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US11315852B2 - Thermal interface layer for electronic device - Google Patents

Thermal interface layer for electronic device Download PDF

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Publication number
US11315852B2
US11315852B2 US16/599,712 US201916599712A US11315852B2 US 11315852 B2 US11315852 B2 US 11315852B2 US 201916599712 A US201916599712 A US 201916599712A US 11315852 B2 US11315852 B2 US 11315852B2
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Prior art keywords
pane
thermal
recited
electronic device
thermal conductance
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US20210111096A1 (en
Inventor
Scott D. Brandenburg
David W. Zimmerman
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Aptiv Technologies AG
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Aptiv Technologies Ltd
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Priority to US16/599,712 priority Critical patent/US11315852B2/en
Priority to EP20200593.0A priority patent/EP3806144B8/en
Priority to CN202011072625.0A priority patent/CN112652592A/en
Publication of US20210111096A1 publication Critical patent/US20210111096A1/en
Publication of US11315852B2 publication Critical patent/US11315852B2/en
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Assigned to APTIV MANUFACTURING MANAGEMENT SERVICES S.À R.L. reassignment APTIV MANUFACTURING MANAGEMENT SERVICES S.À R.L. MERGER Assignors: APTIV TECHNOLOGIES (2) S.À R.L.
Assigned to Aptiv Technologies AG reassignment Aptiv Technologies AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: APTIV MANUFACTURING MANAGEMENT SERVICES S.À R.L.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change

Definitions

  • Vehicle driver assistance systems utilize controllers, such as a multi-domain controllers, that have multiple integrated circuit (IC) chips.
  • IC integrated circuit
  • the IC chips often generate significant amounts of waste heat. Removal of the waste heat to ensure reliable operation is challenging, and next-generation IC chips are expected to generate even greater amounts of waste heat.
  • thermal interface materials typically include metals or graphite for high thermal conductivity. Such materials, however, are also electrically conductive and can cause electrical short circuits if they migrate from the interface.
  • An electronic device includes a printed circuit board that supports an integrated circuit (IC) chip, and a thermal interface layer that is configured to transfer thermal energy from the IC chip.
  • the thermal interface layer includes a containment frame that is non-electrically conductive, and a thermal conductance pane inset in the containment frame.
  • the containment frame includes a porous structure.
  • the porous structure is a mesh.
  • the containment frame includes a composite material disposed in pores of the porous structure.
  • the composite material includes a polymer.
  • the composite material includes non-electrically conductive particles.
  • the non-electrically conductive particles are selected from the group consisting of alumina, boron nitride, aluminum nitride, and combinations thereof.
  • the composite material includes, by weight, less than 5% of the non-electrically conductive particles.
  • the composite material has a softening point of 40° C. to 70° C.
  • the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
  • the thermal conductance pane defines side edges
  • the containment frame defines inside edges that circumscribe an interior opening
  • the thermal conductance pane is inset in the interior opening
  • the side edges of the thermal conductance pane are secured to the inside edges of the containment frame.
  • the porous structure is a mesh
  • the containment frame includes a composite material disposed in pores of the mesh
  • the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
  • a thermal interface layer for transferring thermal energy from an integrated circuit chip includes a containment frame that is non-electrically conductive; and a thermal conductance pane inset in the containment frame.
  • the containment frame includes a porous structure and a composite material disposed in pores of the porous structure.
  • the composite material has a softening point of 40° C. to 70° C.
  • the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof, the thermal conductance pane defines side edges, the containment frame defines inside edges that circumscribe an interior opening, the thermal conductance pane is inset in the interior opening, and the side edges of the thermal conductance pane are secured to the inside edges of the containment frame.
  • the porous structure is a mesh
  • the containment frame includes a composite material disposed in pores of the mesh.
  • a method for fabricating a thermal interface layer according to an example of the present disclosure includes providing a containment frame that is non-electrically conductive, and insetting a thermal conductance pane in the containment frame.
  • the providing includes introducing a composite material into pores of a porous structure to form a blank frame.
  • the providing further includes removing an interior region from the blank frame to form the containment frame with inside edges that circumscribe an interior opening.
  • the insetting includes mounting the thermal conductance pane in the interior opening.
  • FIG. 1 illustrates an example electronic device.
