TWI799272B - Method for preparing a semiconductor device structure including overlay mark structure - Google Patents

Abstract

A method for manufacturing a semiconductor device structure is provided. The method includes providing a substrate; providing a first light-emitting feature on the substrate, wherein the first light-emitting feature is utilized to emit a fluorescence comprising a first wavelength; providing an overlay mark structure on the first light-emitting feature, wherein the overlay mark structure is configured to absorb or reflect the fluorescence emitted from the first light-emitting feature; and providing a first conductive feature at least laterally overlapping the overlay mark structure.

Description

Method for preparing semiconductor element structure with superimposed marking structure

This application claims priority to US Patent Application Nos. 17/683,474 and 17/683,845 (ie, the priority date is "March 1, 2022"), the contents of which are incorporated herein by reference in their entirety.

The disclosure relates to a semiconductor device structure. In particular it relates to a semiconductor component structure with superimposed marking structures.

With the development of the semiconductor industry, it becomes more important to reduce the overlay error of the photoresist pattern and the underlying pattern in the lithography operation. Due to various factors, such as the unclear optical image between a current layer and a pre-layer of the superimposed mark structure, it is more and more difficult to measure the overlay error correctly, so a new semiconductor element structure and the preparation of the semiconductor element structure are developed method to more accurately measure overlay error.

The above "prior art" description is only to provide background technology, and does not acknowledge that the above "prior art" description discloses the subject of this disclosure, and does not constitute the prior art of this disclosure, and any description of the above "prior art" shall not form part of this case.

One aspect of the present disclosure provides a semiconductor device structure. The semiconductor element The component structure includes a base, a first conductive feature, a first light emitting feature, a first pattern, and a second pattern. The first light emitting feature is disposed on the base. The first pattern is disposed on the first light emitting feature. The second pattern is disposed on the first pattern. The first conductive feature at least laterally overlaps the first pattern. The first light emitting feature is configured to emit a light comprising a first wavelength. The first pattern has a first transmittance to the light of the first wavelength. The second pattern has a second transmittance to the light of the first wavelength. The first transmittance is different from the second transmittance.

Another aspect of the disclosure provides a semiconductor device structure. The semiconductor device structure includes a substrate, a first light-emitting feature, an overlay mark structure, and a first conductive feature. The first light emitting feature is disposed on the base. The first light emitting feature includes metal ions for emitting a fluorescent light including a first wavelength. The overlay marking structure is disposed on the first light emitting feature. The overlay marking structure is configured to absorb and/or reflect the fluorescent light emitted from the first light emitting feature. The first conductive feature overlaps at least a side of the overlying marking structure.

Another aspect of the disclosure provides a method for fabricating a semiconductor device structure. The preparation method includes: providing a substrate; forming a first light-emitting feature on the substrate; forming a first pattern on the first light-emitting feature; forming a first conductive feature laterally overlapping the first pattern; A second pattern is formed on the first pattern, wherein the first light emitting feature is configured to emit a light comprising a first wavelength, and the first pattern has a first transmittance to the light comprising the first wavelength , the second pattern has a second transmittance to the light including the first wavelength, and the first transmittance is different from the second transmittance.

Embodiments of the disclosure provide a semiconductor device structure including light emitting features. The light emitting feature can be configured to fluoresce. Fluorescence can improve the contrast between the current layer and the pre-layer of the superimposed marking structure in the optical image. Therefore, based on the above optical images, it is possible to more accurately Calculate the overlay error.

The technical features and advantages of the present disclosure have been broadly summarized above, so that the following detailed description of the present disclosure can be better understood. Other technical features and advantages constituting the subject matter of the claims of the present disclosure will be described below. Those skilled in the art of the present disclosure should understand that the concepts and specific embodiments disclosed below can be easily used to modify or design other structures or processes to achieve the same purpose as the present disclosure. Those with ordinary knowledge in the technical field to which the disclosure belongs should also understand that such equivalent constructions cannot depart from the spirit and scope of the disclosure defined by the appended claims.

10:Wafer

21:Overlapping markup structure

22:Overlapping markup structure

30: Cutting Road

40: Wafer

50a: Semiconductor device structure

50b: Semiconductor device structure

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100s1: Surface

100s2: Surface

110a: Overlapping markup structure

110b: Overlapping markup structure

111: pattern

112: pattern

120: Luminous features

130: intermediate structure

140: mask

150: Luminous features

200a: Optical image

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200d: optical image

211: Contour

211': Contour

221: Contour

222: Contour

223: Contour

224: Contour

230: Contour

230': Contour

300: Semiconductor preparation system

320-1, ..., and 320-N: Manufacturing equipment

330: Manufacturing equipment

340-1, ..., and 340-N: Manufacturing equipment

350: Exposure equipment

360: Stacking Measurement Devices

370: Overlay Correction System

380: Network

390:Controller

400: Preparation method

410: Operation

420: Operation

430: Operation

440: Operation

450: Operation

460: Operation

470: Operation

480: Operation

500a: Semiconductor device structure

500b: Semiconductor Component Structure

500c: Semiconductor Component Structure

500d: Semiconductor Component Structure

502: base

504: metallization layer

506: bottom layer

508: photosensitive layer

510: Luminescent material

510a: Luminous features

510b: Luminous features

510c: Luminous features

512: dielectric layer

514: dielectric layer

516: mask

518: Conductive features

520: pattern

522: bottom layer

524: photosensitive layer

526a: Luminous features

526b: Luminous features

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530: mask

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600: Semiconductor Manufacturing System

601: hardware processor

603: Non-transitory computer-readable storage media

605: busbar

607: Input and output (I/O) interface

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610: user interface

A1: Projection area

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F1: light (or fluorescent)

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LE1: metal ion

LE2: metal ion

O1: Open

O2: opening

X: direction

Y: Direction

Z: Direction

The disclosure content of the present application can be understood more comprehensively when referring to the embodiments and the patent scope of the application for combined consideration of the drawings, and the same reference numerals in the drawings refer to the same components.

FIG. 1 is a top view illustrating a wafer according to some embodiments of the present disclosure.

FIG. 2 is an enlarged top view of the dashed area in FIG. 1 , illustrating some embodiments of the present disclosure.

FIG. 3 is a top view illustrating the semiconductor device structure of some embodiments of the present disclosure.

FIG. 4A is a cross-sectional view along line AA' of FIG. 3 , illustrating some embodiments of the present disclosure.

FIG. 4B illustrates the light emitting mechanism of the light emitting feature.

FIG. 5 is a top view illustrating the semiconductor device structure of some embodiments of the present disclosure.

FIG. 6A is an optical image illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 6B is an optical image illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 7A is a cross-sectional view illustrating the semiconductor device structure of some embodiments of the present disclosure.

FIG. 7B illustrates the light emitting mechanism of the light emitting feature.

FIG. 8 is an optical image illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 9 is an optical image illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 10 is a block diagram illustrating a semiconductor manufacturing system according to some embodiments of the present disclosure.

FIG. 11 is a flowchart illustrating a method of fabricating a semiconductor device structure according to various aspects of the present disclosure.

12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12I, 12J, 12K, 12L, 12M, 12N, 12O, and 12P are examples The present disclosure discloses one or more stages of a method for fabricating a semiconductor device structure in some embodiments.

FIG. 13 is a cross-sectional view illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 14 is a cross-sectional view illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 15 is a cross-sectional view illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

FIG. 16 is a diagram illustrating hardware of a semiconductor fabrication system of various aspects of the present disclosure.

