M365932M365932
五、新型說明： 【新型所屬之技術領域】 本創作係關於一種化學氣相沉積設備，尤指一種使用 於面板顯示器製造，或是太陽能薄膜生產中用於大尺寸基 5材的電漿辅助化學氣相沉積設備。 * 【先前技術】 隨著高科技產業的快速發展，電漿輔助化學氣相沉積 技術一直以來受到各界廣泛的重視及應用，特別是在半導 10體π件製程上的產品提升有著舉足輕重的地位。舉凡 TFT-LCD中多晶矽薄膜之製作，或是太陽能電池中矽晶片 基材與薄膜太陽能基板之製作，皆須使用電漿輔助化學氣 相沉積之裝置來進行。 決定未來太陽能電池能否日益普及之三大因素為 15 :、成本與價格，二、模組的效率，三、產能規模與利用 率。為求儘速促成太陽能電池之普遍化，經由不斷嘗試並 開發出更先進的相關製程設備是重要且必要的手段。 然而影響薄膜（amorph〇us以丨⑶⑴太陽能電池效能的 關鍵因素在於關鍵之PE_CVD(Plasma Enhanced Chemicai 2〇 vapor Deposition，電漿輔助化學氣相沉積）技術，主要之 問題點有（1)均勻度問題：因為不是整片矽晶圓，所以薄膜 均勻度會引響效能。（2)材料本身缺陷問題：因為薄膜材料 特丨生，表面的懸垂鍵（dangling b〇nds)的數目較多，一般使 氧氧了以填補懸垂鍵空缺，但過量的氫氣卻適得其反。 3 M365932 •Φψ 1- 補尼V. New description: [New technical field] This creation is about a chemical vapor deposition equipment, especially a plasma-assisted chemistry for the manufacture of panel displays or for the production of large-size base materials in solar film production. Vapor deposition equipment. * [Prior Art] With the rapid development of high-tech industry, plasma-assisted chemical vapor deposition technology has been widely used and applied by all walks of life, especially in the product promotion of semi-conductor 10-piece π-piece process has a pivotal position. . The fabrication of polycrystalline germanium films in TFT-LCDs, or the fabrication of germanium wafer substrates and thin film solar substrates in solar cells, must be carried out using plasma-assisted chemical vapor deposition equipment. The three factors that determine whether solar cells will become increasingly popular in the future are: 15, cost and price, second, module efficiency, and third, capacity scale and utilization. In order to promote the universalization of solar cells as quickly as possible, it is an important and necessary means to continuously try and develop more advanced related process equipment. However, the key factor affecting the effectiveness of the film (amorph〇us to 丨(3)(1) solar cell is the critical PE_CVD (Plasma Enhanced Chemicai 2〇vapor Deposition) technology. The main problems are (1) uniformity problem. : Because it is not a whole wafer, the uniformity of the film will cause the performance. (2) The defect of the material itself: Because the film material is special, the number of dangling b〇nds on the surface is large, generally Oxygen and oxygen to fill the vacancy of the dangling bond, but excessive hydrogen is counterproductive. 3 M365932 •Φψ 1-
在大量批次式ΡΕ-CVD設備中不易控制製程條件。（3)介面 (interface)問題：目前業界提供的大都為p-i-n結構之製程， 其中 i-層（i-layer)為碎奈米晶體（nanocrystalline silicon, grain size: 10〜lOOnm)，可作為吸光材料，且可以將薄膜太 5 陽能電池的光電轉換效率有效提升，但是由於矽奈米晶體 的晶粒較小，表面積較大，表面的懸垂鍵（dangling bonds) 的數目較多，因此會妨礙薄膜太陽能電池的效率進一步提 升，一般使用SiNx或是A1203薄膜，在i-層（矽奈米晶體）的 表面包覆一層絕緣層，可以有效降低表面懸垂鍵的密度， 10 進一步提高薄膜太陽能電池的效率。目前大量批次式無此 製程。（4)污染問題：大量批次式ΡΕ-CVD設備，使用同一 個真空反應腔體進行p-i-n結構沉積，其中摻雜氣體B2H6 或是PH3無法完全清除乾淨，會交替污染。影響薄膜層的 純度。（5)串聯結構式之新世代技術，大量批次式pe-cVD 15 設備無法同時備製。 化學氣相沉積（chemical vapor deposition，CVD)為一種 利用化學反應形成薄膜的鑛膜方式。而電漿辅助化學氣相 沉積（Plasma Enhanced Chemical Vapor Depositi〇n，PECVD) 則屬於化學氣相沉積的範疇，其主要製程是將氣體或單體 通入真空腔，利用電漿加速氣體及單體的化學反應，同時 於基材表面沉積薄膜。 如圖1A，其係為一習知之電漿辅助化學氣相沉積 (PECVD)裝置之示意圖。一般的電漿輔助化學氣相沉積裝 置包含有：一反應腔1〇 ; 一電極Η與一承載板16，一支樓 20 修正 補充 M365932 衍木17，皆配置於反應腔1〇内，此承載板16同時具有加熱 功能；一進氣裝置12與一排氣裝置13 ;以及射頻化 = 供應源14(用以提供電極n一射頻電源）。當欲增加沉積之 膜厚時，雖然可藉由提高射頻源之頻率來達成，但卻容易 5產生駐波效應（standing wave)。另外，由於承載板μ與電 «極11間之距離為製程參數中的一個重要條件，因此習知 • PECVD裝置係於反應腔1G下方裝設調整馬達_使承載 Φ 板丨6可上下移動。但此調整馬達再加上承載板16原本所需 之加熱及排1等機構，使得反應腔1〇下方之機械零件佔了 10非常大的體積，因此造成PECVD裝置之整體厚度無法減 少，同時因承載板長期加熱易產生變形，需有一個以上的 支樓衍架17來支樓固定，且因加熱承載台為可動式之結構 體，易在移動時產生搖晃偏轉等位置偏差，導致電極與基 板之距離偏差而使沉膜厚度之均勻度大受影響。故，當必 15須應用於大量生產、提高沉積臈厚、同時具有承載板與電 極距離可調式之功能'以及具有使裝置整體厚度減少的優 點時，傳統之裝置則必須再作改良，否則無法達成需求。 目前業界所使用在TFT-LCD中多晶矽薄膜之製作，或 '是太陽能電池中矽晶片基材與薄膜太陽能基板之製作的電 如衆輔助化學氣相沉積裝置主要包括：連續式pEcvD裝置、 批次式PECVD裝置、堆疊批次式、多腔集束式pECVD裝置 專〇 雖有 如圖1B所示為，其為一多腔集束式之示意圖。 良好之成膜品質控制與均勻度之優勢，但佔 此方式 地面積 5 M365932 大，且無批次大量生產之能力，成本過高是此系列機型之 缺點。 如圖2A以及2B所示，其為一連續式PECVD裝置之示 意圖。此連續式PECVD裝置係由複數個PECVD腔體2以串 5 聯方式組合而成。其中，PECVD腔體2之反應腔10内之相 對二側係分別裝設有一電極11，且電極係與進氣裝置12連 接；加熱板21係配置於反應腔中間位置，以同時提供熱源 給予左右方之基板15;反應腔10下方配置有排氣裝置13。 傳輸裝置19將基板載送連續傳輸通過各個PECVD腔體2， 10 使可形成厚度足夠之薄膜。然而，雖此連續式PECVD裝置 可製造足夠厚度之薄膜，其裝置整體所需的空間過大，因 此造成廠務成本過高。此外，若連續式PECVD裝置中之任 何一機台發生故障，則整條產線會受影響而被迫停止運 作，因此產量立刻降低。再者，更有腔體2之間互相污染的 15 問題難以解決。 另外一種PECVD裝置為批次式PECVD裝置。如圖3A 與3B所示，其係一種批次式PECVD裝置所使用之治具。此 治具中同時具有多個電極11，每個電極11皆單獨與一射頻 (RF)電源供應源14連接，而每一電極11與電極11之間皆具 20 有一玻璃夾治位置22。當使用此裝置時，首先將待加工之 基板（圖未示）插入治具中之玻璃夾治位置22，基板（圖未示） 插入之數量可為數十片以上，接著將此治具整個放置於一 熱爐中進行加熱，加熱完畢後導入射頻（RF)電源使反應進 行。然而，雖然此種方式可同時處理數十片以上之基板， 6 M365932 MS] 補充 但時常由於射頻(RF)電源供應源14數量過多而造成相互之 間的干擾，使得故障機率相較其他裝置高出許多。並且， 反應氣體無法均勻分散，因而造成沉膜厚度嚴重不均勻的 問題時常出現。此法可以大量批次生產來降低成本，但在 5 ^構内無承載之加熱裝置，以及良好之氣體分散機構來進 •仃均勻度之控制，因此沉膜的品質無法有效的控制。 • 另外一種PECVD裝置為堆疊批次式PECVD裝置。如圖 4B所示，其係一個反應單元53内堆疊多個PECVD裝置23 所使用之結構。此反應單元53中同時具有多個電漿辅助化 10學氣相沉積裝置23，每個裝置23皆具有如圖4A之結構，其 匕括.電極11與一承載板16，皆配置於裝置23内，此承 載板16不具有加熱功能，因此需在反應腔10的上下處另設 置加熱板；一進氣裝置12與一個以上排氣裝置13 ;以及射 頻（RF)電源供應源14(用以提供電極u一射頻電源）。電極 15 11皆單獨與一射頻（RF)電源供應源14連接。當使用此裝置 時’雖然此種方式可同時處理數十片以上之基板，但時常 由於各個反應腔10之内部電極距離為固定型式，因此沉膜 的速度降低。此法可以大量批次生產來降低成本，但在機 構無法改變承載板16與電極11間之距離，製程參數中的一 20個重要條件無法控制，因此沉膜的品質無法有效的控制。 