US20150077150A1 - Sort Probe Over Current Protection Mechanism - Google Patents
Sort Probe Over Current Protection Mechanism Download PDFInfo
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- US20150077150A1 US20150077150A1 US14/552,950 US201414552950A US2015077150A1 US 20150077150 A1 US20150077150 A1 US 20150077150A1 US 201414552950 A US201414552950 A US 201414552950A US 2015077150 A1 US2015077150 A1 US 2015077150A1
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- 239000000523 sample Substances 0.000 title claims abstract description 51
- 238000012360 testing method Methods 0.000 claims description 26
- 230000004044 response Effects 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
- G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
Definitions
- the present disclosure generally relates to wafer probe testing.
- wafer sort In the manufacture of semiconductor devices, it is necessary that such devices be tested at the wafer level to evaluate their functionality.
- the process in which die in a wafer are tested is commonly referred to as “wafer sort.” Testing and determining design flaws at the die level offers several advantages. First, it allows designers to evaluate the functionality of new devices during development.
- Increasing packaging costs also make wafer sorting a viable cost saver, in that reliability of each die on a wafer may be tested before incurring the higher costs of packaging. Measuring reliability also allows the performance of the production process to be evaluated and production consistency rated, such as for example by “bin switching” whereby the performance of a wafer is downgraded because that wafer's performance did not meet the expected criteria.
- a probe card is an interface between an electronic test system and a semiconductor wafer.
- the probe card is mechanically docked to a prober and electrically connected to a tester to provide an electrical path between the test system and the circuits on the wafer, thereby permitting the testing and validation of the circuits at the wafer level, usually before they are diced and packaged.
- probe head damage due to melted or recessed probes.
- the damaged probes must be repaired or removed to prevent improper binning.
- the entire probe head which may be valued at several tens of thousands of dollars, will need to be discarded as the damage is beyond repair.
- the repair process requires specially trained technicians to manually manipulate or pluck probes working under a microscope.
- the repair process is labor intensive and a production limiter as probe cards scale to tighter pitches and higher probe counts.
- FIG. 1 illustrates one embodiment of a test system.
- FIG. 2 illustrates one embodiment of a probe card
- FIG. 3 illustrates one embodiment of a shunting e-fuse.
- FIG. 4 illustrates one embodiment of a over current detection configuration.
- FIG. 5 is a flow diagram illustrating one embodiment for processing an over current event.
- FIG. 6 illustrates one embodiment of a general-purpose electronic system.
- FIG. 1 illustrates one embodiment of a test system 100 .
- System 100 includes an automated test equipment (ATE) system 110 implemented to perform testing on a device under test (DUT) 150 .
- DUT 150 may be an IC die on a wafer, or a packaged part.
- ATE system 110 is coupled to DUT 150 via a device interface 120 and probe card 130 .
- FIG. 2 illustrates another embodiment of a test system 200 in which a sort probe card 130 is implemented to couple to DUT 150 via sort probes 215 , while being powered by a power supply 205 from an ATE system. Additionally, test system 200 includes shunting e-fuse 230 , thermal fuse 240 , over current detector 250 and threshold detector circuit 255 .
- shunting e-fuse 230 is coupled between a tester power supply 205 and probes 215 .
- e-fuse 230 protects sort probes 215 against over current event.
- FIG. 3 illustrates one embodiment of shunting e-fuse 230 , which includes current sense logic to indicate an over current condition.
- current sense amplifier 310 includes a current sense amplifier 310 , comparator 320 and power FET transistor 330 .
- Current sense amplifier 310 implements a current-sense resistor (R 1 ) to convert a load current received from the ATE system to a small voltage and amply the voltage for output to comparator 320 .
- Comparator 320 compares the amplified voltage from current sense amplifier 310 to a reference voltage (Vref). If the received voltage is greater than Vref, comparator 320 transmits a reference signal to power FET transistor 330 , which forces the power supply to shunt to ground. Thus, the power supply is forced to shut down when an over current event is detected so that sort probes 215 are protected.
