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TWI867045B - Smart photomask and its exposure apparatus, exposure method and exposure pattern forming method - Google Patents

Smart photomask and its exposure apparatus, exposure method and exposure pattern forming method Download PDF

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TWI867045B
TWI867045B TW109131004A TW109131004A TWI867045B TW I867045 B TWI867045 B TW I867045B TW 109131004 A TW109131004 A TW 109131004A TW 109131004 A TW109131004 A TW 109131004A TW I867045 B TWI867045 B TW I867045B
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micro
exposure
led elements
pattern
mask
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TW109131004A
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TW202111425A (en
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楊朝舜
黃靖文
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默司科技股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a smart photomask and its exposure apparatus, an exposure method and an exposure pattern forming method. The smart photomask includes a backplane, a plurality of first micro LEDs, and a protective layer. The plurality of first micro LEDs are arranged, in an array, on the backplane with the same size as a traditional photomask. The light emitting state is determined based on the control signal received from the circuit on the backplane, thereby defining an exposure pattern. The protective layer covers at least one or more of the plurality of micro LEDs. The size and pitch of the plurality of first micro LEDs are designed to meet the line width requirement of the exposure process. Therefore, the size of the smart mask can meet the requirement of the mask chunk parts of the exposure apparatus.

Description

智慧光罩及其曝光設備、曝光方法和曝光圖案形成方法Smart mask and exposure device, exposure method and exposure pattern forming method thereof

本發明屬於半導體製造設備及方法,特別是一種可調整圖案的智慧光罩及應用其之曝光設備和曝光方法。 The present invention relates to semiconductor manufacturing equipment and methods, in particular to a smart mask with adjustable patterns and exposure equipment and exposure methods using the same.

在半導體積體電路的製造過程中,微影成像(lithography)技術由於可將特定的圖形精確地定義在光阻層上,再藉由蝕刻製程將光阻層的圖案轉移到半導體基板上而形成所需的線路結構。在常見的微影成像製程中,其可依序分成以下步驟:光阻塗佈、烘烤、光罩定義曝光範圍、曝光、顯影出圖案、烘烤等,其中光阻層可利用可感光的高分子材料來形成,藉以利用曝光前後的被顯影能力差異來定義微結構的圖形。 In the manufacturing process of semiconductor integrated circuits, lithography technology can accurately define specific patterns on the photoresist layer, and then transfer the pattern of the photoresist layer to the semiconductor substrate through the etching process to form the required circuit structure. In the common lithography process, it can be divided into the following steps in sequence: photoresist coating, baking, mask definition of exposure range, exposure, developing pattern, baking, etc. The photoresist layer can be formed using photosensitive polymer materials, so as to define the pattern of the microstructure by using the difference in developing ability before and after exposure.

不同製程基板尺寸使用不同大小之光罩,一般而言光罩尺寸比待製程基板略大,其上定義了金屬圖案作為光源遮罩,用以保護光阻不受曝光源照射影響。 Different process substrate sizes use different sized masks. Generally speaking, the mask size is slightly larger than the substrate to be processed. A metal pattern is defined on it as a light source mask to protect the photoresist from being affected by the exposure source.

一般常見光罩本身的基板為膠片、玻璃或石英。光罩製造商在光罩基板上鍍上一層不透光之金屬膜,並覆蓋上光阻,之後使用高解析度之雷 射以掃描方式進行局部曝光定義圖案,接著顯影出定義的光阻圖案後,進行金屬蝕刻移除掉遮蔽的部分,如此方能完成一張光罩。一般商業模式為製程執行方設計光罩圖案後,委託光罩製造商生產光罩供其使用。 The substrate of the common photomask itself is film, glass or quartz. The mask manufacturer plates a layer of opaque metal film on the mask substrate and covers it with photoresist. Then, a high-resolution laser is used to scan and expose the local defined pattern. After the defined photoresist pattern is developed, metal etching is performed to remove the masked part. Only in this way can a mask be completed. The general business model is that the process executor designs the mask pattern and entrusts the mask manufacturer to produce the mask for its use.

奈米級或微米級製程流程需要多個不同的圖層堆疊以達成結構或多層電路之目的,故一個產品的往往需要多張不同圖案之光罩方能達成不同的圖形定義需求。 Nano-level or micron-level process flows require multiple different layers to be stacked to achieve the purpose of structures or multi-layer circuits. Therefore, a product often requires multiple masks with different patterns to achieve different graphic definition requirements.

每張光罩提供的圖案固定且無法變更。假設存在一個產品,其生產製造流程需要由十個不同的圖形與結構堆疊,則可能需要十張不同光罩以因應需求,即需要十張光罩的製造成本。 The pattern provided by each mask is fixed and cannot be changed. Assuming there is a product whose production process requires the stacking of ten different patterns and structures, ten different masks may be needed to meet the demand, which means the manufacturing cost of ten masks is required.

另外,由於光罩製作時間長,時間成本較高,從製程執行者設計發包到光罩產出一般而言需要數日,取得光罩後,製程執行者方能開始生產製造流程,因此使得生產製造的效率受到限制。 In addition, since the mask production time is long and the time cost is high, it generally takes several days from the design outsourcing by the process executor to the mask output. After obtaining the mask, the process executor can start the production and manufacturing process, thus limiting the efficiency of production and manufacturing.

在此摘要描述關於「本發明」的許多實施例。然而所述詞彙「本發明」僅僅用來描述在此說明書中揭露的某些實施例(不管是否已在權利要求中),而不是所有可能的實施例的完整描述。以下被描述為「本發明」的各個特徵或方面的某些實施例可以不同方式合併以形成。 Many embodiments of the "present invention" are described in this summary. However, the term "present invention" is only used to describe certain embodiments disclosed in this specification (whether or not in the claims), rather than a complete description of all possible embodiments. Certain embodiments of the various features or aspects described below as "present invention" can be combined in different ways to form.

本发明提供一種新的可調整圖案的智慧光罩及應用其之曝光設備和曝光方法,其可降低在半導體製程中的光罩製造成本並且提高生產製造的效率,以解决上述问题。 The present invention provides a new intelligent mask with adjustable pattern and an exposure device and exposure method using the same, which can reduce the mask manufacturing cost in the semiconductor manufacturing process and improve the production efficiency to solve the above problems.

本發明提出的可調整圖案的智慧光罩包括底板、多個第一微型發光二極體元件以及保護層。所述多個第一微型發光二極體元件以陣列排列設置於所述底板上。保護層覆蓋於所述多個微型發光二極體元件的至少其中之一或多個上。所述多個第一微型發光二極體元件至少其中之一的尺寸介於0.1微米至100微米之間,並且所述多個第一微型發光二極體元件至少其中兩相鄰的第一微型發光二極體元件之間的間距介於0.01微米至20微米之間。所述多個第一微型發光二極體元件基於從所述底板上的線路接收到的控制信號決定發光狀態,藉以定義曝光圖案。 The smart mask with adjustable pattern proposed by the present invention includes a base plate, a plurality of first micro-LED elements and a protective layer. The plurality of first micro-LED elements are arranged in an array on the base plate. The protective layer covers at least one or more of the plurality of micro-LED elements. The size of at least one of the plurality of first micro-LED elements is between 0.1 micron and 100 micron, and the spacing between at least two adjacent first micro-LED elements of the plurality of first micro-LED elements is between 0.01 micron and 20 micron. The plurality of first micro-LED elements determine the light-emitting state based on the control signal received from the circuit on the base plate, so as to define the exposure pattern.

在本發明一些實施例中,所述多個第一微型發光二極體元件組成的發光陣列面積介於625平方毫米(mm2)至52900平方毫米之間。 In some embodiments of the present invention, the light emitting array composed of the plurality of first micro-LED elements has an area ranging from 625 square millimeters (mm 2 ) to 52900 square millimeters.

在本發明一些實施例中,所述多個第一微型發光二極體元件的發光波長範圍介於200奈米至400奈米之間。 In some embodiments of the present invention, the luminescent wavelength range of the plurality of first micro-LED elements is between 200 nanometers and 400 nanometers.

在本發明一些實施例中,所述多個第一微型發光二極體元件至少其中之一包括發光部、第一電極以及第二電極。發光部具有第一面以及與所述第一面相對的第二面。第一電極設置於所述發光部的第一面上。第二電極設置於所述發光部的第二面上。 In some embodiments of the present invention, at least one of the plurality of first micro-light-emitting diode elements includes a light-emitting portion, a first electrode, and a second electrode. The light-emitting portion has a first surface and a second surface opposite to the first surface. The first electrode is disposed on the first surface of the light-emitting portion. The second electrode is disposed on the second surface of the light-emitting portion.

在本發明一些實施例中,所述多個第一微型發光二極體元件至少其中之一包括發光部、第一電極以及第二電極。發光部具有第一面以及與所述第一面相對的第二面。所述第一電極和所述第二電極皆設置於所述發光部的第一面上。 In some embodiments of the present invention, at least one of the plurality of first micro-LED elements includes a light-emitting portion, a first electrode, and a second electrode. The light-emitting portion has a first surface and a second surface opposite to the first surface. The first electrode and the second electrode are both disposed on the first surface of the light-emitting portion.

在本發明一些實施例中,所述底板具有第一區域以及第二區域,所述多個第一微型發光二極體元件設置於所述第一區域內。 In some embodiments of the present invention, the base plate has a first area and a second area, and the plurality of first micro-light-emitting diode elements are disposed in the first area.

在本發明一些實施例中,所述可調整圖案的智慧光罩更包括多個第二微型發光二極體元件(micro-LED),設置於所述底板的第二區域,並且用以經控制而顯示對位標記。 In some embodiments of the present invention, the adjustable pattern smart mask further includes a plurality of second micro-LED elements (micro-LEDs) disposed in the second area of the base plate and used to display alignment marks through control.

在本發明一些實施例中,所述第一區域包括所述底板的中心區域,並且所述第二區域包括所述底板的外圍區域。 In some embodiments of the present invention, the first area includes the central area of the base plate, and the second area includes the peripheral area of the base plate.

在本發明一些實施例中,所述多個第一微型發光二極體元件分為多個曝光單元區域,並且所述多個曝光單元區域至少其中之一包括以x*y陣列排列的多個所述第一微型發光二極體元件,其中x、y為自然數。 In some embodiments of the present invention, the plurality of first micro-LED elements are divided into a plurality of exposure unit areas, and at least one of the plurality of exposure unit areas includes a plurality of the first micro-LED elements arranged in an x*y array, where x and y are natural numbers.

在本發明一些實施例中,當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其中之一曝光單元區域中其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的發光狀態被調整以補償所述z個無法正常工作的第一微型發光二極體元件,其中z為自然數,且z<x*y。 In some embodiments of the present invention, when there are z first micro-LED elements in one of the exposure unit regions that are not working properly, the luminous state of at least one of the remaining first micro-LED elements in one of the exposure unit regions that are in a normal working state is adjusted to compensate for the z first micro-LED elements that are not working properly, where z is a natural number and z<x*y.

在本發明一些實施例中,當所述多個第一微型發光二極體元件處於正常工作狀態時,所述多個第一微型發光二極體元件經控制而在第一期間內被維持點亮。 In some embodiments of the present invention, when the plurality of first micro-LED elements are in a normal working state, the plurality of first micro-LED elements are controlled to remain lit during a first period.

在本發明一些實施例中,當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的點亮時間被調整為大於所述第一期間的第二期間。 In some embodiments of the present invention, when z of the first micro-LED elements in one of the exposure unit regions are in a state of being unable to work normally, the lighting time of at least one of the remaining first micro-LED elements in a normal working state is adjusted to a second period greater than the first period.

在本發明一些實施例中,所述第一期間和所述第二期間符合以 下關係:

Figure 109131004-A0305-02-0007-1
,其中,T1為所述第一期間,T2為所述第二期間, 並且n為一常數。 In some embodiments of the present invention, the first period and the second period meet the following relationship:
Figure 109131004-A0305-02-0007-1
, wherein T1 is the first period, T2 is the second period, and n is a constant.

在本發明一些實施例中,當所述多個第一微型發光二極體元件處於正常工作狀態時,所述多個第一微型發光二極體元件經控制而具有第一亮度。 In some embodiments of the present invention, when the plurality of first micro-LED elements are in a normal working state, the plurality of first micro-LED elements are controlled to have a first brightness.

在本發明一些實施例中,當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的發光亮度被調整為大於所述第一亮度的第二亮度。 In some embodiments of the present invention, when z of the first micro-LED elements in one of the exposure unit regions are in a state of being unable to work normally, the light luminance of at least one of the remaining first micro-LED elements in a normal working state is adjusted to a second luminance greater than the first luminance.

在本發明一些實施例中,各所述多個曝光單元區域小於或等於所述曝光圖案中的最小線寬。 In some embodiments of the present invention, each of the multiple exposure unit areas is less than or equal to the minimum line width in the exposure pattern.

在本發明一些實施例中,所述多個第一微型發光二極體元件至少其中之一的尺寸介於0.1微米至20微米之間。 In some embodiments of the present invention, the size of at least one of the plurality of first micro-LED elements is between 0.1 microns and 20 microns.

在本發明一些實施例中,所述多個第一微型發光二極體元件至少其中兩相鄰的第一微型發光二極體元件之間的間距介於1微米至4微米之間。 In some embodiments of the present invention, the distance between at least two adjacent first micro-LED elements among the plurality of first micro-LED elements is between 1 micron and 4 microns.

