US2376219A - Fabrication of quartz resonators - Google Patents
Fabrication of quartz resonators Download PDFInfo
- Publication number
- US2376219A US2376219A US520139A US52013944A US2376219A US 2376219 A US2376219 A US 2376219A US 520139 A US520139 A US 520139A US 52013944 A US52013944 A US 52013944A US 2376219 A US2376219 A US 2376219A
- Authority
- US
- United States
- Prior art keywords
- etching
- quartz
- frequency
- reagent
- fabrication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 19
- 239000010453 quartz Substances 0.000 title description 12
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000005530 etching Methods 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000003153 chemical reaction reagent Substances 0.000 description 11
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000009850 completed effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241001486234 Sciota Species 0.000 description 1
- 239000012445 acidic reagent Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to the fabrication of quartz crystals for electric oscillators.
- the chemical activity between silica articles being treated and the acid etching reagent is regulated by associating the acid reagent with an effective amount of.
- ammonium biiluoride which. functions as a stabilizer.
- etching efl'ect, or removal of silica from the surface at an article of crystalline silica is rendered uniform indistribution and occurs with a uniform. ratewhich makes it possible to secure a prede termined result. in.-a.given time.
- resonator elements of quartz are fabricated by cutting and rough grinding the'oscillators to approximately a desired order of frequency. for example, to approximately 6000 kilocycles.
- the frequency of piezo-electric oscillation is critically dependent on the thickness of the oscillating dielectric elements. If a slightly higher frequency is desired, careful grinding by highly skilled operators is required until the desired frequency is attained. Chemical reduction in if accurately controllable, permits Application January 28, 1944, Serial No. 520,139
- the flnal accurate adjustment of dimensions of the resonator to obtain exactly a desired frequency may be carried out by a hand-lapping operation.
- the abrasive should be removed by a cleaning operation in an etching reagent. It is also desirable. that oil or grease on the surface, even in the minute amounts derived from the skin when handling blanks, should .be removed-before subjecting the blanks to the etching reagent. This may be done by washing with acetone.
- the clean crystals are subjected for a predetermined period of time at room temperature to the etching bath comprising an aqueous solution of hydrofluoric acid and ammonium acid fluoride (NHiHFz).
- Concentrated hydrofluoric acid is preferred as with weak acid the process is too slow.
- Commercial hydrofluoric acid consisting of an aqueous solution of HF containing about 47 to53 per cent of hydrofluoric acid may be used. It should be saturated with ammonium bifluoride. About '35 grams of the ammonium bifluoride is dissolved in a suflicient amount of 31c commercial acid to produce 100 cc.
- the etching rate of a given reagent may be determined by measuring the frequency of a chosen 35 oscillator plate, exposing it for a. given length of time, for example one minute, to the etching effect of the reagent, and then, after carefully cleaning the plate; again determining the carbons reproducible with time, as is true when using the mixture abovegiven, then a multiple of the unit time will give a predictable incr e of frequency. with a quartz .oscillator crystal oscfl lating at 2500 kc., the etching rate at 25 C. may
- the duration of the treating time will very in accordance with the conditions, such for exnmple as the temperature of the reagent, the amount of material to be removed and the concentration oi the reagent, but in general it may he said that the duration of etching ordinarily will fall within the limits of about ten minutes to one hour. For example, if a frequency of 6030 kc. is desired, a. plate which resonates at 6000 kc.
- - may be exposed to the etching reagent for about ten minutes.
- Quartz oscillator plates or other shaped quartz articles after being treated by contact with o. reagent embodying my invention have u smoot Polished surface.
- the concentration of the solution as etching "proceeds should be restored by approximatemeasures as the .reaction proceeds in quantity production, for example'by introducing anhydrous hydrofluoric acid to replace acid lost by reaction with the silica.
