TWM662582U - Semiconductor device and semiconductor apparatus - Google Patents

Abstract

The present disclosure provides a semiconductor device and a semiconductor apparatus. The semiconductor device includes a first semiconductor structure with a first sidewall, a second semiconductor structure located on the first semiconductor structure, an active structure located between the first semiconductor structure and the second semiconductor structure, a first contact part located on the first semiconductor structure, and the first contact part has a second sidewall, the second sidewall and the first sidewall are aligned with each other in a vertical direction, a first electrode located on the first contact part and electrically connected with the first semiconductor structure, and a second electrode located on the second semiconductor structure and electrically connected with the second semiconductor structure.

Description

Semiconductor components and semiconductor devices

The present disclosure relates to a semiconductor device, in particular to a semiconductor device capable of emitting light.

Light-emitting diodes (LEDs) have the characteristics of low power consumption, low heat generation, long operating life, impact resistance, small size, and fast response speed. Therefore, they are widely used in various fields that require the use of light-emitting components, such as vehicles, home appliances, display screens, and lighting fixtures. In particular, LEDs are a type of monochromatic light, and as pixels in displays, they can achieve excellent contrast and color saturation. However, there are still some problems to be solved in current LED displays. For example, there is still room for improvement in the structural configuration of LEDs or their brightness per unit area.

In view of this, in order to solve the above problems, the embodiment disclosed herein provides a semiconductor device.

In one embodiment of the present disclosure, a semiconductor element is provided, comprising a first semiconductor structure having a first side surface, a second semiconductor structure located on the first semiconductor structure, an active structure located between the first semiconductor structure and the second semiconductor structure, a first contact portion located on the first semiconductor structure, and the first contact portion has a second side surface, the second side surface and the first side surface are mutually aligned in a vertical direction, a first electrode located on the first contact portion and electrically connected to the first semiconductor structure, and a second electrode located on the second semiconductor structure and electrically connected to the second semiconductor structure. The first electrode has a first top-view area, and the first contact portion has a second top-view area that is smaller than the first top-view area.

In another embodiment of the present disclosure, a semiconductor element is provided, comprising a first semiconductor structure, wherein the first semiconductor structure viewed from above comprises a body and a protrusion, wherein the body comprises a first edge, and the protrusion protrudes from the first edge in a horizontal direction, a second semiconductor structure located on the first semiconductor structure, an active structure located between the first semiconductor structure and the second semiconductor structure, a first contact located on the first semiconductor structure, a first electrode located on the first contact and electrically connected to the first semiconductor structure, and a second electrode located on the second semiconductor structure and electrically connected to the second semiconductor structure.

The feature of the present disclosure is to provide a semiconductor element with a better configuration, wherein the first semiconductor structure of the semiconductor element can selectively include a protrusion, the contact portion formed above the first semiconductor structure can selectively be arranged on the protrusion, and the side surface of the contact portion can selectively be aligned with the side surface of the protrusion, so that the contact portion of the semiconductor element can be closer to the side surface of the first semiconductor structure, so that the light emitting area of the semiconductor element is larger. The overall structural configuration of the semiconductor element disclosed in the present disclosure can more effectively utilize space, increase the light emitting efficiency per unit area, and improve product quality.

10: Semiconductor devices

100:Semiconductor components

110: First semiconductor structure

1101: Long side

1102: Short side

120: Second semiconductor structure

130: Active structure

140: First contact part

142: Second contact part

150: Protective layer

151: First opening

152: Second opening

160: First electrode

162: Second electrode

200:Semiconductor components

300:Semiconductor components

400:Semiconductor components

B1: The first entity

B2: Second entity

D: Distance

E1: First edge

E2: Second Edge

E3: The Third Edge

E4: The Fourth Edge

E5: The Fifth Edge

E6: The Sixth Edge

G1, G2: Spacing

I: Middle layer

L1: first length

L2: Second length

P1: First protrusion

P2: Second protrusion

S1: First side

S2: Second side

S3: The third side

sub: base

In order to make the following easier to understand, the drawings and their detailed text descriptions can be referred to at the same time when reading this disclosure. Through the specific embodiments in this article and reference to the corresponding drawings, the specific embodiments of this disclosure are explained in detail and the working principles of the specific embodiments of this disclosure are explained. In addition, for the sake of clarity, the features in the drawings may not be drawn according to the actual scale, so the size of some features in some drawings may be deliberately enlarged or reduced.

