TWI824422B - Prepreg manufacturing method, prepreg, laminated board, printed wiring board and semiconductor package - Google Patents
Prepreg manufacturing method, prepreg, laminated board, printed wiring board and semiconductor package Download PDFInfo
- Publication number
- TWI824422B TWI824422B TW111106977A TW111106977A TWI824422B TW I824422 B TWI824422 B TW I824422B TW 111106977 A TW111106977 A TW 111106977A TW 111106977 A TW111106977 A TW 111106977A TW I824422 B TWI824422 B TW I824422B
- Authority
- TW
- Taiwan
- Prior art keywords
- prepreg
- group
- epoxy resin
- resin composition
- thermosetting resin
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 102
- 239000011342 resin composition Substances 0.000 claims abstract description 98
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 90
- 239000002243 precursor Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000008859 change Effects 0.000 claims abstract description 36
- -1 maleimide compound Chemical class 0.000 claims description 175
- 239000003822 epoxy resin Substances 0.000 claims description 128
- 229920000647 polyepoxide Polymers 0.000 claims description 128
- 125000004432 carbon atom Chemical group C* 0.000 claims description 67
- 150000001875 compounds Chemical class 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 239000011888 foil Substances 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 38
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- 239000007822 coupling agent Substances 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
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- 238000001816 cooling Methods 0.000 claims description 24
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 22
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 22
- 239000002966 varnish Substances 0.000 claims description 19
- 229920002554 vinyl polymer Polymers 0.000 claims description 19
- 229920006026 co-polymeric resin Polymers 0.000 claims description 18
- 239000011889 copper foil Substances 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 16
- 239000004305 biphenyl Substances 0.000 claims description 15
- 235000010290 biphenyl Nutrition 0.000 claims description 15
- 229930003836 cresol Natural products 0.000 claims description 14
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 13
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 12
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- 125000001424 substituent group Chemical group 0.000 claims description 12
- 125000001931 aliphatic group Chemical group 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
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- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 8
- 125000005843 halogen group Chemical group 0.000 claims description 8
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
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- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 3
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- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims 1
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- 125000003277 amino group Chemical group 0.000 description 20
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- 229910003475 inorganic filler Inorganic materials 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 15
- 150000003839 salts Chemical class 0.000 description 15
- 125000002947 alkylene group Chemical group 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 13
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- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
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- 239000011574 phosphorus Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
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- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 11
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
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- 229910019142 PO4 Inorganic materials 0.000 description 10
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- 235000021317 phosphate Nutrition 0.000 description 10
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 239000000654 additive Substances 0.000 description 9
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- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 8
- 239000004615 ingredient Substances 0.000 description 8
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 8
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 8
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 7
- 239000000047 product Substances 0.000 description 7
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- 229910001870 ammonium persulfate Inorganic materials 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
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- 239000011810 insulating material Substances 0.000 description 6
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- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920001955 polyphenylene ether Polymers 0.000 description 6
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 6
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- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- ZQKXQUJXLSSJCH-UHFFFAOYSA-N melamine cyanurate Chemical compound NC1=NC(N)=NC(N)=N1.O=C1NC(=O)NC(=O)N1 ZQKXQUJXLSSJCH-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- KYRKXFXDTJSJAV-UHFFFAOYSA-N oxane;silicon Chemical compound [Si].C1CCOCC1 KYRKXFXDTJSJAV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical class [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- XZTOTRSSGPPNTB-UHFFFAOYSA-N phosphono dihydrogen phosphate;1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(N)=N1.OP(O)(=O)OP(O)(O)=O XZTOTRSSGPPNTB-UHFFFAOYSA-N 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920002627 poly(phosphazenes) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000004436 sodium atom Chemical group 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- LTURHSAEWJPFAA-UHFFFAOYSA-N sulfuric acid;1,3,5-triazine-2,4,6-triamine Chemical compound OS(O)(=O)=O.NC1=NC(N)=NC(N)=N1 LTURHSAEWJPFAA-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 description 1
- CAPOZRICGSDRLP-UHFFFAOYSA-N tris(2,3-dimethylphenyl) phosphate Chemical compound CC1=CC=CC(OP(=O)(OC=2C(=C(C)C=CC=2)C)OC=2C(=C(C)C=CC=2)C)=C1C CAPOZRICGSDRLP-UHFFFAOYSA-N 0.000 description 1
- QLORRTLBSJTMSN-UHFFFAOYSA-N tris(2,6-dimethylphenyl) phosphate Chemical compound CC1=CC=CC(C)=C1OP(=O)(OC=1C(=CC=CC=1C)C)OC1=C(C)C=CC=C1C QLORRTLBSJTMSN-UHFFFAOYSA-N 0.000 description 1
- UJGFGHBOZLCAQI-UHFFFAOYSA-N tris(phosphanyl) borate Chemical compound POB(OP)OP UJGFGHBOZLCAQI-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
- C08J5/241—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres
- C08J5/244—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres using glass fibres
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
- C08J5/249—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs characterised by the additives used in the prepolymer mixture
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
- C08L25/04—Homopolymers or copolymers of styrene
- C08L25/08—Copolymers of styrene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L35/06—Copolymers with vinyl aromatic monomers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2300/00—Characterised by the use of unspecified polymers
- C08J2300/24—Thermosetting resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2435/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Derivatives of such polymers
- C08J2435/06—Copolymers with vinyl aromatic monomers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
Landscapes
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Reinforced Plastic Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
- Epoxy Resins (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
本發明提供一種預浸體的製造方法,該預浸體的尺寸變化量的偏差較小,且本發明提供一種預浸體、積層板、印刷線路板及半導體封裝體,該預浸體的尺寸變化量的偏差較小。進一步,本發明提供一種預浸體、積層板、印刷線路板及半導體封裝體,該等的通孔的位置偏移的不良情形較少發生。前述預浸體的製造方法,具體而言,是一種預浸體的製造方法,其具有:在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物的步驟;及,在前述獲得預浸體前驅物的步驟之後實行的表面加熱處理步驟;並且,前述表面加熱處理步驟是以200~700℃之熱源溫度對預浸體前驅物的表面進行加熱處理的步驟。The present invention provides a method for manufacturing a prepreg. The dimensional variation of the prepreg is small. The invention also provides a prepreg, a laminate, a printed wiring board and a semiconductor package. The prepreg has a dimensional variation of The deviation in the amount of change is small. Furthermore, the present invention provides a prepreg, a laminate, a printed wiring board, and a semiconductor package in which the problem of positional deviation of through holes is less likely to occur. The above-mentioned manufacturing method of a prepreg is specifically a method of manufacturing a prepreg, which includes: after impregnating a base material with a thermosetting resin composition, the thermosetting resin composition is subjected to a B-stage The step of obtaining a prepreg precursor; and, the surface heating step performed after the aforementioned step of obtaining a prepreg precursor; and, the aforementioned surface heating step is to treat the prepreg with a heat source temperature of 200 to 700°C. The step of performing heat treatment on the surface of the precursor.
Description
本發明有關一種預浸體的製造方法、預浸體、積層板、印刷線路板及半導體封裝體。The invention relates to a method for manufacturing a prepreg, a prepreg, a laminated board, a printed circuit board and a semiconductor package.
近年來,電子機器的小型化、輕量化、多功能化等更加進展,伴隨此情形,大型積體電路(LSI)、晶片零件等進行高積體化,且其形態亦正朝向多接腳化及小型化急速變化。因此,為了提高電子零件的構裝密度,多層印刷線路板的微細線路化的開發持續進展。作為符合此等要求的多層印刷線路板的製造手法,例如增建方式的多層印刷線路板正逐漸作為適合輕量化、小型化及微細線路化的手法成為主流,該增建方式是使用預浸體等來作為絕緣層並一面僅以需要的部分來連接一面形成線路層,該需要的部分例如為藉由照射雷射來形成的通孔(以下,亦稱為「雷射通孔」)。In recent years, electronic equipment has become more compact, lightweight, and multi-functional. With this situation, large-scale integrated circuits (LSI), chip components, etc. are becoming highly integrated, and their forms are also becoming multi-pin. and rapid changes in miniaturization. Therefore, in order to increase the packaging density of electronic components, development of multilayer printed wiring boards with finer circuits continues. As a manufacturing method for multilayer printed wiring boards that meets these requirements, the build-up method of multilayer printed wiring boards, which uses prepregs, is gradually becoming mainstream as a method suitable for lightweighting, miniaturization, and fine wiring. As an insulating layer, a wiring layer is formed while connecting only necessary parts, such as through holes formed by irradiating laser (hereinafter also referred to as "laser through holes").
多層印刷線路板的重點在於具備:經以微細的線路間距來形成的複數層的線路圖案之間的高電性連接可靠性及優異的高頻特性,並且,要求與半導體晶片之間的連接可靠性高。特別是,近年來,多功能型行動電話終端等的主機板中,有高速通訊化、線路高密度化、線路板極薄化並且線路板的線路寬(L)與間隔(S)(以下,有時將線路寬與間隔合併標示為[L/S])亦狹窄化的傾向。隨著這樣的L/S狹窄化,逐漸難以良率良好地穩定生產線路板。此外,習知線路板的設計中,是考慮到通訊障礙等而於一部分的層設置有稱為「跳越(skip)層」的無線路圖案之層。電子機器逐漸變成高功能而線路設計量逐漸增加且線路板的層數逐漸增加,但因設置前述跳越層,而產生主機板的厚度會更加增加這樣的問題。 作為改善此等問題的方法,較有效的方法是降低線路板中所使用的絕緣材料的相對介電常數。因為藉由降低絕緣材料的相對介電常數便容易控制L/S的阻抗,因此,能夠以L/S接近現狀設計的形狀來穩定生產,而能夠減少跳越層來減少層數。因此,對於線路板中所使用的絕緣材料,目前正在謀求相對介電常數較小的材料特性。 The key point of a multilayer printed circuit board is to have high electrical connection reliability between multiple layers of circuit patterns formed with fine circuit pitches and excellent high-frequency characteristics. In addition, reliable connection to the semiconductor chip is required. High sex. In particular, in recent years, motherboards for multifunctional mobile phone terminals and the like have been subject to high-speed communications, high-density circuits, extremely thin circuit boards, and the circuit width (L) and spacing (S) of the circuit board (hereinafter, The line width and spacing are sometimes combined and denoted as [L/S]), which also tends to become narrower. As L/S becomes narrower, it becomes increasingly difficult to stably produce circuit boards with good yield. In addition, in the design of conventional circuit boards, a wireless circuit pattern layer called a "skip layer" is provided on some layers in consideration of communication obstacles. As electronic devices become more highly functional, the amount of circuit design is gradually increasing, and the number of circuit board layers is gradually increasing. However, the thickness of the motherboard is further increased due to the provision of the aforementioned jump layer. As a method to improve these problems, a more effective method is to reduce the relative dielectric constant of the insulating material used in the circuit board. Because the impedance of L/S can be easily controlled by lowering the relative dielectric constant of the insulating material, stable production can be achieved with L/S having a shape close to the current design, and the number of layers can be reduced by reducing the number of jump layers. Therefore, for insulating materials used in circuit boards, material properties with a smaller relative dielectric constant are currently being sought.
近年來,在正在隨著電子機器高密度化而進行薄型化及低價化的行動電話等的主機板中,亦為了對應於薄型化而正在謀求相對介電常數較低的材料。此外,在伺服器、路由器、行動基地台等所代表的通訊系統的機器中,亦已逐漸在更高頻帶區域中使用,並且,已逐漸將高熔點的無鉛焊料利用於焊接電子零件,因此,作為此等之中所使用的基板的材料,有謀求低介電常數、高玻璃轉移溫度(高Tg)且回焊耐熱性優異的材料的傾向。In recent years, in motherboards such as mobile phones, which are becoming thinner and cheaper as electronic devices become more dense, materials with a lower relative dielectric constant are being sought to cope with the thinning. In addition, communication system machines represented by servers, routers, mobile base stations, etc. have gradually been used in higher frequency bands, and high melting point lead-free solder has been gradually used to solder electronic parts. Therefore, As a material for the substrate used among these, there is a tendency to require a material with a low dielectric constant, a high glass transition temperature (high Tg), and excellent reflow heat resistance.
此外,多功能型行動電話終端等中所使用的主機板,隨著線路密度增加及圖案寬度狹窄化,而在將層間連接時要求藉由直徑小的雷射通孔來連接。從連接可靠性的觀點來看,有許多例子是使用場鍍覆(field plating),而在內層銅與鍍銅之間的界面的連接性非常重要,因此,有亦謀求提高基材的雷射加工性的傾向。 一般在對基材進行雷射加工後會進行將樹脂的殘渣部分去除的步驟(除膠渣(desmear)處理步驟)。因會在雷射通孔底面及壁面進行除膠渣處理,因此,當基材的樹脂成分因進行除膠渣處理而大量溶解時,有雷射通孔形狀會因樹脂溶解而顯著變形之虞,並且,可能會產生下述各種問題:因壁面的凹凸的偏差而產生均鍍的不均性等。因此,謀求使下述量成為適當的值:基材的樹脂成分因進行除膠渣處理而溶解的量,亦即所謂的除膠渣溶解量。 In addition, motherboards used in multi-function mobile phone terminals and the like require laser vias with small diameters to connect layers as circuit density increases and pattern widths narrow. From the perspective of connection reliability, there are many examples of using field plating, and the connectivity of the interface between the inner copper layer and the copper plating is very important. Therefore, there are also attempts to improve the lightning resistance of the base material. Processability tendency. Generally, after laser processing of the base material, a step of partially removing the resin residue (desmear treatment step) is performed. Since desmear processing will be carried out on the bottom and wall of the laser through hole, when the resin component of the base material is dissolved in large quantities due to the desmear treatment, there is a risk that the shape of the laser through hole will be significantly deformed due to the dissolution of the resin. , and various problems such as the unevenness of throwing plating due to the unevenness of the wall surface may occur. Therefore, it is desired that the amount of the resin component of the base material dissolved by the desmear treatment, that is, the so-called desmear dissolution amount, be an appropriate value.
在對線路板中所使用的絕緣材料所謀求的各種特性中,至今亦已為了降低相對介電常數的目的而使用下述方法:含有相對介電常數較小的環氧樹脂的方法、導入氰酸基的方法、含有聚苯醚的方法等。已提出例如:含有環氧樹脂之樹脂組成物(參照專利文獻1);含有聚苯醚及雙馬來醯亞胺之樹脂組成物(參照專利文獻2);含有聚苯醚及氰酸酯樹脂之樹脂組成物(參照專利文獻3);含有苯乙烯系熱塑性彈性體等及/或三烯丙基氰脲酸酯等之中的至少一種之樹脂組成物(參照專利文獻4);含有聚丁二烯之樹脂組成物(參照專利文獻5);預先使聚苯醚系樹脂與多官能性馬來醯亞胺及/或多官能性氰酸酯樹脂與液狀聚丁二烯進行反應而成之樹脂組成物(參照專利文獻6);含有經將具有不飽和雙鍵基之化合物供給或進行接枝而成的聚苯醚、及三烯丙基氰脲酸酯及/或三烯丙基異氰脲酸酯等之樹脂組成物(參照專利文獻7);含有聚苯醚與不飽和羧酸或不飽和酸酐的反應產物、及多官能性馬來醯亞胺等之樹脂組成物(參照專利文獻8)等。 [先前技術文獻] (專利文獻) Among the various characteristics sought for insulating materials used in circuit boards, the following methods have been used for the purpose of lowering the relative dielectric constant: the method of containing epoxy resin with a small relative dielectric constant, the method of introducing cyanide Acid-based methods, polyphenylene ether-containing methods, etc. For example, resin compositions containing epoxy resin (see Patent Document 1); resin compositions containing polyphenylene ether and bismaleimide (see Patent Document 2); and resin compositions containing polyphenylene ether and cyanate ester have been proposed. A resin composition (refer to Patent Document 3); a resin composition containing at least one of styrenic thermoplastic elastomers and/or triallyl cyanurate, etc. (Refer to Patent Document 4); containing polybutyl Diene resin composition (see Patent Document 5); prepared by reacting polyphenylene ether resin and polyfunctional maleimide and/or polyfunctional cyanate ester resin and liquid polybutadiene in advance A resin composition (see Patent Document 6); containing polyphenylene ether obtained by supplying or grafting a compound having an unsaturated double bond group, and triallyl cyanurate and/or triallyl Resin compositions such as isocyanurate (refer to Patent Document 7); resin compositions containing reaction products of polyphenylene ether and unsaturated carboxylic acid or unsaturated acid anhydride, and polyfunctional maleimide (refer to Patent document 8) etc. [Prior technical literature] (patent document)
專利文獻1:日本特開昭58-69046號公報 專利文獻2:日本特開昭56-133355號公報 專利文獻3:日本特公昭61-18937號公報 專利文獻4:日本特開昭61-286130號公報 專利文獻5:日本特開昭62-148512號公報 專利文獻6:日本特開昭58-164638號公報 專利文獻7:日本特開平2-208355號公報 專利文獻8:日本特開平6-179734號公報 Patent Document 1: Japanese Patent Application Publication No. Sho 58-69046 Patent Document 2: Japanese Patent Application Publication No. Sho 56-133355 Patent document 3: Japanese Patent Publication No. 61-18937 Patent document 4: Japanese Patent Application Publication No. Sho 61-286130 Patent document 5: Japanese Patent Application Publication No. Sho 62-148512 Patent Document 6: Japanese Patent Application Publication No. Sho 58-164638 Patent Document 7: Japanese Patent Application Laid-Open No. 2-208355 Patent Document 8: Japanese Patent Application Laid-Open No. 6-179734
[發明所欲解決的問題] 如前所述,有對線路板中所使用的絕緣材料謀求降低相對介電常數等各種特性的傾向,但關於藉由小直徑的雷射通孔來進行層間連接,最重要的特性之一可舉例如預浸體的尺寸變化量的偏差較小。隨著主機板的薄型化,作為預浸體的積層方法,需要多階段積層方法,而會對預浸體施行複數次加熱及複數次積層時的壓力。因此,當預浸體的尺寸變化量的偏差(意指熱收縮量的偏差)較大時,用以將層間連接的通孔的位置,每次積層都會發生偏移的不良情形。因此,謀求使預浸體的熱收縮量的偏差穩定化。 然而,根據本發明人等的研究得知,含有習知樹脂組成物而成的預浸體,由於無法充分抑制此尺寸變化量的偏差,故在此點上尚有進一步改善的空間。 [Problem to be solved by the invention] As mentioned above, insulating materials used in circuit boards tend to have various characteristics such as lowering the relative dielectric constant. However, one of the most important characteristics for interlayer connection through small-diameter laser vias is For example, the variation in dimensional change of prepregs is small. As motherboards become thinner, a multi-stage lamination method is required as a prepreg lamination method, which requires multiple times of heating and multiple times of pressure during lamination. Therefore, when the variation in the amount of dimensional change of the prepreg (meaning the variation in the amount of thermal shrinkage) is large, the position of the through hole used to connect the layers will shift each time the layers are laminated. Therefore, it is attempted to stabilize the variation in the amount of thermal shrinkage of the prepreg. However, according to studies by the present inventors, it was found that prepregs containing conventional resin compositions cannot sufficiently suppress the variation in dimensional change, so there is still room for further improvement in this regard.
於是,本發明所欲解決的問題在於提供一種預浸體的製造方法,該預浸體的尺寸變化量的偏差較小,且本發明所欲解決的問題在於提供一種預浸體、積層板、印刷線路板及半導體封裝體,該預浸體的尺寸變化量的偏差較小。 此外,本發明所欲解決的問題亦在於提供一種預浸體、積層板、印刷線路板及半導體封裝體,該等的通孔的位置偏移的不良情形較少發生。 [解決問題的技術手段] Therefore, the problem to be solved by the present invention is to provide a method for manufacturing a prepreg that has a small variation in dimensional change, and to provide a prepreg, a laminated board, For printed wiring boards and semiconductor packages, the prepreg has a small variation in dimensional change. In addition, the problem to be solved by the present invention is to provide a prepreg, a laminate, a printed wiring board and a semiconductor package in which the disadvantage of positional deviation of the through holes is less likely to occur. [Technical means to solve problems]
本發明人為了解決上述所欲解決的問題而致力進行研究後,結果發現一種預浸體能夠解決上述所欲解決的問題,遂完成本發明,該預浸體是藉由經過下述步驟來獲得:在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物之後,以既定的熱源溫度對預浸體前驅物的表面進行加熱處理來獲得預浸體的表面加熱處理。本發明是依據這樣的技術思想來完成。After the inventor devoted himself to research in order to solve the above-mentioned problems, he found that a prepreg can solve the above-mentioned problems and completed the present invention. The prepreg is obtained through the following steps. : After the thermosetting resin composition is impregnated into the base material, the thermosetting resin composition is B-staged to obtain a prepreg precursor, and then the surface of the prepreg precursor is treated at a predetermined heat source temperature. Heat treatment is performed to obtain surface heat treatment of the prepreg. The present invention is completed based on such technical ideas.
本發明是有關下述[1]~[20]的技術。 [1]一種預浸體的製造方法,其具有: 在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物的步驟;及, 在前述獲得預浸體前驅物的步驟之後實行的表面加熱處理步驟; 並且,前述表面加熱處理步驟是以200~700℃之熱源溫度對預浸體前驅物的表面進行加熱處理的步驟。 [2]一種預浸體的製造方法,其具有: 在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物的步驟;及, 在前述獲得預浸體前驅物的步驟之後實行的表面加熱處理步驟; 並且,前述表面加熱處理步驟是以使預浸體前驅物的表面溫度成為40~130℃的方式對預浸體前驅物的表面進行加熱處理的步驟。 [3]如上述[1]或[2]所述之預浸體的製造方法,其中,在前述獲得預浸體前驅物的步驟之後且在前述表面加熱處理步驟之前,具有將預浸體前驅物冷卻至5~60℃的步驟。 [4]如上述[1]至[3]中任一項所述之預浸體的製造方法,其中,前述表面加熱處理的時間為1.0~10.0秒。 [5]如上述[1]至[4]中任一項所述之預浸體的製造方法,其中,前述熱硬化性樹脂組成物含有(A)馬來醯亞胺化合物。 [6]如上述[5]所述之預浸體的製造方法,其中,前述(A)成分為具有N-取代馬來醯亞胺基之馬來醯亞胺化合物,其是使(a1)具有至少2個N-取代馬來醯亞胺基之馬來醯亞胺化合物、(a2)由下述通式(a2-1)表示的單胺化合物及(a3)由下述通式(a3-1)表示的二胺化合物進行反應來獲得; 通式(a2-1)中,R A4表示從羥基、羧基及磺酸基之中選出的酸性取代基,R A5表示碳數1~5的烷基或鹵素原子,t為1~5的整數,u為0~4的整數且滿足1≦t+u≦5,其中,當t為2~5的整數時,複數個R A4可相同且亦可不同,此外,當u為2~4的整數時,複數個R A5可相同且亦可不同; 通式(a3-1)中,X A2表示碳數1~3的脂肪族烴基或-O-,R A6及R A7各自獨立地表示碳數1~5的烷基、鹵素原子、羥基、羧基或磺酸基,v及w各自獨立地為0~4的整數。 [7]如上述[5]或[6]所述之預浸體的製造方法,其中,前述熱硬化性樹脂組成物進一步含有: (B)環氧樹脂; (C)共聚樹脂,其具有源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元;及, (D)以胺基矽烷系耦合劑進行處理後的氧化矽。 [8]如上述[7]所述之預浸體的製造方法,其中,前述(B)成分為從由雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基酚醛清漆型環氧樹脂、及雙環戊二烯型環氧樹脂所組成之群組中選出的至少1種。 [9]如上述[7]或[8]所述之預浸體的製造方法,其中,前述(C)成分為具有由下述通式(C-i)表示的結構單元與由下述通式(C-ii)表示的結構單元之共聚樹脂: 式(C-i)中,R C1為氫原子或碳數1~5的烷基,R C2為碳數1~5的烷基、碳數2~5的烯基、碳數6~20的芳基、羥基、或(甲基)丙烯醯基,x為0~3的整數,其中,當x為2或3時,複數個R C2可相同且亦可不同。 [10]一種預浸體,其是包含基材及熱硬化性樹脂組成物而成,且依照下述方法來求出的標準偏差σ為0.012%以下, 標準偏差σ的算出方法: 將厚度18 μm的銅箔重疊在1片預浸體的雙面上,並以190℃、2.45 MPa的條件進行90分鐘的加熱加壓成形,來製作厚度0.1 mm的雙面覆銅積層板;對於以上述方式獲得的雙面覆銅積層板,在該雙面覆銅積層板的面內的在第1圖中所記載的1~8處實施直徑1.0 mm的開孔;對在第1圖中所記載的縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點,使用影像測定機來對各3點之間的距離進行測定後,將各測定距離設為初期值;然後,將外層銅箔去除,並利用乾燥機以185℃加熱60分鐘;冷卻後,以與初期值的測定方法相同之方式,來對縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點之間的距離進行測定;根據相對於各測定距離的初期值的變化率來求出該等變化率的平均值,並算出相對於該平均值的標準偏差σ。 [11]如上述[10]所述之預浸體,其是藉由上述[1]至[9]中任一項所述之預浸體的製造方法來獲得。 [12]如上述[10]所述之預浸體,其中,前述熱硬化性樹脂組成物含有(A)馬來醯亞胺化合物。 [13]如上述[10]或[12]所述之預浸體,其中,前述熱硬化性樹脂組成物進一步含有: (B)環氧樹脂; (C)共聚樹脂,其具有源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元;及, (D)以胺基矽烷系耦合劑進行處理後的氧化矽。 [14]如上述[10]所述之預浸體,其中,前述熱硬化性樹脂組成物含有(G)環氧樹脂及(H)環氧樹脂硬化劑。 [15]如上述[10]所述之預浸體,其中,前述熱硬化性樹脂組成物含有(K)矽氧改質馬來醯亞胺化合物及(L)咪唑化合物。 [16]一種積層板,其是包含上述[10]至[15]中任一項所述之預浸體與金屬箔而成。 [17]一種印刷線路板,其是包含上述[10]至[15]中任一項所述之預浸體或上述[16]所述之積層板而成。 [18]一種半導體封裝體,其是將半導體元件安裝在上述[17]所述之印刷線路板上而成。 [19]如上述[1]至[4]中任一項所述之預浸體的製造方法,其中,前述熱硬化性樹脂組成物含有(G)環氧樹脂及(H)環氧樹脂硬化劑。 [20]如上述[1]至[4]中任一項所述之預浸體的製造方法,其中,前述熱硬化性樹脂組成物含有(K)矽氧改質馬來醯亞胺化合物及(L)咪唑化合物。 [功效] The present invention relates to the following technologies [1] to [20]. [1] A method for manufacturing a prepreg, comprising: impregnating a base material with a thermosetting resin composition, and then B-staged the thermosetting resin composition to obtain a prepreg precursor. ; and, a surface heating treatment step performed after the aforementioned step of obtaining a prepreg precursor; and, the aforementioned surface heating treatment step is a step of heating the surface of the prepreg precursor at a heat source temperature of 200 to 700°C . [2] A method for manufacturing a prepreg, comprising: impregnating a base material with a thermosetting resin composition, and then B-staged the thermosetting resin composition to obtain a prepreg precursor. ; and, a surface heating treatment step performed after the aforementioned step of obtaining a prepreg precursor; and, the aforementioned surface heating treatment step is to treat the prepreg in such a manner that the surface temperature of the prepreg precursor becomes 40 to 130°C. The step of heat treating the surface of the precursor. [3] The method for manufacturing a prepreg according to the above [1] or [2], wherein after the step of obtaining the prepreg precursor and before the step of surface heating treatment, there is a step of converting the prepreg precursor into The step of cooling the material to 5~60℃. [4] The method for manufacturing a prepreg according to any one of the above [1] to [3], wherein the time of the surface heat treatment is 1.0 to 10.0 seconds. [5] The method for producing a prepreg according to any one of [1] to [4] above, wherein the thermosetting resin composition contains (A) a maleimide compound. [6] The method for producing a prepreg according to the above [5], wherein the component (A) is a maleimide compound having an N-substituted maleimide group, and (a1) A maleimine compound having at least 2 N-substituted maleimide groups, (a2) a monoamine compound represented by the following general formula (a2-1), and (a3) represented by the following general formula (a3) The diamine compound represented by -1) is obtained by reacting; In the general formula (a2-1), R A4 represents an acidic substituent selected from a hydroxyl group, a carboxyl group and a sulfonic acid group, R A5 represents an alkyl group having 1 to 5 carbon atoms or a halogen atom, and t is an integer of 1 to 5. , u is an integer from 0 to 4 and satisfies 1≦t+u≦5, where, when t is an integer from 2 to 5, the plural R A4 can be the same or different, in addition, when u is an integer from 2 to 4 , plural RA A5 can be the same or different; In General Formula ( a3-1 ) , or a sulfonic acid group, v and w are each independently an integer of 0 to 4. [7] The method for manufacturing a prepreg according to the above [5] or [6], wherein the thermosetting resin composition further contains: (B) epoxy resin; (C) copolymer resin having source A structural unit derived from a substituted vinyl compound and a structural unit derived from maleic anhydride; and (D) silicon oxide treated with an aminosilane coupling agent. [8] The method for manufacturing a prepreg according to the above [7], wherein the component (B) is selected from the group consisting of bisphenol F-type epoxy resin, phenol novolak-type epoxy resin, and cresol novolak-type epoxy resin. Selected from the group consisting of oxy resin, naphthalene-type epoxy resin, anthracene-type epoxy resin, biphenyl-type epoxy resin, biphenyl aralkyl novolac-type epoxy resin, and dicyclopentadiene-type epoxy resin of at least 1 species. [9] The method for producing a prepreg according to the above [7] or [8], wherein the component (C) has a structural unit represented by the following general formula (Ci) and a structural unit represented by the following general formula (Ci) Copolymer resin of structural unit represented by C-ii): In formula (Ci), R C1 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R C2 is an alkyl group having 1 to 5 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, or an aryl group having 6 to 20 carbon atoms. , hydroxyl group, or (meth)acrylyl group, x is an integer from 0 to 3, where, when x is 2 or 3, the plurality of R C2 may be the same or different. [10] A prepreg including a base material and a thermosetting resin composition, and having a standard deviation σ calculated according to the following method of 0.012% or less. The method for calculating the standard deviation σ is: Divide thickness 18 μm copper foil is overlapped on both sides of a prepreg, and heat and pressure molding is performed at 190°C and 2.45 MPa for 90 minutes to produce a double-sided copper-clad laminate with a thickness of 0.1 mm; for the above The double-sided copper-clad laminated board obtained by the method is provided with openings with a diameter of 1.0 mm at locations 1 to 8 described in Figure 1 on the surface of the double-sided copper-clad laminated board; The vertical direction is the direction of 1-7, 2-6, 3-5 and the horizontal direction is 3 points of the direction of 1-3, 8-4, 7-5. Use the image measuring machine to measure each After measuring the distance between the three points, set each measured distance as an initial value. Then, remove the outer copper foil and heat it with a dryer at 185°C for 60 minutes. After cooling, measure the initial value using the same method. method, to measure the distance between each three points in the vertical direction, that is, the direction of 1-7, 2-6, 3-5, and the horizontal direction, that is, in the direction of 1-3, 8-4, and 7-5. Measurement: Find the average value of the change rates from the initial value of each measured distance, and calculate the standard deviation σ relative to the average value. [11] The prepreg according to the above [10], which is obtained by the prepreg manufacturing method according to any one of the above [1] to [9]. [12] The prepreg according to the above [10], wherein the thermosetting resin composition contains (A) a maleimide compound. [13] The prepreg according to the above [10] or [12], wherein the thermosetting resin composition further contains: (B) epoxy resin; (C) copolymer resin having a substituted a structural unit of a vinyl compound and a structural unit derived from maleic anhydride; and (D) silica treated with an aminosilane coupling agent. [14] The prepreg according to the above [10], wherein the thermosetting resin composition contains (G) epoxy resin and (H) epoxy resin hardener. [15] The prepreg according to the above [10], wherein the thermosetting resin composition contains (K) a silicone-modified maleimide compound and (L) an imidazole compound. [16] A laminated board including the prepreg according to any one of the above [10] to [15] and a metal foil. [17] A printed wiring board including the prepreg according to any one of the above [10] to [15] or the laminate according to the above [16]. [18] A semiconductor package in which a semiconductor element is mounted on the printed wiring board described in [17]. [19] The method for manufacturing a prepreg according to any one of the above [1] to [4], wherein the thermosetting resin composition contains (G) epoxy resin and (H) epoxy resin cured agent. [20] The method for producing a prepreg according to any one of the above [1] to [4], wherein the thermosetting resin composition contains (K) a silicone-modified maleimide compound and (L) Imidazole compound. [effect]
藉由本發明,能夠提供一種預浸體的製造方法,該預浸體的尺寸變化量的偏差較小,且能夠提供一種預浸體、積層板、印刷線路板及半導體封裝體,該預浸體的尺寸變化量的偏差較小。此外,本發明亦能夠提供一種預浸體、積層板、印刷線路板及半導體封裝體,該等的通孔的位置偏移的不良情形較少發生。According to the present invention, it is possible to provide a method for manufacturing a prepreg that has a small variation in dimensional change, and to provide a prepreg, a laminate, a printed wiring board, and a semiconductor package that are The deviation of the dimensional change is small. In addition, the present invention can also provide a prepreg, a laminate, a printed wiring board and a semiconductor package in which the problem of positional deviation of the through holes is less likely to occur.
