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TWI860288B - Wiring board and manufacturing method thereof - Google Patents

Wiring board and manufacturing method thereof Download PDF

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Publication number
TWI860288B
TWI860288B TW108107555A TW108107555A TWI860288B TW I860288 B TWI860288 B TW I860288B TW 108107555 A TW108107555 A TW 108107555A TW 108107555 A TW108107555 A TW 108107555A TW I860288 B TWI860288 B TW I860288B
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TW
Taiwan
Prior art keywords
wiring
insulating layer
layer
thickness direction
wiring pattern
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TW108107555A
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Chinese (zh)
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TW201939631A (en
Inventor
奧村圭佑
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日商日東電工股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/04Fixed inductances of the signal type with magnetic core
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

配線基板之製造方法具備:配線形成步驟,其係於第1絕緣層之厚度方向一側形成配線圖案;電沈積步驟,其係藉由電沈積而以第2絕緣層被覆配線圖案;以及磁性層配置步驟,其係於第1絕緣層及第2絕緣層之厚度方向一側配置磁性層。The manufacturing method of the wiring substrate comprises: a wiring forming step, which is to form a wiring pattern on one side of the first insulating layer in the thickness direction; an electro-deposition step, which is to cover the wiring pattern with a second insulating layer by electro-deposition; and a magnetic layer configuration step, which is to configure the magnetic layer on one side of the first insulating layer and the second insulating layer in the thickness direction.

Description

配線基板及其製造方法Wiring board and manufacturing method thereof

本發明係關於一種配線基板及其製造方法。The present invention relates to a wiring board and a manufacturing method thereof.

已知電感器搭載於電子機器等,且被用作電壓轉換構件等被動元件。Inductors are known to be mounted on electronic devices and used as passive components such as voltage conversion components.

例如,提出有於線圈之上表面及/或下表面積層有使扁平狀或針狀之軟磁性金屬粉末分散於樹脂材料中所成之各向異性複合磁性薄片之可撓性電感器(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]For example, a flexible inductor is proposed in which anisotropic composite magnetic sheets formed by dispersing flat or needle-shaped soft magnetic metal powder in a resin material are layered on the upper surface and/or lower surface of a coil (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document]

專利文獻1:日本專利特開2009-9985號公報Patent document 1: Japanese Patent Publication No. 2009-9985

[發明所欲解決之問題][The problem the invention is trying to solve]

然,於專利文獻1之電感器中,各向異性複合磁性薄片直接接觸於線圈。因此,會產生如下不良情況,即,經由各向異性複合磁性薄片內之多個軟磁性金屬粉末,而構成線圈之沿面方向相鄰之配線部彼此短路。However, in the inductor of Patent Document 1, the anisotropic composite magnetic sheet is in direct contact with the coil, which may cause a disadvantage that adjacent wiring portions constituting the coil in the plane direction are short-circuited via a plurality of soft magnetic metal powders in the anisotropic composite magnetic sheet.

因此,研究了藉由以絕緣性覆蓋層膜被覆配線部,而使配線部不與各向異性複合磁性薄片直接接觸。具體而言,可列舉如下方法:將配線部52配置於基底絕緣層51之上表面,繼而,以覆蓋層膜53被覆配線部52,最後自覆蓋層膜53之上側配置磁性薄片54(參照圖15)。Therefore, a method of preventing the wiring portion from directly contacting the anisotropic composite magnetic sheet by covering the wiring portion with an insulating cover film has been studied. Specifically, the following method can be cited: the wiring portion 52 is arranged on the upper surface of the base insulating layer 51, then the wiring portion 52 is covered with a cover film 53, and finally the magnetic sheet 54 is arranged from the upper side of the cover film 53 (see FIG. 15).

然而,於該方法中,於相鄰之配線部52之間,以使該等配線部52連續之方式配置覆蓋層膜53。因此,於相鄰之配線部52之間,於厚度方向(上下方向)上存在未配置軟磁性金屬粉末之部位55。其結果,會產生電感下降之不良情況。However, in this method, the cover film 53 is disposed between adjacent wiring portions 52 so that the wiring portions 52 are continuous. Therefore, between adjacent wiring portions 52, there is a portion 55 where the soft magnetic metal powder is not disposed in the thickness direction (vertical direction). As a result, the inductance decreases.

本發明提供一種能夠抑制配線部間之短路,且電感良好之配線基板及其製造方法。 [解決問題之技術手段]The present invention provides a wiring substrate and a manufacturing method thereof that can suppress short circuits between wiring parts and has good inductance. [Technical means for solving the problem]

本發明[1]包含一種配線基板之製造方法,其具備:配線形成步驟,其係於第1絕緣層之厚度方向一側形成配線圖案;電沈積步驟,其係藉由電沈積而以第2絕緣層被覆上述配線圖案;以及磁性層配置步驟,其係於上述第1絕緣層及上述第2絕緣層之厚度方向一側配置磁性層。The present invention [1] includes a method for manufacturing a wiring substrate, which comprises: a wiring formation step, which is to form a wiring pattern on one side of a first insulating layer in a thickness direction; an electroplating step, which is to cover the wiring pattern with a second insulating layer by electroplating; and a magnetic layer configuration step, which is to configure a magnetic layer on one side of the first insulating layer and the second insulating layer in a thickness direction.

於該配線基板之製造方法中,由於藉由電沈積而將第2絕緣層被覆於配線圖案,故而能夠抑制配線圖案直接接觸於磁性層。因此,能夠抑制配線圖案之短路。In the manufacturing method of the wiring board, since the second insulating layer is coated on the wiring pattern by electro-deposition, it is possible to suppress the wiring pattern from directly contacting the magnetic layer. Therefore, it is possible to suppress the short circuit of the wiring pattern.

又,於該配線基板之製造方法中,由於藉由電沈積而將第2絕緣層被覆於配線圖案,故而可將第2絕緣層以使構成配線圖案之複數個配線部之各者於彼此相鄰之配線部間不連續之方式被覆於配線圖案。因此,可於配線圖案之間(即,相鄰之配線部之間),遍及厚度方向全體地配置磁性層。因此,能夠使配線基板之電感提高。Furthermore, in the manufacturing method of the wiring board, since the second insulating layer is coated on the wiring pattern by electro-deposition, the second insulating layer can be coated on the wiring pattern in such a manner that each of the plurality of wiring sections constituting the wiring pattern is not continuous between adjacent wiring sections. Therefore, the magnetic layer can be arranged throughout the thickness direction between the wiring patterns (i.e., between adjacent wiring sections). Therefore, the inductance of the wiring board can be improved.

又,於該配線基板之製造方法中,由於藉由電沈積而將第2絕緣層被覆於配線圖案,故而能夠將第2絕緣層較薄地且均勻地並且確實地被覆於配線圖案之表面。因此,能夠使磁性層與配線圖案之距離接近。因此,能夠使配線基板之電感提高。Furthermore, in the manufacturing method of the wiring board, since the second insulating layer is coated on the wiring pattern by electro-deposition, the second insulating layer can be coated on the surface of the wiring pattern thinly, uniformly and reliably. Therefore, the distance between the magnetic layer and the wiring pattern can be shortened. Therefore, the inductance of the wiring board can be improved.

本發明[2]包含如[1]之配線基板之製造方法,其中上述配線形成步驟係藉由減成法形成上述配線圖案之步驟。The present invention [2] includes a method for manufacturing a wiring substrate as described in [1], wherein the wiring forming step is a step of forming the wiring pattern by a subtractive method.

於該配線基板之製造方法中,能夠藉由減成法形成配線圖案,因此與加成法相比,能夠於短時間內製造配線基板。又,能夠製造配線厚度較厚之配線基板,而能夠流動大電流。In the manufacturing method of the wiring board, a wiring pattern can be formed by a subtractive method, so the wiring board can be manufactured in a shorter time than the additive method. In addition, a wiring board with thicker wiring can be manufactured, and a large current can flow.

本發明[3]包含如[1]或[2]之配線基板之製造方法,其中上述電沈積步驟包含經由沿厚度方向投影時與上述配線圖案重疊之上述第1絕緣層之貫通孔,對上述配線圖案供電之步驟。The present invention [3] includes a method for manufacturing a wiring board as described in [1] or [2], wherein the above-mentioned electroplating step includes a step of supplying electricity to the above-mentioned wiring pattern through a through hole in the above-mentioned first insulating layer that overlaps with the above-mentioned wiring pattern when projected along the thickness direction.

於該配線基板之製造方法中,經由第1絕緣層之貫通孔對配線圖案自其厚度方向另一面供電,因此能夠以第2絕緣層被覆配線圖案之厚度方向一面及側面之整個面。因此,能夠更確實地抑制配線圖案接觸於磁性層。In the manufacturing method of the wiring board, power is supplied to the wiring pattern from the other side in the thickness direction through the through hole of the first insulating layer, so that the second insulating layer can cover the entire surface of the wiring pattern in the thickness direction and the side surface. Therefore, it is possible to more reliably suppress the wiring pattern from contacting the magnetic layer.

本發明[4]包含如[3]之配線基板之製造方法,其中上述第1絕緣層具備用以於上述貫通孔之厚度方向一側形成上述配線圖案之定位部。The present invention [4] includes a method for manufacturing a wiring board as described in [3], wherein the first insulating layer has a positioning portion for forming the wiring pattern on one side of the through hole in the thickness direction.

於該配線基板之製造方法中,由於第1絕緣層具備定位部,故而能夠以定位部作為記號,而於貫通孔之厚度方向一側準確地形成配線圖案。因此,能夠藉由自貫通孔之供電,而更確實地以第2絕緣層被覆配線圖案。In the manufacturing method of the wiring board, since the first insulating layer has a positioning portion, the wiring pattern can be accurately formed on one side of the through hole in the thickness direction using the positioning portion as a mark. Therefore, the wiring pattern can be more reliably covered with the second insulating layer by supplying power from the through hole.

本發明[5]包含如[1]至[4]中任一項之配線基板之製造方法,其中上述配線圖案具備銅配線。The present invention [5] includes a method for manufacturing a wiring board as described in any one of [1] to [4], wherein the wiring pattern comprises copper wiring.

於該配線基板之製造方法中,由於配線圖案為銅配線,故而能夠製造具備良好之導電性及圖案化性之配線基板。In the manufacturing method of the wiring substrate, since the wiring pattern is copper wiring, a wiring substrate with good conductivity and patterning properties can be manufactured.

本發明[6]包含一種配線基板,其具備:第1絕緣層;複數個配線部,其等於上述第1絕緣層之厚度方向一側,於特定方向上相互隔開間隔地配置;第2絕緣層,其被覆上述複數個配線部之各者以使其等於在特定方向上彼此相鄰之配線部間不連續;以及磁性層,其於上述第1絕緣層及上述第2絕緣層之厚度方向一側,以被覆上述第1絕緣層之厚度方向一面之方式配置。The present invention [6] includes a wiring substrate comprising: a first insulating layer; a plurality of wiring portions, which are arranged at intervals from each other in a specific direction on one side of the thickness direction of the first insulating layer; a second insulating layer, which covers each of the plurality of wiring portions so that the wiring portions adjacent to each other in the specific direction are discontinuous; and a magnetic layer, which is arranged on one side of the thickness direction of the first insulating layer and the second insulating layer in a manner to cover one surface of the thickness direction of the first insulating layer.

於該配線基板中,由於具備被覆複數個配線部之第2絕緣層,故而能夠抑制配線部與磁性層接觸,而能夠抑制配線部彼此之短路。又,第2絕緣層以於特定方向上於配線部間不連續之方式被覆複數個配線部,磁性層配置於第1絕緣層之厚度方向一面,因此磁性層於特定方向上之配線部間,遍及厚度方向全體地配置。因此,能夠使配線基板之電感變得良好。In this wiring substrate, since the second insulating layer covering a plurality of wiring portions is provided, it is possible to suppress the wiring portions from contacting with the magnetic layer, and to suppress short circuits between the wiring portions. In addition, the second insulating layer covers the plurality of wiring portions in a manner that is discontinuous between the wiring portions in a specific direction, and the magnetic layer is arranged on one surface of the first insulating layer in the thickness direction, so that the magnetic layer is arranged between the wiring portions in the specific direction and throughout the thickness direction. Therefore, the inductance of the wiring substrate can be improved.

本發明[7]包含如[6]之配線基板,其中上述複數個配線部配置於共通之上述第1絕緣層之厚度方向一側,且上述第2絕緣層被覆上述複數個配線部之厚度方向一面及側面。The present invention [7] includes a wiring substrate as described in [6], wherein the plurality of wiring portions are arranged on one side in the thickness direction of the common first insulating layer, and the second insulating layer covers one surface and side surfaces in the thickness direction of the plurality of wiring portions.

於該配線基板中,由於複數個配線部配置於共通之一個第1絕緣層,故而複數個配線部彼此於厚度方向之位置精度良好,且確實地支持於第1絕緣層。In the wiring substrate, since the plurality of wiring portions are arranged on a common first insulating layer, the plurality of wiring portions are positioned with good accuracy in the thickness direction and are reliably supported by the first insulating layer.

本發明[8]包含如[6]或[7]之配線基板,其中上述第1絕緣層具有沿厚度方向投影時與上述配線部重疊之貫通孔。The present invention [8] includes a wiring substrate as described in [6] or [7], wherein the first insulating layer has a through hole that overlaps with the wiring portion when projected along the thickness direction.