電聚輔助化學氣相沉積（PECVD)裝置較佳係具有以下 特點：體積小、降低廠務成本、可大量生產、有效避免駐 波效應、無污染問題、有效避免射頻（RF)電源供應源之間 7 M365932Process conditions are not easily controlled in a large number of batch ΡΕ-CVD equipment. (3) Interface problem: Most of the current industry provides a pin structure process, in which the i-layer is a nanocrystalline silicon (grain size: 10~100 nm), which can be used as a light absorbing material. Moreover, the photoelectric conversion efficiency of the thin film solar cell can be effectively improved, but since the crystal grain of the nano crystal is small, the surface area is large, and the number of dangling bonds on the surface is large, the film is hindered The efficiency of the solar cell is further improved. Generally, SiNx or A1203 film is used, and an insulating layer is coated on the surface of the i-layer (矽 nanocrystal), which can effectively reduce the density of the surface dangling bond, and 10 further improve the efficiency of the thin film solar cell. . There are currently a large number of batches without this process. (4) Pollution problem: A large number of batch-type ΡΕ-CVD equipment uses the same vacuum reaction chamber for p-i-n structure deposition, in which the doping gas B2H6 or PH3 cannot be completely removed and will be polluted alternately. Affect the purity of the film layer. (5) New generation technology of serial structure type, a large number of batch pe-cVD 15 equipment cannot be prepared at the same time. Chemical vapor deposition (CVD) is a method of forming a thin film by chemical reaction. Plasma Enhanced Chemical Vapor Deposition (PECVD) belongs to the category of chemical vapor deposition. The main process is to pass gas or monomer into the vacuum chamber, and use plasma to accelerate gas and monomer. The chemical reaction simultaneously deposits a thin film on the surface of the substrate. Figure 1A is a schematic illustration of a conventional plasma assisted chemical vapor deposition (PECVD) apparatus. A general plasma-assisted chemical vapor deposition apparatus comprises: a reaction chamber 1〇; an electrode crucible and a carrier plate 16, and a building 20 modified M365932 derivative wood 17, which are disposed in the reaction chamber 1〇, the bearing The board 16 has both a heating function; an air intake unit 12 and an exhaust unit 13; and a radio frequency=supply source 14 (for providing an electrode n-an RF power source). When it is desired to increase the film thickness of the deposition, although it can be achieved by increasing the frequency of the RF source, it is easy to generate a standing wave. In addition, since the distance between the carrier plate μ and the electric «pole 11 is an important condition in the process parameters, it is known that the PECVD device is provided with an adjustment motor below the reaction chamber 1G so that the carrier Φ plate 6 can be moved up and down. However, the adjustment motor and the heating and row 1 mechanism originally required for the carrier plate 16 make the mechanical parts under the reaction chamber 1 occupy a very large volume, so that the overall thickness of the PECVD device cannot be reduced, and The long-term heating of the load-bearing plate is easy to be deformed. It is necessary to have more than one branch truss 17 to fix the branch, and because the heating platform is a movable structure, it is easy to generate a positional deviation such as shaking and deflection when moving, resulting in electrodes and substrates. The distance deviation causes the uniformity of the thickness of the film to be greatly affected. Therefore, when the must 15 should be applied to mass production, increase the thickness of the deposit, and the function of the adjustable distance between the carrier and the electrode, and the advantage of reducing the overall thickness of the device, the conventional device must be improved, otherwise it cannot be improved. Reaching the demand. At present, the fabrication of polycrystalline germanium films in TFT-LCDs, or the fabrication of germanium wafer substrates and thin film solar substrates in solar cells, mainly includes: continuous pEcvD devices, batches. The PECVD device, the stacked batch type, and the multi-cavity clustering pECVD device are specifically shown in FIG. 1B, which is a schematic diagram of a multi-cavity cluster type. Good film quality control and uniformity advantage, but the area of this type is 5 M365932, and there is no batch mass production capacity. The high cost is the shortcoming of this series. As shown in Figures 2A and 2B, it is a schematic of a continuous PECVD apparatus. This continuous PECVD apparatus is a combination of a plurality of PECVD chambers 2 in a series. Wherein, the opposite sides of the reaction chamber 10 of the PECVD chamber 2 are respectively provided with an electrode 11 and the electrodes are connected to the air inlet device 12; the heating plate 21 is disposed at the middle of the reaction chamber to provide a heat source at the same time. The substrate 15 is disposed; an exhaust device 13 is disposed below the reaction chamber 10. The transport device 19 continuously transports the substrate through the respective PECVD chambers 2, 10 to form a film of sufficient thickness. However, although the continuous PECVD apparatus can produce a film having a sufficient thickness, the space required for the entire apparatus is too large, so