TWI890448B - High pressure substrate processing apparatus - Google Patents
High pressure substrate processing apparatusInfo
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- TWI890448B TWI890448B TW113118763A TW113118763A TWI890448B TW I890448 B TWI890448 B TW I890448B TW 113118763 A TW113118763 A TW 113118763A TW 113118763 A TW113118763 A TW 113118763A TW I890448 B TWI890448 B TW I890448B
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- pressure
- housing
- processing apparatus
- substrate processing
- door
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- H10P72/00—
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
本發明涉及一種用於在高壓環境中處理基板的處理裝置。 The present invention relates to a processing device for processing a substrate in a high-pressure environment.
通常,在半導體元件的製造工藝中,對半導體基板進行各種處理。所述處理有氧化、氮化、矽化、離子注入及沉積工藝等。還有一種用於改善半導體元件的介面性能的氫或氘熱處理工藝。 Typically, semiconductor substrates undergo various treatments during the semiconductor device manufacturing process. These treatments include oxidation, nitridation, silicidation, ion implantation, and deposition processes. Hydrogen or deuterium thermal treatments are also used to improve the interface properties of semiconductor devices.
用於處理基板的氣體在高壓下供應到腔室中,並作用在半導體基板上。為了將腔室內保持高壓,必須由門牢固地關閉腔室的殼體。 Gases used to process substrates are supplied into the chamber at high pressure and act upon the semiconductor substrates. To maintain the high pressure within the chamber, the chamber housing must be securely closed by a door.
在腔室關閉狀態下被高壓氣體變松時,殼體和門之間可能會產生縫隙。這些縫隙會成為腔室內的氣體流出到外部的通道。 When a chamber is closed and loosened by high-pressure gas, gaps may form between the housing and the door. These gaps can serve as pathways for the gas inside the chamber to escape to the outside.
上述背景技術是發明人為了推導本發明的實施例而擁有的技術或者在推導過程中獲得的技術資訊,因此,不一定為在本申請之前已向公眾公開的公知技術。 The above-mentioned background technology refers to the technology possessed by the inventor in order to derive the embodiments of the present invention or the technical information obtained in the derivation process. Therefore, it is not necessarily the public known technology disclosed to the public before the filing of this application.
本發明的一目的在於,提供一種即使在腔室內處於高壓的情況下,也能夠牢固地保持殼體及閘之間的關閉狀態的高壓基板處理裝置。 One object of the present invention is to provide a high-pressure substrate processing apparatus that can firmly maintain the closed state between the housing and the gate even when the chamber is under high pressure.
本發明的另一目的在於,提供一種能夠最小化用於耦合殼體和門之間的必要動力的高壓基板處理裝置。 Another object of the present invention is to provide a high-pressure substrate processing apparatus that can minimize the power required for coupling between a housing and a door.
為了達成所述目的,根據本發明的一側面的高壓基板處理裝置,其中,可以包括:內腔,形成為用於容納待處理基板、和以高於大氣壓的第一壓 力供給的反應氣體;外腔,具備:外殼,用於容納所述內腔;以及外門,可在關閉所述外殼的關閉狀態和打開所述外殼的打開狀態之間移動,所述外腔形成為用於容納以相對於所述第一壓力設定的第二壓力供給的保護氣體;以及緊固模組,具備:支撐突起,設置在所述外殼;旋轉構件,可旋轉地設置在所述外門;以及卡止突起,在所述旋轉構件上突出形成,在所述關閉狀態下隨著所述旋轉構件旋轉而配置在所述支撐突起上。 To achieve the aforementioned objectives, a high-pressure substrate processing apparatus according to one aspect of the present invention may include: an inner chamber configured to contain a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer chamber comprising: an outer housing configured to contain the inner chamber; and an outer door movable between a closed state for closing the outer housing and an open state for opening the outer housing, the outer chamber configured to contain a protective gas supplied at a second pressure set relative to the first pressure; and a fastening module comprising: a supporting protrusion disposed on the outer housing; a rotating member rotatably disposed on the outer door; and a locking protrusion protruding from the rotating member and disposed on the supporting protrusion as the rotating member rotates in the closed state.
此處,所述旋轉構件可以位於由所述外殼限定的區域內。 Here, the rotating member may be located within an area defined by the outer shell.
此處,所述旋轉構件可以包括具有環形狀的旋轉環。 Here, the rotating member may include a rotating ring having a ring shape.
根據本發明的另一側面的高壓基板處理裝置,可以包括:內腔,形成為用於容納待處理基板、和以高於大氣壓的第一壓力供給的反應氣體;外腔,具備:外殼,用於容納所述內腔;以及外門,可在關閉所述外殼的關閉狀態和打開所述外殼的打開狀態之間移動,所述外腔形成為用於容納以相對於所述第一壓力設定的第二壓力供給的保護氣體;以及緊固模組,具備:支撐突起,設置在所述外殼;以及卡止突起,在所述關閉狀態下隨著移動以連接於所述外門的狀態配置於所述支撐突起上,所述外門包括在所述關閉狀態下與所述外殼接觸的上板,所述卡止突起配置在所述上板的下側。 According to another aspect of the present invention, a high-pressure substrate processing apparatus may include: an inner chamber formed to accommodate a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an outer chamber having: an outer shell for accommodating the inner chamber; and an outer door movable between a closed state for closing the outer shell and an open state for opening the outer shell, wherein the outer chamber is formed to accommodate the substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure. A shielding gas is supplied at a second pressure set at the first pressure; and a fastening module comprising: a supporting protrusion disposed on the outer housing; and a locking protrusion disposed on the supporting protrusion so as to move and connect to the outer door in the closed state. The outer door includes an upper plate that contacts the outer housing in the closed state, and the locking protrusion is disposed on a lower side of the upper plate.
此處,所述外門還可以包括配置在與所述上板不同水準的下板,所述卡止突起可以配置在所述上板和所述下板之間。 Here, the outer door may further include a lower plate disposed at a different level from the upper plate, and the locking protrusion may be disposed between the upper plate and the lower plate.
此處,所述卡止突起可以包括下述上部和下部中的一個,其中,上部配置為對應於所述上板的側面;及下部配置為對應於所述下板的側面。 Here, the locking protrusion may include one of an upper portion and a lower portion, wherein the upper portion is configured to correspond to the side surface of the upper plate; and the lower portion is configured to correspond to the side surface of the lower plate.