Figure 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.

FIG. 2A is a partial top view schematic diagram of a semiconductor device according to the embodiment of FIG. 1.

FIG. 2B is a schematic top view of the first semiconductor structure of the semiconductor element according to the embodiment of FIG. 1.

FIG. 3 is a schematic top view of a semiconductor device according to the embodiment of FIG. 1 of the present disclosure.

Figure 4 is a schematic cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

FIG. 5 is a schematic top view of a semiconductor device according to the embodiment of FIG. 4.

Figure 6 is a top view schematic diagram of a semiconductor device according to another embodiment of the present disclosure.

Figure 7 is a top view schematic diagram of a semiconductor device according to another embodiment of the present disclosure.

Figure 8 is a cross-sectional schematic diagram of multiple semiconductor elements located on a substrate according to another embodiment of the present disclosure.

The present disclosure provides several different embodiments that can be used to implement different features of the present disclosure. For the purpose of simplifying the description, the present disclosure also describes examples of specific components and arrangements. The purpose of providing these embodiments is only for illustration and not for any limitation. Various embodiments in the present disclosure may use repeated reference symbols and/or text annotations. The use of these repeated reference symbols and annotations is to make the description more concise and clear, rather than to indicate the relationship between different embodiments and/or configurations.

In addition, for the spatially related descriptive terms mentioned in this disclosure, such as "lower", "upper", "top", "bottom" and similar terms, for the convenience of description, their usage is to describe the relative relationship between one element or feature and another (or multiple) elements or features in the drawings. In addition to the orientation shown in the drawings, these spatially related terms are also used to describe the orientation of each element during use and operation. As the orientation of each element is different (rotated 90 degrees or other orientations), the related descriptions used to describe its orientation should also be interpreted in a similar manner.

Although the present disclosure uses the terms first, second, third, etc. to describe the components, layers, and/or structures, it should be understood that the components, layers, and/or structures should not be limited by these terms. These terms are only used to distinguish a certain component, layer, and/or structure from another component, layer, and/or structure, and they do not imply or represent any previous sequence of components, nor do they represent the order of arrangement of a certain component and another component, or the order of manufacturing methods. Therefore, without departing from the scope of the specific embodiments of the present disclosure, the first component, layer, or structure discussed below can also be referred to as the second component, layer, or structure.

The term "electrical connection" mentioned in this disclosure includes any direct and indirect electrical connection means. For example, if the text describes that a first component is electrically connected to a second component, it means that the first component can be directly electrically connected to the second component, or indirectly electrically connected to the second component through other devices or connection means.

Although the following describes the novelty of the present disclosure through specific embodiments, the novelty principle of the present disclosure can also be applied to other embodiments. In addition, in order not to obscure the spirit of the present disclosure, certain details will be omitted, and the omitted details belong to the knowledge scope of those with ordinary knowledge in the relevant technical field.

FIG. 1 is a schematic cross-sectional view of a semiconductor device 100 according to an embodiment of the present disclosure. FIG. 2A is a semiconductor device according to an embodiment of the present disclosure, and only a partial structure is drawn (for example, the insulating layer and the electrode are not drawn). FIG. 1 is a schematic cross-sectional view of FIG. 2A along X1-X1'.