於該配線基板中,由於經由第1絕緣層之貫通孔對配線部供電,故而能夠以第2絕緣層被覆配線部之厚度方向一面及側面之整個面。因此,能夠更確實地抑制配線部接觸於磁性層。In this wiring substrate, since the wiring portion is supplied with electricity through the through hole of the first insulating layer, the second insulating layer can cover the entire surface of the wiring portion in the thickness direction and the side surface. Therefore, it is possible to more reliably suppress the wiring portion from contacting the magnetic layer.

本發明[9]包含如[6]至[8]中任一項之配線基板,其中上述第1絕緣層之厚度為0.5 μm以上、10 μm以下。The present invention [9] includes the wiring substrate as described in any one of [6] to [8], wherein the thickness of the first insulating layer is not less than 0.5 μm and not more than 10 μm.

於該配線基板中,由於第1絕緣層之厚度為特定之範圍,故而能夠一面保持電感之機械強度,一面謀求配線基板之薄膜化。 [發明之效果]In the wiring substrate, since the thickness of the first insulating layer is within a specific range, it is possible to maintain the mechanical strength of the inductor while achieving thinner wiring substrate. [Effect of the invention]

本發明之配線基板之製造方法能夠抑制短路,能夠製造電感良好之配線基板。The manufacturing method of the wiring substrate of the present invention can suppress short circuit and manufacture a wiring substrate with good inductance.

本發明之配線基板能夠抑制短路,且電感良好。The wiring substrate of the present invention can suppress short circuits and has good inductance.

於圖1中,紙面上下方向為前後方向(第1方向),且紙面下側為前側(第1方向一側),紙面上側為後側(第1方向另一側)。紙面左右方向為左右方向(與第1方向正交之第2方向),且紙面左側為左側(第2方向一側),紙面右側為右側(第2方向另一側)。紙面紙厚方向為上下方向(厚度方向,與第1方向及第2方向正交之第3方向),紙面近前側為上側(厚度方向一側,第3方向一側),紙面裏側為下側(厚度方向另一側,第3方向另一側)。具體而言,依據各圖之方向箭頭。In Figure 1, the up-down direction of the paper is the front-back direction (the first direction), and the lower side of the paper is the front side (one side of the first direction), and the upper side of the paper is the back side (the other side of the first direction). The left-right direction of the paper is the left-right direction (the second direction orthogonal to the first direction), and the left side of the paper is the left side (one side of the second direction), and the right side of the paper is the right side (the other side of the second direction). The thickness direction of the paper is the up-down direction (thickness direction, the third direction orthogonal to the first and second directions), the front side of the paper is the upper side (one side of the thickness direction, one side of the third direction), and the inside of the paper is the lower side (the other side of the thickness direction, the other side of the third direction). Specifically, according to the direction arrows in each figure.

<第1實施形態> 作為本發明之配線基板之製造方法之一例,參照圖1~圖7對電感器1之製造方法之第1實施形態進行說明。<First embodiment> As an example of a method for manufacturing a wiring board of the present invention, a first embodiment of a method for manufacturing an inductor 1 will be described with reference to FIGS. 1 to 7 .

電感器1之製造方法之第1實施形態係圖1~圖2B所示之電感器1之製造方法,依序具備金屬薄片準備步驟、基底絕緣層配置步驟、導體層配置步驟、配線形成步驟、電沈積步驟、第1磁性層配置步驟、導體層去除步驟及第2磁性層配置步驟。以下,對各步驟進行詳細敍述。The first embodiment of the method for manufacturing the inductor 1 is the method for manufacturing the inductor 1 shown in FIG. 1 to FIG. 2B, and sequentially comprises a metal sheet preparation step, a base insulating layer arrangement step, a conductor layer arrangement step, a wiring formation step, an electro-deposition step, a first magnetic layer arrangement step, a conductor layer removal step, and a second magnetic layer arrangement step. Each step is described in detail below.

(金屬薄片準備步驟) 於金屬薄片準備步驟中,如圖3A及圖5A所示,準備金屬薄片10。(Metal sheet preparation step) In the metal sheet preparation step, as shown in FIG. 3A and FIG. 5A, a metal sheet 10 is prepared.

金屬薄片10係藉由配線形成步驟而成為下述配線圖案3之構件。即,金屬薄片10為配線圖案3之原料。金屬薄片10具有沿前後方向及左右方向延伸之片形狀。The metal sheet 10 is a member of the wiring pattern 3 described below through the wiring forming step. That is, the metal sheet 10 is a raw material of the wiring pattern 3. The metal sheet 10 has a sheet shape extending in the front-rear direction and the left-right direction.

作為金屬薄片10之材料,例如可列舉銅、銀、金、鎳或包含其等之合金等。作為金屬薄片10之材料,可較佳地列舉銅。藉此,可製造具備良好之導電性及圖案化性之電感器1。As the material of the metal sheet 10, for example, copper, silver, gold, nickel or alloys thereof can be listed. As the material of the metal sheet 10, copper can be preferably listed. In this way, the inductor 1 with good conductivity and patternability can be manufactured.

金屬薄片10之厚度例如為25 μm以上,較佳為50 μm以上,又,例如為300 μm以下,較佳為150 μm以下。藉此,可製造流動大電流之電感器1。The thickness of the metal sheet 10 is, for example, 25 μm or more, preferably 50 μm or more, and, for example, 300 μm or less, preferably 150 μm or less. Thus, the inductor 1 that flows a large current can be manufactured.

再者,金屬薄片10亦可與以下將要敍述之基底絕緣層2一併如利用假想線表示般作為2層基材(下述導電片材積層體40等)而準備。Furthermore, the metal sheet 10 can also be prepared as a two-layer substrate (such as the conductive sheet laminate 40 described below) together with the base insulating layer 2 to be described below as shown by the phantom line.

(基底絕緣層配置步驟) 於基底絕緣層配置步驟中,如圖3B及圖5B所示,於金屬薄片10之下側配置作為第1絕緣層之一例之基底絕緣層2。即,於金屬薄片10之下表面(厚度方向另一面)形成具有複數個貫通孔6及作為複數個定位部之一例之複數個對準標記7之基底絕緣層2。(Base insulation layer configuration step) In the base insulation layer configuration step, as shown in FIG3B and FIG5B, a base insulation layer 2 as an example of a first insulation layer is configured on the lower side of the metal sheet 10. That is, a base insulation layer 2 having a plurality of through holes 6 and a plurality of alignment marks 7 as an example of a plurality of positioning portions is formed on the lower surface (the other side in the thickness direction) of the metal sheet 10.

具體而言,首先,準備感光性之絕緣性材料之清漆,將該清漆塗佈於金屬薄片10之下表面整個面並使其乾燥,而形成基底皮膜。對基底皮膜經由具有與貫通孔6及對準標記7對應之圖案之光罩進行曝光。 其後,對基底皮膜進行顯影,視需要進行加熱硬化。Specifically, first, a varnish of a photosensitive insulating material is prepared, and the varnish is applied to the entire lower surface of the metal sheet 10 and dried to form a base film. The base film is exposed through a photomask having a pattern corresponding to the through hole 6 and the alignment mark 7. Thereafter, the base film is developed and heated and hardened as necessary.

又,於以2層基材之形式準備之情形時,將具有與貫通孔6及對準標記7對應之圖案之蝕刻阻劑配置於基底絕緣層2之下表面,於對基底絕緣層2進行蝕刻之後,去除蝕刻阻劑。或者,使用雷射於基底絕緣層2形成貫通孔6及對準標記7。Furthermore, when the substrate is prepared in the form of a two-layer substrate, an etching resist having a pattern corresponding to the through hole 6 and the alignment mark 7 is arranged on the lower surface of the base insulating layer 2, and the etching resist is removed after etching the base insulating layer 2. Alternatively, the through hole 6 and the alignment mark 7 are formed in the base insulating layer 2 using a laser.

作為基底絕緣層2之絕緣性材料,例如可列舉聚醯亞胺、聚矽氧烷、環氧系樹脂、氟系樹脂等有機材料。可較佳地列舉聚醯亞胺。Examples of insulating materials for the base insulating layer 2 include organic materials such as polyimide, polysiloxane, epoxy resin, and fluorine resin. Polyimide is preferred.

如參照圖1般,貫通孔6於基底絕緣層2中形成於沿厚度方向投影時與配線部21(於下文敍述)重疊之位置。貫通孔6具有俯視大致圓形狀及剖面觀察大致矩形狀。貫通孔6之左右方向長度(寬度)及前後方向長度分別短於配線部21之左右方向長度(寬度)及前後方向長度。As shown in FIG. 1 , the through hole 6 is formed in the base insulating layer 2 at a position overlapping with the wiring portion 21 (described below) when projected in the thickness direction. The through hole 6 has a generally circular shape in a plan view and a generally rectangular shape in a cross-sectional view. The length (width) in the left-right direction and the length in the front-back direction of the through hole 6 are respectively shorter than the length (width) in the left-right direction and the length in the front-back direction of the wiring portion 21.

對準標記7係藉由沿厚度方向貫通基底絕緣層2之標記用孔11所形成之絕緣部。對準標記7於基底絕緣層2中形成於沿厚度方向投影時不與配線圖案3重疊之位置。對準標記7具有俯視大致圓形狀及剖面觀察大致矩形狀。The alignment mark 7 is an insulating portion formed by a mark hole 11 penetrating the base insulating layer 2 in the thickness direction. The alignment mark 7 is formed in the base insulating layer 2 at a position that does not overlap with the wiring pattern 3 when projected in the thickness direction. The alignment mark 7 has a generally circular shape in a plan view and a generally rectangular shape in a cross-sectional view.

藉此,具有貫通孔6及對準標記7之基底絕緣層2形成於金屬薄片10之下表面。Thereby, the base insulating layer 2 having the through hole 6 and the alignment mark 7 is formed on the lower surface of the metal sheet 10.

(導體層配置步驟) 於導體層形成步驟中,如圖3C及圖5C所示,於基底絕緣層2之下側,配置作為導體層之一例之金屬薄膜12。即,於基底絕緣層2之下表面整個面形成金屬薄膜12。(Conductor layer configuration step) In the conductor layer formation step, as shown in FIG3C and FIG5C, a metal thin film 12 as an example of a conductor layer is configured on the lower side of the base insulating layer 2. That is, the metal thin film 12 is formed on the entire lower surface of the base insulating layer 2.

於金屬薄膜12之配置中,於貫通孔6及對準標記7以金屬薄膜12之上表面(厚度方向一面)與金屬薄片10之下表面接觸之方式形成金屬薄膜12。具體而言,以被覆自貫通孔6露出之金屬薄片10等之表面(第1露出面13)、自標記用孔11露出之金屬薄片10等之表面(第2露出面14)、及基底絕緣層2之下表面之方式,形成金屬薄膜12。In the arrangement of the metal film 12, the metal film 12 is formed in such a manner that the upper surface (one surface in the thickness direction) of the metal film 12 contacts the lower surface of the metal sheet 10 at the through hole 6 and the alignment mark 7. Specifically, the metal film 12 is formed in such a manner that the surface (first exposed surface 13) of the metal sheet 10 etc. exposed from the through hole 6, the surface (second exposed surface 14) of the metal sheet 10 etc. exposed from the mark hole 11, and the lower surface of the base insulating layer 2 are covered.

作為配置金屬薄膜12之方法,可列舉例如濺鍍法、真空蒸鍍法、離子電鍍法等乾式方法、及例如無電解鍍覆(無電解鍍銅、無電解鍍鎳等)等濕式方法,可較佳地列舉乾式法,可更佳地列舉濺鍍法。藉此,能夠將密接性良好且均勻之薄膜(具體而言,濺鍍膜)確實地配置於第1露出面13及第2露出面14。又,可藉由下述去除步驟選擇性地將金屬薄膜12確實地去除。As a method for disposing the metal thin film 12, dry methods such as sputtering, vacuum evaporation, and ion plating, and wet methods such as electroless plating (electroless copper plating, electroless nickel plating, etc.) can be listed. Dry methods can be listed preferably, and sputtering can be listed more preferably. In this way, a thin film (specifically, a sputtering film) with good adhesion and uniformity can be reliably arranged on the first exposed surface 13 and the second exposed surface 14. In addition, the metal thin film 12 can be selectively and reliably removed by the following removal step.

作為金屬薄膜12之材料,可列舉能夠藉由下述去除步驟選擇性地將金屬薄膜12去除之金屬材料、例如為銅、鉻、鎳鉻合金等金屬。As the material of the metal film 12, there can be listed metal materials that can selectively remove the metal film 12 by the following removal step, such as copper, chromium, nickel-chromium alloy and the like.

金屬薄膜12之厚度例如為10 nm以上,較佳為30 nm以上,又,例如為200 nm以下,較佳為100 nm以下。The thickness of the metal thin film 12 is, for example, greater than 10 nm, preferably greater than 30 nm, and, for example, less than 200 nm, preferably less than 100 nm.

(配線形成步驟) 於配線形成步驟中,於基底絕緣層2之上側形成配線圖案3。即,對金屬薄片10實施減成法,而自金屬薄片10去除不需要之部分,而形成配線圖案3。(Wiring formation step) In the wiring formation step, a wiring pattern 3 is formed on the upper side of the base insulating layer 2. That is, the metal sheet 10 is subjected to a subtractive method, and unnecessary portions are removed from the metal sheet 10 to form the wiring pattern 3.

