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TWM505707U - Light-emitting diode package structure - Google Patents

Light-emitting diode package structure Download PDF

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Publication number
TWM505707U
TWM505707U TW104202961U TW104202961U TWM505707U TW M505707 U TWM505707 U TW M505707U TW 104202961 U TW104202961 U TW 104202961U TW 104202961 U TW104202961 U TW 104202961U TW M505707 U TWM505707 U TW M505707U
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TW
Taiwan
Prior art keywords
light
emitting diode
chip
package structure
diode chip
Prior art date
Application number
TW104202961U
Other languages
Chinese (zh)
Inventor
zhen-lun Xingchen
rong-hao Hong
Jun-Chang Wu
Original Assignee
Prolight Opto Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Prolight Opto Technology Corp filed Critical Prolight Opto Technology Corp
Priority to TW104202961U priority Critical patent/TWM505707U/en
Priority to DE202015103835.6U priority patent/DE202015103835U1/en
Publication of TWM505707U publication Critical patent/TWM505707U/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Description

發光二極體之封裝結構 Light-emitting diode package structure

本創作係有關於一種發光二極體之封裝結構,尤指針對於一種能夠發出兩種不同色溫光源之發光二極體之封裝結構。 The present invention relates to a package structure of a light-emitting diode, in particular to a package structure of a light-emitting diode capable of emitting two different color temperature light sources.

科技日新月異,有關於照明技術方面更是大幅度的躍進,近年來積極發展有關於發光二極體(Light-Emitting Diode,LED)此一技術,其為一種能發光的半導體電子元件,能夠發出的光已經遍及可見光、紅外線及紫外線,光度亦提高到相當高的程度。用途由初時的指示燈及顯示板等;隨著白光發光二極體的出現,近年逐漸發展至被普遍用作照明用途。 The technology is changing with each passing day. There is a big leap forward in lighting technology. In recent years, there has been a development of a technology related to Light-Emitting Diode (LED), which is a kind of semiconductor electronic component capable of emitting light. The light has spread over visible light, infrared light and ultraviolet light, and the luminosity has also increased to a considerable extent. The use of the initial indicator lights and display panels; with the emergence of white light emitting diodes, in recent years has gradually developed to be widely used for lighting purposes.

而傳統的照明燈具僅適用於照亮室內的裝置,而對於光的色調設計也並未特別的講究,其燈光大多數提供白光、冷白光與暖白光等等選擇,不過,隨著LED智慧照明的應用成熟,讓燈具不再是僅僅提供人們足夠光源的工具,藉由燈具結合智慧照明的方式,改變人們過往對於光的體驗與感受。 The traditional lighting fixtures are only suitable for illuminating indoor devices, but the color tone design is not particularly particular. Most of the lights provide white light, cool white light and warm white light, but with LED smart lighting. The application is mature, so that the luminaire is no longer a tool that only provides enough light source for people. By means of luminaires combined with intelligent lighting, people change the experience and feelings of people in the past.

且根據研究指出,光源同時對人的生理與心理造成影響,並且牽動著人們的生理時鐘狀況,適時與適量的光源,以及適當的日照與黑夜分布也是影響人體運作的關鍵,自然光對於人們的生產力有正面幫助,同時對於情緒與健康也都有益處,因此,辦公室的光源落能隨著太陽光的變化進行調整,將可以使得人們生產力與 對工作滿意度同步提升,更進一步利用光源增加對於人們情緒與健康的助益。 According to the research, the light source affects both human physiology and psychology, and affects people's physiological clock conditions. The timely and appropriate amount of light source, as well as appropriate sunshine and night distribution are also the key to affect the human body's operation. Natural light is for people's productivity. Positive help, and good for both mood and health. Therefore, the office’s light source can be adjusted with changes in sunlight, which will make people productive. The job satisfaction is improved simultaneously, and the use of light sources to further increase the emotional and health benefits.

未來光源扮演角色將不再只是照亮作用,智慧照明為照明帶來舒適與便利等更上一層的用途,也為使用者帶來更舒適的心情。智慧照明未來可望成為資訊傳輸的媒介的用途與發展性更是讓產業界期待。智慧照明絕對是未來數年內的一大趨勢,而技術的成熟度與使用者的接受度皆是智慧照明滲透率能否順利拉升的關鍵。 The role of the future light source will no longer be just a illuminating effect. Smart lighting will bring more comfort and convenience to the lighting, and also bring more comfort to the user. The future use and development of smart lighting is expected to become the medium of information transmission. Smart lighting is definitely a major trend in the next few years, and the maturity of technology and the acceptance of users are the key to the smooth penetration of smart lighting penetration.

習知技術中,燈具發出光源照明的方式,僅係提供單一色溫之光源,若需要暖白光的光源就僅能挑選暖白色燈泡,若需要冷白光的光源也就僅能挑選冷白光的燈泡,若需要營造一個好光源的環境或一個夠依照使用者需求適時後的發出所需要的光源的地方,其需要耗費較多成本開銷,且其打出的光源也未必是你心目中理想的色光光源,故,本創作針對於此種問題提出一種發光二極體的封裝結構以克服習知技術之缺點。 In the prior art, the way in which the luminaire emits light source illumination is only a light source that provides a single color temperature. If a warm white light source is required, only a warm white light bulb can be selected. If a cold white light source is required, only a cold white light bulb can be selected. If you need to create a good light source environment or a place to send out the required light source according to the user's needs, it will cost more cost, and the light source is not necessarily the ideal color light source. Therefore, the present invention proposes a package structure of a light-emitting diode to overcome the shortcomings of the prior art.