Embodiments, or examples, of the present disclosure illustrated in the drawings will now be described in specific language. It should be understood that no limitation of the scope of the present disclosure is intended herein. Any changes or modifications to the described embodiments, and any further applications of the principles described herein, are considered to be within the ordinary skill of the art to which this disclosure pertains. Reference numbers may be repeated throughout the embodiments, but this does not necessarily mean that features of one embodiment apply to another, even if they share the same reference number.

It will be understood that although the terms first, second, third etc. may be used to describe various elements, components, regions, layers or sections, these elements, components, regions, layers or sections should not be limited by these terms. Rather, these terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, or layers or parts without departing from the teachings of the inventive concepts.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive concepts. As used herein, the singular forms "a", "an" and "the" also include plural forms unless the context clearly dictates otherwise. It should be understood that the words "comprises" and "comprises", when used in this specification, indicate the presence of the stated features, integers, steps, operations, elements or components, but do not exclude the presence or addition of one or more other A feature, integer, step, operation, element, component, or group thereof.

Referring to FIG. 1 and FIG. 2 , FIG. 1 is a top view illustrating a wafer 10 according to various aspects of the present disclosure, and FIG. 2 is an enlarged top view of the dotted line area in FIG. 1 .

As shown in FIGS. 1 and 2 , the wafer 10 is diced into a plurality of wafers 40 along the dicing line 30 . Each die 40 may include semiconductor elements, which may include active and/or passive elements. Active components may include a memory chip (for example, a dynamic random access memory (DRAM) chip, a static random access memory (SRAM) chip, etc.); a power management chip (for example, a power management integrated circuit (PMIC) chip); a logic chip (e.g., system chip (SoC), central processing unit (CPU), graphics processing unit (GPU), application processor (AP), microcontroller, etc.); a radio frequency (RF) chip; a A sensor chip; a microelectromechanical system (MEMS) chip; a signal processing chip (such as a digital signal processing (DSP) chip); a front-end chip (such as an analog front-end (AFE) chip) or other active components. Passive components may include a capacitor, a resistor, an inductor, a fuse or other passive components.

As shown in FIG. 2 , overlay marking structures 21 and 22 may be disposed on the wafer 10 . In some embodiments, the overlay marking structures 21 or 22 may be located on the dicing line 30 . Overlay marking structures 21 or 22 may be provided at the corners of the edge of each wafer 40 . In some embodiments, overlay marking structures 21 or 22 may be located inside wafer 40 . In some embodiments, it is possible to use The mark structure 21 is superimposed to measure whether a current layer, such as an opening of a photoresist layer, is accurately aligned with a pre-layer in semiconductor manufacturing. In some embodiments, the overlay mark structure 21 or 22 can be used to generate an overlay error between a current layer (or upper layer) and a pre-layer (or lower layer).

FIG. 3 is a top view illustrating a semiconductor device structure 50 a according to various aspects of the present disclosure.

As shown in FIG. 3 , a semiconductor device structure 50 a , such as a wafer, may include an overlying marking structure 110 a on a substrate 100 . In some embodiments, the overlay marking structure 21 shown in FIG. 2 may include similar or identical patterns or structures as the overlay marking structure 110 a shown in FIG. 3 . In some embodiments, the overlay marking structure 22 shown in FIG. 2 may include similar or identical patterns or structures as the overlay marking structure 110 a shown in FIG. 3 .

The substrate 100 may be a semiconductor substrate, such as a bulk semiconductor, a semiconductor-on-insulator (SOI) substrate, or the like. Substrate 100 may include an elemental semiconductor, including silicon or germanium in a single crystal form, a polycrystalline form, or an amorphous form; a compound semiconductor material, including silicon carbide, gallium arsenide, gallium phosphide, phosphide At least one of indium, indium arsenide, and indium antimonide; an alloy semiconductor material including at least one of SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP, and GaInAsP; any other suitable material; or a combination thereof. In some embodiments, the alloyed semiconductor substrate may be a SiGe alloy with a graded Ge feature, wherein the composition of Si and Ge changes from a ratio at one location of the graded SiGe feature to another location. In another embodiment, a SiGe alloy is formed on a silicon substrate. In some embodiments, the SiGe alloy may be mechanically strained by another material in contact with the SiGe alloy. In some embodiments, the substrate 100 may have a multilayer structure, or the substrate 100 may include a multilayer compound semiconductor structure.

In some embodiments, according to various aspects of the present disclosure, stacking The marking structure 110 a is aligned with different layers on the substrate 100 . The overlay marking structure 110 a may include patterns 111 and 112 on the substrate 100 . The pattern 111 may be a pre-layer pattern. The pattern 112 may be a pattern of a current layer. The pre-level (or lower level) may be at a different level than the current level (or upper level). The pre-level (or lower level) may be located at a lower level than the current level (or upper level). In some embodiments, the pattern 111 may at least partially overlap the pattern 112 along the Z direction.

When measuring an overlay error using an overlay mark structure, such as the overlay mark structure 110a, the X-direction deviation is measured along a line in the X-direction of the overlay mark structure 110a. The Y-direction deviation is further measured along a straight line in the Y-direction of the overlay marking structure 110a. A single overlay mark structure, including patterns 111 and 112, can be used to measure the X-direction and Y-direction deviation between two layers on a substrate. Therefore, it can be determined whether the current layer and the pre-layer are accurately aligned according to the deviation in the X- and Y-directions. Overlay errors may include deviations in the X-direction (ΔX), deviations in the Y-direction (ΔY), or a combination of both.

FIG. 4A is a cross-sectional view along line AA' of FIG. 3 , illustrating some embodiments of the present disclosure. In some embodiments, the semiconductor device structure 50 a may further include a light emitting feature 120 , an intermediate structure 130 and a mask 140 .

As shown in FIG. 4A , the substrate 100 may have a surface 100s1 and a surface 100s2 opposite to the surface 100s1 . The surface 100s2 of the substrate 100 may be an active surface on which input/output terminals are disposed. The surface 100s1 of the substrate 100 may be a back surface.

In some embodiments, the light emitting feature 120 may be disposed on the surface 100s2 of the substrate 100 . In some embodiments, the light emitting feature 120 can be used to emit light having a first wavelength band. In some embodiments, the light emitting feature 120 can be used to emit fluorescent light having a first wavelength band. In some embodiments, light emitting feature 120 may include a dielectric layer and a light emitting material therein. For example, after a light with a specific wavelength is incident on the light emitting feature 120, the light emitting material Can absorb light and be excited. The excited luminescent material can emit light with the first wavelength band. It should be noted that, in other embodiments, the light (or fluorescence) emitted by the light-emitting feature may be a specific wavelength of light.

The wavelength of light that induces fluorescence may depend on the light emitting material of the light emitting feature 120 . In some embodiments, the first wavelength band (or wavelength) may range from about 100 nm to about 1000 nm, such as 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm Nano, 700nm, 800nm, 900nm or 1000nm. For example, the wavelength of light emitted from light emitting feature 120 may include a wavelength band ranging from about 300 nanometers to about 500 nanometers. In another example, the wavelength of the light emitted from the light emitting feature 120 may be 617 nm.

The dielectric layer of the light emitting feature 120 may include silicon oxide (SiOx), silicon nitride (SixNy), silicon oxynitride (SiON), or other suitable materials.

