TWI832350B - Substrate processing apparatus and method of driving door assembly - Google Patents
Substrate processing apparatus and method of driving door assembly Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 120
- 238000004080 punching Methods 0.000 claims description 48
- 230000005611 electricity Effects 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 26
- 238000009792 diffusion process Methods 0.000 description 23
- 239000002245 particle Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000035515 penetration Effects 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
- F16K3/0281—Guillotine or blade-type valves, e.g. no passage through the valve member
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- General Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
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Abstract
本發明提供一種處理基板的設備。處理基板的設備可包括:腔室,其具有處理基板的處理空間,形成有供基板進出的載入口;氣體供應單元,其向處理空間供應製程氣體;電漿單元,其從製程氣體產生電漿;以及門組合件,其開閉載入口;且,門組合件可包括:門,其開閉載入口;以及門驅動器,其使門在打開位置與關閉位置間移動;門可包括:外殼,其在一側面形成有供氣流流入的通路並具有內部空間;閥,其打開或關閉通路;以及閥驅動器,其使閥在打開位置或關閉位置間移動。The present invention provides an apparatus for processing a substrate. The equipment for processing a substrate may include: a chamber having a processing space for processing the substrate and forming a loading port for the substrate to enter and exit; a gas supply unit that supplies process gas to the processing space; and a plasma unit that generates electricity from the process gas. slurry; and a door assembly that opens and closes the loading port; and, the door assembly may include: a door that opens and closes the loading port; and a door actuator that moves the door between an open position and a closed position; the door may include: a housing , which is formed with a passage for air flow to flow into on one side and has an internal space; a valve that opens or closes the passage; and a valve driver that moves the valve between an open position or a closed position.
Description
本發明係關於一種基板處理設備,更詳細地,係關於一種利用電漿處理基板的基板處理設備。The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that utilizes plasma to process a substrate.
一般而言,在半導體元件的製造製程中,使用利用電漿來處理基板的多種製程。電漿是指由離子或自由基以及電子等構成並離子化的氣體狀態。電漿因極高溫度或強電場或高頻電磁場(RF Electromagnetic Fields)而產生。這種製程使用蝕刻、沉積以及清洗製程等。Generally speaking, in the manufacturing process of semiconductor devices, various processes using plasma to treat substrates are used. Plasma refers to an ionized gas state composed of ions, free radicals, electrons, etc. Plasma is generated by extremely high temperatures or strong electric fields or high-frequency electromagnetic fields (RF Electromagnetic Fields). This process uses etching, deposition and cleaning processes.
圖1是示出門在普通製程腔室一側壁打開狀態的圖。圖2是放大示出圖1的A部分的圖。參照圖1和圖2,在腔室9000形成有供基板載入或載出的載入口。另外,為使腔室9000與外部環境隔絕,配備打開或關閉載入口的門組合件9200。腔室內部的壓力與腔室外部的壓力不同。因此,門組合件移動以開閉載入口時,透過門組合件與載入口之間空間,腔室外部的氣流流入腔室內部。在腔室外部的氣流中包含各種顆粒(Particle)。因此,顆粒流入腔室內部。流入腔室內部的顆粒對腔室內部環境產生影響,導致基板處理製程不良。FIG. 1 is a diagram showing a state in which the door is opened on one side wall of a common process chamber. FIG. 2 is an enlarged view of part A of FIG. 1 . Referring to FIGS. 1 and 2 , a loading port for loading or unloading a substrate is formed in the
[技術課題][Technical Issue]
本發明之一個目的係提供一種能夠在打開腔室門之前最大限度減小腔室的內部壓力與腔室的外部壓力差異的基板處理設備及驅動門組合件的方法。An object of the present invention is to provide a substrate processing apparatus and a method of driving the door assembly that can minimize the difference between the internal pressure of the chamber and the external pressure of the chamber before opening the chamber door.
另外,本發明之一個目的係提供一種能夠最大限度減少顆粒流入腔室內部的基板處理設備及驅動門組合件的方法。In addition, it is an object of the present invention to provide a method for a substrate processing equipment and a drive door assembly that can minimize the inflow of particles into a chamber.
本發明要解決的課題並不限定於上述課題,未提及的課題是本發明所屬技術領域的技藝人士可從本說明書及圖式而明確理解的。 [技術方案] The problems to be solved by the present invention are not limited to the above-mentioned problems. Those skilled in the art to which the present invention belongs can clearly understand the problems not mentioned above from the description and drawings. [Technical solution]
本發明提供一種處理基板的設備。處理基板的設備可包括:腔室,前述腔室具有處理基板的處理空間,形成有供基板進出的載入口;氣體供應單元,前述氣體供應單元向前述處理空間供應製程氣體;電漿單元,前述電漿單元從前述製程氣體產生電漿;以及門組合件,前述門組合件開閉前述載入口;而且,前述門組合件可包括:門,前述門開閉前述載入口;以及門驅動器,前述門驅動器使前述門在打開位置與關閉位置間移動;前述門可包括:外殼,前述外殼在一側面形成有供氣流流入的通路並具有內部空間;閥,前述閥打開或關閉前述通路;以及閥驅動器,前述閥驅動器使前述閥在打開位置或關閉位置間移動。The present invention provides an apparatus for processing a substrate. The equipment for processing the substrate may include: a chamber, the aforementioned chamber having a processing space for processing the substrate, and forming a loading port for the substrate to enter and exit; a gas supply unit, the aforementioned gas supply unit supplies process gas to the aforementioned processing space; a plasma unit, The aforementioned plasma unit generates plasma from the aforementioned process gas; and a door assembly, the aforementioned door assembly opens and closes the aforementioned loading inlet; and the aforementioned door assembly may include: a door, the aforementioned door opens and closes the aforementioned loading inlet; and a door driver, The aforementioned door actuator moves the aforementioned door between an open position and a closed position; the aforementioned door may include: a housing, the aforementioned housing is formed with a passage for air flow to flow into on one side and has an internal space; a valve, the aforementioned valve opens or closes the aforementioned passage; and A valve driver moves the valve between an open position or a closed position.
根據一實施例,前述設備可進一步包括控制前述門驅動器和前述閥驅動器的控制器,其中,前述控制器在從前述處理空間載出基板時,可控制前述閥驅動器以使前述閥移動到打開位置,然後控制前述門驅動器以使前述門移動到打開位置。According to an embodiment, the aforementioned apparatus may further include a controller that controls the aforementioned gate driver and the aforementioned valve driver, wherein the aforementioned controller may control the aforementioned valve driver to move the aforementioned valve to an open position when the substrate is unloaded from the aforementioned processing space. , and then control the aforementioned door driver to move the aforementioned door to the open position.
根據一實施例,可在前述內部空間配備沖孔構件,前述沖孔構件形成有供前述氣流流動的沖孔。According to one embodiment, the internal space may be provided with a punching member, and the punching member may be formed with punching holes for the airflow to flow.
根據一實施例,前述沖孔構件可包括過濾器。According to an embodiment, the aforementioned punching member may include a filter.
根據一實施例,前述沖孔構件可包括板,前述板配置於與前述門的一側面相向的另一側面,形成有多個沖孔。According to one embodiment, the punching member may include a plate disposed on the other side facing one side of the door and having a plurality of punching holes formed therein.