本創作之目的之一,在於提供一種發光二極體的封裝結構,利用同一封裝結構內,能夠發出兩種色溫之光源。 One of the purposes of the present invention is to provide a package structure for a light-emitting diode that utilizes the same package structure to emit light sources of two color temperatures.

本創作之目的之一,在於提供一種發光二極體的封裝結構,於同一封裝結構內具有兩種色溫之光源,其可控制為各別單獨發光或共同發光。 One of the purposes of the present invention is to provide a package structure of a light-emitting diode having two color temperature light sources in the same package structure, which can be controlled to individually emit light or to emit light together.

為達上述所指稱之目的及功效,本創作係有關於一種發光二極體之封裝結構,其包含一封裝體、一第一發光二極體晶片與一第二發光二極體晶片,該封裝體具有一容置槽,該第一發光二極體晶 片設置於該容置槽內,並覆蓋一第一螢光粉層於該第一發光二極體晶片之上,該第二發光二極體晶片設置於該容置槽內,並位於該第一發光二極體晶片之一側,並覆蓋一第二螢光粉層於該第二發光二極體晶片及該第一螢光粉層之上。 In order to achieve the above-mentioned purpose and effect, the present invention relates to a package structure for a light-emitting diode, comprising a package body, a first light-emitting diode chip and a second light-emitting diode chip, the package The body has a receiving groove, the first light emitting diode crystal The first light-emitting diode layer is disposed on the first light-emitting diode wafer, and the second light-emitting diode chip is disposed in the accommodating groove, and is located in the accommodating groove One side of a light-emitting diode chip and covering a second phosphor layer on the second LED chip and the first phosphor layer.

再者,本創作之另一種發光二極體之封裝結構,其具有一封裝體、一第一發光二極體晶片與一第二發光二極體晶片,該封裝體具有一容置槽,該第一發光二極體晶片設置於該容置槽內,該第二發光二極體晶片設置於該容置槽內,且位於該第一發光二極體晶片之一側,並覆蓋一第一螢光粉層於該第一發光二極體晶片及該第二發光二極體晶片之上,再一第二螢光粉層覆蓋於該第一螢光粉層之上,並位於該第一發光二極體晶片上方。 Furthermore, the package structure of the light-emitting diode of the present invention has a package body, a first light-emitting diode chip and a second light-emitting diode chip, and the package body has a receiving groove. The first LED chip is disposed in the accommodating groove, and the second LED chip is disposed in the accommodating groove and is located on one side of the first illuminating diode chip and covers a first a phosphor layer is disposed on the first LED chip and the second LED chip, and a second phosphor layer is disposed on the first phosphor layer, and is located at the first Above the light-emitting diode wafer.

再者,更進一步設置一控制模組,該控制模組分別電性連接於該第一發光二極體晶片與該第二發光二極體晶片,並且控制該第一發光二極體晶片與該第二發光二極體晶片各別單獨發光或共同發光。 Furthermore, a control module is further disposed, the control module is electrically connected to the first LED chip and the second LED chip, and controls the first LED chip and the The second LED chips are individually illuminated or co-illuminated.

本創作之一實施例在於,該第一發光二極體晶片與該第二發光二極體晶片發出之波長為360nm至480nm。 An embodiment of the present invention is that the first light emitting diode chip and the second light emitting diode chip emit a wavelength of 360 nm to 480 nm.

本創作之一實施例在於,該第一螢光粉層內之螢光粉係選自於紅色螢光粉、橙色螢光粉與深黃色螢光粉之組成的其中一種。 In one embodiment of the present invention, the phosphor powder in the first phosphor layer is selected from the group consisting of red phosphor powder, orange phosphor powder and dark yellow phosphor powder.

本創作之一實施例在於,該第二螢光粉層內之螢光粉為黃色螢光粉。 An embodiment of the present invention is that the phosphor powder in the second phosphor layer is yellow phosphor powder.

本創作之一實施例在於,設置一控制模組,該控制模組分別電性連接於該第一發光二極體晶片與該第二發光二極體晶片,並且控 制該第一發光二極體晶片與該第二發光二極體晶片各別單獨發光或共同發光。 An embodiment of the present invention is to provide a control module electrically connected to the first LED chip and the second LED chip, and control The first light emitting diode chip and the second light emitting diode chip are separately illuminated or co-illuminated.

本創作之一實施例在於,該控制模組利用一輸入電流改變該第一發光二極體晶片之光源色溫或/及該第二發光二極體晶片之光源色溫。 One embodiment of the present invention is that the control module uses an input current to change the color temperature of the light source of the first LED chip or/and the color temperature of the source of the second LED chip.

本創作之一實施例在於,設置一第三發光二極體晶片,該第三發光二極體晶片設置於容置槽內,並位於該第二發光二極體晶片之一側。 An embodiment of the present invention is to provide a third LED chip disposed in the accommodating groove and located on one side of the second illuminating diode chip.