此處,所述外門還可以包括在所述關閉狀態下與所述外殼接觸的密封材料,所述卡止突起可以被形成為與所述密封材料和所述外殼之間的接觸獨立地旋轉。 Here, the outer door may further include a sealing material that contacts the outer housing in the closed state, and the locking protrusion may be formed to rotate independently of the contact between the sealing material and the outer housing.
此處,所述緊固模組還可以包括驅動單元,所述驅動單元形成為旋轉並驅動所述卡止突起。 Here, the fastening module may further include a driving unit configured to rotate and drive the locking protrusion.
此處,所述緊固模組還可以包括形成有所述卡止突起的旋轉構件,所述驅動單元可以形成為使所述旋轉構件以沿著所述外門的開閉方向配置的旋轉軸為中心旋轉。 Here, the fastening module may further include a rotating member having the locking protrusion formed thereon, and the driving unit may be configured to rotate the rotating member about a rotation axis arranged along the opening and closing direction of the outer door.
此處,所述驅動單元,可以包括:從動齒輪,形成在所述旋轉構件上;驅動齒輪,與所述從動齒輪相嚙合;以及馬達,用於使所述驅動齒輪旋轉。 Here, the driving unit may include: a driven gear formed on the rotating member; a driving gear engaged with the driven gear; and a motor for rotating the driving gear.
根據本發明的另一側面的高壓基板處理裝置,可以是,包括:腔室,具備:殼體,形成為用於容納待處理基板、和以高於大氣壓的壓力供給的工藝氣體;以及門,形成為在關閉所述殼體的關閉狀態和打開所述殼體的打開狀態之間移動;以及緊固模組,具備:支撐突起,設置在所述殼體上;以及卡止突起,在所述關閉狀態下,隨著移動以連接於所述門的狀態下配置在所述支撐突起上,所述門包括在所述關閉狀態下與所述殼體接觸的上板,所述卡止突起配置在所述上板的下側。 According to another aspect of the present invention, a high-pressure substrate processing apparatus may include: a chamber having a housing configured to accommodate a substrate to be processed and a process gas supplied at a pressure higher than atmospheric pressure; a door configured to move between a closed state for closing the housing and an open state for opening the housing; and a fastening module having a supporting protrusion provided on the housing; and a locking protrusion disposed on the supporting protrusion so as to move to connect to the door in the closed state. The door includes an upper plate that contacts the housing in the closed state, and the locking protrusion is disposed on a lower side of the upper plate.
此處,所述門還可以包括配置在與所述上板不同水準的下板,所述卡止突起配置在所述上板和所述下板之間。 Here, the door may further include a lower plate disposed at a different level from the upper plate, with the locking protrusion disposed between the upper plate and the lower plate.
此處,所述緊固模組還可以包括可旋轉地設置在所述門上,並突出形成有所述卡止突起的旋轉構件,所述卡止突起可隨著所述旋轉構件的旋轉而由所述支撐突起支撐。 Here, the fastening module may further include a rotating member rotatably disposed on the door and having the locking protrusion protruding therefrom, wherein the locking protrusion may be supported by the supporting protrusion as the rotating member rotates.
此處,所述門還可以包括設置在所述上板上的密封材料,所述卡止突起可以被形成為在所述關閉狀態下與所述殼體與所述密封材料之間的接觸獨立地移動。 Here, the door may further include a sealing material provided on the upper plate, and the locking protrusion may be formed to move independently of the contact between the housing and the sealing material in the closed state.
此處,所述工藝氣體可以包含含有活性氣體的反應氣體和為惰性氣體的保護氣體,所述殼體,可以包括:內殼,形成為用於容納所述待處理基板和所述反應氣體;以及外殼,用於容納所述內殼,並與所述內殼相聯接,使得與所述內殼形成用於容納所述保護氣體的封閉空間,所述門可以被形成為封閉所述內殼。 Here, the process gas may include a reactive gas containing an active gas and a protective gas that is an inert gas. The housing may include: an inner housing configured to contain the substrate to be processed and the reactive gas; and an outer housing configured to contain the inner housing and connected to the inner housing to form an enclosed space for containing the protective gas. The door may be configured to seal the inner housing.
發明效果 Invention Effect
根據如上所述構成的本發明的高壓基板處理裝置,用於容納基板和高壓氣體的殼體和門通過緊固模組保持緊固狀態,緊固模組被構成為相對於設置在殼體上的支撐突起,卡止突起針對外門進行移動配置在支撐突起上,從而,通過卡止突起和支撐突起之間的緊固,即使在腔室內高壓力下也能牢固地保持殼體和門之間的關閉狀態。 According to the high-pressure substrate processing apparatus of the present invention constructed as described above, the housing and door for accommodating substrates and high-pressure gas are held in a secure state by a securing module. The securing module is configured such that a locking projection is positioned relative to a supporting projection provided on the housing, and is disposed on the supporting projection so as to move relative to the outer door. The securement between the locking projection and the supporting projection ensures that the housing and door remain securely closed even under high pressure within the chamber.
另外,由於卡止突起及閘獨立地移動,因此,為了殼體和門之間的耦合僅需要移動除門之外的卡止突起即可。由此可以最小化殼體和門之間的耦合所需的動力。 Furthermore, since the latching protrusion and the gate move independently, only the latching protrusion needs to be moved to couple the housing and door. This minimizes the power required to couple the housing and door.
