TWI847082B - Vertical hall magnetic device - Google Patents

Abstract

A vertical hall magnetic device is disclosed. Two deep planting layers, which are parallel to each other, are arranged on a semiconductor substrate as a carrier layer for current conduction; and that a plurality of planting layers, which are surrounded by N-well in different deep planting layers, are used to establish those magnetic sensors. Next, a plurality of conductor pads are implemented to connected to the deep planting layers electrically. The proposed magnetic device allows the bias current passed through the conductor pads and the channels to form a vertical current path and to sense the different axial magnetic field. Note that the sensing planes are generated according to the different process depth between the deep planting layers and the surface planting layers. The proposed topology not only improves the sensing sensitivity but also enhances the convenience of circuit integration.

Description

Vertical Hall Magnetic Field Sensor

The present invention relates to a Hall magnetic field sensing element, in particular to a vertical Hall magnetic field sensing element.

In recent years, with the rapid development of semiconductor manufacturing processes, the miniaturization and integration of various electronic components are no longer a dream.

Generally speaking, traditional Hall sensors are based on the principle of Lorentz force. The principle is that when an external current is applied along the horizontal axis, a Hall voltage will be generated between the vertical axes, and the voltage will change with the thickness, cross-sectional area, external current and magnetic field of the Hall sensor. If a smaller magnetic field is to be sensed, it can be achieved by increasing the external current, changing the thickness or changing the carrier concentration. Most of the Hall sensors currently on the market are made of bipolar junction transistor (BJT) technology or magnetic materials. The readout circuit and signal processing circuit cannot be combined, so they need to be manufactured separately and then integrated, which will lead to disadvantages such as increased manufacturing costs and increased product size. On the other hand, since the output signal of the Hall sensor element is usually very small, it requires low input offset voltage and low noise characteristics. Therefore, how to effectively reduce the size and increase the convenience of integrated circuits has become one of the problems that manufacturers are eager to solve.

In summary, it can be seen that the prior art has always had problems with poor sensing sensitivity and inconvenient circuit integration, so it is necessary to propose improved technical means to solve this problem.

First, the present invention discloses a vertical Hall magnetic field sensing element, which is manufactured by a standard complementary metal-oxide-semiconductor (CMOS) process. The element includes: a semiconductor substrate, a plurality of shallow implanted layers and a current blocking layer. Two deep implanted layers parallel to each other are arranged on the semiconductor substrate as a carrier layer for current conduction; the plurality of shallow implanted layers are respectively arranged on the same side of different deep implanted layers, and each shallow implanted layer is respectively surrounded by an N-well region to form a current blocking layer with the deep implanted layers. A plurality of conductive pads electrically connected to each other in the layer, and a channel allowing current to pass through the conductive pads through the middle of the deep implant layer to form a vertical current path, and a magnetic field sensing plane in different axial directions is generated according to the difference in process depth between the deep implant layer and the shallow implant layer; and a current blocking layer covers the deep implant layer with a guard ring structure as a barrier to block the current.

The device disclosed in the present invention is as described above. The difference from the prior art is that the present invention is to set two parallel deep implanted layers on the semiconductor substrate as the carrier layer for current conduction, and to set a plurality of shallow implanted layers surrounded by N-type well regions on different deep implanted layers to form a plurality of conductive pads electrically connected to the deep implanted layers, and to allow the current to pass through the conductive pads through the middle connected channels to form a vertical current path, so as to generate magnetic field sensing planes with different axial directions according to the difference in process depth between the deep implanted layer and the shallow implanted layer.

Through the above-mentioned technical means, the present invention can achieve the technical effect of improving the sensing sensitivity and the convenience of circuit integration.

The following will be used in conjunction with drawings and embodiments to explain the implementation of the present invention in detail, so that the implementation process of how the present invention applies technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly.

Before explaining the vertical Hall magnetic field sensing element disclosed in the present invention, the term "electrical connection" used in the present invention is explained first; in fact, "electrical connection" can be any direct or indirect electrical connection means. For example, if the text describes multiple conductive pads electrically connected to the deep implant layer, it should be interpreted that the deep implant layer can be directly connected to the conductive pad, or the deep implant layer can be indirectly connected to the conductive pad through other components or some connection means. In addition, the same dots or component symbols used in the drawings of the present invention represent the same components, materials or structures.