As shown in FIG. 1 , the semiconductor device 100 has a stacked structure, and the stacked structure includes a first semiconductor structure 110, a second semiconductor structure 120, and an active structure 130 disposed between the first semiconductor structure 110 and the second semiconductor structure 120. The first semiconductor structure 110 and the second semiconductor structure 120 are single-layer or multi-layer, and can be used as a confinement layer, or/and a carrier supply layer, or/and a current diffusion layer, or/and a contact layer in the semiconductor device 100. The first semiconductor structure 110 and the second semiconductor structure 120 can include semiconductor materials of different doping types to supply carriers (such as electrons or holes). In this embodiment, the first semiconductor structure 110 has a first conductivity type, and the second semiconductor structure 120 has a second conductivity type different from the first conductivity type. For example, the first semiconductor structure 110 includes a p-type semiconductor layer, and the second semiconductor structure 120 includes an n-type semiconductor layer to provide holes and electrons respectively; or, the first semiconductor structure 110 includes an n-type semiconductor layer, and the second semiconductor structure 120 includes a p-type semiconductor layer to provide electrons and holes respectively. The first semiconductor structure 110 and the second semiconductor structure 120 have the first conductivity type and the second conductivity type respectively, for example, by intentional doping or unintentional doping, so as to provide corresponding carriers to enter the active structure 130. In this embodiment, the first semiconductor structure 110 and the second semiconductor structure 120 may include III-V semiconductor materials, respectively. The III-V semiconductor materials may include Al, Ga, As, P or In. Specifically, the III-V semiconductor materials may be binary compound semiconductors (such as GaAs, GaP or InP), ternary compound semiconductors (such as InGaAs, AlInAs, AlGaAs, InGaP, AlInP, InGaN or AlGaN) or quaternary compound semiconductors (such as AlGaInAs, AlGaInP, InGaAsP, InGaAsN, AlGaAsP or AlInGaN). For example, the materials of the first semiconductor structure 110 and the second semiconductor structure 120 may include aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum gallium nitride (InAlGaN), etc.

The active structure 130 can be used as a light-emitting structure, so that the semiconductor device 100 can be a light-emitting device, and the wavelength of the light emitted by the light-emitting device depends on the material composition of the active structure 130. Specifically, the active structure 130 can include III-V semiconductor materials, for example, Al, Ga, In, As, or/and P, such as InGaAs, AlGaAsP, GaAsP, InGaAsP, AlGaAs, AlGaInAs, InGaP, AlGaInP, InGaN, AlGaN, or AlInGaN. The active structure 130 can emit infrared light with a peak wavelength between 700 nm and 2200 nm, red light with a peak wavelength between 610 nm and 700 nm, yellow light with a peak wavelength between 530 nm and 600 nm, green light with a peak wavelength between 530 nm and 570 nm, or ultraviolet light with a peak wavelength between 250 nm and 400 nm. In one embodiment, the active structure 130 is substantially composed of a ternary compound semiconductor (such as InGaAs, AlGaAs, InGaP, AlInP, AlGaN or InGaN) or a quaternary compound semiconductor (such as AlGaInAs, AlGaInP, InGaAsP or AlGaAsP). In some embodiments, the semiconductor device 100 may include a single heterostructure, a double heterostructure, a single quantum well structure, or a multiple quantum well structure (MQW). In some embodiments, the material of the active structure 130 may be an i-type, p-type, or n-type semiconductor. In the embodiment where the semiconductor device 100 includes a multiple quantum well structure, the active structure 130 includes one or more barrier layers and one or more quantum well layers, which are stacked alternately one or more times. A quantum well layer and a barrier layer in the active structure 130 may constitute a quantum well structure pair. In one embodiment, the material of the barrier layer includes, for example, gallium nitride or aluminum gallium nitride, and its composition chemical formula is AlGaN or GaN. In another embodiment, the material of the barrier layer includes, for example, aluminum gallium arsenide or aluminum indium gallium phosphide, and its composition formula is AlGaAs or AlGaInP.

Other material layers may also be inserted or added to the stacked structure of the semiconductor element 100 according to actual needs. For example, in addition to the material layers described above, the first semiconductor structure 110 and the second semiconductor structure 120 may also include other material layers such as an electron blocking layer or a stress adjustment layer. These related variations also fall within the scope of the present disclosure.

