TWI865943B - Seed crystal, crystal pulling method and crystal pulling device - Google Patents
Seed crystal, crystal pulling method and crystal pulling device Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 230000007423 decrease Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 62
- 239000010703 silicon Substances 0.000 claims description 62
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 4
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 3
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本發明提供了一種晶種、拉晶方法及拉晶裝置，屬於半導體技術領域。晶種，包括：柱狀的晶種本體，晶種本體中摻雜有氫，晶種本體包括第一端部和第二端部；其中，第一端部設置有用於與晶種夾頭固定的凸緣結構；第二端部為錐形，在遠離第一端部的方向上，第二端部的直徑逐漸減小。The present invention provides a crystal seed, a crystal pulling method and a crystal pulling device, which belong to the field of semiconductor technology. The crystal seed comprises: a columnar crystal seed body doped with hydrogen, the crystal seed body comprising a first end and a second end; wherein the first end is provided with a flange structure for fixing with a crystal seed chuck; the second end is conical, and the diameter of the second end gradually decreases in a direction away from the first end.
Description
本發明為半導體技術領域，特別是指一種晶種、拉晶方法及拉晶裝置。 This invention belongs to the field of semiconductor technology, and in particular, refers to a seed crystal, a crystal pulling method, and a crystal pulling device.
隨著半導體矽晶圓品質的不斷提高，對拉晶過程中晶棒的晶體缺陷有了更高的管控要求，影響晶體缺陷的因素包括拉晶技術參數，用優化的技術參數去拉晶能製得品質更好的晶棒。相關技術中拉晶技術過程包括：化料(Melting)-穩溫(STB)-浸漬(Dip)-縮徑(Necking)-放肩(Shoulder)-轉肩(Over Shoulder)-等徑(Body)-收尾(Tail)等技術。其中Necking階段很關鍵，其主要目的是消除晶種浸入矽溶液時因熱應力而引起的差排，通過Necking小尺寸細頸可以將差排排出晶體，使得在放肩階段及後續Body階段實現無差排生長。但隨著半導體拉晶技術的不斷反覆運算更新，需要在成本和經濟效益上更具競爭力，因此需要拉製直徑更大(12英寸以上)，重量更重的晶棒(1000kg以上)。Necking的細頸已無法承受如此大的重量，需要開發一種無Necking拉晶技術。 With the continuous improvement of the quality of semiconductor silicon wafers, there are higher control requirements for the crystal defects of the crystal rods during the crystal pulling process. The factors affecting the crystal defects include the crystal pulling technical parameters. Using optimized technical parameters to pull crystals can produce better quality crystal rods. The crystal pulling process includes: melting (Melting) - temperature stabilization (STB) - immersion (Dip) - diameter reduction (Necking) - shoulder release (Shoulder) - shoulder rotation (Over Shoulder) - equal diameter (Body) - tailing (Tail) and other technologies. Among them, the Necking stage is very critical. Its main purpose is to eliminate the dislocation caused by thermal stress when the seed crystal is immersed in the silicon solution. The dislocation can be discharged from the crystal through the small size and fine neck of Necking, so that dislocation-free growth can be achieved in the shoulder release stage and the subsequent Body stage. However, with the continuous iteration of semiconductor crystal pulling technology, it is necessary to be more competitive in terms of cost and economic benefits, so it is necessary to pull crystal rods with larger diameters (over 12 inches) and heavier weights (over 1000kg). The thin neck of the necking can no longer bear such a large weight, and a neckless crystal pulling technology needs to be developed.
本發明要解決的技術問題是提供一種晶種、拉晶方法及拉晶裝置，能夠實現生成大直徑、大重量的晶棒。 The technical problem to be solved by the present invention is to provide a crystal seed, a crystal pulling method and a crystal pulling device that can realize the generation of large diameter and heavy weight crystal rods.
為解決上述技術問題，本發明提供技術方案如下：一方面，本發明提供一種晶種，包括：柱狀的晶種本體，晶種本體中摻雜有氫，晶種本體包括第一端部和第二端部；其中，第一端部設置有用於與晶種夾頭固定的凸緣結構；第二端部為錐形，在遠離第一端部的方向上，第二端部的直徑逐漸減小。 In order to solve the above technical problems, the present invention provides the following technical solutions: On the one hand, the present invention provides a seed, comprising: a columnar seed body, the seed body is doped with hydrogen, and the seed body comprises a first end and a second end; wherein the first end is provided with a flange structure for fixing with a seed chuck; the second end is conical, and the diameter of the second end gradually decreases in the direction away from the first end.
