TWI866599B - Method for making probe with insulator layer, the jig disposing thereof and the method for using the same - Google Patents

Abstract

This invention provides a method for making probe with insulator layer, which comprises sequentially the following steps of (a) inducing a first precursor into a reactor for depositing an adhesive layer on a probe that is disposed on a jig inside the reactor by using atomic layer deposition (ALD), the adhesive layer surrounding and covering a surface of the probe and exposing two opposite end portions of the probe; (b) inducing a second precursor into the reactor for depositing an insulation layer on the adhesive layer that surrounds and covers the adhesive layer and has a dielectric constant greater than or equal to 3.9 by using ALD; and (c) inducing a third precursor into the reactor for depositing an ceramic layer on the insulation layer that surrounds and covers the insulation layer by using ALD. This invention also provides a probe with insulator layer made from the method stated above, a jig disposing thereof, and the method for using the same.

Description

Method for manufacturing a probe with an insulating film layer, its supporting fixture and method of use

The present invention relates to a method for manufacturing a probe, and in particular to a method for manufacturing a probe having an insulating film layer and a method for using the probe.

In view of the fact that wafer probe technology is improving along with the technological development of the integrated circuit (IC) process-related industries. Therefore, the use of wafer probe technology to detect whether the integrated circuit components on the wafer can operate normally is a testing procedure that the IC process-related industries must perform before supplying their wafers to downstream manufacturers. In recent decades, the channel length of transistors produced by the IC process-related industries has evolved from the early 0.15μm to less than 20nm in recent years, so the requirements and specifications of wafer probe testing have also been greatly improved.

Researchers in the wafer probe industry know that the smaller the IC size, the faster the computing speed and the more pins it has. Therefore, the number of probes (probe density) on the probe card required for wafer probe testing also increases, resulting in a decrease in the distance between adjacent probes on the probe card. However, when performing wafer probe testing, the noise problem caused by capacitive and inductive coupling between adjacent probes on the probe card can easily lead to unstable testing. In addition, the adjacent probes on the probe card can also touch each other, affecting the test signal. To solve the above problems, the industry first forms an insulating material on the metal probe to prevent adjacent probes from contacting and affecting the detection results. A shielding layer is also formed on the insulating layer to solve the noise interference problem.

For example, the invention patent case with certificate number TWI441785 of the Republic of China (hereinafter referred to as the former case 1, please refer to Figures 1 and 2) discloses a coaxial probe 1 used on a test head of a wafer probe card, which includes a probe body 11, an insulating layer 12 and a metal conductive layer 13. The probe body 11 has a first end 111 for detecting a wafer (not shown) and having a needle tip shape, and a second end 112 opposite to the first end 111 and used to form a solder (not shown) for connecting with a printed circuit board (not shown) for wafer testing. The insulating layer 12 and the metal conductive layer 13 are sequentially formed on the probe body 11 by chemical vapor deposition (CVD), physical vapor deposition (PVD), evaporation, sputtering, or ion plating, and the first end 111 and the second end 112 of the probe body 11 are exposed.

Although the previous case 1 can prevent adjacent probes from contacting each other by the insulating layer 12 on the surface of the probe body 11 to avoid affecting the detection results, it can also solve the noise interference problem by shielding the metal conductive layer 13. However, the film uniformity and step coverage of the film obtained by PVD are poor, the density is average, and the film components are prone to contain impurities; while the film obtained by CVD has good coverage and density, but its film thickness is difficult to control and the film is also prone to contain impurities. In addition, the film thickness obtained by PVD is greater than 2μm, while the film thickness obtained by CVD is greater than 1.5μm. For the probe card with increasing probe density year by year, it not only does not meet the requirements, but also reduces the success rate of needle implantation, and cannot be mass-produced.