本發明實施例提出一種應用所述可調整圖案的智慧光罩的曝光設備,包括承載平台、所述可調整圖案的智慧光罩、控制器以及光罩夾持部。承載平台,具有適於設置待曝光物件的承載區。所述可調整圖案的智慧光罩包括多個第一微型發光二極體元件(micro-LED),其中各所述第一微型發光二極體元件接收控制信號,並且基於接收到的所述控制信號決定發光狀態,藉以定義曝光圖案。所述控制器電性連接所述多個第一微型發光二極體元件,用以產生所述控制信號以分別控制所述多個第一微型發光二極體元件的發光狀態。所述光罩夾持部相對所述承載平台配置,用以固定所述可調整圖案的智慧光罩,其中所述曝光設備在執行對位操作時,所述光罩夾持部帶動所述可調整圖案的智慧光罩以與設置於所述承載區上的待曝光物件對齊。 The embodiment of the present invention proposes an exposure device for applying the smart mask with adjustable pattern, including a supporting platform, the smart mask with adjustable pattern, a controller and a mask clamping part. The supporting platform has a supporting area suitable for setting the object to be exposed. The smart mask with adjustable pattern includes a plurality of first micro-light emitting diode elements (micro-LED), wherein each of the first micro-light emitting diode elements receives a control signal and determines a light emitting state based on the received control signal to define an exposure pattern. The controller is electrically connected to the plurality of first micro-light emitting diode elements to generate the control signal to control the light emitting states of the plurality of first micro-light emitting diode elements respectively. The mask clamping part is arranged relative to the carrying platform to fix the smart mask with adjustable pattern, wherein when the exposure device performs the alignment operation, the mask clamping part drives the smart mask with adjustable pattern to align with the object to be exposed set on the carrying area.

在本發明一些實施例中,所述曝光設備更包括檢測器。所述檢測器用以檢測所述多個第一微型發光二極體元件是否響應所述控制信號而被點亮。 In some embodiments of the present invention, the exposure device further includes a detector. The detector is used to detect whether the plurality of first micro-LED elements are lit in response to the control signal.

本發明實施例提出一種曝光方法,包括將以陣列組成的多個第一微型發光二極管元件(micro-LED)與基板對齊,並且使所述多個第一微型發光二極管元件的發光面朝向所述基板;發送第一控制信號至所述多個第一微型發光二極體元件,使所述多個第一微型發光二極體元件響應於所述控制信號點亮並顯示第一發光圖案;以及以所述第一發光圖案照射所述待曝光物件,藉以在所述待曝光物件上定義第一曝光圖案。 The embodiment of the present invention provides an exposure method, including aligning a plurality of first micro-LED elements (micro-LED) formed in an array with a substrate, and making the light-emitting surfaces of the plurality of first micro-LED elements face the substrate; sending a first control signal to the plurality of first micro-LED elements, so that the plurality of first micro-LED elements light up in response to the control signal and display a first light-emitting pattern; and irradiating the object to be exposed with the first light-emitting pattern, thereby defining a first exposure pattern on the object to be exposed.

在本發明一些實施例中,所述曝光方法更包括發送第二控制信號至所述多個第一微型發光二極體元件,使所述多個第一微型發光二極體元件響應於所述控制信號點亮並顯示第二發光圖案;以及以所述第二發光圖案照射所述待曝光物件,藉以在所述待曝光物件上定義第二曝光圖案。 In some embodiments of the present invention, the exposure method further includes sending a second control signal to the plurality of first micro-LED elements, so that the plurality of first micro-LED elements light up in response to the control signal and display a second light-emitting pattern; and irradiating the object to be exposed with the second light-emitting pattern, thereby defining a second exposure pattern on the object to be exposed.

在本發明一些實施例中,所述曝光方法更包括:發送對位信號至所述多個第二微型發光二極體元件,使所述多個第二微型發光二極體元件響應於所述對位信號而點亮,並顯示對位圖案照射所述待曝光物件,以在所述待曝光物件上定義出對應所述對位圖案的對位標記。 In some embodiments of the present invention, the exposure method further includes: sending an alignment signal to the plurality of second micro-LED elements, so that the plurality of second micro-LED elements light up in response to the alignment signal, and displaying an alignment pattern to illuminate the object to be exposed, so as to define an alignment mark corresponding to the alignment pattern on the object to be exposed.

在本發明一些實施例中,將以陣列組成的多個第一微型發光二極體元件(micro-LED)與待曝光物件對齊,並且使所述多個第一微型發光二極體元件的發光面朝向所述待曝光物件的步驟包括:辨識所述底板上的第一對位標記和所述待曝光物件上的第二對位標記,以取得所述第一對位標記和所述第二對位標記的位置資訊,其中所述第一對位標記和所述第二對位標記對應相同的第一對位圖案;以及調整所述待曝光物件和所述底板的相對位置,以使所述第一對位標記和第二對位標記在一軸向上對齊。 In some embodiments of the present invention, the step of aligning a plurality of first micro-LED elements (micro-LEDs) formed in an array with an object to be exposed and making the light-emitting surfaces of the plurality of first micro-LED elements face the object to be exposed includes: identifying a first alignment mark on the base plate and a second alignment mark on the object to be exposed to obtain position information of the first alignment mark and the second alignment mark, wherein the first alignment mark and the second alignment mark correspond to the same first alignment pattern; and adjusting the relative position of the object to be exposed and the base plate to align the first alignment mark and the second alignment mark in a uniaxial direction.

在本發明一些實施例中,所述曝光方法更包括:發送對位信號至所述多個第二微型發光二極體元件,使所述多個第二微型發光二極體元件響應於所述對位信號而點亮,並顯示第二對位圖案照射所述待曝光物件,以基於所述第二對位圖案將所述待曝光物件上的所述第二對位標記更新為第三對位標記。 In some embodiments of the present invention, the exposure method further includes: sending an alignment signal to the plurality of second micro-LED elements, so that the plurality of second micro-LED elements light up in response to the alignment signal, and display a second alignment pattern to illuminate the object to be exposed, so as to update the second alignment mark on the object to be exposed to a third alignment mark based on the second alignment pattern.

在本發明一些實施例中,所述第三對位標記包括所述第一對位圖案和所述第二對位圖案之結合。 In some embodiments of the present invention, the third alignment mark includes a combination of the first alignment pattern and the second alignment pattern.

本發明實施例提出一種可調整圖案的智慧光罩,適於搭配曝光設備使用,所述智慧光罩包括底板、多個第一微型發光二極體元件以及保護層。所述底板適於設置在所述曝光設備的光罩夾持部上,並受到所述光照夾持部所固定。所述多個第一微型發光二極體元件以陣列排列設置於所述底板上,用以經點亮而顯示用以定義曝光圖案的發光圖案。所述保護層覆蓋於所述多個微型發光二極體元件的至少其中之一或多個上。所述多個第一微型發光二極體元件至少其中之一的尺寸介於0.1微米至20微米之間,並且所述多個第一微型發光二極體元件的數量設置為使所述陣列具有介於625平方毫米至52900平方毫米之間的發光面積。 The present invention provides a pattern-adjustable smart mask suitable for use with an exposure device, wherein the smart mask comprises a base plate, a plurality of first micro-LED elements, and a protective layer. The base plate is suitable for being arranged on a mask clamping portion of the exposure device and fixed by the illumination clamping portion. The plurality of first micro-LED elements are arranged in an array on the base plate to be lit up to display a light pattern for defining an exposure pattern. The protective layer covers at least one or more of the plurality of micro-LED elements. The size of at least one of the plurality of first micro-LED elements is between 0.1 micron and 20 microns, and the number of the plurality of first micro-LED elements is set so that the array has a light-emitting area between 625 square millimeters and 52900 square millimeters.

在本發明一些實施例中,適於搭配智慧光罩使用的所述曝光設備包括對位式曝光設備(Mask Aligner)或步進式曝光設備(Stepper)。 In some embodiments of the present invention, the exposure equipment suitable for use with a smart mask includes a mask aligner or a stepper.

在本發明一些實施例中,所述光罩夾持部包括真空吸槽。 In some embodiments of the present invention, the mask clamping portion includes a vacuum suction groove.

本發明實施例提出一種智慧光罩的曝光圖案形成方法,其中定義所述微型發光二極體元件陣列的最小解析單位,以使所述微型發光二極體元件陣列畫分為多個曝光單元區域,其中各所述曝光單元區域包括至少一微型發光二極體元件;所述智慧光罩包括多個以陣列排列的微型發光二極體元件,所述曝光圖案形成方法包括:定義所述微型發光二極體元件陣列的最小解析單 位,以使所述微型發光二極體元件陣列畫分為多個曝光單元區域,其中各所述曝光單元區域包括至少一微型發光二極體元件;基於定義的所述最小解析單位生成一可視化圖形介面,其中所述可視化圖形介面包括多個選取單元,並且所述多個選取單元分別與所述多個曝光單元區域相互對應;以及通過所述多個選取單元接收參數設定資訊,依據所述參數設定資訊發出控制信號,以調整相應的所述單位區域中的微型發光二極體元件的曝光參數,藉以定義出曝光圖案。 The present invention provides a method for forming an exposure pattern of a smart mask, wherein the minimum resolution unit of the micro-LED array is defined so that the micro-LED array is divided into a plurality of exposure unit regions, wherein each of the exposure unit regions includes at least one micro-LED element; the smart mask includes a plurality of micro-LED elements arranged in an array, and the exposure pattern forming method includes: defining the minimum resolution unit of the micro-LED array so that the micro-LED array is divided into a plurality of exposure unit regions; exposure unit areas, wherein each of the exposure unit areas includes at least one micro-LED element; generating a visual graphic interface based on the defined minimum resolution unit, wherein the visual graphic interface includes a plurality of selection units, and the plurality of selection units correspond to the plurality of exposure unit areas respectively; and receiving parameter setting information through the plurality of selection units, and sending a control signal according to the parameter setting information to adjust the exposure parameters of the micro-LED elements in the corresponding unit area, thereby defining an exposure pattern.

在本發明一些實施例中,所述曝光參數包括所述微型發光二極體元件的亮滅、發光強度、連續發光時間以及閃爍發光時間累計值之其中一者或多者。 In some embodiments of the present invention, the exposure parameters include one or more of the brightness, luminous intensity, continuous luminous time, and cumulative value of flashing luminous time of the micro-LED element.

10:電腦系統 10: Computer system

12:可視化圖形介面 12: Visual Graphical Interface

100:曝光設備 100:Exposure equipment

110:承載平台 110: Carrying platform

112:承載區 112: Loading area

120:智慧光罩 120: Wisdom Light Shield

121:底板 121: Base plate

122:微型發光二極體元件(micro LED) 122: Micro LEDs

130:控制器 130: Controller

140:光罩夾持部 140: Mask clamping part

150:檢測器 150: Detector

50:待曝光物件 50: Objects to be exposed

51:感光材料 51: Photosensitive materials

511:被曝光區域 511: Exposed area

512:未曝光區域 512: Unexposed area

52:基板 52: Substrate

220:智慧光罩 220: Wisdom Light Shield

221:底板 221: Base plate

222:微型發光二極體元件(micro LED) 222: Micro LEDs

222a:微型發光二極體陣列 222a: Micro LED array

223:保護層 223: Protective layer

310:曝光單元區域 310: Exposure unit area

322:微型發光二極體元件(micro LED) 322: Micro LEDs

410:曝光單元區域 410: Exposure unit area

422:微型發光二極體元件(micro LED) 422: Micro LEDs

503~507:永久暗點 503~507: Permanent dark spots

510:曝光單元區域 510: Exposure unit area

520:曝光單元區域 520: Exposure unit area

522:微型發光二極體元件(micro LED) 522: Micro LEDs

522a:micro LED陣列 522a: micro LED array

522b:永久暗點 522b: Permanent dark spot

530:曝光單元區域 530: Exposure unit area

620:智慧光罩 620: Wisdom Light Shield

624:對位標記 624: Alignment mark

6241~6244:對位圖案 6241~6244: Alignment pattern

6245:空白範圍 6245:Blank range

圖1是本發明一些實施例的曝光系統的示意圖;圖2A和圖2B是本發明一些實施例的可調整圖案的智慧光罩(smart mask with adjustable pattern)的示意圖;圖3是本發明一些實施例的可調整圖案的智慧光罩的曝光圖案示意圖;圖4A、4B和4C是本發明一些實施例的智慧光罩的局部圖案示意圖;圖5是本發明一些實施例的智慧光罩的暗點補償示意圖;圖6是本發明另一些實施例的可調整圖案的智慧光罩的示意圖;圖7是依照圖6的一些實施例的對位標記的示意圖;圖8是本發明一些實施例的可調整圖案的智慧光罩的控制介面示意圖;以及圖9是本發明一些實施例的曝光方法的步驟流程圖;以及 圖10是本發明一些實施例的曝光方法的步驟流程圖。 FIG. 1 is a schematic diagram of an exposure system according to some embodiments of the present invention; FIG. 2A and FIG. 2B are schematic diagrams of a smart mask with adjustable pattern according to some embodiments of the present invention. pattern); FIG. 3 is a schematic diagram of the exposure pattern of the smart mask with adjustable pattern in some embodiments of the present invention; FIG. 4A, 4B and 4C are schematic diagrams of partial patterns of the smart mask in some embodiments of the present invention; FIG. 5 is a schematic diagram of dark spot compensation of the smart mask in some embodiments of the present invention; FIG. 6 is a schematic diagram of the smart mask with adjustable pattern in other embodiments of the present invention; FIG. 7 is a schematic diagram of the alignment mark in some embodiments according to FIG. 6; FIG. 8 is a schematic diagram of the control interface of the smart mask with adjustable pattern in some embodiments of the present invention; and FIG. 9 is a step flow chart of the exposure method in some embodiments of the present invention; and FIG. 10 is a step flow chart of the exposure method in some embodiments of the present invention.

本發明提出了一種新的可調整圖案的智慧光罩(smart mask with adjustable pattern)及應用其之曝光設備和曝光方法,以解決背景技術中提到的問題以及上述問題。為使本發明的上述目的、特徵和優點能夠更為明顯易懂,下面結合附圖對本發明的具體實施例做詳細的說明。下列本發明各實施例的敘述僅是為了說明而為例示,並不表示為本發明的全部實施例或將本發明限制於特定實施例。另外,相同的元件編號可用以代表相同、相應或近似的元件,並非僅限定於代表相同的元件。 The present invention proposes a new smart mask with adjustable pattern and an exposure device and exposure method using the same to solve the problems mentioned in the background technology and the above-mentioned problems. In order to make the above-mentioned purposes, features and advantages of the present invention more clear and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the attached figures. The following descriptions of the various embodiments of the present invention are only for illustration and are not intended to represent all embodiments of the present invention or to limit the present invention to specific embodiments. In addition, the same component number can be used to represent the same, corresponding or similar components, and is not limited to representing the same components.