一些實施例中，晶種本體的最大直徑為8mm，最小直徑為2mm。 In some embodiments, the maximum diameter of the seed body is 8 mm and the minimum diameter is 2 mm.
一些實施例中，晶種本體中的氫含量為3E13~2E14 atom/cm3。 In some embodiments, the hydrogen content in the seed crystal bulk is 3E 13 -2E 14 atom/cm 3 .
本發明的實施例還提供了一種拉晶方法，包括：在第一階段，將如上所述的晶種在矽溶液液面上方第一位置處進行烘烤，使得晶種的溫度升高至550℃以上；在第二階段，將晶種下降至矽溶液液面上方第二位置處進行烘烤，使得晶種的溫度升高至1000℃以上；在第三階段，將晶種的第二端部浸入矽溶液中；在第四階段，提拉晶種。 The embodiment of the present invention also provides a crystal pulling method, comprising: in the first stage, baking the seed crystal as described above at a first position above the silicon solution surface, so that the temperature of the seed crystal is increased to above 550°C; in the second stage, lowering the seed crystal to a second position above the silicon solution surface for baking, so that the temperature of the seed crystal is increased to above 1000°C; in the third stage, immersing the second end of the seed crystal in the silicon solution; in the fourth stage, pulling the seed crystal.
一些實施例中，第一階段的持續時間為1~2小時，第一位置與矽溶液液面的距離為20mm~30mm；和/或第二階段的持續時間為2.5~3.5小時，第二位置與矽溶液液面的距離為2mm~5mm；和/或第三階段的持續時間為5~6小時。 In some embodiments, the duration of the first stage is 1 to 2 hours, and the distance between the first position and the silicon solution surface is 20 mm to 30 mm; and/or the duration of the second stage is 2.5 to 3.5 hours, and the distance between the second position and the silicon solution surface is 2 mm to 5 mm; and/or the duration of the third stage is 5 to 6 hours.
一些實施例中，在第三階段，將第二端部的一半浸入矽溶液中。 In some embodiments, in the third stage, half of the second end is immersed in a silicon solution.
本發明的實施例還提供了一種拉晶裝置，包括：烘烤元件，用於在第一階段，將如上所述的晶種在矽溶液液面上方第一位置處進行烘烤，使得晶種的溫度升高至550℃以上；在第二階段，將晶種下降至矽溶液液面上方第二位置處進行烘烤，使得晶種的溫度升高至1000℃以上；提拉元件，用於在第三階段，將晶種的第二端部浸入矽溶液中；在第四階段，提拉晶種。 The embodiment of the present invention also provides a crystal pulling device, including: a baking element, used to bake the seed crystal as described above at a first position above the silicon solution surface in the first stage, so that the temperature of the seed crystal is increased to above 550°C; in the second stage, the seed crystal is lowered to a second position above the silicon solution surface for baking, so that the temperature of the seed crystal is increased to above 1000°C; a pulling element, used to immerse the second end of the seed crystal in the silicon solution in the third stage; in the fourth stage, pull the seed crystal.
一些實施例中，第一階段的持續時間為1~2小時，第一位置與矽溶液液面的距離為20mm~30mm；和/或第二階段的持續時間為2.5~3.5小時，第二位置與矽溶液液面的距離為2mm~5mm；和/或第三階段的持續時間為5~6小時。 In some embodiments, the duration of the first stage is 1 to 2 hours, and the distance between the first position and the silicon solution surface is 20 mm to 30 mm; and/or the duration of the second stage is 2.5 to 3.5 hours, and the distance between the second position and the silicon solution surface is 2 mm to 5 mm; and/or the duration of the third stage is 5 to 6 hours.
一些實施例中，提拉元件用於在第三階段，將第二端部的一半浸入矽溶液中。 In some embodiments, the pulling element is used to immerse half of the second end portion in the silicon solution during the third stage.