在本說明書中所記載的數值範圍中,該數值範圍的上限值或下限值可置換為實施例中所揭示的值。此外,數值範圍的下限值及上限值分別能夠與其它數值範圍的下限值及上限值任意組合。 此外,本說明書中所例示的各成分及材料,只要未特別說明,即可單獨使用1種,且亦可併用2種以上。本說明書中,當組成物中存在複數種相當於各成分的物質時,只要未特別說明,即是意指組成物中存在的該複數種物質的合計量。 本發明中亦包含將本說明書中的記載事項任意組合而成的態樣。 In the numerical range described in this specification, the upper limit value or the lower limit value of the numerical range can be replaced with the value disclosed in the Example. In addition, the lower limit value and upper limit value of the numerical range can be arbitrarily combined with the lower limit value and upper limit value of other numerical ranges respectively. In addition, unless otherwise specified, each component and material illustrated in this specification may be used individually by 1 type, and may be used in combination of 2 or more types. In this specification, when a plurality of substances corresponding to each component are present in a composition, it means the total amount of the plurality of substances present in the composition unless otherwise specified. The present invention also includes aspects in which the matters described in this specification are combined arbitrarily.
[預浸體的製造方法] 本發明是一種預浸體的製造方法,其具有: 在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物的步驟(步驟1);及, 在前述獲得預浸體前驅物的步驟之後實行的表面加熱處理步驟(步驟3);並且,前述步驟3是以200~700℃之熱源溫度對預浸體前驅物的表面進行加熱處理而獲得預浸體的步驟。 前述步驟3亦能夠稱為一表面加熱處理步驟,其是在前述獲得預浸體前驅物的步驟之後,以使預浸體前驅物的表面溫度成為40~130℃的方式對預浸體前驅物的表面進行加熱處理而獲得預浸體。 再者,通常較佳是:在前述獲得預浸體前驅物的步驟(步驟1)之後且在前述表面加熱處理步驟(步驟3)之前,具有將預浸體前驅物冷卻至5~35℃的步驟(步驟2)。 以下,依序說明步驟1~3,然後,說明用以構成預浸體的基材及熱硬化性樹脂組成物。 [Prepreg manufacturing method] The invention is a method for manufacturing prepregs, which has: A step (step 1) of impregnating a base material with a thermosetting resin composition and then B-stage the thermosetting resin composition to obtain a prepreg precursor; and, The surface heating treatment step (step 3) is performed after the aforementioned step of obtaining the prepreg precursor; and the aforementioned step 3 is to heat the surface of the prepreg precursor at a heat source temperature of 200 to 700°C to obtain the prepreg precursor. Soaking steps. The aforementioned step 3 can also be called a surface heating treatment step, which is to treat the prepreg precursor so that the surface temperature of the prepreg precursor becomes 40 to 130°C after the aforementioned step of obtaining the prepreg precursor. The surface is heated to obtain a prepreg. Furthermore, it is generally preferred to have a method of cooling the prepreg precursor to 5 to 35°C after the aforementioned step of obtaining the prepreg precursor (step 1) and before the aforementioned surface heating treatment step (step 3). step (step 2). Hereinafter, steps 1 to 3 will be described in order, and then the base material and thermosetting resin composition constituting the prepreg will be described.
<步驟1> 步驟1是在使熱硬化性樹脂組成物含浸於基材中之後,對該熱硬化性樹脂組成物進行B階段化而獲得預浸體前驅物的步驟。 使熱硬化性樹脂組成物含浸於基材中的方法並無特別限定,可舉例如:熱熔法、溶劑法等。 熱熔法是使經藉由加熱來進行低黏度化的熱硬化性樹脂組成物直接含浸於基材中的方法,可舉例如:將熱硬化性樹脂組成物暫時塗佈於剝離性優異的塗佈紙等而形成樹脂薄膜後積層於基材上的方法;使用模具塗佈器等來將熱硬化性樹脂組成物直接塗佈於基材上的方法等。 溶劑法是在使熱硬化性樹脂組成物含有有機溶劑來製作成樹脂清漆的狀態下含浸於基材中的方法,可舉例如:將基材浸漬於樹脂清漆中之後進行乾燥的方法等。 <Step 1> Step 1 is a step in which a base material is impregnated with a thermosetting resin composition, and then the thermosetting resin composition is B-staged to obtain a prepreg precursor. The method of impregnating the base material with the thermosetting resin composition is not particularly limited, and examples include a hot melt method, a solvent method, and the like. The hot melt method is a method of directly impregnating a base material with a thermosetting resin composition whose viscosity is reduced by heating. For example, the thermosetting resin composition is temporarily applied to a coating with excellent releasability. A method of forming a resin film on cloth paper, etc. and then laminating it on a base material; a method of directly applying a thermosetting resin composition to a base material using a die coater, etc. The solvent method is a method in which a thermosetting resin composition contains an organic solvent and is impregnated into a base material in a state of preparing a resin varnish. Examples thereof include a method in which the base material is immersed in the resin varnish and then dried.
藉由在使熱硬化性樹脂組成物含浸於基材中之後實施加熱處理,便能夠獲得一種使熱硬化性樹脂組成物進行B階段化而成的預浸體前驅物。 此處,當應用前述熱熔法時,B階段化可與將前述樹脂薄膜積層於基材上時的加熱同時進行。換言之,能以下述方式對熱硬化性樹脂組成物進行B階段化來獲得預浸體前驅物:將前述樹脂薄膜一面加熱一面積層於基材上,並且在維持此狀態下持續加熱。此時,前述積層時的加熱溫度與進行B階段化時的加熱溫度可相同或不同。將前述樹脂薄膜積層於基材上時,加熱溫度並無特別限定,以15~150℃為佳,可為20~130℃,亦可為20~100℃。 此外,當應用前述溶劑法時,B階段化可與將前述樹脂清漆乾燥時的加熱同時進行。換言之,能以下述方式對熱硬化性樹脂組成物進行B階段化來獲得預浸體前驅物:將基材浸漬於樹脂清漆中之後,一面藉由加熱來將有機溶劑乾燥,一面在維持此狀態下持續加熱。此時,前述積層時的加熱溫度與進行B階段化時的加熱溫度可相同或不同。將前述樹脂清漆乾燥時,加熱溫度並無特別限定,以10~190℃為佳,可為15~180℃,亦可為15~170℃。 By impregnating the base material with the thermosetting resin composition and then performing a heat treatment, it is possible to obtain a prepreg precursor in which the thermosetting resin composition is B-staged. Here, when the aforementioned hot melt method is applied, B-stage formation may be performed simultaneously with heating when the aforementioned resin film is laminated on the base material. In other words, a thermosetting resin composition can be B-staged to obtain a prepreg precursor by laminating the aforementioned resin film on a base material while heating, and continuing to heat while maintaining this state. At this time, the heating temperature during lamination and the heating temperature during B-stage formation may be the same or different. When the aforementioned resin film is laminated on a base material, the heating temperature is not particularly limited, but is preferably 15 to 150°C, may be 20 to 130°C, or may be 20 to 100°C. In addition, when the aforementioned solvent method is applied, B-stage formation may be performed simultaneously with heating when drying the aforementioned resin varnish. In other words, the thermosetting resin composition can be B-staged to obtain a prepreg precursor by immersing the base material in the resin varnish and then drying the organic solvent by heating while maintaining this state. Continue heating. At this time, the heating temperature during lamination and the heating temperature during B-stage formation may be the same or different. When drying the resin varnish, the heating temperature is not particularly limited, but is preferably 10 to 190°C, and may be 15 to 180°C, or 15 to 170°C.
本步驟1中,B階段化的條件只要是能夠對熱硬化性樹脂組成物進行B階段化的條件,則無特別限定,只要因應熱硬化性樹脂的種類等來適當決定即可。作為加熱溫度,例如以70~190℃為佳,可為80~180℃,亦可為120~180℃,亦可為140~180℃。作為加熱方法並無特別限制,可舉例如:使用平板加熱器的加熱方法、藉由熱風的加熱方法、藉由高頻的加熱方法、藉由磁力線的加熱方法、藉由雷射的加熱方法、將此等組合而成的加熱方法等。此等之中,使用平板加熱器的加熱方法、藉由熱風的加熱方法較簡便,而較佳。此外,作為加熱時間,例如為1~30分鐘,可為2~20分鐘,亦可為2~10分鐘,亦可為2~6分鐘。In this step 1, the B-stage conditions are not particularly limited as long as the thermosetting resin composition can be B-staged, and may be appropriately determined according to the type of thermosetting resin and the like. As the heating temperature, for example, 70 to 190°C is preferred, and it may be 80 to 180°C, 120 to 180°C, or 140 to 180°C. The heating method is not particularly limited, and examples include a heating method using a flat heater, a heating method using hot air, a heating method using high frequency, a heating method using magnetic lines of force, and a heating method using a laser. Heating methods that combine these, etc. Among these, the heating method using a flat heater and the heating method using hot air are simpler and more preferable. In addition, the heating time may be, for example, 1 to 30 minutes, 2 to 20 minutes, 2 to 10 minutes, or 2 to 6 minutes.
<步驟2> 步驟2是將步驟1中所獲得的預浸體前驅物冷卻的步驟。換言之,步驟2是針對在步驟1中對預浸體前驅物實施加熱處理而使其進行B階段化而得而獲得的預浸體前驅物,將該預浸體前驅物至少冷卻至比進行該加熱處理的溫度更低的溫度的步驟。 藉由實施步驟2,而會接受熱硬化性樹脂組成物的B階段化及冷卻這樣的在製造預浸體時一般會施加的熱履歷,而所獲得的預浸體前驅物,有會在其內部存在有習知預浸體會發生的應變等的傾向,該應變會成為尺寸變化的主要原因。 如上所述,藉由在後述的步驟3之前預先使起因於加熱(步驟1)及冷卻(步驟2)這樣的熱履歷而發生的應變等存在於內部,便容易有效實現下述而因此較佳:藉由步驟3來消除上述應變等及使尺寸變化量均勻。進一步,由於起因於加熱(步驟1)及冷卻(步驟2)這樣的熱履歷的應變已藉由步驟3來消除,而在步驟3以後即使施加相同的熱履歷亦不會發生應變、或即使發生應變亦非常小,故藉由本發明來獲得的預浸體有尺寸變化量的偏差極小的傾向。 <Step 2> Step 2 is a step of cooling the prepreg precursor obtained in step 1. In other words, step 2 is to cool the prepreg precursor obtained by subjecting the prepreg precursor to a B-stage by heat treatment in step 1 and cooling the prepreg precursor to at least a lower temperature than that in which the prepreg precursor is B-staged. The temperature of the heat treatment is a lower temperature step. By implementing step 2, the thermosetting resin composition undergoes a heat history that is generally applied when manufacturing a prepreg, such as B-stage formation and cooling, and the prepreg precursor obtained may be Internally, there is a tendency for strain, etc., which is known to occur in prepregs, and this strain may become the main cause of dimensional changes. As mentioned above, it is preferable to allow the strain etc. caused by thermal history such as heating (step 1) and cooling (step 2) to exist inside before step 3 to be described later. This makes it easier to effectively achieve the following. : Use step 3 to eliminate the above-mentioned strains and make the dimensional changes uniform. Furthermore, since the strain caused by the thermal history of heating (step 1) and cooling (step 2) has been eliminated by step 3, even if the same thermal history is applied after step 3, no strain will occur, or even if it does The strain is also very small, so the prepreg obtained by the present invention tends to have extremely small variation in the amount of dimensional change.
預浸體前驅物的冷卻可藉由自然放置冷卻來進行,亦可使用送風裝置、冷卻輥等冷卻裝置來進行。再者,從生產性的觀點來看,較佳是藉由送風裝置來進行冷卻。本步驟中,冷卻後的預浸體前驅物的表面溫度通常為5~60℃,以10~45℃為佳,以10~30℃較佳,以室溫更佳。 再者,本說明書中,所謂室溫,是指未進行加熱、冷卻等溫度控制的環境溫度,一般為15~25℃左右,但由於可能會因天候、季節等而改變,故並不限定於上述範圍內。 The prepreg precursor can be cooled by leaving it to cool naturally, or by using cooling devices such as air blowers and cooling rollers. Furthermore, from the viewpoint of productivity, cooling is preferably performed by an air blower. In this step, the surface temperature of the cooled prepreg precursor is usually 5-60°C, preferably 10-45°C, preferably 10-30°C, and more preferably room temperature. In addition, in this specification, the so-called room temperature refers to the ambient temperature without temperature control such as heating and cooling. It is generally about 15 to 25°C, but it may change due to weather, season, etc., so it is not limited to within the above range.
<步驟3> 步驟3是表面加熱處理步驟,其對前述步驟1或前述步驟2中所獲得的預浸體前驅物,以200~700℃之熱源溫度對預浸體前驅物的表面進行加熱處理而獲得預浸體;且亦能夠稱為一表面加熱處理步驟,其以使預浸體前驅物的表面溫度成為40~130℃的方式對預浸體前驅物的表面進行加熱處理而獲得預浸體。 藉由本步驟3,預浸體的尺寸變化量的偏差會較小。其正確的理由雖尚不明確,但被認為:藉由本步驟3,能夠消除在步驟1或步驟2中所獲得的預浸體前驅物中的基材的應變,而能夠減少源自該應變的硬化時的尺寸變化,因此,能夠減少尺寸變化量的偏差。藉由減少該尺寸變化量的偏差,而能夠減少通孔發生位置偏移的不良情形。 <Step 3> Step 3 is a surface heating treatment step, which heats the surface of the prepreg precursor obtained in the aforementioned step 1 or the aforementioned step 2 at a heat source temperature of 200 to 700°C to obtain a prepreg. It can also be called a surface heating treatment step, which heats the surface of the prepreg precursor so that the surface temperature of the prepreg precursor becomes 40 to 130°C to obtain a prepreg. Through this step 3, the deviation of the dimensional change amount of the prepreg will be smaller. The correct reason for this is not yet clear, but it is thought that through this step 3, the strain of the base material in the prepreg precursor obtained in step 1 or step 2 can be eliminated, and the strain caused by the strain can be reduced. Dimensional changes during hardening, therefore, the variation in dimensional changes can be reduced. By reducing the variation in the dimensional change amount, the problem of positional deviation of the through holes can be reduced.
步驟3中,作為表面加熱處理的加熱方法並無特別限制,可舉例如:使用平板加熱器的加熱方法、藉由熱風的加熱方法、藉由高頻的加熱方法、藉由磁力線的加熱方法、藉由雷射的加熱方法、將此等組合而成的加熱方法等。此等之中,從控制表面溫度的容易性的觀點來看,較佳是使用平板加熱器的加熱方法、藉由熱風的加熱方法。 本發明的一態樣中,表面加熱處理是以200~700℃之熱源溫度來實施,從使預浸體的生產性保持更良好的觀點、及將預浸體保持在B階段狀態而一面使成形性保持良好一面減少尺寸變化量的偏差的觀點來看,表面加熱處理較佳是在比在步驟1中進行B階段化時的加熱處理更高溫且更短時間內進行。從該觀點來看,進行表面加熱處理時的熱源溫度以250~700℃為佳,以300~600℃較佳,以350~550℃更佳。特別是,當實施使用平板加熱器的加熱方法或藉由熱風的加熱方法時,較佳是在前述溫度範圍內實施表面加熱處理。 再者,本發明的一態樣中,從一面使預浸體的成形性保持良好一面減少尺寸變化量的偏差的觀點來看,表面加熱處理是以使預浸體前驅物的表面溫度成為例如下述溫度的方式實施:較佳為40~130℃,更佳為40~110℃,進一步更佳為60~90℃。較佳是藉由前述熱源溫度來將預浸體前驅物的表面溫度設為該範圍。 表面加熱處理的加熱時間並無特別限制,從使預浸體的生產性保持良好的觀點、及將預浸體保持在B階段狀態而一面使成形性保持良好一面減少尺寸變化量的偏差的觀點來看,以1.0~10.0秒為佳,以1.5~6.0秒較佳,以2.0~4.0秒更佳。 從一面使預浸體的成形性保持良好一面減少尺寸變化量的偏差的觀點來看,由表面加熱處理所造成的預浸體前驅物的表面溫度的上升值(亦即,表面加熱處理前的表面溫度與在表面加熱處理中所到達的最高表面溫度之間的差值的絕對值)以5~110℃為佳,以20~90℃較佳,以40~70℃更佳。 其中,表面加熱處理的詳細加熱條件只要為能夠藉由將熱源溫度設為前述範圍來使預浸體前驅物的表面溫度比實施表面加熱處理之前的表面溫度更加上升的條件即可,且只要在不會對所獲得的預浸體的各種特性(例如流動性)造成顯著影響的範圍內,則無特別限定,只要因應熱硬化性樹脂的種類等來適當決定即可。 In step 3, the heating method of the surface heat treatment is not particularly limited, and examples thereof include: a heating method using a flat heater, a heating method using hot air, a heating method using high frequency, and a heating method using magnetic lines of force. Heating methods by laser, heating methods combining these, etc. Among these, from the viewpoint of ease of controlling the surface temperature, the heating method using a flat heater and the heating method using hot air are preferred. In one aspect of the present invention, the surface heating treatment is performed at a heat source temperature of 200 to 700° C., from the viewpoint of maintaining better productivity of the prepreg and maintaining the prepreg in the B-stage state while using it. From the viewpoint of reducing variation in dimensional change while maintaining good formability, the surface heat treatment is preferably performed at a higher temperature and in a shorter time than the heat treatment when performing B-stage formation in step 1. From this point of view, the heat source temperature when performing surface heating treatment is preferably 250 to 700°C, more preferably 300 to 600°C, and more preferably 350 to 550°C. In particular, when performing a heating method using a flat heater or a heating method using hot air, it is preferable to perform surface heating treatment within the aforementioned temperature range. Furthermore, in one aspect of the present invention, from the viewpoint of reducing variation in dimensional change while maintaining good formability of the prepreg, the surface heating treatment is performed such that the surface temperature of the prepreg precursor becomes, for example, It is carried out at the following temperature: preferably 40 to 130°C, more preferably 40 to 110°C, still more preferably 60 to 90°C. It is preferable to set the surface temperature of the prepreg precursor to this range based on the aforementioned heat source temperature. The heating time of the surface heat treatment is not particularly limited, from the viewpoint of maintaining good productivity of the prepreg, and from the viewpoint of maintaining the prepreg in the B-stage state and reducing the variation in dimensional change while maintaining good formability. It seems that 1.0 to 10.0 seconds is better, 1.5 to 6.0 seconds is better, and 2.0 to 4.0 seconds is better. From the viewpoint of reducing the variation in dimensional change while maintaining good formability of the prepreg, the increase in the surface temperature of the prepreg precursor caused by the surface heat treatment (that is, the increase in the surface temperature of the prepreg precursor before the surface heat treatment) The absolute value of the difference between the surface temperature and the maximum surface temperature reached during the surface heating treatment) is preferably 5 to 110°C, more preferably 20 to 90°C, and more preferably 40 to 70°C. The detailed heating conditions of the surface heating treatment only need to be conditions that can raise the surface temperature of the prepreg precursor higher than the surface temperature before the surface heating treatment by setting the heat source temperature to the aforementioned range, and as long as the surface temperature is There is no particular limitation within the range that the various properties (such as fluidity) of the obtained prepreg are not significantly affected, and it may be appropriately determined according to the type of thermosetting resin, etc.
從預浸體的處理性及沾黏性的觀點來看,步驟3中所獲得的預浸體較佳是提供至將此預浸體冷卻的冷卻步驟中。預浸體的冷卻可藉由自然放置冷卻來進行,亦可使用送風裝置、冷卻輥等冷卻裝置來進行。冷卻後的預浸體的溫度通常為5~80℃,以8~50℃為佳,以10~30℃較佳,以室溫更佳。From the viewpoint of the handleability and adhesion of the prepreg, the prepreg obtained in step 3 is preferably provided to a cooling step of cooling the prepreg. The prepreg can be cooled by natural cooling, or by using cooling devices such as air blowers and cooling rollers. The temperature of the prepreg after cooling is usually 5 to 80°C, preferably 8 to 50°C, preferably 10 to 30°C, and more preferably room temperature.
以上述方式獲得的本發明的預浸體中,熱硬化性樹脂組成物的以固體成分來換算的含量以20~90質量%為佳,以30~85質量%較佳,以50~80質量%更佳。 本發明的預浸體的厚度例如為0.01~0.5 mm,從成形性及能夠高密度佈線的觀點來看,以0.02~0.3 mm為佳,以0.05~0.2 mm較佳。 In the prepreg of the present invention obtained in the above manner, the content of the thermosetting resin composition in terms of solid content is preferably 20 to 90 mass%, preferably 30 to 85 mass%, and 50 to 80 mass%. % better. The thickness of the prepreg of the present invention is, for example, 0.01 to 0.5 mm. From the viewpoint of formability and high-density wiring, it is preferably 0.02 to 0.3 mm, and more preferably 0.05 to 0.2 mm.
