[go: up one dir, main page]

US2040632A - Photoelectric generator - Google Patents

Photoelectric generator Download PDF

Info

Publication number
US2040632A
US2040632A US359704A US35970429A US2040632A US 2040632 A US2040632 A US 2040632A US 359704 A US359704 A US 359704A US 35970429 A US35970429 A US 35970429A US 2040632 A US2040632 A US 2040632A
Authority
US
United States
Prior art keywords
electrode
light
layer
pervious
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US359704A
Inventor
Schottky Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US2040632A publication Critical patent/US2040632A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18Photovoltaic cells having only Schottky potential barriers
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F1/00Stationary apparatus or hand tools for forming or binding straw, hay or the like into bundles
    • A01F1/02Hand-operated tools
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/07Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/12Technologies relating to agriculture, livestock or agroalimentary industries using renewable energies, e.g. solar water pumping

Definitions

  • My present invention relates to a light-sensitive device adapted to transform variations in light intensity into variations of an electric current.
  • 5 photoelectric generators comprising a layer of cuprous oxide upon copper, this oxide layer having a rectifying effect in connection with the copper, a light-pervious electrode being arranged on the free or exposed surface of the cuprous oxide layer. I'he light passes through this electrode and through the cuprous oxide layer and impinges upon the surface at which the copper is in contact with the cuprous oxide, a photoelectric current being thus produced.
  • the metal or electrode which together with the layer of cuprous oxide or jof other semi-conductor prolight I thus secure the result that the light passing through'such electrode will reach practically undiminished the contact surface between the said metal and the said semi-conductor layer;
  • the layer of semi-conductor may be a layer of cuprous oxide which may be produced upon a copper base or electrode.
  • the copper 35' should be readily pervious to light, that is, it should be produced, by any well known or apf proved method, of such thinness that it will be of glass-clear transparency.
  • the photoelectric cell adapted to receive light quying eiect, is made pervious to from a light source 4 from the left as indicated by the arrows, comprises a metallic conductive electrode 1, of copper, for example, and prefer ably in the form of a thin metal i'oil, which is readily pervious to light, and preferably of glass- 5 clear transparency.
  • this electrode 1 there is applied or produced, for example, a layer 2' of cuprous oxide, so that this semi-conductive layer forms with thev electrode 1 a rectifying connection. l0
  • the electrode 1 preferably is made with a reenforced edge.
  • the light from the light source l passes through the electrode 1 and impinges in practically undiminished force on the contact surface between the electrode and the cuprous 0 oxide layer.
  • a metal conductive electrode 3' is v provided on the other side of the semi-conductor 2.
  • the light-pervious metallic conductive electrode 1 may be provided with grid-like reenforcing ribs 8, whichat the same time cause better conduction of the current lfrom the thin metallic electrode 1.
  • These grid-like reenforcing ribs 8 may be integral with the thin metallic electrode 1.
  • a photo-electric generator comprising two metallic conductive electrodes and a semi-conductor layer located between them, said semiconductor layer being of cuprous oxide, the electrode on the light receiving side of said photoelectric generator being of copper and in intimate contact with substantially all oi' one surface of the semi-conductor and producing a rectifying effect therewith, said electrode being of such thinness as to be pervious to light.
  • a photo-electric generator as claimed in claim 1 in which the light pervious electrode is reenforced by ribs.
  • a photo-electric generator as claimed in claim 1 in which the light pervious electrode is reenforced by grid-like ribs integral with said electrode.

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)