1‧‧‧封裝體 1‧‧‧Package

10‧‧‧第一發光二極體晶片 10‧‧‧First LED Diode Wafer

11‧‧‧容置槽 11‧‧‧ accommodating slots

12‧‧‧支架 12‧‧‧ bracket

13‧‧‧套環 13‧‧‧ collar

100‧‧‧第一光源 100‧‧‧first light source

110‧‧‧第一螢光粉層 110‧‧‧First phosphor layer

110A‧‧‧第一螢光粉層 110A‧‧‧First phosphor layer

20‧‧‧第二發光二極體晶片 20‧‧‧Second light-emitting diode chip

200‧‧‧第二光源 200‧‧‧second light source

210‧‧‧第二螢光粉層 210‧‧‧Second phosphor layer

210A‧‧‧第二螢光粉層 210A‧‧‧Second phosphor layer

30‧‧‧第三發光二極體晶片 30‧‧‧ Third LED Diode Wafer

40‧‧‧控制模組 40‧‧‧Control Module

50‧‧‧電源模組 50‧‧‧Power Module

第一圖:其係為本創作之第一實施例之發光二極體之封裝結構示意圖;第二圖:其係為本創作之第一實施例之發光二極體之電路連接示意圖;第三圖:其係為本創作之第一實施例之發光示意圖;第四圖:其係為本創作之第一實施例之另一發光示意圖;第五圖:其係為本創作之第一實施例之再一發光示意圖;第六圖:其係為本創作之第二實施例之發光二極體之封裝結構示意圖;第七圖:其係為本創作之第三實施例之發光二極體之封裝結構示意圖;以及第八圖:其係為本創作之第四實施例之發光二極體之封裝結構示意圖。 The first figure is a schematic diagram of the package structure of the light-emitting diode of the first embodiment of the present invention; the second figure is a circuit connection diagram of the light-emitting diode of the first embodiment of the present invention; Figure: is a schematic diagram of the illumination of the first embodiment of the creation; the fourth diagram is another illumination diagram of the first embodiment of the creation; the fifth diagram: it is the first embodiment of the creation A further schematic diagram of a light-emitting diode; a sixth diagram: a schematic diagram of a package structure of a light-emitting diode according to a second embodiment of the present invention; and a seventh diagram: a light-emitting diode of the third embodiment of the present invention A schematic diagram of a package structure; and an eighth diagram: a schematic diagram of a package structure of a light-emitting diode according to a fourth embodiment of the present invention.

為使 貴審查委員對本創作之特徵及所達成之功效有更進一步之 瞭解與認識,謹佐以較佳之實施例及配合詳細之說明,說明如後: In order for your review board to further the characteristics of the creation and the effectiveness achieved Understanding and understanding, with the best examples and detailed explanations, as explained below:

請參閱第一圖,其係為本創作之第一實施例之發光二極體之封裝結構示意圖;如圖所示,本實施例係有關於一種發光二極體之封裝結構,其包含一封裝體1、一第一發光二極體晶片10與一第二發光二極體晶片20,該封裝體1具有一容置槽11,並將該第一發光二極體晶片10與該第二發光二極體晶片20設置於該容置槽11內,本實施例主要利用兩種螢光粉分別改變兩個發光二極體晶片發出之色溫光源,進一步利用兩種色溫光源係以個別單獨發光或是兩者混合發光之形式,以調整出使用者所需要之色溫光源。 Please refer to the first figure, which is a schematic diagram of a package structure of a light-emitting diode according to a first embodiment of the present invention; as shown in the figure, the present embodiment relates to a package structure of a light-emitting diode, which comprises a package. a first light-emitting diode wafer 10 and a second light-emitting diode wafer 20, the package body 1 has a receiving groove 11 and the first light-emitting diode wafer 10 and the second light-emitting body The diode chip 20 is disposed in the accommodating groove 11. In this embodiment, the two color phosphors are used to change the color temperature light source emitted by the two light emitting diode chips, and the two color temperature light sources are further used to individually emit light or It is a form of mixed illumination to adjust the color temperature source required by the user.

承上所述,本實施例之發光二極體之封裝結構,該封裝體1具有容置槽11,該第一發光二極體晶片10設置於該容置槽11內,並覆蓋一第一螢光粉層110於該第一發光二極體晶片10之上,該第二發光二極體晶片20設置於該容置槽11內,並位於該第一發光二極體晶片10之一側,並覆蓋一第二螢光粉層210於該第二發光二極體晶片20及該第一螢光粉層110之上。 According to the above-mentioned package structure of the light-emitting diode of the present embodiment, the package body 1 has a receiving groove 11 , and the first light-emitting diode chip 10 is disposed in the receiving groove 11 and covers a first The phosphor layer 110 is disposed on the first LED chip 10, and the second LED chip 20 is disposed in the receiving slot 11 and located on one side of the first LED wafer 10 And covering a second phosphor layer 210 on the second LED chip 20 and the first phosphor layer 110.

