US20190094896A1 - Power supply device - Google Patents
Power supply device Download PDFInfo
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- US20190094896A1 US20190094896A1 US15/923,124 US201815923124A US2019094896A1 US 20190094896 A1 US20190094896 A1 US 20190094896A1 US 201815923124 A US201815923124 A US 201815923124A US 2019094896 A1 US2019094896 A1 US 2019094896A1
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- 238000001514 detection method Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 29
- 230000000630 rising effect Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000014509 gene expression Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009189 diving Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
- G05F1/595—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
Definitions
- An embodiment of the present invention relates to a power supply device.
- a non-linear control system is used for a power supply device such as a DC-DC converter.
- the non-linear control system is characterized in that the operation frequency fluctuates depending on a power supply voltage while the circuit configuration is simple and the response speed is high.
- FIG. 1 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a first embodiment
- FIG. 2 is a block diagram illustrating the configuration of a current source circuit and a delay circuit
- FIG. 3 shows a waveform chart of an output voltage “Vout” from a switching circuit and a waveform chart of the voltage of a connection terminal “LX”;
- FIG. 4 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a second embodiment
- FIG. 5 is a block diagram illustrating the configuration of a soft start circuit and a calibration circuit
- FIG. 6 shows a rise of a reference voltage “Vref 1 ”.
- FIG. 1 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a first embodiment.
- a power supply device 1 according to the present embodiment includes a switching circuit 10 , a detection circuit 20 , a comparator 30 (a first comparator), a current source circuit 40 , and a delay circuit 50 .
- the switching circuit 10 includes a switching element “Q 1 ”, a switching element “Q 2 ”, and a control circuit 11 .
- the switching element “Q 1 ” is a P-channel MOS (metal oxide semiconductor) transistor.
- the switching element “Q 2 ” is an N-channel MOS transistor.
- the source of the switching element “Q 1 ” is connected to a power supply such as a battery.
- the source of the switching element “Q 2 ” is grounded.
- the drains of the switching elements are connected to a connection terminal “LX” which is an output node of the switching circuit 10 .
- the gates of the switching elements are connected to the control circuit 11 .
- a resistance load “Rload” is externally connected to the connection terminal “LX” via an inductor “L 0 ”.
- a capacitor “C 0 ” is externally connected between the inductor “L 0 ” and the resistance load “Rload”.
- the control circuit 11 turns on the switching elements alternately. Accordingly, a power supply voltage “Vbat” is subjected to switching control and is outputted through the connection terminal “LX”. This voltage is supplied to the resistance load “Rload” via the inductor “L 0 ”.
- the detection circuit 20 includes a resistance element “R 1 ” and a resistance element “R 2 ” which are connected in series. By using the resistance element “R 1 ” and the resistance element “R 2 ”, the detection circuit 20 divides an output voltage “Vout” from the switching circuit 10 , that is, a voltage supplied from the resistance load “Rload”. As a detected voltage, the divided voltage is inputted to the comparator 30 .
- the comparator 30 compares the voltage detected by the detection circuit 20 with a reference voltage “Vref 1 ” (a first reference voltage) which is set in advance.
- the current source circuit 40 outputs a bias current “Ibias” to the delay circuit 50 .
- the delay circuit 50 outputs a delay time to the control circuit 11 by using the bias current “Ibias” in accordance with the result of comparison performed by the comparator 30 .
- the configuration of the current source circuit 40 and the delay circuit 50 is described with reference to FIG. 2 .
- FIG. 2 is a block diagram illustrating the configuration of the current source circuit 40 and the delay circuit 50 . First, a description of the current source circuit 40 is given.
- the current source circuit 40 includes a voltage division circuit 41 , an operational amplifier 42 , a current mirror circuit 43 , and a resistance element “Resx”.
- the voltage division circuit 41 includes a resistance element “R 3 ” and a resistance element “R 4 ” which are connected in series.
- the voltage division circuit 41 divides the power supply voltage “Vbat” by using the resistance element “R 3 ” and the resistance element “R 4 ”.
- the operational amplifier 42 amplifies the difference between an output voltage from the voltage division circuit 41 and a voltage applied to both ends of the resistance element “Resx”, and outputs the resultant voltage to each of the gates of transistor “Q 3 ” and the transistor “Q 4 ” of the current mirror circuit 43 .
- Each of the transistor “Q 3 ” and the transistor “Q 4 ” is a P-channel MOS transistor, for example.