In some embodiments, the luminescent material of luminescent feature 120 may include metal ions of transition metals, such as europium (Eu), tungsten (Tm), galvanium (Pr), neodymium (Nd), samarium (Sm), cerium (Tb) Dysprosium (Dy), Ho (Ho), Erbium (Er), Ytterbium (Yb), Cerium (Ce) , uranium (U), uranium (Np), 鈈(Pu), 鋂 (Am), 鋦 (Cm), beryllium (Bk), 鉲 (Cf), 鎄 (Es), 镄 (Fm), mendelenium (Md) , 鍩 (No), 鐒 (Lr), combinations thereof or other suitable metals.

In some embodiments, the light emitting material of the light emitting feature 120 may include an organic material, such as a compound or a polymer including an aromatic group. For example, the luminescent material of luminescent feature 120 may include a material selected from the group consisting of benzene, naphthalene, pyridine, pyrimidine, triazine, thiophene, isothiazole, triazole, pyridazine, pyrrole, pyrazole, imidazole, thiadiazole, pyrazine, furan, Isoxazole, oxazole, oxadiazole, quinoline, isoquinoline, quinoxaline, quinazoline, thiadiazole, benzotriazine, phthalazine, tetrazole, Indole, benzofuran, benzothiophene, benzoxazole, benzothiazole, indazole, benzimidazole, benzotriazole, benzisothiazole, benzothiadiazole, dibenzofuran, diphenyl Functional groups of thiophene, dibenzoselenophene, carbazole or other suitable functional groups.

In some embodiments, the emissive material of emissive feature 120 may include a semiconductor material. In some embodiments, the light-emitting material of the light-emitting feature 120 may include a homojunction, a heterojunction, a single quantum well (SQW), a multiple quantum well (MQW), or any other suitable structure. In some embodiments, the light emitting material may include In _x Ga _(1-x )N, Al _x In _y Ga _(1-xy) N or other suitable materials.

In some embodiments, pattern 111 may be disposed on light emitting feature 120 . In some embodiments, pattern 111 may vertically overlap light emitting features 120 . In some embodiments, pattern 111 may overlap light emitting feature 120 along the Z direction. The pattern 111 may be disposed in or under the intermediate structure 130 . In some embodiments, the pattern 111 may include the same material as an isolation structure. In some embodiments, the pattern 111 may be disposed at the same elevation as the isolation structure. Isolation structures may include, for example, a shallow trench isolation (STI), field oxide (FOX), an area oxide of silicon (LOCOS) feature, and/or other suitable isolation elements. The isolation structure may include a dielectric material such as silicon oxide, silicon nitride, silicon oxynitride, fluorine-doped silicate (FSG), a low-k (dielectric constant) dielectric material, combinations thereof, and/or other suitable Material.

In some embodiments, the pattern 111 may include the same material as a gate structure. The gate structure can be sacrificial, eg, a dummy gate structure. In some embodiments, the pattern 111 may be disposed at the same elevation as the gate structure. In some embodiments, the pattern 111 may include a dielectric layer and a conductive layer, the material of the dielectric layer is the same as that of a gate dielectric layer, and the material of the conductive layer is the same as that of a gate electrode layer.

In some embodiments, the gate dielectric layer may include silicon oxide (SiO _x ), silicon nitride ( _Six N _y ), silicon oxynitride (SiON), or a combination thereof. In some embodiments, the gate dielectric layer may include a dielectric material, such as a high-k dielectric material. High-k dielectric materials may have a dielectric constant (k value) greater than 4. High-k dielectric materials may include hafnium oxide (HfO ₂ ), zirconium oxide (ZrO ₂ ), lanthanum oxide (La ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ) or other suitable materials. Other suitable materials are also contemplated for this disclosure.

In some embodiments, the gate electrode layer may include a polysilicon layer. In some embodiments, the gate electrode layer may comprise conductive materials such as aluminum (Al), copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta) or other suitable materials. In some embodiments, the pole electrode layer may include a work function layer. The work function layer includes a metal material, and the metal material may include a metal with N-work function or a metal with P-work function. N-work function metals include tungsten (W), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalum carbide (TaC ), tantalum carbon nitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr) or combinations thereof. P-work function metals include titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), ruthenium (Ru), or combinations thereof. Other suitable materials are also contemplated for this disclosure. Fabrication techniques of the gate electrode layer may include low pressure chemical vapor deposition (LPCVD) and plasma enhanced CVD (PECVD).

In some embodiments, the pattern 111 may include the same material as a conductive via that may be disposed on a conductive trace, such as a metal zero layer (M0), a first metal layer (M1), a second metal layer ( M2) etc. In this embodiment, the pattern 111 may include a barrier layer and a conductive layer surrounded by the barrier layer. The barrier layer may include metal nitride or other suitable materials. The conductive layer may include metals such as W, Ta, Ti, Ni, Co, Hf, Ru, Zr, Zn, Fe, Sn, Al, Cu, Ag, Mo, Cr, alloys or other suitable materials. In this embodiment, the fabrication technique of pattern 111 may include suitable deposition process, for example, sputtering and physical vapor deposition product (PVD).

The intermediate structure 130 may include one or more intermediate layers including insulating materials, such as silicon oxide or silicon nitride. In some embodiments, the intermediate structure 130 may include a conductive layer, such as a metal layer or an alloy layer.

The pattern 112 is disposed on the intermediate structure 130 . The pattern 112 may be disposed on or over the surface 100s2 of the substrate 100 . In some embodiments, pattern 112 may at least vertically overlap pattern 111 . In some embodiments, pattern 112 may overlap pattern 111 at least along the Z direction. In some embodiments, pattern 112 may at least vertically overlap light emitting features 120 . In some embodiments, the pattern 112 can overlap the light emitting features 120 at least along the Z direction. In some embodiments, pattern 112 may be a plurality of openings defined by mask 140 . A mask 140 may be formed on the intermediate structure 130 and will be removed in a subsequent process. Mask 140 may include a positive or negative photoresist, such as polymer, or a hard mask, such as silicon nitride or silicon oxynitride. The current layer including the mask 140 and the pattern 112 can be patterned using a suitable lithography process, for example, forming a photoresist layer on the intermediate structure 130, exposing the photoresist layer to a pattern through a photomask, The photoresist is baked and developed to form the mask 140 and the pattern 112 . A mask 140 may then be used to define a pattern into the intermediate structure 130 so that the portion of the intermediate structure 130 exposed from the photoresist layer may be removed.

In some embodiments, the overlay marking structure 110a may be configured to absorb and/or reflect light (or fluoresce) emitted from the light emitting feature 120 . In some embodiments, pattern 111 may be configured to absorb and/or reflect light (or fluorescence) emitted from light emitting features 120 . The pattern 111 may have a first transmittance for a first band (or wavelength) of light (or fluorescence) emitted by the light emitting feature 120 . The pattern 112 may have a second transmittance for the first wavelength band (or wavelength) of light (or fluorescence) emitted by the light emitting feature 120 . In some embodiments, the first transmittance and the second transmittance The emissivity is different. In some embodiments, the first transmittance is less than the second transmittance. In some embodiments, the first transmittance may be less than 30%, such as 30%, 20%, 15%, 10%, 7%, 5%, 3%, 1%, or even less. A larger transmittance difference between the patterns 111 and 112 may help the overlay measurement device to recognize the patterns 111 and 112 of an optical image. In this embodiment, the light (or fluorescence) emitted by the light emitting feature 120 can improve the contrast between the patterns 111 and 112 of the optical image. For example, the outlines of the patterns 111 and 112 in the optical image can be clearly identified by the sensors of the overlay measurement device. Therefore, the overlay error can be calculated more accurately.

FIG. 4B illustrates a light emitting mechanism of the light emitting feature 120 .

