TWI828238B - Heating devices, CVD equipment and semiconductor processing methods - Google Patents

Abstract

The present invention provides a heating device for CVD equipment, including: an upper lamp module arranged above a reaction chamber and/or a lower lamp module below the reaction chamber; the upper lamp module and the lower lamp module include multiple An upper lamp array and a lower lamp array formed by two heating lamps; the substrate carrying platform and the substrate are heated through the upper lamp array and the lower lamp array; the heating lamp includes a tubular lamp body and two lamps located at both ends of the tubular lamp body. Electrode terminals, the electrode terminals in the upper lamp module and the lower lamp module are electrically connected upward and downward respectively; the tubular lamp body is provided with a filament extending along the tubular lamp body; the upper lamp array and the lower lamp The array can control the heating power in zones. The invention also includes a CVD equipment and a method of semiconductor manufacturing process. The invention can improve the thermal energy utilization rate of the heating device, and can accurately control the heating power of each heating lamp, prevent cold spots from occurring between adjacent heating lamps, and effectively ensure uniform temperature on the surface of the substrate.

Description

Heating devices, CVD equipment and semiconductor processing methods

The present invention relates to the field of semiconductor technology, and in particular to a heating device, CVD equipment and a semiconductor process processing method.

In the semiconductor manufacturing industry, chemical vapor deposition (CVD) is a well-known process for forming thin films of materials on substrates, such as silicon wafers. In the CVD process, gaseous molecules of the material to be deposited are supplied to the wafer to form a thin film of the material on the wafer through a chemical reaction. The resulting film may be polycrystalline, amorphous or epitaxial. Typically, the CVD process is performed at elevated temperatures to speed up chemical reactions and produce high-quality films. Some processes, such as epitaxial silicon deposition, operate at very high temperatures ( ).

During a CVD process, one or more substrates are placed on a substrate support within a reaction chamber (defined within a reactor). For example, the substrate may be a wafer and the substrate support may be a pedestal. The substrate and usually the carrier are heated to the required temperature. In a typical wafer processing step, reactive gases are passed over a heated wafer, resulting in chemical vapor deposition (CVD) of a thin layer of the desired material on the wafer. If the deposited layer has the same crystal structure as the underlying silicon wafer, it is called an epitaxial layer, sometimes also called a monocrystalline layer. Through subsequent processes, these deposited layers are made into integrated circuits, producing tens to thousands or even millions of integrated circuit devices, depending on the size of the wafer and the complexity of the circuit.

Various process parameters must be carefully controlled to ensure high-quality deposited layers produced in semiconductor processing. A critical parameter is the temperature of the wafer during each processing step of the wafer processing. For example, in the CVD process, because the deposition gas reacts and deposits on the wafer at a specific temperature, the wafer temperature determines the rate at which material is deposited on the wafer. If the temperature on the wafer surface changes, uneven deposition of the film occurs and the physical properties on the wafer will not be uniform. Moreover, in epitaxial deposition, even slight temperature inhomogeneities can cause crystal plane slip.

The object of the present invention is to provide a heating device, CVD equipment and method. The heating device of the present invention only provides radiant heat energy to the reaction chamber of the CVD equipment through a U-shaped heating lamp (no need to use other special-shaped lamps), simplifying the process of the heating device. Layout of upper and lower light arrays. The invention also effectively compensates for the cold spots between adjacent heating lamps by controlling the filament winding density of the heating lamp and the vertical arrangement of the heating lamp. The invention also independently controls the total power of each area of the upper and lower lamp arrays to achieve local control of the substrate temperature and effectively ensure uniform temperature on the substrate surface. Furthermore, the present invention also uses the upper and lower reflective screens to cooperate with the upper and lower lamp arrays to collect, reflect, and concentrate light toward the substrate carrying platform, thereby improving the thermal energy utilization rate of the heating device.

In order to achieve the above object, the present invention provides a heating device for CVD equipment. The reaction chamber of the CVD equipment includes a substrate carrying platform for carrying the substrate. The heating device includes: an upper lamp arranged above the reaction chamber. Downlight module below the module and/or reaction chamber;

The upper lamp module and the lower lamp module include an upper lamp array and a lower lamp array formed by a plurality of heating lamps; the substrate carrying platform and the substrate are heated by the upper lamp array and the lower lamp array;

The heating lamp includes a tubular lamp body and electrode terminals located at both ends of the tubular lamp body. The electrode terminals in the upper lamp module and the lower lamp module are electrically connected upward and downward respectively; the tubular lamp body is provided with The filament extends along the tubular lamp body; the upper lamp array and the lower lamp array can control the heating power in zones.

Optionally, the tubular lamp body includes two vertical heating sections and a horizontal heating section between the two vertical heating sections; the length direction of the horizontal heating section is the length direction of the heating lamp; the electric The extreme is located at one end of the vertical heating section; cold spots between adjacent heating lamps are compensated for by adjacent vertical heating sections.

Optionally, the winding density of the filaments in the vertical heating section is greater than the winding density of the filaments in the horizontal heating section.