- the gates of the transistors are connected to an output terminal of the operational amplifier 42 .
- Each of the potentials of the sources of the transistors is the power supply voltage “Vbat”.
- the drain of the transistor “Q 3 ” is grounded via the resistance element “Resx”. Since the inputs of the operational amplifier 42 are in a virtual short, a voltage obtained by diving the power supply voltage “Vbat” is applied to the drain of the transistor “Q” 3 .
- the drain of the transistor “Q 4 ” is connected to the delay circuit 50 .
- the operational amplifier 42 operates such that the output voltage from the voltage division circuit 41 and the voltage applied to both ends of the resistance element “Resx” are equal to each other (are in an equilibrium state), and the transistor “Q 3 ” and the transistor “Q 4 ” perform analog operation in the saturation region. During this operation, a current is caused to flow through the transistor “Q 3 ”, and is mirrored to the transistor “Q 4 ”. As a result, a current flowing through the transistor “Q 4 ” is supplied as the bias current “Ibias” to the delay circuit 50 .
- the value of the bias current “Ibias” depends on the resistance element “Resx”. Therefore, the resistance element “Resx” serves as a current setting element for setting the value of the bias current “Ibias”.
- the delay circuit 50 includes an inverter circuit 51 , an adjustment circuit 52 , and a capacitor “C 1 ”.
- the inverter circuit 51 includes a transistor “Q 5 ” and a transistor “Q 6 ”.
- the transistor “Q 5 ” is a P-channel MOS transistor.
- the transistor “Q 6 ” is an N-channel MOS transistor.
- the gates of the transistors are connected to an output terminal of the comparator 30 .
- the drains of the transistors are connected to each other.
- the source of the transistor “Q 5 ” is connected to the drain of the transistor “Q 4 ” of the current source circuit 40 .
- the source of the transistor “Q 6 ” is grounded.
- One end of the capacitor “C 1 ” is connected to the drains of the transistors “Q 5 ”, “Q 6 ”, that is, the output side of the inverter circuit 51 .
- the other end of the capacitor “C 1 ” is grounded.
- the capacitor “C 1 ” is changed with the bias current “Ibias” supplied from the current source circuit 40 .
- the adjustment circuit 52 includes a comparator 53 (a second comparator) and an OR circuit 54 .
- the comparator 53 compares the charged voltage in the capacitor “C 1 ” with a reference voltage “Vref 2 ” (a second reference voltage) which is set in advance.
- the output level of the OR circuit 54 is switched in accordance with the result of comparison performed by the comparator 53 . For example, when the charged voltage in the capacitor “C 1 ” is lower than the reference voltage “Vref 2 ”, the output level of the OR circuit 54 is high.
- the delay circuit 50 charging of the capacitor “C 1 ” is started when the transistor “Q 5 ” is turned on and the transistor “Q 6 ” is turned off. Thereafter, a time taken for the charged voltage in the capacitor “C 1 ” to be increased to the reference voltage “Vref 2 ” is outputted as a delay time from the OR circuit 54 .
- the delay time can be adjusted by variation of the value of the reference voltage “Vref 2 ”.
- FIG. 3 shows a waveform chart of the output voltage “Vout” from the switching circuit 10 and a waveform chart of the voltage of the connection terminal “LX”.
- Vth a threshold voltage
- the delay circuit 50 outputs a delay time “Ton” to the control circuit 11 .
- the control circuit 11 keeps the switching element “Q 1 ” on and keeps the switching element “Q 2 ” off. As a result, the voltage level of the connection terminal “LX” becomes high and the output voltage “Vout” is increased.
- the control circuit 11 After the delay time “Ton” has elapsed, the control circuit 11 turns off the switching element “Q 1 ” and turns on the switching element “Q 2 ”. As a result, the voltage of the connection terminal “LX” becomes low and the output voltage “Vout” is decreased. In this way, increase and decrease of the output voltage “Vout” are repeated.
- a time “T” between the peak voltages of the output voltage “Vout” corresponds to the operation cycle of the switching circuit 10 . That is, the inverse of the time “T” corresponds to the operation frequency “F” of the switching circuit 10 .
- the operation frequency “F” is expressed by the following expression (1) using the power supply voltage “Vbat”, the output voltage “Vout”, and the delay time “Ton”.