首先,如圖3D及圖5D所示,於金屬薄膜12之下表面配置支持膜15。First, as shown in FIG. 3D and FIG. 5D , a support film 15 is disposed on the lower surface of the metal film 12 .

作為支持膜15,例如可列舉具有於後續步驟中能夠自金屬薄膜12容易地剝離之微黏著性之隔膜(separator film)。藉由支持膜15之配置,能夠確實地支持金屬薄片10及基底絕緣層2,並且於下述電沈積步驟中防止覆蓋絕緣層4覆膜於金屬薄膜12之下表面。As the support film 15, for example, there can be cited a separator film having a slight adhesiveness that can be easily peeled off from the metal thin film 12 in the subsequent step. By configuring the support film 15, the metal thin film 10 and the base insulating layer 2 can be reliably supported, and the cover insulating layer 4 can be prevented from being coated on the lower surface of the metal thin film 12 in the following electrodeposition step.

繼而,如圖3E及圖5E所示,實施減成法。具體而言,將具有與配線圖案3(於下文敍述)對應之圖案之乾膜光阻16(參照假想線)配置於金屬薄片10之上,繼而,藉由蝕刻去除除配線圖案3以外之不需要之金屬薄片10,最後藉由蝕刻或剝離等去除乾膜光阻16。Next, as shown in FIG. 3E and FIG. 5E , the subtractive method is implemented. Specifically, a dry film photoresist 16 (see the imaginary lines) having a pattern corresponding to the wiring pattern 3 (described below) is arranged on the metal thin film 10, and then, the unnecessary metal thin film 10 other than the wiring pattern 3 is removed by etching, and finally, the dry film photoresist 16 is removed by etching or stripping.

於具有圖案之乾膜光阻16之配置方法中,於金屬薄片10之上表面整個面配置乾膜光阻16,經由具有與配線圖案3對應之圖案之光罩進行曝光及顯影,並視需要進行加熱硬化。In the method of disposing the dry film photoresist 16 having a pattern, the dry film photoresist 16 is disposed on the entire upper surface of the metal sheet 10, exposed and developed through a mask having a pattern corresponding to the wiring pattern 3, and heated and hardened as needed.

此時,藉由自下側利用檢測裝置識別對準標記7,而以具有圖案之乾膜光阻16殘存於沿厚度方向投影時與貫通孔6重疊之位置之方式,對乾膜光阻16進行曝光及顯影。At this time, the alignment mark 7 is recognized from the bottom by using a detection device, and the dry film photoresist 16 is exposed and developed in such a way that the dry film photoresist 16 having a pattern remains at a position overlapping with the through hole 6 when projected along the thickness direction.

作為蝕刻,例如可列舉化學蝕刻等濕式蝕刻。再者,於濕式蝕刻之情形時,金屬薄片10之上部與下部相比易被蝕刻,因此配線圖案3之側剖面觀察形狀具有朝向下側擴展之錐形狀。As etching, for example, wet etching such as chemical etching can be cited. In the case of wet etching, the upper portion of the metal thin film 10 is more easily etched than the lower portion, so the side cross-sectional shape of the wiring pattern 3 has a cone shape that expands toward the lower side.

藉此,獲得依序具備支持膜15、金屬薄膜12、基底絕緣層2及配線圖案3之第1被電沈積體17。Thus, a first electrodeposited body 17 having the support film 15, the metal thin film 12, the base insulating layer 2 and the wiring pattern 3 in sequence is obtained.

(電沈積步驟) 於電沈積步驟中,如圖3F及圖5F所示,藉由電沈積而以作為第2絕緣層之一例之覆蓋絕緣層4被覆配線圖案3。即,藉由電沈積塗裝,而於配線圖案3之上表面及側面形成由電沈積塗裝膜形成之覆蓋絕緣層4。(Electrodeposition step) In the electrodeposition step, as shown in FIG. 3F and FIG. 5F, the wiring pattern 3 is covered with a covering insulating layer 4 as an example of a second insulating layer by electrodeposition. That is, the covering insulating layer 4 formed of an electrodeposition coating film is formed on the upper surface and side surface of the wiring pattern 3 by electrodeposition coating.

具體而言,藉由將第1被電沈積體17浸漬於含電沈積塗料之液體,繼而,對第1被電沈積體17施加電流,而使電沈積塗料析出至配線圖案3之表面,繼而,使析出之電沈積塗料乾燥。藉此,由電沈積塗料形成之電沈積塗裝膜(即,覆蓋絕緣層4)被覆於配線圖案3之表面(上表面及側面)。Specifically, the first electrodeposited body 17 is immersed in a liquid containing an electrodeposited coating, and then a current is applied to the first electrodeposited body 17, so that the electrodeposited coating is deposited on the surface of the wiring pattern 3, and then the deposited electrodeposited coating is dried. In this way, the electrodeposited coating film (i.e., the covering insulating layer 4) formed by the electrodeposited coating is coated on the surface (upper surface and side surface) of the wiring pattern 3.

作為電沈積塗料(即,覆蓋絕緣層4之絕緣性材料),例如可列舉於水中具有離子性之樹脂,且為公知或市售者,例如可列舉丙烯酸系樹脂、環氧系樹脂、聚醯亞胺系樹脂、或其等之混合等。Examples of the electrodeposition coating (i.e., the insulating material covering the insulating layer 4) include resins that are ionic in water and are known or commercially available, such as acrylic resins, epoxy resins, polyimide resins, or mixtures thereof.

為了對第1被電沈積體17施加電流,將連接於外部電源之引線(未圖示)連接於金屬薄膜12。藉此,經由引線及金屬薄膜12而自第1露出面13對配線圖案3整體施加直流電流。In order to apply current to the first electrodeposited body 17, a lead (not shown) connected to an external power source is connected to the metal film 12. Thus, a direct current is applied to the entire wiring pattern 3 from the first exposed surface 13 via the lead and the metal film 12.

作為電沈積塗裝,亦可為採用第1被電沈積體17(具體而言,配線圖案3)作為陰極之陰離子型電沈積塗裝、及採用第1被電沈積體17作為陽極之陽離子型電沈積塗裝中之任一者。As the electrodeposition coating, either cationic electrodeposition coating using the first electrodeposited object 17 (specifically, the wiring pattern 3) as a cathode or cation electrodeposition coating using the first electrodeposited object 17 as an anode may be used.

電沈積塗料之乾燥溫度例如為90℃以上、150℃以下,又,乾燥時間例如為1分鐘以上、30分鐘以下。The drying temperature of the electrodeposition coating is, for example, 90° C. to 150° C., and the drying time is, for example, 1 minute to 30 minutes.

藉此,於配線圖案3之上表面及側面形成覆蓋絕緣層4(電沈積塗裝膜)。Thereby, a covering insulating layer 4 (electrodeposition coating film) is formed on the upper surface and side surfaces of the wiring pattern 3.

再者,視需要,於電沈積前,藉由脫脂及酸洗將配線圖案3之表面洗淨。又,視需要,於電沈積後,藉由燒接將電沈積塗料加熱硬化。作為燒接時之加熱溫度,例如為150℃以上、250℃以下,又,加熱時間例如為10分鐘以上、5小時以下。Furthermore, if necessary, before the electro-deposition, the surface of the wiring pattern 3 is cleaned by degreasing and pickling. Also, if necessary, after the electro-deposition, the electro-deposition coating is heated and hardened by firing. The heating temperature during firing is, for example, 150° C. or higher and 250° C. or lower, and the heating time is, for example, 10 minutes or higher and 5 hours or lower.

(第1磁性層配置步驟) 於第1磁性層配置步驟中,如圖4G及圖6G所示,於基底絕緣層2及覆蓋絕緣層4之上側配置作為磁性層之一例之第1磁性層5。即,以被覆覆蓋絕緣層4之上表面及側面、以及自覆蓋絕緣層4露出之基底絕緣層2之上表面之方式,於其等之上側積層第1磁性層5。(First magnetic layer configuration step) In the first magnetic layer configuration step, as shown in FIG. 4G and FIG. 6G, the first magnetic layer 5 as an example of a magnetic layer is configured on the upper side of the base insulating layer 2 and the cover insulating layer 4. That is, the first magnetic layer 5 is laminated on the upper side in a manner that covers the upper surface and side surface of the cover insulating layer 4 and the upper surface of the base insulating layer 2 exposed from the cover insulating layer 4.

第1磁性層5之材料例如可列舉日本專利特開2014-189015號公報等中所揭示之磁性組合物(較佳為軟磁性組合物)等。具體而言,第1磁性層5之材料具有磁性粒子(較佳為軟磁性粒子,例如Fe-Si-A1合金等)及樹脂(較佳為熱固性樹脂,例如環氧樹脂、酚樹脂等)。The material of the first magnetic layer 5 may be, for example, a magnetic composition (preferably a soft magnetic composition) disclosed in Japanese Patent Publication No. 2014-189015, etc. Specifically, the material of the first magnetic layer 5 includes magnetic particles (preferably soft magnetic particles, such as Fe-Si-Al alloy, etc.) and resin (preferably a thermosetting resin, such as epoxy resin, phenol resin, etc.).

為了配置第1磁性層5,例如將由磁性組合物形成之半硬化狀態之磁性薄片按壓至基底絕緣層2及覆蓋絕緣層4之上表面,其後或與按壓同時地對半硬化狀態之磁性薄片進行加熱硬化。詳細而言,參照日本專利特開2014-189015號公報。To arrange the first magnetic layer 5, for example, a semi-hardened magnetic sheet formed of a magnetic composition is pressed onto the upper surface of the base insulating layer 2 and the cover insulating layer 4, and then or simultaneously with the pressing, the semi-hardened magnetic sheet is heated and hardened. For details, refer to Japanese Patent Publication No. 2014-189015.

藉此,將第1磁性層5配置於基底絕緣層2及覆蓋絕緣層4之上表面。Thereby, the first magnetic layer 5 is disposed on the upper surfaces of the base insulating layer 2 and the cover insulating layer 4 .

(導體層去除步驟) 於導體層去除步驟中,去除金屬薄膜12(導體層)。(Conductor layer removal step) In the conductor layer removal step, the metal film 12 (conductor layer) is removed.

首先,如圖4H及圖6H所示,藉由剝離將支持膜15自金屬薄膜12去除。First, as shown in FIG. 4H and FIG. 6H , the support film 15 is removed from the metal thin film 12 by peeling.

繼而,如圖4I及圖6I所示,藉由蝕刻或剝離將金屬薄膜12自基底絕緣層2去除。較佳為藉由蝕刻去除金屬薄膜12。作為蝕刻,可列舉上述濕式蝕刻等。Next, as shown in FIG4I and FIG6I, the metal thin film 12 is removed from the base insulating layer 2 by etching or stripping. It is preferable to remove the metal thin film 12 by etching. As etching, the above-mentioned wet etching and the like can be cited.

於藉由蝕刻去除金屬薄膜12之情形時,視需要,如參照圖4H及圖6H之假想線般,於蝕刻之前,為了保護第1磁性層5而於第1磁性層5之上表面整個面配置保護片材(遮蔽薄片等)46,並於蝕刻之後,去除保護片材46。When the metal film 12 is removed by etching, as needed, as shown in the imaginary lines of Figures 4H and 6H, before etching, a protective sheet (shielding sheet, etc.) 46 is arranged on the entire upper surface of the first magnetic layer 5 to protect the first magnetic layer 5, and after etching, the protective sheet 46 is removed.

藉此,基底絕緣層2之下表面、第1露出面13及第2露出面14露出。Thereby, the lower surface of the base insulating layer 2, the first exposed surface 13, and the second exposed surface 14 are exposed.

(第2磁性層配置步驟) 於第2磁性層配置步驟中,如圖4J及圖6J所示,於基底絕緣層2之下側配置第2磁性層18。即,於基底絕緣層2之下表面經由接著劑層19積層第2磁性層18。(Second magnetic layer configuration step) In the second magnetic layer configuration step, as shown in FIG. 4J and FIG. 6J , the second magnetic layer 18 is configured on the lower side of the base insulating layer 2. That is, the second magnetic layer 18 is laminated on the lower surface of the base insulating layer 2 via the adhesive layer 19.

首先,將接著劑層19配置於第2磁性層18之上表面,而準備接著劑層19與第2磁性層18之積層體。First, the bonding agent layer 19 is disposed on the upper surface of the second magnetic layer 18 to prepare a laminate of the bonding agent layer 19 and the second magnetic layer 18.

第2磁性層18之材料與第1磁性層5之材料相同。第2磁性層18可藉由關於第1磁性層5所例示之方法而製作。The material of the second magnetic layer 18 is the same as that of the first magnetic layer 5. The second magnetic layer 18 can be manufactured by the method exemplified for the first magnetic layer 5.

作為接著劑層19之材料,可列舉公知或市售之接著劑組合物及黏著劑組合物,例如可列舉丙烯酸系組合物、環氧系組合物、橡膠系組合物、矽酮系組合物等。As the material of the adhesive layer 19, there may be listed known or commercially available adhesive compositions and adhesive compositions, for example, acrylic compositions, epoxy compositions, rubber compositions, silicone compositions, and the like.

