TWI782762B - Diffusion mechanism and thin-film-deposition equipment using the same - Google Patents

Abstract

The present invention is a diffusion mechanism and a film deposition machine thereof, which include a transmission pipeline, a flow-guiding unit, an input pipeline and a diffusion plate, wherein the input pipeline is connected to the diffusion plate through the transmission pipeline. The transmission pipeline has a transmission space, and the flow-guiding unit is arranged in the transmission space and divides the transmission space into a first and a second transmission spaces. The upper surface of the flow-guiding unit has a protrusion, and a plurality of diversion pipelines are arranged around the protrusion, wherein the diversion pipelines are inclined relative to the upper and lower surfaces of the flow-guiding unit. The gas or plasma in the first transmission space is transported to the second transmission space via the diversion pipelines, and a vortex is formed in the second transmission space to form a uniformly distributed gas or plasma under the diffusion mechanism.

Description

Diffusion mechanism and film deposition machine using the diffusion mechanism

The invention relates to a diffusion mechanism and its thin film deposition machine, which can be used to output evenly distributed precursors under the diffusion mechanism.

With the continuous advancement of integrated circuit technology, the current electronic products are developing towards the trend of light, thin, small, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. With the reduction of the size of transistors, the current transmission time and energy consumption can be reduced, so as to achieve the purpose of fast calculation and energy saving. In today's miniaturized transistors, some key thin films are almost only a few atoms thick, and the atomic layer deposition process is one of the main technologies for developing these microstructures.

The atomic layer deposition process is a technology that coats substances layer by layer on the surface of a substrate in the form of single atoms. The main reactants of atomic layer deposition are two chemical substances, usually called precursors, and the two precursors are used according to Sequentially sent to the reaction space.

Specifically, the first precursor is delivered into the reaction space first, so that the first precursor is guided to the surface of the substrate, and the process of chemical adsorption is automatically terminated when the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is extracted to remove the residual first precursor in the reaction space. Injecting the second precursor into the reaction space, so that the second precursor and the chemisorbed The first precursor attached to the surface of the substrate reacts to form a desired film, and the reaction process is completed until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Then inject cleaning gas into the reaction space to remove the residual second precursor in the reaction space. By repeating the above steps, a thin film can be formed on the substrate.

In practical applications, the uniform distribution of precursors in the reaction space and the temperature of the substrate will have a considerable impact on the uniformity of the atomic layer deposition film. For this reason, the major process equipment manufacturers do their best to improve the diffusion mechanism. To improve the quality of the atomic layer deposition process.

As mentioned in the prior art, the commonly used diffusion mechanism often cannot make the precursor uniformly distributed on the substrate, which affects the quality of the film deposited on the substrate surface. To this end, the present invention proposes a novel diffusion mechanism and a thin film deposition machine using the diffusion mechanism, which can form uniformly distributed precursors on the substrate and/or the carrier plate, so as to facilitate the formation of a thin film with uniform thickness on the surface of the substrate.

An object of the present invention is to provide a diffusion mechanism, which mainly includes a transmission line, a flow guide unit and a diffusion plate, wherein the transmission line is fluidly connected to the diffusion plate. The diversion unit is arranged in the transmission space of the transmission pipeline, and divides the transmission space into a first transmission space and a second transmission space.

The diversion unit has a raised part and a plurality of diversion pipelines, wherein the raised part is arranged on the upper surface of the diversion unit, and the diversion pipeline is arranged around the raised part, and the diversion pipeline is relatively The upper and lower surfaces of the unit are inclined.

The gas or plasma is transported from the first transmission space to the second transmission space through the diversion unit, and the gas or plasma will form a vortex in the second transmission space after passing through the inclined diversion pipeline, and Delivered to the diffuser plate where the diversion line is connected. Specifically, the setting of the permeation guide unit can increase the transmission rate of the gas or plasma, and is beneficial to form uniformly distributed gas or plasma under the diffusion plate, so as to form a thin film with uniform thickness on the surface of the wafer.