In some embodiments, light emitting feature 120 may include metal ion LE1 therein. In some embodiments, when the metal ion LE1 receives the light L1, the light emitting feature 120 may emit light (or fluorescence) F1. In some embodiments, the first transmittance of the pattern 111 to the light (or fluorescent light) F1 and the second transmittance of the pattern 112 to the light (or fluorescent light) F1 are different.

FIG. 5 is a top view illustrating a semiconductor device structure 50b according to some embodiments of the present disclosure. The semiconductor device structure 50b shown in FIG. 5 may be similar to the semiconductor device structure 50a shown in FIG. 3, except that the semiconductor device structure 50b may include an overlay marking structure 110b instead of the overlay marking structure 110a.

As shown in FIG. 5 , the overlay marking structure 110 b may include a plurality of patterns 111 and 112 . Each pattern 111 or 112 may be located in one of four orthogonal destination areas, two of which are configured to measure overlay error in the X-direction and two configured to measure overlay error in the Y-direction.

FIG. 6A is an optical image 200a illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

In some embodiments, optical image 200a may include 211 and 230 . contour 211 may correspond to an image of pattern 111 . Outline 230 may correspond to an image of intermediate structure 130 . In some embodiments, the intermediate structure 130 may have a third transmittance for the first wavelength band (or wavelength) of light (or fluorescence) emitted by the light emitting feature 120 . In some embodiments, the first transmittance is different from the third transmittance. In some embodiments, the first transmittance is less than the third transmittance. As shown in FIG. 6A , in the optical image 200 a, the brightness of the contour 230 may exceed the brightness of the contour 211 .

FIG. 6B is an optical image 200b illustrating the semiconductor device structure of some embodiments of the present disclosure.

In some embodiments, optical image 200b may include outlines 211' and 230'. Outline 211 ′ may correspond to an image of pattern 111 . Outline 230 ′ may correspond to an image of intermediate structure 130 . In some embodiments, the first transmittance may exceed the third transmittance. As shown in FIG. 6B, in the optical image 200b, the brightness of the contour 211' may exceed the brightness of the contour 230'.

In this embodiment, the contrast between the pattern 111 and the intermediate structure 130 of the optical image (eg 200a or 200b ) can be improved, which helps to identify the outline of the pattern 111 . Therefore, the overlay error can be calculated more accurately.

Likewise, the contrast between the pattern 112 and the intermediate structure 130 can also be controlled or modified. In some embodiments, the second transmittance may be less than the third transmittance. In some embodiments, the second transmittance may exceed the third transmittance. In some embodiments, the third transmittance may be within the range of the first transmittance and the second transmittance. By adjusting the relationship among the first transmittance, the second transmittance and the third transmittance, the overlay error can be calculated more accurately.

FIG. 7A is a cross-sectional view illustrating a semiconductor device structure 50c according to various aspects of the present disclosure. The semiconductor device structure 50c shown in FIG. 7A may be similar to the semiconductor device structure 50a shown in FIG. 4A , except that the semiconductor device structure 50c may further include light emitting features 150 .

In some embodiments, light emitting features 150 may be disposed below pattern 112 . In some embodiments, the light emitting feature 150 may be disposed between the patterns 111 and 112 . In some embodiments, the light emitting feature 150 may be disposed between the intermediate structure 130 and the pattern 112 . In some embodiments, light emitting features 150 may be embedded in intermediate structure 130 . In some embodiments, pattern 112 may vertically overlap light emitting features 150 . In some embodiments, pattern 112 may overlap light emitting feature 150 along the Z direction. In some embodiments, the light emitting feature 150 can be used to emit light having a second wavelength band (or wavelength) different from the first wavelength band (or wavelength). In some embodiments, the light emitting feature 150 can be used to emit fluorescent light having a second wavelength band (or wavelength). In some embodiments, the light emitting feature 150 may include a dielectric layer and a light emitting material doped therein. For example, after a light having a specific wavelength is incident on the light-emitting feature 150, the light-emitting material may absorb the light and be excited. The excited luminescent material can emit light with a second wavelength band (or wavelength).

The wavelength of the light that induces fluorescence may depend on the light emitting material of the light emitting feature 150 . In some embodiments, the second wavelength band (or wavelength) may range from about 100 nm to about 1000 nm, such as 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm Nano, 700nm, 800nm, 900nm or 1000nm.

The dielectric layer of the light emitting feature 150 may include silicon oxide (SiO _x ), silicon nitride ( _Six N _y ), oxynitride (SiON), or other suitable materials.

In some embodiments, the light-emitting material of the light-emitting feature 150 may include metal ions of transition metals, such as Eu, Tm, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb, Ce, Pm, Gd, Lu, Th , Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr or other suitable metals. In some embodiments, the light-emitting material of light-emitting feature 150 may comprise an organic material, such as a compound or a polymer comprising an aromatic group. things. In some embodiments, the emissive material of emissive feature 150 may include a semiconductor material. In some embodiments, the luminescent material of luminescent feature 150 may include a homointerface, a heterointerface, a single quantum well (SQW), a multiple quantum well (MQW), or any other suitable structure.

In some embodiments, the overlay marking structure 110a may be configured to absorb and/or reflect light (or fluoresce) emitted from the light emitting feature 150 . In some embodiments, pattern 112 may be configured to absorb and/or reflect light (or fluorescence) emitted from light emitting features 150 . The pattern 112 may have a fourth transmittance for the second wavelength band (or wavelength) of the light (or fluorescent light) emitted by the light emitting feature 150 . In some embodiments, the fourth transmittance is different from the first transmittance. In some embodiments, the fourth transmittance is different from the second transmittance. In some embodiments, the fourth transmittance is less than the second transmittance. In some embodiments, the fourth transmittance is different from the third transmittance. In some embodiments, the fourth transmittance is less than the third transmittance. In some embodiments, the fourth transmittance may be less than 30%, such as 30%, 20%, 15%, 10%, 7%, 5%, 3%, 1%, or less. The light (or fluorescence) emitted by the light emitting features 150 can improve the contrast of the patterns 111 , 112 and/or the intermediate structure 130 . Therefore, the overlay error can be calculated more accurately.

FIG. 7B illustrates a light emitting mechanism of the light emitting feature 150 .

In some embodiments, light emitting feature 150 may include metal ion LE2 therein. In some embodiments, when the metal ion LE2 receives the light L2, the light emitting feature 150 may emit light (or fluorescence) F2. In some embodiments, the third transmittance of the pattern 112 to the light (or fluorescent light) F2 is different from the second transmittance of the pattern 112 to the light (or fluorescent light) F1 (as shown in FIG. 4B ). In some embodiments, the wavelength of the light L1 may be different from the wavelength of the light L2. In some embodiments, the wavelength of light (or fluorescent light) F1 may be different from the wavelength of light (or fluorescent light) F2. In some embodiments, metal ion LE1 may be different from metal ion LE2.

FIG. 8 is an optical diagram illustrating the structure of a semiconductor device according to some embodiments of the present disclosure. Image 200c.

In this embodiment, the overlay error between the patterns 111 and 112 is not equal to zero. That is, the patterns 111 and 112 are offset along the X-direction, the Y-direction, or a combination thereof. In some embodiments, optical image 200c may include contours 221 , 222 , 223 and 224 . Outline 221 may correspond to an image of a region in which no patterns 111 and 112 are disposed on intermediate structure 130 . Outline 222 may correspond to an image of a region where pattern 112 does not overlap pattern 111 in the vertical direction. Outline 223 may correspond to an image of an area where pattern 111 overlaps pattern 112 in a vertical direction. Outline 224 may correspond to an image of a region where pattern 111 does not overlap pattern 112 in the vertical direction.