作為接著劑層19之配置,可列舉將接著劑組合物塗佈於第2磁性層18之方法、及將黏著帶按壓至第2磁性層18之方法等。As the configuration of the adhesive layer 19, there can be cited a method of applying an adhesive composition to the second magnetic layer 18, a method of pressing an adhesive tape to the second magnetic layer 18, and the like.

繼而,將接著劑層19與第2磁性層18之積層體以接著劑層19與基底絕緣層2接觸之方式配置於基底絕緣層2之下表面。此時,接著劑層19以貫通孔6及標記用孔11之內部由接著劑層19填充之方式配置於基底絕緣層2之下表面。Next, the laminate of the adhesive layer 19 and the second magnetic layer 18 is disposed on the lower surface of the base insulating layer 2 in such a manner that the adhesive layer 19 contacts the base insulating layer 2. At this time, the adhesive layer 19 is disposed on the lower surface of the base insulating layer 2 in such a manner that the insides of the through holes 6 and the marking holes 11 are filled with the adhesive layer 19.

再者,於第2磁性層配置步驟中,就對接著劑層19之孔之填充性良好之觀點而言,亦可藉由塗佈等將接著劑層19配置於基底絕緣層2之下表面,繼而,將第2磁性層18配置於接著劑層19之下表面。另一方面,就生產性之觀點而言,如上所述,準備接著劑層19與第2磁性層18之積層體,並配置於基底絕緣層2之下表面。Furthermore, in the second magnetic layer arrangement step, from the viewpoint of good filling property of the holes of the adhesive layer 19, the adhesive layer 19 may be arranged on the lower surface of the base insulating layer 2 by coating, etc., and then the second magnetic layer 18 may be arranged on the lower surface of the adhesive layer 19. On the other hand, from the viewpoint of productivity, as described above, a laminate of the adhesive layer 19 and the second magnetic layer 18 is prepared and arranged on the lower surface of the base insulating layer 2.

藉此,可獲得電感器1。In this way, the inductor 1 can be obtained.

(電感器) 如圖1所示,電感器1具有沿前後方向及左右方向延伸之大致矩形片形狀。如圖2A~B所示,電感器1沿厚度方向依序具備第2磁性層18、接著劑層19、基底絕緣層2、配線圖案3、覆蓋絕緣層4及第1磁性層5。(Inductor) As shown in FIG1 , the inductor 1 has a generally rectangular sheet shape extending in the front-rear direction and the left-right direction. As shown in FIG2A-B , the inductor 1 has a second magnetic layer 18 , an adhesive layer 19 , a base insulating layer 2 , a wiring pattern 3 , a cover insulating layer 4 and a first magnetic layer 5 in order along the thickness direction.

第2磁性層18係對電感器1賦予較高之電感之層。第2磁性層18係電感器1中之最下層。第2磁性層18於俯視時具有與基底絕緣層2大致相同之形狀,且具有沿前後方向及左右方向延伸之片形狀。The second magnetic layer 18 is a layer that imparts a higher inductance to the inductor 1. The second magnetic layer 18 is the lowest layer in the inductor 1. The second magnetic layer 18 has substantially the same shape as the base insulating layer 2 in a plan view, and has a sheet shape extending in the front-rear direction and the left-right direction.

第2磁性層18之厚度例如為10 μm以上,較佳為50 μm以上,又,例如為500 μm以下,較佳為300 μm以下。The thickness of the second magnetic layer 18 is, for example, not less than 10 μm, preferably not less than 50 μm, and, for example, not more than 500 μm, preferably not more than 300 μm.

接著劑層19係將第2磁性層18與基底絕緣層2接著之層。接著劑層19配置於第2磁性層18之上表面。具體而言,接著劑層19以與第2磁性層18之上表面及基底絕緣層2之下表面接觸之方式配置於第2磁性層18與基底絕緣層2之間。The adhesive layer 19 is a layer that bonds the second magnetic layer 18 to the base insulating layer 2. The adhesive layer 19 is disposed on the upper surface of the second magnetic layer 18. Specifically, the adhesive layer 19 is disposed between the second magnetic layer 18 and the base insulating layer 2 in such a manner as to contact the upper surface of the second magnetic layer 18 and the lower surface of the base insulating layer 2.

接著劑層19填充於基底絕緣層2中之貫通孔6及標記用孔11之內部。即,接著劑層19之上表面接觸於配線圖案3之第1露出面13及第1磁性層5之第2露出面14。The adhesive layer 19 is filled in the through hole 6 and the marking hole 11 in the base insulating layer 2. That is, the upper surface of the adhesive layer 19 contacts the first exposed surface 13 of the wiring pattern 3 and the second exposed surface 14 of the first magnetic layer 5.

接著劑層19之厚度(最大厚度)例如為0.5 μm以上,較佳為1 μm以上,又,例如為10 μm以下,較佳為5 μm以下。The thickness (maximum thickness) of the adhesive layer 19 is, for example, not less than 0.5 μm, preferably not less than 1 μm, and, for example, not more than 10 μm, preferably not more than 5 μm.

基底絕緣層2係支持配線圖案3之層。基底絕緣層2配置於接著劑層19之上表面。於基底絕緣層2之上表面配置有配線圖案3、覆蓋絕緣層4及第1磁性層5。基底絕緣層2具有與電感器1相同之外形形狀即片形狀。基底絕緣層2具備貫通孔6及對準標記7。The base insulating layer 2 is a layer supporting the wiring pattern 3. The base insulating layer 2 is disposed on the upper surface of the adhesive layer 19. The wiring pattern 3, the cover insulating layer 4 and the first magnetic layer 5 are disposed on the upper surface of the base insulating layer 2. The base insulating layer 2 has the same outer shape as the inductor 1, that is, a sheet shape. The base insulating layer 2 has a through hole 6 and an alignment mark 7.

基底絕緣層2之厚度例如為0.1 μm以上,較佳為0.5 μm以上,更佳為1 μm以上,又,例如為15 μm以下,較佳為10 μm以下,更佳為5 μm以下。若基底絕緣層2之厚度為上述範圍,則能夠一面保持電感之機械強度,一面謀求電感器1之薄膜化。The thickness of the base insulating layer 2 is, for example, 0.1 μm or more, preferably 0.5 μm or more, more preferably 1 μm or more, and, for example, 15 μm or less, preferably 10 μm or less, more preferably 5 μm or less. If the thickness of the base insulating layer 2 is within the above range, the inductor 1 can be made thinner while maintaining the mechanical strength of the inductor.

配線圖案3配置於基底絕緣層2之上表面。配線圖案3具有俯視大致矩形狀之環形狀。The wiring pattern 3 is disposed on the upper surface of the base insulating layer 2. The wiring pattern 3 has a substantially rectangular ring shape in a plan view.

配線圖案3一體地具備:複數個(2個)配線部21,其等沿前後方向延伸;連接配線部22,其連接複數個配線部21之前端;及複數個(2個)端子部23,其等配置於2個配線部21之後端。The wiring pattern 3 integrally includes: a plurality of (2) wiring portions 21 extending in the front-rear direction; a connecting wiring portion 22 connecting the front ends of the plurality of wiring portions 21; and a plurality of (2) terminal portions 23 arranged at the rear ends of the two wiring portions 21.

複數個配線部21具備沿左右方向(特定方向之一例)相互隔開間隔地配置之第1配線部21a及第2配線部21b。複數個配線部21分別於俯視時具有沿前後方向延伸之大致矩形狀,且於側剖面觀察時呈現具有朝向下側擴展之錐形狀之大致梯形形狀。The plurality of wiring parts 21 include a first wiring part 21a and a second wiring part 21b spaced apart from each other in the left-right direction (one example of a specific direction). The plurality of wiring parts 21 have a generally rectangular shape extending in the front-rear direction in a plan view, and have a generally trapezoidal shape with a tapered shape expanding downward in a side section view.

配線圖案3、尤其是第1配線部21a及第2配線部21b配置於共通之1片基底絕緣層2之上表面。即,支持第1配線部21a之基底絕緣層2與支持第2配線部21b之基底絕緣層2相互連續。The wiring pattern 3, in particular, the first wiring portion 21a and the second wiring portion 21b are arranged on the upper surface of a common base insulating layer 2. That is, the base insulating layer 2 supporting the first wiring portion 21a and the base insulating layer 2 supporting the second wiring portion 21b are continuous with each other.

連接配線部22配置於第1配線部21a及第2配線部21b之前側,且將其等之前端相互連接。即,連接配線部22之左端部之後端緣與第1配線部21a之前端緣連續,連接配線部22之右端部之前端緣與第2配線部21b之前端緣連續。連接配線部22於俯視時具有沿左右方向延伸之大致矩形狀,且於側剖面觀察時呈現具有朝向下側擴展之錐形狀之大致梯形形狀。The connection wiring portion 22 is arranged on the front side of the first wiring portion 21a and the second wiring portion 21b, and connects the front ends thereof to each other. That is, the rear edge of the left end of the connection wiring portion 22 is continuous with the front edge of the first wiring portion 21a, and the front edge of the right end of the connection wiring portion 22 is continuous with the front edge of the second wiring portion 21b. The connection wiring portion 22 has a generally rectangular shape extending in the left-right direction when viewed from above, and has a generally trapezoidal shape with a tapered shape expanding toward the lower side when viewed from the side section.

複數個(2個)端子部23係於第1配線部21a之後端及第2配線部21b之後端以與其等連續之方式配置。複數個端子部23之左右方向長度(寬度)短於配線部21之左右方向長度(寬度)。端子部23於俯視時具有大致矩形狀,且於側剖面觀察時呈現具有朝向下側擴展之錐形狀之大致梯形形狀。The plurality of (2) terminal portions 23 are arranged at the rear end of the first wiring portion 21a and the rear end of the second wiring portion 21b in a continuous manner. The length (width) of the plurality of terminal portions 23 in the left-right direction is shorter than the length (width) of the wiring portion 21 in the left-right direction. The terminal portion 23 has a generally rectangular shape when viewed from above, and has a generally trapezoidal shape with a tapered shape expanding toward the lower side when viewed from the side section.

配線部21之寬度(左右方向長度)及連接配線部22之寬度(前後方向長度)分別例如為25 μm以上,較佳為100 μm以上,又,例如為2000 μm以下,較佳為750 μm以下。The width (length in the horizontal direction) of the wiring portion 21 and the width (length in the front-rear direction) of the connection wiring portion 22 are each, for example, not less than 25 μm, preferably not less than 100 μm, and, for example, not more than 2000 μm, preferably not more than 750 μm.

配線圖案3之厚度與上述金屬薄片10之厚度相同。The thickness of the wiring pattern 3 is the same as the thickness of the metal sheet 10 mentioned above.

配線圖案3之材料與金屬薄片10之材料相同,可較佳地列舉銅。若配線圖案3為由銅形成之銅配線,則由於銅具備良好之導電性及圖案化性,故而可容易地製造具備良好之導電性及微細之圖案化之電感器1。The material of the wiring pattern 3 is the same as that of the metal sheet 10, preferably copper. If the wiring pattern 3 is a copper wiring formed of copper, since copper has good conductivity and patterning properties, the inductor 1 having good conductivity and fine patterning can be easily manufactured.

覆蓋絕緣層4係保護配線圖案3之絕緣層。覆蓋絕緣層4係以被覆配線圖案3之上表面整個面及側面整個面之方式,配置於基底絕緣層2之上。The cover insulating layer 4 is an insulating layer for protecting the wiring pattern 3. The cover insulating layer 4 is disposed on the base insulating layer 2 in such a manner as to cover the entire upper surface and the entire side surface of the wiring pattern 3.

覆蓋絕緣層4一體地具備:第1覆蓋絕緣部4a,其被覆第1配線部21a;第2覆蓋絕緣部4b,其被覆第2配線部21b;第3覆蓋絕緣部4c,其被覆連接配線部22;及複數個(2個)第4覆蓋絕緣部4d,其等被覆複數個(2個)端子部23。The covering insulating layer 4 integrally comprises: a first covering insulating portion 4a covering the first wiring portion 21a; a second covering insulating portion 4b covering the second wiring portion 21b; a third covering insulating portion 4c covering the connecting wiring portion 22; and a plurality of (2) fourth covering insulating portions 4d covering a plurality of (2) terminal portions 23.

於覆蓋絕緣層4中,左側之第4覆蓋絕緣部4d、第1覆蓋絕緣部4a、第3覆蓋絕緣部4c、第2覆蓋絕緣部4b及右側之第4覆蓋絕緣部4d依序沿左右方向或前後方向連續。In the cover insulating layer 4, the fourth cover insulating portion 4d on the left side, the first cover insulating portion 4a, the third cover insulating portion 4c, the second cover insulating portion 4b and the fourth cover insulating portion 4d on the right side are sequentially continuous in the left-right direction or the front-rear direction.