  • FIG. 2 illustrates a thermal interface layer
  • FIG. 3 illustrates a composite material that has non-electrically conductive particles.
  • FIG. 4 illustrates a method for fabricating a thermal interface layer.
  • FIG. 1 illustrates a sectioned view of an electronic device 20 .
  • the electronic device 20 may be, but is not limited to, a multi-domain controller for a vehicle driver assistance system.
  • the electronic device 20 generally includes a printed circuit board 22 (“PCB 22 ”) and an integrated circuit chip 24 (“IC chip 24 ”) supported on the PCB 22 .
  • the IC chip 24 is supported on the PCB 22 via an interposer board 26 and solder balls 28 . It is to be appreciated, however, that other mounting approaches may alternatively be employed.
  • the IC chip 24 may generate waste thermal energy of approximately 200 Watts up to approximately 1000 Watts.
  • the electronic device 20 includes a thermal interface layer 30 that conducts and transfers thermal energy away from the IC chip 24 .
  • the thermal energy is rejected to a thermal dissipation device 32 , such as a heat sink, adjacent the thermal interface layer 30 .
  • a metal layer 24 a on the topside of the IC chip 24 may facilitate transfer of thermal energy from the IC chip 24 to the thermal interface layer 30 .
  • FIG. 2 illustrates an isolated plan view of the thermal interface layer 30 .
  • the thermal interface layer 30 includes a containment frame 34 that is non-electrically conductive and a thermal conductance pane 36 that is inset in the containment frame 34 .
  • the containment frame 34 is a border that defines outside edges 34 a and inside edges 34 b .
  • the inside edges 34 b circumscribe an interior opening 34 c .
  • the thermal conductance pane 36 is inset in the interior opening 34 c .
  • the containment frame 34 and the thermal conductance pane 36 are of equal thickness such that the thermal conductance pane 36 is flush with the containment frame 34 .
  • the thermal conductance pane 36 is generally planar and defines a heat-input surface 36 a , a heat-output surface 36 b , and side edges 36 c .
  • the heat-input surface 36 a faces toward the IC chip 24 and the heat-output surface faces toward the thermal dissipation device 32 .
  • the side edges 34 c of the thermal conductance pane 36 are secured to the inside edges 34 b of the containment frame 34 , which is described in further detail below.
  • the containment frame 34 is composed of a porous structure 38 that is non-electrically conductive.
  • the porous structure 38 includes pores 40 .
  • the porous structure 38 is a mesh of networked fibers or wires.
  • the porous structure 38 is composed of a polymer-based composition or a glass composition.
  • the containment frame 34 further includes a composite material 42 disposed in the pores 40 of the porous structure 38 .
  • the composite material 42 fills the pores 40 and is also electrically non-conductive.
  • an electrically conductive material is a material, such as copper metal, aluminum metal, or graphite, which permits electric current to easily flow, and an electrically non-conductive material is a material which does not permit electric current to easily flow.
  • the composite material 42 is a resin that is composed of a blend of constituent substances.
  • the constituent substances may include, but is not limited to, wax, polymer, organic binder, tackifying agents, and plasticizers.
  • the composite material has a softening point of 40° C. to 70° C. Such a softening point permits processing at relatively low temperatures but also allows the thermal interface layer 30 to soften or even melt during operation to deform and mitigate stresses caused by mismatches in coefficient of thermal expansion between the IC chip 24 and the thermal dissipation device 32 .
  • the composite material 42 may be repeatedly softened or melted and thus may be considered to be a thermoplastic material. In the softened or melted state, the pores 40 also retain the composite material 42 by preventing the composite material from flowing out of the thermal interface layer 30 .
  • FIG. 3 illustrates a representative portion of a modified example of the composite material 42 .
  • the resin as described above is represented at 44 .
  • the composite material 42 further includes non-electrically conductive particles 46 dispersed through the resin 44 .
  • the resin 44 thus serves as a matrix in which the particles 46 are embedded.
  • the resin 44 generally has poor thermal conductivity.
  • the particles 46 have a higher thermal conductivity than the resin and thus serve to increase the thermal conductivity of the composite material 42 .
  • the particles 46 are composed of alumina, boron nitride, aluminum nitride, or combinations thereof.
