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TWI845570B - 用於工件處理腔室之組成零件的多層塗膜 - Google Patents

用於工件處理腔室之組成零件的多層塗膜 Download PDF

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TWI845570B
TWI845570B TW108144850A TW108144850A TWI845570B TW I845570 B TWI845570 B TW I845570B TW 108144850 A TW108144850 A TW 108144850A TW 108144850 A TW108144850 A TW 108144850A TW I845570 B TWI845570 B TW I845570B
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processing
workpiece
tool
processing tool
layer
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TW202039920A (zh
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保羅 孔科拉
拉密許 謙德拉瑟哈蘭
安德魯 Ｈ 布賴寧格
湯尼 沙琳 高斯豪
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美商蘭姆研究公司
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Abstract

一種處理工具，其包含用以處理工件之處理腔室，該處理腔室包含塗覆一多層保護膜的至少一組成零件，該多層保護膜包含(a)形成於該至少一組成零件上之一鋁層，以及(b)形成於該鋁層上之一陶瓷塗膜。在諸多實施例中，多層保護膜可以在組裝處理腔室之前施加至該至少一組成零件或於該處理腔室中至少部分原位施加。

Description

用於工件處理腔室之組成零件的多層塗膜
[相關申請案]本申請案係主張於2018年12月13日申請之美國專利申請案第62/779,113號的優先權。上述申請案係為了所有目的而併於此以作為參考。
本揭露內容係關於工件處理工具，更具體而言，係關於施加至此等工具之保護性多層膜，以保護不受熱循環、腐蝕所致之損害以及因暴露至處理腔室中使用之各種化學物質所導致的潛在故障。
例如半導體晶圓和平面顯示器的工件典型上係在製造過程中利用各種處理工具進行處理。例如，常見各種沉積工具用來沉積各種薄膜於工件表面上。類似地，例如濕式及/或電漿蝕刻工具的各種蝕刻工具也常見用於自工件表面選擇性移除材料層。有多種不同的化學物質用於處理腔室中。
例如使用電漿蝕刻工具，工件便典型地暴露於富含氯及/或氟的電漿。在沉積期間，當施加射頻（RF）到一或多個反應氣體（如矽烷（SiH4 ）、一氧化二氮（N2 O）、氨（NH4 ）、氮氣（N2 ）等），電漿便於處理腔室中產生。且，利用沉積工具沉積在工件上的材料典型上亦會累積在暴露於處理腔室中的表面上。在「乾式清洗」的例行處理中，富含氯及/或氟的電漿可以在處理腔室中週期性地產生，以除去這些沉積物。類似地，使用蝕刻工具，氯及/或氟的電漿常見用於自工件中移除所選材料。
蝕刻及沉積工具的處理腔室均是由各式各樣的子組件（例如噴淋頭、工件加熱器、工件支架的一部分等）以及各種用於將各個子組件機械式地固定在一起的機械式零件（例如夾具、螺釘、螺栓、彈簧、銷、夾子或其他的機械式固定器）所構成。總的來說，這些子組件以及/或機械式零件，下文統稱為「組成零件」，其特徵在於（1）為暴露至處理腔室中之化學物質的任意金屬零件;及/或（2）受到某種類型的機械應力，例如由熱循環、摩擦及/或與另一組成零件的接觸或摩擦所造成的撓曲，例如使用夾具、彈簧、銷和夾子。