The vertical Hall magnetic field sensing element of the present invention is further described below with reference to the drawings. Please refer to "Figure 1" first. "Figure 1" is a top view of the vertical Hall magnetic field sensing element of the present invention. The vertical Hall magnetic field sensing element 100 is manufactured using a standard CMOS process and includes: a semiconductor substrate 110, a plurality of shallow implantation layers (121-126) and a current blocking layer 130. Among them, two deep implantation layers (111, 112) parallel to each other are arranged on the semiconductor substrate 110 to serve as carrier layers for current conduction. In actual implementation, the deep implantation layers (111, 112) are T-well implantation layers (drawing layers).

A plurality of shallow implantation layers (121-126) are respectively arranged on the upper surface of the same side of different deep implantation layers (111, 112), and each shallow implantation layer (121-126) is respectively surrounded by an N-type well region (131-136) to form a plurality of conductive pads (141-146) electrically connected to the deep implantation layers (111, 112). Taking the first shallow implantation layer 121 as an example, the N-type well region (131-136) is surrounded by each shallow implantation layer (121-126) to form a plurality of conductive pads (141-146) electrically connected to the deep implantation layers (111, 112). The N-type well region 131 surrounds the conductive pad 141; taking the second shallow implantation layer 122 as an example, the N-type well region 132 surrounds the conductive pad 142, and so on, to form six conductive pads (141-146). Then, the current is allowed to pass through the conductive pads (141-146) through the channels (151, 152) connected in the middle of the deep implantation layer (111, 112) to form a vertical current path, and according to the difference in process depth between the deep implantation layer (111, 112) and the shallow implantation layer (121-126), magnetic field sensing planes with different axial directions are generated to sense magnetic field changes. In actual implementation, the shallow implantation layer (121-126) is an N+ implantation layer, which is used to change the conduction direction of the carrier, increase the resistance and reduce the thickness; the channel (151, 152) is a wire, a conductive wire (such as a metal wire); the length and width of the conductive pad (141-146) can be selected from 15μm to 90μm, for example: 30μm × 30μm is selected as the size of the conductive pad (141-146). In addition, the conductive pads (141-146) may include a first conductive pad (i.e., conductive pad 141), a second conductive pad (i.e., conductive pad 142), a third conductive pad (i.e., conductive pad 143) disposed in one of the deep implantation layers (e.g., deep implantation layer 112), and a conductive pad disposed in another of the deep implantation layers (e.g., deep implantation layer 112). The fourth conductive pad (i.e., conductive pad 144), the fifth conductive pad (i.e., conductive pad 145) and the sixth conductive pad (i.e., conductive pad 146) of the implanted layer 111 are provided, wherein the first conductive pad (i.e., conductive pad 141) is electrically connected to the fourth conductive pad (i.e., conductive pad 144) and serves as a first voltage sensing terminal (V _H1 ), the fifth conductive pad (i.e., conductive pad 145) is the current source input terminal and the second conductive pad (i.e., conductive pad 142) is the current source output terminal, and the third conductive pad (i.e., conductive pad 143) is electrically connected to the sixth conductive pad (i.e., conductive pad 146) as the second voltage sensing terminal (V _H2 ).

The current blocking layer 130 covers the deep implanted layer (111, 112) with a protective ring structure as a barrier to block the current. In actual implementation, the current blocking layer 130 is a P+ protective ring structure. In addition, the vertical Hall magnetic field sensing element 100 may further include a readout circuit and a DC power supply for the vertical Hall magnetic field sensing element 100. The readout circuit amplifies the voltage of the vertical Hall magnetic field sensing element 100 with a differential amplifier.