In this embodiment, the active structure 130 and the second semiconductor structure 120 do not completely cover the upper surface of the first semiconductor structure 110 (i.e., the surface facing the positive Z direction in FIG. 1), but cover part of the upper surface of the first semiconductor structure 110, so that another part of the upper surface of the first semiconductor structure 110 is still exposed, and the active structure 130 and the second semiconductor structure 120 are not covered. The semiconductor device 100 further includes a first contact portion 140 located on the exposed upper surface of the first semiconductor structure 110, a second contact portion 142 located on the upper surface of the second semiconductor structure 120, a first electrode 160 covering the first contact portion 140, and a second electrode 162 covering the second contact portion 142.

The first contact portion 140 and the second contact portion 142 can be used to electrically connect the first semiconductor structure 110 and the second semiconductor structure 120 to the first electrode 160 and the second electrode 162, respectively. Specifically, the first electrode 160 is located on the first contact portion 140, and directly contacts and is electrically connected to the first contact portion 140; the second electrode 162 is located on the second contact portion 142, and directly contacts and is electrically connected to the second contact portion 142. In this embodiment, the first electrode 160 only covers a portion of the first contact portion 140, that is, a portion of the upper surface of the first contact portion 140 is not covered by the first electrode 160, and the second electrode 162 completely covers the upper surface of the second contact portion 142. From a top view (as shown in FIG. 3 ), the first electrode 160 has a first top view area, the first contact portion 140 has a second top view area that is smaller than the first top view area, and the percentage of the second top view area to the first top view area is 5% to 30%.

The first contact portion 140, the second contact portion 142, the first electrode 160 and the second electrode 162 mentioned above may include a metal material, an alloy material or a conductive oxide material. Metal materials include chromium (Cr), gold (Au), aluminum (Al), copper (Cu), silver (Ag), tin (Sn), nickel (Ni), rhodium (Rh), platinum (Pt); alloy materials include germanium gold nickel (GeAuNi), benzene gold (BeAu), germanium gold (GeAu) or zinc gold (ZnAu); conductive oxide materials include indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (Zn ₂ SnO ₄ , ZTO), gallium doped zinc oxide (gallium doped zinc oxide, GZO), tungsten doped indium oxide (tungsten doped indium oxide) oxide, IWO), zinc oxide (ZnO) or indium zinc oxide (IZO). In some embodiments, the first contact portion 140, the second contact portion 142, the first electrode 160 and the second electrode 162 include, for example, a single-layer or multi-layer structure, such as a titanium/gold layer, a titanium/aluminum layer, a titanium/platinum/gold layer, a chromium/gold layer, a chromium/platinum/gold layer, a nickel/gold layer, a nickel/platinum/gold layer, a nickel/aluminum/titanium/gold layer, a chromium/titanium/aluminum/gold layer, a chromium/aluminum/titanium/gold layer, a chromium/aluminum/titanium/platinum layer or a chromium/aluminum/chromium/nickel/gold layer or a combination thereof.

The semiconductor device 100 further includes a protective layer 150 located on the first semiconductor structure 110 and the second semiconductor structure 120. The protective layer 150 covers and protects the first semiconductor structure 110, the second semiconductor structure 120 and the active structure 130 to prevent them from being exposed to air and being affected by external factors such as moisture or oxygen, thereby reducing performance. The protective layer 150 is an insulating material and can be transparent or reflective. The insulating material can include silicon oxide, titanium oxide, niobium oxide, aluminum oxide, silicon nitride, silicon oxynitride, and magnesium fluoride. In detail, if the semiconductor element 100 is a light-emitting diode and emits light in the direction of the second electrode 162 (i.e., light is emitted upward), the material selected for the protective layer 150 can be a transparent material, or the material of the protective layer 150 has a sufficiently low absorption rate for the light emitted by the light-emitting diode, so that the light can penetrate the protective layer 150. If the semiconductor element 100 is a light-emitting diode and emits light in the direction of the first semiconductor structure (i.e., light is emitted downward), the material selected for the protective layer 150 can have a high reflectivity, such as a Bragg reflector, and includes the above two different insulating materials stacked on each other.