For example, the Republic of China's invention patent case with certificate number TWI798069 (hereinafter referred to as the former case 2, please refer to Figures 3 and 4) discloses a probe card 2, which includes a guide plate 21 and a plurality of shielding structures 22. The guide plate 21 includes an upper surface 211, a lower surface 212, and a plurality of inner annular surfaces 213 that penetrate the upper surface 211 and the lower surface 212 and are spaced apart from each other, and each inner annular surface 213 defines a guide hole 210 with a diameter less than 50 μm. Each shielding structure 22 is formed on each inner annular surface 213 by atomic layer deposition (hereinafter referred to as ALD) or atomic layer etching (hereinafter referred to as ALE). Each shielding structure 22 has a single layer or multiple layers of electromagnetic absorption material or electromagnetic reflection material and a single _layer or multiple layers of insulating material (the one with lower dielectric constant). The shielding structure 22 can be _Al2O3 / _AlN / _{Al2O3 multilayer} film, _Al2O3 / _{CoO / Al2O3} multilayer film, _AlN / _{Al2O3 / Fe2O3} /AlN/ _{Al2O3 multilayer} film, _Si3N4 / _SiO2 multilayer film, _Si3N4 / _SiO2 /AlN/ _{SiO2 multilayer} film. Specifically, each shielding structure 22 has a first layer 221, a shielding layer 222 formed on each first layer 221, and a second layer 223 formed on each shielding layer 222. The first layer 221 and the second layer 223 are insulating materials, and the thickness of the first layer 221, the shielding layer 222, and the second layer 223 is between 100nm and 500nm. In actual use, the probe can be inserted into the position of the second layer 223 or the position of the guide hole 210, so that the probe is not easily disturbed by the adjacent probe when transmitting the test signal and causing distortion.

Although the shielding structure 22 of the previous case 2 protects the probe from being disturbed by the adjacent probe and causing distortion, the hole depth and size of the guide hole 210 of the probe card 2 of the previous case 2 will affect the coverage of the multi-layer film of the shielding structure 22, and increase the complexity of the coating. In addition, if the probe card 2 of the previous case 2 fails, the entire probe card 2 needs to be replaced, which will increase the cost.

From the above explanation, it can be seen that improving the manufacturing method of the film structure of wafer probe probes under the premise of increasing mass production to meet the increasing demand for probe density year by year is a problem that relevant industries in the relevant technical field need to solve.

Therefore, the first purpose of the present invention is to provide a method for manufacturing a probe with an insulating film layer that can increase production and meet the increasing demand for probe density year by year.

Therefore, the method for manufacturing a probe having an insulating film layer of the present invention includes the following steps in sequence: step (a), step (b), and step (c).

The step (a) is to introduce a first precursor into a reaction chamber to deposit an adhesive layer surrounding and covering a surface of each probe body on a plurality of probe bodies on a supporting fixture disposed in the reaction chamber by atomic layer deposition.

The step (b) is to introduce a second precursor into the reaction chamber to deposit an insulating layer surrounding and covering each adhesive layer on each adhesive layer by atomic layer deposition, and each insulating layer has a dielectric constant greater than or equal to 3.9.

The step (c) is to introduce a third precursor into the reaction chamber to deposit a ceramic layer surrounding and covering each insulating layer on each insulating layer by atomic layer deposition.

The support fixture includes a support box and at least one support assembly. The support box includes a surrounding wall defining a chamber and two openings arranged opposite to each other and communicating with the chamber. An inner ring surface of the surrounding wall is provided with at least one pair of platforms protruding toward each other. The at least one support assembly is detachably arranged on the at least one pair of platforms of the support box, and includes at least one support in the chamber. The at least one support has a base, a transmission port penetrating the base up and down, and a pair of rails spaced apart and arranged opposite to each other on the base. The pair of rails are used to accommodate the opposite ends of the probe bodies, so that the probe bodies can be spaced apart from each other on the base and suspended on the transmission port, so that the first front driver, the second front driver and the third front driver can move from one of the openings of the carrier box to the chamber along a transmission direction to be transmitted through the transmission port and flow around the probe bodies.

The second purpose of the present invention is to provide a probe having an insulating film layer manufactured by the above-mentioned manufacturing method.

The probe with an insulating film layer of the present invention includes a probe body and an insulating film layer. The insulating film layer includes an adhesive layer surrounding and covering a surface of the probe body, an insulating layer surrounding and covering the adhesive layer, and a ceramic layer surrounding and covering the insulating layer, and the insulating layer has a dielectric constant greater than or equal to 3.9.

The third purpose of the present invention is to provide a carrying fixture.