為了更清楚的表示本揭露所欲表彰的發明概念,在本揭露的圖式中所繪示的元件尺寸、比例及數量可能經過調整,並非代表實際實施時的狀態,於此合先敘明。 In order to more clearly express the inventive concept that this disclosure intends to demonstrate, the size, proportion and quantity of the components shown in the drawings of this disclosure may be adjusted and do not represent the actual implementation status, which is hereby explained in advance.

在本揭露中,任何提及“第一”、“第二”等描述僅是用以描述不同的元件、區域、階層或步驟,並非用以限定所述元件、區域、階層或步驟的順序性(申請專利範圍有明確要求者,不在此限)。 In this disclosure, any reference to "first", "second", etc. is only used to describe different elements, regions, layers or steps, and is not used to limit the order of the elements, regions, layers or steps (except for those clearly required in the scope of the patent application).

本揭露所提及的“大約”或“實質上”等用語是為了表彰製程中具有不顯著改變特定元件的操作、或不顯著影響元件功能或目的的方式的數值誤差範圍,此誤差範圍對於本領域具有通常知識者為明確的。舉例來說,若描述“大約0.1到1”的範圍,其實質上可以包括0%-5%偏差的範圍(以不顯著影響元件操作/目的/功能為前提)。 The terms "approximately" or "substantially" mentioned in this disclosure are intended to recognize the range of numerical errors in the process that do not significantly change the operation of a specific component or do not significantly affect the function or purpose of the component. This error range is clear to those with ordinary knowledge in this field. For example, if a range of "approximately 0.1 to 1" is described, it can substantially include a range of 0%-5% deviation (assuming that it does not significantly affect the operation/purpose/function of the component).

本揭露所提及的“連接”或“耦接”等用語並非限定元件之間不能存在有任何間隔元件。亦即,兩元件之間相互連接或耦接可表示兩元件相互直接連接/耦接,或是通過其他元件相互連接/耦接。 The terms "connection" or "coupling" mentioned in this disclosure do not limit the existence of any intervening elements between the elements. In other words, the connection or coupling between two elements can mean that the two elements are directly connected/coupled to each other, or are connected/coupled to each other through other elements.

本揭露所提及的空間關係,例如“在…之上”、“在…之下”、“朝上”、“朝下”、“在…左側”、“在…右側”等,皆是基於圖式所呈現的相對位置進行的示例性說明,並非用以限定實際產品的配置狀態。 The spatial relationships mentioned in this disclosure, such as "above...", "below...", "upward", "downward", "to the left of...", "to the right of...", etc., are all exemplary descriptions based on the relative positions presented in the diagrams, and are not intended to limit the configuration status of the actual product.

圖1是本發明一些實施例的曝光設備的示意圖。請參照圖1,曝光設備100(也可稱為自發光曝光系統100)包括承載平台110、可調整圖案的智慧光罩120、控制器130、以及光罩夾持部140。 FIG1 is a schematic diagram of an exposure device of some embodiments of the present invention. Referring to FIG1 , the exposure device 100 (also referred to as a self-luminous exposure system 100) includes a carrier platform 110, a smart mask 120 with adjustable patterns, a controller 130, and a mask clamping unit 140.

承載平台110具有適於設置待曝光物件50的承載區112,其中所述待曝光物件50可例如是晶圓或半導體基板。在一些實施例中,所述承載平台110可以真空吸附或機械夾持方式將待曝光物件50固定於承載區112上,但本發明不僅限於此。 The carrying platform 110 has a carrying area 112 suitable for placing an object 50 to be exposed, wherein the object 50 to be exposed may be, for example, a wafer or a semiconductor substrate. In some embodiments, the carrying platform 110 may fix the object 50 to be exposed on the carrying area 112 by vacuum adsorption or mechanical clamping, but the present invention is not limited thereto.

智慧光罩120包括多個微型發光二極體元件122(以下簡稱為“micro LED”),其中各個micro LED 122會接收控制信號,並且基於接收到的控制信號決定發光狀態(例如,是否點亮、點亮時間、亮度等),藉以定義曝光圖案。在一些實施例中,智慧光罩120也可稱為Micro LED陣列燈,其可例如是由多個micro LED 122組成之陣列並且直接或間接的設置在底板121上,其中每個micro LED 122可以獨立或區域性地被選擇控制對應的發光狀態,並且單一個微發光二極體元件122或單一個微發光二極體元件122陣列區塊可以形成一個曝光製程(例如是黃光製程)的最小解析單位。多個最小解析單位即會組成對應的曝光圖案來照射待曝光物件50,以使待曝光物件50上呈現出對應於所述曝光圖案的光阻圖案。在此應說明的是,本發明中並不限制微型發光二極體的種類。後續會進一步具體說明智慧光罩120的配置實施例。 The smart mask 120 includes a plurality of micro light emitting diode elements 122 (hereinafter referred to as "micro LEDs"), wherein each micro LED 122 receives a control signal and determines a light emitting state (e.g., whether to light up, light-up time, brightness, etc.) based on the received control signal to define an exposure pattern. In some embodiments, the smart mask 120 may also be referred to as a Micro LED array light, which may be, for example, an array composed of a plurality of micro LEDs 122 and directly or indirectly disposed on the base plate 121, wherein each micro LED 122 may be independently or regionally selected to control a corresponding light emitting state, and a single micro LED element 122 or a single micro LED element 122 array block may form a minimum resolution unit of an exposure process (e.g., a yellow light process). Multiple minimum resolution units will form corresponding exposure patterns to illuminate the object to be exposed 50, so that a photoresist pattern corresponding to the exposure pattern appears on the object to be exposed 50. It should be noted here that the type of micro-LED is not limited in the present invention. The configuration embodiment of the smart mask 120 will be further described in detail later.

控制器130電性連接micro LED 122,並用以產生控制信號以分別控制各個micro LED 122的發光狀態。在一些實施例中,控制器130可以是設置在micro LED 122的底板中的矩陣電路,用以控制每個micro LED 122之亮與暗。 The controller 130 is electrically connected to the micro LED 122 and is used to generate a control signal to control the light-emitting state of each micro LED 122. In some embodiments, the controller 130 can be a matrix circuit disposed in the base plate of the micro LED 122 to control the brightness of each micro LED 122.

光罩夾持部140是相對承載平台110配置,用以固定智慧光罩120,其中當曝光設備100在執行對位操作時,光罩夾持部140會帶動智慧光罩120以與設置於承載區112的待曝光物件50對齊。在一些實施例中,光罩夾持部140可例如是以真空吸附或機械夾持方式固定智慧光罩120,但本發明不僅限於此。 The mask clamping part 140 is arranged relative to the supporting platform 110 to fix the smart mask 120, wherein when the exposure device 100 performs the alignment operation, the mask clamping part 140 will drive the smart mask 120 to align with the object to be exposed 50 disposed in the supporting area 112. In some embodiments, the mask clamping part 140 can fix the smart mask 120 by vacuum adsorption or mechanical clamping, for example, but the present invention is not limited thereto.

在一些實施例中,曝光設備100更包括檢測器150。檢測器150是用以檢測各個micro LED 122是否響應所述控制信號而被點亮,其中檢測器150可例如為可即時觀察微型圖案之顯微鏡組或影像感應器。在一些實施例中,檢測器150也可以用來辨識智慧光罩120和待曝光物件50的對位標記,藉以根據對位標記來取得智慧光罩120和待曝光物件50之間的相對位置資訊。後續實施例會進一步說明。 In some embodiments, the exposure device 100 further includes a detector 150. The detector 150 is used to detect whether each micro LED 122 is lit in response to the control signal, wherein the detector 150 can be, for example, a microscope set or an image sensor that can observe the micro pattern in real time. In some embodiments, the detector 150 can also be used to identify the alignment mark of the smart mask 120 and the object to be exposed 50, so as to obtain the relative position information between the smart mask 120 and the object to be exposed 50 according to the alignment mark. The subsequent embodiments will further explain.

在一些實施例中,曝光設備100例如是通過外部的電腦系統10執行控制軟體以控制智慧光罩120的運作。舉例來說,電腦系統10可以接收檢測器150所檢測到的各個微型發光二極體發光數據,並且基於發光數據來校正各個/各單位區域的micro LED 122的曝光參數。在一些應用中,電腦系統10可用來預設出廠前或曝光前之一顆或一個單位區域之micro LED 122的光強度,進行事先補償以達曝光均一性。此外,曝光設備100的控制軟體可提供一簡明的可視化圖形介面(如12),讓使用者可以即時選擇欲曝光的圖案與每個黃光製程之最小解析單位,即時調整曝光參數進行曝光,並可以編輯、讀取、儲存、另存任一曝光圖形設計與曝光參數可包含但不限於:微發光二極體的亮或暗、發 光強度、連續發光或閃爍發光累計的時間等。在一些實施例中,電腦系統10可進一步的包含每一個單顆micro LED 122的發光強度補償功能、發光時間控制、發光模式控制、曝光圖案及參數儲存與編輯功能等的控制功能。 In some embodiments, the exposure device 100 controls the operation of the smart mask 120 by, for example, executing control software through an external computer system 10. For example, the computer system 10 can receive the luminous data of each micro-LED detected by the detector 150, and calibrate the exposure parameters of each/each unit area of the micro LED 122 based on the luminous data. In some applications, the computer system 10 can be used to preset the light intensity of one or a unit area of the micro LED 122 before shipment or before exposure, and perform pre-compensation to achieve exposure uniformity. In addition, the control software of the exposure device 100 can provide a simple visual graphical interface (such as 12), allowing the user to instantly select the pattern to be exposed and the minimum resolution unit of each yellow light process, instantly adjust the exposure parameters for exposure, and edit, read, store, and save any exposure pattern design and exposure parameters, which may include but are not limited to: the brightness or darkness of the micro-luminescent diode, the luminous intensity, the accumulated time of continuous luminescence or flashing luminescence, etc. In some embodiments, the computer system 10 may further include control functions such as the luminous intensity compensation function of each single micro LED 122, luminous time control, luminous mode control, exposure pattern and parameter storage and editing functions.

在一些實施例中,曝光設備100中的承載平台110、光罩夾持部140以及檢測器150可以是基於一般的曝光設備機構來實現,例如是常見的對位式曝光設備(Mask Aligner)或步進式曝光設備(Stepper)機構。因此所述曝光設備100還可包含(但不限於)可調整待製程基板與光罩之水平相對位置之機構、以及具可調整待製程基板與光罩在水平面上相對角度之機構。換言之,智慧光罩120可兼容於傳統的曝光設備機構。以使用對位式曝光機為例,4吋(100mm)晶圓之黃光微影製程一般使用5吋光罩(127mm x 127mm);8吋(200mm)晶圓使用9吋光罩(228mm x 228mm),而本實施例中的智慧光罩120因為是利用micro LED 122製作,故可以在確保製程線寬要求的前提底下,實現上述光罩尺寸,因此可兼容於傳統的曝光設備。 In some embodiments, the carrying platform 110, the mask clamping part 140 and the detector 150 in the exposure device 100 can be implemented based on a general exposure device mechanism, such as a common mask aligner or stepper mechanism. Therefore, the exposure device 100 may also include (but not limited to) a mechanism that can adjust the horizontal relative position of the substrate to be processed and the mask, and a mechanism that can adjust the relative angle of the substrate to be processed and the mask on the horizontal plane. In other words, the smart mask 120 is compatible with the traditional exposure device mechanism. Taking the use of a registration type exposure machine as an example, the yellow light lithography process of a 4-inch (100mm) wafer generally uses a 5-inch mask (127mm x 127mm); an 8-inch (200mm) wafer uses a 9-inch mask (228mm x 228mm). Since the smart mask 120 in this embodiment is made using micro LEDs 122, the above mask size can be achieved while ensuring the process line width requirements, and is therefore compatible with traditional exposure equipment.

具體而言,本實施例所述的曝光設備100可是以智慧光罩120取代或搭配使用傳統光罩執行曝光製程,藉由發光二極體的亮與暗來達到特定區域之感光材料曝光與否的要求。在藉由曝光設備100進行曝光時,可先將智慧光罩120設置於光罩夾持部140上(即是常見對位式曝光機之原光罩位置上),例如是通過真空吸槽機構來固定智慧光罩120。待曝光物件50則維持原本常用曝光機之固定基板方式以承載平台110之固定光罩用的承載區112及其固定機構固定(例如是真空吸槽)。智慧光罩120之發光面朝向待曝光物件50(例如製程基板)中設置有感光材料51的一側,其中所述感光材料51設置於待曝光物件50的基板52上,並且感光材料51可例如為光阻或感光型高分子材料等,但本發明不以此為限。一般而言,待曝光物件50之感光材料51面朝上,即智慧光罩120之發光面朝下。此曝光方式可使用常見對位式曝光機之光學顯微鏡或影像 感應器與機構來調整待待曝光物件50與智慧光罩120之XY平面相對位置以完成對位程序,並使用曝光機或類似機構調整製程基板平面與智慧光罩120平面之Z方向間距至最佳曝光位置,以完成曝光前動作。其後再透過電腦系統10及控制軟體所提供的可視化圖形介面12針對每一個micro LED 122進行點燈與點亮時間控制以達期望之曝光效果與曝光圖案。單一/單位區域的micro LED 122點亮處即為感光材料51的被曝光區域511;未經單一/單位區域的micro LED 122點亮處(暗處)即為感光材料51的未曝光區域512。所有micro LED 122之亮與暗組成之曝光圖案與實際待執行曝光製程(例如黃光微影製程)之圖形尺寸可例如為1比1。 Specifically, the exposure device 100 described in this embodiment can use the smart mask 120 to replace or use the traditional mask in conjunction with the exposure process, and achieve the requirement of whether the photosensitive material in a specific area is exposed or not by using the brightness and darkness of the light-emitting diode. When performing exposure by the exposure device 100, the smart mask 120 can be first placed on the mask clamping part 140 (that is, the original mask position of the common alignment exposure machine), for example, by fixing the smart mask 120 through a vacuum suction groove mechanism. The object 50 to be exposed is fixed by the carrying area 112 of the carrying platform 110 for fixing the mask and its fixing mechanism (for example, a vacuum suction groove) in the original fixed substrate method of the common exposure machine. The luminous surface of the smart mask 120 faces the side of the object to be exposed 50 (e.g., a process substrate) where a photosensitive material 51 is disposed, wherein the photosensitive material 51 is disposed on a substrate 52 of the object to be exposed 50, and the photosensitive material 51 may be, for example, a photoresist or a photosensitive polymer material, but the present invention is not limited thereto. Generally speaking, the photosensitive material 51 of the object to be exposed 50 faces upward, that is, the luminous surface of the smart mask 120 faces downward. This exposure method can use an optical microscope or an image sensor and a mechanism of a common alignment exposure machine to adjust the relative position of the XY plane of the object to be exposed 50 and the smart mask 120 to complete the alignment procedure, and use an exposure machine or a similar mechanism to adjust the Z-direction distance between the process substrate plane and the smart mask 120 plane to the optimal exposure position to complete the pre-exposure action. Then, the lighting and lighting time of each micro LED 122 are controlled through the computer system 10 and the visual graphic interface 12 provided by the control software to achieve the desired exposure effect and exposure pattern. The illuminated area of the single/unit area of the micro LED 122 is the exposed area 511 of the photosensitive material 51; the unlit area of the micro LED 122 (dark area) is the unexposed area 512 of the photosensitive material 51. The exposure pattern composed of the light and dark of all micro LEDs 122 can be 1:1 with the pattern size of the actual exposure process to be performed (such as yellow light lithography process).