The protective layer 150 has a first opening 151 exposing the first contact portion 140 and a second opening 152 exposing the second contact portion 142. The first electrode 160 is connected to the first contact portion 140 through the first opening 151, and the second electrode 162 is connected to the second contact portion 142 through the second opening 152.

In addition, the thickness of each material layer described above is not limited in this disclosure, and the thickness of each material layer can be adjusted according to actual needs. However, in some embodiments of this disclosure, the thickness of the first semiconductor structure 110 may be greater than the thickness of other material layers above (including the second semiconductor structure 120, the active structure 130, the first contact portion 140, the second contact portion 142, the protective layer 150, the first electrode 160 and the second electrode 162 and other components or material layers).

D

2μm的條件，即該距離D大於或等於0μm且小於或等於2μm。另外，第一凸出部P1與第一本體B1連接的第三邊緣E3可以與第二邊緣E2垂直或是不垂直，當第三邊緣E3與第二邊緣E2相互垂直時，代表第一凸出部P1可能具有垂直邊角形狀，此時距離D等於第三邊緣E3的長度。而當第三邊緣E3與第二邊緣E2不垂直時，代表第一凸出部P1可能具有正梯形形狀或倒梯形形狀。另外，在其他實施例中，第一凸出部P1可為具有圓角的形狀。在本實施例中，第一半導體結構110的第一本體B1具有一長邊1101及一短邊1102，第一方向為平行於短邊1102方向，第二方向為平行於長邊1101方向。第一凸出部P1在第一方向的長度短於第一本體B1的短邊的長度，例如在本實施例中，第一凸出部P1在第一方向的長度為第一本體B1短邊長度的5%至90%。 The first semiconductor structure 110 of the present embodiment has a first body B1 and a first protrusion P1. As shown in FIGS. 1, 2A and 2B, the first protrusion P1 extends outward from one edge of the first body B1 and protrudes from the edge. In more detail, the first body B1 has a first edge E1 extending along a first direction (e.g., Y direction), and the first protrusion P1 protrudes from the first edge E1 of the first body B1 along a second direction (e.g., X direction). The first protrusion P1 has a second edge E2 and a third edge E3, the second edge E2 extending along the first direction (e.g., Y direction), and the third edge E3 extending along the second direction (e.g., X direction). In some embodiments, the first edge E1 and the second edge E2 may be parallel or non-parallel to each other when viewed from the top. In this embodiment, the first protrusion P1 protrudes from the first edge E1 along the second direction by a distance D, that is, the distance between the second edge E2 and the first edge E1 can be defined as the distance D, and the distance D satisfies 0 μm.

D

2μm, that is, the distance D is greater than or equal to 0μm and less than or equal to 2μm. In addition, the third edge E3 where the first protrusion P1 is connected to the first body B1 may be perpendicular to or not perpendicular to the second edge E2. When the third edge E3 and the second edge E2 are perpendicular to each other, it means that the first protrusion P1 may have a vertical corner shape, and the distance D is equal to the length of the third edge E3. When the third edge E3 and the second edge E2 are not perpendicular, it means that the first protrusion P1 may have a regular trapezoidal shape or an inverted trapezoidal shape. In addition, in other embodiments, the first protrusion P1 may have a rounded shape. In the present embodiment, the first body B1 of the first semiconductor structure 110 has a long side 1101 and a short side 1102, the first direction is parallel to the short side 1102, and the second direction is parallel to the long side 1101. The length of the first protrusion P1 in the first direction is shorter than the length of the short side of the first body B1. For example, in the present embodiment, the length of the first protrusion P1 in the first direction is 5% to 90% of the length of the short side of the first body B1.

D/(L1+D)×100%<15%。於上述條件，第一凸出部P1不會超出第一邊緣E1太多而影響其他製程條件，具有維持第一半導體結構110的結構穩定性或是與其他元件的相容性等優點。 In this embodiment, the second edge E2 is spaced apart from the first edge E1 by a distance D, and the first body B1 of the first semiconductor structure 110 has a first length L1 parallel to the long side 1101.

D/(L1+D)×100%<15%. Under the above conditions, the first protrusion P1 will not exceed the first edge E1 too much to affect other process conditions, and has the advantages of maintaining the structural stability of the first semiconductor structure 110 or compatibility with other components.

