TWI854793B - Substrate cleaning brush and substrate cleaning device - Google Patents
Substrate cleaning brush and substrate cleaning device Download PDFInfo
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- TWI854793B TWI854793B TW112131353A TW112131353A TWI854793B TW I854793 B TWI854793 B TW I854793B TW 112131353 A TW112131353 A TW 112131353A TW 112131353 A TW112131353 A TW 112131353A TW I854793 B TWI854793 B TW I854793B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 592
- 239000000758 substrate Substances 0.000 title claims abstract description 501
- 230000005489 elastic deformation Effects 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 58
- 238000001179 sorption measurement Methods 0.000 description 53
- 239000007789 gas Substances 0.000 description 50
- 230000002093 peripheral effect Effects 0.000 description 28
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 24
- 239000007787 solid Substances 0.000 description 24
- 239000007921 spray Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 21
- 239000000356 contaminant Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000012530 fluid Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
本發明之基板洗淨刷包含洗淨部,用於基板之洗淨。洗淨部具有可於基板之洗淨時與基板接觸之洗淨面。於洗淨面形成切口。洗淨面藉由切口被劃分為複數個洗淨區塊。於洗淨面與基板接觸時,藉由洗淨部之彈性變形,各洗淨區塊與相鄰於該洗淨區塊之洗淨區塊相互接觸。The substrate cleaning brush of the present invention includes a cleaning part for cleaning a substrate. The cleaning part has a cleaning surface that can contact the substrate when cleaning the substrate. A cutout is formed on the cleaning surface. The cleaning surface is divided into a plurality of cleaning blocks by the cutout. When the cleaning surface contacts the substrate, each cleaning block contacts the cleaning block adjacent to the cleaning block by elastic deformation of the cleaning part.
Description
本發明關於一種洗淨基板之基板洗淨刷及基板洗淨裝置。The present invention relates to a substrate cleaning brush and a substrate cleaning device for cleaning a substrate.
為了對用於液晶顯示裝置或有機EL(Electro Luminescence:電致發光)顯示裝置等之FPD(Flat Panel Display:平板顯示器)用基板、半導體基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等之各種基板進行各種處理,使用基板處理裝置。為了洗淨基板,使用基板洗淨裝置。Substrate processing equipment is used to process various substrates such as FPD (Flat Panel Display) substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, semiconductor substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, mask substrates, ceramic substrates, or solar cell substrates. Substrate cleaning equipment is used to clean substrates.
例如,於日本專利特開2022-84287號公報所記載之基板洗淨裝置中,記載有包含下表面刷之基板洗淨裝置。下表面刷包含具有圓板形狀之基台部、與自基台部之上表面向上方突出般之第1及第2洗淨部。第1洗淨部於俯視時通過基台部之幾何學中心而於基台部之徑向延伸。第2洗淨部以沿基台部之外緣之方式配置。藉由於下表面刷之第1及第2洗淨部接觸基板之下表面之狀態下使基台部旋轉,去除附著於基板之下表面之污染物。For example, in the substrate cleaning device described in Japanese Patent Gazette No. 2022-84287, there is described a substrate cleaning device including a lower surface brush. The lower surface brush includes a base portion having a circular plate shape, and first and second cleaning portions protruding upward from the upper surface of the base portion. The first cleaning portion extends radially of the base portion through the geometric center of the base portion when viewed from above. The second cleaning portion is arranged along the outer edge of the base portion. By rotating the base portion while the first and second cleaning portions of the lower surface brush are in contact with the lower surface of the substrate, contaminants attached to the lower surface of the substrate are removed.
根據日本專利特開2022-84287號公報所記載之下表面刷,將可洗淨之區域維持得較大,且防止對基板施加過度之載荷。藉此,可高效地洗淨基板之下表面。然而,於日本專利特開2022-84287號公報所記載之下表面刷中,有時無法高效地洗淨基板。因此,期望提高洗淨效率。According to the lower surface brush described in Japanese Patent Publication No. 2022-84287, the area that can be cleaned is maintained larger, and excessive load is prevented from being applied to the substrate. In this way, the lower surface of the substrate can be cleaned efficiently. However, in the lower surface brush described in Japanese Patent Publication No. 2022-84287, the substrate cannot be cleaned efficiently sometimes. Therefore, it is desired to improve the cleaning efficiency.
本發明之目的在於提供一種可高效地洗淨基板之基板洗淨刷及基板洗淨裝置。The object of the present invention is to provide a substrate cleaning brush and a substrate cleaning device that can efficiently clean a substrate.
本發明之一態樣之基板洗淨刷係用於基板之洗淨者,具備:洗淨部,其具有可於上述基板之洗淨時與上述基板接觸之洗淨面,且於上述洗淨面形成切口;且上述洗淨面藉由上述切口劃分為複數個洗淨區塊;於上述洗淨面與上述基板之接觸時,藉由上述洗淨部之彈性變形,各洗淨區塊、與相鄰於該洗淨區塊之洗淨區塊相互接觸。One aspect of the substrate cleaning brush of the present invention is used for cleaning a substrate, and comprises: a cleaning portion having a cleaning surface that can contact the substrate when the substrate is cleaned, and a cutout is formed on the cleaning surface; and the cleaning surface is divided into a plurality of cleaning blocks by the cutouts; when the cleaning surface contacts the substrate, each cleaning block contacts the cleaning block adjacent to the cleaning block by elastic deformation of the cleaning portion.
本發明之其他態樣之基板洗淨裝置具備:基板保持部,其保持上述基板;及技術方案1至8中任一項所記載之基板洗淨刷,其洗淨藉由上述基板保持部保持之上述基板。 [發明之效果] The substrate cleaning device of another aspect of the present invention comprises: a substrate holding portion, which holds the above-mentioned substrate; and a substrate cleaning brush described in any one of technical solutions 1 to 8, which cleans the above-mentioned substrate held by the above-mentioned substrate holding portion. [Effect of the invention]
根據本發明,可高效地洗淨基板。According to the present invention, the substrate can be cleaned efficiently.
以下,使用圖式,對本發明之實施形態之基板洗淨刷及基板洗淨裝置進行說明。於以下之說明中,基板意指半導體基板、液晶顯示裝置或有機EL(Electro Luminescence)顯示裝置等之FPD(Flat Panel Display)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等。The following uses drawings to describe the substrate cleaning brush and substrate cleaning device of the embodiment of the present invention. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display device or an organic EL (Electro Luminescence) display device FPD (Flat Panel Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a mask substrate, a ceramic substrate or a solar cell substrate.
1.第1實施形態 (1)基板洗淨刷之構成 圖1係包含本發明之第1實施形態之基板洗淨刷之刷單元之外觀立體圖。如圖1所示,刷單元300包含基板洗淨刷100及刷基座200。藉由於刷基座200上安裝基板洗淨刷100,構成刷單元300。 1. First Implementation Form (1) Structure of Substrate Cleaning Brush FIG. 1 is a perspective view of a brush unit including a substrate cleaning brush of the first implementation form of the present invention. As shown in FIG. 1 , the brush unit 300 includes a substrate cleaning brush 100 and a brush base 200. The brush unit 300 is formed by mounting the substrate cleaning brush 100 on the brush base 200.
於本例中,基板洗淨刷100為洗淨基板之下表面之下表面刷。基板洗淨刷100可由例如PVA(Polyvinyl alcohol:聚乙烯醇)或PTFE(Polytetrafluoroethylene:聚四氟乙烯)等之較軟質之樹脂材料形成。刷基座200可由例如PVC(Polyvinyl chloride:聚氯乙烯)或PP(Polypropylene:聚丙烯)等之較硬質之樹脂形成。In this example, the substrate cleaning brush 100 is a brush for cleaning the lower surface of the substrate. The substrate cleaning brush 100 can be formed of a relatively soft resin material such as PVA (Polyvinyl alcohol) or PTFE (Polytetrafluoroethylene). The brush base 200 can be formed of a relatively hard resin such as PVC (Polyvinyl chloride) or PP (Polypropylene).
圖2係圖1之基板洗淨刷100之外觀立體圖。圖3係圖1之基板洗淨刷100之俯視圖。如圖2及圖3所示,基板洗淨刷100包含基台部110及洗淨部120、130。基台部110具有圓板形狀。於俯視時,定義基台部110之幾何學之中心點101(圖3)。FIG. 2 is a perspective view of the substrate cleaning brush 100 of FIG. 1 . FIG. 3 is a top view of the substrate cleaning brush 100 of FIG. 1 . As shown in FIG. 2 and FIG. 3 , the substrate cleaning brush 100 includes a base portion 110 and cleaning portions 120 and 130. The base portion 110 has a circular plate shape. When viewed from above, a geometric center point 101 of the base portion 110 is defined ( FIG. 3 ).
洗淨部120、130以自基台部110之上表面向上方突出之方式形成於基台部110之上表面。洗淨部120、130相對於基台部110之上表面之突出量例如為5 mm~6 mm。洗淨部120、130之上表面成為用於洗淨基板W之下表面之洗淨面。The cleaning parts 120 and 130 are formed on the upper surface of the base part 110 so as to protrude upward from the upper surface of the base part 110. The protrusion amount of the cleaning parts 120 and 130 relative to the upper surface of the base part 110 is, for example, 5 mm to 6 mm. The upper surfaces of the cleaning parts 120 and 130 serve as cleaning surfaces for cleaning the lower surface of the substrate W.
洗淨部120具有於一方向延伸之洗淨面,以通過基台部110之中心點101而於基台部110之徑向延伸之方式配置。洗淨部130具有圓環形狀,以沿基台部110之外緣之方式配置。洗淨部130亦可與洗淨部120之兩端接觸。洗淨部120之寬度與洗淨部130之寬度可相等,亦可不同。The cleaning part 120 has a cleaning surface extending in one direction, and is arranged in a manner of passing through the center point 101 of the base part 110 and extending in the radial direction of the base part 110. The cleaning part 130 has a circular ring shape, and is arranged along the outer edge of the base part 110. The cleaning part 130 may also contact both ends of the cleaning part 120. The width of the cleaning part 120 may be equal to or different from the width of the cleaning part 130.
於基台部110形成複數個貫通孔111、複數個貫通孔112及複數個貫通孔113。各貫通孔111~113於上下方向延伸。貫通孔111用於連接基台部110與圖1之刷基座200,於本例中設置10個。具體而言,8個貫通孔111以大致等角度間隔配置於基台部110之周緣區域。2個貫通孔111以隔著洗淨部120而對向之方式配置於基台部110之中央區域。A plurality of through holes 111, a plurality of through holes 112, and a plurality of through holes 113 are formed on the base portion 110. Each of the through holes 111 to 113 extends in the up-down direction. The through holes 111 are used to connect the base portion 110 with the brush base 200 of FIG. 1, and 10 through holes 111 are provided in this example. Specifically, 8 through holes 111 are arranged at approximately equal angles in the peripheral area of the base portion 110. Two through holes 111 are arranged in the central area of the base portion 110 in a manner of facing each other across the cleaning portion 120.
貫通孔112用於將刷基座200、與使刷單元300旋轉之馬達等連接,於本例中設置4個。4個貫通孔112以包圍基台部110之中心點101之方式,以大致等角度間隔配置於基台部110之中央區域。貫通孔113用於排出基板洗淨時之洗淨液,於本例中設置10個。10個貫通孔113以沿洗淨部130之方式,規則地配置於基台部110之周緣區域。The through holes 112 are used to connect the brush base 200 and the motor for rotating the brush unit 300, and four through holes 112 are provided in this example. The four through holes 112 are arranged at approximately equal angles in the central area of the base part 110 in a manner of surrounding the center point 101 of the base part 110. The through holes 113 are used to discharge the cleaning liquid when cleaning the substrate, and ten through holes 113 are provided in this example. The ten through holes 113 are regularly arranged in the peripheral area of the base part 110 in a manner of following the cleaning part 130.
於洗淨部120、130之洗淨面形成複數個切口102。藉此,洗淨部120、130之洗淨面被劃分為複數個洗淨區塊103。於本例中,於洗淨部120,形成通過中心點101與洗淨部120延伸之方向平行之1個切口102,且形成與洗淨部120延伸之方向正交之多個切口102。又,於洗淨部130形成以中心點101為中心之放射狀之多個切口102。A plurality of cutouts 102 are formed on the cleaning surfaces of the cleaning parts 120 and 130. Thus, the cleaning surfaces of the cleaning parts 120 and 130 are divided into a plurality of cleaning areas 103. In this example, one cutout 102 is formed in the cleaning part 120, which passes through the center point 101 and is parallel to the direction in which the cleaning part 120 extends, and a plurality of cutouts 102 are formed which are orthogonal to the direction in which the cleaning part 120 extends. In addition, a plurality of radial cutouts 102 are formed in the cleaning part 130, which are centered on the center point 101.
藉由於洗淨部120、130之洗淨面形成複數個切口102,而減少洗淨部120、130之洗淨面之剛性。圖4係顯示洗淨部120之一部分之放大立體圖。如圖4所示,各切口102之深度為d,各切口102之寬度為w。成為洗淨面之各洗淨區塊103之上表面之面積為S。切口102之深度d越大,洗淨部120、130之洗淨面之剛性越小。又,洗淨區塊103之面積S越小,洗淨部120、130之洗淨面之剛性越小。By forming a plurality of cutouts 102 on the cleaning surface of the cleaning parts 120 and 130, the rigidity of the cleaning surface of the cleaning parts 120 and 130 is reduced. FIG. 4 is an enlarged three-dimensional view showing a portion of the cleaning part 120. As shown in FIG. 4, the depth of each cutout 102 is d, and the width of each cutout 102 is w. The area of the upper surface of each cleaning block 103 that becomes the cleaning surface is S. The greater the depth d of the cutout 102, the smaller the rigidity of the cleaning surface of the cleaning parts 120 and 130. In addition, the smaller the area S of the cleaning block 103, the smaller the rigidity of the cleaning surface of the cleaning parts 120 and 130.
藉由減少洗淨部120、130之剛性,而於洗淨面接觸基板之下表面時,藉由於洗淨部120、130產生之載荷,洗淨部120、130彈性變形。藉此,各洗淨區塊103之側面、與相鄰於該洗淨區塊103之洗淨區塊103之側面大致接觸。如此,於本實施形態中,切口102與用於使洗淨液等之液體通過之狹縫、缺口或槽部不同。因此,切口102之寬度w較小。具體而言,切口102之寬度w可為1 mm以下。By reducing the rigidity of the cleaning parts 120 and 130, the cleaning parts 120 and 130 are elastically deformed due to the load generated by the cleaning parts 120 and 130 when the cleaning surface contacts the lower surface of the substrate. As a result, the side surface of each cleaning block 103 is roughly in contact with the side surface of the cleaning block 103 adjacent to the cleaning block 103. In this way, in this embodiment, the incision 102 is different from a slit, a notch or a groove for allowing a liquid such as a cleaning liquid to pass through. Therefore, the width w of the incision 102 is smaller. Specifically, the width w of the incision 102 can be less than 1 mm.
刷基座200係具有與基板洗淨刷100之基台部110同樣之外形之板狀構件。圖5係圖1之刷單元300之縱剖視圖。如圖5所示,於刷基座200之下表面之中央區域形成向上方凹陷之凹部210。又,於刷基座200之下表面之周緣區域形成朝外下方傾斜之傾斜部220。再者,於刷基座200形成複數個螺紋孔201、複數個貫通孔202及複數個貫通孔203。The brush base 200 is a plate-shaped member having the same shape as the base portion 110 of the substrate cleaning brush 100. FIG. 5 is a longitudinal sectional view of the brush unit 300 of FIG. 1. As shown in FIG. 5, a concave portion 210 that is concave upward is formed in the central area of the lower surface of the brush base 200. In addition, an inclined portion 220 that is inclined outward and downward is formed in the peripheral area of the lower surface of the brush base 200. Furthermore, a plurality of threaded holes 201, a plurality of through holes 202, and a plurality of through holes 203 are formed in the brush base 200.
複數個螺紋孔201以分別與基板洗淨刷100之複數個貫通孔111對應之方式設置於刷基座200之上表面。複數個貫通孔202以於上下延伸且分別與基板洗淨刷100之複數個貫通孔112對應之方式配置。複數個貫通孔203以於上下延伸且分別與基板洗淨刷100之複數個貫通孔113對應之方式配置。The plurality of threaded holes 201 are disposed on the upper surface of the brush base 200 in a manner corresponding to the plurality of through holes 111 of the substrate cleaning brush 100. The plurality of through holes 202 are arranged in a manner extending up and down and corresponding to the plurality of through holes 112 of the substrate cleaning brush 100. The plurality of through holes 203 are arranged in a manner extending up and down and corresponding to the plurality of through holes 113 of the substrate cleaning brush 100.