- the method of fabricating resonates crystalline quartz which consists in mcchu shaping said articles to approximate jecting the shaped articles to the diccolvlno tion of an aqueous solution of hydrofluoric and ammonium bifiuoride until u c has been further approximated, sold resonators with sumcient thoroughness to re movev traces of adhering reagent and flnrdiy com plcting mechanically accurate dimensional sizing oi sold resonators.
- the method oi effecting desired change piezo-electrivibration frequency of" crystalline quartz resonator elements which consist-sin immersing said elements in an aqueous solution Suhstairtiully saturated with hydrofluoric-acid and ammonium bii'luoride and having a. substantially constant predetermined chemical activity and removing said elements upon the elapse of o. cal-- culated time interval whereby at desired dimer1- V clonal reduction is attained.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Patented May 15, I
UNITED STATES zsiaz a ra'nmcarron or omiarz RESONATORS Arthur F. Winslow, Scotia, N. Y., assignor to General Electric Company, a corporation of New York I No Drawing.
3 Claims.
The present invention relates to the fabrication of quartz crystals for electric oscillators.
In accordance with one method of fabricating quartz crystal dielectric elements for electric unit of time was not uniform and an undesirable in characteristics results when a batch of oscillator elements of the same size is subjected simultaneously to the same hydrofluoric acid treatment for the same length of time. In other words, the time required to produce a desired increase in vibration frequency cannot accurately be predetermined under such conditions.
In accordance with my invention the chemical activity between silica articles being treated and the acid etching reagent is regulated by associating the acid reagent with an effective amount of.
ammonium biiluoride which. functions as a stabilizer. 1
As a consequence. of my invention the etching efl'ect, or removal of silica from the surface at an article of crystalline silica, is rendered uniform indistribution and occurs with a uniform. ratewhich makes it possible to secure a prede termined result. in.-a.given time. v
In'carrying out my invention resonator elements of quartz are fabricated by cutting and rough grinding the'oscillators to approximately a desired order of frequency. for example, to approximately 6000 kilocycles. As'is well known. the frequency of piezo-electric oscillation is critically dependent on the thickness of the oscillating dielectric elements. If a slightly higher frequency is desired, careful grinding by highly skilled operators is required until the desired frequency is attained. Chemical reduction in if accurately controllable, permits Application January 28, 1944, Serial No. 520,139
further approximation of desired frequency by unskilled labor with greater speed and dependability. However, the flnal accurate adjustment of dimensions of the resonator to obtain exactly a desired frequency may be carried out by a hand-lapping operation.
7 If considerable abrasive from a grinding operation is embedded in the surface of the quartz blanks as a result of the rough grinding, then, preliminary to subjecting the blanks to a timed acid treatment, the abrasive should be removed by a cleaning operation in an etching reagent. It is also desirable. that oil or grease on the surface, even in the minute amounts derived from the skin when handling blanks, should .be removed-before subjecting the blanks to the etching reagent. This may be done by washing with acetone.
. The clean crystals are subjected for a predetermined period of time at room temperature to the etching bath comprising an aqueous solution of hydrofluoric acid and ammonium acid fluoride (NHiHFz). Concentrated hydrofluoric acid is preferred as with weak acid the process is too slow. Commercial hydrofluoric acid consisting of an aqueous solution of HF containing about 47 to53 per cent of hydrofluoric acid may be used. It should be saturated with ammonium bifluoride. About '35 grams of the ammonium bifluoride is dissolved in a suflicient amount of 31c commercial acid to produce 100 cc. of solu- The etching rate of a given reagent may be determined by measuring the frequency of a chosen 35 oscillator plate, exposing it for a. given length of time, for example one minute, to the etching effect of the reagent, and then, after carefully cleaning the plate; again determining the freis reproducible with time, as is true when using the mixture abovegiven, then a multiple of the unit time will give a predictable incr e of frequency. with a quartz .oscillator crystal oscfl lating at 2500 kc., the etching rate at 25 C. may
=5 be produced either by moving the quency of oscillation. When the etching ratebe Like. per minute while an oscillator 0t 4600 kc. may have an etching rate of 1.8 kc.
ing to renew the solution in contact with the surfaces to be dissolved cnclto Torush away gas huhlales. The duration of the treating time will very in accordance with the conditions, such for exnmple as the temperature of the reagent, the amount of material to be removed and the concentration oi the reagent, but in general it may he said that the duration of etching ordinarily will fall within the limits of about ten minutes to one hour. For example, if a frequency of 6030 kc. is desired, a. plate which resonates at 6000 kc.