本發明的實施例具有以下有益效果：上述方案中，當晶種浸入矽溶液時，晶種會因熱應力作用在接觸面產生差排，該差排有向晶種體內延伸的趨勢，但本實施例的晶種中氫可與差排結合，形成氫差排復合體，該結構不具備電活性，大部分將被釘紮住，極少量的差排可以經晶種的倒錐形結構排到表面，在晶種錐形的下半部分完全溶解後進行提拉，提拉過程中將不會產生差排，可直接進行Shoulder操作，能夠實現生成大直徑，投料量在1000kg以上的晶棒。 The embodiment of the present invention has the following beneficial effects: In the above scheme, when the seed is immersed in the silicon solution, the seed will generate dislocations on the contact surface due to the thermal stress, and the dislocations tend to extend into the seed body, but the hydrogen in the seed of this embodiment can combine with the dislocations to form a hydrogen dislocation complex, which is not electrically active and most of it will be pinned. A very small amount of dislocations can be discharged to the surface through the inverted cone structure of the seed. After the lower half of the seed cone is completely dissolved, it is pulled. No dislocations will be generated during the pulling process, and the shoulder operation can be performed directly, which can achieve the generation of large diameter crystal rods with a feed amount of more than 1000kg.
為使本發明的實施例要解決的技術問題、技術方案和優點更加清楚，下面將結合附圖及具體實施例進行詳細描述。 In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will be described in detail with reference to the attached drawings and specific embodiments.
為使本發明實施例的目的、技術方案和優點更加清楚，下面將結合本發明實施例的附圖，對本發明實施例的技術方案進行清楚、完整地描述。顯 然，所描述的實施例是本發明的一部分實施例，而不是全部的實施例。基於所描述的本發明的實施例，本領域具通常知識者所獲得的所有其他實施例，都屬於本發明保護的範圍。 In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be described clearly and completely in conjunction with the attached drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by a person of ordinary knowledge in the field are within the scope of protection of the present invention.
本發明實施例提供一種晶種、拉晶方法及拉晶裝置，能夠實現生成大直徑、大重量的晶棒。 The embodiment of the present invention provides a crystal seed, a crystal pulling method and a crystal pulling device, which can realize the generation of a large diameter and heavy weight crystal rod.
本發明實施例提供一種晶種1，如圖1所示，包括：柱狀的晶種本體，晶種本體中摻雜有氫，晶種本體包括第一端部11和第二端部12；其中，第一端部11設置有用於與晶種夾頭固定的凸緣結構；第二端部12為錐形，在遠離第一端部11的方向上，第二端部12的直徑逐漸減小。 The embodiment of the present invention provides a seed 1, as shown in FIG1, comprising: a columnar seed body doped with hydrogen, the seed body comprising a first end 11 and a second end 12; wherein the first end 11 is provided with a flange structure for fixing with a seed chuck; the second end 12 is conical, and the diameter of the second end 12 gradually decreases in the direction away from the first end 11.
一些實施例中，晶種本體的最大直徑為8mm，最小直徑為2mm，即第二端部12的最大直徑為8mm，最小直徑為2mm。 In some embodiments, the maximum diameter of the seed body is 8 mm and the minimum diameter is 2 mm, that is, the maximum diameter of the second end 12 is 8 mm and the minimum diameter is 2 mm.
一些實施例中，晶種本體中的氫含量可以為3E13~2E14 atom/cm3，在氫含量低於3E13 atom/cm3時，差排不能完全與氫反應生成複合體，釘扎作用不顯著；當氫含量大於2E14 atom/cm3時，過多的氫會誘導產生新缺陷(Hydrogen Doped Paticle，HDP)，該缺陷會影響晶種的強度。 In some embodiments, the hydrogen content in the seed crystal body can be 3E 13 ~2E 14 atom/cm 3. When the hydrogen content is lower than 3E 13 atom/cm 3 , the dislocation cannot completely react with hydrogen to form a complex, and the pinning effect is not significant. When the hydrogen content is greater than 2E 14 atom/cm 3 , excessive hydrogen will induce the generation of new defects (Hydrogen Doped Paticle, HDP), which will affect the strength of the seed crystal.