而該封裝體1係以一支架12與一套環13組成並作為一實施例進行說明,該套環13可為一反射件,該套環13設置於該支架12之上,並且於該支架12上與該套環13內為一容置槽11,於該容置槽11內設置該第一發光二極體晶片10與該第二發光二極體晶片20,而該套環13係用於反射該第一發光二極體晶片10與該第二發光二極體晶片20所發出之光源。 The package 1 is composed of a bracket 12 and a set of rings 13 and is described as an embodiment. The collar 13 can be a reflector. The collar 13 is disposed on the bracket 12 and is mounted on the bracket. The first light-emitting diode wafer 10 and the second light-emitting diode wafer 20 are disposed in the receiving space 11 and the second light-emitting diode chip 20 is disposed in the receiving ring 11. The light source emitted by the first LED chip 10 and the second LED chip 20 is reflected.

而該第一發光二極體晶片10相同於該第二發光二極體晶片20,該 第一發光二極體晶片10與該第二發光二極體晶片20同樣係利用波長為360nm至480nm之藍光晶片,於該第一發光二極體晶片10上設置該第一螢光粉層110,該第一螢光粉層110內之螢光粉顏色係為偏向暖色系,其係選自紅色螢光粉、橙色螢光粉或深黃色螢光粉等系列之螢光粉,使該第一發光二極體晶片10所發出之光源偏向低色溫光源,再者,將該第二螢光粉層210設置於位於該第一發光二極體晶片10上方的該第一螢光粉層110上與該第二發光二極體晶片20上,該第二螢光粉層210內之螢光粉則係用於將該第一發光二極體晶片10與該第二發光二極體晶片20之光源混成白光為主,其係為黃色螢光粉。 The first LED chip 10 is identical to the second LED chip 20, and the second LED chip 10 The first light-emitting diode wafer 10 and the second light-emitting diode wafer 20 are disposed on the first light-emitting diode wafer 10 by using a blue light wafer having a wavelength of 360 nm to 480 nm. The color of the phosphor powder in the first phosphor layer 110 is a warm color system, which is selected from a series of phosphor powders such as red phosphor powder, orange phosphor powder or deep yellow phosphor powder. The light source emitted from the LED chip 10 is biased toward the low color temperature light source. Further, the second phosphor layer 210 is disposed on the first phosphor layer 110 above the first LED substrate 10. The phosphor powder in the second phosphor layer 210 is used to polish the first LED wafer 10 and the second LED wafer 20 on the second and second LED chips 20 The light source is mainly composed of white light, which is a yellow fluorescent powder.

該第一發光二極體晶片10之光源於通過該第一螢光粉層110後,其光源繼續通過設置於該第一螢光粉層110上之該第二螢光粉層210,該第一發光二極體晶片10之光源受到第一螢光粉層110與該第二螢光粉層210之激發,而使該第一發光二極體晶片10發出一第一光源100為偏向暖色係之低色溫光源之一暖白光,而該第二發光二極體晶片20發出之光源通過該第二螢光粉層210,其光源受到該第二螢光粉層210之激發,而使該第二發光二極體晶片20發出一第二光源200則為白光或為偏向冷色系之高色溫光源的冷白光。 After the light source of the first LED powder 10 passes through the first phosphor layer 110, the light source continues to pass through the second phosphor layer 210 disposed on the first phosphor layer 110. The light source of the light-emitting diode wafer 10 is excited by the first phosphor powder layer 110 and the second phosphor powder layer 210, so that the first light-emitting diode wafer 10 emits a first light source 100 as a warm color system. One of the low color temperature light sources is warm white light, and the light source emitted by the second light emitting diode chip 20 passes through the second phosphor powder layer 210, and the light source is excited by the second phosphor powder layer 210, so that the first The second light emitting diode chip 20 emits a second light source 200 which is white light or cool white light which is a high color temperature light source which is biased toward a cool color system.

本實施例利用該第一發光二極體晶片10與該第二發光二極體晶片20配合該第一螢光粉層110與該第二螢光粉層210之設置方式,進而使該封裝體1內所發出之光源於最後通過該第一螢光粉層110與該第二螢光粉層210後,而發出該第一光源100與該第二光源200兩種色溫之光源,本創作可依據使用者之需求來營造舒適光源的 環境,或者能夠依照使用者需求發出所需要的色溫光源的地方。 In this embodiment, the first light-emitting diode wafer 10 and the second light-emitting diode wafer 20 are matched with the first phosphor powder layer 110 and the second phosphor powder layer 210, thereby further encapsulating the package. The light source emitted in the first light source passes through the first phosphor powder layer 110 and the second phosphor powder layer 210, and the light source of the first light source 100 and the second light source 200 is emitted. Create a comfortable light source according to the needs of the user The environment, or the place where the required color temperature light source can be emitted according to the user's needs.

請一併參閱第二圖,其係為本創作之第一實施例之發光二極體之電路連接示意圖;如圖所示,本實施例為發光二極體之電路相關應用方式,更進一步設有一電源模組40與一控制模組50,該電源模組40電性連接於該控制模組50,而該控制模組50分別電性連接於該第一發光二極體晶片10與該第二發光二極體晶片20,主要透過該控制模組50控制該電源模組40對該第一發光二極體晶片10與該第二發光二極體晶片20之電源供應與一輸入電流大小(圖未示)之輸出控制。 Please refer to the second figure, which is a schematic diagram of the circuit connection of the light-emitting diode of the first embodiment of the present invention; as shown in the figure, the present embodiment is a circuit-related application mode of the light-emitting diode, and further set The power module 40 and the control module 50 are electrically connected to the control module 50, and the control module 50 is electrically connected to the first LED chip 10 and the first The two-light-emitting diode chip 20 controls the power supply and the input current of the first LED chip 10 and the second LED chip 20 through the control module 50. The output control of the figure is not shown.