The support fixture of the present invention is suitable for implementing the manufacturing method as described above and for supporting a plurality of probe bodies, and includes a support box and at least one support assembly. The support box includes a surrounding wall defining a chamber and two openings arranged opposite to each other and communicating with the chamber. An inner annular surface of the surrounding wall is provided with at least one pair of platforms protruding toward each other. The at least one support assembly is detachably arranged on the at least one pair of platforms of the support box, and includes at least one support in the chamber. The at least one support has a base, a transmission port penetrating the base up and down, and a pair of rails spaced apart and arranged opposite to each other on the base. The pair of rails are used to accommodate the opposite ends of the probe bodies, so that the probe bodies can be spaced apart from each other on the base and suspended on the transmission port, so that the first front driver, the second front driver and the third front driver can move from one of the openings of the carrier box to the chamber along a transmission direction to be transmitted through the transmission port and flow around the probe bodies.

The fourth purpose of the present invention is to provide a method for using a probe having an insulating film layer.

The method for using the probe with an insulating film layer of the present invention includes implanting the probe with an insulating film layer or a plurality of the probes with an insulating film layer obtained by the above-mentioned manufacturing method into a carrier having through holes arranged in an array, wherein the distance between the ceramic layer of the probe with an insulating film layer implanted in each through hole of the carrier and the ceramic layer of the adjacent probe with an insulating film layer is less than or equal to 12μm.

The effect of the present invention is that, during the ALD process, the first precursor, the second precursor and the third precursor can be moved from the opening of the carrier box to the chamber along the transmission direction through the carrier fixture disposed in the reaction chamber, so as to be transmitted through the transmission port of the carrier to flow to and surround each probe body, thereby sequentially depositing each adhesive layer, insulating layer and ceramic layer with excellent coverage and good thickness uniformity on each probe body, which can increase production capacity and meet the increasing demand for probe density year by year, and can also improve the success rate of needle implantation.

1: Coaxial probe

11: Probe body

111: First end

112: Second end

12: Insulation layer

13: Metal conductive layer

2: Probe card

21: Guide plate

210: Guide hole

211: Upper surface

212: Lower surface

213: Inner ring surface

22: Shielding structure

221: First level

222: Shielding layer

223: Second level

3: Probe body

31: Surface

32: End

4: Insulation film layer

41: Adhesive layer

42: Insulation layer

43: Ceramic layer

5: Carrying box

501: Room

502: Open mouth

51:Surrounding wall

511: Inner ring surface

52: Platform

6: Carrier assembly

61: Loading

610: Transmission port

611: Positioning pin

62: Carrier

620: Transmission port

621: Base

622: Track

623: Positioning hole

7: Carrier board

70:Through hole

D: Distance

P: Probe with insulating film layer

F: Transmission direction

T: Carrying fixture

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic diagram illustrating a coaxial probe used on a test head of a wafer probe card disclosed in the invention patent case No. TWI441785 of the Republic of China; FIG. 2 is a partial enlarged schematic diagram of area A in FIG. 1; FIG. 3 is a stereogram illustrating a coaxial probe used on a test head of a wafer probe card disclosed in the invention patent case No. TWI79 of the Republic of China; A probe card disclosed in the invention patent case with certificate number 8069; FIG. 4 is a top view schematic diagram illustrating the detailed structure of FIG. 3; FIG. 5 is a schematic diagram illustrating a probe with an insulating film layer produced by an embodiment of the method for producing a probe with an insulating film layer of the present invention; FIG. 6 is a top view schematic diagram illustrating an embodiment of a carrier fixture suitable for implementing the method of the embodiment of the present invention. FIG. 7 is a schematic top view illustrating a carrier of the carrier assembly of the embodiment; FIG. 8 is a side view of FIG. 7 illustrating the relative positions of a base, a pair of rails, a transmission port and a plurality of probe bodies of the carrier of the embodiment of the present invention; FIG. 9 is a schematic top view illustrating an implementation of the carrier assembly formed by positioning a plurality of carriers of the embodiment on the carrier; FIG. 10 is a side view, illustrating an embodiment in which a plurality of carrier assemblies as shown in FIG. 9 are arranged in a carrier box of the carrier fixture; FIG. 11 is a front view of FIG. 10, illustrating a transmission direction of a front driver when a front driver is introduced from an opening of the carrier box in the manufacturing method of the embodiment of the present invention; and FIG. 12 is a schematic diagram, illustrating a method for using the probe with an insulating film layer of the present invention.