本發明的實施例還提供了一種拉晶方法，如圖2所示，包括：步驟101：在第一階段，將如上所述的晶種在矽溶液液面上方第一位置處進行烘烤，使得晶種的溫度升高至550℃以上；步驟102：在第二階段，將晶種下降至矽溶液液面上方第二位置處進行烘烤，使得晶種的溫度升高至1000℃以上；步驟103：在第三階段，將晶種的第二端部浸入矽溶液中；步驟104：在第四階段，提拉晶種。 The embodiment of the present invention also provides a crystal pulling method, as shown in FIG2, comprising: step 101: in the first stage, the seed crystal as described above is baked at a first position above the silicon solution surface, so that the temperature of the seed crystal is increased to above 550°C; step 102: in the second stage, the seed crystal is lowered to a second position above the silicon solution surface for baking, so that the temperature of the seed crystal is increased to above 1000°C; step 103: in the third stage, the second end of the seed crystal is immersed in the silicon solution; step 104: in the fourth stage, the seed crystal is pulled.
本實施例中，當晶種浸入矽溶液時，晶種會因熱應力作用在接觸面產生差排，差排有向晶種體內延伸的趨勢，但本實施例的晶種中氫可與差排結合，形成氫差排複合體，該結構不具備電活性，大部分將被釘扎住，極少量的差排可以經晶種的倒錐形結構排到表面，在晶種錐形的下半部分完全溶解後進行提拉，提拉過程中將不會產生差排，可直接進行Shoulder操作，能夠實現生成大直徑，投料量在1000kg以上的晶棒，具有良好的應用前景。 In this embodiment, when the seed is immersed in the silicon solution, the seed will generate dislocations on the contact surface due to thermal stress, and the dislocations tend to extend into the seed body. However, hydrogen in the seed of this embodiment can combine with dislocations to form a hydrogen dislocation complex. This structure is not electrically active and most of it will be pinned. A very small amount of dislocations can be discharged to the surface through the inverted cone structure of the seed. After the lower half of the seed cone is completely dissolved, it is pulled. No dislocations will be generated during the pulling process, and the shoulder operation can be performed directly. It can achieve the generation of large diameter crystal rods with a feed amount of more than 1000kg, and has good application prospects.
一些實施例中，第一階段的持續時間可以為1~2小時，第一位置與矽溶液液面的距離可以為20mm~30mm；和/或第二階段的持續時間可以為2.5~3.5小時，第二位置與矽溶液液面的距離為2mm~5mm；和/或第三階段的持續時間可以為5~6小時；這樣可以逐步進行穩溫，避免過大的熱應力引起大量差排釋放。 In some embodiments, the duration of the first stage can be 1-2 hours, and the distance between the first position and the silicon solution surface can be 20mm-30mm; and/or the duration of the second stage can be 2.5-3.5 hours, and the distance between the second position and the silicon solution surface can be 2mm-5mm; and/or the duration of the third stage can be 5-6 hours; in this way, the temperature can be gradually stabilized to avoid excessive thermal stress causing a large amount of differential discharge release.
一些實施例中，在第三階段，將第二端部的一半浸入矽溶液中。 In some embodiments, in the third stage, half of the second end is immersed in a silicon solution.
如圖1所示，單晶矽拉晶爐7包括爐體，爐體內設置有坩堝和加熱器，坩堝連接有坩堝軸6，坩堝包括用於盛裝矽熔體的石英坩堝4和包裹在石英坩堝4外的石墨坩堝5，以及位於石墨坩堝5上方的晶種夾頭，在拉晶過程中，多晶矽被裝進石英坩堝4內加熱熔化變為矽溶液3，把晶種1固定在晶種夾頭的下端，拉製單晶矽棒時，首先將晶種1與矽溶液3熔接，開始進入引晶階段；接著通過調整矽溶液3的溫度、晶棒2向上的提升速度等，使單晶矽經過放肩階段和轉肩階段不斷長大，最終拉製出晶棒2。 As shown in FIG1 , a single crystal silicon pulling furnace 7 includes a furnace body, a crucible and a heater are arranged in the furnace body, the crucible is connected to a crucible shaft 6, the crucible includes a quartz crucible 4 for containing silicon melt, a graphite crucible 5 wrapped outside the quartz crucible 4, and a seed chuck located above the graphite crucible 5. During the crystal pulling process, polycrystalline silicon is loaded into the quartz crucible 4 and heated. The heat melts and turns into silicon solution 3. The seed crystal 1 is fixed at the lower end of the seed crystal chuck. When pulling a single crystal silicon rod, the seed crystal 1 is first welded with the silicon solution 3 to start the seeding stage. Then, by adjusting the temperature of the silicon solution 3 and the upward lifting speed of the crystal rod 2, the single crystal silicon is continuously grown through the shoulder release stage and the shoulder rotation stage, and finally the crystal rod 2 is pulled out.