that the factory cost is too high. In addition, if any of the machines in the continuous PECVD apparatus fails, the entire production line is affected and forced to stop operation, so the output is immediately reduced. Furthermore, the problem of more contamination between the chambers 2 is difficult to solve. Another type of PECVD apparatus is a batch type PECVD apparatus. As shown in Figures 3A and 3B, it is a jig used in a batch type PECVD apparatus. The fixture also has a plurality of electrodes 11, each of which is individually connected to a radio frequency (RF) power supply source 14, and each of the electrodes 11 and 11 has a glass-clamping location 22. When the device is used, the substrate to be processed (not shown) is first inserted into the glass clamping position 22 in the jig, and the number of substrates (not shown) can be inserted into dozens or more, and then the jig is entirely It is placed in a hot furnace for heating, and after heating, a radio frequency (RF) power source is introduced to carry out the reaction. However, although this method can process more than dozens of substrates at the same time, 6 M365932 MS] supplements, but often due to the excessive number of radio frequency (RF) power supply sources 14 causing mutual interference, making the probability of failure higher than other devices. A lot. Further, the reaction gas cannot be uniformly dispersed, so that a problem of severe uneven thickness of the film is often caused. This method can reduce the cost by mass production, but the heating device without load in the 5 ^ structure and the good gas dispersion mechanism to control the uniformity of the film can not effectively control the quality of the film. • Another PECVD device is a stacked batch PECVD device. As shown in Fig. 4B, it is a structure in which a plurality of PECVD devices 23 are stacked in one reaction unit 53. The reaction unit 53 has a plurality of plasma-assisted 10 vapor deposition devices 23, each of which has a structure as shown in FIG. 4A, which includes an electrode 11 and a carrier plate 16, both of which are disposed in the device 23. The carrier plate 16 does not have a heating function, so a heating plate is additionally disposed at the upper and lower sides of the reaction chamber 10; an air intake device 12 and more than one exhaust device 13; and a radio frequency (RF) power supply source 14 (for Provide electrode u a radio frequency power supply). The electrodes 15 11 are each individually connected to a radio frequency (RF) power supply source 14. When such a device is used, although this method can process tens or more substrates at the same time, the speed of the film is often lowered because the internal electrode distance of each reaction chamber 10 is a fixed type. This method can reduce the cost by mass production, but the mechanism cannot change the distance between the carrier plate 16 and the electrode 11, and one of the 20 important conditions in the process parameters cannot be controlled, so the quality of the film cannot be effectively controlled. The electropolymerization assisted chemical vapor deposition (PECVD) device preferably has the following characteristics: small volume, low factory cost, mass production, effective avoidance of standing wave effect, no pollution problem, and effective avoidance of radio frequency (RF) power supply source. 7 M365932
额II 的干擾，維L谷易、電極與基板間之距離可調、裝置整體 厚度降低、氣場均勾性佳、加熱分布均勻等。 因此’本產業中s須—種新的電聚輔助化學氣相沉積 (PECVD)裝置之4 ,可解決上述之種種問題，並同時具 5 有上述之優點。 【新型内容】 本創作之電漿輔助化學氣相沉積（PECVD)裝置，包-括：反應腔、一承載板、一電極、多個電極支撐件、一進 φ 10氣裝置、以及排氣裝1。高度調整件配置於反應腔之外。 承載板配置於反應腔内。電極對應承載板而配置於反應腔 内，並與承載板之間留有一餘隙。電極支撐件位於電極之 一側並抵頂電極，且電極支撐件係穿出反應腔並連接至高 度調整件《進氣裝置及排氣裝置係分別連接至反應腔。 15 本創作之電漿輔助化學氣相沉積裝置，由於承載板為 固定式之設計，因此反應腔下方機械體積可得到大幅減 少，因此可使電漿輔助化學氣相沉積裝置整體厚度下降。 電極支撐件抵頂電極並連接至一高度調整件，因此本創作 之電漿輔助化學氣相沉積裝置中，電極與承載板之間之餘 20隙可進行微調，且可利於基板進出時之傳輸動作流程。 _ 本創作之電漿輔助化學氣相沉積裝置，由於承載板加 -熱器為固定式之設計，抽氣口可设置於承載板之中心位 置，可有效的減少抽氣不均勻之現象，且由於支樓柱可有 效的分配在適當位置，因此得以提升周圍角落的抽氣速 8 M365932 僻，1脾日修正 補克The interference of the amount II, the dimension L valley, the distance between the electrode and the substrate is adjustable, the overall thickness of the device is reduced, the gas field is well hooked, and the heating distribution is uniform. Therefore, in the industry, a new electropolymerization assisted chemical vapor deposition (PECVD) device 4 can solve the above problems, and at the same time has the above advantages. [New content] The plasma-assisted chemical vapor deposition (PECVD) device of the present invention includes: a reaction chamber, a carrier plate, an electrode, a plurality of electrode supports, a gas inlet device, and a venting device. 1. The height adjustment member is disposed outside the reaction chamber. The carrier plate is disposed in the reaction chamber. The electrode is disposed in the reaction chamber corresponding to the carrier plate, and a gap is left between the electrode and the carrier plate. The electrode support member is located on one side of the electrode and abuts the top electrode, and the electrode support member passes through the reaction chamber and is connected to the height adjustment member. "The intake and exhaust devices are respectively connected to the reaction chamber. 