- the circuit response time of shunting e-fuse 230 may be detuned by component selection or by adding an RC delay circuit to the amplifier output.
- thermal fuse 240 includes a thermal element is implemented to disconnect probes 215 from power supply 205 upon being melted by heat attributed to an excessive current.
- thermal fuse 240 is a fast response time 0.5A thermal fuse in series on input/output (I/O) lines. Since I/O lines typically have a single non-redundant probe 215 , thermal fuse 240 prevents non-repairable damage to a probe head due to an over current event. In a further embodiment, thermal fuse 240 is to be replaced after an over current occurrence.
- Over current detector 250 and threshold detector circuit 255 are implemented to detect a real time over current occurrence at probes 215 .
- probe temperatures of between 200 C and 1500 C may be produced, which results in a hot probe 215 .
- Hot probes produce light within the range of detection of a photodiode.
- over current detector 250 includes a photo diode placed near the probe 215 array to detect infrared (IR) and visible light emission from sort probes 215 due to joule heating.
- IR infrared
- each over current detector 250 Upon detecting IR and/or visible light, over current detector 250 transmits a signal to threshold detector circuit 255 , which produces a signal to be transmitted to the ATE system to indicate a probe 215 over current condition.
- each over current detector 250 includes an amplifier that is monitored individually by ATE system I/Os via a threshold detector circuit 255 . Further, the voltage magnitude and position of each detector may be used to provide real time information about the location and magnitude of the over current event.
- multiple current detectors 250 are routed through threshold detector circuits 255 and an OR-gate in order to produce a logic signal as an over current event occurs.
- the OR-gate or amplifier output signals are monitored with a test program through a tester channel or an external oscilloscope. Thus, root cause die would be identified as the over current event occurs.
- FIG. 4 illustrates one embodiment of such a configuration.
- the ATE system may be programmed to respond by shutting down power supplies 205 ( 105 does not appear to be defined) and producing a bin signal or other responses that provide automated troubleshooting to identify the source of the over current.
- the OR-gate output may be routed directly to shunting e-fuse 230 , resulting in immediate probe protection and power supply shut down.
- FIG. 5 is a flow diagram illustrating one embodiment for processing an over current event.
- sorting is begun.
- wafers are sorted.
- an over current event is detected.
- a visual inspection of the sort probe array is conducted to identify an over current location.
- sort data is reviewed for the failed die to identify a test segment running when the burn occurred.
- a root cause is identified.
- the root cause is fixed. If no root cause is found (processing block 540 ), a scope test program is run while running the problem test segment on the problem die. If the root cause continues to not be found (processing block 550 ), the investigation is continued (processing block 560 ) until the root cause is identified, processing block 530 .
- FIG. 6 illustrates one embodiment of a computer system 600 .
- the computer system 600 (also referred to as the electronic system 600 ) as depicted can embody a test system that includes an ATE system and a DUT to perform sequential burn-in testing.
- the computer system 600 may be a mobile device such as a netbook computer.
- the computer system 600 may be a mobile device such as a wireless smart phone.
- the computer system 600 may be a desktop computer.
- the computer system 600 may be a hand-held reader.
- the computer system 600 may be a server system.
- the computer system 600 may be a supercomputer or high-performance computing system.
- the electronic system 600 is a computer system that includes a system bus 620 to electrically couple the various component blocks of the electronic system 600 .
- the system bus 620 is a single bus or any combination of busses according to various embodiments.
- the electronic system 600 includes a voltage source 630 that provides power to the integrated circuit 610 . In some embodiments, the voltage source 630 supplies current to the integrated circuit 610 through the system bus 620 .
- the integrated circuit 610 is electrically coupled to the system bus 620 and includes any circuit, or combination of circuits according to an embodiment.
- the integrated circuit 610 includes a processor 612 that can be of any type.
- the processor 612 may mean any type of circuit such as, but not limited to, a microprocessor, a microcontroller, a graphics processor, a digital signal processor, or another processor.
