US2791813A - Apparatus and method for growing crystals having a controlled internal junction structure - Google Patents
Apparatus and method for growing crystals having a controlled internal junction structure Download PDFInfo
- Publication number
- US2791813A US2791813A US465200A US46520054A US2791813A US 2791813 A US2791813 A US 2791813A US 465200 A US465200 A US 465200A US 46520054 A US46520054 A US 46520054A US 2791813 A US2791813 A US 2791813A
- Authority
- US
- United States
- Prior art keywords
- vessel
- crystal
- growth
- melt
- junctures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 title description 53
- 230000012010 growth Effects 0.000 claims description 34
- 239000000155 melt Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000013517 stratification Methods 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 6
- 230000035040 seed growth Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 241000507564 Aplanes Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Definitions
- This invention relates to structure and method to predetermine the internal boundary or juncture definition of a growing crystal and more particularly to the structure of the vessel in which the crystal is grown, in order to create, in respect -to a major-growth axis thereof, symmetrically angled strata ⁇ or laminae, if the composition of the melt grows in arrays of strata or if the melt cornp'osition grows in clusters of discreet orientation, the practice 'of this invention forms at substantially precise planes within the growing crystal, junctures of differently angled growth of the crystal.
- angulated junctures of stratified growth or junctures formed by the differently orientated clusters induced by this invention vwhen using such metallic solutions as those composed of bismuth, antimony and the like, produce multiple energy-junctures within the crystal body, formed in extending repetition along the extent of its growth.
- Each resulting precise seed-growth issuing from its capillary-Cornucopia forms a segment in the main body of. ⁇ the' vessel of its own particular inclination of crystal growth in respect tothe other segments.
- this same angulated juncture-structure takes form along planes of substantially predetermined position within the crystal.
- the crystal, after being grown, is cut in sections, to make these junctures available for use in the electrical arts, the plane of each section so cut being substantially normal to the major axis of the crystals growth.
- the juncture faces of the crystal may be formed according to the teaching of this invention, composed of a single metal or in combination of two or more distinct metals or ⁇ alloys of different composition.
- This invention is an elaboration-of this theme to create a specific crystal structure having innumerable junctures formed by dissimilar angula-ted strata or orientated clus-v ters as and for the purposes set forth, whereas Messrs.
- Figure 1 is a sectional elevation of the invention.
- Figure 2 is a section taken along the line 2-2 in Figure 1.
- Figure 3 is a section taken along the line 3--3 in Figure 1 without any crystal growing melt therein to show the interior contours of the vessel.
- Figure 4 is a sectional view of the resulting crystal growth from a vessel as seen in Figure 1 and indicating Figure 7 is an elevation partially in section of a moditication of the invention to obtain predetermined junctures in a crystal body.
- numeral 1 is the vessel in which ⁇ Numerals.
- 2 and 3 are the radially formed cornucopias with capillary seedings terminals 5 and 6 preferably formed as extending divisions of the base of vessel 1. These extend# ing divisions merge at 4 with vessel l, which is seen ini plan in Figure 3.
- resistance coils 7 and 8 are positioned in series connection, one with the other, through lead wires 9 and 10 leading to electric supply terminals 40 and 41.
- a rheostat, 11, is interposed in lead wire 10.to control the heating effect from coils 2 and 3 in respect to seeding terminals 5 and 6 and the conically formed divisions 2 and 3.
- resistance coils 12, 14 and 16 are in similar heating relation with the main vessel 1 positioned one above the other, each of which being conl trolled as to their heating effect by rheostats 13, 15 and 17 respectively.
- Vessel 1 is lled with a specific melt as previously detned andthe several resistance coils viz.: 7 8, 12, 14 and 16 are energized to bring the melt to or slightly above its particular temperature necessary for a molten state.
- rheostat 11 is now manipulated to reduce the temperature at the initial seed growth capillaries at 5 and 6. Due to the series winding of coils 7 ,and 8, a cooling factor of Patented May 14, 1957 n 3 the same degree can be readily maintained at these divergent points, essential to a coincident starting of the seeding growth thereat.
- Themethod of melting and controlled cooling as describedv for the resistance type is thesame for either type-f Ithas Abeenprovedby actual practice Athat ina conically formed capillaryv terminus of a vessel as above describiedand illustrated ⁇ at and 6 that there is a crowding out of other crystal seeds by the most favorably disposedl or situated seed and that the angulation of this precise surviving seed growth will persist even if the. configuration, or axis of the extending vessel in which the crystal growsforms a SiO-degree arc. The stratification or clusterorientation will not be altered as the crystal proceeds to grow therethrough.
- FIG. 5 a modification of the unitary glass vessel 1 is shown, whereinvessel 1 is composed of two metallic ceramic halves ⁇ respectively, 22 and 23,. with extending anged portions 24 and 25 suitably secured, one to the other.
- the melt 21, when it has crystallized as previously explained, may be easily extracted in toto ,by the parting of; sections 22 and 23.