In this embodiment, from the cross-section of the semiconductor device 100 (as shown in FIG. 1 ), the first semiconductor structure 110 has a first side surface S1, the first contact portion 140 has a second side surface S2, and the first side surface S1 and the second side surface S2 are coplanar in the vertical direction (i.e., the Z direction in FIG. 1 ). In other words, viewed along the vertical direction, the first side surface S1 of the first semiconductor structure 110 and the second side surface S2 of the first contact portion 140 are aligned or aligned with each other. The first semiconductor structure 110 described herein includes a first protrusion P1, so the first side surface S1 of the first semiconductor structure 110 refers to the side surface of the first protrusion P1, which means that the side surface of the first protrusion P1 and the second side surface S2 of the first contact portion 140 are aligned with each other in the vertical direction. From the top view of the semiconductor device 100 (as shown in FIG. 2A ), a portion of the first contact portion 140 is located on the first protrusion P1. The first contact portion 140 has a fourth edge E4 aligned with the second edge E2 of the first protrusion P1, and has a fifth edge E5 aligned with the third edge E3 of the first protrusion P1.

The first contact portion 140 and the second contact portion 142 have a certain area, and for the subsequent component configuration, a portion of space needs to be reserved to accommodate the first contact portion 140 and the second contact portion 142. In practice, the distance G1 between the first contact portion 140 and the second semiconductor structure 120 cannot be too close, and a distance must be maintained to reserve process space to avoid short circuits. For example, the distance G1 is 0.3μm to 5μm. In the present disclosure, the position of the first contact portion 140 is moved closer to the first edge E1 to enlarge the light-emitting area of the semiconductor element 100. In detail, the first semiconductor structure 110 has a first protrusion P1 protruding from the first edge E1, and a portion of the first contact portion 140 is located on the first protrusion P1. In this way, while being compatible with the original process and maintaining the distance G1 between the first contact portion 140 and the second semiconductor structure 120, the area of the second semiconductor structure 120 and the active structure 130 can be enlarged (i.e., the second length L2 of the second semiconductor structure 120 is increased), so that the light-emitting area of the semiconductor element 100 can be increased. Compared with a semiconductor element without a protrusion, the light-emitting area of the semiconductor element 100 disclosed in the present invention can be increased by, for example, 3% to 10%.

FIG. 3 is a schematic top view of a semiconductor element according to an embodiment of the present disclosure and FIG. 3 is a schematic top view after the electrode is drawn in FIG. 2. As shown in FIG. 1 and FIG. 3, in this embodiment, the first electrode 160 has a third side surface S3 and a sixth edge (electrode edge) E6'. The sixth edge E6 extends along the first direction (e.g., the Y direction). The third side surface S3 is not aligned or coplanar with the first side surface S1 of the first semiconductor structure 110 or the second side surface S2 of the first contact portion 140 in the vertical direction (i.e., the Z direction in FIG. 1), that is, the sixth edge E6 of the first electrode 160 and the first edge E1 of the first semiconductor structure 110 still have a distance G2, for example, the distance G2 is 0.1μm to 5μm.

The first edge E1, the second edge E2, the third edge E3, the fourth edge E4, the fifth edge E5, and the sixth edge E6 refer to the boundaries of each component when viewed from the top view, and the first side S1, the second side S2, and the third side S3 refer to the side walls of each component when viewed from the cross-sectional view, which will be explained here first. In fact, the first side S1 is the second edge E2, the second side S2 is the fourth edge E4, and the third side S3 is the sixth edge E6.

The following will further describe other embodiments or variations of the semiconductor device disclosed herein. In order to simplify the description, the following description mainly describes the differences between the embodiments, and does not repeat the same parts. In addition, the same components in the embodiments disclosed herein are marked with the same reference numerals to facilitate comparison between the embodiments, and these components with the same reference numerals have the same materials and characteristics as the above embodiments.