- SRAM embodiments are found in memory caches of the processor.
- Other types of circuits that can be included in the integrated circuit 610 are a custom circuit or an application-specific integrated circuit (ASIC), such as a communications circuit 614 for use in wireless devices such as cellular telephones, smart phones, pagers, portable computers, two-way radios, and similar electronic systems, or a communications circuit for servers.
- ASIC application-specific integrated circuit
- the integrated circuit 610 includes on-die memory 616 such as static random-access memory (SRAM). In an embodiment, the integrated circuit 610 includes embedded on-die memory 616 such as embedded dynamic random-access memory (eDRAM).
- SRAM static random-access memory
- eDRAM embedded dynamic random-access memory
- the integrated circuit 610 is complemented with a subsequent integrated circuit 611 .
- Useful embodiments include a dual processor 613 and a dual communications circuit 615 and dual on-die memory 617 such as SRAM.
- the dual integrated circuit 610 includes embedded on-die memory 617 such as eDRAM.
- the electronic system 600 also includes an external memory 640 that in turn may include one or more memory elements suitable to the particular application, such as a main memory 642 in the form of RAM, one or more hard drives 644 , and/or one or more drives that handle removable media 646 , such as diskettes, compact disks (CDs), digital variable disks (DVDs), flash memory drives, and other removable media known in the art.
- the external memory 640 may also be embedded memory 648 such as the first die in an embedded TSV die stack, according to an embodiment.
- the electronic system 600 also includes a display device 650 , an audio output 660 .
- the electronic system 600 includes an input device such as a controller 670 that may be a keyboard, mouse, trackball, game controller, microphone, voice-recognition device, or any other input device that inputs information into the electronic system 600 .
- an input device 670 is a camera.
- an input device 670 is a digital sound recorder.
- an input device 670 is a camera and a digital sound recorder.
- the integrated circuit 610 can be implemented in a number of different embodiments, including a test system that includes an ATE system and a DUT to perform sequential burn-in testing, and their equivalents, an electronic system, a computer system, one or more methods of fabricating an integrated circuit, and one or more methods of fabricating an electronic assembly that includes a semiconductor die packaged according to any of the several disclosed embodiments as set forth herein in the various embodiments and their art-recognized equivalents.
- a foundation substrate may be included, as represented by the dashed line of FIG. 6 .
- Passive devices may also be included, as is also depicted in FIG. 6 .
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Abstract
An apparatus includes a probe card, a plurality of sort probes coupled to the probe card and detector circuitry to detect a real time over current occurrence at the sort probes.
Description
- The present disclosure generally relates to wafer probe testing.
- In the manufacture of semiconductor devices, it is necessary that such devices be tested at the wafer level to evaluate their functionality. The process in which die in a wafer are tested is commonly referred to as “wafer sort.” Testing and determining design flaws at the die level offers several advantages. First, it allows designers to evaluate the functionality of new devices during development.
- Increasing packaging costs also make wafer sorting a viable cost saver, in that reliability of each die on a wafer may be tested before incurring the higher costs of packaging. Measuring reliability also allows the performance of the production process to be evaluated and production consistency rated, such as for example by “bin switching” whereby the performance of a wafer is downgraded because that wafer's performance did not meet the expected criteria.
- The process of die-testing and wafer sort may be carried out with a wafer probe card. A probe card is an interface between an electronic test system and a semiconductor wafer. Typically the probe card is mechanically docked to a prober and electrically connected to a tester to provide an electrical path between the test system and the circuits on the wafer, thereby permitting the testing and validation of the circuits at the wafer level, usually before they are diced and packaged.
- Periodically, sort probe over current events may result in probe head damage due to melted or recessed probes. The damaged probes must be repaired or removed to prevent improper binning. In severe instances, the entire probe head, which may be valued at several tens of thousands of dollars, will need to be discarded as the damage is beyond repair. In cases where repair is viable, however, the repair process requires specially trained technicians to manually manipulate or pluck probes working under a microscope. Thus, the repair process is labor intensive and a production limiter as probe cards scale to tighter pitches and higher probe counts.