100、100’、100”、200:高壓基板處理裝置 100, 100’, 100”, 200: High-pressure substrate processing equipment
110:內腔 110: Inner cavity
113:晶圓舟 113:Wafer boat
115:內門 115: Inner Gate
119:支撐構件 119: Supporting member
120、220:外腔 120, 220: External cavity
121、121’、121”、221:外殼 121, 121’, 121”, 221: Outer shell
125、125’、125’、125”:外門 125, 125’, 125’, 125”: Exterior door
126、126’、126”、226:上板 126, 126’, 126”, 226: upper plate
127、127’、127”、227:下板 127, 127’, 127”, 227: Lower plate
128、128’、128”、228:間隔件 128, 128’, 128”, 228: Spacers
129、229:密封材料 129, 229: Sealing materials
130:供氣模組 130: Air supply module
131:氣體供給器 131: Gas Supply
133:反應氣體管線 133: Reaction gas pipeline
135:保護氣體管線 135: Protect gas pipelines
140:排氣模組 140: Exhaust Module
141、145:排氣管 141, 145: Exhaust pipe
150、150’、150”、250:緊固模組 150, 150’, 150”, 250: Fastening modules
151、251:支撐突起 151, 251: Support protrusions
155、155’、155”、255:卡止突起 155, 155’, 155”, 255: Locking protrusions
155a:上部 155a: upper part
155b:下部 155b:lower part
157、157’、157”、257:旋轉構件(或旋轉環) 157, 157’, 157”, 257: Rotating member (or rotating ring)
159、259:軸承 159, 259: Bearings
161:驅動單元 161: Drive unit
163:從動齒輪 163: Driven gear
164:驅動齒輪 164: Drive gear
165:馬達 165: Motor
211:內殼 211: Inner shell
225:門 225: Door
CS:封閉空間 CS: Closed Space
E:開閉方向 E:Opening and closing direction
R:旋轉方向 R: Rotation direction
W:基板 W: substrate
圖1是根據本發明的一實施例的高壓基板處理裝置100的概念圖。 FIG1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to one embodiment of the present invention.
圖2是示出圖1的高壓基板處理裝置100處於打開狀態的分解立體圖。 FIG2 is an exploded perspective view showing the high-pressure substrate processing apparatus 100 of FIG1 in an open state.
圖3是示出圖2的高壓基板處理裝置100處於關閉狀態的截面圖。 FIG3 is a cross-sectional view showing the high-pressure substrate processing apparatus 100 of FIG2 in a closed state.
圖4是用於說明驅動圖3的旋轉環157的結構的剖視立體圖。 FIG4 is a cross-sectional perspective view used to illustrate the structure of the rotating ring 157 of FIG3 .
圖5是示出根據圖3的高壓基板處理裝置100的一變形例的高壓基板處理裝置100’的主要部分的截面圖。 FIG5 is a cross-sectional view showing the main parts of a high-pressure substrate processing apparatus 100′ according to a modified example of the high-pressure substrate processing apparatus 100 of FIG3.
圖6是示出根據圖3的高壓基板處理裝置100的另一變形例的高壓基板處理裝置100”的主要部分的截面圖。 FIG6 is a cross-sectional view of the main parts of a high-pressure substrate processing apparatus 100 ″ showing another modified example of the high-pressure substrate processing apparatus 100 of FIG3 .
圖7是示出根據本發明的另一實施例的高壓基板處理裝置200處於關閉狀態的截面圖。 FIG7 is a cross-sectional view showing a high-pressure substrate processing apparatus 200 according to another embodiment of the present invention in a closed state.
以下,參考附圖詳細說明本發明的優選實施例。 Below, the preferred embodiments of the present invention are described in detail with reference to the accompanying drawings.
本發明不限於以下公開的實施例,可以施加各種變更,可以實現為彼此不同的形態。本實施例僅是用於使本發明的公開變完整且向具有通常知識的人全面解釋發明的範疇而提供的。因此,應理解本發明不限於以下公開的實施例,不僅包括彼此取代或者附加與任一個實施例的結構不同的實施例的結構,而且包括本發明的技術構思和範圍中包含的所有變更、均等物乃至替代物。 The present invention is not limited to the embodiments disclosed below; various modifications may be made and it may be implemented in various different forms. These embodiments are provided solely to complete the disclosure of the present invention and fully explain the scope of the invention to those of ordinary skill. Therefore, it should be understood that the present invention is not limited to the embodiments disclosed below, but includes not only substitutions for or additions to embodiments that differ from any one embodiment, but also all modifications, equivalents, and even substitutes within the technical concept and scope of the present invention.
應理解附圖僅是用於容易理解本說明書中公開的實施例,並不通過附圖限制本說明書中公開的技術構思,而應包括本發明的構思以及技術範圍中包括的所有變更、均等物乃至替代物。圖中的構成要素是考慮方便理解等而可 以將大小或者厚度過分放大或者縮小示出,然而不由此限制解釋本發明的保護範圍。 It should be understood that the accompanying figures are intended only to facilitate understanding of the embodiments disclosed in this specification and are not intended to limit the technical concepts disclosed in this specification. Instead, the drawings are intended to encompass the concepts and all modifications, equivalents, and even substitutes within the technical scope of the present invention. Components in the figures may be exaggerated or reduced in size or thickness for ease of understanding, but this does not limit the scope of protection of the present invention.
在本說明書中使用的術語僅是為了說明特定的實現例或者實施例而使用的,不旨在限定本發明。然後,在文脈上沒有明確其他含義時,單數的表述包括複數的表述。在說明書中“包括~”、“~構成”等術語意在於指定說明書上記載的特徵、數位、步驟、動作、構成要素、構件或者其組合的存在。即,在說明書中“包括~”、“~構成”等的術語應理解為不事先排除一個或者其以上的其他特徵或者數位、步驟、動作、構成要素、構件或者其組合的存在或者附加可能性。 The terms used in this specification are intended solely to describe specific implementations or embodiments and are not intended to limit the present invention. However, unless the context clearly indicates otherwise, the singular includes the plural. Terms such as "including" and "consisting of" in this specification are intended to specify the presence of the features, numbers, steps, actions, constituent elements, components, or combinations thereof described in the specification. In other words, the use of terms such as "including" and "consisting of" in this specification should be understood as not excluding the presence or possibility of additional one or more other features, numbers, steps, actions, constituent elements, components, or combinations thereof.
第一、第二等包括序數的術語可以在說明各種構成要素中使用,然而所述構成要素不限於所述術語。所述術語僅作為將一個構成要素從其他構成要素中進行區分的目的來使用。 Terms including ordinal numbers such as "first" and "second" can be used to describe various components, but the components are not limited to these terms. These terms are used only to distinguish one component from other components.
當提及到某一構成要素與其他構成要素“連接”或者“接通”時,也可以是與該其他構成要素直接連接或者接通,然而應理解為也可以是在中間存在其他構成要素。與此相反地,當提及到某一構成要素與其他構成要素“直接連接”或者“直接接通”時,應理解在中間不存在其他構成要素。 When a component is referred to as being "connected" or "in communication" with another component, it may be directly connected or in communication with the other component, but it should be understood that other components may exist in between. Conversely, when a component is referred to as being "directly connected" or "directly in communication" with another component, it should be understood that no other components exist in between.
