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US2858730A - Germanium crystallographic orientation - Google Patents

Germanium crystallographic orientation Download PDF

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Publication number
US2858730A
US2858730A US556642A US55664255A US2858730A US 2858730 A US2858730 A US 2858730A US 556642 A US556642 A US 556642A US 55664255 A US55664255 A US 55664255A US 2858730 A US2858730 A US 2858730A
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Prior art keywords
ingot
axis
plane
octahedron
group
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Expired - Lifetime
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US556642A
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English (en)
Inventor
James S Hanson
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Priority to NL105904D priority Critical patent/NL105904C/xx
Priority to NL213347D priority patent/NL213347A/xx
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US556642A priority patent/US2858730A/en
Priority to DEJ19431A priority patent/DE1165163B/de
Priority to FR1179252D priority patent/FR1179252A/fr
Priority to GB39533/56A priority patent/GB846915A/en
Application granted granted Critical
Publication of US2858730A publication Critical patent/US2858730A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Definitions

  • This invention relates to semiconductor technology and in particular to a method of orienting a monocrystalline ingot of germanium so that it may be cut parallel to a particular crystallographic plane.
  • This invention is directed to a novel method of optically orienting a monocrystalline germanium ingot so that a particular crystallographic axis of the ingot will coincide with reference surfaces of the base on which the-ingot will eventually be mounted. Then the ingot is so'mounted with respect, for example, to the [111] crystallographic axis, cuts made normal to these reference surfaces will produce germanium wafers having a [111] crystallographic plane of the cubic structure parallel to the major faces of the wafer, and once the orientation is established the ingot may be cut parallel to any desired crystallographic plane by cutting the ingot at the proper angles with respect to the reference surfaces.
  • a primary object of this invention is to provide an optical means of orienting a monocrystalline ingot so as to establish the location of a particular crystallographic plane within the ingot.
  • Another object is to provide a means of orienting a monocrystalline ingot so as to establish the location of a [111] crystallographic plane.
  • Another object is to provide a means of mounting the monocrystalline ingot for dicing normal to a particular axis of the crystal structure.
  • a related object is a method of determining the error angle made by a cut crystal surface with respect to a particular crystollagraphic plane.
  • Another related object is to provide a method of form- 2,858,730 Patented Nov. 4, 1958.
  • Figure 1 is a view of an octahedron crystalline structure having two of its [111] faces corresponding to the X2 plane.
  • Figure 2 shows a monocrystalline germanium ingot showing the [111] plane flats and serrations.
  • Figure 3 is a view of the monocrystalline ingot mounted in an orienting fixture.
  • Figure 4 is a technique of orientation using a narrow beam of sunlight.
  • FIG. 5 is another technique of orientation showing collirnated artificial light.
  • Figure 6 is a view of the oriented crystal mounted for' cutting into wafers.
  • the octahedron of Figure 1 has corners labeled A, B, C, D, E 'and F. All surfaces correspond to [111] crystallographic plane surfaces and the planes represented by quadrilaterals ABDE, ACEF, and BCDF correspond to what is known in the art as the crystallographic plane.
  • This angle in practice hasbeen found to be on the order of 19 /2 and is labeled in the figure-as alpha (or);
  • These angles are labeled a. Angles a and a are equal.
  • the remaining two planes of the octahedron that are parallel to the X2 plane are ABC and DEF.
  • FIG. 2 a pictorial view is presented of a typical germanium ingot.
  • This ingot has been grown by the technique known as Crystal Pulling that is standard practice in the art.
  • the method of this invention is not limited to ingots grown by a particular method since the octahedron shape is a property of the crystallographic structure and not of the method of growing.
  • the ingot 1 of Figure 2 has a body 2 of monocrystalline germanium that was grown from a seed crystal 3 provided with reference surfaces 4 and 5 which will be described in detail later. On most ingots areas termed ingot flats 6 are found.
  • a group of flats found near the seed 3 end of the ingot corresponds to the first group of [111] planes ACD, ABF, and BCE of the octahedron.
  • the flats are spaced approximately 120 apart around the ingot.
  • Another group of flats at the opposite end of the ingot corresponds to the second group of [111] planes CDE, BEF, and ADF.
  • the flats on the seed 3 end of the ingot are rotated 60 around the ingot from those on the opposite end.
  • the tendency to form flats varies tremendously from ingot to ingot; some ingots are decidedly triangular or square depending on the crystallographic orientation of the seed, while others are almost perfect solids of revolution with only microscopic traces of flats.
  • an ingot flat may consist of anywhere from one or two to several hundred facets, depending on the many disturbances that can occur at the liquidus-solidus interface during freezing of the ingot from the melt.
  • cylindrical and octahedron shapes form the two extremes in grown monocrystalline ingots.
  • the facets of these areas may serve as optically reflective areas as described above.
  • some or even all of these flats 6 may be missing.
  • the remaining flat or flats can serve as'a guide to locate those that are missing.
  • the missing areas can be synthesized by abrading, lapping, or similar means.
  • crystal ingots tend to exhibit facets on the surfaces of the above described flats 6 as indicated by the reference numeral 7 in Figure 2 and that these facets are parallel to the [111] crystallographic plane.