- may be exposed to the etching reagent for about ten minutes.
As the construction of piezo-electric oscillators containing dielectric elements consisting of thin plates of crystalline quartz ore well'understood in the art, it is not necessary to described them in connection with the present method.
With a predetermined set of conditions for the etching, it is possible by the practice of my invention to predetermine the amount oi materiel removed during a given period and thereby to upproxlmateclosely the frequency desired in the oscillating elements. The amount of skilled hand labor for the dual adjustment oi frequency thus is reduced to u minimum;
Quartz oscillator plates or other shaped quartz articles after being treated by contact with o. reagent embodying my invention have u smoot Polished surface.
The concentration of the solution as etching "proceeds should be restored by approximatemeasures as the .reaction proceeds in quantity production, for example'by introducing anhydrous hydrofluoric acid to replace acid lost by reaction with the silica.
After the etching has been completed, the oscillator element should he very carefully cleaned to remove traces of reagent. It is desirable to rinse first with distilled water, then with a dilute solution of ammonium hydroxide, then to again wash. with water, which preferably should be lilanlrs or icy stirring the solution, the object ice-=- heated, and finally to rinse with acetone. rinsing operation, after the etcc has com pleted, may. he carried out in some case icy h ing the completed elements for about ten mhcu Us in a relatively large quantity of distilled Water.
Careful and thorough cleaning: is desirohle to maintain the acidity or livelinesc of oscillction of the quartz resonators.
What I claim as new and desire to secure by Letters Patent of the United Stotec is:
l. The method of fabricating resonates crystalline quartz which consists in mcchu shaping said articles to approximate jecting the shaped articles to the diccolvlno tion of an aqueous solution of hydrofluoric and ammonium bifiuoride until u c has been further approximated, sold resonators with sumcient thoroughness to re movev traces of adhering reagent and flnrdiy com plcting mechanically accurate dimensional sizing oi sold resonators.
2. The method oi effecting desired change piezo-electrivibration frequency of" crystalline quartz resonator elements which consist-sin immersing said elements in an aqueous solution Suhstairtiully saturated with hydrofluoric-acid and ammonium bii'luoride and having a. substantially constant predetermined chemical activity and removing said elements upon the elapse of o. cal-- culated time interval whereby at desired dimer1- V clonal reduction is attained.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US520139A US2376219A (en) | 1944-01-28 | 1944-01-28 | Fabrication of quartz resonators |
GB2070/45A GB585114A (en) | 1944-01-28 | 1945-01-26 | Improvements in and relating to the manufacture of quartz resonators |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US520139A US2376219A (en) | 1944-01-28 | 1944-01-28 | Fabrication of quartz resonators |
Publications (1)
Publication Number | Publication Date |
---|---|
US2376219A true US2376219A (en) | 1945-05-15 |
Family
ID=24071358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US520139A Expired - Lifetime US2376219A (en) | 1944-01-28 | 1944-01-28 | Fabrication of quartz resonators |
Country Status (2)
Country | Link |
---|---|
US (1) | US2376219A (en) |