In some embodiments, the outline 221 may exhibit colors including the first band (or wavelength) and the second band (or wavelength). In some embodiments, outline 222 may exhibit colors that include a first band (or wavelength). In some embodiments, outline 223 may exhibit a lower brightness color than outlines 221 , 222 , or 224 . In some embodiments, outline 224 may exhibit colors that include a second band (or wavelength).

Since the contrast between the pattern 111, the pattern 112, and the overlapping area between the patterns 111 and 112 can be improved in the optical image 200c, the overlay error can be calculated more accurately.

FIG. 9 is an optical image 200d illustrating the structure of a semiconductor device according to some embodiments of the present disclosure.

In this embodiment, the overlay error between patterns 111 and 112 is equal to zero. That is, the pattern 111 is aligned with the pattern 112 along the X-direction and the Y-direction. In some embodiments, optical image 200d may include outline 221 and outline 223 .

By calculating the area of the outline 223, the extent of the overlay error can be determined. Depend on Since the contour 223 can be clearly identified in this embodiment, the overlay error can be calculated more accurately.

FIG. 10 is a block diagram illustrating a semiconductor fabrication system 300 according to some embodiments of the present disclosure.

The semiconductor manufacturing system 300 may include manufacturing equipment 320 - 1 , . . . , and 320 -N, 330 , 340 - 1 , . The overlay correction system 370 may be included in or built into the overlay measurement device 360 . Manufacturing equipment 320 - 1 , . . . , and 320 -N, 330 , 340 - 1 , . In some embodiments, overlay calibration system 370 may be a stand-alone system signal-coupled to overlay measurement device 360 via network 380 .

Fabrication equipment 320-1, . . . , and 320-N may be used to form elements or features, such as light-emitting feature 120 shown in FIG. 4A, between a pre-layer (eg, pattern 111) and a substrate. Each of the manufacturing equipment 320-1, . . . , and 320-N can be used to perform a deposition process, an etching process, a chemical mechanical polishing process, a photoresist coating process, a baking process, an alignment process or other processes.

Fabrication apparatus 330 may be used to form a pattern in a pre-layer, such as pattern 111 shown in FIG. 4A. In some embodiments, fabrication equipment 330 may be used to form an isolation structure, a gate structure, a conductive via, or other layers. The pattern of the pre-layer may include dielectric material, semiconductor material or conductive material.

Fabrication equipment 340-1, . . . , and 340-N may be used to form an intermediate structure, such as intermediate structure 130 shown in FIG. 4A. Each of the fabrication equipment 340-1, . . . , and 340-N can be used to perform a deposition process, an etching process, a chemical mechanical polishing process, a photoresist coating process, a baking process, an alignment process, or other processes.

Exposure apparatus 350 may be used to form a pattern of a current layer, such as pattern 112 shown in FIG. 4A.

In some embodiments, the overlay measurement device 360 can be used to obtain optical images of the patterns of the pre-layer and the current layer, and based on the optical images of the patterns of the pre-layer and the current layer (e.g., patterns 111 and 112) (e.g. , patterns 200a, 200b, 200c or 200d) produce overlay errors.

The overlay correction system 370 may include correction parameters for generating corrected first and second overlay errors. Overlay correction system 370 may include, for example, a computer or a server. In some embodiments, the corrected overlay error can be generated or calculated by program code or programming language. For example, the corrected overlay error may be determined from the overlay error obtained from the overlay measurement device 360 and the correction parameters of the overlay correction system 370 . In some embodiments, the X-direction deviation (ΔX), the Y-direction deviation (ΔY), or a combination of both can be generated from the calibration parameters. Each of the X-direction deviation (ΔX), the Y-direction deviation (ΔY), or a combination of both can be expressed by a formula with the correction parameter as a variable. In some embodiments, the overlay correction system 370 can receive optical image information from the pre-layer pattern and the current layer pattern, and then generate an X-direction deviation (ΔX), a Y-direction deviation (ΔY), or both. A combination of these to compensate for the overlay error obtained from the overlay measurement device 360.

Network 380 may be the Internet or an intranet implementing a network communication protocol (such as Transmission Control Protocol (TCP). Through network 380, each manufacturing facility 320-1, ..., and 320-N, 330, 340 -1, . . . , and 340-N, exposure equipment 350 , and overlay measurement equipment 360 may download or upload work-in-process (WIP) information about wafers or fabrication equipment from the controller 390 .

Controller 390 may include a processor, such as a central processing unit (CPU). In some embodiments, the controller 390 can be used to generate whether according to the first stack error and the second overlay error to adjust the instruction of the exposure equipment 350 .

Although FIG. 10 does not show any other manufacturing equipment preceding manufacturing equipment 320, this illustrative embodiment is not meant to be limiting. In other exemplary embodiments, various manufacturing equipment may be arranged before the manufacturing equipment 320, and may be used to perform various processes according to design requirements.

In the exemplary embodiment, wafer 310 is transferred to fabrication facility 320 to begin a series of different processes. Wafer 310 may be formed with at least one layer of material in various stages of processing. The exemplary embodiment is not intended to limit the wafer 310 process. In other exemplary embodiments, wafer 310 may include various layers, or any stage between initiation and completion of a product, before wafer 310 is transferred to fabrication facility 320 . In an exemplary embodiment, wafer 310 may be sequentially fabricated by fabrication equipment 320-1, . . . , and 320-N, 330, 340-1, . to process.

FIG. 11 is a flowchart illustrating a method of fabricating a semiconductor device structure according to various aspects of the present disclosure.

Fabrication method 400 begins at operation 410, where a substrate is provided. The base may have a first surface and a second surface opposite to the first surface. The first surface may also be referred to as the rear surface. The second surface may also be referred to as the active surface, on which active features are formed, such as gate structures or wires connected to input/output terminals.

Fabrication method 400 continues with operation 420 where a first light emitting feature is formed on the substrate. In some embodiments, the first light emitting feature can include a light emitting material in the dielectric layer. In some embodiments, the luminescent material may include, for example, Eu, Tm, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb, Ce, Pm, Gd, Lu, Th, Pa, U, Np, Pu, Am , Cm, Bk, Cf, Es, Fm, Md, No, Lr or other suitable metal ions. exist In some embodiments, the aforementioned metal ions may be formed in a liquid dielectric material. Liquid dielectric materials, including metal ions, can be formed on the substrate by, for example, spin coating. An annealing process and/or a baking process may be performed to cure the liquid dielectric material, thereby forming the first light emitting feature. In other embodiments, the first light-emitting feature may include organic materials and/or semiconductor materials, and fabrication techniques may include suitable processes. Fabrication techniques for the first light emitting feature may include apparatuses 320 - 1 , . . . , and 320 -N shown in FIG. 10 .

The fabrication method 400 continues with operation 430, wherein a first pattern and a first conductive feature are formed on the second surface of the substrate. The first pattern may include the same material as the first conductive features. In some embodiments, the first conductive feature is a conductive via on a metallization layer (eg, M0, M1, M2, etc.). The fabrication techniques of the first pattern and the first conductive features may include processes, such as CVD, PVD, ALD or other suitable processes. Fabrication techniques for the first pattern and first conductive features may include the apparatus 330 shown in FIG. 10 .