15 In the plasma-assisted chemical vapor deposition apparatus of this creation, since the carrier plate is of a fixed design, the mechanical volume under the reaction chamber can be greatly reduced, so that the overall thickness of the plasma-assisted chemical vapor deposition apparatus can be reduced. The electrode support member abuts the top electrode and is connected to a height adjusting member. Therefore, in the plasma-assisted chemical vapor deposition device of the present invention, the remaining 20 gap between the electrode and the carrier plate can be finely adjusted, and the substrate can be transported when it enters and exits. Action flow. _ The plasma-assisted chemical vapor deposition device of this creation, because the carrier plate heater-heater is a fixed design, the suction port can be placed at the center of the carrier plate, which can effectively reduce the phenomenon of uneven pumping, and The column column can be effectively distributed in the proper position, so the pumping speed in the surrounding corner can be improved. 8 M365932 secluded, 1 spleen correction gram
10 1510 15
率，有助於製程腔體内氣場之分佈均勻 均勻度有較優異之表現。 而 致成膜厚度 之 -預Ϊ = Γ辅助化學氣相沉積裝置中，反應腔内壁面 有置有一定位塊’電極支樓件較佳可具 有-擋止件’且擋止件與定位塊較佳係相對應配置。因此 ^立塊可用於將擋止件抵擋於i定位置，使電極與承載 板之間之餘隙可為一固定值。擋止件之上可更包括一墊 用於調整電極之停止高度。亦即，藉由改變墊塊的厚 度’則可改變電極與承載板之間之餘隙的大小，以達到改 變電極與基板間之距離之功能，且刊料到固定電極與 承載台之平行度之要求，並使成膜厚度均勻性得到良好之 大幅提升。墊塊之材質較佳為介電單元之 化紹、鐵氣龍、石英、或其他陶究材料。 更“氧 上述之電漿輔助化學氣相沉積裝置中，進氣裝置較佳 穿過反應腔並連接至電極。電極表面較佳具有多數個孔 /同使氣體由進氣裝置進入電極内部後，由孔洞排入至反 應腔中。 上述之電漿輔助化學氣相沉積裝置中，反應腔較佳包 括有一上蓋以及一腔體。上蓋較佳為一可掀式上蓋，使維 20修期間可藉由將上蓋掀起而對腔體内部之元件進行維修。 上述之電漿輔助化學氣相沉積裝置中，承載板較佳為 一加熱式承載板’以提供加熱基板之所需。 9 M365932 Μ㈣修正 補充 上述之電聚辅助化學氣相沉積裝置中，可更包括兩個 以上之支撑柱Μ系配置於承載板之下方並抵頂承載板，並 作為支撐承載板所用。 本創作更提供-種電漿輔助化學氣相沉積設備，包 5括：-載入單元、一輸出單元、至少一反應單元、以及一 傳輸單7G。其中，载入單元、輪出單元、以及反應單元係 圍繞傳輸單元之周圍而配置，並分別與傳輸單元連接；或 ，置於該傳輸單元之—側，並分別與傳輪單元連接。載入 單元可使基板載入本設備中，輸出單元用以輸出基板。反 10應單元之數量無特別限制可包括1-3個或更多，是依照需求 而調整。反應單元各自獨立地包括二個以上之上述電漿輔 助化學氣相沉積裝置，且電襞輔助化學氣相沉積裝置係互 相堆疊而配置。 本創作之電漿輔助化學氣相沉積設備，由於其可使基 15板獨立地於各個電漿輔助化學氣相沉積裝置中反應，因此 互相之間無污染之問題發生。 本創作中，由於設備申電漿輔助化學氣相沉積裝置之 承載板為固定式之設計，因此反應腔下方機械體積可得到 大幅減少，而使電漿輔助化學氣相沉積裝置整體厚度下 2〇降，進一步可互相堆疊配置而形成一反應單元，因此大幅 減少了電漿輔助化學氣相沉積設備整體所需的體積，有效 降低廠務成本。 本創作之設備之電漿輔助化學氣相沉積裝置中，由於 電極支撐件的設計（電極支撐件抵頂電極並連接至一高度 M365932 調整件）而使得電極與承載板之間之餘隙可進行微調，進一 步使得產物（非晶矽a-Si)之膜厚與品質可受到良好的控 制’進而可以生產高品質串聯式結構（Tandem)的太陽能基 板（微晶石夕V c-Si )薄膜。 5 另外’本創作之設備中所裝設之反應單元的數目可以 依所需增加或減少’且每一反應單元中之電漿輔助化學氣 相沉積裝置亦可依所需作增減，因此可達到產量提升的目 標。 本創作之電漿辅助化學氣相沉積設備中，每一電聚輔 10助化學氣相沉積裝置較佳可設置有多數個滾輪，且反應單 元較佳係對應滾輪設置有執道。如此，當維修期間，反應 單7L中之每一電漿輔助化學氣相沉積裝置可藉由此滚輪及 執道之組合而容易地拉出進行保養。 本創作之電漿輔助化學氣相沉積設備中，傳輸單元較 15 佳包括有一機械手臂。 【實施方式】 [實施例1] 如圖5A所示，本實施例之電漿輔助化學氣相沉積 (PECVD)裝置3’包括-反應腔3〇、一承載板％、—電極3卜 二個以上電極支擇件38、—進氣裝置32、以及排氣裝置M。 -中反應腔3 0可依照需求為—圓形反應腔或—矩形反應 腔。高度調整件39配置於反應腔之外。承載板36配置^ 反應腔3〇内’用於承載待沉積之基板35。電極31對應承載 20 M365932 板36而配置於反應腔30内，並與承載板36之間留有一餘隙 d。電極31與一射頻（RF)電源供應源34連接，以提供電極3 i 一射頻電源。餘隙d係為製程中一可調參數，藉由改變餘隙 d的大小而可對所欲生長之薄膜特性作微調整。電極支撐件 5 38位於電極31之一側並抵頂電極31，且電極支撐件％穿出 反應腔30並連接至而度調整件39。高度調整件39包含有一 馬達40或氣壓缸44，可使電極支撐件38上下移動，藉由此 電極支樓件38以及兩度調整件39的運作，電極31之高度可 作調整，而使得電極31與承載板36之間之餘隙4可進行微 H)調。進氣裝置32連接至反應腔30,並提供反應所需氣體。 排氣裝置33連接至反應腔30,以作為排氣所用。 如圖5B所示，一傳統之加熱式承載機構係使用單一中 心支擇柱37以提供支撑功能，在升降動作後常會產生移動 時產生搖晃偏轉等現象，且在傳統支撐柱僅使用一支的狀 15況下，承載板16因加熱器長期加熱產生變形，因此需要有 良好的支樓衍架17來防上變形。如圖5C所示，本創作使用 固定式2支以上的支撐枝37，κι 文杈往37因此不會有位置偏差問題產 生’同時可有效的保持電極之支撑平行度。 如圖5D及5Ε所不’其分別為_習知以及本創作之承載 20板下方t氣場均勻性示意圖。—般而t，支撐柱37的安排 會影響抽氣〇 13的設置位置，進而影響抽氣速率的均句 性。如圖5D’傳統的支撑柱37的位置設計會使抽氣口 "偏 移’而造成抽氣時周圍四個角的抽氣速率會有極大的不對 稱，致使抽氣不均勻。但在本創作中承載板為固定式之設 12 M365932 計’如圖5E所示，抽氣口13設置於承载板之中心位置，因 此可有效的減少抽氣不均勻之現象，且 效的分配在適當位置，因此得以提升周園角二= 率，有助於製程腔體内氣場之分佈均勾，而使成膜厚度之 5均勻度有較優異之表現。 j創作之電聚輔助化學氣相沉積裝置，由於承載板％ 為口疋式之叹„十，因此反應腔3〇下方機械體積可得到大幅 減少’可使電漿輔助化學氣相沉積裝置3整體厚度下降。電 極支擇件38抵頂電極31並連接至一高度調整㈣，因此本 >創作之電襞辅助化學氣相沉積裝置3中’電極 之間之餘隙d可進行微調。 戰极 15 20 本實施例中，反應腔30内壁面一預定位置配置有一定 ^41 ’ ^電極支撐件％具有—擋止件42 ’且擋止件42盘 二立配置。定位塊41是用於將擋止件42抵擋於 值特疋位置，使電極31與承载板36之間之餘隙d可為一固定 j ^施例中，擋止件42之上更包括一塾塊Μ，是用於 °電極31之停止高度，㈣% 可改變電極31與該承載板36之 的1，則 之材晳P社*入 ]之餘隙d的大小。墊塊43 =為"電單元之材料，更佳為氧化 石央、或其他陶竟材料。 取亂龍 ，進氣以32穿過反絲 3卜電極31表面具有多數㈣至電極 匕刃（圖未不），使氣體由進氣 13 M365932 裝^進人電㈣㈣後，由孔洞（圖未示）排人至反應腔 30内0 本實施例中，反應腔30包括有一上蓋3〇2以及一腔體 3〇1。上蓋302為-可掀式上蓋地，使維修期間可藉由將上 蓋302掀起而對腔體301内部之 ， 加熱基板之所需。 [實施例2 ] 如圖6A、圖6B，本實施例提供一種電漿辅助化學氣相 沉積設備5,包括：-載入單元5卜一輸出單元52、至少一 ^單元53、錢-傳輸單元54。•單^可使基 未不）載入本設備5中，輪 T掏出早TL52用以輸出基板（圖未 15 20 示）。本實施例之電漿輔助化學氣相沉積設備5包括有四個 反應單元53,但不限於此，亦可包W或更多，係依03 需求而調整。載入單元51、輸出單元52、以及反應單以 係圍繞傳輸單元54之周圍而配置，並分別與傳輸單元叫 接。反應單元53可各自獨立地包括二個以上電聚辅助化學 氣相沉積裝置3，且電漿輔助化學氣相沉積裝置3之間是互 相堆疊而配置。本實施例中，每-反應單元53係包括有三 個電浆輔助化學氣相沉積裝置3。其電衆輔助化學氣相沉； 裝置3係如同實施例1中所述之電漿輔魏學氣相沉積裝置 3 ’因此裝置3之内部元件之細節則不在此贅述。 本創作之電榮輔助化學氣相沉積設備5，由於直可使 基板獨立地於各個電漿輔助化學氣相沉«置3中反應，因 14 25 M365932 此互相之間污染性可降至最低。另外，由於電漿辅助化學 氣相沉積裝置3之承載板36為固定式之設計，因此反應腔3〇 下方機械體積可得到大幅減少，而使電槳輔助化學氣相沉 積裝置3整體厚度下降，進一步可互相堆疊配置而形成一反 5應單兀5，因此大幅減少了電漿輔助化學氣相沉積設備5整 .體所需的體積，有效降低廠務成本。電漿輔助化學氣相沉 積裝置3巾電極支料％的設計（電極支料地頂電極Η 並連接至一馬度調整件39)，使得電極31與該承載板％之間 之餘隙d可進行微調，使得產物之膜厚可受到良好的控制。