The first transmission space of the transmission pipeline is connected to an input pipeline, wherein the input pipeline is arranged on one side of the raised part, and can be inclined relative to the upper surface of the flow guide unit, so that the gas or plasma entering the first transmission space from the input pipeline , will rotate around the convex part and form a vortex in the first transmission space, so as to facilitate the gas or plasma in the first transmission space to be transported to the second transmission space through the inclined diversion pipeline.

An object of the present invention is to provide a thin film deposition machine, which mainly includes a cavity, a diffusion mechanism and a carrier plate, wherein the carrier plate is located in an accommodating space of the cavity, and the diffusion mechanism is fluidly connected to the cavity. Accommodate space. The carrier plate is used to carry at least one wafer, and the diffusion mechanism faces the carrier plate and/or the wafer, and is used to deliver the precursor gas or plasma to the wafer, so as to facilitate the deposition of a film with uniform thickness on the surface of the wafer .

In order to achieve the above object, the present invention proposes a diffusion mechanism, comprising: a transmission pipeline including a transmission space; a diversion unit arranged in the transmission space of the transmission pipeline, and dividing the transmission space into a first transmission space and A second transmission space, the flow guide unit includes: a main body, including a first surface and a second surface, wherein the first surface faces the first transmission space, and the second surface faces the second transmission space; a protrusion The part is arranged on the first surface of the main body; a plurality of diversion pipelines are located around the raised part of the main body and communicate with the first surface and the second surface of the main body, wherein the diversion pipeline is opposite to the first surface of the main body A surface and a second surface are inclined; at least one input pipeline is fluidly connected to the first transmission space of the transmission pipeline, and is used to transport at least one gas or at least one plasma to the first transmission space, wherein the gas entering the first transmission space or plasma A plurality of diversion pipelines of the diversion unit are transported to the second transmission space; and a diffusion plate is connected to the transmission pipeline. The diffusion plate includes a first surface, a second surface and a plurality of perforations, and the perforations communicate with the first surface of the diffusion plate. The surface and the second surface, wherein the first surface of the diffusion plate is fluidly connected to the second transmission space, and the gas or plasma in the second transmission space is transmitted to one side of the second surface of the diffusion plate through a plurality of perforations of the diffusion plate.

The present invention provides a thin film deposition machine, comprising: a cavity, including an accommodating space; a diffusion mechanism, connected to the cavity, including: a transmission pipeline, including a transmission space; a flow guide unit, arranged on the transmission pipeline In the transmission space, and the transmission space is divided into a first transmission space and a second transmission space, the flow guide unit includes: a main body, including a first surface and a second surface, wherein the first surface faces the first transmission space space, while the second surface is facing the second transmission space; a raised part is arranged on the first surface of the main part; a plurality of diversion pipelines are located around the raised part of the main part and communicate with the first part of the main part The surface and the second surface, wherein the diversion pipeline is inclined relative to the first surface and the second surface of the main body; at least one input pipeline is fluidly connected to the first transmission space of the transmission pipeline, and is used to transfer at least one gas or at least one plasma transported to the first transmission space, wherein the gas or plasma entering the first transmission space is transported to the second transmission space through a plurality of diversion pipelines of the diversion unit; a diffusion plate is connected to the transmission pipeline, and the diffusion plate includes a first surface , a second surface and a plurality of perforations, the perforations connect the first surface and the second surface of the diffuser plate, wherein the first surface of the diffuser plate is fluidly connected to the second transmission space, and the second surface of the diffuser plate is connected to the container of the cavity The gas or plasma in the second transmission space is transported to the accommodation space through a plurality of perforations of the diffusion plate; a carrier plate is located in the accommodation space, faces the diffusion mechanism, and is used to carry at least one wafer.

The diffusion mechanism and the thin film deposition machine described above, wherein the transmission pipeline includes: a pipe body, including a bearing part for carrying the flow guide unit, wherein the flow guide unit and the pipe body form a second transmission space; and a cover body, used for to connect the pipe body and cover the flow guide unit, wherein a first transmission space is formed between the cover body and the flow guide unit.

The diffusion mechanism and the thin film deposition machine, wherein the cover body includes a concave portion connected to the first transmission space, and the tube body includes a first end and a second end, the first end is connected to the flow guide unit, and the second end is Fluidically connect the diffuser plate.