Optionally, the length direction of the heating lamps in the upper lamp array and the length direction of the heating lamps in the lower lamp array are perpendicular to each other.

Optionally, the length direction of the heating lamps in the upper lamp array is the same as the process air flow direction in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to the process air flow direction; or, the length direction of the heating lamps in the upper lamp array is The length direction is perpendicular to the process air flow direction, and the length direction of the heating lamps in the lower lamp array is the same as the process air flow direction in the reaction chamber.

Optionally, the upper lamp module and the lower lamp module also respectively include an upper reflective screen and a lower reflective screen corresponding to the position of the substrate carrying platform, and the upper and lower reflective screens completely cover the substrate carrying platform; the upper lamp array The lower light arrays are respectively installed at the bottom of the upper reflective screen and the top of the lower reflective screen; the light emitted back to the substrate carrying platform is collected through the upper and lower reflective screens and reflected back to the substrate carrying platform.

Optionally, the areas on the bottom surface of the upper reflective screen and the top surface of the lower reflective screen corresponding to the substrate bearing platform are diffuse reflection areas, and other areas on the bottom surface of the upper reflective screen and the top surface of the lower reflective screen are specular reflection areas.

Optionally, multiple fluid channels are provided inside the upper and lower reflective screens, and the temperatures of the upper and lower reflective screens are controlled by injecting cooling fluid into the gas channels.

Optionally, the upper reflective screen and the lower reflective screen are provided with multiple grooves, and the temperatures of the upper and lower reflective screens are controlled by injecting cooling gas into the grooves.

Optionally, the upper reflective screen and the lower reflective screen are also provided with pairs of insertion ports, and the grooves may be provided between the pairs of insertion ports.

Optionally, the bottom edge of the upper reflective screen is provided with a number of arcuate surfaces arched upward toward the substrate, and the heating lamps at the bottom edge of the upper reflective screen are respectively arranged in the corresponding arcuate surfaces; the bottom edge of the lower reflective screen There are a number of arc-shaped surfaces formed by arching downwards toward the substrate, and the heating lamps at the bottom edge of the lower reflective screen are respectively arranged in the corresponding arc-shaped surfaces; through the arc-shaped surfaces, the focusing towards the substrate bearing platform is achieved. Light.

Optionally, every two adjacent heating lamps in the upper lamp array and the lower lamp array are treated as a group, and the power of each group of heating lamps is independently controlled.

Optionally, the upper lamp array is divided into a middle area and edge areas located on both sides of the middle area; the length of the middle area heating lamp is greater than the length of the edge area heating lamp.

Optionally, there is at least one row of heating lamps in the lower lamp array, and the length of the heating lamps in the row is shorter than the length of other heating lamps.

The invention also provides a CVD equipment, including:

reaction chamber;

A rotatable substrate carrying platform provided in the reaction chamber for fixing the substrate;

The heating device according to the invention is arranged above the reaction chamber and/or below the reaction chamber.

The present invention also provides a method for semiconductor manufacturing process, which is implemented using the CVD equipment of the present invention and includes:

Place the substrate on the substrate carrying table, start the heating device of the CVD equipment, and perform the substrate process;

The power of the heating lamps is independently adjusted to achieve uniform temperature distribution on the substrate surface.

Optionally, the semiconductor process processing method also includes:

The upper lamp array and the lower lamp array are respectively divided into several areas, and the areas contain at least one heating lamp; the total power of each area is independently controlled.

Optionally, the area includes a middle area and an edge area, and the edge area has independent temperature control relative to the middle area.

Optionally, in the upper lamp array, the total power of the area decreases along the process air flow direction.

Optionally, the lower reflective screen has a through hole, and the rotation drive shaft of the substrate carrying platform passes vertically through the through hole and is fixedly connected to the bottom of the substrate carrying platform; in the lower light array, the power of the heating lamps around the through hole is greater than The power of other heat lamps.

Compared with the prior art, the beneficial effects of the present invention are:

1) The heating device of the present invention does not need to use other special-shaped lamps to provide radiant heat energy into the reaction chamber of the CVD equipment, simplifying the layout of the upper and lower lamp arrays in the heating device;

2) Compared with long lamps spanning the diameter of the substrate carrying platform, the present invention uses multiple heating lamps with shorter lengths to heat the substrate carrying platform, and achieves local control of the substrate surface temperature by independently controlling the power of each heating lamp, solving the problem The problem of uneven temperature in specific areas of the substrate surface; at the same time, the heating lamp of the present invention has a shorter filament than a long lamp, so the filament in the heating lamp is not easy to sag, which increases the service life of the heating lamp;

3) The present invention effectively compensates for the cold spots between adjacent heating lamps by making the filament winding density of the vertical heating section of the heating lamp greater than that of the horizontal heating section; and due to the projected area of the vertical heating section on the substrate Small, the vertical heating section can also achieve local compensation of the substrate temperature within a small range;

4) The present invention divides the upper and lower lamp arrays into multiple areas (groups), and independently controls the total power of each area (group) to achieve local control of the substrate temperature, effectively ensure the uniform temperature of the substrate, and improve the efficiency of the substrate. Chip yield;