根據一實施例,前述沖孔構件可包括:板,前述板配置於與前述門的一側面相向的另一側面,形成有多個沖孔;以及過濾器,前述過濾器配置於前述通路與前述板之間。According to one embodiment, the punching member may include: a plate disposed on the other side opposite to one side of the door and formed with a plurality of punching holes; and a filter disposed between the passage and the door. between the boards.
根據一實施例,前述沖孔的面積可小於前述通路的面積。According to an embodiment, the area of the punching hole may be smaller than the area of the passage.
另外,本發明提供一種處理基板的設備。處理基板的設備可包括:腔室,前述腔室形成有供基板進出的載入口;以及門組合件,前述門組合件開閉前述載入口;而且,前述門組合件可包括:門,前述門位於前述腔室的外側並開閉前述載入口;以及門驅動器,前述門驅動器使前述門在打開位置與關閉位置間移動;前述門可包括:外殼,前述外殼在一側面形成有供氣流流入的通路並具有內部空間;閥,前述閥打開或關閉前述通路;以及閥驅動器,前述閥驅動器使前述閥在打開位置或關閉位置間移動。In addition, the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a chamber formed with a loading port for the substrate to enter and exit; and a door assembly that opens and closes the loading port; and the door assembly may include: a door, the aforementioned door assembly opening and closing the loading port. The door is located outside the aforementioned chamber and opens and closes the aforementioned loading inlet; and a door driver, the aforementioned door driver moves the aforementioned door between an open position and a closed position; the aforementioned door may include: a shell, and the aforementioned shell is formed with an air flow inlet on one side. The passage has an internal space; a valve, the aforementioned valve opens or closes the aforementioned passage; and a valve driver, the aforementioned valve driver moves the aforementioned valve between an open position or a closed position.
根據一實施例,前述設備可進一步包括控制前述門驅動器和前述閥驅動器的控制器,其中,前述控制器在從前述腔室載出基板時,可控制前述閥驅動器以使前述閥移動到打開位置,前述閥移動到打開位置後,可控制前述門驅動器以使前述門移動到打開位置。According to an embodiment, the aforementioned device may further include a controller that controls the aforementioned door driver and the aforementioned valve driver, wherein the aforementioned controller may control the aforementioned valve driver to move the aforementioned valve to an open position when the substrate is unloaded from the aforementioned chamber. , after the aforementioned valve moves to the open position, the aforementioned door driver can be controlled to move the aforementioned door to the open position.
根據一實施例,可在前述內部空間包括沖孔構件,前述沖孔構件形成有供前述氣流流動的沖孔。According to one embodiment, the internal space may include a punching member, and the punching member may be formed with punching holes for the airflow to flow.
根據一實施例,前述沖孔構件可包括過濾器。According to an embodiment, the aforementioned punching member may include a filter.
根據一實施例,前述沖孔構件可包括:板,前述板配置於與前述門的一側面相向的另一側面,形成有多個沖孔;以及過濾器,前述過濾器配置於前述通路與前述板之間。According to one embodiment, the punching member may include: a plate disposed on the other side opposite to one side of the door and formed with a plurality of punching holes; and a filter disposed between the passage and the door. between the boards.
根據一實施例,前述沖孔的面積可小於前述通路的面積。According to an embodiment, the area of the punching hole may be smaller than the area of the passage.
另外,本發明提供一種在處理基板的設備中驅動門組合件的方法。驅動門組合件的方法可包括:閥打開步驟,前述閥移動到打開位置以打開前述通路;以及門打開步驟,在前述閥打開步驟之後,前述門移動到打開位置。Additionally, the present invention provides a method of driving a door assembly in an apparatus for processing substrates. The method of driving the door assembly may include: a valve opening step in which the valve is moved to an open position to open the passage; and a door opening step in which the door is moved to an open position after the valve opening step.
根據一實施例,前述基板處理設備可為在真空壓下處理基板的設備。 [發明效果] According to an embodiment, the aforementioned substrate processing equipment may be equipment that processes the substrate under vacuum pressure. [Effects of the invention]
根據本發明一實施例,能夠在打開腔室門之前最大限度減小腔室的內部壓力與腔室的外部壓力的差異。According to an embodiment of the present invention, the difference between the internal pressure of the chamber and the external pressure of the chamber can be minimized before opening the chamber door.
另外,根據本發明一實施例,能夠最大限度減少顆粒流入腔室的內部。In addition, according to an embodiment of the present invention, the flow of particles into the interior of the chamber can be minimized.
本發明的效果不限於上述效果,未提及的效果是本發明所屬技術領域的技藝人士可從本說明書及圖式明確理解的。The effects of the present invention are not limited to the above-mentioned effects. Those skilled in the art can clearly understand the effects not mentioned above from this description and the drawings.
下文參照隨附圖式,更詳細地描述本發明的實施例。本發明的實施例可變形為多種形態,不得解釋為本發明的範圍限定於以下描述的實施例。提供本實施例是為了向本行業一般技藝人士更完整地描述本發明。因此,圖式中的構成要素的形狀等進行誇張以強調更明確的描述。Embodiments of the invention are described in more detail below with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The present examples are provided to more fully describe the present invention to those of ordinary skill in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize clearer descriptions.
下文參照圖3至圖15,對本發明的實施例進行詳細描述。Embodiments of the present invention are described in detail below with reference to FIGS. 3 to 15 .