以下,依序詳細敘述製造本發明的預浸體時所使用的基材及熱硬化性樹脂組成物。 [基材] 作為用以構成本發明的預浸體的基材,是使用薄片狀強化基材,且能夠使用各種電絕緣材料用積層板中所使用的習知基材。作為基材的材質,可舉例如:像紙、棉絨這樣的天然纖維;玻璃纖維及石綿等無機纖維;芳醯胺、聚醯亞胺、聚乙烯醇、聚酯、四氟乙烯及壓克力等有機纖維;此等的混合物等。此等之中,從難燃性的觀點來看,以玻璃纖維為佳。作為玻璃纖維基材,可舉例如:使用E玻璃、C玻璃、D玻璃、S玻璃等而得的織布、或以有機黏合劑來將短纖維黏著而成的玻璃織布;將玻璃纖維與纖維素纖維混抄而成的基材等。以使用E玻璃而得的玻璃織布較佳。 此等基材具有例如:織布、不織布、紗束、切股氈、表面氈等形狀。再者,材質及形狀是依目標的成形物的用途和性能來選擇,可單獨使用1種,且亦能夠因應需要來組合2種以上的材質及形狀。 基材的厚度例如為0.01~0.5 mm,從成形性及能夠高密度佈線的觀點來看,以0.015~0.2 mm為佳,以0.02~0.15 mm較佳。從耐熱性、耐濕性、加工性等觀點來看,此等基材較佳為:經以矽烷耦合劑等來進行表面處理後的基材、經實施機械性的開纖處理後的基材。 Hereinafter, the base material and the thermosetting resin composition used in manufacturing the prepreg of the present invention will be described in detail in order. [Substrate] As the base material constituting the prepreg of the present invention, a sheet-shaped reinforced base material is used, and conventional base materials used in various laminates for electrically insulating materials can be used. Examples of the base material include natural fibers such as paper and cotton lint; inorganic fibers such as glass fiber and asbestos; arylamide, polyimide, polyvinyl alcohol, polyester, tetrafluoroethylene, and acrylic. organic fibers such as force; mixtures thereof, etc. Among these, glass fiber is preferred from the viewpoint of flame retardancy. Examples of the glass fiber base material include: woven fabrics using E glass, C glass, D glass, S glass, etc.; or glass woven fabrics in which short fibers are bonded with an organic binder; glass fibers and Base materials made of mixed cellulose fibers, etc. Glass fabric using E glass is preferred. These substrates have shapes such as woven fabrics, non-woven fabrics, yarn bundles, cut-strand felts, surface felts, etc. Furthermore, the material and shape are selected according to the intended use and performance of the molded article. One type can be used alone, and two or more materials and shapes can be combined as needed. The thickness of the base material is, for example, 0.01 to 0.5 mm. From the viewpoint of formability and high-density wiring, 0.015 to 0.2 mm is preferable, and 0.02 to 0.15 mm is more preferable. From the viewpoints of heat resistance, moisture resistance, processability, etc., these substrates are preferably surface-treated with a silane coupling agent or the like, or mechanically opened. .
然而,前述專利文獻1~8中所記載的預浸體雖顯示相對較良好的相對介電常數,但無法滿足近年來市場的嚴格要求的例子逐漸增加。此外,不僅無法充分抑制尺寸變化量的偏差,且亦經常有高耐熱性、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性(雷射加工性)之中的任一種不充分,而在此點上尚有進一步改善的空間。此外,實際情況是以往尚未從滿足全部前述特性這樣的觀點來充分開發材料。 然而,本發明中,藉由一面利用前述本發明的預浸體的製造方法一面將熱硬化性樹脂組成物的成分設為下述成分,而除了充分抑制尺寸變化量的偏差以外還能夠使高耐熱性、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性(雷射加工性)皆令人滿意。從此觀點來看,較佳是使用下述熱硬化性樹脂組成物。 However, although the prepregs described in the aforementioned Patent Documents 1 to 8 show relatively good relative dielectric constants, there are an increasing number of examples in which they cannot meet the stringent requirements of the market in recent years. In addition, not only cannot the variation in dimensional change be sufficiently suppressed, but there are also often problems in high heat resistance, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties (laser processability). Neither is adequate, and there is room for further improvement at this point. In addition, the actual situation is that materials have not been fully developed from the perspective of satisfying all the aforementioned characteristics. However, in the present invention, by using the prepreg manufacturing method of the present invention described above and setting the components of the thermosetting resin composition to the following components, it is possible to fully suppress the variation in the amount of dimensional change and to achieve a high temperature. Heat resistance, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties (laser processability) are all satisfactory. From this viewpoint, it is preferable to use the following thermosetting resin composition.
[熱硬化性樹脂組成物] 本發明中能夠使用的熱硬化性樹脂組成物並無特別限制,從除了充分抑制尺寸變化量的偏差以外還能夠使高耐熱性、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性(雷射加工性)皆令人滿意的觀點來看,較佳為一種熱硬化性樹脂組成物(以下稱為熱硬化性樹脂組成物[I]),其含有(A)馬來醯亞胺化合物。從相同的觀點來看,熱硬化性樹脂組成物[I]更佳是進一步含有:(B)環氧樹脂;(C)共聚樹脂,其具有源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元;及,(D)以胺基矽烷系耦合劑進行處理後的氧化矽。從相同的觀點來看,熱硬化性樹脂組成物[I]較佳是含有(E)硬化劑,並且,從難燃性的觀點來看,較佳是含有(F)難燃劑。 此外,從充分抑制尺寸變化量的偏差的觀點來看,可為環氧樹脂組成物[II],其含有:(G)環氧樹脂及(H)環氧樹脂硬化劑、以及因應需要的(I)硬化促進劑及(J)無機填充材料,亦可為熱硬化性樹脂組成物[III],其含有(K)矽氧改質馬來醯亞胺化合物及(L)咪唑化合物、以及因應需要的(M)無機填充材料。 [Thermosetting resin composition] The thermosetting resin composition that can be used in the present invention is not particularly limited. It can achieve high heat resistance, high metal foil adhesion, high glass transition temperature, low thermal expansion, and moldability in addition to fully suppressing the variation in dimensional change. From the viewpoint of satisfactory properties and throwing properties (laser processability), a thermosetting resin composition (hereinafter referred to as thermosetting resin composition [I]) containing (A) is preferred Maleimide compounds. From the same viewpoint, the thermosetting resin composition [I] preferably further contains: (B) epoxy resin; (C) copolymer resin having a structural unit and source derived from a substituted vinyl compound A structural unit derived from maleic anhydride; and (D) silica treated with an aminosilane coupling agent. From the same viewpoint, the thermosetting resin composition [I] preferably contains the (E) curing agent, and from the viewpoint of flame retardancy, it is preferable to contain the (F) flame retardant. In addition, from the viewpoint of fully suppressing variation in the amount of dimensional change, an epoxy resin composition [II] containing (G) epoxy resin and (H) epoxy resin hardener, and (if necessary) may be used. I) hardening accelerator and (J) inorganic filler material, which can also be a thermosetting resin composition [III], which contains (K) silicone modified maleimide compound and (L) imidazole compound, and Required (M) Inorganic filler material.
首先,詳細說明熱硬化性樹脂組成物[I]含有的各成分。 <(A)馬來醯亞胺化合物> (A)成分為馬來醯亞胺化合物(以下,有時稱為馬來醯亞胺化合物(A)),以具有N-取代馬來醯亞胺基之馬來醯亞胺化合物為佳,較佳為一種具有N-取代馬來醯亞胺基之馬來醯亞胺化合物,其是使(a1)具有至少2個N-取代馬來醯亞胺基之馬來醯亞胺化合物[以下,簡稱為馬來醯亞胺化合物(a1)]、(a2)由下述通式(a2-1)表示的單胺化合物[以下,簡稱為單胺化合物(a2)]及(a3)由下述通式(a3-1)表示的二胺化合物[以下,簡稱為二胺化合物(a3)]進行反應來獲得。 通式(a2-1)中,R A4表示從羥基、羧基及磺酸基之中選出的酸性取代基,R A5表示碳數1~5的烷基或鹵素原子,t為1~5的整數,u為0~4的整數,且滿足1≦t+u≦5,其中,當t為2~5的整數時,複數個R A4可相同且亦可不同,此外,當u為2~4的整數時,複數個R A5可相同且亦可不同; 通式(a3-1)中,X A2表示碳數1~3的脂肪族烴基或-O-,R A6及R A7各自獨立地表示碳數1~5的烷基、鹵素原子、羥基、羧基、或磺酸基,v及w各自獨立地為0~4的整數。 以下,關於馬來醯亞胺化合物(A)的記載,亦能夠解讀為上述具有N-取代馬來醯亞胺基之馬來醯亞胺化合物的記載。 First, each component contained in the thermosetting resin composition [I] will be described in detail. <(A) Maleimine Compound> The component (A) is a maleimine compound (hereinafter, sometimes referred to as a maleimide compound (A)) having an N-substituted maleimine compound. It is preferably a maleimide compound having an N-substituted maleimide group, preferably a maleimide compound having an N-substituted maleimide group, wherein (a1) has at least 2 N-substituted maleimide groups. Amine-based maleimine compound [hereinafter, abbreviated to maleimine compound (a1)], (a2) a monoamine compound represented by the following general formula (a2-1) [hereinafter, abbreviated to monoamine Compounds (a2)] and (a3) are obtained by reacting a diamine compound represented by the following general formula (a3-1) [hereinafter simply referred to as a diamine compound (a3)]. In the general formula (a2-1), R A4 represents an acidic substituent selected from a hydroxyl group, a carboxyl group and a sulfonic acid group, R A5 represents an alkyl group having 1 to 5 carbon atoms or a halogen atom, and t is an integer of 1 to 5. , u is an integer from 0 to 4, and satisfies 1≦t+u≦5, where, when t is an integer from 2 to 5, the plural R A4 can be the same or different, in addition, when u is an integer from 2 to 4 When , a plurality of R A5 can be the same or different; In General Formula ( a3-1 ) , , or a sulfonic acid group, v and w are each independently an integer from 0 to 4. The following description of the maleimide compound (A) can also be interpreted as the description of the maleimide compound having an N-substituted maleimide group.
從對有機溶劑的溶解性的觀點及機械強度的觀點來看,馬來醯亞胺化合物(A)的重量平均分子量(Mw)以400~3,500為佳,以400~2,300較佳,以800~2,000更佳。再者,本說明書中,重量平均分子量為以使用四氫呋喃來作為溶析液的凝膠滲透層析(GPC)法(以標準聚苯乙烯來換算)來測得的值,更具體而言,是藉由實施例中所記載的方法來測得的值。From the viewpoint of solubility in organic solvents and mechanical strength, the weight average molecular weight (Mw) of the maleimide compound (A) is preferably 400 to 3,500, more preferably 400 to 2,300, and 800 to 800. 2,000 is better. In addition, in this specification, the weight average molecular weight is a value measured by the gel permeation chromatography (GPC) method (converted to standard polystyrene) using tetrahydrofuran as a solution. More specifically, it is Values measured by the method described in the Examples.
(馬來醯亞胺化合物(a1)) 馬來醯亞胺化合物(a1)是一分子中具有至少2個N-取代馬來醯亞胺基之馬來醯亞胺化合物。 作為馬來醯亞胺化合物(a1),可舉例如:在複數個馬來醯亞胺基之中的任意2個馬來醯亞胺基之間具有脂肪族烴基(其中,不存在芳香族烴基)之馬來醯亞胺化合物[以下,稱為含脂肪族烴基馬來醯亞胺]、或在複數個馬來醯亞胺基之中的任意2個馬來醯亞胺基之間含有芳香族烴基之馬來醯亞胺化合物[以下,稱為含芳香族烴基馬來醯亞胺]。此等之中,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,以含芳香族烴基馬來醯亞胺為佳。含芳香族烴基馬來醯亞胺只要在任意選出的2個馬來醯亞胺基的任一種組合之間含有芳香族烴基即可,並且,亦可同時具有脂肪族烴基及芳香族烴基。 從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,馬來醯亞胺化合物(a1)較佳是一分子中具有2個~5個N-取代馬來醯亞胺基之馬來醯亞胺化合物,更佳是一分子中具有2個N-取代馬來醯亞胺基之馬來醯亞胺化合物。此外,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,馬來醯亞胺化合物(a1)較佳是由下述通式(a1-1)~(a1-4)之中的任一種表示的含芳香族烴基馬來醯亞胺,更佳是由下述通式(a1-1)、(a1-2)或(a1-4)表示的含芳香族烴基馬來醯亞胺,特佳是由下述通式(a1-2)表示的含芳香族烴基馬來醯亞胺。 (Maleimide compound (a1)) The maleimide compound (a1) is a maleimide compound having at least two N-substituted maleimide groups in one molecule. Examples of the maleimine compound (a1) include an aliphatic hydrocarbon group between any two maleimide groups among a plurality of maleimine groups (where no aromatic hydrocarbon group is present). ) of a maleimine compound [hereinafter, referred to as aliphatic hydrocarbon group-containing maleimide], or an aromatic aromatic compound between any two maleimine groups among a plurality of maleimine groups. A maleimide compound containing an aromatic hydrocarbon group [hereinafter referred to as an aromatic hydrocarbon group-containing maleimide compound]. Among them, aromatic hydrocarbon-containing maleyl is the most popular from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties. Imine is preferred. The aromatic hydrocarbon group-containing maleimine only needs to contain an aromatic hydrocarbon group between any combination of two arbitrarily selected maleimine groups, and may have both an aliphatic hydrocarbon group and an aromatic hydrocarbon group. The maleimide compound (a1) is preferred from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties. A maleimine compound having 2 to 5 N-substituted maleimide groups in the molecule, more preferably a maleimine compound having 2 N-substituted maleimide groups in the molecule . In addition, the maleimide compound (a1) is preferable from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties. It is an aromatic hydrocarbon group-containing maleimide represented by any one of the following general formulas (a1-1) to (a1-4), more preferably, it is represented by the following general formulas (a1-1), (a1 The aromatic hydrocarbon group-containing maleimide represented by -2) or (a1-4) is particularly preferably the aromatic hydrocarbon group-containing maleimide represented by the following general formula (a1-2).
上述式(a1-1)~(a1-3)中,R A1~R A3各自獨立地表示碳數1~5的脂肪族烴基;X A1表示碳數1~5的伸烷基、碳數2~5的亞烷基、-O-、-C(=O)-、-S-、-S-S-、或磺醯基;p、q及r各自獨立地為0~4的整數;s為0~10的整數。 作為R A1~R A3表示的碳數1~5的脂肪族烴基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,作為該脂肪族烴基,以碳數1~3的脂肪族烴基為佳,以甲基、乙基較佳。 In the above formulas (a1-1) to (a1-3), R A1 to R A3 each independently represent an aliphatic hydrocarbon group having 1 to 5 carbon atoms; X A1 represents an alkylene group having 1 to 5 carbon atoms or 2 carbon atoms. ~5 alkylene group, -O-, -C(=O)-, -S-, -S-S-, or sulfonyl group; p, q and r are each independently an integer from 0 to 4; s It is an integer from 0 to 10. Examples of the aliphatic hydrocarbon group having 1 to 5 carbon atoms represented by R A1 to R A3 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n- Pentyl etc. From the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties, as the aliphatic hydrocarbon group, an aliphatic hydrocarbon group having 1 to 3 carbon atoms is used. Aliphatic hydrocarbon groups are preferred, and methyl and ethyl groups are preferred.
作為X A1表示的碳數1~5的伸烷基,可舉例如:亞甲基、1,2-二亞甲基、1,3-三亞甲基、1,4-四亞甲基、1,5-五亞甲基等。從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,作為該伸烷基,以碳數1~3的伸烷基為佳,以亞甲基較佳。 作為X A1表示的碳數2~5的亞烷基,可舉例如:亞乙基、亞丙基、亞異丙基、亞丁基、亞異丁基、亞戊基、亞異戊基等。此等之中,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,作為該亞烷基,以亞異丙基為佳。 上述選項中,作為X A1,以碳數1~5的伸烷基、碳數2~5的亞烷基為佳。較佳例是如前所述。 p、q及r各自獨立地為0~4的整數,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,任一種皆以0~2為佳,以0或1較佳,以0更佳。 s為0~10的整數,從取得容易性的觀點來看,以0~5為佳,以0~3較佳。特別是,由通式(a1-3)表示的含芳香族烴基馬來醯亞胺化合物,較佳是s為0~3的混合物。 Examples of the alkylene group having 1 to 5 carbon atoms represented by X A1 include methylene, 1,2-dimethylene, 1,3-trimethylene, 1,4-tetramethylene, 1 ,5-pentamethylene, etc. From the viewpoints of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties, the alkylene group has 1 to 3 carbon atoms. An alkylene group is preferred, and a methylene group is preferred. Examples of the alkylene group having 2 to 5 carbon atoms represented by X A1 include ethylene group, propylene group, isopropylene group, butylene group, isobutylene group, pentylene group, isopentylene group, and the like. Among them, as the alkylene group, from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties, alkylene groups are Isopropyl is preferred. Among the above options, X A1 is preferably an alkylene group having 1 to 5 carbon atoms or an alkylene group having 2 to 5 carbon atoms. The preferred example is as mentioned above. p, q and r are each independently an integer from 0 to 4, from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties. Look, in any case, 0 to 2 is better, 0 or 1 is better, and 0 is better. s is an integer of 0 to 10, and from the viewpoint of ease of acquisition, 0 to 5 is preferred, and 0 to 3 is more preferred. In particular, the aromatic hydrocarbon group-containing maleimide compound represented by the general formula (a1-3) is preferably a mixture in which s is 0 to 3.
馬來醯亞胺化合物(a1)具體而言可舉例如:N,N’-伸乙基雙馬來醯亞胺、N,N’-六亞甲基雙馬來醯亞胺、雙(4-馬來醯亞胺基環己基)甲烷、1,4-雙(馬來醯亞胺基甲基)環己烷等含脂肪族烴基馬來醯亞胺;N,N’-(1,3-伸苯基)雙馬來醯亞胺、N,N’-[1,3-(2-甲基伸苯基)]雙馬來醯亞胺、N,N’-[1,3-(4-甲基伸苯基)]雙馬來醯亞胺、N,N’-(1,4-伸苯基)雙馬來醯亞胺、雙(4-馬來醯亞胺基苯基)甲烷、雙(3-甲基-4-馬來醯亞胺基苯基)甲烷、3,3’-二甲基-5,5’-二乙基-4,4’-二苯基甲烷雙馬來醯亞胺、雙(4-馬來醯亞胺基苯基)醚、雙(4-馬來醯亞胺基苯基)碸、雙(4-馬來醯亞胺基苯基)硫醚、雙(4-馬來醯亞胺基苯基)酮、1,4-雙(4-馬來醯亞胺基苯基)環己烷、1,4-雙(馬來醯亞胺基甲基)環己烷、1,3-雙(4-馬來醯亞胺基苯氧基)苯、1,3-雙(3-馬來醯亞胺基苯氧基)苯、雙[4-(3-馬來醯亞胺基苯氧基)苯基]甲烷、雙[4-(4-馬來醯亞胺基苯氧基)苯基]甲烷、1,1-雙[4-(3-馬來醯亞胺基苯氧基)苯基]乙烷、1,1-雙[4-(4-馬來醯亞胺基苯氧基)苯基]乙烷、1,2-雙[4-(3-馬來醯亞胺基苯氧基)苯基]乙烷、1,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]乙烷、2,2-雙[4-(3-馬來醯亞胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷、2,2-雙[4-(3-馬來醯亞胺基苯氧基)苯基]丁烷、2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丁烷、2,2-雙[4-(3-馬來醯亞胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、4,4-雙(3-馬來醯亞胺基苯氧基)聯苯、4,4-雙(4-馬來醯亞胺基苯氧基)聯苯、雙[4-(3-馬來醯亞胺基苯氧基)苯基]酮、雙[4-(4-馬來醯亞胺基苯氧基)苯基]酮、2,2’-雙(4-馬來醯亞胺基苯基)二硫醚、雙(4-馬來醯亞胺基苯基)二硫醚、雙[4-(3-馬來醯亞胺基苯氧基)苯基]硫醚、雙[4-(4-馬來醯亞胺基苯氧基)苯基]硫醚、雙[4-(3-馬來醯亞胺基苯氧基)苯基]亞碸、雙[4-(4-馬來醯亞胺基苯氧基)苯基]亞碸、雙[4-(3-馬來醯亞胺基苯氧基)苯基]碸、雙[4-(4-馬來醯亞胺基苯氧基)苯基]碸、雙[4-(3-馬來醯亞胺基苯氧基)苯基]醚、雙[4-(4-馬來醯亞胺基苯氧基)苯基]醚、1,4-雙[4-(4-馬來醯亞胺基苯氧基)-α,α-二甲基苯甲基]苯、1,3-雙[4-(4-馬來醯亞胺基苯氧基)-α,α-二甲基苯甲基]苯、1,4-雙[4-(3-馬來醯亞胺基苯氧基)-α,α-二甲基苯甲基]苯、1,3-雙[4-(3-馬來醯亞胺基苯氧基)-α,α-二甲基苯甲基]苯、1,4-雙[4-(4-馬來醯亞胺基苯氧基)-3,5-二甲基-α,α-二甲基苯甲基]苯、1,3-雙[4-(4-馬來醯亞胺基苯氧基)-3,5-二甲基-α,α-二甲基苯甲基]苯、1,4-雙[4-(3-馬來醯亞胺基苯氧基)-3,5-二甲基-α,α-二甲基苯甲基]苯、1,3-雙[4-(3-馬來醯亞胺基苯氧基)-3,5-二甲基-α,α-二甲基苯甲基]苯、聚苯基甲烷馬來醯亞胺等含芳香族烴基馬來醯亞胺。Specific examples of the maleimide compound (a1) include N,N'-ethylidenebismaleimide, N,N'-hexamethylenebismaleimide, bis(4 -Maleiminocyclohexyl)methane, 1,4-bis(maleiminomethyl)cyclohexane and other aliphatic hydrocarbon-containing maleimide; N,N'-(1,3 -phenylene) bismaleimide, N,N'-[1,3-(2-methylphenylene)]bismaleimide, N,N'-[1,3-( 4-methylphenylene)]bismaleimide, N,N'-(1,4-phenylene)bismaleimide, bis(4-maleimidophenyl) Methane, bis(3-methyl-4-maleimidophenyl)methane, 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethane bis Maleimide, bis(4-maleimidophenyl) ether, bis(4-maleimidophenyl)sulfide, bis(4-maleimidophenyl)sulfide Ether, bis(4-maleimidophenyl)ketone, 1,4-bis(4-maleimidophenyl)cyclohexane, 1,4-bis(maleimidophenyl) Methyl)cyclohexane, 1,3-bis(4-maleiminophenoxy)benzene, 1,3-bis(3-maleiminophenoxy)benzene, bis[4 -(3-maleimidophenoxy)phenyl]methane, bis[4-(4-maleimidophenoxy)phenyl]methane, 1,1-bis[4-( 3-Maleimidophenoxy)phenyl]ethane, 1,1-bis[4-(4-maleimidophenoxy)phenyl]ethane, 1,2-bis [4-(3-maleiminophenoxy)phenyl]ethane, 1,2-bis[4-(4-maleimidophenoxy)phenyl]ethane, 2 ,2-bis[4-(3-maleimidophenoxy)phenyl]propane, 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane , 2,2-bis[4-(3-maleiminophenoxy)phenyl]butane, 2,2-bis[4-(4-maleimidophenoxy)benzene yl]butane, 2,2-bis[4-(3-maleiminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropane, 2,2- Bis[4-(4-maleiminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropane, 4,4-bis(3-maleimide phenyloxy)biphenyl, 4,4-bis(4-maleiminophenoxy)biphenyl, bis[4-(3-maleiminophenoxy)phenyl]one , bis[4-(4-maleiminophenoxy)phenyl]one, 2,2'-bis(4-maleimidophenyl) disulfide, bis(4-maleiminophenyl) Leimidophenoxy) disulfide, bis[4-(3-maleiminophenoxy)phenyl] sulfide, bis[4-(4-maleiminophenoxy) base)phenyl] sulfide, bis[4-(3-maleiminophenoxy)phenyl]sulfoxide, bis[4-(4-maleiminophenoxy)phenyl ]Shenyl, bis[4-(3-maleiminophenoxy)phenyl]sine, bis[4-(4-maleiminophenoxy)phenyl]sine, bis[ 4-(3-maleiminophenoxy)phenyl] ether, bis[4-(4-maleimidophenoxy)phenyl] ether, 1,4-bis[4- (4-maleiminophenoxy)-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-maleimidophenoxy)-α ,α-dimethylbenzyl]benzene, 1,4-bis[4-(3-maleiminophenoxy)-α,α-dimethylbenzyl]benzene, 1,3 -Bis[4-(3-maleimidophenoxy)-α,α-dimethylbenzyl]benzene, 1,4-bis[4-(4-maleimidophenoxy)-α,α-dimethylbenzyl]benzene Oxy)-3,5-dimethyl-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-maleiminophenoxy)-3,5 -Dimethyl-α,α-dimethylbenzyl]benzene, 1,4-bis[4-(3-maleiminophenoxy)-3,5-dimethyl-α, α-dimethylbenzyl]benzene, 1,3-bis[4-(3-maleiminophenoxy)-3,5-dimethyl-α,α-dimethylbenzyl base] benzene, polyphenylmethane maleimide and other aromatic hydrocarbon-containing maleimide.
此等之中,從反應率高、能夠更加高耐熱性化這樣的觀點來看,較佳是雙(4-馬來醯亞胺基苯基)甲烷、雙(4-馬來醯亞胺基苯基)碸、雙(4-馬來醯亞胺基苯基)硫醚、雙(4-馬來醯亞胺基苯基)二硫醚、N,N’-(1,3-伸苯基)雙馬來醯亞胺、2,2-雙[4-(4-馬來醯亞胺基苯氧基)苯基]丙烷,從價廉這樣的觀點來看,較佳是雙(4-馬來醯亞胺基苯基)甲烷、N,N’-(1,3-伸苯基)雙馬來醯亞胺,從對溶劑的溶解性的觀點來看,特佳是雙(4-馬來醯亞胺基苯基)甲烷。 馬來醯亞胺化合物(a1)可單獨使用1種,且亦可併用2種以上。 Among these, bis(4-maleimidophenyl)methane and bis(4-maleimidophenyl)methane are preferred from the viewpoint of high reaction rate and the ability to achieve higher heat resistance. Phenyl)sulfide, bis(4-maleimidophenyl) sulfide, bis(4-maleimidophenyl) disulfide, N,N'-(1,3-phenylene) base) bismaleimide and 2,2-bis[4-(4-maleiminophenoxy)phenyl]propane. From the viewpoint of low cost, bis(4 -Maleimidophenyl)methane, N,N'-(1,3-phenylene)bismaleimide, particularly preferably bis(4) from the viewpoint of solubility in solvents -Maleimidophenyl)methane. One type of maleimide compound (a1) may be used alone, or two or more types may be used in combination.
(單胺化合物(a2)) 單胺化合物(a2)為由下述通式(a2-1)表示的單胺化合物。 (Monoamine compound (a2)) The monoamine compound (a2) is a monoamine compound represented by the following general formula (a2-1).
上述通式(a2-1)中,R A4表示從羥基、羧基及磺酸基之中選出的酸性取代基,R A5表示碳數1~5的烷基或鹵素原子,t為1~5的整數,u為0~4的整數,且滿足1≦t+u≦5,其中,當t為2~5的整數時,複數個R A4可相同且亦可不同,此外,當u為2~4的整數時,複數個R A5可相同且亦可不同。 從溶解性及反應性的觀點來看,作為R A4表示的酸性取代基,以羥基、羧基為佳,亦考慮到耐熱性時,以羥基較佳。 t為1~5的整數,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,t以1~3的整數為佳,以1或2較佳,以1更佳。 作為R A5表示的碳數1~5的烷基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。該烷基以碳數1~3的烷基為佳。 作為R A5表示的鹵素原子,可舉例如:氟原子、氯原子、溴原子、碘原子等。 u為0~4的整數,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,以0~3的整數為佳,以0~2的整數較佳,以0或1更佳,以0特佳。 從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,作為單胺化合物(a2),較佳是由下述通式(a2-2)或(a2-3)表示的單胺化合物,更佳是由下述通式(a2-2)表示的單胺化合物。其中,通式(a2-2)及(a2-3)中,R A4、R A5及u是與通式(a2-1)中的R A4、R A5及u相同,較佳例亦相同。 In the above general formula (a2-1), R A4 represents an acidic substituent selected from a hydroxyl group, a carboxyl group and a sulfonic acid group, R A5 represents an alkyl group having 1 to 5 carbon atoms or a halogen atom, and t is 1 to 5. Integer, u is an integer from 0 to 4, and satisfies 1≦t+u≦5. When t is an integer from 2 to 5, the plural R A4 can be the same or different. In addition, when u is an integer from 2 to 4, When it is an integer, the plural RA A5 may be the same or different. From the viewpoint of solubility and reactivity, the acidic substituent represented by R A4 is preferably a hydroxyl group or a carboxyl group, and when heat resistance is also taken into consideration, a hydroxyl group is preferably used. t is an integer from 1 to 5. From the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties, t is 1 to 3 The integer is better, 1 or 2 is better, 1 is better. Examples of the alkyl group having 1 to 5 carbon atoms represented by R A5 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n-pentyl, and the like. The alkyl group is preferably an alkyl group having 1 to 3 carbon atoms. Examples of the halogen atom represented by R A5 include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and the like. u is an integer from 0 to 4. From the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability and throwing properties, u is an integer from 0 to 3. An integer is preferred, an integer from 0 to 2 is preferred, 0 or 1 is more preferred, and 0 is particularly preferred. From the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties, the following is preferred as the monoamine compound (a2): The monoamine compound represented by the general formula (a2-2) or (a2-3) is more preferably a monoamine compound represented by the following general formula (a2-2). Among them, R A4 , R A5 and u in the general formula (a2-2) and (a2-3) are the same as R A4 , R A5 and u in the general formula (a2-1), and the preferred examples are also the same.