In the diffusion mechanism and film deposition machine, the cross-sectional area of the second end of the tube body is larger than the cross-sectional area of the first end.

The diffusion mechanism and film deposition machine include a diffusion space located between the first surface of the diffusion plate and the second end of the pipe body, the cross-sectional area of the diffusion space is from the second end of the pipe body to the first end of the diffusion plate. The direction of the surface gradually expands.

10: Diffusion agency

11: Transmission pipeline

111: cover body

1111: concave part

113: tube body

1131: bearing part

1132: first end

1134: second end

12: Transmission space

121: The first transmission space

123: Second transmission space

13: diversion unit

131: Main body

132: first surface

133: Raised part

134: second surface

135: diversion pipeline

1351: first opening

1353: second opening

137: ring flange

14: Diffusion space

15: Diffusion plate

151: first surface

153: second surface

155: perforation

17: Input pipeline

19: Transition unit

191: opening

20: Thin film deposition machine

21: Cavity

22:Accommodating space

23: carrying plate

25: Wafer

[ Fig. 1 ] is a three-dimensional cross-sectional schematic view of an embodiment of the diffusion mechanism of the present invention.

[ Fig. 2 ] is a three-dimensional perspective view of an embodiment of the flow guiding unit of the diffusion mechanism of the present invention.

[ Fig. 3 ] is a three-dimensional cross-sectional schematic view of an embodiment of the flow guide unit and the cover of the diffusion mechanism of the present invention.

[ Fig. 4 ] is a three-dimensional cross-sectional schematic view of an embodiment of the transmission pipeline and the flow guide unit of the diffusion mechanism of the present invention.

[ FIG. 5 ] is a schematic cross-sectional view of an embodiment of a thin film deposition machine using the diffusion mechanism of the present invention.

[ FIG. 6 ] is a schematic diagram of a simulation of gas or plasma transported by the diffusion mechanism of the present invention.

Please refer to FIG. 1 , which is a schematic cross-sectional view of an embodiment of the diffusion mechanism of the present invention. As shown in the figure, the diffusion mechanism 10 mainly includes a transmission pipeline 11, a flow guide unit 13, a diffuser plate 15 and at least one input pipeline 17, wherein the input pipeline 17 is fluidly connected to the diffuser plate 15 through the transmission pipeline 11, and the flow guide unit 13 is set in the transfer pipeline 11.

The transmission pipeline 11 can be a hollow cylinder and includes a transmission space 12 . The flow guide unit 13 is disposed in the transmission space 12 of the transmission pipeline 11 and divides the transmission space 12 into a first transmission space 121 and a second transmission space 123 .

Please refer to FIG. 2 , the diversion unit 13 includes a main body 131 , a raised portion 133 and a plurality of diversion pipelines 135 , wherein the main body 131 can be plate-shaped and includes a first surface 132 and a second surface 134, for example, the first surface 132 is an upper surface, and the second surface 134 is a lower surface. After the flow guide unit 13 is arranged in the transmission space 12 of the transmission pipeline 11, the first surface 132 of the main body 131 will face the first transmission space 121, and the second surface 134 of the main body 131 will face the second transmission space 123 .

The raised portion 133 is disposed on the first surface 132 of the main body portion 131, for example, the first surface 132 of the main body portion 131 may be circular, and the raised portion 133 is disposed on the center or central area of the first surface 132, and The first surface 132 of the main body portion 131 protrudes. In an embodiment of the present invention, the protruding portion 133 may be a truncated cone, a cone, or a cylinder.

A plurality of guide lines 135 are arranged around the raised portion 133 and communicate with the first surface 132 and the second surface 134 of the main body 131 , wherein the guide lines 135 are opposite to the first surface 134 of the main body 131 . The first surface 132 and the second surface 134 are inclined. For example, the guide line 135 forms a first opening 1351 on the first surface 132 of the main body 131, and forms a second opening 1353 on the second surface 134 of the main body 131, wherein the plurality of first openings 1353 on the first surface 132 An opening 1351 surrounds the protrusion 133 . For example, the first opening 1351 and the second opening 1353 can be located on the projection of the same virtual circle, and form the inclined guide line 135 .