The fabrication method 400 continues with operation 440, wherein an intermediate structure is formed to cover the first pattern and the first conductive feature. The intermediate structure may include one or more intermediate layers comprising an insulating material, such as silicon oxide or silicon nitride. The intermediate structure may include conductive features formed in the dielectric layer. In some embodiments, the fabrication techniques of the intermediate structure may include CVD, PVD, ALD, dry etching, wet etching, CMP, and lithography. Fabrication techniques for the first light emitting feature may include apparatuses 340 - 1 , . . . , and 340 -N shown in FIG. 10 .

Fabrication method 400 continues with operation 450 where a second light emitting feature is formed on the substrate. In some embodiments, the second light emitting feature can include light emitting material in a dielectric layer. In some embodiments, the luminescent material may include metal ions such as Eu, Tm, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb, Ce, Pm, Gd, Lu, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr or other suitable gold belongs to. In some embodiments, the aforementioned metal ion fabrication techniques may be in a liquid dielectric material. Fabrication techniques for liquid dielectric materials (including metal ions) may include, for example, spin coating to form on the intermediate structure. An annealing process and/or a baking process may be performed to cure the liquid dielectric material, thereby forming the second light emitting feature. In other embodiments, the second light-emitting feature may include organic materials and/or semiconductor materials, and fabrication techniques may include appropriate processes. In some embodiments, operation 450 is optional. In some embodiments, operation 450 may be omitted.

Fabrication method 400 continues with operation 460 where a second pattern is formed on the second light emitting feature. In some embodiments, the second pattern may be an opening of a mask (eg, a photoresist layer). In some embodiments, operation 460 may include, for example, forming a photoresist layer on the intermediate structure or on the second light emitting features, exposing the photoresist layer to a pattern of a photomask, baking and developing the photoresist layer to A second pattern is formed. Additionally, the opening defined by the mask can be vertically aligned with the first conductive feature. The fabrication technique of the second pattern may include at least the exposure device 350 shown in FIG. 10 .

Fabrication method 400 continues with operation 470 where an overlay error is generated. Overlay errors may be generated according to the first pattern and the second pattern. In some embodiments, an optical image may be obtained by stacking measurement devices. In some embodiments, an overlay measurement device may include a light source, a light sensor, and a light filter. In some embodiments, a light source may be used to emit light to excite the light-emitting material of the first light-emitting feature, thereby inducing fluorescence. In some embodiments, a light sensor may be used to receive fluorescent light from the first light-emitting feature and/or the second light-emitting feature, thereby generating an optical image. In some embodiments, a filter may be used to select a specific wavelength of light received by the light sensor, thereby improving the contrast of the optical image. Overlay errors can be determined from optical images. In this embodiment, the contrast of the contours of the first pattern, the second pattern, and the intermediate structure can be determined by the fluorescence emitted by the first light-emitting feature and/or the second light-emitting feature. light to improve. Therefore, the overlay error can be calculated more accurately. Overlay errors may be generated by the exposure apparatus 350 shown in FIG. 10 .

Fabrication method 400 continues with operation 480 where a second conductive feature may be formed in vertical alignment with the first conductive feature. In some embodiments, after the overlay error is generated, an etching process is performed to remove the intermediate structure on the first conductive feature, thereby forming an opening exposing the first conductive feature. Next, a conductive material may be deposited to fill the opening and fill the second pattern. Accordingly, the second conductive feature can be formed on the first conductive feature. In some embodiments, the second conductive feature is a conductive via on a metallization layer, such as M1, M2, and so on. The fabrication technique of the second conductive feature may include processes such as CVD, PVD, ALD or other suitable processes.

12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, 12I, 12J, 12K, 12L, 12M, 12N, 12O, and 12P are examples The present disclosure discloses one or more stages of the manufacturing method of the semiconductor device structure 500 a in some embodiments.

Referring to Figure 12A, a substrate 502 may be provided. The substrate 502 may be a semiconductor substrate. In some embodiments, metallization layer 504 may be formed on substrate 502 . In some embodiments, a bottom layer 506 may be formed on the metallization layer 504 . Metallization layer 504 may include metals such as W, Al, Cu, Ti, Ta, alloys thereof, or other suitable materials. Metallization layer 504 may be M0, M1, M2, and so on. The bottom layer 506 may include multiple dielectric layers, some of which may act as an anti-reflective coating (ARC) layer.

Referring to FIG. 12B , a photosensitive layer 508 may be formed on the bottom layer 506 . In some embodiments, the photosensitive layer 508 may include a photoresist, such as a positive or negative photoresist.

Referring to FIG. 12C, an etching process may be performed to remove a portion of the photosensitive layer 508 and bottom layer 506, thereby forming a groove. In some embodiments, the exposed upper surface of the bottom layer 506 may serve as a bottom of the groove. Luminescent material 510 may be formed on photosensitive layer 508 . In some embodiments, the emissive material 510 may fill the grooves defined by the photosensitive layer 508 and the bottom layer 506 . In some embodiments, the light emitting material 510 may include transition metal metal ions doped in a dielectric layer, such as SiO ₂ , SiN, SiON or other suitable materials. The luminescent material 510 can emit fluorescence after the metal ions absorb light of a specific wavelength.

Referring to FIG. 12D, an etching process may be performed to remove part of the light emitting material 510 and the bottom layer 506, and the remaining photosensitive layer 508, thereby forming light emitting features 510a. In some embodiments, the etching process may include, for example, a dry etching process. In some embodiments, a portion of the lateral surface of light emitting feature 510a may be exposed. In some embodiments, a portion of light emitting feature 510a may be embedded in bottom layer 506 .

Referring to FIG. 12E, a dielectric layer 512 may be formed to cover the light emitting feature 510a. In some embodiments, the dielectric layer 512 may cover the top and side surfaces of the light emitting feature 510a. In some embodiments, the dielectric layer 512 may include SiO ₂ , SiN, SiON, or other suitable materials.

Referring to FIG. 12F , a dielectric layer 514 may be formed on the dielectric layer 512 . The dielectric layer 514 can be patterned to form a plurality of openings, some of which vertically overlap the light emitting features 510a. In some embodiments, the dielectric layer 514 may include SiO ₂ , SiN, SiON, or other suitable materials. In some embodiments, the dielectric layers 512 and 514 may have different etch selectivities to etchant (such as HF, H3PO4, or other suitable etchant).

Referring to FIG. 12G, a mask 516 may be formed to fill the opening vertically overlapping the light emitting feature 510a. An etching process may be performed to form the opening O1. The opening O1 can penetrate through the dielectric layers 512 and 514 , and the bottom layer 506 . In some embodiments, the metallization layer 504 may be exposed from the opening O1. In some embodiments, mask 516 may include, for example, a photoresist.

Referring to FIG. 12H, mask 516 can be removed so that the opening vertically overlapping light emitting feature 510a can be exposed. A conductive material may be formed to fill the opening O1 and the opening vertically overlapping the light emitting feature 510a. Accordingly, conductive features 518 and a pattern 520 may be formed. In some embodiments, conductive feature 518 may laterally overlap light emitting feature 510a. In some embodiments, conductive features 518 may laterally overlap pattern 520 . In some embodiments, conductive features 518 may include W, Al, Cu, Ti, Ta, alloys thereof, or other suitable materials. In some embodiments, the pattern 520 may include W, Al, Cu, Ti, Ta, alloys thereof, or other suitable materials. In some embodiments, conductive features 518 may be in contact with metallization layer 504 . In some embodiments, conductive features 518 may be electrically connected to metallization layer 504 .

Referring to FIG. 12I , a bottom layer 522 and a photosensitive layer 524 may be formed to cover the conductive features 518 and the pattern 520 . The bottom layer 522 may include multiple dielectric layers, some of which may function as an ARC layer. The photosensitive layer 524 may include, for example, a photoresist.

