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US2476323A - Multielectrode modulator - Google Patents

Multielectrode modulator Download PDF

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Publication number
US2476323A
US2476323A US27890A US2789048A US2476323A US 2476323 A US2476323 A US 2476323A US 27890 A US27890 A US 27890A US 2789048 A US2789048 A US 2789048A US 2476323 A US2476323 A US 2476323A
Authority
US
United States
Prior art keywords
emitter
electrode
absorber
signal
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US27890A
Other languages
English (en)
Inventor
Alois J Rack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL75792D priority Critical patent/NL75792C/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US27890A priority patent/US2476323A/en
Priority to FR980994D priority patent/FR980994A/fr
Priority to GB12815/49A priority patent/GB694026A/en
Application granted granted Critical
Publication of US2476323A publication Critical patent/US2476323A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • This invention relates to signal translation circuits including semiconductive elements.
  • the general object of the invention is to modulate one electric signal by another.
  • a particular object is to gate or switch one electric signal by another or by a plurality of others.
  • a third electrode termed the control (or base) electrode, which may be a plated metal film, makes low resistance contact with the opposite face, namely, the base of the block.
  • a small bias of' one sign is applied from the control electrode to the emitter and a larger bias of opposite sign is applied to the absorber.
  • the 'body material is of N-type, the emitter is biased positively, the absorber negatively.
  • the signs are reversed.
  • the absorber rectifier contact is operated in its reverse direction. It has been discovered that this circuit element displays remarkable amplification properties in that when a signal to be amplified is applied between the emitter and the control electrode, an amplified replica appears across a load connected in series with the absorber.
  • the device has subsequently come to be known as a transistor.
  • the Bardeen-Brattain application suggests that a plurality of absorber electrodes (termed collector electrodes in that application) may surround the emitter, being connected together, to increase the fraction of emitter current which is collected by them as compared with that which results with a single absorber electrode.
  • This behavior of the multi-emitter unit adapts it to use as a modulator and a time coincidence gate.
  • a carrier voltage for example of sinusoidal wave form
  • a signal to be translated may be applied to one emitter electrode and gating pulses may beapplied to others. As long as the pulse voltage applied to any of these other emitter electrodes exceeds the signal voltage, the signal voltage is not translated.
  • Figs. 3 and 4 are wave form diagrams illustrative of the performance of the apparatus of Fig. 1;
  • Fig. 5 is a schematic circuit diagram of a time coincidence gate embodying the invention.
  • Figs. 6 and 'I are schematic circuit diagrams showing alternatives to Fig. 1. v
  • Fig. 1 is a schematic diagram showing a circuit for translating the voltage of a first signal of frequency 12 and for modulating it by a second signal of frequency q.
  • the frequency q may be that of a voice signal, in the range to 4,000 cycles per second, while the frequency 12 may be that of a carrier, for example, 8,000 cycles per second.
  • the heart of the circuit is a semiconductor unit which may be of the type which forms the subject-matter of the aforesaid Bardeen-Brattain application with the electrode arrangement modified in accordance with the present invention. In brief and as a preferred example, it may be a small block I of germanium prepared in accordance with the teachings of an application of J. H. Scaff and H. C. Theuerer, Serial No. 638,351, filed December 29, 1945, and to one surface 2 of which a sensitizing treatment has been applied, for example, an anodic oxidation process as described and claimed in an application of R. B.
  • Two electrodes, 4, 5 which may be metal points, make rectifier contact with the sensitized surface 2 of the block I, preferably close together. They may be denoted the first emitter electrode and the absorber, respectively.
  • a third electrode, denoted the control electrode, makes low resistance contact with the opposite face of the block I. It may be a plated metal film 8.
  • a signal of frequency p, derived from a signal source I may be applied between the control electrode 8 and the first emitter 4.
  • the output circuit of the device may include a suitable load such as a resistor 8 and a bias battery 9.
  • the bias battery 9 When the body of the block I is of N-type material, the bias battery 9 is poled as shown, with its negative terminal connected by way of the load resistor to the absorber electrode 5.