複數個螺紋構件310(圖1)自上方分別插通至基板洗淨刷100之複數個貫通孔111。各螺紋構件310之下端部與刷基座200之對應之螺紋孔201螺合。藉此,基板洗淨刷100與刷基座200連接,完成刷單元300。於刷單元300中,基板洗淨刷100之複數個貫通孔113分別與刷基座200之複數個貫通孔203連通。A plurality of threaded components 310 (FIG. 1) are inserted from above into the plurality of through holes 111 of the substrate cleaning brush 100. The lower end of each threaded component 310 is screwed into the corresponding threaded hole 201 of the brush base 200. In this way, the substrate cleaning brush 100 is connected to the brush base 200 to complete the brush unit 300. In the brush unit 300, the plurality of through holes 113 of the substrate cleaning brush 100 are connected to the plurality of through holes 203 of the brush base 200.
刷單元300安裝於馬達等之旋轉軸400。具體而言,旋轉軸400自下方嵌入至刷基座200之凹部210。於旋轉軸400形成分別與刷基座200之貫通孔202對應之複數個螺紋孔401。複數個螺紋構件320(圖1)自上方分別插通至基板洗淨刷100之複數個貫通孔112。各螺紋構件320之下端部通過刷基座200之對應之貫通孔202,與旋轉軸400之對應之螺紋孔401螺合。The brush unit 300 is mounted on a rotating shaft 400 of a motor or the like. Specifically, the rotating shaft 400 is embedded in the recess 210 of the brush base 200 from below. A plurality of threaded holes 401 corresponding to the through holes 202 of the brush base 200 are formed on the rotating shaft 400. A plurality of threaded components 320 ( FIG. 1 ) are respectively inserted from above into the plurality of through holes 112 of the substrate cleaning brush 100. The lower end of each threaded component 320 passes through the corresponding through hole 202 of the brush base 200 and is screwed into the corresponding threaded hole 401 of the rotating shaft 400.
(2)刷單元之動作 於本例中,刷單元300用於洗淨基板之下表面。以下,將基板之下表面中之中央部分稱為下表面中央區域。將基板之下表面中包圍下表面中央區域之區域稱為下表面外側區域。另,基板之下表面意指朝向下方之基板之面。因此,於基板之電路形成面(正面)朝向下方之情形時,基板之正面為下表面,於與正面相反側之面(背面)朝向下方之情形時,基板之背面為下表面。 (2) Operation of the brush unit In this example, the brush unit 300 is used to clean the lower surface of the substrate. Hereinafter, the central portion of the lower surface of the substrate is referred to as the lower surface central area. The area surrounding the lower surface central area of the lower surface of the substrate is referred to as the lower surface outer area. In addition, the lower surface of the substrate means the surface of the substrate facing downward. Therefore, when the circuit forming surface (front side) of the substrate faces downward, the front side of the substrate is the lower surface, and when the surface opposite to the front side (back side) faces downward, the back side of the substrate is the lower surface.
圖6係用於說明刷單元300之動作之圖。於洗淨基板W之下表面中央區域時,如圖6之上段所示,刷單元300向基板W之下表面中央區域之下方移動。接著,刷單元300之上端部即基板洗淨刷100之洗淨部120、130(圖1)之洗淨面接觸基板W之下表面。隨後,藉由刷單元300繞通過基台部110之中心點101之垂直之軸旋轉,去除附著於基板W之下表面中央區域之污染物。於本例中,於洗淨基板W之下表面中央區域時,基板W不旋轉,但基板W亦可旋轉。FIG6 is a diagram for explaining the operation of the brush unit 300. When cleaning the central area of the lower surface of the substrate W, as shown in the upper portion of FIG6 , the brush unit 300 moves below the central area of the lower surface of the substrate W. Then, the upper end of the brush unit 300, i.e., the cleaning surface of the cleaning portion 120, 130 (FIG. 1) of the substrate cleaning brush 100 contacts the lower surface of the substrate W. Subsequently, the brush unit 300 rotates around an axis vertical to the center point 101 of the base portion 110 to remove contaminants attached to the central area of the lower surface of the substrate W. In this example, when cleaning the central area of the lower surface of the substrate W, the substrate W does not rotate, but the substrate W may also rotate.
於洗淨基板W之下表面外側區域時,如圖6之下段所示,刷單元300向基板W之下表面外側區域之下方移動。此時,刷單元300之一部分亦可較基板W稍向外側突出。接著,刷單元300之上端部即基板洗淨刷100之洗淨部120、130之洗淨面接觸基板W之下表面。隨後,藉由基板W旋轉,去除附著於基板W之下表面外側區域之污染物。於本例中,於洗淨基板W之下表面外側區域時,刷單元300不旋轉,但刷單元300亦可旋轉。When cleaning the outer area of the lower surface of the substrate W, as shown in the lower section of Figure 6, the brush unit 300 moves below the outer area of the lower surface of the substrate W. At this time, a portion of the brush unit 300 may also protrude slightly outward from the substrate W. Then, the upper end of the brush unit 300, i.e., the cleaning surface of the cleaning portion 120, 130 of the substrate cleaning brush 100 contacts the lower surface of the substrate W. Subsequently, the contaminants attached to the outer area of the lower surface of the substrate W are removed by rotating the substrate W. In this example, when cleaning the outer area of the lower surface of the substrate W, the brush unit 300 does not rotate, but the brush unit 300 may also rotate.
此處,基板W並非完全之平板形狀,有時於基板W產生翹曲。又,於洗淨基板W時,有時因來自基板洗淨刷100之載荷,而於基板W暫時產生撓曲等之變形等。即使於此種情形時,如上所述,藉由於洗淨部120、130之洗淨面形成複數個切口102,亦減少洗淨部120、130之剛性。Here, the substrate W is not a completely flat plate, and sometimes warps the substrate W. Also, when cleaning the substrate W, sometimes the substrate W temporarily deforms such as warping due to the load from the substrate cleaning brush 100. Even in this case, as described above, by forming a plurality of cutouts 102 on the cleaning surfaces of the cleaning parts 120 and 130, the rigidity of the cleaning parts 120 and 130 is reduced.
因此,於洗淨面接觸基板W之下表面時,藉由於洗淨部120、130產生之載荷,洗淨部120、130彈性變形。於該情形時,容易追隨基板W之形狀而使洗淨部120、130之洗淨面整體接觸基板W之下表面。又,藉由洗淨部120、130之彈性變形,各洗淨區塊103、與相鄰於該洗淨區塊103之洗淨區塊103相互接觸。藉此,防止於相鄰之洗淨區塊103間產生不與基板W之下表面接觸之部分。其結果,可高效地洗淨基板W之下表面。Therefore, when the cleaning surface contacts the lower surface of the substrate W, the cleaning parts 120 and 130 are elastically deformed by the load generated by the cleaning parts 120 and 130. In this case, it is easy to follow the shape of the substrate W and make the cleaning surfaces of the cleaning parts 120 and 130 contact the lower surface of the substrate W as a whole. In addition, by the elastic deformation of the cleaning parts 120 and 130, each cleaning block 103 contacts the cleaning block 103 adjacent to the cleaning block 103. In this way, it is prevented that a portion that does not contact the lower surface of the substrate W is generated between adjacent cleaning blocks 103. As a result, the lower surface of the substrate W can be efficiently cleaned.
於本例中,基板洗淨刷100之直徑大於基板W之直徑之1/3且小於1/2。於該情形時,藉由刷單元300於基板W之下表面中央區域之下方與下表面外側區域之下方之間移動,可高效地洗淨基板W之下表面整體。因此,無需使基板洗淨刷100過大。另,基板W之直徑例如為300 mm。如圖6中一點鏈線所示,於刷單元300移動至基板W之下表面中央區域之下方時可洗淨之區域、與於刷單元300移動至基板W之下表面外側區域之下方時可洗淨之區域可稍微重複。In this example, the diameter of the substrate cleaning brush 100 is greater than 1/3 and less than 1/2 of the diameter of the substrate W. In this case, by moving the brush unit 300 between below the central area of the lower surface of the substrate W and below the outer area of the lower surface, the entire lower surface of the substrate W can be efficiently cleaned. Therefore, there is no need to make the substrate cleaning brush 100 too large. In addition, the diameter of the substrate W is, for example, 300 mm. As shown by the dot chain in Figure 6, the area that can be cleaned when the brush unit 300 moves to below the central area of the lower surface of the substrate W and the area that can be cleaned when the brush unit 300 moves to below the outer area of the lower surface of the substrate W may overlap slightly.
於洗淨基板W之下表面時,亦可向基板W之下表面供給洗淨液。於該情形時,可更高效地去除附著於基板W之下表面之污染物。供給至基板W之下表面之洗淨液通過圖5之形成於基板洗淨刷100之複數個貫通孔113及形成於刷基座200之複數個貫通孔203而排出至刷基座200之下表面。因此,防止洗淨液滯留於基板洗淨刷100上。When cleaning the lower surface of the substrate W, a cleaning liquid may be supplied to the lower surface of the substrate W. In this case, contaminants attached to the lower surface of the substrate W can be removed more efficiently. The cleaning liquid supplied to the lower surface of the substrate W is discharged to the lower surface of the brush base 200 through the plurality of through holes 113 formed in the substrate cleaning brush 100 and the plurality of through holes 203 formed in the brush base 200 shown in FIG. 5 . Therefore, the cleaning liquid is prevented from being retained on the substrate cleaning brush 100.
又,如圖5所示,於刷基座200之下表面之周緣區域形成朝外下方傾斜之傾斜部220。因此,排出至刷基座200之下表面之洗淨液不被導向刷基座200之內側,而順著傾斜部220導向外側,並自刷基座200排出。藉此,防止洗淨液附著於旋轉軸400或馬達等。As shown in FIG5 , an inclined portion 220 inclined outward and downward is formed in the peripheral area of the lower surface of the brush base 200. Therefore, the cleaning liquid discharged to the lower surface of the brush base 200 is not guided to the inner side of the brush base 200, but is guided to the outer side along the inclined portion 220 and discharged from the brush base 200. In this way, the cleaning liquid is prevented from being attached to the rotating shaft 400 or the motor.
(3)基板洗淨刷之變化例 於本實施形態之基板洗淨刷100中,於圓形狀之基台部110上設置具有於一方向延伸之洗淨面之洗淨部120、與具有圓環形狀之洗淨面之洗淨部130,但實施形態並不限定於此。基板洗淨刷100可具有各種形狀。又,形成於基板洗淨刷100之洗淨面之切口102之圖案亦未特別限定。 (3) Variations of the substrate cleaning brush In the substrate cleaning brush 100 of the present embodiment, a cleaning portion 120 having a cleaning surface extending in one direction and a cleaning portion 130 having a circular cleaning surface are provided on a circular base portion 110, but the embodiment is not limited thereto. The substrate cleaning brush 100 may have various shapes. In addition, the pattern of the cutout 102 formed on the cleaning surface of the substrate cleaning brush 100 is also not particularly limited.
圖7係顯示基板洗淨刷100之變化例之圖。如圖7所示,於第1變化例之基板洗淨刷100中,於基台部110上設置具有於一方向延伸之洗淨面之洗淨部120。於第2變化例之基板洗淨刷100中,於基台部110上設置具有圓環形狀之洗淨面之洗淨部130。於第3變化例之基板洗淨刷100中,於基台部110上設置具有十字形狀之洗淨面之洗淨部140。FIG. 7 is a diagram showing variations of the substrate cleaning brush 100. As shown in FIG. 7, in the substrate cleaning brush 100 of the first variation, a cleaning portion 120 having a cleaning surface extending in one direction is provided on the base portion 110. In the substrate cleaning brush 100 of the second variation, a cleaning portion 130 having a circular cleaning surface is provided on the base portion 110. In the substrate cleaning brush 100 of the third variation, a cleaning portion 140 having a cross-shaped cleaning surface is provided on the base portion 110.
於第4變化例之基板洗淨刷100中,於基台部110上設置具有圓環形狀之洗淨面之洗淨部130、與具有十字形狀之洗淨面之洗淨部140。於第5變化例之基板洗淨刷100中,於基台部110上設置具有徑較大之圓形狀之洗淨面之洗淨部150。於第6變化例之基板洗淨刷100中,於基台部110上設置具有徑較小之圓形狀之洗淨面之洗淨部150。In the substrate cleaning brush 100 of the fourth variation, a cleaning portion 130 having a circular cleaning surface and a cleaning portion 140 having a cross-shaped cleaning surface are provided on the base portion 110. In the substrate cleaning brush 100 of the fifth variation, a cleaning portion 150 having a circular cleaning surface with a larger diameter is provided on the base portion 110. In the substrate cleaning brush 100 of the sixth variation, a cleaning portion 150 having a circular cleaning surface with a smaller diameter is provided on the base portion 110.
於第1~第4變化例中,雖省略切口102之圖示,但亦可於第1~第4變化例之基板洗淨刷100之各者形成各種圖案之切口102。圖8係顯示形成於基板洗淨刷100之洗淨面之切口102之變化例之圖。於圖8之各變化例中,於左欄顯示基板洗淨刷100之俯視圖,於右欄顯示基板洗淨刷100之立體圖。In the first to fourth variations, although the cutouts 102 are omitted, the cutouts 102 of various patterns may be formed in each of the first to fourth variations. FIG8 is a diagram showing variations of the cutouts 102 formed on the cleaning surface of the substrate cleaning brush 100. In each variation of FIG8 , a top view of the substrate cleaning brush 100 is shown in the left column, and a three-dimensional view of the substrate cleaning brush 100 is shown in the right column.
如圖8所示,於第7變化例中,複數個切口102以於縱向及橫向以等間隔延伸之方式形成為格柵狀。於圖8之例中,第7變化例之切口102形成於第5變化例之基板洗淨刷100之洗淨部150之洗淨面。於以下之第8變化例及第9變化例中亦同樣。As shown in FIG8 , in the seventh variation, a plurality of cutouts 102 are formed in a grid shape in a manner extending at equal intervals in the longitudinal and transverse directions. In the example of FIG8 , the cutouts 102 of the seventh variation are formed on the cleaning surface of the cleaning portion 150 of the substrate cleaning brush 100 of the fifth variation. The same is true in the eighth and ninth variations below.
於第8變化例中,複數個切口102以於一方向以等間隔延伸之方式形成。於第9變化例中,複數個切口102以於縱向及橫向以不等間隔延伸之方式形成為格柵狀。於第9變化例中,亦可於欲進一步減少洗淨部150之洗淨面之剛性之區域(例如容易接觸基板W之區域),以小間隔形成切口102。In the eighth variation, the plurality of cutouts 102 are formed in a manner extending at equal intervals in one direction. In the ninth variation, the plurality of cutouts 102 are formed in a grid shape in a manner extending at unequal intervals in the longitudinal and transverse directions. In the ninth variation, the cutouts 102 may be formed at small intervals in a region where the rigidity of the cleaning surface of the cleaning portion 150 is to be further reduced (e.g., a region that is easy to contact the substrate W).
於第10變化例中,複數個切口102形成為以基台部110之中心點101(圖3)為中心放射狀延伸。於圖8之例中,第10變化例之切口102形成於第2變化例之基板洗淨刷100之洗淨部130之洗淨面。In the tenth variation, a plurality of cutouts 102 are formed to extend radially from the center point 101 (FIG. 3) of the base portion 110. In the example of FIG8, the cutouts 102 of the tenth variation are formed on the cleaning surface of the cleaning portion 130 of the substrate cleaning brush 100 of the second variation.
(4)效果 於本實施形態之基板洗淨刷100中,洗淨部120、130之洗淨面藉由切口102劃分為複數個洗淨區塊103。於該情形時,可減少洗淨面之剛性,且各洗淨區塊103可獨立變形。因此,於洗淨面接觸基板W之下表面時,藉由於洗淨部120、130產生之載荷,洗淨部120、130彈性變形。因此,即使於基板W產生翹曲或撓曲等之變形之情形時,於洗淨基板W時,亦容易追隨基板W之形狀而使洗淨面整體接觸基板W之下表面。 (4) Effect In the substrate cleaning brush 100 of the present embodiment, the cleaning surface of the cleaning parts 120 and 130 is divided into a plurality of cleaning blocks 103 by the cutouts 102. In this case, the rigidity of the cleaning surface can be reduced, and each cleaning block 103 can be deformed independently. Therefore, when the cleaning surface contacts the lower surface of the substrate W, the cleaning parts 120 and 130 are elastically deformed by the load generated by the cleaning parts 120 and 130. Therefore, even when the substrate W is deformed such as warping or bending, it is easy to follow the shape of the substrate W when cleaning the substrate W so that the cleaning surface contacts the lower surface of the substrate W as a whole.
