US2929739A - Aluminum plating - Google Patents
Aluminum plating Download PDFInfo
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- US2929739A US2929739A US772517A US77251758A US2929739A US 2929739 A US2929739 A US 2929739A US 772517 A US772517 A US 772517A US 77251758 A US77251758 A US 77251758A US 2929739 A US2929739 A US 2929739A
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- Prior art keywords
- aluminum
- heat decomposable
- heated
- alkyl
- deposition
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- 229910052782 aluminium Inorganic materials 0.000 title claims description 102
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 73
- 238000007747 plating Methods 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 150000004678 hydrides Chemical class 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 17
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 12
- -1 aluminum compound Chemical class 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000006200 vaporizer Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 150000001336 alkenes Chemical class 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 5
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 5
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- LQIIEHBULBHJKX-UHFFFAOYSA-N 2-methylpropylalumane Chemical class CC(C)C[AlH2] LQIIEHBULBHJKX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- SNDBFKDTUORSRY-UHFFFAOYSA-N bis(2-methylpropyl)-propylalumane Chemical compound CCC[Al](CC(C)C)CC(C)C SNDBFKDTUORSRY-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
Definitions
- This invention relates to the deposition of aluminum from volatilizable, heat decomposable aluminum bearing compounds.
- a reactive additive olefinic gas may be introduced into the plating operation with the aluminum containing compound to provide for decomposition of the compound at lower temperatures and to materially improve film continuity in the case of aluminum coatings on articles of steel, copper and the like.
- isobutylene is provided as a reactive gas with aluminum tri-iso'outyl as the plating gas.
- the function of the isobutylene is to react with hydrides of aluminum which tend to form when aluminum tri-isobutyl breaks down.
- the hydrides, which form either during the plating process itself or in storage of the aluminum tri-isobutyl include aluminum hydride, aluminum di-isobutyl hydride, and aluminum monobutyl .hydride.
- the reaction of the isobutylene with these hydrides tends to reproduce the tri-isobutyl in accordance with the following exemplary reaction:
- Aluminum containing compounds useful in conjunction with a reactive additive olefiuic gas are: alumi- .num tri-isopropyl, aluminum tri-isoamyl, aluminum triisohexyl, and mixed aluminum alkyls such as diethyl .;isopropyl aluminum, propyl di-isobutyl aluminum, ethyl propyl isobutyl aluminum.
- the object on which thealumlnum is to be r deposited in the practice of the invention need not be heated above 700 F. in order to attain adequate deposition of aluminum; preferably the object is at about 500 F. This is in contrast to processes wherein the olefin is not employed and temperatures well above 700 F. and frequently above 1000 F. are required to secure adequate plating rates.
- Figure 1 is a schematic view illustrating an apparatus arrangement useful in the practice of the invention.
- Figure 2 is across section of a tube metallized in accordance with the invention.
- the substrate to be plated is suitably de-oxidized, cleaned and preferably degreased prior to commencing an operation; also, as noted hereinafter, the apparatus itself is evacuated by purging with an inert gas.
- the numeral 1 designates a conduit having a valve 2 and through which the metallizing gas is fed to the vaporizer 3.
- the metallizing gas is commercial aluminum triisobutyl and contains approximately 10 percent of aluminum tri-isobutyl hydride as used.
- the vaporizer 3 is heated by means of an electrical coil 4 at a temperature of approximately 475 F.
- This metallizing gas enters the vaporizer in liquid form through a depending conduit 5.
- Simultaneously argon gas is introduced through conduit 6 having a valve 7 and is directed toward the vaporizer 3.
- the argon utilized is substantially oxygen free, testing less than 0.0005 percent oxygen by volume.
- the argon and isobutylene mix with the aluminum tri-isobutyl which vaporizes and passes out through orifice 10.
- Aluminum tri-isobutyl hydride is a liquid and that portion of the liquid which does not react with the isobutylene remains in the bottom of the vaporizer as indicated at 11.
- the isobutylene serves to react with the tri-isobutyl hydride to produce tri-isobutyl, as already noted.
- the argon with the aluminum tri-isobutyl passes outwardly through the orifice 10 towards the article to be plated, designated at 12.
- this article is a tube of copper which is sealed at one end to a conduit 13 having a valve 14. At its other extremity the tube 12 is sealed to an exhaust conduit 15 having a valve 16.
- Thealuminum tri-isobutyl flows through open valve 14 to the copper tube, which is itself maintained at a temperature of about 525 F. by any suitable heating means such as resistance heater 17.
- the aluminum tri-isobutyl decom poses, depositing aluminum on the interior. of the copper tube as indicated at 18. Normally a thickness of 1% mil is readily achieved over the interior of the copper tube (0 I.D.) within 3 hours.
- the gas flow rates at F. and atmospheric pressure to achieve this deposition are about:
- this isobutyl aluminum flow is equivalent to about cc. per minute of the liquid tri-isobutyl.