當這些組成零件暴露於處理腔室中使用的各種化學物質時，它們會趨於經受腐蝕，這是有問題的。對於例如夾具或彈簧之某些類型的零件，腐蝕會對它們的性能產生負面影響，這意味著隨著時間的流逝，這些零件將不再提供所需規格內的夾持力或彈簧力。另外，腐蝕最終會導致組成零件失效。腐蝕會進一步導致顆粒脫落。這些顆粒會污染正在進行處理的工件，從而不利地影響該處理的產出。
為了減輕了上述腐蝕問題，工件處理工具的廠商以及/或他們的供應商常會以陶瓷或鋁來包覆組成零件。由於處理腔室內存在挑戰，兩種材料都有其缺點。
陶瓷塗膜與其下伏組成零件之間的熱失配可能會導致此兩者以不同速率膨脹及收縮，尤其是在工件處理中典型上會經歷的高溫熱循環期間。其所產生的機械應力可能導致陶瓷破裂及/或失效。第二，陶瓷塗膜易受刮傷、剝落、及/或意外塗覆在顆粒污染物上，所有的這些都可能導致陶瓷塗膜失效。下伏的組成零件便會暴露至化學物質而引起腐蝕，最終可能導致組成零件不合乎規格及/或故障。
鋁塗膜典型上係利用電鍍處理來產生。在電鍍期間，通常將組成零件夾持住並同時保持在電鍍浴中。在夾持住的地方，通常會導致一個「掛架」痕跡(rack mark)，因為在這些地方會發生最少的電鍍或甚至沒有。結果，在電鍍處理中所捕獲的氣泡可能在稍後的工件處理期間被釋放到處理腔室內。此外，當暴露於鋁化學物質時，鋁塗膜會長出鋁氟化物層。鋁氟化物容易產生顆粒。氣泡的釋放以及顆粒化都是有問題的，因為它們傾向於在工件處理期間污染處理腔室內的處理環境。
此處公開了一種包含處理腔室的工件處理工具，該處理腔室具有由多層塗膜保護的至少一組成零件，該多層塗膜提供保護以免於受到熱循環和暴露於處理腔室中常用的化學物質所引起的損壞。在一個非獨有的實施例中，該多層塗膜包含（a）在該至少一組成零件上形成的鋁基底層和（b）在下伏的鋁層上形成的陶瓷塗膜。
多層塗膜具有許多優點。相對厚的基底鋁層提供對下伏組成零件的機械式保護。結果，在熱循環期間，因組成零件和鋁層之間的熱失配引起之機械應力而造成的損壞或故障被大幅地減輕或完全消除。此外，該相對厚的鋁層較不易因刮傷、剝落及/或意外包覆顆粒污染物而失效。另一方面，陶瓷層對於處理腔室中使用的許多化學物質（例如氟）是相對惰性的。結果，下伏的組成零件便極大地受到保護而不受腐蝕、防止或減輕了組成零件不合規格及/或失效。另外，陶瓷層用來覆蓋可能在下伏鋁層的電鍍處理中出現的掛架痕跡，從而防止了工件處理期間氣泡的釋放。
在非獨有的實施例中，基底層是厚度為25微米、250微米、在25 至250微米範圍之間的任意厚度、小於25微米或大於250微米的鋁。在更其它的實施例中，該陶瓷塗膜為非晶鋁氧化物陶瓷層、釔氧化物層或前述兩者的組合。在其他實施例中，陶瓷層的厚度為1微米或更小或10微米或更小。
在額外的實施例中，處理腔室包含一或多個組成零件，每個組成零件都由多層塗膜保護。該一或多個組成零件可以包含（a）暴露至處理腔室中之上述化學物質的任意金屬零件或零件;及/或（2）受到某種類型的機械應力，例如由熱循環、與另一機械零件的接觸或摩擦所造成的撓曲。此等的組成零件可以包含但不限於廣泛組合的子組件（例如噴淋頭、工件加熱器、工件支架的部分等）以及/或各種機械零件，例如夾具、螺釘、螺栓、彈簧、銷、夾子和其他機械式固定器。
在其他實施例中，可以以多種不同方式組裝工件處理工具的處理腔室。在第一個實施例中，首先將組成零件以下列方式塗覆以多層塗膜：（a）電鍍該鋁層，以及（b）使用原子層沉積（ALD）製程形成該陶瓷層。一旦塗覆完成，該組成零件便可用於組裝處理腔室。
在可以用沉積工具實施的替代性實施例中，該組成零件係（a）首先使用電鍍處理將鋁層塗覆於其上。一旦塗覆了鋁層，該組成零件便可用於組裝處理腔室。此後，該組成零件便可（b）使用沉積製程在處理腔室中原位塗覆陶瓷層。
