TWM538240U - Heat dissipation sheet for integrated circuit - Google Patents
Heat dissipation sheet for integrated circuit Download PDFInfo
- Publication number
- TWM538240U TWM538240U TW105207313U TW105207313U TWM538240U TW M538240 U TWM538240 U TW M538240U TW 105207313 U TW105207313 U TW 105207313U TW 105207313 U TW105207313 U TW 105207313U TW M538240 U TWM538240 U TW M538240U
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- heat sink
- artificial graphite
- integrated circuit
- heat
- Prior art date
Links
- 230000017525 heat dissipation Effects 0.000 title description 14
- 229910021383 artificial graphite Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 239000010410 layer Substances 0.000 claims description 34
- 239000012790 adhesive layer Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910021382 natural graphite Inorganic materials 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本創作係有關於一種散熱片，特別是有關於使用在積體電路的散熱片。 This creation is about a heat sink, especially for heat sinks used in integrated circuits.
因為積體電路的高度發展，已從早期的微米製程進步到奈米製程，因此可以讓各種電子產品的體積越做越小。然而，積體電路越做越小，越來越密集時，積體電路的散熱能力就會成為一大問題，若積體電路所產生的熱無法有效的排出，會造成積體電路的效能降低。 Because of the high development of integrated circuits, it has progressed from the early micro-process to the nano-process, so that the volume of various electronic products can be made smaller. However, as the integrated circuit becomes smaller and denser, the heat dissipation capability of the integrated circuit becomes a big problem. If the heat generated by the integrated circuit cannot be effectively discharged, the performance of the integrated circuit is lowered. .
積體電路的散熱主要可藉由在積體電路晶片上裝設一散熱鰭片，而該散熱鰭片較佳為具良好散熱效果的金屬或金屬合金所製成，讓積體電路所產生的熱可以很快地傳導至金屬或金屬合金所製成的散熱鰭片上。例如，銅為具良好散熱效果的金屬，銅金屬的熱傳導係數(thermal conductivity)大約在400k左右，當積體電路所產生的熱量日益增加，且熱量產生的速度逐漸增快，光靠散熱較佳的金屬已不足以有效地將熱導出，而且散熱鰭片的體積較大，在積體電路微小化的過程中也日益不利使用。 The heat dissipation of the integrated circuit can be mainly provided by disposing a heat dissipating fin on the integrated circuit chip, and the heat dissipating fin is preferably made of a metal or a metal alloy with good heat dissipation effect, so that the integrated circuit generates Heat can be quickly transferred to the fins made of metal or metal alloy. For example, copper is a metal with good heat dissipation effect. The thermal conductivity of copper metal is about 400k. When the heat generated by the integrated circuit is increasing, the heat generation speed is gradually increased. The metal is not enough to effectively conduct heat, and the heat sink fins are bulky, and are increasingly disadvantageous in the process of miniaturization of integrated circuits.
除了金屬以外，天然石墨也具有高熱傳導的特性，其熱傳導係數大約在800K左右。透過將天然石墨與有機溶劑混合，再將所混合的塗料塗佈在銅或鋁所製成的金屬基材上形成散熱裝置，最後將該散熱裝置貼覆於積體電路上。天然石墨具有較佳的熱傳導係數，其大約在800k左右，可以提供較上述之散熱鰭片較佳的散熱效果，且可適用於微小化的積體電路。但是，由天然石 墨與有機溶劑混合的塗料在塗佈於基材後，使用一陣子之後很容易發生塗料裂化或脫落的問題，進而導致散熱裝置的熱傳導漸漸變差。 In addition to metals, natural graphite also has high heat transfer characteristics, and its heat transfer coefficient is about 800K. The heat sink is formed by mixing natural graphite with an organic solvent, coating the mixed paint on a metal substrate made of copper or aluminum, and finally attaching the heat sink to the integrated circuit. Natural graphite has a better heat transfer coefficient, which is about 800k, which can provide better heat dissipation effect than the above-mentioned heat sink fins, and can be applied to a miniaturized integrated circuit. But by natural stone After the coating of the ink and the organic solvent is applied to the substrate, the problem of cracking or falling off of the coating is likely to occur after a while, and the heat conduction of the heat sink is gradually deteriorated.