  • the composite material 42 contains a relatively low amount of the particles 46 , to avoid altering other desired physical properties of the composite material 42 .
  • the composite material 42 includes, by weight percent, approximately 0.5% to 5% of the particles 46 .
  • the thermal conductance pane 36 is composed of a thermally conducting material.
  • Example materials include, but are not limited to, copper metal, aluminum metal, and graphite.
  • the thermal conductance pane 36 may be composed exclusively of the thermally conducting material or materials, or alternatively of a composite material that includes the thermally conducting material or materials.
  • the thermal conductance pane 36 is composed of oriented fibers 48 of the thermally conducting material, such as graphite fibers.
  • the fibers 48 are unidirectionally vertically oriented such that the axial direction of the fibers 48 is approximately orthogonal to the plane of the IC chip 24 , to facilitate enhanced thermal conductance.
  • the thermal conductance pane 36 serves to conduct and transfer thermal energy from the IC chip 24 .
  • the thermally conducting material used in the thermal conductance pane 36 is also electrically conductive. Thus, if the thermally conducting material were to migrate from the thermal conductance pane 36 it could cause an electrical short circuit between electrical components elsewhere in the electronic device 20 .
  • the containment frame 34 continuously surrounds the perimeter of the thermal conductance pane 36 and prevents the material of the thermal conductance pane 36 from migrating laterally (in the plane of the thermal interface layer 30 ). In this regard, the containment frame 34 serves to confine the material of the thermal conductance pane 36 , thereby reducing the chances of migration and short-circuiting.
  • the containment frame 34 may transfer some thermal energy, it is generally a poor thermal conductor in comparison to the thermal conductance pane 36 .
  • the areal size of the thermal interface layer 30 is substantially larger than the areal size of the containment frame 34 .
  • the areal size of the thermal conductance pane 36 is larger than the areal size of the containment frame by a factor of at least 2, but more preferably by a factor of at least 5 or at least 10.
  • FIG. 4 depicts a method 60 of fabricating the thermal interface layer 30 .
  • the method 60 initially includes providing the porous structure 38 , as shown in the upper left-hand portion of the figure. At this point, the pores 40 of the porous structure 38 are unfilled.
  • the porous structure 38 can be provided on a carrier sheet 62 .
  • the carrier sheet 62 is composed of polytetrafluoroethylene, polyester, or polyimide, but other carrier sheets may alternatively be used.
  • the carrier sheet 62 facilitates handling of the porous structure 38 and, in some examples, may support multiple porous structures 38 for co-processing to fabricate multiple thermal interface layers 30 at once.
  • the composite material 42 is introduced into the pores 40 of the porous structure 38 to form a blank frame 64 .
  • the composite material 42 is introduced using a screen printing process. For instance, the composite material 42 is heated to a liquid in the screen printing process and the liquid is then dispensed into the pores 40 . The liquid then cools and solidifies so as to be retained in the pores 40 . The printing may be repeated over multiple iterations to completely fill the pores 40 .
  • the carrier sheet 62 serves as the “floor” of the pores 40 to support the liquid in the pores 40 prior to cooling into solid form.
  • an interior region 66 of the blank frame 64 is removed, as shown in the lower right-hand portion of the figure.
  • the interior region 66 is removed using a stamping process, although other removal techniques could alternatively be used.
  • the removal of the interior region 66 creates the interior opening 34 c.
  • the thermal conductance pane 36 is inset into the containment frame 34 .
  • the insetting includes placing the thermal conductance pane 36 in the interior opening 34 c .
  • the geometry of the interior opening 34 c is approximately the same as the geometry of the thermal conductance pane 36 such that the thermal conductance pane 36 fits closely into the interior opening 34 c .
  • the containment frame 34 may be heated such that the composite material 42 reflows around the side edges 36 c of the thermal conductance pane 36 , to secure the pane 36 to the frame 34 .
  • the resulting thermal interface layer 30 may then be provided for assembly into the electronic device 20 .
  • the thermal interface layer 30 may remain on the carrier sheet 62 after fabrication.
  • a pick-and-place machine may then be used to remove the thermal interface layer 30 from the carrier sheet 62 and place it on the thermal dissipation device 32 or on the topside of the IC chip 24 .
