M320750 八、新型說明： 【新型所屬之技術領域】 本創作係關於發光二極體裝置，尤其是有關於一種利用擴散 劑將多個不同二極體晶片之色光予以混光之複色光發光二極體裝 、 置。 【先前技術】 • 本說明書所稱「發光二極體裝置」係指將發光二極體晶片予 以封装完成後所得之裝置。一種常見的白光發光二極體裝置是採 用單色光（例如藍光）的發光二極體晶片，並在發光二極體晶片 ^塗佈適當的螢光粉或螢光劑（例如黃色的螢光粉）。這種白光發 光〜極體裝置的作用原理是，發光二極體晶片所發出的色光（例 ，藍光）會激發螢光粉而產生互補的色光（例如黃光），這二種色 光口為互補而產生二波長的白光。這種白光發光二極體裝置還有 ►種改良的技術’是在發光二極體晶片上或是封裝結構的保護鏡 軍内壁進-步塗佈擴_或散射媒介 (diffusing agent)，以改善 光的均勻性。以上所述這些先前技術最主要的缺點之一 &因為參與混光的發光二極體晶#的色光與螢光粉所產生的互 補光的比例很難控制’利用這種方式產生的白光通常會有色溫偏 ^凟色性偏低等混光不良的問題。此外，發光二極體晶片本身 斤產生的熱’也會造成與晶片直接接觸的螢光粉劣化的問題，進 ‘致整個發光二極體装置的性能，包含色度和亮度，以及發光 M320750 二極體裝置的壽命都會跟著降低。 【新型内容】 因此，本創作之主要目的係在提供一種複色光發光二極體裝 置，其以至少二種互補色光的至少二顆發光二極體晶片為光源， 再以設置於光線射出路徑的擴散劑來提升複色光的混光效果，以 改善習知技術的缺點。 本創作的一個實施例是以三顆分別發出紅、綠、藍三色光的 發光二極體晶片為光源，由該三色光混光而產生全色光。本創作 由於沒有採用螢光粉，所以不會有混光比例控制不易、以及螢光 粉劣化的相關問題。本創作然後再於封裝結構内填充擴散劑以增 進其混光效果。其中，擴散劑是由Al2〇3、或Si3N4、或S〇2等材 料的顆粒、或是這些顆粒的適當組合，與矽膠或環氧樹脂混和而 構成。 關於本創作之優點與精神可以藉由以下的新型詳述及所附圖 式得到進一步的瞭解。 .【實施方式】 本創作所提出的複色光發光二極體裝置，是以包含至少二種 互補色光的至少二顆發光二極體晶片為光源。本創作之精神不受. 限於發光二極體所採用的技術、以及封裝這些發光二極體的方 式。第1、2圖所示即為利用中華民國發明專利申請號94140253 號、同為本創作申請人所提出之封裝結構之本創作之第一與第二 M320750 實施例。如圖所示，基本上所有發光二極體裝置的封裝結構均至 少包含底座100、一或多個發光二極體晶片15〇、複數個電極1〇4、 以及透光性填充物130。在第一實施例裡是以三顆分別發出紅、 綠、藍三色光的發光二極體晶片150為光源，利用彼此互補的紅、 綠、藍三色光混光而產生全色光。在第二實施例裡是以二顆分別 發出黃、藍二色光的發光二極體晶片i 5 〇為光源，利用互補的黃、 藍二色光混光而產生白光。其實本創作的發光二極體晶片的 色光與數目的選擇，是在生產、製造前，根據所擬採用的發光二 極體晶片的光學特性（波長 '亮度等）以及所欲達成的複色光的 光學特性，所決定出來的。·例如，如果所用的藍光發光二極體晶 片150亮度較弱，本創作的另一實施例是以二顆藍光、以及紅、 綠光各一顆、總共四顆發光二極體晶片15〇為光源。 電極104是發光二極體裝置和外部電路構成電氣連接的媒 介。通常電極104和底座1〇〇是一體成型構成的。底座1〇〇的一 體成型結構中通常還包含有散熱座1〇2、以及隔離電極1〇4與散 熱座102的絕緣物106。散熱座1〇2與電極1〇4都是由高導電性 與高導熱性的金屬材料所構成。絕緣物1〇6則是由樹脂或類似的 絕緣材料所構成。發光二極體晶片150係設置於散熱座1〇2上， 其正負電極（未圖示）通常是以某種電氣連結機制分別和不同的 電極104連接。在圖示的二個實施例裡，電氣連結機制都是導線 (bonding wire 或 gold wire) 120。也因此，電極 104 與導線 120 的數目一般是晶片數的二倍。 M320750 為了使發光二極體晶片150所發出的光線集中朝上與朝外， 一般的封裝結構還會包含一個反射板H〇。在圖示的二個實施例 裡’反射板110是以適當的接著劑16〇 (請見第3、4、5圖）與 底座100黏連’其内部具有一適當口徑且上下貫通的穿孔，以將 ‘ 發光二極體晶片150暴露出來並包圍其週緣。反射板110是以高 反射率的金屬材質（例如鋁）構成，或是由樹脂或類似的絕緣材 質構成但於穿孔壁面施以白塗裝、或塗佈有高反射率的薄膜（例 . 如鍍銀）。因此發光二極體晶片15〇所發出的光線得經由反射板 110的穿孔内壁的反射而向上、向外射出。 透光性填充物130 —般是由矽膠或環氧樹脂或類似的透明材 料所構成的，其目的在封固與保護發先二極體晶片15〇、導線12〇 等元件。在圖示的二個實施例裡，透光性填充物13〇是完全填充 於反射板110的穿孔。為了進一步提升發光二極體晶片15〇的混 光效果，本創作在透光性填充物130中均勻的掺雜了由A12〇3、 _ 或ShN4、或S〇2等材料的顆粒170、或是這些顆粒17〇的適當組 _ 合（本說明書稱混合顆粒170的透光性填充物130為「擴散劑」）。 這些顆粒170對於發光二極體晶片15〇所發出·的光線有散射 (scattering)或擴散（diffusing)的效果，因此可以進一步增加 混光的均勻度。顆粒170的直徑一般最好是在1〇nm至1〇〇〇nm之 間，而其在透光性填充物130中的混合濃度最好是在1〇4ppm至 2xl05ppm 之間。 除了將擴散劑（摻雜有散射顆粒170的透光性填充物130) M320750 完全填充於反射板110的穿孔内以外，第3、4、5圖所示的本創 作第三、四、五實施例提供了其他的設置擴散劑方式。如第3圖 所示，擴散劑僅將導線120與發光二極體晶片15〇完全包覆起來。 如第4圖所示，擴散劑僅將導線12〇與發光二極體晶片15〇完全 包覆起來，其他空間則完全用沒有摻雜顆粒17〇的透光性填充物 填充。如第5圖所示，沒有摻雜顆粒17〇的透光性填充物13〇 疋完全填充於反射板110的穿孔，但是沒有摻雜顆粒170的透光 f生填充物130的上表面塗佈了一層擴散劑。以上這些實施例的精 神都在於將擴散劑設置於直接或間接（經由反射板110)由發光 二極體晶片150所發出光線的射出路徑上，以提高複色光混光的 均勻度。 同樣的精神可以運用在其他的封裝結構上，以傳統的具有鐘 型鏡罩的封裝結構為例，擴散劑可以有下列幾種設置方式 僅完全包覆發光二極體晶片與導線；（2)完全填充於鐘型鏡罩内； ⑺僅塗佈於鐘型鏡罩内壁；或是(4)僅塗佈於鐘型鏡罩外壁。 藉由以上較佳具體實施例之詳述，料望缺加清楚描述本 創作之特徵與精神，而並非以上述所揭露的較佳具體實施例來對 本創作之糾加以限H目反地，其目的是希望料蓋各種改變 及具相等_安排於本創作所欲申請之專利範相。 【圖式簡單說明】 第1圖係依據本創作一第一實施例之透視示意圖。 M320750 第2圖係依據本創作一第二實施例之透視示意圖。 第3圖係依據本創作一第三實施例之剖視示意圖。 第4圖係依據本創作一第四實施例之剖視示意圖。 第5圖係依據本創作一第五實施例之剖視示意圖。 