當提及到某一構成要素“在”其他構成要素的“上部”或者“下部”時,應理解不僅是配置在該其他構成要素的直接上方,而且在中間還可以存在其他構成要素。 When a component is mentioned as being "above" or "below" another component, it should be understood that it is not only disposed directly above the other component, but also that other components may be present in between.
未有其他定義時,包括技術或者科學術語在內在此使用的所有術語具有在本發明所屬技術領域中具有通常的知識的人一般所理解的相同的含義。一般使用的辭典上所定義的相同的術語應解釋為具有與相關技術的文脈上所具有的含義相一致的含義,在本申請中沒有明確定義時,不應解釋為理想或者過分形式上的含義。 Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meanings as generally understood by persons having ordinary knowledge in the art to which this invention belongs. Terms defined in commonly used dictionaries should be interpreted as having meanings consistent with the context of the relevant art and should not be construed as having ideal or overly formal meanings unless expressly defined in this application.
圖1為根據本發明的一實施例的高壓基板處理裝置100的概念圖。 FIG1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to one embodiment of the present invention.
參照圖1,高壓基板處理裝置100,可以包括:內腔110、外腔120、供氣模組130及排氣模組140。 Referring to FIG. 1 , a high-pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an air supply module 130 , and an air exhaust module 140 .
內腔110形成容納待處理物件的處理空間。內腔110可以由非金屬材料而製成,例如石英,使得減少在高溫和高壓工作環境中被污染。通過操作設 置在內腔110的外部的加熱器(省略圖示),內腔110的溫度可以達到數百至數千攝氏度。所述物件可以為安裝在保持器上的半導體基板W(參照圖2)。所述保持器可以為能夠將待處理基板W堆疊成多層的晶圓舟(wafer boat)113(參照圖2)。 The inner chamber 110 forms a processing space for accommodating objects to be processed. The inner chamber 110 can be made of a non-metallic material, such as quartz, to reduce contamination in the high-temperature and high-pressure operating environment. A heater (not shown) located outside the inner chamber 110 can be operated to raise the temperature of the inner chamber 110 to several hundred to several thousand degrees Celsius. The objects can be semiconductor substrates W mounted on a holder (see Figure 2). The holder can be a wafer boat 113 (see Figure 2) capable of stacking the substrates W to be processed in multiple layers.
外腔120形成用於容納內腔110的內部空間。外腔120配置在內腔110的外側。外腔120與內腔110不同可以由金屬材料而製成,因為外腔不會對所述物件造成污染。 The outer cavity 120 forms an internal space for accommodating the inner cavity 110. The outer cavity 120 is disposed outside the inner cavity 110. Unlike the inner cavity 110, the outer cavity 120 can be made of a metal material because it does not contaminate the objects.
供氣模組130是向內腔110和外腔120供給氣體的結構。供氣模組130具有作為氣體源的氣體供給器131。氣體供給器131可以向內腔110選擇性地提供如用於熱處理工藝的反應氣體,例如氫氣(H2)、氘氣(D2)、氟氣(F2)、氨氣(NH3)、氯氣(Cl2)、氮氣(N2)等。氣體供給器131可以向外腔120提供保護氣體,例如作為惰性氣體的氮氣或氬氣(Ar)。所述反應氣體及所述保護氣體可以簡單地稱為工藝氣體。所述工藝氣體和所述保護氣體分別通過反應氣體管線133或保護氣體管線135供給到內腔110或外腔120。供給到外腔120的保護氣體具體供給到外腔120和內腔110之間的空間(保護空間)。 The gas supply module 130 is a structure for supplying gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 includes a gas supply 131 as a gas source. The gas supply 131 can selectively supply reactant gases used in heat treatment processes, such as hydrogen ( H2 ), deuterium ( D2 ), fluorine ( F2 ), ammonia ( NH3 ), chlorine ( Cl2 ), and nitrogen ( N2 ), to the inner chamber 110. The gas supply 131 can also supply a shielding gas, such as nitrogen or argon (Ar), which serves as an inert gas, to the outer chamber 120. These reactant and shielding gases can be simply referred to as process gases. The process gas and the shielding gas are supplied to the inner chamber 110 or the outer chamber 120 respectively through the reaction gas line 133 or the shielding gas line 135. The shielding gas supplied to the outer chamber 120 is specifically supplied to the space (shielding space) between the outer chamber 120 and the inner chamber 110.
所述工藝氣體被供給以形成高於大氣壓的壓力(高壓),例如,達到數氣壓到數十氣壓的壓力。當所述反應氣體的壓力為第一壓力且所述保護氣體的壓力為第二壓力時,這些可以保持在所設定關係。例如,所述第二壓力可設定為稍微大於所述第一壓力。這種壓力差提供防止所述反應氣體從內腔110洩漏的優點。 The process gas is supplied at a pressure higher than atmospheric pressure (high pressure), for example, reaching several to tens of atmospheres. When the pressure of the reaction gas is a first pressure and the pressure of the shield gas is a second pressure, these can be maintained at a predetermined relationship. For example, the second pressure can be set slightly higher than the first pressure. This pressure difference provides the advantage of preventing the reaction gas from leaking from the inner chamber 110.
排氣模組140是用於排出所述工藝氣體的結構。為了從內腔110排出所述反應氣體,在內腔110的上部連接排氣管141。為了從外腔120排出所述保護氣體,類似地可以具備與外腔120相連通的排氣管145。由於這些排氣管141彼此連通,藉此,在排氣過程中所述反應氣體被所述保護氣體稀釋,而其濃度降低。 The exhaust module 140 is used to exhaust the process gases. To exhaust the reaction gases from the inner chamber 110, an exhaust pipe 141 is connected to the upper portion of the inner chamber 110. Similarly, to exhaust the shielding gas from the outer chamber 120, an exhaust pipe 145 is provided, connected to the outer chamber 120. Because these exhaust pipes 141 are interconnected, the reaction gases are diluted by the shielding gas during the exhaust process, reducing their concentration.