5) The upper and lower reflective screens of the present invention are better used as substrate bearing platforms through the diffuse reflection area corresponding to the substrate bearing platform, the specular reflection area located on the periphery of the diffuse reflection area, and the arc section facing the substrate bearing platform. Collects, reflects and concentrates light, effectively improving the thermal energy utilization of the heating device;

6) The reaction chamber of the present invention is equipped with a reflective screen to effectively prevent heat energy loss in the reaction chamber;

7) The upper and lower reflective screens of the present invention are provided with fluid channels and grooves for injecting cooling gas or liquid, which can effectively control the temperature of the upper and lower reflective screens and prevent safety accidents caused by excessive temperatures of the upper and lower reflective screens. .

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the technical field to which this case belongs without making any creative efforts shall fall within the scope of protection of the present invention.

The device/component of the present invention can be mainly applied to CVD equipment, especially the substrate holder (wafer holder, sometimes also called "substrate tray" in the industry) used to fix the substrate during the deposition process. CVD equipment that rotates at a high speed to improve deposition quality, such as MOCVD equipment. To clarify, the CVD equipment here should be understood broadly, including epitaxial growth equipment.

The CVD apparatus 10 shown in FIG. 1 includes a horizontal flow-shaped reaction chamber 112 formed of a material that is transparent to thermal energy. The process gas flows into the reaction chamber 112 from the inlet 140 and flows out from the outlet 142 in the direction shown by the arrow. The reaction chamber 112 has a top wall at the top end, a bottom wall at the bottom end, and side walls extending between the top wall and the bottom wall. Several heating lamps 130 are provided in the upper heating chamber 136 /lower heating chamber 138 above/below the reaction chamber for providing heat energy to the reaction chamber 112 . A substrate support structure 120 is provided in the reaction chamber. The substrate support structure 120 includes: a substrate carrying platform 110 , a bracket 122 , a rotation drive shaft 124 and a sealing tube 126 .

The substrate carrying platform 110 is disposed in the reaction chamber and is used to carry the substrate W. The bracket 122 is disposed in the reaction chamber and located below the substrate carrying platform 110 for supporting the substrate carrying platform 110 . Bracket 122 may be made of non-metallic materials to reduce the risk of contamination. The bracket 122 is installed on the top of the rotary drive shaft 124 . The bottom of the rotary drive shaft 124 runs vertically downward through the bottom wall of the reaction chamber 112 and the lower heating chamber 138 and is located outside the CVD equipment 10 . The sealing tube 126 is sleeved on the outside of the rotating drive shaft 124, and a sealing device (not shown in the figure) provided between the sealing tube 126 and the rotating driving shaft 124 is used to isolate the reaction chamber environment from the atmospheric environment. The rotating driving shaft 124, the bracket 122, and the substrate carrying platform 110 jointly rotate around the central axis of the rotating driving shaft 124 during substrate processing. The rotary drive shaft 124 may be driven by an external motor (not shown).

During substrate processing, the substrate W reaches a required high temperature through the heating lamps 130 of the upper heating chamber 136 and the lower heating chamber 138 . However, due to the asymmetry of the chamber environment and the influence of gas flow, even if a long symmetrical light source is used in this arrangement, the radiation received by the substrate W will be uneven, thereby causing its temperature distribution. Uneven, and the area adjustment of the long discrete light source is limited, which is limited by the overall length of the long light source, and cannot accurately compensate for small-scale temperature unevenness on the substrate W. During substrate processing, the substrate W and the substrate carrying platform 110 can absorb part of the heat of the heating lamp 130, and the other part of the heat of the heating lamp 130 is lost in the surrounding environment through convection and conduction (such as through the connection between the reaction chamber wall and the atmospheric environment). Heat loss caused by heat transfer), the heat loss in different surrounding environments is different, which easily makes it difficult to accurately control the temperature in the reaction chamber. On the other hand, the process gas is not fully heated when it first enters the reaction chamber 112, and "cold spots" inevitably exist around the rotating drive shaft 124, which may easily cause uneven temperature distribution in the reaction chamber. How to solve the above problems is the key to ensuring uniform temperature of the substrate.

Embodiment 1

The present invention provides a heating device, as shown in Figure 2, for CVD equipment 20. The reaction chamber of the CVD equipment 20 contains a substrate carrying platform 260 for carrying the substrate W. The substrate carrying platform is driven by a rotating drive shaft. 260 rotates about the central axis of the rotating drive shaft 224 .

The heating device includes: an upper lamp module 210 arranged above the reaction chamber and/or a lower lamp module 220 below the reaction chamber.

The upper lamp module 210 includes an upper lamp array and an upper reflective screen 212. The upper lamp array is installed at the bottom of the upper reflective screen. The lower lamp module 220 includes a lower lamp array and a lower reflective screen 222. The lower lamp array is installed on the top of the lower reflective screen.