又,藉由洗淨部120、130之彈性變形,各洗淨區塊103、與相鄰於該洗淨區塊103之洗淨區塊103相互接觸。因此,防止於相鄰之洗淨區塊103間產生不與基板W之下表面接觸之部分。藉此,可洗淨基板W之下表面而不使污染物殘留於基板W之下表面。其結果,可高效地洗淨基板W之下表面。Furthermore, each cleaning block 103 is in contact with the cleaning block 103 adjacent to the cleaning block 103 by elastic deformation of the cleaning parts 120 and 130. Therefore, it is prevented that a portion not in contact with the lower surface of the substrate W is generated between adjacent cleaning blocks 103. In this way, the lower surface of the substrate W can be cleaned without leaving contaminants on the lower surface of the substrate W. As a result, the lower surface of the substrate W can be cleaned efficiently.
切口102可具有不使基板W之洗淨液通過之寬度。或,切口102之寬度可為1 mm以下。於該等情形時,更確實地防止於相鄰之洗淨區塊103間產生不與基板W接觸之部分。藉此,可更高效地洗淨基板W。The cutout 102 may have a width that does not allow the cleaning solution of the substrate W to pass through. Alternatively, the width of the cutout 102 may be less than 1 mm. In such cases, it is more reliably prevented that a portion that does not contact the substrate W is generated between adjacent cleaning blocks 103. Thus, the substrate W can be cleaned more efficiently.
切口102可於洗淨面形成為格柵狀。或,切口102可於洗淨面形成為放射狀。於該情形時,於洗淨基板W時,可追隨基板W之形狀而使洗淨面之形狀更適當地變形。尤其,於本例中,切口102於沿一方向延伸之洗淨部120之洗淨面形成為格柵狀,於具有圓環形狀之洗淨部130之洗淨面形成為放射狀。於該情形時,於洗淨基板W時,可追隨基板W之形狀而使洗淨部120、130之洗淨面之形狀更適當地變形。The cutout 102 may be formed in a grid shape on the cleaning surface. Alternatively, the cutout 102 may be formed in a radial shape on the cleaning surface. In this case, when cleaning the substrate W, the shape of the cleaning surface may be deformed more appropriately to follow the shape of the substrate W. In particular, in this example, the cutout 102 is formed in a grid shape on the cleaning surface of the cleaning portion 120 extending in one direction, and is formed in a radial shape on the cleaning surface of the cleaning portion 130 having a circular shape. In this case, when cleaning the substrate W, the shape of the cleaning surfaces of the cleaning portions 120 and 130 may be deformed more appropriately to follow the shape of the substrate W.
如此,於本例中,因於洗淨部120、130之洗淨面形成切口102,故可使洗淨部120、130更充分接觸基板W之下表面。又,於洗淨基板W之下表面時,因基板洗淨刷100旋轉,故將可洗淨之區域維持得較大,且減少基板W之下表面與基板洗淨刷100之接觸面積。因此,即使於對基板洗淨刷100施加之載荷較小之情形時,基板W之下表面與基板洗淨刷100之洗淨面仍以充分之載荷接觸。藉此,可更高效地洗淨基板W之下表面。Thus, in this example, since the cleaning surfaces of the cleaning parts 120 and 130 are formed with the cutouts 102, the cleaning parts 120 and 130 can more fully contact the lower surface of the substrate W. Furthermore, when cleaning the lower surface of the substrate W, since the substrate cleaning brush 100 rotates, the cleanable area is maintained larger, and the contact area between the lower surface of the substrate W and the substrate cleaning brush 100 is reduced. Therefore, even when a relatively small load is applied to the substrate cleaning brush 100, the lower surface of the substrate W and the cleaning surface of the substrate cleaning brush 100 are still in contact with a sufficient load. In this way, the lower surface of the substrate W can be cleaned more efficiently.
(5)參考例 對參考例之基板洗淨刷,說明與本實施形態之基板洗淨刷100不同之點。圖9係參考例之基板洗淨刷之俯視圖。如圖9所示,參考例之基板洗淨刷500包含基台部510及洗淨部520、530。 (5) Reference Example The differences between the substrate cleaning brush of the reference example and the substrate cleaning brush 100 of the present embodiment are described. FIG. 9 is a top view of the substrate cleaning brush of the reference example. As shown in FIG. 9 , the substrate cleaning brush 500 of the reference example includes a base portion 510 and cleaning portions 520 and 530.
基台部510具有與圖3之基台部110同樣之構成。因此,對基台部510定義中心點501。又,於基台部510形成複數個貫通孔511、複數個貫通孔512及複數個貫通孔513。貫通孔511具有與圖3之貫通孔111同樣之構成。貫通孔512具有與圖3之貫通孔112同樣之構成。貫通孔513具有與圖3之貫通孔113同樣之構成。The base portion 510 has the same structure as the base portion 110 of FIG3 . Therefore, a center point 501 is defined for the base portion 510. Furthermore, a plurality of through holes 511, a plurality of through holes 512, and a plurality of through holes 513 are formed in the base portion 510. The through hole 511 has the same structure as the through hole 111 of FIG3 . The through hole 512 has the same structure as the through hole 112 of FIG3 . The through hole 513 has the same structure as the through hole 113 of FIG3 .
洗淨部520、530除未形成切口102之點外,具有分別與圖3之洗淨部120、130同樣之構成。另,基板洗淨刷500中洗淨部520之寬度大於洗淨部120之寬度。藉由於圖1之刷基座200安裝基板洗淨刷500,構成刷單元。The cleaning parts 520 and 530 have the same structure as the cleaning parts 120 and 130 of Fig. 3, except that the cutout 102 is not formed. In addition, the width of the cleaning part 520 of the substrate cleaning brush 500 is greater than the width of the cleaning part 120. The substrate cleaning brush 500 is mounted on the brush base 200 of Fig. 1 to form a brush unit.
圖10係顯示利用圖9之基板洗淨刷500之基板W之下表面中央區域之洗淨步驟之模式圖。如圖10所示,於基板洗淨刷500接觸基板W之下表面中央區域之狀態下,包含基板洗淨刷500之刷單元繞通過中心點501之垂直之軸旋轉。於該情形時,與圖3之基板洗淨刷100同樣,去除附著於基板W之下表面中央區域之污染物。FIG10 is a schematic diagram showing a cleaning step of the central area of the lower surface of the substrate W using the substrate cleaning brush 500 of FIG9 . As shown in FIG10 , when the substrate cleaning brush 500 contacts the central area of the lower surface of the substrate W, the brush unit including the substrate cleaning brush 500 rotates around a vertical axis passing through the center point 501. In this case, the contaminants attached to the central area of the lower surface of the substrate W are removed in the same manner as the substrate cleaning brush 100 of FIG3 .
然而,有時於基板W產生翹曲。又,有時因使洗淨部520、530之洗淨面接觸基板W之下表面中央區域,而於基板W產生變形。此處,因未於洗淨部520、530之洗淨面形成切口,故不減少洗淨部120、130之洗淨面之剛性。However, warping may occur in the substrate W. Also, deformation may occur in the substrate W due to the cleaning surfaces of the cleaning parts 520 and 530 contacting the central area of the lower surface of the substrate W. Here, since no cutouts are formed in the cleaning surfaces of the cleaning parts 520 and 530, the rigidity of the cleaning surfaces of the cleaning parts 120 and 130 is not reduced.
於該情形時,如圖10中粗虛線所示,洗淨部520、530之洗淨面之一部分接觸基板W之下表面中央區域,如圖10中較粗之一點鏈線所示,洗淨部520、530之洗淨面自基板W之下表面中央區域離開。因此,無法高效洗淨基板W之下表面中央區域,污染物之一部分殘留於基板W之下表面中央區域。In this case, as shown by the thick dashed line in FIG10 , a portion of the cleaning surface of the cleaning parts 520 and 530 contacts the central area of the lower surface of the substrate W, and as shown by the thicker dotted line in FIG10 , the cleaning surface of the cleaning parts 520 and 530 is separated from the central area of the lower surface of the substrate W. Therefore, the central area of the lower surface of the substrate W cannot be cleaned efficiently, and a portion of the contaminants remain in the central area of the lower surface of the substrate W.
圖11係顯示利用圖9之基板洗淨刷500之基板W之下表面外側區域之洗淨步驟之模式圖。如圖11所示,於基板洗淨刷500接觸基板W之下表面外側區域之狀態下,包含基板洗淨刷500之刷單元繞通過中心點501之垂直之軸旋轉。又,基板W藉由基板保持裝置旋轉。於該情形時,與圖3之基板洗淨刷100同樣,去除附著於基板W之下表面外側區域之污染物。FIG11 is a schematic diagram showing a cleaning step of the outer region of the lower surface of the substrate W using the substrate cleaning brush 500 of FIG9 . As shown in FIG11 , in a state where the substrate cleaning brush 500 contacts the outer region of the lower surface of the substrate W, the brush unit including the substrate cleaning brush 500 rotates around a vertical axis passing through a center point 501. Furthermore, the substrate W rotates by the substrate holding device. In this case, the contaminants attached to the outer region of the lower surface of the substrate W are removed in the same manner as the substrate cleaning brush 100 of FIG3 .
然而,有時於基板W產生翹曲。又,有時因使洗淨部520、530之洗淨面接觸基板W之下表面外側區域,而於基板W產生變形。此處,因未於洗淨部520、530之洗淨面形成切口,故不減少洗淨部120、130之洗淨面之剛性。However, warping may occur in the substrate W. Also, deformation may occur in the substrate W due to the cleaning surfaces of the cleaning parts 520 and 530 contacting the outer region of the lower surface of the substrate W. Here, since no cutouts are formed in the cleaning surfaces of the cleaning parts 520 and 530, the rigidity of the cleaning surfaces of the cleaning parts 120 and 130 is not reduced.
於該情形時,如圖11中粗虛線所示,洗淨部520、530之洗淨面之一部分接觸基板W之下表面外側區域,如圖11中較粗之一點鏈線所示,洗淨部520、530之洗淨面自基板W之下表面外側區域離開。因此,無法高效洗淨基板W之下表面外側區域,污染物之一部分殘留於基板W之下表面外側區域。In this case, as shown by the thick dashed line in FIG11 , a portion of the cleaning surface of the cleaning parts 520 and 530 contacts the outer region of the lower surface of the substrate W, and as shown by the thicker dotted line in FIG11 , the cleaning surface of the cleaning parts 520 and 530 is separated from the outer region of the lower surface of the substrate W. Therefore, the outer region of the lower surface of the substrate W cannot be cleaned efficiently, and a portion of the contaminants remain in the outer region of the lower surface of the substrate W.
(6)實施例及比較例 於以下之實施例1、2及比較例中,評估基板洗淨刷之洗淨面之變形容易度。具體而言,於實施例1中,使用推拉力計,對圖3之基板洗淨刷100之洗淨部120、130之各洗淨面施加規定載荷。又,藉由雷射位移計測定以載荷之施加部分為中心之複數個部分之變形量,並將其等之平均值設為載荷之施加部分之變形量。 (6) Examples and Comparative Examples In the following Examples 1, 2 and Comparative Examples, the deformation ease of the cleaning surface of the substrate cleaning brush was evaluated. Specifically, in Example 1, a push-pull force gauge was used to apply a specified load to each cleaning surface of the cleaning parts 120 and 130 of the substrate cleaning brush 100 in FIG. 3. In addition, the deformation amount of multiple parts centered on the load application part was measured by a laser displacement meter, and the average value thereof was set as the deformation amount of the load application part.
於實施例2中,對與實施例1不同之基板洗淨刷100進行與實施例1同樣之測定。圖12係實施例2之基板洗淨刷100之俯視圖。圖12之實施例2之基板洗淨刷100與圖3之實施例1之基板洗淨刷100之不同為以下點。實施例2中各洗淨區塊103之面積S大於實施例1中各洗淨區塊103之面積S。In Example 2, the same measurement as in Example 1 is performed on a substrate cleaning brush 100 different from that in Example 1. FIG12 is a top view of the substrate cleaning brush 100 of Example 2. The substrate cleaning brush 100 of Example 2 in FIG12 differs from the substrate cleaning brush 100 of Example 1 in FIG3 in the following points. The area S of each cleaning block 103 in Example 2 is larger than the area S of each cleaning block 103 in Example 1.
具體而言,實施例2中複數個切口102之間隔大於實施例1中複數個切口102之間隔。又,實施例2中洗淨部120之寬度大於實施例1中洗淨部120之寬度。再者,於實施例2中,未於洗淨部120形成通過中心點101與洗淨部120延伸之方向平行之切口102。Specifically, the intervals between the plurality of cutouts 102 in Example 2 are greater than the intervals between the plurality of cutouts 102 in Example 1. Also, the width of the cleaning portion 120 in Example 2 is greater than the width of the cleaning portion 120 in Example 1. Furthermore, in Example 2, the cutout 102 passing through the center point 101 and parallel to the direction in which the cleaning portion 120 extends is not formed in the cleaning portion 120.
於比較例中,對圖9之參考例之基板洗淨刷500進行與實施例1同樣之測定。另,比較例中洗淨部520之寬度與實施例2中洗淨部120之寬度相同。In the comparative example, the substrate cleaning brush 500 of the reference example of FIG9 was measured in the same manner as in Example 1. In addition, the width of the cleaning portion 520 in the comparative example is the same as the width of the cleaning portion 120 in Example 2.
圖13係顯示實施例1之洗淨部120、130之洗淨面之變形量之測定結果之圖表。圖14係顯示實施例2之洗淨部120、130之洗淨面之變形量之測定結果之圖表。圖15係顯示比較例之洗淨部520、530之洗淨面之變形量之測定結果之圖表。於圖13~圖15中,橫軸以g重單位顯示施加之載荷,縱軸以mm單位顯示測定之變形量。又,於圖13~圖15中,白底條顯示對洗淨部120或洗淨部520之測定結果,帶陰影圖案之條顯示對洗淨部130或洗淨部530之測定結果。FIG. 13 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning parts 120 and 130 of Example 1. FIG. 14 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning parts 120 and 130 of Example 2. FIG. 15 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning parts 520 and 530 of the comparative example. In FIG. 13 to FIG. 15, the horizontal axis shows the applied load in g weight unit, and the vertical axis shows the measured deformation amount in mm unit. 13 to 15 , the white bars indicate the measurement results of the cleaning section 120 or the cleaning section 520 , and the bars with shaded patterns indicate the measurement results of the cleaning section 130 or the cleaning section 530 .
如圖13所示,於實施例1中,每次施加載荷時之洗淨部120、130之洗淨面之變形量較大。又,如圖14所示,於實施例2中,每次施加載荷時之洗淨部120、130之洗淨面之變形量亦較大。另一方面,如圖15所示,於比較例中,每次施加載荷時之洗淨部520、530之洗淨面之變形量較小。As shown in FIG13, in Example 1, the deformation amount of the cleaning surface of the cleaning parts 120 and 130 is large each time a load is applied. In addition, as shown in FIG14, in Example 2, the deformation amount of the cleaning surface of the cleaning parts 120 and 130 is also large each time a load is applied. On the other hand, as shown in FIG15, in the comparative example, the deformation amount of the cleaning surface of the cleaning parts 520 and 530 is small each time a load is applied.
自實施例1、2與比較例之比較結果,確認藉由於洗淨部120、130之洗淨面形成切口102,減少洗淨部120、130之洗淨面之剛性。又,自實施例1與實施例2之比較結果,確認藉由減小洗淨區塊103之面積S,進一步減少洗淨部120、130之洗淨面之剛性。From the comparison results of Examples 1 and 2 and the comparative example, it is confirmed that the rigidity of the cleaning surface of the cleaning parts 120 and 130 is reduced by forming the cutouts 102 on the cleaning surface of the cleaning parts 120 and 130. In addition, from the comparison results of Examples 1 and 2, it is confirmed that the rigidity of the cleaning surface of the cleaning parts 120 and 130 is further reduced by reducing the area S of the cleaning block 103.