又,如圖2A之剖面觀察所示,於覆蓋絕緣層4中,第1覆蓋絕緣部4a及第2覆蓋絕緣部4b不直接地相互連續。即,為了使於左右方向上彼此相鄰之複數個配線部21(第1配線部21a及第2配線部21b)之間24連續,不形成覆蓋絕緣層4。更具體而言,於複數個配線部間24,實質上不存在覆蓋絕緣層4(其中,被覆配線部21之側面之覆蓋絕緣層4(4a、4b)除外)。Furthermore, as shown in the cross-sectional view of FIG. 2A , the first covering insulating portion 4a and the second covering insulating portion 4b are not directly connected to each other in the covering insulating layer 4. That is, in order to make the space 24 between the plurality of wiring portions 21 (the first wiring portion 21a and the second wiring portion 21b) adjacent to each other in the left-right direction continuous, the covering insulating layer 4 is not formed. More specifically, the covering insulating layer 4 does not substantially exist between the plurality of wiring portions 24 (except for the covering insulating layer 4 (4a, 4b) covering the side surfaces of the wiring portion 21).

覆蓋絕緣層4之厚度例如為0.5 μm以上,較佳為1 μm以上,又,例如為10 μm以下,較佳為7 μm以下。藉此,能夠一面使配線圖案3與第1磁性層5接觸,一面使配線圖案3與第1磁性層5之距離接近。因此,能夠使電感器1之電感進一步提高。The thickness of the cover insulating layer 4 is, for example, 0.5 μm or more, preferably 1 μm or more, and, for example, 10 μm or less, preferably 7 μm or less. This allows the wiring pattern 3 to contact the first magnetic layer 5 while shortening the distance between the wiring pattern 3 and the first magnetic layer 5. Therefore, the inductance of the inductor 1 can be further increased.

第1磁性層5係對電感器1賦予較高之電感之層。第1磁性層5於俯視時具有與基底絕緣層2大致相同之形狀,且具有沿前後方向及左右方向延伸之片形狀。The first magnetic layer 5 is a layer that imparts a higher inductance to the inductor 1. The first magnetic layer 5 has substantially the same shape as the base insulating layer 2 in a plan view, and has a sheet shape extending in the front-rear direction and the left-right direction.

第1磁性層5係電感器1中之最上層。第1磁性層5配置於基底絕緣層2及覆蓋絕緣層4之上。具體而言,第1磁性層5以被覆覆蓋絕緣層4之上表面及側面之方式配置於基底絕緣層2之上表面。The first magnetic layer 5 is the uppermost layer in the inductor 1. The first magnetic layer 5 is disposed on the base insulating layer 2 and the cover insulating layer 4. Specifically, the first magnetic layer 5 is disposed on the upper surface of the base insulating layer 2 so as to cover the upper surface and the side surface of the cover insulating layer 4.

第1磁性層5係於配線部間24遍及配線部21之上下方向全體地存在。即,於配線部間24,第1磁性層5自基底絕緣層2之上表面存在至較配線部21更高之位置為止。又,第1磁性層5實質上填充配線部間24之全部。具體而言,於將由配線部21(第1配線部21a、第2配線部21b)及被覆其之覆蓋絕緣層4(第1覆蓋絕緣部4a、第2覆蓋絕緣部4b)構成之構件設為覆蓋配線部時,於彼此相鄰之覆蓋配線部之間,於側剖面觀察時僅存在第1磁性層5。The first magnetic layer 5 is present in the entirety of the wiring section 24 in the up-down direction of the wiring section 21. That is, in the wiring section 24, the first magnetic layer 5 is present from the upper surface of the base insulating layer 2 to a position higher than the wiring section 21. Moreover, the first magnetic layer 5 substantially fills the entirety of the wiring section 24. Specifically, when a component composed of the wiring section 21 (the first wiring section 21a, the second wiring section 21b) and the covering insulating layer 4 (the first covering insulating section 4a, the second covering insulating section 4b) covering the wiring section is set as a covering wiring section, only the first magnetic layer 5 is present between the adjacent covering wiring sections when observed in a side section.

第1磁性層5之厚度例如為10 μm以上,較佳為50 μm以上,又,例如為500 μm以下,較佳為300 μm以下。The thickness of the first magnetic layer 5 is, for example, not less than 10 μm, preferably not less than 50 μm, and, for example, not more than 500 μm, preferably not more than 300 μm.

電感器1並非下述電子機器,而是電子機器之一零件、即用以製作電子機器之零件,且為不包含電子元件(晶片、電容器等)、或安裝電子元件之安裝基板,而是零件單獨地流通且產業上可利用之器件。The inductor 1 is not the electronic device described below, but a part of the electronic device, that is, a part used to manufacture the electronic device, and does not include electronic components (chips, capacitors, etc.) or a mounting substrate for mounting electronic components, but is a device that is distributed separately as a component and can be used in the industry.

該電感器1例如搭載(組裝)於電子機器等。雖未圖示,但電子機器具備安裝基板、及安裝於安裝基板之電子元件(晶片、電容器等)。而且,於電子機器中,電感器1被安裝於安裝基板。The inductor 1 is mounted (assembled) on, for example, an electronic device. Although not shown, the electronic device includes a mounting substrate and electronic components (chips, capacitors, etc.) mounted on the mounting substrate. In the electronic device, the inductor 1 is mounted on the mounting substrate.

具體而言,如圖7所示,以端子部23露出之方式,形成沿厚度方向貫通第1磁性層5及覆蓋絕緣層4之複數個通孔25(貫通孔),並對通孔25之內周面實施絕緣處理。繼而,將導電性之連接構件26以連接構件26之一端與端子部23之上表面接觸之方式配置於通孔25內部。電感器1係經由連接構件26而安裝於安裝基板,與其他電子機器電性連接,且作為被動元件而發揮作用。Specifically, as shown in FIG. 7 , a plurality of through holes 25 (through holes) are formed to penetrate the first magnetic layer 5 and the covering insulating layer 4 in the thickness direction in such a manner that the terminal portion 23 is exposed, and the inner peripheral surface of the through hole 25 is subjected to insulation treatment. Then, a conductive connecting member 26 is arranged inside the through hole 25 in such a manner that one end of the connecting member 26 contacts the upper surface of the terminal portion 23. The inductor 1 is mounted on the mounting substrate via the connecting member 26, is electrically connected to other electronic devices, and functions as a passive element.

而且,於該電感器1之製造方法中,具備:配線形成步驟,其係於基底絕緣層2之上側形成配線圖案3;電沈積步驟,其係藉由電沈積而以覆蓋絕緣層4被覆配線圖案3;以及第1磁性層配置步驟,其係於基底絕緣層2及覆蓋絕緣層4之上側配置第1磁性層5。Furthermore, the manufacturing method of the inductor 1 comprises: a wiring forming step of forming a wiring pattern 3 on the upper side of the base insulating layer 2; an electroplating step of covering the wiring pattern 3 with the covering insulating layer 4 by electroplating; and a first magnetic layer arranging step of arranging the first magnetic layer 5 on the upper side of the base insulating layer 2 and the covering insulating layer 4.

因此,能夠抑制配線圖案3直接接觸於第1磁性層5。因此,能夠抑制配線圖案3之短路。Therefore, it is possible to suppress the wiring pattern 3 from directly contacting the first magnetic layer 5. Therefore, it is possible to suppress the wiring pattern 3 from short-circuiting.

又,於該電感器1之製造方法中,將覆蓋絕緣層4以使構成配線圖案3之複數個配線部21(第1配線部21a、第2配線部21b)之各者於彼此相鄰之配線部間24不連續之方式被覆於配線圖案3。因此,能夠於配線圖案3之間24(即,相鄰之配線部21之間),遍及厚度方向全體地配置第1磁性層5。因此,能夠使電感器1之電感提高。Furthermore, in the manufacturing method of the inductor 1, the covering insulating layer 4 is covered on the wiring pattern 3 so that each of the plurality of wiring portions 21 (the first wiring portion 21a and the second wiring portion 21b) constituting the wiring pattern 3 is not continuous between adjacent wiring portions 24. Therefore, the first magnetic layer 5 can be arranged over the entire thickness direction between the wiring patterns 3 24 (i.e., between adjacent wiring portions 21). Therefore, the inductance of the inductor 1 can be improved.

又,於該電感器1之製造方法中,能夠將覆蓋絕緣層4較薄地且均勻地並且確實地被覆於配線圖案3之表面。因此,能夠使第1磁性層5與配線圖案3之距離接近。因此,能夠使電感器1之電感提高。Furthermore, in the manufacturing method of the inductor 1, the cover insulating layer 4 can be thinly, uniformly, and reliably coated on the surface of the wiring pattern 3. Therefore, the distance between the first magnetic layer 5 and the wiring pattern 3 can be shortened. Therefore, the inductance of the inductor 1 can be improved.

又,於該電感器1之製造方法中,於配線形成步驟中,藉由減成法形成配線圖案3。Furthermore, in the manufacturing method of the inductor 1, in the wiring forming step, the wiring pattern 3 is formed by a subtractive method.

因此,與加成法相比,能夠於短時間內形成配線圖案3,進而能夠於短時間內製造電感器1。又,能夠容易地製造配線厚度較厚之電感器1,而能夠流動大電流。Therefore, compared with the additive method, the wiring pattern 3 can be formed in a shorter time, and the inductor 1 can be manufactured in a shorter time. In addition, the inductor 1 with thicker wiring can be easily manufactured, and a large current can flow.

又,於該電感器1之製造方法中,電沈積步驟係經由沿厚度方向投影時與配線圖案3重疊之基底絕緣層2之貫通孔6,對配線圖案3供電(參照圖3F)。Furthermore, in the manufacturing method of the inductor 1, the electric deposition step supplies power to the wiring pattern 3 through the through hole 6 of the base insulating layer 2 which overlaps with the wiring pattern 3 when projected in the thickness direction (see FIG. 3F).

因此,能夠以覆蓋絕緣層4被覆配線圖案3之上表面及側面之整個面。即,配線圖案3之上表面及側面完全由覆蓋絕緣層4被覆。Therefore, the entire upper surface and side surface of the wiring pattern 3 can be covered with the cover insulating layer 4. That is, the upper surface and side surface of the wiring pattern 3 are completely covered by the cover insulating layer 4.

尤其是,於下述第2實施形態之電感器1之製造方法中,電感器1具有儘管為少許但仍會使磁性層與配線圖案3接觸之露出側面48(於下文敍述),而難以完全將其等絕緣。另一方面,於該第1實施形態之電感器1中,能夠完全地抑制磁性層與配線圖案3之接觸。其結果,能夠更確實地抑制配線圖案3接觸於第1磁性層5。In particular, in the manufacturing method of the inductor 1 of the second embodiment described below, the inductor 1 has an exposed side surface 48 (described below) that allows the magnetic layer and the wiring pattern 3 to contact each other, although slightly, and it is difficult to completely insulate them. On the other hand, in the inductor 1 of the first embodiment, the contact between the magnetic layer and the wiring pattern 3 can be completely suppressed. As a result, it is possible to more reliably suppress the wiring pattern 3 from contacting the first magnetic layer 5.

又,於該電感器1之製造方法中,基底絕緣層2具備對準標記7。Furthermore, in the manufacturing method of the inductor 1, the base insulating layer 2 has an alignment mark 7.

因此,能夠以對準標記7作為記號而於貫通孔6之上側準確地形成配線圖案3。因此,能夠藉由自貫通孔6之供電,而更確實地將覆蓋絕緣層4被覆於配線圖案3。Therefore, the wiring pattern 3 can be accurately formed on the upper side of the through hole 6 using the alignment mark 7 as a mark. Therefore, the cover insulating layer 4 can be more reliably covered on the wiring pattern 3 by supplying power from the through hole 6.

又,藉由該製造方法所獲得之電感器1具備:基底絕緣層2;複數個配線部21,其等於基底絕緣層2之上側,於左右方向上相互隔開間隔地配置;覆蓋絕緣層4,其被覆複數個配線部21之各者以使其等於在左右方向上彼此相鄰之配線部間24不連續;以及第1磁性層5,其於基底絕緣層2及覆蓋絕緣層4之上側,以被覆基底絕緣層2之上表面之方式配置。Furthermore, the inductor 1 obtained by the manufacturing method comprises: a base insulating layer 2; a plurality of wiring portions 21, which are arranged on the upper side of the base insulating layer 2 and spaced apart from each other in the left-right direction; a covering insulating layer 4, which covers each of the plurality of wiring portions 21 so that the wiring portions 24 adjacent to each other in the left-right direction are discontinuous; and a first magnetic layer 5, which is arranged on the upper side of the base insulating layer 2 and the covering insulating layer 4 in a manner covering the upper surface of the base insulating layer 2.

因此,能夠抑制配線部21與第1磁性層5接觸,能夠抑制配線部21彼此之短路。又,由於第1磁性層5於配線部間24遍及厚度方向全體地配置,故而能夠使電感器1之電感變得良好。Therefore, it is possible to suppress the wiring portion 21 from contacting the first magnetic layer 5, and suppress short circuits between the wiring portions 21. In addition, since the first magnetic layer 5 is disposed between the wiring portions 24 over the entire thickness direction, the inductor 1 can have improved inductance.

又,於該電感器1中,複數個配線部21配置於共通之基底絕緣層2之上側,覆蓋絕緣層4被覆複數個配線部21之上表面及側面。Furthermore, in the inductor 1 , the plurality of wiring portions 21 are disposed on the upper side of the common base insulating layer 2 , and the cover insulating layer 4 covers the upper surface and the side surfaces of the plurality of wiring portions 21 .

因此,複數個配線部21彼此之厚度方向之位置精度良好,且確實地支持於基底絕緣層2。Therefore, the plurality of wiring portions 21 have good positional accuracy in the thickness direction and are reliably supported by the base insulating layer 2 .