請一併參閱第三圖至第五圖,其係為本創作之第一實施例之發光示意圖、另一發光示意圖與再一發光示意圖;如圖所示,本實施例透過該控制模組50控制該第一發光二極體晶片10或該第二發光二極體晶片20能夠各別進行單獨發光或是該第一發光二極體晶片10與該第二發光二極體晶片20能夠同時發光,並且其光源進行混光,其中,該第三圖係說明僅該第一發光二極體晶片10進行單獨發光,其光源受到該第一螢光粉層110與該第二螢光粉層210激發後,而發出該第一光源100,該第一光源100為低色溫光源之一暖白光,其色溫約在3300K以下之光源。 Please refer to the third to fifth figures, which are schematic diagrams of the illumination of the first embodiment of the present invention, another illumination diagram and a further illumination diagram; as shown in the figure, the embodiment passes through the control module 50. Controlling the first light emitting diode chip 10 or the second light emitting diode chip 20 to be individually illuminated or the first light emitting diode chip 10 and the second light emitting diode chip 20 can simultaneously emit light And the light source is mixed, wherein the third figure illustrates that only the first LED chip 10 is separately illuminated, and the light source is received by the first phosphor layer 110 and the second phosphor layer 210. After the excitation, the first light source 100 is emitted. The first light source 100 is a light source with a warm white light of one of the low color temperature light sources and a color temperature of about 3300K or less.

第四圖係說明僅該第二發光二極體晶片20進行單獨發光,其光源受到該第二螢光粉層210激發後,而發出該第二光源200,該第二光源200為一白光或為高色溫光源之一冷白光,其色溫約在6000K以上之光源。 The fourth figure illustrates that only the second LED chip 20 is separately illuminated, and the light source is excited by the second phosphor layer 210 to emit the second source 200. The second source 200 is a white light or It is a light source of high color temperature light source, and its color temperature is about 6000K.

第五圖係為該第一發光二極體晶片10與該第二發光二極體晶片20 同時發出該第一光源100與該第二光源200,經過混光後之光源,其光源之色溫介於該第一發光二極體晶片10單獨發光之色溫光源與該第二發光二極體晶片20單獨發光之色溫光源之間,即為光源介於高色溫光源與低色溫光源之間,其色溫約在3000K至6000K之間的光源。 The fifth figure is the first light emitting diode chip 10 and the second light emitting diode chip 20 Simultaneously emitting the first light source 100 and the second light source 200, and after the light source is mixed, the color temperature of the light source is different from the color temperature light source and the second light emitting diode chip of the first light emitting diode wafer 10 20 separately between the color temperature light sources, that is, the light source between the high color temperature source and the low color temperature source, and the color temperature is between 3000K and 6000K.

本實施例之光源色溫值能透過該控制模組40控制輸入於該第一發光二極體晶片10與該第二發光二極體晶片20之間的該輸入電流量大小,該輸入電流量越大則其發出之光源色溫值越高,該輸入電流量越小則其發出之光源色溫值越低,進而調整該第一發光二極體晶片10於發出該第一光源100之光源色溫值或該第二發光二極體晶片20發出該第二光源200之光源色溫值,亦或是該第一發光二極體晶片10與該第二發光二極體晶片20共同發光時,該第一光源100與該第二光源200混光之光源色溫值,利用上述方式可依據使用者之需求調整發出光源之光源色溫值。 The color temperature value of the light source of the embodiment can control the amount of the input current input between the first LED chip 10 and the second LED chip 20 through the control module 40. The amount of the input current is increased. The higher the color temperature value of the light source is, the lower the input current amount is, the lower the color temperature value of the light source is, and the color temperature value of the light source of the first light source 100 is adjusted. The second light-emitting diode wafer 20 emits a light source color temperature value of the second light source 200, or the first light-emitting diode wafer 10 and the second light-emitting diode wafer 20 emit light together, the first light source The color temperature value of the light source mixed with the second light source 200 can be adjusted according to the user's needs.

請一併參閱第六圖,其係為本創作之第二實施例之發光二極體之封裝結構示意圖;如圖所示,本實施例與第一實施例之差異在於,該第一發光二極體晶片10與該第二發光二極體晶片20之螢光粉層封裝方式,將一第一螢光粉層110A覆蓋於該第一發光二極體晶片10上與該第二發光二極體晶片20之上,再將一第二螢光粉層210A設置於該第一螢光粉層110A上,並位於該第二發光二極體晶片20的上方,更進一步,該第二螢光粉層210A未設置於位於該第二發光二極體晶片20的上方。 Please refer to the sixth figure, which is a schematic diagram of the package structure of the light-emitting diode according to the second embodiment of the present invention; as shown in the figure, the difference between the embodiment and the first embodiment is that the first light-emitting two A phosphor layer coating method of the polar body wafer 10 and the second LED substrate 20 covers a first phosphor layer 110A on the first LED array 10 and the second LED On the body wafer 20, a second phosphor layer 210A is disposed on the first phosphor layer 110A and above the second LED chip 20, and further, the second phosphor The powder layer 210A is not disposed above the second LED wafer 20.

