TWI818094B - Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coating, surface protective film and electronic parts - Google Patents
Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coating, surface protective film and electronic parts Download PDFInfo
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- TWI818094B TWI818094B TW108135764A TW108135764A TWI818094B TW I818094 B TWI818094 B TW I818094B TW 108135764 A TW108135764 A TW 108135764A TW 108135764 A TW108135764 A TW 108135764A TW I818094 B TWI818094 B TW I818094B
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- photosensitive resin
- component
- resin composition
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- 239000011342 resin composition Substances 0.000 title claims abstract description 62
- 238000000576 coating method Methods 0.000 title claims description 20
- 239000011229 interlayer Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011248 coating agent Substances 0.000 title claims description 17
- 230000001681 protective effect Effects 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- 239000000178 monomer Substances 0.000 claims abstract description 21
- 239000004642 Polyimide Substances 0.000 claims abstract description 14
- 229920001721 polyimide Polymers 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 239000003999 initiator Substances 0.000 claims abstract description 5
- 125000005577 anthracene group Chemical group 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 56
- 239000011347 resin Substances 0.000 claims description 56
- -1 diethoxyethyl Chemical group 0.000 claims description 28
- 125000001931 aliphatic group Chemical group 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 125000003118 aryl group Chemical group 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 10
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- GJNKQJAJXSUJBO-UHFFFAOYSA-N 9,10-diethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 GJNKQJAJXSUJBO-UHFFFAOYSA-N 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 125000001072 heteroaryl group Chemical group 0.000 claims description 4
- 239000003505 polymerization initiator Substances 0.000 claims description 4
- 238000012719 thermal polymerization Methods 0.000 claims description 4
- BWSIKJKXQWLTLS-UHFFFAOYSA-N 1,2-dimethoxyanthracene Chemical compound C1=CC=CC2=CC3=C(OC)C(OC)=CC=C3C=C21 BWSIKJKXQWLTLS-UHFFFAOYSA-N 0.000 claims description 2
- 238000011161 development Methods 0.000 description 39
- 239000000047 product Substances 0.000 description 39
- 239000000126 substance Substances 0.000 description 36
- 239000003112 inhibitor Substances 0.000 description 24
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- 239000004615 ingredient Substances 0.000 description 17
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 16
- 239000006087 Silane Coupling Agent Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 238000006116 polymerization reaction Methods 0.000 description 15
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- 239000003431 cross linking reagent Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000002923 oximes Chemical class 0.000 description 7
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 238000013035 low temperature curing Methods 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 4
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAZWDJGLIYNYMU-UHFFFAOYSA-N Leucocrystal Violet Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 OAZWDJGLIYNYMU-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- KLQVBEXCUCUXDP-UHFFFAOYSA-N 1-(2,2-diethoxyethyl)anthracene Chemical compound C(C)OC(CC1=CC=CC2=CC3=CC=CC=C3C=C12)OCC KLQVBEXCUCUXDP-UHFFFAOYSA-N 0.000 description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
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- RBGUKBSLNOTVCD-UHFFFAOYSA-N 1-methylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C RBGUKBSLNOTVCD-UHFFFAOYSA-N 0.000 description 2
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 2
- JTSXFTWPBWFCPA-UHFFFAOYSA-N 2,2,5-trimethyl-4-oxido-4-aza-3-azoniabicyclo[3.2.2]nonane 3-oxide Chemical compound C1CC2CCC1(C)N([O-])[N+](=O)C2(C)C JTSXFTWPBWFCPA-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 2
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 2
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- 238000005481 NMR spectroscopy Methods 0.000 description 2
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- KNSXNCFKSZZHEA-UHFFFAOYSA-N [3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical class C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C KNSXNCFKSZZHEA-UHFFFAOYSA-N 0.000 description 2
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- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 2
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- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 1
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- HPEPIADELDNCED-UHFFFAOYSA-N triethoxysilylmethanol Chemical compound CCO[Si](CO)(OCC)OCC HPEPIADELDNCED-UHFFFAOYSA-N 0.000 description 1
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- FCVNATXRSJMIDT-UHFFFAOYSA-N trihydroxy(phenyl)silane Chemical compound O[Si](O)(O)C1=CC=CC=C1 FCVNATXRSJMIDT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
- C08F290/14—Polymers provided for in subclass C08G
- C08F290/145—Polyamides; Polyesteramides; Polyimides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
一種感光性樹脂組成物,含有:(A)具有聚合性的不飽和鍵的聚醯亞胺前驅物;(B)具有脂肪族環狀骨架的聚合性單體;(C)光聚合起始劑;(D)包含蒽結構的化合物;以及(E)溶劑。A photosensitive resin composition containing: (A) a polyimide precursor with a polymerizable unsaturated bond; (B) a polymerizable monomer with an aliphatic cyclic skeleton; (C) a photopolymerization initiator ; (D) a compound containing an anthracene structure; and (E) a solvent.
Description
本發明是有關於一種感光性樹脂組成物、圖案硬化物的製造方法、硬化物、層間絕緣膜、覆蓋塗層、表面保護膜及電子零件。The present invention relates to a photosensitive resin composition, a method for manufacturing a pattern hardened product, a hardened product, an interlayer insulating film, a cover coating, a surface protective film and electronic parts.
先前,半導體元件的表面保護膜及層間絕緣膜使用的是兼具優異的耐熱性與電特性、機械特性等的聚醯亞胺或聚苯並噁唑。近年來,使用對該些樹脂自身賦予了感光特性的感光性樹脂組成物,若使用該感光性樹脂組成物,則圖案硬化物的製造步驟可簡略化,可縮短繁雜的製造步驟。(例如,參照專利文獻1)Previously, polyimide or polybenzoxazole, which have excellent heat resistance, electrical properties, mechanical properties, etc., were used for surface protection films and interlayer insulating films of semiconductor devices. In recent years, photosensitive resin compositions that impart photosensitive properties to these resins themselves have been used. When this photosensitive resin composition is used, the manufacturing steps of a patterned cured product can be simplified and complicated manufacturing steps can be shortened. (For example, refer to Patent Document 1)
然而,近年來,支援電腦高性能化的電晶體的微細化達到比例定律(scaling law)的極限,為了進一步的高性能化或高速化,將半導體元件三維地積層的積層器件結構受到關注。However, in recent years, the miniaturization of transistors that support high-performance computers has reached the limit of the scaling law. In order to further improve performance or speed, a multilayer device structure in which semiconductor elements are three-dimensionally stacked has attracted attention.
於積層器件結構中,多晶粒扇出晶圓級封裝(Multi-die Fanout Wafer Level Packaging)是在一個封裝中一併密封多個晶粒而製造的封裝,與先前所提出的扇出晶圓級封裝(在一個封裝中密封一個晶粒而製造)相比,可期待低成本化、高性能化,因此備受矚目。In the built-up device structure, multi-die Fanout Wafer Level Packaging is a package manufactured by sealing multiple dies together in one package. It is different from the previously proposed fan-out wafer level packaging. It is expected to have lower cost and higher performance compared to 1-level packaging (manufactured by sealing one die in one package), so it is attracting attention.
於多晶粒扇出晶圓級封裝的製作中,就高性能的晶粒的保護或保護耐熱性低的密封材料而提高良率的觀點而言,強烈要求低溫硬化性(例如,參照專利文獻2)。In the production of multi-die fan-out wafer-level packages, low-temperature curability is strongly required from the viewpoint of improving yield by protecting high-performance die or protecting sealing materials with low heat resistance (see, for example, patent documents 2).
另外,作為樹脂組成物,揭示了包含聚醯亞胺前驅物的樹脂組成物(例如,參照專利文獻3)。 [現有技術文獻] [專利文獻]Moreover, as a resin composition, a resin composition containing a polyimide precursor is disclosed (for example, refer to Patent Document 3). [Prior art documents] [Patent Document]
[專利文獻1]日本專利特開2009-265520號公報 [專利文獻2]國際公開第2008/111470號 [專利文獻3]日本專利特開2016-199662號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2009-265520 [Patent Document 2] International Publication No. 2008/111470 [Patent Document 3] Japanese Patent Application Laid-Open No. 2016-199662
本發明的目的在於提供一種即便為200℃以下的低溫硬化,亦可形成良好的硬化物且顯影後的解析度及圖案化性優異的感光性樹脂組成物、圖案硬化物的製造方法、硬化物、層間絕緣膜、覆蓋塗層、表面保護膜及電子零件。An object of the present invention is to provide a photosensitive resin composition, a method for producing a patterned cured product, and a cured product that can form a good cured product even at low temperature curing of 200° C. or lower and have excellent resolution and patternability after development. , interlayer insulating film, covering coating, surface protective film and electronic parts.
根據本發明,提供以下的感光性樹脂組成物等。 1.一種感光性樹脂組成物,含有: (A)具有聚合性的不飽和鍵的聚醯亞胺前驅物; (B)具有脂肪族環狀骨架的聚合性單體; (C)光聚合起始劑; (D)包含蒽結構的化合物;以及 (E)溶劑。 2.如1所述的感光性樹脂組成物,其中所述(A)成分為具有由下述式(1)所表示的結構單元的聚醯亞胺前驅物。 [化1] (式(1)中,X1 為具有一個以上的芳香族基的四價基,-COOR1 基與-CONH-基相互處於鄰位,-COOR2 基與-CO-基相互處於鄰位。Y1 為二價芳香族基。R1 及R2 分別獨立地為氫原子、由下述式(2)所表示的基、或碳數1~4的脂肪族烴基,且R1 及R2 的至少一者為由所述式(2)所表示的基。) [化2] (式(2)中,R3 ~R5 分別獨立地為氫原子或碳數1~3的脂肪族烴基,m為1~10的整數。) 3.如1或2所述的感光性樹脂組成物,其中所述(B)成分包含聚合性單體,所述聚合性單體具有包含聚合性的不飽和雙鍵的基且具有脂肪族環狀骨架。 4.如3所述的感光性樹脂組成物,其中所述(B)成分為聚合性單體,所述聚合性單體具有兩個以上的包含聚合性的不飽和雙鍵的基且具有脂肪族環狀骨架。 5.如1至3中任一項所述的感光性樹脂組成物,其中所述(B)成分包含由下述式(3)所表示的聚合性單體。 [化3] (式(3)中,R6 及R7 分別獨立地為碳數1~4的脂肪族烴基或由下述式(4)所表示的基。n1為0或1,n2為0~2的整數,n1+n2為1以上。n1個R6 及n2個R7 的至少一個為由下述式(4)所表示的基。) [化4] (式(4)中,R9 ~R11 分別獨立地為氫原子或碳數1~3的脂肪族烴基,l為0~10的整數。) 6.如5所述的感光性樹脂組成物,其中n1+n2為2或3。 7.如1至6中任一項所述的感光性樹脂組成物,其中所述(B)成分包含由下述式(5)所表示的聚合性單體。 [化5] 8.如1至7中任一項所述的感光性樹脂組成物,其中所述(D)成分包含由下述式(31)所表示的化合物。 [化6] (式(31)中,R61 分別獨立地為碳數1~10的烷基、碳數1~10的烷氧基、碳數6~18的芳基、原子數5~18的雜芳基、或鹵素原子,n10為0~8的整數。) 9.如1至7中任一項所述的感光性樹脂組成物,其中所述(D)成分為選自由二丁氧基蒽、二甲氧基蒽、二乙氧基蒽及二乙氧基乙基蒽所組成的群組中的一種以上。 10.如1至9中任一項所述的感光性樹脂組成物,其中更包含(F)熱聚合起始劑。 11.如1至10中任一項所述的感光性樹脂組成物,其用於面板級封裝。 12.一種圖案硬化物的製造方法,包括: 將如1至11中任一項所述的感光性樹脂組成物塗佈於基板上並進行乾燥而形成感光性樹脂膜的步驟; 對所述感光性樹脂膜進行圖案曝光而獲得樹脂膜的步驟; 使用有機溶劑對所述圖案曝光後的樹脂膜進行顯影而獲得圖案樹脂膜的步驟;以及 對所述圖案樹脂膜進行加熱處理的步驟。 13.如12所述的圖案硬化物的製造方法,其中所述加熱處理的溫度為200℃以下。 14.一種硬化物,其為將如1至11中任一項所述的感光性樹脂組成物硬化而成。 15.如14所述的硬化物,其為圖案硬化物。 16.一種層間絕緣膜、覆蓋塗層或表面保護膜,其為使用如14或15所述的硬化物製作而成。 17.一種電子零件,其含有如16所述的層間絕緣膜、覆蓋塗層或表面保護膜。According to the present invention, the following photosensitive resin compositions and the like are provided. 1. A photosensitive resin composition containing: (A) a polyimide precursor having a polymerizable unsaturated bond; (B) a polymerizable monomer having an aliphatic cyclic skeleton; (C) photopolymerization starter; (D) a compound containing an anthracene structure; and (E) a solvent. 2. The photosensitive resin composition according to 1, wherein the component (A) is a polyimide precursor having a structural unit represented by the following formula (1). [Chemical 1] (In formula (1), X 1 is a tetravalent group having one or more aromatic groups, the -COOR 1 group and the -CONH- group are in the ortho position to each other, and the -COOR 2 group and the -CO- group are in the ortho position to each other. Y 1 is a divalent aromatic group. R 1 and R 2 are each independently a hydrogen atom, a group represented by the following formula (2), or an aliphatic hydrocarbon group having 1 to 4 carbon atoms, and R 1 and R 2 At least one of is a group represented by the above formula (2).) [Chemical formula 2] (In formula (2), R 3 to R 5 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and m is an integer of 1 to 10.) 3. The photosensitive resin as described in 1 or 2 A composition in which the component (B) contains a polymerizable monomer having a group containing a polymerizable unsaturated double bond and having an aliphatic cyclic skeleton. 4. The photosensitive resin composition according to 3, wherein the component (B) is a polymerizable monomer having two or more groups containing polymerizable unsaturated double bonds and having a fat Family cyclic skeleton. 5. The photosensitive resin composition according to any one of 1 to 3, wherein the component (B) contains a polymerizable monomer represented by the following formula (3). [Chemical 3] (In formula (3), R 6 and R 7 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the following formula (4). n1 is 0 or 1, and n2 is 0 to 2. Integer, n1+n2 is 1 or more. At least one of n1 R 6 and n2 R 7 is a base represented by the following formula (4).) [Chemical 4] (In formula (4), R 9 to R 11 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and l is an integer of 0 to 10.) 6. The photosensitive resin composition according to 5. , where n1+n2 is 2 or 3. 7. The photosensitive resin composition according to any one of 1 to 6, wherein the component (B) contains a polymerizable monomer represented by the following formula (5). [Chemistry 5] 8. The photosensitive resin composition according to any one of 1 to 7, wherein the component (D) contains a compound represented by the following formula (31). [Chemical 6] (In formula (31), R 61 is each independently an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 18 carbon atoms, or a heteroaryl group having 5 to 18 atoms. , or a halogen atom, n10 is an integer from 0 to 8.) 9. The photosensitive resin composition according to any one of 1 to 7, wherein the component (D) is selected from the group consisting of dibutoxyanthracene, dibutoxyanthracene, One or more types of the group consisting of methoxyanthracene, diethoxyanthracene, and diethoxyethylanthracene. 10. The photosensitive resin composition according to any one of 1 to 9, further containing (F) a thermal polymerization initiator. 11. The photosensitive resin composition according to any one of 1 to 10, which is used for panel-level packaging. 12. A method for manufacturing a patterned hardened product, comprising: applying the photosensitive resin composition according to any one of 1 to 11 on a substrate and drying it to form a photosensitive resin film; The step of subjecting the patterned resin film to pattern exposure to obtain a resin film; the step of developing the patterned resin film using an organic solvent to obtain a patterned resin film; and the step of subjecting the patterned resin film to heat treatment. 13. The method for manufacturing a patterned hardened product according to 12, wherein the temperature of the heat treatment is 200°C or lower. 14. A cured product obtained by curing the photosensitive resin composition according to any one of 1 to 11. 15. The hardened material according to 14, which is a patterned hardened material. 16. An interlayer insulating film, cover coating, or surface protective film produced using the hardened material described in 14 or 15. 17. An electronic component containing the interlayer insulating film, cover coating or surface protective film according to 16.