工件處理工具可以是具有用於處理工件的處理腔室中的任何類型。在非獨有的實施例中，該工具可以是任何類型的沉積工具、或濕式或乾式的蝕刻工具。工件可以包含半導體晶圓、平面顯示器或任何需要處理的其他類型工件。
現在將參考如附圖所示之一些非獨有的實施例來詳細描述本申請案。在以下描述中，闡述了許多具體細節以便提供對本揭露內容的透徹理解。然而對於熟習本技藝者而言，顯而易見的是可以在沒有一些或所有這些具體細節的情況下實施本揭露內容。在其他情況下，並未詳細描述週知的處理步驟和/或結構，以免不必要地模糊本揭露內容。
圖1A及圖1B分別是示範性的沉積及蝕刻工件處理工具的圖。
參照圖1A，顯示示範性化學氣相沉積（CVD）工具10的圖。CVD工具10包含處理腔室12、噴淋頭14、用於支撐並定位待處理工件18的工件支架16、射頻（RF）產生器20。在諸多實施例中，CVD工具可以是電漿增強（PECVD）、低壓（LPCVD）、 超高真空（UHVCVD）、原子層沉積（ALD）、電漿增強原子層沉積（PEALD）或任何其它類型的CVD工具。
例如矽烷（SiH4 ）、一氧化二氮（N2 O）、氨（NH4 ）及/或氮氣（N2 ）的反應氣體係透過噴淋頭14而供應至處理腔室12中。在噴淋頭14中，該氣體（一或多種）通過一或多個氣室（未示出）而配送進入腔室12中之待處理工件18之表面上方的一般區域。接著由RF產生器20所產生的RF電勢被施加到噴淋頭14上的電極（未示出）。（RF電勢也可能被施加到工件支架18 ）。該RF電勢會在處理腔室12內產生電漿22。在電漿22中，充電的電子自反應氣體離子化或解離（即「破裂」），產生化學性反應自由基。當這些自由基反應時，便會在工件18上沉積並形成薄膜。
在工件處理期間，處理腔室12 通常會經歷熱循環。熱循環的範圍係由數個因子來決定，其包含工件的類型、使用的特定化學物質及欲沉積的材料、所需沉積速率等。也可以考慮的其它因素有為了防止損壞薄膜的熱預算、薄膜的物理和化學性質、以及當可行時使用較低溫處理的一般性偏好。
例如，在處理腔室12內使用鋁而不是陶瓷組成零件通常成本更低。然而使用鋁，在溫度超過450℃時易於弱化鋁或以其它方式不利地影響鋁。因此，在某種程度上，鋁零件的使用會使得熱循環的上限限制在大約450°C。在另一方面，對於升高的溫度，陶瓷比鋁的承受度更佳。如此，使用陶瓷的熱循環上限可以更高。因此，吾人應當理解，給定之熱循環的溫度範圍可以大幅地變化，例如從20°至450 °C或甚至從20°至800°C，取決於各種因素和上述其他考慮因素。這些高低溫度值僅僅是示例性，而不應被解釋為限制性。可以使用更低或更高的溫度值。
如前所述，沉積在工件18上的材料也會不經意地沉積在處理腔室12 內的各個其他表面上。為去除這些沉積物的堆積，通常會對工具10進行定期「乾式清洗」程序，其中將氯及/或氟化學物質引入腔室12，並施加RF功率以產生電漿。其反應就是沉積物被蝕刻或以其他方式從腔室12內的表面去除。一旦沉積物被實質上去除，工具10便接著再次以如上討論之方式對工件18進行處理。
參照圖1B，其顯示出示範性電漿蝕刻工具30的圖。電漿蝕刻工具30包含處理腔室32、功率電極38以及耦合到功率電極38的RF電源40。在操作過程中，例如氯和/或氟的蝕刻化學物質被引入到處理腔室32中，由RF電源40 施加RF功率至功率電極38，而產生電漿42。電漿42 會蝕刻掉工件36表面上的暴露材料，這在本領域中是眾所周知的。
處理工具30之處理腔室32亦會經受熱循環。在工件蝕刻期間，腔室32內部的溫度通常會升高。熱循環可以廣泛地變化且還取決於多種因素，例如工件的類型、被蝕刻的材料類型、蝕刻腔室之組成零件的材料等。例如在非獨有的實施例中，熱循環的上限可以是450 ℃ 或高達800 ℃。再一次，吾人應理解到這些值是示例性，而不應被解釋為限制性。可以使用更低或更高的溫度。