  • the first emitter electrode 4 should be biased positively by a volt or so with respect to the body of the block. This may be accomplished by the use of a battery, or referably by a self-bias resistor In which may be shunted by a bypass condenser H as described in an application of H. L. Barney and R. C. Mathes, Serial No. 22,854, filed April 23, 1948.
  • an auxiliary emitter electrode 4a is added, which may be structurally similar to the first emitter electrode 4 and makes contact with the block I in similar fashion;
  • the auxiliary emitter 4a may be spaced from the absorber electrode 5 by a distance approximately equal to that which separates the absorber 5 and the first emitter 4.
  • the two emitter electrodes 4, 4a may be equally spaced on either side of the absorber electrode 5.
  • a A suitable voltage, derived from a source I2 is applied between this auxiliary electrode and the control electrode.
  • the surface treatment to which the semiconductor block I has been subjected results in the formation on the surface 2 of a thin layer of P -type material, perhaps 10- centimeters in thickness, separated from the body of the block by a high resistance barrier 3.
  • the first emitter 4 biased positively with respect to the body of the block by a volt or so and the absorber electrode 5 negatively by 40 to 100 volts, the emitter 4 operates in the forward direction and the absorber 5 in the reverse direction.
  • the present invention is based on the discovery that when similar emitter electrodes make contact with the block, substantially equally spaced from the absorber electrode, and signal voltages are applied to them individually, the emitter electrode to which the greater of the two voltages is applied takes full control of the unit, which behaves substantially as though the emitter having the lesser of the two voltages were removed.
  • Fig. 2 shows characteristic curves of the device in which I the absorber current 1.1 is plotted as a function of the voltage E1 applied to the first emitter 4, for various values of the voltage Ez applied to the auxiliary emitter 4a.
  • the unit operates as an approximately linear amplifier of the voltage E1, translating this voltage into an absorber current which is substantially proportional thereto.
  • the absorber current IA now having a value dependent on the voltage E2, but independent of the voltage E1.
  • a sinusoidal voltage E1 of a higher frequency p be applied to the first emitter electrode
  • another sinusoidal voltage E2 of a lower frequency q is applied to the auxiliary emitter electrode
  • the unit will translate the signal of frequency p at times when the first emitter electrode is at a higher potential than the auxiliary emitter electrode and not otherwise.
  • the wave form of the resulting absorber current In is indicated in the figure. This wave form evidently differs from the symmetrical modulated wave which is familiar as the output of a vacuum tube modulator.
  • the unit operates as a modulator.
  • a voltage E1 of a high frequency may be applied to the first emitter electrode 4, while a voltage E2 of lower frequency and square wave form and amplitude exceeding that of the high frequency voltage both on its positive and negative swings may be applied to the auxiliary emitter 4a as indicated in Fig. 4, in which case the resulting output wave form of the absorber current I; is as indicated by the solid curve.
  • This consists of a substantial replica of the signal E1 during intervals in which the voltage E2 applied to the auxiliary emitter 4a is negative, and of a current which is substantially constant in magnitude and proportional to the magnitude of the square wave voltage E2 at other times. .
  • the latter may be rejected by the use of filters or otherwise as desired, in which case the output of the device consists of a current of frequency p which is gated or switched on and off by the square wave Ea.
  • auxiliary electrode may be employed in conjunction with the first emitter electrode.
  • Such a system is useful as a gate circuit in which a signal is to be translated only during the joint temporal coincidence of pulses from two different sources.
  • Fig. 5 shows such a system, in which various elements of simiderived from sources l2, l3, may be applied to the two auxiliary emitters 4a, to. These may be rectangular pulses l4, I! of difierent frequencies or difierent durations or both. From the foregoing description it will be understood that, with the choice of suitable magnitudes for the pulse voltages q1 and qz, the signal p is translated into an absorber current when, and only when the potentials of both of the auxiliary emitter electrodes 4a,
  • Figs. 1 and 5 are analogous to the so-called "grounded grid circuit arrangement which has become well known in connection with triode amplifiers
  • Fig. 6 is analogous to the conventional grounded cathode circuit
  • Fig. '7 is analogous to the conventional grounded anode or cathode follower circuit.
  • elements similar to those of Fig. 1 are designated by similar reference characters.