(變化例) 於以下之各變化例中,對與上述一實施形態相同之構件及步驟標註相同之參考符號,並省略其詳細之說明。又,可適當組合各變化例。進而,各變化例除特別記載以外,可發揮與一實施形態相同之作用效果。(Variations) In each of the following variations, the same reference symbols are used for the same components and steps as those in the above-mentioned embodiment, and detailed descriptions thereof are omitted. In addition, the variations may be appropriately combined. Furthermore, each variation may exert the same effects as those in the embodiment, except for those specifically described.

第1變化例 如圖8A所示,於基底絕緣層配置步驟之前,亦可實施於金屬薄片10之下表面配置第1防擴散層30之步驟。即,亦可於金屬薄片10之下表面及基底絕緣層2之上表面配置第1防擴散層30。First variation example As shown in FIG8A, before the step of configuring the base insulating layer, a step of configuring the first anti-diffusion layer 30 on the lower surface of the metal sheet 10 may be performed. That is, the first anti-diffusion layer 30 may be configured on the lower surface of the metal sheet 10 and the upper surface of the base insulating layer 2.

作為第1防擴散層30之材料,例如可列舉鎳、鎳鉻合金、鈷、鉭等導體。就能夠於形成時實施鍍覆及於去除時實施軟蝕刻,且加工性良好之觀點而言,可較佳地列舉鎳。As the material of the first anti-diffusion layer 30, for example, there can be cited conductors such as nickel, nickel-chromium alloy, cobalt, and tantalum. Nickel is preferably cited from the viewpoint that it can be plated when formed and soft etched when removed, and has good processability.

若如圖8A所示般配置第1防擴散層30而製造電感器1,則如圖8B所示,電感器1中之配線圖案3具備由第1防擴散層30形成之配線下部31、及配置於其上表面且由金屬薄片10形成之配線主部32。When the inductor 1 is manufactured by disposing the first anti-diffusion layer 30 as shown in FIG8A, the wiring pattern 3 in the inductor 1 has a wiring lower portion 31 formed by the first anti-diffusion layer 30 and a wiring main portion 32 disposed on the upper surface thereof and formed by the metal sheet 10 as shown in FIG8B.

再者,於該圖8A所示之製造方法中,於配線形成步驟中,根據各蝕刻速度之不同,不僅實施對金屬薄片10進行蝕刻之步驟,而且實施對第1防擴散層30進行蝕刻之步驟。Furthermore, in the manufacturing method shown in FIG. 8A , in the wiring forming step, not only the step of etching the metal thin film 10 but also the step of etching the first anti-diffusion layer 30 is performed according to the difference in etching speeds.

於該圖8A所示之製造方法中,能夠抑制金屬薄片10之金屬成分(例如,銅離子)侵蝕基底絕緣層2並擴散至基底絕緣層2內部,因此能夠使金屬薄片10與基底絕緣層2之剝離強度提高。In the manufacturing method shown in FIG. 8A , the metal components (e.g., copper ions) of the metal sheet 10 can be suppressed from corroding the base insulating layer 2 and diffusing into the base insulating layer 2 , thereby improving the peeling strength between the metal sheet 10 and the base insulating layer 2 .

第2變化例 如圖9A所示,於配線形成步驟中,亦可於減成法之實施後,實施於由金屬薄片10形成之配線圖案3配置第2防擴散層33之步驟。Second variation example As shown in FIG. 9A , in the wiring formation step, after the subtractive method is implemented, a step of configuring a second anti-diffusion layer 33 on the wiring pattern 3 formed by the metal sheet 10 may be implemented.

作為第2防擴散層33之材料,例如可列舉鎳等導體。As a material of the second anti-diffusion layer 33, for example, a conductor such as nickel can be cited.

為了配置第2防擴散層33,例如可列舉使用鎳浴之鍍覆處理等。In order to arrange the second anti-diffusion layer 33, for example, a plating treatment using a nickel bath can be cited.

若如圖9A所示般配置第2防擴散層33而製造電感器1,則如圖9B所示,電感器1中之配線圖案3具備由金屬薄片10形成之配線主部32、及被覆其上表面及側面之第2防擴散層33。When the inductor 1 is manufactured by disposing the second anti-diffusion layer 33 as shown in FIG. 9A , the wiring pattern 3 in the inductor 1 includes a wiring main portion 32 formed of a metal sheet 10 and a second anti-diffusion layer 33 covering the upper surface and side surfaces thereof as shown in FIG. 9B .

於該圖9B所示之製造方法中,能夠抑制因來自配線主部32之金屬成分(例如,銅離子)侵蝕至覆蓋絕緣層4及第1磁性層5所產生之短路。In the manufacturing method shown in FIG. 9B , it is possible to suppress a short circuit caused by corrosion of the metal component (eg, copper ions) from the wiring main portion 32 to the covering insulating layer 4 and the first magnetic layer 5 .

又,亦可組合第1變化例及第2變化例。Furthermore, the first variation and the second variation may be combined.

第3變化例 配線圖案3之形狀並不限定於上述。配線圖案3例如亦可如圖10A及圖10B所示般具有朝向前後方向及左右方向前進之彎曲形狀(蜿蜒形狀)。The shape of the wiring pattern 3 is not limited to the above. The wiring pattern 3 may also have a curved shape (meandering shape) that advances in the front-rear direction and the left-right direction as shown in FIG. 10A and FIG. 10B.

例如,於圖10A所示之配線圖案3中,具備:複數個(5個)配線部21,其等沿左右方向延伸;複數個(4個)連接配線部22,其等將複數個配線部21之左端部彼此或右端部彼此連結;及複數個端子部23,其等配置於配線圖案3之兩端部。For example, in the wiring pattern 3 shown in Figure 10A, there are: a plurality of (5) wiring parts 21, which extend in the left-right direction; a plurality of (4) connecting wiring parts 22, which connect the left ends or the right ends of the plurality of wiring parts 21 to each other; and a plurality of terminal parts 23, which are arranged at both ends of the wiring pattern 3.

例如,於圖10B所示之配線圖案3中,具備:複數個(3個)配線部21,其等沿前後方向延伸;複數個(2個)連接配線部22,其等將複數個配線部21之前端部彼此或後端部彼此連結;及複數個端子部23,其等配置於配線圖案3之兩端部。For example, in the wiring pattern 3 shown in Figure 10B, there are: a plurality of (3) wiring sections 21, which extend in the front-to-back direction; a plurality of (2) connecting wiring sections 22, which connect the front ends or the rear ends of the plurality of wiring sections 21 to each other; and a plurality of terminal sections 23, which are arranged at both ends of the wiring pattern 3.

又,配線圖案3例如亦可如圖10C所示般具有俯視大致圓形狀之環形狀。於圖10C所示之配線圖案3中,關於沿特定方向相鄰之配線部21,特定方向及配線部21之長度可採用任意方向(例如,左右方向、交叉方向)及任意長度。例如,於圖10C中,於採用交叉方向(與前後方向及左右方向之兩者交叉之方向:傾斜方向)作為特定方向之情形時,利用影線表示於交叉方向上彼此相鄰之複數個(2個)配線部21。Furthermore, the wiring pattern 3 may also have a substantially circular ring shape in a top view as shown in FIG. 10C . In the wiring pattern 3 shown in FIG. 10C , regarding the wiring portions 21 adjacent to each other in a specific direction, the specific direction and the length of the wiring portion 21 may adopt any direction (e.g., left-right direction, cross direction) and any length. For example, in FIG. 10C , when the cross direction (the direction intersecting both the front-back direction and the left-right direction: the oblique direction) is adopted as the specific direction, a plurality of (two) wiring portions 21 adjacent to each other in the cross direction are indicated by hatching.

又,雖未圖示,但配線圖案3亦可不具備端子部23,而是包含配線部21及連接配線部22。Although not shown, the wiring pattern 3 may include the wiring portion 21 and the connection wiring portion 22 instead of the terminal portion 23 .

第4實施例 雖未圖示,但電感器1亦可不具備第2磁性層18及接著劑層19。就具備更高之電感之觀點而言,較佳為電感器1具備第2磁性層18及接著劑層19。Fourth Embodiment Although not shown, the inductor 1 may not have the second magnetic layer 18 and the adhesive layer 19. From the perspective of having a higher inductance, it is preferred that the inductor 1 has the second magnetic layer 18 and the adhesive layer 19.

第5實施例 雖未圖示,但電感器1亦可藉由後續之外形加工等而於基底絕緣層2中不具備對準標記7。Fifth embodiment Although not shown, the inductor 1 may also be provided without the alignment mark 7 in the base insulating layer 2 by subsequent external processing or the like.

<第2實施形態> 作為本發明之配線基板之製造方法之一例,參照圖11A~圖14F對電感器1之製造方法之第2實施形態進行說明。再者,於第2實施形態中,對與上述第1實施形態相同之構件及步驟標註相同之參考符號,並省略其詳細之說明。<Second embodiment> As an example of a method for manufacturing a wiring board of the present invention, a second embodiment of a method for manufacturing an inductor 1 is described with reference to FIGS. 11A to 14F. In the second embodiment, the same components and steps as those in the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

電感器1之製造方法之第2實施形態具備金屬薄片積層體準備步驟、配線形成步驟、引線遮蔽步驟、電沈積步驟、遮蔽去除步驟、引線去除步驟、第1磁性層配置步驟及第2磁性層配置步驟。以下,對各步驟進行詳細敍述。The second embodiment of the method for manufacturing the inductor 1 includes a metal sheet laminate preparation step, a wiring formation step, a lead shielding step, an electroplating step, a shielding removal step, a lead removal step, a first magnetic layer arrangement step, and a second magnetic layer arrangement step. Each step is described in detail below.

(金屬薄片積層體準備步驟) 於金屬薄片積層體準備步驟中,如圖11A所示,準備具備金屬薄片10及配置於其下表面整個面之基底絕緣層2之金屬薄片積層體40。(Metal sheet laminate preparation step) In the metal sheet laminate preparation step, as shown in FIG. 11A , a metal sheet laminate 40 having a metal sheet 10 and a base insulating layer 2 disposed on the entire lower surface thereof is prepared.

金屬薄片10與第1實施形態相同。The metal sheet 10 is the same as that in the first embodiment.

關於基底絕緣層2之材料,除了與第1實施形態相同之有機材料以外,可列舉例如玻璃、陶瓷等無機材料,可列舉例如無機材料與有機材料之複合材料(玻璃環氧樹脂)等絕緣材料。Regarding the material of the base insulating layer 2, in addition to the same organic material as in the first embodiment, there can be exemplified inorganic materials such as glass and ceramics, and insulating materials such as composite materials of inorganic and organic materials (glass epoxy resin).

金屬薄片積層體40可較佳地列舉銅箔積層板等。The metal sheet laminate 40 can preferably be a copper foil laminate or the like.

(配線形成步驟) 於配線形成步驟中,於基底絕緣層2之上側形成具有配線圖案3及電沈積引線41之導體圖案42。即,對金屬薄片10實施減成法,自金屬薄片10去除不需要之部分,而形成導體圖案42。(Wiring formation step) In the wiring formation step, a conductor pattern 42 having a wiring pattern 3 and an electro-deposited lead 41 is formed on the upper side of the base insulating layer 2. That is, a subtractive method is applied to the metal sheet 10 to remove unnecessary portions from the metal sheet 10, thereby forming the conductor pattern 42.

首先,如圖11B所示,於基底絕緣層2之下表面配置支持膜15。First, as shown in FIG. 11B , a support film 15 is disposed on the lower surface of the base insulating layer 2 .

繼而,如圖11C及圖13A所示,實施減成法。減成法與第1實施形態相同。Next, as shown in Fig. 11C and Fig. 13A, the reduction method is implemented. The reduction method is the same as that of the first embodiment.

導體圖案42具備配線圖案3及電沈積引線41。The conductor pattern 42 includes the wiring pattern 3 and the electrodeposited leads 41.

電沈積引線41具備:第1引線部43,其自配線圖案3之一(左側之)端子部23之後端緣朝向後側延伸;及第2引線部44,其與第1引線部43之後端緣連續,且沿左右方向延伸。The electro-deposited lead 41 includes a first lead portion 43 extending rearward from a rear edge of one (left) terminal portion 23 of the wiring pattern 3, and a second lead portion 44 continuing from the rear edge of the first lead portion 43 and extending in the left-right direction.

藉此,獲得依序具備支持膜15、基底絕緣層2及導體圖案42之第2被電沈積體45。Thereby, a second electrodeposited body 45 having the support film 15, the base insulating layer 2 and the conductive pattern 42 in sequence is obtained.

(引線遮蔽步驟) 於遮蔽步驟中,如圖11D及圖13B所示,遮蔽電沈積引線41。即,以遮蔽薄片46被覆電沈積引線41之上表面及側面。(Lead shielding step) In the shielding step, as shown in FIG. 11D and FIG. 13B , the electro-deposition lead 41 is shielded. That is, the upper surface and the side surface of the electro-deposition lead 41 are covered with a shielding sheet 46 .

作為遮蔽薄片46,例如可列舉具有微黏著性之隔膜。As the masking sheet 46, for example, a slightly adhesive membrane can be cited.