  • these facets are of more than suflicient reflective quality to serve as an optically reflective area in the desired location.
  • the manner of properly synthesizing spaced areas with sufficient optical reflectivity where natural flats 6 are missing will be described in detail below.
  • the worst case would occur when there were no flats 6 at allon the crystal ingot and there were no facets of sufl'icient quality to be useable.
  • the three flats 6 would have to be established by abrading in connection with an etching step to be described below.
  • the preferential etch by its nature creates etch pit surfaces that are parallel to a [111] crystallographic plane.
  • the angle of reflection of a light source will be so different from the angle of reflection of the other planes in the group that no reflection will be observed at the place in which the reflected light would normally fall.
  • the optical quality of a particular area for the purposes of this method is indicated by the quantity of directly reflected light from the area in relation to the quantity of randomly reflected or diffused light from the area.
  • this method relies for its accuracy on a comparison of the position of a spot of light reflected from each of the three areas the more light that is reflected and the more sharply defined and more concentrated the spot into which that light is focused, the greater will be the accuracy of the method.
  • An area is of satisfactory optical quality for this method when the light reflected from the area forms a spot which can be easily distinguished from the background reflected diffused light.
  • the ingot having the three required optically reflecting areas established is now positioned in a suitable fixture so that the ingot may be adjusted for rotation about its [111] axis.
  • a suitable fixture An example of such a fixture is shown in Figure 3 wherein the crystal 1 has a shaft 8 affixed to one end as through the use of a sealing wax or similar cement.
  • the shaft 8 is supported in a cylinder 9 by two sets of three screws each, respectively sets 10 and 11.
  • the cylinder 9 rests in a pair of V-shaped supports 12- and 13 so that it is free to rotate about its geometric axis.
  • the purpose of this fixture is to permit the [111] axis of the ingot to be shifted to coincide with the rotational axis of the cylinder 9. This is accomplished by adjusting the two sets of screws 10 and 11.
  • the ingot 1 is shown mounted in the fixture as in Figure 3.
  • a target 14 is mounted at a suitable distance from the crystal. Six feet has been found to be a very satisfactory distance from target to ingot for crystallographic orientation within i0.5 tolrance.
  • the crystal and its fixture are mounted in such a manner that sun light or light from some other suitably collimated source is reflected from a mirror 15 to one of the required three areas on the crystal and is further reflected to the target 14.
  • the crystal is then turned by rotating the cylinder 9 through approximately 120 to bring the next flat area into position for reflection.
  • the position of the reflected sun light on the target will be an indication of the amount and the direction in which the [111] axis of the crystal must be tilted to bring it into parallel with the rotational axis of the cylinder 9. Adjustment of the two sets of screws 10 and 11 will accomplish this movement. -The crystal is again rotated to the third flat area and the position of the reflected light on the target is again observed and proper adjustment of the crystallographic axis of .the ingot is again made. This is continued until a reflected light spot from each of the three flat areas passes in turn through the same point on the target as the cylinder 9 is rotated.
  • a technique is shown whereby the artificial collimated light beam is provided.
  • a light 16 is provided shining through a small aperture 17 such as a hole in, a piece of cardboard onto a mirror 18.
  • the light is reflected from the mirror 18,.through a second aperture 19, to the flat areas of the ingot 1, back through the aperture 19, to an observer 20 looking through a pin hole in the silver of the mirror 18. It has been found if the light 16 is located around 5 to feet from the crystal 1, although once again greater distances provide greater accuracy, and the aperture 19 is located approximately one foot from the crystal, results at least comparable to the sun light method described above will be acquired.
  • the crystal now may be mounted in a suitable fixture for cutting, if cutting is desired.
  • a suitable fixture for cutting This may be seen in Figure 6 wherein the cylinder 9 is mounted at the intersection of two sets of parallel blocks 21 and 22, and 23 and 24.
  • the crystal 1 is mounted as through the use of sealing wax or a suitable cement to a supporting surface so that saw 25 may now cut the ingot 1 at right angles to the axis of the cylinder 9 and since the cylinder axis now coincides with V the [111] axis of the ingot, the germanium wafers so obtained will have a [111] crystallographic plane parallel to the major face of the wafer.
  • Wafers may also be cut parallel to other desired crystallographic planes provided the ingot is rotationally positioned about its [111] axis with respect to the fixture reference surfaces so that a [111] facet on the ingot corresponding to a particular one of a group of planes of the octahedron of Figure 1 makes one particular angle with this reference surface, and that the saw cut itself shall make another particular angle with the [111] axis of the ingot.
  • the determination of the above mentioned angles may be readily made by one skilled in the art by application of the geometry of the octahedron of Figure 1 to the ingot. 1
  • the saw 25 may also cut seed crystals having suflicient reference information sites so that they may be oriented with respect to the [111] axis through the use of these sites.