因此，需要針對上述之應用金屬散熱鰭片的缺點提供一種新式的散熱裝置，可以適用於微小化的積體電路，且散熱效果較佳。 Therefore, it is necessary to provide a new type of heat sink for the above-mentioned shortcomings of applying metal heat sink fins, which can be applied to a miniaturized integrated circuit, and has a better heat dissipation effect.
本創作的目的在提供一種用於積體電路的散熱片以改善現有之散熱片的散熱不佳且體積過大的問題。 The purpose of this creation is to provide a heat sink for an integrated circuit to improve the problem of poor heat dissipation and excessive volume of the existing heat sink.
根據上述的目的，本創作提供一種用於積體電路的散熱片，包含：一基材，由金屬材料所構成；一第一人工石墨導熱層，以真空濺鍍方式形成於該基材的第一表面。 According to the above object, the present invention provides a heat sink for an integrated circuit, comprising: a substrate composed of a metal material; and a first artificial graphite heat conducting layer formed on the substrate by vacuum sputtering. a surface.
本創作的另一目的在提供一種用於積體電路的散熱片，可防止散熱基材使用後會有裂化或脫落的問題產生。 Another object of the present invention is to provide a heat sink for an integrated circuit which can prevent cracking or falling off after use of the heat dissipating substrate.
根據上述的目的，本創作提供一種用於積體電路的散熱片，包含：一基材，由金屬材料所構成，該基材具有相對的第一表面及第二表面；一第一人工石墨導熱層，以真空濺鍍方式形成於該基材的該第一表面；一粘著層，其設置於該基材的該第二表面，且供黏著於一積體電路上。透過本創作的散熱片應用真空濺鍍等半導體製程形成第一人工石墨導熱層，因此不會有裂化或脫落的問題產生，且因為第一人工石墨導熱層厚度大約為100奈米可適用於微小化的積體電路。另外，本創作的散熱片是由金屬與人工石墨所組成，其熱傳導係數介於金屬與人工石墨之間，散熱效果相較於現有的金屬佳，其厚度也較現有的金屬所製成的散熱鰭片薄。 According to the above object, the present invention provides a heat sink for an integrated circuit, comprising: a substrate composed of a metal material, the substrate having opposite first and second surfaces; and a first artificial graphite heat conduction The layer is formed on the first surface of the substrate by vacuum sputtering; an adhesive layer is disposed on the second surface of the substrate and is adhered to an integrated circuit. The first artificial graphite heat conductive layer is formed by using a semiconductor process such as vacuum sputtering through the heat sink of the present invention, so that there is no problem of cracking or falling off, and since the first artificial graphite heat conductive layer has a thickness of about 100 nm, it can be applied to a small amount. Integrated circuit. In addition, the heat sink of the present invention is composed of metal and artificial graphite, and its heat transfer coefficient is between metal and artificial graphite. The heat dissipation effect is better than that of the existing metal, and the thickness is also higher than that of the existing metal. The fins are thin.
10‧‧‧散熱片 10‧‧‧ Heat sink
11‧‧‧基材 11‧‧‧Substrate
111‧‧‧第一表面 111‧‧‧ first surface
112‧‧‧第二表面 112‧‧‧ second surface
12‧‧‧第一人工石墨導熱層 12‧‧‧First artificial graphite heat conduction layer
13‧‧‧粘著層 13‧‧‧Adhesive layer
14‧‧‧積體電路 14‧‧‧ Integrated circuit
20‧‧‧散熱片 20‧‧‧ Heat sink
21‧‧‧基材 21‧‧‧Substrate
211‧‧‧第一表面 211‧‧‧ first surface
212‧‧‧第二表面 212‧‧‧ second surface
22‧‧‧第一人工石墨導熱層 22‧‧‧First artificial graphite heat conduction layer
23‧‧‧第二人工石墨導熱層 23‧‧‧Second artificial graphite heat conduction layer
24‧‧‧粘著層 24‧‧‧Adhesive layer
圖1為本創作第一實施例之散熱片的剖面示意圖。 1 is a schematic cross-sectional view of a heat sink according to a first embodiment of the present invention.