The upper and lower light arrays include a plurality of heating lamps 230 . By using the upper lamp array and the lower lamp array to heat the substrate carrying platform 260 and the substrate W, the power of each heating lamp 230 can be independently controlled, and the multiple heating lamps of the upper lamp array and the lower array can be partitioned as needed. , the heating lamps in the same area are under the same control, and the heating cold spots between two adjacent heating lamps 230 will be compensated by the side walls of the heating lamps. Moreover, the two ends of the heating lamps of the upper lamp array are electrically connected upwards, and the two ends of the heating lamps of the lower lamp array are electrically connected downwards, which can avoid damage to the electrical connection components caused by the high temperature generated by the heating inside. In this way, the upper lamp array is realized The finer zoning control of the downlight array also improves the life and stability of each lamp tube.

The heating lamp 230 includes a tubular lamp body, two closed ends 235 and two electrode ends 236 . The tubular lamp body is provided with a filament 234 extending along the tubular lamp body. As shown in Figure 3, the heating lamp 230 in this embodiment has a U-shaped structure, including two opposite vertical heating sections 231, and a horizontal heating section 232 connected between the two vertical heating sections 231. , the length direction of the horizontal heating section 232 is the length direction of the heating lamp 230 . In this embodiment, the horizontal heating section 232 of the heating lamp 230 has a linear structure and is parallel to the horizontal plane. The vertical heating section 231 is perpendicular to the horizontal plane. The two closed ends 235 are respectively used to seal both ends of the tubular lamp body. The two electrode terminals 236 are respectively fixed on the two closed ends 235 , and the two closed ends 235 are respectively passed through the two ends of the filament 234 to electrically connect the two electrode terminals 236 . The electrode terminals 236 in the upper lamp module 210 and the lower lamp module 220 are embedded in the upper reflective screen 212 and the lower reflective screen 222 facing upward and downward respectively, and are connected to the circuits installed on the upper reflective screen 212 and the lower reflective screen 222 Make electrical connections. The electrode end is installed in the reflective screen, which can not only prevent the electrode end from being damaged by being exposed to the heating space, but also enable the control of the heating lamp in a smaller unit. At the same time, by controlling the temperature of the upper reflective screen 212 and the lower reflective screen 222, it can avoid heating due to The resulting high temperature destroys the electrode tip 236 .

It should be emphasized that the present invention does not limit the vertical heating section 231 to be strictly perpendicular to the horizontal plane. The function of the vertical heating section is to heat in the vertical direction. As shown in Figure 3A, it can also be aligned with the vertical direction. Angle, as long as it can achieve temperature compensation of the surrounding area in the vertical direction. The present invention does not limit the shape of the horizontal heating section 232. The function of the horizontal heating section is to radiate heat energy toward the plane where the wafer is located. As shown in Figure 3B and Figure 3C, the horizontal heating section 232 can be wavy, arc-shaped, etc. , as long as it can be heated in the horizontal direction. In a preferred embodiment, the horizontal heating sections 232 of the upper lamp array are all located on the first plane, and the horizontal heating sections 232 of the lower lamp array are all located on the second plane.

Figure 3D and Figure 3E respectively show that in other embodiments, the arrangement of the heating lamps is not necessarily parallel to each other. The heating lamps can also be arranged in a pentagon or annular shape. As shown in the figure, a linear, Bottom view of the upper lamp array with arc-shaped horizontal heating sections 232 arranged. In these embodiments, several heating lamps can be divided into the same heating zone according to actual needs, and the power of the same heating zone can be controlled in the same way to maintain the difference in heating power between different heating zones, for example, considering the deposition effect on the wafer surface. Measure or simulate the air flow distribution, and then plan the division of heating zones and control strategies.

As shown in FIG. 3 , in this embodiment, the winding density of the filament 234 in the vertical heating section 231 is greater than the winding density of the filament 234 in the horizontal heating section 232 . Therefore, the cold spots formed by the gaps between adjacent heating lamps 230 can be compensated by the adjacent vertical heating sections 231 to solve the problem of uneven heating of the substrate surface caused by zoned temperature control. Moreover, since the projected area of the vertical heating section 231 on the substrate W is small and its temperature influence range is small, the vertical heating section 231 can also achieve local compensation of the substrate temperature within a smaller range.

The length direction of the heating lamps 230 in the upper lamp array and the length direction of the heating lamps 230 in the lower lamp array are perpendicular to each other. They compensate each other for the radiation difference caused by arranging the heating lamps along one direction in one side of the array. This can be done during the processing of the substrate W. , achieving a substantially uniform temperature across the entire substrate W.

In this embodiment, as shown in FIG. 4 , the length direction of the heating lamps 230 in the upper lamp array is perpendicular to the direction of the process air flow. As shown in FIG. 5 , the length direction of the heating lamps 230 in the lower lamp array is the same as the direction of the process gas flow in the reaction chamber 22 . This arrangement can not only progressively control the temperature of the process gas after entering the chamber to achieve uniform substrate temperature, but also prevent turbulence in the process gas flow.