藉此,於下述電沈積步驟中,能夠防止覆蓋絕緣層4被覆於電沈積引線41,而於下述引線蝕刻步驟中確實地去除電沈積引線41。Thereby, in the following electro-deposition step, the covering insulating layer 4 can be prevented from covering the electro-deposited lead 41, and the electro-deposited lead 41 can be surely removed in the following lead etching step.

(電沈積步驟) 於電沈積步驟中,如圖11E及圖13C所示,藉由電沈積而以覆蓋絕緣層4被覆配線圖案3。(Electrodeposition step) In the electrodeposition step, as shown in FIG. 11E and FIG. 13C , the wiring pattern 3 is covered with a covering insulating layer 4 by electrodeposition.

具體而言,藉由將被遮蔽之第2被電沈積體45浸漬於含電沈積塗料之液體,繼而,對第2被電沈積體45施加電流,而使電沈積塗料析出至配線圖案3,繼而,使析出之電沈積塗料乾燥。Specifically, the masked second electrodeposited object 45 is immersed in a liquid containing an electrodeposited coating, and then a current is applied to the second electrodeposited object 45 to deposit the electrodeposited coating on the wiring pattern 3. Then, the deposited electrodeposited coating is dried.

為了對第2被電沈積體45施加電流,將連接於外部電源之引線(未圖示)連接於第2引線部44之端部。藉此,經由引線及電沈積引線41,對配線圖案3整體施加直流電流。In order to apply current to the second electrodeposited body 45, a lead (not shown) connected to an external power source is connected to the end of the second lead portion 44. Thus, a direct current is applied to the entire wiring pattern 3 via the lead and the electrodeposition lead 41.

電沈積條件與第1實施形態相同。The electro-deposition conditions are the same as those in the first embodiment.

藉此,於配線圖案3之上表面及側面形成覆蓋絕緣層4(電沈積塗裝膜)。Thereby, a covering insulating layer 4 (electrodeposition coating film) is formed on the upper surface and side surfaces of the wiring pattern 3.

(遮蔽去除步驟) 於遮蔽去除中,如圖12F及圖14D所示,去除遮蔽薄片46。即,自電沈積引線41將遮蔽薄片46剝離。(Mask removal step) In the mask removal, as shown in FIG. 12F and FIG. 14D, the mask sheet 46 is removed. That is, the mask sheet 46 is peeled off from the electroplated lead 41.

藉此,電沈積引線41之表面露出。Thereby, the surface of the electro-deposited lead 41 is exposed.

(引線去除步驟) 於引線去除步驟中,如圖12G及圖14E所示,去除電沈積引線41。即,藉由蝕刻,自導體圖案42去除電沈積引線41。(Lead Removal Step) In the lead removal step, as shown in FIG. 12G and FIG. 14E, the electro-deposited lead 41 is removed. That is, the electro-deposited lead 41 is removed from the conductor pattern 42 by etching.

作為蝕刻,例如可列舉上述濕式蝕刻。As etching, for example, the above-mentioned wet etching can be cited.

此時,配線圖案3係由覆蓋絕緣層4被覆,故而不會藉由蝕刻被去除。At this time, the wiring pattern 3 is covered by the cover insulating layer 4 and thus will not be removed by etching.

藉此,獲得依序具備支持膜15、基底絕緣層2、配線圖案3及覆蓋絕緣層4之第1中間物47。Thus, the first intermediate 47 including the support film 15, the base insulating layer 2, the wiring pattern 3 and the cover insulating layer 4 in sequence is obtained.

於第1中間物47中,配線圖案3之後端緣之側面未由覆蓋絕緣層4被覆。即,配線圖案3(具體而言,左側之端子部23)於後端緣側面具有自覆蓋絕緣層4露出之露出側面48。In the first intermediate 47, the rear edge side of the wiring pattern 3 is not covered by the cover insulating layer 4. That is, the wiring pattern 3 (specifically, the terminal portion 23 on the left side) has an exposed side 48 exposed from the cover insulating layer 4 on the rear edge side.

(第1磁性層配置步驟) 於第1磁性層配置步驟中,如圖12H及圖14F所示,於基底絕緣層2及覆蓋絕緣層4之上側配置第1磁性層5。(First magnetic layer configuration step) In the first magnetic layer configuration step, as shown in FIG. 12H and FIG. 14F, the first magnetic layer 5 is configured on the upper side of the base insulating layer 2 and the cover insulating layer 4.

第1磁性層配置步驟係與第1實施形態相同。The first magnetic layer configuration step is the same as that of the first embodiment.

其後,藉由剝離將支持膜15自基底絕緣層2去除。Thereafter, the support film 15 is removed from the base insulating layer 2 by peeling.

藉此,獲得依序具備基底絕緣層2、配線圖案3、覆蓋絕緣層4及第1磁性層5之第2中間物49。於第2中間物49中,露出側面48與第1磁性層5接觸。Thus, a second intermediate 49 is obtained which has the base insulating layer 2, the wiring pattern 3, the cover insulating layer 4 and the first magnetic layer 5 in sequence. In the second intermediate 49, the side surface 48 is exposed and in contact with the first magnetic layer 5.

(第2磁性層配置步驟) 於第2磁性層步驟中,如圖12I所示,於基底絕緣層2之下側配置第2磁性層18。即,於基底絕緣層2之下表面經由接著劑層19配置覆蓋絕緣層4。(Second magnetic layer configuration step) In the second magnetic layer configuration step, as shown in FIG12I , the second magnetic layer 18 is configured on the lower side of the base insulating layer 2. That is, the covering insulating layer 4 is configured on the lower surface of the base insulating layer 2 via the adhesive layer 19.

第2磁性層配置步驟係與第1實施形態相同。The second magnetic layer configuration step is the same as that of the first embodiment.

藉此,可獲得第2實施形態之電感器1。In this way, the inductor 1 of the second embodiment can be obtained.

(電感器) 電感器1沿厚度方向依序具備第2磁性層18、接著劑層19、基底絕緣層2、導體圖案42、覆蓋絕緣層4及第1磁性層5。該等構件除特別記載以外與第1實施形態之構件相同。(Inductor) The inductor 1 has a second magnetic layer 18, an adhesive layer 19, a base insulating layer 2, a conductive pattern 42, a cover insulating layer 4, and a first magnetic layer 5 in order along the thickness direction. These components are the same as those of the first embodiment except for any special description.

第2實施形態之基底絕緣層2不具備貫通孔6及對準標記7。即,基底絕緣層2之下表面整個面與接著劑層19之上表面整個面接觸。又,接著劑層19不與配線圖案3及第2磁性層18接觸。The base insulating layer 2 of the second embodiment does not have the through hole 6 and the alignment mark 7. That is, the entire lower surface of the base insulating layer 2 is in contact with the entire upper surface of the adhesive layer 19. In addition, the adhesive layer 19 is not in contact with the wiring pattern 3 and the second magnetic layer 18.

於第2實施形態之電感器1中,一端子部23之露出側面48與第1磁性層5接觸。In the inductor 1 of the second embodiment, an exposed side surface 48 of a terminal portion 23 is in contact with the first magnetic layer 5 .

關於第2實施形態之電感器1之製造方法及根據其製造之電感器1,亦發揮與第1實施形態之製造方法及電感器1相同之作用效果。The manufacturing method of the inductor 1 of the second embodiment and the inductor 1 manufactured thereby also exert the same effects as the manufacturing method and the inductor 1 of the first embodiment.

又,關於第2實施形態之變化例,亦可設為與第1實施形態之變化例相同。Furthermore, the variation of the second embodiment may be the same as the variation of the first embodiment.

再者,上述發明係作為本發明之例示之實施形態而提供,但其僅為例示,不可限定地進行解釋。該技術領域之業者所知曉之本發明之變化例包含於下述申請專利範圍。 [產業上之可利用性]Furthermore, the above invention is provided as an exemplary embodiment of the present invention, but it is only an example and cannot be interpreted in a limiting sense. Variations of the present invention known to those skilled in the art are included in the scope of the following patent application. [Industrial Applicability]

電感器例如搭載於電子機器等。Inductors are installed in electronic devices, for example.

1‧‧‧電感器 2‧‧‧基底絕緣層 3‧‧‧配線圖案 4‧‧‧覆蓋絕緣層 4a‧‧‧第1覆蓋絕緣部 4b‧‧‧第2覆蓋絕緣部 4c‧‧‧第3覆蓋絕緣部 4d‧‧‧第4覆蓋絕緣部 5‧‧‧第1磁性層 6‧‧‧貫通孔 7‧‧‧對準標記 10‧‧‧金屬薄片 11‧‧‧標記用孔 12‧‧‧金屬薄膜 13‧‧‧第1露出面 14‧‧‧第2露出面 15‧‧‧支持膜 16‧‧‧乾膜光阻 17‧‧‧第1被電沈積體 18‧‧‧第2磁性層 19‧‧‧接著劑層 21‧‧‧配線部 21a‧‧‧第1配線部 21b‧‧‧第2配線部 22‧‧‧連接配線部 23‧‧‧端子部 24‧‧‧配線部間 25‧‧‧通孔 26‧‧‧連接構件 30‧‧‧第1防擴散層 31‧‧‧配線下部 32‧‧‧配線主部 33‧‧‧第2防擴散層 40‧‧‧導電片材積層體(金屬薄片積層體) 41‧‧‧電沈積引線 42‧‧‧導體圖案 43‧‧‧第1引線部 44‧‧‧第2引線部 45‧‧‧第2被電沈積體 46‧‧‧保護片材(遮蔽薄片) 47‧‧‧第1中間物 48‧‧‧露出側面 49‧‧‧第2中間物 51‧‧‧基底絕緣層 52‧‧‧配線部 53‧‧‧覆蓋層膜 54‧‧‧磁性薄片 55‧‧‧部位1‧‧‧Inductor 2‧‧‧Base insulation layer 3‧‧‧Wiring pattern 4‧‧‧Coating insulation layer 4a‧‧‧1st covering insulation part 4b‧‧‧2nd covering insulation part 4c‧‧‧3rd covering insulation part 4d‧‧‧4th covering insulation part 5‧‧‧1st magnetic layer 6‧‧‧Through hole 7‧‧‧Alignment mark 10‧‧‧Metal sheet 11‧ ‧‧Marking hole 12‧‧‧Metal film 13‧‧‧First exposed surface 14‧‧‧Second exposed surface 15‧‧‧Support film 16‧‧‧Dry film photoresist 17‧‧‧First electrodeposited body 18‧‧‧Second magnetic layer 19‧‧‧Adhesive layer 21‧‧‧Wiring section 21a‧‧‧First wiring section 21b‧‧‧Second wiring section 22‧‧‧ Connecting wiring part 23‧‧‧Terminal part 24‧‧‧Wiring part 25‧‧‧Through hole 26‧‧‧Connecting member 30‧‧‧1st anti-diffusion layer 31‧‧‧Wiring lower part 32‧‧‧Wiring main part 33‧‧‧2nd anti-diffusion layer 40‧‧‧Conductive sheet laminate (metal sheet laminate) 41‧‧‧Electrodeposited lead 42‧‧‧Conductive pattern 43‧‧‧1st lead part 44‧‧‧2nd lead part 45‧‧‧2nd electrodeposited body 46‧‧‧Protective sheet (shielding sheet) 47‧‧‧1st intermediate 48‧‧‧Exposed side 49‧‧‧2nd intermediate 51‧‧‧Base insulating layer 52‧‧‧Wiring part 53‧‧‧Coating film 54‧‧‧Magnetic sheet 55‧‧‧Part