Before the present invention is described in detail, it should be noted that similar components are represented by the same numbers in the following description.

Referring to FIG. 5 , an embodiment of the method for manufacturing a probe P having an insulating film layer of the present invention includes the following steps in sequence: step (a), step (b), and step (c).

The step (a) is to introduce a first precursor into a reaction chamber (not shown) to deposit an adhesive layer 41 surrounding and covering a surface 31 of each probe body 3 on a plurality of probe bodies 3 on a carrier fixture T (see FIG. 10 ) disposed in the reaction chamber through ALD, and each adhesive layer 41 exposes the opposite ends 32 of the corresponding probe body 3.

The step (b) is to introduce a second precursor into the reaction chamber to deposit an insulating layer 42 surrounding and covering each adhesive layer 41 on each adhesive layer 41 through ALD. Each insulating layer 42 has a dielectric constant greater than or equal to 3.9.

The step (c) is to introduce a third precursor into the reaction chamber to deposit a ceramic layer 43 surrounding and covering each insulating layer 42 on each insulating layer 42 through ALD.

An embodiment of the support fixture T is shown in Figures 10 and 11, which is suitable for implementing the manufacturing method of the embodiment of the present invention and is used to support the probe bodies 3. The support fixture T of the embodiment of the present invention includes a support box 5 and at least one carrier assembly 6.

The carrying box 5 includes a surrounding wall 51 defining a chamber 501 and two openings 502 disposed opposite to each other and communicating with the chamber 501. An inner annular surface 511 of the surrounding wall 51 is provided with at least one pair of platforms 52 protruding toward each other.

The at least one carrier assembly 6 is detachably disposed on the at least one pair of platforms 52 of the carrier box 5, and includes at least one carrier 62 in the chamber 501. Referring to Figures 7 and 8, the at least one carrier 62 has a base 621, a transmission port 620 that passes through the base 621 up and down, and a pair of rails 622 that are spaced apart and disposed on the base 621 facing each other. The pair of rails 622 are used to accommodate the opposite ends 32 of the probe bodies 3, so that the probe bodies 3 can be placed on the base 621 at intervals and suspended on the transmission port 620, so that the first front drive, the second front drive and the third front drive can move from one of the openings 502 of the carrier box 5 to the chamber 501 along a transmission direction F (see FIG. 11 ) to be transmitted through the transmission port 620 of the carrier 62 to flow to and surround the probe bodies 3. It is worth mentioning that, in order to allow the probe bodies 3 to be positioned stably and spaced apart from each other on the base 621, preferably, the base 621 of the carrier 62 is further recessed downwards at the locations adjacent to the transmission port 620 and corresponding to the two ends 32 of each probe body 3 to accommodate the two opposite ends 32 of each probe body 3 (not shown), so as to prevent the probe bodies 3 from rolling back and forth on the base 621 of the carrier 62.

Preferably, after performing step (a), step (b) and step (c), the total thickness of each adhesive layer 41, insulating layer 42 and ceramic layer 43 is less than or equal to 1000nm.

It should be noted that the purpose of each adhesive layer 41 is to reduce the surface roughness of each probe body 3, so as to improve the adhesion of each insulating layer 42 and each ceramic layer 43 deposited on the surface 31 of each probe body 3. Therefore, preferably, in the step (a), each adhesive layer 41 is selected from AlN, TaN, Al ₂ O ₃ or TiO ₂ , and has a thickness of less than 50 nm. The first precursor suitable for the step (a) of the present invention is selected from a mixed gas of trimethylaluminum (TMA) and ammonia (NH ₃ ), a mixed gas of penta(dimethylamino)tantalum (PDMAT) and NH ₃ , a mixed gas of TMA and water (H ₂ O), or a mixed gas of tetra(dimethylamino)titanium (TDMAT) and H ₂ O. In this embodiment of the present invention, each adhesive layer 41 is described using TiO ₂ as an example.