GB (1) | GB585114A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2479286A (en) * | 1944-11-21 | 1949-08-16 | Bliley Electric Company | Production of piezoelectric crystals |
US2493461A (en) * | 1944-05-04 | 1950-01-03 | Harvey Wells Communications In | Means and method of forming piezo-electric crystals |
US2617850A (en) * | 1948-06-17 | 1952-11-11 | Carmichael Hugh | Sealed insulator bushing |
US2705392A (en) * | 1952-06-11 | 1955-04-05 | Selectronics Inc | Method of manufacture of piezo electric crystals |
US3059129A (en) * | 1961-03-08 | 1962-10-16 | Collins Radio Co | Pulse forming circuit using momentarily conducting transistor base-emitter leakage current to charge timing capacitor |
US3063881A (en) * | 1956-09-14 | 1962-11-13 | Libbey Owens Ford Glass Co | Method of making an electrically conductive article |
US3107188A (en) * | 1960-11-21 | 1963-10-15 | Pacific Semiconductors Inc | Process of etching semiconductors and etchant solutions used therefor |
US3447217A (en) * | 1964-02-05 | 1969-06-03 | Hitachi Ltd | Method of producing ceramic piezoelectric vibrator |
US4198262A (en) * | 1979-03-29 | 1980-04-15 | Atlantic Richfield Company | Solar cell manufacture |
US4320323A (en) * | 1979-05-01 | 1982-03-16 | U.S. Philips Corporation | Method of improving the heat radiation properties of an X-ray tube rotary anode and a rotary anode thus obtained |
DE10341204A1 (en) * | 2003-09-04 | 2005-03-31 | Daimlerchrysler Ag | holder |
CN116461023A (en) * | 2023-04-18 | 2023-07-21 | 日照皓诚电子科技有限公司 | Intelligent detection method and system for baking and curing of quartz crystal |
-
1944
- 1944-01-28 US US520139A patent/US2376219A/en not_active Expired - Lifetime
-
1945
- 1945-01-26 GB GB2070/45A patent/GB585114A/en not_active Expired
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2493461A (en) * | 1944-05-04 | 1950-01-03 | Harvey Wells Communications In | Means and method of forming piezo-electric crystals |
US2479286A (en) * | 1944-11-21 | 1949-08-16 | Bliley Electric Company | Production of piezoelectric crystals |
US2617850A (en) * | 1948-06-17 | 1952-11-11 | Carmichael Hugh | Sealed insulator bushing |
US2705392A (en) * | 1952-06-11 | 1955-04-05 | Selectronics Inc | Method of manufacture of piezo electric crystals |
US3063881A (en) * | 1956-09-14 | 1962-11-13 | Libbey Owens Ford Glass Co | Method of making an electrically conductive article |
US3107188A (en) * | 1960-11-21 | 1963-10-15 | Pacific Semiconductors Inc | Process of etching semiconductors and etchant solutions used therefor |
US3059129A (en) * | 1961-03-08 | 1962-10-16 | Collins Radio Co | Pulse forming circuit using momentarily conducting transistor base-emitter leakage current to charge timing capacitor |
US3447217A (en) * | 1964-02-05 | 1969-06-03 | Hitachi Ltd | Method of producing ceramic piezoelectric vibrator |
US4198262A (en) * | 1979-03-29 | 1980-04-15 | Atlantic Richfield Company | Solar cell manufacture |
US4320323A (en) * | 1979-05-01 | 1982-03-16 | U.S. Philips Corporation | Method of improving the heat radiation properties of an X-ray tube rotary anode and a rotary anode thus obtained |
DE10341204A1 (en) * | 2003-09-04 | 2005-03-31 | Daimlerchrysler Ag | holder |
CN116461023A (en) * | 2023-04-18 | 2023-07-21 | 日照皓诚电子科技有限公司 | Intelligent detection method and system for baking and curing of quartz crystal |
CN116461023B (en) * | 2023-04-18 | 2023-10-13 | 日照皓诚电子科技有限公司 | Intelligent detection method and system for baking and curing of quartz crystal |
Also Published As
Publication number | Publication date |
---|---|
GB585114A (en) | 1947-01-30 |
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