- the delay time “Ton” is expressed by the following expression (2) using the reference voltage “Vref 2 ”, the capacitor “C 1 ”, and the bias current “Ibias”.
- Ton Vref ⁇ ⁇ 2 ⁇ C ⁇ ⁇ 1 Ibias ( 2 )
- the output voltage “Vout” is controlled to be constant. Therefore, the output voltage “Vout”, the reference voltage “Vref 2 ”, and the capacitor “C 1 ” are constant in the expression (3). If the bias current “Ibias” is constant, the delay time “Ton” is fixed so that the operation frequency “F” depends on the power supply voltage “Vbat”. In this case, when the power supply voltage “Vbat” fluctuates, the operation frequency “F” follows the voltage fluctuation.
- the bias current “Ibias” is defined by the following expression (4) using a voltage division ratio a at the voltage division circuit 41 , the power supply voltage
- Ibias ⁇ ⁇ Vbat Re ⁇ ⁇ sx ( 4 )
- the expression (5) does not include the power supply voltage “Vbat”. Accordingly, the operation frequency “F” is free from an influence of the power supply voltage “Vbat”.
- the bias current “Ibias” has correlation with the power supply voltage “Vbat” in the current source circuit 40 . Consequently, any influence of the power supply voltage “Vbat” is eliminated from the operation frequency “F” of the switching circuit 10 so that fluctuation of the operation frequency “F” can be suppressed.
- FIG. 4 is a block diagram illustrating the schematic circuit configuration of a power supply device according to the second embodiment. Components identical to those of the power supply device 1 illustrated in FIG. 1 are denoted by the same reference numbers and a detailed explanation thereof is omitted.
- a power supply device 2 includes a soft start circuit 60 and a calibration circuit 70 in addition to the aforementioned components of the power supply device 1 .
- the soft start circuit 60 controls a rising time of the reference voltage “Vref 1 ” that is inputted to the comparator 30 .
- the calibration circuit 70 calibrates the bias current “Ibias” in accordance with the rising time of the reference voltage “Vref 1 ”.
- FIG. 5 is a block diagram illustrating the configuration of the soft start circuit 60 and the calibration circuit 70 . First, a description of the soft start circuit 60 is given.
- the soft start circuit 60 includes an operational amplifier 61 , a current mirror circuit 62 , a comparator 63 , an OR circuit 64 , a switch 65 , a resistance element R 5 , a capacitor “C 2 ”, and a transistor “Q 9 ”.
- the operational amplifier 61 amplifies the difference between a voltage applied to both ends of the resistance element “R 5 ” and a reference voltage “Vref 3 ” which is set in advance, and outputs the resultant voltage to each of the gates of a transistor “Q 7 ” and a transistor “Q 8 ” of the current mirror circuit 62 .
- the reference voltage “Vref 3 ” can be set to 1.2 V, for example.
- Each of the transistor “Q 7 ” and the transistor “Q 8 ” is a P-channel MOS transistor, for example.
- the gates of the transistors are connected to an output terminal of the operational amplifier 61 .
- Each of the potentials of the sources of the transistors is the power supply voltage “Vbat”.
- the drain of the transistor “Q 7 ” is grounded via the resistance element R 5 .
- the drain of the transistor “Q 8 ” is grounded via the capacitor “C 2 ”.
- the transistor “Q 9 ” is connected in parallel with the capacitor “C 2 ”.
- the transistor “Q 9 ” is an N-channel MOS transistor which operates under the control by the calibration circuit 70 .
- the operational amplifier 61 operates such that the reference voltage “Vref 3 ” and the voltage applied to both ends of the resistance element R 5 are equal to each other (are in an equilibrium state), and the transistors “Q 7 ”, “Q 8 ” perform analog operation in the saturation region.
- a current (“Vref 3 ”/“R 5 ”) is caused to flow through the transistor “Q 7 ”, and is mirrored to the transistor “Q 8 ”.
- the transistor “Q 9 ” is off.
- the capacitor “C 2 ” is charged with the current flowing through the transistor “Q 8 ”.
- the value of a current to be charged in the capacitor “C 2 ” can be set through the resistance element “R 5 ”.
- the comparator 63 By the comparator 63 , the charged voltage in the capacitor “C 2 ” is compared with a steady-state voltage “Vs” which is set in advance.
- the steady-state voltage “Vs” can be set to 1 V, for example.
- the output level of the OR circuit 64 is switched according to the result of comparison performed by the comparator 63 . According to switching of the output level, the switch 65 is also switched.