【主要元件符號說明】M320750 VIII. New Description: [New Technology Field] This creation is about a light-emitting diode device, especially a complex-color light-emitting diode that uses a diffusing agent to mix the color lights of a plurality of different diode chips. Body, set. [Prior Art] • The term “light-emitting diode device” as used in this specification refers to a device obtained by encapsulating a light-emitting diode wafer. A common white light emitting diode device is a light emitting diode chip using monochromatic light (for example, blue light), and coating a suitable phosphor powder or a fluorescent agent (for example, yellow fluorescent light) on the light emitting diode chip. powder). The function of the white light-emitting device is that the color light emitted by the light-emitting diode chip (for example, blue light) excites the phosphor powder to generate complementary color light (for example, yellow light), which are complementary to each other. It produces two wavelengths of white light. The white light-emitting diode device also has a modified technology that is improved on the light-emitting diode wafer or the protective mirror inner wall of the package structure to improve the diffusing agent or the diffusing agent. Uniformity of light. One of the most important shortcomings of the prior art described above is that it is difficult to control the ratio of the complementary light generated by the color light of the light-emitting diode crystals participating in the light mixing to the fluorescent powder. There is a problem of poor color mixing such as low color temperature and low ochre. In addition, the heat generated by the LED chip itself will also cause the problem of deterioration of the phosphor powder in direct contact with the wafer, and the performance of the entire LED device, including chromaticity and brightness, and the illumination M320750 II The life of the polar device will be reduced. [New content] Therefore, the main purpose of the present invention is to provide a complex color light-emitting diode device using at least two light-emitting diode chips of at least two complementary color lights as a light source, and then disposed in a light emission path. A diffusing agent to enhance the light mixing effect of the complex color light to improve the shortcomings of the prior art. One embodiment of the present invention uses three light-emitting diode chips that respectively emit red, green, and blue light as light sources, and the three-color light is mixed to generate full-color light. This creation does not involve the use of phosphor powder, so there is no problem that the blending ratio control is not easy and the phosphor powder is degraded. The creation is then filled with a diffusing agent in the package structure to enhance its light mixing effect. Here, the diffusing agent is composed of particles of a material such as Al2?3, Si3N4, or S?2, or a suitable combination of these particles, and is mixed with silicone or epoxy resin. The advantages and spirit of this creation can be further understood by the following new detailed description and the accompanying drawings. [Embodiment] The multi-color light-emitting diode device proposed by the present invention uses at least two light-emitting diode chips including at least two complementary color lights as a light source. The spirit of this creation is not limited to the technology used in light-emitting diodes and the way in which these light-emitting diodes are packaged. Figures 1 and 2 show the first and second M320750 embodiments of the present invention utilizing the package structure of the applicant's patent application No. 94140253. As shown, substantially all of the package structures of the light emitting diode device comprise at least a base 100, one or more light emitting diode chips 15A, a plurality of electrodes 1〇4, and a light