UA92531C2 - Device for conversion of shf energy to industrial-frequency alternating current - Google Patents

Abstract

A device for conversion of SHF energy to industrial-frequency alternating current relates to energetics, in particular to space energetics. The device comprises a semiconductor structure installed on a section of rectangular waveguide. The section is made from a plate with circular or quasi-squire cross-section, made of homogeneous doped material having differential conductivity with metallized contact surfaces – electrodes faced to wide walls of the rectangular waveguide. One of electrodes is inserted through blocking transformer connected to a DC voltage source, a second one – to oscillating contour, resonant frequency of which corresponds one of industrial-frequency. Physical parameters of semiconductor material, geometrical dimensions of the semiconductor plate and frequency of converted SHF signal are connected by following proportion:,,,, where nconcentration of electrons in plate material, L- size of the semiconductor plate in direction coinciding with direction of current, i.e. distance between electrodes, ρ- specific resistance of semiconducting material, f1 and f2 – frequences of SHF signal, levels of 2450 MHz и 5800 MHz. The technical result is reliability growth and improving output-input ratio, design simplification.

Description

However, the annual average is not high enough and is difficult enough; complex in design and in the rgy of solar radiation on the territory of Ukraine (the location is also a node for the introduction of microwave energy in electrified between 45 and 52 degrees north latitude), ron flow. The presence of a cathode in the device, which is estimated at only 4 kilowatt-hours per square meter, is heated with a powerful emission of electrons, and a significant seasonal irregularity sharply reduces the resource of the converter. In addition, the intensity of light energy reaching the surface of the Earth (maximum values - from 1000 direct current energy, which has a limited number of watts per square meter in the summer months to 250 watts of use) dots per square meter in the winter months), as well as the tax converter of direct current in the narrowing of the spectral composition of the reaching earth variable, which complicates and makes more expensive the system of crossing the surface of solar radiation due to fluorescence in general and leads to a decrease in co-filtering properties of the polluted atmosphere of the useful agent. tno make it difficult to use solar radiation, which is converted into a constant current by photoelectric converters using vacuum rectifier diodes. Z. District. M.: Peace, created on the surface of the Earth. 1971, TL, p. 407; IEEE-MTT-Ipiegp. Misgomame Tomorrow,

Therefore, it was put forward in the 50s and 60s (Kapitsa P.L. 1976, R.142-144). Although by the size of the processed

High power electronics. M.: Izd-vo AN microwave signal single vacuum diode forward-

USSR, 1962, as well as earlier US patents for a converter operating on the effect of cyclo-

MeMob685.956, 787.412, 1119732, etc.| and modified resonance, the possibility of serial connection in the later period (US Pat. Me5.068.669 of parallel connection of a large number of diodes in (1991) Me5.218.374 (1993) Meo5.293.176 (1994); the matrix allows partially simplify and cheapen

Izvestiya Akademii Nauk, series Znergetika, M., construction of the ground receiver-rectifier 2004, p. 3-25; pErulymlyu.p-so5tov.gy/raregv systems - rectens (from the English hesiyu - to straighten and /KIO1.piti| the concept of orbital solar elect- apieppa). roenergetics, which includes the conversion of solar However, the problem of low durability of lamps, energy into direct current and then with the help of on orbital vibrations of large-sized anodes and cathodal platform - in microwave energy, which in the form of yes, imposes serious restrictions on the use of these focused radio beams is transported to devices. And in general - specified technical solutions for

Earth for further transformation into a permanent transformation of microwave energy into a supply voltage with current, allows you to solve the problem of effective use of vacuum devices lying outside the use of solar radiation. highways of the development of modern technology

The introduction of such technology is relevant for already existing electronics, which is based on the use of various physical effects in the half-growing energy deficit - at the expense of poisons. The production of large (megawatt and gigawatt) power values is the closest in terms of technical essence and result, mainly due to the use of what is achieved, to the claimed invention of solar radiation. At the same time, the unsolved task is (prototype), there is a semiconductor converter that converts high-density microwave energy into direct current energy, which can be converted directly into industrial current. a semiconductor element in the form of a diode with