It should be noted here that ALD is a mature deposition technology. It is well known that ALD forms a film through multiple cycles of deposition, and the greater the number of cycles, the thicker the deposited film thickness. In other words, each cycle includes four steps, which are step (A), step (B), step (C), and step (D) in sequence. The step (A) is to introduce a precursor a into a vacuum chamber to chemically adsorb the precursor a on a material to be deposited in the vacuum chamber. The step (B) is to introduce an inert gas [such as argon (Ar)] into the vacuum chamber to flush and remove (purge) a chemical adsorption reaction byproduct that evaporates in the vacuum chamber. The step (C) is to introduce a precursor b into the vacuum chamber to carry out a gas phase chemical reaction with the precursor a chemically adsorbed on the object to be deposited, thereby forming a film with a thickness of an atomic layer on the object to be deposited. The step (D) is to introduce the inert gas (Ar) into the vacuum chamber to flush and remove the remaining precursor b that does not participate in the chemical gas phase reaction during the execution of the step (C), and the by-product generated by the chemical gas phase reaction and volatilized in the vacuum chamber. Therefore, taking the adhesive layer 41 of the embodiment of the present invention as _TiO2 as an example, the first precursor of step (a) is a mixed gas of TDMAT and _H2O , which means that step (a) includes a step (a1), a step (a2), a step (a3), and a step (a4) in sequence. Specifically, step (a1) is to introduce TDMAT into the reaction chamber, step (a2) is to introduce Ar into the reaction chamber, step (a3) is to introduce _H2O into the reaction chamber, and step (a4) is to introduce Ar into the reaction chamber.

In addition, the purpose of each insulating layer 42 is to make the probe P with an insulating film layer produced by the embodiment unable to provide electron transmission when actually applied to wafer probe testing. Therefore, preferably, in the step ( _b ), each insulating layer 42 is selected from _Al2O3 , _HfO2 , _Si3N4 or _SiO2 , and the thickness is less than 800nm. The second precursor suitable for the step (b) of the present invention is selected from a mixed gas of TMA and _H2O , _a mixed gas of tetrakis(ethylmethylamino)arsenic (TEMAH) and ozone ( _O3 ), a mixed gas of silicon tetraiodide ( _SiI4 ) and _NH3 , or a mixed gas of bis(diethylamino)silane (BDEAS) and _O3 . It should be noted that SiI ₄ is a solid compound powder, which is dissolved in an organic solvent before being introduced into the reaction chamber and then introduced into the reaction chamber through an inert gas as a transport gas. In the embodiment of the present invention, each insulating layer 42 is illustrated by taking HfO ₂ as an example.

Taking the insulating layer 42 of the embodiment of the present invention as HfO ₂ as an example, the second precursor of step (b) is a mixed gas of TEMAH and O ₃ , which means that step (b) includes a step (b1), a step (b2), a step (b3), and a step (b4) in sequence. In detail, step (b1) is to introduce TEMAH into the reaction chamber, step (b2) is to introduce Ar into the reaction chamber, step (b3) is to introduce O ₃ into the reaction chamber, and step (b4) is to introduce Ar into the reaction chamber.

Furthermore, the function of each ceramic layer 43 is to provide wear resistance to avoid scratching of each insulating layer 42. Therefore, preferably, in the step (c), each ceramic layer 43 is selected from _Y2O3 , _Al2O3 , _SiO2 or _TiO2 , and has a thickness of less than 200nm. The third precursor suitable for the step ( _c ) of the present invention is _selected from a mixed gas of tri(methylcyclopentadienyl)yttrium [Y(MeCp) ₃ ] and _H2O , a mixed gas of TMA and _H2O , a mixed gas of BDEAS and _O3 , or _a mixed gas of TDMAT and _H2O . In the embodiment of the present invention, each ceramic layer 43 is illustrated by taking _Al2O3 as an example.

Taking the ceramic layer 43 of the embodiment of the present invention as Al ₂ O ₃ as an example, the second precursor of step (c) is a mixed gas of TMA and H ₂ O, which means that step (c) includes a step (c1), a step (c2), a step (c3), and a step (c4) in sequence. Specifically, step (c1) is to introduce TMA into the reaction chamber, step (c2) is to introduce Ar into the reaction chamber, step (c3) is to introduce H ₂ O into the reaction chamber, and step (c4) is to introduce Ar into the reaction chamber.