The rate helps the uniform distribution of the gas field in the process chamber to have an excellent performance. In the Γ-assisted chemical vapor deposition apparatus, the inner wall surface of the reaction chamber is provided with a positioning block. The electrode branch member preferably has a stopper and the stopper is compared with the positioning block. The best system should be configured. Therefore, the vertical block can be used to resist the stopper to the i position, so that the clearance between the electrode and the carrier plate can be a fixed value. The pad may further include a pad for adjusting the stopping height of the electrode. That is, by changing the thickness of the spacer, the gap between the electrode and the carrier can be changed to achieve the function of changing the distance between the electrode and the substrate, and the parallelism between the fixed electrode and the carrier is reported. The requirements and uniformity of film thickness uniformity are greatly improved. The material of the spacer is preferably a dielectric unit, an iron gas dragon, a quartz, or other ceramic material. Further, in the plasma-assisted chemical vapor deposition apparatus described above, the gas inlet device preferably passes through the reaction chamber and is connected to the electrode. The electrode surface preferably has a plurality of holes/the same gas, and then the gas enters the electrode from the inlet device. The above-mentioned plasma-assisted chemical vapor deposition device preferably includes an upper cover and a cavity. The upper cover is preferably a sizable upper cover, which can be used during the maintenance of the dimension 20 The components inside the cavity are repaired by picking up the upper cover. In the plasma assisted chemical vapor deposition apparatus described above, the carrier plate is preferably a heated carrier plate to provide the need to heat the substrate. 9 M365932 四 (4) Correction Supplement In the above-mentioned electro-convex auxiliary chemical vapor deposition device, more than two supporting columns can be arranged under the carrier plate and abut the supporting plate, and used as a supporting carrier plate. An auxiliary chemical vapor deposition apparatus, comprising: a loading unit, an output unit, at least one reaction unit, and a transport unit 7G, wherein the loading unit, the wheel unit, and the counter The units are arranged around the circumference of the transmission unit and respectively connected to the transmission unit; or, placed on the side of the transmission unit, and respectively connected to the transmission unit. The loading unit can load the substrate into the device, the output unit For the output of the substrate, the number of the counter units is not particularly limited and may include one to three or more, which are adjusted according to requirements. The reaction units each independently include two or more of the above plasma-assisted chemical vapor deposition devices. And the electro-assisted chemical vapor deposition apparatus is stacked on top of each other. The plasma-assisted chemical vapor deposition apparatus of the present invention can make the base 15 plate react independently in each plasma-assisted chemical vapor deposition apparatus, thereby There is no pollution problem between each other. In this creation, since the carrier plate of the equipment-assisted plasma-assisted chemical vapor deposition device is of a fixed design, the mechanical volume under the reaction chamber can be greatly reduced, and plasma-assisted chemistry The vapor deposition apparatus has a total thickness of 2 〇, and can be further stacked on each other to form a reaction unit, thereby greatly reducing plasma assist The overall required volume of the chemical vapor deposition equipment effectively reduces the cost of the factory. In the plasma-assisted chemical vapor deposition apparatus of the device of the present invention, due to the design of the electrode support (the electrode support abuts the electrode and is connected to a height) M365932 adjustment piece) allows the clearance between the electrode and the carrier plate to be fine-tuned, further enabling the film thickness and quality of the product (amorphous 矽a-Si) to be well controlled', thereby producing a high-quality tandem structure ( Tandem) Solar Substrate (Crystalline V c-Si) Film 5 In addition, 'the number of reaction units installed in the device of this creation can be increased or decreased as needed' and the plasma in each reaction unit The auxiliary chemical vapor deposition device can also be increased or decreased as needed, thereby achieving the goal of increasing the yield. In the plasma-assisted chemical vapor deposition device of the present invention, each of the electro-chemical auxiliary chemical vapor deposition devices is preferably used. A plurality of rollers can be provided, and the reaction unit is preferably provided with a corresponding roller. Thus, during maintenance, each of the plasma-assisted chemical vapor deposition apparatuses of the reaction unit 7L can be easily pulled out for maintenance by the combination of the roller and the road. In the plasma-assisted chemical vapor deposition apparatus of the present invention, the transmission unit preferably includes a robot arm. [Embodiment] [Embodiment 1] As shown in Fig. 5A, the plasma-assisted chemical vapor deposition (PECVD) apparatus 3' of the present embodiment includes - a reaction chamber 3, a carrier plate %, an electrode 3, and