圖3是簡要示出本發明的基板處理設備的圖。參照圖3,基板處理設備1具有設備前端模組(Equipment Front End Module;EFEM)20和處理模組30。設備前端模組20和處理模組30沿一個方向配置。FIG. 3 is a diagram schematically showing the substrate processing apparatus of the present invention. Referring to FIG. 3 , the
設備前端模組20具有載入埠(load port)200和移送框架220。載入埠200沿第一方向2配置於設備前端模組20的前方。載入埠200具有多個支撐部202。各個支撐部202沿第二方向4配置成一列,安放有收納將向製程提供的基板W和製程處理完畢的基板W的承載架C(例如載片盒、FOUP等)。在承載架C上收納將向製程提供的基板W和製程處理完畢的基板W。移送框架220配置於載入埠200與處理模組30之間。移送框架220包括配置於其內部並在載入埠200與處理模組30之間移送基板W的第一移送機器人222。第一移送機器人222沿著在第二方向4上配備的移送軌道224移動,在承載架C與處理模組30間移送基板W。The device front-
處理模組30包括裝載閘腔室300、傳輸腔室400及製程腔室500。在本發明一實施例中,腔室具有處理基板的處理空間並形成有供基板進出的載入口,包括裝載閘腔室300、傳輸腔室400或製程腔室500。The
裝載閘腔室300鄰接移送框架220配置。作為一個示例,裝載閘腔室300可配置於傳輸腔室400與設備前端模組20之間。裝載閘腔室300提供供將向製程提供的基板W在移送到製程腔室500之前或製程處理完畢的基板W在移送到設備前端模組20之前等待的空間。The
傳輸腔室400鄰接裝載閘腔室300配置。傳輸腔室400從上部觀察時具有多邊形的主體。例如,傳輸腔室400從上部觀察時可具有五邊形的主體。在主體的外側,沿著主體外周配置有裝載閘腔室300和多個製程腔室500。在主體的各側壁上形成有供基板W進出的通路(未示出),通路連接傳輸腔室400與裝載閘腔室300或製程腔室500。在各通路上配備對通路進行開閉而使內部密閉的門(未示出)。在傳輸腔室400的內部空間,配置有在裝載閘腔室300與製程腔室500間移送基板W的第二移送機器人420。第二移送機器人420將在裝載閘腔室300等待的未處理的基板W移送到製程腔室500,或將製程處理完畢的基板W移送到裝載閘腔室300。而且,為了向多個製程腔室500依次提供基板W而在製程腔室500間移送基板W。例如,如圖1所示,當傳輸腔室400具有五角形的主體時,在與設備前端模組20鄰接的側壁上分別配置有裝載閘腔室300,在其餘側壁上連續配置有製程腔室500。傳輸腔室400的形狀不限於此,可根據要求的製程模組而變形為多樣形態配備。The
製程腔室500沿著傳輸腔室400的外周配置。製程腔室500可配備多個。在各個製程腔室500內可執行對基板W的製程處理。製程腔室500從第二移送機器人420接到移送的基板W並執行製程處理,將製程處理完畢的基板W提供給第二移送機器人420。在各個製程腔室500中進行的製程處理可彼此不同。The
圖4是簡要示出圖1的基板處理設備的製程腔室中執行電漿處理製程的製程腔室的圖。參照圖4,製程腔室500利用電漿在基板W上執行既定的製程。作為一個示例,可蝕刻或拋光(Ashing)基板W上的薄膜。薄膜可為多晶矽膜、氧化膜及氮化矽膜等多樣種類的膜。視情況,薄膜可為自然氧化膜或化學產生的氧化膜。4 is a diagram schematically illustrating a process chamber that performs a plasma processing process among the process chambers of the substrate processing apparatus of FIG. 1 . Referring to FIG. 4 , the
製程腔室500包括處理室520、電漿產生室540、擴散室560以及排氣室580。The
處理室520提供放置基板W並對基板W執行處理的處理空間5200。在後述的電漿產生室540中使製程氣體放電而產生電漿(Plasma),並將其供應給處理室520的處理空間5200。處理室520內部滯留的製程氣體及/或在處理基板W的過程中發生的反應副產物等透過後述的排氣室580排出到外部。由此,可將處理室520內的壓力保持在設置壓力。處理室520可包括外殼5220、支撐單元5240以及排氣擋板5260。The
在外殼5220的內部可具有執行基板處理製程的處理空間5200。外殼5220的上部可打開。外殼5220的外壁可以導體配備。作為一個示例,外殼5220的外壁可以包括鋁的金屬材質配備。在外殼5220的底面形成有排氣孔5222。可透過排氣孔5222將處理空間5200內製程氣體及/或副產物排出到處理空間5200的外部。排氣孔5222可與後述的排氣室580包括的構成要素連接。There may be a
在外殼5220的側壁可形成有載入口5201。載入口5201可發揮供基板W載入或載出的空間的功能。基板W透過載入口5201載入到外殼5220的內部,視情況,基板W透過載入口5201載出到外殼5220的外部。載入口5201可被門組合件600開閉。A
圖5是簡要示出圖4所示一實施例的門組合件的圖。參照圖5,門組合件600可打開或關閉載入口5201。門組合件600可包括門620和門驅動器640。FIG. 5 is a diagram schematically showing the door assembly of the embodiment shown in FIG. 4 . Referring to Figure 5,
門620可打開或關閉載入口5201。門620可藉助於後述的門驅動器640而在打開位置或關閉位置間移動。門620可包括外殼622、閥624、閥驅動器626以及沖孔構件630。
外殼622可大致配備成長方體形狀。外殼622從正面觀察時,大致可大於載入口5201的面積。外殼622從正面觀察時,可覆蓋載入口5201。因此,門620藉助於後述的門驅動器640而移動到關閉位置後,載入口5201可被門620關閉。The
外殼622具有內部空間。在外殼622的內部空間可配置後述的過濾器634。在外殼622的一側面形成有供氣流流入的通路621。在與處理空間5200鄰接的外殼622另一側面相向的外殼622一側面,形成有供製程腔室500外部的氣流流入的通路621。可在外殼622的另一側面配置後述的板632。
閥624可位於門620的外部。閥624可位於外殼622的一側面。閥624可位於形成有通路621的外殼622的外側面。從正面觀察時,閥624的面積可配備得大於通路621的面積。閥624可打開或關閉通路621。閥624可藉助於後述的閥驅動器626而在打開位置或關閉位置間移動。
所謂打開位置,可定義為閥624打開通路621的位置。例如,若閥624位於打開位置,則閥624可位於通路621的外側區域。根據一實施例,若閥驅動器626使閥624向下方移動,使閥624位於打開位置,則閥624的上端可位於比通路621的下端更下側。即,在打開位置,閥624與通路621可不相互重疊。閥624透過打開通路621,可使製程腔室500的外部的氣流流入外殼622的內部空間。The so-called open position can be defined as the position where the
所謂關閉位置,可定義為閥624關閉通路621的位置。例如,若閥624位於關閉位置,則閥624可與通路621重疊。若閥624位於關閉位置,則閥624可完全覆蓋通路621的全部區域。即,若閥624位於關閉位置,則通路621可被閥624密閉。根據一實施例,若閥驅動器626使閥624向上方移動,使閥624位於關閉位置,則閥624的上端可位於比通路621的上端更上側。閥624透過關閉通路621,可切斷製程腔室500外部氣流流入外殼622的內部空間。The so-called closed position can be defined as the position where the
閥驅動器626可安裝於外殼622的外部。作為一個示例,閥驅動器626可安裝於外殼622的外側面。閥驅動器626可使閥624相對於外殼622的側面沿豎直方向移動。閥驅動器626可使閥624移動到打開通路621的打開位置。閥驅動器626可使閥624移動到關閉通路621的關閉位置。