作為單胺化合物(a2),可舉例如:鄰胺基苯酚、間胺基苯酚、對胺基苯酚、鄰胺基苯甲酸、間胺基苯甲酸、對胺基苯甲酸、鄰胺基苯磺酸、間胺基苯磺酸、對胺基苯磺酸、3,5-二羥基苯胺、3,5-二羧基苯胺等具有酸性取代基之單胺化合物。 此等之中,從溶解性及反應性的觀點來看,較佳是間胺基苯酚、對胺基苯酚、對胺基苯甲酸、3,5-二羥基苯胺,從耐熱性的觀點來看,較佳是鄰胺基苯酚、間胺基苯酚、對胺基苯酚,亦考慮到介電特性、低熱膨脹性及製造成本時,更佳是對胺基苯酚。 單胺化合物(a2)可單獨使用1種,且亦可併用2種以上。 Examples of the monoamine compound (a2) include o-aminophenol, m-aminophenol, p-aminophenol, anthranilic acid, m-aminobenzoic acid, p-aminobenzoic acid, and o-aminobenzene sulfonate. Acid, m-aminobenzenesulfonic acid, p-aminobenzenesulfonic acid, 3,5-dihydroxyaniline, 3,5-dicarboxyaniline and other monoamine compounds with acidic substituents. Among these, m-aminophenol, p-aminophenol, p-aminobenzoic acid, and 3,5-dihydroxyaniline are preferred from the viewpoint of solubility and reactivity, and from the viewpoint of heat resistance , o-aminophenol, meta-aminophenol, and p-aminophenol are preferred, and p-aminophenol is more preferred when considering dielectric properties, low thermal expansion and manufacturing cost. The monoamine compound (a2) may be used individually by 1 type, and may use 2 or more types together.
(二胺化合物(a3)) 二胺化合物(a3)為由下述通式(a3-1)表示的二胺化合物。 通式(a3-1)中,X A2表示碳數1~3的脂肪族烴基或-O-,R A6及R A7各自獨立地表示碳數1~5的烷基、鹵素原子、羥基、羧基、或磺酸基,v及w各自獨立地為0~4的整數。 (Diamine compound (a3)) The diamine compound (a3) is a diamine compound represented by the following general formula (a3-1). In General Formula ( a3-1 ) , , or a sulfonic acid group, v and w are each independently an integer from 0 to 4.
作為X A2表示的碳數1~3的脂肪族烴基,可舉例如:亞甲基、伸乙基、伸丙基、亞丙基等。 作為X A2,以亞甲基為佳。 作為R A6及R A7表示的碳數1~5的烷基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。該烷基以碳數1~3的烷基為佳。 v及w以0~2的整數為佳,以0或1較佳,以0更佳。 Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms represented by X A2 include a methylene group, an ethylene group, a propylene group, a propylene group, and the like. As X A2 , methylene is preferred. Examples of the alkyl group having 1 to 5 carbon atoms represented by R A6 and R A7 include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n-pentyl Key et al. The alkyl group is preferably an alkyl group having 1 to 3 carbon atoms. v and w are preferably integers from 0 to 2, preferably 0 or 1, and more preferably 0.
作為二胺化合物(a3),較佳是由下述通式(a3-1’)表示的二胺化合物。 通式(a3-1’)中,X A2、R A6、R A7、v及w與前述通式(a3-1)中的X A2、R A6、R A7、v及w相同,較佳態樣亦相同。 As the diamine compound (a3), a diamine compound represented by the following general formula (a3-1') is preferred. In the general formula (a3-1'), X A2 , R A6 , R A7 , v and w are the same as X A2 , R A6 , R A7 , v and w in the aforementioned general formula (a3-1), and the preferred state is Same thing.
作為二胺化合物(a3),具體而言,可舉例如:4,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基乙烷、4,4’-二胺基二苯基丙烷、2,2’-雙[4,4’-二胺基二苯基]丙烷、3,3’-二甲基-4,4’-二胺基二苯基甲烷、3,3’-二乙基-4,4’-二胺基二苯基甲烷、3,3’-二甲基-4,4’-二胺基二苯基乙烷、3,3’-二乙基-4,4’-二胺基二苯基乙烷、4,4’-二胺基二苯基醚、4,4’-二胺基二苯基硫醚、3,3’-二羥基-4,4’-二胺基二苯基甲烷、2,2’,6,6’-四甲基-4,4’-二胺基二苯基甲烷、3,3’-二氯-4,4’-二胺基二苯基甲烷、3,3’-二溴-4,4’-二胺基二苯基甲烷、2,2’,6,6’-四甲基氯-4,4’-二胺基二苯基甲烷、2,2’,6,6’-四溴-4,4’-二胺基二苯基甲烷等。此等之中,從價廉這樣的觀點來看,較佳是4,4’-二胺基二苯基甲烷、3,3’-二乙基-4,4’-二胺基二苯基甲烷,從對溶劑的溶解性的觀點看,更佳是4,4’-二胺基二苯基甲烷。Specific examples of the diamine compound (a3) include: 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylethane, and 4,4'-diamine. diphenylpropane, 2,2'-bis[4,4'-diaminodiphenyl]propane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3 ,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylethane, 3,3'-di Ethyl-4,4'-diaminodiphenylethane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,3'-di Hydroxy-4,4'-diaminodiphenylmethane, 2,2',6,6'-tetramethyl-4,4'-diaminodiphenylmethane, 3,3'-dichloro- 4,4'-Diaminodiphenylmethane, 3,3'-dibromo-4,4'-Diaminodiphenylmethane, 2,2',6,6'-Tetramethylchloride-4 ,4'-diaminodiphenylmethane, 2,2',6,6'-tetrabromo-4,4'-diaminodiphenylmethane, etc. Among these, from the viewpoint of low cost, 4,4'-diaminodiphenylmethane and 3,3'-diethyl-4,4'-diaminodiphenyl are preferred. From the viewpoint of solubility in solvents, methane is more preferably 4,4'-diaminodiphenylmethane.
馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的反應,較佳是藉由下述方式來實施:較佳是在有機溶劑存在下,在反應溫度70~200℃使其進行反應0.1~10小時。 反應溫度以70~160℃較佳,以70~130℃更佳,以80~120℃特佳。 反應時間以1~6小時較佳,以1~4小時更佳。 The reaction of the maleimine compound (a1), the monoamine compound (a2) and the diamine compound (a3) is preferably carried out in the following manner: preferably in the presence of an organic solvent, at a reaction temperature of 70 The reaction is carried out at ~200°C for 0.1 to 10 hours. The reaction temperature is preferably 70 to 160°C, more preferably 70 to 130°C, and particularly preferably 80 to 120°C. The reaction time is preferably 1 to 6 hours, and more preferably 1 to 4 hours.
(馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的使用量) 馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的反應中,三者的使用量較佳是:單胺化合物(a2)與二胺化合物(a3)具有的一級胺基當量[記載為-NH 2基當量]的合計與馬來醯亞胺化合物(a1)的馬來醯亞胺基當量之間的關係滿足下述式。 0.1≦[馬來醯亞胺基當量]/[-NH 2基當量的合計]≦10 藉由將[馬來醯亞胺基當量]/[-NH 2基當量的合計]設為0.1以上,便能夠不降低凝膠化及耐熱性,並且,藉由將[馬來醯亞胺基當量]/[-NH 2基當量的合計]設為10以下,便能夠不降低對有機溶劑的溶解性、金屬箔黏著性及耐熱性,故較佳。 從相同的觀點來看,更佳是滿足下述式。 1≦[馬來醯亞胺基當量]/[-NH 2基當量的合計]≦9 更佳是滿足下述式。 2≦[馬來醯亞胺基當量]/[-NH 2基當量的合計]≦8 (Amounts of maleimine compound (a1), monoamine compound (a2), and diamine compound (a3) used) Maleimine compound (a1), monoamine compound (a2), and diamine compound (a3) ), the preferred usage amounts of the three are: the sum of the primary amine group equivalents [recorded as -NH 2 group equivalents] of the monoamine compound (a2) and the diamine compound (a3) and the maleimine The relationship between the maleimide group equivalents of the compound (a1) satisfies the following formula. 0.1≦[maleimide group equivalent]/[total amount of −NH 2 group equivalent]≦10 By setting [maleimide group equivalent]/[total amount of −NH 2 group equivalent] to 0.1 or more, It is possible to prevent gelation and heat resistance from being reduced, and by setting [maleimide group equivalent]/[total -NH 2 group equivalent] to 10 or less, it is possible to prevent solubility in organic solvents from being reduced. , metal foil adhesion and heat resistance, so it is better. From the same viewpoint, it is more preferable to satisfy the following formula. 1≦[maleimide group equivalent]/[total of −NH 2 group equivalents]≦9 More preferably, the following formula is satisfied. 2≦[Maleimide group equivalent]/[Total of -NH 2 group equivalents]≦8
(有機溶劑) 如前所述,馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的反應,較佳是在有機溶劑中進行。 作為有機溶劑,只要不會對該反應造成不良影響,即無特別限制。可舉例如:乙醇、丙醇、丁醇、甲基賽璐蘇、丁基賽璐蘇、丙二醇單甲基醚等醇系溶劑;丙酮、甲基乙基酮、甲基異丁酮、環己酮等酮系溶劑;四氫呋喃等醚系溶劑;甲苯、二甲苯、三甲苯等芳香族系溶劑;包含二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮等醯胺系溶劑在內的含氮原子溶劑;包含二甲基亞碸等亞碸系溶劑在內的含硫原子溶劑;乙酸乙酯、γ-丁內酯等酯系溶劑等。此等之中,從溶解性的觀點來看,以醇系溶劑、酮系溶劑、酯系溶劑為佳,從低毒性這樣的觀點來看,較佳是環己酮、丙二醇單甲基醚、甲基賽璐蘇、γ-丁內酯,亦考慮到揮發性高而在製造預浸體時不容易殘留成為殘留溶劑時,更佳是環己酮、丙二醇單甲基醚、二甲基乙醯胺,特佳是二甲基乙醯胺。 有機溶劑可單獨使用1種,且亦可併用2種以上。 有機溶劑的使用量無特別限制,從溶解性及反應效率的觀點來看,相對於馬來醯亞胺化合物(a1)與單胺化合物(a2)與二胺化合物(a3)的合計100質量份,只要使有機溶劑的使用量成為下述量即可:較佳為25~1,000質量份,更佳為40~700質量份,進一步更佳為60~250質量份。藉由相對於馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的合計100質量份,將有機溶劑的使用量設為25質量份,便容易確保溶解性,藉由相對於馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的合計100質量份,將有機溶劑的使用量設為1,000質量份以下,便容易抑制反應效率大幅降低。 (organic solvent) As mentioned above, the reaction of the maleimine compound (a1), the monoamine compound (a2) and the diamine compound (a3) is preferably carried out in an organic solvent. The organic solvent is not particularly limited as long as it does not adversely affect the reaction. Examples include: alcohol solvents such as ethanol, propanol, butanol, methylcellulose, butylcellulose, propylene glycol monomethyl ether; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexane Ketone solvents such as ketones; ether solvents such as tetrahydrofuran; aromatic solvents such as toluene, xylene, and trimethylbenzene; including amides such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone Nitrogen atom-containing solvents including dimethyl tyrosine-based solvents; sulfur atom-containing solvents including dimethyl tyrosine-based solvents; ester-based solvents such as ethyl acetate and γ-butyrolactone, etc. Among these, from the viewpoint of solubility, alcohol-based solvents, ketone-based solvents, and ester-based solvents are preferred, and from the viewpoint of low toxicity, cyclohexanone, propylene glycol monomethyl ether, and Methylcellulose and γ-butyrolactone are also more preferred when considering their high volatility and not being easily left as residual solvents when manufacturing prepregs, cyclohexanone, propylene glycol monomethyl ether, and dimethyl ethyl ether. Amide, particularly dimethylacetamide. One type of organic solvent may be used alone, or two or more types may be used in combination. The usage amount of the organic solvent is not particularly limited. From the viewpoint of solubility and reaction efficiency, the amount is 100 parts by mass in total of the maleimine compound (a1), the monoamine compound (a2), and the diamine compound (a3). , as long as the usage amount of the organic solvent is the following amount: preferably 25 to 1,000 parts by mass, more preferably 40 to 700 parts by mass, still more preferably 60 to 250 parts by mass. By setting the usage amount of the organic solvent to 25 parts by mass relative to a total of 100 parts by mass of the maleimine compound (a1), the monoamine compound (a2), and the diamine compound (a3), it is easy to ensure solubility. , it can be easily suppressed by setting the usage amount of the organic solvent to 1,000 parts by mass or less based on a total of 100 parts by mass of the maleimine compound (a1), the monoamine compound (a2), and the diamine compound (a3). Reaction efficiency is greatly reduced.
(反應觸媒) 馬來醯亞胺化合物(a1)、單胺化合物(a2)及二胺化合物(a3)的反應,可因應需要來在反應觸媒存在下實施。作為反應觸媒,可舉例如:三乙胺、吡啶、三丁胺等胺系觸媒;甲基咪唑、苯基咪唑等咪唑系觸媒;三苯膦等磷系觸媒等。 反應觸媒可單獨使用1種,且亦可併用2種以上。 反應觸媒的使用量並無特別限制,相對於馬來醯亞胺化合物(a1)與單胺化合物(a2)的合計100質量份,以0.001~5質量份為佳。 (reaction catalyst) The reaction of the maleimine compound (a1), the monoamine compound (a2) and the diamine compound (a3) can be carried out in the presence of a reaction catalyst as needed. Examples of reaction catalysts include amine catalysts such as triethylamine, pyridine, and tributylamine; imidazole catalysts such as methylimidazole and phenylimidazole; and phosphorus catalysts such as triphenylphosphine. One type of reaction catalyst may be used alone, or two or more types may be used in combination. The usage amount of the reaction catalyst is not particularly limited, but is preferably 0.001 to 5 parts by mass relative to a total of 100 parts by mass of the maleimide compound (a1) and the monoamine compound (a2).
<(B)環氧樹脂> (B)成分為環氧樹脂(以下有時稱為環氧樹脂(B)),以一分子中具有至少2個環氧基之環氧樹脂為佳。 作為一分子中具有至少2個環氧基之環氧樹脂,可舉例如:縮水甘油基醚型環氧樹脂、縮水甘油基胺型環氧樹脂、縮水甘油酯型環氧樹脂等。此等之中,以縮水甘油基醚型環氧樹脂為佳。 環氧樹脂亦能夠依主骨架不同來分類為各種環氧樹脂,上述各型的環氧樹脂中,分別能夠進一步分類為:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂等雙酚型環氧樹脂;聯苯芳烷基酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、烷基苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘酚烷基苯酚共聚酚醛清漆型環氧樹脂、萘酚芳烷基甲酚共聚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂;二苯乙烯型環氧樹脂;含三嗪骨架環氧樹脂;含茀骨架環氧樹脂;萘型環氧樹脂;蒽型環氧樹脂;三苯基甲烷型環氧樹脂;聯苯型環氧樹脂;二甲苯型環氧樹脂;雙環戊二烯型環氧樹脂等脂環式環氧樹脂等。 此等之中,從高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性的觀點來看,較佳是從由雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基酚醛清漆型環氧樹脂及雙環戊二烯型環氧樹脂所組成之群組中選出的至少1種,從低熱膨脹性及高玻璃轉移溫度的觀點來看,更佳是從由甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基酚醛清漆型環氧樹脂及苯酚酚醛清漆型環氧樹脂所組成之群組中選出的至少1種,更佳是甲酚酚醛清漆型環氧樹脂。 環氧樹脂(B)可單獨使用1種,且亦可併用2種以上。 <(B) Epoxy resin> Component (B) is an epoxy resin (hereinafter sometimes referred to as epoxy resin (B)), and an epoxy resin having at least two epoxy groups in one molecule is preferred. Examples of the epoxy resin having at least two epoxy groups in one molecule include glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, glycidyl ester type epoxy resin, and the like. Among these, glycidyl ether type epoxy resin is preferred. Epoxy resins can also be classified into various epoxy resins based on different main skeletons. Among the above types of epoxy resins, they can be further classified into: bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S-type epoxy resin and other bisphenol-type epoxy resins; biphenyl aralkyl novolak-type epoxy resin, phenol novolac-type epoxy resin, alkylphenol novolak-type epoxy resin, cresol novolak-type epoxy resin Resin, naphthol alkylphenol copolymer novolak type epoxy resin, naphthol aralkyl cresol copolymer novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, etc. Novolac type epoxy resin; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; fluorine skeleton-containing epoxy resin; naphthalene-type epoxy resin; anthracene-type epoxy resin; triphenylmethane-type epoxy resin ; Biphenyl-type epoxy resin; xylene-type epoxy resin; dicyclopentadiene-type epoxy resin and other alicyclic epoxy resins, etc. Among these, from the viewpoint of high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, formability, and throwing properties, those made of bisphenol F are preferred. type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl novolac type ring At least one selected from the group consisting of oxy resin and dicyclopentadiene-type epoxy resin, preferably from the viewpoint of low thermal expansion and high glass transition temperature, a cresol novolac-type epoxy resin At least 1 selected from the group consisting of, naphthalene-type epoxy resin, anthracene-type epoxy resin, biphenyl-type epoxy resin, biphenyl aralkyl novolac-type epoxy resin and phenol novolak-type epoxy resin , preferably cresol novolak type epoxy resin. Epoxy resin (B) may be used individually by 1 type, and may use 2 or more types together.
環氧樹脂(B)的環氧當量以100~500 g/eq為佳,以120~400 g/eq較佳,以140~300 g/eq更佳,以170~240 g/eq特佳。 此處,環氧當量為每個環氧基的樹脂的當量(g/eq),能夠依照JIS K 7236(2001年)所規定的方法來進行測定。具體而言,能夠藉由下述方式來求出:使用三菱化學Analytech股份有限公司製的自動滴定裝置「GT-200型」,並將環氧樹脂2 g秤量至200 mL燒杯中之後,滴入甲基乙基酮90 mL,並以超音波洗淨器來溶解後,添加冰醋酸10 mL及溴化鯨蠟基三甲基銨1.5 g,並以0.1 mol/L的過氯酸/乙酸溶液來滴定。 作為環氧樹脂(B)的市售物,可舉例如:甲酚酚醛清漆型環氧樹脂「EPICLON(註冊商標) N-673」(DIC股份有限公司製,環氧當量:205~215 g/eq)、萘型環氧樹脂「HP-4032」(三菱化學股份有限公司製,環氧當量:152 g/eq)、聯苯型環氧樹脂「YX-4000」(三菱化學股份有限公司製,環氧當量:186 g/eq)、雙環戊二烯型環氧樹脂「HP-7200H」(DIC股份有限公司製,環氧當量:280 g/eq)等。再者,環氧當量為該商品的製造公司的型錄中所記載的值。 The epoxy equivalent of the epoxy resin (B) is preferably 100 to 500 g/eq, more preferably 120 to 400 g/eq, more preferably 140 to 300 g/eq, and particularly preferably 170 to 240 g/eq. Here, the epoxy equivalent is the resin equivalent per epoxy group (g/eq), and can be measured according to the method specified in JIS K 7236 (2001). Specifically, it can be determined by using the automatic titration device "GT-200 type" manufactured by Mitsubishi Chemical Analytech Co., Ltd., weighing 2 g of epoxy resin into a 200 mL beaker, and then dripping After dissolving 90 mL of methyl ethyl ketone with an ultrasonic cleaner, add 10 mL of glacial acetic acid and 1.5 g of cetyltrimethylammonium bromide, and add 0.1 mol/L perchloric acid/acetic acid solution. to titrate. Examples of commercially available epoxy resins (B) include cresol novolak type epoxy resin "EPICLON (registered trademark) N-673" (manufactured by DIC Co., Ltd., epoxy equivalent: 205 to 215 g/ eq), naphthalene-type epoxy resin "HP-4032" (manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: 152 g/eq), biphenyl-type epoxy resin "YX-4000" (manufactured by Mitsubishi Chemical Co., Ltd., Epoxy equivalent: 186 g/eq), dicyclopentadiene epoxy resin "HP-7200H" (manufactured by DIC Co., Ltd., epoxy equivalent: 280 g/eq), etc. In addition, the epoxy equivalent is the value described in the catalog of the manufacturing company of the product.
<(C)特定共聚樹脂> (C)成分為共聚樹脂(以下有時稱為共聚樹脂(C)),其具有源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元。作為經取代的乙烯系化合物,可舉例如:芳香族乙烯系化合物、脂肪族乙烯系化合物、經官能基所取代的乙烯系化合物等。芳香族乙烯系化合物可舉例如:苯乙烯、1-甲基苯乙烯、乙烯基甲苯、二甲基苯乙烯等。作為脂肪族乙烯系化合物,可舉例如:丙烯、丁二烯、異丁烯等。作為經官能基所取代的乙烯系化合物,可舉例如:丙烯腈;丙烯酸甲酯、甲基丙烯酸甲酯等具有(甲基)丙烯醯基之化合物等。 此等之中,作為經取代的乙烯系化合物,以芳香族乙烯系化合物為佳,以苯乙烯較佳。 作為(C)成分,較佳是具有由下述通式(C-i)表示的結構單元與由下述通式(C-ii)表示的結構單元之共聚樹脂。 <(C) Specific copolymer resin> Component (C) is a copolymerized resin (hereinafter sometimes referred to as copolymerized resin (C)) having a structural unit derived from a substituted vinyl compound and a structural unit derived from maleic anhydride. Examples of substituted vinyl compounds include aromatic vinyl compounds, aliphatic vinyl compounds, vinyl compounds substituted with functional groups, and the like. Examples of the aromatic vinyl compound include styrene, 1-methylstyrene, vinyltoluene, dimethylstyrene, and the like. Examples of aliphatic vinyl compounds include propylene, butadiene, isobutylene, and the like. Examples of vinyl compounds substituted with functional groups include acrylonitrile; compounds having (meth)acrylyl groups such as methyl acrylate and methyl methacrylate. Among these, as the substituted vinyl compound, an aromatic vinyl compound is preferred, and styrene is preferred. As component (C), a copolymer resin having a structural unit represented by the following general formula (C-i) and a structural unit represented by the following general formula (C-ii) is preferred.
式(C-i)中,R C1為氫原子或碳數1~5的烷基,R C2為碳數1~5的烷基、碳數2~5的烯基、碳數6~20的芳基、羥基、或(甲基)丙烯醯基;x為0~3的整數;其中,當x為2或3時,複數個R C2可相同且亦可不同。 In formula (Ci), R C1 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R C2 is an alkyl group having 1 to 5 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, or an aryl group having 6 to 20 carbon atoms. , hydroxyl group, or (meth)acrylyl group; x is an integer from 0 to 3; where, when x is 2 or 3, the plurality of R C2 may be the same or different.
作為R C1及R C2表示的碳數1~5的烷基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。該烷基以碳數1~3的烷基為佳。 作為R C2表示的碳數2~5的烯基,可舉例如:烯丙基、巴豆基等。該烯基以碳數3~5的烯基為佳,以碳數3或4的烯基較佳。 作為R C2表示的碳數6~20的芳基,可舉例如:苯基、萘基、蒽基、聯苯基等。該芳基以碳數6~12的芳基為佳,以碳數6~10的芳基較佳。 x以0或1為佳,以0較佳。 由通式(C-i)表示的結構單元中,較佳是R C1為氫原子且x為0的由下述通式(C-i-1)表示的結構單元也就是源自苯乙烯的結構單元。 Examples of the alkyl group having 1 to 5 carbon atoms represented by R C1 and R C2 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n-pentyl Key et al. The alkyl group is preferably an alkyl group having 1 to 3 carbon atoms. Examples of the alkenyl group having 2 to 5 carbon atoms represented by R C2 include allyl group, crotyl group, and the like. The alkenyl group is preferably an alkenyl group having 3 to 5 carbon atoms, and more preferably an alkenyl group having 3 or 4 carbon atoms. Examples of the aryl group having 6 to 20 carbon atoms represented by R C2 include phenyl group, naphthyl group, anthracenyl group, biphenyl group, and the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and more preferably an aryl group having 6 to 10 carbon atoms. x is preferably 0 or 1, and 0 is better. Among the structural units represented by the general formula (Ci), a structural unit represented by the following general formula (Ci-1) in which R C1 is a hydrogen atom and x is 0, that is, a structural unit derived from styrene, is preferred.
共聚樹脂(C)中,源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元的含有比例也就是源自經取代的乙烯系化合物的結構單元/源自馬來酸酐的結構單元的mol比,以1~9為佳,以2~9較佳,以3~8更佳,以3~7特佳。此外,由前述通式(C-i)表示的結構單元相對於由前述通式(C-ii)表示的結構單元的含有比例也就是(C-i)/(C-ii)的mol比,亦同樣地以1~9為佳,以2~9較佳,以3~8更佳,以3~7特佳。若此等的mol比為1以上、較佳為2以上,則有介電特性的改善效果會更充分的傾向,若此等的mol比為9以下,則有相容性良好的傾向。 共聚樹脂(C)中,源自經取代的乙烯系化合物的結構單元與源自馬來酸酐的結構單元的合計含量、及由通式(C-i)表示的結構單元與由式(C-ii)表示的結構單元的合計含量,分別以50質量%以上為佳,以70質量%以上較佳,以90質量%以上更佳,以實質上為100質量%特佳。 共聚樹脂(C)的重量平均分子量(Mw)以4,500~18,000為佳,以5,000~18,000較佳,以6,000~17,000進一步較佳,以8,000~16,000更佳,以8,000~15,000特佳,以9,000~13,000最佳。 In the copolymer resin (C), the content ratio of the structural units derived from the substituted vinyl compound and the structural units derived from maleic anhydride is the structural unit derived from the substituted vinyl compound/the structural units derived from maleic anhydride. The molar ratio of the structural units is preferably 1 to 9, more preferably 2 to 9, more preferably 3 to 8, and particularly preferably 3 to 7. In addition, the content ratio of the structural unit represented by the aforementioned general formula (C-i) to the structural unit represented by the aforementioned general formula (C-ii), that is, the molar ratio of (C-i)/(C-ii), is also expressed as 1 to 9 is preferred, 2 to 9 is more preferred, 3 to 8 is more preferred, and 3 to 7 is particularly preferred. If the molar ratio is 1 or more, preferably 2 or more, the dielectric properties improvement effect tends to be more sufficient, and if the molar ratio is 9 or less, the compatibility tends to be good. In the copolymer resin (C), the total content of the structural unit derived from the substituted vinyl compound and the structural unit derived from maleic anhydride, and the structural unit represented by the general formula (C-i) and the structural unit represented by the formula (C-ii) The total content of the structural units represented is preferably 50 mass% or more, more preferably 70 mass% or more, more preferably 90 mass% or more, and substantially 100 mass% is particularly preferred. The weight average molecular weight (Mw) of the copolymer resin (C) is preferably 4,500 to 18,000, more preferably 5,000 to 18,000, more preferably 6,000 to 17,000, more preferably 8,000 to 16,000, particularly preferably 8,000 to 15,000, and 9,000 ~13,000 best.