根據本發明,可提供一種即便為200℃以下的低溫硬化,亦可形成良好的硬化物且顯影後的解析度及圖案化性優異的感光性樹脂組成物、圖案硬化物的製造方法、硬化物、層間絕緣膜、覆蓋塗層、表面保護膜及電子零件。According to the present invention, it is possible to provide a photosensitive resin composition, a method for producing a patterned cured product, and a cured product that can form a good cured product even at low temperature curing of 200° C. or lower and have excellent resolution and patternability after development. , interlayer insulating film, covering coating, surface protective film and electronic parts.
以下,對本發明的感光性樹脂組成物、使用其的圖案硬化物的製造方法、硬化物、層間絕緣膜、覆蓋塗層、表面保護膜及電子零件的實施形態進行詳細說明。再者,本發明並不受以下的實施形態限定。Hereinafter, embodiments of the photosensitive resin composition of the present invention, a method for producing a patterned cured product using the same, a cured product, an interlayer insulating film, an overcoat layer, a surface protective film, and an electronic component will be described in detail. In addition, the present invention is not limited to the following embodiments.
於本說明書中,所謂「A或B」,只要包含A與B的任一者即可,亦可包含兩者。另外,於本說明書中,「步驟」這一用語不僅包含獨立的步驟,即便於無法與其他步驟明確區別的情況下,只要達成該步驟的所期望的作用,則包含於本用語中。 使用「~」所表示的數值範圍是表示包含「~」的前後所記載的數值分別作為最小值及最大值的範圍。另外,於本說明書中,關於組成物中的各成分的含量,於在組成物中存在多種相當於各成分的物質的情況下,只要無特別說明,則是指存在於組成物中的該多種物質的合計量。進而,關於例示材料,只要無特別說明,則可單獨使用,亦可組合使用兩種以上。 本說明書中的所謂「(甲基)丙烯酸基」,是指「丙烯酸基」及「甲基丙烯酸基」。In this specification, "A or B" only needs to include either A or B, and may also include both. In addition, in this specification, the term "step" includes not only independent steps, but even when they cannot be clearly distinguished from other steps, as long as the desired effect of the step is achieved, it is included in this term. The numerical range expressed using "~" means the range including the numerical values described before and after "~" as the minimum value and the maximum value respectively. In addition, in this specification, regarding the content of each component in the composition, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it refers to the multiple substances present in the composition. The total amount of matter. Furthermore, as for the exemplified materials, unless otherwise specified, they may be used individually or in combination of two or more types. The "(meth)acrylic group" in this specification means "acrylic group" and "methacrylic group".
本發明的感光性樹脂組成物含有:(A)具有聚合性的不飽和鍵的聚醯亞胺前驅物(以下,亦稱為「(A)成分」);(B)具有脂肪族環狀骨架的聚合性單體(亦稱為「交聯劑」)(以下,亦稱為「(B)成分」);(C)光聚合起始劑(以下,亦稱為「(C)成分」);(D)包含蒽結構的化合物(以下,亦稱為「(D)成分」);以及(E)溶劑(以下,亦稱為「(E)成分」)。The photosensitive resin composition of the present invention contains: (A) a polyimide precursor having a polymerizable unsaturated bond (hereinafter, also referred to as “(A) component”); (B) having an aliphatic cyclic skeleton polymerizable monomer (also called "crosslinking agent") (hereinafter, also called "(B) component"); (C) photopolymerization initiator (hereinafter, also called "(C) component") ; (D) a compound containing an anthracene structure (hereinafter, also referred to as "(D) component"); and (E) solvent (hereinafter, also referred to as "(E) component").
藉此,即便為200℃以下的低溫硬化,亦可形成良好的硬化物,且顯影後的解析度及圖案化性優異。 另外,作為任意的效果,即便為200℃以下的低溫硬化,亦可形成良好的硬化物,且可形成硬化後的解析度優異的硬化物。Thereby, even if low-temperature curing is performed at 200° C. or lower, a good cured product can be formed, and the resolution and patterning properties after development are excellent. In addition, as an optional effect, a good cured product can be formed even at low temperature curing of 200° C. or lower, and a cured product with excellent resolution after curing can be formed.
本發明的感光性樹脂組成物較佳為負型感光性樹脂組成物。 另外,就h射線曝光時的感光特性的觀點而言,本發明的感光性樹脂組成物較佳為用於面板級封裝(panel level package)(例如,不具有封裝基板,取而代之,藉由自晶片的端子引出配線的再配線層而連接至外部端子的結構的封裝)。本發明的感光性樹脂組成物較佳為面板級封裝用材料、或電子零件用材料。The photosensitive resin composition of the present invention is preferably a negative photosensitive resin composition. In addition, from the viewpoint of photosensitive characteristics during h-ray exposure, the photosensitive resin composition of the present invention is preferably used in a panel level package (for example, it does not have a package substrate, but instead uses a self-made wafer. The terminals are brought out of the rewiring layer of the wiring and connected to the package of the structure of the external terminals). The photosensitive resin composition of the present invention is preferably a material for panel-level packaging or a material for electronic components.
(A)成分並無特別限制,較佳為於圖案化時的光源使用i射線的情況下透射率高、且即便於200℃以下的低溫硬化時亦顯示出高硬化物特性的聚醯亞胺前驅物。The component (A) is not particularly limited, but is preferably a polyimide that has high transmittance when i-rays are used as the light source during patterning and exhibits high cured product characteristics even when cured at a low temperature of 200° C. or lower. precursor.
作為聚合性的不飽和鍵,可列舉碳碳雙鍵等。Examples of polymerizable unsaturated bonds include carbon-carbon double bonds.
(A)成分較佳為具有由下述式(1)所表示的結構單元的聚醯亞胺前驅物。藉此,i射線的透射率高,且即便於200℃以下的低溫硬化時,亦可形成良好的硬化物。 相對於(A)成分的所有構成單元,由式(1)所表示的結構單元的含量較佳為50莫耳%以上,更佳為80莫耳%以上,進而佳為90莫耳%以上。上限並無特別限定,可為100莫耳%。The component (A) is preferably a polyimide precursor having a structural unit represented by the following formula (1). Thereby, the i-ray transmittance is high, and even when curing at a low temperature of 200° C. or lower, a good cured product can be formed. The content of the structural unit represented by formula (1) is preferably 50 mol% or more, more preferably 80 mol% or more, and still more preferably 90 mol% or more, based on all the structural units of component (A). The upper limit is not particularly limited, but may be 100 mol%.
[化7] (式(1)中,X1 為具有一個以上的芳香族基的四價基,-COOR1 基與-CONH-基相互處於鄰位,-COOR2 基與-CO-基相互處於鄰位。Y1 為二價芳香族基。R1 及R2 分別獨立地為氫原子、由下述式(2)所表示的基、或碳數1~4的脂肪族烴基,且R1 及R2 的至少一者為由所述式(2)所表示的基。)[Chemical 7] (In formula (1), X 1 is a tetravalent group having one or more aromatic groups, the -COOR 1 group and the -CONH- group are in the ortho position to each other, and the -COOR 2 group and the -CO- group are in the ortho position to each other. Y 1 is a divalent aromatic group. R 1 and R 2 are each independently a hydrogen atom, a group represented by the following formula (2), or an aliphatic hydrocarbon group having 1 to 4 carbon atoms, and R 1 and R 2 At least one of is a base represented by the formula (2).)
[化8] (式(2)中,R3 ~R5 分別獨立地為氫原子或碳數1~3的脂肪族烴基,m為1~10的整數(較佳為2~5的整數,更佳為2或3)。)[Chemical 8] (In formula (2), R 3 to R 5 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and m is an integer of 1 to 10 (preferably an integer of 2 to 5, more preferably 2 or 3).)
於式(1)的X1 的具有一個以上(較佳為一個~三個,更佳為一個或兩個)的芳香族基的四價基中,芳香族基可為芳香族烴基,亦可為芳香族雜環式基。較佳為芳香族烴基。In the tetravalent group having one or more (preferably one to three, more preferably one or two) aromatic groups of X 1 in the formula (1), the aromatic group may be an aromatic hydrocarbon group or an aromatic hydrocarbon group. It is an aromatic heterocyclic group. An aromatic hydrocarbon group is preferred.
作為式(1)的X1 的芳香族烴基,可列舉:由苯環形成的二價~四價(二價、三價或四價)的基、由萘形成的二價~四價的基、由苝形成的二價~四價的基等。Examples of the aromatic hydrocarbon group of , divalent to tetravalent bases formed from perylene, etc.
作為式(1)的X1 的具有一個以上的芳香族基的四價基,例如可列舉以下的式(6)的四價基,但並不限定於該些。 [化9] (式(6)中,X及Y分別獨立地表示不與各自所鍵結的苯環共軛的二價基或單鍵。Z為醚基(-O-)或硫醚基(-S-)(較佳為-O-)。)Examples of the tetravalent group having one or more aromatic groups of X 1 in the formula (1) include, but are not limited to, the tetravalent group of the following formula (6). [Chemical 9] (In formula (6), X and Y each independently represent a divalent group or a single bond that is not conjugated to the benzene ring to which they are bonded. Z is an ether group (-O-) or a thioether group (-S- ) (Preferably -O-).)
式(6)中,X及Y的不與各自所鍵結的苯環共軛的二價基較佳為-O-、-S-、亞甲基、雙(三氟甲基)亞甲基、或二氟亞甲基,更佳為-O-。In formula (6), the divalent groups of X and Y that are not conjugated with the benzene ring to which they are bonded are preferably -O-, -S-, methylene, and bis(trifluoromethyl)methylene. , or difluoromethylene, more preferably -O-.
式(1)的Y1 的二價芳香族基可為二價芳香族烴基,亦可為二價芳香族雜環式基。較佳為二價芳香族烴基。The divalent aromatic group of Y 1 in Formula (1) may be a divalent aromatic hydrocarbon group or a divalent aromatic heterocyclic group. Preferred is a divalent aromatic hydrocarbon group.
作為式(1)的Y1 的二價芳香族烴基,例如可列舉以下的式(7)的基,但並不限定於此。 [化10] (式(7)中,R12 ~R19 分別獨立地為氫原子、一價脂肪族烴基或具有鹵素原子的一價有機基。)Examples of the divalent aromatic hydrocarbon group of Y 1 in the formula (1) include the group of the following formula (7), but are not limited thereto. [Chemical 10] (In formula (7), R 12 to R 19 are each independently a hydrogen atom, a monovalent aliphatic hydrocarbon group, or a monovalent organic group having a halogen atom.)
作為式(7)的R12 ~R19 的一價脂肪族烴基(較佳為碳數1~10,更佳為碳數1~6),可列舉甲基等。例如,可為R12 及R15 ~R19 為氫原子,R13 及R14 為一價脂肪族烴基。Examples of the monovalent aliphatic hydrocarbon group (preferably having 1 to 10 carbon atoms, and more preferably having 1 to 6 carbon atoms) of R 12 to R 19 in the formula (7) include methyl and the like. For example, R 12 and R 15 to R 19 may be hydrogen atoms, and R 13 and R 14 may be monovalent aliphatic hydrocarbon groups.
式(7)的R12 ~R19 的具有鹵素原子(較佳為氟原子)的一價有機基較佳為具有鹵素原子的一價脂肪族烴基(較佳為碳數1~10,更佳為碳數1~6),可列舉三氟甲基等。The monovalent organic group having a halogen atom (preferably a fluorine atom) of R 12 to R 19 in the formula (7) is preferably a monovalent aliphatic hydrocarbon group having a halogen atom (preferably having a carbon number of 1 to 10, more preferably (carbon number 1 to 6), trifluoromethyl, etc. can be mentioned.
作為式(1)的R1 及R2 的碳數1~4(較佳為1或2)的脂肪族烴基,可列舉:甲基、乙基、正丙基、2-丙基、正丁基等。Examples of aliphatic hydrocarbon groups having 1 to 4 carbon atoms (preferably 1 or 2) for R 1 and R 2 in formula (1) include: methyl, ethyl, n-propyl, 2-propyl, n-butyl Key et al.
式(1)的R1 及R2 的至少一者為由式(2)所表示的基,較佳為R1 及R2 兩者均為由式(2)所表示的基。At least one of R 1 and R 2 in formula (1) is a group represented by formula (2), and preferably both R 1 and R 2 are groups represented by formula (2).
作為式(2)的R3 ~R5 的碳數1~3(較佳為1或2)的脂肪族烴基,可列舉:甲基、乙基、正丙基、2-丙基等。較佳為甲基。Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms (preferably 1 or 2) for R 3 to R 5 in the formula (2) include methyl, ethyl, n-propyl, 2-propyl, and the like. Preferred is methyl.
具有由式(1)所表示的結構單元的聚醯亞胺前驅物例如可藉由如下方式來獲得:使由下述式(8)所表示的四羧酸二酐與由下述式(9)所表示的二胺基化合物於N-甲基-2-吡咯啶酮等有機溶劑中進行反應而獲得聚醯胺酸,添加由下述式(10)所表示的化合物,並於有機溶劑中進行反應而局部地導入酯基。 由式(8)所表示的四羧酸二酐及由式(9)所表示的二胺基化合物可單獨使用一種,亦可組合兩種以上。A polyimide precursor having a structural unit represented by formula (1) can be obtained, for example, by mixing tetracarboxylic dianhydride represented by the following formula (8) and the following formula (9) ) is reacted in an organic solvent such as N-methyl-2-pyrrolidinone to obtain polyamide, and a compound represented by the following formula (10) is added, and in the organic solvent The reaction proceeds to introduce ester groups locally. The tetracarboxylic dianhydride represented by Formula (8) and the diamine-based compound represented by Formula (9) may be used individually by one type, or two or more types may be combined.