- FIG. 6 shows a rise of the reference voltage “Vref 1 ”.
- an output signal So from the comparator 63 is in a low level.
- the capacitor “C 2 ” and the comparator 30 are connected to each other by the switch 65 . Accordingly, a rising time “Tr” of the reference voltage “Vref 1 ” corresponds to a charge time of the capacitor “C 2 ”.
- the rising time “Tr” can be set to 100 for example.
- the operation frequency “F” of the switching circuit 10 depends on the resistance elements “Resx” of the current source circuit 40 and the capacitor “C 1 ” of the delay circuit 50 .
- the bias current “Ibias” depends on the resistance elements “Resx”. Therefore, the electric characteristics of the resistance elements “Resx” and the capacitor “C 1 ” have an influence on the operation frequency “F” and the bias current “Ibias”, but these electric characteristics may vary depending on the manufacturing steps or the usage environment.
- the calibration circuit 70 calibrates the resistance elements “Resx” by using an element of the soft start circuit 60 which is formed on the same semiconductor chip on which the current source circuit 40 and the delay circuit 50 are formed. A description of the calibration circuit 70 is given below.
- the calibration circuit 70 includes an oscillator 71 , a counter 72 , a decoder 73 , and an inverter “INV”.
- the oscillator 71 outputs a clock signal “ck” to the counter 72 and the decoder 73 . Accordingly, the counter 72 and the decoder 73 can be synchronized with each other.
- the counter 72 When receiving a start signal for indicating a counting start from the outside, the counter 72 resets a measurement value. Further, the start signal is inverted by the inverter “INV” and inputted to the gate of the transistor “Q 9 ” of the soft start circuit 60 . As a result, the transistor “Q 9 ” is turned off and charging of the capacitor “C 2 ” is started. During the increase of the voltage of the capacitor “C 2 ”, the counter 72 measures a time by using the output signal So from the comparator 63 of the soft start circuit 60 .
- the level of the output signal So is switched. This stops the counter 72 performing the measurement.
- the result of measurement performed by the counter 72 is inputted to the decoder 73 .
- the result of measurement corresponds to a time taken to charge the capacitor “C 2 ” to the steady-state voltage “Vs”, that is, the rising time “Tr” of the reference voltage “Vref 1 ”.
- the decoder 73 decodes the result of measurement performed by the counter 72 , to a control signal for adjusting the bias current “Ibias”.
- the control signal is inputted to the current source circuit 40 .
- the decoder 73 may be provided with a flip-flop for temporarily storing the result of measurement performed by the counter 72 .
- a plurality of the resistance elements “Resx” are connected in series, as illustrated in FIG. 5 . Further, respective transistors “Q 10 ” are connected in parallel with the resistance elements “Resx”.
- the transistors “Q 10 ” are N-channel MOS transistors. The transistors “Q 10 ” are turned on or off according to the control signal inputted from the decoder 73 .
- bias current “Ibias” becomes small.
- the bias current “Ibias” becomes large.
- the bias current “Ibias” can be calibrated by such control of the transistors “Q 10 ” with the control signal
- the bias current “Ibias” is calibrated by the calibration circuit 70 . Accordingly, fluctuation of the operation frequency “F” can be further suppressed.
- the calibration circuit 70 of the present embodiment is realized so as to have a relatively simple configuration. Therefore, upsizing of the device can be suppressed.
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Abstract
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2017-185336, filed on Sep. 26, 2017; the entire contents of which are incorporated herein by reference.
- An embodiment of the present invention relates to a power supply device.
- For example, a non-linear control system is used for a power supply device such as a DC-DC converter. The non-linear control system is characterized in that the operation frequency fluctuates depending on a power supply voltage while the circuit configuration is simple and the response speed is high.
-
FIG. 1 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a first embodiment; -
FIG. 2 is a block diagram illustrating the configuration of a current source circuit and a delay circuit; -
FIG. 3 shows a waveform chart of an output voltage “Vout” from a switching circuit and a waveform chart of the voltage of a connection terminal “LX”; -
FIG. 4 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a second embodiment; -
FIG. 5 is a block diagram illustrating the configuration of a soft start circuit and a calibration circuit; and -
FIG. 6 shows a rise of a reference voltage “Vref1”. - Embodiments will now be explained with reference to the accompanying drawings. The present invention is not limited to the embodiments.