再者,藉由使用苯乙烯與馬來酸酐的共聚樹脂來使環氧樹脂低介電常數化的手法,由於若應用於印刷線路板用材料,則對基材的含浸性及銅箔剝離強度會不充分,故有一般會避免上述手法的傾向。因此,有一般亦會避免使用前述共聚樹脂(C)的傾向,但本發明是得知下述事實遂完成:雖使用前述共聚樹脂(C),但藉由含有前述(A)成分及(B)成分,即會成為一種熱硬化性樹脂組成物,其具有高耐熱性、低相對介電常數、高金屬箔黏著性、高玻璃轉移溫度及低熱膨脹性且成形性及均鍍性優異。Furthermore, by using a copolymer resin of styrene and maleic anhydride to lower the dielectric constant of the epoxy resin, if it is applied to printed wiring board materials, the impregnation of the base material and the copper foil peeling strength will be improved. will be insufficient, so there is a general tendency to avoid the above methods. Therefore, there is a general tendency to avoid the use of the aforementioned copolymer resin (C). However, the present invention was accomplished by finding out that although the aforementioned copolymer resin (C) is used, by containing the aforementioned components (A) and (B) ) component, it becomes a thermosetting resin composition with high heat resistance, low relative dielectric constant, high metal foil adhesion, high glass transition temperature, low thermal expansion, and excellent formability and throwing properties.
(共聚樹脂(C)的製造方法) 共聚樹脂(C)能夠藉由下述方式來製造:使經取代的乙烯系化合物與馬來酸酐進行共聚。 經取代的乙烯系化合物是如前所述。經取代的乙烯系化合物可單獨使用1種,且亦可併用2種以上。並且,除了前述經取代的乙烯系化合物及馬來酸酐以外,亦可使各種能夠進行聚合的成分進行共聚。 此外,可透過下述反應來將烯丙基、甲基丙烯醯基、丙烯醯基、羥基等取代基導入至該經取代的乙烯系化合物、特別是芳香族乙烯系化合物中:傅-克(Friedel-Crafts)反應;或使用鋰等金屬系觸媒來進行的反應。 (Production method of copolymer resin (C)) The copolymer resin (C) can be produced by copolymerizing a substituted vinyl compound and maleic anhydride. The substituted vinyl compound is as described above. One type of substituted vinyl compound may be used alone, or two or more types may be used in combination. Furthermore, in addition to the aforementioned substituted vinyl compound and maleic anhydride, various polymerizable components can also be copolymerized. In addition, substituents such as allyl, methacryloyl, acryloyl, and hydroxyl can be introduced into the substituted vinyl compound, especially the aromatic vinyl compound, through the following reaction: Friedel-Crafts ( Friedel-Crafts) reaction; or a reaction using a metal catalyst such as lithium.
作為共聚樹脂(C),亦能夠使用市售物。作為市售物,可舉例如:「SMA(註冊商標) 1000」(苯乙烯/馬來酸酐=1,Mw=5,000)、「SMA(註冊商標) EF30」(苯乙烯/馬來酸酐=3,Mw=9,500)、「SMA(註冊商標) EF40」(苯乙烯/馬來酸酐=4,Mw=11,000)、「SMA(註冊商標) EF60」(苯乙烯/馬來酸酐=6,Mw=11,500)、「SMA(註冊商標) EF80」(苯乙烯/馬來酸酐=8,Mw=14,400)[以上為CRAY VALLEY公司製]等。As the copolymer resin (C), a commercially available product can also be used. Examples of commercially available products include "SMA (registered trademark) 1000" (styrene/maleic anhydride = 1, Mw = 5,000) and "SMA (registered trademark) EF30" (styrene/maleic anhydride = 3, Mw=9,500), "SMA(registered trademark) EF40" (styrene/maleic anhydride=4, Mw=11,000), "SMA(registered trademark) EF60" (styrene/maleic anhydride=6, Mw=11,500) , "SMA (registered trademark) EF80" (styrene/maleic anhydride = 8, Mw = 14,400) [the above is made by CRAY VALLEY Co., Ltd.], etc.
<(D)經以胺基矽烷系耦合劑來進行處理後的氧化矽> 若使用氧化矽中的經以胺基矽烷系耦合劑來進行處理後的氧化矽(以下,有時稱為經以胺基矽烷系耦合劑來進行處理後的氧化矽(D))來作為(D)成分,則除了能夠獲得提高低熱膨脹性這樣的效果以外,由於能夠藉由提高與前述(A)~(C)成分之間的密合性來抑制氧化矽脫落,故還能夠獲得抑制由過剩量的除膠渣所造成的雷射通孔形狀變形等的效果,因此較佳。 <(D) Silicon oxide treated with aminosilane coupling agent> If silicon oxide treated with an aminosilane coupling agent among silicon oxides (hereinafter, sometimes referred to as silicon oxide (D) treated with an aminosilane coupling agent) is used as ( D) component, in addition to the effect of improving low thermal expansion, it is also possible to suppress silicon oxide from falling off by improving the adhesion with the components (A) to (C). It is better to reduce the deformation of the shape of the laser through hole caused by the excessive amount of desmear.
作為胺基矽烷系耦合劑,具體而言,較佳是具有由下述通式(D-1)表示的含矽基與胺基之矽烷耦合劑。 式(D-1),R D1為碳數1~3的烷基或碳數2~4的醯基,y為0~3的整數。 As the aminosilane-based coupling agent, specifically, a silane coupling agent having a silicon group and an amino group represented by the following general formula (D-1) is preferred. In formula (D-1), R D1 is an alkyl group having 1 to 3 carbon atoms or a hydroxyl group having 2 to 4 carbon atoms, and y is an integer of 0 to 3.
作為R D1表示的碳數1~3的烷基,可舉例如:甲基、乙基、正丙基、異丙基。此等之中,以甲基為佳。 作為R D1表示的碳數2~4的醯基,可舉例如:乙醯基、丙醯基、丙烯醯基。此等之中,以乙醯基為佳。 Examples of the alkyl group having 1 to 3 carbon atoms represented by RD1 include methyl, ethyl, n-propyl and isopropyl. Among these, methyl is preferred. Examples of the C2-C4 acyl group represented by RD1 include an acetyl group, a propyl group, and an acryl group. Among these, the acetyl group is preferred.
胺基矽烷系耦合劑可具有1個胺基,且亦可具有2個胺基,且亦可具有3個以上的胺基,通常具有1個或2個胺基。 作為具有1個胺基之胺基矽烷系耦合劑,可舉例如:3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、3-三乙氧基矽烷基-N-(1,3-二甲基亞丁基)丙基胺、[3-(三甲氧基矽烷基)丙基]胺甲酸2-丙炔酯等,但並不特別受此等所限制。 作為具有2個胺基之胺基矽烷系耦合劑,可舉例如:N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、1-[3-(三甲氧基矽烷基)丙基]脲、1-[3-(三乙氧基矽烷基)丙基]脲等,但並不特別受此等所限制。 The aminosilane coupling agent may have one amine group, may have two amine groups, or may have three or more amine groups, and usually has 1 or 2 amine groups. Examples of the aminosilane coupling agent having one amino group include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, and N-phenyl-3-amino Propyltrimethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylene)propylamine, [3-(trimethoxysilyl)propyl]carbamic acid 2- Propargyl esters, etc., but are not particularly limited thereto. Examples of the aminosilane coupling agent having two amino groups include N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, Ethyl)-3-aminopropyltrimethoxysilane, 1-[3-(trimethoxysilyl)propyl]urea, 1-[3-(triethoxysilyl)propyl]urea, etc. , but are not particularly limited by these.
雖亦能夠使用作為(D)成分以外的無機填充材料的特定氧化矽,取代經以胺基矽烷系耦合劑來進行處理後的氧化矽(D),但從前述效果的觀點來看,較佳是使用經以胺基矽烷系耦合劑來進行處理後的氧化矽(D),該特定氧化矽例如為經以特定耦合劑來進行處理後的氧化矽、未經表面處理的氧化矽等,該特定耦合劑為:環氧基矽烷系耦合劑、苯基矽烷系耦合劑、烷基矽烷系耦合劑、烯基矽烷系耦合劑、炔基矽烷系耦合劑、鹵烷基矽烷系耦合劑、矽氧烷系耦合劑、氫矽烷系耦合劑、矽氮烷系耦合劑、烷氧基矽烷系耦合劑、氯矽烷系耦合劑、(甲基)丙烯酸系矽烷系耦合劑、胺基矽烷系耦合劑、異氰脲酸基矽烷系耦合劑、脲基矽烷系耦合劑、巰基矽烷系耦合劑、硫醚矽烷系耦合劑、或異氰酸基矽烷系耦合劑等。 此外,可將經以胺基矽烷系耦合劑來進行處理後的氧化矽(D)與上述經以其它耦合劑來進行處理後的氧化矽併用。此時,相對於經以胺基矽烷系耦合劑來進行處理後的氧化矽(D)100質量份,上述經以其它耦合劑來進行處理後的氧化矽以50質量份以下為佳,以30質量份以下較佳,以15質量份以下更佳,以10質量份以下特佳,以5質量份以下最佳,但並無特別限制。 Although specific silicon oxide as an inorganic filler other than component (D) can be used instead of silicon oxide (D) treated with an aminosilane-based coupling agent, from the viewpoint of the above-mentioned effects, it is preferable. Silicon oxide (D) treated with an aminosilane coupling agent is used. The specific silicon oxide is, for example, silicon oxide treated with a specific coupling agent, silicon oxide without surface treatment, etc. Specific coupling agents are: epoxy silane coupling agent, phenyl silane coupling agent, alkyl silane coupling agent, alkenyl silane coupling agent, alkynyl silane coupling agent, haloalkyl silane coupling agent, silicon Oxane-based coupling agent, hydrogen silane-based coupling agent, silazane-based coupling agent, alkoxysilane-based coupling agent, chlorosilane-based coupling agent, (meth)acrylic-based silane-based coupling agent, aminosilane-based coupling agent , Isocyanurate silane coupling agent, ureido silane coupling agent, mercapto silane coupling agent, thioether silane coupling agent, or isocyanato silane coupling agent, etc. In addition, silicon oxide (D) treated with an aminosilane coupling agent may be used in combination with the silicon oxide treated with another coupling agent. At this time, relative to 100 parts by mass of silicon oxide (D) treated with an aminosilane coupling agent, the silicon oxide treated with other coupling agents is preferably 50 parts by mass or less, and 30 parts by mass or less. The amount is preferably not more than 15 parts by mass, more preferably not more than 10 parts by mass, and most preferably not more than 5 parts by mass, but is not particularly limited.
作為前述氧化矽,可舉例如:以濕式法來製造而含水率高的沉積氧化矽;及,以乾式法來製造而幾乎不含鍵結水等的乾式法氧化矽。作為乾式法氧化矽,可進一步依製造法不同來舉例如:粉碎氧化矽、發煙氧化矽、熔融氧化矽(熔融球狀氧化矽)等。此等之中,從低熱膨脹性及填充在樹脂中時的高流動性的觀點來看,以熔融氧化矽為佳。 該氧化矽的平均粒徑並無特別限制,以0.1~10 μm為佳,以0.1~6 μm較佳,以0.1~3 μm更佳,以1~3 μm特佳。將氧化矽的平均粒徑設為0.1 μm以上,便能夠使高度填充時的流動性保持良好,並且,將氧化矽的平均粒徑設為10 μm以下,便能夠降低粗大粒子的混入機率而抑制起因於粗大粒子的不良情形發生。此處,所謂平均粒徑,是指將粒子的總體積設為100%並藉由粒徑來求出累積粒度分布曲線時相當於體積50%的點的粒徑,能夠以使用雷射繞射散射法的粒度分布測定裝置等來進行測定。 此外,該氧化矽的比表面積以4 cm 2/g以上為佳,以4~9 cm 2/g較佳,以5~7 cm 2/g更佳。 Examples of the silicon oxide include deposited silicon oxide produced by a wet process and having a high moisture content, and dry process silicon oxide produced by a dry process and containing almost no bonded water or the like. Examples of dry process silicon oxide include, depending on the production method, grinded silicon oxide, fumed silicon oxide, fused silicon oxide (molten spherical silicon oxide), and the like. Among these, molten silicon oxide is preferred from the viewpoint of low thermal expansion and high fluidity when filled in resin. The average particle size of the silicon oxide is not particularly limited, but is preferably 0.1 to 10 μm, more preferably 0.1 to 6 μm, more preferably 0.1 to 3 μm, and particularly preferably 1 to 3 μm. By setting the average particle size of silicon oxide to 0.1 μm or more, it is possible to maintain good fluidity during high filling, and by setting the average particle size of silicon oxide to 10 μm or less, it is possible to reduce the probability of mixing coarse particles and suppress Undesirable situations caused by coarse particles occur. Here, the average particle diameter refers to the particle diameter corresponding to the point corresponding to 50% of the volume when the cumulative particle size distribution curve is calculated using the particle diameter, assuming that the total volume of the particles is 100%. It can be determined using laser diffraction. The particle size distribution measuring device of the scattering method can be used for measurement. In addition, the specific surface area of the silicon oxide is preferably 4 cm 2 /g or more, preferably 4 to 9 cm 2 /g, and more preferably 5 to 7 cm 2 /g.
<(E)硬化劑> 熱硬化性樹脂組成物[I]可進一步含有硬化劑來作為(E)成分(以下,有時稱為硬化劑(E))。作為硬化劑(E),可舉例如:雙氰胺;乙二胺、二伸乙三胺、三伸乙四胺、四伸乙五胺、六亞甲基二胺、二乙胺基丙基胺、四甲基胍、三乙醇胺等除了雙氰胺以外的鏈狀脂肪族胺;異佛酮二胺、二胺基二環己基甲烷、雙(胺基甲基)環己烷、雙(4-胺基-3-甲基二環己基)甲烷、N-胺基乙基哌嗪、3,9-雙(3-胺基丙基)-2,4,8,10-四氧雜螺[5.5]十一烷等環狀脂肪族胺;苯二甲胺、苯二胺、二胺基二苯基甲烷、二胺基二苯基碸等芳香族胺等。此等之中,從金屬箔黏著性及低熱膨脹性的觀點來看,以雙氰胺為佳。 該雙氰胺是如H 2N-C(=NH)-NH-CN所示,熔點通常為205~215℃,純度更高的雙氰胺的熔點為207~212℃。雙氰胺為結晶性物質,可為斜方晶,且亦可為片狀晶。雙氰胺以純度98%以上為佳,以純度99%以上較佳,以純度99.4%以上更佳。雙氰胺能夠使用市售物,能夠使用例如:日本CARBIDE工業股份有限公司製、東京化成工業股份有限公司製、KISHIDA化學股份有限公司製、nacalai tesque股份有限公司製等的市售物。 <(E) Curing Agent> The thermosetting resin composition [I] may further contain a curing agent as the (E) component (hereinafter, may be referred to as a curing agent (E)). Examples of the hardener (E) include: dicyandiamide; ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, hexamethylenediamine, and diethylaminopropyl Amine, tetramethylguanidine, triethanolamine and other chain aliphatic amines other than dicyandiamide; isophorone diamine, diaminodicyclohexylmethane, bis(aminomethyl)cyclohexane, bis(4) -Amino-3-methyldicyclohexyl)methane, N-aminoethylpiperazine, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraxaspiro[ 5.5] cyclic aliphatic amines such as undecane; aromatic amines such as xylylenediamine, phenylenediamine, diaminodiphenylmethane, and diaminodiphenylthione. Among these, dicyandiamide is preferred from the viewpoint of metal foil adhesion and low thermal expansion. This dicyandiamide is represented by H 2 N-C (=NH)-NH-CN, and its melting point is usually 205 to 215°C. The melting point of dicyandiamide with higher purity is 207 to 212°C. Dicyandiamide is a crystalline substance, which can be orthorhombic crystals or flaky crystals. The purity of dicyandiamide is preferably at least 98%, more preferably at least 99%, and even more preferably at least 99.4%. Commercially available dicyandiamide can be used, and for example, commercially available products manufactured by Japan CARBIDE Industrial Co., Ltd., Tokyo Chemical Industry Co., Ltd., KISHIDA Chemical Co., Ltd., and Nacalai Tesque Co., Ltd. can be used.
<(F)難燃劑> 熱硬化性樹脂組成物[I]可進一步含有難燃劑來作為(F)成分(以下有時稱為難燃劑(F))。此處,雖前述硬化劑中的雙氰胺等亦具有難燃劑的效果,但在本發明中是將能夠產生硬化劑的功能的物質分類為硬化劑,而將其設為不包含在(F)成分中。 作為難燃劑,可舉例如:含有溴和氯的含鹵素系難燃劑;磷系難燃劑;胺磺酸胍、硫酸三聚氰胺、聚磷酸三聚氰胺、三聚氰胺氰脲酸酯等氮系難燃劑;環磷腈(cyclophosphazene)、聚磷腈等磷腈系難燃劑;三氧化銻等無機系難燃劑等。此等之中,以磷系難燃劑為佳。 作為磷系難燃劑,有無機系的磷系難燃劑及有機系的磷系難燃劑。 作為無機系的磷系難燃劑,可舉例如:紅磷、磷酸二氫銨、磷酸氫二銨、磷酸銨、聚磷酸銨等磷酸銨;磷醯胺等無機系含氮磷化合物;磷酸;氧化膦等。 作為有機系的磷系難燃劑,可舉例如:芳香族磷酸酯、一取代膦酸二酯、二取代次膦酸酯、二取代次膦酸的金屬鹽、有機系含氮磷化合物、環狀有機磷化合物、含磷酚樹脂等。此等之中,以芳香族磷酸酯、二取代次膦酸的金屬鹽為佳。此處,金屬鹽較佳是鋰鹽、鈉鹽、鉀鹽、鈣鹽、鎂鹽、鋁鹽、鈦鹽、鋅鹽之中的任一種,更佳是鋁鹽。有機系的磷系難燃劑之中,以芳香族磷酸酯較佳。 <(F)Flame retardant> The thermosetting resin composition [I] may further contain a flame retardant as component (F) (hereinafter, it may be referred to as a flame retardant (F)). Here, although dicyandiamide and the like in the above-mentioned hardener also have the effect of a flame retardant, in the present invention, substances that can exert the function of a hardener are classified as hardeners and are not included in ( F) Ingredients. Examples of the flame retardant include halogen-containing flame retardants containing bromine and chlorine; phosphorus-based flame retardants; and nitrogen-based flame retardants such as guanidine sulfonate, melamine sulfate, melamine polyphosphate, and melamine cyanurate. ; Phosphazene flame retardants such as cyclophosphazene and polyphosphazene; inorganic flame retardants such as antimony trioxide, etc. Among these, phosphorus-based flame retardants are preferred. As phosphorus-based flame retardants, there are inorganic phosphorus-based flame retardants and organic phosphorus-based flame retardants. Examples of inorganic phosphorus-based flame retardants include ammonium phosphates such as red phosphorus, ammonium dihydrogen phosphate, diammonium hydrogen phosphate, ammonium phosphate, and ammonium polyphosphate; inorganic nitrogen-containing phosphorus compounds such as phosphorus amide; and phosphoric acid; Phosphine oxide, etc. Examples of organic phosphorus-based flame retardants include aromatic phosphates, monosubstituted phosphonic acid diesters, disubstituted phosphinic acid esters, metal salts of disubstituted phosphinic acid, organic nitrogen-containing phosphorus compounds, cyclic Organophosphorus compounds, phosphorus-containing phenolic resins, etc. Among these, aromatic phosphates and metal salts of disubstituted phosphinic acids are preferred. Here, the metal salt is preferably any one of lithium salt, sodium salt, potassium salt, calcium salt, magnesium salt, aluminum salt, titanium salt, and zinc salt, and is more preferably an aluminum salt. Among organic phosphorus-based flame retardants, aromatic phosphates are preferred.
作為芳香族磷酸酯,可舉例如:磷酸三苯酯、磷酸三(甲苯酯)、磷酸三(二甲苯酯)、磷酸甲苯酯二苯酯、磷酸甲苯酯二(2,6-二甲苯酯)、間苯二酚雙(磷酸二苯酯)、1,3-伸苯基雙(磷酸二(2,6-二甲苯酯))、雙酚A雙(磷酸二苯酯)、1,3-伸苯基雙(磷酸二苯酯)等。 作為一取代膦酸二酯,可舉例如:苯膦酸二乙烯酯、苯膦酸二烯丙酯、苯膦酸雙(1-丁烯酯)等。 作為二取代次膦酸酯,可舉例如:二苯基次膦酸苯酯、二苯基次膦酸甲酯等。 作為二取代次膦酸的金屬鹽,可舉例如:二烷基次膦酸的金屬鹽、二烯丙基次膦酸的金屬鹽、二乙烯基次膦酸的金屬鹽、二芳基次膦酸的金屬鹽等。此等金屬鹽是如前所述,以鋰鹽、鈉鹽、鉀鹽、鈣鹽、鎂鹽、鋁鹽、鈦鹽、鋅鹽之中的任一種為佳。 作為有機系含氮磷化合物,可舉例如:雙(2-烯丙基苯氧基)磷腈、二(甲苯基)磷腈等磷腈化合物;磷酸三聚氰胺、焦磷酸三聚氰胺、聚磷酸三聚氰胺、聚磷酸蜜白胺等。 作為環狀有機磷化合物,可舉例如:9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物、10-(2,5-二羥基苯基)-9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物等。 此等之中,較佳是從芳香族磷酸酯、二取代次膦酸的金屬鹽及環狀有機磷化合物之中選出的至少1種,更佳是芳香族磷酸酯。 Examples of aromatic phosphates include triphenyl phosphate, tris(tolyl) phosphate, tris(xylyl) phosphate, diphenyl cresyl phosphate, and bis(2,6-xylyl) cresyl phosphate. , Resorcinol bis(diphenyl phosphate), 1,3-phenylene bis(bis(2,6-xylyl phosphate)), bisphenol A bis(diphenyl phosphate), 1,3- Phenylene bis(diphenyl phosphate), etc. Examples of the monosubstituted phosphonic acid diester include divinyl benzene phosphonate, diallyl benzene phosphonate, bis(1-butenyl benzene phosphonate), and the like. Examples of the disubstituted phosphinate include phenyl diphenylphosphinate, methyl diphenylphosphinate, and the like. Examples of metal salts of disubstituted phosphinic acids include metal salts of dialkylphosphinic acid, metal salts of diallylphosphinic acid, metal salts of divinylphosphinic acid, and diarylphosphinic acids. Metal salts of acids, etc. As mentioned above, these metal salts are preferably any one of lithium salt, sodium salt, potassium salt, calcium salt, magnesium salt, aluminum salt, titanium salt and zinc salt. Examples of organic nitrogen-containing phosphorus compounds include phosphazene compounds such as bis(2-allylphenoxy)phosphazene and bis(tolyl)phosphazene; melamine phosphate, melamine pyrophosphate, melamine polyphosphate, polyphosphate, etc. Melamine phosphate, etc. Examples of cyclic organophosphorus compounds include: 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 10-(2,5-dihydroxyphenyl)-9,10 -Dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, etc. Among these, at least one selected from aromatic phosphates, metal salts of disubstituted phosphinic acids, and cyclic organophosphorus compounds is preferred, and aromatic phosphates are more preferred.
此外,前述芳香族磷酸酯較佳是由下述通式(F-1)或(F-2)表示的芳香族磷酸酯,前述二取代次膦酸的金屬鹽較佳是由下述通式(F-3)表示的二取代次膦酸的金屬鹽。 Furthermore, the aromatic phosphate ester is preferably an aromatic phosphate represented by the following general formula (F-1) or (F-2), and the metal salt of the disubstituted phosphinic acid is preferably represented by the following general formula (F-3) Metal salt of disubstituted phosphinic acid.
式(F-1)~(F-3)中,R F1~R F5各自獨立地為碳數1~5的烷基或鹵素原子;e及F各自獨立地為0~5的整數,g、h及i各自獨立地為0~4的整數。 R F6及R F7各自獨立地為碳數1~5的烷基或碳數6~14的芳基;M為鋰原子、鈉原子、鉀原子、鈣原子、鎂原子、鋁原子、鈦原子、鋅原子;j為1~4的整數。 In the formulas (F-1) to (F-3), R F1 to R F5 are each independently an alkyl group or a halogen atom having 1 to 5 carbon atoms; e and F are each independently an integer of 0 to 5, and g, h and i are each independently an integer from 0 to 4. R F6 and R F7 are each independently an alkyl group with 1 to 5 carbon atoms or an aryl group with 6 to 14 carbon atoms; M is a lithium atom, a sodium atom, a potassium atom, a calcium atom, a magnesium atom, an aluminum atom, a titanium atom, Zinc atom; j is an integer from 1 to 4.
作為R F1~R F5表示的碳數1~5的烷基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。該烷基以碳數1~3的烷基為佳。作為R F1~R F5表示的鹵素原子,可舉例如氟原子等。 e及f以0~2的整數為佳,以2較佳。g、h及i以0~2的整數為佳,以0或1較佳,以0更佳。 作為R F6及R F7表示的碳數1~5的烷基,可舉例如與R F1~R F5的情形相同的基。 作為R F6及R F7表示的碳數6~14的芳基,可舉例如:苯基、萘基、聯苯基、蒽基等。該芳香族烴基以碳數6~10的芳基為佳。 j與金屬離子的價數相等,亦即,會對應於M的種類而在1~4的範圍內改變。 作為M,以鋁原子為佳。再者,當M為鋁原子時,j為3。 Examples of the alkyl group having 1 to 5 carbon atoms represented by R F1 to R F5 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n-pentyl Key et al. The alkyl group is preferably an alkyl group having 1 to 3 carbon atoms. Examples of the halogen atoms represented by RF1 to RF5 include fluorine atoms and the like. It is preferable that e and f are integers from 0 to 2, and 2 is more preferable. g, h and i are preferably integers from 0 to 2, preferably 0 or 1, and more preferably 0. Examples of the alkyl group having 1 to 5 carbon atoms represented by RF6 and RF7 include the same groups as in the case of RF1 to RF5 . Examples of the aryl group having 6 to 14 carbon atoms represented by RF6 and RF7 include phenyl group, naphthyl group, biphenyl group, anthracenyl group, and the like. The aromatic hydrocarbon group is preferably an aryl group having 6 to 10 carbon atoms. j is equal to the valence of the metal ion, that is, it changes in the range of 1 to 4 according to the type of M. As M, an aluminum atom is preferred. Furthermore, when M is an aluminum atom, j is 3.