作為一個示例,閥驅動器626使閥624移動到打開位置時,可使閥624向下方豎直移動。作為一個示例,閥驅動器626在使閥624移動到關閉位置時,可使閥624向上方豎直移動。閥驅動器626可變形為可提供驅動力的多樣公知設備而配備。As an example, when the
沖孔構件630可配備於外殼622內。沖孔構件630可配備於外殼622的內部空間。在沖孔構件630上形成有多個沖孔。在沖孔構件630上形成的沖孔可用作閥624打開而透過通路621流入的製程腔室500外部氣流流動的通路。在沖孔構件630上形成的沖孔的面積可配備成小於通路621的面積。沖孔構件630可包括板632和過濾器634。Punching member 630 may be provided within
板632可配置於與形成有通路621的門620一側面相向的門620另一側面。板632可配置於與形成有通路621的外殼622一側面相向的外殼622另一側面。板632從正面觀察時,可以與外殼622內部空間對應的形狀形成。The
在板632上形成有多個沖孔。多個沖孔可沿板632的外周方向隔開形成。例如,多個沖孔可在板632的全部區域隔開形成。多個沖孔各自的面積可配備成小於通路621的面積。多個沖孔可上下貫通板632而形成。作為一個示例,多個沖孔的直徑可彼此相同。不同於此,多個沖孔的直徑可彼此不同。多個沖孔的貫通方向可形成得與製程腔室500外部氣流流動的方向平行。作為一個示例,多個沖孔在板632內的貫通方向可與通路621長度方向平行。板632可與外殼622一體形成。但不限於此,板632可與外殼622相區分,配置於外殼622的另一側面。
過濾器634可過濾從外殼622外部流入的氣流中包含的顆粒等雜質。在過濾器634上可形成有可過濾雜質的細小的沖孔。從外殼622的外部流入的氣流,可穿過在過濾器634形成的沖孔並向著板632流動。從外殼622的外部流入的氣流中包含的雜質無法穿過在過濾器634上形成的沖孔。因而氣流中包含的雜質可被過濾器634去除。一實施例的過濾器634可為能夠過濾雜質的公知的過濾器。The
過濾器634可配置於外殼622的內部空間。過濾器634在內部空間,可配置於外殼622的一側面與外殼622的另一側面之間。作為一個示例,過濾器634在內部空間,可配置於通路621與板632之間。過濾器634從側面觀察時,其長度方向可與板632上配備的多個沖孔的貫通方向垂直。根據一實施例,過濾器634的高度可與外殼622內部空間的高度對應,過濾器634的寬度可與外殼622內部空間的寬度對應。即,過濾器634從正面觀察時,可與外殼622的內部空間重疊地形成。The
門驅動器640可使門620移動到打開載入口5201的打開位置。門驅動器640可使門620移動到關閉載入口5201的關閉位置。門驅動器640可使門620相對於外殼5220側壁沿豎直方向或水平方向移動。Door actuator 640 may move
作為一個示例,門驅動器640使門620移動到打開位置時,可在使門620向相對於外殼5220側壁遠離的方向水平移動後,使門620向朝向下方的方向豎直移動。作為一個示例,門驅動器640使門620移動到關閉位置時,可在使門620向朝向上方的方向豎直移動後,使門620向相對於外殼5220側壁靠近的方向水平移動。As an example, when the door driver 640 moves the
門驅動器640可由馬達642和連接馬達642與門620的連接構件644構成。藉助於馬達642的驅動,連接構件644沿豎直或水平方向移動,從而可使門620相對於外殼5220側壁而沿豎直或水平方向移動。馬達642可配備成提供驅動力的公知的多樣設備。The door driver 640 may be composed of a motor 642 and a connection member 644 connecting the motor 642 and the
在上述示例中,以門驅動器640豎直或水平移動為例進行了描述,但不限於此。作為一個示例,門驅動器640可水平移動、豎直移動、或/和相對於地面傾斜移動。作為一個示例,門驅動器640可被驅動以使門620大致呈「Z」形移動。In the above example, description is made taking the vertical or horizontal movement of the door driver 640 as an example, but it is not limited thereto. As one example, door actuator 640 may move horizontally, vertically, or/and tilt relative to the ground. As one example, door actuator 640 may be driven to move
控制器700可控制閥驅動器626和門驅動器640。控制器700可控制閥驅動器626以使閥驅動器626在打開位置與關閉位置間移動。控制器700可控制門驅動器640以使門驅動器640在打開位置與關閉位置間移動。
控制器700可在從處理空間5200載出基板W時,控制閥驅動器626以使閥624移動到打開位置。作為一個示例,控制器700可在對基板W完成電漿處理後,且在從處理空間5200載出基板W之前,控制閥驅動器626以使閥624向下方豎直移動。控制器700可在對基板W完成電漿處理後,且在從處理空間5200載出基板W之前,控制閥驅動器626以使閥624打開通路621的一部分。控制器700在閥624打開一部分且經過設置時間後,可控制閥驅動器626以使閥624全部打開通路621。即,控制器700可從對基板W完成電漿處理的時間點起,直至閥624完全打開通路621的時間點為止,控制閥驅動器626以使通路621的開度加大。The
控制器700可在閥624完全打開通路621之後,控制門驅動器640以使門620移動到打開位置。控制器700可在閥624完全打開通路621之後,控制門驅動器640以使門620向遠離載入口5201的方向水平移動。控制器700在完成門620的水平移動後,可控制門驅動器640以使門620向下方豎直移動。門620向下方移動完成後,基板W可透過載入口5201運送。The
在打開與外部環境隔絕的腔室的載入口時,由於腔室內部與外部的環境條件差異,外部顆粒可流入處理空間內。特別是進行電漿製程的腔室由於保持真空壓,因而不保持真空壓的腔室的外部氣流可以高流速流入腔室的內部。這種現象即使在以低速打開腔室載入口的門時也一樣。在低速打開的情況下,由於腔室的外部壓力與內部壓力的差異,外部氣流也迅速流入在門與載入口之間形成的之間空間,處理空間內部被顆粒所污染。When opening the loading port of a chamber that is isolated from the external environment, external particles can flow into the processing space due to the difference in environmental conditions between the inside and outside of the chamber. In particular, a chamber that performs a plasma process maintains a vacuum pressure, so the external airflow of a chamber that does not maintain a vacuum pressure can flow into the interior of the chamber at a high flow rate. This phenomenon persists even when the chamber loading door is opened at low speed. In the case of low-speed opening, due to the difference between the external pressure and the internal pressure of the chamber, the external airflow also quickly flows into the space formed between the door and the loading port, and the inside of the processing space is contaminated by particles.