-
FIG. 1 is a block diagram illustrating the schematic circuit configuration of a power supply device according to a first embodiment. As illustrated inFIG. 1 , apower supply device 1 according to the present embodiment includes aswitching circuit 10, adetection circuit 20, a comparator 30 (a first comparator), acurrent source circuit 40, and adelay circuit 50. - The
switching circuit 10 includes a switching element “Q1”, a switching element “Q2”, and acontrol circuit 11. The switching element “Q1” is a P-channel MOS (metal oxide semiconductor) transistor. The switching element “Q2” is an N-channel MOS transistor. - The source of the switching element “Q1” is connected to a power supply such as a battery. The source of the switching element “Q2” is grounded. The drains of the switching elements are connected to a connection terminal “LX” which is an output node of the
switching circuit 10. The gates of the switching elements are connected to thecontrol circuit 11. A resistance load “Rload” is externally connected to the connection terminal “LX” via an inductor “L0”. A capacitor “C0” is externally connected between the inductor “L0” and the resistance load “Rload”. - In the
switching circuit 10, thecontrol circuit 11 turns on the switching elements alternately. Accordingly, a power supply voltage “Vbat” is subjected to switching control and is outputted through the connection terminal “LX”. This voltage is supplied to the resistance load “Rload” via the inductor “L0”. - The
detection circuit 20 includes a resistance element “R1” and a resistance element “R2” which are connected in series. By using the resistance element “R1” and the resistance element “R2”, thedetection circuit 20 divides an output voltage “Vout” from theswitching circuit 10, that is, a voltage supplied from the resistance load “Rload”. As a detected voltage, the divided voltage is inputted to thecomparator 30. - The
comparator 30 compares the voltage detected by thedetection circuit 20 with a reference voltage “Vref1” (a first reference voltage) which is set in advance. Thecurrent source circuit 40 outputs a bias current “Ibias” to thedelay circuit 50. Thedelay circuit 50 outputs a delay time to thecontrol circuit 11 by using the bias current “Ibias” in accordance with the result of comparison performed by thecomparator 30. Here, the configuration of thecurrent source circuit 40 and thedelay circuit 50 is described with reference toFIG. 2 . -
FIG. 2 is a block diagram illustrating the configuration of thecurrent source circuit 40 and thedelay circuit 50. First, a description of thecurrent source circuit 40 is given. - The
current source circuit 40 includes avoltage division circuit 41, anoperational amplifier 42, acurrent mirror circuit 43, and a resistance element “Resx”. Thevoltage division circuit 41 includes a resistance element “R3” and a resistance element “R4” which are connected in series. Thevoltage division circuit 41 divides the power supply voltage “Vbat” by using the resistance element “R3” and the resistance element “R4”. - The
operational amplifier 42 amplifies the difference between an output voltage from thevoltage division circuit 41 and a voltage applied to both ends of the resistance element “Resx”, and outputs the resultant voltage to each of the gates of transistor “Q3” and the transistor “Q4” of thecurrent mirror circuit 43. Each of the transistor “Q3” and the transistor “Q4” is a P-channel MOS transistor, for example. - The gates of the transistors are connected to an output terminal of the
operational amplifier 42. Each of the potentials of the sources of the transistors is the power supply voltage “Vbat”. The drain of the transistor “Q3” is grounded via the resistance element “Resx”. Since the inputs of theoperational amplifier 42 are in a virtual short, a voltage obtained by diving the power supply voltage “Vbat” is applied to the drain of the transistor “Q”3. The drain of the transistor “Q4” is connected to thedelay circuit 50. - The
operational amplifier 42 operates such that the output voltage from thevoltage division circuit 41 and the voltage applied to both ends of the resistance element “Resx” are equal to each other (are in an equilibrium state), and the transistor “Q3” and the transistor “Q4” perform analog operation in the saturation region. During this operation, a current is caused to flow through the transistor “Q3”, and is mirrored to the transistor “Q4”. As a result, a current flowing through the transistor “Q4” is supplied as the bias current “Ibias” to thedelay circuit 50. The value of the bias current “Ibias” depends on the resistance element “Resx”. Therefore, the resistance element “Resx” serves as a current setting element for setting the value of the bias current “Ibias”. - Next, a description of the