(熱硬化性樹脂組成物[I]的各成分的含量) 熱硬化性樹脂組成物[I]中,(A)~(D)成分的含量並無特別限制,較佳是:相對於(A)~(C)成分的合計100質量份,(A)成分為15~65質量份,(B)成分為15~50質量份,(C)成分為10~45質量份,(D)成分為30~70質量份。 藉由相對於(A)~(C)成分的合計100質量份,(A)成分為15質量份以上,而有能夠獲得高耐熱性、低相對介電常數、高玻璃轉移溫度及低熱膨脹性的傾向。另一方面,藉由相對於(A)~(C)成分的合計100質量份,(A)成分為65質量份以下,而有熱硬化性樹脂組成物[I]的流動性及成形性良好的傾向。 藉由相對於(A)~(C)成分的合計100質量份,(B)成分為15質量份以上,而有能夠獲得高耐熱性、高玻璃轉移溫度及低熱膨脹性的傾向。另一方面,藉由相對於(A)~(C)成分的合計100質量份,(B)成分為50質量份以下,而有會成為高耐熱性、低相對介電常數、高玻璃轉移溫度及低熱膨脹性的傾向。 藉由相對於(A)~(C)成分的合計100質量份,(C)成分為10質量份以上,而有能夠獲得高耐熱性及低相對介電常數的傾向。另一方面,藉由相對於(A)~(C)成分的合計100質量份,(C)成分為45質量份以下,而有能夠獲得高耐熱性、高金屬箔黏著性及低熱膨脹性的傾向。 藉由相對於(A)~(C)成分的合計100質量份,(D)成分為30質量份以上,而有能夠獲得優異低熱膨脹性的傾向。另一方面,藉由相對於(A)~(C)成分的合計100質量份,(D)成分為70質量份以下,而有能夠獲得耐熱性且熱硬化性樹脂組成物[I]的流動性及成形性良好的傾向。 (Content of each component of thermosetting resin composition [I]) In the thermosetting resin composition [I], the content of components (A) to (D) is not particularly limited. Preferably, the content of component (A) is 100 parts by mass in total of components (A) to (C). It is 15-65 parts by mass, the component (B) is 15-50 parts by mass, the component (C) is 10-45 parts by mass, and the component (D) is 30-70 parts by mass. When the component (A) is 15 parts by mass or more based on 100 parts by mass of the components (A) to (C) in total, it is possible to obtain high heat resistance, low relative dielectric constant, high glass transition temperature and low thermal expansion. tendency. On the other hand, when the component (A) is 65 parts by mass or less based on 100 parts by mass of the components (A) to (C) in total, the thermosetting resin composition [I] has good fluidity and moldability. tendency. When the component (B) is 15 parts by mass or more based on 100 parts by mass of the components (A) to (C) in total, high heat resistance, high glass transition temperature, and low thermal expansion tend to be obtained. On the other hand, when the component (B) is 50 parts by mass or less based on 100 parts by mass of the components (A) to (C) in total, it may result in high heat resistance, low relative dielectric constant, and high glass transition temperature. and low thermal expansion tendency. When the component (C) is 10 parts by mass or more relative to 100 parts by mass of the components (A) to (C) in total, high heat resistance and a low relative dielectric constant tend to be obtained. On the other hand, it is possible to obtain high heat resistance, high metal foil adhesion and low thermal expansion by containing 45 parts by mass or less of the component (C) with respect to 100 parts by mass of the components (A) to (C) in total. tendency. When the component (D) is 30 parts by mass or more relative to 100 parts by mass of the components (A) to (C) in total, there is a tendency that excellent low thermal expansion properties can be obtained. On the other hand, when the component (D) is 70 parts by mass or less based on 100 parts by mass of the components (A) to (C) in total, it is possible to obtain heat resistance and flow of the thermosetting resin composition [I] Tendency to have good properties and formability.
此外,當使熱硬化性樹脂組成物[I]含有(E)成分時,相對於(A)~(C)成分的合計100質量份,(E)成分的含量以0.5~6質量份為佳。 藉由相對於(A)~(C)成分的合計100質量份,(E)成分為0.5質量份以上,而有能夠獲得高金屬箔黏著性及優異低熱膨脹性的傾向。另一方面,藉由相對於(A)~(C)成分的合計100質量份,(E)成分為6質量份以下,而有能夠獲得高耐熱性的傾向。 In addition, when the thermosetting resin composition [I] contains the component (E), the content of the component (E) is preferably 0.5 to 6 parts by mass relative to 100 parts by mass of the components (A) to (C) in total. . When the component (E) is 0.5 parts by mass or more relative to 100 parts by mass of the components (A) to (C) in total, high metal foil adhesion and excellent low thermal expansion tend to be obtained. On the other hand, when the component (E) is 6 parts by mass or less based on 100 parts by mass of the components (A) to (C) in total, there is a tendency that high heat resistance can be obtained.
此外,當使熱硬化性樹脂組成物[I]含有(F)成分時,從難燃性的觀點來看,相對於(A)~(C)成分的合計100質量份,(F)成分的含量以0.1~20質量份為佳,以0.5~10質量份較佳。特別是,當使用磷系難燃劑來作為(F)成分時,從難燃性的觀點來看,相對於(A)~(C)成分的合計100質量份,以使磷原子含有率成為0.1~3質量份的量為佳,以使磷原子含有率成為0.2~3質量份的量較佳,以使磷原子含有率成為0.5~3質量份的量更佳。In addition, when the thermosetting resin composition [I] is made to contain the component (F), from the viewpoint of flame retardancy, the amount of the component (F) is 100 parts by mass in total of the components (A) to (C). The content is preferably 0.1 to 20 parts by mass, and preferably 0.5 to 10 parts by mass. In particular, when a phosphorus-based flame retardant is used as the component (F), from the viewpoint of flame retardancy, the phosphorus atom content is set to 100 parts by mass in total of the components (A) to (C). The amount is preferably 0.1 to 3 parts by mass, the phosphorus atom content is preferably 0.2 to 3 parts by mass, and the phosphorus atom content is more preferably 0.5 to 3 parts by mass.
(其它成分) 能夠在不損害本發明的效果的範圍內因應需要來使熱硬化性樹脂組成物[I]含有添加劑及有機溶劑等其它成分。此等可單獨含有1種,且亦可含有2種以上。 (other ingredients) The thermosetting resin composition [I] can contain other components such as additives and organic solvents as necessary within a range that does not impair the effects of the present invention. These may be contained individually by 1 type, and may contain 2 or more types.
(添加劑) 作為添加劑,可舉例如:前述(D)成分以外的無機填充材料、硬化促進劑、著色劑、抗氧化劑、還原劑、紫外線吸收劑、螢光增白劑、密合性提高劑、有機填充劑等。此等可單獨使用1種,且亦可併用2種以上。 (additive) Examples of additives include inorganic fillers other than the aforementioned component (D), hardening accelerators, colorants, antioxidants, reducing agents, ultraviolet absorbers, fluorescent whitening agents, adhesion improving agents, and organic fillers. wait. One type of these may be used alone, or two or more types may be used in combination.
(有機溶劑) 從藉由稀釋便能夠容易進行處理這樣的觀點、及容易製造後述預浸體的觀點來看,熱硬化性樹脂組成物[I]可含有有機溶劑。本說明書中,有時將含有有機溶劑的熱硬化性樹脂組成物稱為樹脂清漆。 作為該有機溶劑並無特別限制,可舉例如:甲醇、乙醇、乙二醇、乙二醇單甲基醚、乙二醇單乙基醚、二乙二醇、三乙二醇單甲基醚、三乙二醇單乙基醚、三乙二醇、丙二醇單甲基醚、二丙二醇單甲基醚、丙二醇單丙基醚、二丙二醇單丙基醚等醇系溶劑;丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶劑;四氫呋喃等醚系溶劑;甲苯、二甲苯、三甲苯等芳香族系溶劑;包含甲醯胺、N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺及N-甲基吡咯啶酮等醯胺系溶劑在內的含氮原子溶劑;包含二甲基亞碸等亞碸系溶劑在內的含硫原子溶劑;乙酸甲氧基乙酯、乙酸乙氧基乙酯、乙酸丁氧基乙酯、丙二醇單甲基醚乙酸酯、乙酸乙酯等酯系溶劑等。 此等之中,從溶解性的觀點來看,較佳是醇系溶劑、酮系溶劑、含氮原子溶劑,更佳是甲基乙基酮、甲基異丁基酮、環己酮、甲基賽璐蘇、丙二醇單甲基醚,進一步更佳是甲基乙基酮、甲基異丁基酮,特佳是甲基乙基酮。 有機溶劑可單獨使用1種,且亦可併用2種以上。 (organic solvent) The thermosetting resin composition [I] may contain an organic solvent from the viewpoint of easy handling by dilution and the viewpoint of easy production of a prepreg to be described later. In this specification, the thermosetting resin composition containing an organic solvent may be called resin varnish. The organic solvent is not particularly limited, and examples thereof include methanol, ethanol, ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol, and triethylene glycol monomethyl ether. , triethylene glycol monoethyl ether, triethylene glycol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monopropyl ether, dipropylene glycol monopropyl ether and other alcohol solvents; acetone, methyl ethyl ether, etc. Ketone solvents such as ketone, methyl isobutyl ketone, and cyclohexanone; ether solvents such as tetrahydrofuran; aromatic solvents such as toluene, xylene, and trimethylbenzene; including formamide, N-methylformamide, Nitrogen atom-containing solvents including amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide and N-methylpyrrolidone; including dimethyl terine and other amide solvents Sulfur atom-containing solvents including sulfur-based solvents; ester-based solvents such as methoxyethyl acetate, ethoxyethyl acetate, butoxyethyl acetate, propylene glycol monomethyl ether acetate, and ethyl acetate. Among these, from the viewpoint of solubility, alcohol-based solvents, ketone-based solvents, and nitrogen atom-containing solvents are preferred, and methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and methane are more preferred. Kitaselusu, propylene glycol monomethyl ether, more preferably methyl ethyl ketone, methyl isobutyl ketone, particularly preferably methyl ethyl ketone. One type of organic solvent may be used alone, or two or more types may be used in combination.
熱硬化性樹脂組成物[I](樹脂清漆)中,有機溶劑的含量只要適當調整至容易對熱硬化性樹脂組成物[I]進行處理的程度內即可,並且,只要在樹脂清漆的塗佈性成為良好的範圍內,則無特別限制,較佳是使源自熱硬化性樹脂組成物[I]的固體成分濃度(有機溶劑以外的成分的濃度)成為30~90質量%,更佳是成為40~80質量%,進一步更佳是成為50~80質量%。In the thermosetting resin composition [I] (resin varnish), the content of the organic solvent may be appropriately adjusted to a level that facilitates handling of the thermosetting resin composition [I], and the content of the organic solvent in the resin varnish shall be There is no particular restriction within the range in which the cloth properties are good, but the solid content concentration (concentration of components other than organic solvents) derived from the thermosetting resin composition [I] is preferably 30 to 90 mass %, more preferably The content is 40 to 80% by mass, more preferably 50 to 80% by mass.
其次,詳細說明環氧樹脂組成物[II]含有的各成分。再者,為了避免與前述熱硬化性樹脂組成物[I]重複,環氧樹脂組成物[II]可不含熱硬化性樹脂組成物[I]含有的(A)馬來醯亞胺化合物,但並不特別限定於該態樣,亦可含有前述(A)馬來醯亞胺化合物。Next, each component contained in the epoxy resin composition [II] will be described in detail. Furthermore, in order to avoid duplication with the aforementioned thermosetting resin composition [I], the epoxy resin composition [II] may not contain the (A) maleimide compound contained in the thermosetting resin composition [I], but It is not particularly limited to this aspect, and may contain the maleimide compound (A) mentioned above.
<(G)環氧樹脂> 作為環氧樹脂組成物[II]含有的(G)環氧樹脂,可舉例如與前述熱硬化性樹脂組成物[I]中的(B)環氧樹脂相同的環氧樹脂,且其說明亦相同。此等之中,較佳是從由雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基酚醛清漆型環氧樹脂及雙環戊二烯型環氧樹脂所組成之群組中選出的至少1種,從低熱膨脹性及高玻璃轉移溫度的觀點來看,更佳是從由甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂、蒽型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基酚醛清漆型環氧樹脂及苯酚酚醛清漆型環氧樹脂所組成之群組中選出的至少1種,進一步更佳是聯苯芳烷基酚醛清漆型環氧樹脂。 <(G)Epoxy resin> Examples of the (G) epoxy resin contained in the epoxy resin composition [II] include the same epoxy resin as the (B) epoxy resin in the aforementioned thermosetting resin composition [I], and the description thereof is also same. Among these, preferred ones are selected from the group consisting of bisphenol F type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin, and biphenyl type epoxy resin. At least one selected from the group consisting of epoxy resin, biphenyl aralkyl novolak type epoxy resin and dicyclopentadiene type epoxy resin, from the viewpoint of low thermal expansion and high glass transition temperature, More preferably, the resin is made from cresol novolak type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl novolak type epoxy resin and phenol novolac type epoxy resin. At least one selected from the group consisting of oxy resins, more preferably a biphenyl aralkyl novolak type epoxy resin.
<(H)環氧樹脂硬化劑> 作為環氧樹脂硬化劑,可舉例如:各種酚樹脂化合物、酸酐化合物、胺化合物、醯肼化合物等。作為酚樹脂化合物,可舉例如:酚醛清漆型酚樹脂、甲階(resol)型酚樹脂等;作為酸酐化合物,可舉例如:鄰苯二甲酸酐、二苯甲酮四甲酸二酐、甲基納迪克酸等。此外,作為胺化合物,可舉例如:雙氰胺、二胺基二苯基甲烷、胍脲等。 此等環氧樹脂硬化劑中,從提高可靠性的觀點來看,以酚醛清漆型酚樹脂為佳,以甲酚酚醛清漆樹脂較佳。 <(H) Epoxy resin hardener> Examples of the epoxy resin hardener include various phenol resin compounds, acid anhydride compounds, amine compounds, and hydrazine compounds. Examples of the phenol resin compound include novolak type phenol resin, resol type phenol resin, etc. Examples of the acid anhydride compound include phthalic anhydride, benzophenone tetracarboxylic dianhydride, methyl Nadic acid etc. In addition, examples of the amine compound include dicyandiamide, diaminodiphenylmethane, guanidine urea, and the like. Among these epoxy resin hardeners, from the viewpoint of improving reliability, novolak type phenol resin is preferred, and cresol novolak resin is preferred.
酚醛清漆型酚樹脂可使用市售物,可舉例如:「TD2090」(DIC股份有限公司製,商品名)等苯酚酚醛清漆樹脂;「KA-1165」(DIC股份有限公司製,商品名)等甲酚酚醛清漆樹脂等。此外,可舉例如:「PHENOLITE LA-1356」(DIC股份有限公司製,商品名)、「PHENOLITE LA7050系列」(DIC股份有限公司製,商品名)等含三嗪環酚醛清漆型酚樹脂等市售物,且可舉例如:「PHENOLITE LA-3018」(DIC股份有限公司製,商品名)等含三嗪甲酚酚醛清漆樹脂。Commercially available novolak-type phenol resins can be used, and examples include phenol novolak resins such as "TD2090" (trade name, manufactured by DIC Co., Ltd.); "KA-1165" (trade name, manufactured by DIC Co., Ltd.), etc. Cresol novolac resin, etc. In addition, commercially available triazine ring-containing novolac varnish-type phenolic resins such as "PHENOLITE LA-1356" (trade name, manufactured by DIC Co., Ltd.) and "PHENOLITE LA7050 Series" (trade name, manufactured by DIC Co., Ltd.) can be cited. For example, triazinecresol novolak resins such as "PHENOLITE LA-3018" (trade name, manufactured by DIC Co., Ltd.) can be used.
環氧樹脂組成物[II]可因應需要來含有(I)硬化促進劑及(J)無機填充材料。 <(I)硬化促進劑> 從促進(G)環氧樹脂與(H)環氧樹脂硬化劑的反應的觀點來看,環氧樹脂組成物[II]較佳是含有(I)硬化促進劑。作為(I)硬化促進劑,可舉例如:2-苯基咪唑、2-乙基-4-甲基咪唑、偏苯三甲酸1-氰乙基-2-苯基咪唑鎓鹽等咪唑化合物;三苯膦等有機磷化合物;硼酸鏻等鎓鹽;1,8-二氮雜雙環十一烯等胺類;3-(3,4-二氯苯基)-1,1-二甲基脲等。此等可單獨使用1種,且亦可併用2種以上。此等之中,以咪唑化合物為佳,以2-乙基-4-甲基咪唑較佳。 The epoxy resin composition [II] may contain (I) a hardening accelerator and (J) an inorganic filler material as needed. <(I) Hardening accelerator> From the viewpoint of accelerating the reaction between the (G) epoxy resin and the (H) epoxy resin hardener, the epoxy resin composition [II] preferably contains the (I) hardening accelerator. Examples of (I) hardening accelerators include imidazole compounds such as 2-phenylimidazole, 2-ethyl-4-methylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate; Organophosphorus compounds such as triphenylphosphine; onium salts such as phosphonium borate; amines such as 1,8-diazabicycloundecene; 3-(3,4-dichlorophenyl)-1,1-dimethylurea wait. One type of these may be used alone, or two or more types may be used in combination. Among these, imidazole compounds are preferred, and 2-ethyl-4-methylimidazole is preferred.
<(J)無機填充材料> 從低熱膨脹化的觀點來看,環氧樹脂組成物[II]較佳是含有(J)無機填充材料。作為(J)無機填充材料,可舉例如:氧化矽、氧化鋁、硫酸鋇、滑石、黏土、雲母粉、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、硼酸鋁、鈦酸鋇、鈦酸鍶、鈦酸鈣、鈦酸鉍、氧化鈦、鋯酸鋇、鋯酸鈣等。此等可單獨使用1種,且亦可併用2種以上。此等之中,從低熱膨脹係數的觀點來看,以氧化矽為佳。 無機填充材料的平均粒徑以0.1 μm以上為佳,以0.2 μm以上較佳,以0.3 μm以上更佳。 無機填充材料可經實施表面處理。例如:當使用氧化矽來作為無機填充材料時,可實施矽烷耦合劑處理來作為表面處理。作為矽烷耦合劑,可舉例如:胺基矽烷耦合劑、乙烯基矽烷耦合劑、環氧基矽烷耦合劑等。此等之中,以經以胺基矽烷耦合劑來實施表面處理後的氧化矽為佳。 <(J) Inorganic filler> From the viewpoint of low thermal expansion, the epoxy resin composition [II] preferably contains (J) an inorganic filler. Examples of the (J) inorganic filler include silicon oxide, aluminum oxide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, and boric acid. Aluminum, barium titanate, strontium titanate, calcium titanate, bismuth titanate, titanium oxide, barium zirconate, calcium zirconate, etc. One type of these may be used alone, or two or more types may be used in combination. Among these, silicon oxide is preferred from the viewpoint of low thermal expansion coefficient. The average particle size of the inorganic filler is preferably 0.1 μm or more, more preferably 0.2 μm or more, and more preferably 0.3 μm or more. The inorganic filler material can be surface treated. For example: when using silica as the inorganic filler material, a silane coupling agent treatment can be implemented as a surface treatment. Examples of the silane coupling agent include an aminosilane coupling agent, a vinylsilane coupling agent, an epoxysilane coupling agent, and the like. Among these, silicon oxide surface-treated with an aminosilane coupling agent is preferred.
(環氧樹脂組成物[II]的各成分的含量) 環氧樹脂組成物[II]中,(G)~(J)成分的含量並無特別限制,較佳是:相對於(G)~(J)成分的合計100質量份,(G)成分為5~50質量份、(H)成分為5~50質量份、(I)成分為0.001~1質量份、(J)成分為20~80質量份。更佳是:相對於(G)~(J)成分的合計100質量份,(G)成分為5~35質量份、(H)成分為5~40質量份、(I)成分為0.001~1質量份、(J)成分為35~80質量份。 (Content of each component of the epoxy resin composition [II]) In the epoxy resin composition [II], the content of components (G) to (J) is not particularly limited. Preferably, the component (G) is: 5 to 50 parts by mass, component (H) is 5 to 50 parts by mass, component (I) is 0.001 to 1 part by mass, and component (J) is 20 to 80 parts by mass. More preferably, the component (G) is 5 to 35 parts by mass, the component (H) is 5 to 40 parts by mass, and the component (I) is 0.001 to 1, based on 100 parts by mass of the components (G) to (J) in total. Parts by mass, (J) component are 35 to 80 parts by mass.
(其它成分) 能夠在不損害本發明的效果的範圍內因應需要來使環氧樹脂組成物[II]含有添加劑及有機溶劑等其它成分。此等可單獨含有1種,且亦可含有2種以上。 (other ingredients) The epoxy resin composition [II] can contain other components such as additives and organic solvents as necessary within a range that does not impair the effects of the present invention. These may be contained individually by 1 type, and may contain 2 or more types.
(添加劑) 作為添加劑,可舉例如:著色劑、抗氧化劑、還原劑、紫外線吸收劑、螢光增白劑、密合性提高劑、有機填充劑等。此等可單獨使用1種,且亦可併用2種以上。 (additive) Examples of additives include colorants, antioxidants, reducing agents, ultraviolet absorbers, fluorescent whitening agents, adhesion improving agents, organic fillers, and the like. One type of these may be used alone, or two or more types may be used in combination.
(有機溶劑) 有機溶劑的說明是與熱硬化性樹脂組成物[I]中的有機溶劑的說明相同。 (organic solvent) The description of the organic solvent is the same as the description of the organic solvent in the thermosetting resin composition [I].
其次,詳細說明熱硬化性樹脂組成物[III]含有的各成分。 <(K)矽氧改質馬來醯亞胺化合物> (K)矽氧改質馬來醯亞胺化合物只要為具有矽氧烷骨架之馬來醯亞胺化合物,則無特別限制。較佳可舉例如:1分子中具有至少2個N-取代馬來醯亞胺基之馬來醯亞胺化合物(k-1)[以下,亦稱為馬來醯亞胺化合物(k-1)]與1分子中具有至少2個一級胺基之矽氧烷化合物(k-2)[以下,亦稱為矽氧烷化合物(k-2)]的加成反應物等,較佳是馬來醯亞胺化合物(k-1)、矽氧烷化合物(k-2)及單胺化合物[以下亦稱為單胺化合物(k-3)]的加成反應物。 作為馬來醯亞胺化合物(k-1),能夠使用與熱硬化性樹脂組成物[I]中的(A)馬來醯亞胺化合物的說明中的馬來醯亞胺化合物(a1)相同的化合物。 作為矽氧烷化合物(k-2),較佳是含有由下述通式(k-2-1)表示的結構單元。 Next, each component contained in the thermosetting resin composition [III] will be described in detail. <(K) Silicone modified maleimide compound> (K) The silicone-modified maleimine compound is not particularly limited as long as it is a maleimine compound having a siloxane skeleton. Preferable examples include: a maleimine compound (k-1) having at least two N-substituted maleimide groups in one molecule [hereinafter also referred to as a maleimine compound (k-1) )] and a siloxane compound (k-2) [hereinafter also referred to as a siloxane compound (k-2)] having at least two primary amine groups in one molecule, etc., preferably siloxane compound (k-2) An addition reaction product of a leximine compound (k-1), a siloxane compound (k-2), and a monoamine compound [hereinafter also referred to as a monoamine compound (k-3)]. As the maleimide compound (k-1), the same maleimide compound (a1) as described in the description of (A) the maleimide compound in the thermosetting resin composition [I] can be used. compound of. The siloxane compound (k-2) preferably contains a structural unit represented by the following general formula (k-2-1).
通式(k-2-1)中,R k1及R k2各自獨立地表示碳數1~5的烷基、苯基、或具有取代基之苯基。 In the general formula (k-2-1), R k1 and R k2 each independently represent an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a phenyl group having a substituent.
作為R k1及R k2表示的碳數1~5的烷基,可舉例如:甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正戊基等。該烷基以碳數1~3的烷基為佳,以甲基較佳。 「具有取代基之苯基」中,作為苯基具有的取代基,可舉例如:碳數1~5的烷基、碳數2~5的烯基、碳數2~5的炔基。該碳數1~5的烷基可舉例如與前述相同的烷基。該碳數2~5的烯基可舉例如:乙烯基、烯丙基等。碳數2~5的炔基可舉例如:乙炔基、炔丙基等。 R k1及R k2較佳是皆為碳數1~5的烷基,更佳是甲基。 Examples of the alkyl group having 1 to 5 carbon atoms represented by R k1 and R k2 include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tertiary butyl, n-pentyl Key et al. As the alkyl group, an alkyl group having 1 to 3 carbon atoms is preferred, and a methyl group is preferred. In the "substituted phenyl group", examples of the substituent of the phenyl group include an alkyl group having 1 to 5 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, and an alkynyl group having 2 to 5 carbon atoms. Examples of the alkyl group having 1 to 5 carbon atoms include the same alkyl groups as described above. Examples of the alkenyl group having 2 to 5 carbon atoms include vinyl, allyl, and the like. Examples of the alkynyl group having 2 to 5 carbon atoms include ethynyl group, propargyl group, and the like. R k1 and R k2 are preferably both alkyl groups having 1 to 5 carbon atoms, and more preferably are methyl groups.
作為矽氧烷化合物(k-2),較佳是由下述通式(k-2-2)表示的矽氧烷二胺。As the siloxane compound (k-2), a siloxane diamine represented by the following general formula (k-2-2) is preferred.
通式(k-2-2)中,R k1及R k2與通式(k-2-1)中的R k1及R k2相同;R k3及R k4各自獨立地表示碳數1~5的烷基、苯基、或具有取代基之苯基;R k5及R k6各自獨立地表示2價有機基,m為2~100的整數。 In the general formula (k-2-2), R k1 and R k2 are the same as R k1 and R k2 in the general formula (k-2-1); R k3 and R k4 each independently represent a carbon number of 1 to 5 an alkyl group, a phenyl group, or a phenyl group having a substituent; R k5 and R k6 each independently represent a divalent organic group, and m is an integer from 2 to 100.
R k3及R k4表示的碳數1~5的烷基、苯基、及具有取代基之苯基的說明是與R k1及R k2中的說明相同。R k3及R k4以甲基為佳。 作為R k5及R k6表示的2價有機基,可舉例如:伸烷基、伸烯基、伸炔基、伸芳基、-O-、或將此等組合而成的2價連結基等。作為該伸烷基,可舉例如:亞甲基、伸乙基、伸丙基等碳數1~10的伸烷基。作為該伸烯基,可舉例如碳數2~10的伸烯基。作為該伸炔基,可舉例如碳數2~10的伸炔基。作為該伸芳基,可舉例如:伸苯基、伸萘基等碳數6~20的伸芳基。 此等之中,R k5及R k6以伸烷基、伸芳基為佳。 m以2~50的整數為佳,以3~40的整數較佳,以5~30的整數更佳,以7~30的整數進一步更佳。 The description of the alkyl group having 1 to 5 carbon atoms, the phenyl group, and the phenyl group having a substituent represented by R k3 and R k4 is the same as the description of R k1 and R k2 . R k3 and R k4 are preferably methyl. Examples of the divalent organic group represented by R k5 and R k6 include an alkylene group, an alkenylene group, an alkynylene group, an aryl group, -O-, or a divalent linking group obtained by combining these groups. . Examples of the alkylene group include alkylene groups having 1 to 10 carbon atoms such as methylene, ethylene, and propylene. Examples of the alkenylene group include alkenylene groups having 2 to 10 carbon atoms. Examples of the alkynylene group include an alkynylene group having 2 to 10 carbon atoms. Examples of the aryl group include aryl groups having 6 to 20 carbon atoms, such as a phenyl group and a naphthylene group. Among these, R k5 and R k6 are preferably an alkylene group or an aryl group. m is preferably an integer of 2 to 50, more preferably an integer of 3 to 40, more preferably an integer of 5 to 30, and still more preferably an integer of 7 to 30.
矽氧烷化合物(k-2)的官能基當量無特別限制,以300~3,000 g/mol為佳,以300~2,000 g/mol較佳,以300~1,500 g/mol更佳。The functional group equivalent of the siloxane compound (k-2) is not particularly limited, but is preferably 300 to 3,000 g/mol, more preferably 300 to 2,000 g/mol, and more preferably 300 to 1,500 g/mol.
作為矽氧烷化合物(k-2),能夠使用市售物。市售物可舉例如:「KF-8010」(胺基的官能基當量為430 g/mol)、「X-22-161A」(胺基的官能基當量為800 g/mol)、「X-22-161B」(胺基的官能基當量為1,500 g/mol)、「KF-8012」(胺基的官能基當量為2,200 g/mol)、「KF-8008」(胺基的官能基當量為5,700 g/mol)、「X-22-9409」(胺基的官能基當量為700 g/mol)、「X-22-1660B-3」(胺基的官能基當量為2,200 g/mol)(以上為信越化學工業股份有限公司製);「BY-16-853U」(胺基的官能基當量為460 g/mol)、「BY-16-853」(胺基的官能基當量為650 g/mol)、「BY-16-853B」(胺基的官能基當量為2,200 g/mol)(以上為Dow Corning Toray股份有限公司製);「XF42-C5742」(胺基的官能基當量為1,280 g/mol)、「XF42-C6252」(胺基的官能基當量為1,255 g/mol)、「XF42-C5379」(胺基的官能基當量為745 g/mol)(以上為Momentive Performance Materials Japan有限公司製)等。此等可單獨使用1種,且亦可併用2種以上。As the siloxane compound (k-2), a commercially available product can be used. Examples of commercially available products include: "KF-8010" (the functional group equivalent of the amine group is 430 g/mol), "X-22-161A" (the functional group equivalent of the amine group is 800 g/mol), "X- 22-161B" (the functional group equivalent of the amine group is 1,500 g/mol), "KF-8012" (the functional group equivalent of the amine group is 2,200 g/mol), "KF-8008" (the functional group equivalent of the amine group is 5,700 g/mol), "X-22-9409" (the functional group equivalent of the amine group is 700 g/mol), "X-22-1660B-3" (the functional group equivalent of the amine group is 2,200 g/mol) ( The above are manufactured by Shin-Etsu Chemical Industry Co., Ltd.); "BY-16-853U" (the functional group equivalent of the amine group is 460 g/mol), "BY-16-853" (the functional group equivalent of the amine group is 650 g/mol) mol), "BY-16-853B" (the functional group equivalent of the amine group is 2,200 g/mol) (the above is manufactured by Dow Corning Toray Co., Ltd.); "XF42-C5742" (the functional group equivalent of the amine group is 1,280 g /mol), "XF42-C6252" (the functional group equivalent of the amine group is 1,255 g/mol), "XF42-C5379" (the functional group equivalent of the amine group is 745 g/mol) (the above is Momentive Performance Materials Japan Co., Ltd. system), etc. One type of these may be used alone, or two or more types may be used in combination.