圖2為本創作另一實施例之散熱片與積體電路結合的剖面示意圖。 2 is a cross-sectional view showing the heat sink and the integrated circuit of another embodiment of the present invention.
圖3A~圖3C為本創作第一實施例之散熱片的製作剖面示意圖。 3A-3C are schematic cross-sectional views showing the fabrication of the heat sink according to the first embodiment of the present invention.
圖4為本創作第二實施例的散熱片的剖面示意圖。 4 is a schematic cross-sectional view of a heat sink according to a second embodiment of the present invention.
圖1為本創作第一實施例之散熱片的平面示意圖，如圖1所示，本創作的散熱片10包含基材11、第一人工石墨導熱層12與粘著層13。 1 is a schematic plan view of a heat sink according to a first embodiment of the present invention. As shown in FIG. 1, the heat sink 10 of the present invention comprises a substrate 11, a first artificial graphite heat conductive layer 12 and an adhesive layer 13.
散熱片10的基材11可以是純銅箔或是銅箔合金所製成，或者基材11也可以是純鋁箔或鋁箔合金所製成，任何具良好散熱效果的金屬薄片或金屬薄片合金都可作為本創作之基材11的材料。第一人工石墨導熱層12設置於該基材11的第一表面111。粘著層13設置於該基材11的第二表面112，或者粘著層13可以是一雙面膠，其一面粘著於基材11的第二表面112，另一面粘著於積體電路上。第一人工石墨導熱層12的厚度較佳在100±10奈米(nm)，其厚度可適合應用在積體電路，且第一人工石墨導熱層12在製作過程中無需使用有機溶劑，因此該第一人工石墨導熱層12不會在使用一段時間之後發生裂化或脫落的問題。然而，在不同實施例中，如圖2所示，散熱片10也可以只包含基材11與第一人工石墨導熱層12，而在需要散熱片10之積體電路的表面塗上具粘貼特性的材料，再將散熱片10放至固定於積體電路14的表面，在此並不侷限。 The substrate 11 of the heat sink 10 may be made of pure copper foil or copper foil alloy, or the substrate 11 may be made of pure aluminum foil or aluminum foil alloy, and any metal foil or foil alloy with good heat dissipation effect can be used. As the material of the substrate 11 of the present creation. The first artificial graphite heat conductive layer 12 is disposed on the first surface 111 of the substrate 11. The adhesive layer 13 is disposed on the second surface 112 of the substrate 11, or the adhesive layer 13 may be a double-sided adhesive having one surface adhered to the second surface 112 of the substrate 11 and the other surface adhered to the integrated circuit. on. The thickness of the first artificial graphite heat conducting layer 12 is preferably 100±10 nanometers (nm), and the thickness thereof can be suitably applied to the integrated circuit, and the first artificial graphite heat conducting layer 12 does not need to use an organic solvent in the manufacturing process, so The first artificial graphite heat conducting layer 12 does not have the problem of cracking or falling off after a period of use. However, in different embodiments, as shown in FIG. 2, the heat sink 10 may also include only the substrate 11 and the first artificial graphite heat conductive layer 12, and the surface of the integrated circuit requiring the heat sink 10 may be coated with adhesive properties. The material is placed on the surface of the integrated circuit 14 and is not limited thereto.