delay circuit 50 is given. Thedelay circuit 50 includes aninverter circuit 51, anadjustment circuit 52, and a capacitor “C1”. Theinverter circuit 51 includes a transistor “Q5” and a transistor “Q6”. The transistor “Q5” is a P-channel MOS transistor. The transistor “Q6” is an N-channel MOS transistor. - The gates of the transistors are connected to an output terminal of the
comparator 30. The drains of the transistors are connected to each other. The source of the transistor “Q5” is connected to the drain of the transistor “Q4” of thecurrent source circuit 40. The source of the transistor “Q6” is grounded. - One end of the capacitor “C1” is connected to the drains of the transistors “Q5”, “Q6”, that is, the output side of the
inverter circuit 51. The other end of the capacitor “C1” is grounded. The capacitor “C1” is changed with the bias current “Ibias” supplied from thecurrent source circuit 40. - The
adjustment circuit 52 includes a comparator 53 (a second comparator) and anOR circuit 54. Thecomparator 53 compares the charged voltage in the capacitor “C1” with a reference voltage “Vref2” (a second reference voltage) which is set in advance. The output level of theOR circuit 54 is switched in accordance with the result of comparison performed by thecomparator 53. For example, when the charged voltage in the capacitor “C1” is lower than the reference voltage “Vref2”, the output level of theOR circuit 54 is high. - In the
delay circuit 50, charging of the capacitor “C1” is started when the transistor “Q5” is turned on and the transistor “Q6” is turned off. Thereafter, a time taken for the charged voltage in the capacitor “C1” to be increased to the reference voltage “Vref2” is outputted as a delay time from theOR circuit 54. The delay time can be adjusted by variation of the value of the reference voltage “Vref2”. -
FIG. 3 shows a waveform chart of the output voltage “Vout” from the switchingcircuit 10 and a waveform chart of the voltage of the connection terminal “LX”. As shown inFIG. 3 , when the output voltage “Vout” becomes lower than a threshold voltage Vth (=“Vref1”×(“R1”+“R2”)/“R2”), thedelay circuit 50 outputs a delay time “Ton” to thecontrol circuit 11. - Until the delay time “Ton” has elapsed, the
control circuit 11 keeps the switching element “Q1” on and keeps the switching element “Q2” off. As a result, the voltage level of the connection terminal “LX” becomes high and the output voltage “Vout” is increased. - After the delay time “Ton” has elapsed, the
control circuit 11 turns off the switching element “Q1” and turns on the switching element “Q2”. As a result, the voltage of the connection terminal “LX” becomes low and the output voltage “Vout” is decreased. In this way, increase and decrease of the output voltage “Vout” are repeated. - In
FIG. 3 , a time “T” between the peak voltages of the output voltage “Vout” corresponds to the operation cycle of the switchingcircuit 10. That is, the inverse of the time “T” corresponds to the operation frequency “F” of the switchingcircuit 10. The operation frequency “F” is expressed by the following expression (1) using the power supply voltage “Vbat”, the output voltage “Vout”, and the delay time “Ton”. -
- The delay time “Ton” is expressed by the following expression (2) using the reference voltage “Vref2”, the capacitor “C1”, and the bias current “Ibias”.
-
- When the expression (2) is substituted into the expression (1), the operation frequency “F” is expressed by the following expression (3).
-
- In the
power supply device 1, the output voltage “Vout” is controlled to be constant. Therefore, the output voltage “Vout”, the reference voltage “Vref2”, and the capacitor “C1” are constant in the expression (3). If the bias current “Ibias” is constant, the delay time “Ton” is fixed so that the operation frequency “F” depends on the power supply voltage “Vbat”. In this case, when the power supply voltage “Vbat” fluctuates, the operation frequency “F” follows the voltage fluctuation. - When the
power supply device 1 is used for a wireless communication apparatus, for example, fluctuation of the operation frequency “F” may have an influence on noise, etc. Therefore, in this use, fluctuation of the operation frequency “F” is desired to be suppressed. - Thus, in the present embodiment, the bias current “Ibias” is defined by the following expression (4) using a voltage division ratio a at the
voltage division circuit 41, the power supply voltage - “Vbat”, and the resistance element “Resx”.
-
- When the expression (4) is substituted into the expression (3), the operation frequency “F” is expressed by the following expression (5).
-
- The expression (5) does not include the power supply voltage “Vbat”. Accordingly, the operation frequency “F” is free from an influence of the power supply voltage “Vbat”.