Each row and column of the upper lamp array and the lower lamp array includes a plurality of heating lamps 230 , and the length of the heating lamps 230 is shorter than the diameter of the substrate carrying platform 260 . Compared with long lamps spanning the diameter of the substrate carrying platform, the heating lamps 230 of the present invention are shorter in length, so local control of the substrate surface temperature can be achieved by independently controlling the power of each heating lamp 230 . By adjusting the temperature of a small specific area on the substrate W without affecting the temperature of adjacent areas, the problem of uneven temperature in the specific area of the substrate is solved and the control accuracy of the substrate temperature is improved. At the same time, the heating lamp 230 has a shorter filament 234 than a long lamp, so the filament 234 in the heating lamp 230 is not easy to sag, which increases the service life of the heating lamp 230.

As shown in FIG. 4 , in this embodiment, the upper lamp array includes 11 rows and 4 columns of heating lamps 230 , and the lengths of the heating lamps 230 of the upper lamp array are basically the same.

As shown in Figure 5, the lower lamp array includes 13 columns of heating lamps 230. The lower reflective screen 222 has a through hole 240, and the rotation driving shaft 224 of the substrate carrying platform 260 vertically passes through the through hole 240 and is fixedly connected to the bottom of the substrate carrying platform. The seventh row of heating lamps 230 in the middle has to avoid the rotation drive shaft 224 , so the length of the heating lamps 230 in this row is shorter than the lengths of the other heating lamps 230 .

Due to the inevitable "cold spots" around the rotating drive shaft 224. FIG. 5A is a partial schematic diagram within the range indicated by the dotted circle in FIG. 5 . As shown in FIG. 5A , in order to compensate for the “cold spot” around the rotating drive shaft 224 , the power of the six heating lamps 230 around the through hole 240 in the lower lamp array is greater than the power of the other heating lamps 230 in the lower lamp array.

In the present invention, the upper lamp array and the lower lamp array are divided into several areas respectively, and the areas include at least one heating lamp 230. By independently adjusting the total power in each area, local control of the substrate surface temperature is achieved. The length and number of the heating lamps 230 in the area determine the range of temperature control of the substrate W.

A dotted box in Figures 6 and 7 represents a region. In this embodiment, each area of the upper lamp array includes two or one heating lamp 230, and each area of the lower lamp array includes two or four heating lamps 230.

Letters A~N in Figure 6 respectively represent the corresponding areas of the upper light array with the same total power. Due to the lower temperature of the process airflow near the air inlet, the total power in the area near the air inlet of the upper light array is higher than that in other areas. Alternatively, the total power of the area in the upper lamp array decreases along the direction of the process air flow.

Letters a~m in Figure 7 respectively represent the corresponding areas of the lower light array with the same total power. As shown in Figures 6 and 7, the projection of the virtual first symmetry axis on the substrate carrying platform 260 passes through the center of the substrate carrying platform, and the extending direction of the first symmetry axis o-o' is the process air flow direction. In this embodiment, each area of the upper lamp array and the lower lamp array is arranged symmetrically along the first symmetry axis, and the total power of the symmetrical areas is the same.

As shown in FIG. 2 , the upper reflective screen 212 and the lower reflective screen 222 correspond to the position of the substrate carrying platform 260 and completely cover the substrate carrying platform 260 (the substrate carrying platform 260 does not extend from the edges of the upper reflective screen 212 and the lower reflective screen 222 extend). The upper reflective screen 212 and the lower reflective screen 222 collect the light emitted back toward the substrate carrying platform 260 and reflect it back to the substrate carrying platform 260, thereby improving the heat energy utilization rate of the heating lamp 230. In this embodiment, the bottom surface of the upper reflective screen and the top surface of the lower reflective screen are both provided with metal coatings for reflecting light. In this embodiment, the metal plating layer is made of gold.

As shown in Figure 8, the area on the bottom surface of the upper reflective screen corresponding to the substrate carrying platform 260 is a diffuse reflection area (inside the virtual circle in Figure 8), and other areas on the bottom surface of the upper reflective screen are specular reflection areas (outside the virtual circle in Figure 8 ). As shown in Figure 9, the areas corresponding to the bottom surface of the upper reflective screen, the top surface of the lower reflective screen and the substrate carrying platform 260 are diffuse reflection areas (inside the dotted circle in Figure 9), and other areas on the top surface of the lower reflective screen are specular reflection areas ( Outside the virtual circle in Figure 9).

The surface roughness of the diffuse reflection area is uniformly distributed. The diffuse reflection area ensures uniform distribution of light reflected toward the substrate W. The light reflectivity is increased through the specular reflection area to prevent edge heat loss, and the light beyond the edge of the substrate is directionally reflected back to the substrate area to ensure that the temperature in the reaction chamber reaches the set requirements.

The bottom edge of the upper reflective screen is provided with a plurality of arcuate surfaces 250 that are arched upward and face the substrate W. The heating lamps 230 at the bottom edge of the upper reflective screen are respectively disposed in the corresponding arcuate surfaces 250 . The bottom edge of the lower reflective screen is provided with a plurality of arcuate surfaces 250 formed by arching downward and facing the substrate W. The heating lamps 230 at the bottom edge of the lower reflective screen are respectively disposed in the corresponding arcuate surfaces 250 . The arc-shaped surface 250 can collect light and heat toward the substrate carrying platform 260 .