two The above electrode support member 38, the intake device 32, and the exhaust device M. - The middle reaction chamber 30 can be a circular reaction chamber or a rectangular reaction chamber as required. The height adjustment member 39 is disposed outside the reaction chamber. The carrier plate 36 is disposed within the reaction chamber 3 for carrying the substrate 35 to be deposited. The electrode 31 is disposed in the reaction chamber 30 corresponding to the 20 M365932 plate 36, and a gap d is left between the electrode plate 36 and the carrier plate 36. The electrode 31 is coupled to a radio frequency (RF) power supply source 34 to provide an electrode 3 i to a radio frequency power source. The clearance d is an adjustable parameter in the process, and the characteristics of the film to be grown can be finely adjusted by changing the size of the clearance d. The electrode support member 5 38 is located on one side of the electrode 31 and abuts against the top electrode 31, and the electrode support member is passed through the reaction chamber 30 and connected to the adjustment member 39. The height adjusting member 39 includes a motor 40 or a pneumatic cylinder 44 for moving the electrode support member 38 up and down. By the operation of the electrode branch member 38 and the two-degree adjusting member 39, the height of the electrode 31 can be adjusted to make the electrode The clearance 4 between the 31 and the carrier plate 36 can be micro-H) adjusted. Intake unit 32 is coupled to reaction chamber 30 and provides the gas required for the reaction. An exhaust device 33 is connected to the reaction chamber 30 for use as an exhaust gas. As shown in FIG. 5B, a conventional heated load-bearing mechanism uses a single center-retaining column 37 to provide a supporting function, which often causes a wobble deflection when moving, and only uses one in a conventional support column. In the case of the shape 15, the carrier plate 16 is deformed by the long-term heating of the heater, so that it is necessary to have a good branch truss 17 to prevent deformation. As shown in Fig. 5C, the present invention uses a fixed support of more than two support branches 37, κι 杈 37 37 so that there is no problem of positional deviation' while effectively maintaining the support parallelism of the electrodes. 5D and 5Ε are respectively _ conventional and the schematic diagram of the uniformity of the gas field below the 20-plate. Typically, the arrangement of the support columns 37 affects the location of the pumping rafts 13, which in turn affects the uniformity of the pumping rate. The positional design of the conventional support post 37 as shown in Fig. 5D' causes the suction port to be "shifted" to cause a great asymmetry in the pumping rate of the four corners around the pumping, resulting in uneven pumping. However, in the present invention, the carrier plate is a fixed type of 12 M365932. As shown in FIG. 5E, the air suction port 13 is disposed at the center of the carrier plate, so that the phenomenon of uneven pumping can be effectively reduced, and the effect is distributed. Appropriate position, so that the Zhouyuan angle 2 = rate can be improved, which helps to distribute the gas field in the process chamber, and the uniformity of the film thickness is better. j created the electro-adhesive auxiliary chemical vapor deposition device, because the carrier plate % is the mouth-like sigh „10, so the mechanical volume under the reaction chamber 3〇 can be greatly reduced' can make the plasma-assisted chemical vapor deposition device 3 as a whole The thickness of the electrode is lowered. The electrode support member 38 is abutted against the top electrode 31 and connected to a height adjustment (4). Therefore, the gap d between the electrodes in the electro-assisted chemical vapor deposition apparatus 3 of the present invention can be finely adjusted. 15 20 In this embodiment, a predetermined position of the inner wall surface of the reaction chamber 30 is disposed with a certain amount of the electrode support member % having a stopper member 42' and the stopper member 42 is disposed in two positions. The positioning block 41 is for The stop member 42 is resisted at the value-specific position, so that the clearance d between the electrode 31 and the carrier plate 36 can be a fixed one. In the embodiment, the stopper member 42 further includes a cymbal block, which is used for ° The stop height of the electrode 31, (4)% can change the size of the gap d of the electrode 31 and the carrier plate 36, and the material is clear. The pad 43 = is the material of the electric unit. More preferably for oxidized stone, or other ceramic materials. Take the dragon, the air intake through 32 through the anti-wire 3 The surface of the pole 31 has a plurality of (four) to electrode edge (not shown), so that the gas is loaded into the human body (4) (4) by the air inlet 13 M365932, and is discharged into the reaction chamber 30 by a hole (not shown). The reaction chamber 30 includes an upper cover 3〇2 and a cavity 3〇1. The upper cover 302 is a top cover that can be used to lift the upper surface of the cavity 301 by lifting the upper cover 302 during maintenance. [Embodiment 2] As shown in FIG. 6A and FIG. 6B, the present embodiment provides a plasma-assisted chemical vapor deposition apparatus 5, comprising: a loading unit 5, an output unit 52, at least one unit 53, and money. The transmission unit 54.