Next, in order to highlight the difference between the vertical Hall magnetic field sensing element 100 and the planar Hall magnetic field sensing element (including: a cross buried Hall magnetic field sensing element and a double E-type Hall magnetic field sensing element), the following is a description of different embodiments of the planar Hall magnetic field sensing element in conjunction with "Figure 2" to "Figure 3D". First, please refer to "Figure 2", which is a schematic diagram of the cross structure of the cross buried Hall magnetic field sensing element. In actual implementation, due to the higher and more stable impedance in the process, the Hall plane uses a polysilicon layer, and the current source input and output terminals (I _bias +, I _bias -) and the voltage sensing terminals (V _H1 , V _H2 ) can be vertically arranged to form a cross-shaped structure 200 (i.e., polysilicon layer). This cross-shaped structure 200 can use three size specifications, for example, the width is 30μm, 60μm and 90μm, etc. In addition, the angle formed by the vertical arrangement of the current source input and output terminals (I _bias +, I _bias -) and the voltage sensing terminals (V _H1 , V _H2 ) (or called "corner 201") can be extended into three arcs. For example, the first arc is shown in "Figure 2A". FIG. 2A is a schematic diagram of a first embodiment of a cross buried Hall magnetic field sensing element, in which a straight line is drawn from two corners adjacent to the current source input/output terminals (I _bias +, I _bias -) and the voltage sensing terminals (V _H1 , V _H2 ) and retracted to form an arc (hereinafter referred to as circular arc 211 ), and then an arc cross structure 210 is formed in the same manner; the second arc is similar to the first arc, and the only difference is that the two ends of the arc are not at the end points of the corners, but as shown in FIG. 2B . "FIG. 2B" is a schematic diagram of the second embodiment of the cross buried Hall magnetic field sensing element, which draws a straight line at half the length of the side, and then retracts the drawn straight line to form an arc (hereinafter referred to as a semi-arc 221), and similarly, a semi-arc cross structure 220 is formed in this way; the third arc is shown in "FIG. 2C". "FIG. 2C" is a schematic diagram of the third embodiment of the cross buried Hall magnetic field sensing element, which draws a straight line at a quarter of the length of the side, and then similarly retracts the drawn straight line to form an arc 231, and then a curved cross structure 230 as shown in "FIG. 2C" is formed in this way. It should be added that on the basis of the cross, it can also be as shown in "FIG. 2D". "Figure 2D" is a schematic diagram of the fourth embodiment of the cross buried Hall magnetic field sensor element, which draws a straight line at two corners near the current source input and output terminals (I _bias +, I _bias -) and the voltage sensing terminals (V _H1 , V _H2 ), and so on, to generate four straight lines 241 distributed in a diamond shape, and the overall structure becomes an octagonal structure 240.

Next, taking the arc-shaped cross structure 210 as an example, three types of implantation structures can be used: (1) The N-well region covers the P+ implantation layer, and the N-well implantation layer is used as a carrier for current conduction, and the N+ implantation layer is used as a conductive pad connected to the N-well implantation layer. The insulation between components uses the current blocking layer (or isolation layer) of the P+ protection ring as a current blocking object; (2) Use the T-well implantation layer to cover the P+ implantation layer, and use the N+ implantation layer as a conductive pad connected to the N-well implantation layer. The insulation between components is also used as the P+ The current blocking layer of the guard ring structure is used as a current blocking object; (3) the P-well region (P-well) is used to cover the N+ implantation layer, which uses the P-well implantation layer as a current conduction carrier and uses N+ as a current blocking object. Similarly, the semi-arc cross structure 220, the arc cross structure 230 and the octagonal structure 240 can also use the above three implantation structures.

Next, the above different implant structures were measured at a constant voltage of 1.8V. The measurement results are shown in Table 1, where "X" represents the failure of the current conduction carrier, resulting in measurement failure:

Table 1: Comparison of 1.8V constant voltage measurement parameters of cross buried Hall magnetic field sensor element Planting layer_size Voltage sensitivity (SRV) (mV/VT) Linear error (Lin+) (%) Linear error (Lin-) (%) Symmetry error (Sym) (%) NW/P+_30μm 22.31 0.344 -5.896 7.958 NW/P+_60μm 22.43 0.672 -2.238 -1.635 NW/P+_90μm 22.01 0.933 6.494 -1.6 NW/P+_Rhombus 24.38 0.076 0.845 -1.146 NW/P+_semi-arc 19.6 0.151 -0.094 1.005 NW/P+_arc 19.4 2.907 9.159 -2.041 TW/P+_30μm 29.42 0.062 6.545 -0.697 TW/P+_60μm 29.31 -0.377 -0.313 0.959 TW/P+_90μm 29.34 -0.672 7.182 -3.93 PW/N+_30μm X X X X PW/N+_60μm X X X X PW/N+_90μm X X X X

From Table 1, we can see that the implantation structure using the T-well implantation layer as the current conduction carrier has a better performance in voltage sensitivity. In the comparison of the three curvature structures, the voltage sensitivity of the diamond design is significantly better than that of the other curvatures. In the same layout value structure, when compared with the circular arc of the same size of NW/P+_60μm, the diamond design also performs better.