作為單胺化合物(k-3),能夠使用與前述熱硬化性樹脂組成物[I]中的單胺化合物(a2)相同的化合物,且較佳例亦相同。As the monoamine compound (k-3), the same compound as the monoamine compound (a2) in the aforementioned thermosetting resin composition [I] can be used, and preferred examples are also the same.
如前所述,(K)矽氧改質馬來醯亞胺化合物的一態樣能夠藉由下述方式來製造:使前述馬來醯亞胺化合物(k-1)、前述矽氧烷化合物(k-2)及因應需要的單胺化合物(k-3)進行反應。 從防止凝膠化及耐熱性的觀點來看,該反應中,馬來醯亞胺化合物(k-1)、矽氧烷化合物(k-2)及因應需要來使用的單胺化合物(k-3)各自的使用比例,較佳是:馬來醯亞胺化合物(k-1)的馬來醯亞胺基的當量超過矽氧烷化合物(k-2)與單胺化合物(k-3)的一級胺基的當量的合計,馬來醯亞胺化合物(k-1)的馬來醯亞胺基的當量和矽氧烷化合物(k-2)與單胺化合物(k-3)的一級胺基的當量的合計的比亦即(k-1)/[(k-2)+(k-3)]以1~15為佳,以2~10較佳,以3~10更佳。 從生產性及均勻進行反應的觀點來看,反應溫度以70~150℃為佳,以90~130℃較佳。此外,反應時間無特別限制,以0.1~10小時為佳,以1~6小時較佳。 As mentioned above, one aspect of the (K) silicone-modified maleimide compound can be produced by using the above-mentioned maleimide compound (k-1), the above-mentioned siloxane compound (k-2) and the monoamine compound (k-3) as required react. From the viewpoint of gelation prevention and heat resistance, in this reaction, a maleimine compound (k-1), a siloxane compound (k-2), and a monoamine compound (k- 3) The respective usage ratio is preferably: the equivalent weight of the maleimide group of the maleimine compound (k-1) exceeds that of the siloxane compound (k-2) and the monoamine compound (k-3) The total equivalent of the primary amine group, the equivalent of the maleimine group of the maleimine compound (k-1) and the primary equivalent of the siloxane compound (k-2) and the monoamine compound (k-3) The ratio of the total equivalents of amine groups, that is, (k-1)/[(k-2) + (k-3)], is preferably 1 to 15, more preferably 2 to 10, and more preferably 3 to 10. From the viewpoint of productivity and uniform reaction, the reaction temperature is preferably 70 to 150°C, and more preferably 90 to 130°C. In addition, the reaction time is not particularly limited, but is preferably 0.1 to 10 hours, and more preferably 1 to 6 hours.
<(L)咪唑化合物> 作為(L)咪唑化合物,可舉例如:2-甲基咪唑、2-乙基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、2-苯基咪唑、1,2-二甲基咪唑、2-乙基-1-甲基咪唑、1,2-二乙基咪唑、1-乙基-2-甲基咪唑、2-乙基-4-甲基咪唑、4-乙基-2-甲基咪唑、1-異丁基-2-甲基咪唑、2-苯基-4-甲基咪唑、1-苯甲基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-乙基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑、2,3-二氫-1H-吡咯并[1,2-a]苯并咪唑、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑基-(1’)]乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]乙基-s-三嗪等咪唑化合物;異氰酸基遮蔽咪唑、環氧基遮蔽咪唑等改質咪唑化合物;偏苯三甲酸1-氰乙基-2-苯基咪唑鎓鹽等前述咪唑化合物與偏苯三甲酸的鹽;前述咪唑化合物與異氰脲酸的鹽;前述咪唑化合物與氫溴酸的鹽等。此等之中,以改質咪唑化合物為佳,以異氰酸基遮蔽咪唑較佳。咪唑化合物可單獨使用1種,且亦可併用2種以上。 <(L)imidazole compound> Examples of the (L) imidazole compound include 2-methylimidazole, 2-ethylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenylimidazole, 1,2-di Methylimidazole, 2-ethyl-1-methylimidazole, 1,2-diethylimidazole, 1-ethyl-2-methylimidazole, 2-ethyl-4-methylimidazole, 4-ethyl -2-methylimidazole, 1-isobutyl-2-methylimidazole, 2-phenyl-4-methylimidazole, 1-phenylmethyl-2-phenylimidazole, 1-cyanoethyl-2- Methylimidazole, 1-cyanoethyl-2-ethylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl- 4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 2 ,4-diamino-6-[2'-methylimidazolyl-(1')]ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazole Triazine-(1')]ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]ethyl-s- Imidazole compounds such as triazine; modified imidazole compounds such as isocyanate masked imidazole and epoxy masked imidazole; trimellitic acid 1-cyanoethyl-2-phenylimidazolium salt and other aforementioned imidazole compounds and trimellitic acid The salt of the aforementioned imidazole compound and isocyanuric acid; the salt of the aforementioned imidazole compound and hydrobromic acid, etc. Among these, a modified imidazole compound is preferred, and an isocyanate group-shielded imidazole is preferred. One type of imidazole compound may be used alone, or two or more types may be used in combination.
<(M)無機填充材料> (M)無機填充材料的說明,是與前述環氧樹脂組成物[II]中的(J)無機填充材料的說明相同。 <(M) Inorganic filler> The description of (M) the inorganic filler is the same as the description of (J) the inorganic filler in the aforementioned epoxy resin composition [II].
(熱硬化性樹脂組成物[III]的各成分的含量) 熱硬化性樹脂組成物[III]中,(K)~(M)成分的含量並無特別限制,較佳是:相對於(K)~(M)成分的合計100質量份,(K)成分為15~80質量份、(L)成分為0.01~5質量份、(M)成分為15~80質量份。更佳是:相對於(K)~(M)成分的合計100質量份,(K)成分為30~65質量份、(L)成分為0.01~3質量份、(M)成分為30~65質量份。 (Content of each component of the thermosetting resin composition [III]) In the thermosetting resin composition [III], the content of components (K) to (M) is not particularly limited. Preferably, the content of component (K) is 100 parts by mass in total of components (K) to (M). The amount is 15 to 80 parts by mass, the component (L) is 0.01 to 5 parts by mass, and the component (M) is 15 to 80 parts by mass. More preferably, the component (K) is 30 to 65 parts by mass, the component (L) is 0.01 to 3 parts by mass, and the component (M) is 30 to 65 parts by mass based on 100 parts by mass of the components (K) to (M) in total. parts by mass.
(其它成分) 能夠在不損害本發明的效果的範圍內因應需要來使熱硬化性樹脂組成物[III]含有添加劑及有機溶劑等其它成分。此等可單獨含有1種,且亦可含有2種以上。 (other ingredients) The thermosetting resin composition [III] can contain other components such as additives and organic solvents as necessary within a range that does not impair the effects of the present invention. These may be contained individually by 1 type, and may contain 2 or more types.
(添加劑) 作為添加劑,可舉例如:著色劑、抗氧化劑、還原劑、紫外線吸收劑、螢光增白劑、密合性提高劑、有機填充劑等。此等可單獨使用1種,且亦可併用2種以上。 (additive) Examples of additives include colorants, antioxidants, reducing agents, ultraviolet absorbers, fluorescent whitening agents, adhesion improving agents, organic fillers, and the like. One type of these may be used alone, or two or more types may be used in combination.
(有機溶劑) 有機溶劑的說明,是與熱硬化性樹脂組成物[I]中的有機溶劑的說明相同。 (organic solvent) The description of the organic solvent is the same as the description of the organic solvent in the thermosetting resin composition [I].
[預浸體] 藉由本發明的製造方法來獲得的預浸體的尺寸變化量的偏差較小,並且,若使用前述熱硬化性樹脂組成物,則高耐熱性、高金屬箔黏著性、高玻璃轉移溫度、低熱膨脹性、成形性及均鍍性(雷射加工性)亦優異。 [Prepreg] The prepreg obtained by the manufacturing method of the present invention has small variation in dimensional change, and if the aforementioned thermosetting resin composition is used, it has high heat resistance, high metal foil adhesion, high glass transition temperature, and low It also has excellent thermal expansion, formability and throwing properties (laser processability).
此外,根據本發明,能夠提供下述預浸體。藉由本發明的製造方法來獲得的預浸體亦相當於下述預浸體。換言之,下述預浸體能夠藉由本發明的製造方法來製造。 一種預浸體,其是包含基材及熱硬化性樹脂組成物而成,且依照下述方法來求出的標準偏差σ為0.012%以下, 標準偏差σ的算出方法: 將厚度18 μm的銅箔重疊在1片預浸體的雙面上,並以190℃、2.45 MPa的條件進行90分鐘的加熱加壓成形,來製作厚度0.1 mm的雙面覆銅積層板;對於以上述方式獲得的雙面覆銅積層板,在該雙面覆銅積層板的面內的在第1圖中所記載的1~8處實施直徑1.0 mm的開孔;對在第1圖中所記載的縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點,使用影像測定機來對各3點之間的距離進行測定後,將各測定距離設為初期值;然後,將外層銅箔去除,並利用乾燥機以185℃加熱60分鐘;冷卻後,以與初期值的測定方法相同之方向,來對縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點之間的距離進行測定;根據相對於各測定距離的初期值的變化率[(加熱處理後的測定值-初期值)×100/初期值]來求出該等變化率的平均值,並算出相對於該平均值的標準偏差σ。 前述影像測定機無特別限制,能夠使用例如「QV-A808P1L-D」(Mitutoyo公司製)。 Furthermore, according to the present invention, the following prepreg can be provided. The prepreg obtained by the manufacturing method of the present invention also corresponds to the following prepreg. In other words, the following prepreg can be produced by the production method of the present invention. A prepreg consisting of a base material and a thermosetting resin composition and having a standard deviation σ of 0.012% or less as determined by the following method, How to calculate standard deviation σ: Copper foil with a thickness of 18 μm is overlapped on both sides of a prepreg, and heat and pressure molding is performed at 190°C and 2.45 MPa for 90 minutes to produce a double-sided copper-clad laminate with a thickness of 0.1 mm; For the double-sided copper-clad laminated board obtained in the above manner, holes with a diameter of 1.0 mm are made at locations 1 to 8 described in Figure 1 on the surface of the double-sided copper-clad laminated board; The vertical direction, which is the direction of 1-7, 2-6, and 3-5, and the transverse direction, which are the directions of 1-3, 8-4, and 7-5, are three points each. Use an image measuring machine. After measuring the distance between each three points, set each measured distance as the initial value; then, remove the outer copper foil and heat it with a dryer at 185°C for 60 minutes; after cooling, use the same measured distance as the initial value. In the same direction, use the vertical direction, which is the direction of 1-7, 2-6, 3-5, and the horizontal direction, which is between 3 points in the direction of 1-3, 8-4, and 7-5. The distance is measured; the average value of the change rates is calculated based on the change rate relative to the initial value of each measured distance [(measured value after heat treatment - initial value) × 100/initial value], and calculated relative to The standard deviation σ of this mean. The aforementioned image measuring machine is not particularly limited, and for example, “QV-A808P1L-D” (manufactured by Mitutoyo Corporation) can be used.
前述標準偏差σ以0.011%以下為佳,以0.010%以下較佳,以0.009%以下更佳。標準偏差σ的下限值無特別限制,通常為0.003%以上,可為0.005%以上,且亦可為0.006%以上,且亦可為0.007%以上。The standard deviation σ is preferably 0.011% or less, more preferably 0.010% or less, and more preferably 0.009% or less. The lower limit of the standard deviation σ is not particularly limited, but is usually 0.003% or more, may be 0.005% or more, may be 0.006% or more, and may be 0.007% or more.
[積層板] 本發明的積層板是包含前述預浸體與金屬箔而成。能夠藉由例如下述方式來製造:以使用1片前述預浸體或因應需要來將前述預浸體重疊2~20片並於其單面或雙面配置有金屬箔的構成來積層並成形。再者,有時將配置有金屬箔的積層板稱為覆金屬積層板。 金屬箔的金屬只要為電絕緣材料用途中所使用的金屬,則無特別限制,從導電性的觀點來看,金屬箔的金屬,較佳是銅、金、銀、鎳、鉑、鉬、釕、鋁、鎢、鐵、鈦、鉻、或包含此等金屬元素之中的至少1種的合金,更佳是銅、鋁,進一步更佳是銅。 積層板的成形條件能夠應用電絕緣材料用積層板及多層板的習知成形手法,能夠例如:使用多段加壓、多段真空加壓、連續成形、高壓釜成形機等,以溫度100~250℃、壓力0.2~10 MPa、加熱時間0.1~5小時來成形。 此外,亦能夠將本發明的預浸體與內層用印刷線路板組合且積層並成形來製造多層板。 金屬箔的厚度無特別限制,只要依印刷線路板的用途等來適當選擇即可。金屬箔的厚度以0.5~150 μm為佳,以1~100 μm較佳,以5~50 μm更佳,以5~30 μm特佳。 [Laminated board] The laminated board of the present invention contains the prepreg and metal foil. It can be produced, for example, by laminating and molding a structure in which one sheet of the above-mentioned prepreg is used or 2 to 20 sheets of the above-mentioned prepreg are stacked as necessary and a metal foil is arranged on one or both sides of the prepreg. . In addition, a laminated board on which metal foil is arranged may be called a metal-clad laminated board. The metal of the metal foil is not particularly limited as long as it is a metal used for electrical insulating materials. From the viewpoint of electrical conductivity, the metal of the metal foil is preferably copper, gold, silver, nickel, platinum, molybdenum, or ruthenium. , aluminum, tungsten, iron, titanium, chromium, or an alloy containing at least one of these metal elements, more preferably copper, aluminum, and even more preferably copper. The forming conditions of the laminated board can be based on conventional forming techniques of laminated boards and multi-layer boards for electrically insulating materials. For example, multi-stage pressurization, multi-stage vacuum pressurization, continuous forming, autoclave forming machines, etc. can be used at a temperature of 100 to 250°C. , pressure 0.2 ~ 10 MPa, heating time 0.1 ~ 5 hours to form. Furthermore, a multilayer board can also be produced by combining the prepreg of the present invention with an inner layer printed wiring board, laminating them, and molding them. The thickness of the metal foil is not particularly limited and may be appropriately selected depending on the use of the printed wiring board. The thickness of the metal foil is preferably 0.5 to 150 μm, preferably 1 to 100 μm, more preferably 5 to 50 μm, and particularly preferably 5 to 30 μm.
再者,亦較佳是藉由對金屬箔進行鍍覆來形成鍍覆層。 鍍覆層的金屬只要為能夠用於進行鍍覆的金屬,則無特別限制。鍍覆層的金屬較佳是從銅、金、銀、鎳、鉑、鉬、釕、鋁、鎢、鐵、鈦、鉻、及包含此等金屬元素之中的至少1種的合金之中選出。 作為鍍覆方法並無特別限制,能夠利用習知方法,例如:電解鍍覆法、無電解鍍覆法。 Furthermore, it is also preferable to form the plating layer by plating a metal foil. The metal of the plating layer is not particularly limited as long as it can be used for plating. The metal of the plating layer is preferably selected from copper, gold, silver, nickel, platinum, molybdenum, ruthenium, aluminum, tungsten, iron, titanium, chromium, and alloys containing at least one of these metal elements. . The plating method is not particularly limited, and conventional methods such as electrolytic plating and electroless plating can be used.
[印刷線路板] 本發明亦提供一種印刷線路板,其是包含前述預浸體或前述積層板而成。 本發明的印刷線路板能夠藉由下述方式來製造:對覆金屬積層板的金屬箔實施電路加工。電路加工能夠藉由例如下述方式來進行:於金屬箔表面形成阻劑圖案後,藉由蝕刻來將多餘部分的金屬箔去除,並將阻劑圖案剝離後,藉由鑽頭來形成需要的貫穿孔,並再次形成阻劑圖案後,對貫穿孔實施用以導通的鍍覆,最後將阻劑圖案剝離。能夠以下述方式製作成多層印刷線路板:在與前述相同的條件下進一步將上述覆金屬積層板積層於以上述方式獲得的印刷線路板的表面,並進一步與上述同樣地進行而進行電路加工。此時,不一定必須形成貫穿孔,亦可形成通孔,且亦可形成該等雙方。這樣的多層化是進行需要的片數。 [Printed circuit board] The present invention also provides a printed wiring board, which includes the aforementioned prepreg or the aforementioned laminated board. The printed wiring board of the present invention can be produced by subjecting the metal foil of the metal-clad laminate to circuit processing. Circuit processing can be performed by, for example, the following method: after forming a resist pattern on the surface of the metal foil, removing the excess metal foil by etching, peeling off the resist pattern, and then using a drill to form the required penetration. After forming the hole and forming the resist pattern again, the through hole is plated for conduction, and finally the resist pattern is peeled off. A multilayer printed wiring board can be produced by further laminating the metal-clad laminated board on the surface of the printed wiring board obtained as above under the same conditions as above, and further performing circuit processing in the same manner as above. At this time, it is not necessary to form a through hole, a through hole may be formed, and both of these may be formed. Such multi-layering is required for the number of slices required.
[半導體封裝體] 本發明的半導體封裝體是將半導體元件安裝在本發明的印刷線路板上而成。 本發明的半導體封裝體能夠以下述方式製造:將半導體晶片、記憶體等安裝在本發明的印刷線路板的既定位置上。 [實施例] [Semiconductor package] The semiconductor package of the present invention is formed by mounting a semiconductor element on the printed wiring board of the present invention. The semiconductor package of the present invention can be manufactured by mounting a semiconductor chip, memory, etc. on a predetermined position of the printed wiring board of the present invention. [Example]
其次,藉由下述實施例來更詳細說明本發明,但此等實施例在任何意義上皆並非用以限制本發明。使用本發明的熱硬化性樹脂組成物來製作:樹脂清漆、使用樹脂清漆來製得的預浸體前驅物、對該預浸體前驅物實施表面加熱處理而得的預浸體,並進一步製作覆銅積層板後,對所製得的覆銅積層板進行評估。評估方法是如下所示。Next, the present invention is described in more detail through the following examples, but these examples are not intended to limit the present invention in any sense. The thermosetting resin composition of the present invention is used to produce: a resin varnish, a prepreg precursor produced using the resin varnish, a prepreg obtained by subjecting the prepreg precursor to surface heat treatment, and further produce After cladding the copper-clad laminated board, the obtained copper-clad laminated board was evaluated. The evaluation method is as follows.
[評估方法] <1.耐熱性(回焊耐熱性)> 使用各例中所製得的四層覆銅積層板,並將最高到達溫度設為266℃,將使四層覆銅積層板在260℃以上的恆溫槽環境中流動30秒鐘設為1個循環,而求出直到能夠以肉眼來確認基板膨脹為止的循環數。循環數越多則耐熱性越優異。 [Evaluation method] <1. Heat resistance (reflow heat resistance)> Using the four-layer copper-clad laminate prepared in each example, and setting the maximum reaching temperature to 266°C, the four-layer copper-clad laminate will flow in a constant temperature bath environment above 260°C for 30 seconds. Cycles were performed to determine the number of cycles until expansion of the substrate could be visually confirmed. The greater the number of cycles, the better the heat resistance.
<2.相對介電常數(Dk)> 使用網路分析儀「8722C」(HP公司製),藉由三板結構直線線路共振器法,來實施1 GHz的雙面覆銅積層板的相對介電常數的測定。試驗片大小為200 mm×50 mm×厚度0.8 mm,藉由蝕刻來於1片雙面覆銅積層板的單面的中心形成寬1.0 mm的直線線路(線長200 mm),並使銅殘留在背面整面而設為地線層。對另一片雙面覆銅積層板,對單面整面進行蝕刻,並將背面設為地線層。將此等2片雙面覆銅積層板以使地線層成為外側的方式疊合,而製作成帶狀線路。測定是在25℃進行。 相對介電常數越小則越佳。 <2. Relative dielectric constant (Dk)> Using a network analyzer "8722C" (manufactured by HP), the relative dielectric constant of a 1 GHz double-sided copper-clad laminate was measured using a three-plate structure linear line resonator method. The size of the test piece is 200 mm × 50 mm × thickness 0.8 mm. A straight line with a width of 1.0 mm (line length 200 mm) is formed by etching from the center of one side of a double-sided copper-clad laminate, and the copper remains The entire back surface is provided as a ground layer. For another double-sided copper-clad laminate, etching the entire single side and setting the back side as the ground layer. These two double-sided copper-clad laminated boards are stacked so that the ground layer is on the outside to produce a strip line. The measurement was performed at 25°C. The smaller the relative dielectric constant, the better.
<3.金屬箔黏著性(銅箔剝離強度)> 金屬箔黏著性是藉由銅箔剝離強度來進行評估。藉由將各例中所製得的雙面覆銅積層板浸漬於銅蝕刻液「過硫酸銨(APS)」(ADEKA股份有限公司製)中來形成3 mm寬的銅箔,而製作評估基板,並使用高壓釜「AG-100C」(島津製作所股份有限公司製)來測定銅箔的剝離強度。值越大則顯示金屬箔黏著性越優異。 <3.Metal foil adhesion (copper foil peeling strength)> Metal foil adhesion is evaluated by copper foil peel strength. The double-sided copper-clad laminate prepared in each example was immersed in the copper etching solution "Ammonium Persulfate (APS)" (manufactured by ADEKA Co., Ltd.) to form a 3 mm wide copper foil, and an evaluation substrate was produced. , and the peel strength of the copper foil was measured using an autoclave "AG-100C" (manufactured by Shimadzu Corporation). The larger the value, the better the metal foil adhesion is.
<4.玻璃轉移溫度(Tg)> 藉由將各例中所製得的雙面覆銅積層板浸漬於銅蝕刻液「過硫酸銨(APS)」(ADEKA股份有限公司製)中來將銅箔去除,而製作5 mm見方的評估基板,並使用熱機械分析(TMA)試驗裝置「Q400EM」(TA instruments公司製),來觀察評估基板的面方向(Z方向)在30~260℃的熱膨脹特性,並將膨脹量的反曲點設為玻璃轉移溫度。 <4. Glass transition temperature (Tg)> The double-sided copper-clad laminates produced in each example were immersed in the copper etching solution "Ammonium Persulfate (APS)" (manufactured by ADEKA Co., Ltd.) to remove the copper foil and produce a 5 mm square evaluation The thermal expansion characteristics of the substrate in the surface direction (Z direction) of the substrate at 30 to 260°C are observed and evaluated using a thermomechanical analysis (TMA) test device "Q400EM" (manufactured by TA Instruments), and the inflection point of the expansion amount is Set to glass transition temperature.
<5.低熱膨脹性> 藉由將各例中所製得的雙面覆銅積層板浸漬於銅蝕刻液「過硫酸銨(APS)」(ADEKA股份有限公司製)中來將銅箔去除,而製作5 mm見方的評估基板,並使用TMA試驗裝置「Q400EM」(TA instruments公司製),來測定評估基板的面方向的熱膨脹係數(線膨脹係數)。再者,為了將樣品具有的熱應變的影響去除,而重複進行2次升溫-冷卻循環後,測定第2次的溫度位移圖表的30℃~260℃的熱膨脹係數[ppm/℃],並設為低熱膨脹性的指標。值越小則低熱膨脹性越優異。再者,表中是以區分開的方式記載為未達Tg(標示為「<Tg」)時的熱膨脹係數及超過Tg(標示為「>Tg」)時的熱膨脹係數。 測定條件 1 stRun:室溫→210℃(升溫速度10℃/min) 2 ndRun:0℃→270℃(升溫速度10℃/min) 覆銅積層板正被期望進一步薄型化,亦配合此期望而正在研究用以構成覆銅積層板的預浸體的薄型化。經薄型化的預浸體由於容易翹曲,故期望熱處理時的預浸體的翹曲較小。為了降低翹曲,較有效的方法是使基材的面方向的熱膨脹係數較小。 <5. Low thermal expansion> The copper foil was removed by immersing the double-sided copper-clad laminate produced in each example in the copper etching solution "ammonium persulfate (APS)" (manufactured by ADEKA Co., Ltd.). A 5 mm square evaluation substrate was produced, and the thermal expansion coefficient (linear expansion coefficient) in the surface direction of the evaluation substrate was measured using the TMA test device "Q400EM" (manufactured by TA Instruments). In addition, in order to remove the influence of thermal strain of the sample, after repeating the heating-cooling cycle twice, the thermal expansion coefficient [ppm/°C] of 30°C to 260°C in the second temperature displacement graph was measured, and set An indicator of low thermal expansion. The smaller the value, the more excellent the low thermal expansion property. In addition, the thermal expansion coefficient when Tg is not reached (marked as "<Tg") and the thermal expansion coefficient when it exceeds Tg (marked as ">Tg") are separately described in the table. Measurement conditions 1st Run: Room temperature → 210°C (heating rate 10°C/min) 2nd Run: 0°C → 270°C (heating rate 10°C/min) Copper-clad laminated boards are expected to be further thinned, and this is also in line with this Desirably, thinning of prepregs constituting copper-clad laminates is being studied. Since a thinned prepreg is prone to warpage, it is desired that the prepreg has less warpage during heat treatment. In order to reduce warpage, a more effective method is to make the thermal expansion coefficient in the surface direction of the base material smaller.
<6.均鍍性(雷射加工性)> 對各例中所製得的四層覆銅積層板,使用雷射機器「LC-2F21B/2C」(日立Via Mechanics股份有限公司製),藉由目標孔徑80 μm、高斯(Gaussian)、循環模式來進行銅直接法、脈衝寬15 μs×1次、7 μs×4次,而實施雷射開孔。 對於所獲得的雷射開孔基板,在70℃5分鐘的條件下使用膨潤液「Swelling Dip Securiganth P」(Atotech Japan股份有限公司製),在70℃9分鐘的條件下使用粗糙化液「Dosing Securiganth P500J」(Atotech Japan股份有限公司製),在40℃5分鐘的條件下使用中和液「Reduction Conditioner Securiganth P500」(Atotech Japan股份有限公司製),來實施除膠渣處理。然後,在30℃使用無電解鍍覆液「Priganth MSK-DK」(Atotech Japan股份有限公司製)20分鐘,並在24℃、2 A/dm 2使用電鍍液「Cupracid HL」(Atotech Japan股份有限公司製)2小時,來對雷射加工基板實施鍍覆。 對所獲得的雷射開孔基板實施剖面觀察,而確認均鍍性。作為均鍍性的評估方法,因均鍍性較佳是雷射孔上部的鍍層厚度與雷射孔底部的鍍層厚度之間的差值為雷射孔上部的鍍層厚度的10%以內,因此,求出此範圍中所含的孔在100孔中的存在比例(%)。 <6. Throwing property (laser processability)> For the four-layer copper-clad laminate produced in each example, a laser machine "LC-2F21B/2C" (manufactured by Hitachi Via Mechanics Co., Ltd.) was used. Laser drilling was performed using the copper direct method with a target aperture of 80 μm, Gaussian, and cyclic mode, with a pulse width of 15 μs × 1 time and 7 μs × 4 times. For the obtained laser-opened substrate, a swelling liquid "Swelling Dip Securiganth P" (manufactured by Atotech Japan Co., Ltd.) was used at 70°C for 5 minutes, and a roughening liquid "Dosing" was used at 70°C for 9 minutes. Securiganth P500J" (manufactured by Atotech Japan Co., Ltd.), and perform desmear treatment using a neutralizing liquid "Reduction Conditioner Securiganth P500" (manufactured by Atotech Japan Co., Ltd.) at 40°C for 5 minutes. Then, an electroless plating solution "Priganth MSK-DK" (manufactured by Atotech Japan Co., Ltd.) was used at 30°C for 20 minutes, and a plating solution "Cupracid HL" (manufactured by Atotech Japan Co., Ltd.) was used at 24°C and 2 A/ dm2 . Company-made) 2 hours to perform plating on the laser processing substrate. A cross-section of the obtained laser-opened substrate was observed to confirm the throwability. As an evaluation method of throwing property, because the throwing property is better when the difference between the coating thickness at the top of the laser hole and the coating thickness at the bottom of the laser hole is within 10% of the coating thickness at the top of the laser hole, therefore, Find the ratio (%) of pores included in this range among 100 pores.