根據以上描述的本發明一實施例,在打開在製程腔室500中形成的載入口5201之前,先打開在門620上形成的閥624,從而可在載入口5201打開之前,最大限度減小製程腔室500內部與外部間的壓力差。因而可最大限度減少包含顆粒的外部氣流流入製程腔室500內。因此,可最大限度減少基板處理製程不良。According to an embodiment of the present invention described above, before opening the
圖6是簡要示出圖5的閥移動到打開位置時的氣流流動的圖。參照圖6,透過在門620的內部空間配置沖孔構件630,可最大限度減少因閥624打開導致的外部氣流及其包含的顆粒流入處理空間5200。具體地,透過過濾器634,可第一次過濾外部氣流中包含的顆粒,防止顆粒流入處理空間5200。進而,透過過濾器634,可降低透過通路621流入的外部氣流的流速。透過板632,可第二次過濾外部氣流中包含的顆粒。另外,被過濾器634減速的外部氣流碰撞板632上未形成沖孔的部分,從而可進一步減小外部氣流的流速。FIG. 6 is a diagram schematically showing the flow of air when the valve of FIG. 5 is moved to the open position. Referring to FIG. 6 , by arranging the punching member 630 in the inner space of the
再次參照圖4,支撐單元5240在處理空間5200支撐基板W。支撐單元5240可包括支撐板5242以及支撐軸5244。Referring again to FIG. 4 , the
支撐板5242可在處理空間5200支撐基板W。支撐板5242可被支撐軸5244支撐。支撐板5242可與外部電源連接,並透過接入的電力而產生靜電。所產生的靜電具有的靜電力可使基板W固定於支撐單元5240。
支撐軸5244可使對象物移動。例如,支撐軸5244可使基板W沿上下方向移動。作為一個示例,支撐軸5244可與支撐板5242結合,使支撐板5242升降以移動基板W。The
排氣擋板5260在處理空間5200中按區域均一排出電漿。排氣擋板5260從上部觀察時具有環狀。排氣擋板5260在處理空間5200內,位於外殼5220的內側壁與支撐單元5240之間。在排氣擋板5260上形成有多個排氣孔5262。排氣孔5262以朝向上下方向的方式配備。排氣孔5262以從排氣擋板5260上端延伸至下端的孔配備。排氣孔5262可沿著排氣擋板5260的圓周方向相互隔開排列。The
電漿產生室540使從後述氣體供應單元5440供應的製程氣體放電以產生電漿,並將產生的電漿供應到處理空間5200。The
電漿產生室540可位於處理室520的上部。電漿產生室540可位於比外殼5220和後述的擴散室560更上部。處理室520、擴散室560以及電漿產生室540可沿著與第一方向2和第二方向4均垂直的第三方向6,從地面依次配置。The
電漿產生室540可包括電漿腔室5420、氣體供應單元5440以及電力接入單元5460。The
電漿腔室5420可具有上面及下面開放的形狀。電漿腔室5420可具有上面及下面開放的筒狀。電漿腔室5420可具有上面及下面開放的圓筒狀。在電漿腔室5420的上端和下端可形成有具有直徑D1的開口。電漿腔室5420可具有電漿產生空間5422。電漿腔室5420可以包括氧化鋁Al2O3的材質配備。
電漿腔室5420的上面可被氣體供應埠5424密閉。氣體供應埠5424可與後述的氣體供應單元5440連接。製程氣體可透過氣體供應埠5424向電漿產生空間5422供應。供應到電漿產生空間5422的製程氣體可經後述的分配板5640均一分配到處理空間5200。The upper side of
氣體供應單元5440可供應製程氣體。氣體供應單元5440可與氣體供應埠5424連接。氣體供應單元5440供應的製程氣體可包含氟(Fluorine)及/或氫(Hydrogen)。The
電力接入單元5460可向電漿產生空間5422接入高頻電力。電力接入單元5460可為在電漿產生空間5422激發製程氣體以產生電漿的電漿源。電力接入單元5460可包括天線5462和電源5464。The
天線5462可為電感耦合型電漿(ICP)天線。天線5462可設置成線圈形狀。天線5462可在電漿腔室5420外部纏繞電漿腔室5420多圈。天線5462可在電漿腔室5420外部以螺旋形纏繞電漿腔室5420多圈。
天線5462可在對應於電漿產生空間5422的區域纏繞於電漿腔室5420。天線5462的一端從電漿腔室5420的正面觀察時,可設置於與電漿腔室5420的上部區域對應的高度。天線5462的另一端從電漿腔室5420的正面觀察時,可設置於與電漿腔室5420的下部區域對應的高度。
電源5464可向天線5462接入電力。電源5464可向天線5462接入高頻交流電源。接入天線5462的高頻交流電源可在電漿產生空間5422形成感應電場。供應到電漿產生空間5422內的製程氣體可從感應電場獲得離子化所需的能量以變換成電漿狀態。
電源5464可連接於天線5462的一端。電源5464可連接於在與電漿腔室5420的上部區域對應高度處設置的天線5462的一端。另外,天線5462的另一端可接地。在與電漿腔室5420的下部區域對應高度處設置的天線5462的另一端可接地。但不限於此,可為天線5462的一端接地,在天線5462的另一端連接電源5464。
擴散室560可使電漿產生室540產生的電漿擴散到處理空間5200。擴散室560可包括擴散腔室5620和擋板5640。The
擴散腔室5620提供使電漿腔室5420產生的電漿擴散的電漿擴散空間5622。擴散腔室5620可整體上具有倒漏斗形狀。擴散腔室5620可為上部與下部開放的形狀。電漿產生室540產生的電漿可在經過電漿擴散空間5622的同時擴散。流入電漿擴散空間5622的電漿可經後述的擋板5640而均一分配到處理空間5200。The
擴散腔室5620可位於電漿腔室5420的下部。擴散腔室5620可位於外殼5220與電漿腔室5420之間。外殼5220、擴散腔室5620以及電漿腔室5420可沿第三方向6,從地面起依次配置。擴散腔室5620的內周面可配備成非導體。作為一個示例,擴散腔室5620的內周面可配備成包括石英(Quartz)的材質。
擋板5640使流入處理空間5200的電漿向基板W均一供應。在擋板5640上可形成有多個擋板孔5642。多個擋板孔5642可配備成從擋板5640的上面至下面配置的貫通孔。多個擋板孔5642可在擋板5640的各區域均一地形成。擋板5640可與支撐單元5240相向地位於支撐單元5240的上部。擋板5640可位於支撐單元5240與電漿產生室540之間。電漿產生室540發生的電漿可穿過在擋板5640上形成的多個擋板孔5642。The
排氣室580可將處理室520內部的製程氣體和雜質排出到外部。排氣室580可將在基板W處理過程中發生的雜質排出到製程腔室500的外部。排氣室580可將供應到處理空間5200內的製程氣體排出到外部。排氣室580可包括排氣管線5820和泄壓構件5840。排氣管線5820可與在外殼5220的底面形成的排氣孔5222連接。排氣管線5820可與提供泄壓的泄壓構件5840連接。The
泄壓構件5840可向處理空間5200提供泄壓。泄壓構件5840可將處理空間5200殘留的電漿和雜質排出到外殼5220的外部。另外,泄壓構件5840可提供泄壓,以使處理空間5200的壓力保持為預設壓力。泄壓構件5840可為泵。但不限於此,泄壓構件5840可配備成提供泄壓的公知的設備。
在以上描述的本發明一實施例中,描述了在製程腔室500設置有門組合件600且門組合件600進行驅動的情形。但不限於此,門組合件600可設置於鎖定腔室300、傳輸腔室400並類似地驅動。In the above-described embodiment of the present invention, the
圖7和圖8是簡要示出圖4所示另一實施例的門組合件的圖。下文對本發明另一實施例的基板處理設備的描述中,除追加描述的內容之外,與對前述本發明一實施例的基板處理設備的描述類似,因而為防止重複,不再贅述。7 and 8 are diagrams schematically showing the door assembly of another embodiment shown in FIG. 4 . The following description of the substrate processing equipment according to another embodiment of the present invention is similar to the description of the substrate processing equipment according to one embodiment of the present invention, except for additional descriptions. Therefore, to avoid duplication, the details are not repeated.