Next, Table 2 is the measurement and analysis using the 0.1mA constant current method, including individual measurements of three sizes using the current conduction carrier N-well implantation layer covering the P+ layer as a barrier, and the measurement results of three sizes using the current conduction carrier layer T-well implantation layer covering the P+ layer as a barrier. Among them, "X" represents the failure of the current conduction carrier, resulting in measurement failure:

Table 2: Comparison of constant current measurement parameters of cross buried Hall magnetic field sensing element Planting layer_size Current sensitivity (SRI) (V/AT) NW/P+_30μm 18.667 NW/P+_60μm 18.308 NW/P+_90μm 18.65 NW/P+_Rhombus 16.525 NW/P+_semi-arc 19.783 NW/P+_arc 19.7 TW/P+_30μm 86.883 TW/P+_60μm 84.208 TW/P+_90μm 84.975 PW/N+_30μm X PW/N+_60μm X PW/N+_90μm X

From Table 2, it can be clearly seen that the current sensitivity of the implant structure using the T-well implant layer as the current conduction carrier is significantly better than that of other implant layers. In the comparison of the three arc structures, the results are different from the constant voltage measurement. The arc and semi-arc have similar effects, and the current sensitivity of both is higher than that of the diamond. The result is also better than the NW/P+_60μm arc of the same size under the same layout structure.

Please refer to "FIG. 3A", which is a schematic diagram of the first embodiment of the dual E-type Hall magnetic field sensing element. In addition to the aforementioned cross-shaped structure, the planar Hall magnetic field sensing element can also use the double E-shaped structure 300 as shown in "Figure 3A". Based on the comparison of the constant voltage and constant current measurement parameters of the cross buried Hall magnetic field sensing element at different side lengths and corner arcs, the voltage and current sensitivity of both are best when using the 30μm size structure design. Therefore, the double E-shaped Hall magnetic field sensing element can also use 30μm as the standard size of the conductor pad width and current path length, and design the Hall magnetic field sensing element into a square layout structure, in which each conductor pad includes an N+ implantation layer 303 and an N-well The implantation layer 304 is formed, and the bottom layer 301 is covered with a current blocking layer 305. Next, in the corner curvature design, the current path corner of the bottom layer 301 (T-well) is changed from a right angle to an arc angle to reduce the probability of carrier deflection and collision with the implantation layer when the current is affected by the magnetic field. For example, the corner R angle is designed with a radius of 1.8μm. The corner is drawn in an arc, which has been proven in the physical measurement of the cross buried layer structure mentioned above to be helpful for the carrier flow when the current is deflected. In fact, it is also possible to use a double E-type structure 310 as shown in "FIG. 3B", which is a schematic diagram of the second embodiment of the double E-type Hall magnetic field sensing element, in which the conductor pad width and side length are changed, for example, modified to 15μm, or even a double E-type structure 320 as shown in "FIG. 3C", which is a schematic diagram of the third embodiment of the double E-type Hall magnetic field sensing element, in which the conductor pad width is maintained at 30μm, the side length of 30μm is cancelled, and only the corner R angle of 1.8μm is left, or a double E-type structure 330 as shown in "FIG. 3D", which is a schematic diagram of the fourth embodiment of the double E-type Hall magnetic field sensing element, in which the conductor pad width is reduced to 15μm, the side length is eliminated and only the corner R angle is 1.8μm. In actual implementation, the implantation layer structure of the dual E-type Hall magnetic field sensing element adopts a deeper T-well implantation layer as the main current conduction carrier layer, and uses N+ and N-well implantation layers as conductive pads, and then uses the P+ implantation layer to set the outer ring protection ring to realize the current blocking layer to block the current. It is designed based on the magnetoresistance effect (Magnetoresistance, MR) and is a new type of one-dimensional dual E-type Hall magnetic field sensing element in the vertical direction of the Z axis.

The vertical Hall magnetic field sensing element of the present invention is based on the improvement of the above-mentioned double E-type Hall magnetic field sensing element. It also uses a deeper T-well (i.e., a deep implantation layer) as a current conduction carrier layer. The size of the conductor pad can be 30μm × 30μm. However, this structure design is not implemented by a planar current deflection method. Instead, it uses the implantation layer depth difference of the current direct-down structure to establish a conductor pad connected to the T-well from N+ and N-well. The current is directly injected into the deep T-well and turns straight up through the T-well channel connected in the middle, thereby establishing a vertical current path model. Next, the specifications of the vertical Hall magnetic field sensor of the present invention and the double E-shaped structure (300-330) shown in "Figure 3A" to "Figure 3D" are listed in the following Table 3:

Table 3: Specifications of Hall Field Sensor Components Correspondence Schema Code Pad size and side length (μm) Sensor area (μm ² ) 「Image 1」 V30_30 30/30 159.72 × 116.88 Figure 3A F30_31.8 30/30+1.8 158.84 × 158.84 "Figure 3C" F30_1.8 30/0+1.8 158.84 × 98.84 Figure 3B F15_16.8 15/15+1.8 79.68 × 98.16 "3D Picture" F15_1.8 15/0+1.8 79.68 × 67.6

Next, we mainly use constant voltage measurement to measure the vertical Hall effect magnetic field sensor in the X-axis direction and the planar Hall effect magnetic field sensor in the Z-axis direction through the micro magnetic field measurement system. The measured magnetic field range is between -3.03 and +3.03 Gauss (Gs), and the sensitivity and linear error of each structure of the magnetic field sensor are evaluated. The following are the measurement parameters using 1.8V and 3.3V constant voltages respectively:

Table 4: Measurement parameters of vertical structure Architecture Voltage Voltage sensitivity (SRV) (V/VT) Current sensitivity (SRI) (V/AT) Linear error (Lin+) (%) Linear error (Lin-) (%) Symmetry error (Sym) (%) Vertical 1.8V 71.47 107.49 3.453 -0.193 2.848 Vertical 3.3V 35.96 52.79 3.345 0.025 3.281

Next, in the constant voltage measurement of the planar Hall magnetic field sensor, based on the measurement results of the magnetic field change in the Z-axis direction perpendicular to the chip-mounting semiconductor substrate using 1.8V and 3.3V constant voltages, the constant voltage measurement parameters of the two are shown in Table 5 and Table 6 respectively:

Table 5: 1.8V constant voltage measurement parameter comparison Magnetic field sensor element code Voltage sensitivity (S _RV ) (V/VT) Current sensitivity (S _RI ) (V/AT) Linear error (Lin+) (%) Symmetry error (Sym) (%) V30_30 71.47 107.49 3.453/-0.193 2.848 F30_31.8 170.8 1459.58 3.009/1.338 1.998 F30_1.8 129.11 535.09 1.733/1.374 -0.294 F15_16.8 152.11 1290.62 1.742/1.377 -0.345 F15_1.8 109.6 412.52 1.998/1.398 -0.47 F15_1.8P 58.33 109.49 1618/1.487 -0.192

Table 6: 3.3V constant voltage measurement parameter comparison Magnetic field sensor element code Voltage sensitivity (S _RV ) (V/VT) Current sensitivity (S _RI ) (V/AT) Linear error (Lin+) (%) Symmetry error (Sym) (%) V30_30 35.96 52.79 3.345/0.025 3.281 F30_31.8 93.38 786.5 1.793/1.364 -0.353 F30_1.8 69.92 281.79 1.759/1.358 -0.27 F15_16.8 82.69 685.03 1.752/1.366 -0.354 F15_1.8 61.5 241.4 1743/1.395 -0.228 F15_1.8P 28.3 55.7 -4.033/2.944 -2.747

Tables 5 and 6 above are comparisons of the measurement parameters at 1.8V and 3.3V. Among the five planar structures ("F15_1.8P" is a parallel "F15_1.8" structure), the current sensitivity of the magnetic field sensing element code "F30_31.8" and "F15_16.8" is the best, and the "F15_16.8" occupies the smallest area, and the linear error and symmetry error are more prominent. Another comparison is made based on the difference in working voltage. Increasing the voltage from 1.8V to 3.3V not only does not improve the voltage sensitivity and current sensitivity, but even causes a significant decrease in sensitivity. Although the voltage sensitivity and current sensitivity of the vertical Hall magnetic field sensor of the present invention are not the best, both still reach the target of 100 mV/mT, and the linear error in the negative magnetic field direction is excellent.

In summary, the difference between the present invention and the prior art is that two parallel deep implanted layers are arranged on the semiconductor substrate as carrier layers for current conduction, and a plurality of shallow implanted layers surrounded by N-type well regions are arranged on different deep implanted layers to form a plurality of conductive pads electrically connected to the deep implanted layers, and to allow The current passes through the conductive pads through the middle connected channels to form a vertical current path, so as to generate magnetic field sensing planes in different axial directions according to the difference in process depth between the deep implantation layer and the shallow implantation layer. This technical means can solve the problems existing in the previous technology, thereby achieving the technical effect of improving the sensing sensitivity and the convenience of circuit integration.