In one embodiment of the present invention, an annular flange 137 may be provided on the first surface 132 of the main body 131, wherein the annular flange 137 protrudes from the first surface 132 of the main body 131, and is arranged around the raised portion 133 and Around the first openings 1351 of the plurality of guide lines 135 , for example, an annular flange 137 is disposed on an edge of the first surface 132 of the main body 131 .

As shown in FIG. 3 , the input pipeline 17 is fluidly connected to the first transmission space 121 of the transmission pipeline 11 and is used to transmit at least one gas or at least one plasma to the first transmission space 121 . The gas or plasma entering the first transmission space 121 rotates in the first transmission space 121 centered on the protrusion 133 , and is transported to the second transmission space 123 through the plurality of flow guide lines 135 of the flow guide unit 13 .

For example, the extension line of the input pipeline 17 is not aligned with the center of the raised portion 133 , and slightly deviates to one side of the raised portion 133 , so as to facilitate the rotation of the gas or plasma entering the first transmission space 121 around the raised portion 133 .

In an embodiment of the present invention, the outlet of the first transmission space 121 where the input pipeline 17 is connected to the transmission pipeline 11 may be equal to or higher than the top of the protrusion 133 . In addition, the input line 17 can be inclined relative to the first surface 132 of the main body portion 131 , so that the gas or plasma input into the first transmission space 121 through the input line 17 rotates downward at the center of the raised portion 133 and forms a vortex.

The diversion line 135 of the present invention is inclined relative to the first surface 132 of the main body 131 , for example, the direction in which the diversion line 135 is inclined is related to the rotation of the gas or plasma in the first transmission space 121 The direction is the same, so that the gas or plasma in the first transmission space 121 can be transported to the second transmission space 123 along the inclined guide line 135, and form a rotation around the axis of the transmission line 11 in the second transmission space 123 The swirl in the center.

The vortex formed by the gas or plasma in the second transmission space 123 not only rotates around the axis of the transmission pipeline 11, but also has a downward displacement component, so that the vortex formed by the gas or plasma is displaced toward the diffusion plate 15 , and detailed simulation diagrams will be described in subsequent embodiments.

In an embodiment of the present invention, as shown in FIG. 4 , the transmission pipeline 11 includes a pipe body 113 and a cover body 111, wherein the pipe body 113 includes a bearing portion 1131 for carrying the flow guide unit 13, for example, the bearing portion 1131 can It is a protruding portion located on the inner surface of the tube body 113 , wherein the carrying portion 1131 can protrude toward the axis of the tube body 113 along the radial direction of the tube body 113 . After the flow guide unit 13 is placed on the bearing portion 1131 of the pipe body 113 , the flow guide unit 13 and the pipe body 113 form a second transmission space 123 .

The cover body 111 is used to connect to the tube body 113 and cover the flow guide unit 13 disposed on the tube body 113 . Specifically, the flow guide unit 13 can be placed on the bearing portion 1131 of the tube body 113 first, and then the cover body 111 is used to cover the flow guide unit 13, and the cover body 111 is locked on the tube body 113 through screws to complete the process. The connection between the cover body 111 , the tube body 113 and the flow guiding unit 13 .

In an embodiment of the present invention, a recess 1111 can be provided on the lower surface of the cover 111, and a first transmission space 121 is formed between the cover 111 and the flow guide unit 13, for example, the shape of the recess 1111 and the shape of the protrusion 133 Similar in shape, both are truncated cones.

The tube body 113 is a hollow tubular member, and includes a first end 1132 and a second end 1134, wherein the cross-sectional area of the second end 1134 of the tube body can be larger than the first end 1132, so that the second transmission space of the tube body 113 123 is a truncated cone. The first end 1132 of the pipe body 113 is connected to the flow guiding unit 13 , for example, the flow guide unit 13 covers the first end 1132 of the pipe body 113 , and the second end 1134 of the pipe body 113 is fluidly connected to the diffuser plate 15 .

