. IN A PROCESS FOR DIFFUSION COATING OF A COATING METAL INTO THE SURFACE OF A METAL ARTICLE EMBEDDED IN A COATING PACK CONTAINING A POWDERED SOURCE OF SAID COATING METAL AND A POWDERED REFRACTORY OXIDE FILLER MATERIAL AND A VOLATILE HALOGEN CARRIER FOR REACTION WITH SAID COATING METAL AND SAID METAL ARTICLE DURING SAID DIFFUSION COATING THEREOF, THE STEPS WHICH COMPRISE HEATING SAID ARTICLE EMBEDDED IN SAID POWDERED COATING PACK IN A CLOSED RETORT FOR REACTION OF SAID HALOGEN CARRIER AND SAID COATING METAL AND SAID METAL ARTICLE FORMING BOTH DESIRED DIFFUSION COATING PRODUCTS AND UNDESIRED BY-PRODUCTS INTERFERING WITH SAID DIFFUSION COATING AND TENDING TO DIMINISH THE COATING ACTIVITY AND UTILITY OF SAID POWDERED COATING PACK MATERIALS AFTER PROLONGED USE AND REUSE THEREOF, MAINTAINING IN SAID COATING PACK DURING SAID HEATING STEP A HALIDE OF A HALOGEN DIFFERENT FROM THAT OF SAID HALOGEN CARRIER AS AN ADDITIONAL RECTANT IN SAID PACK FOR INHIBITING SAID FORMATION OF SAID INTERFERING BYPRODUCTS, SAID ADDITIONAL HALIDE REACTANT BEING PRESENT IN SAID PACK IN AN AMOUNT LESS THAN SAID VOLATILE HALOGEN CARRIER.
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US801995A US3061463A (en) | 1959-03-26 | 1959-03-26 | Metallic diffusion |
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US801995A US3061463A (en) | 1959-03-26 | 1959-03-26 | Metallic diffusion |
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Cited By (15)
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US3415672A (en) * | 1964-11-12 | 1968-12-10 | Gen Electric | Method of co-depositing titanium and aluminum on surfaces of nickel, iron and cobalt |
US3516805A (en) * | 1966-01-31 | 1970-06-23 | Nakao Netsukagaku Kenkyusho Kk | Electrodes for electric resistance welding and method of manufacture thereof |
US3622374A (en) * | 1969-01-14 | 1971-11-23 | Ritter Praulder Corp | Diffusion coating of ferrous articles |
US3775151A (en) * | 1970-05-06 | 1973-11-27 | Nat Steel Corp | Process for preparing chromized ferrous metal sheet material and the resultant articles |
US3779719A (en) * | 1970-12-03 | 1973-12-18 | Chromalloy American Corp | Diffusion coating of jet engine components and like structures |
US3857725A (en) * | 1972-04-08 | 1974-12-31 | Toyoda Chuo Kenkyusho Kk | Method for forming an iron-manganese carbide layer on the surface of an iron base alloy article containing carbon |
JPS5129100B1 (en) * | 1971-04-24 | 1976-08-23 | ||
US4142023A (en) * | 1975-12-16 | 1979-02-27 | United Technologies Corporation | Method for forming a single-phase nickel aluminide coating on a nickel-base superalloy substrate |
US4369233A (en) * | 1978-07-21 | 1983-01-18 | Elbar B.V., Industrieterrien "Spikweien" | Process to apply a protecting silicon containing coating on specimen produced from superalloys and product |
US4485148A (en) * | 1983-07-08 | 1984-11-27 | United Technologies Corporation | Chromium boron surfaced nickel-iron base alloys |
US4540607A (en) * | 1983-08-08 | 1985-09-10 | Gould, Inc. | Selective LPCVD tungsten deposition by the silicon reduction method |
US4664942A (en) * | 1986-02-05 | 1987-05-12 | General Electric Company | Nickel diffusion bonded to metallized ceramic body and method |
US5364659A (en) * | 1992-02-21 | 1994-11-15 | Ohio State University Research Foundation | Codeposition of chromium and silicon diffusion coatings in FE-base alloys using pack cementation |
US20160108512A1 (en) * | 2014-05-07 | 2016-04-21 | Endurance Technologies Inc. | Method of depositing tantalum to form a tantalum coating |
WO2020030880A1 (en) * | 2018-08-07 | 2020-02-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Coating for refractory alloy part |
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US2811466A (en) * | 1953-03-18 | 1957-10-29 | Metal Diffusions Inc | Process of chromizing |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3415672A (en) * | 1964-11-12 | 1968-12-10 | Gen Electric | Method of co-depositing titanium and aluminum on surfaces of nickel, iron and cobalt |
US3516805A (en) * | 1966-01-31 | 1970-06-23 | Nakao Netsukagaku Kenkyusho Kk | Electrodes for electric resistance welding and method of manufacture thereof |
US3622374A (en) * | 1969-01-14 | 1971-11-23 | Ritter Praulder Corp | Diffusion coating of ferrous articles |
US3775151A (en) * | 1970-05-06 | 1973-11-27 | Nat Steel Corp | Process for preparing chromized ferrous metal sheet material and the resultant articles |
US3779719A (en) * | 1970-12-03 | 1973-12-18 | Chromalloy American Corp | Diffusion coating of jet engine components and like structures |
JPS5129100B1 (en) * | 1971-04-24 | 1976-08-23 | ||
US3857725A (en) * | 1972-04-08 | 1974-12-31 | Toyoda Chuo Kenkyusho Kk | Method for forming an iron-manganese carbide layer on the surface of an iron base alloy article containing carbon |
US4142023A (en) * | 1975-12-16 | 1979-02-27 | United Technologies Corporation | Method for forming a single-phase nickel aluminide coating on a nickel-base superalloy substrate |
US4369233A (en) * | 1978-07-21 | 1983-01-18 | Elbar B.V., Industrieterrien "Spikweien" | Process to apply a protecting silicon containing coating on specimen produced from superalloys and product |
US4485148A (en) * | 1983-07-08 | 1984-11-27 | United Technologies Corporation | Chromium boron surfaced nickel-iron base alloys |
US4540607A (en) * | 1983-08-08 | 1985-09-10 | Gould, Inc. | Selective LPCVD tungsten deposition by the silicon reduction method |
US4664942A (en) * | 1986-02-05 | 1987-05-12 | General Electric Company | Nickel diffusion bonded to metallized ceramic body and method |
US5364659A (en) * | 1992-02-21 | 1994-11-15 | Ohio State University Research Foundation | Codeposition of chromium and silicon diffusion coatings in FE-base alloys using pack cementation |
US20160108512A1 (en) * | 2014-05-07 | 2016-04-21 | Endurance Technologies Inc. | Method of depositing tantalum to form a tantalum coating |
WO2020030880A1 (en) * | 2018-08-07 | 2020-02-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Coating for refractory alloy part |
FR3084891A1 (en) * | 2018-08-07 | 2020-02-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | COATING FOR REFRACTORY ALLOY PIECE |
US11542586B2 (en) | 2018-08-07 | 2023-01-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Coating for refractory alloy part |
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