相對於一張傳統光罩只提供一種圖形,且費用高昂,本揭露所提出的創新曝光設備100及其所實施之曝光方式可以針對各種不同曝光圖案需求,僅需通過重新設定電腦系統10的可視化圖形介面12,即可使智慧光罩120中的micro LED 122陣列形成需求的曝光圖案,因此可多樣多次地重覆使用,大幅降低製程成本。此外,由於曝光設備100是利用電腦系統10及其控制軟體來控制單顆或多顆微micro LED 122即時形成特定曝光圖案,因此不需等候委託製作光罩時間,大幅減少研發之時間成本。 Compared to a traditional mask that only provides one pattern and is expensive, the innovative exposure device 100 and the exposure method implemented by the present disclosure can meet various exposure pattern requirements. Only by resetting the visual graphics interface 12 of the computer system 10, the micro LED 122 array in the smart mask 120 can form the required exposure pattern, so it can be reused multiple times, greatly reducing the process cost. In addition, since the exposure device 100 uses the computer system 10 and its control software to control a single or multiple micro LEDs 122 to form a specific exposure pattern in real time, there is no need to wait for the commissioned mask production time, which greatly reduces the time cost of research and development.

於此附帶一提的是,在本揭露實施例所述的智慧光罩並非是類似於傳統光罩般,僅是用於作為光源遮蔽的用途,而是可以視為取代原本曝光源與光罩功能(或可視為曝光源和傳統光罩的整合),並且可以搭配傳統對位式曝光機使用,藉以利用曝光機之機構進行對位與部份曝光參數調整。除此之外,本揭露所提出的曝光設備100及其智慧光罩120可以提供製程執行者得依據同一製造流程中的不同製程的關鍵尺寸來選擇使用智慧光罩120或傳統光罩,可於連續使用單一曝光方式亦可交錯使用。由於傳統光罩可實現較細的線寬設 計,因此兩者之搭配使用可以提高製程選擇的靈活性,藉以優化製程,故具有結合的價值與效益。 It is worth mentioning here that the smart mask described in the disclosed embodiment is not similar to the traditional mask, which is only used for light source shielding, but can be regarded as replacing the original exposure source and mask function (or can be regarded as the integration of the exposure source and the traditional mask), and can be used in conjunction with the traditional alignment exposure machine, so as to use the mechanism of the exposure machine to adjust the alignment and some exposure parameters. In addition, the exposure equipment 100 and its smart mask 120 proposed in the disclosure can provide the process executor with the choice of using the smart mask 120 or the traditional mask according to the key dimensions of different processes in the same manufacturing process, and can be used in a continuous single exposure mode or staggered. Since the traditional mask can realize a finer line width design, the combination of the two can improve the flexibility of process selection, thereby optimizing the process, so it has the value and benefit of combination.

底下以圖2A至圖2D實施例來進一步說明智慧光罩120的應用範例。其中,圖2A和圖2B是本發明一些實施例的可調整圖案的智慧光罩的示意圖;圖2C和圖2D是本發明一些實施例的micro LED的示意圖。 The following uses the embodiments of Figures 2A to 2D to further illustrate the application examples of the smart light mask 120. Figures 2A and 2B are schematic diagrams of smart light masks with adjustable patterns in some embodiments of the present invention; Figures 2C and 2D are schematic diagrams of micro LEDs in some embodiments of the present invention.

請同時參照圖2A和圖2B,其中圖2A為智慧光罩220的側視圖實施例,圖2B為智慧光罩220的俯視圖實施例。在一些實施例中,由多個以陣列排列micro LED 222所構成的微型發光二極體陣列222a可視為智慧光罩220的主要部件,所述智慧光罩220還包括底板221以及保護層223。微型發光二極體陣列222a是直接或間接被安裝於底板221上。保護層223覆蓋於所述多個micro LED 222的其中之至少一或多個上,在圖式中是繪示為智慧光罩220之發光面最外層由保護層223全部覆蓋作為範例來說明,但本發明不僅限於此。此外,在一些實施例中,智慧光罩220還可包括光學調整層,或是保護層223本身帶有光學調整的作用。 Please refer to FIG. 2A and FIG. 2B simultaneously, where FIG. 2A is a side view embodiment of the smart light mask 220, and FIG. 2B is a top view embodiment of the smart light mask 220. In some embodiments, a micro-LED array 222a composed of a plurality of micro LEDs 222 arranged in an array can be regarded as a main component of the smart light mask 220, and the smart light mask 220 further includes a base plate 221 and a protective layer 223. The micro-LED array 222a is directly or indirectly mounted on the base plate 221. The protective layer 223 covers at least one or more of the plurality of micro LEDs 222. In the figure, the outermost layer of the light-emitting surface of the smart light cover 220 is completely covered by the protective layer 223 as an example, but the present invention is not limited to this. In addition, in some embodiments, the smart light cover 220 may also include an optical adjustment layer, or the protective layer 223 itself has an optical adjustment function.

在一些實施例中,micro LED 222可選用微米尺寸之紫外光LED晶粒來組成微型發光二極體陣列222a,其中micro LED 222之平面尺寸可例如0.1微米至100微米之間,特別是可例如介於5微米至20微米之間。在一些實際應用中,micro LED 222之平面尺寸可例如為0.1微米至20微米之間。此外,micro LED 222的發光波長範圍可例如在200奈米至450奈米之間,在一些應用中,micro LED 222的發光波長範圍可例如是在200奈米至400奈米之間。 In some embodiments, the micro LED 222 may be composed of a micro-light-emitting diode array 222a using micron-sized ultraviolet LED grains, wherein the planar size of the micro LED 222 may be, for example, between 0.1 microns and 100 microns, and in particular, between 5 microns and 20 microns. In some practical applications, the planar size of the micro LED 222 may be, for example, between 0.1 microns and 20 microns. In addition, the emission wavelength range of the micro LED 222 may be, for example, between 200 nanometers and 450 nanometers. In some applications, the emission wavelength range of the micro LED 222 may be, for example, between 200 nanometers and 400 nanometers.

在一些實施例中,micro LED 222可選用覆晶型(Flip-chip type)與垂直型(vertical type)的微型LED晶粒來實現,兩者之製造流程及結構配置不同。舉例來說,覆晶型的micro LED 222包括發光部和兩電極,其中所述兩電極會配置在相對發光部的同一側。垂直型的micro LED 222同樣包括發光部和兩電 極,其與覆晶型的差異在於垂直式之兩電極分布於發光部之上下兩側。一般而言,垂直型的micro LED 222可達較高解析度需求。 In some embodiments, micro LED 222 can be realized by using flip-chip type and vertical type micro LED chips, which have different manufacturing processes and structural configurations. For example, the flip-chip type micro LED 222 includes a light-emitting portion and two electrodes, wherein the two electrodes are arranged on the same side of the light-emitting portion. The vertical type micro LED 222 also includes a light-emitting portion and two electrodes, and the difference between it and the flip-chip type is that the two electrodes of the vertical type are distributed on the upper and lower sides of the light-emitting portion. Generally speaking, the vertical type micro LED 222 can achieve higher resolution requirements.

具體而言,智慧光罩220的尺寸可與一般適用於傳統對位式曝光機使用之玻璃或石英光罩之尺寸相近,底板221材料可能為玻璃、石英、塑膠、矽、碳化矽、其本體厚度可例如介於500微米與1公分之間。智慧光罩220的最大可發光面積(即,微型發光二極體陣列222a的面積)可例如介於100平方毫米(mm2)至52900平方毫米之間,在一些實際應用中,其可介於625平方毫米至52900平方毫米之間,約略相當於邊長為1吋至9吋之正方形。智慧光罩220的整體尺寸可設計為略大於待曝光物件(如50)的大小,實際最大可發光面積可設計為約等於或小於待曝光物件的大小。 Specifically, the size of the smart mask 220 can be similar to that of glass or quartz masks generally used in conventional alignment exposure machines. The base plate 221 may be made of glass, quartz, plastic, silicon, or silicon carbide, and its thickness may be, for example, between 500 microns and 1 centimeter. The maximum luminous area of the smart mask 220 (i.e., the area of the micro-LED array 222a) may be, for example, between 100 square millimeters (mm 2 ) and 52,900 square millimeters. In some practical applications, it may be between 625 square millimeters and 52,900 square millimeters, which is roughly equivalent to a square with a side length of 1 inch to 9 inches. The overall size of the smart mask 220 can be designed to be slightly larger than the size of the object to be exposed (such as 50), and the actual maximum luminous area can be designed to be approximately equal to or smaller than the size of the object to be exposed.

換言之,智慧光罩220可被設計為尺寸大小與厚度皆類似傳統光罩,因此可直接設置於傳統對位式曝光機之光罩固定位置,並直接取代原曝光光源與光罩功能。由微型發光二極體陣列222a之多個被指定micro LED 222進行自發光,組成曝光圖案,達成直接曝光目的。 In other words, the smart mask 220 can be designed to be similar in size and thickness to a traditional mask, so it can be directly set in the mask fixing position of a traditional alignment exposure machine and directly replace the original exposure light source and mask function. The multiple designated micro LEDs 222 of the micro-LED array 222a emit light by themselves to form an exposure pattern, thereby achieving the purpose of direct exposure.

底下以圖3至圖5來更具體的說明智慧光罩220經控制而形成曝光圖案的過程,其中圖3是本發明一些實施例的可調整圖案的智慧光罩的曝光圖案示意圖;圖4A至5B是本發明一些實施例的智慧光罩的局部圖案示意圖。 The following is a more detailed description of the process of controlling the smart mask 220 to form an exposure pattern, with Figures 3 to 5, wherein Figure 3 is a schematic diagram of the exposure pattern of a smart mask with an adjustable pattern in some embodiments of the present invention; Figures 4A to 5B are schematic diagrams of partial patterns of the smart mask in some embodiments of the present invention.

請先參照圖3,在執行曝光製程前,使用者可先使用電腦系統來定義智慧光罩的最小解析單位,以使所述micro LED陣列畫分為多個曝光單元區域310,其中各個曝光單元區域可包括以x*y陣列排列的多個所述micro LED,其中x、y值為可由使用者自行定義的自然數。點狀方格處為預期被曝光之區域EA,空白方格處為預期不被曝光之區域NEA。尺寸P為本實施例需要之最小線寬。後續圖4A至圖4C將以3x3個曝光單元區域310(即最小線寬單位)組成之區域300p說明此區域對應之Micro LED曝光模式。 Please refer to Figure 3. Before executing the exposure process, the user can use the computer system to define the minimum resolution unit of the smart mask so that the micro LED array is divided into multiple exposure unit areas 310, where each exposure unit area may include multiple micro LEDs arranged in an x*y array, where the x and y values are natural numbers that can be defined by the user. The dotted squares are the expected exposed area EA, and the blank squares are the expected non-exposed area NEA. The size P is the minimum line width required for this embodiment. The subsequent Figures 4A to 4C will use the area 300p composed of 3x3 exposure unit areas 310 (i.e., the minimum line width unit) to illustrate the Micro LED exposure mode corresponding to this area.

在一些實施例中,若單一個micro LED尺寸略小於實施例需求之最小線寬,單一個尺寸為L1之micro LED 322將負責一個曝光單元區域410(即,需求最小線寬單位P1xP1之區域)之曝光行為,如圖4A所示。兩兩micro LED 422之間存在一個微小間距D1。在一些實施例中,所述間距D1可例如介於0.01微米至20微米之間,特別是可例如介於1微米至4微米之間,藉以符合曝光製程的線寬需求。在一些實際應用中,最小線寬單位P1可設計為大於或等於1微米,而兩相鄰micro LED 422之間的間距D1小於或等於1微米。 In some embodiments, if the size of a single micro LED is slightly smaller than the minimum line width required by the embodiment, a single micro LED 322 with a size of L1 will be responsible for the exposure behavior of an exposure unit area 410 (i.e., the area requiring the minimum line width unit P1xP1), as shown in FIG. 4A. There is a small spacing D1 between two micro LEDs 422. In some embodiments, the spacing D1 may be, for example, between 0.01 microns and 20 microns, and in particular, may be, for example, between 1 micron and 4 microns, so as to meet the line width requirements of the exposure process. In some practical applications, the minimum line width unit P1 may be designed to be greater than or equal to 1 micron, and the spacing D1 between two adjacent micro LEDs 422 is less than or equal to 1 micron.