The diffuser plate 15 includes a first surface 151 and a second surface 153. For example, the first surface 151 and the second surface 153 are the upper surface and the lower surface respectively, wherein the first surface 151 of the diffuser plate 15 is fluidly connected to the second surface of the transmission line 11. Two transmission spaces 123 . In one embodiment of the present invention, as shown in FIG. 1 , the first surface 151 of the diffuser plate 15 is fluidly connected to the second end 1134 of the pipe body 113 , and the first surface 151 of the diffuser plate 15 is connected to the second end 1134 of the pipe body 113 . A diffusion space 14 is formed between the ends 1134 .

Specifically, the transmission pipeline 11 can be connected to the diffuser plate 15 through an adapter unit 19, wherein the adapter unit 19 is a hollow tube. The upper surface of the adapter unit 19 has a bearing part, the pipe body 113 of the transmission pipeline 11 can be placed on the bearing part of the adapter unit 19, and the transmission pipeline 11 is fixed on the adapter unit 19 through screws, so that the transmission pipeline The second transmission space 123 of 11 is connected to the hollow portion of the adapter unit 19 .

In addition, the lower surface of the adapter unit 19 has an opening 191 , wherein the opening 191 may be in the shape of a horn, a cone or a truncated cone. When the adapter unit 19 is connected to the diffuser plate 15, the opening 191 of the adapter unit 19 will cover the diffuser plate 15, and form a diffuser space 14 between the adapter unit 19 and the diffuser plate 15, wherein the cross-sectional area of the diffuser space 14 is determined by the tube The second end 1134 of the body 113 gradually expands toward the first surface 151 of the diffuser plate 15 .

The diffuser plate 15 can be a plate-shaped body, such as a circular plate, and includes a plurality of through holes 155 , wherein the through holes 155 communicate with the first surface 151 and the second surface 153 of the diffuser plate 15 . In actual application, the gas or plasma will form a vortex in the second transmission space 123 of the transmission pipeline 11, and be transmitted to the diffusion space 14, and then be transmitted to the second surface 153 of the diffusion plate 15 through the perforation 155 of the diffusion plate 15. side.

Please refer to FIG. 5 , which is a schematic cross-sectional view of an embodiment of a thin film deposition machine applying the diffusion mechanism of the present invention. As shown in the figure, the diffusion mechanism 10 of the above embodiment of the present invention can be applied to a thin film deposition machine 20, wherein the thin film deposition machine 20 can be an atomic layer deposition machine or a chemical vapor deposition machine.

The thin film deposition machine 20 mainly includes a cavity 21 , a carrier plate 23 and a diffusion mechanism 10 , wherein the carrier plate 23 is located in an accommodating space 22 of the cavity 21 and is used for carrying at least one wafer 25 .

The diffusion mechanism 10 is arranged on the cavity 21 and is fluidly connected to the accommodating space 22 of the cavity 21, wherein the diffusion plate 15 of the diffusion mechanism 10 faces the carrier plate 23, for example, the second surface 153 of the diffusion plate 15 is connected to the cavity 21. Accommodating space 22 . As shown in FIG. 6 , the diffusion mechanism 10 can transmit the gas or plasma to the diffusion plate 15 in a vortex manner, and transport the gas or plasma to the carrier plate 23 and/or the wafer 25 in the accommodation space 22 through the perforation 155 of the diffusion plate 15 above. A uniformly distributed gas or plasma is formed above the wafer 25 , which is conducive to forming a thin film with uniform thickness on the surface of the wafer 25 .

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.

10: Diffusion agency

11: Transmission pipeline

1134: second end

12: Transmission space

121: The first transmission space

123: Second transmission space

13: diversion unit

14: Diffusion space

15: Diffusion plate

151: first surface

153: second surface

155: perforation

17: Input pipeline

19: Transition unit

191: opening

Claims (4)