[化11] (式(8)中,X1 為與式(1)的X1 相對應的基。)[Chemical 11] (In formula (8), X 1 is a base corresponding to X 1 in formula (1).)
[化12] (式(9)中,Y1 如式(1)中所定義般。)[Chemical 12] (In formula (9), Y 1 is as defined in formula (1).)
[化13] (式(10)中,R為由所述式(2)所表示的基。)[Chemical 13] (In Formula (10), R is a group represented by Formula (2).)
(A)成分亦可具有由式(1)所表示的結構單元以外的結構單元。 作為由式(1)所表示的結構單元以外的結構單元,可列舉由式(11)所表示的結構單元等。 [化14] (式(11)中,X2 為具有一個以上的芳香族基的四價基,-COOR51 基與-CONH-基相互處於鄰位,-COOR52 基與-CO-基相互處於鄰位。Y2 為二價芳香族基。R51 及R52 分別獨立地為氫原子或碳數1~4的脂肪族烴基。)The component (A) may have a structural unit other than the structural unit represented by formula (1). Examples of structural units other than the structural unit represented by Formula (1) include the structural unit represented by Formula (11) and the like. [Chemical 14] (In formula (11), X 2 is a tetravalent group having one or more aromatic groups, the -COOR 51 group and the -CONH- group are in the ortho position to each other, and the -COOR 52 group and the -CO- group are in the ortho position to each other. Y 2 is a divalent aromatic group. R 51 and R 52 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 4 carbon atoms.)
式(11)的X2 的具有一個以上的芳香族基的四價基可列舉與式(1)的X1 的具有一個以上的芳香族基的四價基相同者。 式(11)的Y2 的二價芳香族基可列舉與式(1)的Y1 的二價芳香族基相同者。 式(11)的R51 及R52 的碳數1~4的脂肪族烴基可列舉與R1 及R2 的碳數1~4的脂肪族烴基相同者。Examples of the tetravalent group having one or more aromatic groups in X 2 of Formula (11) are the same as the tetravalent group having one or more aromatic groups in X 1 in Formula (1). Examples of the divalent aromatic group of Y 2 in the formula (11) include the same divalent aromatic group as the divalent aromatic group of Y 1 in the formula (1). Examples of the aliphatic hydrocarbon groups having 1 to 4 carbon atoms in R 51 and R 52 in the formula (11) are the same as the aliphatic hydrocarbon groups having 1 to 4 carbon atoms in R 1 and R 2 .
由式(1)所表示的結構單元以外的結構單元可單獨使用一種,亦可組合兩種以上。The structural unit other than the structural unit represented by Formula (1) may be used individually by 1 type, or in combination of 2 or more types.
相對於(A)成分的所有構成單元,由式(1)所表示的結構單元以外的結構單元的含量較佳為未滿50莫耳%。The content of structural units other than the structural units represented by formula (1) is preferably less than 50 mol % with respect to all the structural units of component (A).
於(A)成分中,相對於所有羧基及所有羧基酯,經式(2)所表示的基酯化的羧基的比例較佳為50莫耳%以上,更佳為60莫耳%~100莫耳%,進而佳為70莫耳%~90莫耳%。In component (A), the proportion of carboxyl groups esterified with the group represented by formula (2) relative to all carboxyl groups and all carboxyl esters is preferably 50 mol% or more, more preferably 60 mol% to 100 mol%. %, preferably 70 mol% to 90 mol%.
(A)成分的分子量並無特別限制,以數量平均分子量計,較佳為10,000~200,000。 數量平均分子量例如可利用凝膠滲透層析法來測定,可藉由使用標準聚苯乙烯校準曲線進行換算來求出。The molecular weight of component (A) is not particularly limited, but is preferably 10,000 to 200,000 in terms of number average molecular weight. The number average molecular weight can be measured, for example, by gel permeation chromatography, and can be determined by conversion using a standard polystyrene calibration curve.
本發明的感光性樹脂組成物包含(B)具有脂肪族環狀骨架(碳數較佳為4~15,更佳為5~12)的聚合性單體。藉此,能夠對可形成的硬化物賦予疏水性,從而可抑制高溫多濕條件下的硬化物與基板間的接著性降低。The photosensitive resin composition of the present invention contains (B) a polymerizable monomer having an aliphatic cyclic skeleton (preferably 4 to 15 carbon atoms, more preferably 5 to 12 carbon atoms). This can impart hydrophobicity to the cured product that can be formed, thereby suppressing a decrease in the adhesiveness between the cured product and the substrate under high-temperature and humid conditions.
(B)成分較佳為包含具有(較佳為兩個以上的)包含聚合性的不飽和雙鍵的基(因可藉由光聚合起始劑進行聚合,故較佳為(甲基)丙烯酸基)且具有脂肪族環狀骨架的聚合性單體,為了提高交聯密度及光感度、抑制顯影後的圖案膨潤,(B)成分較佳為具有兩個~三個的包含聚合性的不飽和雙鍵的基。(B) Component preferably contains a group having (preferably two or more) polymerizable unsaturated double bonds (since it can be polymerized by a photopolymerization initiator, (meth)acrylic acid is preferred) (B) is a polymerizable monomer with an aliphatic cyclic skeleton. In order to improve the cross-linking density and photosensitivity and suppress pattern swelling after development, component (B) is preferably a polymerizable monomer containing two to three polymerizable monomers. A saturated double bond base.
(B)成分較佳為包含由下述式(3)所表示的聚合性單體。 [化15] (式(3)中,R6 及R7 分別獨立地為碳數1~4的脂肪族烴基或由下述式(4)所表示的基。n1為0或1,n2為0~2的整數,n1+n2為1以上(較佳為2或3)。n1個R6 及n2個R7 的至少一個(較佳為兩個或三個)為由下述式(4)所表示的基。)The component (B) preferably contains a polymerizable monomer represented by the following formula (3). [Chemical 15] (In formula (3), R 6 and R 7 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the following formula (4). n1 is 0 or 1, and n2 is 0 to 2. Integer, n1+n2 is 1 or more (preferably 2 or 3). At least one (preferably two or three) of n1 R 6 and n2 R 7 is represented by the following formula (4) base.)
於R7 為兩個的情況下,兩個R7 可相同亦可不同。In the case where there are two R 7 s, the two R 7 s may be the same or different.
[化16] (式(4)中,R9 ~R11 分別獨立地為氫原子或碳數1~3的脂肪族烴基,l為0~10的整數(較佳為0、1或2)。)[Chemical 16] (In formula (4), R 9 to R 11 are each independently a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and l is an integer of 0 to 10 (preferably 0, 1, or 2).)
(B)成分更佳為包含由下述式(5)所表示的聚合性單體。 [化17] The component (B) more preferably contains a polymerizable monomer represented by the following formula (5). [Chemical 17]
另外,作為(B)成分,例如亦可使用以下的聚合性單體。In addition, as the component (B), for example, the following polymerizable monomers can also be used.
[化18] 式(12)中,R21 ~R24 分別獨立地為碳數1~4的脂肪族烴基或由所述式(4)所表示的基。n3為1~3的整數(較佳為2或3)。n4為1~3的整數(較佳為2或3)。n5為0或1,n6為0或1。n5+n6為1以上(較佳為2)。[Chemical 18] In formula (12), R 21 to R 24 are each independently an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a group represented by the above formula (4). n3 is an integer from 1 to 3 (preferably 2 or 3). n4 is an integer from 1 to 3 (preferably 2 or 3). n5 is 0 or 1, n6 is 0 or 1. n5+n6 is 1 or more (preferably 2).
於R21 存在兩個以上的情況下,兩個以上的R21 可相同亦可不同。 於R22 存在兩個以上的情況下,兩個以上的R22 可相同亦可不同。When there are two or more R 21s , the two or more R 21s may be the same or different. When there are two or more R 22s , the two or more R 22s may be the same or different.
n3個R21 的至少一個(較佳為兩個或三個)為由所述式(4)所表示的基。 n4個R22 的至少一個(較佳為兩個或三個)為由所述式(4)所表示的基。 n5個R23 及n6個R24 的至少一個(較佳為兩個)為由所述式(4)所表示的基。At least one (preferably two or three) of n3 R 21s is a group represented by the formula (4). At least one (preferably two or three) of n4 R 22s is a group represented by the formula (4). At least one (preferably two) of n5 R 23 and n6 R 24 is a group represented by the above formula (4).
作為式(3)的R6 及R7 以及式(12)的R21 ~R24 的碳數1~4的脂肪族烴基,可列舉與式(1)的R1 及R2 的碳數1~4的脂肪族烴基相同者。Examples of the aliphatic hydrocarbon group having 1 to 4 carbon atoms in R 6 and R 7 in the formula (3) and R 21 to R 24 in the formula (12) include those having a carbon number of 1 in R 1 and R 2 in the formula (1). ~4 aliphatic hydrocarbon groups are the same.
作為式(4)的R9 ~R11 的碳數1~3的脂肪族烴基,可列舉與式(2)的R3 ~R5 的碳數1~3的脂肪族烴基相同者。Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms in R 9 to R 11 in the formula (4) include the same aliphatic hydrocarbon groups having 1 to 3 carbon atoms in R 3 to R 5 in the formula (2).
(B)成分可單獨使用一種,亦可組合兩種以上。(B) Component may be used individually by 1 type, or in combination of 2 or more types.
相對於(A)成分100質量份,(B)成分的含量較佳為1質量份~50質量份。就提高硬化物的疏水性的觀點而言,更佳為3質量份~50質量份,進而佳為5質量份~35質量份。 於為所述範圍內的情況下,容易獲得實用性浮雕圖案(relief pattern),容易抑制未曝光部的顯影後殘渣。The content of component (B) is preferably 1 to 50 parts by mass relative to 100 parts by mass of component (A). From the viewpoint of improving the hydrophobicity of the hardened material, the content is more preferably 3 to 50 parts by mass, and even more preferably 5 to 35 parts by mass. When it is within the above range, it is easy to obtain a practical relief pattern, and it is easy to suppress post-development residues in unexposed areas.
作為(C)成分,例如可較佳地列舉:二苯甲酮、鄰苯甲醯基苯甲酸甲酯、4-苯甲醯基-4'-甲基二苯基酮、二芐基酮、茀酮等二苯甲酮衍生物, 2,2'-二乙氧基苯乙酮、2-羥基-2-甲基苯丙酮、1-羥基環己基苯基酮等苯乙酮衍生物, 噻噸酮、2-甲基噻噸酮、2-異丙基噻噸酮、二乙基噻噸酮等噻噸酮衍生物, 芐基、芐基二甲基縮酮、芐基-β-甲氧基乙基縮醛等芐基衍生物, 安息香、安息香甲醚等安息香衍生物,及 1-苯基-1,2-丁二酮-2-(O-甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-甲氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟、1-苯基-1,2-丙二酮-2-(O-苯甲醯基)肟、1,3-二苯基丙三酮-2-(O-乙氧基羰基)肟、1-苯基-3-乙氧基丙三酮-2-(O-苯甲醯基)肟、乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯基肟)、由下述式所表示的化合物等肟酯類等,但並不限定於該些。 [化19] Preferred examples of the component (C) include benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenylketone, and dibenzylketone. Benzophenone derivatives such as quinone, 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexylphenylketone and other acetophenone derivatives, thiophene Thioxanthone derivatives such as xanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethylthioxanthone, benzyl, benzyldimethyl ketal, benzyl-β-methyl Benzyl derivatives such as oxyethyl acetal, benzoin derivatives such as benzoin and benzoin methyl ether, and 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl) oxime, 1- Phenyl-1,2-propanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime, 1- Phenyl-1,2-propanedione-2-(O-benzyl)oxime, 1,3-diphenylglycerol-2-(O-ethoxycarbonyl)oxime, 1-phenyl -3-Ethoxyglycerol-2-(O-benzoyl)oxime, ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole -3-yl]-,1-(O-acetyl oxime), oxime esters such as compounds represented by the following formula, etc., but are not limited to these. [Chemical 19]
尤其就光感度的方面而言,較佳為肟酯類。Especially in terms of light sensitivity, oxime esters are preferred.
(C)成分較佳為含有(C1)由下述式(15)所表示的化合物(以下,亦稱為「(C1)成分」)。 (C1)成分較佳為相對於光化射線的感度高於後述的(C2)成分,且較佳為高感度的感光劑。(C) component preferably contains (C1) a compound represented by the following formula (15) (hereinafter, also referred to as "(C1) component"). The component (C1) is preferably a photosensitive agent that has a higher sensitivity to actinic rays than the component (C2) described below, and is highly sensitive.
[化20] 式(15)中,R11A 為碳數1~12的烷基,a1為0~5的整數。R12A 為氫原子或碳數1~12的烷基。R13A 及R14A 分別獨立地表示氫原子、碳數1~12(較佳為碳數1~4)的烷基、苯基或甲苯基。於a1為2以上的整數的情況下,R11A 分別可相同亦可不同。[Chemistry 20] In formula (15), R 11A is an alkyl group having 1 to 12 carbon atoms, and a1 is an integer of 0 to 5. R 12A is a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. R 13A and R 14A each independently represent a hydrogen atom, an alkyl group having 1 to 12 carbon atoms (preferably 1 to 4 carbon atoms), a phenyl group or a tolyl group. When a1 is an integer of 2 or more, R 11A may be the same or different.
R11A 較佳為碳數1~4的烷基,更佳為甲基。a1較佳為1。R12A 較佳為碳數1~4的烷基,更佳為乙基。R13A 及R14A 較佳為分別獨立地為碳數1~4的烷基,更佳為甲基。R 11A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group. a1 is preferably 1. R 12A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably an ethyl group. R 13A and R 14A are preferably each independently an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group.
作為由式(15)所表示的化合物,例如可列舉由下述式(15A)所表示的化合物,可作為日本巴斯夫(BASF Japan)股份有限公司製造的「豔佳固(IRGACURE)OXE 02」來獲取。 [化21] Examples of the compound represented by formula (15) include a compound represented by the following formula (15A), which is available as "IRGACURE OXE 02" manufactured by BASF Japan Co., Ltd. Get. [Chemistry 21]
另外,(C)成分較佳為含有(C2)由下述式(16)所表示的化合物(以下,亦稱為「(C2)成分」)。 (C2)成分較佳為相對於光化射線的感度低於(C1)成分,且較佳為標準感度的感光劑。In addition, component (C) preferably contains (C2) a compound represented by the following formula (16) (hereinafter, also referred to as "component (C2)"). The component (C2) is preferably a photosensitizer whose sensitivity to actinic rays is lower than that of the component (C1), and is preferably a standard sensitivity.