  • the thermal interface layer 30 may be heated during the placement process to tackify the composite material 42 so that the thermal interface layer 30 adheres to the thermal dissipation device 32 or IC chip 24 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

An electronic device includes a printed circuit board that supports an integrated circuit (IC) chip and a thermal interface layer that is configured to transfer thermal energy from the IC chip. The thermal interface layer includes a containment frame that is non-electrically conductive and a thermal conductance pane that is inset in the containment frame.

Description

BACKGROUND
Vehicle driver assistance systems utilize controllers, such as a multi-domain controllers, that have multiple integrated circuit (IC) chips. The IC chips often generate significant amounts of waste heat. Removal of the waste heat to ensure reliable operation is challenging, and next-generation IC chips are expected to generate even greater amounts of waste heat.
One approach to removing the waste heat involves use of a heat sink on the topside of the IC chip. In order to enhance heat transfer a thermal interface material is used between the IC chip and the heat sink. Thermal interface materials typically include metals or graphite for high thermal conductivity. Such materials, however, are also electrically conductive and can cause electrical short circuits if they migrate from the interface.
SUMMARY
An electronic device according to an example of the present disclosure includes a printed circuit board that supports an integrated circuit (IC) chip, and a thermal interface layer that is configured to transfer thermal energy from the IC chip. The thermal interface layer includes a containment frame that is non-electrically conductive, and a thermal conductance pane inset in the containment frame.
In a further embodiment of any of the foregoing embodiments, the containment frame includes a porous structure.
In a further embodiment of any of the foregoing embodiments, the porous structure is a mesh.
In a further embodiment of any of the foregoing embodiments, the containment frame includes a composite material disposed in pores of the porous structure.
In a further embodiment of any of the foregoing embodiments, the composite material includes a polymer.
In a further embodiment of any of the foregoing embodiments, the composite material includes non-electrically conductive particles.
In a further embodiment of any of the foregoing embodiments, the non-electrically conductive particles are selected from the group consisting of alumina, boron nitride, aluminum nitride, and combinations thereof.
In a further embodiment of any of the foregoing embodiments, the composite material includes, by weight, less than 5% of the non-electrically conductive particles.
In a further embodiment of any of the foregoing embodiments, the composite material has a softening point of 40° C. to 70° C.
In a further embodiment of any of the foregoing embodiments, the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
In a further embodiment of any of the foregoing embodiments, the thermal conductance pane defines side edges, the containment frame defines inside edges that circumscribe an interior opening, the thermal conductance pane is inset in the interior opening, and the side edges of the thermal conductance pane are secured to the inside edges of the containment frame.
In a further embodiment of any of the foregoing embodiments, the porous structure is a mesh, the containment frame includes a composite material disposed in pores of the mesh, and the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
A thermal interface layer for transferring thermal energy from an integrated circuit chip according to an example of the disclosure includes a containment frame that is non-electrically conductive; and a thermal conductance pane inset in the containment frame.
In a further embodiment of any of the foregoing embodiments, the containment frame includes a porous structure and a composite material disposed in pores of the porous structure.
In a further embodiment of any of the foregoing embodiments, the composite material has a softening point of 40° C. to 70° C.
In a further embodiment of any of the foregoing embodiments, the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof, the thermal conductance pane defines side edges, the containment frame defines inside edges that circumscribe an interior opening, the thermal conductance pane is inset in the interior opening, and the side edges of the thermal conductance pane are secured to the inside edges of the containment frame.
In a further embodiment of any of the foregoing embodiments, the porous structure is a mesh, the containment frame includes a composite material disposed in pores of the mesh.
A method for fabricating a thermal interface layer according to an example of the present disclosure includes providing a containment frame that is non-electrically conductive, and insetting a thermal conductance pane in the containment frame.
In a further embodiment of any of the foregoing embodiments, the providing includes introducing a composite material into pores of a porous structure to form a blank frame.
In a further embodiment of any of the foregoing embodiments, the providing further includes removing an interior region from the blank frame to form the containment frame with inside edges that circumscribe an interior opening.
In a further embodiment of any of the foregoing embodiments, the insetting includes mounting the thermal conductance pane in the interior opening.