2.第2實施形態 (1)基板洗淨裝置之構成 作為第2實施形態,對包含第1實施形態之基板洗淨刷100之基板洗淨裝置之詳細構成進行說明。圖16係本發明之第2實施形態之基板洗淨裝置之模式性俯視圖。圖17係顯示圖16之基板洗淨裝置1之內部構成之外觀立體圖。於本實施形態之基板洗淨裝置1中,為了明確位置關係而定義相互正交之X方向、Y方向及Z方向。於圖16及圖17以後之指定圖中,適當以箭頭顯示X方向、Y方向及Z方向。X方向及Y方向於水平面內相互正交,Z方向相當於鉛直方向。 2. Second Implementation Form (1) Structure of Substrate Cleaning Device As the second implementation form, the detailed structure of the substrate cleaning device including the substrate cleaning brush 100 of the first implementation form is described. FIG. 16 is a schematic top view of the substrate cleaning device of the second implementation form of the present invention. FIG. 17 is an external perspective view showing the internal structure of the substrate cleaning device 1 of FIG. 16. In the substrate cleaning device 1 of this implementation form, mutually orthogonal X direction, Y direction and Z direction are defined to clarify the positional relationship. In the designated figures after FIG. 16 and FIG. 17, the X direction, Y direction and Z direction are appropriately indicated by arrows. The X direction and the Y direction are mutually orthogonal in the horizontal plane, and the Z direction is equivalent to the vertical direction.
如圖16所示,基板洗淨裝置1具備上側保持裝置10A、10B、下側保持裝置20、台座裝置30、交接裝置40、下表面洗淨裝置50、杯裝置60、上表面洗淨裝置70、端部洗淨裝置80及開閉裝置90。該等構成要件設置於單元殼體2內。於圖17中,以虛線顯示單元殼體2。As shown in FIG16 , the substrate cleaning device 1 includes upper holding devices 10A and 10B, a lower holding device 20, a pedestal device 30, a transfer device 40, a lower surface cleaning device 50, a cup device 60, an upper surface cleaning device 70, an end cleaning device 80, and an opening and closing device 90. These components are arranged in a unit housing 2. In FIG17 , the unit housing 2 is shown in dotted lines.
單元殼體2具有矩形之底面部2a、與自底面部2a之4邊向上方延伸之4個側壁部2b、2c、2d、2e。側壁部2b、2c相互對向,側壁部2d、2e相互對向。於側壁部2b之中央部形成有矩形之開口。該開口為基板W之搬入搬出口2x,於基板W相對於單元殼體2之搬入時及搬出時使用。於圖17中,以粗虛線顯示搬入搬出口2x。於以下之說明中,將Y方向中自單元殼體2之內部通過搬入搬出口2x朝向單元殼體2之外側之方向(自側壁部2c朝向側壁部2b之方向)稱為前方,將其相反之方向(自側壁部2b朝向側壁部2c之方向)稱為後方。The unit housing 2 has a rectangular bottom portion 2a and four sidewall portions 2b, 2c, 2d, and 2e extending upward from the four sides of the bottom portion 2a. The sidewall portions 2b and 2c face each other, and the sidewall portions 2d and 2e face each other. A rectangular opening is formed in the center of the sidewall portion 2b. The opening is a loading and unloading port 2x for substrates W, and is used when the substrates W are loaded into and unloaded from the unit housing 2. In FIG. 17 , the loading and unloading port 2x is shown by a thick dashed line. In the following description, the direction in the Y direction from the inside of the unit housing 2 through the loading and unloading port 2x toward the outside of the unit housing 2 (the direction from the side wall portion 2c toward the side wall portion 2b) is called the front, and the opposite direction (the direction from the side wall portion 2b toward the side wall portion 2c) is called the rear.
於側壁部2b中搬入搬出口2x之形成部分及其附近之區域設置有開閉裝置90。開閉裝置90包含構成為可開閉搬入搬出口2x之擋閘91、與驅動擋閘91之擋閘驅動部92。於圖17中,以較粗之二點鏈線顯示擋閘91。擋閘驅動部92以於基板W相對於基板洗淨裝置1之搬入時及搬出時開放搬入搬出口2x之方式驅動擋閘91。又,擋閘驅動部92以於基板洗淨裝置1中基板W之洗淨處理時閉塞搬入搬出口2x之方式驅動擋閘91。An opening and closing device 90 is provided in the portion of the side wall portion 2b where the loading and unloading port 2x is formed and in the vicinity thereof. The opening and closing device 90 includes a gate 91 configured to open and close the loading and unloading port 2x and a gate driving unit 92 for driving the gate 91. In FIG. 17 , the gate 91 is shown by a thicker two-dot chain line. The gate driving unit 92 drives the gate 91 in such a manner as to open the loading and unloading port 2x when the substrate W is loaded into and unloaded from the substrate cleaning device 1. Furthermore, the gate driving unit 92 drives the gate 91 so as to close the loading/unloading port 2x when the substrate W is being cleaned in the substrate cleaning apparatus 1.
於底面部2a之中央部設置有台座裝置30。台座裝置30包含線性導引件31、可動台座32及台座驅動部33。線性導引件31包含2條導軌,以俯視時自側壁部2b附近沿Y方向延伸至側壁部2c附近之方式設置。可動台座32設置為可於線性導引件31之2條導軌上沿Y方向移動。台座驅動部33例如包含脈衝馬達,於線性導引件31上使可動台座32於Y方向移動。A pedestal device 30 is provided at the center of the bottom surface 2a. The pedestal device 30 includes a linear guide 31, a movable pedestal 32, and a pedestal drive unit 33. The linear guide 31 includes two guide rails, which are provided in a manner extending from the vicinity of the side wall 2b to the vicinity of the side wall 2c along the Y direction when viewed from above. The movable pedestal 32 is provided to be movable along the Y direction on the two guide rails of the linear guide 31. The pedestal drive unit 33 includes, for example, a pulse motor, which moves the movable pedestal 32 in the Y direction on the linear guide 31.
於可動台座32上,下側保持裝置20及下表面洗淨裝置50以於Y方向排列之方式設置。下側保持裝置20包含吸附保持部21及吸附保持驅動部22。吸附保持部21為所謂之自旋夾盤,具有可吸附保持基板W之下表面之圓形之吸附面,構成為可繞於上下方向延伸之軸(Z方向之軸)旋轉。於圖16中,以二點鏈線顯示由下側保持裝置20吸附保持之基板W之外形。On the movable pedestal 32, the lower side holding device 20 and the lower surface cleaning device 50 are arranged in the Y direction. The lower side holding device 20 includes an adsorption holding portion 21 and an adsorption holding driving portion 22. The adsorption holding portion 21 is a so-called spin chuck, which has a circular adsorption surface that can adsorb and hold the lower surface of the substrate W, and is configured to be rotatable around an axis extending in the vertical direction (axis in the Z direction). In FIG. 16, the appearance of the substrate W adsorbed and held by the lower side holding device 20 is shown by a two-point chain.
吸附保持驅動部22包含馬達。吸附保持驅動部22之馬達以旋轉軸朝上方突出之方式設置於可動台座32上。吸附保持部21安裝於吸附保持驅動部22之旋轉軸之上端部。又,於吸附保持驅動部22之旋轉軸,形成有用於在吸附保持部21中吸附保持基板W之吸引路徑。該吸引路徑連接於未圖示之吸氣裝置。吸附保持驅動部22使吸附保持部21繞上述旋轉軸旋轉。The adsorption and holding drive unit 22 includes a motor. The motor of the adsorption and holding drive unit 22 is arranged on the movable pedestal 32 in a manner that the rotating shaft protrudes upward. The adsorption and holding unit 21 is mounted on the upper end of the rotating shaft of the adsorption and holding drive unit 22. In addition, a suction path for adsorbing and holding the substrate W in the adsorption and holding unit 21 is formed on the rotating shaft of the adsorption and holding drive unit 22. The suction path is connected to a suction device not shown in the figure. The adsorption and holding drive unit 22 causes the adsorption and holding unit 21 to rotate around the above-mentioned rotating shaft.
於可動台座32上,於下側保持裝置20附近進而設置有交接裝置40。交接裝置40包含複數個(於本例中為3個)支持銷41、銷連結構件42及銷升降驅動部43。銷連結構件42以於俯視時包圍吸附保持部21之方式形成,連結複數個支持銷41。複數個支持銷41於藉由銷連結構件42相互連結之狀態下,自銷連結構件42向上方延伸一定長度。銷升降驅動部43使銷連結構件42於可動台座32上升降。藉此,複數個支持銷41相對於吸附保持部21相對升降。On the movable pedestal 32, a handover device 40 is further provided near the lower holding device 20. The handover device 40 includes a plurality of (three in this example) support pins 41, a pin connection structure 42, and a pin lifting drive unit 43. The pin connection structure 42 is formed in a manner of surrounding the adsorption holding unit 21 when viewed from above, and connects the plurality of support pins 41. The plurality of support pins 41 extend upward from the pin connection structure 42 to a certain length while being connected to each other by the pin connection structure 42. The pin lifting drive unit 43 causes the pin connection structure 42 to rise and fall on the movable pedestal 32. Thereby, the plurality of support pins 41 are lifted and lowered relative to the adsorption holding unit 21.
下表面洗淨裝置50包含刷單元300、2個液噴嘴52、氣體噴出部53、升降支持部54、移動支持部55、下表面刷旋轉驅動部55a、下表面刷升降驅動部55b及下表面刷移動驅動部55c。移動支持部55設置為可於可動台座32上之一定區域內相對於下側保持裝置20沿Y方向移動。如圖17所示,升降支持部54可升降地設置於移動支持部55上。升降支持部54具有於遠離吸附保持部21之方向(於本例中為後方)上向斜下方傾斜之上表面54u。The lower surface cleaning device 50 includes a brush unit 300, two liquid nozzles 52, a gas ejection portion 53, a lifting support portion 54, a moving support portion 55, a lower surface brush rotation drive portion 55a, a lower surface brush lifting drive portion 55b, and a lower surface brush moving drive portion 55c. The moving support portion 55 is arranged to be movable in a certain area on the movable pedestal 32 relative to the lower side holding device 20 along the Y direction. As shown in FIG. 17 , the lifting support portion 54 is arranged on the moving support portion 55 so as to be liftable. The lifting support portion 54 has an upper surface 54u that is inclined obliquely downward in a direction away from the adsorption holding portion 21 (rearward in this example).
刷單元300包含第1實施形態之基板洗淨刷100與刷基座200。如圖16所示,刷單元300以基板洗淨刷100可繞朝向上方且通過基台部110之中心點101(圖3)於上下方向延伸之軸旋轉之方式,安裝於升降支持部54之上表面54u。基板洗淨刷100之基台部110之面積大於吸附保持部21之吸附面之面積。The brush unit 300 includes the substrate cleaning brush 100 of the first embodiment and the brush base 200. As shown in FIG16, the brush unit 300 is mounted on the upper surface 54u of the lifting support portion 54 in such a manner that the substrate cleaning brush 100 can rotate around an axis extending in the vertical direction and passing through the center point 101 (FIG. 3) of the base portion 110. The area of the base portion 110 of the substrate cleaning brush 100 is larger than the area of the adsorption surface of the adsorption holding portion 21.
2個液噴嘴52之各者以位於刷單元300附近且液體噴出口朝向上方之方式,安裝於升降支持部54之上表面54u上。下表面洗淨液供給部56(圖18)連接於液噴嘴52。下表面洗淨液供給部56向液噴嘴52供給洗淨液。液噴嘴52於利用刷單元300洗淨基板W時,將自下表面洗淨液供給部56供給之洗淨液供給至基板W之下表面。於本實施形態中,作為供給至液噴嘴52之洗淨液,使用純水(去離子水)。另,作為供給至液噴嘴52之洗淨液,亦可代替純水,使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(Tetra-Methyl Ammonium Hydroxide:氫氧化四甲基銨)等。Each of the two liquid nozzles 52 is mounted on the upper surface 54u of the lifting support part 54 in a manner such that it is located near the brush unit 300 and the liquid nozzle is facing upward. The lower surface cleaning liquid supply part 56 (Figure 18) is connected to the liquid nozzle 52. The lower surface cleaning liquid supply part 56 supplies cleaning liquid to the liquid nozzle 52. When the liquid nozzle 52 uses the brush unit 300 to clean the substrate W, the cleaning liquid supplied from the lower surface cleaning liquid supply part 56 is supplied to the lower surface of the substrate W. In this embodiment, pure water (deionized water) is used as the cleaning liquid supplied to the liquid nozzle 52. In addition, as the cleaning liquid supplied to the liquid nozzle 52, carbonated water, ozone water, hydrogen water, electrolytic water, SC1 (a mixed solution of ammonia and hydrogen peroxide), or TMAH (Tetra-Methyl Ammonium Hydroxide) may be used instead of pure water.
氣體噴出部53係具有於一方向延伸之氣體噴出口之狹縫狀之氣體噴射噴嘴。氣體噴出部53以俯視時位於刷單元300與吸附保持部21之間且氣體噴射口朝向上方之方式,安裝於升降支持部54之上表面54u。噴出氣體供給部57(圖18)連接於氣體噴出部53。噴出氣體供給部57向氣體噴出部53供給氣體。於本實施形態中,使用氮氣作為供給至氣體噴出部53之氣體。氣體噴出部53於利用刷單元300洗淨基板W時及後述之乾燥基板W之下表面時,將自噴出氣體供給部57供給之氣體噴射至基板W之下表面。於該情形時,於刷單元300與吸附保持部21之間,形成於X方向延伸之帶狀之氣體簾。作為供給至氣體噴出部53之氣體,亦可代替氮氣而使用氬氣或氦氣等之惰性氣體。The gas ejection portion 53 is a slit-shaped gas ejection nozzle having a gas ejection outlet extending in one direction. The gas ejection portion 53 is mounted on the upper surface 54u of the lifting support portion 54 in a manner such that the gas ejection outlet is directed upward and is located between the brush unit 300 and the adsorption holding portion 21 when viewed from above. The ejection gas supply portion 57 (FIG. 18) is connected to the gas ejection portion 53. The ejection gas supply portion 57 supplies gas to the gas ejection portion 53. In this embodiment, nitrogen is used as the gas supplied to the gas ejection portion 53. The gas ejection unit 53 ejects the gas supplied from the ejection gas supply unit 57 onto the lower surface of the substrate W when the brush unit 300 is used to clean the substrate W and when the lower surface of the substrate W is dried as described later. In this case, a belt-shaped gas curtain extending in the X direction is formed between the brush unit 300 and the adsorption holding unit 21. As the gas supplied to the gas ejection unit 53, an inert gas such as argon or helium may be used instead of nitrogen.
下表面刷旋轉驅動部55a包含具有旋轉軸400(圖5)之馬達,於利用刷單元300洗淨基板W時使刷單元300旋轉。藉此,可將刷單元300可洗淨之區域維持得較大。The lower surface brush rotation driving part 55a includes a motor having a rotation shaft 400 (FIG. 5), and rotates the brush unit 300 when the brush unit 300 is used to clean the substrate W. Thus, the area that can be cleaned by the brush unit 300 can be maintained larger.
下表面刷升降驅動部55b包含步進馬達或氣缸,使升降支持部54相對於移動支持部55升降。下表面刷移動驅動部55c包含馬達,使移動支持部55於可動台座32上沿Y方向移動。此處,可動台座32之下側保持裝置20之位置被固定。因此,於下表面刷移動驅動部55c進行移動支持部55之Y方向之移動時,移動支持部55相對於下側保持裝置20相對移動。於以下之說明中,將於可動台座32上最靠近下側保持裝置20時之下表面洗淨裝置50之位置稱為接近位置,將於可動台座32上距下側保持裝置20最遠時之下表面洗淨裝置50之位置稱為離開位置。The lower surface brush lifting drive unit 55b includes a stepping motor or a cylinder to lift the lifting support unit 54 relative to the moving support unit 55. The lower surface brush moving drive unit 55c includes a motor to move the moving support unit 55 along the Y direction on the movable base 32. Here, the position of the lower side holding device 20 of the movable base 32 is fixed. Therefore, when the lower surface brush moving drive unit 55c moves the moving support unit 55 in the Y direction, the moving support unit 55 moves relative to the lower side holding device 20. In the following description, the position of the lower surface cleaning device 50 on the movable pedestal 32 when it is closest to the lower side holding device 20 is called the approach position, and the position of the lower surface cleaning device 50 on the movable pedestal 32 when it is farthest from the lower side holding device 20 is called the departure position.