[化22] 式(16)中,R21A 為碳數1~12的烷基,R22A 及R23A 分別獨立地為氫原子、碳數1~12的烷基(較佳為碳數1~4)、碳數1~12的烷氧基(較佳為碳數1~4)、碳數4~10的環烷基、苯基或甲苯基,c1為0~5的整數。於c1為2以上的整數的情況下,R21A 分別可相同亦可不同。[Chemistry 22] In formula (16), R 21A is an alkyl group having 1 to 12 carbon atoms, and R 22A and R 23A are each independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms (preferably, alkyl group having 1 to 4 carbon atoms), and Alkoxy group with 1 to 12 carbon atoms (preferably with 1 to 4 carbon atoms), cycloalkyl group with 4 to 10 carbon atoms, phenyl or tolyl group, c1 is an integer of 0 to 5. When c1 is an integer of 2 or more, R 21A may be the same or different.
c1較佳為0。R22A 較佳為碳數1~4的烷基,更佳為甲基。R23A 較佳為碳數1~12的烷氧基,更佳為碳數1~4的烷氧基,進而佳為甲氧基或乙氧基。c1 is preferably 0. R 22A is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group. R 23A is preferably an alkoxy group having 1 to 12 carbon atoms, more preferably an alkoxy group having 1 to 4 carbon atoms, and even more preferably a methoxy group or an ethoxy group.
作為由式(16)所表示的化合物,例如可列舉由下述式(16A)所表示的化合物,可作為拉姆森(Lambson)公司製造的「G-1820(PDO)」來獲取。 [化23] Examples of the compound represented by formula (16) include a compound represented by the following formula (16A), which is available as "G-1820 (PDO)" manufactured by Lambson Corporation. [Chemistry 23]
(C)成分可單獨使用一種,亦可組合兩種以上。(C) Component may be used individually by 1 type, or in combination of 2 or more types.
(C)成分較佳為包含選自由(C1)成分及(C2)成分所組成的群組中的一種以上。 另外,(C)成分較佳為包含(C1)成分及(C2)成分。(C) component preferably contains one or more types selected from the group consisting of (C1) component and (C2) component. Moreover, it is preferable that (C) component contains (C1) component and (C2) component.
相對於(A)成分100質量份,(C)成分的含量較佳為0.1質量份~20質量份,更佳為0.1質量份~15質量份,進而佳為0.2質量份~10質量份。 於為所述範圍內的情況下,光交聯於膜厚方向上容易變得均勻,容易獲得實用性浮雕圖案。The content of component (C) is preferably 0.1 to 20 parts by mass relative to 100 parts by mass of component (A), more preferably 0.1 to 15 parts by mass, and still more preferably 0.2 to 10 parts by mass. When it is within the said range, photo-crosslinking becomes easy to become uniform in the film thickness direction, and it becomes easy to obtain a practical relief pattern.
於含有(C1)成分的情況下,相對於(A)成分100質量份,(C1)成分的含量通常為0.05質量份~5.0質量份,較佳為0.07質量份~2.5質量份,更佳為0.09質量份~1.0質量份。When component (C1) is contained, the content of component (C1) is usually 0.05 to 5.0 parts by mass, preferably 0.07 to 2.5 parts by mass, and more preferably 100 parts by mass of component (A). 0.09 parts by mass to 1.0 parts by mass.
於含有(C2)成分的情況下,相對於(A)成分100質量份,(C2)成分的含量通常為0.5質量份~15.0質量份,較佳為1.0質量份~13.0質量份。When component (C2) is contained, the content of component (C2) is usually 0.5 to 15.0 parts by mass, preferably 1.0 to 13.0 parts by mass relative to 100 parts by mass of component (A).
於含有(C1)成分及(C2)成分的情況下,較佳為(C1)成分的含量相對於(A)成分100質量份而為0.05質量份~5.0質量份,且(C2)成分的含量相對於(A)成分100質量份而為0.5質量份~15.0質量份。When component (C1) and component (C2) are contained, it is preferable that the content of component (C1) is 0.05 to 5.0 parts by mass with respect to 100 parts by mass of component (A), and the content of component (C2) is preferably It is 0.5 to 15.0 parts by mass relative to 100 parts by mass of component (A).
於含有(C1)成分及(C2)成分的情況下,(C1)成分與(C2)成分的含量的質量比較佳為1:30~1:70,更佳為1:35~1:65。When the component (C1) and the component (C2) are contained, the mass ratio of the contents of the component (C1) and the component (C2) is preferably 1:30 to 1:70, more preferably 1:35 to 1:65.
就兼顧感度與解析度的觀點而言,(D)成分較佳為包含由下述式(31)所表示的化合物。 [化24] (式(31)中,R61 分別獨立地為碳數1~10的烷基、碳數1~10的烷氧基、碳數6~18的芳基、原子數5~18的雜芳基、或鹵素原子(較佳為氟原子),n10為0~8的整數(較佳為1~4的整數,更佳為2、3或4)。)From the viewpoint of balancing sensitivity and resolution, component (D) preferably contains a compound represented by the following formula (31). [Chemistry 24] (In formula (31), R 61 is each independently an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aryl group having 6 to 18 carbon atoms, or a heteroaryl group having 5 to 18 atoms. , or a halogen atom (preferably a fluorine atom), n10 is an integer from 0 to 8 (preferably an integer from 1 to 4, more preferably 2, 3 or 4).
作為碳數1~10(較佳為1~6,更佳為2~5)的烷基,可列舉甲基、乙基、第三丁基、正丁基等。 作為碳數1~10(較佳為1~6,更佳為2~5)的烷氧基,可列舉丁氧基(例如正丁氧基)、甲氧基、乙氧基等。Examples of the alkyl group having 1 to 10 carbon atoms (preferably 1 to 6, more preferably 2 to 5) include methyl, ethyl, tert-butyl, n-butyl, and the like. Examples of the alkoxy group having 1 to 10 carbon atoms (preferably 1 to 6, more preferably 2 to 5) include a butoxy group (for example, n-butoxy group), a methoxy group, an ethoxy group, and the like.
作為碳數6~18(較佳為6~12,更佳為6~10)的芳基,可列舉苯基、萘基等。 作為原子數5~18(較佳為5~12,更佳為5~10)的雜芳基,可列舉吡啶基、喹啉基、咔唑基等。Examples of the aryl group having 6 to 18 carbon atoms (preferably 6 to 12, more preferably 6 to 10) include phenyl and naphthyl groups. Examples of the heteroaryl group having 5 to 18 atoms (preferably 5 to 12, more preferably 5 to 10) include pyridyl, quinolyl, carbazolyl, and the like.
另外,就兼顧對感光性樹脂組成物的溶解性與感光特性的觀點而言,(D)成分較佳為可具有取代基的二烷氧基蒽(例如9,10二烷氧基蒽),較佳為選自由二丁氧基蒽(例如9,10二丁氧基蒽)、二甲氧基蒽(例如9,10-二甲氧基蒽)、二乙氧基蒽(例如9,10-二乙氧基蒽)、及二乙氧基乙基蒽(例如9,10-二甲氧基-2乙基蒽)所組成的群組中的一種以上。 作為取代基,可列舉甲基、乙基、第三丁基、正丁基等。In addition, from the viewpoint of balancing solubility in the photosensitive resin composition and photosensitive characteristics, component (D) is preferably dialkoxyanthracene which may have a substituent (for example, 9,10 dialkoxyanthracene), Preferably, it is selected from the group consisting of dibutoxyanthracene (for example, 9,10 dibutoxyanthracene), dimethoxyanthracene (for example, 9,10-dimethoxyanthracene), diethoxyanthracene (for example, 9,10 -diethoxyanthracene), and diethoxyethylanthracene (such as 9,10-dimethoxy-2ethylanthracene). Examples of the substituent include methyl, ethyl, tert-butyl, n-butyl, and the like.
(D)成分可單獨使用一種,亦可組合兩種以上。(D) Component may be used individually by 1 type, or in combination of 2 or more types.
相對於(A)成分100質量份,(D)成分的含量較佳為0.1質量份~20質量份,更佳為0.2質量份~10質量份,進而佳為0.3質量份~5質量份。 於所述範圍內的情況下,可兼顧對感光性樹脂組成物的溶解性與感光特性的提高。The content of component (D) is preferably 0.1 to 20 parts by mass, more preferably 0.2 to 10 parts by mass, and still more preferably 0.3 to 5 parts by mass relative to 100 parts by mass of component (A). Within the above range, both the solubility of the photosensitive resin composition and the improvement of the photosensitive characteristics can be achieved.
本發明的感光性樹脂組成物包含(E)溶劑。 作為(E)成分,可列舉N-甲基-2-吡咯啶酮、γ-丁內酯、乳酸乙酯、丙二醇單甲醚乙酸酯、乙酸苄酯、乙酸正丁酯、丙酸乙氧基乙酯、3-甲基甲氧基丙酸酯、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、六甲基磷醯胺、四亞甲基碸、環己酮、環戊酮、二乙基酮、二異丁基酮、甲基戊基酮、N-二甲基嗎啉等,通常只要可充分溶解其他成分,則並無特別限制。 其中,就各成分的溶解性與感光性樹脂膜形成時的塗佈性優異的觀點而言,較佳為使用N-甲基-2-吡咯啶酮、γ-丁內酯、乳酸乙酯、丙二醇單甲醚乙酸酯、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺。The photosensitive resin composition of the present invention contains (E) solvent. Examples of the component (E) include N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, and ethyl propionate. Ethyl ester, 3-methylmethoxypropionate, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsairinoxide, hexamethylphosphoramide, Tetramethylene terephthalate, cyclohexanone, cyclopentanone, diethyl ketone, diisobutyl ketone, methyl amyl ketone, N-dimethylmorpholine, etc., usually as long as other ingredients can be fully dissolved, No special restrictions. Among them, from the viewpoint of excellent solubility of each component and coating properties when forming a photosensitive resin film, N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, Propylene glycol monomethyl ether acetate, N,N-dimethylformamide, N,N-dimethylacetamide.
另外,作為(E)成分,亦可使用由下述式(21)所表示的化合物。 [化25] (式中,R41 ~R43 分別獨立地為碳數1~10的烷基。)In addition, as the component (E), a compound represented by the following formula (21) can also be used. [Chemical 25] (In the formula, R 41 to R 43 are each independently an alkyl group having 1 to 10 carbon atoms.)
作為式(21)中的R41 ~R43 的碳數1~10(較佳為1~3,更佳為1或3)的烷基,可列舉:甲基、乙基、正丙基、異丙基、正丁基、第三丁基、戊基、己基、庚基、辛基等。 由式(21)所表示的化合物較佳為3-甲氧基-N,N-二甲基丙醯胺(例如,商品名「KJCMPA-100」(KJ化學品(KJ Chemicals)股份有限公司製造))。Examples of the alkyl group having 1 to 10 carbon atoms (preferably 1 to 3, more preferably 1 or 3) for R 41 to R 43 in the formula (21) include: methyl, ethyl, n-propyl, Isopropyl, n-butyl, tert-butyl, pentyl, hexyl, heptyl, octyl, etc. The compound represented by formula (21) is preferably 3-methoxy-N,N-dimethylpropylamide (for example, trade name "KJCMPA-100" (manufactured by KJ Chemicals Co., Ltd. )).
(E)成分可單獨使用一種,亦可組合兩種以上。 (E)成分的含量並無特別限定,一般而言,相對於(A)成分100質量份而為50質量份~1000質量份。(E) Component may be used individually by 1 type, or in combination of 2 or more types. The content of component (E) is not particularly limited, but generally it is 50 parts by mass to 1,000 parts by mass relative to 100 parts by mass of component (A).
就促進聚合反應的觀點而言,本發明的感光性樹脂組成物可更包含(F)熱聚合起始劑(以下,亦稱為「(F)成分」)。 作為(F)成分,較佳為如下化合物:於在成膜時用以去除溶劑的加熱(乾燥)中不分解,藉由硬化時的加熱而分解並產生自由基,從而促進(B)成分彼此、或(A)成分及(B)成分的聚合反應。 (F)成分較佳為分解點為110℃以上、200℃以下的化合物,就於更低的溫度下促進聚合反應的觀點而言,更佳為分解點為110℃以上、175℃以下的化合物。From the viewpoint of accelerating the polymerization reaction, the photosensitive resin composition of the present invention may further contain (F) a thermal polymerization initiator (hereinafter, also referred to as "(F) component"). The component (F) is preferably a compound that does not decompose during heating (drying) to remove the solvent during film formation, but decomposes by heating during hardening to generate free radicals, thereby promoting the interaction between the components (B). , or the polymerization reaction of component (A) and component (B). The component (F) is preferably a compound with a decomposition point of 110°C or more and 200°C or less. From the viewpoint of promoting the polymerization reaction at a lower temperature, a compound with a decomposition point of 110°C or more and 175°C or less is more preferred. .
作為具體例,可列舉:過氧化甲乙酮等過氧化酮;過氧化1,1-二(第三己基過氧化)-3,3,5-三甲基環己烷、1,1-二(第三己基過氧化)環己烷、1,1-二(第三丁基過氧化)環己烷等的過氧化縮酮;1,1,3,3-四甲基丁基過氧化氫、枯烯過氧化氫、對甲烷過氧化氫等過氧化氫;二枯基過氧化物、二-第三丁基過氧化物等二烷基過氧化物;二月桂醯基過氧化物、二苯甲醯基過氧化物等二醯基過氧化物;二(4-第三丁基環己基)過氧化二碳酸酯、二(2-乙基己基)過氧化二碳酸酯等過氧化二碳酸酯;第三丁基過氧化-2-乙基己酸酯、第三己基過氧化異丙基單碳酸酯、第三丁基過氧化苯甲酸酯、1,1,3,3-四甲基丁基過氧化-2-乙基己酸酯等過氧化酯,雙(1-苯基-1-甲基乙基)過氧化物等。作為市售品,可列舉商品名「過枯基(Percumyl)D」、「過枯基(Percumyl)P」、「過枯基(Percumyl)H」(以上為日油股份有限公司製造)等。Specific examples include peroxyketones such as methyl ethyl ketone peroxide; 1,1-di(tert-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-di(tert-hexylperoxy)- Peroxyketals such as trihexyl peroxide) cyclohexane, 1,1-di(tert-butyl peroxide) cyclohexane; 1,1,3,3-tetramethylbutyl hydroperoxide, cumene Hydroperoxides such as alkenyl hydroperoxide and p-methane hydroperoxide; dialkyl peroxides such as dicumyl peroxide and di-tert-butyl peroxide; dilauryl peroxide, benzyl peroxide, etc. Dihydryl peroxides such as hydroxyl peroxide; peroxydicarbonates such as bis(4-tert-butylcyclohexyl)peroxydicarbonate and bis(2-ethylhexyl)peroxydicarbonate; 3rd Butyl Peroxy-2-Ethylhexanoate, 3rd Hexyl Peroxyisopropyl Monocarbonate, 3rd Butyl Peroxybenzoate, 1,1,3,3-Tetramethylbutyl Peroxyesters such as peroxy-2-ethylhexanoate, bis(1-phenyl-1-methylethyl) peroxide, etc. Examples of commercially available products include the trade names "Percumyl D", "Percumyl P", "Percumyl H" (the above are manufactured by NOF Co., Ltd.), and the like.