Referring to FIG. 12J, an etching process may be performed to remove a portion of the bottom layer 522 and the photosensitive layer 524, thereby forming a groove vertically aligned with the pattern 520 and the light emitting feature 510a. In some embodiments, the exposed upper surface of the bottom layer 522 may serve as the bottom of the groove. In some embodiments, the luminescent material 526 can fill the grooves defined by the bottom layer 522 and the photosensitive layer 524 . In some embodiments, the light emitting material 526 may include metal ions of transition metals doped in the dielectric layer, such as SiO ₂ , SiN, SiON, or other suitable materials. The luminescent material 526 can emit fluorescence after the metal ions absorb light of a specific wavelength. In some embodiments, the wavelength of fluorescent light emitted by the luminescent material 526 may be different from that emitted by the luminescent material 510 .

Referring to FIG. 12K, an etching process may be performed to remove part of the light emitting material 526 and the bottom layer 522, as well as the remaining photosensitive layer 524, thereby forming light emitting features 526a. In some embodiments, the etching process may include, for example, a dry etching process. In some embodiments, send A portion of the lateral surface of light feature 526a may be exposed. In some embodiments, a portion of light emitting feature 526a may be embedded in bottom layer 522 . In some embodiments, light emitting feature 526a may vertically overlap light emitting feature 510a. In some embodiments, light emitting features 526a may vertically overlap pattern 520 . In some embodiments, light emitting feature 526a may not laterally overlap conductive feature 518 .

Referring to FIG. 12L , a dielectric layer 528 may be formed on the dielectric layer 512 . In some embodiments, dielectric layer 528 may include SiO ₂ , SiN, SiON, or other suitable materials. In some embodiments, the dielectric layer 528 may cover the top and side surfaces of the light emitting features 526a.

Referring to FIG. 12M , a mask 530 may be formed to cover the dielectric layer 528 . Mask 530 may include, for example, a photoresist.

Referring to FIG. 12N, an etching process may be performed to remove a portion of the mask 530, thereby forming a pattern 532. Referring to FIG. In some embodiments, pattern 532 may be an opening defined by mask 530 . In some embodiments, pattern 532 may vertically overlap light emitting feature 526a. In some embodiments, pattern 532 may vertically overlap light emitting feature 510a. In some embodiments, pattern 532 may vertically overlap pattern 520 . In some embodiments, pattern 532 may be at least vertically aligned with pattern 520 . Additionally, some openings defined by mask 530 may be vertically aligned with conductive features 518 and expose dielectric layer 528 . In some embodiments, the patterns 520 and 532 may serve as an overlay marking structure 540 . In some embodiments, after the pattern 532 is formed, an overlay error may be generated to determine a degree of misalignment between the patterns 520 and 532 .

In some embodiments, the overlay measurement device may include a light source to emit a light. Light can be used to induce fluorescent features 510a and/or 526a to fluoresce. The fluorescence described above can help to increase the contrast of the patterns 520 and 532 in the optical image. Therefore, the overlay error between the patterns 520 and 532 can be measured more accurately.

Referring to FIG. 12O, an etching process may be performed to form the opening O2. The opening O2 can penetrate through the mask 530 , the dielectric layer 528 and the bottom layer 522 . In some embodiments, conductive features 518 may be exposed from opening O2. In some embodiments, a mask (not shown) may be formed to fill the opening vertically overlapping the light emitting feature 526a. After the opening O2 is formed, the mask can be removed.

Referring to FIG. 12P , a conductive material may be formed to fill the opening O2 and the pattern 532 , thus forming the conductive feature 534 . Accordingly, a semiconductor element structure 500a can be produced. In some embodiments, conductive feature 534 may laterally overlap light emitting feature 526a. In some embodiments, conductive features 534 may laterally overlap pattern 532 . In some embodiments, conductive features 534 may include W, Al, Cu, Ti, Ta, alloys thereof, or other suitable materials. In some embodiments, conductive feature 534 may contact conductive feature 518 . In some embodiments, conductive feature 534 may be electrically connected to conductive feature 518 . In some embodiments, conductive feature 534 may be vertically aligned with conductive feature 518 .

FIG. 13 is a cross-sectional view illustrating a semiconductor device structure 500b according to some embodiments of the present disclosure. The semiconductor device structure 500b shown in FIG. 13 may be similar to the semiconductor device structure 500a shown in FIG. 12, except that the semiconductor device structure 500b may have light emitting features 510b instead of light emitting features 510a.

The light emitting feature 510 b has a projected area A1 on the substrate 502 . Light emitting feature 526a has projected area A2 on substrate 502 . In some embodiments, the projection area A1 may not be equal to the projection area A2. In some embodiments, projected area A1 may exceed projected area A2.

FIG. 14 is a cross-sectional view illustrating a semiconductor device structure 500c according to some embodiments of the present disclosure. The semiconductor element structure 500c shown in FIG. 14 may be similar to the semiconductor element structure 500a shown in FIG. Luminescent properties 526b of properties 526a.

In some embodiments, projected area A2 of light emitting feature 526b may exceed projected area A1 of light emitting feature 510a.

FIG. 15 is a cross-sectional view illustrating a semiconductor device structure 500d according to some embodiments of the present disclosure. The semiconductor device structure 500d shown in FIG. 15 may be similar to the semiconductor device structure 500a shown in FIG. 12, except that the semiconductor device structure 500d may have a light emitting characteristic 510c instead of the light emitting characteristic 510a.

In some embodiments, light emitting features 510c may be in direct contact with pattern 520 . In some embodiments, the light emitting features 510c may be in direct contact with the bottom surface of the pattern 520 .

The processes illustrated in FIGS. 11 and 12A-12P may be implemented in the controller 390, or a computing system that organizes the preparation of wafers by controlling all of a portion of the fabrication equipment in the facility. FIG. 16 is a diagram illustrating hardware of a semiconductor fabrication system 600 of various aspects of the present disclosure. The system 600 includes one or more hardware processors 601 and a non-transitory computer-readable storage medium 603 encoded with, ie stored with, program code (ie, a set of executable instructions). Computer readable storage medium 603 may also be encoded with instructions for interfacing with manufacturing equipment that produces semiconductor devices. The processor 601 is electrically connected to the computer-readable storage medium 603 via the bus bar 605 . The processor 601 is also electrically coupled to an input and output (I/O) interface 607 via a bus bar 605 . The network interface 609 is also electrically connected to the processor 601 via the bus bar 605 . The network interface is connected to a network, so the processor 601 and the computer-readable storage medium 603 can be connected to external components via the network 380 . The processor 601 is configured to execute computer program codes encoded in the computer-readable storage medium 605, so that the system 600 can be used to perform some or all of the operations described in the method shown in FIG. 11 .

In some exemplary embodiments, processor 601 is, but is not limited to, a central processing unit (CPU), a multiprocessor, a distributed processing system, an application-specific integrated circuit way (ASIC) and/or a suitable processing unit. Various circuits or units are within the scope of this disclosure.

In some exemplary embodiments, computer readable storage medium 603 is, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, and/or semiconductor system (or device or equipment). For example, the computer readable storage medium 603 includes a semiconductor or solid state memory, a magnetic tape, a removable computer disk, a random access memory (RAM), a read only memory (ROM), a hard disk and/or or a CD. In one or more exemplary embodiments using optical discs, computer readable storage medium 603 also includes a compact disc - read only memory (CD-ROM), a compact disc - read/write (CD-R/W) and/or Or a digital versatile disc (DVD).