In this embodiment, as shown in Figures 2 and 10, the upper reflective screen 212 is provided with four arc-shaped surfaces 250. The length direction of the arc-shaped surfaces 250 is the same as the length direction of the U-shaped lamp (perpendicular to the direction of the process air flow). , the heating lamps 230 of the first, second, tenth, and eleventh rows of the lamp array are respectively installed in the four arcuate surfaces 250, and one arcuate surface 250 corresponds to one row of heating lamps 230. It should be emphasized that a curved surface 250 may include a specular reflection area and a diffuse reflection area.

As shown in Figure 11, the lower reflective screen 222 is also provided with four arc-shaped surfaces 250. The length direction of the arc-shaped surface 250 is the same as the length direction of the U-shaped lamp (the same as the process air flow direction). Within the four arc-shaped surfaces 250 The heating lamps 230 in the first, second, twelfth and thirteenth rows of the lower lamp array are installed respectively, and one arc surface 250 corresponds to one row of heating lamps 230.

A portion of the upper reflective screen 212 is shown in FIG. 12 (the bottom of this portion is provided with a curved surface). As shown in Figure 12, the upper reflective screen 212 is also provided with a plurality of fluid channels 2121. By circulating cooling fluid in the fluid channels 2121, the temperatures of the upper reflective screen 212 and the lower reflective screen 222 are controlled to prevent the upper reflective screen from 212. The temperature of the lower reflective screen 222 is too high and a safety accident occurs. In this embodiment, the fluid is preferably liquid. The inside of the lower reflective screen is also provided with a fluid channel 2121 that is also used for temperature control.

As shown in Figure 12, a plurality of grooves 2122 are formed on the top surface of the upper reflective screen. By passing cooling gas above the upper reflective screen, the cooling gas flows along the grooves 2122 to control the temperature of the upper reflective screen. The bottom surface of the lower reflective screen is also provided with a groove 2122 which is also used for air cooling. Figure 12 also shows the plug-in interface 2361 of the electrode end 236. A groove can also be provided between a pair of plug-in interfaces 2361 corresponding to a heating lamp 230, so that the cooling gas purged on the back of the reflective screen can pass through the plug-in interface 2361. The gap flows into the groove on the front of the reflective screen, helping to control the temperature of the entire reflective screen.

Embodiment 2

In this embodiment, as shown in FIG. 13 , the length direction of the heating lamps 230 in the upper lamp array is the same as the direction of the process gas flow in the reaction chamber. As shown in FIG. 14 , the length direction of the heating lamps 230 in the lower lamp array is perpendicular to the process air flow direction. This arrangement can also uniformly heat the process airflow in the reaction chamber, achieve uniform substrate temperature, and prevent turbulence in the process airflow.

In this embodiment, as shown in FIG. 13 , along the direction of the process air flow, the upper lamp array is divided into a middle area and edge areas located on both sides of the middle area. In the upper lamp array, the length of the heating lamp 230 in the middle area is greater than the length of the heating lamp 230 in the edge area. By independently controlling the temperature of the edge area and the middle area, local control of the surface temperature of the substrate is achieved.

As shown in Figure 14, along the direction of the process air flow, the lower light array is divided into a middle area and edge areas located on both sides of the middle area. In the lower lamp array, the heating lamps 230 in the middle area and the heating lamps 230 around the rotating drive shaft 224 have a first length, and the remaining heating lamps 230 have a second length, and the first length is greater than the second length. In the lower lamp array, not only the edge area and the middle area are independently temperature controlled, but also the heating lamps 230 around the rotating drive shaft 224 are independently temperature controlled.

The present invention also provides a CVD equipment 20, as shown in Figure 2, including:

reaction chamber 22;

A rotatable substrate carrying platform 260 is provided in the reaction chamber for fixing the substrate W;

The heating device according to the invention is arranged above the reaction chamber and/or below the reaction chamber.

The inner wall of the reaction chamber 22 is fixed with a reflective screen, and the surface of the reflective screen is provided with a metal coating. The metal coating prevents heat loss caused by heat transfer between the reaction chamber wall and the atmospheric environment. In this embodiment, the metal coating is made of gold.

The present invention also provides a semiconductor process processing method, which is implemented using the CVD equipment 20 of the present invention. As shown in Figure 15, the method includes:

Place the substrate W on the substrate carrying platform 260, start the heating device of the CVD equipment 20, and perform the substrate process;

The power of the heating lamp 230 is independently adjusted to achieve uniform temperature distribution on the substrate surface.

In one embodiment of the present invention, the upper lamp array and the lower lamp array are respectively divided into several areas, and the areas contain at least one heating lamp 230; the total power of each area is independently controlled.

In another embodiment of the present invention, the area includes a middle area and an edge area, and the edge area has independent temperature control relative to the middle area.