於底面部2a之中央部進而設置有杯裝置60。杯裝置60包含杯61及杯驅動部62。杯61以於俯視時包圍下側保持裝置20及台座裝置30之方式且可升降地設置。於圖17中,以虛線顯示杯61。杯驅動部62根據刷單元300洗淨基板W之下表面之哪個部分,而使杯61於下杯位置與上杯位置之間移動。下杯位置為杯61之上端部位於較藉由吸附保持部21吸附保持之基板W更下方之高度位置。又,上杯位置為杯61之上端部位於較吸附保持部21更上方之高度位置。A cup device 60 is further provided in the central portion of the bottom surface portion 2a. The cup device 60 includes a cup 61 and a cup driving portion 62. The cup 61 is provided in a manner that surrounds the lower holding device 20 and the pedestal device 30 when viewed from above and can be raised and lowered. In FIG17 , the cup 61 is shown by a dotted line. The cup driving portion 62 moves the cup 61 between a lower cup position and an upper cup position depending on which portion of the lower surface of the substrate W is cleaned by the brush unit 300. The lower cup position is a height position where the upper end of the cup 61 is located at a lower height than the substrate W adsorbed and held by the adsorption holding portion 21. Furthermore, the upper cup position is a height position where the upper end of the cup 61 is located at a higher height than the adsorption holding portion 21.
於較杯61更上方之高度位置,以於俯視時隔著台座裝置30而對向之方式,設置有一對上側保持裝置10A、10B。上側保持裝置10A包含下夾盤11A、上夾盤12A、下夾盤驅動部13A及上夾盤驅動部14A。上側保持裝置10B包含下夾盤11B、上夾盤12B、下夾盤驅動部13B及上夾盤驅動部14B。A pair of upper holding devices 10A and 10B are provided at a height position higher than the cup 61 so as to face each other across the base device 30 in a top view. The upper holding device 10A includes a lower chuck 11A, an upper chuck 12A, a lower chuck drive 13A, and an upper chuck drive 14A. The upper holding device 10B includes a lower chuck 11B, an upper chuck 12B, a lower chuck drive 13B, and an upper chuck drive 14B.
下夾盤11A、11B於俯視時關於通過吸附保持部21之中心於Y方向(前後方向)延伸之鉛直面對稱配置,設置為可於共通之水平面內於X方向移動。下夾盤11A、11B之各者具有可自基板W之下方支持基板W之下表面周緣部之2個支持片。下夾盤驅動部13A、13B以下夾盤11A、11B相互靠近之方式,或以下夾盤11A、11B相互遠離之方式,使下夾盤11A、11B移動。The lower chucks 11A and 11B are symmetrically arranged with respect to a lead plane extending in the Y direction (front-rear direction) through the center of the adsorption holding portion 21 in a plan view, and are arranged to be movable in the X direction in a common horizontal plane. Each of the lower chucks 11A and 11B has two supporting pieces that can support the peripheral portion of the lower surface of the substrate W from below the substrate W. The lower chuck driving parts 13A and 13B move the lower chucks 11A and 11B in a manner that the lower chucks 11A and 11B approach each other or in a manner that the lower chucks 11A and 11B move away from each other.
上夾盤12A、12B與下夾盤11A、11B同樣,於俯視時關於通過吸附保持部21之中心於Y方向(前後方向)延伸之鉛直面對稱配置,設置為可於共通之水平面內於X方向移動。上夾盤12A、12B之各者具有構成為抵接於基板W之外周端部之2個部分而可保持基板W之外周端部之2個保持片。上夾盤驅動部14A、14B以上夾盤12A、12B相互靠近之方式,或以上夾盤12A、12B相互遠離之方式,使上夾盤12A、12B移動。The upper chucks 12A and 12B are similar to the lower chucks 11A and 11B, and are symmetrically arranged with respect to the lead plane extending in the Y direction (front-rear direction) through the center of the adsorption holding portion 21 when viewed from above, and are arranged to be movable in the X direction in a common horizontal plane. Each of the upper chucks 12A and 12B has two holding pieces that are configured to abut against two portions of the outer peripheral end of the substrate W and can hold the outer peripheral end of the substrate W. The upper chuck driving portions 14A and 14B move the upper chucks 12A and 12B in a manner that the upper chucks 12A and 12B approach each other or in a manner that the upper chucks 12A and 12B move away from each other.
如圖16所示,於杯61之一側,以俯視時位於上側保持裝置10B附近之方式設置有上表面洗淨裝置70。上表面洗淨裝置70包含旋轉支持軸71、臂72、噴霧噴嘴73及上表面洗淨驅動部74。As shown in Fig. 16, an upper surface cleaning device 70 is provided on one side of the cup 61 so as to be located near the upper holding device 10B in a plan view. The upper surface cleaning device 70 includes a rotation support shaft 71, an arm 72, a spray nozzle 73, and an upper surface cleaning drive unit 74.
旋轉支持軸71於底面部2a上,以於上下方向延伸之方式且可升降可旋轉地由上表面洗淨驅動部74支持。如圖17所示,臂72於較上側保持裝置10B更上方之位置,以自旋轉支持軸71之上端部於水平方向延伸之方式設置。於臂72之前端部安裝有噴霧噴嘴73。The rotation support shaft 71 is supported on the bottom surface 2a in a manner extending in the vertical direction and being supported by the upper surface cleaning drive 74 in a manner that it can be raised and lowered and rotatable. As shown in FIG17 , the arm 72 is provided at a position above the upper side holding device 10B in a manner that it extends in the horizontal direction from the upper end of the rotation support shaft 71. A spray nozzle 73 is installed at the front end of the arm 72.
上表面洗淨流體供給部75(圖18)連接於噴霧噴嘴73。上表面洗淨流體供給部75向噴霧噴嘴73供給洗淨液及氣體。於本實施形態中,使用純水作為供給至噴霧噴嘴73之洗淨液,使用氮氣作為供給至噴霧噴嘴73之氣體。噴霧噴嘴73於洗淨基板W之上表面時,將自上表面洗淨流體供給部75供給之洗淨液與氣體混合而產生混合流體,並將產生之混合流體噴射至下方。The upper surface cleaning fluid supply unit 75 (FIG. 18) is connected to the spray nozzle 73. The upper surface cleaning fluid supply unit 75 supplies cleaning liquid and gas to the spray nozzle 73. In the present embodiment, pure water is used as the cleaning liquid supplied to the spray nozzle 73, and nitrogen gas is used as the gas supplied to the spray nozzle 73. When the spray nozzle 73 cleans the upper surface of the substrate W, the cleaning liquid supplied from the upper surface cleaning fluid supply unit 75 is mixed with the gas to generate a mixed fluid, and the generated mixed fluid is sprayed downward.
另,作為供給至噴霧噴嘴73之洗淨液,亦可代替純水,使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(氫氧化四甲基銨)等。又,作為供給至噴霧噴嘴73之氣體,亦可代替氮氣而使用氬氣或氦氣等之惰性氣體。In addition, as a cleaning liquid supplied to the spray nozzle 73, carbonated water, ozone water, hydrogen water, electrolytic ion water, SC1 (a mixed solution of ammonia and hydrogen peroxide), or TMAH (tetramethylammonium hydroxide) may be used instead of pure water. In addition, as a gas supplied to the spray nozzle 73, an inert gas such as argon or helium may be used instead of nitrogen.
上表面洗淨驅動部74包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸71升降,且使旋轉支持軸71旋轉。根據上述構成,可藉由使噴霧噴嘴73於由吸附保持部21吸附保持並旋轉之基板W之上表面上圓弧狀移動,而洗淨基板W之上表面整體。The upper surface cleaning drive unit 74 includes one or more pulse motors and cylinders, etc., which move the rotation support shaft 71 up and down and rotate the rotation support shaft 71. According to the above structure, the entire upper surface of the substrate W can be cleaned by moving the spray nozzle 73 in an arc shape on the upper surface of the substrate W that is sucked and held by the suction holding unit 21 and rotated.
如圖16所示,於杯61之另一側,以俯視時位於上側保持裝置10A附近之方式設置有端部洗淨裝置80。端部洗淨裝置80包含旋轉支持軸81、臂82、斜面刷83及斜面刷驅動部84。As shown in Fig. 16, an end cleaning device 80 is provided on the other side of the cup 61 so as to be located near the upper holding device 10A in a plan view. The end cleaning device 80 includes a rotation support shaft 81, an arm 82, a bevel brush 83, and a bevel brush driving unit 84.
旋轉支持軸81於底面部2a上,以於上下方向延伸之方式且可升降可旋轉地由斜面刷驅動部84支持。如圖17所示,臂82以於較上側保持裝置10A更上方之位置,自旋轉支持軸81之上端部於水平方向延伸之方式設置。於臂82之前端部,以朝下方突出之方式且以可繞上下方向之軸旋轉之方式設置有斜面刷83。The rotation support shaft 81 is supported on the bottom surface 2a in a manner extending in the vertical direction and being supported by the bevel brush driving portion 84 in a manner that can be raised and lowered and rotatable. As shown in FIG. 17 , the arm 82 is provided at a position above the upper side holding device 10A in a manner that extends in the horizontal direction from the upper end of the rotation support shaft 81. A bevel brush 83 is provided at the front end of the arm 82 in a manner that protrudes downward and is rotatable around an axis in the vertical direction.
斜面刷83例如由PVA海綿或分散有研磨粒之PVA海綿形成,上半部具有倒圓錐台形狀且下半部具有圓錐台形狀。根據該斜面刷83,可於外周面之上下方向之中央部分洗淨基板W之外周端部。The bevel brush 83 is formed of, for example, a PVA sponge or a PVA sponge with abrasive particles dispersed therein, and has an inverted pyramidal shape at the upper half and a pyramidal shape at the lower half. The bevel brush 83 can clean the outer peripheral end of the substrate W at the central portion in the up-down direction of the outer peripheral surface.
斜面刷驅動部84包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸81升降,且使旋轉支持軸81旋轉。根據上述構成,藉由使斜面刷83之外周面之中央部分接觸由吸附保持部21吸附保持並旋轉之基板W之外周端部,而可洗淨基板W之外周端部整體。The bevel brush driving unit 84 includes one or more pulse motors and cylinders, etc., which move the rotation support shaft 81 up and down and rotate the rotation support shaft 81. According to the above structure, the outer peripheral end of the substrate W that is sucked and held by the suction holding unit 21 and rotated can be cleaned as a whole by making the central portion of the outer peripheral surface of the bevel brush 83 contact the outer peripheral end of the substrate W that is sucked and held by the suction holding unit 21 and rotated.
此處,斜面刷驅動部84進而包含內置於臂82之馬達。該馬達使設置於臂82之前端部之斜面刷83繞上下方向之軸旋轉。因此,於洗淨基板W之外周端部時,藉由斜面刷83旋轉,提高基板W之外周端部中斜面刷83之洗淨力。Here, the bevel brush driving unit 84 further includes a motor built into the arm 82. The motor rotates the bevel brush 83 provided at the front end of the arm 82 around an axis in the vertical direction. Therefore, when cleaning the outer peripheral end of the substrate W, the bevel brush 83 rotates, thereby increasing the cleaning force of the bevel brush 83 at the outer peripheral end of the substrate W.
圖18係顯示圖16之基板洗淨裝置1之控制系統之構成之方塊圖。圖18之控制部9包含CPU(Central Processing Unit:中央運算處理裝置)、RAM(Random Access Memory:隨機存取記憶體)、ROM(Read Only Memory:唯讀記憶體)及記憶裝置。RAM被用作CPU之作業區域。ROM記憶系統程式。記憶裝置記憶控制程式。CPU藉由於RAM上執行記憶於記憶裝置之基板洗淨程式,而控制基板洗淨裝置1之各部之動作。FIG18 is a block diagram showing the structure of the control system of the substrate cleaning device 1 of FIG16. The control unit 9 of FIG18 includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), and a memory device. The RAM is used as a working area of the CPU. The ROM stores the system program. The memory device stores the control program. The CPU controls the operation of each part of the substrate cleaning device 1 by executing the substrate cleaning program stored in the memory device on the RAM.
如圖18所示,控制部9主要為了接收搬入至基板洗淨裝置1之基板W、並保持在吸附保持部21之上方之位置,而控制下夾盤驅動部13A、13B及上夾盤驅動部14A、14B。又,控制部9主要為了藉由吸附保持部21吸附保持基板W且使吸附保持之基板W旋轉,而控制吸附保持驅動部22。As shown in FIG18 , the control unit 9 mainly controls the lower chuck drive units 13A, 13B and the upper chuck drive units 14A, 14B to receive the substrate W carried into the substrate cleaning device 1 and hold it at a position above the adsorption and holding unit 21. In addition, the control unit 9 mainly controls the adsorption and holding drive unit 22 to adsorb and hold the substrate W by the adsorption and holding unit 21 and rotate the adsorbed and held substrate W.
又,控制部9主要為了使可動台座32相對於藉由上側保持裝置10A、10B保持之基板W移動,而控制台座驅動部33。又,控制部9為了使基板W於藉由上側保持裝置10A、10B保持之基板W之高度位置、與藉由吸附保持部21保持之基板W之高度位置之間移動,而控制銷升降驅動部43。Furthermore, the control unit 9 mainly controls the table drive unit 33 to move the movable table 32 relative to the substrate W held by the upper holding devices 10A and 10B. Furthermore, the control unit 9 controls the pin lifting drive unit 43 to move the substrate W between the height position of the substrate W held by the upper holding devices 10A and 10B and the height position of the substrate W held by the adsorption holding unit 21.
又,控制部9為了洗淨基板W之下表面,而控制下表面刷旋轉驅動部55a、下表面刷升降驅動部55b、下表面刷移動驅動部55c、下表面洗淨液供給部56及噴出氣體供給部57。又,控制部9為了以杯61接住洗淨藉由吸附保持部21吸附保持之基板W時自基板W飛散之洗淨液,而控制杯驅動部62。Furthermore, the control unit 9 controls the lower surface brush rotation driver 55a, the lower surface brush lifting driver 55b, the lower surface brush moving driver 55c, the lower surface cleaning liquid supplier 56, and the ejection gas supplier 57 to clean the lower surface of the substrate W. Furthermore, the control unit 9 controls the cup driver 62 to receive the cleaning liquid scattered from the substrate W when cleaning the substrate W adsorbed and held by the adsorption holding unit 21 with the cup 61.
又,控制部9為了洗淨藉由吸附保持部21吸附保持之基板W之上表面,而控制上表面洗淨驅動部74及上表面洗淨流體供給部75。又,控制部9為了洗淨藉由吸附保持部21吸附保持之基板W之外周端部,而控制斜面刷驅動部84。進而,控制部9為了於基板洗淨裝置1中搬入時及搬出基板W時開閉單元殼體2之搬入搬出口2x,而控制擋閘驅動部92。Furthermore, the control unit 9 controls the upper surface cleaning driving unit 74 and the upper surface cleaning fluid supplying unit 75 to clean the upper surface of the substrate W adsorbed and held by the adsorption holding unit 21. Furthermore, the control unit 9 controls the bevel brush driving unit 84 to clean the outer peripheral end of the substrate W adsorbed and held by the adsorption holding unit 21. Furthermore, the control unit 9 controls the gate driving unit 92 to open and close the loading and unloading port 2x of the unit housing 2 when the substrate W is loaded and unloaded from the substrate cleaning device 1.
(2)基板洗淨裝置之動作 圖19~圖30係用於說明圖16之基板洗淨裝置1之動作之一例之模式圖。於圖19~圖30之各者中,於上段顯示基板洗淨裝置1之俯視圖。又,於中段顯示沿Y方向觀察之下側保持裝置20及其周邊部之側視圖,於下段顯示沿X方向觀察之下側保持裝置20及其周邊部之側視圖。中段之側視圖對應於圖16之A-A線側視圖,下段之側視圖對應於圖16之B-B線側視圖。另,為了容易理解基板洗淨裝置1中各構成要件之形狀及動作狀態,於上段之俯視圖與中段及下段之側視圖之間,一部分構成要件之擴縮率不同。又,於圖19~圖30中,以二點鏈線顯示杯61,且以較粗之一點鏈線顯示基板W之外形。 (2) Operation of substrate cleaning device Figures 19 to 30 are schematic diagrams for explaining an example of the operation of the substrate cleaning device 1 of Figure 16. In each of Figures 19 to 30, a top view of the substrate cleaning device 1 is shown in the upper section. In addition, a side view of the lower side holding device 20 and its peripheral portion observed along the Y direction is shown in the middle section, and a side view of the lower side holding device 20 and its peripheral portion observed along the X direction is shown in the lower section. The side view in the middle section corresponds to the A-A line side view of Figure 16, and the side view in the lower section corresponds to the B-B line side view of Figure 16. In addition, in order to facilitate understanding of the shape and operation state of each component in the substrate cleaning device 1, the expansion rate of some components is different between the top view in the upper section and the side views in the middle section and the lower section. In addition, in Figures 19 to 30, the cup 61 is shown with a two-dot chain line, and the shape of the substrate W is shown with a thicker one-dot chain line.