A well-known electronic microwave converter, in the Schottky barrier, is installed in the wave segment, which uses the phenomenon of cyclotron water and is connected through filtering devices to the resonance of electrons, namely, the microwave emitted by a source of alternating voltage and a resistor, which is a tire, interacting with the flow of charge carriers with an electron load (Abstracts of reports X of the All-Union gun, provides cyclotron rotation of the scientific conference, September 20-23, 1983, Ministry of Electrons, and in the field of the cylinder electrode, in sk, 6.252-253 - report "Analytical analysis of along the axis of which the electron flow passes on its way to the semiconductor rectifier of the barrier electrode and then to the collector, the prototype device is structurally uncomplicated, the transformation of the rotational energy of the electron is easy to fit into the structure of the rectena, and protons into the energy of their translational motion Power, the possibility of its functioning only at small constant electric currents is allocated at the input levels ny microwave power, so that even a non-resistor (load) located in the circuit, an over-normative increase in power or a fuse connecting the collector to the cathode of the electronic value of the resistance of the load leads to coincidence (Izvestia VUZov. Radio electronics. - reduction of microwave signal losses and, accordingly, to the reduction of 1978, T.XXI Me10, p.96-1001. efficiency ratio, as well as before the occurrence of

The obvious difficulty of such a method of overturning the breakdown of the barrier is due to the increase in the return absorption of microwave energy and the device that implements it: the voltage on the barrier, which reduces the reliability of the functional longitudinal magnetic field, which is required to connect the rectifier. In addition, the need for communization of cyclotron resonance must have a large number of modules that are part of a very complex configuration; the power supply system of the rectenna, due to the low specific power of the focusing electrodes, the cylinder electrode with (units of watts) and the low output specific voltage of the accelerating potential and the barrier electrode (1...4 V), significantly reduces the reliability of the entire receiving-rectifying system even with oscillating current circuit of industrial frequency minor overloads due to avalanche in the block of constant voltage. breakdown, and the need to convert the constant Fulfillment of the condition on the product of the concentration into an alternating current by introducing additional tration of charge carriers (electrons) of the semiconductor inverting voltage complicates the design and reduces the efficiency of the system by the length of the semiconductor material. structures I. ensures the implementation of the mechanism between

The proposed invention is based on the task of increasing the reliability and coefficient of the electron transfer mechanism, which leads to the formation of a semiconducting effect in the volume while simultaneously simplifying the structure of the negative differential conductivity. field strengths of 2...7 kV/cm and the occurrence of electric

The problem is solved by the fact that in the river domain instability, which ensures the emergence of a device for converting microwave energy into a variable external (at the terminals) negative conductivity current, which contains a semiconductor element, a semiconductor structure. installed in the waveguide segment and connected The specified interval of the longitudinal geometric through the filtering devices to the source of variable size of the semiconductor structure corresponds to the voltage, according to the invention as a semi-real value of the density of the microwave power, that of the element used by the semiconductor- enters the rectenna, and, accordingly, the voltage metal structure, preferably in the form of a circular or ultra-high-frequency electric field, which is quasi-square in the cross-section of the plate, winds in the waveguide line, when it is actually reachable from a homogeneously doped material with negative values of the power of microwave radiation, differential conductivity, which is provided by / photo-microwave - metallized contact surfaces - electric power plants or transported between the nasemrods, facing the wide walls of the section by the points of microwave power generation and its rectangular waveguide, at the same time one with electric generators. types through the introduced blocking choke connected The interval of the value of the specific resistance p is half-open to the source of constant voltage, the second - of the material of the plate connecting the concen- to the oscillating circuit, the resonant frequency of the concentration and mobility of the charge carriers, determined for the corresponding at one of the industrial frequencies, with all known semiconductors, the electrophysical parameters of the semiconductor materials of this group (gallium arsenide, phosphide of another material, geometric dimensions of the semiconductor, cadmium telluride, etc.), nickel plate production technology and the frequency of the converted microwave which are sufficiently well mastered and in which the signal can be connected by correlations: the intervalley transfer of electrons is realized and approx. -(15..45).1 09 cm" negative differential conductivity). 0 (24..95).109 s cm The ratio between the concentration of electrons

But I - (5..20) mm in the semiconductor material and the frequencies of the converted microwave signal suggest the use of (02..0.6) Ohm. cm I | Scanning of two radiation frequencies - 2450 MHz and l de po - concentration of carriers 5800 MHz, allocated by the International Commission on charge (electrons) in the material of the plate, GI. - electrical connection for use in technology measures of a semiconductor plate in the direction, co-productions and which are used in the development with the direction of the current (the distance between the electronics of solar space power plants, welding rods), p - the specific resistance of the semiconductor due to the significant radio transparency of the atmosphere for the material, y and yb are the frequencies of the microwave signal, the levels of these frequencies of radiation of PEEE Misgozhame Mad., 24А50MHz and 5800MHz. 2002, Mo. 1, p. 36-42; journal Technology and design