BRIEF DESCRIPTION OF THE DRAWINGS
The various features and advantages of the present disclosure will become apparent to those skilled in the art from the following detailed description. The drawings that accompany the detailed description can be briefly described as follows.
FIG. 1 illustrates an example electronic device.
FIG. 2 illustrates a thermal interface layer.
FIG. 3 illustrates a composite material that has non-electrically conductive particles.
FIG. 4 illustrates a method for fabricating a thermal interface layer.
 DETAILED DESCRIPTION
FIG. 1 illustrates a sectioned view of an electronic device 20. The electronic device 20 may be, but is not limited to, a multi-domain controller for a vehicle driver assistance system. The electronic device 20 generally includes a printed circuit board 22 (“PCB 22”) and an integrated circuit chip 24 (“IC chip 24”) supported on the PCB 22. As shown, the IC chip 24 is supported on the PCB 22 via an interposer board 26 and solder balls 28. It is to be appreciated, however, that other mounting approaches may alternatively be employed.
The IC chip 24 may generate waste thermal energy of approximately 200 Watts up to approximately 1000 Watts. In this regard, the electronic device 20 includes a thermal interface layer 30 that conducts and transfers thermal energy away from the IC chip 24. In the illustrated example, the thermal energy is rejected to a thermal dissipation device 32, such as a heat sink, adjacent the thermal interface layer 30. A metal layer 24 a on the topside of the IC chip 24 may facilitate transfer of thermal energy from the IC chip 24 to the thermal interface layer 30.
FIG. 2 illustrates an isolated plan view of the thermal interface layer 30. The thermal interface layer 30 includes a containment frame 34 that is non-electrically conductive and a thermal conductance pane 36 that is inset in the containment frame 34. The containment frame 34 is a border that defines outside edges 34 a and inside edges 34 b. The inside edges 34 b circumscribe an interior opening 34 c. The thermal conductance pane 36 is inset in the interior opening 34 c. In general, the containment frame 34 and the thermal conductance pane 36 are of equal thickness such that the thermal conductance pane 36 is flush with the containment frame 34.
The thermal conductance pane 36 is generally planar and defines a heat-input surface 36 a, a heat-output surface 36 b, and side edges 36 c. The heat-input surface 36 a faces toward the IC chip 24 and the heat-output surface faces toward the thermal dissipation device 32. The side edges 34 c of the thermal conductance pane 36 are secured to the inside edges 34 b of the containment frame 34, which is described in further detail below.
The containment frame 34 is composed of a porous structure 38 that is non-electrically conductive. The porous structure 38 includes pores 40. In the illustrated example, the porous structure 38 is a mesh of networked fibers or wires. For example, the porous structure 38 is composed of a polymer-based composition or a glass composition.
The containment frame 34 further includes a composite material 42 disposed in the pores 40 of the porous structure 38. The composite material 42 fills the pores 40 and is also electrically non-conductive. As used herein, an electrically conductive material is a material, such as copper metal, aluminum metal, or graphite, which permits electric current to easily flow, and an electrically non-conductive material is a material which does not permit electric current to easily flow.
As an example, the composite material 42 is a resin that is composed of a blend of constituent substances. The constituent substances may include, but is not limited to, wax, polymer, organic binder, tackifying agents, and plasticizers. In one example, the composite material has a softening point of 40° C. to 70° C. Such a softening point permits processing at relatively low temperatures but also allows the thermal interface layer 30 to soften or even melt during operation to deform and mitigate stresses caused by mismatches in coefficient of thermal expansion between the IC chip 24 and the thermal dissipation device 32. The composite material 42 may be repeatedly softened or melted and thus may be considered to be a thermoplastic material. In the softened or melted state, the pores 40 also retain the composite material 42 by preventing the composite material from flowing out of the thermal interface layer 30.
FIG. 3 illustrates a representative portion of a modified example of the composite material 42. In this example, the resin as described above is represented at 44. The composite material 42 further includes non-electrically conductive particles 46 dispersed through the resin 44. The resin 44 thus serves as a matrix in which the particles 46 are embedded. The resin 44 generally has poor thermal conductivity. The particles 46 have a higher thermal conductivity than the resin and thus serve to increase the thermal conductivity of the composite material 42. As an example, the particles 46 are composed of alumina, boron nitride, aluminum nitride, or combinations thereof.