於含有(F)成分的情況下,相對於(A)成分100質量份,(F)成分的含量較佳為0.1質量份~20質量份,為了確保良好的耐助熔劑性,更佳為0.2質量份~20質量份,就抑制因乾燥時的分解而導致的溶解性降低的觀點而言,進而佳為0.3質量份~10質量份。When component (F) is contained, the content of component (F) is preferably 0.1 to 20 parts by mass based on 100 parts by mass of component (A). In order to ensure good flux resistance, the content of component (F) is more preferably 0.2. Parts by mass to 20 parts by mass, and more preferably 0.3 parts by mass to 10 parts by mass from the viewpoint of suppressing a decrease in solubility due to decomposition during drying.
本發明的感光性樹脂組成物可更含有偶合劑(接著助劑)、界面活性劑或調平劑、防鏽劑、(B)成分以外的交聯劑、增感劑及聚合禁止劑等。The photosensitive resin composition of the present invention may further contain a coupling agent (adhesion aid), a surfactant or a leveling agent, a rust inhibitor, a cross-linking agent other than component (B), a sensitizer, a polymerization inhibitor, and the like.
通常,偶合劑於顯影後的加熱處理中與(A)成分反應而進行交聯,或者於進行加熱處理的步驟中偶合劑自身進行聚合。藉此,可進一步提高所獲得的硬化物與基板的接著性。Usually, the coupling agent reacts with component (A) in the heat treatment after development to undergo cross-linking, or the coupling agent itself polymerizes in the heat treatment step. This can further improve the adhesion between the obtained cured product and the substrate.
作為較佳的矽烷偶合劑,可列舉具有脲鍵(-NH-CO-NH-)的化合物。藉此,即便於在200℃以下的低溫下進行硬化的情況下,亦可進一步提高與基板的接著性。 為使進行低溫下的硬化時接著性的顯現優異,更佳為由下述式(13)所表示的化合物。 [化26] (式(13)中,R31 及R32 分別獨立地為碳數1~5的烷基。a為1~10的整數,b為1~3的整數。)Preferred silane coupling agents include compounds having a urea bond (-NH-CO-NH-). Thereby, even when hardening is performed at a low temperature of 200° C. or lower, the adhesion to the substrate can be further improved. In order to achieve excellent development of adhesiveness during hardening at low temperature, a compound represented by the following formula (13) is more preferred. [Chemical 26] (In formula (13), R 31 and R 32 are each independently an alkyl group having 1 to 5 carbon atoms. a is an integer of 1 to 10, and b is an integer of 1 to 3.)
作為由式(13)所表示的化合物的具體例,可列舉脲甲基三甲氧基矽烷、脲甲基三乙氧基矽烷、2-脲乙基三甲氧基矽烷、2-脲乙基三乙氧基矽烷、3-脲丙基三甲氧基矽烷、3-脲丙基三乙氧基矽烷、4-脲丁基三甲氧基矽烷、4-脲丁基三乙氧基矽烷等,較佳為3-脲丙基三乙氧基矽烷。Specific examples of the compound represented by formula (13) include ureamethyltrimethoxysilane, ureamethyltriethoxysilane, 2-ureaethyltrimethoxysilane, and 2-ureaethyltriethoxysilane. Oxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 4-ureidobutyltrimethoxysilane, 4-ureidobutyltriethoxysilane, etc., preferably 3-Ureapropyltriethoxysilane.
作為矽烷偶合劑,亦可使用具有羥基或縮水甘油基的矽烷偶合劑。若併用具有羥基或縮水甘油基的矽烷偶合劑、及於分子內具有脲鍵的矽烷偶合劑,則可進一步提高低溫硬化時的硬化物對於基板的接著性。 作為具有羥基或縮水甘油基的矽烷偶合劑,可列舉:甲基苯基矽烷二醇、乙基苯基矽烷二醇、正丙基苯基矽烷二醇、異丙基苯基矽烷二醇、正丁基苯基矽烷二醇、異丁基苯基矽烷二醇、第三丁基苯基矽烷二醇、二苯基矽烷二醇、乙基甲基苯基矽醇、正丙基甲基苯基矽醇、異丙基甲基苯基矽醇、正丁基甲基苯基矽醇、異丁基甲基苯基矽醇、第三丁基甲基苯基矽醇、乙基正丙基苯基矽醇、乙基異丙基苯基矽醇、正丁基乙基苯基矽醇、異丁基乙基苯基矽醇、第三丁基乙基苯基矽醇、甲基二苯基矽醇、乙基二苯基矽醇、正丙基二苯基矽醇、異丙基二苯基矽醇、正丁基二苯基矽醇、異丁基二苯基矽醇、第三丁基二苯基矽醇、苯基矽烷三醇、1,4-雙(三羥基矽烷基)苯、1,4-雙(甲基二羥基矽烷基)苯、1,4-雙(乙基二羥基矽烷基)苯、1,4-雙(丙基二羥基矽烷基)苯、1,4-雙(丁基二羥基矽烷基)苯、1,4-雙(二甲基羥基矽烷基)苯、1,4-雙(二乙基羥基矽烷基)苯、1,4-雙(二丙基羥基矽烷基)苯、1,4-雙(二丁基羥基矽烷基)苯、及由下述式(14)所表示的化合物等。其中,特別為了進一步提高與基板的接著性,較佳為由式(14)所表示的化合物。As the silane coupling agent, a silane coupling agent having a hydroxyl group or a glycidyl group can also be used. When a silane coupling agent having a hydroxyl group or a glycidyl group and a silane coupling agent having a urea bond in the molecule are used together, the adhesion of the cured product to the substrate during low-temperature curing can be further improved. Examples of the silane coupling agent having a hydroxyl group or a glycidyl group include methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanediol, isopropylphenylsilanediol, and n-propylphenylsilanediol. Butylphenylsilanediol, isobutylphenylsilanediol, tert-butylphenylsilanediol, diphenylsilanediol, ethylmethylphenylsilanediol, n-propylmethylphenyl Silicone alcohol, isopropyl methylphenyl silicone alcohol, n-butylmethylphenyl silicone alcohol, isobutylmethylphenyl silicone alcohol, tert-butylmethylphenyl silicone alcohol, ethyl n-propylphenyl silicone alcohol, ethyl Cumene, n-butylethyl phenyl silicone, isobutylethyl phenyl silicone, tert-butylethyl phenyl silicone, methyldiphenyl silicone, ethyl di Phenylsilicol, n-propyldiphenylsilicol, isopropyldiphenylsilanol, n-butyldiphenylsilicol, isobutyldiphenylsilanol, tert-butyldiphenylsilanol , phenylsilanetriol, 1,4-bis(trihydroxysilyl)benzene, 1,4-bis(methyldihydroxysilyl)benzene, 1,4-bis(ethyldihydroxysilyl)benzene, 1,4-bis(propyldihydroxysilyl)benzene, 1,4-bis(butyldihydroxysilyl)benzene, 1,4-bis(dimethylhydroxysilyl)benzene, 1,4-bis (diethylhydroxysilyl)benzene, 1,4-bis(dipropylhydroxysilyl)benzene, 1,4-bis(dibutylhydroxysilyl)benzene, and those represented by the following formula (14) compounds, etc. Among them, in order to further improve the adhesiveness with the substrate, the compound represented by formula (14) is preferred.
[化27] (式(14)中,R33 為具有羥基或縮水甘油基的一價有機基,R34 及R35 分別獨立地為碳數1~5的烷基。c為1~10的整數,d為1~3的整數。)[Chemical 27] (In formula (14), R 33 is a monovalent organic group having a hydroxyl group or a glycidyl group, R 34 and R 35 are each independently an alkyl group having 1 to 5 carbon atoms. c is an integer of 1 to 10, and d is An integer from 1 to 3.)
作為由式(14)所表示的化合物,可列舉:羥基甲基三甲氧基矽烷、羥基甲基三乙氧基矽烷、2-羥基乙基三甲氧基矽烷、2-羥基乙基三乙氧基矽烷、3-羥基丙基三甲氧基矽烷、3-羥基丙基三乙氧基矽烷、4-羥基丁基三甲氧基矽烷、4-羥基丁基三乙氧基矽烷、縮水甘油氧基甲基三甲氧基矽烷、縮水甘油氧基甲基三乙氧基矽烷、2-縮水甘油氧基乙基三甲氧基矽烷、2-縮水甘油氧基乙基三乙氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、4-縮水甘油氧基丁基三甲氧基矽烷、4-縮水甘油氧基丁基三乙氧基矽烷等。Examples of the compound represented by formula (14) include hydroxymethyltrimethoxysilane, hydroxymethyltriethoxysilane, 2-hydroxyethyltrimethoxysilane, and 2-hydroxyethyltriethoxysilane. Silane, 3-hydroxypropyltrimethoxysilane, 3-hydroxypropyltriethoxysilane, 4-hydroxybutyltrimethoxysilane, 4-hydroxybutyltriethoxysilane, glycidyloxymethyl Trimethoxysilane, glycidoxymethyltriethoxysilane, 2-glycidoxyethyltrimethoxysilane, 2-glycidoxyethyltriethoxysilane, 3-glycidoxysilane Propyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 4-glycidoxybutyltrimethoxysilane, 4-glycidoxybutyltriethoxysilane, etc.
具有羥基或縮水甘油基的矽烷偶合劑較佳為更包含具有氮原子的基,較佳為更具有胺基或醯胺鍵的矽烷偶合劑。 作為更具有胺基的矽烷偶合劑,可列舉:雙(2-羥基甲基)-3-胺基丙基三乙氧基矽烷、雙(2-羥基甲基)-3-胺基丙基三甲氧基矽烷、雙(2-縮水甘油氧基甲基)-3-胺基丙基三乙氧基矽烷、雙(2-羥基甲基)-3-胺基丙基三甲氧基矽烷等。The silane coupling agent having a hydroxyl group or a glycidyl group is preferably a group having a nitrogen atom, and is preferably a silane coupling agent having an amine group or an amide bond. Silane coupling agents having an amino group include bis(2-hydroxymethyl)-3-aminopropyltriethoxysilane, bis(2-hydroxymethyl)-3-aminopropyltrimethyl Oxysilane, bis(2-glycidoxymethyl)-3-aminopropyltriethoxysilane, bis(2-hydroxymethyl)-3-aminopropyltrimethoxysilane, etc.
作為更具有醯胺鍵的矽烷偶合劑,可列舉由R36 -(CH2 )e -CO-NH-(CH2 )f -Si(OR37 )3 (R36 為羥基或縮水甘油基,e及f分別獨立地為1~3的整數,R37 為甲基、乙基或丙基)所表示的化合物等。As a silane coupling agent having an amide bond, there may be mentioned a silane coupling agent composed of R 36 -(CH 2 ) e -CO-NH-(CH 2 ) f -Si(OR 37 ) 3 (R 36 is a hydroxyl group or a glycidyl group, e and f are each independently an integer of 1 to 3, and R 37 is a compound represented by a methyl, ethyl or propyl group, etc.
矽烷偶合劑可單獨使用一種,亦可組合兩種以上。One type of silane coupling agent may be used alone, or two or more types of silane coupling agents may be used in combination.
於使用矽烷偶合劑的情況下,相對於(A)成分100質量份,矽烷偶合劑的含量較佳為0.1質量份~20質量份,更佳為0.3質量份~10質量份,進而佳為1質量份~10質量份。When a silane coupling agent is used, the content of the silane coupling agent is preferably 0.1 to 20 parts by mass, more preferably 0.3 to 10 parts by mass, and even more preferably 100 parts by mass per 100 parts by mass of component (A) Parts by mass ~ 10 parts by mass.
藉由包含界面活性劑或調平劑,可提高塗佈性(例如抑制條紋(striation)(膜厚的不均))及顯影性。By including a surfactant or a leveling agent, it is possible to improve coating properties (for example, suppression of streaking (uneven film thickness)) and developability.
作為界面活性劑或調平劑,例如可列舉聚氧化乙烯月桂基醚、聚氧化乙烯硬酯基醚、聚氧化乙烯油烯基醚、聚氧化乙烯辛基苯酚醚等,作為市售品,可列舉商品名「美佳法(Megafac)F171」、「美佳法(Megafac)F173」、「美佳法(Megafac)R-08」(以上,迪愛生(DIC)股份有限公司製造);商品名「弗洛德(Fluorad)FC430」、「弗洛德(Fluorad)FC431」(以上,住友3M股份有限公司製造);商品名「有機矽氧烷聚合物(organic siloxane polymer)KP341」、「KBM303」、「KBM403」、「KBM803」(以上,信越化學工業股份有限公司製造)等。Examples of surfactants or leveling agents include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, etc., and commercially available products include List the trade names "Megafac F171", "Megafac F173", and "Megafac R-08" (the above, manufactured by DIC Co., Ltd.); the trade name "Flo" "Fluorad FC430", "Fluorad FC431" (the above, manufactured by Sumitomo 3M Co., Ltd.); trade names "organic siloxane polymer (organic siloxane polymer) KP341", "KBM303", "KBM403" ”, “KBM803” (the above, manufactured by Shin-Etsu Chemical Industry Co., Ltd.), etc.
界面活性劑及調平劑可單獨使用一種,亦可組合兩種以上。A surfactant and a leveling agent may be used individually by one type, or two or more types may be combined.
於包含界面活性劑或調平劑的情況下,相對於(A)成分100質量份,界面活性劑或調平劑的含量較佳為0.01質量份~10質量份,更佳為0.05質量份~5質量份,進而佳為0.05質量份~3質量份。When a surfactant or a leveling agent is included, the content of the surfactant or the leveling agent is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 100 parts by mass relative to 100 parts by mass of the component (A). 5 parts by mass, more preferably 0.05 parts by mass to 3 parts by mass.