transmissive filler 130. In the first embodiment, three light-emitting diode chips 150 respectively emitting red, green, and blue light are used as light sources, and full-color light is generated by mixing light of red, green, and blue colors complementary to each other. In the second embodiment, two light-emitting diode chips i 5 分别 which emit yellow and blue light respectively are used as light sources, and white light is generated by mixing light of complementary yellow and blue light. In fact, the color light and the number of the light-emitting diode chips of the present invention are selected according to the optical characteristics (wavelength 'brightness, etc.) of the light-emitting diode chip to be used before the production and manufacture, and the desired complex color light. The optical properties are determined. For example, if the blue light-emitting diode chip 150 used is weak in brightness, another embodiment of the present invention is to use two blue light, one red and one green light, and a total of four light-emitting diode chips. light source. The electrode 104 is a medium in which the light emitting diode device and the external circuit constitute an electrical connection. Usually, the electrode 104 and the base 1 are integrally formed. The integrally formed structure of the base 1 通常 also includes a heat sink 1 〇 2, and an insulator 106 separating the electrode 1 〇 4 and the heat sink 102. Both the heat sink 1〇2 and the electrode 1〇4 are made of a metal material having high conductivity and high thermal conductivity. The insulator 1〇6 is composed of a resin or a similar insulating material. The light-emitting diode chip 150 is disposed on the heat sink 1 2, and its positive and negative electrodes (not shown) are usually connected to different electrodes 104 by some electrical connection mechanism. In the two illustrated embodiments, the electrical connection mechanism is a bonding wire or gold wire 120. Therefore, the number of electrodes 104 and wires 120 is generally twice the number of wafers. M320750 In order to concentrate the light emitted by the LED chip 150 upward and outward, the general package structure also includes a reflector H〇. In the two illustrated embodiments, the 'reflector 110 is adhered to the base 100 by a suitable adhesive 16 (see Figures 3, 4, 5). The interior has a suitable diameter and a perforation through the top and bottom. The 'light emitting diode wafer 150 is exposed and surrounds its periphery. The reflecting plate 110 is made of a high-reflectivity metal material (for example, aluminum), or is made of a resin or a similar insulating material, but is coated with a white coating on a perforated wall surface or coated with a high reflectance film. silver). Therefore, the light emitted from the light-emitting diode wafer 15 is emitted upward and outward through the reflection of the inner wall of the perforation of the reflecting plate 110. The light-transmissive filler 130 is generally composed of silicone or epoxy resin or a similar transparent material, and is intended to encapsulate and protect components such as the first diode wafer 15 and the wire 12 turns. In the two illustrated embodiments, the light transmissive filler 13 is a perforation that is completely filled in the reflector 110. In order to further enhance the light mixing effect of the light-emitting diode chip 15 ,, the present invention uniformly dope the particles 170 of a material such as A12〇3, _ or ShN4, or S〇2, or the like in the light-transmissive filler 130, or It is an appropriate group of these particles 17 (the light-transmissive filler 130 of the mixed particles 170 is referred to as a "diffusion agent" in the present specification). These particles 170 have the effect of scattering or diffusing the light emitted from the light-emitting diode wafer 15 ,, so that the uniformity of the light mixing can be further increased. The diameter of the particles 170 is generally preferably between 1 〇 nm and 1 〇〇〇 nm, and the mixed concentration in the light-transmitting filler 130 is preferably between 1 〇 4 ppm and 2 x 105 ppm. In addition to completely filling the diffuser (translucent filler 130 doped with scattering particles 170) M320750 into the perforations of the reflector 110, the third, fourth, and fifth implementations of the creation shown in Figures 3, 4, and 5 Other examples of providing a diffusing agent are provided. As shown in Fig. 3, the diffusing agent completely encloses the wire 120 and the light-emitting diode chip 15A. As shown in Fig. 4, the diffusing agent completely covers only the wire 12 turns and the light-emitting diode chip 15 turns, and the other spaces are completely filled with the light-transmissive filler without the doping particles 17 turns. As shown in FIG. 5, the light-transmissive filler 13 without the doping particles 17A is completely filled in the perforations of the reflecting plate 110, but the upper surface of the light-transmitting f-filled filler 130 without the doping particles 170 is coated. A layer of diffusing agent. The spirit of the above embodiments lies in the fact that the diffusing agent is disposed on the exit path of the light emitted from the light-emitting diode wafer 150 directly or indirectly (via the reflecting plate 110) to improve the uniformity of the mixed light mixing. The same spirit can be applied to other package structures. For example, in the conventional package structure with a bell-shaped mirror cover, the diffusing agent can be completely covered with the light-emitting diode wafer and the wire in the following manners; (2) Completely filled in the bell-shaped mirror cover; (7) applied only to the inner wall of the bell-shaped mirror cover; or (4) applied only to the outer wall of the bell-shaped mirror cover. The features and spirit of the present invention are clearly described by the above detailed description of the preferred embodiments, and the present invention is not limited to the specific embodiments disclosed above. The purpose is to cover all kinds of changes and equals the patents that are intended to be applied for in this creative office. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic perspective view of a first embodiment according to the present invention. M320750 Figure 2 is a schematic perspective view of a second embodiment according to the present invention. Figure 3 is a schematic cross-sectional view showing a third embodiment of the present invention. Figure 4 is a cross-sectional view showing a fourth embodiment of the present invention. Figure 5 is a cross-sectional view showing a fifth embodiment of the present invention. [Main component symbol description]
100 底座 102 散熱座 104 電極 106 絕緣物 110 反射板 120 導線 130 透光性填充物 150 二極體晶片 160 接著劑- 170 擴散劑顆粒100 Base 102 Heatsink 104 Electrode 106 Insulator 110 Reflector 120 Conductor 130 Translucent Filler 150 Diode Wafer 160 Adhesive - 170 Diffusion Particles