參照圖2至圖3說明外腔120的緊固結構。圖2是示出圖1的高壓基板處理裝置100處於打開狀態的分解立體圖,圖3是示出圖2的高壓基板處理裝置100處於關閉狀態的截面圖。 The fastening structure of the outer chamber 120 is described with reference to Figures 2 and 3. Figure 2 is an exploded perspective view showing the high-pressure substrate processing apparatus 100 of Figure 1 in an open state, and Figure 3 is a cross-sectional view showing the high-pressure substrate processing apparatus 100 of Figure 2 in a closed state.
參照這些附圖,內腔110包括內殼(省略圖示)及內門115。所述內殼形成用於容納待處理基板W的所述處理空間,並且其下部可以具有開放形狀。內門115具有封閉所述內殼的開放的下部的形狀。內門115可以具有整體向下開口的槽形狀。 Referring to these figures, the inner chamber 110 includes an inner housing (not shown) and an inner door 115. The inner housing forms the processing space for accommodating substrates W to be processed, and its lower portion may be open. The inner door 115 is shaped to close the open lower portion of the inner housing. The inner door 115 may have a generally downwardly opening trough shape.
當內門115下降時,所述處理空間被開放(打開狀態,參見圖2)。在所述打開狀態下,從晶圓舟113卸載所述待處理基板,並將新的待處理基板裝載到晶圓舟113中。當內門115上升時,所述處理空間被封閉(關閉狀態,參照圖3)。在所述關閉狀態下,對待處理基板W進行例如熱處理、沉積等處理。 When the inner door 115 is lowered, the processing space is opened (open state, see Figure 2). In the open state, the substrates to be processed are unloaded from the wafer boat 113, and new substrates to be processed are loaded into the wafer boat 113. When the inner door 115 is raised, the processing space is closed (closed state, see Figure 3). In the closed state, the substrates to be processed W undergo processes such as thermal treatment and deposition.
外腔120也包括外殼121及外門125。外殼121具有容納內腔110的尺寸。在外殼121上安裝內殼(省略圖示)。當外門125移動時,也可以打開及關閉外殼121。外門125可以通過支撐構件119連接於內門115。支撐構件119可以具有沿著開閉方向E彈性地伸縮的彈簧支撐結構。開閉方向E是外門125在所述關閉狀態和所述打開狀態之間進行轉換的方向。當外殼121豎立時,開閉方向E可以為與升降或垂直方向基本相同的方向。在從所述打開狀態轉換到關閉狀態的過程中,支撐構件119允許外門125向內門115移動。在替代實施例中,支撐構件119可以為例如O形環。在另一實施例中,內門115和外門125可以集成在一起以形成單個構件。 The outer cavity 120 also includes an outer shell 121 and an outer door 125. The outer shell 121 has a size that accommodates the inner cavity 110. An inner shell (not shown) is mounted on the outer shell 121. When the outer door 125 moves, the outer shell 121 can also be opened and closed. The outer door 125 can be connected to the inner door 115 via a supporting member 119. The supporting member 119 can have a spring support structure that elastically extends and contracts along the opening and closing direction E. The opening and closing direction E is the direction in which the outer door 125 switches between the closed state and the open state. When the outer shell 121 is upright, the opening and closing direction E can be a direction that is substantially the same as the lifting or vertical direction. During the transition from the open state to the closed state, the support member 119 allows the outer door 125 to move toward the inner door 115. In an alternative embodiment, the support member 119 may be, for example, an O-ring. In another embodiment, the inner door 115 and the outer door 125 may be integrated together to form a single member.
外門125與內門115一起升降移動以打開及關閉外殼121。與上述不同,內門115和外門125可以不相連接,獨立地打開及關閉。 The outer door 125 moves up and down together with the inner door 115 to open and close the outer housing 121. Unlike the above, the inner door 115 and the outer door 125 can be opened and closed independently without being connected.
高壓基板處理裝置100還可以包括緊固模組150,用於在所述關閉狀態下緊固外殼121和外門125。由於內門115通過支撐構件119支撐在外門125上,因此,緊固模組150還確保內門115緊貼於所述內殼。緊固模組150將外腔120內的所述保護氣體維持在所述第二壓力。緊固模組150還施加緊固力以將內腔110內的所述反應氣體維持在所述第一壓力。 The high-pressure substrate processing apparatus 100 may further include a tightening module 150 for tightening the outer housing 121 and outer door 125 in the closed state. Because the inner door 115 is supported on the outer door 125 via the support member 119, the tightening module 150 ensures that the inner door 115 is tightly attached to the inner housing. The tightening module 150 maintains the protective gas within the outer chamber 120 at the second pressure. The tightening module 150 also applies a tightening force to maintain the reactive gas within the inner chamber 110 at the first pressure.
緊固模組150具體可以包括支撐突起151和卡止突起155。 The fastening module 150 may specifically include a supporting protrusion 151 and a locking protrusion 155.
支撐突起151是設置在外殼121上的突起。如本實施例,支撐突起151可以安裝在外殼121的內周面。支撐突起151可以沿所述內周面的圓周方向配置多個。多個支撐突起151可以沿開閉方向E配置在同一水準或同一平面。 The supporting protrusion 151 is a protrusion provided on the outer housing 121. As in this embodiment, the supporting protrusion 151 can be mounted on the inner circumferential surface of the outer housing 121. Multiple supporting protrusions 151 can be arranged along the circumference of the inner circumferential surface. The multiple supporting protrusions 151 can be arranged on the same level or plane along the opening and closing direction E.
卡止突起155具有當外門125沿開閉方向E移動時穿過一對相鄰的支撐突起151之間的尺寸。如同支撐突起151,卡止突起155可以具備多個。卡止突起155形成為在所述關閉狀態下相對於外門125移動並配置在支撐突起151上。 The latching protrusion 155 is sized to pass between a pair of adjacent support protrusions 151 when the outer door 125 moves in the opening and closing direction E. Like the support protrusions 151, multiple latching protrusions 155 may be provided. The latching protrusion 155 is configured to move relative to the outer door 125 in the closed state and is disposed on the support protrusion 151.
根據本實施例,卡止突起155可以在連接於外門125的狀態下移動。例如,卡止突起155可以可旋轉地設置在外門125上。 According to this embodiment, the locking protrusion 155 can move while being connected to the outer door 125. For example, the locking protrusion 155 can be rotatably provided on the outer door 125.