請接著參照圖4B,如欲達成圖3實施例之局部區域300p之曝光圖案,則預計被曝光之曝光單元區域410內之micro LED 422將被驅動點亮(標示為ON);不被曝光之曝光單元區域410內之micro LED 422將維持為暗點(標示為OFF)。所有點亮之micro LED 422將形成預期曝光圖案。就所有需要被點亮之micro LED而言,點亮次序不限定為單顆依序點亮、多顆分批次點亮或一次全部點亮。 Please refer to FIG. 4B. If the exposure pattern of the local area 300p of the embodiment of FIG. 3 is to be achieved, the micro LED 422 in the exposure unit area 410 to be exposed is expected to be driven to light up (marked as ON); the micro LED 422 in the exposure unit area 410 not to be exposed will remain as a dark spot (marked as OFF). All the lit micro LEDs 422 will form the expected exposure pattern. For all the micro LEDs that need to be lit, the lighting order is not limited to lighting up a single micro LED in sequence, lighting up multiple micro LEDs in batches, or lighting up all at once.

在一些實施例中,若單一個micro LED尺寸遠小於實施例需求之最小線寬,意即一個需求的曝光單元區域410內包含有多個micro LED,如圖4C所示。如欲達成圖3實施例之區域300p之曝光圖案,一個曝光單元區域510(即,需求最小線寬單位P2xP2)之曝光行為將由多個尺寸L2之micro LED 522負責,兩兩micro LED之間存在一個微小間距D2。在一些實施例中,所述間距D2可例如介於0.01微米至20微米之間,特別是可例如介於1微米至4微米之間,藉以符合曝光製程的線寬需求。在一些實際應用中,最小線寬單位P2小於或等於1微米,而兩相鄰micro LED 522之間的間距D2小於或等於1微米。此實施例中為每一曝光單元區域510包括4x4個micro LED為例,預計被曝光之曝光單元區域510內之micro LED陣列522a陣列將被驅動點亮(標示為ON);不被曝光之曝光單元區域410內之micro LED陣列522a將維持為暗點(標示為OFF)。所有 點亮之micro LED 522將形成預期曝光圖案。就所有需要被點亮之micro LED而言,點亮次序不限定為單顆依序點亮、多顆分批次點亮或一次全部點亮。 In some embodiments, if the size of a single micro LED is much smaller than the minimum line width required by the embodiment, that is, a required exposure unit area 410 includes multiple micro LEDs, as shown in FIG. 4C. To achieve the exposure pattern of area 300p in the embodiment of FIG. 3, the exposure behavior of an exposure unit area 510 (i.e., the required minimum line width unit P2xP2) will be responsible for multiple micro LEDs 522 of size L2, and there is a small spacing D2 between two micro LEDs. In some embodiments, the spacing D2 may be, for example, between 0.01 microns and 20 microns, and in particular, may be, for example, between 1 micron and 4 microns, so as to meet the line width requirements of the exposure process. In some practical applications, the minimum line width unit P2 is less than or equal to 1 micron, and the spacing D2 between two adjacent micro LEDs 522 is less than or equal to 1 micron. In this embodiment, each exposure unit area 510 includes 4x4 micro LEDs as an example. It is expected that the micro LED array 522a in the exposure unit area 510 to be exposed will be driven to light up (marked as ON); the micro LED array 522a in the exposure unit area 410 not to be exposed will remain as a dark spot (marked as OFF). All the lit micro LEDs 522 will form the expected exposure pattern. For all micro LEDs that need to be lit, the lighting order is not limited to lighting a single LED in sequence, lighting multiple LEDs in batches, or lighting all at once.

在圖4C實施例中,此類超高解析度之micro LED陣列可能因為先天的局部缺陷而存在些許成為永久暗點之micro LED。為了補償該些暗點可能對曝光製程所造成的影響,本揭露另外提出一種暗點補償的控制方式以解決上述問題。同樣以圖3實施例之區域300p之曝光圖案為例,圖5繪示了有暗點發生之情形下的曝光圖案示意圖。 In the embodiment of FIG. 4C, such an ultra-high resolution micro LED array may have some micro LEDs that become permanent dark spots due to inherent local defects. In order to compensate for the impact of these dark spots on the exposure process, the present disclosure also proposes a control method for dark spot compensation to solve the above problem. Taking the exposure pattern of area 300p of the embodiment of FIG. 3 as an example, FIG. 5 shows a schematic diagram of the exposure pattern when dark spots occur.

請參照圖5,接續前述圖4C實施例之曝光單元區域510設置範例,即每一曝光單元區域510包括4x4個micro LED,預期被曝光之區域EA內的micro LED陣列522a將被驅動點亮(標示為ON);預期不被曝光之區域NEA內的micro LED陣列522a將維持為暗點(標示為OFF),其中不論預期被曝光之區域EA或預期不被曝光之區域NEA內皆可能存在無法正常工作的micro LED,例如因損壞的micro LED所造成的永久暗點(如522b),或是因micro LED長時間工作老化,造成發光強度衰減的現象。底下以損壞的永久暗點(標示為永久OFF)作為範例來說明,但本領域具有通常知識者在參酌以下說明後可理解,本實施例所述的補償控制是可應用於補償各類無法正常工作的micro LED,並不僅限於損壞的永久暗點。 Please refer to FIG. 5 , which continues the example of the exposure unit area 510 configuration of the embodiment of FIG. 4C , that is, each exposure unit area 510 includes 4x4 micro LEDs, and the micro LED array 522a in the area EA expected to be exposed will be driven to light up (marked as ON); the micro LED array 522a in the area NEA not expected to be exposed will remain as a dark spot (marked as OFF), wherein both the area EA expected to be exposed and the area NEA not expected to be exposed may contain micro LEDs that cannot work normally, such as permanent dark spots (such as 522b) caused by damaged micro LEDs, or aging of the micro LEDs due to long-term operation, resulting in a phenomenon of light intensity attenuation. The following uses a damaged permanent dark spot (marked as permanent OFF) as an example for explanation, but those with ordinary knowledge in the field can understand after referring to the following description that the compensation control described in this embodiment can be applied to compensate for various types of micro LEDs that cannot work normally, and is not limited to damaged permanent dark spots.

在一些實施例中,當暗點被偵測到時,智慧光罩可針對此永久暗點周圍的micro LED 522a調整發光狀態之方式來進行補償,例如調整發光亮度(例如是調整個別micro LED的發光強度或曝光單元區域內之所有micro LED的總發光量)或者直接增加對應的曝光單元區域內之預計發光時間,進而使各個曝光單元區域能夠維持均勻且等效的曝光效果,維持製程之穩定性,本發明不限制補償之演算方法。 In some embodiments, when a dark spot is detected, the smart mask can compensate for it by adjusting the luminous state of the micro LED 522a around the permanent dark spot, such as adjusting the luminous brightness (for example, adjusting the luminous intensity of individual micro LEDs or the total luminous amount of all micro LEDs in the exposure unit area) or directly increasing the expected luminous time in the corresponding exposure unit area, so that each exposure unit area can maintain a uniform and equivalent exposure effect and maintain the stability of the process. The present invention does not limit the compensation calculation method.

換言之,當曝光單元區域中有z個micro LED處於無法正常工作狀態時,該曝光單元區域中其餘處於正常工作狀態的micro LED中至少其中之一的發光狀態會被調整以補償所述z個無法正常工作的micro LED,其中z為自然數,且z<x*y。 In other words, when there are z micro LEDs in the exposure unit area that are not working properly, the light emission state of at least one of the remaining micro LEDs in the exposure unit area that are in normal working state will be adjusted to compensate for the z micro LEDs that are not working properly, where z is a natural number and z<x*y.

底下先說明調整發光亮度的補償方式。先以具有一個壞點為永久暗點503的曝光單元區域520為例來說明,該永久暗點503佔曝光單元區域520面積之1/16。當智慧光罩偵測到暗點503時(可通過檢測器進行偵測),智慧光罩可以選取暗點503周邊的一或多個micro LED並提高其發光亮度,以使曝光單元區域520的整體亮度可維持在沒有暗點時的發光亮度。再以曝光單元區域530為例,曝光單元區域530內有四個壞點為永久暗點504-507,佔總最小線寬單位之4/16。當智慧光罩偵測到暗點504-507時,智慧光罩可以選取暗點504-507周邊的一或多個micro LED並提高其發光亮度,以使曝光單元區域530的整體亮度可維持在沒有暗點時的發光亮度,並且實質上與曝光單元區域520維持有相同/近似的亮度。 The following is an explanation of the compensation method for adjusting the luminous brightness. First, take the exposure unit area 520 with a bad spot as a permanent dark spot 503 as an example. The permanent dark spot 503 occupies 1/16 of the area of the exposure unit area 520. When the smart mask detects the dark spot 503 (which can be detected by a detector), the smart mask can select one or more micro LEDs around the dark spot 503 and increase their luminous brightness so that the overall brightness of the exposure unit area 520 can be maintained at the luminous brightness when there is no dark spot. Taking the exposure unit area 530 as an example, there are four bad spots in the exposure unit area 530 as permanent dark spots 504-507, which occupy 4/16 of the total minimum line width unit. When the smart mask detects a dark spot 504-507, the smart mask can select one or more micro LEDs around the dark spot 504-507 and increase their luminance, so that the overall brightness of the exposure unit area 530 can be maintained at the luminance when there is no dark spot, and substantially maintain the same/similar brightness as the exposure unit area 520.

換言之,在一個所有micro LED皆處於正常工作狀態的曝光單元區域中,其micro LED陣列中的每一micro LED具有第一亮度的情況下,若是該曝光單元區域中產生了一個或多個暗點,則智慧光罩會將該曝光單元區域中其餘處於正常工作狀態的micro LED中至少其中之一的發光亮度調整為大於所述第一亮度的第二亮度。所述調整發光亮度的控制可以例如是基於暗點數量將其餘正常工作的micro LED的電流值提升至設定的補償電流值,或是通過檢測曝光單元區域520亮度決定其餘正常工作的micro LED的補償電流值,本發明不以此為限。 In other words, in an exposure unit area where all micro LEDs are in a normal working state, each micro LED in the micro LED array has a first brightness. If one or more dark spots are generated in the exposure unit area, the smart mask will adjust the luminous brightness of at least one of the remaining micro LEDs in the exposure unit area that are in a normal working state to a second brightness greater than the first brightness. The control of adjusting the luminous brightness can be, for example, based on the number of dark spots, increasing the current value of the remaining micro LEDs that are in a normal working state to a set compensation current value, or determining the compensation current value of the remaining micro LEDs that are in a normal working state by detecting the brightness of the exposure unit area 520, but the present invention is not limited thereto.

底下接著說明調整發光時間的補償方式。先以具有一個壞點為永久暗點503的曝光單元區域520為例來說明,該永久暗點503佔曝光單元區域 520面積之1/16。當智慧光罩偵測到暗點503時,智慧光罩可以選取暗點503周邊的一或多個micro LED並延長其發光期間,以使曝光單元區域520的曝光量(luminous exposure,即一定期間內每單位面積的光通量,lx*s)可維持與沒有暗點時相同。舉例來說,智慧光罩可將曝光單元區域520內其餘正常工作的15個micro LED的點亮時間調整為原先的16/15倍,使得曝光單元區域520的曝光量可維持相同。再以曝光單元區域530為例,曝光單元區域530內有四個壞點為永久暗點504-507,佔總最小線寬單位之4/16。當智慧光罩偵測到暗點504-507時,智慧光罩可以選取暗點504-507周邊的一或多個micro LED並延長其發光期間,以使曝光單元區域530的曝光量可維持與沒有暗點時相同。舉例來說,智慧光罩可將曝光單元區域530內其餘正常工作的15個micro LED的點亮時間調整為原先的16/12倍,使得曝光單元區域530的曝光量可維持相同,並且實質上與曝光單元區域520維持有相同/近似的亮度。 Next, the compensation method for adjusting the luminous time is described. First, an exposure unit area 520 having a bad spot as a permanent dark spot 503 is used as an example. The permanent dark spot 503 occupies 1/16 of the area of the exposure unit area 520. When the smart mask detects the dark spot 503, the smart mask can select one or more micro LEDs around the dark spot 503 and extend their luminous period so that the exposure (luminous exposure, i.e., the luminous flux per unit area in a certain period of time, lx*s) of the exposure unit area 520 can be maintained the same as when there is no dark spot. For example, the smart mask can adjust the lighting time of the remaining 15 micro LEDs in the exposure unit area 520 that are working normally to 16/15 times the original time, so that the exposure of the exposure unit area 520 can be maintained the same. Taking the exposure unit area 530 as an example, there are four bad spots in the exposure unit area 530, which are permanent dark spots 504-507, accounting for 4/16 of the total minimum line width unit. When the smart mask detects the dark spots 504-507, the smart mask can select one or more micro LEDs around the dark spots 504-507 and extend their light-emitting period so that the exposure of the exposure unit area 530 can be maintained the same as when there is no dark spot. For example, the smart mask can adjust the lighting time of the remaining 15 micro LEDs in the exposure unit area 530 that are working normally to 16/12 times the original, so that the exposure of the exposure unit area 530 can be maintained the same, and substantially maintain the same/similar brightness as the exposure unit area 520.

換言之,在此補償方式下,當曝光單元區域中有z個micro LED處於無法正常工作狀態時,其餘處於正常工作狀態的micro LED中至少其中之一的點亮時間會被調整為大於原先設定期間(或稱第一期間)的第二期間。在一些實施例中,第一期間和第二期間可符合以下函數關係:

Figure 109131004-A0305-02-0022-2
In other words, under this compensation method, when z micro LEDs in the exposure unit area are not working properly, the lighting time of at least one of the remaining micro LEDs in normal working state will be adjusted to a second period that is greater than the original set period (or first period). In some embodiments, the first period and the second period may meet the following functional relationship:
Figure 109131004-A0305-02-0022-2

其中,T1為所述第一期間,T2為所述第二期間,並且n為用以補償環境影響或製程偏移的常數設定值。 Wherein, T1 is the first period, T2 is the second period, and n is a constant setting value used to compensate for environmental influences or process deviations.

經過上述的補償後,各曝光單元區域中的micro LED陣列(無論是否有暗點)同樣可形成預期曝光圖案。就所有需要被點亮之micro LED而言,點亮次序不限定為單顆依序點亮、多顆分批次點亮或一次全部點亮。此外,在一些實施例中,如圖4C和圖5所示,由於尺寸L2與間距D2皆小於曝光製 程能力之最小線寬P2,因此永久性暗點(如503-507)與兩兩micro LED之間距將不影響整體曝光圖案之連續性。 After the above compensation, the micro LED array in each exposure unit area (regardless of whether there are dark spots) can also form the expected exposure pattern. For all micro LEDs that need to be lit, the lighting order is not limited to lighting a single one in sequence, lighting multiple ones in batches, or lighting all at once. In addition, in some embodiments, as shown in Figures 4C and 5, since the size L2 and the spacing D2 are both smaller than the minimum line width P2 of the exposure process capability, the permanent dark spots (such as 503-507) and the spacing between two micro LEDs will not affect the continuity of the overall exposure pattern.