The composite material 42 contains a relatively low amount of the particles 46, to avoid altering other desired physical properties of the composite material 42. For instance, the composite material 42 includes, by weight percent, approximately 0.5% to 5% of the particles 46.
The thermal conductance pane 36 is composed of a thermally conducting material. Example materials include, but are not limited to, copper metal, aluminum metal, and graphite. The thermal conductance pane 36 may be composed exclusively of the thermally conducting material or materials, or alternatively of a composite material that includes the thermally conducting material or materials. In one example, which is demonstrated in FIG. 1, the thermal conductance pane 36 is composed of oriented fibers 48 of the thermally conducting material, such as graphite fibers. For instance, the fibers 48 are unidirectionally vertically oriented such that the axial direction of the fibers 48 is approximately orthogonal to the plane of the IC chip 24, to facilitate enhanced thermal conductance.
In the thermal interface layer 30 the thermal conductance pane 36 serves to conduct and transfer thermal energy from the IC chip 24. The thermally conducting material used in the thermal conductance pane 36, however, is also electrically conductive. Thus, if the thermally conducting material were to migrate from the thermal conductance pane 36 it could cause an electrical short circuit between electrical components elsewhere in the electronic device 20. The containment frame 34 continuously surrounds the perimeter of the thermal conductance pane 36 and prevents the material of the thermal conductance pane 36 from migrating laterally (in the plane of the thermal interface layer 30). In this regard, the containment frame 34 serves to confine the material of the thermal conductance pane 36, thereby reducing the chances of migration and short-circuiting.
Additionally, while the containment frame 34 may transfer some thermal energy, it is generally a poor thermal conductor in comparison to the thermal conductance pane 36. In this regard, the areal size of the thermal interface layer 30 is substantially larger than the areal size of the containment frame 34. For instance, the areal size of the thermal conductance pane 36 is larger than the areal size of the containment frame by a factor of at least 2, but more preferably by a factor of at least 5 or at least 10.
FIG. 4 depicts a method 60 of fabricating the thermal interface layer 30. The method 60 initially includes providing the porous structure 38, as shown in the upper left-hand portion of the figure. At this point, the pores 40 of the porous structure 38 are unfilled. The porous structure 38 can be provided on a carrier sheet 62. For instance, the carrier sheet 62 is composed of polytetrafluoroethylene, polyester, or polyimide, but other carrier sheets may alternatively be used. The carrier sheet 62 facilitates handling of the porous structure 38 and, in some examples, may support multiple porous structures 38 for co-processing to fabricate multiple thermal interface layers 30 at once.
Next, as shown in the upper right-hand portion of the figure, the composite material 42 is introduced into the pores 40 of the porous structure 38 to form a blank frame 64. In one example, the composite material 42 is introduced using a screen printing process. For instance, the composite material 42 is heated to a liquid in the screen printing process and the liquid is then dispensed into the pores 40. The liquid then cools and solidifies so as to be retained in the pores 40. The printing may be repeated over multiple iterations to completely fill the pores 40. In this regard, the carrier sheet 62 serves as the “floor” of the pores 40 to support the liquid in the pores 40 prior to cooling into solid form.
Next, an interior region 66 of the blank frame 64 is removed, as shown in the lower right-hand portion of the figure. For example, the interior region 66 is removed using a stamping process, although other removal techniques could alternatively be used. The removal of the interior region 66 creates the interior opening 34 c.
Finally, as shown in the lower left-hand portion of the figure, the thermal conductance pane 36 is inset into the containment frame 34. The insetting includes placing the thermal conductance pane 36 in the interior opening 34 c. The geometry of the interior opening 34 c is approximately the same as the geometry of the thermal conductance pane 36 such that the thermal conductance pane 36 fits closely into the interior opening 34 c. The containment frame 34 may be heated such that the composite material 42 reflows around the side edges 36 c of the thermal conductance pane 36, to secure the pane 36 to the frame 34.
The resulting thermal interface layer 30 may then be provided for assembly into the electronic device 20. For instance, the thermal interface layer 30 may remain on the carrier sheet 62 after fabrication. A pick-and-place machine may then be used to remove the thermal interface layer 30 from the carrier sheet 62 and place it on the thermal dissipation device 32 or on the topside of the IC chip 24. The thermal interface layer 30 may be heated during the placement process to tackify the composite material 42 so that the thermal interface layer 30 adheres to the thermal dissipation device 32 or IC chip 24.