沉積工具10和蝕刻工具30的處理腔室12/32各自包含各式各樣的組成零件。如本文所使用的，用語「組成零件」旨在廣義地解釋為是指（a）暴露於處理腔室12/32中之化學物質的任何金屬零件，以及/或（b）受到某種類型的機械應力，例如由熱循環、與另一機械零件的接觸或摩擦所造成的撓曲。此等的組成零件可以包含但不限於廣泛組合的子組件（例如噴淋頭、工件加熱器（未顯示）、工件支架的部分等）以及/或各種機械零件，例如夾具、螺釘、螺栓、彈簧、銷、夾子和其他機械式固定器。在各個實施例中，該組成零件可以由各種金屬和/或合金製成，包含例如鋁、不銹鋼、含鐵合金、英高鎳718 (Inconel 718)、Nonel、鎳基合金90 (Nimonic 90)、Waspaloy、A286等。
圖2A至圖2D 為各個組成零件的圖示，其係根據本發明的非獨有實施例中而設置在工件處理工具之處理腔室中。在這些示例中，圖2A顯示負載分配墊圈。圖2B顯示保持環或「扣」環。圖2C顯示以軸承為中心的負載分配墊圈。最後，圖2D顯示波形彈簧的不同視圖。這些說明僅是示例性的，不應在任何方面解釋為限制性的。在實際的實施例中，可以被多層保護塗膜覆蓋的組成零件數量和類型太多，以至於無法在這裡實際地說明。
為了解決上述之組成零件的腐蝕、劣化以及潛在故障，本申請人提出使用多層塗膜。在非獨有的實施例中，多層塗膜包含（a）在該至少一組成零件上形成的鋁基底層和（b）在下伏的鋁層上形成的陶瓷塗膜。
在一非獨有的實施例中，基底鋁層具有25微米的厚度且由電鍍處理形成。陶瓷層的厚度為1微米或更小，且由原子層沉積（ALD）製程所形成。陶瓷塗膜的例子可以包含但不限於非晶鋁氧化物陶瓷層（Al2 O3 ）、釔氧化物層（Y2 O3 ）、或這兩者的疊層。吾人應當理解，關於該實施例所描述之多層塗膜的材料和尺寸是示例性的，且不應解釋為限制性的。可以使用各種不同材料和厚度的多層塗膜，並根據其機械性能以及/或針對不同化學物質的惰性來選擇。例如，鋁基底層的厚度為小於25微米、在25 至250微米之間、或大於250微米。由於ALD的緩慢沉積速率以及沉積膜中存在的應力，通常使用的陶瓷層的厚度係小於1微米。然而，同樣的，這不應被解釋為限制性的。可以使用例如10微米或更大的較厚層。
多層塗膜具有許多優點。相對厚的基底鋁層提供對下伏之組成零件的機械式保護。結果，在熱循環期間，因組成零件和鋁層之間的熱失配所引起之機械應力造成的故障被大幅地減輕或完全消除。此外，該相對厚的鋁層較不易因刮傷、剝落及/或意外包覆在顆粒污染物上而失效。另一方面，陶瓷層對於例如氟的諸多化學物質是具惰性的而提供對抗該等化學物質的保護。陶瓷層保護了下伏的組成零件不受腐蝕並防止了下伏鋁的顆粒化。另外，陶瓷層覆蓋了在鋁層的電鍍處理期間可能出現的掛架痕跡，從而防止了被捕獲之氣泡的釋放。
圖3A-3C 是各個多層塗膜的橫剖面圖，該多層塗膜係應用至根據本發明之非獨有的實施例中的示例性組成零件50 。
在圖3A中，鋁層52 形成在組成零件50的表面上。在各個實施例中，鋁層52係藉由電鍍處理而形成，且其具有至少25微米的厚度。在替代性的實施例中，鋁層的厚度可以在25 至250 微米、小於25微米或大於250微米的範圍內。另外，鋁的純度水平也可以變化。在一些實施例中，可以使用高純度的鋁，而在其他實施例中，可以使用較低純度的鋁。
在圖3B中，陶瓷塗層54形成在下伏的鋁層52上。在各個實施例中，陶瓷層的厚度為1微米或更小，且由原子層沉積（ALD）製程所形成。陶瓷塗層54的例子可以包含但不限於非晶鋁氧化物陶瓷層、釔氧化物層、或這兩者的疊層。在替代性的實施例中，可以使用任何沉積製程來形成陶瓷塗層54，且可以包含除了本文列出的那些之外的其他陶瓷材料。另外，厚度可以例如從1微米或更小、10微米或更小、或大於10微米來變化。
圖4A及圖4B 為流程圖，說明根據本發明之非獨有實施例中用於組裝工件處理工具的步驟。
參照圖4A，顯示出一流程圖60 ，其中在組裝工具之處理腔室之前進行組成零件的多層塗覆。