參照圖7,門620可打開或關閉載入口5201。門620可藉助於門驅動器640而在打開位置或關閉位置間移動。門620可包括外殼622、閥624、閥驅動器626以及沖孔構件630。Referring to Figure 7,
外殼622可大致配備成長方體形狀。外殼622從正面觀察時,大致配備得大於載入口5201的面積。外殼622從正面觀察時,可覆蓋載入口5201。因此,若門620藉助於後述的門驅動器640而移動到關閉位置,則載入口5201可被門620關閉。外殼622具有內部空間。在外殼622的內部空間可配備有後述的過濾器634。在外殼622的一側面形成有供氣流流入的通路621。在與處理空間5200鄰接的外殼622另一側面相向的外殼622的一側面,形成有供製程腔室500外部氣流流入的通路621。The
閥624可位於門620的外部。閥624可位於外殼622的一側面。閥624可位於形成有通路621的外殼622的外側面。從正面觀察時,閥624的面積可配備成大於通路621的面積。閥624可打開或關閉通路621。閥624可藉助於閥驅動器626而在打開位置或關閉位置間移動。閥624透過打開通路621,可使製程腔室500的外部氣流流入外殼622的內部空間。閥624透過關閉通路621,可切斷製程腔室500的外部氣流流入外殼622的內部空間。
閥驅動器626可安裝於外殼622的外部。作為一個示例,閥驅動器626可設置於外殼622的外側面。閥驅動器626可使閥624移動到打開通路621的打開位置。閥驅動器626可使閥624移動到關閉通路621的關閉位置。閥驅動器626可使閥624相對於外殼622的側面而沿豎直方向移動。
作為一個示例,閥驅動器626使閥624移動到打開位置時,可使閥624向下方豎直移動。作為一個示例,閥驅動器626使閥624移動到關閉位置時,可使閥624向下方豎直移動。閥驅動器626可變形為可提供驅動力的多種公知的設備而配備。As an example, when the
沖孔構件630可設置於外殼622內。沖孔構件630可設置於外殼622的內部空間。在沖孔構件630上形成有沖孔。在沖孔構件630上形成的沖孔可用作供閥624打開並透過通路621流入的製程腔室500的外部氣流流動的空間。在沖孔構件630上形成的沖孔的面積可配備成小於通路621的面積。沖孔構件630可包括過濾器634。Punching member 630 may be disposed within
過濾器634可配置於外殼622的內部空間。過濾器634在內部空間中,可配置於外殼622的一側面與外殼622的另一側面之間。作為一個示例,過濾器634在內部空間中,可配置於通路621與板632之間。因此,可最大限度減小因閥624打開導致製程腔室500外部的氣流及其包含的顆粒被過濾器634去除並流入處理空間5200內。另外,可降低因閥624打開而流入製程腔室500內部的外部氣流的流速。因此,可最大限度減小製程腔室500的急劇壓力變動。The
參照圖8,門620可打開或關閉載入口5201。門620可藉助於門驅動器640而在打開位置或關閉位置間移動。門620可包括外殼622、閥624、閥驅動器626以及沖孔構件630。Referring to Figure 8,
外殼622大致可配備成長方體形狀。外殼622從正面觀察時,大致可配備成大於載入口5201的面積。外殼622從正面觀察時,可覆蓋載入口5201。因此,若門620藉助於後述的門驅動器640而移動到關閉位置,則載入口5201可被門620關閉。外殼622具有內部空間。在外殼622的一側面形成有供氣流流入的通路621。在與處理空間5200鄰接的外殼622另一側面相向的外殼622的一側面,形成有供製程腔室500外部的氣流流入的通路621。可在外殼622的另一側面配置後述的板632。The
閥624可位於門620的外部。閥624可位於外殼622的一側面。閥624可位於形成有通路621的外殼622的外側面。從正面觀察時,閥624的面積可配備成大於通路621的面積。閥624可打開或關閉通路621。閥624可藉助於閥驅動器626而在打開位置或關閉位置間移動。閥624透過打開通路621,可使製程腔室500的外部氣流流入外殼622的內部空間。閥624透過關閉通路621,可切斷製程腔室500的外部氣流流入外殼622的內部空間。
閥驅動器626可安裝於外殼622的外部。作為一個示例,閥驅動器626可安裝於外殼622的外側面。閥驅動器626可使閥624移動到打開通路621的打開位置。閥驅動器626可使閥624移動到關閉通路621的關閉位置。閥驅動器626可使閥624相對於外殼622的側面沿豎直方向移動。
作為一個示例,閥驅動器626使閥624移動到打開位置時,可使閥624向下方豎直移動。作為一個示例,閥驅動器626使閥624移動到關閉位置時,可使閥624向上方豎直移動。閥驅動器626可變形為可提供驅動力的多樣公知設備而配備。As an example, when the
沖孔構件630可配備於外殼622內。沖孔構件630可配備於外殼622的內部空間。在沖孔構件630上形成有多個沖孔。在沖孔構件630上形成的沖孔可用作供閥624打開並透過通路621流入的製程腔室500的外部氣流流動的空間。在沖孔構件630上形成的沖孔的面積可配備成小於通路621的面積。沖孔構件630可包括板632。Punching member 630 may be provided within
板632可配置於與形成有通路621的門620一側面相向的門620另一側面。板632可配置於與形成有通路621的外殼622一側面相向的外殼622另一側面。板632上形成有多個沖孔。多個沖孔的面積可配備成小於通路621的面積。多個沖孔可上下貫通板632而形成。作為一個示例,多個沖孔的直徑可彼此相同。不同於此,多個沖孔的直徑可彼此不同。多個沖孔的貫通方向可與製程腔室500的外部氣流流動的方向平行。作為一個示例,多個沖孔在板632內的貫通方向可與通路621的長度方向平行。板632可與外殼622一體形成。但不限於此,板632可與外殼622相區分,配置於外殼622的另一側面。The
由於在板632上形成有多個沖孔,因此,因閥624打開所致製程腔室500外部的氣流及其包含的顆粒碰撞板632上未形成沖孔的部分。因此,可最大限度減少外部的氣流及其包含的顆粒由於閥624打開而直接流入製程腔室500內部。另外,可降低由於閥624打開而流入製程腔室500內部的外部氣流的流速。因此,可最大限度減小製程腔室500的急劇壓力變動。Since a plurality of punch holes are formed on the
圖9是簡要示出圖4所示另一實施例的門組合件的圖。圖10是簡要示出圖9的閥移動到打開位置時的氣流流動的圖。以下描述的本發明另一實施例的門組合件除了板之外,與圖5和圖6中描述的本發明一實施例的門組合件類似地配置。因而為防止重複,類似構成不再贅述。FIG. 9 is a diagram schematically showing the door assembly of another embodiment shown in FIG. 4 . FIG. 10 is a diagram schematically showing the air flow when the valve of FIG. 9 is moved to the open position. The door assembly of another embodiment of the invention described below is configured similarly to the door assembly of the one embodiment of the invention described in FIGS. 5 and 6 except for the panels. Therefore, to avoid duplication, similar components will not be described again.