與上述不同,卡止突起155可以可移動地設置在外殼121上。卡止突起155在外殼121上向外門125移動並聯接至外門125。為此,外門125可以具有容納卡止突起155的槽狀結構(省略圖示)。 Unlike the above, the latching protrusion 155 can be movably provided on the outer housing 121. The latching protrusion 155 moves on the outer housing 121 toward the outer door 125 and is connected to the outer door 125. To this end, the outer door 125 can have a groove-like structure (not shown) to accommodate the latching protrusion 155.
當卡止突起155隨著移動而配置在支撐突起151上時可由支撐突起151支撐(緊固狀態)。由此,即使在所述工藝氣體的高壓下,外門125也可以保持牢固地緊固至外殼121的狀態。 When the locking protrusion 155 is positioned on the supporting protrusion 151 as it moves, it is supported by the supporting protrusion 151 (fastened state). This allows the outer door 125 to remain firmly fastened to the outer housing 121 even under the high pressure of the process gas.
當設置多個卡止突起155時,多個卡止突起155可以單獨旋轉。與此不同地,卡止突起155可以與旋轉構件157一體形成並與旋轉構件157一起旋轉。旋轉構件157可以具有如例示的環形形狀。在本實施例中,旋轉構件157可以稱為旋轉環。卡止突起155可以在旋轉環157的外周面向外突出形成。旋轉環157可被配置為沿旋轉方向R(以沿開閉方向E的旋轉軸為中心)旋轉。 When multiple latching protrusions 155 are provided, each latching protrusion 155 can rotate independently. Alternatively, the latching protrusion 155 can be integrally formed with the rotating member 157 and rotate together with the rotating member 157. The rotating member 157 can have a ring shape as shown. In this embodiment, the rotating member 157 can be referred to as a rotating ring. The latching protrusion 155 can be formed to protrude outward from the outer circumference of the rotating ring 157. The rotating ring 157 can be configured to rotate in a rotation direction R (centered around a rotation axis in the opening and closing direction E).
旋轉環157可以可旋轉地聯接至外門125。外門125具有上板126,旋轉環157{及卡止突起155}可位於上板126的下側。若外門125還具有下板127,則旋轉環157可以配置在上板126、下板127之間。在上板126和下板127中的每一個與旋轉環157之間可以配置軸承159。作為軸承159可以使用推力軸承(thrust bearing)。旋轉環157還可位於由外殼121{及支撐突起151}限定的區域內。 The swivel ring 157 can be rotatably coupled to the outer door 125. The outer door 125 has an upper plate 126, and the swivel ring 157 (and the latching protrusion 155) can be located on the lower side of the upper plate 126. If the outer door 125 also has a lower plate 127, the swivel ring 157 can be disposed between the upper and lower plates 126, 127. A bearing 159 can be disposed between each of the upper and lower plates 126, 127, and the swivel ring 157. A thrust bearing can be used as the bearing 159. The swivel ring 157 can also be located within the area defined by the outer housing 121 (and the support protrusion 151).
上板126在所述關閉狀態下與外殼121相接觸配置。上板126和下板127可以通過間隔件128連接。由此,下板127可以配置在與上板126不同的高度。間隔件128可以具有比上板126及/或下板127更小的直徑或寬度。間隔件128可以由與上板126及下板127獨立的構件而形成,或者可以與其中一個形成為單個構件。在由間隔件128確保的空間內設置有旋轉環157及卡止突起155。旋轉環157可以配置成在其中空部插入間隔件128的狀態下大致平行於外門125。 In the closed state, the upper plate 126 is arranged in contact with the outer housing 121. The upper plate 126 and the lower plate 127 may be connected by a spacer 128. This allows the lower plate 127 to be positioned at a different height than the upper plate 126. The spacer 128 may have a smaller diameter or width than the upper plate 126 and/or the lower plate 127. The spacer 128 may be formed as a separate component from the upper plate 126 and the lower plate 127, or may be formed as a single component with one of the two. A swivel ring 157 and a locking protrusion 155 are disposed within the space defined by the spacer 128. The swivel ring 157 may be positioned substantially parallel to the outer door 125 when the spacer 128 is inserted into the hollow portion of the spacer 128.
在所述關閉狀態下旋轉環157進行旋轉時,外門125可以不與旋轉環157的旋轉聯動。即,當上板126經由密封材料129保持與外殼121接觸的狀態時,旋轉環157可以獨立於所述接觸狀態旋轉。密封材料129可以為安裝在上板126的上面的O形環。 When rotating ring 157 rotates in the closed state, outer door 125 may not be linked to the rotation of rotating ring 157. Specifically, while upper plate 126 remains in contact with outer housing 121 via sealing material 129, rotating ring 157 can rotate independently of this contact. Sealing material 129 may be an O-ring mounted on upper plate 126.
參照圖4說明用於旋轉驅動旋轉環157的結構。圖4是用於說明驅動圖3的旋轉環157的結構的剖視立體圖。 Referring to FIG4 , the structure for driving the rotating ring 157 for rotation is described. FIG4 is a cross-sectional perspective view illustrating the structure for driving the rotating ring 157 of FIG3 .
進一步參考圖4,旋轉環157可以由驅動單元161驅動旋轉。 Further referring to FIG4 , the rotating ring 157 can be driven to rotate by the driving unit 161.
驅動單元161可以具有從動齒輪163、驅動齒輪164及馬達165。從動齒輪163可以形成在旋轉環157的內周面上。驅動齒輪164可以為與從動齒輪163相嚙合的齒輪。驅動齒輪164可以位於旋轉環157和間隔件128之間。 The drive unit 161 may include a driven gear 163, a drive gear 164, and a motor 165. The driven gear 163 may be formed on the inner circumference of the rotating ring 157. The drive gear 164 may be a gear that engages with the driven gear 163. The drive gear 164 may be located between the rotating ring 157 and the spacer 128.