It is further explained that the film forming rate must be increased to increase production efficiency while satisfying the coating coverage rate. Preferably, in step (a) and step (c) of the embodiment of the present invention, the growth rate per cycle (GPC) is less than or equal to 0.3nm/cycle; and in step (b), the growth rate per cycle is greater than or equal to 0.3nm/cycle. More preferably, in step (a) and step (c) of the embodiment of the present invention, the growth rate per cycle (GPC) is less than or equal to 0.25nm/cycle; and in step (b), the growth rate per cycle is greater than or equal to 0.4nm/cycle.

More preferably, the method of increasing the film forming rate described in the above paragraph is to make the concentration of the second precursor introduced into the reaction chamber 1.5 to 3 times the concentration of the first precursor and the third precursor introduced when implementing the steps (a) and (c) when implementing the step (b). Therefore, in each cycle of implementing the step (b), the second precursor can produce a chemical vapor condensation reaction on the film layer formed by the reaction in the previous cycle, thereby increasing the film forming rate of the step (b).

As can be seen from the detailed description of the manufacturing method of the embodiment of the present invention, the probe P with an insulating film layer of the present invention is shown in FIG5 and includes the probe body 3 and an insulating film layer 4. The insulating film layer 4 includes the adhesive layer 41 surrounding and covering the surface 31 of the probe body 3 and exposing the opposite ends 32 of the probe body 3, the insulating layer 42 surrounding and covering the adhesive layer 41, and the ceramic layer 43 surrounding and covering the insulating layer 42. The total thickness of the insulating film layer 4 (that is, the total thickness of the adhesive layer 41, the insulating layer 42 and the ceramic layer 43) is less than or equal to 1000nm. In the embodiment of the present invention, a film structure of the insulating film layer 4 is TiO ₂ /HfO ₂ /Al ₂ O ₃ .

Preferably, the thickness difference of the insulating film layer 4 along any diameter of the probe body 3 is less than 30%. More preferably, the thickness difference of the insulating film layer 4 along any diameter of the probe body 3 is less than 5%.

Specifically, in order to improve the overall yield of the manufacturing method of the embodiment of the present invention, the carrier fixture T of the embodiment of the present invention includes a plurality of carrier assemblies 6, and the inner ring surface 511 of the surrounding wall 51 of the carrier box 5 is provided with a plurality of pairs of platforms 52 spaced apart from each other and protruding toward each other. Each carrier assembly 6 is detachably disposed on each pair of platforms 52.

Furthermore, each carrier assembly 6 further includes a carrier plate 61 as shown in FIG. 6, FIG. 10 and FIG. 11, and each carrier assembly 6 includes a plurality of carriers 62 (see FIG. 9). In the embodiment of the present invention, each carrier assembly 6 of the supporting fixture T is illustrated by taking four carriers 62 as shown in FIG. 9 as an example, but is not limited thereto.

More specifically, each carrier 61 is detachably mounted on each pair of platforms 52 of the carrier box 5, and has a plurality of transmission ports 610 that are spaced apart from each other and penetrate the carrier 61 up and down, and a plurality of positioning members distributed around each transmission port 610. In the embodiment of the present invention, the transmission ports 610 of the carrier 61 of each carrier assembly 6 are illustrated by taking four transmission ports 610 as shown in FIG. 6 as an example, but are not limited thereto. Each positioning member of each carrier 61 is one of a positioning pin protruding upward from the carrier 61 and a positioning hole recessed downward from the carrier 61. Each carrier 62 also has a plurality of positioning members, and the positioning member of each carrier 62 is the other of a positioning pin protruding upward from each base 621 and a positioning hole recessed downward from each base 621. In the carrier fixture T of the embodiment of the present invention, each positioning member of the carrier plate 61 of each carrier assembly 6 and each positioning member of the four carriers 62 thereof are respectively described by taking a positioning pin 611 and a positioning hole 623 as an example, but the present invention is not limited thereto. As can be seen from the above description, each positioning member (positioning hole 623) of the four carriers 62 of each carrier assembly 6 can be respectively and correspondingly limited on the positioning member (positioning pin 611) around the four transmission ports 610 of its carrier plate 61, so that the transmission ports 620 of the four carriers 62 of each carrier assembly 6 can be respectively and correspondingly connected to the four transmission ports 610 of its carrier plate 61. Therefore, the present invention utilizes the supporting components 6 of the supporting fixture T of the embodiment to increase the supporting quantity of the probe body 3, thereby greatly improving the output of the product manufactured by the manufacturing method of the embodiment.