FIG. 4 is a schematic cross-sectional view of a semiconductor device 200 according to another embodiment of the present disclosure, FIG. 5 is a schematic top view of a semiconductor device 200 according to another embodiment of the present disclosure, and FIG. 4 is a schematic cross-sectional view of FIG. 5 along X2-X2'.

In this embodiment, similar to the embodiment shown in FIG. 1, the semiconductor element 200 also includes the first semiconductor structure 110, the second semiconductor structure 120, the active structure 130, the first contact part 140, the second contact part 142, the protective layer 150, the first electrode 160 and the second electrode 162 and other elements or material layers, so they are not repeated.

The difference between this embodiment and the above-mentioned embodiment is that the third side surface S3 of the first electrode 160 of the semiconductor element 200 of this embodiment is aligned or coplanar with the first side surface S1 of the first semiconductor structure 110 or the second side surface S2 of the first contact portion 140 in the vertical direction (i.e., the Z direction in FIG. 4), so the overall structure of the first electrode 160 moves toward the boundary of the first semiconductor structure 110, covering less of the second semiconductor structure 120 and the active structure 130. When the semiconductor element 200 is a light-emitting diode and emits light from the top, this embodiment can further increase the light-emitting area of the semiconductor element 200.

In this embodiment, the first electrode 160 has a second body B2 and a second protrusion P2 protruding from the second body B2, and the second protrusion P2 is located above the first protrusion P1. When viewed from above, the sixth edge E6 of the first electrode 160 is also aligned with the second edge E2 of the first contact portion 140.

FIG. 6 is a schematic top view of a semiconductor device 300 according to another embodiment of the present disclosure. As shown in FIG. 6, the semiconductor device 300 also includes a first semiconductor structure 110, a second semiconductor structure 120, an active structure 130, a first contact portion 140, a second contact portion 142, a protective layer 150, a first electrode 160, and a second electrode 162, etc., and thus will not be repeated.

This embodiment is different from the above embodiment in that the fourth edge E4 of the first contact portion 140 is not aligned with the second edge E2 of the first semiconductor structure 110. Specifically, a portion of the first contact portion 140 may be located on the first protrusion P1, and another portion of the first contact portion 140 may be located on the first body B1. In another embodiment, the first contact portion 140 of the semiconductor element 300 is disposed on the first body B1 and is not located on the first protrusion P1.

Please refer to FIG. 7, which is a schematic top view of a semiconductor device 400 according to another embodiment of the present disclosure. As shown in FIG. 7, the semiconductor device 400 also includes a first semiconductor structure 110, a second semiconductor structure 120, an active structure 130, a first contact portion 140, a second contact portion 142, a protective layer 150, a first electrode 160, and a second electrode 162, etc., and thus will not be repeated.

The difference from the above embodiment is that the first semiconductor structure 110 of the semiconductor device 400 in this embodiment does not include the first protrusion P1, and the fourth edge E4 of the first contact portion 140 is aligned with the first edge E1 of the first semiconductor structure 110. In other words, from the cross-sectional view (not shown), the first side surface S1 of the first semiconductor structure 110 is vertically aligned with the second side surface S2 of the first contact portion 140, and the sixth edge E6 of the first electrode 160 may also be selectively aligned with the first edge E1 of the first semiconductor structure 110. In another embodiment, the sixth edge E6 of the first electrode 160 may be selectively not aligned with the first edge E1 of the first semiconductor structure 110, as shown in the cross-sectional structure of FIG. 1 . The above-mentioned variations are all within the scope of this disclosure.

FIG. 8 is a schematic cross-sectional view of a plurality of semiconductor devices 10 according to another embodiment of the present disclosure. As shown in FIG. 8 , the semiconductor device 10 includes a substrate sub and a plurality of semiconductor elements, and the semiconductor elements may be the above-mentioned semiconductor elements 100, 200, 300 or 400 or other variations. The material of the substrate sub is, for example, silicon, sapphire, glass, metal or other material layers that can be used for support. The semiconductor element described here is illustrated by taking the semiconductor element 100 shown in FIG. 1 as an example. A plurality of semiconductor elements 100 can be arranged in an array on the substrate sub. The function of the substrate sub described here is to support each semiconductor element 100. Some component numbers in FIG. 8 are not marked in detail, and the structure shown in FIG. 1 can be referred to. In other embodiments, a plurality of semiconductor elements may simultaneously include semiconductor elements 100, 200, 300, 400 of the above-mentioned different embodiments.