參照圖9和圖10,板632可配置於與形成有通路621的門620一側面相向的門620另一側面。板632可配置於與形成有通路621的外殼622一側面相向的外殼622另一側面。板632可與外殼622一體形成。但不限於此,板632可與外殼622相區分,配置於外殼622的另一側面。Referring to FIGS. 9 and 10 , the
從正面觀察門620時,板632可具有第一區域和第二區域。第一區域可包括板632的中心。在閥624處於關閉位置的狀態下,從正面觀察門620時,第一區域可為與通路621重疊的區域。第二區域可為圍繞第一區域的區域。When
在板632上形成有多個沖孔。多個沖孔的面積可配備成小於通路621的面積。多個沖孔可上下貫通板632而形成。作為一個示例,多個沖孔的直徑可彼此相同。不同於此,多個沖孔的直徑可彼此不同。多個沖孔的貫通方向可與製程腔室500外部氣流流動的方向平行。作為一個示例,多個沖孔在板632內的貫通方向可與通路621長度方向平行。多個沖孔可在第一區域與第二區域中的第二區域形成。作為一個示例,多個沖孔可只在第二區域形成。
根據上述本發明的實施例,透過在門620的內部空間配置沖孔構件630,可最大限度減少因閥624打開所致外部氣流及其包含的顆粒流入處理空間5200。具體地,可藉助於過濾器634第一次過濾外部氣流中包含的顆粒,以防止顆粒流入處理空間5200。進而,可藉助於過濾器634而降低透過通路621流入的外部氣流的流速。According to the above embodiments of the present invention, by arranging the punching member 630 in the inner space of the
可藉助於板632而第二次過濾外部氣流中包含的顆粒。外部氣流穿過通路621而流入外殼622的內部空間。因此,透過不在板632的第一區域形成沖孔,從而使穿過通路621的外部氣流碰撞未形成沖孔的第一區域,從而可使外部氣流流速有效減速。Particles contained in the external air flow can be filtered a second time by means of
在上述本發明的實施例中,以閥624在打開位置與關閉位置間移動以開閉通路621的情形為例進行了描述。但不限於此,閥624可配備成可調節開口率的光圈。閥624移動到打開位置時,可完全打開閥624的光圈。閥624移動到關閉位置時,可完全關閉閥624的光圈。當閥624要調節從製程腔室500外部流入的氣流量時,閥624可調節光圈的打開率,以調節流入的外部氣流量。In the above embodiment of the present invention, the case where the
另外,在上述本發明的實施例中,以閥624藉助於閥驅動器626而上下移動並在關閉位置與打開位置間移動的情形為例進行了描述,但不限於此。In addition, in the above embodiment of the present invention, the
根據一實施例,閥驅動器626可使閥624在打開位置與關閉位置間左右移動。例如,閥驅動器626可使閥624在水平面上左右移動。視情況,閥驅動器626可使閥624在水平面上前進和後退移動。即,從正面觀察時,閥驅動器626可使閥624向在水平面上的一個方向移動,以便覆蓋通路621的全部區域。另外,從正面觀察時,閥驅動器626可使閥624向在水平面上的一個方向移動,以便使閥624不與通路621重疊。According to one embodiment, the
另外,閥驅動器626不僅可使閥624上下移動或左右移動,而且可使閥624沿對角線方向移動。另外,閥驅動器626可以一軸為基準而使閥624呈曲率移動。例如,閥624可藉助於閥驅動器626而呈弧形(Arc)移動。In addition, the
圖11是關於本發明一實施例的驅動門組合件的方法的順序圖。圖12是簡要示出圖11的電漿處理步驟的圖。圖13是簡要示出圖11的閥打開步驟的圖。圖14是簡要示出圖11的門打開步驟的圖。圖15是簡要示出圖11的基板載出步驟的圖。下文參照圖11至圖15,詳細描述本發明一實施例的驅動門組合件的方法。FIG. 11 is a sequence diagram of a method of driving a door assembly according to an embodiment of the present invention. FIG. 12 is a diagram schematically showing the plasma processing steps of FIG. 11 . FIG. 13 is a diagram schematically showing the valve opening step of FIG. 11 . FIG. 14 is a diagram schematically showing the door opening step of FIG. 11 . FIG. 15 is a diagram schematically showing the substrate unloading step of FIG. 11 . The following describes in detail a method of driving a door assembly according to an embodiment of the present invention with reference to FIGS. 11 to 15 .
參照圖11,本發明一實施例的驅動門組合件的方法可依次執行電漿處理步驟S10、閥打開步驟S20、門打開步驟S30、基板載出步驟S40、基板載入步驟S50、以及閥關閉和門關閉步驟S60。Referring to FIG. 11 , a method for driving a door assembly according to an embodiment of the present invention can sequentially perform the plasma processing step S10 , the valve opening step S20 , the door opening step S30 , the substrate unloading step S40 , the substrate loading step S50 , and the valve closing step. and door closing step S60.
參照圖12,電漿處理步驟S10在製程腔室500內針對基板W進行電漿處理。在電漿處理步驟S10中,門620和閥624分別位於關閉位置。因此,在電漿處理步驟S10中,可針對處理空間5200內部,以保持真空壓的狀態進行。Referring to FIG. 12 , the plasma treatment step S10 performs plasma treatment on the substrate W in the
參照圖13,閥打開步驟S20是閥624移動到打開位置。閥打開步驟S20是閥624從關閉位置移動到打開位置。閥624可藉助於閥驅動器626而向下方豎直移動。閥624可藉助於閥驅動器626而向下方滑動移動。閥624在從處理空間5200載出基板W時,可移動到打開位置。Referring to Figure 13, valve opening step S20 is to move
作為一個示例,在針對基板W完成電漿處理後,且在從處理空間5200載出基板W之前,閥624可向下方移動。作為一個示例,針對基板W完成電漿處理後,且在從處理空間5200載出基板W之前,閥624可向下方移動既定距離以打開通路621的一部分。閥624打開通路621的一部分之後若經過設置時間,則閥624可再次向下方移動以打開通路621的全部。即,閥624可向下方移動,以便從針對基板W完成電漿處理的時間點起至閥624完全打開通路621的時間點為止,使通路621的打開率逐漸增加。因此,可最大限度減少製程腔室500的外部氣流急劇流入真空壓狀態的處理空間5200內部。另外,在閥打開步驟S20中,可使閥624位於完全打開位置,直至製程腔室500的外部壓力與製程腔室500的內部壓力達成相同時為止。因此,在後述的門打開步驟S30中,即使打開載入口5201,也可最大限度減少外部的氣流由於壓力差異而急劇流入處理空間5200。As one example, after plasma processing is completed on substrate W and before substrate W is unloaded from
參照圖14,門打開步驟S30是門620移動到打開位置。門打開步驟S30是在閥打開步驟S20中閥624完全打開通路621之後,門620從關閉位置移動到打開位置。門620在閥624完全打開通路之後,門620向遠離載入口5201的方向水平移動。門620的水平移動完成後,門620向下方豎直移動。不同於此,門620水平移動之後,門620可進一步執行相對於地面傾斜的移動。門620執行傾斜移動後,門620也可向下方豎直移動。門620向下方豎直移動完成後,門打開步驟S30完成。Referring to FIG. 14 , the door opening step S30 is to move the
參照圖15,基板載出步驟S40從製程腔室500載出完成處理的基板W。基板載出步驟S40藉助於第二移送機器人420,從製程腔室500向傳輸腔室400運送完成處理的基板W。基板載入步驟S50向製程腔室500載入基板W。基板載入步驟S50是藉助於第二移送機器人420從傳輸腔室400向製程腔室500載入基板W。Referring to FIG. 15 , the substrate unloading step S40 unloads the processed substrate W from the
閥關閉和門關閉步驟S60是閥624移動到關閉位置,門620移動到關閉位置。閥關閉和門關閉步驟S60在基板W運送到製程腔室500內部後,使閥624和門620移動到關閉位置。移動到閥624和門620的關閉位置的過程分別按閥打開步驟S20和門打開步驟S30的倒序執行。閥關閉和門關閉步驟S60完成後,再次執行電漿處理步驟S10。The valve closing and door closing step S60 is that the
在上述本發明的多樣實施例中,對在製程腔室500配備門組合件600,門組合件600在製程腔室500中驅動的方法進行了描述。但不限於此,門組合件600可配備於裝載閘腔室300、傳輸腔室400等多樣腔室。作為一個示例,門組合件600在形成有供基板進出的載入口的腔室均可應用。In the various embodiments of the present invention described above, the
以上的詳細描述是對本發明進行舉例。另外,前述內容顯示並描述了本發明的較佳實施形態,本發明可在多樣的其他組合、變更及環境下使用。即,可在本說明書中公開的發明的概念範圍、與前述公開內容均等的範圍及/或本行業的技術或知識範圍內進行變更或修訂。前述實施例描述了用於體現本發明技術思想所需的最佳狀態,也可進行本發明具體應用領域和用途所要求的多樣變更。因此,以上的發明內容並非要將本發明限定為公開的實施形態。另外,附帶的申請專利範圍應解釋為也包括其他實施形態。The above detailed description exemplifies the invention. In addition, the foregoing content shows and describes the preferred embodiments of the present invention, and the present invention can be used in various other combinations, changes, and environments. That is, changes or revisions may be made within the conceptual scope of the invention disclosed in this specification, the scope equivalent to the foregoing disclosure, and/or the technical or knowledge scope of the industry. The foregoing embodiments describe the best state required to embody the technical idea of the present invention, and various changes required by the specific application fields and uses of the present invention can also be made. Therefore, the above summary of the invention is not intended to limit the present invention to the disclosed embodiments. In addition, the accompanying patent claims should be construed to include other embodiments.