- According to the present embodiment having been described above, the bias current “Ibias” has correlation with the power supply voltage “Vbat” in the
current source circuit 40. Consequently, any influence of the power supply voltage “Vbat” is eliminated from the operation frequency “F” of the switchingcircuit 10 so that fluctuation of the operation frequency “F” can be suppressed. - Hereinafter, a second embodiment is described.
FIG. 4 is a block diagram illustrating the schematic circuit configuration of a power supply device according to the second embodiment. Components identical to those of thepower supply device 1 illustrated inFIG. 1 are denoted by the same reference numbers and a detailed explanation thereof is omitted. - A
power supply device 2 according to the present embodiment includes asoft start circuit 60 and acalibration circuit 70 in addition to the aforementioned components of thepower supply device 1. Thesoft start circuit 60 controls a rising time of the reference voltage “Vref1” that is inputted to thecomparator 30. Thecalibration circuit 70 calibrates the bias current “Ibias” in accordance with the rising time of the reference voltage “Vref1”. -
FIG. 5 is a block diagram illustrating the configuration of thesoft start circuit 60 and thecalibration circuit 70. First, a description of thesoft start circuit 60 is given. - The
soft start circuit 60 includes anoperational amplifier 61, acurrent mirror circuit 62, acomparator 63, an ORcircuit 64, aswitch 65, a resistance element R5, a capacitor “C2”, and a transistor “Q9”. - The
operational amplifier 61 amplifies the difference between a voltage applied to both ends of the resistance element “R5” and a reference voltage “Vref3” which is set in advance, and outputs the resultant voltage to each of the gates of a transistor “Q7” and a transistor “Q8” of thecurrent mirror circuit 62. The reference voltage “Vref3” can be set to 1.2 V, for example. Each of the transistor “Q7” and the transistor “Q8” is a P-channel MOS transistor, for example. - The gates of the transistors are connected to an output terminal of the
operational amplifier 61. Each of the potentials of the sources of the transistors is the power supply voltage “Vbat”. The drain of the transistor “Q7” is grounded via the resistance element R5. The drain of the transistor “Q8” is grounded via the capacitor “C2”. - The transistor “Q9” is connected in parallel with the capacitor “C2”. The transistor “Q9” is an N-channel MOS transistor which operates under the control by the
calibration circuit 70. - The
operational amplifier 61 operates such that the reference voltage “Vref3” and the voltage applied to both ends of the resistance element R5 are equal to each other (are in an equilibrium state), and the transistors “Q7”, “Q8” perform analog operation in the saturation region. During this operation, a current (“Vref3”/“R5”) is caused to flow through the transistor “Q7”, and is mirrored to the transistor “Q8”. Further, the transistor “Q9” is off. As a result, the capacitor “C2” is charged with the current flowing through the transistor “Q8”. The value of a current to be charged in the capacitor “C2” can be set through the resistance element “R5”. - By the
comparator 63, the charged voltage in the capacitor “C2” is compared with a steady-state voltage “Vs” which is set in advance. The steady-state voltage “Vs” can be set to 1 V, for example. The output level of theOR circuit 64 is switched according to the result of comparison performed by thecomparator 63. According to switching of the output level, theswitch 65 is also switched. -
FIG. 6 shows a rise of the reference voltage “Vref1”. Until the capacitor “C2” is charged to the steady-state voltage “Vs”, an output signal So from thecomparator 63 is in a low level. Here, the capacitor “C2” and thecomparator 30 are connected to each other by theswitch 65. Accordingly, a rising time “Tr” of the reference voltage “Vref1” corresponds to a charge time of the capacitor “C2”. The rising time “Tr” can be set to 100 for example. - When the capacitor “C2” is charged to the steady-state voltage “Vs”, the output signal So from the
comparator 63 is switched from the low level to the high level. Consequently, the output level of theOR circuit 64 is also switched so that theswitch 65 is switched as illustrated inFIG. 5 . As a result, the reference voltage “Vref1” is kept at the steady-state voltage “Vs”. Rush current can be avoided by such a slow rise of the reference voltage “Vref1” at thesoft start circuit 60. - As shown in expressions (3) to (5) having been described in the first embodiment, the operation frequency “F” of the switching
circuit 10 depends on the resistance elements “Resx” of thecurrent source circuit 40 and the capacitor “C1” of thedelay circuit 50. Also, the bias current “Ibias” depends on the resistance elements “Resx”. Therefore, the electric characteristics of the resistance elements “Resx” and the capacitor “C1” have an influence on the operation frequency “F” and the bias current “Ibias”, but these electric characteristics may vary depending on the manufacturing steps or the usage environment. - For this reason, in the present embodiment, the
calibration circuit 70 calibrates the resistance elements “Resx” by using an element of thesoft start circuit 60 which is formed on the same semiconductor chip on which thecurrent source circuit 40 and thedelay circuit 50 are formed. A description of thecalibration circuit 70 is given below. - As illustrated in
FIG. 5 , thecalibration circuit 70 includes anoscillator 71, acounter 72, adecoder 73, and an inverter “INV”. Theoscillator 71 outputs a clock signal “ck” to thecounter 72 and thedecoder 73. Accordingly, thecounter 72 and thedecoder 73 can be synchronized with each other. - When receiving a start signal for indicating a counting start from the outside, the
counter 72 resets a measurement value. Further, the start signal is inverted by the inverter “INV” and inputted to the gate of the transistor “Q9” of thesoft start circuit 60. As a result, the transistor “Q9” is turned off and charging of the capacitor “C2” is started. During the increase of the voltage of the capacitor “C2”, thecounter 72 measures a time by using the output signal So from thecomparator 63 of thesoft start circuit 60. - When the voltage of the capacitor “C2” has been increased to the steady-state voltage “Vs”, the level of the output signal So is switched. This stops the
counter 72 performing the measurement. The result of measurement performed by thecounter 72 is inputted to thedecoder 73. The result of measurement corresponds to a time taken to charge the capacitor “C2” to the steady-state voltage “Vs”, that is, the rising time “Tr” of the reference voltage “Vref1”. - The
decoder 73 decodes the result of measurement performed by thecounter 72, to a control signal for adjusting the bias current “Ibias”. The control signal is inputted to thecurrent source circuit 40. Note that thedecoder 73 may be provided with a flip-flop for temporarily storing the result of measurement performed by thecounter 72. - In the
current source circuit 40 of the present embodiment, a plurality of the resistance elements “Resx” are connected in series, as illustrated inFIG. 5 . Further, respective transistors “Q10” are connected in parallel with the resistance elements “Resx”. The transistors “Q10” are N-channel MOS transistors. The transistors “Q10” are turned on or off according to the control signal inputted from thedecoder 73. - When the number of the transistors “Q10” in an off state is increased, the entire resistance value of the resistance elements “Resx” becomes great. As a result, the bias current “Ibias” becomes small. In contrast, when the number of the transistors “Q10” in an on state is increased, the entire resistance value of the resistance elements “Resx” becomes small. As a result, the bias current “Ibias” becomes large. The bias current “Ibias” can be calibrated by such control of the transistors “Q10” with the control signal
- According to the present embodiment having been described above, the bias current “Ibias” is calibrated by the
calibration circuit 70. Accordingly, fluctuation of the operation frequency “F” can be further suppressed. - In addition, the
calibration circuit 70 of the present embodiment is realized so as to have a relatively simple configuration. Therefore, upsizing of the device can be suppressed. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
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CN112398326B (en) * | 2019-08-13 | 2022-04-05 | 国民技术股份有限公司 | Soft start device and method based on multi-output device, power supply and chip |
CN111211361A (en) * | 2020-01-07 | 2020-05-29 | 福建科立讯通信有限公司 | Circuit for improving low-temperature performance of common battery |
CN114123112B (en) * | 2021-11-29 | 2024-02-09 | 广东汇芯半导体有限公司 | High voltage integrated circuit |
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JP5475612B2 (en) * | 2010-10-14 | 2014-04-16 | 旭化成エレクトロニクス株式会社 | Power supply |
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JP6031303B2 (en) * | 2012-09-13 | 2016-11-24 | ローム株式会社 | Switching regulator, control circuit thereof, control method, and electronic device |
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JP2015070630A (en) * | 2013-09-26 | 2015-04-13 | 株式会社デンソー | Voltage conversion device |
JP6393164B2 (en) * | 2014-03-11 | 2018-09-19 | エイブリック株式会社 | DC / DC converter |
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JP2016032319A (en) * | 2014-07-28 | 2016-03-07 | ローム株式会社 | Switching power supply device |
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US12040786B2 (en) | 2020-02-18 | 2024-07-16 | Lg Electronics Inc. | Signal processing device and image display device comprising same |
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