  • a seed crystal is shown as 3 in Figure 2 and in this case the reference sites are surfaces 4 and 5, parallel to the [111] axis and at to each other. It should be understood, however, that the seed crystal is not limited to a particular shape nor are the reference sites limited to a particular type so long as there is sufficient geometric information present in the reference sites or in the combination of seed crystal shape and reference sites so that orientation with respect to the [111] axis can be performed.-
  • octahedron relationships can be further utilized by one skilled in the art in determining error angles between cut surfaces on ingots, Wafers, etc., and the desired crystallographic plane by means of the rotational cylinder device of Figure 3, and utilizing optical reflections from etch pit facets in the cut surfaces corresponding to the [111] octahedron plane ABC, or DEF of Figure 1.
  • the method of orienting a germanium monoc-rystalline ingot with respect to the [111] axis thereof comprising in combination the steps of determining the location of at least three reflecting areas on the surface of said ingot, each said area being parallel with a different plane of a corresponding group of planes of the crystalline octahedron that intersect at the same angle and at the same point said axis, said axis being normal to a fourth [111] plane not a member of said group of planes of the crystalline octahedron, adjustably mounting said ingot for rotation, impinging light from a single source on said ingot in the vicinity of said areas and adjusting the axis of rotation of said ingot so that said light is reflected to the same position from each of said areas when said ingot is rotated.
  • the method of orienting a germanium monocrystalline ingot with reference to the [100] crystallographic plane comprising in combination the steps of determining the location of at least three reflecting surfaces on said ingot, each of said surfaces being parallel to a different plane of a corresponding group of planes of the crystalline octahedron, each plane intersecting the same [100] axis at the same angle and at the same point; said [100] axis being normal to a fourth [100] plane of said octahedron not a member of said group, adjustably mounting said ingot for rotation; impinging light from a single source on said ingot in the vicinity of said reflecting surfaces; and adjusting the axis of rotation of said ingot so' that said light falls on the same position when reflected from each of said three surfaces in turn as said ingot is rotated.
  • the method of orienting a germanium monoc-rystalline ingot with reference to the [111] crystallographic plane comprising in combination the steps of identifying at least three areas on said ingot, each of said areas being approximately parallel to a different plane of a corresponding group of three planes of the crystalline octahedron, each plane intersecting the same [111] axis at the same angle and at the same point; said [111] axis being normal to a fourth [111] plane of said octahedron not a member of said group treating each of said areas with a [111] plane preferential etching solution; adjustably mounting said ingot for rotation; impinging light from'a single source on said ingot in the vicinity of said areas; and adjusting the axis of rotation of said ingot so that said light is reflected to the same position from each of said three areas as said ingot is rotated.
  • the method of orienting a monocrystalline germanium ingot with respect to the crystallographic plane comprising in combination the steps of treating flat areas on the surface of said ingot with a [100] plane preferential etching solution; selecting three of said treated areas, each selected area being parallel to a different plane of a corresponding group of three planes of the crystalline octahedron, each plane of said group intersecting the same [100] axis of said octahedron at the same angle and at the same point; said [100] axis being normal to a fourth [100] plane of said octahedron not a member of said group, adjustably mounting said ingot for rotation; impinging light from a single source on said ingot in the vicinity of said areas; and adjusting the axis of rotation of said ingot so that said light is reflected to the same position from each of said three areas when said ingot is rotated.
  • a method of acquiring suflicient information for the geometrical determination of the relationship of a monocrystalline ingot of germanium with respect to a desired crystallographic plane comprising in combination the steps of determining the location of at least three reflecting areas on the surface of said ingot, each said area being parallel with a different plane of a corresponding group of planes of the crystalline octahedron, each plane of which intersects at the same angle and at the same points a [111] axis of said octahedron; said [111] axis being normal to a fourth [111] plane of said octahedron not a member of said group, adjustably mounting said ingot for rotation; impinging light from a single source on said ingot in the vicinity of said areas; adjusting the axis of rotation of said ingot so that said light is reflected to the same position from each of said areas when said ingot is rotated; and rotationally positioning said ingot so that one of said reflecting areas is in a known position with respect to a surface parallel to
  • a method of orienting a monocrystalline ingot of germanium with respect to a desired crystallographic plane comprising in combination the steps of determining the location of at least three reflecting areas on the surface of said ingot, each said area being parallel with a different plane of a corresponding group of planes of the crystalline octahedron that intersect a [100] axis of said octahedron at the same angle and at the same point; said [100] axis being normal to a fourth [100] plane of said octahedron not a member of said group, adjustably mounting said ingot for rotation; impinging light from a single source on said ingot in the vicinity of said areas, adjusting the axis of rotation of said ingot so that said light is reflected to the same position from each of said areas when said ingot is rotated, and rotating one of said areas into a particular geometric relationship with said axis whereupon the geometric relationships applicable to said octahedrons are applicable to said ingot to determine the location of said