<7.成形性> 對各例中所製得的四層覆銅積層板,將外層銅去除後,以肉眼來確認340 mm×500 mm的面內有無孔洞及擦傷,並設為成形性的指標。當無孔洞及擦傷時表示為「良好」,當有孔洞或擦傷時將該情形表示出。當無孔洞及擦傷時可謂成形性良好。 <7. Formability> For the four-layer copper-clad laminated board produced in each example, after removing the outer copper layer, the presence or absence of holes and scratches in the 340 mm × 500 mm surface was visually confirmed, and this was used as an indicator of formability. When there are no holes or scratches, it is indicated as "good". When there are holes or scratches, this condition is indicated. When there are no holes or scratches, it can be said to have good formability.
<8.尺寸變化量的偏差的評估> 對各例中所製得的雙面覆銅積層板,如同第1圖所示實施直徑1.0 mm的開孔。如同第1圖中所記載,對玻璃布的縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點,使用影像測定機「QV-A808P1L-D」(Mitutoyo股份有限公司製)來對各3點之間的距離進行測定後,將各測定距離設為初期值。然後,將外層銅箔去除,並利用乾燥機以185℃加熱60分鐘。冷卻後,以與初期值的測定方法同樣地進行,來對縱線方向也就是1-7、2-6、3-5的方向及橫線方向也就是1-3、8-4、7-5的方向的各3點之間的距離進行測定。根據相對於各測定距離的初期值的變化率[(測定值-初期值)×100/初期值]來求出該等變化率的平均值,並算出相對於該平均值的標準偏差σ,將該標準偏差σ設為尺寸變化量的偏差的指標。標準偏差σ的值較小表示尺寸變化量的偏差較小而較佳。 <8. Evaluation of deviations in dimensional change> For the double-sided copper-clad laminate produced in each example, holes with a diameter of 1.0 mm were made as shown in Figure 1. As recorded in Figure 1, the vertical direction of the glass cloth is the direction of 1-7, 2-6, 3-5 and the horizontal direction is the direction of 1-3, 8-4, 7-5. After measuring the distance between each of the three points using an image measuring machine "QV-A808P1L-D" (manufactured by Mitutoyo Co., Ltd.), each measured distance is set as an initial value. Then, the outer copper foil was removed and heated at 185° C. for 60 minutes using a dryer. After cooling, proceed in the same manner as the initial value measurement method to measure the longitudinal direction, that is, the direction of 1-7, 2-6, 3-5, and the transverse direction, that is, 1-3, 8-4, 7- The distance between each three points in the direction of 5 is measured. The average value of the change rates with respect to the initial value of each measured distance is calculated [(measured value - initial value) × 100/initial value], and the standard deviation σ with respect to the average value is calculated. This standard deviation σ is an index of the variation in the amount of dimensional change. A smaller value of the standard deviation σ means that the variation in the dimensional change amount is smaller and is preferable.
以下,說明實施例及比較例中所使用的各成分。Each component used in Examples and Comparative Examples will be described below.
(A)成分:使用下述製造例1中所製得的馬來醯亞胺化合物(A)的溶液。 [製造例1] 在具備溫度計、攪拌裝置及裝有回流冷卻管的水分定量器之容積1 L的反應容器中,加入4,4’-二胺基二苯基甲烷19.2 g、雙(4-馬來醯亞胺基苯基)甲烷174.0 g、對胺基苯酚6.6 g及二甲基乙醯胺330.0 g,並在100℃使其進行反應2小時,而獲得具有酸性取代基及N-取代馬來醯亞胺基之馬來醯亞胺化合物(A)(Mw=1,370)的二甲基乙醯胺溶液,並作為(A)成分使用。 再者,上述重量平均分子量(Mw)是藉由凝膠滲透層析法(GPC),從使用標準聚苯乙烯的校準曲線換算。校準曲線是使用標準聚苯乙烯:TSK standard POLYSTYRENE(型號:A-2500、A-5000、F-1、F-2、F-4、F-10、F-20、F-40)[東曹股份有限公司製]以三次方程式來進行近似。GPC的條件是如下所示。 裝置:(泵:L-6200型[日立High-Technologies股份有限公司製])、 (偵測器:L-3300型RI[日立High-Technologies股份有限公司製])、 (管柱烘箱:L-655A-52[日立High-Technologies股份有限公司製]) 管柱:TSKgel SuperHZ2000+TSKgel SuperHZ2300(皆為東曹股份有限公司製) 管柱大小:6.0×40 mm(保護管柱),7.8×300 mm(管柱) 溶析液:四氫呋喃 樣品濃度:20 mg/5 mL 注入量:10 μL 流量:0.5 mL/分鐘 測定溫度:40℃ (A) Component: The solution of the maleimide compound (A) prepared in the following Production Example 1 was used. [Manufacturing Example 1] In a reaction vessel with a volume of 1 L equipped with a thermometer, a stirring device and a moisture meter equipped with a reflux cooling tube, add 19.2 g of 4,4'-diaminodiphenylmethane and bis(4-maleimide) 174.0 g of phenyl)methane, 6.6 g of p-aminophenol and 330.0 g of dimethylacetamide, and reacted at 100°C for 2 hours to obtain an acidic substituent and N-substituted maleimide. A dimethylacetamide solution of a maleimide compound (A) (Mw=1,370) was used as component (A). In addition, the above-mentioned weight average molecular weight (Mw) is converted from a calibration curve using standard polystyrene by gel permeation chromatography (GPC). The calibration curve uses standard polystyrene: TSK standard POLYSTYRENE (model: A-2500, A-5000, F-1, F-2, F-4, F-10, F-20, F-40) [Tosoh Limited company] is approximated by a cubic equation. The conditions for GPC are as follows. Device: (Pump: Model L-6200 [manufactured by Hitachi High-Technologies Co., Ltd.]), (Detector: L-3300 type RI [manufactured by Hitachi High-Technologies Co., Ltd.]), (Column oven: L-655A-52 [manufactured by Hitachi High-Technologies Co., Ltd.]) Column: TSKgel SuperHZ2000 + TSKgel SuperHZ2300 (both manufactured by Tosoh Co., Ltd.) Column size: 6.0×40 mm (protection column), 7.8×300 mm (column) Eluate: Tetrahydrofuran Sample concentration: 20 mg/5 mL Injection volume: 10 μL Flow: 0.5 mL/min Measuring temperature: 40℃
(B)成分:甲酚酚醛清漆型環氧樹脂「EPICLON(註冊商標) N-673」(DIC股份有限公司製) (C-1)成分:「SMA(註冊商標) EF40」(苯乙烯/馬來酸酐=4,Mw=11,000,CRAY VALEY公司製) (C-2)成分:「SMA(註冊商標) 3000」(苯乙烯/馬來酸酐=2,Mw=7,500,CRAY VALEY公司製) (C-3)成分:「SMA(註冊商標) EF80」(苯乙烯/馬來酸酐=8,Mw=14,400,CRAY VALEY公司製) (C-4)成分:「SMA(註冊商標) 1000」(苯乙烯/馬來酸酐=1,Mw=5,000,CRAY VALEY公司製) (B) Component: Cresol novolak type epoxy resin "EPICLON (registered trademark) N-673" (manufactured by DIC Co., Ltd.) (C-1) Ingredient: "SMA (registered trademark) EF40" (styrene/maleic anhydride = 4, Mw = 11,000, manufactured by CRAY VALEY Co., Ltd.) (C-2) Ingredient: "SMA (registered trademark) 3000" (styrene/maleic anhydride = 2, Mw = 7,500, manufactured by CRAY VALEY Co., Ltd.) (C-3) Ingredients: "SMA (registered trademark) EF80" (styrene/maleic anhydride = 8, Mw = 14,400, manufactured by CRAY VALEY) (C-4) Ingredients: "SMA (registered trademark) 1000" (styrene/maleic anhydride = 1, Mw = 5,000, manufactured by CRAY VALEY Co., Ltd.)
(D)成分:經藉由胺基矽烷系耦合劑來進行處理後的熔融氧化矽(平均粒徑:1.9 μm,比表面積5.8 m 2/g) 其它無機填充材料:「F05-30」(未進行處理的粉碎氧化矽,平均粒徑:4.2 μm,比表面積5.8 m 2/g,福島窯業股份有限公司製) (D) Component: Fused silica treated with an aminosilane coupling agent (average particle size: 1.9 μm, specific surface area 5.8 m 2 /g) Other inorganic filler materials: "F05-30" (not yet available) Processed pulverized silica, average particle diameter: 4.2 μm, specific surface area 5.8 m 2 /g, manufactured by Fukushima Kiln Co., Ltd.)
(E)成分:雙氰胺(日本CARBIDE工業股份有限公司製) (F)成分:「PX-200」(芳香族磷酸酯(參照下述結構式),大八化學工業股份有限公司製) (E) Component: Dicyandiamide (manufactured by Japan CARBIDE Industrial Co., Ltd.) (F) Component: "PX-200" (aromatic phosphate (refer to the structural formula below), manufactured by Daihachi Chemical Industry Co., Ltd.)
[實施例1~13、比較例1~4] 如同下述表1~4調配如上所示的各成分(其中,當為溶液時是表示以固體成分來換算的量),並且以使溶液的非揮發份成為65~75質量%的方式額外加入甲基乙基酮,而針對各實施例及各比較例的熱硬化性樹脂組成物調製樹脂清漆。 使所獲得的各樹脂清漆含浸於IPC規格#3313的玻璃布(0.1 mm)中,並使用設定在溫度160℃的平板加熱器來乾燥4分鐘而進行B階段化(步驟1)後,在室溫(約20℃)放置冷卻(步驟2),而獲得預浸體前驅物。再者,比較例中是在維持預浸體前驅物的狀態下直接作為預浸體使用。 在各實施例中,使用將表面加熱溫度設定在500℃的平板加熱器來對所獲得的預浸體前驅物進行表面加熱處理(製品表面溫度70℃)3秒,然後冷卻直到室溫(約20℃)為止,來製作預浸體(步驟3)。 [Examples 1 to 13, Comparative Examples 1 to 4] Each component shown above is prepared as shown in the following Tables 1 to 4 (wherein, when it is a solution, it means the amount converted to solid content), and additionally added so that the non-volatile content of the solution becomes 65 to 75% by mass. Methyl ethyl ketone was used to prepare a resin varnish based on the thermosetting resin composition of each example and each comparative example. Each of the resin varnishes obtained was impregnated into glass cloth (0.1 mm) of IPC standard #3313, and dried for 4 minutes using a flat heater set at 160° C. to perform B-stage formation (step 1), and then placed in a room Warm (about 20° C.) and allow to cool (step 2) to obtain a prepreg precursor. Furthermore, in the comparative example, the prepreg precursor was used directly as a prepreg while maintaining the state. In each embodiment, the obtained prepreg precursor was subjected to surface heating treatment (product surface temperature 70°C) for 3 seconds using a flat plate heater with the surface heating temperature set at 500°C, and then cooled to room temperature (approximately 20°C) to prepare prepreg (step 3).
(雙面覆銅積層板的製作及性能評估) 將前述預浸體重疊8片後,將厚度18 μm的銅箔「3EC-VLP-18」(三井金屬股份有限公司製)重疊在其雙面,並在溫度190℃、壓力25 kgf/cm 2(2.45 MPa)加熱加壓成形90分鐘,來製作厚度0.8 mm(預浸體8片份)的雙面覆銅積層板後,使用該覆銅積層板,依照前述方法,來測定及評估相對介電常數、金屬箔黏著性、玻璃轉移溫度(Tg)及低熱膨脹性。 此外,將厚度18 μm的銅箔「3EC-VLP-18」(三井金屬股份有限公司製)重疊在1片預浸體的雙面上,並以190℃、壓力25 kgf/cm 2(2.45 MPa)加熱加壓成形90分鐘,而製作厚度0.1 mm(預浸體1片份)的雙面覆銅積層板後,使用該雙面覆銅積層板,依照前述方法,來測定及評估尺寸變化量的偏差。 (Preparation and performance evaluation of double-sided copper-clad laminates) After stacking eight pieces of the aforementioned prepregs, 18 μm-thick copper foil "3EC-VLP-18" (manufactured by Mitsui Metals Co., Ltd.) was stacked on both sides. , and heat and press mold at a temperature of 190°C and a pressure of 25 kgf/cm 2 (2.45 MPa) for 90 minutes to produce a double-sided copper-clad laminate with a thickness of 0.8 mm (prepreg 8 pieces), and then use the copper-clad laminate For laminates, the relative dielectric constant, metal foil adhesion, glass transition temperature (Tg) and low thermal expansion are measured and evaluated according to the aforementioned methods. In addition, a copper foil "3EC-VLP-18" (manufactured by Mitsui Metals Co., Ltd.) with a thickness of 18 μm was laminated on both sides of one prepreg, and the temperature was maintained at 190°C and a pressure of 25 kgf/cm 2 (2.45 MPa). ) is heated and pressurized for 90 minutes to produce a double-sided copper-clad laminated board with a thickness of 0.1 mm (1 piece of prepreg). The double-sided copper-clad laminated board is used to measure and evaluate the dimensional change according to the above method. deviation.
(四層覆銅積層板的製作及性能評估) 另一方面,使用1片前述預浸體,將厚度18 μm的銅箔「YGP-18」(日本電解股份有限公司製)重疊在其雙面,並以溫度190℃、壓力25 kgf/cm 2(2.45 MPa)加熱加壓成形90分鐘,而製作厚度0.1 mm(預浸體1片份)的雙面覆銅積層板後,對兩銅箔面實施內層密合處理(使用「BF處理液」(日立化成股份有限公司製)),以將厚度0.05 mm的預浸體每次重疊1片的方式將厚度18 μm的銅箔「YGP-18」(日本電解股份有限公司製)重疊在其雙面上,並以溫度190℃、壓力25 kgf/cm 2(2.45 MPa)加熱加壓成形90分鐘,而製作四層覆銅積層板。使用該四層覆銅積層板,依照前述方法,來實施耐熱性、均鍍性及成形性的評估。 結果是如表1~4所示。 (Production and performance evaluation of a four-layer copper-clad laminate) On the other hand, one piece of the above-mentioned prepreg was used, and a copper foil "YGP-18" (manufactured by Nippon Electrolytic Co., Ltd.) with a thickness of 18 μm was laminated on both sides of the prepreg. , and heat and press it for 90 minutes at a temperature of 190°C and a pressure of 25 kgf/cm 2 (2.45 MPa) to produce a double-sided copper-clad laminate with a thickness of 0.1 mm (1 piece of prepreg). The inner layer adhesion treatment (using "BF treatment liquid" (manufactured by Hitachi Chemical Co., Ltd.)) was performed on the surface, and the 18 μm-thick copper foil "YGP- 18" (manufactured by Nippon Electrolytic Co., Ltd.) was stacked on both sides, and heated and pressurized at a temperature of 190°C and a pressure of 25 kgf/cm 2 (2.45 MPa) for 90 minutes to produce a four-layer copper-clad laminate. Using this four-layer copper-clad laminated board, heat resistance, throwing properties, and formability were evaluated according to the method described above. The results are shown in Tables 1 to 4.
[表1] [Table 1]
[表2] [Table 2]
[表3] [table 3]
[表4] [Table 4]
[實施例14] 使用下述成分來調製樹脂清漆,取代在實施例1中調製樹脂清漆。 將聯苯芳烷基酚醛清漆型環氧樹脂(日本化藥股份有限公司製,商品名:NC-3000,環氧當量:280~300 g/eq)19質量份、甲酚酚醛清漆樹脂(DIC股份有限公司製,商品名:KA-1165,羥基當量:119 g/eq)16質量份、2-乙基-4-甲基咪唑(四國化成工業股份有限公司製)0.02質量份、熔融氧化矽(Admatechs股份有限公司製,經以胺基矽烷耦合劑來進行處理的熔融氧化矽,平均粒徑:2 μm)65質量份混合,並以溶劑(甲基乙基酮)來稀釋,藉此調製樹脂清漆(固體成分濃度:70質量%)。 其它步驟與實施例1同樣地進行,藉此獲得預浸體。使用所獲得的預浸體,藉由與實施例1相同的方法來製作雙面覆銅積層板,使用該雙面覆銅積層板來測定及評估尺寸變化量的偏差後,結果標準偏差σ的值為0.010%。 [Example 14] The following components were used to prepare a resin varnish instead of preparing the resin varnish in Example 1. 19 parts by mass of biphenyl aralkyl novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC-3000, epoxy equivalent: 280 to 300 g/eq), cresol novolak resin (DIC Co., Ltd., trade name: KA-1165, hydroxyl equivalent: 119 g/eq) 16 parts by mass, 0.02 parts by mass of 2-ethyl-4-methylimidazole (manufactured by Shikoku Chemical Industry Co., Ltd.), melt oxidation 65 parts by mass of silicon (manufactured by Admatechs Co., Ltd., fused silicon oxide treated with an aminosilane coupling agent, average particle size: 2 μm) was mixed and diluted with a solvent (methyl ethyl ketone), thereby A resin varnish (solid content concentration: 70% by mass) was prepared. Other steps were performed in the same manner as in Example 1, thereby obtaining a prepreg. Using the obtained prepreg, a double-sided copper-clad laminated board was produced in the same manner as in Example 1. The deviation of the dimensional change amount was measured and evaluated using the double-sided copper-clad laminated board. As a result, the standard deviation σ was The value is 0.010%.
[實施例15] 使用下述成分來調製樹脂清漆,取代在實施例1中調製樹脂清漆。 在裝有攪拌裝置、裝有回流冷卻管的水分定量器的能夠進行加熱及冷卻之容積2 L的反應容器中,加入KF-8010(兩末端胺改質矽氧油,信越化學工業股份有限公司製)75.7 g、雙(4-馬來醯亞胺基苯基)甲烷(大和化成工業股份有限公司製,商品名:BMI-1000)168.0 g、對胺基苯酚(東京化成股份有限公司製)6.4 g、及溶劑(甲基乙基酮)250.0 g,並在100℃使其進行反應3小時,藉此獲得矽氧改質馬來醯亞胺化合物。將該矽氧改質馬來醯亞胺化合物49.5質量份、熔融氧化矽50質量份(Admatechs股份有限公司製,經以胺基矽烷耦合劑來進行處理的熔融氧化矽)、及異氰酸基遮蔽咪唑0.5質量份(第一工業製藥股份有限公司製,商品名:G-8009L)混合,並以溶劑(甲基乙基酮)來稀釋,藉此調製樹脂清漆(固體成分濃度:70質量%)。 其它步驟與實施例1同樣地進行,藉此獲得預浸體。使用所獲得的預浸體,藉由與實施例1相同的方法來製作雙面覆銅積層板,使用該雙面覆銅積層板來測定及評估尺寸變化量的偏差後,結果標準偏差σ的值為0.009%。 [Example 15] The following components were used to prepare a resin varnish instead of preparing the resin varnish in Example 1. In a 2 L reaction vessel equipped with a stirring device and a moisture meter equipped with a reflux cooling tube, which can be heated and cooled, add KF-8010 (both terminal amine modified silicone oil, Shin-Etsu Chemical Industry Co., Ltd. (manufactured by Yamato Chemical Industry Co., Ltd., trade name: BMI-1000) 75.7 g, 168.0 g of bis(4-maleimidophenyl)methane (manufactured by Yamato Chemical Industry Co., Ltd., trade name: BMI-1000), p-aminophenol (manufactured by Tokyo Chemical Industry Co., Ltd.) 6.4 g, and 250.0 g of solvent (methyl ethyl ketone), and reacted at 100°C for 3 hours, thereby obtaining a silicone-modified maleimide compound. 49.5 parts by mass of this silica-modified maleimine compound, 50 parts by mass of fused silica (manufactured by Admatechs Co., Ltd., fused silica treated with an aminosilane coupling agent), and isocyanate 0.5 parts by mass of masking imidazole (trade name: G-8009L, manufactured by Daiichi Industrial Pharmaceutical Co., Ltd.) was mixed and diluted with a solvent (methyl ethyl ketone) to prepare a resin varnish (solid content concentration: 70 mass% ). Other steps were performed in the same manner as in Example 1, thereby obtaining a prepreg. Using the obtained prepreg, a double-sided copper-clad laminated board was produced in the same manner as in Example 1. The deviation of the dimensional change amount was measured and evaluated using the double-sided copper-clad laminated board. As a result, the standard deviation σ was The value is 0.009%.
由上述結果可知下述事實。 實施例中,由於對預浸體前驅物實施表面加熱處理,故標準偏差σ較未實施表面加熱處理的比較例更加減少,而能夠充分抑制尺寸變化量的偏差。 此外,實施例1~13中,回焊耐熱性達成耐熱要求等級以上的10個循環以上,並且獲得低相對介電常數、高金屬箔黏著性及高玻璃轉移溫度,且顯示低熱膨脹性。此外,因具有玻璃布從壁面突出和適度的粗糙化形狀,因此,確認具有良好的均鍍性。在成形性方面,樹脂的填埋性亦良好,而無法確認到有擦傷及孔洞等異常。此等之中,相較於實施例11~13,實施例1~10中,相對介電常數及金屬箔黏著性更良好,且亦穩定地顯現其它特性。 [產業上的可利用性] From the above results, the following facts are known. In the Examples, since the prepreg precursor was subjected to surface heat treatment, the standard deviation σ was reduced compared with the comparative example in which the surface heat treatment was not carried out, and the variation in the dimensional change amount could be sufficiently suppressed. In addition, in Examples 1 to 13, the reflow heat resistance reached more than 10 cycles above the required heat resistance level, and low relative dielectric constant, high metal foil adhesion and high glass transition temperature were obtained, and low thermal expansion was exhibited. In addition, since the glass cloth protruded from the wall surface and had a moderately roughened shape, it was confirmed that it had good throw plating properties. In terms of formability, the filling properties of the resin were also good, and no abnormalities such as scratches or holes were observed. Among them, in Examples 1 to 10, compared with Examples 11 to 13, the relative dielectric constant and metal foil adhesion are better, and other characteristics are also stably exhibited. [Industrial availability]
藉由本發明來獲得的預浸體及包含該預浸體而成的積層板由於尺寸變化量的偏差較小,故有用於作為電子機器用的印刷線路板。Since the prepreg obtained by the present invention and the laminate containing the prepreg have small variation in dimensional change, they are useful as printed wiring boards for electronic devices.
第1圖是在實施例中測定尺寸變化量的偏差時所使用的評估基板的概略圖。Fig. 1 is a schematic diagram of an evaluation substrate used when measuring variation in dimensional change amounts in Examples.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU540230B2 (en) | 1978-10-20 | 1984-11-08 | Desai Polymer Developments Ltd. | Phenolic resins |
JPS56133355A (en) | 1980-03-24 | 1981-10-19 | Mitsubishi Gas Chem Co Inc | Curable polyphenylene ether resin composition |
JPS5869046A (en) | 1981-10-21 | 1983-04-25 | 旭化成株式会社 | Laminated board and its molding method |
JPS58164638A (en) | 1982-03-25 | 1983-09-29 | Mitsubishi Gas Chem Co Inc | Curable resin composition |
JPS6118937A (en) | 1984-07-06 | 1986-01-27 | Mitsubishi Electric Corp | Lighting device of industrial telecamera |
JPH0669746B2 (en) | 1985-06-13 | 1994-09-07 | 松下電工株式会社 | Laminated board and its manufacturing method |
JPS62148512A (en) | 1985-12-23 | 1987-07-02 | Matsushita Electric Works Ltd | Modification of solidified polyphenylene oxide |
JPH0726013B2 (en) | 1989-02-08 | 1995-03-22 | 旭化成工業株式会社 | Curable polyphenylene ether resin composition, and composite material and laminate using the same |
JP3178925B2 (en) | 1992-12-15 | 2001-06-25 | 旭化成株式会社 | Curable resin composition |
JPH06306194A (en) * | 1993-04-26 | 1994-11-01 | Matsushita Electric Works Ltd | Production of prerreg for multilayer printed wiring board |
JPH09174546A (en) * | 1995-12-25 | 1997-07-08 | Matsushita Electric Works Ltd | Manufacture of prepreg |
JP2003008232A (en) * | 2001-06-20 | 2003-01-10 | Matsushita Electric Works Ltd | Method of manufacturing prepreg |
JP2006052473A (en) * | 2002-08-29 | 2006-02-23 | Asahi Schwebel Co Ltd | Glass cloth and printed wiring board |
JP4292946B2 (en) * | 2003-10-24 | 2009-07-08 | 日立化成工業株式会社 | Method for manufacturing printed wiring board substrate |
MY154599A (en) * | 2006-10-06 | 2015-06-30 | Sumitomo Bakelite Co | Resin composition, insulating sheet with base, prepreg, multilayer printed wiring board and semiconductor device |
JP5320382B2 (en) | 2010-12-24 | 2013-10-23 | 株式会社前川製作所 | Method and apparatus for defrosting air refrigerant refrigeration system |
JP2012236920A (en) | 2011-05-12 | 2012-12-06 | Hitachi Chemical Co Ltd | Thermosetting resin composition, and prepreg, laminate and printed-wiring board using the composition |
RU2014110182A (en) | 2011-08-18 | 2015-09-27 | ДАУ ГЛОБАЛ ТЕКНОЛОДЖИС ЭлЭлСи | CURABLE POLYMER COMPOSITIONS |
JP5920353B2 (en) * | 2011-09-27 | 2016-05-18 | 日立化成株式会社 | Boron nitride particles, epoxy resin composition, semi-cured resin composition, cured resin composition, resin sheet, exothermic electronic component, and method for producing boron nitride particles |
JP6384711B2 (en) * | 2014-06-23 | 2018-09-05 | 日立化成株式会社 | Insulating resin composition, prepreg using the same, and laminate for printed wiring board |
JP2016203397A (en) * | 2015-04-15 | 2016-12-08 | 東邦テナックス株式会社 | Method for producing prepreg |
JP6676884B2 (en) * | 2015-06-02 | 2020-04-08 | 日立化成株式会社 | Thermosetting resin composition, prepreg, laminated board and printed wiring board |
WO2016194927A1 (en) * | 2015-06-02 | 2016-12-08 | 日立化成株式会社 | Thermosetting resin composition, prepreg, laminate, and printed circuit board |
JP6701630B2 (en) * | 2015-06-02 | 2020-05-27 | 日立化成株式会社 | Thermosetting resin composition, prepreg, laminated board and printed wiring board |
US11139117B2 (en) | 2018-04-13 | 2021-10-05 | Avx Corporation | Solid electrolytic capacitor containing a sequential vapor-deposited interior conductive polymer film |
-
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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