• can be loaded into the device 5, and the wheel T is taken out to output the substrate (not shown in Fig. 15 20). The plasma-assisted chemical vapor deposition device of the embodiment 5 includes four reaction units 53, but is not limited thereto, and may be W or more, adjusted according to the requirements of 03. The loading unit 51, the output unit 52, and the reaction list surround the periphery of the transmission unit 54. Configuration, and respectively connected to the transmission unit. The reaction unit 53 can independently include two or more The poly-assisted chemical vapor deposition device 3 and the plasma-assisted chemical vapor deposition device 3 are arranged to be stacked one on another. In the present embodiment, each of the reaction units 53 includes three plasma-assisted chemical vapor deposition devices 3 The electrician assists the chemical vapor deposition; the device 3 is the same as the plasma-assisted vapor deposition apparatus 3 described in the first embodiment. Therefore, the details of the internal components of the device 3 are not described here. The auxiliary chemical vapor deposition apparatus 5 can minimize the contamination of each other due to the direct reaction of the substrate to the respective plasma-assisted chemical vapor deposition, because of the 14 25 M365932. In addition, since the carrier plate 36 of the plasma-assisted chemical vapor deposition device 3 is of a fixed design, the mechanical volume under the reaction chamber 3 can be greatly reduced, and the overall thickness of the electric blade-assisted chemical vapor deposition device 3 is decreased. Further, they can be stacked on each other to form a reverse 5 兀5, thereby greatly reducing the volume required for the plasma-assisted chemical vapor deposition apparatus 5, and effectively reducing the factory cost. The plasma-assisted chemical vapor deposition device has a design of the electrode material % (electrode support top electrode Η and is connected to a horse adjuster 39) so that the gap d between the electrode 31 and the carrier plate % can be Fine tuning is performed so that the film thickness of the product can be well controlled.
H)另外，電衆辅助化學氣相沉積設備5中所裝設之反應單元W 的數目可以依所需增加或減少，且每一反應單元53中之電 漿辅助化學IU目沉積裝置3亦可依所需作增減，因此可達到 產量提升的目標。 本實施例中，每一電漿辅助化學氣相沉積裝置3係設 15 f有多數個滾輪55’而反應單元对對應此滾輪設置有軌 ^二如此’當維修期間，反應單心中之每—電聚辅助 #旦乳相沉積裝置3可藉由此滾輪55及執道56之組合而容 易地拉出進行保養。 20 本實施例中，傳輸單元54係包括有一機械手臂541， 以作為傳送基板之用途。 t實施例中’反應腔30包括有一上蓋3〇2以及一腔體 盍302為-可掀式上蓋搬，使維修期間可藉由將上 〇2掀起而對腔體3〇1内部之元件進行維修。 25 [實施例3 ] 15 M365932 如圖7A、圖7B、以及圖7C所示，本實施例提供一種 電漿輔助化學氣相沉積設備，包括：一載入單元、一輸 出單兀52、至少一反應單元53、以及一傳輸單元54。載入 單元51可使基板（圖未示）載入本設備5中，輸出單元52用以 5輸出基板（圖未示）。本實施例之電漿辅助化學氣相沉積設 備5包括有四個反應單元53，但不限於此，亦可包括ι·3個 或更多，係依照需求而調整。載入單元51、輸出單元52、 以及反應單元53係配置於傳輸單元54之一側，並分別與傳 輸單元54連接。反應單元53可各自獨立地包括二個以上電 Π)渡輔助化學氣相沉積裝置3,且電浆輔助化學氣相沉積裝置 3之間是互相堆疊而配置。本實施例中，每—反應單心 係包括有三個電漿輔助化學氣相沉積裝置3。其電聚辅助化 學氣相沉積裝置3係如同實施例i中所述之電_助化學氣 相沉，裝置3’因此裝置3之内部元件之細節與反應單元5 !5 之細郎則不在此費述。 本創作之電聚辅助化學氣相沉積設備，可將設備之排 列方式由環形圍繞方式改成矩陣形式，對工廠之設備生產 動線流暢有極大之幫助。 上述實施例僅係為了方便說明而舉例而已，本創作所 20主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 【圖式簡單說明】 16 M365932 圖1A係一習知之電漿輔助化學氣相沉積（PECVD)裝置之 示意圖。 圖1B係一習知之電漿輔助化學氣相沉積（PECVD)多腔集束 裝置之示意圖。 5 圖2A—習知之連續式PECVD單一反應腔機構之示意圖。 圖2B係一習知之連續式PECVD裝置之示意圖。 圖3A係一習知之批次式PECVD單一反應腔機構之示意圖。 圖3B係一習知之批次式PECVD裝置所使用之治具之示意 圖。 10 圖4A—習知之堆疊批次式PECVD單一反應腔機構之示意 圖。 圖4B係一習知之堆疊批次式PECVD裝置之示意圖。 圖5 A係本創作一較佳實施例之化學氣相沉積裝置之示意 圖。 15 圖5B為一習知之加熱式承載機構之示意圖。 圖5C為本創作之承載機構之示意圖。’ 圖5D為習知之承載板下方之氣場均勻性示意圖。 圖5E為本創作之承載板下方之氣場均勻性示意圖。 圖6A係本創作一另較佳實施例之電漿輔助化學氣相沉積 20 設備之示意圖。 圖6B係本創作一另較佳實施例之電漿輔助化學氣相沉積 設備之示意圖。 圖7A係本創作一另較佳實施例之電漿輔助化學氣相沉積 設備之上視圖。 17 M365932 圖7B係本創作一另較佳實施例之電漿辅助化學氣相沉積 設備之側視圖。 圖7C係垂直圖7B所示方向之本創作一另較佳實施例之電 漿辅助化學氣相沉積設備之側視圖。 【主要元件符號說明】 10反應腔 31電極 11電極 12進氣裝置 10 13排氣裝置 14射頻（RF)電源供應源 15基板 16承載板 17支撐衍架 15 18馬達 19傳輸裝置 2 PECVD腔體 21加熱板 22玻璃夾治位置 20 23 PECVD裝置 3電漿輔助化學氣相沉 裝置 32進氣裝置 33排氣裝置 34射頻（RF)電源供應源 30 3 5基板 36承載板 37承载板支撐柱 38電極支撐件 3 9高度調整件 35 40馬達 41定位塊 42擋止件 43墊塊 44氣壓缸 40 5電漿辅助化學氣相沉積 設備 51載入單元 52輪出單元 53反應單元 30反應腔 301 腔體 25 302 上蓋 M365932 54傳輸單元 541 機械手臂 55滾輪H) In addition, the number of reaction units W installed in the auxiliary auxiliary chemical vapor deposition apparatus 5 may be increased or decreased as needed, and the plasma-assisted chemical IU-eye deposition apparatus 3 in each reaction unit 53 may also be used. Increase or decrease as needed, thus achieving the goal of increasing production. In this embodiment, each of the plasma-assisted chemical vapor deposition devices 3 is provided with 15 f having a plurality of rollers 55' and the reaction unit is provided with a rail corresponding to the roller so that 'when the maintenance period, each of the reactions is single- The electro-agglomeration-assisted milk-phase deposition device 3 can be easily pulled out for maintenance by the combination of the roller 55 and the obstruction 56. In the present embodiment, the transport unit 54 includes a mechanical arm 541 for use as a transfer