於向基板洗淨裝置1搬入基板W前之初始狀態下,開閉裝置90之擋閘91閉塞搬入搬出口2x。又,如圖16所示,下夾盤11A、11B以下夾盤11A、11B間之距離充分大於基板W之直徑之狀態維持。又,上夾盤12A、12B亦以上夾盤12A、12B間之距離充分大於基板W之直徑之狀態維持。又,台座裝置30之可動台座32以於俯視時吸附保持部21之中心位於杯61之中心之方式配置。又,下表面洗淨裝置50於可動台座32上配置於接近位置。又,下表面洗淨裝置50之升降支持部54處於刷單元300之上端部位於較吸附保持部21更下方之狀態。又,交接裝置40處於複數個支持銷41位於較吸附保持部21更下方之狀態。再者,於杯裝置60中,杯61位於下杯位置。於以下之說明中,將俯視時之杯61之中心位置稱為平面基準位置rp。又,將於俯視時吸附保持部21之中心位於平面基準位置rp時之底面部2a上之可動台座32之位置稱為第1水平位置。In the initial state before the substrate W is loaded into the substrate cleaning device 1, the shutter 91 of the opening and closing device 90 closes the loading and unloading port 2x. Furthermore, as shown in FIG16 , the lower chucks 11A and 11B are maintained in a state where the distance between the lower chucks 11A and 11B is sufficiently greater than the diameter of the substrate W. Furthermore, the upper chucks 12A and 12B are also maintained in a state where the distance between the upper chucks 12A and 12B is sufficiently greater than the diameter of the substrate W. Furthermore, the movable pedestal 32 of the pedestal device 30 is arranged in such a manner that the center of the adsorption holding portion 21 is located at the center of the cup 61 when viewed from above. Furthermore, the lower surface cleaning device 50 is arranged on the movable pedestal 32 in a close position. In addition, the lifting support portion 54 of the lower surface cleaning device 50 is in a state where the upper end portion of the brush unit 300 is located below the adsorption holding portion 21. In addition, the transfer device 40 is in a state where the plurality of support pins 41 are located below the adsorption holding portion 21. Furthermore, in the cup device 60, the cup 61 is located at the lower cup position. In the following description, the center position of the cup 61 when viewed from above is referred to as the plane reference position rp. In addition, the position of the movable pedestal 32 on the bottom portion 2a when the center of the adsorption holding portion 21 is located at the plane reference position rp when viewed from above is referred to as the first horizontal position.
向基板洗淨裝置1之單元殼體2內搬入基板W。具體而言,於即將搬入基板W前擋閘91開放搬入搬出口2x。隨後,如圖19中粗實線箭頭a1所示,未圖示之基板搬送機器人之手(基板保持部)RH通過搬入搬出口2x將基板W搬入至單元殼體2內之大致中央之位置。此時,由手RH保持之基板W如圖19所示,位於下夾盤11A及上夾盤12A與下夾盤11B及上夾盤12B之間。The substrate W is loaded into the unit housing 2 of the substrate cleaning device 1. Specifically, the gate 91 opens the loading/unloading port 2x just before the substrate W is loaded. Then, as shown by the thick solid arrow a1 in FIG. 19 , the hand (substrate holding part) RH of the substrate transport robot (not shown) loads the substrate W into the substantially central position of the unit housing 2 through the loading/unloading port 2x. At this time, the substrate W held by the hand RH is located between the lower chuck 11A and the upper chuck 12A and the lower chuck 11B and the upper chuck 12B as shown in FIG. 19 .
接著,如圖20中粗實線箭頭a2所示,以下夾盤11A、11B之複數個支持片位於基板W之下表面周緣部之下方之方式,下夾盤11A、11B相互靠近。於該狀態下,手RH下降並自搬入搬出口2x退出。藉此,保持於手RH之基板W之下表面周緣部之複數個部分,藉由下夾盤11A、11B之複數個支持片支持。於手RH退出後,擋閘91閉塞搬入搬出口2x。Next, as shown by the thick solid arrow a2 in FIG. 20 , the lower chucks 11A and 11B are brought closer to each other in such a manner that the plurality of support pieces of the lower chucks 11A and 11B are located below the peripheral portion of the lower surface of the substrate W. In this state, the hand RH descends and exits from the loading/unloading port 2x. Thereby, the plurality of portions of the peripheral portion of the lower surface of the substrate W held by the hand RH are supported by the plurality of support pieces of the lower chucks 11A and 11B. After the hand RH exits, the shutter 91 closes the loading/unloading port 2x.
接著,如圖21中粗實線箭頭a3所示,以上夾盤12A、12B之複數個保持片抵接於基板W之外周端部之方式,上夾盤12A、12B相互靠近。藉由上夾盤12A、12B之複數個保持片抵接於基板W之外周端部之複數個部分,由下夾盤11A、11B支持之基板W進而由上夾盤12A、12B保持。如此,由上側保持裝置10A、10B保持之基板W之中心於俯視時與平面基準位置rp重疊或大致重疊。又,如圖21中粗實線箭頭a4所示,以吸附保持部21自平面基準位置rp偏離指定距離且刷單元300之中心點101(圖3)位於平面基準位置rp之方式,可動台座32自第1水平位置向前方移動。此時,將位於底面部2a上之可動台座32之位置稱為第2水平位置。Next, as shown by the thick solid arrow a3 in FIG. 21 , the upper chucks 12A and 12B approach each other in such a manner that the plurality of holding pieces of the upper chucks 12A and 12B abut against the outer peripheral end of the substrate W. The substrate W supported by the lower chucks 11A and 11B is further held by the upper chucks 12A and 12B by the plurality of holding pieces of the upper chucks 12A and 12B abutting against the plurality of portions of the outer peripheral end of the substrate W. In this way, the center of the substrate W held by the upper holding devices 10A and 10B overlaps or substantially overlaps with the plane reference position rp when viewed from above. Furthermore, as shown by the thick solid arrow a4 in FIG. 21 , the movable pedestal 32 moves forward from the first horizontal position in such a manner that the suction holding portion 21 deviates from the plane reference position rp by a specified distance and the center point 101 ( FIG. 3 ) of the brush unit 300 is located at the plane reference position rp. At this time, the position of the movable pedestal 32 located on the bottom surface 2a is referred to as the second horizontal position.
接著,如圖22中粗實線箭頭a5所示,升降支持部54以刷單元300接觸基板W之下表面中央區域之方式上升。又,如圖22中粗實線箭頭a6所示,刷單元300繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之下表面中央區域之污染物質被刷單元300物理剝離。Next, as shown by the thick solid arrow a5 in FIG. 22 , the lifting support 54 rises in such a way that the brush unit 300 contacts the central area of the lower surface of the substrate W. Furthermore, as shown by the thick solid arrow a6 in FIG. 22 , the brush unit 300 rotates (rotates) around the axis in the vertical direction. Thus, the contaminants attached to the central area of the lower surface of the substrate W are physically peeled off by the brush unit 300.
於圖22之下段,於對白框內顯示刷單元300接觸基板W之下表面之部分之放大側視圖。如該對白框內所示,於刷單元300接觸基板W之狀態下,液噴嘴52及氣體噴出部53被保持於接近基板W之下表面之位置。此時,液噴嘴52如白底箭頭a51所示,於刷單元300附近之位置朝基板W之下表面噴出洗淨液。藉此,藉由自液噴嘴52供給至基板W之下表面之洗淨液被導向刷單元300與基板W之接觸部,而藉由洗淨液沖洗由刷單元300自基板W之下表面除去之污染物質。如此,於下表面洗淨裝置50中,液噴嘴52與刷單元300一起安裝於升降支持部54。藉此,可高效地向刷單元300對基板W下表面之洗淨部分供給洗淨液。因此,減少洗淨液之消耗量,且抑制洗淨液之過度飛散。In the lower section of FIG. 22 , an enlarged side view of the portion where the brush unit 300 contacts the lower surface of the substrate W is shown in the white box. As shown in the white box, when the brush unit 300 contacts the substrate W, the liquid nozzle 52 and the gas ejection portion 53 are maintained at a position close to the lower surface of the substrate W. At this time, the liquid nozzle 52 ejects the cleaning liquid toward the lower surface of the substrate W at a position near the brush unit 300, as indicated by the white arrow a51. Thereby, the cleaning liquid supplied from the liquid nozzle 52 to the lower surface of the substrate W is guided to the contact portion between the brush unit 300 and the substrate W, and the contaminants removed from the lower surface of the substrate W by the brush unit 300 are rinsed by the cleaning liquid. Thus, in the lower surface cleaning device 50, the liquid nozzle 52 is mounted on the lifting support part 54 together with the brush unit 300. Thus, the cleaning liquid can be efficiently supplied to the portion of the lower surface of the substrate W to be cleaned by the brush unit 300. Therefore, the consumption of the cleaning liquid is reduced and excessive scattering of the cleaning liquid is suppressed.
另,洗淨基板W之下表面時之刷單元300之旋轉速度,維持為自液噴嘴52供給至基板W之下表面之洗淨液不向刷單元300之側方飛散之程度之速度。In addition, the rotation speed of the brush unit 300 when cleaning the lower surface of the substrate W is maintained at a speed such that the cleaning liquid supplied from the liquid nozzle 52 to the lower surface of the substrate W does not scatter to the sides of the brush unit 300.
此處,升降支持部54之上表面54u於遠離吸附保持部21之方向上向斜下方傾斜。於該情形時,於包含污染物質之洗淨液自基板W之下表面下落至升降支持部54上時,由上表面54u接住之洗淨液被導向遠離吸附保持部21之方向。Here, the upper surface 54u of the lifting support part 54 is inclined downward in a direction away from the adsorption holding part 21. In this case, when the cleaning liquid containing contaminants falls from the lower surface of the substrate W onto the lifting support part 54, the cleaning liquid received by the upper surface 54u is guided in a direction away from the adsorption holding part 21.
又,於利用刷單元300洗淨基板W之下表面時,氣體噴出部53如圖22之對白框內白底箭頭a52所示,於刷單元300與吸附保持部21之間之位置朝基板W之下表面噴射氣體。於本實施形態中,氣體噴出部53以氣體噴射口於X方向延伸之方式安裝於升降支持部54上。於該情形時,於自氣體噴出部53向基板W之下表面噴射氣體時,於刷單元300與吸附保持部21之間形成於X方向延伸之帶狀之氣體簾。藉此,於利用刷單元300洗淨基板W之下表面時,防止包含污染物質之洗淨液朝向吸附保持部21飛散。因此,於利用刷單元300洗淨基板W之下表面時,防止包含污染物質之洗淨液附著於吸附保持部21,將吸附保持部21之吸附面保持清潔。Furthermore, when the brush unit 300 is used to clean the lower surface of the substrate W, the gas ejection portion 53 ejects gas toward the lower surface of the substrate W at a position between the brush unit 300 and the adsorption holding portion 21, as indicated by the white arrow a52 in the white box of FIG. 22. In this embodiment, the gas ejection portion 53 is mounted on the lifting support portion 54 in such a manner that the gas ejection port extends in the X direction. In this case, when the gas is ejected from the gas ejection portion 53 toward the lower surface of the substrate W, a belt-shaped gas curtain extending in the X direction is formed between the brush unit 300 and the adsorption holding portion 21. Thereby, when the brush unit 300 is used to clean the lower surface of the substrate W, the cleaning liquid containing pollutants is prevented from scattering toward the adsorption holding portion 21. Therefore, when the lower surface of the substrate W is cleaned by the brush unit 300, the cleaning liquid containing pollutants is prevented from adhering to the adsorption holding part 21, and the adsorption surface of the adsorption holding part 21 is kept clean.
另,於圖22之例中,氣體噴出部53如白底箭頭a52所示,自氣體噴出部53朝刷單元300向斜上方噴射氣體,但本發明並不限定於此。氣體噴出部53亦可以自氣體噴出部53沿Z方向朝向基板W之下表面之方式噴射氣體。22, the gas ejection part 53 ejects gas obliquely upward from the gas ejection part 53 toward the brush unit 300 as indicated by the white arrow a52, but the present invention is not limited thereto. The gas ejection part 53 may also eject gas from the gas ejection part 53 toward the lower surface of the substrate W along the Z direction.
接著,於圖22之狀態下,當基板W之下表面中央區域之洗淨完成時,停止刷單元300之旋轉,升降支持部54以刷單元300之上端部自基板W離開指定距離之方式下降。又,停止自液噴嘴52向基板W噴出洗淨液。此時,繼續自氣體噴出部53向基板W噴射氣體。Next, in the state of FIG. 22 , when the cleaning of the central area of the lower surface of the substrate W is completed, the rotation of the brush unit 300 is stopped, and the lifting support portion 54 is lowered in a manner that the upper end of the brush unit 300 is separated from the substrate W by a specified distance. In addition, the cleaning liquid is stopped from being sprayed from the liquid nozzle 52 to the substrate W. At this time, the gas is continued to be sprayed from the gas ejection portion 53 to the substrate W.
隨後,如圖23中粗實線箭頭a7所示,以吸附保持部21位於平面基準位置rp之方式,可動台座32向後方移動。即,可動台座32自第2水平位置移動至第1水平位置。此時,藉由繼續自氣體噴出部53向基板W噴射氣體,基板W之下表面中央區域依次被氣體簾乾燥。Then, as shown by the thick solid arrow a7 in FIG. 23 , the movable pedestal 32 moves backward so that the adsorption holding portion 21 is located at the plane reference position rp. That is, the movable pedestal 32 moves from the second horizontal position to the first horizontal position. At this time, by continuing to spray gas from the gas spraying portion 53 toward the substrate W, the central area of the lower surface of the substrate W is dried by the gas curtain in sequence.
接著,如圖24中粗實線箭頭a8所示,升降支持部54以刷單元300位於較吸附保持部21之吸附面(上端部)更下方之方式下降。又,如圖24中粗實線箭頭a9所示,以上夾盤12A、12B之複數個保持片自基板W之外周端部離開之方式,上夾盤12A、12B相互遠離。此時,基板W成為由下夾盤11A、11B支持之狀態。Next, as shown by the thick solid arrow a8 in FIG. 24 , the lifting support part 54 is lowered in such a manner that the brush unit 300 is located below the adsorption surface (upper end portion) of the adsorption holding part 21. Furthermore, as shown by the thick solid arrow a9 in FIG. 24 , the upper chucks 12A and 12B are separated from each other in such a manner that the plurality of holding pieces of the upper chucks 12A and 12B are separated from the outer peripheral end portion of the substrate W. At this time, the substrate W is supported by the lower chucks 11A and 11B.
隨後,如圖24中粗實線箭頭a10所示,銷連結構件42以複數個支持銷41之上端部位於較下夾盤11A、11B稍上方之方式上升。藉此,由複數個支持銷41接收由下夾盤11A、11B支持之基板W。Then, as shown by the thick solid arrow a10 in Fig. 24, the pin connection member 42 rises in such a way that the upper end of the plurality of support pins 41 is slightly above the lower chucks 11A and 11B. Thus, the plurality of support pins 41 receive the substrate W supported by the lower chucks 11A and 11B.
接著,如圖25中粗實線箭頭a11所示,下夾盤11A、11B相互遠離。此時,下夾盤11A、11B移動至俯視時不與由複數個支持銷41支持之基板W重疊之位置。藉此,上側保持裝置10A、10B均返回至初始狀態。Next, as shown by the thick solid arrow a11 in FIG25 , the lower chucks 11A and 11B move away from each other. At this time, the lower chucks 11A and 11B move to a position where they do not overlap with the substrate W supported by the plurality of support pins 41 when viewed from above. Thus, the upper holding devices 10A and 10B return to their initial state.