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  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)
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US556642A 1955-12-30 1955-12-30 Germanium crystallographic orientation Expired - Lifetime US2858730A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL105904D NL105904C (nl) 1955-12-30
NL213347D NL213347A (nl) 1955-12-30
US556642A US2858730A (en) 1955-12-30 1955-12-30 Germanium crystallographic orientation
DEJ19431A DE1165163B (de) 1955-12-30 1956-12-22 Schneidvorrichtung fuer Germanium-Halbleitereinkristalle in Barrenform zum Herstellen von Halbleiterkoerpern fuer Halbleiterbauelemente
FR1179252D FR1179252A (fr) 1955-12-30 1956-12-27 Orientation cristallographique du germanium
GB39533/56A GB846915A (en) 1955-12-30 1956-12-28 Improvements in methods of producing germanium crystalline bodies

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FR (1) FR1179252A (nl)
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NL (2) NL105904C (nl)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US3054709A (en) * 1958-06-10 1962-09-18 Ass Elect Ind Woolwich Ltd Production of wafers of semiconductor material
US3143447A (en) * 1960-12-22 1964-08-04 Marriner K Norr Chemical etches for lead telluride crystals
US3226269A (en) * 1960-03-31 1965-12-28 Merck & Co Inc Monocrystalline elongate polyhedral semiconductor material
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3506509A (en) * 1967-11-01 1970-04-14 Bell Telephone Labor Inc Etchant for precision etching of semiconductors
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3634737A (en) * 1969-02-07 1972-01-11 Tokyo Shibaura Electric Co Semiconductor device
US3731861A (en) * 1971-10-28 1973-05-08 Rca Corp Method for dicing materials having a hexagonal crystal structure
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
US3834265A (en) * 1973-02-16 1974-09-10 Gillette Co Ceramic cutting instruments
US4419151A (en) * 1981-03-11 1983-12-06 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Crystal and germanium modification and process for its preparation
US4490441A (en) * 1982-07-06 1984-12-25 Honeywell Inc. Encapsulated CDTe boules for multiblade wafering
US4564494A (en) * 1982-07-06 1986-01-14 Honeywell Inc. Encapsulant of CdTe boules for multiblade wafering
US4581969A (en) * 1984-07-05 1986-04-15 Kim George A Ultramicrotome diamond knife
US4643161A (en) * 1984-07-05 1987-02-17 Kim George A Method of machining hard and brittle material
US4697489A (en) * 1984-07-05 1987-10-06 Kim George A Ultramicrotome tool
US4759130A (en) * 1985-11-12 1988-07-26 U.S. Philips Corporation Goniometer head arrangement
US4884887A (en) * 1987-01-23 1989-12-05 Hewlett-Packard Company Method for positioning a crystal ingot
EP0738572A1 (fr) * 1995-04-22 1996-10-23 HAUSER, Charles Procédé pour l'orientation de monocristaux pour le découpage dans une machine de découpage et dispositif pour la mise en oeuvre de ce procédé
US5769941A (en) * 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
CN102528951A (zh) * 2010-12-28 2012-07-04 湖北泰晶电子科技有限公司 一种取石英晶体籽晶片的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
US4667650A (en) * 1985-11-21 1987-05-26 Pq Corporation Mounting beam for preparing wafers
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
CN113232176B (zh) * 2021-05-06 2022-07-12 西安交通大学 用于不同晶体取向铸造单晶高温合金的籽晶切割装置及方法