- the carrier gas (argon) and the isobutylene are heated prior to their introduction to the system to a temperature of 200-220 vF.
- Gases of decomposition pass outwardly through valve 16 of the conduit 15 together with undecomposed aluminum tri-isobutyl.
- a by-pass conduit 9 provided with valve 2%) is located in the conduit 14.
- an intermediate conduit 21, provided with a valve 22 is located in the conduit 14.
- valves 14 and 16 may be opened, with valves 29 and 22 closed, to completely purge the apparatus by permitting argon flow through valve 14, the copper substrate 12 and valve 16also.
- the operation of metallizing is effected at atmospheric pressure, although pressures as low as mm. of mercury may be employed.
- the aluminum coating on the interior of the tube 12 is substantially uniform.
- gases may be used as the carrier in the gas plating process, for example, nitrogen and helium.
- propylene may be substituted for the isobutylcne and nitrogen for the argon under the same conditions as set forth hereinbefore.
- the nitrogen employed has less than 0.0005 percent oxygen by volume.
- liquids such as cyclopentadiene have characteristics rendering them useful as substitutes for isobutylene and propylene, they are less convenient to handle, requiring vaporization for admixing with the decomposable aluminum compound in the vaporizer.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound to thereby occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufiicient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and isobutylene with a carrier gas to occasion deposition of the aluminum on the heated object, continuing the gas fiow to the heated object to build up a'continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufiicient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and propylene with a carrier gas to occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and isobutylene with argon to occasion deposition of the aluminum on the heated obiect, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and propylene with nitrogen to occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature of between about 500 F. to about 700' R, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound to thereby occasion deposition of the aluminum on the heated object, continuing the-gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
- a process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature of about 525 F., contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound 6 to thereby occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
March 22, 1960 E. R. BREINING ETAL 2,929,739
ALUMINUM PLATING Filed Nov. 7, 1958 14770, IVEXS ALUMINUM PLATING Elmer Robert Breining, Dayton, Wilbur M. Boiton, Piqua, and Fritz O. Deutscher, Dayton, Ohio, assignors, I by mesne assignments, to Union Carbide Corporation, New York, N .Y., a corporation of New York Application November 7, 1958, Serial No. 772,517
Claims. (Cl. 117-107) This invention relates to the deposition of aluminum from volatilizable, heat decomposable aluminum bearing compounds.
It has previously been suggested to utilize aluminum compounds in the gaseous state to procure deposits of aluminum metal and coatings of aluminum. Ditficulties encountered have included the necessity for using relatively high temperatures to efiect the decomposition of the aluminum compound; purity of deposit and thickness of deposit have also been limited and much effort has been expended to overcome these drawbacks.
. It has now been found that a reactive additive olefinic gas may be introduced into the plating operation with the aluminum containing compound to provide for decomposition of the compound at lower temperatures and to materially improve film continuity in the case of aluminum coatings on articles of steel, copper and the like.
In a specific application isobutylene is provided as a reactive gas with aluminum tri-iso'outyl as the plating gas. The function of the isobutylene is to react with hydrides of aluminum which tend to form when aluminum tri-isobutyl breaks down. The hydrides, which form either during the plating process itself or in storage of the aluminum tri-isobutyl include aluminum hydride, aluminum di-isobutyl hydride, and aluminum monobutyl .hydride. The reaction of the isobutylene with these hydrides tends to reproduce the tri-isobutyl in accordance with the following exemplary reaction:
.showed a refinement in the grain size of the aluminum deposit. This is believed to be due to the microscopic dissolution of the aluminum surface according to the equation previously cited.
Other aluminum containing compounds useful in conjunction with a reactive additive olefiuic gas are: alumi- .num tri-isopropyl, aluminum tri-isoamyl, aluminum triisohexyl, and mixed aluminum alkyls such as diethyl .;isopropyl aluminum, propyl di-isobutyl aluminum, ethyl propyl isobutyl aluminum.
In general the object on which thealumlnum is to be r deposited in the practice of the invention need not be heated above 700 F. in order to attain adequate deposition of aluminum; preferably the object is at about 500 F. This is in contrast to processes wherein the olefin is not employed and temperatures well above 700 F. and frequently above 1000 F. are required to secure adequate plating rates.
The invention will be more fully understood by reference to the following detailed description and accompanying drawing wherein:
Figure 1 is a schematic view illustrating an apparatus arrangement useful in the practice of the invention; and
Figure 2 is across section of a tube metallized in accordance with the invention.
In the practice of the invention the substrate to be plated is suitably de-oxidized, cleaned and preferably degreased prior to commencing an operation; also, as noted hereinafter, the apparatus itself is evacuated by purging with an inert gas.