初始步驟62涉及使用任一上述實施例而對一或多個組成零件施加多層塗覆。換句話說，該一或多個組成零件至少塗覆有（a）在至少一組成零件50上形成的鋁基底層52，以及（b）在下伏的鋁層上形成的陶瓷塗層54。再一次，本文所用的用語「組成零件」旨在廣義地解釋且包含但不限於任何上面列出之可能經受機械應力和/或暴露於處理腔室內之化學物質的組成零件。
在步驟64中，至少部分地使用具有多層塗膜的組成零件以及其他未塗膜的零件和/或子組件來組裝工具的處理腔室。此後，如本領域眾所周知的那樣，對處理腔室和工具進行測試並使其可操作。
在步驟66中，該工具係用於處理例如半導體晶圓、平面顯示器等工件。在各個實施例中，該工具可以是用於將薄膜沉積到工件上的沉積工具或用於選擇性地從工件上去除材料的蝕刻工具。
參照圖4B，顯示流程圖70，其中，組成零件的多層塗覆係部分地在組裝工具之處理腔室之前發生，且在已組裝了處理工具並且可操作之後部分地原位發生。對於該實施例，僅可以使用沉積工具。
初始步驟72係涉及使用任一上述實施例而對一或多個組成零件以（a）鋁基底層52進行部分塗覆。
在步驟74中，使用僅塗覆有鋁基底層52的一或多個組成零件來組裝工具之處理腔室。此後，如本領域中眾所周知的那樣，對工具進行測試並使其可操作。
在步驟76中，（b）的陶瓷塗層54係原位形成於該工具之處理腔室中。例如，利用原子層沉積（ALD）工具，使用任一上述實施例而將陶瓷層54沉積到鋁基底層52上。對於該實施例，吾人應當理解，處理腔室內的其他暴露表面也可能被塗覆陶瓷材料，除非採取步驟來遮蓋或以其他方式防止在這些表面上發生沉積。
最後，在步驟78中，該工具係用於處理工件。
如圖4B所示，一個值得注意的優點是能夠不時地在處理腔室中原位重新塗覆陶瓷層54。由於處理工具係用來處理工件，因此陶瓷層54可能會因反覆暴露於各種化學物質而劣化。有了原位形成陶瓷塗膜54的能力，該一或多個組成零件可以週期性地重新塗覆而將其當作日常維護程序的一部分，而不需拆卸處理腔室及/或工具。
吾人應該理解的是，儘管本文所描述的實施例很大幅度的與沉積和蝕刻工具有關，但這絕不應解釋為限制性的。相反的，此處所描述的標的可以與任何類型的工件處理工具一起使用，而與工件的類型或工件的處理方式無關。
吾人應該理解的是，本文提供的實施例僅是示例性的，不應在任何方面解釋為限制性的。雖然此處僅詳細描述幾個實施例，但是應當理解的是，本申請案可以在不脫離本文所提供之揭露內容的精神或範圍的情況下以許多其他形式來實現。因此，本實施例應被認為是說明性的而不是限制性的，且不限於此處所給出的細節，而是可以在所附申請專利範圍的範圍和等效物中進行修改。
10:CVD工具 12:處理腔室 14:噴淋頭 16:工件支架 18:工件 20:射頻（RF）產生器 22:電漿 30:電漿蝕刻工具 32:處理腔室 34:工件支架 36:工件 38:功率電極 40:RF電源 42:電漿 50:組成零件 52:鋁基底層 54:陶瓷塗層 60:流程圖 62:步驟 64:步驟 66:步驟 70:流程圖 72:步驟 74:步驟 76:步驟 78:步驟
透過參考下面描述以及附圖，將最佳地理解本申請案及其優點，其中：
圖1A和1B 為示範性沉積及蝕刻工具之處理腔室圖，其係用於根據本發明之非獨有實施例中之工件處理;
圖2A-2D 為各種組成零件之說明，該等組成零件係設置於根據本發明之非獨有實施例之處理腔室中;
圖3A-3B為根據本發明之非獨有實施例中施加至組成零件上的各個多層塗膜的橫剖面圖;
圖4A和4B為流程圖，說明根據本發明之非獨有實施例中之組裝工件處理工具之步驟;
在附圖中，有時使用相似的參考標號來指稱相似的結構元件。吾人亦應理解附圖中的描繪為示意性的，且不一定按比例繪製。
60:流程圖
62:步驟
64:步驟
66:步驟

Claims (29)

  1. 一種用以處理工件的處理工具，該處理工具包含處理腔室，該處理腔室包含具有一多層塗膜的至少一組成零件，其中藉由包含下列者之步驟而形成該多層塗膜：(a)於該至少一組成零件上電鍍一鋁層，以及(b)於該鋁層上提供一陶瓷塗膜之一原子層沉積。