  • the mean voltages about which the signals 20 and q oscillate may be adjusted to appropriate values by the use of bias batteries l6, l1, l8, 19 as indicated or, if preferred, the resistor condenser combination shown in Figs. 1 and 5 may be employed.
  • the multi-electrode structure of Fig. 5 may also be connected in the alternative circuits of Figs. 6 and 7, if desired.
  • a modulator which comprises a semiconductive body, an absorber electrode making rectifier contact with said body, a control electrode making low resistance contact with said body, at least two additional electrodes making contact with said body, each of said additional electrodes being so biased and disposed with respect to said body as to act as an emitter of electric charges into said body within the influence of said absorber electrode, connections for applying a signal to be modulated to one of said additional electrodes, and connections for applying a modulating signal to another of said additional electrodes.
  • a modulator which comprises a semiconduc-' tive body, an absorber electrode making rectifier contact with said body, at least two additional electrodes making contact with said body, each of said additional electrodes being so biased and disposed with respect to said body as to act as an emitter of electric charges into said body within the influence of said absorber electrode, connections for applying a signal to be modulated between said body and one of said additional electrodes, and connections for applying a modulating signal between said body and another of said additional electrodes.
  • Signal translation apparatus which comprises .a semi-conductive body, an absorber electrode making rectifier contact with said .body, at least two additional electrodes making contact with said body, each of said additional electrodes being so biased and disposed with respect to said body as to act as an emitter of electric charges into said body within the influence of said absorber electrode, connections for applying a Sig.- nal to one of said additional electrodes, and connections for applying gating pulses to another of said additional electrodes.
  • Signal translation apparatus which comprises a semiconductive body. an absorber electrode making rectifier contact with said body, a
  • additional electrodes being so biased as to act as an emitter of electric charges into said body within the influence of said absorber electrode, connections for applying a signal to one of said additional electrodes, and connections for applying gating pulses individually to others of said additional electrodes.
  • Signal translation apparatus which comprises a semi-conductive body, an absorber electrode making rectifier contact with said body, a
  • control electrode making low resistance contact with said body, at least two additional electrodes making contact with said body, each of said additional electrodes being so biased and disposed with respect to said body as to act as an emitter of electric charges into said body within the influence of said absorber electrode, a plurality of separate alternating signal sources of different characteristics, and connections for applying the voltages of said sources individually to said additional electrodes, whereby said additional electrodes take control of the absorber current in a1- ternation.
  • Signal translation apparatus which comprises a semi-conductive body, a control electrode making low resistance contact with said body, at least three additional electrodes making contact with said body, one of said additional electrodes being biased for conduction in the reverse direction, others being biased for conduction in the forward direction, connections for applying a first signal to one of said additional electrodes, and connections for applying a second signal to another of said additional electrodes.
  • a modulator which comprises a semiconductive body, an absorber electrode making rectifier contact with said body, a control electrode making low resistance contact with said body, at least two additional electrodes making contact with said body, each of said additional electrodes being so biased and disposed with respect to said body as to act as an emitter of electric charges into said body within the influence 'of said absorber electrode, connections for applying a signal to be modulated to one of said additional electrodes, and connections for applying a modulating signal to the other of said additional electrodes.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Bipolar Transistors (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Amplifiers (AREA)
US27890A 1948-05-19 1948-05-19 Multielectrode modulator Expired - Lifetime US2476323A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL75792D NL75792C (de) 1948-05-19
US27890A US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator
FR980994D FR980994A (fr) 1948-05-19 1949-02-16 Perfectionnements aux modulateurs
GB12815/49A GB694026A (en) 1948-05-19 1949-05-13 Electric signal translating apparatus utilizing semiconductive elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27890A US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator

Publications (1)

Publication Number Publication Date
US2476323A true US2476323A (en) 1949-07-19

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ID=21840356

Family Applications (1)

Application Number Title Priority Date Filing Date
US27890A Expired - Lifetime US2476323A (en) 1948-05-19 1948-05-19 Multielectrode modulator

Country Status (4)

Country Link
US (1) US2476323A (de)
FR (1) FR980994A (de)
GB (1) GB694026A (de)
NL (1) NL75792C (de)

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US2553490A (en) * 1949-02-21 1951-05-15 Bell Telephone Labor Inc Magnetic control of semiconductor currents
US2560792A (en) * 1948-02-26 1951-07-17 Bell Telephone Labor Inc Electrolytic surface treatment of germanium
US2565497A (en) * 1948-07-23 1951-08-28 Int Standard Electric Corp Circuit, including negative resistance device
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2570978A (en) * 1949-10-11 1951-10-09 Bell Telephone Labor Inc Semiconductor translating device
US2570436A (en) * 1949-09-30 1951-10-09 Rca Corp Crystal controlled oscillator
US2585078A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Negative resistance device utilizing semiconductor amplifier
US2585077A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Control of impedance of semiconductor amplifier circuits
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2595232A (en) * 1949-04-29 1952-05-06 Bell Telephone Labor Inc Telephone switching system employing a transistor
US2595496A (en) * 1949-01-22 1952-05-06 Rca Corp Cascade-connected semiconductor amplifier
US2597028A (en) * 1949-11-30 1952-05-20 Bell Telephone Labor Inc Semiconductor signal translating device
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US2609459A (en) * 1948-12-30 1952-09-02 Rca Corp High input impedance transistor amplifier
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
US2627575A (en) * 1950-02-18 1953-02-03 Bell Telephone Labor Inc Semiconductor translating device
US2629767A (en) * 1949-08-31 1953-02-24 Rca Corp Semiconductor amplifier or oscillator device
US2632146A (en) * 1949-01-13 1953-03-17 Bell Telephone Labor Inc Transistor frequency modulation
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices
US2644914A (en) * 1949-08-17 1953-07-07 Bell Telephone Labor Inc Multicontact semiconductor translating device
US2644925A (en) * 1950-12-29 1953-07-07 Rca Corp Semiconductor amplitude modulation system
US2645683A (en) * 1949-12-17 1953-07-14 Rca Corp Electromechanical transducer
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
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US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
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US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making
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US2663806A (en) * 1952-05-09 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2666150A (en) * 1950-05-04 1954-01-12 Ibm Crystal tetrode
US2666139A (en) * 1949-09-30 1954-01-12 Rca Corp Semiconductor relaxation oscillator
US2672528A (en) * 1949-05-28 1954-03-16 Bell Telephone Labor Inc Semiconductor translating device
US2673948A (en) * 1948-08-13 1954-03-30 Westinghouse Freins & Signaux Crystal device for controlling electric currents by means of a solid semiconductor
US2675474A (en) * 1949-05-14 1954-04-13 Rca Corp Two-terminal sine wave oscillator
US2675433A (en) * 1950-04-27 1954-04-13 Rca Corp Degenerative amplifier
US2676271A (en) * 1952-01-25 1954-04-20 Bell Telephone Labor Inc Transistor gate
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
US2683840A (en) * 1948-10-14 1954-07-13 Westinghouse Freins & Signaux Semiconductor for control purposes
US2691074A (en) * 1949-08-31 1954-10-05 Rca Corp Amplifier having frequency responsive variable gain
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2693568A (en) * 1952-03-05 1954-11-02 Bell Telephone Labor Inc Current and voltage regulation
US2701281A (en) * 1949-04-01 1955-02-01 Int Standard Electric Corp Amplifier employing semiconductor
US2701302A (en) * 1951-03-29 1955-02-01 Rca Corp Semiconductor frequency converter
US2702316A (en) * 1951-02-28 1955-02-15 Rca Corp Signal modulation system
US2702838A (en) * 1951-11-15 1955-02-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2713117A (en) * 1949-06-18 1955-07-12 Sylvania Electric Prod Heterodyne converter
US2713665A (en) * 1950-11-09 1955-07-19 Bell Telephone Labor Inc Transistor modulator circuits
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
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Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560792A (en) * 1948-02-26 1951-07-17 Bell Telephone Labor Inc Electrolytic surface treatment of germanium
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
US2565497A (en) * 1948-07-23 1951-08-28 Int Standard Electric Corp Circuit, including negative resistance device
US2673948A (en) * 1948-08-13 1954-03-30 Westinghouse Freins & Signaux Crystal device for controlling electric currents by means of a solid semiconductor
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2683840A (en) * 1948-10-14 1954-07-13 Westinghouse Freins & Signaux Semiconductor for control purposes
US2655607A (en) * 1948-10-27 1953-10-13 Int Standard Electric Corp Electric delay device employing semiconductors
US2585078A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Negative resistance device utilizing semiconductor amplifier
US2585077A (en) * 1948-11-06 1952-02-12 Bell Telephone Labor Inc Control of impedance of semiconductor amplifier circuits
US2661448A (en) * 1948-12-20 1953-12-01 North American Aviation Inc Transfer resistor and method of making
US2609459A (en) * 1948-12-30 1952-09-02 Rca Corp High input impedance transistor amplifier
US2994838A (en) * 1949-01-04 1961-08-01 Rca Corp Relaxation oscillators
US2632146A (en) * 1949-01-13 1953-03-17 Bell Telephone Labor Inc Transistor frequency modulation
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Also Published As

Publication number Publication date
GB694026A (en) 1953-07-15
NL75792C (de)
FR980994A (fr) 1951-05-21

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