When the supporting fixture T of the embodiment of the present invention is actually used, the two ends 32 of the probe bodies 3 are positioned in advance in the pairs of limiting grooves (not shown) of the bases 621 of the four carriers 62 of each carrier assembly 6, and then the positioning members (positioning holes 623) of the four carriers 62 are positioned on the positioning members (positioning pins 611) around the four transmission ports 610 of the carrier plate 61 to form the corresponding supporting assembly 6. Then, the carrier plates 61 of the carrier plates 6 carrying the probe bodies 3 are successively placed on the pairs of platforms 52 of the supporting box 5, so that the probe bodies 3 are located in the chambers 501 of the supporting box 5. Finally, the carrying box 5 carrying the probe bodies 3 is placed in the reaction chamber (not shown) so that the probe bodies 3 can perform the manufacturing method of the embodiment of the present invention in the reaction chamber.

Referring to FIG. 12 , the method for using the probe P with an insulating film layer of the present invention includes implanting a plurality of probes P with an insulating film layer manufactured by the manufacturing method of the embodiment into a carrier 7 having through holes 70 arranged in an array. The insulating film layer 4 of the probes P with an insulating film layer of the present invention is obtained by ALD deposition, so that the thickness difference of each insulating film layer 4 along the radial direction of the corresponding probe body 3 can be less than 30%, or even less than 5%, and the film thickness is very uniform. Therefore, the distance D between the ceramic layer 43 of the probe P with an insulating film layer implanted in each through hole 70 of the carrier 7 and the ceramic layer 43 of the adjacent probe P with an insulating film layer can be maintained at less than or equal to 50μm, or even less than or equal to 12μm. It can be seen that the probe P with an insulating film layer manufactured by the manufacturing method of the embodiment of the present invention can improve the success rate and yield rate of implantation.

In summary, the method for manufacturing a probe having an insulating film layer, the product thereof, the carrier jig T thereof and the method of using the probe can, during the ALD process, allow the first precursor, the second precursor and the third precursor to move from the opening 502 of the carrier box 5 to the chamber 501 along the transmission direction F through the carrier jig T, so as to transmit the precursors transmitted through the carriers 61. The inlet 610 and the transmission port 620 of each carrier 62 flow to and surround each probe body 3, thereby sequentially depositing each adhesive layer 41, insulating layer 42 and ceramic layer 43 with excellent coverage and uniform thickness on each probe body 3, which can not only increase production capacity but also meet the increasing demand for probe density year by year, and can also improve the success rate of needle implantation, so the purpose of this invention can be achieved.

However, the above is only an example of the implementation of the present invention, and it cannot be used to limit the scope of the implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the patent of the present invention.

3: Probe body

31: Surface

32: End

4: Insulation film layer

41: Adhesive layer

42: Insulation layer

43: Ceramic layer

P: Probe with insulating film layer

Claims (9)