Placement of the semiconductor structure in electronic equipment, 2007 Meb, pp. 12-15). important in the form of a round or quasi-square The design features of the plate are listed in such a way that the contact surfaces are smooth and the relationships of the electrophysical and reap in the plane of the wide walls of the rectangular wave- geometric parameters of the volume semiconductor conductor, an electrical component in which for of the frame structure and parameters of the converted Nio mode lies in the plane of the transverse microwave signal, obtained in carefully made sections and parallel to the narrow walls of the waveguide, theoretical and experimental studies, ensures the collinearity of the fields - constant and over-aimed to ensure the occurrence of calls - a high-frequency, effective control of the local (at the terminals of the semiconductor structure) influence of the microwave field on the nature of the formation of the negative conductivity and the occurrence of self-oscillations of the domain instability in the volume of the semiconductor connected to the semiconductor structure, including making it possible to provide an oscillating circuit, the natural frequencies of which correspond to the mode in which the reactive component of the conductivity is known as the generally accepted value of the frequencies of the semiconductor structure is minimal and for industrial networks: 50, 60, and 400Hz, while ensuring the necessary matching of the oscillation form should be the maximum of the semiconductor structure with waveguide line - close to sinusoidal. the latter is important from the point of view of obtaining high In Fig. 1 is shown the electrical diagram of the purpose of the efficiency of the device. system for converting microwave energy into alternating current

The blocking choke connecting the post-industrial frequency block, Fig. 2 shows a graphic of the voltage with a semiconductor structure, a construction that illustrates the mechanism of the formation of zov- serves to prevent the negative conductivity developed in it from entering, Fig. 3 shows the oscillograms of oscillations , which occur in the low voltage of which leads to a drop in the current during the increasing oscillating circuit, where 1 is a low-voltage source, so that the volt-ampere characteristic is a constant voltage, 2 is a blocking choke, Z - the (VAX) of the semiconductor structure has the form of segments of a rectangular waveguide, 4 - movable co-distorted letter M (M-shaped IAC) and to the arising-closer piston, 5 - filter of lower frequencies of negative differential conductivity, 0 - tot, 6 - semiconductor structure, 7 - oscillatory circular frequency , Ii - time. nth contour; M, | - the voltage on the semiconductor As it is not difficult to show, the average value of the density structure and the current through it, Imax - the maximum () value of the current, Imin - the minimum value of the string of current "7 flowing through the semiconductor, Ot - the amplitude of the ultra-high-frequency voltage, in the structure due to the applied to it, which develops in the waveguide due to translational ultra-high-frequency voltage, there may be microwave power, Okr - the critical value is determined from the integral equation: stripes on the semiconductor structure, the excess () -- Ysp(Oo Ot sovoya )doi CHO. Y 25) to, hl 0 gl 0 a Ts, sovoya () sp - 00 Ot sovoya to be improved due to increasing the Q-factor - so that the specific conductivity t ; those of the circuit, and modern technologies for obtaining matter - films with high-temperature superconductivity, which is a function of constant ("supporting") voltage, can satisfy this condition.

Sho and ultra-high-frequency voltage Otso5oi, is a negative Since the negative differential conductive at large amplitudes ultra-high-frequency for the most developed by the industry of mine voltage, and the semiconductor structure has terial - gallium arsenide (production in Ukraine) external (at the terminals) negative resistance, the material was mastered by JSC "Pure Metals" in the city of The world is negative, both static and differential- (Lovodsk, Kirovohrad region) covers the diaphanous resistance. zones of electric fields up to ZOkV/cm, then for semi-

Therefore, if an oscillating circuit is connected to a semiconductor structure, a channel structure with a longitudinal dimension of 10 mm having an external negative conductivity, installed in a section of the waveguide, it is possible to cross it (with transverse dimensions of 90x22.5 mm) to obtain a voltage at the resonant frequency of the circuit, on frequency 2450 MHz) while ensuring reliable, including at industrial frequencies. heat removal from the semiconductor structure