Referring to the drawing the numeral 1 designates a conduit having a valve 2 and through which the metallizing gas is fed to the vaporizer 3. In the present instance the metallizing gas is commercial aluminum triisobutyl and contains approximately 10 percent of aluminum tri-isobutyl hydride as used.
The vaporizer 3 is heated by means of an electrical coil 4 at a temperature of approximately 475 F. This metallizing gas enters the vaporizer in liquid form through a depending conduit 5. Simultaneously argon gas is introduced through conduit 6 having a valve 7 and is directed toward the vaporizer 3. As the argon passes toward the vaporizer it mixes with isobutylene gas passing through the conduit 8 having valve 9. The argon utilized is substantially oxygen free, testing less than 0.0005 percent oxygen by volume.
Within the vaporizer the argon and isobutylene mix with the aluminum tri-isobutyl which vaporizes and passes out through orifice 10. Aluminum tri-isobutyl hydride is a liquid and that portion of the liquid which does not react with the isobutylene remains in the bottom of the vaporizer as indicated at 11. The isobutylene, however, serves to react with the tri-isobutyl hydride to produce tri-isobutyl, as already noted. The argon with the aluminum tri-isobutyl passes outwardly through the orifice 10 towards the article to be plated, designated at 12.
As shown in Figure 1 this article is a tube of copper which is sealed at one end to a conduit 13 having a valve 14. At its other extremity the tube 12 is sealed to an exhaust conduit 15 having a valve 16. Thealuminum tri-isobutyl flows through open valve 14 to the copper tube, which is itself maintained at a temperature of about 525 F. by any suitable heating means such as resistance heater 17. The aluminum tri-isobutyl decom poses, depositing aluminum on the interior. of the copper tube as indicated at 18. Normally a thickness of 1% mil is readily achieved over the interior of the copper tube (0 I.D.) within 3 hours.
The gas flow rates at F. and atmospheric pressure to achieve this deposition are about:
this isobutyl aluminum flow is equivalent to about cc. per minute of the liquid tri-isobutyl. Suitably the carrier gas (argon) and the isobutylene are heated prior to their introduction to the system to a temperature of 200-220 vF.
Gases of decomposition pass outwardly through valve 16 of the conduit 15 together with undecomposed aluminum tri-isobutyl.
For purposes of complete operation a by-pass conduit 9 provided with valve 2%) is located in the conduit 14. For thepurposes of initial purging the apparatus of air and moisture, prior to metallizing, an intermediate conduit 21, provided with a valve 22, is located in the conduit 14. Thus to purge the apparatus, through the vaporizer, it is merely necessary to close valve 14 and to open valves 22 and 7, and to pass a gas such as argon through the equipment. When the vaporizer and the lines leading thereto are sufi'iciently clear, valves 14 and 16 may be opened, with valves 29 and 22 closed, to completely purge the apparatus by permitting argon flow through valve 14, the copper substrate 12 and valve 16also.
Suitably the operation of metallizing is effected at atmospheric pressure, although pressures as low as mm. of mercury may be employed. As may be noted from Figure 2 the aluminum coating on the interior of the tube 12 is substantially uniform.
Other gases may be used as the carrier in the gas plating process, for example, nitrogen and helium.
By way of further example propylene may be substituted for the isobutylcne and nitrogen for the argon under the same conditions as set forth hereinbefore. The nitrogen employed has less than 0.0005 percent oxygen by volume.
While liquids such as cyclopentadiene have characteristics rendering them useful as substitutes for isobutylene and propylene, they are less convenient to handle, requiring vaporization for admixing with the decomposable aluminum compound in the vaporizer.
It will be understood that this invention is susceptible to modification in order to adapt it to difierent usages and conditions and accordingly, it is desired to comprehend such modifications within this invention as may fall within the scope of the appended claims.
What is claimed is:
1. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable aluminum alkyl compound; the improvement which comprises: intermixing in the gaseous state a heat decomposable aluminum containing compound which tends to form hydrides of aluminum and an unsaturated compound capable of reacting with such hydrides to form the heat decomposable aluminum compound.
2. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable aluminum alltyl compound; the improvement which comprises: intermixing in the gaseous state a heat decomposable aluminum alkyl with an olefin.
3. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable aluminum allzyl compound; the improvement which comprises: intermixing in the gaseous state a heat decomposable aluminum alkyl and an alpha olefin.
4. In an aluminum deposition process, wherein a substrate, is heated in the presence of a heat decomposable aluminum alkyl compound; the improvement which comprises: the step of intermixing in the gaseous state a heat decomposable aluminum alkyl and isobutylene.
5. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable alumnium alkyl compound; the improvement which comprises: the step of intermixing in the gaseous state a heat decomposable aluminum alkyl and propylene.
6. In an aluminum deposition process, wherein a sub.- strate is heated in the presence of a heat decomposable aluminum alkyl compound; the improvement which comprises: the step of intermixing in the gaseous state a heat decomposable aluminum alkyl and ethylene.
7. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable aluminum alkyl compound; the improvement which comprises: the step of intermixing in the gaseous state a heat decomposable aluminum alkyl and 3 methyl-butene-l.
8. In an aluminum deposition process, wherein a substrate is heated in the presence of a heat decomposable aluminum alkyl compound; the improvement which comprises: the step of intermixing in the gaseous state a heat decomposable aluminum alkyl and cyclopentadiene.
9. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound to thereby occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
10. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufiicient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and isobutylene with a carrier gas to occasion deposition of the aluminum on the heated object, continuing the gas fiow to the heated object to build up a'continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
11. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufiicient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and propylene with a carrier gas to occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
12. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and isobutylene with argon to occasion deposition of the aluminum on the heated obiect, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
13. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature sufficient to decompose a gaseous aluminum alkyl, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and propylene with nitrogen to occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
14. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature of between about 500 F. to about 700' R, contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound to thereby occasion deposition of the aluminum on the heated object, continuing the-gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas flow.
15. A process for the deposition of aluminum which comprises the steps of heating an object on which the aluminum is to be deposited in an evacuated atmosphere to a temperature of about 525 F., contacting the heated object with a gas flow containing a heat decomposable aluminum alkyl and a gaseous olefin capable of reacting with such alkyl to form a heat decomposable compound 6 to thereby occasion deposition of the aluminum on the heated object, continuing the gas flow to the heated object to build up a continuous film of aluminum on the object, and thereafter removing the object from the gas References Cited in the file of this patent UNITED STATES PATENTS Davis et al Nov. 25, 1952 2,847,320 Bufiofi Aug. 12, 1958
Claims (1)
1. AN ALUMINUM DESPOSITION PROCES, WHEREIN A SUBSTRATE IS HEATED IN THE PRESENCE OF A HEAT DECOMPOSABLE ALUMINUM ALKYL COMPOUND, THE IMPROVEMENT WHICH COMPRISES: INTERMIXING IN THE GASEOUS STATE A HEAT DECOMPOSABLE ALUMINUM CONTAINING COMPOUND WHICH TENDS TO FORM HYDRIDES OF ALUMINUM AND AN UNSATURATED COMPOUND
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US772517A US2929739A (en) | 1958-11-07 | 1958-11-07 | Aluminum plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US772517A US2929739A (en) | 1958-11-07 | 1958-11-07 | Aluminum plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2929739A true US2929739A (en) | 1960-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US772517A Expired - Lifetime US2929739A (en) | 1958-11-07 | 1958-11-07 | Aluminum plating |
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| Country | Link |
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| US (1) | US2929739A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3282243A (en) * | 1965-09-08 | 1966-11-01 | Ethyl Corp | Movable means comprising vapor-plating nozzle and exhaust |
| US3376173A (en) * | 1960-05-02 | 1968-04-02 | Ethyl Corp | Encapsulation of light metal hydrides as rocket propellants |
| US3402067A (en) * | 1965-09-24 | 1968-09-17 | Engelhard Ind Inc | Method for depositing aluminum film |
| US4433012A (en) * | 1980-07-10 | 1984-02-21 | Itt Industries, Inc. | Process for the pyrolytic deposition of aluminum from TIBA |
| US4460618A (en) * | 1978-05-25 | 1984-07-17 | Itt Industries, Inc. | Aluminum deposition on semiconductor bodies |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2619433A (en) * | 1949-07-14 | 1952-11-25 | Ohio Commw Eng Co | Method of gas plating |
| US2847320A (en) * | 1956-05-08 | 1958-08-12 | Ohio Commw Eng Co | Method for gas plating with aluminum organo compounds |
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1958
- 1958-11-07 US US772517A patent/US2929739A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2619433A (en) * | 1949-07-14 | 1952-11-25 | Ohio Commw Eng Co | Method of gas plating |
| US2847320A (en) * | 1956-05-08 | 1958-08-12 | Ohio Commw Eng Co | Method for gas plating with aluminum organo compounds |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3376173A (en) * | 1960-05-02 | 1968-04-02 | Ethyl Corp | Encapsulation of light metal hydrides as rocket propellants |
| US3282243A (en) * | 1965-09-08 | 1966-11-01 | Ethyl Corp | Movable means comprising vapor-plating nozzle and exhaust |
| US3402067A (en) * | 1965-09-24 | 1968-09-17 | Engelhard Ind Inc | Method for depositing aluminum film |
| US4460618A (en) * | 1978-05-25 | 1984-07-17 | Itt Industries, Inc. | Aluminum deposition on semiconductor bodies |
| US4433012A (en) * | 1980-07-10 | 1984-02-21 | Itt Industries, Inc. | Process for the pyrolytic deposition of aluminum from TIBA |
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