In another embodiment of the present invention, along the process air flow direction, the total power of the area of the upper lamp array decreases. In the lower lamp array, the power of the heating lamps 230 around the rotating drive shaft 224 is greater than the power of other heating lamps 230 .

The heating device of the present invention only provides radiant heat energy to the reaction chamber of the CVD equipment 20 through the heating lamp 230 (without using other special-shaped lamps). The layout of the upper lamp array and the lower lamp array can not only achieve uniform substrate temperature, but also prevent turbulence in the process air flow.

The present invention realizes local control of the surface temperature of the substrate by independently controlling the power of the heating lamp 230 according to regions (groups), and solves the problem of uneven temperature in specific areas of the substrate surface.

The present invention effectively compensates for the cold spots formed in the gaps between adjacent heating lamps 230 by making the filament winding density of the vertical heating section 231 of the heating lamp greater than that of the horizontal heating section 232 .

The upper reflective screen 212 and the lower reflective screen 222 of the present invention are better achieved through the diffuse reflection area corresponding to the substrate carrying platform 260, the specular reflection area located on the outer periphery of the diffuse reflection area, and the arc section facing the substrate carrying platform 260. The substrate carrying platform 260 collects, reflects, and concentrates light, effectively improving the thermal energy utilization rate of the heating device. Moreover, cooling gas channels are provided in the upper reflective screen 212 and the lower reflective screen 222, which can effectively control the temperatures of the upper reflective screen 212 and the lower reflective screen 222 to prevent safety accidents.

The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Anyone with ordinary knowledge in the technical field to which this case belongs can easily think of various equivalents within the technical scope disclosed in the present invention. modifications or substitutions, these modifications or substitutions shall be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.

10:CVD equipment 110:Substrate carrying platform 112:Reaction room 120:Substrate support structure 122:Bracket 124: Rotary drive shaft 126:Sealed tube 130:Heating lamp 136: Upper heating chamber 138: Lower heating chamber 140:Entrance 142:Export 210: lighting module 212: Upper reflective screen 2121: Fluid channel 2122: Groove 2361:Plug interface 22:Reaction chamber 220: Lower light module 222: Lower reflective screen 224: Rotary drive shaft 230:Heating lamp 231: Vertical heating section 232: Horizontal heating section 234:Filament 235: closed end 236:Electrode terminal 240:Through hole 250: Arc surface 260:Substrate carrying platform W: substrate

In order to explain the technical solution of the present invention more clearly, the drawings required for the description will be briefly introduced below. Obviously, the drawings in the following description are an embodiment of the present invention. Generally speaking, knowledgeable people can also obtain other drawings based on these drawings without putting in any creative work: Figure 1 is a schematic diagram of a CVD equipment; Figure 2 is a schematic diagram of the CVD equipment of the present invention; Figure 3 is a schematic diagram of the heating lamp in Embodiment 1; Figure 3A is a schematic diagram of a heating lamp with an inclined vertical heating section; Figures 3B and 3C are schematic diagrams of heating lamps with curved and arc-shaped horizontal heating sections respectively; Figure 3D and Figure 3E are respectively the bottom view of the upper lamp array using curved and arc-shaped horizontal heating sections; Figure 4 is a bottom view of the upper light module in Embodiment 1; Figure 5 is a top view of the lower light module in Embodiment 1; Figure 5A is a partial schematic diagram within the dashed circle in Figure 5; Figure 6 is a schematic diagram of the area division of the upper light array in Embodiment 1; Figure 7 is a schematic diagram of the area division of the lower light array in Embodiment 1; Figure 8 is a schematic diagram of the specular reflection area and diffuse reflection area of the upper reflective screen in Embodiment 1; Figure 9 is a schematic diagram of the specular reflection area and diffuse reflection area of the lower reflective screen in Embodiment 1; Figure 10 is a schematic diagram of the arc section of the upper reflective screen in Embodiment 1; Figure 11 is a schematic diagram of the arc section of the lower reflective screen in Embodiment 1; Figure 12 is a schematic diagram of the partial structure of the upper reflective screen in Embodiment 1; Figure 13 is a bottom view of the upper light module in Embodiment 2; Figure 14 is a bottom view of the upper light module in Embodiment 2; FIG. 15 is a flow chart of the semiconductor manufacturing process of the present invention.

20:CVD equipment

210: lighting module

212: Upper reflective screen

22:Reaction chamber

220: Lower light module

222: Lower reflective screen

224: Rotary drive shaft

230:Heating lamp

250: Arc surface

260:Substrate carrying platform

W: substrate

Claims (20)