In addition, as shown in FIG. 8 , the semiconductor device 10 may also selectively include an intermediate layer I between the substrate sub and each semiconductor element 100. The function of the intermediate layer I is, for example, to serve as an adhesive layer or a release layer, so that when the semiconductor elements (such as light-emitting diodes) need to be transferred in large quantities to other electronic elements in the subsequent steps, the semiconductor elements can be more easily removed from the substrate sub. The material of the intermediate layer I here can be a polymer material or an inorganic material, such as Benzocyclobutene (BCB), epoxy, silicone or silicon nitride (SiN).

The feature of the present disclosure is to provide a semiconductor element with a better configuration, and the first semiconductor structure of the semiconductor element can selectively include a protrusion, the contact part can selectively be arranged on the protrusion, and the side surface of the contact part can selectively be aligned with the side surface of the protrusion, so that the light-emitting area of the semiconductor element is larger. The overall structural configuration of the semiconductor element disclosed in the present disclosure can more effectively utilize space, increase the light extraction efficiency per unit area, and improve product quality.

100:Semiconductor components

110: First semiconductor structure

120: Second semiconductor structure

130:Active structure

140: First contact part

142: Second contact part

150: Protective layer

160: First electrode

162: Second electrode

S1: First side

S2: Second side

Claims (10)

A semiconductor element comprises: a first semiconductor structure having a first side surface in a cross-sectional view; a second semiconductor structure located on the first semiconductor structure; an active structure located between the first semiconductor structure and the second semiconductor structure; a first contact portion located on the first semiconductor structure, and the first contact portion having a second side surface in a cross-sectional view, the second side surface The first side surface is aligned with each other in a vertical direction; a first electrode is located on the first contact portion and electrically connected to the first semiconductor structure; and a second electrode is located on the second semiconductor structure and electrically connected to the second semiconductor structure; wherein the first electrode has a first top-view area, and the first contact portion has a second top-view area that is smaller than the first top-view area. A semiconductor element as described in claim 1, wherein the first semiconductor structure comprises a body and a protrusion when viewed from above, the body having a first edge, and the protrusion protruding from the first edge. A semiconductor device as described in claim 2, wherein a portion of the first contact portion is located on the protruding portion of the first semiconductor structure. A semiconductor device as described in claim 2, wherein the protrusion protrudes from the first edge along a horizontal direction by a distance greater than or equal to 0 μm and less than or equal to 2 μm. A semiconductor element comprises: a first semiconductor structure, which comprises a body and a protrusion when viewed from above, wherein the body has a first edge and the protrusion protrudes from the first edge in a horizontal direction; a second semiconductor structure located on the first semiconductor structure; an active structure located between the first semiconductor structure and the second semiconductor structure; a first contact located on the first semiconductor structure; a first electrode located on the first contact and electrically connected to the first semiconductor structure; and a second electrode located on the second semiconductor structure and electrically connected to the second semiconductor structure. A semiconductor device as described in claim 5, wherein, viewed from above, the protrusion includes a second edge and a third edge connecting the first edge and the second edge, and the first contact portion has a fourth edge aligned with the second edge. A semiconductor device as described in claim 6, wherein the first electrode has an electrode edge aligned with the fourth edge when viewed from above. A semiconductor device as described in claim 6, wherein the second edge of the protrusion is not aligned with the fourth edge of the first contact portion when viewed from above. A semiconductor device as described in claim 5, wherein the first semiconductor structure includes a long side and a short side, and the horizontal direction is parallel to the long side. A semiconductor device comprises: a substrate; and a plurality of semiconductor elements located on the substrate; wherein one of the plurality of semiconductor elements comprises a semiconductor element as described in any one of claims 1 to 9.

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