請再參照圖2A和圖2B,智慧光罩220可更包括多個對位標記224,所述對位標記224是用以在製程中輔助曝光機構進行對位操作之用。在一些實施例中,對位標記224可以利用不透可見光之金屬薄膜來實施。在另一些實施例中,對位標記224也可搭配micro LED以在待曝光物件上產生新的對位標記。 Please refer to FIG. 2A and FIG. 2B again. The smart mask 220 may further include a plurality of alignment marks 224, which are used to assist the exposure mechanism in performing alignment operations during the manufacturing process. In some embodiments, the alignment mark 224 may be implemented using a metal film that is opaque to visible light. In other embodiments, the alignment mark 224 may also be combined with a micro LED to generate a new alignment mark on the object to be exposed.

在搭配使用micro LED的對位標記224的實施例中,用以作為曝光製程用途的micro LED 222(底下簡稱為曝光micro LED 222)可例如是設置在底板221的中心區域CTA,並且用以作為產生對位標記用途的micro LED(底下簡稱為對位micro LED)可例如是設置在底板221的外圍區域(即,底板221上除了中心區域CTA以外之區域),圖式是以設置在對位標記224的區域之內/周邊為例,但本發明不以此為限。在一些實施例中,對位micro LED也可以設置在曝光micro LED 222的陣列之中,或是曝光micro LED 222中之部分在定位期間作為對位micro LED控制。換言之,對位micro LED可位於曝光Micro LED陣列222a之外側亦可設置於陣列222a內側,只要是對位micro LED的位置可照射至待曝光物件50之曝光區域內即可。 In the embodiment of using the alignment mark 224 with the micro LED, the micro LED 222 used for the exposure process (hereinafter referred to as the exposure micro LED 222) can be, for example, set in the central area CTA of the bottom plate 221, and the micro LED used for generating the alignment mark (hereinafter referred to as the alignment micro LED) can be, for example, set in the peripheral area of the bottom plate 221 (i.e., the area on the bottom plate 221 other than the central area CTA). The figure takes the area set inside/around the alignment mark 224 as an example, but the present invention is not limited thereto. In some embodiments, the alignment micro LED can also be set in the array of the exposure micro LED 222, or a part of the exposure micro LED 222 can be used as the alignment micro LED control during the positioning period. In other words, the alignment micro LED can be located outside the exposure Micro LED array 222a or inside the array 222a, as long as the alignment micro LED is positioned so as to illuminate the exposure area of the object 50 to be exposed.

底下以圖6和圖7來進一步說明對位micro LED的設置實施例,其中圖6是本發明另一些實施例的可調整圖案的智慧光罩的示意圖;圖7是依照圖6的一些實施例的對位標記的示意圖。 The following is a further explanation of the micro LED alignment configuration embodiments with reference to FIG6 and FIG7 , wherein FIG6 is a schematic diagram of an adjustable pattern smart mask of other embodiments of the present invention; FIG7 is a schematic diagram of alignment marks of some embodiments according to FIG6 .

請同時參照圖6和圖7,本實施例與前述圖2實施例大致相同,其差異之處在於智慧光罩620的對位標記624區域內224中除了設置有對位用的記號之外,還包括有輔助形成基板對位標記的對位micro LED。在本實施例中,對位標記624內以包括數種對位圖案作為範例,例如方形、十字形等,但本發 明不限制對位記號之形狀,本領域具有通常知識者可基於習知黃光微影製程知識設計之在對位標記624區域中包括金屬薄膜組成之對位圖案6241和6242與由micro LED 622’組成之對位圖案6243和6244。對位標記624區域中的空白範圍6245例如是指不設置任何不透可見光或紅外光之記號或結構的區域,空白範圍6245可例如只存在底板(如221)、保護層(如223)與可見光與紅外光可穿透之透明導電薄膜材料導線,如銦錫氧化物材料(Indium Tin Oxide,ITO)、氧化鋅摻鋁材料(Aluminum-doped Zinc Oxide,AZO)等。透過對位圖案6241至6244之混用設計,讓智慧光罩620在與傳統常見對位式曝光機搭配執行曝光製程時,可以混合搭配傳統光罩完成多個道數之多層堆疊微結構元件。以下舉例若第一道黃光微影製程根據使用需求評估而採用智慧光罩620進行曝光,則可以點亮組成對位圖案6243的對位micro LED 622’(例如,組成十字圖案的9個對位micro LED 622’),以產生第一組對位記號供後續製程使用。換言之,在經過第一道曝光製程後,待曝光物件50上會具有一與對位圖案6243對應的對位標記,後續製程中曝光設備會基於此對位標記進行對位操作。若待曝光物件50已經歷過至少一道的黃光微影製程,待曝光物件50上已具備後續製程所需之對位標記(例如與對位圖案6242對應的對位標記),則在執行新曝光製程時曝光設備可以基於智慧光罩620上的不透光金屬薄膜對位圖案6242和待曝光物件50上的對位標記進行對位操作。 Please refer to FIG. 6 and FIG. 7 at the same time. This embodiment is substantially the same as the embodiment of FIG. 2 above. The difference is that in addition to the alignment mark set in the alignment mark area 624 of the smart mask 620, there is also an alignment micro LED that assists in forming the substrate alignment mark. In this embodiment, the alignment mark 624 includes several alignment patterns as an example, such as a square, a cross, etc., but the present invention does not limit the shape of the alignment mark. A person with ordinary knowledge in the art can design the alignment patterns 6241 and 6242 composed of metal thin films and the alignment patterns 6243 and 6244 composed of micro LEDs 622' in the alignment mark area 624 based on the knowledge of the yellow light lithography process. The blank area 6245 in the alignment mark 624 area, for example, refers to an area where no mark or structure that is opaque to visible light or infrared light is set. The blank area 6245 may, for example, only have a base plate (such as 221), a protective layer (such as 223), and a transparent conductive film material wire that is transparent to visible light and infrared light, such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), etc. Through the mixed design of alignment patterns 6241 to 6244, the smart mask 620 can be mixed with traditional masks to complete multiple-pass multi-layer stacked microstructure components when performing an exposure process with a conventional common alignment exposure machine. For example, if the first yellow light lithography process uses the smart mask 620 for exposure according to the use demand assessment, the alignment micro LEDs 622' (for example, 9 alignment micro LEDs 622' forming a cross pattern) that form the alignment pattern 6243 can be lit to generate a first set of alignment marks for use in subsequent processes. In other words, after the first exposure process, the object to be exposed 50 will have an alignment mark corresponding to the alignment pattern 6243, and the exposure equipment in the subsequent process will perform alignment operations based on this alignment mark. If the object 50 to be exposed has undergone at least one yellow light lithography process, and the object 50 to be exposed has the alignment mark required for the subsequent process (for example, the alignment mark corresponding to the alignment pattern 6242), then when executing a new exposure process, the exposure equipment can perform an alignment operation based on the opaque metal film alignment pattern 6242 on the smart mask 620 and the alignment mark on the object 50 to be exposed.

由於待曝光物件50在經過多道製程之後,其上之對位標記可能會在各製程中受到影響而變得模糊,進而造成對位精確度降低或產生對位錯誤/失敗的情形,在一些實施例中,智慧光罩620可通過對位micro LED 622’以在待曝光物件50上產生新的對位標記給後續製程使用,進而解決上述對位精確度降低或對位失敗的問題。同樣以圖7為例,在待曝光物件50上已具有與對位圖案6241對應的對位標記的情況下,在以智慧光罩620進行曝光時,曝光設備會 先基於對位標記624中的對位圖案6241和待曝光物件50上的對位標記進行對位操作。在完成對位後,智慧光罩620會進行曝光,並且點亮組成對位圖案的對位micro LED 622’(例如,點亮組成十字形對位圖案6243的9個對位micro LED 622’),以在待曝光物件50上產生新的對位圖案。此新的對位圖案即可作為待曝光物件50新的對位標記以供後續製程對位之用。 After the object 50 to be exposed has gone through multiple processes, the alignment mark on it may be affected in each process and become blurred, thereby causing the alignment accuracy to decrease or causing alignment errors/failures. In some embodiments, the smart mask 620 can generate new alignment marks on the object 50 to be exposed by aligning the micro LED 622' for use in subsequent processes, thereby solving the above-mentioned problems of reduced alignment accuracy or alignment failures. Taking FIG. 7 as an example, when the object 50 to be exposed already has an alignment mark corresponding to the alignment pattern 6241, when the smart mask 620 is used for exposure, the exposure equipment will first perform an alignment operation based on the alignment pattern 6241 in the alignment mark 624 and the alignment mark on the object 50 to be exposed. After the alignment is completed, the smart mask 620 is exposed and the alignment micro LEDs 622' that form the alignment pattern are lit up (for example, 9 alignment micro LEDs 622' that form the cross-shaped alignment pattern 6243 are lit up) to generate a new alignment pattern on the object to be exposed 50. This new alignment pattern can be used as a new alignment mark for the object to be exposed 50 for alignment in subsequent processes.

上述說明雖然是以在與舊有對位圖案6241不同的位置上形成新的對位圖案6243作為產生新的對位標記的實施範例(亦即新的對位圖案6243單獨作為待曝光物件50的新對位標記),但本發明不以此為限。在一些實施例中,智慧光罩620也可以在待曝光物件50之舊有對位標記範圍內/附近定義出新的對位圖案,以使待曝光物件50舊有的對位圖案和新增的對位圖案結合形成新的對位標記。舉例來說,在待曝光物件50上已具有與對位圖案6242對應的對位標記的情況下,在以智慧光罩620進行曝光時,曝光設備會先基於對位標記624中的對位圖案6242和待曝光物件50上的對位標記進行對位操作。在完成對位後,智慧光罩620會進行曝光,並且點亮組成對位圖案的對位micro LED 622’(例如,形成4個矩形對位圖案6244的16個micro LED 622’),以在待曝光物件50上產生新的對位圖案。此時待曝光物件50上舊有的矩形外框圖案(對應6242)和新定義出的4個較小的矩形圖案6244可結合形成新的反白十字形對位圖案來作為新的對位標記以供後續製程對位之用。藉由上述結合舊有對位圖案和新增的對位圖案形成新的對位標記的方式,除了可以同樣地維持後續製程對位精確度的需求,還可以有效地限制對位標記所需耗費的面積,進而提高晶圓利用率。 Although the above description is based on the example of forming a new alignment pattern 6243 at a position different from the old alignment pattern 6241 as an implementation example of generating a new alignment mark (i.e., the new alignment pattern 6243 is used alone as a new alignment mark of the object 50 to be exposed), the present invention is not limited thereto. In some embodiments, the smart mask 620 can also define a new alignment pattern within/near the old alignment mark of the object 50 to be exposed, so that the old alignment pattern of the object 50 to be exposed and the newly added alignment pattern are combined to form a new alignment mark. For example, when the object 50 to be exposed already has an alignment mark corresponding to the alignment pattern 6242, when the smart mask 620 is used for exposure, the exposure device will first perform an alignment operation based on the alignment pattern 6242 in the alignment mark 624 and the alignment mark on the object 50 to be exposed. After the alignment is completed, the smart mask 620 will be exposed and the alignment micro LEDs 622' (for example, 16 micro LEDs 622' forming four rectangular alignment patterns 6244) will be lit to generate a new alignment pattern on the object 50 to be exposed. At this time, the old rectangular frame pattern (corresponding to 6242) on the object to be exposed 50 and the newly defined four smaller rectangular patterns 6244 can be combined to form a new inverted cross-shaped alignment pattern as a new alignment mark for subsequent process alignment. By combining the old alignment pattern and the newly added alignment pattern to form a new alignment mark, in addition to maintaining the alignment accuracy requirements of the subsequent process, the area consumed by the alignment mark can be effectively limited, thereby improving wafer utilization.

圖8是本發明一些實施例的可調整圖案的智慧光罩的控制介面示意圖。請參照圖8,在本實施例中,控制軟體提供的可視化圖形介面可配置有(但不限於)以下功能:(1)可直接點選左側曝光區域內各單一micro LED之 亮暗設定(並可透過滑鼠滾輪或鍵盤暗鍵進行放大與縮小局部曝光區域);(2)一鍵設定全屏為亮(標示為“All clear”)或全屏為暗(標示為“All dark”)、負片模式(標示為“reverse color”,即一鍵轉換圖案之亮變暗與暗變亮,於選擇正型光阻與負型光阻時可直接在同一圖案切換);(3)主要參數設定功能,包含光強度(標示為“Intensity”)、曝光時間(標示為“Time”)、曝光頻率等;(4)儲存/讀取圖案與相對應知所有曝光參數設定(儲存圖案/參數標示為“Save”、“Save as”,讀取圖案標示為“Load pattern”,讀取參數標示為“Load recipe”)、執行曝光(標示為“Go Exposure”)等。 FIG8 is a schematic diagram of the control interface of the smart mask with adjustable pattern in some embodiments of the present invention. Referring to FIG8, in this embodiment, the visual graphical interface provided by the control software can be configured with (but not limited to) the following functions: (1) directly click on the brightness setting of each single micro LED in the left exposure area (and zoom in and out the local exposure area through the mouse wheel or keyboard dark key); (2) one-click setting of the whole screen to bright (marked as "All clear") or dark (marked as "All dark"), negative mode (marked as "reverse color”, that is, one-click conversion of the pattern from light to dark and from dark to light. When selecting positive photoresist and negative photoresist, the pattern can be switched directly on the same pattern); (3) main parameter setting functions, including light intensity (labeled as “Intensity”), exposure time (labeled as “Time”), exposure frequency, etc.; (4) save/read pattern and all corresponding exposure parameter settings (save pattern/parameters are labeled as “Save” and “Save as”, read pattern is labeled as “Load pattern”, read parameter is labeled as “Load recipe”), execute exposure (labeled as “Go Exposure”), etc.