承上所述,本實施例係先將該第一發光二極體晶片10與該第二發光二極體晶片20上塗佈一層薄薄的該第一螢光粉層110A,該第一 螢光粉層110A之螢光粉係用於將該第一發光二極體晶片10與該第二發光二極體晶片20之光源混成白光為主,其係為黃色螢光粉,該第一發光二極體晶片10與該第二發光二極體晶片20之光源受到該第一螢光粉層110A激發,而發出一白光或為高色溫光源之一冷白光,再將該第二螢光粉層210A設置於該第一螢光粉層110A之上,且位於該第一發光二極體晶片10之上方,該第二螢光粉層210A內之螢光粉顏色係為偏向暖色系,其係選自紅色螢光粉、橙色螢光粉或深黃色螢光粉等系列之螢光粉,使該第一發光二極體晶片10之光源再次受到第二螢光粉層210A之激發,而發出低色溫光源之一暖白光。 As described above, in the embodiment, the first LED substrate 10 and the second LED wafer 20 are coated with a thin layer of the first phosphor layer 110A. The phosphor powder of the phosphor layer 110A is used for mixing the first light-emitting diode wafer 10 and the light source of the second light-emitting diode wafer 20 into white light, which is a yellow phosphor powder, the first The light source of the light emitting diode chip 10 and the second light emitting diode chip 20 is excited by the first phosphor powder layer 110A to emit a white light or a cool white light of a high color temperature light source, and then the second fluorescent light is emitted. The powder layer 210A is disposed on the first phosphor layer 110A and above the first LED array 10, and the color of the phosphor in the second phosphor layer 210A is a warm color system. The light source is selected from the group consisting of red phosphor powder, orange phosphor powder or dark yellow phosphor powder, so that the light source of the first light-emitting diode wafer 10 is again excited by the second phosphor powder layer 210A. And one of the low color temperature light sources emits warm white light.

請復參閱第二圖,本實施例也相同於第一實施例之電路相關應用方式與對應之發光形式,本實施例同樣利用該電源模組40與該控制模組50,該控制模組50分別電性連接於該第一發光二極體晶片10與該第二發光二極體晶片20,故,於此不再贅述。 Referring to the second figure, the embodiment is also the same as the circuit-related application mode of the first embodiment and the corresponding light-emitting form. In this embodiment, the power module 40 and the control module 50 are also used. The control module 50 is used. The first light-emitting diode wafer 10 and the second light-emitting diode wafer 20 are electrically connected to each other, and thus will not be described herein.

請參閱第七圖,其係為本創作之第三實施例之發光二極體之封裝結構示意圖;如圖所示,本實施例與第一實施例之差異在於,本實施例更進一步設置一第三發光二極體晶片30,該第三發光二極體晶片30設置於該容置槽11內,並且位於該第一發光二極體晶片10或該第二發光二極體晶片20之一側,該第三發光二極體晶片30為不同色系之發光二極體晶片,如:紅色發光二極體晶片或綠色發光二極體晶片等,主要用於增添該第一發光二極體晶片10與該第二發光二極體晶片20之色溫光源有所不足的部分,或係用於調整該第一發光二極體晶片10與該第二發光二極體晶片20於各別單獨發光之光源色溫值或混合發光之光源色溫值。 Please refer to the seventh figure, which is a schematic diagram of the package structure of the light-emitting diode according to the third embodiment of the present invention; as shown in the figure, the difference between the embodiment and the first embodiment is that the embodiment further sets a The third LED chip 30 is disposed in the accommodating groove 11 and located in the first illuminating diode chip 10 or the second illuminating diode chip 20 The third LED chip 30 is a light-emitting diode chip of different color systems, such as a red light-emitting diode chip or a green light-emitting diode chip, and is mainly used for adding the first light-emitting diode. The portion of the wafer 10 and the color light source of the second LED chip 20 is insufficient, or is used to adjust the first LED substrate 10 and the second LED wafer 20 to emit light separately. The color temperature value of the light source or the color temperature value of the light source of the mixed light.

再者,該第三發光二極體晶片30之相關電路也相同於第一實施例,該第三發光二極體晶片30電性連接於該控制模組50,利用該控制模組50控制該電源模組40對該第三發光二極體晶片30之電源供應與該輸入電流大小之輸出控制,進而調整該第三發光二極體晶片30所發出之光源色溫值。 The third LED module 30 is electrically connected to the control module 50, and the control module 50 is used to control the third LED chip 30. The power module 40 controls the power supply of the third LED chip 30 and the output of the input current, thereby adjusting the color temperature value of the light source emitted by the third LED chip 30.

請參閱第八圖,其係為本創作之第四實施例之發光二極體之封裝結構示意圖;如圖所示,本實施例與第二實施例之差異在於,本實施例更進一步設置一第三發光二極體晶片30,該第三發光二極體晶片30設置於該容置槽11內,並且位於該第二發光二極體晶片20之一側,而其功效相同於該第三實施例之該第三發光二極體晶片20,故,不再贅述。 Please refer to FIG. 8 , which is a schematic diagram of a package structure of a light-emitting diode according to a fourth embodiment of the present invention; as shown in the figure, the difference between this embodiment and the second embodiment is that the embodiment further sets a The third LED chip 30 is disposed in the accommodating groove 11 and located on one side of the second illuminating diode chip 20, and has the same function as the third The third LED chip 20 of the embodiment is not described again.