-
FIG. 1 illustrates one embodiment of a test system. -
FIG. 2 illustrates one embodiment of a probe card; -
FIG. 3 illustrates one embodiment of a shunting e-fuse. -
FIG. 4 illustrates one embodiment of a over current detection configuration. -
FIG. 5 is a flow diagram illustrating one embodiment for processing an over current event. -
FIG. 6 illustrates one embodiment of a general-purpose electronic system. - In the following description, numerous specific details are set forth in order to provide a thorough understanding of various embodiments. However, various embodiments of the invention may be practiced without the specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to obscure the particular embodiments of the invention.
- Reference in the specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least an implementation. The appearances of the phrase “in one embodiment” in various places in the specification may or may not be all referring to the same embodiment.
-
FIG. 1 illustrates one embodiment of atest system 100.System 100 includes an automated test equipment (ATE)system 110 implemented to perform testing on a device under test (DUT) 150.DUT 150 may be an IC die on a wafer, or a packaged part. In one embodiment, ATEsystem 110 is coupled toDUT 150 via adevice interface 120 andprobe card 130. -
FIG. 2 illustrates another embodiment of atest system 200 in which asort probe card 130 is implemented to couple to DUT 150 viasort probes 215, while being powered by apower supply 205 from an ATE system. Additionally,test system 200 includesshunting e-fuse 230,thermal fuse 240, overcurrent detector 250 andthreshold detector circuit 255. - In one embodiment,
shunting e-fuse 230 is coupled between atester power supply 205 andprobes 215. In such an embodiment, e-fuse 230 protectssort probes 215 against over current event.FIG. 3 illustrates one embodiment ofshunting e-fuse 230, which includes current sense logic to indicate an over current condition. - According to one embodiment,
current sense amplifier 310 includes acurrent sense amplifier 310, comparator 320 andpower FET transistor 330.Current sense amplifier 310 implements a current-sense resistor (R1) to convert a load current received from the ATE system to a small voltage and amply the voltage for output to comparator 320. - Comparator 320 compares the amplified voltage from
current sense amplifier 310 to a reference voltage (Vref). If the received voltage is greater than Vref, comparator 320 transmits a reference signal to powerFET transistor 330, which forces the power supply to shunt to ground. Thus, the power supply is forced to shut down when an over current event is detected so thatsort probes 215 are protected. In one embodiment, the circuit response time ofshunting e-fuse 230 may be detuned by component selection or by adding an RC delay circuit to the amplifier output. - Referring back to
FIG. 2 ,thermal fuse 240 includes a thermal element is implemented to disconnectprobes 215 frompower supply 205 upon being melted by heat attributed to an excessive current. In one embodiment,thermal fuse 240 is a fast response time 0.5A thermal fuse in series on input/output (I/O) lines. Since I/O lines typically have a single non-redundantprobe 215,thermal fuse 240 prevents non-repairable damage to a probe head due to an over current event. In a further embodiment,thermal fuse 240 is to be replaced after an over current occurrence. - Over
current detector 250 andthreshold detector circuit 255 are implemented to detect a real time over current occurrence atprobes 215. During over current events, probe temperatures of between 200C and 1500C may be produced, which results in ahot probe 215. Hot probes produce light within the range of detection of a photodiode. Accordingly, overcurrent detector 250 includes a photo diode placed near theprobe 215 array to detect infrared (IR) and visible light emission fromsort probes 215 due to joule heating. - Upon detecting IR and/or visible light, over
current detector 250 transmits a signal tothreshold detector circuit 255, which produces a signal to be transmitted to the ATE system to indicate aprobe 215 over current condition. According to one embodiment, each overcurrent detector 250 includes an amplifier that is monitored individually by ATE system I/Os via athreshold detector circuit 255. Further, the voltage magnitude and position of each detector may be used to provide real time information about the location and magnitude of the over current event. - In another embodiment, multiple