  2. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜為一非晶鋁氧化物陶瓷層。
  3. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜為一釔氧化物層。
  4. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜為非晶鋁氧化物陶瓷與釔氧化物的疊層。
  5. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜具有1微米或更薄之厚度。
  6. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜具有10微米或更薄之厚度。
  7. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜具有超過1微米之厚度。
  8. 如請求項1之用以處理工件的處理工具，其中該鋁層具有低於25微米之厚度。
  9. 如請求項1之用以處理工件的處理工具，其中該鋁層具有25微米或更厚之厚度。
  10. 如請求項1之用以處理工件的處理工具，其中該鋁層具有25-250微米之厚度。
  11. 如請求項1之用以處理工件的處理工具，其中該鋁層具有超過250微米之厚度。
  12. 如請求項1之用以處理工件的處理工具，其中該鋁層具有25微米或更厚的厚度，且該陶瓷塗膜具有1微米或更薄之厚度。
  13. 如請求項1之用以處理工件的處理工具，其中該陶瓷塗膜會覆蓋形成於電鍍期間產生之該鋁層中的掛架痕跡。
  14. 如請求項1之用以處理工件的處理工具，其中該組成零件為暴露至該處理腔室中之化學物質且受到機械應力的任意金屬零件。
  15. 如請求項1之用以處理工件的處理工具，其中該組成零件係選自該處理腔室內的多個子組件及該處理腔室內的多個機械式零件，其中該等子組件包括包含下列者之群組：該處理腔室內之一子組件、該處理腔室內之一噴淋頭、配置於該處理腔室中之一工件加熱器、配置於該處理腔室中之一工件支架的一部份，且其中該等機械式零件包括配置於該處理腔室中之一夾具、螺釘、螺栓、彈簧、墊圈、銷、夾子或機械式固定器。
  16. 如請求項1之用以處理工件的處理工具，其中該處理工具係配置成執行一沉積製程或一蝕刻製程。
  17. 一種工件處理工具的組裝方法，包含組裝一處理腔室，其中該處理腔室包含具有一多層塗膜之至少一組成零件，其中藉由包含下列者之步驟而形成該多層塗膜：(a)於該至少一組成零件上電鍍一鋁層，以及(b)於該鋁層上提供一陶瓷塗膜之一原子層沉積。
  18. 如請求項17之工件處理工具的組裝方法，其步驟更包含：電鍍該至少一組成零件，以形成於該至少一組成零件上形成的該鋁層；以及在該電鍍步驟之後，沉積形成於該鋁層上之該陶瓷塗膜，其中該電鍍步驟及該沉積步驟係於使用該組成零件組裝該處理腔室之前執行。
  19. 如請求項17之工件處理工具的組裝方法，其步驟更包含：電鍍該至少一組成零件，以形成該至少一組成零件上形成的該鋁層；利用具有該鋁層的該組成零件來組裝該處理腔室；以及在該處理腔室之該組裝步驟之後，於該處理腔室中原位沉積形成於該鋁層上之該陶瓷塗膜。
  20. 如請求項17之工件處理工具的組裝方法，其中該鋁層具有25-250微米之厚度。
  21. 如請求項17之工件處理工具的組裝方法，其中該鋁層具有25微米或更厚之厚度。
  22. 如請求項17之工件處理工具的組裝方法，其中該鋁層具有低於25微米之厚度。
  23. 如請求項17之工件處理工具的組裝方法，其中該鋁層具有超過250微米之厚度。
  24. 如請求項17之工件處理工具的組裝方法，其中該陶瓷塗膜包含下列其中之一：(a).非晶鋁氧化物陶瓷層；(b).釔氧化物層； (c).非晶鋁氧化物陶瓷與釔氧化物的疊層。