圖3A~圖3C為本創作第一實施例之散熱片的製作示意圖。如圖3A所示，先將具良好散熱效果的金屬做為本創作之散熱片10的基材11，接著以真空濺鍍(如高電極電漿等)的半導體製程將人工石墨形成於該基材11的第一表面111作為本創作的第一人工石墨導熱層12，如圖3B所示。人工石墨主要為石墨烯，石墨烯是透過將天然石墨以物理式機械剝離法或化學氣相沉積法等製備 方法生產。人工石墨的熱傳導係數大約在1200k~1700k之間，其熱傳導係數比傳統的銅金屬或天然石墨的熱傳導係數好，而且透過真空濺鍍(如高電極電漿)等半導體製程方式形成第一人工石墨導熱層12，其厚度可以控制在100±10奈米(nm)，因此可適用於微小化的積體電路。接著，可應用具黏貼特性的材料以塗佈或沉積等方式將粘著層13形成於基材11的第二表面112，如圖3C所示，除了以上述的粘著材料形成粘著層13外，粘著層13也可以是一雙面膠，貼覆在基材11的第二表面112上，在此並不侷限。 3A-3C are schematic views showing the fabrication of the heat sink of the first embodiment of the present invention. As shown in FIG. 3A, a metal having a good heat dissipation effect is first used as the substrate 11 of the heat sink 10 of the present invention, and then artificial graphite is formed on the base by a semiconductor process of vacuum sputtering (such as high electrode plasma). The first surface 111 of the material 11 serves as the first artificial graphite heat conductive layer 12 of the present invention, as shown in FIG. 3B. The artificial graphite is mainly graphene, and the graphene is prepared by physically removing the natural graphite by mechanical mechanical peeling or chemical vapor deposition. Method of production. The thermal conductivity of artificial graphite is about 1200k~1700k, its thermal conductivity is better than that of traditional copper or natural graphite, and the first artificial graphite is formed by semiconductor process such as vacuum sputtering (such as high electrode plasma). The heat conductive layer 12 can be controlled to a thickness of 100 ± 10 nanometers (nm), and thus can be applied to a miniaturized integrated circuit. Next, the adhesive layer 13 may be applied to the second surface 112 of the substrate 11 by coating or deposition using a material having adhesive properties, as shown in FIG. 3C, except that the adhesive layer 13 is formed of the above-mentioned adhesive material. In addition, the adhesive layer 13 may also be a double-sided tape attached to the second surface 112 of the substrate 11, which is not limited herein.
圖4為本創作第二實施例的散熱片的平面示意圖。如圖4所示，在第二實施例的散熱片20包含基材21、第一人工石墨導熱層22、第二人工石墨導熱層23與粘著層24。 4 is a plan view showing the heat sink of the second embodiment of the present invention. As shown in FIG. 4, the heat sink 20 of the second embodiment includes a substrate 21, a first artificial graphite heat conductive layer 22, a second artificial graphite heat conductive layer 23, and an adhesive layer 24.
第二實施例的基材21同樣可以是由銅或鋁等金屬合金所製成，第一人工石墨導熱層22與第二人工石墨導熱層23分別形成於基材21的第一表面211與第二表面212，且第一人工石墨導熱層22與第二人工石墨導熱層23同樣為人工石墨以真空濺鍍(如高電極電漿等)的半導體製程所構成，其厚度皆為100±10奈米(nm)。然後，在第二人工石墨導熱層23的表面形成一粘著層24，讓散熱片20可以透過粘著層24貼覆於積體電路上。在本創作的第二實施例中，可以再增加一層由人工石墨所構成的第二人工石墨導熱層23，可以進一步提升散熱功效，且同樣可適用於微小化的積體電路上，而且本創作的散熱片的熱傳導係數在介於天然石墨(800K)與人工石墨(1200K~1700K)之間，可提供良好的熱傳導效果。 The substrate 21 of the second embodiment may also be made of a metal alloy such as copper or aluminum, and the first artificial graphite heat conductive layer 22 and the second artificial graphite heat conductive layer 23 are respectively formed on the first surface 211 of the substrate 21 and The second surface 212, and the first artificial graphite heat conducting layer 22 and the second artificial graphite heat conducting layer 23 are also made of a semiconductor process of artificial graphite by vacuum sputtering (such as high electrode plasma), and the thickness thereof is 100±10 Meter (nm). Then, an adhesive layer 24 is formed on the surface of the second artificial graphite heat conductive layer 23, so that the heat sink 20 can be attached to the integrated circuit through the adhesive layer 24. In the second embodiment of the present invention, a second artificial graphite heat conductive layer 23 composed of artificial graphite may be further added, which can further improve the heat dissipation effect, and is also applicable to the miniaturized integrated circuit, and the creation The heat transfer coefficient of the heat sink is between natural graphite (800K) and artificial graphite (1200K~1700K), which provides good heat conduction.