current detectors 250 are routed throughthreshold detector circuits 255 and an OR-gate in order to produce a logic signal as an over current event occurs. In such an embodiment, the OR-gate or amplifier output signals are monitored with a test program through a tester channel or an external oscilloscope. Thus, root cause die would be identified as the over current event occurs.FIG. 4 illustrates one embodiment of such a configuration. - In a further embodiment, the ATE system may be programmed to respond by shutting down power supplies 205 (105 does not appear to be defined) and producing a bin signal or other responses that provide automated troubleshooting to identify the source of the over current. In yet another embodiment, the OR-gate output may be routed directly to shunting
e-fuse 230, resulting in immediate probe protection and power supply shut down. -
FIG. 5 is a flow diagram illustrating one embodiment for processing an over current event. Atprocessing block 505, sorting is begun. Atprocessing block 510, wafers are sorted. At processing block 515 an over current event is detected. Atprocessing block 520, a visual inspection of the sort probe array is conducted to identify an over current location. - At
processing block 525, sort data is reviewed for the failed die to identify a test segment running when the burn occurred. Atprocessing block 525, a root cause is identified. Atprocessing block 535, the root cause is fixed. If no root cause is found (processing block 540), a scope test program is run while running the problem test segment on the problem die. If the root cause continues to not be found (processing block 550), the investigation is continued (processing block 560) until the root cause is identified,processing block 530. -
FIG. 6 illustrates one embodiment of a computer system 600. The computer system 600 (also referred to as the electronic system 600) as depicted can embody a test system that includes an ATE system and a DUT to perform sequential burn-in testing. - The computer system 600 may be a mobile device such as a netbook computer. The computer system 600 may be a mobile device such as a wireless smart phone. The computer system 600 may be a desktop computer. The computer system 600 may be a hand-held reader. The computer system 600 may be a server system. The computer system 600 may be a supercomputer or high-performance computing system.
- In an embodiment, the electronic system 600 is a computer system that includes a system bus 620 to electrically couple the various component blocks of the electronic system 600. The system bus 620 is a single bus or any combination of busses according to various embodiments. The electronic system 600 includes a
voltage source 630 that provides power to theintegrated circuit 610. In some embodiments, thevoltage source 630 supplies current to theintegrated circuit 610 through the system bus 620. - The
integrated circuit 610 is electrically coupled to the system bus 620 and includes any circuit, or combination of circuits according to an embodiment. In an embodiment, theintegrated circuit 610 includes aprocessor 612 that can be of any type. As used herein, theprocessor 612 may mean any type of circuit such as, but not limited to, a microprocessor, a microcontroller, a graphics processor, a digital signal processor, or another processor. - In an embodiment, SRAM embodiments are found in memory caches of the processor. Other types of circuits that can be included in the
integrated circuit 610 are a custom circuit or an application-specific integrated circuit (ASIC), such as a communications circuit 614 for use in wireless devices such as cellular telephones, smart phones, pagers, portable computers, two-way radios, and similar electronic systems, or a communications circuit for servers. - In an embodiment, the
integrated circuit 610 includes on-die memory 616 such as static random-access memory (SRAM). In an embodiment, theintegrated circuit 610 includes embedded on-die memory 616 such as embedded dynamic random-access memory (eDRAM). - In an embodiment, the
integrated circuit 610 is complemented with a subsequent integrated circuit 611. Useful embodiments include adual processor 613 and adual communications circuit 615 and dual on-die memory 617 such as SRAM. In an embodiment, the dualintegrated circuit 610 includes embedded on-die memory 617 such as eDRAM. - In an embodiment, the electronic system 600 also includes an
external memory 640 that in turn may include one or more memory elements suitable to the particular application, such as a main memory 642 in the form of RAM, one or morehard drives 644, and/or one or more drives that handleremovable media 646, such as diskettes, compact disks (CDs), digital variable disks (DVDs), flash memory drives, and other removable media known in the art. Theexternal memory 640 may also be embedded memory 648 such as the first die in an embedded TSV die stack, according to an embodiment. - In an embodiment, the electronic system 600 also includes a