Description

Filed May 1, 1929l .NvENToR Wfl/.Tar scf/a :ff/(rf BY www" ATTORN 'Patented May 12, 1936 PATENT ori-ice 2,040,632 PHOTOELECTRIC GENERATOR Walter Schottky, Berlin-Charlottenburg,
Ger-
many, assignor to Siemens & Halske, Aktiengesellschaft, Siemensstadt,
near Berlin, Germany, a corporation of Germany Application 'May 1, 1929, Serial No. 359,704 In Germany May 2, 1928 3 Claims. (Cl. 13G-89) My present invention relates to a light-sensitive device adapted to transform variations in light intensity into variations of an electric current.. It has been proposed hitherto to construct 5 photoelectric generators comprising a layer of cuprous oxide upon copper, this oxide layer having a rectifying effect in connection with the copper, a light-pervious electrode being arranged on the free or exposed surface of the cuprous oxide layer. I'he light passes through this electrode and through the cuprous oxide layer and impinges upon the surface at which the copper is in contact with the cuprous oxide, a photoelectric current being thus produced. This device of the prior art suffers from the very serious drawback that the cuprous oxide layer absorbs light very strongly, and that in a selective manner with respect to different colors, so that with light of a given intensity the photoelectric current eiect obtainable theoretically is very much impaired in practice.
According to my present invention, the metal or electrode which together with the layer of cuprous oxide or jof other semi-conductor prolight. I thus secure the result that the light passing through'such electrode will reach practically undiminished the contact surface between the said metal and the said semi-conductor layer; the
30 current produced by phctoelectric action will therefore be relatively large.
The layer of semi-conductor may bea layer of cuprous oxide which may be produced upon a copper base or electrode. In this case the copper 35' should be readily pervious to light, that is, it should be produced, by any well known or apf proved method, of such thinness that it will be of glass-clear transparency.
40 Reference is to be had to the accompanying drawing in which the ligure is a sectional view of a photoelectric cell embodying my invention.
For the sake of greater-clearness, the thicknesses of the several elements of the cell have been exaggerated in the drawing.
45 The photoelectric cell, adapted to receive light duces the rectifying eiect, is made pervious to from a light source 4 from the left as indicated by the arrows, comprises a metallic conductive electrode 1, of copper, for example, and prefer ably in the form of a thin metal i'oil, which is readily pervious to light, and preferably of glass- 5 clear transparency.
On this electrode 1 there is applied or produced, for example, a layer 2' of cuprous oxide, so that this semi-conductive layer forms with thev electrode 1 a rectifying connection. l0
The electrode 1 preferably is made with a reenforced edge. The light from the light source l passes through the electrode 1 and impinges in practically undiminished force on the contact surface between the electrode and the cuprous 0 oxide layer. A metal conductive electrode 3' is v provided on the other side of the semi-conductor 2.
The light-pervious metallic conductive electrode 1 may be provided with grid-like reenforcing ribs 8, whichat the same time cause better conduction of the current lfrom the thin metallic electrode 1. These grid-like reenforcing ribs 8 may be integral with the thin metallic electrode 1.
Iclaim:
l. A photo-electric generator comprising two metallic conductive electrodes and a semi-conductor layer located between them, said semiconductor layer being of cuprous oxide, the electrode on the light receiving side of said photoelectric generator being of copper and in intimate contact with substantially all oi' one surface of the semi-conductor and producing a rectifying effect therewith, said electrode being of such thinness as to be pervious to light.
2. A photo-electric generator as claimed in claim 1 in which the light pervious electrode is reenforced by ribs.
3. A photo-electric generator as claimed in claim 1 in which the light pervious electrode is reenforced by grid-like ribs integral with said electrode.
WALTER SCHO'ITKY.' 45
US359704A 1928-05-02 1929-05-01 Photoelectric generator Expired - Lifetime US2040632A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE310874X 1928-05-02

Publications (1)

Publication Number Publication Date
US2040632A true US2040632A (en) 1936-05-12

Family

ID=6126625

Family Applications (1)

Application Number Title Priority Date Filing Date
US359704A Expired - Lifetime US2040632A (en) 1928-05-02 1929-05-01 Photoelectric generator

Country Status (4)

Country Link
US (1) US2040632A (en)
CH (1) CH139030A (en)
FR (1) FR674162A (en)
GB (1) GB310874A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2418516A (en) * 1944-06-06 1947-04-08 Selenium Corp Amplifier
US2416215A (en) * 1944-07-06 1947-02-18 Radio Patents Corp Translation system for blocking layer photovoltaic cells

Also Published As

Publication number Publication date
GB310874A (en) 1930-07-17
CH139030A (en) 1930-03-31
FR674162A (en) 1930-01-24

Similar Documents

Publication Publication Date Title
US2524033A (en) Three-electrode circuit element utilizing semiconductive materials
US3268366A (en) Photo-electric cell
US2015570A (en) Cathode ray photographic apparatus
GB1365714A (en) Thyristor power switching circuits
GB1426539A (en) Multiple chip integrated circuits and method of manufacturing the same
GB988075A (en) Improvements relating to semiconductor circuit assemblies
US2002221A (en) Dry rectifier
US2783418A (en) Metal rectifiers
GB1286834A (en) Metallic contact for semi-conductor devices
US2735919A (en) shower
US2173904A (en) Electrode system of unsymmetrical conductivity
US2040632A (en) Photoelectric generator
GB1355010A (en) Semiconductor rectifier assemblies
US2734102A (en) Jacques i
US2444473A (en) Method of making rectifiers
US2163393A (en) Selenium rectifier having light metal carrier electrodes
US2650258A (en) Semiconductor photosensitive device
US2485589A (en) Selenium rectifier and photocell
US3836988A (en) Semiconductor devices
GB1246468A (en) Electronic assembly
US3274460A (en) Controlled rectifier comprising a resistive plating interconnecting adjacent n and p layers
US1924300A (en) Copper oxide rectifier
US2948816A (en) Solid state image intensifier
US3569796A (en) Integrated circuit contact
ES368134A1 (en) A procedure for the manufacture of semiconductor devices. (Machine-translation by Google Translate, not legally binding)