根據所述構造,馬達165的旋轉力被傳遞至驅動齒輪164。連接馬達165的輸出軸和驅動齒輪164的傳動軸可以配置成貫穿下板127。當驅動齒輪164旋轉時,與驅動齒輪164相嚙合的從動齒輪163也隨之旋轉。當從動齒輪163旋轉時,旋轉環157進行旋轉,卡止突起155也沿著旋轉方向R(參照圖2)旋轉。隨此,卡止突起155在支撐突起151上移動或者移動到偏離支撐突起151的位置。 With this structure, the rotational force of motor 165 is transmitted to drive gear 164. The output shaft connecting motor 165 and drive gear 164 can be configured to pass through lower plate 127. When drive gear 164 rotates, driven gear 163, which engages with drive gear 164, also rotates. Rotating driven gear 163 also rotates rotating ring 157, causing locking protrusion 155 to rotate in rotation direction R (see Figure 2). Consequently, locking protrusion 155 moves on support protrusion 151 or to a position offset from support protrusion 151.
在旋轉卡止突起155的過程中,外門125不與卡止突起155一起旋轉。從馬達165輸出的動力只要足以旋轉卡止突起155即可,不包括外門125。 During the rotation of the locking protrusion 155, the outer door 125 does not rotate with the locking protrusion 155. The power output from the motor 165 is sufficient to rotate the locking protrusion 155, not including the outer door 125.
儘管說明了驅動單元161由齒輪163、164以及馬達165而構成的結果,但是本發明不限於此。還可以利用如氣缸等的其他致動器來構成驅動單元。 Although the drive unit 161 is described as being composed of gears 163 and 164 and a motor 165, the present invention is not limited thereto. The drive unit may also be composed of other actuators such as a cylinder.
將參照圖5及圖6說明高壓基板處理裝置100的其他形式。圖5是示出根據圖3的高壓基板處理裝置100的一變形例的高壓基板處理裝置100’的主要部分的截面圖。圖6示出圖3的高壓基板處理裝置100的另一變形例的高壓基板處理裝置100”的主要部分的截面圖。在這些圖中,與圖3中相同的組成標注相同的附圖標記,並且為了簡化附圖,省略軸承159。 Other forms of the high-pressure substrate processing apparatus 100 will be described with reference to Figures 5 and 6. Figure 5 is a cross-sectional view of the main components of a high-pressure substrate processing apparatus 100' according to a modified example of the high-pressure substrate processing apparatus 100 of Figure 3. Figure 6 is a cross-sectional view of the main components of a high-pressure substrate processing apparatus 100" according to another modified example of the high-pressure substrate processing apparatus 100 of Figure 3. In these figures, components identical to those in Figure 3 are labeled with the same reference numerals, and the bearing 159 is omitted for simplicity.
參照圖5,與先前的卡止突起155不同,卡止突起155’還具有上部155a。上部155a可以是配置為與上板126’的側面相對應的部分。 Referring to FIG. 5 , unlike the previous latching protrusion 155, the latching protrusion 155′ further includes an upper portion 155a. The upper portion 155a may be configured to correspond to the side surface of the upper plate 126′.
上部155a的上表面可以具有與上板126’的上表面大致相同的水準。由此,卡止突起155’的上表面可以與外殼121’接觸,並且卡止突起155’的下表面可以與支撐突起151接觸。 The upper surface of the upper portion 155a can be approximately level with the upper surface of the upper plate 126'. This allows the upper surface of the latching protrusion 155' to contact the outer housing 121', while the lower surface of the latching protrusion 155' can contact the supporting protrusion 151.
參照圖6,與先前的卡止突起155不同,卡止突起155”還具有上部155a和下部155b。上部155a可以是配置為與上板126’的側面相對應的部分。下部155b可以是配置為與下板127’的側面相對應的部分。 Referring to FIG. 6 , unlike the previous latching protrusion 155, the latching protrusion 155" further includes an upper portion 155a and a lower portion 155b. The upper portion 155a may be configured to correspond to the side surface of the upper plate 126'. The lower portion 155b may be configured to correspond to the side surface of the lower plate 127'.
上部155a的上表面可以具有與上板126’的上表面大致相同的水準。下部155b的下面可以具有與下板127’的下表面大致相同的水準。由此,卡止突起155”的上表面可以與外殼121”接觸,並且卡止突起155”的下表面可以與支撐突起151接觸。 The upper surface of upper portion 155a can be approximately level with the upper surface of upper plate 126'. The lower surface of lower portion 155b can be approximately level with the lower surface of lower plate 127'. This allows the upper surface of locking protrusion 155" to contact housing 121", while the lower surface of locking protrusion 155" can contact support protrusion 151.
以上,為了旋轉驅動旋轉環157’、157”,先前參照圖4說明的驅動單元161也可以應用於本變形例。 As described above, the drive unit 161 previously described with reference to FIG. 4 for rotationally driving the rotating rings 157′ and 157″ can also be applied to this variation.
在替代實施例中,作為所述旋轉構件可以採用轉盤(省略圖示)來代替旋轉環157、157’、157”。所述轉盤為實心盤,可以可旋轉地連接於上板126、126’、126”和底面。為了連接,在所述轉盤和上板126、126’、126”中的一個可以形成凹部以容納另一個的突出部。在所述突出部和所述凹部之間可以配置軸承。在所述轉盤的底面可以設置環形齒輪,可通過馬達和小齒輪旋轉驅動。 In an alternative embodiment, a rotating disc (not shown) can be used as the rotating member in place of the rotating ring 157, 157', 157". The rotating disc is a solid disc that can be rotatably connected to the upper plate 126, 126', 126" and the bottom surface. To facilitate the connection, a recess can be formed in one of the rotating disc and the upper plate 126, 126', 126" to accommodate a protrusion of the other. A bearing can be disposed between the protrusion and the recess. A ring gear can be provided on the bottom surface of the rotating disc, which can be rotationally driven by a motor and a pinion.
上述的緊固模組150、150’、150”也可以應用於與上述的雙腔室不同形式的半雙腔室。參照圖7說明所述緊固模組應用於所述半雙室的一例。圖7是示出根據本發明另一實施例的高壓基板處理裝置200處於關閉狀態的截面圖。與先前實施例中相同的構成標注相似的附圖標記,並省略對其的詳細說明。 The aforementioned fastening modules 150, 150', and 150" can also be applied to a semi-dual chamber, which is different from the aforementioned dual chamber. An example of the fastening module being applied to the semi-dual chamber will be described with reference to FIG7 . FIG7 is a cross-sectional view of a high-pressure substrate processing apparatus 200 in a closed state according to another embodiment of the present invention. Components identical to those in the previous embodiment are labeled with similar reference numerals, and detailed descriptions thereof will be omitted.