圖1表示本發明之電感器之第1實施形態之俯視圖。 圖2A及2B係圖1之剖視圖,圖2A表示A-A剖視圖,圖2B表示B-B剖視圖。 圖3A~圖3F係圖1所示之電感器之製造步驟之剖視圖(圖1之A-A剖視圖),圖3A表示準備金屬薄片之步驟,圖3B表示配置基底絕緣層之步驟,圖3C表示配置金屬薄膜之步驟,圖3D表示配置支持膜之步驟,圖3E表示形成配線圖案之步驟,圖3F表示實施電沈積之步驟。 圖4G~圖4J係繼圖3後之電感器之製造步驟之剖視圖(圖1之A-A剖視圖),圖4G表示配置第1磁性層之步驟,圖4H表示去除支持膜之步驟,圖4I表示去除金屬薄膜之步驟,圖4J表示配置接著劑層及第2磁性層之步驟。 圖5A~圖5F係圖1所示之電感器之製造步驟之剖視圖(圖1之B-B剖視圖),圖5A表示準備金屬薄片之步驟,圖5B表示配置基底絕緣層之步驟,圖5C表示配置金屬薄膜之步驟,圖5D表示配置支持膜之步驟,圖5E表示形成配線圖案之步驟,圖5F表示實施電沈積之步驟。 圖6G~圖6J係繼圖5後之電感器之製造步驟之剖視圖(圖1之B-B剖視圖),圖6G表示配置第1磁性層之步驟,圖6H表示去除支持膜之步驟,圖6I表示去除金屬薄膜之步驟,圖6J表示配置接著劑層及第2磁性層之步驟。 圖7表示圖1所示之電感器之使用形態之剖視圖。 圖8A及圖8B係第1實施形態之電感器之製造方法之第1變化例(配置第1防擴散層之方法),圖8A表示配置第1防擴散層之步驟圖,圖8B表示於配置有第1防擴散層之情形時所獲得之電感器之剖視圖。 圖9A及圖9B係第1實施形態之電感器之製造方法之第2變化例(配置第2防擴散層之方法),圖9A表示配置第2防擴散層之步驟圖,圖9B表示於配置有第2防擴散層之情形時所獲得之電感器之剖視圖。 圖10A~圖10C係第1實施形態之電感器之變化例,圖10A表示配線圖案朝向前後方向前進之彎曲形狀,圖10B表示配線圖案朝向左右方向前進之彎曲形狀,圖10C表示配線圖案為圓形狀之環形狀。 圖11A~圖11E係本發明之電感器之第2實施形態之製造步驟之剖視圖(圖13之A-A剖視圖),圖11A表示準備金屬薄片積層體之步驟,圖11B表示配置支持膜之步驟,圖11C表示形成配線圖案之步驟,圖11D表示遮蔽電沈積引線之步驟,圖11E表示實施電沈積之步驟。 圖12F~圖12I係繼圖11後之電感器之製造步驟之剖視圖,圖12F表示去除遮蔽薄片之步驟,圖12G表示去除電沈積引線之步驟,圖12H表示配置第1磁性層之步驟,圖12I表示配置接著劑層及第2磁性層之步驟。 圖13A~圖13C係本發明之電感器之第2實施形態之製造步驟之俯視圖,圖13A表示形成配線圖案之步驟,圖13B表示遮蔽電沈積引線之步驟,圖13C表示實施電沈積之步驟。 圖14D~圖14F係繼圖13後之電感器之製造步驟之俯視圖,圖14D表示去除遮蔽薄片之步驟,圖14E表示去除電沈積引線之步驟,圖14F表示配置第1磁性層之步驟。 圖15表示成為參考例之電感器之剖視圖。FIG1 shows a top view of the first embodiment of the inductor of the present invention. FIG2A and FIG2B are cross-sectional views of FIG1, FIG2A shows an A-A cross-sectional view, and FIG2B shows a B-B cross-sectional view. FIG3A to FIG3F are cross-sectional views of the manufacturing steps of the inductor shown in FIG1 (A-A cross-sectional view of FIG1), FIG3A shows a step of preparing a metal sheet, FIG3B shows a step of configuring a base insulating layer, FIG3C shows a step of configuring a metal film, FIG3D shows a step of configuring a support film, FIG3E shows a step of forming a wiring pattern, and FIG3F shows a step of performing electroplating. Figures 4G to 4J are cross-sectional views of the manufacturing steps of the inductor following Figure 3 (A-A cross-sectional view of Figure 1). Figure 4G shows the step of configuring the first magnetic layer, Figure 4H shows the step of removing the support film, Figure 4I shows the step of removing the metal film, and Figure 4J shows the step of configuring the adhesive layer and the second magnetic layer. Figures 5A to 5F are cross-sectional views of the manufacturing steps of the inductor shown in Figure 1 (B-B cross-sectional view of Figure 1), Figure 5A shows the step of preparing a metal sheet, Figure 5B shows the step of configuring a base insulating layer, Figure 5C shows the step of configuring a metal film, Figure 5D shows the step of configuring a support film, Figure 5E shows the step of forming a wiring pattern, and Figure 5F shows the step of performing electroplating. Fig. 6G to Fig. 6J are cross-sectional views of the manufacturing steps of the inductor following Fig. 5 (B-B cross-sectional view of Fig. 1), Fig. 6G shows the step of configuring the first magnetic layer, Fig. 6H shows the step of removing the support film, Fig. 6I shows the step of removing the metal film, and Fig. 6J shows the step of configuring the adhesive layer and the second magnetic layer. Fig. 7 shows a cross-sectional view of the inductor shown in Fig. 1 in the form of use. Fig. 8A and Fig. 8B are the first variation of the manufacturing method of the inductor of the first embodiment (the method of configuring the first anti-diffusion layer), Fig. 8A shows the step of configuring the first anti-diffusion layer, and Fig. 8B shows the cross-sectional view of the inductor obtained when the first anti-diffusion layer is configured. FIG. 9A and FIG. 9B are a second variation of the manufacturing method of the inductor of the first embodiment (a method of configuring the second anti-diffusion layer). FIG. 9A shows a step diagram of configuring the second anti-diffusion layer, and FIG. 9B shows a cross-sectional view of the inductor obtained when the second anti-diffusion layer is configured. FIG. 10A to FIG. 10C are variations of the inductor of the first embodiment. FIG. 10A shows a curved shape of the wiring pattern advancing in the front-rear direction, FIG. 10B shows a curved shape of the wiring pattern advancing in the left-right direction, and FIG. 10C shows a circular ring shape of the wiring pattern. Figures 11A to 11E are cross-sectional views of the manufacturing steps of the second embodiment of the inductor of the present invention (A-A cross-sectional view of Figure 13), Figure 11A shows the step of preparing a metal sheet laminate, Figure 11B shows the step of configuring a support film, Figure 11C shows the step of forming a wiring pattern, Figure 11D shows the step of shielding an electro-deposition lead, and Figure 11E shows the step of performing electro-deposition. Fig. 12F to Fig. 12I are cross-sectional views of the manufacturing steps of the inductor following Fig. 11, Fig. 12F shows the step of removing the shielding sheet, Fig. 12G shows the step of removing the electro-deposition lead, Fig. 12H shows the step of configuring the first magnetic layer, and Fig. 12I shows the step of configuring the adhesive layer and the second magnetic layer. Fig. 13A to Fig. 13C are top views of the manufacturing steps of the second embodiment of the inductor of the present invention, Fig. 13A shows the step of forming the wiring pattern, Fig. 13B shows the step of shielding the electro-deposition lead, and Fig. 13C shows the step of performing electro-deposition. FIG. 14D to FIG. 14F are top views of the manufacturing steps of the inductor following FIG. 13 , FIG. 14D shows the step of removing the masking sheet, FIG. 14E shows the step of removing the electro-deposition lead, and FIG. 14F shows the step of configuring the first magnetic layer. FIG. 15 shows a cross-sectional view of an inductor used as a reference example.

1‧‧‧電感器 1‧‧‧Inductor

3‧‧‧配線圖案 3‧‧‧Wiring diagram

4‧‧‧覆蓋絕緣層 4‧‧‧Covering insulation layer

4a‧‧‧第1覆蓋絕緣部 4a‧‧‧The first covering insulation part

4c‧‧‧第3覆蓋絕緣部 4c‧‧‧Third covering insulation part

4d‧‧‧第4覆蓋絕緣部 4d‧‧‧The fourth covering insulation part

5‧‧‧第1磁性層 5‧‧‧1st magnetic layer

6‧‧‧貫通孔 6‧‧‧Through hole

7‧‧‧對準標記 7‧‧‧Alignment mark

11‧‧‧標記用孔 11‧‧‧Marking hole

21‧‧‧配線部 21‧‧‧Wiring department

21a‧‧‧第1配線部 21a‧‧‧1st wiring section

21b‧‧‧第2配線部 21b‧‧‧Second wiring section

22‧‧‧連接配線部 22‧‧‧Connection wiring section

23‧‧‧端子部 23‧‧‧Terminal section

24‧‧‧配線部間 24‧‧‧Wiring department

Claims (8)

一種配線基板之製造方法,其特徵在於具備:配線形成步驟,其係於第1絕緣層之厚度方向一側形成於特定方向上相互隔開間隔地配置之複數個配線部;電沈積步驟,其係藉由電沈積而以第2絕緣層被覆上述配線部以使於在特定方向上彼此相鄰之上述配線部間不連續;以及磁性層配置步驟,其係於上述第1絕緣層及上述第2絕緣層之厚度方向一側配置磁性層,其中上述電沈積步驟包含經由沿厚度方向投影時與上述配線部重疊之上述第1絕緣層之貫通孔,對上述配線部供電之步驟;於上述配線形成步驟之前,更具備導體層配置步驟,其係形成被覆上述第1絕緣層之厚度方向另一面、上述貫通孔之內壁面、及配置於上述第1絕緣層之厚度方向一側之金屬薄片中自上述貫通孔露出之露出面之金屬薄膜作為導體層;上述配線形成步驟係藉由對上述金屬薄片實施減成法形成上述配線部;上述電沈積步驟係經由上述金屬薄膜施加於上述配線部;且於上述電沈積步驟之後,更具備導體層去除步驟,其係去除上述金屬薄膜。 A method for manufacturing a wiring substrate, characterized by comprising: a wiring forming step, which is to form a plurality of wiring portions arranged at intervals in a specific direction on one side of a first insulating layer in a thickness direction; an electro-deposition step, which is to cover the wiring portions with a second insulating layer by electro-deposition so that the wiring portions adjacent to each other in the specific direction are discontinuous; and a magnetic layer arranging step, which is to arrange a magnetic layer on one side of the first insulating layer and the second insulating layer in a thickness direction, wherein the electro-deposition step includes a through hole in the first insulating layer that overlaps with the wiring portion when projected in the thickness direction, The step of supplying power to the wiring part; before the wiring forming step, there is a step of configuring a conductive layer, which is to form a metal film covering the other side of the thickness direction of the first insulating layer, the inner wall surface of the through hole, and the exposed surface of the metal film exposed from the through hole in the metal film configured on one side of the thickness direction of the first insulating layer as a conductive layer; the wiring forming step is to form the wiring part by performing a subtractive method on the metal film; the electro-deposition step is to apply the metal film to the wiring part; and after the electro-deposition step, there is a step of removing the conductive layer, which is to remove the metal film. 如請求項1之配線基板之製造方法,其更具備:於上述導體層配置步驟之後且上述配線形成步驟之前,於上述金屬薄膜之厚度方向另一面配置 支持膜之步驟;以及於上述電沈積步驟之後且上述導體層去除步驟之前,去除上述支持膜之步驟。 The manufacturing method of the wiring substrate as claimed in claim 1 further comprises: a step of configuring a support film on the other side of the thickness direction of the metal film after the above-mentioned conductor layer configuration step and before the above-mentioned wiring formation step; and a step of removing the above-mentioned support film after the above-mentioned electroplating step and before the above-mentioned conductor layer removal step. 如請求項1或2之配線基板之製造方法,其中上述第1絕緣層具備用以於上述貫通孔之厚度方向一側形成上述配線部之定位部。 A method for manufacturing a wiring substrate as claimed in claim 1 or 2, wherein the first insulating layer has a positioning portion for forming the wiring portion on one side of the through hole in the thickness direction. 如請求項1或2之配線基板之製造方法,其中上述配線部具備銅配線。 A method for manufacturing a wiring substrate as claimed in claim 1 or 2, wherein the wiring portion has copper wiring. 如請求項3之配線基板之製造方法,其中上述配線部具備銅配線。 A method for manufacturing a wiring substrate as claimed in claim 3, wherein the wiring portion has copper wiring. 一種配線基板,其特徵在於具備:第1絕緣層;複數個配線部,其等於上述第1絕緣層之厚度方向一側,於特定方向上相互隔開間隔地配置;第2絕緣層,其被覆上述複數個配線部之各者以使其等於在特定方向上彼此相鄰之配線部間不連續;以及磁性層,其於上述第1絕緣層及上述第2絕緣層之厚度方向一側,以被覆上述第1絕緣層之厚度方向一面之方式配置,其中上述第1絕緣層具有沿厚度方向投影時與上述配線部重疊之貫通孔;上述貫通孔係用於藉由電沈積而以上述第2絕緣層被覆上述配線部時之供電; 上述第1絕緣層具備用以於上述貫通孔之厚度方向一側形成上述配線部之定位部;上述定位部沿厚度方向投影時不與上述配線部重疊;且上述配線部不具有經由上述貫通孔之電性連接。 A wiring substrate, characterized by comprising: a first insulating layer; a plurality of wiring sections, which are arranged at intervals in a specific direction on one side of the thickness direction of the first insulating layer; a second insulating layer, which covers each of the plurality of wiring sections so that the wiring sections adjacent to each other in the specific direction are not continuous; and a magnetic layer, which covers one side of the thickness direction of the first insulating layer and the second insulating layer so as to cover one side of the thickness direction of the first insulating layer. The first insulating layer is configured in a manner, wherein the first insulating layer has a through hole that overlaps with the wiring portion when projected in the thickness direction; the through hole is used to supply power when the wiring portion is covered with the second insulating layer by electroplating; the first insulating layer has a positioning portion for forming the wiring portion on one side of the through hole in the thickness direction; the positioning portion does not overlap with the wiring portion when projected in the thickness direction; and the wiring portion does not have an electrical connection through the through hole. 如請求項6之配線基板,其中上述複數個配線部配置於共通之上述第1絕緣層之厚度方向一側,上述第2絕緣層被覆上述複數個配線部之厚度方向一面及側面。 As in claim 6, the wiring substrate, wherein the plurality of wiring parts are arranged on one side of the common first insulating layer in the thickness direction, and the second insulating layer covers one side and the side surface of the plurality of wiring parts in the thickness direction. 如請求項6或7之配線基板,其中上述第1絕緣層之厚度為0.5μm以上、10μm以下。In the wiring substrate of claim 6 or 7, the thickness of the first insulating layer is greater than or equal to 0.5 μm and less than or equal to 10 μm.
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