  25. 如請求項17之工件處理工具的組裝方法，其中該陶瓷塗膜具有1微米或更薄之厚度。
  26. 如請求項17之工件處理工具的組裝方法，其中該陶瓷塗膜具有10微米或更薄之厚度。
  27. 如請求項17之工件處理工具的組裝方法，其中該陶瓷塗膜具有超過1微米之厚度。
  28. 如請求項17之工件處理工具的組裝方法，其中該組成零件為下列其中之一的任意金屬零件：(a).暴露至該處理腔室中之化學物質；(b).受到機械應力；或(c).(a)與(b)兩者兼具。
  29. 如請求項17之工件處理工具的組裝方法，其中該處理工具為一沉積工具或一蝕刻工具。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101647098A (zh) * 2007-03-29 2010-02-10 朗姆研究公司 半导体材料处理设备的镀铝部件和制造该部件的方法
TW201840892A (zh) * 2017-01-20 2018-11-16 美商應用材料股份有限公司 由原子層沉積的多層抗電漿塗層

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371467B2 (en) * 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
CN101010448B (zh) * 2005-06-23 2010-09-29 东京毅力科创株式会社 半导体处理装置用的构成部件及其制造方法
KR101588565B1 (ko) * 2007-11-01 2016-01-26 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버의 개구를 밀봉하는 방법 및 장치
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
FI125358B (fi) * 2010-07-09 2015-09-15 Teknologian Tutkimuskeskus Vtt Oy Termisesti ruiskutettu täysin amorfinen oksidipinnoite
TW201435138A (zh) * 2012-12-21 2014-09-16 Applied Materials Inc 具高清洗效率的對稱氣體分配設備及方法
US9123651B2 (en) * 2013-03-27 2015-09-01 Lam Research Corporation Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
KR102603742B1 (ko) * 2016-03-11 2023-11-16 어플라이드 머티어리얼스, 인코포레이티드 알루미늄 반도체 프로세스 장비를 위한 배리어 층으로서의 알루미늄 전기도금 및 산화물 형성
KR101896768B1 (ko) * 2016-08-26 2018-10-18 연세대학교 산학협력단 박리성 코팅층, 이의 제조 방법 및 이를 이용한 도금 장치
KR102400583B1 (ko) * 2017-09-22 2022-05-20 삼성전자주식회사 초임계 처리용 공정챔버 및 이를 구비하는 기판처리 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101647098A (zh) * 2007-03-29 2010-02-10 朗姆研究公司 半导体材料处理设备的镀铝部件和制造该部件的方法
TW201840892A (zh) * 2017-01-20 2018-11-16 美商應用材料股份有限公司 由原子層沉積的多層抗電漿塗層

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