Citations (1)

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US2423357A (en) * 1942-01-13 1947-07-01 Gen Electric Method of determining the optical axes of quartz crystals

Patent Citations (1)

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US2423357A (en) * 1942-01-13 1947-07-01 Gen Electric Method of determining the optical axes of quartz crystals

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US3054709A (en) * 1958-06-10 1962-09-18 Ass Elect Ind Woolwich Ltd Production of wafers of semiconductor material
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
US3226269A (en) * 1960-03-31 1965-12-28 Merck & Co Inc Monocrystalline elongate polyhedral semiconductor material
US3143447A (en) * 1960-12-22 1964-08-04 Marriner K Norr Chemical etches for lead telluride crystals
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
US3506509A (en) * 1967-11-01 1970-04-14 Bell Telephone Labor Inc Etchant for precision etching of semiconductors
US3634737A (en) * 1969-02-07 1972-01-11 Tokyo Shibaura Electric Co Semiconductor device
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3731861A (en) * 1971-10-28 1973-05-08 Rca Corp Method for dicing materials having a hexagonal crystal structure
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
US3834265A (en) * 1973-02-16 1974-09-10 Gillette Co Ceramic cutting instruments
US4419151A (en) * 1981-03-11 1983-12-06 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Crystal and germanium modification and process for its preparation
US4490441A (en) * 1982-07-06 1984-12-25 Honeywell Inc. Encapsulated CDTe boules for multiblade wafering
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NL213347A (nl)
GB846915A (en) 1960-09-07
NL105904C (nl)
DE1165163B (de) 1964-03-12
FR1179252A (fr) 1959-05-22

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