藉由包含防鏽劑,可抑制銅及銅合金的腐蝕或防止變色。 作為防鏽劑,例如可列舉三唑衍生物及四唑衍生物等。 作為防鏽劑,可列舉:5-胺基四唑(例如5-胺基-1H-四唑)、苯並三唑、1-羥基苯並三唑、1H-苯並三唑-1-乙腈、苯並三唑-5-羧酸、1H-苯並三唑-1-甲醇、羧基苯並三唑、巰基苯並三唑等。該些中,較佳為5-胺基四唑、苯並三唑或1-羥基苯並三唑。 防鏽劑可單獨使用一種,亦可組合兩種以上。By including rust inhibitors, corrosion of copper and copper alloys can be inhibited or discoloration can be prevented. Examples of rust inhibitors include triazole derivatives and tetrazole derivatives. Examples of rust inhibitors include: 5-aminotetrazole (for example, 5-amino-1H-tetrazole), benzotriazole, 1-hydroxybenzotriazole, 1H-benzotriazole-1-acetonitrile , benzotriazole-5-carboxylic acid, 1H-benzotriazole-1-methanol, carboxybenzotriazole, mercaptobenzotriazole, etc. Among these, 5-aminotetrazole, benzotriazole or 1-hydroxybenzotriazole is preferred. One type of rust inhibitor may be used alone, or two or more types may be combined.
於使用防鏽劑的情況下,相對於(A)成分100質量份,防鏽劑的含量較佳為0.01質量份~10質量份,更佳為0.1質量份~5質量份,進而佳為0.5質量份~3質量份。When using an anti-rust agent, the content of the anti-rust agent is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and still more preferably 0.5 parts by mass relative to 100 parts by mass of the component (A). Parts by mass ~ 3 parts by mass.
藉由包含(B)成分以外的交聯劑,可靈活地調整感光特性、硬化物特性等,特別是可使硬化物特性大幅變動。By including a cross-linking agent other than component (B), the photosensitive characteristics, cured product properties, etc. can be flexibly adjusted, and in particular, the cured product properties can be significantly changed.
作為(B)成分以外的交聯劑,例如可列舉:二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、四乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、四乙二醇二甲基丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、1,4-丁二醇二甲基丙烯酸酯、1,6-己二醇二甲基丙烯酸酯、三羥甲基丙烷二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、 四羥甲基甲烷四丙烯酸酯、四羥甲基甲烷四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇六甲基丙烯酸酯、乙氧基化季戊四醇四丙烯酸酯、乙氧基化異三聚氰酸三丙烯酸酯、乙氧基化異三聚氰酸三甲基丙烯酸酯、異三聚氰酸丙烯醯基氧基乙酯、異三聚氰酸甲基丙烯醯基氧基乙酯等。Examples of the crosslinking agent other than component (B) include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, and triethylene glycol diacrylate. Ethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethyl acrylate, 1,6-hexanediol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane Propane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, Tetramethylolmethane tetraacrylate, tetramethylolmethane tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, ethoxylated pentaerythritol tetraacrylate, ethoxylated isotrimer Triacrylate cyanate, ethoxylated trimethacrylate isocyanurate, acryloxyethyl isocyanurate, methylacryloxyethyl isocyanurate, etc.
(B)成分以外的交聯劑可單獨使用一種,亦可組合兩種以上。Cross-linking agents other than the component (B) may be used alone or in combination of two or more.
於包含(B)成分以外的交聯劑的情況下,相對於(A)成分100質量份,(B)成分以外的交聯劑的含量較佳為0.01質量份~20質量份,更佳為0.05質量份~15質量份,進而佳為1質量份~12質量份。When a cross-linking agent other than component (B) is contained, the content of the cross-linking agent other than component (B) is preferably 0.01 to 20 parts by mass based on 100 parts by mass of component (A), more preferably 0.05 parts by mass to 15 parts by mass, more preferably 1 part by mass to 12 parts by mass.
作為增感劑,可列舉:米其勒酮、安息香、2-甲基安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香丁醚、2-第三丁基蒽醌、1,2-苯並-9,10-蒽醌、蒽醌、甲基蒽醌、4,4'-雙-(二乙基胺基)二苯甲酮、苯乙酮、二苯甲酮、硫雜蒽酮、1,5-苊萘、2,2-二甲氧基-2-苯基苯乙酮、1-羥基環己基苯基酮、2-甲基-[4-(甲硫基)苯基]-2-嗎啉基-1-丙酮、二乙醯基苄基、苄基二甲基縮酮、苄基二乙基縮酮、二苯基二硫醚、蒽、菲醌(phenanthrenequinone)、核黃素四丁酸酯(riboflavin tetrabutyrate)、吖啶橙(acridine orange)、赤藻紅(erythrosine)、菲醌、2-異丙基硫雜蒽酮、2,6-雙(對二乙基胺基苯亞甲基)-4-甲基-4-氮雜環己酮、6-雙(對二甲基胺基苯亞甲基)-環戊酮、2,6-雙(對二乙基胺基苯亞甲基)-4-苯基環己酮、胺基苯乙烯基酮、3-香豆素酮化合物、雙香豆素化合物、N-苯基甘胺酸、N-苯基二乙醇胺、及3,3',4,4'-四(第三丁基過氧基羰基)二苯甲酮、由下述式所表示的化合物等。 [化28] Examples of sensitizers include Michelone, benzoin, 2-methylbenzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin butyl ether, 2-tert-butylanthraquinone, 1,2- Benzo-9,10-anthraquinone, anthraquinone, methylanthraquinone, 4,4'-bis-(diethylamino)benzophenone, acetophenone, benzophenone, thioxanthrone , 1,5-acenaphthylenenaphthalene, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenylketone, 2-methyl-[4-(methylthio)phenyl] -2-morpholinyl-1-propanone, diethyl benzyl, benzyl dimethyl ketal, benzyl diethyl ketal, diphenyl disulfide, anthracene, phenanthrenequinone (phenanthrenequinone), core Riboflavin tetrabutyrate, acridine orange, erythrosine, phenanthrenequinone, 2-isopropylthioanthrone, 2,6-bis(p-diethylamine) Benzylidene)-4-methyl-4-azacyclohexanone, 6-bis(p-dimethylaminobenzylidene)-cyclopentanone, 2,6-bis(p-diethyl) Aminophenylidene)-4-phenylcyclohexanone, aminostyryl ketone, 3-coumarone compound, dicoumarin compound, N-phenylglycine, N-phenyldi Ethanolamine, 3,3',4,4'-tetrakis(tert-butylperoxycarbonyl)benzophenone, compounds represented by the following formula, etc. [Chemical 28]
增感劑可單獨使用一種,亦可併用兩種以上。One type of sensitizer may be used alone, or two or more types may be used in combination.
於含有增感劑的情況下,相對於(A)成分100質量份,增感劑的調配量較佳為0.1質量份~1.5質量份,更佳為0.2質量份~1.2質量份。When a sensitizer is contained, the compounding amount of the sensitizer is preferably 0.1 to 1.5 parts by mass, more preferably 0.2 to 1.2 parts by mass relative to 100 parts by mass of component (A).
藉由含有聚合禁止劑,可確保良好的保存穩定性。 作為聚合禁止劑,可列舉自由基聚合禁止劑、自由基聚合抑制劑等。By containing a polymerization inhibitor, good storage stability can be ensured. Examples of the polymerization inhibitor include radical polymerization inhibitors, radical polymerization inhibitors, and the like.
作為聚合禁止劑,例如可列舉:1,4,4-三甲基-2,3-二氮雜雙環[3.2.2]-壬-2-烯-2,3-二氧化物、對甲氧基苯酚、二苯基-對苯醌、苯醌、對苯二酚、鄰苯三酚、酚噻嗪(phenothiazine)、間苯二酚、鄰二硝基苯、對二硝基苯、間二硝基苯、菲醌、N-苯基-2-萘胺、銅鐵靈(cupferron)、2,5-甲基苯醌(2,5-toluquinone)、單寧酸、對苄基胺基苯酚、亞硝基胺類等。Examples of polymerization inhibitors include: 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]-non-2-ene-2,3-dioxide, p-methoxy phenol, diphenyl-p-benzoquinone, benzoquinone, hydroquinone, pyrogallol, phenothiazine (phenothiazine), resorcinol, o-dinitrobenzene, p-dinitrophenyl, m-di Nitrobenzene, phenanthrenequinone, N-phenyl-2-naphthylamine, cupferron, 2,5-toluquinone, tannic acid, p-benzylaminophenol , nitrosamines, etc.
聚合禁止劑可單獨使用一種,亦可組合兩種以上。A polymerization inhibitor may be used individually by 1 type, or in combination of 2 or more types.
於含有聚合禁止劑的情況下,作為聚合禁止劑的含量,就感光性樹脂組成物的保存穩定性及所獲得的硬化物的耐熱性的觀點而言,相對於(A)成分100質量份,較佳為0.01質量份~30質量份,更佳為0.01質量份~10質量份,進而佳為0.05質量份~5質量份。When a polymerization inhibitor is contained, the content of the polymerization inhibitor is, from the viewpoint of the storage stability of the photosensitive resin composition and the heat resistance of the obtained cured product, relative to 100 parts by mass of the component (A). Preferably, it is 0.01-30 parts by mass, More preferably, it is 0.01-10 parts by mass, Still more preferably, it is 0.05-5 parts by mass.
本發明的感光性樹脂組成物本質上包含(A)成分~(E)成分、以及任意的(F)成分、偶合劑、界面活性劑、調平劑、防鏽劑、(B)成分以外的交聯劑、增感劑及聚合禁止劑,亦可於無損本發明的效果的範圍內包含其他不可避免的雜質。 本發明的感光性樹脂組成物的例如80質量%以上、90質量%以上、95質量%以上、98質量%以上或100質量%可包含 (A)成分~(E)成分、 (A)成分~(F)成分、或 (A)成分~(E)成分、以及任意的(F)成分、偶合劑、界面活性劑、調平劑、防鏽劑、(B)成分以外的交聯劑、增感劑及聚合禁止劑。The photosensitive resin composition of the present invention essentially contains components (A) to (E) and optional (F) components, coupling agents, surfactants, leveling agents, rust inhibitors, and components other than (B). The cross-linking agent, sensitizer and polymerization inhibitor may also contain other unavoidable impurities within the scope that does not impair the effects of the present invention. The photosensitive resin composition of the present invention may contain, for example, 80 mass% or more, 90 mass% or more, 95 mass% or more, 98 mass% or more, or 100 mass% (A) component ~ (E) component, (A) component ~ (F) component, or (A) component to (E) component, and optional (F) component, coupling agent, surfactant, leveling agent, rust inhibitor, cross-linking agent other than (B) component, sensitizer and polymerization inhibitor .
本發明的硬化物可藉由將所述感光性樹脂組成物硬化而獲得。 本發明的硬化物可用作圖案硬化物,亦可用作無圖案的硬化物。 本發明的硬化物的膜厚較佳為5 μm~20 μm。The cured product of the present invention can be obtained by curing the photosensitive resin composition. The hardened material of the present invention can be used as a patterned hardened material or as a non-patterned hardened material. The film thickness of the hardened material of the present invention is preferably 5 μm to 20 μm.
於本發明的圖案硬化物的製造方法中,包括:將所述感光性樹脂組成物塗佈於基板上並加以乾燥而形成感光性樹脂膜的步驟;對感光性樹脂膜進行圖案曝光而獲得樹脂膜的步驟;使用有機溶劑對圖案曝光後的樹脂膜進行顯影而獲得圖案樹脂膜的步驟;及對圖案樹脂膜進行加熱處理的步驟。 藉此,可獲得圖案硬化物。The method for manufacturing a patterned hardened product of the present invention includes the steps of applying the photosensitive resin composition on a substrate and drying it to form a photosensitive resin film; and subjecting the photosensitive resin film to pattern exposure to obtain a resin. The steps of forming a film; using an organic solvent to develop the resin film after pattern exposure to obtain a patterned resin film; and performing a heat treatment on the patterned resin film. Thereby, a patterned hardened product can be obtained.
製造無圖案的硬化物的方法例如包括形成所述感光性樹脂膜的步驟及進行加熱處理的步驟。進而,亦可包括進行曝光的步驟。The method of producing a patternless cured product includes, for example, a step of forming the photosensitive resin film and a step of performing heat treatment. Furthermore, the step of exposure may also be included.
作為基板,可列舉:玻璃基板;Si基板(矽晶圓)等半導體基板;TiO2 基板、SiO2 基板等金屬氧化物絕緣體基板;氮化矽基板;銅基板;銅合金基板等。Examples of substrates include: glass substrates; semiconductor substrates such as Si substrates (silicon wafers); metal oxide insulator substrates such as TiO 2 substrates and SiO 2 substrates; silicon nitride substrates; copper substrates; copper alloy substrates, etc.
塗佈方法並無特別限制,可使用旋轉器等來進行。The coating method is not particularly limited, and a rotator or the like can be used.
乾燥可使用加熱板、烘箱等來進行。 乾燥溫度較佳為90℃~150℃,就確保溶解對比度的觀點而言,更佳為90℃~120℃。 乾燥時間較佳為30秒~5分鐘。 乾燥亦可進行兩次以上。 藉此,可獲得將所述感光性樹脂組成物形成為膜狀而得的感光性樹脂膜。Drying can be performed using hot plates, ovens, etc. The drying temperature is preferably 90°C to 150°C, and from the viewpoint of ensuring the dissolution contrast, the drying temperature is more preferably 90°C to 120°C. The drying time is preferably 30 seconds to 5 minutes. Drying can also be performed more than twice. Thereby, a photosensitive resin film obtained by forming the photosensitive resin composition into a film shape can be obtained.
感光性樹脂膜的膜厚較佳為5 μm~100 μm,更佳為6 μm~50 μm,進而佳為7 μm~30 μm。The film thickness of the photosensitive resin film is preferably 5 μm to 100 μm, more preferably 6 μm to 50 μm, further preferably 7 μm to 30 μm.
關於圖案曝光,例如介隔光罩而以規定的圖案進行曝光。 所照射的光化射線可列舉i射線、h射線等紫外線、可見光線、放射線等,較佳為i射線。 作為曝光裝置,可使用平行曝光機、投影曝光機、步進機、掃描曝光機等。Regarding pattern exposure, for example, exposure is performed in a predetermined pattern through a photomask. Examples of the actinic rays to be irradiated include ultraviolet rays such as i-rays and h-rays, visible rays, radiation, etc., and i-rays are preferred. As the exposure device, a parallel exposure machine, a projection exposure machine, a stepper machine, a scanning exposure machine, etc. can be used.