接著,如圖26中粗實線箭頭a12所示,銷連結構件42以複數個支持銷41之上端部位於較吸附保持部21更下方之方式下降。藉此,由吸附保持部21接收支持於複數個支持銷41上之基板W。於該狀態下,吸附保持部21吸附保持基板W之下表面中央區域。如此,由下側保持裝置20吸附保持之基板W之中心於俯視時與平面基準位置rp重疊或大致重疊。與銷連結構件42之下降同時或銷連結構件42之下降完成後,如圖26中粗實線箭頭a13所示,杯61自下杯位置上升至上杯位置。Next, as indicated by the thick solid arrow a12 in FIG. 26 , the pin-connecting structure 42 is lowered in such a manner that the upper end portions of the plurality of supporting pins 41 are located below the adsorption holding portion 21. Thereby, the substrate W supported on the plurality of supporting pins 41 is received by the adsorption holding portion 21. In this state, the adsorption holding portion 21 adsorbs and holds the central area of the lower surface of the substrate W. In this way, the center of the substrate W adsorbed and held by the lower holding device 20 overlaps or roughly overlaps with the plane reference position rp when viewed from above. Simultaneously with the descent of the pin-connecting structure 42 or after the descent of the pin-connecting structure 42 is completed, as indicated by the thick solid arrow a13 in FIG. 26 , the cup 61 rises from the lower cup position to the upper cup position.
接著,如圖27中粗實線箭頭a14所示,吸附保持部21繞上下方向之軸(吸附保持驅動部22之旋轉軸之軸心)旋轉。藉此,被吸附保持部21吸附保持之基板W以水平姿勢旋轉。Next, as shown by the thick solid arrow a14 in Fig. 27, the suction holding section 21 rotates around the axis in the vertical direction (the axis of the rotation axis of the suction holding drive section 22). As a result, the substrate W suction-held by the suction holding section 21 rotates in a horizontal posture.
接著,上表面洗淨裝置70之旋轉支持軸71旋轉並下降。藉此,如圖27中粗實線箭頭a15所示,噴霧噴嘴73移動至基板W之上方之位置,以噴霧噴嘴73與基板W之間之距離成為預定之距離之方式下降。於該狀態下,噴霧噴嘴73向基板W之上表面噴射洗淨液與氣體之混合流體。又,旋轉支持軸71旋轉。藉此,如圖27中粗實線箭頭a16所示,噴霧噴嘴73移動至旋轉之基板W之上方之位置。藉由向基板W之上表面整體噴射混合流體,洗淨基板W之上表面整體。Next, the rotation support shaft 71 of the upper surface cleaning device 70 rotates and descends. As a result, as shown by the thick solid arrow a15 in FIG. 27 , the spray nozzle 73 moves to a position above the substrate W, and descends in a manner such that the distance between the spray nozzle 73 and the substrate W becomes a predetermined distance. In this state, the spray nozzle 73 sprays a mixed fluid of a cleaning liquid and a gas onto the upper surface of the substrate W. Furthermore, the rotation support shaft 71 rotates. As a result, as shown by the thick solid arrow a16 in FIG. 27 , the spray nozzle 73 moves to a position above the rotating substrate W. By spraying the mixed fluid onto the entire upper surface of the substrate W, the entire upper surface of the substrate W is cleaned.
又,於利用噴霧噴嘴73洗淨基板W之上表面時,端部洗淨裝置80之旋轉支持軸81亦旋轉並下降。藉此,如圖27中粗實線箭頭a17所示,斜面刷83移動至基板W之外周端部之上方之位置。又,以斜面刷83之外周面之中央部分接觸基板W之外周端部之方式下降。於該狀態下,斜面刷83繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之外周端部之污染物質被斜面刷83物理剝離。自基板W之外周端部剝離之污染物質,由自噴霧噴嘴73噴射至基板W之混合流體之洗淨液沖洗。Furthermore, when the upper surface of the substrate W is cleaned by the spray nozzle 73, the rotating support shaft 81 of the end cleaning device 80 also rotates and descends. As a result, as shown by the thick solid arrow a17 in Figure 27, the bevel brush 83 moves to a position above the outer peripheral end of the substrate W. Furthermore, the bevel brush 83 descends in a manner such that the central portion of the outer peripheral surface contacts the outer peripheral end of the substrate W. In this state, the bevel brush 83 rotates (rotates) around the axis in the up-down direction. As a result, the contaminants attached to the outer peripheral end of the substrate W are physically peeled off by the bevel brush 83. The contaminants peeled off from the outer peripheral end of the substrate W are rinsed by the cleaning liquid of the mixed fluid sprayed onto the substrate W from the spray nozzle 73.
再者,於利用噴霧噴嘴73洗淨基板W之上表面時,升降支持部54以刷單元300接觸基板W之下表面外側區域之方式上升。又,如圖27中粗實線箭頭a18所示,刷單元300亦可繞上下方向之軸旋轉(自轉)。進而,液噴嘴52朝基板W之下表面噴出洗淨液,氣體噴出部53朝基板W之下表面噴射氣體。於該狀態下,進而如圖27中粗實線箭頭a19所示,移動支持部55於可動台座32上,於接近位置與離開位置之間進退動作。藉此,由吸附保持部21吸附保持並旋轉之基板W之下表面外側區域由刷單元300遍及整體地洗淨。Furthermore, when the upper surface of the substrate W is cleaned by the spray nozzle 73, the lifting support part 54 rises in such a manner that the brush unit 300 contacts the outer area of the lower surface of the substrate W. In addition, as shown by the thick solid arrow a18 in FIG. 27 , the brush unit 300 can also rotate (rotate) around an axis in the up-down direction. Then, the liquid nozzle 52 sprays the cleaning liquid toward the lower surface of the substrate W, and the gas ejection part 53 sprays the gas toward the lower surface of the substrate W. In this state, as shown by the thick solid arrow a19 in FIG. 27 , the moving support part 55 moves back and forth between the approach position and the departure position on the movable stage 32. Thereby, the outer area of the lower surface of the substrate W that is held and rotated by the adsorption holding part 21 is cleaned entirely by the brush unit 300.
接著,當基板W之上表面、外周端部及下表面外側區域之洗淨完成時,停止自噴霧噴嘴73向基板W噴射混合流體。又,如圖28中粗實線箭頭a20所示,噴霧噴嘴73移動至杯61之一側之位置(初始狀態之位置)。又,如圖28中粗實線箭頭a21所示,斜面刷83移動至杯61之另一側之位置(初始狀態之位置)。進而,停止刷單元300之旋轉,升降支持部54以刷單元300之上端部自基板W離開指定距離之方式下降。又,停止自液噴嘴52向基板W噴出洗淨液、及自氣體噴出部53向基板W噴射氣體。於該狀態下,藉由吸附保持部21高速旋轉,附著於基板W之洗淨液被甩出,基板W整體乾燥。Next, when the cleaning of the upper surface, the outer peripheral end and the outer area of the lower surface of the substrate W is completed, the spraying of the mixed fluid from the spray nozzle 73 to the substrate W is stopped. Furthermore, as shown by the thick solid arrow a20 in Figure 28, the spray nozzle 73 moves to a position on one side of the cup 61 (the position of the initial state). Furthermore, as shown by the thick solid arrow a21 in Figure 28, the bevel brush 83 moves to a position on the other side of the cup 61 (the position of the initial state). Furthermore, the rotation of the brush unit 300 is stopped, and the lifting support part 54 is lowered in a manner that the upper end of the brush unit 300 is away from the substrate W by a specified distance. Furthermore, the spraying of the cleaning liquid from the liquid nozzle 52 to the substrate W and the spraying of the gas from the gas ejection part 53 to the substrate W are stopped. In this state, the cleaning liquid attached to the substrate W is thrown out by the high-speed rotation of the adsorption holding part 21, and the substrate W is dried as a whole.
接著,如圖29中粗實線箭頭a22所示,杯61自上杯位置下降至下杯位置。又,為了準備將新基板W搬入單元殼體2內,如圖29中粗實線箭頭a23所示,下夾盤11A、11B相互靠近至可支持新基板W之位置。Next, as shown by the thick solid arrow a22 in Figure 29, the cup 61 descends from the upper cup position to the lower cup position. In preparation for moving a new substrate W into the unit housing 2, as shown by the thick solid arrow a23 in Figure 29, the lower chucks 11A and 11B approach each other to a position where they can support the new substrate W.
最後,自基板洗淨裝置1之單元殼體2內搬出基板W。具體而言,於即將搬出基板W前,擋閘91開放搬入搬出口2x。隨後,如圖30中粗實線箭頭a24所示,未圖示之基板搬送機器人之手(基板保持部)RH通過搬入搬出口2x進入單元殼體2內。接著,手部RH接收吸附保持部21上之基板W並自搬入搬出口2x退出。於手RH退出後,擋閘91閉塞搬入搬出口2x。Finally, the substrate W is unloaded from the unit housing 2 of the substrate cleaning device 1. Specifically, before the substrate W is unloaded, the gate 91 opens the loading and unloading port 2x. Subsequently, as shown by the thick solid arrow a24 in FIG. 30 , the hand (substrate holding part) RH of the substrate transport robot (not shown) enters the unit housing 2 through the loading and unloading port 2x. Then, the hand RH receives the substrate W on the adsorption holding part 21 and exits from the loading and unloading port 2x. After the hand RH exits, the gate 91 closes the loading and unloading port 2x.
(3)效果 於本實施形態之基板洗淨裝置1中,由上側保持裝置10A、10B或下側保持裝置20保持之基板W之下表面,由第1形態之基板洗淨刷100洗淨。此處,於洗淨基板W之下表面外側區域時及洗淨下表面中央區域時,基板洗淨刷100分別移動至第1及第2水平位置。於洗淨基板W之下表面外側區域時,基板W旋轉。藉此,可高效地洗淨基板W之下表面整體。 (3) Effect In the substrate cleaning device 1 of the present embodiment, the lower surface of the substrate W held by the upper holding device 10A, 10B or the lower holding device 20 is cleaned by the substrate cleaning brush 100 of the first form. Here, when cleaning the outer area of the lower surface of the substrate W and when cleaning the central area of the lower surface, the substrate cleaning brush 100 moves to the first and second horizontal positions respectively. When cleaning the outer area of the lower surface of the substrate W, the substrate W rotates. Thereby, the entire lower surface of the substrate W can be efficiently cleaned.
3.其他實施形態 (1)於第1實施形態中,基板洗淨刷100為洗淨基板W之下表面之下表面刷,但實施形態並不限定於此。基板洗淨刷100亦可為洗淨基板W之上表面之上表面刷。 3. Other embodiments (1) In the first embodiment, the substrate cleaning brush 100 is a lower surface brush for cleaning the lower surface of the substrate W, but the embodiment is not limited thereto. The substrate cleaning brush 100 may also be an upper surface brush for cleaning the upper surface of the substrate W.
(2)於第1實施形態中,於洗淨部120、130兩者形成切口102,但實施形態並不限定於此。亦可於洗淨部120形成切口102,不於洗淨部130形成切口102。於該情形時,亦可減少洗淨部120之洗淨部之剛性。或,亦可於洗淨部130形成切口102,不於洗淨部120形成切口102。於該情形時,亦可減少洗淨部130之洗淨部之剛性。(2) In the first embodiment, the cutout 102 is formed in both the washing parts 120 and 130, but the embodiment is not limited thereto. The cutout 102 may be formed in the washing part 120, but not in the washing part 130. In this case, the rigidity of the washing part 120 may be reduced. Alternatively, the cutout 102 may be formed in the washing part 130, but not in the washing part 120. In this case, the rigidity of the washing part 130 may be reduced.
(3)於第1實施形態中,於洗淨部120、130、140、150之洗淨面形成複數個切口102,但實施形態並不限定於此。只要洗淨部120、130、140、150之洗淨面被劃分為複數個洗淨區塊103,則亦可於洗淨部120、130、140、150之洗淨面形成1個切口102。(3) In the first embodiment, a plurality of cutouts 102 are formed on the cleaning surfaces of the cleaning sections 120, 130, 140, 150, but the embodiment is not limited thereto. As long as the cleaning surfaces of the cleaning sections 120, 130, 140, 150 are divided into a plurality of cleaning areas 103, a single cutout 102 may be formed on the cleaning surfaces of the cleaning sections 120, 130, 140, 150.
4.技術方案之各構成要件與實施形態之各部之對應關係 以下,雖對技術方案之各構成要件與實施形態之各要件之對應之例進行說明,但本發明並不限定於下述之例。作為技術方案之各構成要件,亦可使用具有技術方案所記載之構成或功能之其他各種要件。 4. Correspondence between the components of the technical solution and the parts of the implementation form Although the following describes the correspondence between the components of the technical solution and the components of the implementation form, the present invention is not limited to the following example. As the components of the technical solution, various other components having the structure or function described in the technical solution can also be used.
於上述實施形態中,基板W為基板之例,基板洗淨刷100為基板洗淨刷之例,切口102為切口之例,洗淨部120、130、140、150為洗淨部之例。洗淨區塊103為洗淨區塊之例,中心點101為中心點之例,基台部110為基台部之例,洗淨部120為第1洗淨部之例,洗淨部130為第2洗淨部之例。上側保持裝置10A、10B或下側保持裝置20為基板保持部之例,基板洗淨裝置1為基板洗淨裝置之例,台座驅動部33為移動裝置之例。In the above-mentioned embodiment, the substrate W is an example of a substrate, the substrate cleaning brush 100 is an example of a substrate cleaning brush, the cutout 102 is an example of a cutout, and the cleaning parts 120, 130, 140, and 150 are examples of cleaning parts. The cleaning block 103 is an example of a cleaning block, the center point 101 is an example of a center point, the base part 110 is an example of a base part, the cleaning part 120 is an example of a first cleaning part, and the cleaning part 130 is an example of a second cleaning part. The upper holding device 10A, 10B or the lower holding device 20 is an example of a substrate holding part, the substrate cleaning device 1 is an example of a substrate cleaning device, and the stage driving part 33 is an example of a moving device.
5.實施形態之總括 (第1項)第1項之基板洗淨刷係用於基板之洗淨者,具備: 洗淨部,其具有可於上述基板之洗淨時與上述基板接觸之洗淨面,且於上述洗淨面形成切口;且 上述洗淨面藉由上述切口劃分為複數個洗淨區塊; 於上述洗淨面與上述基板之接觸時,藉由上述洗淨部之彈性變形,各洗淨區塊、與相鄰於該洗淨區塊之洗淨區塊相互接觸。 5. Summary of Implementation Forms (Item 1) The substrate cleaning brush of Item 1 is used for cleaning a substrate and comprises: A cleaning portion having a cleaning surface that can contact the substrate when the substrate is cleaned, and a cutout is formed on the cleaning surface; and The cleaning surface is divided into a plurality of cleaning blocks by the cutout; When the cleaning surface contacts the substrate, each cleaning block contacts the cleaning block adjacent to the cleaning block by elastic deformation of the cleaning portion.
於該基板洗淨刷中,洗淨部之洗淨面藉由切口劃分為複數個洗淨區塊。於該情形時,可減少洗淨面之剛性,且各洗淨區塊可獨立變形。因此,於洗淨面接觸基板時,藉由於洗淨部產生之載荷,洗淨部彈性變形。因此,即使於基板產生翹曲或撓曲等之變形之情形時,於洗淨基板時,亦容易追隨基板之形狀而使洗淨面整體接觸基板。In the substrate cleaning brush, the cleaning surface of the cleaning part is divided into a plurality of cleaning blocks by cutouts. In this case, the rigidity of the cleaning surface can be reduced, and each cleaning block can be deformed independently. Therefore, when the cleaning surface contacts the substrate, the cleaning part deforms elastically due to the load generated by the cleaning part. Therefore, even when the substrate is deformed such as warping or bending, it is easy to follow the shape of the substrate when cleaning the substrate so that the cleaning surface contacts the substrate as a whole.
又,藉由洗淨部之彈性變形,各洗淨區塊、與相鄰於該洗淨區塊之洗淨區塊相互接觸。因此,防止於相鄰之洗淨區塊間產生不與基板接觸之部分。藉此,可不使污染物殘留於基板地洗淨基板。其結果,可高效地洗淨基板。Furthermore, by elastic deformation of the cleaning section, each cleaning block contacts the cleaning block adjacent to the cleaning block. Therefore, it is prevented that a portion not in contact with the substrate is generated between adjacent cleaning blocks. In this way, the substrate can be cleaned without leaving contaminants on the substrate. As a result, the substrate can be cleaned efficiently.
(第2項)如第1項所記載之基板洗淨刷,其中 上述切口亦可具有不使上述基板之洗淨液通過之寬度。 (Item 2) A substrate cleaning brush as described in Item 1, wherein the cutout may have a width that does not allow the cleaning liquid of the substrate to pass through.
於該情形時,於洗淨基板時,更確實地防止於相鄰之洗淨區塊間產生不與基板接觸之部分。藉此,可更高效地洗淨基板。In this case, when cleaning the substrate, it is more reliably prevented that a portion not in contact with the substrate is generated between adjacent cleaning areas, thereby making it possible to clean the substrate more efficiently.