A diffusion mechanism, comprising: a transmission pipeline, including a transmission space; a flow guide unit, arranged in the transmission space of the transmission pipeline, and dividing the transmission space into a first transmission space and a second transmission space, The flow guide unit includes: a main body, including a first surface and a second surface, wherein the first surface faces the first transmission space, and the second surface faces the second transmission space; a protrusion , arranged on the first surface of the main body; a plurality of diversion pipelines, located around the raised portion of the main body, and communicating with the first surface and the second surface of the main body, wherein the guide the pipeline is inclined relative to the first surface and the second surface of the main body; at least one input pipeline is fluidly connected to the first transmission space of the transmission pipeline and used to deliver at least one gas or at least one plasma to the first a transmission space, wherein the gas or the plasma entering the first transmission space is transported to the second transmission space through the plurality of guiding lines of the guiding unit; and a diffusion plate connected to the transmission lines, the diffusion The plate includes a first surface, a second surface and a plurality of perforations, the perforations communicate the first surface and the second surface of the diffuser plate, wherein the first surface of the diffuser plate is fluidly connected to the second transmission space, And the gas or the plasma in the second transmission space is transmitted to one side of the second surface of the diffusion plate through the plurality of perforations of the diffusion plate, wherein the transmission pipeline includes: a pipe body, including a bearing A part is used to carry the flow guide unit, wherein the flow guide unit and the pipe body form the second transmission space; and a cover body is used to connect the pipe body and cover the flow guide unit, wherein the cover body and the pipe body The first transmission space is formed between the flow guide units, wherein the cover body includes a concave portion connected to the first transmission space, and the pipe body includes a first end and a second end, and the first end is connected to the flow guide unit. unit, the second end is fluidly connected to the diffuser plate, wherein the cross-sectional area of the second end of the pipe body is larger than the cross-sectional area of the first end. The diffusion mechanism as claimed in claim 1, comprising a diffusion space located between the first surface of the diffusion plate and the second end of the tube body, the cross-sectional area of the diffusion space is determined by the second end of the tube body gradually expands toward the first surface of the diffuser plate. A thin film deposition machine, comprising: a cavity, including an accommodating space; a diffusion mechanism, connected to the cavity, including: a transmission pipeline, including a transmission space; a flow guide unit, arranged on the transmission pipeline In the transmission space, and the transmission space is divided into a first transmission space and a second transmission space, the flow guide unit includes: a main body, including a first surface and a second surface, wherein the first surface faces The first transmission space, and the second surface faces the second transmission space; a raised portion is arranged on the first surface of the main body portion; a plurality of diversion pipelines are located on the raised portion of the main body portion and communicate with the first surface and the second surface of the main body, wherein the diversion pipeline is inclined relative to the first surface and the second surface of the main body; at least one input pipeline is fluidly connected to the transmission The first transmission space of the pipeline, and is used to transport at least one gas or at least one plasma to the first transmission space, wherein the gas or the plasma entering the first transmission space passes through the plurality of flow guiding units The diversion pipeline is transported to the second transmission space; a diffusion plate is connected to the transmission pipeline, and the diffusion plate includes a first surface, a second surface and a plurality of perforations, and the perforations communicate with the first surface of the diffusion plate and the The second surface, wherein the first surface of the diffusion plate is fluidly connected to the second transmission space, and the second surface of the diffusion plate is connected to the accommodation space of the cavity, and the second transmission space in the The gas or the plasma diffuses through the The plurality of perforations of the plate are transported to the accommodating space, wherein the transport pipeline includes: a pipe body including a bearing portion for carrying the flow guiding unit, wherein the flow guiding unit and the pipe body form the second transmission space ; and a cover, used to connect the tube and cover the flow guide unit, wherein the first transmission space is formed between the cover and the flow guide unit, wherein the cover includes a recess, connected to the first The transmission space, and the pipe body includes a first end and a second end, the first end is connected to the flow guiding unit, and the second end is fluidly connected to the diffuser plate, wherein the cross-sectional area of the second end of the pipe body is The cross-sectional area of the first end is larger than that of the first end; a carrier plate is located in the accommodating space, faces the diffusion mechanism, and is used for carrying at least one wafer. The thin film deposition machine as claimed in claim 3, comprising a diffusion space located between the first surface of the diffusion plate and the second end of the tube body, the cross-sectional area of the diffusion space is determined by the second end of the tube body The two ends expand gradually toward the first surface of the diffusion plate.

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