Conducted experimental studies of the possible transformation of a microwave signal by the power of converter samples, in which the microwave sources are up to 500 kW with an efficiency of 80-9095. The 2450 MHz signal was served by magnetrons, even if to ensure reliable functioning - type SA M-1, produced by the domestic electrification of the device by preventing breakdowns in the semiconductor structure by the electronic industry - the State Enterprise of the "Generator" VO "Octava" "; to the semiconductor source distribution of the electric field, the input microwave structures were made of single-crystal ar- the power is limited to 100 kW, then in this case also gallium cenide of the Mopzapio company (USA) with a carefully matrix of several hundreds of serially-measured parameters - concentration and movement- of parallel-connected rectifier diodes from electron permeability; Schottky's metal contact surfaces according to the prototype device in practical (electrodes) structures were made in plasma implementations of rectenes, it is possible to replace one mo- condensate method (journal. Instruments and Techniques with a nozzle-transducer according to the invention that declares-experiment, 1972, Mo3, p. .243-245, author Pogoreliy yetsya.

V.A. and others; movable short-circuiting piston. It is possible to connect the modules in parallel, which serves to align the semiconductor converters, and to avoid the transfer of the structure with the waveguide line and to ensure the microwave power bit from the incompletely matched high fixing ability of the device, manufactured with the waveguide line of the semiconductor structure according to technology presented in a. with. USSR, the converter can be built according to the

Mo1427445, blvd. Me36b, 1988, author. Sokolovsky I.I. scheme, and a part of the microwave power that does not take etc., in general, confirmed the basic provisions that participation in the transformation into a current of industrial frequency- declared in the invention. you, in the bridge circuit can be transformed without-

Fig. 3 presents oscillograms of the voltages, which indirectly into the heat, which thus provides, developed in the oscillating circuit at a frequency of full use of microwave power, which is 50 Hu (upper oscillogram) and at a frequency of 60 Hz (descending from the orbital photo- microwave power plants. oscillogram), while during the design The developed microwave power converter in the circuit the latter was optimized in terms of the current of the industrial frequency, as well as the cosmic photo- self-Q factor at a frequency of 50Hz, and its func- Microwave energy as a whole, has a huge potentiation at the frequency b0 Hz (American development station: using an intense stream of darts) was provided by adjusting the amount of solar radiation existing on the geostationary inductance of the same circuit. onary orbit (more than 1.4 kW/m2) with high content

As can be seen, the form of oscillations at both frequencies of the spectrum sections, effectively converted into as close as possible to sinusoidal and can electricity, manages to transmit the received energy to the surface of the Earth continuously - regardless of the radiation which allows to form the time of day and weather conditions. Due to the inclination of high-intensity microwave radiation from the vatorial plane to the ecliptic plane under the set of such sources using the technology of phased angle 23.57 space platform on geostationary antenna arrays and accurately direct them to the Earth. ny orbit with appropriately placed photo- Ukraine has a rocket and space industry with technology- electrical converters constantly illuminated deployment of large-sized objects in space with the flow of solar radiation and only in small tives, and although commercial projects require the creation of periods of time ( near the days of the spring and autumn rocket carriers of a new type, currently in use, accounting for less than 195 of the total melting of existing means of delivering goods on the geo- duration of the year and these days can be easily pre-stationary orbits can accumulate significant tech- seen) the space platform falls into the shadow Geological experience and prepare the basis for the li. formation of commercial photovoltaic energy

Serial production of photo-getic systems has been mastered in Ukraine. electric converters (NVO "Kvazar", Ky- The developed converter of microwave energy in ev), capable of working in open space conditions, the technical frequency current can be useful magnetrons - an important component of space and at all stages of the formation of solar space photo-microwave power plants - with an output power and energy. unit 6 kW (type SHA M-3, VO "Octava", Kyiv), cogerek 2 5

Kish tons of Z

What the hell?

Iv / A m KI Ya

Ryvch ' SHE: nan PIN g g | Ov t! I ! and

And ii e ; : K. OK nno we and Yi nia kerennnnnnia!

Yi dune ptn tt token ns pd penyu tia jalo pnia pya given pt pal chan channia channia I fig. 1 and max t i ! and і her І only ssh shi ul S;

TUSH deglny niny y "Ukr Gl don Nk i sha -- yr. tov - i Okh i Oroth i

Fig. and

Her nn in s; 1

In U. nya

IOV

IRO with; o in o o and her c

ON

KO Ko ek nn i y 5. fig.

Computer layout L. Kupenko Signature Circulation 26 approx.

Ministry of Education and Science of Ukraine

State Department of Intellectual Property, str. Urytskogo, 45, Kyiv, MSP, 03680, Ukraine

SE "Ukrainian Institute of Industrial Property", str. Glazunova, 1, Kyiv - 42, 01601