A method for manufacturing a probe with an insulating film layer comprises the following steps in sequence: step (a), introducing a first precursor into a reaction chamber to deposit an adhesive layer surrounding and covering a surface of each probe body on a plurality of probe bodies on a carrier fixture disposed in the reaction chamber by atomic layer deposition; step (b), introducing a second precursor into the reaction chamber to deposit an adhesive layer on a surface of each probe body by atomic layer deposition; Depositing an insulating layer surrounding and covering each adhesive layer on each adhesive layer, each insulating layer having a dielectric constant greater than or equal to 3.9; and step (c), introducing a third precursor into the reaction chamber to deposit a ceramic layer surrounding and covering each insulating layer on each insulating layer by atomic layer deposition; wherein the support fixture includes a support box and at least one support assembly; wherein the support box includes a certain The invention discloses a container and two opening surrounding walls which are oppositely arranged and communicate with the container, wherein an inner ring surface of the surrounding wall is provided with at least one pair of platforms which protrude toward each other; wherein the at least one carrier assembly is detachably arranged on the at least one pair of platforms of the carrier box, and comprises at least one carrier in the container, the at least one carrier having a base, a transmission port which passes through the base up and down, and a pair of intermediate The pair of tracks are arranged on the base in a spaced relationship and facing each other, and the pair of tracks are used to accommodate the opposite ends of the probe bodies, so that the probe bodies can be placed on the base in a spaced relationship and suspended on the transmission port, so that the first front drive, the second front drive and the third front drive can move from one of the openings of the carrier box to the chamber along a transmission direction, so as to be transmitted through the transmission port and flow around the probe bodies. The method for manufacturing a probe with an insulating film layer as described in claim 1, wherein the total thickness of the adhesive layer, the insulating layer and the ceramic layer obtained after performing the step (a), the step (b) and the step (c) is less than or equal to 1000nm. A method for producing a probe with an insulating film layer as described in claim 1, wherein _, in the step (a), the adhesion layer is selected from AlN, TaN, _Al2O3 or _TiO2 , and has a thickness of less than 50nm; in the step (b), the insulating layer is selected from _Al2O3 , _HfO2 , _Si3N4 or _{SiO2 ,} and has a thickness of less than 800nm; in the step ( _c ) _, the ceramic layer is selected from _{Y2O3 , Al2O3} , _SiO2 or _TiO2 , and has a thickness of less than 200nm. A method for manufacturing a probe having an insulating film layer as described in claim 1, wherein in step (a) and step (c), the growth rate of each cycle is less than or equal to 0.3nm/cycle; and in step (b), the growth rate of each cycle is greater than or equal to 0.3nm/cycle. The method for manufacturing a probe having an insulating film layer as described in claim 4, wherein, when implementing the step (b), the concentration of the second precursor introduced into the reaction chamber is 1.5 to 3 times the concentration of the first precursor and the third precursor introduced when implementing the steps (a) and (c). A support fixture, suitable for implementing the manufacturing method as described in any one of claims 1 to 5 and used to support multiple probe bodies, comprising: a support box, including a surrounding wall defining a chamber and two openings arranged oppositely and communicating with the chamber, an inner ring surface of the surrounding wall is provided with at least one pair of platforms protruding toward each other; At least one carrier assembly, which can be detachably arranged on the at least one pair of platforms of the support box, and includes at least one carrier in the chamber, the at least one carrier having a base, a transmission port penetrating the base up and down, and a pair of spaced and oppositely arranged rails on the base, the pair of rails are used to accommodate the opposite ends of the probe bodies, so that the probe bodies can be spaced from each other on the base and suspended on the transmission port. The carrier fixture as described in claim 6 comprises a plurality of carrier assemblies, and the inner ring surface of the surrounding wall of the carrier box is provided with a plurality of pairs of platforms spaced apart from each other and protruding toward each other, and each carrier assembly is detachably arranged on each pair of platforms. A carrier fixture as described in claim 7, wherein each carrier assembly further includes a carrier plate, and each carrier assembly includes a plurality of carriers; each carrier plate is detachably mounted on each pair of platforms of the carrier box, and has a plurality of transmission ports that are spaced apart from each other and penetrate the carrier plate from top to bottom, and a plurality of positioning members distributed around each transmission port, each positioning member of each carrier plate is a positioning pin that protrudes upward from the carrier plate and a positioning hole that is recessed downward from the carrier plate. Each carrier also has a plurality of positioning members, the positioning member of each carrier is the other of a positioning pin protruding upward from each base and a positioning hole recessed downward from each base; the positioning members of each carrier of each carrier assembly can be respectively and correspondingly limited on the positioning members around each transmission port of each corresponding carrier, so that the transmission port of each carrier of each carrier assembly can be respectively and correspondingly connected to each transmission port of each corresponding carrier. A method for using a probe with an insulating film layer, comprising: implanting the probes with an insulating film layer produced by the method described in any one of claims 1 to 5 into a carrier having through holes arranged in an array; wherein the distance between the ceramic layer of the probe with an insulating film layer implanted in each through hole of the carrier and the ceramic layer of the adjacent probe with an insulating film layer is less than or equal to 50μm.

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