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US3031270A - Method of producing silicon single crystals - Google Patents

Method of producing silicon single crystals Download PDF

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Publication number
US3031270A
US3031270A US26798A US2679860A US3031270A US 3031270 A US3031270 A US 3031270A US 26798 A US26798 A US 26798A US 2679860 A US2679860 A US 2679860A US 3031270 A US3031270 A US 3031270A
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United States
Prior art keywords
silicon
single crystals
silicon single
heating
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US26798A
Inventor
Rummel Theodor
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Siemens and Halske AG
Siemens Corp
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Siemens Corp
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Priority to US26798A priority Critical patent/US3031270A/en
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Publication of US3031270A publication Critical patent/US3031270A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/134—Remelt

Definitions

  • This invention is concerned with a method of producing silicon single crystals.
  • the production of such single crystals causes considerable and well recognized difficulties.
  • silicon single crystals are obtained by providing upon a single crystal silicon seed body layers of atomic silicon and heating each layer at least once up to the melting thereof.
  • the silicon seed crystal body may be disc-shaped or pin-shaped.
  • the atomic silicon may be provided upon the seed body by vaporization. It may also be provided by thermal decomposition from gaseous silicon compounds upon the heated seed body. Compounds of SiHCl and SiH are particularly suitable for such a procedure.
  • the atomic silicon can also be produced from gaseous silicon compounds by reaction, using, for example, SiCL; mixed with hydrogen.
  • each layer up to melting thereof can be repeated; single crystal layers of desired thickness can be obtained in this manner.
  • the heating of the layers up to the melting is according to the invention eflected by the application of high frequency fields.
  • the heating can also be effected by cathode drop pulses.
  • the silicon body is thereby connected, for example, as anode.
  • Intermediate or high frequency discharge pulses are also usable.
  • purest silicon it is not necessary that purest silicon be always deposited; it may be silicon intermixed with threeor fivevalence elements which upon precipitation produce por n-conductive layers.
  • the addition of atomic boron effect a p-doping while n-doping occurs by the addition of arsenic.
  • the accompanying figure shows a pin-shaped single crystal 1 upon whch are in accordance with the invention deposited a. number of layers 2,
  • the method of producing single crystal silicon bodies comprising providing upon a single crystal silicon seed body layers of atomic silicon, and heating each layer at least once up to the melting thereof.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

A ril 24, 1962 T. IQQUMMEL METHOD OF PRODUCING SILICON SINGLE CRYSTALS Filed May 4, 1960 United States Patent Ofitice 3,0312% Patented Apr. 24, 1962 3,031,270 METHOD OF PRODUCING SILICON SINGLE CRYSTALS Theodor Rummel, Munich, Germany, assignor to Siemens & Halske Alrtiengesellschatt Berlin and Munich,
a corporation of Germany Filed May 4, 1960, Ser. No. 26,798 11 Claims. (Cl. 23223.5)
This invention is concerned with a method of producing silicon single crystals. The production of such single crystals causes considerable and well recognized difficulties.
In accordance with the invention, silicon single crystals are obtained by providing upon a single crystal silicon seed body layers of atomic silicon and heating each layer at least once up to the melting thereof.
The silicon seed crystal body may be disc-shaped or pin-shaped.
The atomic silicon may be provided upon the seed body by vaporization. It may also be provided by thermal decomposition from gaseous silicon compounds upon the heated seed body. Compounds of SiHCl and SiH are particularly suitable for such a procedure.
The atomic silicon can also be produced from gaseous silicon compounds by reaction, using, for example, SiCL; mixed with hydrogen.
The heating of each layer up to melting thereof can be repeated; single crystal layers of desired thickness can be obtained in this manner.
The heating of the layers up to the melting is according to the invention eflected by the application of high frequency fields.
The heating can also be effected by cathode drop pulses. The silicon body is thereby connected, for example, as anode. Intermediate or high frequency discharge pulses are also usable.
It is not necessary that purest silicon be always deposited; it may be silicon intermixed with threeor fivevalence elements which upon precipitation produce por n-conductive layers. The addition of atomic boron effect a p-doping while n-doping occurs by the addition of arsenic.
The accompanying figure shows a pin-shaped single crystal 1 upon whch are in accordance with the invention deposited a. number of layers 2,
Changes may be made within the scope and spirit of the appended claims which define what is believed to be new and desired to have protected by Letters Patent.
I claim:
5 1. The method of producing single crystal silicon bodies comprising providing upon a single crystal silicon seed body layers of atomic silicon, and heating each layer at least once up to the melting thereof.
2. The method according to claim 1, wherein the seed body is disc-shaped.
3. The method according to claim 1, wherein the seed body is pin-shaped.
4. The method according to claim 1, comprising vaporizing the atomic silicon on said seed body.
5. The method according to claim 1, comprising producing the atomic silicon upon said seed body from gaseous silicon compounds by thermal decomposition of such compounds.
6. The method according to claim 1, comprising producing the atomic silicon by reaction of gaseous silicon compounds.
7. The method according to claim 1, comprising repeatedly heating each layer up to melting thereof.
8. The method according to claim 1, comprising effecting said heating by the action of high frequency fields.
9. The method according to claim 1, comprising effecting said heating by the action of cathode drop pulses.
10. The method according to claim 1, comprising effecting said heating by the action of discharge pulses.
ll. The method according to claim 1, comprising providing in addition to said atomic silicon atomically deposited threeor five-valence elements.
References Cited in the file of this patent UNITED STATES PATENTS Hannay: Semiconductors, February 1959, pages 137- 1.

Claims (1)

1. THE METHOD OF PRODUCING SINGLE CRYSTAL SILICON BODIES COMPRISING PROVIDING UPON A SINGLE CRYSTAL SILICON SEED BODY LAYERS OF ATOMIC SILICON, AND HEATAING EACH LAYER AT LEAST ONCE UP TO THE MELTING THEREOF.
US26798A 1960-05-04 1960-05-04 Method of producing silicon single crystals Expired - Lifetime US3031270A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156591A (en) * 1961-12-11 1964-11-10 Fairchild Camera Instr Co Epitaxial growth through a silicon dioxide mask in a vacuum vapor deposition process
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3328213A (en) * 1963-11-26 1967-06-27 Int Rectifier Corp Method for growing silicon film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2712621A (en) * 1949-12-23 1955-07-05 Gen Electric Germanium pellets and asymmetrically conductive devices produced therefrom
US2803315A (en) * 1955-03-11 1957-08-20 Hepworth Machine Company Inc Water cooled brakes
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2712621A (en) * 1949-12-23 1955-07-05 Gen Electric Germanium pellets and asymmetrically conductive devices produced therefrom
US2803315A (en) * 1955-03-11 1957-08-20 Hepworth Machine Company Inc Water cooled brakes
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3156591A (en) * 1961-12-11 1964-11-10 Fairchild Camera Instr Co Epitaxial growth through a silicon dioxide mask in a vacuum vapor deposition process
US3328213A (en) * 1963-11-26 1967-06-27 Int Rectifier Corp Method for growing silicon film

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