Although the present invention is disclosed as above by the aforementioned embodiments, they are not used to limit the present invention. Anyone skilled in similar techniques can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of patent protection of the present invention shall be subject to the scope of the patent application attached to this specification.

100: vertical Hall magnetic field sensor 110: semiconductor substrate 111,112: deep implant layer 121~126: shallow implant layer 130: current blocking layer 131~136: N-type well area 141~146: conductor pad 151,152: channel 200: cross structure 201: corner 210: arc cross structure 211: arc shape 220: semi-arc cross structure 221: semi-arc shape 230: arc cross structure 231: arc shape 240: octagonal structure 241: diamond straight line 300,310,320,330: Double E-type structure 301: Bottom layer 303: N+ implant layer 304: N-well implant layer 305: Current blocking layer

Figure 1 is a top view of the vertical Hall magnetic field sensing element of the present invention. Figure 2 is a schematic diagram of the cross structure of the cross-buried Hall magnetic field sensing element. Figure 2A is a schematic diagram of the first embodiment of the cross-buried Hall magnetic field sensing element. Figure 2B is a schematic diagram of the second embodiment of the cross-buried Hall magnetic field sensing element. Figure 2C is a schematic diagram of the third embodiment of the cross-buried Hall magnetic field sensing element. Figure 2D is a schematic diagram of the fourth embodiment of the cross-buried Hall magnetic field sensing element. Figure 3A is a schematic diagram of the first embodiment of the double E-type Hall magnetic field sensing element. Figure 3B is a schematic diagram of the second embodiment of the double E-type Hall magnetic field sensing element. Figure 3C is a schematic diagram of the third embodiment of the double E-type Hall magnetic field sensing element. FIG. 3D is a schematic diagram of a fourth embodiment of a dual E-type Hall magnetic field sensing element.

100: Vertical Hall magnetic field sensing element

110:Semiconductor substrate

111,112: Deep implantation layer

121~126: Shallow planting layer

130: Current blocking layer

131~136: N-type well area

141~146: Conductor pads

151,152: Channel

Claims (8)

A vertical Hall magnetic field sensing element is manufactured using a standard CMOS process. The element comprises: a semiconductor substrate on which two parallel deep implanted layers are arranged as carrier layers for current conduction; a plurality of shallow implanted layers, the shallow implanted layers are arranged on the same side of different deep implanted layers, and each of the shallow implanted layers is respectively provided with an N-type well region (N-well region). ll) surrounds to form a plurality of conductive pads electrically connected to the deep implant layer, and allows the current to pass through the conductive pads through the connected channels in the middle of the deep implant layer to form a vertical current path, and generates magnetic field sensing planes in different axial directions according to the difference in process depth between the deep implant layer and the shallow implant layer; and a current blocking layer, which covers the deep implant layer with a guard ring structure as a barrier to block the current. As in claim 1, the vertical Hall magnetic field sensing element further comprises a readout circuit and a DC power supply for the vertical Hall magnetic field sensing element, and the readout circuit amplifies the voltage of the vertical Hall magnetic field sensing element with a differential amplifier. As in claim 1, the vertical Hall magnetic field sensing element, wherein the deep implantation layer is a T-well implantation layer, and the T-well implantation layer is used as an implantation structure of a current conduction carrier. As in claim 1, the vertical Hall magnetic field sensing element, wherein the shallow implantation layer is used to change the conduction direction of the carrier, increase the resistance value and reduce the thickness. As in claim 1, the vertical Hall magnetic field sensing element, wherein the shallow implantation layer is an N+ implantation layer. As in claim 1, the vertical Hall magnetic field sensing element, wherein the length and width of the conductive pad are selected from 15 μm to 90 μm respectively. As in claim 1, the vertical Hall magnetic field sensing element, wherein the conductive pads include a first conductive pad, a second conductive pad, a third conductive pad disposed in one of the deep implanted layers, and a fourth conductive pad, a fifth conductive pad, and a sixth conductive pad disposed in another of the deep implanted layers, wherein the first conductive pad is electrically connected to the fourth conductive pad and serves as a first voltage sensing end, the second conductive pad and the fifth conductive pad are current source input/output ends, and the third conductive pad is electrically connected to the sixth conductive pad and serves as a second voltage sensing end. As in claim 1, the vertical Hall magnetic field sensing element, wherein the current blocking layer is a P+ guard ring structure.

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