藉由進行顯影,可獲得形成有圖案的樹脂膜(圖案樹脂膜)。於使用負型感光性樹脂組成物的情況下,通常利用顯影液將未曝光部去除。 用作顯影液的有機溶劑可單獨使用感光性樹脂膜的良溶媒、或適宜混合使用良溶媒與不良溶媒來作為顯影液。 作為良溶媒,可列舉:N-甲基-2-吡咯啶酮、N-乙醯基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、二甲基亞碸、γ-丁內酯、α-乙醯基-γ-丁內酯、環戊酮、環己酮等。 作為不良溶媒,可列舉:甲苯、二甲苯、甲醇、乙醇、異丙醇、丙二醇單甲醚乙酸酯、丙二醇單甲醚及水等。By performing development, a resin film on which a pattern is formed (patterned resin film) can be obtained. When using a negative photosensitive resin composition, the unexposed portion is usually removed using a developer. As the organic solvent used as a developer, a good solvent of the photosensitive resin film may be used alone, or a good solvent and a poor solvent may be appropriately mixed and used as the developer. Examples of good solvents include N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N,N-dimethylacetamide, and N,N-dimethylformamide. Amine, dimethylsulfoxide, γ-butyrolactone, α-acetyl-γ-butyrolactone, cyclopentanone, cyclohexanone, etc. Examples of poor solvents include toluene, xylene, methanol, ethanol, isopropyl alcohol, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and water.
亦可向顯影液中添加界面活性劑。作為添加量,相對於顯影液100質量份,較佳為0.01質量份~10質量份,更佳為0.1質量份~5質量份。Surfactants can also be added to the developer. The addition amount is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass relative to 100 parts by mass of the developer.
顯影時間例如可設為將感光性樹脂膜浸漬並完全溶解為止的時間的兩倍。 顯影時間亦因所使用的(A)成分而異,較佳為10秒~15分鐘,更佳為10秒~5分鐘,就生產性的觀點而言,進而佳為20秒~5分鐘。The development time can be set to twice the time until the photosensitive resin film is immersed and completely dissolved, for example. The development time also varies depending on the component (A) used, but is preferably 10 seconds to 15 minutes, more preferably 10 seconds to 5 minutes, and further preferably 20 seconds to 5 minutes from the viewpoint of productivity.
顯影後,亦可藉由淋洗液來進行清洗。 作為淋洗液,可單獨使用或適宜混合使用蒸餾水、甲醇、乙醇、異丙醇、甲苯、二甲苯、丙二醇單甲醚乙酸酯、丙二醇單甲醚等,另外,亦可階段性地組合使用。After development, it can also be cleaned with eluent. As the eluent, distilled water, methanol, ethanol, isopropyl alcohol, toluene, xylene, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, etc. can be used alone or in appropriate mixtures. In addition, they can also be used in combination in stages. .
藉由對圖案樹脂膜進行加熱處理,可獲得圖案硬化物。 (A)成分的聚醯亞胺前驅物可藉由加熱處理步驟而引起脫水閉環反應,通常成為相對應的聚醯亞胺。By heat-treating the patterned resin film, a patterned cured product can be obtained. The polyimide precursor of component (A) can cause dehydration and ring-closure reaction through the heat treatment step, and usually becomes the corresponding polyimide.
加熱處理的溫度較佳為250℃以下,更佳為120℃~250℃,進而佳為200℃以下或160℃~200℃。 藉由為所述範圍內,可將對於基板或器件的損傷抑制得小,且可良率良好地生產器件,並可實現製程的省能量化。The temperature of the heat treatment is preferably 250°C or lower, more preferably 120°C to 250°C, further preferably 200°C or lower or 160°C to 200°C. By being within the above range, damage to the substrate or device can be suppressed to a minimum, devices can be produced with good yield, and energy saving in the manufacturing process can be achieved.
加熱處理的時間較佳為5小時以下,更佳為30分鐘~3小時。 藉由為所述範圍內,可充分進行交聯反應或脫水閉環反應。 加熱處理的環境可為大氣中,亦可為氮氣等惰性環境中,就可防止圖案樹脂膜氧化的觀點而言,較佳為氮氣環境下。The heat treatment time is preferably 5 hours or less, more preferably 30 minutes to 3 hours. By being within the above range, the cross-linking reaction or the dehydration ring-closure reaction can be sufficiently performed. The environment for the heat treatment may be in the atmosphere or in an inert environment such as nitrogen. From the perspective of preventing oxidation of the patterned resin film, a nitrogen environment is preferred.
作為加熱處理中所使用的裝置,可列舉:石英管爐、加熱板、快速退火爐、垂直式擴散爐、紅外線硬化爐、電子束硬化爐、微波硬化爐等。Examples of equipment used for heat treatment include quartz tube furnaces, hot plates, rapid annealing furnaces, vertical diffusion furnaces, infrared hardening furnaces, electron beam hardening furnaces, microwave hardening furnaces, and the like.
本發明的硬化物可用作鈍化膜、緩衝塗膜、層間絕緣膜、覆蓋塗層或表面保護膜等。 使用選自由所述鈍化膜、緩衝塗膜、層間絕緣膜、覆蓋塗層及表面保護膜等所組成的群組中的一種以上,可製造可靠性高的半導體裝置、多層配線板、各種電子器件、積層器件(多晶片扇出晶圓級封裝等)等電子零件等。The hardened material of the present invention can be used as a passivation film, a buffer coating film, an interlayer insulating film, a cover coating, a surface protection film, or the like. Highly reliable semiconductor devices, multilayer wiring boards, and various electronic devices can be manufactured by using at least one selected from the group consisting of the passivation film, buffer coating film, interlayer insulating film, cover coating, surface protective film, etc. , built-up devices (multi-chip fan-out wafer-level packaging, etc.) and other electronic components.
參照圖式對作為本發明的電子零件的半導體裝置的製造步驟的一例進行說明。 圖1是作為本發明一實施形態的電子零件的多層配線結構的半導體裝置的製造步驟圖。 於圖1中,具有電路元件的Si基板等半導體基板1中除電路元件的規定部分以外由矽氧化膜等保護膜2等被覆,並於露出的電路元件上形成第一導體層3。其後,於所述半導體基板1上形成層間絕緣膜4。An example of the manufacturing steps of the semiconductor device as the electronic component of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing the manufacturing steps of a semiconductor device having a multilayer wiring structure as an electronic component according to an embodiment of the present invention. In FIG. 1 , a semiconductor substrate 1 such as a Si substrate having a circuit element is covered with a protective film 2 such as a silicon oxide film, except for a predetermined portion of the circuit element, and a first conductor layer 3 is formed on the exposed circuit element. Thereafter, an interlayer insulating film 4 is formed on the semiconductor substrate 1 .
接著,於層間絕緣膜4上形成氯化橡膠(chlorinated rubber)系、苯酚酚醛清漆系等的感光性樹脂層5,藉由公知的照片蝕刻技術以使規定部分的層間絕緣膜4露出的方式設置窗6A。Next, a photosensitive resin layer 5 of a chlorinated rubber system, a phenol novolac system, or the like is formed on the interlayer insulating film 4, and is disposed in such a manner that a predetermined portion of the interlayer insulating film 4 is exposed by a known photo etching technique. Window 6A.
窗6A中所露出的層間絕緣膜4選擇性地受到蝕刻,從而設置窗6B。 繼而,使用如不腐蝕自窗6B露出的第一導體層3而僅腐蝕感光性樹脂層5般的蝕刻溶液將感光性樹脂層5完全去除。The interlayer insulating film 4 exposed in the window 6A is selectively etched, thereby providing the window 6B. Next, the photosensitive resin layer 5 is completely removed using an etching solution that does not corrode the first conductor layer 3 exposed from the window 6B but only corrodes the photosensitive resin layer 5 .
進而,使用公知的照片蝕刻技術,形成第二導體層7,並進行與第一導體層3的電性連接。 於形成三層以上的多層配線構造的情況下,可反覆進行所述步驟來形成各層。Furthermore, a known photo etching technique is used to form the second conductor layer 7 and electrically connect it to the first conductor layer 3 . When forming a multilayer wiring structure of three or more layers, the above steps may be repeated to form each layer.
接著,使用所述感光性樹脂組成物,藉由圖案曝光而開設窗6C,並形成表面保護膜8。表面保護膜8保護第二導體層7免受來自外部的應力、α射線等的影響,所獲得的半導體裝置的可靠性優異。 再者,於所述示例中,亦可使用本發明的感光性樹脂組成物來形成層間絕緣膜。 [實施例]Next, using the photosensitive resin composition, the window 6C is opened by pattern exposure, and the surface protective film 8 is formed. The surface protective film 8 protects the second conductor layer 7 from external stress, α-rays, and the like, and the obtained semiconductor device has excellent reliability. Furthermore, in the above example, the photosensitive resin composition of the present invention can also be used to form an interlayer insulating film. [Example]
以下,基於實施例及比較例來對本發明進行更具體說明。再者,本發明並不限定於下述實施例。Hereinafter, the present invention will be described in more detail based on Examples and Comparative Examples. In addition, this invention is not limited to the following Example.
合成例1(A1的合成) 將7.07 g的3,3',4,4'-二苯基醚四羧酸二酐(ODPA)與4.12 g的2,2'-二甲基聯苯-4,4'-二胺(DMAP)溶解於30 g的N-甲基-2-吡咯啶酮(NMP)中,於30℃下攪拌4小時,其後,於室溫下攪拌一夜,從而獲得聚醯胺酸。於水冷下向其中添加9.45 g的三氟乙酸酐,於45℃下攪拌3小時,並添加7.08 g的甲基丙烯酸-2-羥基乙酯(HEMA)。將該反應液滴加至蒸餾水中,對沈澱物進行過濾分離及收集,並進行減壓乾燥,藉此獲得聚醯亞胺前驅物A1。 於以下條件下,使用膠體滲透層析儀(Gel Permeation Chromatograph,GPC)法,並藉由標準聚苯乙烯換算而求出數量平均分子量。A1的數量平均分子量為40,000。Synthesis Example 1 (Synthesis of A1) Mix 7.07 g of 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride (ODPA) and 4.12 g of 2,2'-dimethylbiphenyl-4,4'-diamine (DMAP ) was dissolved in 30 g of N-methyl-2-pyrrolidone (NMP), stirred at 30°C for 4 hours, and then stirred at room temperature overnight to obtain polyamic acid. 9.45 g of trifluoroacetic anhydride was added thereto under water cooling, the mixture was stirred at 45° C. for 3 hours, and 7.08 g of 2-hydroxyethyl methacrylate (HEMA) was added. The reaction liquid is added dropwise to distilled water, and the precipitate is filtered, separated, collected, and dried under reduced pressure to obtain polyimide precursor A1. Under the following conditions, use the Gel Permeation Chromatograph (GPC) method and calculate the number average molecular weight by converting it to standard polystyrene. The number average molecular weight of A1 is 40,000.
使用相對於0.5 mg的A1而溶劑[四氫呋喃(THF)/二甲基甲醯胺(DMF)=1/1(容積比)]為1 mL的溶液來進行測定。The measurement was performed using a solution in which the solvent [tetrahydrofuran (THF)/dimethylformamide (DMF) = 1/1 (volume ratio)] was 1 mL per 0.5 mg of A1.
測定裝置:檢測器 日立製作所股份有限公司製造的L4000UV 泵:日立製作所股份有限公司製造的L6000 島津製作所股份有限公司製造的C-R4A Chromatopac 測定條件:管柱Gelpack GL-S300MDT-5×2根 洗脫液:THF/DMF=1/1(容積比) LiBr(0.03 mol/L)、H3 PO4 (0.06 mol/L) 流速:1.0 mL/min,檢測器:UV 270 nmMeasuring device: Detector L4000UV manufactured by Hitachi, Ltd. Pump: L6000 manufactured by Hitachi, Ltd. C-R4A Chromatopac manufactured by Shimadzu Corporation Measurement conditions: Column Gelpack GL-S300MDT-5×2 elution Liquid: THF/DMF=1/1 (volume ratio) LiBr (0.03 mol/L), H 3 PO 4 (0.06 mol/L) Flow rate: 1.0 mL/min, detector: UV 270 nm
另外,於以下條件下,進行核磁共振(Nuclear Magnetic Resonance,NMR)測定來算出A1的酯化率(ODPA的羧基的與HEMA的反應率)。酯化率相對於聚醯胺酸的所有羧基而為80莫耳%(剩餘20莫耳%為羧基)。In addition, Nuclear Magnetic Resonance (NMR) measurement was performed under the following conditions to calculate the esterification rate of A1 (the reaction rate between the carboxyl group of ODPA and HEMA). The esterification rate was 80 mol% based on all the carboxyl groups of the polyamic acid (the remaining 20 mol% were carboxyl groups).
測定設備:布魯克拜厄斯賓(Bruker BioSpin)公司製造的AV400M 磁場強度:400 MHz 基準物質:四甲基矽烷(tetramethylsilane,TMS) 溶媒:二甲基亞碸(dimethyl sulfoxide,DMSO)Measuring equipment: AV400M manufactured by Bruker BioSpin Magnetic field strength: 400 MHz Reference material: tetramethylsilane (TMS) Solvent: dimethyl sulfoxide (DMSO)
實施例1~實施例9及比較例1~比較例3 (感光性樹脂組成物的製備) 按照表1及表2所示的成分及調配量製備實施例1~實施例9及比較例1~比較例3的感光性樹脂組成物。表1及表2的調配量是各成分相對於100質量份的A1的質量份。Examples 1 to 9 and Comparative Examples 1 to 3 (Preparation of photosensitive resin composition) The photosensitive resin compositions of Examples 1 to 9 and Comparative Examples 1 to 3 were prepared according to the components and compounding amounts shown in Table 1 and Table 2. The compounding amounts in Tables 1 and 2 are parts by mass of each component relative to 100 parts by mass of A1.
所使用的各成分如下所述。作為(A)成分,使用合成例1中所獲得的A1。The ingredients used are described below. As component (A), A1 obtained in Synthesis Example 1 was used.
(B)成分:具有脂肪族環狀骨架的聚合性單體 B1:A-DCP(新中村化學工業股份有限公司製造,三環癸烷二甲醇二丙烯酸酯,由下述式B1所表示的化合物) [化29] (B) Component: Polymerizable monomer B1 having an aliphatic cyclic skeleton: A-DCP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., tricyclodecane dimethanol diacrylate, a compound represented by the following formula B1 ) [Chemicalization 29]
(C)成分:光聚合起始劑 C1:豔佳固(IRGACURE)OXE 02(日本巴斯夫(BASF Japan)股份有限公司製造,乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯基肟)) C2:G-1820(PDO)(拉姆森(Lambson)股份有限公司製造,1-苯基-1,2-丙二酮-2-(鄰乙氧基羰基)肟)(C) Component: Photopolymerization initiator C1: IRGACURE OXE 02 (manufactured by BASF Japan Co., Ltd., ethyl ketone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole) -3-yl]-,1-(O-acetyl oxime)) C2: G-1820 (PDO) (manufactured by Lambson Co., Ltd., 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime)
(D)成分 D1:9,10二丁氧基蒽(川崎化成工業股份有限公司製造)(D) Ingredients D1: 9,10 dibutoxyanthracene (manufactured by Kawasaki Chemical Industry Co., Ltd.)