1:基板處理設備 2:第一方向 4:第二方向 20:設備前端模組 30:處理模組 200:載入埠 202:支撐部 220:移送框架 222:第一移送機器人 224:移送軌道 300:裝載閘腔室 400:傳輸腔室 420:第二移送機器人 500:製程腔室 520:處理室 540:電漿產生室 560:擴散室 580:排氣室 600:門組合件 620:門 621:通路 622:外殼 624:閥 626:閥驅動器 632:板 634:過濾器 700:控制器 5200:處理空間 5201:載入口 5220:外殼 5222:排氣孔 5240:支撐單元 5242:支撐板 5244:支撐軸 5260:排氣擋板 5262:排氣孔 5420:電漿腔室 5422:電漿產生空間 5424:氣體供應埠 5440:氣體供應單元 5460:電力接入單元 5462:天線 5464:電源 5620:擴散腔室 5622:電漿擴散空間 5640:擋板 5642:擋板孔 5820:排氣管線 5840:泄壓構件 9000:腔室 9200:門組合件 S10-S60:步驟 C:承載架 D1:直徑 W:基板 1:Substrate processing equipment 2: First direction 4:Second direction 20:Device front-end module 30: Processing module 200:Loading port 202:Support part 220:Transfer frame 222:The first transfer robot 224: Transfer track 300:Loading lock chamber 400:Transmission chamber 420: Second transfer robot 500: Process chamber 520:Processing room 540:Plasma generation chamber 560: Diffusion chamber 580:Exhaust chamber 600: Door assembly 620:door 621:Pathway 622: Shell 624: valve 626: Valve driver 632: Board 634:Filter 700:Controller 5200: processing space 5201:Loading port 5220: Shell 5222:Exhaust hole 5240:Support unit 5242:Support plate 5244:Support shaft 5260:Exhaust baffle 5262:Exhaust hole 5420: Plasma chamber 5422: Plasma generation space 5424:Gas supply port 5440:Gas supply unit 5460:Power access unit 5462:antenna 5464:Power supply 5620: Diffusion chamber 5622: Plasma diffusion space 5640:Baffle 5642:Baffle hole 5820:Exhaust line 5840: Pressure relief component 9000: Chamber 9200: Door assembly S10-S60: Steps C: Bearing frame D1: diameter W: substrate
圖1是示出門在普通製程腔室一側壁打開狀態的圖。 圖2是放大示出圖1的A部分的圖。 圖3是簡要示出本發明的基板處理設備的圖。 圖4是簡要示出圖3的基板處理設備的製程腔室中執行電漿處理製程的製程腔室的一實施例的圖。 圖5是簡要示出圖4所示一實施例的門組合件的圖。 圖6是簡要示出圖5的閥移動到打開位置時的氣流流動的圖。 圖7和圖8是簡要示出圖4所示另一實施例的門組合件的圖。 圖9是簡要示出圖4所示另一實施例的門組合件的圖。 圖10是簡要示出圖9的閥移動到打開位置時的氣流流動的圖。 圖11是本發明一實施例的驅動門組合件的方法的順序圖。 圖12是簡要示出圖11的電漿處理步驟的圖。 圖13是簡要示出圖11的閥打開步驟的圖。 圖14是簡要示出圖11的門打開步驟的圖。 圖15是簡要示出圖11的基板載出步驟的圖。 FIG. 1 is a diagram showing a state in which the door is opened on one side wall of a common process chamber. FIG. 2 is an enlarged view of part A of FIG. 1 . FIG. 3 is a diagram schematically showing the substrate processing apparatus of the present invention. 4 is a diagram schematically illustrating an embodiment of a process chamber for performing a plasma processing process in the process chamber of the substrate processing apparatus of FIG. 3 . FIG. 5 is a diagram schematically showing the door assembly of the embodiment shown in FIG. 4 . FIG. 6 is a diagram schematically showing the flow of air when the valve of FIG. 5 is moved to the open position. 7 and 8 are diagrams schematically showing the door assembly of another embodiment shown in FIG. 4 . FIG. 9 is a diagram schematically showing the door assembly of another embodiment shown in FIG. 4 . FIG. 10 is a diagram schematically showing the air flow when the valve of FIG. 9 is moved to the open position. FIG. 11 is a sequence diagram of a method of driving a door assembly according to an embodiment of the present invention. FIG. 12 is a diagram schematically showing the plasma processing steps of FIG. 11 . FIG. 13 is a diagram schematically showing the valve opening step of FIG. 11 . FIG. 14 is a diagram schematically showing the door opening step of FIG. 11 . FIG. 15 is a diagram schematically showing the substrate unloading step of FIG. 11 .
500:製程腔室 500: Process chamber
520:處理室 520:Processing room
540:電漿產生室 540:Plasma generation chamber
560:擴散室 560: Diffusion chamber
580:排氣室 580:Exhaust chamber
600:門組合件 600: Door assembly
700:控制器 700:Controller
5200:處理空間 5200: processing space
5201:載入口 5201:Loading port
5222:排氣孔 5222:Exhaust hole
5240:支撐單元 5240:Support unit
5242:支撐板 5242:Support plate
5244:支撐軸 5244:Support shaft
5260:排氣擋板 5260:Exhaust baffle
5262:排氣孔 5262:Exhaust hole
5420:電漿腔室 5420: Plasma chamber
5422:電漿產生空間 5422: Plasma generation space
5424:氣體供應埠 5424:Gas supply port
5440:氣體供應單元 5440:Gas supply unit
5460:電力接入單元 5460:Power access unit
5462:天線 5462:antenna
5464:電源 5464:Power supply
5620:擴散腔室 5620: Diffusion chamber
5622:電漿擴散空間 5622: Plasma diffusion space
5640:擋板 5640:Baffle
5642:擋板孔 5642:Baffle hole
5820:排氣管線 5820:Exhaust line
5840:泄壓構件 5840: Pressure relief component
D1:直徑 D1: diameter
W:基板 W: substrate
Claims (13)
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KR101099603B1 (en) * | 2009-07-13 | 2011-12-29 | 피에스케이 주식회사 | Chamber and substrate processing method using the same |
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