display device 650, an audio output 660. In an embodiment, the electronic system 600 includes an input device such as a controller 670 that may be a keyboard, mouse, trackball, game controller, microphone, voice-recognition device, or any other input device that inputs information into the electronic system 600. In an embodiment, an input device 670 is a camera. In an embodiment, an input device 670 is a digital sound recorder. In an embodiment, an input device 670 is a camera and a digital sound recorder. - As shown herein, the
integrated circuit 610 can be implemented in a number of different embodiments, including a test system that includes an ATE system and a DUT to perform sequential burn-in testing, and their equivalents, an electronic system, a computer system, one or more methods of fabricating an integrated circuit, and one or more methods of fabricating an electronic assembly that includes a semiconductor die packaged according to any of the several disclosed embodiments as set forth herein in the various embodiments and their art-recognized equivalents. The elements, materials, geometries, dimensions, and sequence of operations can all be varied to suit particular I/O coupling requirements including array contact count, array contact configuration for a microelectronic die embedded in a processor mounting substrate according to any of the several disclosed semiconductor die packaged with a thermal interface unit and their equivalents. A foundation substrate may be included, as represented by the dashed line ofFIG. 6 . Passive devices may also be included, as is also depicted inFIG. 6 . - Although embodiments of the invention have been described in language specific to structural features and/or methodological acts, it is to be understood that claimed subject matter may not be limited to the specific features or acts described. Rather, the specific features and acts are disclosed as sample forms of implementing the claimed subject matter.
Claims (14)
1. An apparatus comprising:
a probe card;
a plurality of sort probes coupled to the probe card; and
a shunting fuse coupled between the one or more of the plurality of sort probes and a power supply to protect the one or more of the plurality of sort probes against an over current event.
2. The apparatus of claim 1 wherein the shunting fuse comprises a comparator to compare a received voltage to a reference voltage and generate a reference signal upon detecting that the received voltage is greater than the reference voltage.
3. The apparatus of claim 2 wherein the shunting fuse further comprises a transistor to shunt the power supply to ground in response to receiving the reference signal.
4. The apparatus of claim 3 wherein the shunting fuse further comprises:
a resistor to convert a load current to a small voltage; and
a current sense amplifier to amplify the small voltage to the received voltage.
5. The apparatus of claim 1 further comprising a thermal fuse to disconnect the one or more of the plurality of sort probes from the power supply upon the occurrence of an excessive current.
6. The apparatus of claim 5 wherein the thermal fuse is a fast response fuse.
7-15. (canceled)
16. A test system comprising:
an automated test equipment (ATE) system;
a probe card coupled to the ATE system;
a plurality of sort probes coupled to the probe card; and
an integrated circuit (IC) device coupled the probe card via the plurality of sort probes; and
a shunting fuse coupled between the one or more of the plurality of sort probes and the ATE system to protect the one or more of the plurality of sort probes against an over current event.
17. The test system of claim 17 wherein the shunting fuse comprises a comparator to compare a received voltage to a reference voltage and generate a reference signal upon detecting that the received voltage is greater than the reference voltage.
18. The test system of claim 17 wherein the shunting fuse further comprises a transistor to shunt the power supply to ground in response to receiving the reference signal.
19. The test system of claim 18 wherein the shunting fuse further comprises:
a resistor to convert a load current from the ATE system to a small voltage; and
a current sense amplifier to amplify the small voltage to the received voltage.
20. The test system of claim 16 further comprising a thermal fuse to disconnect the one or more of the plurality of sort probes from the ATE system power supply upon the occurrence of an excessive current.