In some exemplary embodiments, the storage medium 603 stores computer program code configured to enable the system 600 to execute the method shown in FIG. 11 . In one or more exemplary embodiments, the storage medium 601 also stores information required to perform the methods illustrated in FIG. Group executable instructions. In some exemplary embodiments, a user interface 610 , such as a graphical user interface (GUI), may be provided for the user to operate on the system 600 .

In some exemplary embodiments, the storage medium 603 stores instructions for interfacing with external machines. The instructions enable the processor 601 to generate instructions readable by an external machine to effectively implement the method illustrated in FIG. 11 during analysis.

System 600 includes input and output (I/O) interface 607 . The I/O interface 607 is connected with external circuits. In some exemplary embodiments, the I/O interface 607 may include, but is not limited to, a keyboard, keypad, mouse, trackball, trackpad, touch screen, and/or cursor arrow keys for processing The device 601 communicates information and commands.

In some exemplary embodiments, I/O interface 607 may include a display Devices, such as a cathode ray tube (CRT), liquid crystal display (LCD), speakers, etc. For example, a monitor displays information.

The system 600 can also include a network interface 609 coupled to the processor 601 . Network interface 609 allows system 600 to communicate with network 380 to which one or more other computer systems are connected. For example, system 600 may be connected to manufacturing equipment 320-1, ..., and 320-N, 330, 340-1, ..., and 340-N, exposure equipment 350, and stack through network interface 609 connected to network 380. The measurement device 360 is set.

One aspect of the present disclosure provides a semiconductor device structure. The semiconductor device structure includes a base, a first conductive feature, a first light emitting feature, a first pattern, and a second pattern. The first light emitting feature is disposed on the base. The first pattern is disposed on the first light emitting feature. The second pattern is disposed on the first pattern. The first conductive feature at least laterally overlaps the first pattern. The first light emitting feature is configured to emit a light comprising a first wavelength. The first pattern has a first transmittance to the light of the first wavelength. The second pattern has a second transmittance to the light of the first wavelength. The first transmittance is different from the second transmittance.

Another aspect of the disclosure provides a semiconductor device structure. The semiconductor device structure includes a substrate, a first light-emitting feature, an overlay mark structure, and a first conductive feature. The first light emitting feature is disposed on the base. The first light emitting feature includes metal ions for emitting a fluorescent light including a first wavelength. The overlay marking structure is disposed on the first light emitting feature. The overlay marking structure is configured to absorb and/or reflect the fluorescent light emitted from the first light emitting feature. The first conductive feature overlaps at least a side of the overlying marking structure.

Another aspect of the disclosure provides a method for fabricating a semiconductor device structure. The preparation method includes: providing a substrate; forming a first light-emitting feature on the substrate; A first pattern is formed on the first light emitting feature; a first conductive feature is formed laterally overlapping the first pattern; and a second pattern is formed on the first pattern, wherein the first light emitting feature is configured to emit comprising a light of a first wavelength, and the first pattern has a first transmittance to the light comprising the first wavelength, the second pattern has a second transmittance to the light comprising the first wavelength, And the first transmittance is different from the second transmittance.

Embodiments of the disclosure provide a semiconductor device structure including light emitting features. The light emitting feature can be configured to fluoresce. Fluorescence can improve the contrast between the current layer and the pre-layer of the superimposed marking structure in the optical image. Therefore, the overlay error can be more accurately calculated from the above optical image.

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and substitutions can be made without departing from the spirit and scope of the present disclosure as defined by the claims. For example, many of the processes described above can be performed in different ways and replaced by other processes or combinations thereof.

Furthermore, the scope of the present application is not limited to the specific embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. Those skilled in the art can understand from the disclosure content of this disclosure that existing or future developed processes, machinery, manufacturing, A composition of matter, means, method, or step. Accordingly, such processes, machines, manufacturing, material compositions, means, methods, or steps are included in the patent scope of this application.

500a: Semiconductor device structure

502: base

504: metallization layer

506: bottom layer

510a: Luminous features

512: dielectric layer

514: dielectric layer

518: Conductive features

520: pattern

522: bottom layer

526a: Luminous features

528: dielectric layer

530: mask

532: pattern

534: Conductive features

540: Overlapping markup structures

X: direction

Y: Direction

Z: Direction

Claims (18)

A method for preparing a semiconductor element structure, comprising: providing a substrate; providing a first luminescent feature on the substrate, wherein the first luminescent feature is used to emit a fluorescent light including a first wavelength; An overlay marking structure is provided, wherein the overlay marking structure is configured to absorb or reflect the fluorescent light emitted from the first light emitting feature; and a first conductive feature is provided at least laterally overlapping the overlay marking structure. The preparation method as claimed in claim 1, wherein the first luminescent feature comprises metal ions. The preparation method as claimed in claim 1, wherein the superimposed marking structure includes a first pattern and a second pattern on the first pattern, wherein the first pattern has a certain value for the fluorescent light including the first wavelength The first transmittance, the second pattern has a second transmittance to the fluorescent light including the first wavelength, and the first transmittance is different from the second transmittance. The manufacturing method according to claim 3, wherein the first pattern at least laterally overlaps the first conductive feature. The preparation method as claimed in claim 3, further comprising: forming a second light-emitting feature between the first pattern and the second pattern, wherein the second light-emitting feature is used to emit a fluorescent light, and the fluorescent light includes different a second wavelength at the first wavelength. The manufacturing method as claimed in claim 5, wherein the second pattern has a third transmittance to the fluorescent light including the second wavelength, and the third transmittance is different from the second transmittance. The method of claim 5, wherein the first conductive feature does not laterally overlap the second light emitting feature. The manufacturing method according to claim 5, wherein the first light-emitting feature vertically overlaps the second light-emitting feature. The manufacturing method as claimed in claim 5, further comprising: forming a second conductive feature vertically aligned with the first conductive feature, wherein the second conductive feature overlaps at least a side of the second light-emitting feature. A method for preparing a semiconductor element structure, comprising: providing a base; forming a first light-emitting feature on the base; forming a first pattern on the first light-emitting feature; forming a first pattern laterally overlapping the first pattern. conductive features; and forming a second pattern on the first pattern; wherein the first light-emitting feature is configured to emit a light comprising a first wavelength, and the first pattern has an effect on the light comprising the first wavelength a first transmittance, the second pattern has a second transmittance to the light including the first wavelength, and the first transmittance and the second The transmittance is different. The preparation method as claimed in claim 10, wherein the first luminescent feature comprises metal ions. The manufacturing method as claimed in claim 10, further comprising: forming a second light-emitting feature on the first pattern, wherein the second pattern is formed on the second light-emitting feature, and the second light-emitting feature is configured to emit A light comprising a second wavelength different from the first wavelength. The preparation method as claimed in claim 12, wherein the second luminescent feature comprises metal ions. The manufacturing method as claimed in claim 12, wherein the second pattern has a third transmittance to the light including the second wavelength, and the third transmittance is different from the second transmittance. The manufacturing method as claimed in claim 14, further comprising: forming a second conductive feature vertically aligned with the first conductive feature. The manufacturing method according to claim 15, wherein the second conductive feature overlaps the second pattern laterally. The manufacturing method as claimed in claim 10, wherein the first pattern and the second pattern together serve as an overlay mark structure, and the first pattern at least vertically overlaps the second pattern. The preparation method as claimed in claim 10, wherein the first light-emitting feature is configured to emit a fluorescent light at the first wavelength.

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