(第3項)如第1項或第2項所記載之基板洗淨刷,其中 上述切口之寬度亦可為1 mm以下。 (Item 3) A substrate cleaning brush as described in Item 1 or Item 2, wherein the width of the cutout may be less than 1 mm.
於該情形時,於洗淨基板時,更確實地防止於相鄰之洗淨區塊間產生不與基板接觸之部分。藉此,可更高效地洗淨基板。In this case, when cleaning the substrate, it is more reliably prevented that a portion not in contact with the substrate is generated between adjacent cleaning areas, thereby making it possible to clean the substrate more efficiently.
(第4項)如第1項至第3項中任一項所記載之基板洗淨刷,其中 上述切口亦可於上述洗淨面形成為格柵狀。 (Item 4) A substrate cleaning brush as described in any one of Items 1 to 3, wherein the cutout may be formed in a grid shape on the cleaning surface.
於該情形時,於洗淨基板時,可追隨基板之形狀而使洗淨面之形狀更適當地變形。In this case, when cleaning the substrate, the shape of the cleaning surface can be deformed more appropriately following the shape of the substrate.
(第5項)如第1項至第4項中任一項所記載之基板洗淨刷,其中 上述切口亦可於上述洗淨面形成為放射狀。 (Item 5) A substrate cleaning brush as described in any one of Items 1 to 4, wherein the cutouts may be formed radially on the cleaning surface.
於該情形時,於洗淨基板時,可追隨基板之形狀而使洗淨面之形狀更適當地變形。In this case, when cleaning the substrate, the shape of the cleaning surface can be deformed more appropriately following the shape of the substrate.
(第6項)第1項至第3項中任一項所記載之基板洗淨刷進而具備: 基台部,其具有中心點;且 上述洗淨部包含: 第1洗淨部,其自上述基台部突出,且於俯視時通過上述基台部之上述中心點而於一方向延伸;及 第2洗淨部,其自上述基台部突出,具有於上述俯視時以上述基台部之上述中心點為中心之圓環形狀; 上述切口亦可形成於上述第1洗淨部之上述洗淨面、與上述第2洗淨部之上述洗淨面之至少一者。 (Item 6) The substrate cleaning brush described in any one of Items 1 to 3 further comprises: a base portion having a center point; and the cleaning portion includes: a first cleaning portion protruding from the base portion and extending in one direction through the center point of the base portion when viewed from above; and a second cleaning portion protruding from the base portion and having a circular ring shape centered on the center point of the base portion when viewed from above; the cutout may also be formed on at least one of the cleaning surface of the first cleaning portion and the cleaning surface of the second cleaning portion.
於該情形時,因於第1洗淨部之洗淨面、與第2洗淨部之洗淨面之至少一者形成切口,故可使第1洗淨部之洗淨面、與第2洗淨部之洗淨面之至少一者更充分接觸基板。又,於基板洗淨刷旋轉之情形時,將可洗淨之區域維持得較大,且減少基板與基板洗淨刷之接觸面積。因此,即使於對基板洗淨刷施加之載荷較小之情形時,基板與基板洗淨刷之洗淨面亦以充分之載荷接觸。藉此,可更高效地洗淨基板。In this case, since at least one of the cleaning surface of the first cleaning part and the cleaning surface of the second cleaning part forms a cut, the cleaning surface of the first cleaning part and at least one of the cleaning surface of the second cleaning part can be more fully in contact with the substrate. In addition, when the substrate cleaning brush rotates, the area that can be cleaned is maintained larger, and the contact area between the substrate and the substrate cleaning brush is reduced. Therefore, even when the load applied to the substrate cleaning brush is relatively small, the substrate and the cleaning surface of the substrate cleaning brush are in contact with a sufficient load. In this way, the substrate can be cleaned more efficiently.
(第7項)如第6項所記載之基板洗淨刷,其中 上述切口亦可於上述第1洗淨部之上述洗淨面形成為格柵狀。 (Item 7) A substrate cleaning brush as described in Item 6, wherein the cutout may also be formed in a grid shape on the cleaning surface of the first cleaning portion.
於該情形時,於洗淨基板時,可追隨基板之形狀而使第1洗淨部之洗淨面之形狀更適當地變形。In this case, when cleaning the substrate, the shape of the cleaning surface of the first cleaning part can be deformed more appropriately in accordance with the shape of the substrate.
(第8項)如第6項或第7項所記載之基板洗淨刷,其中 上述切口亦可於上述第2洗淨部之上述洗淨面形成為放射狀。 (Item 8) A substrate cleaning brush as described in Item 6 or Item 7, wherein the cutout may be formed radially on the cleaning surface of the second cleaning portion.
於該情形時,於洗淨基板時,可追隨基板之形狀而使第1洗淨部之洗淨面之形狀更適當地變形。In this case, when cleaning the substrate, the shape of the cleaning surface of the first cleaning part can be deformed more appropriately in accordance with the shape of the substrate.
(第9項)第9項之基板洗淨裝置具備: 基板保持部,其保持上述基板;及 第1項至第8項中任一項所記載之基板洗淨刷,其洗淨藉由上述基板保持部保持之上述基板。 (Item 9) The substrate cleaning device of Item 9 comprises: A substrate holding portion that holds the above-mentioned substrate; and A substrate cleaning brush described in any one of Items 1 to 8 that cleans the above-mentioned substrate held by the above-mentioned substrate holding portion.
於該基板洗淨裝置中,由基板保持部保持之基板由上述基板洗淨刷洗淨。藉此,可高效地洗淨基板。In the substrate cleaning device, the substrate held by the substrate holding portion is cleaned by the substrate cleaning brush, thereby efficiently cleaning the substrate.
(第10項)第9項所記載之基板洗淨裝置亦可進而具備: 移動裝置,其使上述基板洗淨刷於可洗淨包圍上述基板之下表面中央區域之下表面外側區域之第1水平位置、與可洗淨上述基板之上述下表面中央區域之第2水平位置之間移動。 (Item 10) The substrate cleaning device described in Item 9 may further include: A moving device that moves the substrate cleaning brush between a first horizontal position that can clean the outer area of the lower surface surrounding the central area of the lower surface of the substrate and a second horizontal position that can clean the central area of the lower surface of the substrate.
於該情形時,可高效地洗淨基板之下表面整體。In this case, the entire lower surface of the substrate can be cleaned efficiently.
(第11項)如第10項所記載之基板洗淨裝置,其中 上述基板保持部亦可至少於利用上述基板洗淨刷洗淨上述基板之上述下表面外側區域時使上述基板旋轉。 (Item 11) A substrate cleaning device as described in Item 10, wherein the substrate holding portion can also rotate the substrate at least when the substrate cleaning brush is used to clean the outer area of the lower surface of the substrate.
於該情形時,可更高效地洗淨基板之下表面外側區域。藉此,可更高效地洗淨基板之下表面整體。In this case, the outer area of the lower surface of the substrate can be cleaned more efficiently. Thereby, the entire lower surface of the substrate can be cleaned more efficiently.
1:基板洗淨裝置 2:單元殼體 2a:底面部 2b, 2c, 2d, 2e:側壁部 2x:搬入搬出口 9:控制部 10A, 10B:上側保持裝置 11A, 11B:下夾盤 12A, 12B:上夾盤 13A, 13B:下夾盤驅動部 14A, 14B:上夾盤驅動部 20:下側保持裝置 21:吸附保持部 22:吸附保持驅動部 30:台座裝置 31:線性導引件 32:可動台座 33:台座驅動部 40:交接裝置 41:支持銷 42:銷連結構件 43:銷升降驅動部 50:下表面洗淨裝置 52:液噴嘴 53:氣體噴出部 54:升降支持部 54u:上表面 55:移動支持部 55a:下表面刷旋轉驅動部 55b:下表面刷升降驅動部 55c:下表面刷移動驅動部 56:下表面洗淨液供給部 57:噴出氣體供給部 60:杯裝置 61:杯 62:杯驅動部 70:上表面洗淨裝置 71:旋轉支持軸 72:臂 73:噴霧噴嘴 74:上表面洗淨驅動部 75:上表面洗淨流體供給部 80:端部洗淨裝置 81:旋轉支持軸 82:臂 83:斜面刷 84:斜面刷驅動部 90:開閉裝置 91:擋閘 92:擋閘驅動部 100:基板洗淨刷 101:中心點 102:切口 103:洗淨區塊 110:基台部 111, 112, 113:貫通孔 120, 130, 140, 150:洗淨部 200:刷基座 201:螺紋孔 202, 203:貫通孔 210:凹部 220:傾斜部 300:刷單元 310:螺紋構件 320:螺紋構件 400:旋轉軸 401:螺紋孔 500:基板洗淨刷 501:中心點 510:基台部 511, 512, 513:貫通孔 520, 530:洗淨部 a1~a24, a51, a52:箭頭 d:深度 RH:手(基板保持部) rp:平面基準位置 S:面積 w:寬度 W:基板 1: Substrate cleaning device 2: Unit housing 2a: Bottom part 2b, 2c, 2d, 2e: Side wall 2x: Loading and unloading port 9: Control unit 10A, 10B: Upper side holding device 11A, 11B: Lower chuck 12A, 12B: Upper chuck 13A, 13B: Lower chuck drive unit 14A, 14B: Upper chuck drive unit 20: Lower side holding device 21: Adsorption holding unit 22: Adsorption holding drive unit 30: Base device 31: Linear guide 32: Movable base 33: Base drive unit 40: Handover device 41: Support pin 42: Pin connection structure 43: Pin lifting drive unit 50: Lower surface cleaning device 52: Liquid nozzle 53: Gas ejection unit 54: Lifting support unit 54u: Upper surface 55: Moving support unit 55a: Lower surface brush rotation drive unit 55b: Lower surface brush lifting drive unit 55c: Lower surface brush moving drive unit 56: Lower surface cleaning liquid supply unit 57: Ejection gas supply unit 60: Cup device 61: Cup 62: Cup drive unit 70: Upper surface cleaning device 71: Rotation support shaft 72: Arm 73: Spray nozzle 74: Upper surface cleaning drive unit 75: Upper surface cleaning fluid supply unit 80: End cleaning device 81: Rotation support shaft 82: Arm 83: Inclined brush 84: Inclined brush drive unit 90: Opening and closing device 91: Shutter 92: Shutter drive unit 100: Substrate cleaning brush 101: Center point 102: Cutout 103: Cleaning area 110: Base unit 111, 112, 113: Through hole 120, 130, 140, 150: Cleaning unit 200: Brush base 201: Threaded hole 202, 203: Through hole 210: Recess 220: Inclined part 300: Brush unit 310: Threaded component 320: Threaded component 400: Rotating shaft 401: Threaded hole 500: Substrate cleaning brush 501: Center point 510: Base part 511, 512, 513: Through hole 520, 530: Cleaning part a1~a24, a51, a52: Arrow d: Depth RH: Hand (substrate holding part) rp: Plane reference position S: Area w: Width W: Substrate
圖1係包含本發明之第1實施形態之基板洗淨刷之刷單元之外觀立體圖。 圖2係圖1之基板洗淨刷之外觀立體圖。 圖3係圖1之基板洗淨刷之俯視圖。 圖4係顯示洗淨部之一部分之放大立體圖。 圖5係圖1之刷單元之縱剖視圖。 圖6係用於說明刷單元之動作之圖。 圖7係顯示基板洗淨刷之變化例之圖。 圖8係顯示形成於基板洗淨刷之洗淨面之切口之變化例之圖。 圖9係參考例之基板洗淨刷之俯視圖。 圖10係顯示利用圖9之基板洗淨刷之基板之下表面中央區域之洗淨步驟之模式圖。 圖11係顯示利用圖9之基板洗淨刷之基板之下表面外側區域之洗淨步驟之模式圖。 圖12係實施例2之基板洗淨刷之俯視圖。 圖13係顯示實施例1之洗淨部之洗淨面之變形量之測定結果之圖表。 圖14係顯示實施例2之洗淨部之洗淨面之變形量之測定結果之圖表。 圖15係顯示比較例之洗淨部之洗淨面之變形量之測定結果之圖表。 圖16係本發明之第2實施形態之基板洗淨裝置之模式性俯視圖。 圖17係顯示圖16之基板洗淨裝置之內部構成之外觀立體圖。 圖18係顯示圖16之基板洗淨裝置之控制系統之構成之方塊圖。 圖19係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖20係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖21係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖22係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖23係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖24係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖25係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖26係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖27係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖28係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖29係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 圖30係用於說明圖16之基板洗淨裝置之動作之一例之模式圖。 FIG. 1 is a perspective view of a brush unit of a substrate cleaning brush including the first embodiment of the present invention. FIG. 2 is a perspective view of the substrate cleaning brush of FIG. 1. FIG. 3 is a top view of the substrate cleaning brush of FIG. 1. FIG. 4 is an enlarged perspective view showing a portion of the cleaning portion. FIG. 5 is a longitudinal sectional view of the brush unit of FIG. 1. FIG. 6 is a view for explaining the operation of the brush unit. FIG. 7 is a view showing a variation of the substrate cleaning brush. FIG. 8 is a view showing a variation of the cutout formed on the cleaning surface of the substrate cleaning brush. FIG. 9 is a top view of the substrate cleaning brush of the reference example. FIG. 10 is a schematic view showing a cleaning step of the central area of the lower surface of the substrate using the substrate cleaning brush of FIG. 9. FIG. 11 is a schematic diagram showing a cleaning step of the outer area of the lower surface of the substrate using the substrate cleaning brush of FIG. 9. FIG. 12 is a top view of the substrate cleaning brush of Example 2. FIG. 13 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning portion of Example 1. FIG. 14 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning portion of Example 2. FIG. 15 is a graph showing the measurement results of the deformation amount of the cleaning surface of the cleaning portion of the comparative example. FIG. 16 is a schematic top view of the substrate cleaning device of the second embodiment of the present invention. FIG. 17 is an external perspective view showing the internal structure of the substrate cleaning device of FIG. 16. FIG. 18 is a block diagram showing the structure of the control system of the substrate cleaning device of FIG. 16. FIG. 19 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 20 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 21 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 22 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 23 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 24 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 25 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 26 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 27 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 28 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 29 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16. FIG. 30 is a schematic diagram for explaining an example of the operation of the substrate cleaning device of FIG. 16.
100:基板洗淨刷 100: Substrate cleaning brush
102:切口 102:Incision
103:洗淨區塊 103: Washing area
110:基台部 110: Base part
111,112,113:貫通孔 111,112,113: Through holes
120,130:洗淨部 120,130: Cleaning Department
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US20020020434A1 (en) * | 2000-07-07 | 2002-02-21 | Mcmullen Daniel T. | Injection molded disposable core featuring recessed pores for substrate treatment member |
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US20220161299A1 (en) * | 2020-11-26 | 2022-05-26 | SCREEN Holdings Co., Ltd. | Lower-surface brush, brush base and substrate cleaning device |
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JP3182979B2 (en) * | 1993-05-24 | 2001-07-03 | セイコーエプソン株式会社 | Anisotropic magnet, manufacturing method and manufacturing apparatus |
JP5583503B2 (en) * | 2010-07-14 | 2014-09-03 | 東京エレクトロン株式会社 | Substrate cleaning apparatus and coating and developing apparatus provided with the same |
JP3182979U (en) * | 2013-02-06 | 2013-04-18 | 義明 白輪地 | Car wash sponge |
JP7202231B2 (en) * | 2019-03-20 | 2023-01-11 | 株式会社Screenホールディングス | Cleaning head, center brush, peripheral brush, substrate cleaning device and substrate cleaning method |
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- 2023-08-18 KR KR1020230108171A patent/KR102761216B1/en active IP Right Grant
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Patent Citations (4)
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US20020020434A1 (en) * | 2000-07-07 | 2002-02-21 | Mcmullen Daniel T. | Injection molded disposable core featuring recessed pores for substrate treatment member |
US20140230170A1 (en) * | 2011-09-26 | 2014-08-21 | Entegris, Inc. | Post-cmp cleaning apparatus and method |
TW201832279A (en) * | 2017-02-20 | 2018-09-01 | 環球晶圓日本股份有限公司 | Scrub cleaning method and scrub cleaning device suppress the generation of liquid pool by backward flow of a cleaning liquid, and the occurrence of secondary contamination |
US20220161299A1 (en) * | 2020-11-26 | 2022-05-26 | SCREEN Holdings Co., Ltd. | Lower-surface brush, brush base and substrate cleaning device |
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TW202420427A (en) | 2024-05-16 |
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