除此之外,在一些實施例中,所述控制軟體亦包含每個單一micro LED之發光補償功能,意即本軟體可根據某種偵測各個micro LED之發光強度的直接或間接結果來設定每個單一micro LED應補償的程度,以達整體發光均勻性。舉例來說,本揭露實施例的智慧光罩在出廠前可透過直接或間接方式進行曝光範圍內所有micro LED之發光強度掃描,以瞭解整體曝光範圍內之發光均勻性。於補償時,控制器將預設配給較高之電流或電壓給光強度較低的micro LED,以調整該顆micro LED發光強度至整體預期平均值;而光強度較亮的micro LED則會被預設配給較低之電流或電壓,以調整該顆發光強度至整體預期平均值。另外,此處提及之補償設定亦包含提高永久暗點之周圍micro LED局部發光強度至整體預期發光強度平均值。而後針對上述補償規劃產出對應之補償設定碼,供用戶端於首次執行軟體程式時可直接輸入補償設定碼,完成針對該Micro LED陣列燈之初始補償設定。此程序用於滿足出廠前、維修後或曝光前之校正需求。 In addition, in some embodiments, the control software also includes a luminous compensation function for each single micro LED, which means that the software can set the degree of compensation for each single micro LED based on a direct or indirect result of detecting the luminous intensity of each micro LED to achieve overall luminous uniformity. For example, the smart mask of the disclosed embodiment can directly or indirectly scan the luminous intensity of all micro LEDs in the exposure range before leaving the factory to understand the luminous uniformity in the overall exposure range. During compensation, the controller will default to assign a higher current or voltage to the micro LED with lower light intensity to adjust the light intensity of the micro LED to the overall expected average value; while the micro LED with brighter light intensity will be defaulted to assign a lower current or voltage to adjust the light intensity of the micro LED to the overall expected average value. In addition, the compensation setting mentioned here also includes increasing the local light intensity of the micro LEDs around the permanent dark spot to the overall expected light intensity average value. Then, the corresponding compensation setting code is generated for the above compensation plan, so that the user can directly enter the compensation setting code when executing the software program for the first time to complete the initial compensation setting for the Micro LED array light. This procedure is used to meet calibration requirements before shipment, after maintenance, or before exposure.

在一些實施例中,電腦系統與控制軟體可透過初始量測來預設出廠前或曝光前之一顆或一個曝光單位區域內之Micro LED光強度,進行事先 補償以達曝光均一性。控制軟體亦提供一簡明介面,讓使用者可以即時選擇欲曝光的圖案與每個黃光製程之最小解析單位,即時調整曝光參數進行曝光,並可以編輯、讀取、儲存、另存任一曝光圖形設計與曝光重要參數包含:Micro LED的亮或暗、發光強度、連續發光或閃爍發光累計的時間等。 In some embodiments, the computer system and control software can preset the light intensity of a Micro LED or an exposure unit area before shipment or exposure through initial measurement, and make advance compensation to achieve exposure uniformity. The control software also provides a simple interface, allowing users to instantly select the pattern to be exposed and the minimum resolution unit of each yellow light process, and instantly adjust the exposure parameters for exposure. It can also edit, read, save, and save any exposure pattern design and important exposure parameters including: the brightness or darkness of the Micro LED, the luminous intensity, the accumulated time of continuous luminescence or flashing luminescence, etc.

圖9是本發明一些實施例的曝光方法的步驟流程圖。請參照圖9,本實施例所述的曝光方法可以搭配前述圖1至圖8實施例所述的硬體、操作及介面來實施。所述曝光方法包括以下步驟:首先,曝光設備(如100)會進行對位操作,以將智慧光罩(如120/220/620)上以陣列組成的多個第一微型發光二極體元件(如122/222/422/522/622)與待曝光物件(如50)對齊,並且使所述多個第一微型發光二極體元件的發光面(例如底板121/221上設置有第一微型發光二極體元件的一側)朝向所述待曝光物件(步驟S910)。舉例來說,曝光設備可利用影像感測器或感光耦合元件(Charged Coupled Device,CCD)來識別/辨識智慧光罩和待曝光物件上的對位標記,以取得智慧光罩和待曝光物件的位置資訊,接著基於所述位置資訊來調整智慧光罩和待曝光物件的相對位置,例如可將智慧光罩和待曝光物件上的對位標記調整為在同一軸向上相互重疊,藉以實現對齊/對位的操作。接著,智慧光罩可利用控制器(如130)發送第一控制信號至所述多個第一微型發光二極體元件,使所述多個第一微型發光二極體元件響應於所述控制信號點亮並顯示第一發光圖案,其可例如為圖3所示的發光圖案(步驟S920);以及以所述第一發光圖案照射所述待曝光物件,藉以在所述待曝光物件上定義第一曝光圖案(步驟S930)。在此,所述的曝光圖案可以例如是用以在導電層形成線路的圖案,或是用以在絕緣層上形成通孔的圖案,本發明不以此為限。在上述曝光製程完成後,已曝光的物件可以接續著進行其他的製程,例如顯影、硬烤、蝕刻及/或光阻去除等,本發明不以此為限。 FIG9 is a flow chart of the steps of the exposure method of some embodiments of the present invention. Referring to FIG9, the exposure method described in this embodiment can be implemented in conjunction with the hardware, operation and interface described in the embodiments of FIG1 to FIG8. The exposure method includes the following steps: First, the exposure device (such as 100) performs an alignment operation to align a plurality of first micro-LED elements (such as 122/222/422/522/622) formed in an array on the smart mask (such as 120/220/620) with the object to be exposed (such as 50), and make the light-emitting surfaces of the plurality of first micro-LED elements (such as the side of the bottom plate 121/221 on which the first micro-LED elements are disposed) face the object to be exposed (step S910). For example, the exposure equipment can use an image sensor or a charged coupled device (CCD) to recognize/identify the alignment marks on the smart mask and the object to be exposed to obtain the position information of the smart mask and the object to be exposed, and then adjust the relative position of the smart mask and the object to be exposed based on the position information. For example, the alignment marks on the smart mask and the object to be exposed can be adjusted to overlap each other in the same axial direction to achieve alignment/alignment operations. Next, the smart mask can use a controller (such as 130) to send a first control signal to the plurality of first micro-LED elements, so that the plurality of first micro-LED elements respond to the control signal to light up and display a first light-emitting pattern, which can be, for example, the light-emitting pattern shown in FIG. 3 (step S920); and the first light-emitting pattern is used to illuminate the object to be exposed, so as to define a first exposure pattern on the object to be exposed (step S930). Here, the exposure pattern can be, for example, a pattern for forming a circuit on a conductive layer, or a pattern for forming a through hole on an insulating layer, but the present invention is not limited thereto. After the above-mentioned exposure process is completed, the exposed object can continue to undergo other processes, such as developing, hard baking, etching and/or photoresist removal, etc., but the present invention is not limited thereto.

在後續製程完成後,若該物件因應需求需進行下一次的曝光製程,則本實施例所述的智慧光罩僅需在進行對位操作之後,利用控制器發送第二控制信號至所述多個曝光micro LED的方式,使所述多個曝光micro LED響應於所述控制信號點亮並顯示第二發光圖案(即,重複執行上述步驟S910至S930),即可實現第二道的曝光製程,無需替換新的光罩。 After the subsequent process is completed, if the object needs to undergo the next exposure process, the smart mask described in this embodiment only needs to use the controller to send a second control signal to the multiple exposure micro LEDs after the alignment operation, so that the multiple exposure micro LEDs respond to the control signal to light up and display the second light-emitting pattern (i.e., repeat the above steps S910 to S930), and the second exposure process can be realized without replacing a new mask.

在一些實施例中,智慧光罩還可利用對位micro LED在待曝光物件上形成對位標記,以供給後續製程對位之用。舉例來說,智慧光罩可利用控制器發送對位信號給對位micro LED,使對位micro LED響應對位信號點亮並在待曝光物件上形成對位標記(步驟S940)。在步驟S940中,若待曝光物件為未經處理的晶圓(未帶有對位標記),智慧光罩可以利用對位micro LED在晶圓上形成第一個對位標記給後續製程對位之用;若待曝光物件為已帶有對位標記的晶圓,智慧光罩可以先基於已有的對位標記進行對位,並且在進行曝光時利用對位micro LED將晶圓的對位標記更新,藉以維持後續製程的對位精確度。其中,步驟S940的具體實施範例可以參考圖6和圖7實施例的描述,於此不再重複贅述。另外附帶一提的是,在圖9的步驟流程中,步驟S940雖然繪示為接續在步驟S930之後,但在實際應用中此兩步驟並不必然有順序性,可能是步驟S940先於S930執行,抑或是同時執行,本發明並不對此加以限制,相關要求以申請專利範圍之敘述為準。 In some embodiments, the smart mask can also use the alignment micro LED to form an alignment mark on the object to be exposed for alignment in subsequent processes. For example, the smart mask can use the controller to send an alignment signal to the alignment micro LED, so that the alignment micro LED lights up in response to the alignment signal and forms an alignment mark on the object to be exposed (step S940). In step S940, if the object to be exposed is an unprocessed wafer (without an alignment mark), the smart mask can use the alignment micro LED to form the first alignment mark on the wafer for alignment in subsequent processes; if the object to be exposed is a wafer with an alignment mark, the smart mask can first be aligned based on the existing alignment mark, and the alignment mark of the wafer can be updated using the alignment micro LED during exposure to maintain the alignment accuracy of subsequent processes. The specific implementation example of step S940 can refer to the description of the embodiments of FIG6 and FIG7, and will not be repeated here. In addition, in the step flow of FIG9, although step S940 is shown as being subsequent to step S930, in actual application, these two steps are not necessarily sequential, and step S940 may be executed before step S930, or they may be executed at the same time. The present invention does not limit this, and the relevant requirements shall be subject to the description of the scope of the patent application.

在一些實施例中,所述曝光方法在步驟S910之前還可包括校正補償步驟S900。所述校正補償步驟S900包括:檢測任一曝光單元區域中是否有曝光micro LED處於無法正常工作的狀態(步驟S902);當曝光單元區域中有z個所述曝光micro LED處於無法正常工作狀態時,調整對應的曝光單元區域中其餘處於正常工作狀態的所述曝光micro LED中至少其中之一的發光狀態,以 補償所述z個無法正常工作的曝光micro LED(步驟S902)。其中,步驟S902的具體實施範例可以參考圖5實施例的描述,於此不再重複贅述。 In some embodiments, the exposure method may further include a correction and compensation step S900 before step S910. The correction and compensation step S900 includes: detecting whether any exposure micro LED in any exposure unit area is in a state of not being able to work normally (step S902); when z exposure micro LEDs in the exposure unit area are in a state of not being able to work normally, adjusting the luminous state of at least one of the remaining exposure micro LEDs in the corresponding exposure unit area that are in a normal working state to compensate for the z exposure micro LEDs that are not working normally (step S902). The specific implementation example of step S902 can refer to the description of the embodiment of Figure 5, and will not be repeated here.

圖10是本發明一些實施例的智慧光罩的曝光圖案形成方法的步驟流程圖。請參照圖10,本實施例所述的曝光圖案形成方法同樣可以搭配前述圖1至圖8實施例所述的硬體、操作及介面來實施。所述曝光圖案形成方法包括以下步驟:定義所述微型發光二極體元件陣列(如222a/522a)的最小解析單位,以使所述微型發光二極體元件陣列劃分為多個曝光單元區域(如310/510/520/530),其中各所述曝光單元區域包括至少一微型發光二極體元件(步驟S10);基於定義的所述最小解析單位生成一可視化圖形介面(如圖8實施例的介面),其中所述可視化圖形介面包括多個選取單元(例如圖8左側的格狀區,每一格可例如代表一個選取單元),並且所述多個選取單元分別與所述多個曝光單元區域相互對應(步驟S1020);通過所述多個選取單元接收參數設定資訊(例如Micro LED的亮或暗、發光強度、連續發光或閃爍發光累計的時間等)(步驟S1030);以及依據所述參數設定資訊發出控制信號,以調整相應的所述單位區域中的微型發光二極體元件的曝光參數,藉以定義出曝光圖案(步驟S1040)。 FIG. 10 is a flow chart of the steps of the method for forming an exposure pattern of a smart mask according to some embodiments of the present invention. Referring to FIG. 10 , the method for forming an exposure pattern described in this embodiment can also be implemented in conjunction with the hardware, operation and interface described in the embodiments of FIGS. 1 to 8 . The method for forming an exposure pattern includes the following steps: defining the minimum resolution unit of the micro-LED element array (such as 222a/522a) so that the micro-LED element array is divided into a plurality of exposure unit areas (such as 310/510/520/530), wherein each of the exposure unit areas includes at least one micro-LED element (step S10); based on the defined The minimum resolution unit generates a visual graphic interface (such as the interface of the embodiment of FIG. 8 ), wherein the visual graphic interface includes a plurality of selection units (such as the grid area on the left side of FIG. 8 , each grid may, for example, represent a selection unit), and the plurality of selection units correspond to the plurality of exposure unit areas respectively (step S1020); receiving parameter setting information (such as the brightness or darkness of the Micro LED, the luminous intensity, the accumulated time of continuous luminescence or flashing luminescence, etc.) through the plurality of selection units (step S1030); and sending a control signal according to the parameter setting information to adjust the exposure parameters of the micro-LED element in the corresponding unit area, thereby defining an exposure pattern (step S1040).

另外需先說明的是,本文為了明確說明本揭露的各個發明特點而以多個實施例的方式分就各實施例說明如下。但並非是指各個實施例僅能單獨實施。熟習本領域的技術人員可依據需求自行將可行的實施範例搭配在一起設計,或是將不同實施例中可帶換的組件/模塊依設計需求自行帶換。換言之,本案所教示的實施方式不僅限於下列實施例所述的態樣,更包含有在可行的情況下,各個實施例/組件/模塊之間的帶換與排列組合,於此合先敘明。 In addition, it should be noted that in order to clearly explain the various inventive features of the present disclosure, this article uses multiple embodiments to explain each embodiment as follows. However, it does not mean that each embodiment can only be implemented alone. A technician familiar with this field can design feasible implementation examples together according to needs, or replace the replaceable components/modules in different embodiments according to design requirements. In other words, the implementation method taught by this case is not limited to the state described in the following embodiments, but also includes the replacement and arrangement combination between various embodiments/components/modules under feasible circumstances, which is described in advance.