- the resistance coil as indicated by 25 to maintainthe necessary temperature gradient asit follows the crystal growth is sustained in ceramic insulation 2.” held by supports Z8 and '29. It is evidentl tov those skilled in this art that these supports may achievable up or down along'the axis of vessell in ac cordancc with the desiredshifting Vtemperature gradient so essential to the equalized: crystal growth. ⁇
- Figure 6 is-shown in-plan and partially in; sectiona crystal growing vessel havingrfour distinct seeding ⁇ terminals viz.: 30, 31, 32 and 33, formed by the radially disposed arcuate members 30a, 31a, 32a and 33a, all of equal length, which together form the closure for the base of the circular main vessel, portion 42, shown in section.
- the -respective crystal growths extend under their equal rate of growth'until they arrive into the uni tary circular portion 42 of the vessel whereat they form junctured-segments as indicated by numerals 35, 36, 37 and 38, composed, if the melt forms a stratified growth of dilerently angulated faced junctures or if the melt forms into a series of clusters, create juncture faces of differently orientated crystal clusters.
- this illustrates a modication of. the invention.
- the desired differential of strata or cluster orientation may be produced in members 43 and 44 by positioning a plural seeding of crystals, that is, a small fragment of crystal as seen at numerals 57 and 58, where in by a prior microscopic examination thereof, it has been ascertained that the inclination of the crystal seedingfragf ments are such and such and that the crystal fragmentsl have a cluster orientation or a strata formation.
- a plural seeding of crystals that is, a small fragment of crystal as seen at numerals 57 and 58, where in by a prior microscopic examination thereof, it has been ascertained that the inclination of the crystal seedingfragf ments are such and such and that the crystal fragmentsl have a cluster orientation or a strata formation.
- capillary orifices-45 and 46 in Ythe conical tubular extensions 431 and 44 of vessel 42 by a ⁇ block 47 which, dueto its mass, acts asav chilling agent as well as a physical support for-seedings4 57 and 58, so that the temperature of -seedings 57 and58 is kept below their meltingpoint as when resistance coils 48, 49 and55 initially heat up to a molten state the melt 21 in vessel 42.
- the dot and dash lines 60 and Y61 are the cutting lines normal to the growth of the crystal through which a ⁇ section ofthe crystal is cut.A Whenwires 63and. 64 are secured ,to section 65, so ⁇ cut, and a thermal gradient is present, voltage is generated, as indicated.
- Figs. l, 6, 7 may beusedyfor producingbicrystal see-- tions of distinctlydifferent metals and alloys.; ByA ern.-v ploying a diierentmetal. in the separate-arms and a ture of thetwoselectedmetals in the -tubefor center'section, the melt will on crystallizing cause the mixed metals-- ⁇ tojoin its own type and-.set upa boundaryrlbetweenhthe two growths.A
- the method of growing in a vessel predetermined junctures in a crystal grown from a melt which consists in initiating substantially coincident but separated plural seed-growths of differential stratification in the melt thereof, continually promoting respective seed-growths therefrom by regulated heating to rise into a single compartment of said vessel at substantially equal growth rates whereby the crystal formed in said vessel is composed of component portions of said plurality of coincident but initially separate growths, thereby forming junctures at their respective contacting faces within said crystal.
- the method of growing in a vessel predetermined junctures in a crystal grown from a melt which consists in initiating substantially coincident out separated plural seedings in the melt thereof from a plurality of radially conically formed terminations of said vessel, continually promoting respective surviving seed-growths therefrom by regulated heating to rise into a single compartment of said vessel from said terminations at substantially equal growth rates whereby the crystal formed in said vessel is composed of component portions of said plurality of coincident but initially separate growths, thereby forming junctures at their respective contacting faces.
- An apparatus for growing crystals from a melt comprising a vessel, a plurality of depending substantially conical tubular portions forming in aggregate the closure of the base of said vessel, means to heat said vessel and said extending portions thereof and means to control said heating means and adapted to provide a gradient of temperature along the extent of said apparatus.
- a substantially tubular section comprising one end of said vessel and a plurality of radially and downwardly disposed substantially conically shaped portions forming closures at the opposite end of said vessel, each of said radially disposed tubular portions communicating and opening into said substantially tubular end section.
- a substantially tubular main body section forming the upper part of said vessel and a plurality of curved tubular portions of substantially conical shape communieating with the bottom of said main tubular body portion and with each other and each of said conical tubular portions being closed at its bottom or pointed end.