一具體示例中，在拉晶過程中，首先將晶種1在矽溶液3液面往上20mm~30mm處進行烘烤，使之溫度初步升高至550℃以上，持續1.5h，其次再將晶種1下降至距液面2mm~5mm處進行烘烤，使之溫度達到1000℃以上，持續3h， 之後將晶種1快速浸入至矽溶液3中，使得晶種1錐形部分的一半沒入矽溶液3中。當晶種1浸入矽溶液3的液面時，晶種1會因熱應力作用在接觸面產生差排，差排有向晶種體內延伸的趨勢，但晶種1中的氫可與差排結合，形成氫差排復合體，該結構不具備電活性，大部分將被釘扎住，極少量的差排可以經倒第二端部12的錐形結構排到表面，這樣在該狀態下Dip5~6h，使晶種1錐形的下半部分完全溶解後進行提拉，提拉過程中將不會產差排，可直接進行Shoulder操作，可以很好地生成大直徑，投料量在1000kg以上的晶棒，本實施例中，整個拉晶技術流程為化料(Melting)-一次穩溫(550℃/1.5h)-二次穩溫(1000℃/3h)-無差排浸漬(Dip)-放肩(Shoulder)-轉肩(Over Shoulder)-等徑(Body)-收尾(Tail)，其中，h為小時。 In a specific example, during the crystal pulling process, the seed crystal 1 is first baked 20mm~30mm above the liquid surface of the silicon solution 3, so that its temperature is initially raised to above 550℃, and the temperature is continued for 1.5h. Then, the seed crystal 1 is lowered to 2mm~5mm from the liquid surface and baked, so that its temperature reaches above 1000℃, and the temperature is continued for 3h. After that, the seed crystal 1 is quickly immersed in the silicon solution 3, so that half of the conical part of the seed crystal 1 is submerged in the silicon solution 3. When the seed crystal 1 is immersed in the liquid surface of the silicon solution 3, the seed crystal 1 will generate dislocations on the contact surface due to the thermal stress. The dislocations tend to extend into the seed crystal body, but the hydrogen in the seed crystal 1 can combine with the dislocations to form a hydrogen dislocation complex. This structure is not electrically active and most of it will be pinned. A very small amount of dislocations can be discharged to the surface through the conical structure of the second end 12. In this state, Dip for 5~6h, so that the lower half of the cone of the seed crystal 1 is completely dissolved and then proceed. During the pulling process, no differential row will be produced, and the shoulder operation can be directly performed. A large diameter crystal rod with a feed amount of more than 1000kg can be well generated. In this embodiment, the entire crystal pulling technology process is melting (Melting) - primary temperature stabilization (550℃/1.5h) - secondary temperature stabilization (1000℃/3h) - differential row immersion (Dip) - shoulder release (Shoulder) - shoulder rotation (Over Shoulder) - equal diameter (Body) - tailing (Tail), where h is hours.
本發明的實施例還提供了一種拉晶裝置，包括：烘烤元件，用於在第一階段，將如上所述的晶種在矽溶液液面上方第一位置處進行烘烤，使得晶種的溫度升高至550℃以上；在第二階段，將晶種下降至矽溶液液面上方第二位置處進行烘烤，使得晶種的溫度升高至1000℃以上；提拉元件，用於在第三階段，將晶種的第二端部浸入矽溶液中；在第四階段，提拉晶種。 The embodiment of the present invention also provides a crystal pulling device, including: a baking element, used to bake the seed crystal as described above at a first position above the silicon solution surface in the first stage, so that the temperature of the seed crystal is increased to above 550°C; in the second stage, the seed crystal is lowered to a second position above the silicon solution surface for baking, so that the temperature of the seed crystal is increased to above 1000°C; a pulling element, used to immerse the second end of the seed crystal in the silicon solution in the third stage; in the fourth stage, pull the seed crystal.
一些實施例中，第一階段的持續時間為1~2小時，第一位置與矽溶液液面的距離為20mm~30mm；和/或第二階段的持續時間為2.5~3.5小時，第二位置與矽溶液液面的距離為2mm~5mm；和/或第三階段的持續時間為5~6小時。 In some embodiments, the duration of the first stage is 1 to 2 hours, and the distance between the first position and the silicon solution surface is 20 mm to 30 mm; and/or the duration of the second stage is 2.5 to 3.5 hours, and the distance between the second position and the silicon solution surface is 2 mm to 5 mm; and/or the duration of the third stage is 5 to 6 hours.