(E)成分:溶劑 E1:N-甲基-2-吡咯啶酮 E2:KJCMPA-100(KJ化學品(KJ Chemicals)股份有限公司製造,由下述式E2所表示的化合物) [化30] (E) Component: Solvent E1: N-methyl-2-pyrrolidinone E2: KJCMPA-100 (manufactured by KJ Chemicals Co., Ltd., a compound represented by the following formula E2) [Chemical 30]
(F)成分:熱聚合起始劑 F1:過枯基(Percumyl)D(日油股份有限公司製造,雙(1-苯基-1-甲基乙基)過氧化物,由下述式所表示的化合物) [化31] (F) Component: Thermal polymerization initiator F1: Percumyl D (manufactured by NOF Co., Ltd., bis(1-phenyl-1-methylethyl) peroxide, represented by the following formula represented compound) [Chemical 31]
(B)成分以外的交聯劑 ATM-4E:乙氧基化季戊四醇四丙烯酸酯(新中村化學工業股份有限公司製造,由下述式所表示的化合物(n11+n12+n13+n14為4)) [化32] (B) Cross-linking agent other than components ATM-4E: Ethoxylated pentaerythritol tetraacrylate (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., a compound represented by the following formula (n11+n12+n13+n14 is 4) ) [Chemical 32]
增感劑 BCIM:2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基聯咪唑(海姆福德研究(Hampford Research)公司製造,由下述式所表示的化合物) [化33] Sensitizer BCIM: 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole (manufactured by Hampford Research, manufactured by compound represented by the formula) [Chemical 33]
隱色體色素LCV:隱色結晶紫(Leucocrystal Violet)(山田化學工業股份有限公司製造,由下述式所表示的化合物) [化34] Leucochrome LCV: Leucocrystal Violet (manufactured by Yamada Chemical Industry Co., Ltd., a compound represented by the following formula) [Chemical 34]
EMK:4,4'-雙(二乙基胺基)二苯甲酮EMK: 4,4'-bis(diethylamino)benzophenone
聚合禁止劑 托賓(Taobn):1,4,4-三甲基-2,3-二氮雜雙環[3.2.2]-壬-2-烯-2,3-二氧化物(海姆福德研究(Hampford Research)公司製造)Polymerization inhibitor Taobn: 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]-non-2-ene-2,3-dioxide (Hemford Research ( Hampford Research Company)
防鏽劑 5Atz:5-胺基-1H-四唑(東京化成工業股份有限公司製造)Rust inhibitor 5Atz: 5-amino-1H-tetrazole (manufactured by Tokyo Chemical Industry Co., Ltd.)
接著助劑 UCT-801:3-脲丙基三乙氧基矽烷(聯合化學技術(United Chemical Technologies)公司製造)Then auxiliary UCT-801: 3-ureidopropyltriethoxysilane (manufactured by United Chemical Technologies)
(顯影後的殘膜率的測定1) 使用塗佈裝置Act8(東京電子股份有限公司製造),將所獲得的感光性樹脂組成物旋塗於矽晶圓上,於100℃下乾燥2分鐘後,於110℃下乾燥2分鐘而形成乾燥膜厚為7 μm~15 μm的感光性樹脂膜。 將使所獲得的感光性樹脂膜浸漬於環戊酮中並完全溶解為止的時間的兩倍設定為顯影時間。 另外,以與上述相同的方式製作感光性樹脂膜,對於所獲得的感光性樹脂膜,使用i射線步進器FPA-3000iW(佳能(Canon)股份有限公司製造)照射200 mJ/cm2 的i射線來進行曝光。 使用Act8,將曝光後的樹脂膜於環戊酮中以所述顯影時間進行覆液顯影後,利用丙二醇單甲醚乙酸酯(PGMEA)進行淋洗清洗,獲得樹脂膜。 關於在110℃的加熱板上加熱2分鐘後的膜厚以及顯影後的膜厚,藉由將膜的一部分劃開而使矽晶圓露出,使用接觸針式輪廓儀迪塔克(Dektak)150(布魯克(Bruker)公司製造)測定自露出的矽晶圓表面至膜表面為止的高度(膜厚的測定於以下相同)。 顯影後的膜厚10 μm除以在110℃的加熱板上加熱2分鐘後的膜厚後,設為百分率來求出顯影後的殘膜率。將顯影後的殘膜率為55%~100%的情況設為A,將40%以上且未滿55%的情況設為B,將0%以上且未滿40%的情況設為C。將結果示於表1及表2。(Measurement of residual film rate after development 1) Using a coating device Act8 (manufactured by Tokyo Electronics Co., Ltd.), the obtained photosensitive resin composition was spin-coated on a silicon wafer, and dried at 100°C for 2 minutes. , dry at 110° C. for 2 minutes to form a photosensitive resin film with a dry film thickness of 7 μm to 15 μm. The development time was set to twice the time until the obtained photosensitive resin film was immersed in cyclopentanone and completely dissolved. In addition, a photosensitive resin film was produced in the same manner as above, and the obtained photosensitive resin film was irradiated with i-rays of 200 mJ/cm 2 using an i-ray stepper FPA-3000iW (manufactured by Canon Co., Ltd.). rays for exposure. Using Act8, the exposed resin film is subjected to liquid development in cyclopentanone for the specified development time, and then rinsed with propylene glycol monomethyl ether acetate (PGMEA) to obtain a resin film. Regarding the film thickness after heating on a hot plate at 110°C for 2 minutes and the film thickness after development, a part of the film was scratched to expose the silicon wafer, and a contact needle profilometer Dektak 150 was used. (manufactured by Bruker) and measure the height from the exposed silicon wafer surface to the film surface (the film thickness is measured in the same manner below). The film thickness after development of 10 μm was divided by the film thickness after heating on a hot plate at 110° C. for 2 minutes, and the remaining film rate after development was calculated as a percentage. The case where the residual film rate after development is 55% to 100% is designated as A, the case where it is 40% or more and less than 55% is designated as B, and the case where the residual film rate after development is 0% or more and less than 40% is designated as C. The results are shown in Table 1 and Table 2.
(硬化物的製造1) 關於實施例1~實施例9,使用垂直式擴散爐μ-TF(光洋熱系統(Koyo Thermo Systems)股份有限公司製造)於氮氣環境下以175℃將顯影後的殘膜率的測定1中所獲得的樹脂膜加熱1小時,獲得硬化物(硬化後膜厚為7 μm~10 μm)。 關於實施例1~實施例9,獲得了良好的硬化物。(Manufacture of hardened materials 1) Regarding Examples 1 to 9, a vertical diffusion furnace μ-TF (manufactured by Koyo Thermo Systems Co., Ltd.) was used to measure the residual film rate after development at 175°C in a nitrogen atmosphere. The obtained resin film is heated for 1 hour to obtain a hardened product (film thickness after hardening is 7 μm to 10 μm). Regarding Examples 1 to 9, good cured products were obtained.
(顯影後的殘膜率的測定2) 使用塗佈裝置Act8,將所述感光性樹脂組成物旋塗於矽晶圓上,於100℃下乾燥2分鐘後,於110℃下乾燥2分鐘而形成乾燥膜厚為7 μm~15 μm的感光性樹脂膜。 將使所獲得的感光性樹脂膜浸漬於環戊酮中並完全溶解為止的時間的兩倍設定為顯影時間。 另外,以與上述相同的方式製作感光性樹脂膜,對於所獲得的感光性樹脂膜,使用h射線帶通濾波器對遮罩對準器MA-8(蘇斯微技術(SUSS MicroTec)公司製造)照射200 mJ/cm2 的h射線來進行曝光。 使用Act8,將曝光後的樹脂膜於環戊酮中以所述顯影時間進行覆液顯影後,利用PGMEA進行淋洗清洗,獲得樹脂膜。 關於在110℃的加熱板上加熱2分鐘後的膜厚以及顯影後的膜厚,與顯影後的殘膜率的測定1同樣地進行測定。 顯影後的膜厚10 μm除以在110℃的加熱板上加熱2分鐘後的膜厚後,設為百分率來求出顯影後的殘膜率。將顯影後的殘膜率為55%~100%的情況設為A,將40%以上且未滿55%的情況設為B,將0%以上且未滿40%的情況設為C。將結果示於表1及表2。(Measurement 2 of the remaining film rate after development) Using the coating device Act8, spin-coat the photosensitive resin composition on the silicon wafer, dry it at 100°C for 2 minutes, and then dry it at 110°C for 2 minutes. A photosensitive resin film with a dry film thickness of 7 μm to 15 μm is formed. The development time was set to twice the time until the obtained photosensitive resin film was immersed in cyclopentanone and completely dissolved. In addition, a photosensitive resin film was produced in the same manner as above, and the obtained photosensitive resin film was subjected to mask aligner MA-8 (manufactured by SUSS MicroTec) using an h-ray bandpass filter. ) for exposure by irradiating h-rays of 200 mJ/ cm2 . Using Act8, the exposed resin film is subjected to liquid development in cyclopentanone for the specified development time, and then rinsed with PGMEA to obtain a resin film. The film thickness after heating on a hot plate at 110° C. for 2 minutes and the film thickness after development were measured in the same manner as in Measurement 1 of the residual film rate after development. The film thickness after development of 10 μm was divided by the film thickness after heating on a hot plate at 110° C. for 2 minutes, and the remaining film rate after development was calculated as a percentage. The case where the residual film rate after development is 55% to 100% is designated as A, the case where it is 40% or more and less than 55% is designated as B, and the case where the residual film rate after development is 0% or more and less than 40% is designated as C. The results are shown in Table 1 and Table 2.
(硬化物的製造2) 關於實施例1~實施例9,使用垂直式擴散爐μ-TF於氮氣環境下以175℃將顯影後的殘膜率的測定2中所獲得的樹脂膜加熱1小時,獲得硬化物(硬化後膜厚為7 μm~10 μm)。 關於實施例1~實施例9,獲得了良好的硬化物。(Manufacture of hardened material 2) Regarding Examples 1 to 9, the resin film obtained in Measurement 2 of the residual film ratio after development was heated at 175° C. for 1 hour using a vertical diffusion furnace μ-TF in a nitrogen atmosphere to obtain a cured product (after curing Film thickness is 7 μm ~ 10 μm). Regarding Examples 1 to 9, good cured products were obtained.
(圖案化評價) 使用塗佈裝置Act8,將所述感光性樹脂組成物旋塗於矽晶圓上,於100℃下乾燥2分鐘後,於110℃下乾燥2分鐘而形成乾燥膜厚為7 μm~15 μm的感光性樹脂膜。 將使所獲得的感光性樹脂膜浸漬於環戊酮中並完全溶解為止的時間的兩倍設定為顯影時間。 另外,以與上述相同的方式製作感光性樹脂膜,對於所獲得的感光性樹脂膜,使用h射線帶通濾波器對遮罩對準器MA-8(蘇斯微技術(SUSS MicroTec)公司製造)以規定的圖案(10 μm的線與空間圖案(line and space pattern))照射500 mJ/cm2 的h射線來進行曝光。 使用Act8,將曝光後的樹脂膜於環戊酮中以所述顯影時間進行覆液顯影後,利用PGMEA進行淋洗清洗,獲得圖案樹脂膜。 藉由光學顯微鏡觀察所獲得的圖案樹脂膜,將線圖案中無剝離的情況設為A,將線圖案即使有一根剝離的情況設為B,將無法圖案化的情況設為C。將結果示於表1及表2。(Patterning evaluation) Using the coating device Act8, the photosensitive resin composition was spin-coated on the silicon wafer, dried at 100°C for 2 minutes, and then dried at 110°C for 2 minutes to form a dry film thickness of 7 μm~15 μm photosensitive resin film. The development time was set to twice the time until the obtained photosensitive resin film was immersed in cyclopentanone and completely dissolved. In addition, a photosensitive resin film was produced in the same manner as above, and the obtained photosensitive resin film was subjected to mask aligner MA-8 (manufactured by SUSS MicroTec) using an h-ray bandpass filter. ) Expose by irradiating h-rays of 500 mJ/cm 2 in a prescribed pattern (10 μm line and space pattern). Using Act8, the exposed resin film is subjected to liquid development in cyclopentanone for the specified development time, and then rinsed with PGMEA to obtain a patterned resin film. The obtained patterned resin film was observed with an optical microscope, and the case where there was no peeling in the line pattern was designated as A, the case where even one line pattern was peeled off was designated as B, and the case where patterning could not be performed was designated as C. The results are shown in Table 1 and Table 2.
(圖案硬化物的製造) 使用垂直式擴散爐μ-TF於氮氣環境下以175℃將所獲得的樹脂膜加熱1小時,獲得圖案硬化物(硬化後膜厚為10 μm)。 關於實施例1~實施例9,獲得了良好的硬化物。(Manufacturing of patterned hardened materials) The obtained resin film was heated at 175°C for 1 hour using a vertical diffusion furnace μ-TF in a nitrogen atmosphere to obtain a patterned hardened product (film thickness after hardening: 10 μm). Regarding Examples 1 to 9, good cured products were obtained.
[表1]
[表2]
本發明的感光性樹脂組成物可用於層間絕緣膜、覆蓋塗層或表面保護膜等,本發明的層間絕緣膜、覆蓋塗層或表面保護膜可用於電子零件等。The photosensitive resin composition of the present invention can be used for interlayer insulating films, cover coatings, surface protective films, etc., and the interlayer insulating films, cover coatings, or surface protective films of the present invention can be used for electronic components, etc.
於上述中對本發明的若干實施形態及/或實施例進行了詳細說明,但本領域技術人員容易於實質上不偏離本發明的新穎教示及效果的情況下,對該些作為例示的實施形態及/或實施例加以多種變更。因而,該些多種變更包含於本發明的範圍內。 引用該說明書中記載的文獻及成為本申請案基於巴黎條約的優先權的基礎的申請的全部內容。Several embodiments and/or examples of the present invention have been described in detail above, but those skilled in the art can easily modify these illustrative embodiments and/or examples without substantially departing from the novel teachings and effects of the present invention. /Or the embodiment may be modified in various ways. Therefore, these various modifications are included in the scope of the present invention. The entire contents of the documents described in this specification and the applications that serve as the basis for the priority of the present application under the Paris Treaty are cited.
1:半導體基板 2:保護膜 3:第一導體層 4:層間絕緣膜 5:感光性樹脂層 6A、6B、6C:窗 7:第二導體層 8:表面保護膜1:Semiconductor substrate 2: Protective film 3: First conductor layer 4: Interlayer insulation film 5: Photosensitive resin layer 6A, 6B, 6C: Window 7: Second conductor layer 8:Surface protective film
圖1為本發明一實施形態的電子零件的製造步驟圖。FIG. 1 is a diagram showing the manufacturing steps of an electronic component according to an embodiment of the present invention.
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