A heating device for a CVD equipment. A reaction chamber of the CVD equipment includes a substrate carrying platform for carrying a substrate. The heating device includes: an upper lamp module arranged above the reaction chamber. and/or a lower lamp module below the reaction chamber; the upper lamp module and the lower lamp module include an upper lamp array and a lower lamp array formed by a plurality of heating lamps; through the upper lamp array and the lower lamp The array heats the substrate carrier and the substrate; the heating lamp includes a tubular lamp body and an electrode end respectively located at both ends of the tubular lamp body, and the tubular lamp bodies in the upper lamp module and the lower lamp module Both ends are bent upward and downward respectively, and the electrode terminals in the upper lamp module and the lower lamp module are electrically connected upward and downward respectively; the tubular lamp body is provided with a filament extending along the tubular lamp body. ; The upper lamp array and the lower lamp array can control the heating power in zones. The heating device according to claim 1, wherein the tubular lamp body includes two vertical heating sections and a horizontal heating section between the two vertical heating sections; the length direction of the horizontal heating section is the heating lamp length direction; the electrode end is located at one end of the vertical heating section; the cold spots between the adjacent heating lamps are compensated by the adjacent vertical heating sections. The heating device according to claim 2, wherein the winding density of the filament in the vertical heating section is greater than the winding density of the filament in the horizontal heating section. The heating device according to claim 2, wherein the length direction of the heating lamp in the upper lamp array and the length direction of the heating lamp in the lower lamp array are perpendicular to each other. The heating device of claim 4, wherein the length direction of the heating lamps in the upper lamp array is the same as the direction of the process gas flow in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to The direction of the process air flow; or, the vertical direction of the length of the heating lamp in the upper lamp array Straight to the direction of the process air flow, and the length direction of the heating lamp in the lower lamp array is the same as the direction of the process air flow in the reaction chamber. The heating device according to claim 1, wherein the upper lamp module and the lower lamp module also respectively include an upper reflective screen and a lower reflective screen corresponding to the position of the substrate carrying platform. The upper and lower reflective screens The upper light array and the lower light array are respectively installed at the bottom of the upper reflective screen and the top of the lower reflective screen; the upper and lower reflective screens are used to collect the light emitted back to the substrate carrying platform. light and reflects it back to the substrate carrier. The heating device according to claim 6, wherein the area corresponding to the bottom surface of the upper reflective screen, the top surface of the lower reflective screen and the substrate carrying platform is a diffuse reflection area, and the bottom surface of the upper reflective screen and the top surface of the lower reflective screen The other areas are specular reflection areas. The heating device according to claim 6, wherein a plurality of fluid channels are provided inside the upper and lower reflective screens, and the temperature of the upper and lower reflective screens is controlled by injecting cooling fluid into the fluid channels. The heating device according to claim 6, wherein the upper reflective screen and the lower reflective screen are provided with a plurality of grooves, and the temperature of the upper and lower reflective screens is controlled by injecting cooling gas into the grooves. The heating device according to claim 9, wherein the upper reflective screen and the lower reflective screen are also provided with pairs of plug-in ports, and the groove can be provided between the pairs of plug-in ports. The heating device as claimed in claim 6, wherein the bottom edge of the upper reflective screen is provided with a number of arcuate surfaces that are upwardly arched toward the substrate, and the heating lamps at the bottom edge of the upper reflective screen are respectively arranged at corresponding In the arc-shaped surface, the bottom edge of the lower reflective screen is provided with a plurality of arc-shaped surfaces that are arched downward toward the substrate, and the heating lamps at the bottom edge of the lower reflective screen are respectively arranged on the corresponding arc-shaped surfaces. in; focusing light on the substrate carrying platform is achieved through the arc-shaped surface. The heating device as claimed in claim 1, wherein every two adjacent heating lamps in the upper lamp array and the lower lamp array are grouped together, and the power of each group of heating lamps is independently controlled. The heating device as claimed in claim 1, wherein the upper lamp array is divided into a middle area and an edge area located on both sides of the middle area; the length of the heating lamp in the middle area is longer than that of the edge area. length. The heating device as claimed in claim 1, wherein there is at least one row of heating lamps in the lower lamp array, and the length of the heating lamps in the row is shorter than the length of the other heating lamps. A CVD equipment, which includes: a reaction chamber; a rotatable substrate carrying platform disposed in the reaction chamber for fixing a substrate; and as required, arranged above the reaction chamber and/or below the reaction chamber The heating device according to any one of items 1 to 14. A method of semiconductor process processing, implemented using a CVD equipment as described in claim 15, which includes: placing a substrate on a substrate carrying platform, starting a heating device of the CVD equipment, and performing the substrate Process processing of the wafer; independently adjust the power of a heating lamp to achieve uniform temperature distribution on the surface of the substrate. The method for processing a semiconductor process as described in claim 16, further comprising: dividing an upper lamp array and a lower lamp array into several areas, each area containing at least one heating lamp; and independently controlling the total power of each area. power. The method of semiconductor processing according to claim 16, wherein the area includes a middle area and an edge area, and the edge area is independently temperature-controlled relative to the middle area. The method of semiconductor processing according to claim 16, wherein the total power of the area in the upper lamp array decreases along the direction of the process air flow. The method of semiconductor processing as described in claim 16, wherein the lower reflective screen has a through hole, and the rotation drive shaft of a substrate carrying platform vertically passes through the through hole and is fixedly connected to the bottom of the substrate carrying platform; In the lamp array, the power of the heating lamps around the through hole is greater than the power of other heating lamps.

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