一些實施例中，提拉元件用於在第三階段，將第二端部的一半浸入矽溶液中。 In some embodiments, the pulling element is used to immerse half of the second end portion in the silicon solution during the third stage.
本實施例中，當晶種浸入矽溶液時，晶種會因熱應力作用在接觸面產生差排，該差排有向晶種體內延伸的趨勢，但本實施例的晶種中氫可與差排 結合，形成氫差排複合體，該結構不具備電活性，大部分將被釘扎住，極少量的差排可以經晶種的倒錐形結構排到表面，在晶種錐形的下半部分完全溶解後進行提拉，提拉過程中將不會產生差排，可直接進行Shoulder操作，能夠實現生成大直徑，投料量在1000kg以上的晶棒，具有良好的應用前景。 In this embodiment, when the seed is immersed in the silicon solution, the seed will generate dislocations on the contact surface due to thermal stress, and the dislocations tend to extend into the seed body. However, hydrogen in the seed of this embodiment can combine with dislocations to form a hydrogen dislocation complex. This structure is not electrically active and most of it will be pinned. A very small amount of dislocations can be discharged to the surface through the inverted cone structure of the seed. After the lower half of the seed cone is completely dissolved, it can be pulled. No dislocations will be generated during the pulling process, and the shoulder operation can be performed directly. It can achieve the generation of large diameter crystal rods with a feed amount of more than 1000kg, and has good application prospects.
一些實施例中，第一階段的持續時間為1~2小時，第一位置與矽溶液液面的距離為20mm~30mm；和/或第二階段的持續時間為2.5~3.5小時，第二位置與矽溶液液面的距離為2mm~5mm；和/或第三階段的持續時間為5~6小時；這樣可以逐步進行穩溫，避免過大的熱應力引起大量差排釋放。 In some embodiments, the duration of the first stage is 1 to 2 hours, and the distance between the first position and the silicon solution surface is 20 mm to 30 mm; and/or the duration of the second stage is 2.5 to 3.5 hours, and the distance between the second position and the silicon solution surface is 2 mm to 5 mm; and/or the duration of the third stage is 5 to 6 hours; in this way, the temperature can be gradually stabilized to avoid excessive thermal stress causing a large amount of differential discharge release.
一些實施例中，提拉元件用於在第三階段，將第二端部的一半浸入矽溶液中。 In some embodiments, the pulling element is used to immerse half of the second end portion in the silicon solution during the third stage.
如圖1所示，單晶矽拉晶爐7包括爐體，爐體內設置有坩堝和加熱器，坩堝連接有坩堝軸6，坩堝包括用於盛裝矽熔體的石英坩堝4和包裹在石英坩堝4外的石墨坩堝5，以及位於石墨坩堝上方的晶種夾頭，在拉晶過程中，多晶矽被裝進石英坩堝4內加熱熔化變為矽溶液3，把晶種1固定在晶種夾頭的下端，拉製單晶矽棒時，首先將晶種1與矽溶液3熔接，開始進入引晶階段；接著通過調整矽溶液3的溫度、晶棒2向上的提升速度等，使單晶矽經過放肩階段和轉肩階段不斷長大，最終拉製出晶棒2。 As shown in FIG1 , a single crystal silicon pulling furnace 7 includes a furnace body, a crucible and a heater are arranged in the furnace body, the crucible is connected to a crucible shaft 6, the crucible includes a quartz crucible 4 for containing silicon melt, a graphite crucible 5 wrapped outside the quartz crucible 4, and a seed chuck located above the graphite crucible. During the crystal pulling process, polycrystalline silicon is loaded into the quartz crucible 4 and heated. The heat melts and turns into silicon solution 3. The seed crystal 1 is fixed at the lower end of the seed crystal chuck. When pulling a single crystal silicon rod, the seed crystal 1 is first welded with the silicon solution 3 to start the seeding stage. Then, by adjusting the temperature of the silicon solution 3 and the upward lifting speed of the crystal rod 2, the single crystal silicon is continuously grown through the shoulder release stage and the shoulder rotation stage, and finally the crystal rod 2 is pulled out.