參照圖7,所述半雙腔室可以具有2個殼體(內殼211和外殼221)及一個門225。2個殼體(211、221)可以對應於上述實施例的內殼和外殼121。2個殼體(211、221)可以通過自身的形狀或者介設其他構件來結合形成封閉空間CS(對應於所述保護空間)。與上述的實施例相同,在內殼211可以投入所述基板和所述反應氣體。內殼211也可以通過注入到封閉空間CS中的保護氣體受保護。與上述的實施例不同,門225不受所述保護氣體的保護。 Referring to Figure 7 , the semi-dual chamber can have two shells (an inner shell 211 and an outer shell 221) and a door 225. The two shells (211, 221) can correspond to the inner shell and outer shell 121 of the aforementioned embodiment. The two shells (211, 221) can be combined to form a closed space CS (corresponding to the protective space) through their own shapes or through the interposition of other components. Similar to the aforementioned embodiment, the substrate and the reaction gas can be placed in the inner shell 211. The inner shell 211 can also be protected by the protective gas injected into the closed space CS. Unlike the aforementioned embodiment, the door 225 is not protected by the protective gas.
門225可以對應於上述實施例中的外門125。門225可以打開和關閉內殼211。緊固模組250應用於外殼221和門225。緊固模組250的具體結構可以與上述的緊固模組150、150’、150”基本相同。 The door 225 corresponds to the outer door 125 in the above-described embodiment. The door 225 can open and close the inner housing 211. The fastening module 250 is applied to the outer housing 221 and the door 225. The specific structure of the fastening module 250 can be substantially the same as the fastening modules 150, 150', and 150" described above.
在本說明書中,作為高壓基板處理裝置100、100’、100”、200舉例說明了具有雙腔室及半雙腔室的處理裝置,但是本發明不限於此。具有單個腔室的處理裝置也屬於本發明的範圍內。所述單個腔室由一個外殼和一個門而組成。在所述腔室內配置晶片基板,並供應用於處理所述晶片基板的工藝氣體,具體為反應氣體。緊固模組150、150’、150”、250也照樣應用於所述單個腔室。緊固模組150、150’、150”、250無論氣體壓力如何,都確保所述門牢固地緊固到所述殼體。 This specification describes high-pressure substrate processing apparatuses 100, 100', 100", and 200 as examples of processing apparatuses with dual chambers and semi-dual chambers, but the present invention is not limited thereto. Processing apparatuses with a single chamber also fall within the scope of the present invention. The single chamber comprises a housing and a door. Wafer substrates are positioned within the chamber, and process gases, specifically reactive gases, for processing the wafer substrates are supplied. Fastening modules 150, 150', 150", and 250 are also applicable to the single chambers. Fastening modules 150, 150', 150", and 250 ensure that the door is securely fastened to the housing regardless of gas pressure.
在本說明書中,例示了分批式(batch type)處理裝置,但本發明不限於此。本發明還可以照樣應用于單晶片型(single wafer type)處理裝置。 This specification illustrates a batch-type processing apparatus, but the present invention is not limited thereto. The present invention can also be applied to a single-wafer-type processing apparatus.
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or variations that do not depart from the spirit and scope of this invention shall be included in the scope of the patent application attached hereto.
100:高壓基板處理裝置 100: High-pressure substrate processing equipment
121:外殼 121: Shell
125:外門 125: Outer Gate
126:上板 126:On the board
127:下板 127: Lower the board
128:間隔件 128: Spacer
129:密封材料 129: Sealing material
150:緊固模組 150: Fastening module
151:支撐突起 151: Support protrusion
155:卡止突起 155: Locking protrusion
157:旋轉構件(或旋轉環) 157: Rotating member (or rotating ring)
159:軸承 159: Bearings
E:開閉方向 E:Opening and closing direction
R:旋轉方向 R: Rotation direction
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| KR102751841B1 (en) * | 2023-09-01 | 2025-01-10 | 주식회사 에이치피에스피 | High pressure wafer processing apparatus |
| KR102838342B1 (en) * | 2024-01-15 | 2025-07-25 | (주) 예스티 | Substrate processing apparatus |
| KR102735625B1 (en) * | 2024-02-28 | 2024-11-29 | 주식회사 에이치피에스피 | High pressure substrate processing apparatus |
| KR102715518B1 (en) * | 2024-03-26 | 2024-10-14 | (주) 예스티 | Wafer processing apparatus |
| KR102716996B1 (en) * | 2024-04-11 | 2024-10-16 | (주) 예스티 | Wafer processing apparatus and control method thereof |
| KR102788276B1 (en) * | 2024-06-17 | 2025-03-31 | (주) 예스티 | Wafer processing apparatus |
| KR102737706B1 (en) * | 2024-06-18 | 2024-12-04 | (주) 예스티 | Wafer processing apparatus |
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| JPH07283164A (en) * | 1994-04-14 | 1995-10-27 | Tokyo Electron Ltd | Heat treatment apparatus and heat treatment method |
| KR20200031798A (en) * | 2018-09-17 | 2020-03-25 | 주식회사 원익아이피에스 | Gas control apparatus of reactor for wafer processing |
| JP2023036566A (en) * | 2021-09-02 | 2023-03-14 | ウォニク アイピーエス カンパニー リミテッド | Substrate processing apparatus |
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| KR101553027B1 (en) * | 2014-01-20 | 2015-09-15 | 주식회사 풍산 | Opening and closing apparatus for semiconductor substrate processing chamber |
| KR102441994B1 (en) * | 2021-12-27 | 2022-09-08 | 주식회사 에이치피에스피 | High-speed cooling high pressure chamber |
| KR102614454B1 (en) * | 2023-05-22 | 2023-12-19 | 주식회사 에이치피에스피 | High pressure wafer processing apparatus |
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| JPH07283164A (en) * | 1994-04-14 | 1995-10-27 | Tokyo Electron Ltd | Heat treatment apparatus and heat treatment method |
| KR20200031798A (en) * | 2018-09-17 | 2020-03-25 | 주식회사 원익아이피에스 | Gas control apparatus of reactor for wafer processing |
| JP2023036566A (en) * | 2021-09-02 | 2023-03-14 | ウォニク アイピーエス カンパニー リミテッド | Substrate processing apparatus |
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