綜上所述,本創作係有關於一種發光二極體之封裝結構,於該封裝體內具有該第一發光二極體晶片與該第二發光二極體晶片,並透過螢光粉層之結構設計,使該封裝體能夠發出兩種色溫之光源,再者,利用該控制模組電性連接該第一發光二極體晶片與該第二發光二極體晶片,利用該控制模組調整該第一發光二極體晶片與該第二發光二極體晶片之電源供應與該輸入電流大小之輸出控制,而使該第一發光二極體晶片與該第二發光二極體晶片能夠單獨發光或是混合發光,另外,於該封裝體內增設該第三發光二極體晶片,利用該第三發光二極體晶片用於補足光源色溫或是用於調整該封裝體所發出之光源色溫值。 In summary, the present invention relates to a package structure of a light-emitting diode, having the first light-emitting diode chip and the second light-emitting diode chip in the package body, and transmitting the structure of the phosphor powder layer The design is such that the package can emit two color temperature light sources. Further, the first light emitting diode chip and the second light emitting diode chip are electrically connected by the control module, and the control module is used to adjust the light source. The power supply of the first light emitting diode chip and the second light emitting diode chip and the output of the input current are controlled, so that the first light emitting diode chip and the second light emitting diode chip can emit light separately Alternatively, the third light emitting diode chip is added to the package body, and the third light emitting diode chip is used to supplement the color temperature of the light source or to adjust the color temperature value of the light source emitted by the package.

惟以上所述者,僅為本創作一較佳實施例而已,並非用來限定本創作實施之範圍,故舉凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本新型之申 請專利範圍內。 However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, the shapes, structures, features, and spirits described in the scope of the present patent application are equally changed. Modifications should be included in the application of this new type Please be within the scope of the patent.

故本創作實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出新型專利申請,祈 鈞局早日賜至准專利,至感為禱。 Therefore, this creation is a novelty, progressive and available for industrial use. It should be in line with the patent application requirements of China's patent law. It is undoubtedly a new type of patent application, and the Prayer Council will grant the patent as soon as possible. .

1‧‧‧封裝體 1‧‧‧Package

10‧‧‧第一發光二極體晶片 10‧‧‧First LED Diode Wafer

11‧‧‧容置槽 11‧‧‧ accommodating slots

12‧‧‧支架 12‧‧‧ bracket

13‧‧‧套環 13‧‧‧ collar

110‧‧‧第一螢光粉層 110‧‧‧First phosphor layer

20‧‧‧第二發光二極體晶片 20‧‧‧Second light-emitting diode chip

210‧‧‧第二螢光粉層 210‧‧‧Second phosphor layer

Claims (14)