一具體示例中，在拉晶過程中，首先將晶種1在矽溶液3液面往上20mm~30mm處進行烘烤，使之溫度初步升高至550℃以上，持續1.5h，其次再將晶種1下降至距液面2mm~5mm處進行烘烤，使之溫度達到1000℃以上，持續3h，之後將晶種1快速浸入至矽溶液3中，使得晶種1錐形部分的一半沒入矽溶液3中。當晶種1浸入矽溶液3的液面時，晶種1會因熱應力作用在接觸面產生差排，該差 排有向晶種體內延伸的趨勢，但晶種1中的氫可與差排結合，形成氫差排復合體，該結構不具備電活性，大部分將被釘扎住，極少量的差排可以經倒第二端部12的錐形結構排到表面，這樣在該狀態下Dip5~6h，使晶種1錐形的下半部分完全溶解後進行提拉，提拉過程中將不會產差排，可直接進行Shoulder操作，可以很好地生成大直徑，投料量在1000kg以上的晶棒，本實施例中，整個拉晶技術流程為化料(Melting)-一次穩溫(550℃/1.5h)-二次穩溫(1000℃/3h)-無差排浸漬(Dip)-放肩(Shoulder)-轉肩(Over Shoulder)-等徑(Body)-收尾(Tail)。 In a specific example, in the crystal pulling process, the seed crystal 1 is first baked 20mm~30mm above the liquid surface of the silicon solution 3, so that its temperature is initially raised to above 550℃, which is continued for 1.5h. Then the seed crystal 1 is lowered to 2mm~5mm from the liquid surface and baked so that its temperature reaches above 1000℃, which is continued for 3h. Thereafter, the seed crystal 1 is quickly immersed in the silicon solution 3, so that half of the conical part of the seed crystal 1 is submerged in the silicon solution 3. When the seed crystal 1 is immersed in the liquid surface of the silicon solution 3, the seed crystal 1 will generate a dislocation on the contact surface due to the thermal stress. The dislocation has a tendency to extend into the seed crystal body, but the hydrogen in the seed crystal 1 can combine with the dislocation to form a hydrogen dislocation complex. This structure is not electrically active and most of it will be pinned. A very small amount of dislocation can be discharged to the surface through the conical structure of the second end 12. In this state, Dip for 5~6h, so that the lower half of the cone of the seed crystal 1 is completely dissolved. During the pulling process, no differential row will be produced, and the shoulder operation can be directly performed, which can well generate large diameter crystal rods with a feed amount of more than 1000kg. In this embodiment, the entire crystal pulling technology process is melting (Melting) - primary temperature stabilization (550℃/1.5h) - secondary temperature stabilization (1000℃/3h) - differential row immersion (Dip) - shoulder release (Shoulder) - shoulder rotation (Over Shoulder) - equal diameter (Body) - tail (Tail).
需要說明，本說明書中的各個實施例均採用遞進的方式描述，各個實施例之間相同相似的部分互相參見即可，每個實施例重點說明的都是與其他實施例的不同之處。尤其，對於實施例而言，由於其基本相似於產品實施例，所以描述得比較簡單，相關之處參見產品實施例的部分說明即可。 It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiments.
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域的具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以所述權利要求的保護範圍為準。 The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by any person with ordinary knowledge in the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.
1:晶種 1: Seedlings
11:第一端部 11: First end
12:第二端部 12: Second end
2:晶棒 2: Crystal rod
3:矽溶液 3: Silicon solution
4:石英坩堝 4: Quartz crucible
5:石墨坩堝 5: Graphite crucible
6:坩堝軸 6: Crucible shaft
7:單晶矽拉晶爐 7: Single crystal silicon pulling furnace
101~104:步驟流程 101~104: Steps
圖1為本發明實施例進行拉晶的示意圖；圖2為本發明實施例拉晶方法的流程示意圖。 Figure 1 is a schematic diagram of crystal pulling according to an embodiment of the present invention; Figure 2 is a schematic diagram of the process of the crystal pulling method according to an embodiment of the present invention.
1:晶種 1: Seedlings
11:第一端部 11: First end
12:第二端部 12: Second end
2:晶棒 2: Crystal rod
3:矽溶液 3: Silicon solution
4:石英坩堝 4: Quartz crucible
5:石墨坩堝 5: Graphite crucible
6:坩堝軸 6: Crucible shaft
7:單晶矽拉晶爐 7: Single crystal silicon pulling furnace
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