substrate. In the embodiment, the reaction chamber 30 includes an upper cover 3〇2 and a cavity 盍302 is 掀-type upper cover, so that the components inside the cavity 3〇1 can be moved by lifting the upper cymbal 2 during maintenance. service. [Example 3] 15 M365932 As shown in FIG. 7A, FIG. 7B, and FIG. 7C, the present embodiment provides a plasma-assisted chemical vapor deposition apparatus, comprising: a loading unit, an output unit 52, and at least one The reaction unit 53 and a transmission unit 54. The loading unit 51 can load a substrate (not shown) into the device 5, and the output unit 52 can be used to output a substrate (not shown). The plasma-assisted chemical vapor deposition apparatus 5 of the present embodiment includes four reaction units 53, but is not limited thereto, and may include one or three or more, which are adjusted as needed. The loading unit 51, the output unit 52, and the reaction unit 53 are disposed on one side of the transmission unit 54, and are respectively connected to the transmission unit 54. The reaction unit 53 may each independently include two or more electric auxiliary vapor deposition apparatuses 3, and the plasma-assisted chemical vapor deposition apparatus 3 is disposed to be stacked one on another. In this embodiment, each of the reaction single cores includes three plasma assisted chemical vapor deposition devices 3. The electropolymerization assisted chemical vapor deposition apparatus 3 is the same as the electro-assisted chemical vapor deposition described in the embodiment i, and therefore the details of the internal components of the apparatus 3 and the reaction unit 5! Fees. The electro-convex auxiliary chemical vapor deposition equipment of the present invention can change the arrangement mode of the equipment from a circular surrounding mode to a matrix form, which greatly contributes to the smooth flow of the equipment production line of the factory. The above-described embodiments are merely examples for convenience of description, and the scope of the claims of the present invention is determined by the scope of the patent application, and is not limited to the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS 16 M365932 FIG. 1A is a schematic view of a conventional plasma assisted chemical vapor deposition (PECVD) apparatus. Figure 1B is a schematic illustration of a conventional plasma assisted chemical vapor deposition (PECVD) multi-chamber bundling apparatus. 5 Figure 2A - Schematic representation of a conventional continuous PECVD single reaction chamber mechanism. Figure 2B is a schematic illustration of a conventional continuous PECVD apparatus. Figure 3A is a schematic illustration of a conventional batch PECVD single reaction chamber mechanism. Fig. 3B is a schematic view of a jig used in a conventional batch type PECVD apparatus. 10 Figure 4A - Schematic representation of a conventional stacked batch PECVD single reaction chamber mechanism. Figure 4B is a schematic illustration of a conventional stacked batch PECVD apparatus. Figure 5A is a schematic view of a chemical vapor deposition apparatus of a preferred embodiment of the present invention. 15 Figure 5B is a schematic illustration of a conventional heated carrier mechanism. FIG. 5C is a schematic diagram of the bearing mechanism of the creation. Figure 5D is a schematic diagram of the uniformity of the gas field below the conventional carrier plate. FIG. 5E is a schematic diagram of gas field uniformity under the carrier plate of the creation. Figure 6A is a schematic illustration of a plasma assisted chemical vapor deposition apparatus 20 of a preferred embodiment of the present invention. Figure 6B is a schematic illustration of a plasma assisted chemical vapor deposition apparatus of a preferred embodiment of the present invention. Figure 7A is a top plan view of a plasma assisted chemical vapor deposition apparatus of another preferred embodiment of the present invention. 17 M365932 Figure 7B is a side elevational view of a plasma assisted chemical vapor deposition apparatus of another preferred embodiment of the present invention. Figure 7C is a side elevational view of a plasma assisted chemical vapor deposition apparatus of a preferred embodiment of the present invention in the direction shown in Figure 7B. [Main component symbol description] 10 reaction chamber 31 electrode 11 electrode 12 air intake device 10 13 exhaust device 14 radio frequency (RF) power supply source 15 substrate 16 carrier plate 17 support truss 15 18 motor 19 transmission device 2 PECVD cavity 21 Heating plate 22 glass clamping position 20 23 PECVD device 3 plasma assisted chemical vapor deposition device 32 air intake device 33 exhaust device 34 radio frequency (RF) power supply source 30 3 5 substrate 36 carrier plate 37 carrier plate support column 38 electrode Support member 39 height adjustment member 35 40 motor 41 positioning block 42 stopper 43 spacer 44 pneumatic cylinder 40 5 plasma assisted chemical vapor deposition apparatus 51 loading unit 52 rotation unit 53 reaction unit 30 reaction chamber 301 cavity 25 302 upper cover M365932 54 transmission unit 541 mechanical arm 55 roller