一種發光二極體之封裝結構,其包含:一封裝體,該封裝體具有一容置槽;一第一發光二極體晶片,其係設置於該容置槽內,並覆蓋一第一螢光粉層於該第一發光二極體晶片之上;以及一第二發光二極體晶片,其係設置於該容置槽內,並且位於該第一發光二極體晶片之一側,並覆蓋一第二螢光粉層於該第二發光二極體晶片及該第一螢光粉層之上。 A package structure of a light-emitting diode, comprising: a package body having a receiving groove; a first light-emitting diode chip disposed in the receiving groove and covering a first firefly a light emitting layer on the first light emitting diode wafer; and a second light emitting diode chip disposed in the receiving groove and located on one side of the first light emitting diode chip, and Covering a second phosphor layer on the second LED chip and the first phosphor layer. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中該第一發光二極體晶片與該第二發光二極體晶片發出之波長為360nm至480nm。 The package structure of the light-emitting diode according to the first aspect of the invention, wherein the first light-emitting diode wafer and the second light-emitting diode wafer emit a wavelength of 360 nm to 480 nm. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中該第一螢光粉層內之螢光粉係選自於紅色螢光粉、橙色螢光粉與深黃色螢光粉之組成的其中一種。 The package structure of the light-emitting diode according to claim 1, wherein the phosphor powder in the first phosphor layer is selected from the group consisting of red phosphor powder, orange phosphor powder and deep yellow phosphor powder. One of the components. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中該第二螢光粉層內之螢光粉為黃色螢光粉。 The package structure of the light-emitting diode according to claim 1, wherein the phosphor powder in the second phosphor layer is yellow phosphor powder. 如申請專利範圍第1項所述之發光二極體之封裝結構,更進一步設置一控制模組,該控制模組分別電性連接於該第一發光二極體晶片與該第二發光二極體晶片,並且控制該第一發光二極體晶片與該第二發光二極體晶片各別單獨發光或共同發光。 The package structure of the light-emitting diode according to the first aspect of the invention is further provided with a control module electrically connected to the first light-emitting diode chip and the second light-emitting diode And controlling the first light emitting diode chip and the second light emitting diode chip to emit light or to emit light separately. 如申請專利範圍第5項所述之發光二極體之封裝結構,其中該控制模組利用一輸入電流改變該第一發光二極體晶片之光源色溫或 /及該第二發光二極體晶片之光源色溫。 The package structure of the light-emitting diode according to claim 5, wherein the control module uses an input current to change the color temperature of the light source of the first light-emitting diode chip or / and the color temperature of the light source of the second LED chip. 如申請專利範圍第1項所述之發光二極體之封裝結構,更進一步設置一第三發光二極體晶片,該第三發光二極體晶片設置於容置槽內,並位於該第二發光二極體晶片之一側。 The package structure of the light-emitting diode according to the first aspect of the invention is further provided with a third light-emitting diode chip, the third light-emitting diode chip is disposed in the accommodating groove, and is located at the second One side of the light emitting diode chip. 一種發光二極體之封裝結構,其包含:一封裝體,其係具有一容置槽;一第一發光二極體晶片,其係設置於該容置槽內;以及一第二發光二極體晶片,其係設置於該容置槽內,且位於該第一發光二極體晶片之一側,並覆蓋一第一螢光粉層於該第一發光二極體晶片及該第二發光二極體晶片之上,再一第二螢光粉層覆蓋於該第一螢光粉層之上,並位於該第一發光二極體晶片上方。 A package structure of a light-emitting diode, comprising: a package body having a receiving groove; a first light-emitting diode chip disposed in the receiving groove; and a second light-emitting diode a body wafer disposed in the accommodating groove and located on one side of the first illuminating diode chip, and covering a first luminescent phosphor layer on the first illuminating diode chip and the second illuminating A second phosphor layer is overlaid on the first phosphor layer and above the first LED chip. 如申請專利範圍第8項所述之發光二極體的封裝結構,其中該第一發光二極體晶片與該第二發光二極體晶片發出之波長為360nm至480nm。 The package structure of the light-emitting diode according to claim 8, wherein the first light-emitting diode wafer and the second light-emitting diode wafer emit a wavelength of 360 nm to 480 nm. 如申請專利範圍第8項所述之發光二極體之封裝結構,其中該第一螢光粉層內之螢光粉係選自於紅色螢光粉、橙色螢光粉與深黃色螢光粉之組成的其中一種。 The package structure of the light-emitting diode according to claim 8, wherein the phosphor powder in the first phosphor layer is selected from the group consisting of red phosphor powder, orange phosphor powder and deep yellow phosphor powder. One of the components. 如申請專利範圍第8項所述之發光二極體之封裝結構,其中該第二螢光粉層內之螢光粉為黃色螢光粉。 The package structure of the light-emitting diode according to claim 8, wherein the phosphor powder in the second phosphor layer is yellow phosphor powder. 如申請專利範圍第8項所述之發光二極體之封裝結構,更進一步設置一控制模組,該控制模組分別電性連接於該第一發光二極體晶片與該第二發光二極體晶片,並且控制該第一發光二極體晶片與該第二發光二極體晶片各別單獨發光或共同發光。 The package structure of the light-emitting diode according to claim 8 is further provided with a control module electrically connected to the first light-emitting diode chip and the second light-emitting diode And controlling the first light emitting diode chip and the second light emitting diode chip to emit light or to emit light separately. 如申請專利範圍第12項所述之發光二極體之封裝結構,其中該控制模組利用一輸入電流改變該第一發光二極體晶片之光源色溫或 /及該第二發光二極體晶片之光源色溫。 The package structure of the light-emitting diode according to claim 12, wherein the control module uses an input current to change the color temperature of the light source of the first light-emitting diode chip or / and the color temperature of the light source of the second LED chip. 如申請專利範圍第8項所述之發光二極體之封裝結構,更進一步設置一第三發光二極體晶片,該第三發光二極體晶片設置於容置槽內,位於該第二發光二極體晶片之一側,且該第一螢光粉層包覆於該第三發光二極體晶片之發光路徑。 The package structure of the light-emitting diode according to the eighth aspect of the invention is further provided with a third light-emitting diode chip, wherein the third light-emitting diode chip is disposed in the receiving groove, and the second light-emitting device is located in the second light-emitting diode. One side of the diode chip, and the first phosphor layer is coated on the light-emitting path of the third LED chip.
TW104202961U 2015-02-26 2015-02-26 Light-emitting diode package structure TWM505707U (en)

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CN110630921A (en) * 2018-06-01 2019-12-31 宏齐科技股份有限公司 Handheld electronic device and its flip-chip light-emitting element with adjustable color temperature
CN111192868A (en) * 2018-12-07 2020-05-22 海迪科(南通)光电科技有限公司 A high CRI and high luminous efficiency package

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DE102016124873B4 (en) * 2016-12-19 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung White light source and method for producing a white light source
CN118281135B (en) * 2024-05-31 2024-08-16 江西省兆驰光电有限公司 White light lamp bead based on blue light LED chip and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN110630921A (en) * 2018-06-01 2019-12-31 宏齐科技股份有限公司 Handheld electronic device and its flip-chip light-emitting element with adjustable color temperature
TWI685988B (en) * 2018-06-01 2020-02-21 宏齊科技股份有限公司 Handheld electronic device and color temperature tunable flip-chip type light-emitting element thereof
CN111192868A (en) * 2018-12-07 2020-05-22 海迪科(南通)光电科技有限公司 A high CRI and high luminous efficiency package
CN111192868B (en) * 2018-12-07 2025-03-07 海迪科(南通)光电科技有限公司 A high-cdr and high-light-efficiency package

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