10:電腦系統10: Computer system

12:可視化圖形介面12: Visual Graphical Interface

100:曝光設備100:Exposure equipment

110:承載平台110: Loading platform

112:承載區112: Loading area

120:智慧光罩120: Wisdom Light Shield

121:底板121: Bottom plate

122:微型發光二極體元件(micro LED)122: Micro LED

130:控制器130: Controller

140:光罩夾持部140: Mask clamping part

150:檢測器150: Detector

50:待曝光物件50: Objects to be exposed

51:感光材料51: Photosensitive materials

511:被曝光區域511: Exposed Area

512:未曝光區域512: Unexposed area

52:基板52: Substrate

Claims (15)

一種可調整圖案的智慧光罩,包括:一底板;多個第一微型發光二極體元件(micro-LED),以陣列排列設置於所述底板上;以及一保護層,覆蓋於所述多個第一微型發光二極體元件的至少其中之一或多個上,其中,所述多個第一微型發光二極體元件至少其中之一的尺寸介於0.1微米至100微米之間,並且所述多個第一微型發光二極體元件至少其中兩相鄰的第一微型發光二極體元件之間的間距介於0.01微米至20微米之間,其中,所述多個第一微型發光二極體元件基於從所述底板上的線路接收到的控制信號決定發光狀態,藉以定義曝光圖案,其中,所述多個第一微型發光二極體元件分為多個曝光單元區域,所述多個曝光單元區域至少其中之一包括以x*y陣列排列的多個所述第一微型發光二極體元件,並且x、y為自然數,以及其中,各所述多個曝光單元區域小於或等於所述曝光圖案中的最小線寬。 A smart light mask with adjustable pattern comprises: a base plate; a plurality of first micro-LED elements (micro-LED) arranged in an array on the base plate; and a protective layer covering at least one or more of the plurality of first micro-LED elements, wherein the size of at least one of the plurality of first micro-LED elements is between 0.1 micron and 100 micron, and the distance between at least two adjacent first micro-LED elements of the plurality of first micro-LED elements is between 0.1 micron and 100 micron. .01 micron to 20 microns, wherein the plurality of first micro-LED elements determine the luminous state based on the control signal received from the circuit on the base plate to define the exposure pattern, wherein the plurality of first micro-LED elements are divided into a plurality of exposure unit areas, at least one of the plurality of exposure unit areas includes a plurality of the first micro-LED elements arranged in an x*y array, and x and y are natural numbers, and wherein each of the plurality of exposure unit areas is less than or equal to the minimum line width in the exposure pattern. 如請求項1所述的可調整圖案的智慧光罩,其中所述底板具有第一區域以及第二區域,所述多個第一微型發光二極體元件設置於所述第一區域內。 As described in claim 1, the smart mask with adjustable pattern, wherein the base plate has a first area and a second area, and the plurality of first micro-light-emitting diode elements are arranged in the first area. 如請求項2所述的可調整圖案的智慧光罩,更包括:多個第二微型發光二極體元件(micro-LED),設置於所述底板的第二區域,並且用以經控制而顯示對位圖案。 The smart mask with adjustable pattern as described in claim 2 further includes: a plurality of second micro-light emitting diode elements (micro-LEDs) disposed in the second area of the base plate and used to display the alignment pattern through control. 如請求項3所述的可調整圖案的智慧光罩,其中所述第一區域包括所述底板的中心區域,並且所述第二區域包括所述底板的外圍區域。 The smart mask with adjustable pattern as described in claim 3, wherein the first area includes the central area of the base plate, and the second area includes the peripheral area of the base plate. 如請求項1所述的可調整圖案的智慧光罩,其中當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其中之一曝光單元區域中其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的發光狀態被調整以補償所述z個無法正常工作的第一微型發光二極體元件,其中z為自然數,且z<x*y。 The smart mask with adjustable pattern as described in claim 1, wherein when z first micro-LED elements in one of the exposure unit regions are in a state of not being able to work properly, the luminous state of at least one of the remaining first micro-LED elements in the one of the exposure unit regions that are in a normal working state is adjusted to compensate for the z first micro-LED elements that are not working properly, wherein z is a natural number, and z<x*y. 如請求項5所述的可調整圖案的智慧光罩,其中當所述多個第一微型發光二極體元件處於正常工作狀態時,所述多個第一微型發光二極體元件經控制而在第一期間內被維持點亮。 As described in claim 5, the adjustable pattern smart mask, wherein when the plurality of first micro-LED elements are in a normal working state, the plurality of first micro-LED elements are controlled to remain lit during a first period. 如請求項6所述的可調整圖案的智慧光罩,其中當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的點亮時間被調整為大於所述第一期間的第二期間。 The smart mask with adjustable pattern as described in claim 6, wherein when z of the first micro-LED elements in one of the exposure unit regions are in a state of being unable to work normally, the lighting time of at least one of the remaining first micro-LED elements in a normal working state is adjusted to a second period greater than the first period. 如請求項7所述的可調整圖案的智慧光罩,其中所述第一期間和所述第二期間符合以下關係:
Figure 109131004-A0305-02-0032-3
其中,T1為所述第一期間,T2為所述第二期間,並且n為一常數。
The smart mask with adjustable pattern as described in claim 7, wherein the first period and the second period satisfy the following relationship:
Figure 109131004-A0305-02-0032-3
Wherein, T1 is the first period, T2 is the second period, and n is a constant.
如請求項5所述的可調整圖案的智慧光罩,其中當所述多個第一微型發光二極體元件處於正常工作狀態時,所述多個第一微型發光二極體元件經控制而具有第一亮度;以及當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其餘處於正常工作狀態 的所述第一微型發光二極體元件中至少其中之一的發光亮度被調整為大於所述第一亮度的第二亮度。 The smart mask with adjustable pattern as described in claim 5, wherein when the plurality of first micro-LED elements are in a normal working state, the plurality of first micro-LED elements are controlled to have a first brightness; and when z first micro-LED elements in one of the exposure unit regions are in a state where they cannot work normally, the light emitting brightness of at least one of the remaining first micro-LED elements in a normal working state is adjusted to a second brightness greater than the first brightness. 一種曝光設備,包括:一承載平台,具有適於設置待曝光物件的承載區;一可調整圖案的智慧光罩,包括多個第一微型發光二極體元件(micro-LED),其中各所述第一微型發光二極體元件接收控制信號,並且基於接收到的所述控制信號決定發光狀態,藉以定義曝光圖案;一控制器,電性連接所述多個第一微型發光二極體元件,用以產生所述控制信號以分別控制所述多個第一微型發光二極體元件的發光狀態;以及一光罩夾持部,相對所述承載平台配置,用以固定所述可調整圖案的智慧光罩,其中所述曝光設備在執行對位操作時,所述光罩夾持部帶動所述可調整圖案的智慧光罩以與設置於所述承載區上的待曝光物件對齊,其中,所述光罩夾持部適於固定不包括所述多個第一微型發光二極體元件的傳統光罩,其中,所述可調整圖案的智慧光罩更包括:一底板,其尺寸與所述傳統光罩一致,其中所述多個第一微型發光二極體元件以陣列排列配置於所述底板上;以及一保護層,覆蓋於所述多個第一微型發光二極體元件的至少其中之一或多個上,其中,所述多個第一微型發光二極體元件至少其中之一的尺寸介於0.1微米至100微米之間,並且所述多個第一微型發光二極體元件至少其中兩相鄰的第一微型發光二極體元件之間的間距介於0.01微米至20微米之間, 其中,所述多個第一微型發光二極體元件分為多個曝光單元區域,所述多個曝光單元區域至少其中之一包括以x*y陣列排列的多個所述第一微型發光二極體元件,並且x、y為自然數,以及其中,各所述多個曝光單元區域小於或等於所述曝光圖案中的最小線寬。 An exposure device includes: a carrier platform having a carrier area suitable for setting an object to be exposed; a smart mask with adjustable pattern, including a plurality of first micro-light emitting diode elements (micro-LED), wherein each of the first micro-light emitting diode elements receives a control signal and determines a light emitting state based on the received control signal to define an exposure pattern; a controller electrically connected to the plurality of first micro-light emitting diode elements to generate the control signal to control the exposure pattern; The light-emitting states of the plurality of first micro-LED elements are controlled respectively; and a mask clamping portion is arranged relative to the carrying platform and is used to fix the smart mask with an adjustable pattern, wherein when the exposure device performs an alignment operation, the mask clamping portion drives the smart mask with an adjustable pattern to align with the object to be exposed disposed on the carrying area, wherein the mask clamping portion is suitable for fixing a conventional mask that does not include the plurality of first micro-LED elements, wherein The adjustable pattern smart mask further comprises: a base plate having a size consistent with the conventional mask, wherein the plurality of first micro-LED elements are arranged in an array on the base plate; and a protective layer covering at least one or more of the plurality of first micro-LED elements, wherein the size of at least one of the plurality of first micro-LED elements is between 0.1 micron and 100 micron, and the plurality of first micro-LED elements are The spacing between at least two adjacent first micro-LED elements in the element is between 0.01 microns and 20 microns, wherein the plurality of first micro-LED elements are divided into a plurality of exposure unit areas, at least one of the plurality of exposure unit areas includes a plurality of the first micro-LED elements arranged in an x*y array, and x and y are natural numbers, and wherein each of the plurality of exposure unit areas is less than or equal to the minimum line width in the exposure pattern. 如請求項10所述的曝光設備,其中當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其中之一曝光單元區域中其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的發光狀態被調整以補償所述z個無法正常工作的第一微型發光二極體元件,其中z為自然數,且z<x*y。 The exposure device as claimed in claim 10, wherein when z first micro-LED elements in one of the exposure unit regions are in a state of not being able to work properly, the luminous state of at least one of the remaining first micro-LED elements in the one of the exposure unit regions that are in a normal working state is adjusted to compensate for the z first micro-LED elements that are not working properly, wherein z is a natural number, and z<x*y. 如請求項11所述的曝光設備,其中當所述多個第一微型發光二極體元件處於正常工作狀態時,所述多個第一微型發光二極體元件經控制而在第一期間內被維持點亮,以及當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的點亮時間被調整為大於所述第一期間的第二期間。 The exposure device as claimed in claim 11, wherein when the plurality of first micro-LED elements are in a normal working state, the plurality of first micro-LED elements are controlled to remain lit during a first period, and when z first micro-LED elements in one of the exposure unit regions are in a state where they cannot work normally, the lighting time of at least one of the remaining first micro-LED elements in a normal working state is adjusted to a second period greater than the first period. 如請求項12所述的曝光設備,其中所述第一期間和所述第二期間符合以下關係:
Figure 109131004-A0305-02-0034-4
其中,T1為所述第一期間,T2為所述第二期間,並且n為一常數。
The exposure device as described in claim 12, wherein the first period and the second period satisfy the following relationship:
Figure 109131004-A0305-02-0034-4
Wherein, T1 is the first period, T2 is the second period, and n is a constant.
一種用於半導體製程的曝光方法,包括: 將設置有以陣列組成的多個第一微型發光二極體元件(micro-LED)的底板與待曝光物件對齊,並且使所述多個第一微型發光二極體元件的發光面朝向所述待曝光物件;發送第一控制信號至所述多個第一微型發光二極體元件,使所述多個第一微型發光二極體元件響應於所述控制信號點亮並顯示第一發光圖案;以及以所述第一發光圖案照射所述待曝光物件,藉以在所述待曝光物件上定義第一曝光圖案,其中,所述多個第一微型發光二極體元件分為多個曝光單元區域,所述多個曝光單元區域至少其中之一包括以x*y陣列排列的多個所述第一微型發光二極體元件,並且x、y為自然數,其中,各所述多個曝光單元區域小於或等於所述曝光圖案中的最小線寬,其中,當所述其中之一曝光單元區域中有z個所述第一微型發光二極體元件處於無法正常工作狀態時,所述曝光方法更包括:調整所述其中之一曝光單元區域中其餘處於正常工作狀態的所述第一微型發光二極體元件中至少其中之一的發光狀態,以補償所述z個無法正常工作的第一微型發光二極體元件,其中z為自然數,且z<x*y。 An exposure method for semiconductor manufacturing process, comprising: aligning a base plate provided with a plurality of first micro-LED elements (micro-LED) in an array with an object to be exposed, and making the light-emitting surfaces of the plurality of first micro-LED elements face the object to be exposed; sending a first control signal to the plurality of first micro-LED elements, so that the plurality of first micro-LED elements light up in response to the control signal and display a first light-emitting pattern; and irradiating the object to be exposed with the first light-emitting pattern, thereby defining a first exposure pattern on the object to be exposed, wherein the plurality of first micro-LED elements are divided into a plurality of exposure unit areas, the At least one of the multiple exposure unit areas includes multiple first micro-LED elements arranged in an x*y array, and x and y are natural numbers, wherein each of the multiple exposure unit areas is less than or equal to the minimum line width in the exposure pattern, wherein when z first micro-LED elements in one of the exposure unit areas are in a state of not being able to work normally, the exposure method further includes: adjusting the luminous state of at least one of the remaining first micro-LED elements in the one of the exposure unit areas that are in a normal working state to compensate for the z first micro-LED elements that are not working normally, wherein z is a natural number and z<x*y. 如請求項14所述的用於半導體製程的曝光方法,更包括:發送第二控制信號至所述多個第一微型發光二極體元件,使所述多個第一微型發光二極體元件響應於所述控制信號點亮並顯示第二發光圖案;以及以所述第二發光圖案照射所述待曝光物件,藉以在所述待曝光物件上定義第二曝光圖案。 The exposure method for semiconductor manufacturing process as described in claim 14 further includes: sending a second control signal to the plurality of first micro-LED elements, so that the plurality of first micro-LED elements light up and display a second light-emitting pattern in response to the control signal; and irradiating the object to be exposed with the second light-emitting pattern to define a second exposure pattern on the object to be exposed.
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