21-29. (canceled)
30. The test system of claim 20 wherein the thermal fuse is a fast response fuse.
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US14/552,950 US20150077150A1 (en) | 2012-09-28 | 2014-11-25 | Sort Probe Over Current Protection Mechanism |
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US13/630,114 US8937794B2 (en) | 2012-09-28 | 2012-09-28 | Sort probe over current protection mechanism |
US14/552,950 US20150077150A1 (en) | 2012-09-28 | 2014-11-25 | Sort Probe Over Current Protection Mechanism |
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US13/630,114 Division US8937794B2 (en) | 2012-09-28 | 2012-09-28 | Sort probe over current protection mechanism |
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US13/630,114 Expired - Fee Related US8937794B2 (en) | 2012-09-28 | 2012-09-28 | Sort probe over current protection mechanism |
US14/552,950 Abandoned US20150077150A1 (en) | 2012-09-28 | 2014-11-25 | Sort Probe Over Current Protection Mechanism |
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US13/630,114 Expired - Fee Related US8937794B2 (en) | 2012-09-28 | 2012-09-28 | Sort probe over current protection mechanism |
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US10228742B2 (en) | 2017-05-18 | 2019-03-12 | Cypress Semiconductor Corporation | USB power control analog subsystem architecture |
US10222402B2 (en) * | 2017-05-18 | 2019-03-05 | Cypress Semiconductor Corporation | Current sensing in a USB power control analog subsystem |
US10784172B2 (en) * | 2017-12-29 | 2020-09-22 | Texas Instruments Incorporated | Testing solid state devices before completing manufacture |
CN109347059A (en) * | 2018-11-05 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of hardware over-current protection method and system for bidirectional current output |
US11108223B2 (en) * | 2019-05-15 | 2021-08-31 | Johnson Controls Fire Protection LP | Abnormal impedance fault isolation |
US11132890B2 (en) | 2019-05-15 | 2021-09-28 | Johnson Controls Fire Protection LP | Fault isolation locality |
US11176806B1 (en) | 2019-12-06 | 2021-11-16 | Johnson Controls Fire Protection LP | Erratic short-circuit detection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769752A (en) * | 1986-06-19 | 1988-09-06 | Powertron Limited | Power supplies for electrical and electronic equipment |
US20030171909A1 (en) * | 2002-03-06 | 2003-09-11 | Tomoyuki Inomoto | Logic emulator |
US20060217906A1 (en) * | 2005-03-22 | 2006-09-28 | Formfactor | Voltage fault detection and protection |
US20100225343A1 (en) * | 2009-03-06 | 2010-09-09 | Nec Electronics Corporation | Probe card, semiconductor testing device including the same, and fuse checking method for probe card |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562636B1 (en) * | 1999-07-14 | 2003-05-13 | Aehr Test Systems | Wafer level burn-in and electrical test system and method |
EP1398638A1 (en) * | 2002-09-10 | 2004-03-17 | Agilent Technologies, Inc. - a Delaware corporation - | Power measurement apparatus and method thereof |
EP1770842A1 (en) * | 2005-09-29 | 2007-04-04 | ABB Research Ltd | Apparatus for the detection of an overcurrent in a conductor and method for operating such an apparatus |
EP2135096B1 (en) * | 2007-04-03 | 2014-09-10 | Scanimetrics Inc. | Testing of electronic circuits using an active probe integrated circuit |
-
2012
- 2012-09-28 US US13/630,114 patent/US8937794B2/en not_active Expired - Fee Related
-
2014
- 2014-11-25 US US14/552,950 patent/US20150077150A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769752A (en) * | 1986-06-19 | 1988-09-06 | Powertron Limited | Power supplies for electrical and electronic equipment |
US20030171909A1 (en) * | 2002-03-06 | 2003-09-11 | Tomoyuki Inomoto | Logic emulator |
US20060217906A1 (en) * | 2005-03-22 | 2006-09-28 | Formfactor | Voltage fault detection and protection |
US20100225343A1 (en) * | 2009-03-06 | 2010-09-09 | Nec Electronics Corporation | Probe card, semiconductor testing device including the same, and fuse checking method for probe card |
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US8937794B2 (en) | 2015-01-20 |
US20140092505A1 (en) | 2014-04-03 |
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