- a substantially tubular section comprising one end of said vessel, a plurality of radially and downwardly disposed substantially conically shaped portions forming closures at the opposite end of said vessel, each of said radially disposed tubular portions communicating and opening into said substantially tubular end section, means to heat said vessel and said extending portions thereof, and means to control said heating means and adapted to provide a gradient of temperature along the extent of said apparatus.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DENDAT1069389D DE1069389B (de) | 1954-10-28 | Verfahren und Vorrichtung zum Züchten von Einkristallen | |
| BE542375D BE542375A (el) | 1954-10-28 | ||
| US465200A US2791813A (en) | 1954-10-28 | 1954-10-28 | Apparatus and method for growing crystals having a controlled internal junction structure |
| GB30931/55A GB788375A (en) | 1954-10-28 | 1955-10-28 | Improvements in or relating to the control of the internal junction structure of a crystal |
| FR1137851D FR1137851A (fr) | 1954-10-28 | 1955-10-28 | Structure de jonction interne de réglage d'un cristal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US465200A US2791813A (en) | 1954-10-28 | 1954-10-28 | Apparatus and method for growing crystals having a controlled internal junction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2791813A true US2791813A (en) | 1957-05-14 |
Family
ID=23846851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US465200A Expired - Lifetime US2791813A (en) | 1954-10-28 | 1954-10-28 | Apparatus and method for growing crystals having a controlled internal junction structure |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2791813A (el) |
| BE (1) | BE542375A (el) |
| DE (1) | DE1069389B (el) |
| FR (1) | FR1137851A (el) |
| GB (1) | GB788375A (el) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3485289A (en) * | 1966-02-01 | 1969-12-23 | Mitsubishi Chem Ind | Method for the manufacture of aluminum or aluminum alloy castings |
| US3598169A (en) * | 1969-03-13 | 1971-08-10 | United Aircraft Corp | Method and apparatus for casting directionally solidified discs and the like |
| US3738416A (en) * | 1969-03-13 | 1973-06-12 | United Aircraft Corp | Method of making double-oriented single crystal castings |
| US3857436A (en) * | 1973-02-13 | 1974-12-31 | D Petrov | Method and apparatus for manufacturing monocrystalline articles |
| DE2949446A1 (de) * | 1978-12-13 | 1980-06-26 | United Technologies Corp | Verfahren und form fuer epitaxiale erstarrung |
| US4353405A (en) * | 1980-04-18 | 1982-10-12 | Trw Inc. | Casting method |
| US4469160A (en) * | 1981-12-23 | 1984-09-04 | United Technologies Corporation | Single crystal solidification using multiple seeds |
| US5266151A (en) * | 1992-03-04 | 1993-11-30 | Advanced Crystal Products Corporation | Inside edge defined, self-filling (IESF) die for crystal growth |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1256929A (en) * | 1914-05-16 | 1918-02-19 | Otto Schaller | Process of producing metallic wires, filaments, and the like. |
| US1733752A (en) * | 1929-10-29 | Refractory metal and its manufacture | ||
| US1793672A (en) * | 1926-02-16 | 1931-02-24 | Percy W Bridgman | Crystals and their manufacture |
| US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
| US2694024A (en) * | 1950-07-24 | 1954-11-09 | Bell Telephone Labor Inc | Semiconductor bodies for signal translating devices |
-
0
- BE BE542375D patent/BE542375A/xx unknown
- DE DENDAT1069389D patent/DE1069389B/de active Pending
-
1954
- 1954-10-28 US US465200A patent/US2791813A/en not_active Expired - Lifetime
-
1955
- 1955-10-28 GB GB30931/55A patent/GB788375A/en not_active Expired
- 1955-10-28 FR FR1137851D patent/FR1137851A/fr not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1733752A (en) * | 1929-10-29 | Refractory metal and its manufacture | ||
| US1256929A (en) * | 1914-05-16 | 1918-02-19 | Otto Schaller | Process of producing metallic wires, filaments, and the like. |
| US1793672A (en) * | 1926-02-16 | 1931-02-24 | Percy W Bridgman | Crystals and their manufacture |
| US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
| US2694024A (en) * | 1950-07-24 | 1954-11-09 | Bell Telephone Labor Inc | Semiconductor bodies for signal translating devices |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3485289A (en) * | 1966-02-01 | 1969-12-23 | Mitsubishi Chem Ind | Method for the manufacture of aluminum or aluminum alloy castings |
| US3598169A (en) * | 1969-03-13 | 1971-08-10 | United Aircraft Corp | Method and apparatus for casting directionally solidified discs and the like |
| US3738416A (en) * | 1969-03-13 | 1973-06-12 | United Aircraft Corp | Method of making double-oriented single crystal castings |
| US3857436A (en) * | 1973-02-13 | 1974-12-31 | D Petrov | Method and apparatus for manufacturing monocrystalline articles |
| DE2949446A1 (de) * | 1978-12-13 | 1980-06-26 | United Technologies Corp | Verfahren und form fuer epitaxiale erstarrung |
| US4353405A (en) * | 1980-04-18 | 1982-10-12 | Trw Inc. | Casting method |
| US4469160A (en) * | 1981-12-23 | 1984-09-04 | United Technologies Corporation | Single crystal solidification using multiple seeds |
| US5266151A (en) * | 1992-03-04 | 1993-11-30 | Advanced Crystal Products Corporation | Inside edge defined, self-filling (IESF) die for crystal growth |
Also Published As
| Publication number | Publication date |
|---|---|
| GB788375A (en) | 1958-01-02 |
| BE542375A (el) | |
| DE1069389B (de) | 1959-11-19 |
| FR1137851A (fr) | 1957-06-05 |
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