Although a combination of features is shown in the illustrated examples, not all of them need to be combined to realize the benefits of various embodiments of this disclosure. In other words, a system designed according to an embodiment of this disclosure will not necessarily include all of the features shown in any one of the Figures or all of the portions schematically shown in the Figures. Moreover, selected features of one example embodiment may be combined with selected features of other example embodiments.
The preceding description is exemplary rather than limiting in nature. Variations and modifications to the disclosed examples may become apparent to those skilled in the art that do not necessarily depart from this disclosure. The scope of legal protection given to this disclosure can only be determined by studying the following claims.

Claims (18)

What is claimed is:
1. An electronic device comprising:
a printed circuit board supporting an integrated circuit (IC) chip; and
a thermal interface layer configured to transfer thermal energy from the IC chip,
the thermal interface layer including
a porous mesh and a polymer disposed in pores of the porous mesh, the porous mesh and the polymer defining a containment frame that is a border defining outside edges and inside edges, the inside edges circumscribing an interior opening, and
a thermal conductance pane inset in the interior opening of the containment frame, and outside edges of the thermal conductance pane are secured to the inside edges of the border.
2. The electronic device as recited in claim 1, wherein the polymer is a composite with non-electrically conductive particles disposed in the polymer.
3. The electronic device as recited in claim 2, wherein the non-electrically conductive particles are selected from the group consisting of alumina, boron nitride, aluminum nitride, and combinations thereof.
4. The electronic device as recited in claim 3, wherein the composite material includes, by weight, less than 5% of the non-electrically conductive particles.
5. The electronic device as recited in claim 4, wherein the composite material has a softening point of 40° C. to 70° C.
6. The electronic device as recited in claim 1, wherein the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
7. The electronic device as recited in claim 1, wherein the mesh is formed of at least one of glass fibers or polymer fibers.
8. The electronic device as recited in claim 1, wherein the thermal conductance pane is flush with the containment frame.
9. The electronic device as recited in claim 1, wherein the thermal conductance pane include unidirectionally oriented fibers.
10. The electronic device as recited in claim 9, wherein the thermal conductance pane is planar and the unidirectionally oriented fibers are orthogonal to the thermal conductance pane.
11. The electronic device as recited in claim 1, wherein the porous mesh is a three-dimensional structure.
12. The electronic device as recited in claim 1, wherein the thermal conductance pane includes a planar heat-input surface and a planar heat-output surface, and except for the outside edges of the thermal conductance pane, the mesh and polymer are absent from the planar heat-input surface and the planar heat-output surface.
13. A thermal interface layer for transferring thermal energy from an integrated circuit chip, comprising:
a porous mesh and a polymer disposed in pores of the porous mesh, the porous mesh and the polymer defining a containment frame that is a border defining outside edges and inside edges, the inside edges circumscribing an interior opening; and
a thermal conductance pane inset in the interior opening of the containment frame, and outside edges of the thermal conductance pane are secured to the inside edges of the border.
14. The thermal interface layer as recited in claim 13, wherein the polymer is a composite material with non-electrically conductive particles disposed in the polymer.
15. The thermal interface layer as recited in claim 14, wherein the composite material has a softening point of 40° C. to 70° C.
16. The thermal interface layer as recited in claim 13, wherein the thermal conductance pane is composed of a thermally conductive material selected from the group consisting of copper metal, aluminum metal, graphite, and combinations thereof.
17. A method for fabricating a thermal interface layer, the method comprising:
providing a containment frame that is non-electrically conductive, wherein the containment frame is a border that defines outside edges and inside edges, and the inside edges circumscribe an interior opening; and
insetting a thermal conductance pane in the interior opening of the containment frame, and outside edges of the thermal conductance pane are secured to the inside edges of the border, the containment frame being comprised of a mesh defining pores and a polymer filling the pores.
18. The method as recited in claim 17, wherein the providing includes introducing the polymer into the pores of the mesh to form a blank frame.
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US20210111096A1 (en) 2021-04-15

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