透過本創作的散熱片，人工石墨層可避免發生裂化或脫落的問題，且本創作的散熱片以散熱能力較佳的金屬做為基材與熱傳導係數較佳的人工石墨作為導熱層，提供較現有的散熱片較佳的散熱能力。 Through the created heat sink, the artificial graphite layer can avoid cracking or falling off, and the heat sink of the present invention uses a metal with better heat dissipation as a substrate and artificial graphite with better heat conductivity as a heat conductive layer. The existing heat sink has better heat dissipation capability.
10‧‧‧散熱片 10‧‧‧ Heat sink
11‧‧‧基材 11‧‧‧Substrate
111‧‧‧第一表面 111‧‧‧ first surface
112‧‧‧第二表面 112‧‧‧ second surface
12‧‧‧第一人工石墨導熱層 12‧‧‧First artificial graphite heat conduction layer
13‧‧‧粘著層 13‧‧‧Adhesive layer
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105207313U TWM538240U (en) | 2016-05-19 | 2016-05-19 | Heat dissipation sheet for integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105207313U TWM538240U (en) | 2016-05-19 | 2016-05-19 | Heat dissipation sheet for integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM538240U true TWM538240U (en) | 2017-03-11 |
Family
ID=58774719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105207313U TWM538240U (en) | 2016-05-19 | 2016-05-19 | Heat dissipation sheet for integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM538240U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI685422B (en) * | 2019-01-29 | 2020-02-21 | 兆科科技有限公司 | Heat dissipation label with high contrast color difference forming identification mark |
-
2016
- 2016-05-19 TW TW105207313U patent/TWM538240U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI685422B (en) * | 2019-01-29 | 2020-02-21 | 兆科科技有限公司 | Heat dissipation label with high contrast color difference forming identification mark |
| CN111491485A (en) * | 2019-01-29 | 2020-08-04 | 东莞市兆科电子材料科技有限公司 | Heat dissipation label with high contrast color difference forms discernment and marks |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2002084735A1 (en) | Radiating structural body of electronic part and radiating sheet used for the radiating structural body | |
| TW201640627A (en) | Electronic package structure and the manufacture thereof | |
| TWI603441B (en) | Power module and manufacturing method thereof | |
| CN103219250A (en) | Preparation method of graphene radiating fins | |
| CN105792598A (en) | A kind of graphene composite metal foil | |
| CN107735248A (en) | Flexible, compliant thermal interface material with ultrahigh thermal conductivity | |
| WO2013139058A1 (en) | Thermal dissipation substrate and manufacturing method therefor | |
| CN207869492U (en) | Graphene heat sink substrate | |
| CN104538312B (en) | Method for manufacturing cooling chip through boron nitride | |
| US20210066157A1 (en) | Power electronics module and a method of producing a power electronics module | |
| JP2007096279A5 (en) | ||
| CN107708296A (en) | A kind of metal-based circuit board of high heat conduction and preparation method thereof | |
| TWM538240U (en) | Heat dissipation sheet for integrated circuit | |
| KR101361105B1 (en) | Heat radiation tape having excellent thermal conductivity | |
| CN115226360A (en) | Thermal interface, method of obtaining same, and method of promoting heat transfer | |
| TWI579987B (en) | Heat dissipation module | |
| US20210410331A1 (en) | Integrated circuit die thermal solutions with a contiguously integrated heat pipe | |
| TWI353205B (en) | ||
| US20070048520A1 (en) | Thermal interface material and method for making the same | |
| TWI231586B (en) | Chip module having high heat dissipation property and its substrate | |
| TWM444701U (en) | Nano carbon ball heat dissipation patch structure | |
| CN100440492C (en) | Method and adhesive strip for bonding liquid metal to interface surfaces | |
| CN104538313B (en) | A kind of method of filling metallic copper in aluminium oxide ceramic substrate through hole | |
| TWM624077U (en) | Heat-dissipation device with patterned surface layer for vehicle | |
| TWM444700U (en) | Heat dissipation patch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |