TWI778323B - Method of manufacturing light emitting device - Google Patents
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- TWI778323B TWI778323B TW109102655A TW109102655A TWI778323B TW I778323 B TWI778323 B TW I778323B TW 109102655 A TW109102655 A TW 109102655A TW 109102655 A TW109102655 A TW 109102655A TW I778323 B TWI778323 B TW I778323B
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
Description
本發明係關於一種發光裝置之製造方法。The present invention relates to a manufacturing method of a light-emitting device.
已知一種小型發光裝置,其利用包含反射材之密封構件覆蓋發光元件之側面及下表面,以代替設置收納發光元件之殼體,進而具備與發光元件之凸塊電極之下表面及密封構件之下表面相接之鍍覆電極(例如專利文獻1)。 又,已知有形成將一對電極與被覆構件連續覆蓋之金屬層,並照射雷射光而將金屬層之一部分去除之發光裝置之製造方法(例如專利文獻2)。 [先前技術文獻] [專利文獻]A small light-emitting device is known, which uses a sealing member including a reflective material to cover the side surface and the lower surface of the light-emitting element, instead of disposing a case for accommodating the light-emitting element, and further has a connection with the lower surface of the bump electrode of the light-emitting element and the sealing member. A plated electrode that is in contact with the lower surface (for example, Patent Document 1). In addition, there is known a method of manufacturing a light-emitting device in which a metal layer continuously covering a pair of electrodes and a covering member is formed, and a part of the metal layer is removed by irradiating laser light (for example, Patent Document 2). [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2012-124443號公報 [專利文獻2]日本專利特開2017-118098號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-124443 [Patent Document 2] Japanese Patent Laid-Open No. 2017-118098
[發明所欲解決之問題][Problems to be Solved by Invention]
本發明之發光裝置提供一種小型且可靠性較高之發光裝置之製造方法。 [解決問題之技術手段]The light-emitting device of the present invention provides a manufacturing method of a small and highly reliable light-emitting device. [Technical means to solve problems]
本發明之實施形態之發光裝置之製造方法包含以下步驟:準備中間物,該中間物具備於第1面側具有一對電極之發光元件、及以上述一對電極之表面之一部分露出的方式覆蓋上述發光元件之第1被覆構件;形成將上述露出之上述一對電極與上述第1被覆構件連續覆蓋之金屬膏層;以及對上述一對電極上之上述金屬膏層及上述第1被覆構件上之上述金屬膏層照射雷射光,而將上述一對電極間之上述金屬膏層及上述第1被覆構件上之上述金屬膏層之一部分去除,並以上述一對電極不短路之方式形成一對配線。 [發明之效果]The method of manufacturing a light-emitting device according to an embodiment of the present invention includes the steps of preparing an intermediate including a light-emitting element having a pair of electrodes on the first surface side, and covering a portion of the surfaces of the pair of electrodes so as to be exposed. a first covering member of the light-emitting element; forming a metal paste layer continuously covering the exposed pair of electrodes and the first covering member; and covering the metal paste layer on the pair of electrodes and the first covering member The above-mentioned metal paste layer is irradiated with laser light, and a part of the above-mentioned metal paste layer between the pair of electrodes and the above-mentioned metal paste layer on the above-mentioned first covering member is removed, and the above-mentioned pair of electrodes is not short-circuited to form a pair of wiring. [Effect of invention]
根據以上,可提供一種小型且可靠性較高之發光裝置之製造方法。According to the above, it is possible to provide a method for manufacturing a small and highly reliable light-emitting device.
以下,基於圖式對本發明之實施形態詳細地進行說明。再者,於以下之說明中,根據需要使用表示特定之方向或位置之用語(例如,「上」、「下」、「右」、「左」及包含該等用語之其他用語)。該等用語之使用係為了便於參照圖式來理解發明,並不由該等用語之含義限定本發明之技術性範圍。又,複數個圖式中所示之相同符號之部分表示相同之部分或構件。又,關於第1透光性構件、第2透光性構件、被覆構件等樹脂構件,無論成形、固化、硬化、單片化之前後,均使用相同名稱進行說明。即,於成形前為液狀,成形後成為固體,進而將成形後之固體分割而成為已改變形狀之固體之情形時等,以相同名稱對狀態根據步驟之階段而變化之構件進行說明。Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Furthermore, in the following description, terms indicating a specific direction or position (for example, "up", "down", "right", "left", and other terms including these terms) are used as necessary. These terms are used for the convenience of understanding the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of these terms. In addition, the parts with the same symbols shown in a plurality of drawings represent the same parts or members. In addition, regarding resin members, such as a 1st translucent member, a 2nd translucent member, and a covering member, the same name is used for description, irrespective of before and after shaping|molding, hardening, hardening, and singulation. That is, when it is liquid before molding, becomes solid after molding, and further divides the solid after molding into a solid whose shape has changed, the same name will be used to describe the member whose state changes according to the stage of the step.
將實施形態之封裝10示於圖1A~圖1C。圖1A係自實施形態之封裝之斜上方觀察之概略立體圖。圖1B係實施形態之封裝之概略仰視圖。圖1C係實施形態之封裝之概略剖視圖,且係沿圖1B之IC-IC之剖面。作為中間物之一例,使用封裝10進行說明,但只要具備發光元件1與第1被覆構件2即可,可採用各種形態。The
封裝10具備發光元件1、第1被覆構件2、第1透光性構件3、第2透光性構件4、及一對電極5。封裝10為長方體,但亦可設為任意之形狀。於俯視時發光元件1為矩形,但亦可為三角形、五邊形、六邊形等多邊形。發光元件1例如於基板上具備第1半導體層、活性層、及第2半導體層,且活性層及第2半導體層之一部分被去除。發光元件1具有第1面及與第1面相反之第2面,且於第1面側具有一對電極5。所謂第1面側,不僅意圖包括於發光元件1直接形成電極之情況,還意圖包括介隔半導體層或金屬等其他構件而間接形成電極之情況。一對電極5具有極性不同之第1電極5a與第2電極5b。於第1半導體層電性連接有第1電極5a,於第2半導體層電性連接有第2電極5b。於發光元件1之第2面側配置有第1透光性構件3。於俯視時第1透光性構件3之大小大於發光元件1之第2面或為相同之大小,或者亦可較其小。於第1透光性構件3之大小為與發光元件1之第2面相同之大小或大於第2面之情形時,亦可於發光元件1之側面配置第2透光性構件4。於俯視時第1透光性構件3為矩形,但亦可為三角形、五邊形、六邊形等多邊形。較佳為,第2透光性構件4發揮使發光元件1與第1透光性構件3接著之作用。第1被覆構件2如下設置,即,以一對電極5之表面露出之方式覆蓋發光元件1之第1面及側面、第1透光性構件3、第2透光性構件4。第1被覆構件2亦可於1次之步驟中形成,但可於2次以上之複數個步驟中形成。於在2次以上之步驟中形成第1被覆構件2之情形時,可設為複數層,亦可無界面地設為1層。The
使用上述封裝,可藉由以下之步驟形成發光裝置。圖2A至圖2E係說明實施形態之發光裝置之製造方法之概略剖視圖。封裝係將2個作為例示而示出,但並不限定於此,可使用複數個。圖3A至圖3D係說明實施形態之發光裝置之製造方法之概略仰視圖。圖4A係實施形態之發光裝置之概略俯視圖。圖4B係實施形態之發光裝置之概略立體圖。圖4A表示將發光裝置單片化之前之狀態,圖4B表示已單片化之發光裝置。Using the above package, a light-emitting device can be formed by the following steps. 2A to 2E are schematic cross-sectional views illustrating a method of manufacturing the light-emitting device according to the embodiment. Although two packages are shown as an example, the package is not limited to this, and a plurality of packages can be used. 3A to 3D are schematic bottom views illustrating a method of manufacturing the light-emitting device according to the embodiment. FIG. 4A is a schematic plan view of the light-emitting device according to the embodiment. 4B is a schematic perspective view of the light-emitting device of the embodiment. FIG. 4A shows a state before the light-emitting device is singulated, and FIG. 4B shows the light-emitting device that has been singulated.
實施形態之發光裝置之製造方法包含以下步驟:準備中間物,該中間物具備於第1面側具有一對電極之發光元件、及以上述一對電極之表面之一部分露出的方式覆蓋上述發光元件之第1被覆構件;形成將上述露出之上述一對電極與上述第1被覆構件連續覆蓋之金屬膏層;以及對上述一對電極上之上述金屬膏層及上述第1被覆構件上之上述金屬膏層照射雷射光,而將上述一對電極間之上述金屬膏層及上述第1被覆構件上之上述金屬膏層之一部分去除,並以上述一對電極不短路之方式形成一對配線。The method of manufacturing a light-emitting device according to the embodiment includes the steps of preparing an intermediate including a light-emitting element having a pair of electrodes on a first surface side, and covering the light-emitting element so that a part of the surfaces of the pair of electrodes is exposed. the first covering member; forming a metal paste layer continuously covering the exposed pair of electrodes and the first covering member; and covering the metal paste layer on the pair of electrodes and the metal on the first covering member The paste layer is irradiated with laser light to remove a part of the metal paste layer between the pair of electrodes and the metal paste layer on the first covering member to form a pair of wirings so that the pair of electrodes is not short-circuited.
藉由對金屬膏層照射雷射光,而產生雷射剝蝕,從而將中間物上之金屬膏層之一部分去除。藉此,金屬膏層被圖案化,可將金屬膏層作為配線或者外部連接電極。雷射剝蝕係當照射至固體之表面之雷射光之照射強度成為某大小(閾值)以上時,固體之表面被去除之現象。藉由利用雷射剝蝕,不使用遮罩等,便可進行金屬膏層之圖案化。By irradiating the metal paste layer with laser light, laser ablation is generated, so that a part of the metal paste layer on the intermediate is removed. Thereby, the metal paste layer is patterned, and the metal paste layer can be used as a wiring or an external connection electrode. Laser ablation is a phenomenon in which the surface of a solid is removed when the irradiation intensity of the laser light irradiated on the surface of the solid becomes a certain magnitude (threshold value) or more. By using laser ablation, the patterning of the metal paste layer can be performed without using a mask or the like.
例如,於使用金屬層以形成配線之情形時,對於形成金屬層,濺鍍或蒸鍍等作業步驟較為複雜且需要高等之設備,導致耗費成本。又,若金屬層為薄膜,則容易發生斷線,故而要求使金屬層變厚。另一方面,於以不短路之方式對金屬層照射雷射光而產生雷射剝蝕,形成異種電極之情形時,若金屬層較厚,則必須提高雷射輸出,或者對金屬層之熔出或去除費工夫,如此要求改善作業效率。 對此,可藉由使用實施形態中之金屬膏層而簡易且高精度地形成配線。又,金屬膏層係於複數種金屬粉中包含樹脂者,因此藉由對金屬膏層照射雷射光,樹脂容易濺出,能大幅抑制雷射輸出。又,亦能大幅縮短雷射照射時間,從而能大幅改善作業效率。又,由於可利用雷射剝蝕來大幅改善作業效率,故而可使金屬膏層變厚,從而不易發生斷線。進而,藉由使用雷射剝蝕將金屬膏層之一部分去除,能夠形成線寬較細之槽,從而能夠可靠性高地實現更小型之發光裝置。 於導光板上配置複數個封裝,但其個數並不特別限定。例如,於在導光板上配置多個封裝之後,以4列4行之合計16個封裝成為1個區段之方式單片化。藉由將1個區段之各者電性連接可形成能夠擴展之大型顯示器,並且於陷入一部分不亮之情形時亦可針對每個區段更換,故而可容易地進行更換。 以下,對各步驟進行詳細敍述。For example, in the case of using a metal layer to form wiring, for forming the metal layer, the operation steps such as sputtering or vapor deposition are complicated, and high-level equipment is required, resulting in high cost. In addition, when the metal layer is a thin film, disconnection is likely to occur, and therefore, it is required to increase the thickness of the metal layer. On the other hand, when the metal layer is irradiated with laser light without short-circuiting to cause laser ablation to form dissimilar electrodes, if the metal layer is thick, it is necessary to increase the laser output, or to melt or melt the metal layer. It takes time to remove, and thus it is required to improve work efficiency. On the other hand, by using the metal paste layer in the embodiment, wiring can be easily and accurately formed. In addition, since the metal paste layer contains a resin in a plurality of metal powders, by irradiating the metal paste layer with laser light, the resin is likely to be spattered, and the laser output can be greatly suppressed. In addition, the laser irradiation time can be greatly shortened, and the work efficiency can be greatly improved. In addition, since the work efficiency can be greatly improved by laser ablation, the metal paste layer can be thickened, and disconnection is less likely to occur. Furthermore, by removing a part of the metal paste layer using laser ablation, a groove with a narrow line width can be formed, and a smaller light-emitting device can be realized with high reliability. A plurality of packages are arranged on the light guide plate, but the number is not particularly limited. For example, after arranging a plurality of packages on the light guide plate, a total of 16 packages in 4 columns and 4 rows are singulated into one segment. A large-scale display that can be expanded can be formed by electrically connecting each of one segment, and it can be easily replaced for each segment when it falls into a situation where a part of the segment does not light up. Hereinafter, each step will be described in detail.
(準備中間物之步驟)
準備中間物,該中間物具備於第1面側具有一對電極5之發光元件1、及以一對電極5之表面之一部分露出的方式覆蓋發光元件1之第1被覆構件2。
於導光板30上載置封裝10。較佳為,封裝10介隔具有接著性之第3透光性構件40而配置於導光板30上。較佳為,以封裝10之第1透光性構件3與導光板30接觸之方式配置。較佳為,第3透光性構件40覆蓋第1透光性構件3之側面與第1被覆構件2之側面。其原因在於:藉此,可將自發光元件1出射之光向側方擴展。較佳為,配置於導光板30上之封裝10為複數個,且以縱向及橫向上規則地排列之狀態配置。較佳為,由第2被覆構件50覆蓋配置於導光板30上之封裝10之側方。較佳為,第2被覆構件50之厚度較封裝10之厚度薄,但亦可相同或較其厚。其原因在於:容易形成金屬膏層25或配線20。較佳為,一對電極5包含Cu。其原因在於:導電性良好。(steps to prepare intermediates)
An intermediate including the light-emitting
導光板30可使用平板,亦可於平板之一部分設置配置封裝10之凹部。凹部於俯視時為矩形,較佳為設為與封裝10相似之形狀,但亦可為三角形、五邊形、六邊形等多邊形。凹部之深度可與封裝10之高度相同,亦可較其淺。藉由使凹部之深度較封裝10之高度淺,而於剖面觀察時封裝10相較於導光板30突出一部分,亦可由第2被覆構件50覆蓋封裝10之側面。The
相鄰之發光元件1間之距離可根據目標發光裝置100之大小、發光元件1之大小等而適當選擇。但是,由於在後續步驟中將被覆構件切斷而單片化,故而亦考慮其切斷材料(切斷刀之寬度)等而配置。The distance between adjacent light-emitting
於發光元件1之第1面上且一對電極5間配置有第1被覆構件2。該一對電極5之間隔較佳為10 μm以上,特佳為20 μm以上。又,該一對電極5之間隔較佳為100 μm以下,特佳為50 μm以下。藉此,藉由下述雷射光之照射可容易形成一對配線,可使用小型封裝10。較佳為,根據雷射光之點徑來設定電極5間,若為不發生短路之寬度,則較窄者更佳。The
(形成金屬膏層之步驟)
形成將露出之一對電極5與第1被覆構件2連續覆蓋之金屬膏層。
於導光板30上配置有複數個封裝10,且封裝10分別介隔第3透光性構件40而配置,於封裝10之側方配置有第2被覆構件50。以將第1被覆構件2及第2被覆構件50連續覆蓋之方式配置金屬膏層25。形成金屬膏層25之步驟較佳為利用印刷或噴霧之任一種方法形成。印刷可使用凹版印刷、凸版印刷、平板印刷、網版印刷等任一種方法,較佳為網版印刷。噴霧可使用噴墨、噴氣、噴射點膠之任一種方法。藉此,不如濺鍍或蒸鍍般需要高等之設備,便可簡易地形成金屬膏層25,進而形成配線20。較佳為,金屬膏層25之厚度形成為1 μm以上,較佳為3 μm以上50 μm以下,特佳為5 μm以上20 μm以下。藉由設為規定之厚度以上,能夠確保導通,從而提高可靠性。又,藉由使金屬膏層25為規定之厚度,能夠降低電阻。如此,於使金屬膏層25為規定之厚度之情形時,亦可藉由利用雷射剝蝕而容易地進行配線20之形成。金屬膏層25之寬度只要可取得導通即可,例如較佳為200 μm以上1000 μm以下,特佳為400 μm以上700 μm以下。(Step of Forming Metal Paste Layer)
A metal paste layer continuously covering the exposed one pair of
較佳為,於準備中間物之步驟中,使用複數個發光元件1,於形成金屬膏層25之步驟中,金屬膏層25連續覆蓋複數個發光元件1,於形成下述配線20之步驟中,複數個發光元件1電性連接。藉此,可將複數個發光元件1簡易地配線。Preferably, in the step of preparing the intermediate, a plurality of light-emitting
此處所使用之金屬膏層25較佳為樹脂與金屬粉之混合物,進而亦可含有有機溶劑。金屬粉之大小較佳為0.01 μm以上10 μm以下,特佳為0.1 μm以上5 μm以下。藉由控制用於金屬膏層25之金屬粉之大小可提高導電性。又,於印刷金屬膏層25之情形時可調整黏度。於金屬膏層25硬化前,樹脂亦可為粉體狀或液狀之任一者。The
較佳為,金屬粉包含銀粉、銅粉、或由金屬膜覆蓋之銀粉或銅粉之至少任一種。藉此,可提高導電性。
金屬膏層25較佳為金屬粉之濃度為60重量%以上95重量%以下。藉由提高金屬粉之濃度,能夠提高導電性並且將電阻抑制得較低。又,藉由使樹脂之比率為規定之範圍,可容易進行印刷等。Preferably, the metal powder includes at least one of silver powder, copper powder, or silver powder or copper powder covered with a metal film. Thereby, electrical conductivity can be improved.
The
(形成一對配線之步驟)
對連續覆蓋一對電極5與第1被覆構件2之金屬膏層25照射雷射光,將該金屬膏層25之一部分去除,以一對電極5不短路之方式形成成為一對配線20之第1配線20a、第2配線20b。第1配線20a、第2配線20b係藉由將金屬膏層25之一部分切斷,由該金屬膏層25形成者,並非使用與金屬膏層25不同之材料。又,藉由照射雷射光將金屬膏層25之一部分去除,而於1個發光元件1之一對電極5間金屬膏層25成為被分斷之狀態,成為一對配線20即第1配線20a、第2配線20b,但為與被覆相鄰之另一個發光元件1之電極5之金屬膏層25連續的狀態。即,保持將一個發光元件1之電極5間之金屬膏層25分斷,使另一個發光元件1之電極5間之金屬膏層25連續之狀態,不作為2個發光元件之同時驅動用之配線發揮功能。(Step of forming a pair of wirings)
The
例如,亦可以利用1個配線20同時驅動2個發光元件1之方式形成第1配線20a、第2配線20b(圖3A~圖3D)。金屬膏層25係藉由對成為原料之金屬膏進行印刷或噴霧等,使金屬膏層25中所包含之樹脂硬化而形成。硬化可使用加熱或雷射照射等硬化方法。對硬化後之金屬膏層25照射雷射光。雷射光較佳為脈衝照射,適當調整雷射之點徑之大小。又,脈衝照射之次數較佳為1次至10次以內,特佳為2次至5次以內。藉由使金屬膏層25變厚可提高導電性或降低電阻,另一方面,由於以第1電極5a、第2電極5b不短路之方式將金屬膏層25切斷,故而脈衝照射之次數會增加。因脈衝照射之次數增加而導致形成一對配線20之步驟時間變長,故而脈衝照射之次數越少越好。由此,較佳為使脈衝照射之次數為2次至5次以內。又,亦可對同一部位連續複數次進行脈衝照射,但由於會蓄熱,故而亦可移動雷射,以不對同一部位連續照射之方式於經過規定時間後再次進行脈衝照射。藉由使用雷射可進行微細加工,並且可將切斷部位之位置精度保持得較高。雷射光之強度、照射點之直徑及照射點之移動速度係考慮第1被覆構件2或金屬膏層25之導熱率及其等之導熱率差等,以於第1被覆構件2上之金屬膏層25產生雷射剝蝕之方式設定。For example, the
雷射光之波長亦可使用紅外區域(例如1064 nm附近)、紅色區域(例如640 nm附近)之雷射、或綠色區域(例如532 nm附近)之雷射、或較綠色區域短之藍色區域或紫外線區域(例如355 nm附近)之發光波長之雷射。可使用紫外線區域之波長,高效率地產生剝蝕,從而提高量產性。又,雷射之脈衝寬度可使用奈秒、微微秒、飛秒等。例如,於532 nm附近之綠色區域使用脈衝寬度為奈秒之雷射自輸出或作業效率之觀點而言較佳。The wavelength of the laser light can also be used in the infrared region (such as around 1064 nm), the laser in the red region (such as around 640 nm), or the laser in the green region (such as around 532 nm), or the blue region shorter than the green region. Or a laser with an emission wavelength in the ultraviolet region (such as around 355 nm). Efficient ablation can be generated using wavelengths in the ultraviolet region, thereby improving mass productivity. Also, the pulse width of the laser can be nanoseconds, picoseconds, femtoseconds, or the like. For example, it is preferable to use a laser with a pulse width of nanoseconds in the green region around 532 nm from the viewpoint of output or operational efficiency.
較佳為,照射寬度較一對電極5之距離窄之雷射光。例如,將第1電極5a與第2電極5b之距離設為30 μm,藉由使用雷射之加工寬度為30 μm左右者,可使第1配線20a與第2配線20b之距離為30 μm。自能量集中之觀點而言,較佳為雷射光自相對於金屬膏層25之表面為90度之垂直方向照射,但為了有效率地進行由剝蝕所致之飛散,較佳為自相對於金屬膏層25之表面為45度至145度,較佳為70度至110度之傾斜方向進行照射。
金屬膏層25之樹脂或金屬粉因雷射照射而飛散,故而進行集塵。集塵較佳為沿著與導光板30之表面平行之方向或對導光板30之表面賦予30度以內之角度進行集塵。Preferably, the irradiation width of the laser light is narrower than the distance between the pair of
較佳為於發光元件1之第1面上且一對電極5間配置有第1被覆構件2,於形成一對配線20之步驟中,配置於發光元件1之第1面上且一對電極5間之第1被覆構件2藉由雷射光被去除一部分。即,配置於一對電極5間之第1被覆構件2並不藉由雷射光完全被去除,而殘存一部分。由於第1被覆構件2為絕緣性,故而藉由殘存第1被覆構件2可防止第1配線20a與第2配線20b之短路。殘存之第1被覆構件2之厚度較佳為電極5之厚度之1/5以上4/5以下。Preferably, the
此處,為雷射之照射方法,於導光板30上將複數個發光元件1於列方向及行方向排列配置。於該發光元件1上配置規定之寬度之金屬膏層25。然後,對發光元件1之一對電極5間照射雷射光。藉由將發光元件1配置於規定位置,雖無法直接視認發光元件1之一對電極5,但可對一對電極5間進行雷射照射。此時,考慮到雷射照射之偏移,較佳為將一對電極5之間設定為較雷射之點徑寬1.5倍至5倍左右。Here, for a laser irradiation method, a plurality of light-emitting
又,作為不同之方法,較佳為如下方法,即,首先於準備中間物之步驟中辨識發光元件1之一對電極5,於形成一對配線之步驟中,對在準備中間物之步驟中辨識之發光元件1的一對電極5之間照射雷射光。如此,藉由預先辨識發光元件1之一對電極5之位置,來考慮發光元件1沿上下方向之之偏移或發光元件1之旋轉,能夠對適當之位置照射雷射光,故而能夠將一對電極5間設定得窄,從而使用小型發光元件1。
於形成一對配線之步驟後,亦可進而包含至少利用絕緣構件60覆蓋一對電極5之步驟。由於亦存在一對電極5因雷射剝蝕而露出之情況,故而藉由利用絕緣構件60覆蓋一對電極5可防止短路。絕緣構件60不僅覆蓋一對電極5,而且亦可覆蓋一對配線20、第2被覆構件50等。較佳為,於利用絕緣構件60覆蓋一對電極5之步驟中,絕緣構件60被著色。絕緣構件60亦可為透明、半透明、不透明之任一者,但為了確認配線20之連接狀態,較佳為,於測定器之波長區域中或目視時為透明或半透明。測定器較佳為使用分光光度計,例如,分光光度計較佳為使用峰值波長為480 nm之藍色光或520 nm之綠色光、600 nm之紅色光等,但並不限定於該波長。又,絕緣構件60較佳為無色透明,但特佳為著色至可確認於第1被覆構件2等配置有絕緣構件60,或可經由絕緣構件60確認配線20之連接狀態之程度。例如較佳為,絕緣構件60中含有藍色或綠色、紅色等著色材或色素、顏料、染料。絕緣構件60之光透過率例如可設為20%以上95%以下,較佳為30%以上80%以下。絕緣構件60之光透過率係使用透過率測定器。絕緣構件60較佳為膜狀,絕緣構件60之厚度較佳為0.5 μm至100 μm。較佳為,絕緣構件60之大小為具有封裝10之最大直徑之0.5至3倍之最大直徑之圓形、橢圓形、矩形等。Moreover, as a different method, it is preferable to first identify a pair of
(封裝)
封裝10至少具備發光元件1及第1被覆構件2,進而亦可具備第1透光性構件3、第2透光性構件4等。發光元件1於第1面具備一對電極5。第1被覆構件2覆蓋發光元件1之側面,故而只要為絕緣性即可。第1被覆構件2較佳為反射性,但亦可為透光性。反射性之第1被覆構件2例如可使用矽酮樹脂中含有氧化矽及白色之氧化鈦60 wt%左右之構件等,可藉由壓縮成形、轉注成形、射出成形、印刷、噴霧等而形成。又,第1被覆構件可成形為板狀,形成為切斷成規定之大小之長方體。(package)
The
於板狀構件之第1透光性構件3之上塗佈液狀之第2透光性構件4,並將複數個發光元件1分別接著。液狀之第2透光性構件4以相互分離之方式形成。各第2透光性構件4與發光元件1之形狀對應,於俯視時可設為任意之形狀,例如可列舉:正方形、長方形、圓形、橢圓形。再者,相鄰之第2透光性構件4之間隔可根據封裝10之外形及封裝10之安裝個數來適當設定。又,較佳為,第2透光性構件4以覆蓋板狀構件之第1透光性構件3之面積之70%~150%左右的方式形成。A liquid second
若將發光元件1配置於液狀之第1透光性構件3之上,則第2透光性構件沿著4發光元件1之側面上升。藉此,於將發光元件1載置於第1透光性構件3上之狀態下,第2透光性構件4之外表面成為如朝向斜上方般之形狀。例如,將第2透光性構件4與發光元件結合之形態為四角錐台。於將發光元件1配置於第1透光性構件3上之後,根據需要,亦可按壓發光元件1。於配置發光元件1後,藉由將液狀之第2透光性構件4加熱,而形成硬化後之第2透光性構件4。When the light-emitting
再者,於上述中,發光元件1與第1透光性構件3介隔存在於該等之間之第2透光性構件4而接合,但亦可不使用第2透光性構件4而直接接合。即,亦可於將發光元件1載置於第1透光性構件3之後,於該發光元件1之周圍放入液狀之第1透光性構件4。In addition, in the above, the light-emitting
其次,於導光板30之上,以與第1透光性構件3接觸之方式介隔第3透光性構件40而配置封裝10。與上述第2透光性構件4之情形相同,液狀之第3透光性構件40朝向封裝10形成斜上方之外表面,該第3透光性構件40被硬化。第2被覆構件50以一體地覆蓋複數個封裝10之方式設置。第2被覆構件50例如可使用矽酮樹脂中含有氧化矽及白色之氧化鈦60 wt%左右之構件等,可藉由壓縮成形、轉注成形、射出成形、印刷、噴霧等而形成。Next, on the
再者,亦可以覆蓋配置於導光板30上之封裝10之方式覆蓋整個第2被覆構件50,並使第2被覆構件50硬化,之後藉由公知之加工方法以發光元件1之一對電極5露出之方式使第2被覆構件50之厚度變薄。藉此,可獲得規定之厚度之發光裝置100。又,可使各封裝之一對電極5之表面與第2被覆構件50之表面於相同平面對齊,從而能夠容易地印刷金屬膏層25。Furthermore, it is also possible to cover the entire
再者,此處,所謂「板狀」,係指具備能夠載置一個或兩個以上之發光元件之大面積之構件,例如,亦可改稱為片狀、膜狀、層狀等用語。Here, the term "plate shape" refers to a member having a large area on which one or two or more light-emitting elements can be placed.
(發光元件)
作為發光元件1,例如可使用發光二極體等半導體發光元件,可使用能夠發出藍色、綠色、紅色等可見光之發光元件。半導體發光元件具備包含發光層之積層構造體及電極。積層構造體具備形成有電極之側之第1面、及與其相反側之成為光提取面之第2面。(light emitting element)
As the light-emitting
積層構造體包含半導體層,該半導體層包含發光層。進而,亦可具備藍寶石等透光性基板。作為半導體積層體之一例,可包含第1導電型半導體層(例如n型半導體層)、發光層(活性層)及第2導電型半導體層(例如p型半導體層)之3個半導體層。作為能夠發出紫外光或藍色光至綠色光之可見光之半導體層,例如,可由III-V族化合物半導體等半導體材料形成。具體而言,可使用InX AlY Ga1-X-Y N(0≦X,0≦Y,X+Y≦1)等氮化物系之半導體材料。作為能夠發出紅色光之半導體積層體,可使用GaAs、GaAlAs、GaP、InGaAs、InGaAsP等。電極較佳為銅。The laminated structure includes a semiconductor layer including a light-emitting layer. Furthermore, translucent substrates, such as sapphire, may be provided. An example of a semiconductor laminate may include three semiconductor layers of a first conductivity type semiconductor layer (eg, an n-type semiconductor layer), a light-emitting layer (active layer), and a second conductivity type semiconductor layer (eg, a p-type semiconductor layer). The semiconductor layer capable of emitting visible light ranging from ultraviolet light or blue light to green light can be formed of, for example, a semiconductor material such as a group III-V compound semiconductor. Specifically, a nitride-based semiconductor material such as InXAlYGa1 -XYN (0≦ X , 0≦ Y , X+Y≦1) can be used. As the semiconductor laminate capable of emitting red light, GaAs, GaAlAs, GaP, InGaAs, InGaAsP or the like can be used. The electrodes are preferably copper.
(第1被覆構件)
第1被覆構件2例如較佳為以矽酮樹脂、矽酮改性樹脂、環氧樹脂、酚樹脂等熱硬化性樹脂為主成分之樹脂構件。(1st covering member)
The
第1被覆構件2較佳為設為光反射性之樹脂構件。所謂光反射性之樹脂,係指相對於來自發光元件之光之反射率為70%以上之樹脂材料。例如,較佳為白色樹脂等。藉由到達第1被覆構件之光被反射後,朝向發光裝置之發光面,可提高發光裝置之光提取效率。又,作為第1被覆構件2亦可設為透光性之樹脂構件。該情形時之第1被覆構件可使用與下述第1透光性構件相同之材料。The
作為光反射性之樹脂,例如可使用使光反射性物質分散於透光性樹脂而成者。作為光反射性物質,例如,較佳為氧化鈦、氧化矽、氧化鋯、鈦酸鉀、氧化鋁、氮化鋁、氮化硼、莫來石等。光反射性物質可利用粒狀、纖維狀、薄板片狀等,尤其是纖維狀者由於亦可期待降低第1被覆構件之熱膨脹率之效果,故而較佳。As the light-reflective resin, for example, a light-reflective material can be used in a light-transmitting resin. As a light-reflecting substance, for example, titanium oxide, silicon oxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, etc. are preferable. As the light-reflecting material, granular, fibrous, and thin sheet shapes can be used. In particular, a fibrous material is preferable because the effect of reducing the thermal expansion coefficient of the first covering member can be expected.
於第1被覆構件例如由包含如光反射性物質般之填料之樹脂構件構成之情形時,被照射雷射之表面之樹脂成分藉由剝蝕被去除後於表面露出填料。又,藉由使雷射光之照射點於表面上連續或逐次移動,而沿移動方向形成條紋狀之槽。該槽根據雷射光之照射點徑,例如形成為10~100 μm左右,典型而言40 μm之寬度,0.1~3 μm之深度。In the case where the first covering member is composed of, for example, a resin member containing a filler such as a light-reflecting substance, the resin component on the surface irradiated with the laser is removed by ablation, and the filler is exposed on the surface. In addition, by continuously or successively moving the irradiation point of the laser light on the surface, stripe-shaped grooves are formed along the moving direction. The groove is formed to be about 10 to 100 μm, for example, with a width of 40 μm and a depth of 0.1 to 3 μm typically, depending on the diameter of the irradiation spot of the laser light.
(第1透光性構件)
第1透光性構件3配置於發光元件之第2面。第1透光性構件3之材料可使用樹脂、玻璃等。作為樹脂,可使用矽酮樹脂、矽酮改性樹脂、環氧樹脂、酚樹脂等熱硬化性樹脂、聚碳酸酯樹脂、丙烯酸系樹脂、甲基戊烯樹脂、聚降冰片烯樹脂等熱塑性樹脂。尤其是耐光性、耐熱性優異之矽酮樹脂較佳。(1st translucent member)
The first
第1透光性構件3除了包含上述透光性材料以外,亦可包含螢光體作為波長轉換材料。螢光體使用能夠利用來自發光元件之發光激發者。例如,作為能夠利用藍色發光元件或紫外線發光元件激發之螢光體,可列舉:利用鈰活化之釔鋁石榴石系螢光體(YAG:Ce);利用鈰活化之鎦鋁石榴石系螢光體(LAG:Ce);利用銪及/或鉻活化之含氮之鋁矽酸鈣系螢光體(CaO-Al2
O3
-SiO2
:Eu,Cr);利用銪活化之矽酸鹽系螢光體((Sr,Ba)2
SiO4
:Eu);β賽隆螢光體、CASN系螢光體、SCASN系螢光體等氮化物系螢光體;KSF系螢光體(K2
SiF6
:Mn);硫化物系螢光體、量子點螢光體等。藉由將該等螢光體與藍色發光元件或紫外線發光元件組合,可製造各種顏色之發光裝置(例如白色系發光裝置)。
又,亦可於第1透光性構件3中以調整黏度等目的含有各種填料等。The first
(第2透光性構件)
第2透光性構件4將發光元件1與第1透光性構件3接著。亦可使第2透光性構件含有螢光體或填料。
本發明並不限定於上述實施形態,當然只要不脫離本發明之主旨則可設為任意者。
(第3透光性構件)
第3透光性構件40係具備接著性之透光性之構件。較佳為,第3透光性構件40以封裝10之第1透光性構件3與導光板30接觸之方式配置。較佳為,第3透光性構件40覆蓋第1透光性構件3之側面與第1被覆構件2之側面。其原因在於:藉此,可將自發光元件1出射之光向側方擴展。第3透光性構件40可由與第2透光性構件4相同之材料形成。(2nd translucent member)
The second
(導光板)
導光板30不僅為平板狀,亦可為一部分具有凹部或凸部。可於凹部配置封裝。又,亦可使凹部或凸部具有透鏡等之功能。又,亦可以使導光板30具有分隔性之方式形成凹陷或遮光或反射膜等。又,藉由在配置有封裝之導光板之相反側設置反射膜或遮光膜,可將來自封裝之光經由導光板而向水平方向擴展。(light guide plate)
The
使用圖式對第2實施形態之發光裝置進行說明。圖5係自第2實施形態之發光裝置之導光板側觀察之概略立體圖。圖6係第2實施形態之發光裝置之概略剖視圖。圖7係第2實施形態之發光裝置之概略俯視圖。此處,設為於已經說明之準備中間物之步驟中,將封裝10介隔第3透光構件40配置於導光板31之狀態進行說明。圖式上,封裝及第3透光性構件自圖式之觀察容易度而言將用以表示剖面零件之影線省略。第2實施形態之發光裝置之概略立體圖構成包括縱4個單元、橫4個單元之合計16個單元之1個區段。藉由將複數個該區段組合可形成為任意之大小之面狀光源。第2實施形態之發光裝置之概略剖視圖(圖6)表示1個單元。The light-emitting device of the second embodiment will be described with reference to the drawings. FIG. 5 is a schematic perspective view of the light-emitting device according to the second embodiment, viewed from the side of the light guide plate. FIG. 6 is a schematic cross-sectional view of a light-emitting device according to a second embodiment. FIG. 7 is a schematic plan view of the light-emitting device of the second embodiment. Here, in the step of preparing the intermediate that has already been described, the
對第2實施形態之發光裝置使用事前準備之導光板31。導光板31將配置有封裝10之面側設為平面,將與平面相反側之面側設為背面。自導光板31之背面側主要釋出封裝10之光。於導光板31之1個單元中,於配置有封裝10之區域具有第1凹部31a。於導光板31中相鄰之第1凹部31a之間配置有第2凹部31b,第2凹部31b以縱橫之直線之交叉點為中心而形成,且配置成格子狀。封裝10係於第1透光性構件3上載置有發光元件1,於發光元件1之側面配置有第2透光性構件4,第1被覆構件2覆蓋第2透光性構件4而配置。第1凹部31a於俯視時為四角錐台形狀,於剖面觀察時係開口上方較底面側更寬口之梯形。第1凹部31a係開口上方之開口面積大於底面積。以四角錐台形之底部與第1透光性構件3相接之方式配置有封裝10。封裝10之側面配置有第3透光性構件40。於導光板31之第2凹部31b配置有反射構件70。反射構件70之上表面及導光板31之平面利用第2被覆構件50來被覆。反射構件70及第2被覆構件50使用以高效率地反射來自封裝10之光之方式混合有光反射性物質之樹脂,使得來自封裝10之光自導光板31之背面側出射。又,第2凹部31b以來自封裝10之光容易自導光板31之背面側出射之方式設置傾斜,較佳為自導光板31之背面向垂直方向提取光之傾斜角度。於第2被覆構件50上設置有配線21。第1配線21a與封裝10之第1電極5a電性連接,第2配線21b與封裝10之第2電極5b電性連接,該等連接部分藉由絕緣構件60而被覆。此時,第2凹部31b係相鄰之第1凹部31a之間,即,單元與單元之連接處最深。由於在該第2凹部31b內配置反射構件70,故而伴隨用於反射構件70之樹脂之硬化而發生樹脂之收縮(凹痕),容易於第2凹部31b之反射構件70之上表面產生彎曲之凹陷。因此,有於印刷配線21等時容易斷線之虞,故而為了防止該情況而於配線21之一部分設置寬幅部21c。即便配線21不斷線,亦有於印刷配線21時產生模糊或配線變細、或者電阻上升之虞。因此較佳為,於第2凹部31b之最凹陷之部分附近或單元與單元之連接處設置配線21的寬幅部21c。又,配線21之寬幅部21c並不限於圓形、橢圓形狀,可設為矩形或多邊形,且並不限於1個,亦可設為複數個,進而亦可代替該等設為複數線。於在單元與單元之連接處設置複數個寬幅部21c之情形時,較佳為將複數個寬幅部21c配置成大致直線狀。The
導光板31之背面較佳為於第1凹部31a之相反側設置第3凹部31c。較佳為,該第3凹部31c例如為圓錐狀、多角錐狀。其原因在於:藉由使第3凹部31c為圓錐形狀等而使自封裝10出射之光經由導光板31向水平方向或傾斜方向擴展。亦可於第3凹部31c設置遮光構件80。由於自封裝10出射之光係正上方出射最強,故而整體上觀察導光板31時容易產生發光不均。因此,藉由在第3凹部31c設置遮光構件80,可抑制自封裝10出射之正上方之光而減少發光不均。遮光構件80亦可覆蓋整個第3凹部31c,但較佳為僅第3凹部31c之一部分,例如第3凹部31c之深度1/4至3/4左右。較佳為,於後視導光板31時遮光構件80與第1凹部31a相同至2倍左右地被覆。於第3凹部31c設置遮光構件80之後之第3凹部31c於後視時,較佳為圓錐台形狀。It is preferable that the back surface of the
由此,導光板31具備配置有發光元件1之複數個第1凹部31a、及配置於相鄰之第1凹部31a之間之第2凹部31b,第2凹部31b配置有反射構件70,且配置有覆蓋反射構件70之第2被覆構件50,配線21配置於第2被覆構件50上。配置於第2凹部31b上之配線21較佳為具備寬度較配置於第1凹部31a上之配線21寬之部分、寬幅部21c。As a result, the
使用圖式對第3實施形態之發光裝置進行說明。圖8係第3實施形態之發光裝置之概略俯視圖。
第3實施形態之發光裝置除了第2實施形態之配線不同以外採用大致相同之形態。配線22於橫向上相鄰之封裝10之間,尤其是相鄰之封裝10之中間之位置設置寬幅部22c。配線22於橫向之中央附近,且於相鄰之封裝10之間設置彎曲部,為具有階差之直線狀,於與相鄰之封裝10之中間之位置偏離的部位設置彎曲部。藉由配線22彎曲可抑制印刷時之模糊或斷線。又,於橫向上與配置有封裝10之側不同之側之配線22設置線寬較寬之配線部22d。藉由擴大配線22之線寬可降低電阻,或防止斷線。配線部22d之橫向之長度並無特別限制,但較佳為延伸至上下方向之寬幅部22c之附近。The light-emitting device of the third embodiment will be described with reference to the drawings. FIG. 8 is a schematic plan view of a light-emitting device according to a third embodiment.
The light-emitting device of the third embodiment has substantially the same configuration except for the wiring of the second embodiment. The
參照圖9對第4實施形態之發光裝置進行說明。圖9係第4實施形態之發光裝置之概略剖視圖。此處,設為於已經說明之準備中間物之步驟中,將封裝10介隔第3透光構件40配置於導光板30之狀態進行說明。再者,發光元件1及第1透光性構件4自圖式之觀察容易度而言將用以表示剖面零件之影線省略。
第4實施形態之發光裝置與其他實施形態之不同點在於:將封裝10配置於設置在導光板30之貫通孔30A。再者,貫通孔30A針對所設置之每個封裝10而形成於導光板30。封裝10具備發光元件1、介隔第2透光性構件4而設置於發光元件1之第1透光性構件3、設置於第1透光性構件3之第1光反射膜13、及介隔第2透光性構件4而設置於發光元件1之側面側之第1被覆構件2。而且,封裝10介隔第3透光性構件40而設置於導光板30。又,較佳為,利用第2被覆構件50覆蓋配置於導光板30上之封裝10之側方。較佳為,第2被覆構件50之厚度較封裝10之厚度薄,但亦可相同或較其厚。再者,為了設置封裝10,亦可介隔將形成於導光板30之貫通孔30A之一個孔開口蓋住之作業片材設置封裝10。A light-emitting device according to a fourth embodiment will be described with reference to FIG. 9 . FIG. 9 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment. Here, in the step of preparing the intermediate that has already been described, the
而且,設置於封裝10之第1透光性構件3之第1光反射膜13作為一例,以與導光板30之表面成為同一平面之方式形成。第1光反射膜13係將光反射或遮擋者。第1光反射膜13較佳為由將自第1透光性構件3送來之光遮擋或反射80%以上之材料形成。作為第1光反射膜13,可使用包含金屬之單層膜、包含金屬之多層膜、或將2種以上之介電體積層複數個而成之包含介電體之多層膜(介電體多層膜)。第1光反射膜13作為一例,可藉由濺鍍法而形成。第1光反射膜13於俯視時,亦可具有與第1透光性構件3相同之面積,或者大於第1透光性構件3之面積。其原因在於:藉由使第1透光性構件3之大小變大,可將來自發光元件1之向正上方之光朝側方導光。於使第1光反射膜13為較第1透光性構件3大之面積之情形時,較佳為使用板狀之第1光反射膜13。Moreover, the 1st
又,於預先形成第1光反射膜13,利用接著材連接之情形時,例如,可將丙烯酸系、胺基甲酸酯系、苯乙烯系、環氧系、聚醯亞胺系、矽酮系、BT樹脂(bismaleimide triazine resin,雙馬來醯亞胺三嗪樹脂)系、酯系、醚系、尿素系、聚醯胺系、酚系、纖維素衍生物之接著劑單獨使用或組合使用。
進而,於使用介電體多層膜之情形時,例如可使用DBR(distributed Bragg reflector:分佈布拉格反射)膜。作為第1光反射膜13,其中較佳為使用包含介電體多層膜之膜。若為介電體多層膜,則與由金屬等形成之反射膜相比,來自透光片之光之吸收亦較少,可有效率地反射光。於使用金屬膜與介電體多層膜之兩者作為第1光反射膜13之情形時,可自所設置之面起依次配置介電體多層膜與金屬膜。又,第1光反射膜13於使用金屬膜之情形時可使用鋁、銀等單體或合金。
再者,於發光裝置中,其他構成與已經說明之構成相同。In addition, when the first
又,於各實施形態中所說明之發光裝置中,封裝10之第1透光性構件3之構成亦可為如圖10A及圖10B所示之形態。圖10A及圖10B係分別模式性地表示各實施形態之封裝之變化例之模式圖。圖式上,發光元件自圖式之觀察容易度而言將用以表示剖面零件之影線省略。
於封裝10A中,第1透光性構件3A以覆蓋發光元件1之側面及第2面之方式形成。該第1透光性構件3A之材質等與已經說明者相同。藉由第1透光性構件3A遍及發光元件1之上表面即第2面及側面形成,而容易將光自發光元件1送至導光板30之較遠之部分。又,於封裝10B中,亦可於設置在發光元件1之側面及第2面之第1透光性構件3A之下表面以及發光元件1之下表面,以露出發光元件1之元件電極5之方式形成第2光反射膜14。第2光反射膜14可使用能夠進行擴散反射之白樹脂,或者可由與已經說明之第2被覆構件相同之構件形成。於封裝10B中,藉由具備第2光反射膜14,能夠進一步提高自導光板2側照射之來自發光元件1之光之提取效率。
再者,於將圖10A及圖10B所示之封裝10A、10B之任一者設置於導光板30而使用之情形時,會以於第1透光性構件3A之上表面設置第1光反射膜13之狀態使用。Moreover, in the light-emitting device demonstrated in each embodiment, the structure of the 1st
其次,參照圖11對第5實施形態之發光裝置進行說明。圖11係第5實施形態之發光裝置之概略剖視圖。此處,設為於已經說明之準備中間物之步驟中,將封裝10介隔第3透光構件40配置於導光板31之狀態進行說明。圖式上,封裝及第3透光性構件自圖式之觀察容易度而言將用以表示剖面零件之影線省略。於第5實施形態之發光裝置中,與圖6所示之第2實施形態之發光裝置之不同點在於:在第1配線21a形成第1輔助配線21a1、於第2配線21b形成第2輔助配線21b1。即,於第5實施形態之發光裝置中,存在如下情況:填充至形成於導光板31之第2凹部31b之反射構件70或第2被覆構件50之一者或兩者的樹脂材料於硬化時收縮(凹痕),而導致於上表面產生彎曲之凹陷。因此,藉由在第1配線21a設置第1輔助配線21a1,並且於第2配線21b設置第2輔助配線21b1,而保持平坦性。
又,由於在第2被覆構件50之上表面產生彎曲之凹陷,故而有第1配線21a變細或變薄,或者電阻變高之虞。因此,藉由在第1配線21a設置第1輔助配線21a1,並且於第2配線21b設置第2輔助配線21b1,可降低電阻,或防止斷線。Next, a light-emitting device according to a fifth embodiment will be described with reference to FIG. 11 . FIG. 11 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment. Here, in the step of preparing the intermediate that has already been described, the
此處使用之第1輔助配線21a1藉由將與第1配線21a相同之寬度且相同之厚度之材料重疊形成,而使樹脂材料之凹陷接近平坦。又,第2輔助配線21b1亦與第1輔助配線21a1相同地,藉由將與第2配線21b相同之寬度且相同之厚度之材料重疊形成,而使樹脂材料之凹陷接近平坦。再者,第1輔助配線21a1及第2輔助配線21b1亦可以成為2層以上之複數層之方式形成,以能夠保持平坦性。The 1st auxiliary wiring 21a1 used here is formed by overlapping the material of the same width and the same thickness as the
又,第1輔助配線21a1及第2輔助配線21b1亦可使配線寬度形成得較第1配線21a及第2配線21b寬。而且,第1輔助配線21a1以第1配線21a之長度之50%以上之長度形成,且以可使凹陷之部分平坦之範圍形成。第2輔助配線21b1之長度亦相同地以第2配線21b之長度之50%以上之長度形成。再者,第1輔助配線21a1與第2輔助配線21b1亦可形成為相同之長度或形成為各不相同之長度。
第1輔助配線21a1及第2輔助配線21b1可以與第1配線21a及第2配線21b相同之方式藉由印刷等形成。因此較佳為,於最凹陷之部分附近或單元與單元之連接處將第1輔助配線21a1及第2輔助配線21b1設置於第1配線21a及第2配線21b。In addition, the first auxiliary wiring 21a1 and the second auxiliary wiring 21b1 may be formed to have a wider wiring width than the
其次,參照圖12對第6實施形態之發光裝置進行說明。圖12係第6實施形態之發光裝置之概略剖視圖。此處,設為於已經說明之準備中間物之步驟中,將封裝10介隔第3透光構件40配置於導光板31之狀態進行說明。圖式上,封裝及第3透光性構件自圖式之觀察容易度而言將用以表示剖面零件之影線省略。於第6實施形態之發光裝置100D中,與圖6之第2實施形態之發光裝置之不同點在於:在導光板31之第2凹部31b形成第2被覆構件50,並且沿著形成於導光板31之第2凹部31b之形狀使第3光反射膜15形成於與導光板31之光放射側相反側之表面。
第3光反射膜15以將第1凹部31a除外覆蓋導光板31之一側表面之方式設置。較佳為,第3光反射膜15例如由將光遮擋或反射80%以上之材料形成。作為第3光反射膜15,可使用包含金屬之單層膜、包含金屬之多層膜、或將2種以上之介電體積層複數個而成之包含介電體之多層膜(介電體多層膜)。又,第3光反射膜15作為一例,可藉由濺鍍法而形成。該第3光反射膜15可使用與已經說明之第1光反射膜相同之材料及相同之形成方法。Next, the light-emitting device of the sixth embodiment will be described with reference to FIG. 12 . FIG. 12 is a schematic cross-sectional view of a light-emitting device according to a sixth embodiment. Here, in the step of preparing the intermediate that has already been described, the
而且,發光裝置100D係將第2被覆構件50填充至導光板31之第2凹部31b而形成。發光裝置100D亦可經由連接基板90而與發光元件1之電極5電性連接。
配線基板90於基材具備配線層91,且為了保護配線層91而具備包含絕緣材料之被覆層92。配線基板90具備平板狀之支持構件及配置於支持構件之表面及/或內部之配線層91。再者,配線基板90係根據發光元件1之數量、元件電極之構成、大小來設定電極之形狀、大小等構造。Furthermore, the light-emitting
配線基板90之支持構件較佳為使用絕緣性材料,且較佳為使用不易使自發光元件1出射之光或外界光等透過之材料。配線基板90亦可為具有某程度之強度之材料,或用作片材、可撓性基板之材料。具體而言,可列舉:氧化鋁、氮化鋁、莫來石等陶瓷、酚樹脂、環氧樹脂、聚醯亞胺樹脂、BT樹脂(bismaleimide triazine resin)、聚鄰苯二甲醯胺(PPA)等樹脂。The support member of the
配線層91具備電性連接於封裝10之第1電極5a之第1配線91a、及電性連接於封裝10之第2電極5b之第2配線91b。該等第1配線91a及第2配線91b所形成之位置不同,但材質等與已經說明者相比不變。而且,配線層91除了電極5之位置以外藉由被覆層92而被覆。
被覆層92係保護配線層91者。被覆層92以於封裝10之電極5之位置形成開口92a而覆蓋配線層91之方式設置。被覆層92例如由使用聚醯亞胺作為基材之絕緣構件而形成。而且,被覆層92例如藉由網版印刷等而覆蓋配線層91,且以經由遮罩而於電極5之位置設置開口92a之方式形成。
再者,配線基板90之配線層91於與封裝10之第1電極5a及第2電極5b電性連接之前,以於已經說明之形成一對配線之步驟中不短路之方式形成。
發光裝置100D由於具備如以上之構成,故而藉由第3光反射膜15,可不降低來自導光板31之光之照射效率地使用。The
其次,參照圖13對第7實施形態之發光裝置進行說明。圖13係第7實施形態之發光裝置之概略剖視圖。再者,對已經說明之構成標註相同之符號,並省略說明。又,此處,設為於已經說明之準備中間物之步驟中,將封裝10介隔第3透光構件40配置於導光板31之狀態進行說明。進而,第1配線21a及第2配線21b係藉由形成一對配線之步驟而形成,該步驟係對由金屬膏層形成之配線部分照射雷射光將金屬膏層之一部分去除而形成。
於第7實施形態之發光裝置100E中,不同點在於:為了使於第2被覆構件50產生之凹陷平坦而以成為2層之方式設置絕緣構件60。
即,發光裝置100E具備導光板31、填充至導光板31之第2凹部31b之第2被覆構件50、具有設置於導光板31之第1凹部31a之發光元件1之封裝10、與發光元件1之電極5分別連接且形成於第2被覆構件50之上之第1配線21a及第2配線21b、以覆蓋第1配線21a及第2配線21b且將外部連接部開口之方式設置之絕緣構件60之絕緣膜60a、以及與第2被覆構件50硬化時收縮而形成之凹陷部分對應設置之絕緣構件60之輔助絕緣膜60b。
如此,於發光裝置100E中,藉由利用絕緣膜60a及輔助絕緣膜60b以成為2層之方式覆蓋第2被覆構件50之凹陷部分,可確保平坦性。因此,於發光裝置100E中,可提高各構件之塗佈精度,實現作業速度之效率化(例如,UPH:unite power hour)。輔助絕緣膜60b並不限於1層,亦可設為2層以上。又,絕緣膜60a只要覆蓋第2被覆構件50及一對配線21之至少一部分即可。例如,絕緣膜60a以將進行一對配線21之電性連接之部分開口之狀態形成。Next, the light-emitting device of the seventh embodiment will be described with reference to FIG. 13 . 13 is a schematic cross-sectional view of a light-emitting device according to a seventh embodiment. In addition, the same code|symbol is attached|subjected to the structure already demonstrated, and description is abbreviate|omitted. In addition, here, in the process of preparing an intermediate material already demonstrated, the state where the
再者,於第1實施形態至第7實施形態中,圖式之關係上,將明示形成有第2被覆構件50之構成部分之圖、或明示形成有第2被覆構件50及反射構件70之構成部分之圖混合示出。然而,於各實施形態中,當然亦可為於導光板30、31形成有第2被覆構件50之構成,或者以於導光板30、31具備第2被覆構件50及反射構件70之方式構成之任一構成。
又,於各實施形態中,亦可以具備寬幅部21c、22c,或具備絕緣膜60a及/或輔助絕緣膜60b之方式形成。In addition, in the 1st to 7th embodiment, in the relationship of the drawings, the diagrams that clearly show the constituent parts of the
1:發光元件
2:第1被覆構件
3:第1透光性構件
3A:第1透光性構件
4:第2透光性構件
5:電極
5a:第1電極
5b:第2電極
10:封裝
10A:封裝
10B:封裝
13:第1光反射膜
14:第2光反射膜
15:第3光反射膜
20:配線
20a:第1配線
20b:第2配線
21:配線
21a:第1配線
21a1:第1輔助配線
21b:第2配線
21b1:第2輔助配線
21c:寬幅部
22:配線
22c:寬幅部
22d:配線部
25:金屬膏層
30:導光板
30A:貫通孔
31:導光板
31a:第1凹部
31b:第2凹部
31c:第3凹部
40:第3透光性構件
50:第2被覆構件
60:絕緣構件
60a:絕緣膜
60b:輔助絕緣膜
70:反射構件
80:遮光構件
90:配線基板
91a:第1配線
91b:第2配線
92:被覆層
92a:開口
100:發光裝置
100D:發光裝置
100E:發光裝置1: Light-emitting element
2: The first covering member
3: 1st
圖1A係自實施形態之封裝之斜上方觀察之概略立體圖。 圖1B係實施形態之封裝之概略仰視圖。 圖1C係實施形態之封裝之概略剖視圖。 圖2A係說明實施形態之發光裝置之製造方法之概略剖視圖。 圖2B係說明實施形態之發光裝置之製造方法之概略剖視圖。 圖2C係說明實施形態之發光裝置之製造方法之概略剖視圖。 圖2D係說明實施形態之發光裝置之製造方法之概略剖視圖。 圖2E係說明實施形態之發光裝置之製造方法之概略剖視圖。 圖3A係說明實施形態之發光裝置之製造方法之概略仰視圖。 圖3B係說明實施形態之發光裝置之製造方法之概略仰視圖。 圖3C係說明實施形態之發光裝置之製造方法之概略仰視圖。 圖3D係說明實施形態之發光裝置之製造方法之概略仰視圖。 圖4A係實施形態之發光裝置之概略俯視圖。 圖4B係實施形態之發光裝置之概略立體圖。 圖5係自第2實施形態之發光裝置之導光板側觀察之概略立體圖。 圖6係第2實施形態之發光裝置之概略剖視圖。 圖7係第2實施形態之發光裝置之概略俯視圖。 圖8係第3實施形態之發光裝置之概略俯視圖。 圖9係第4實施形態之發光裝置之概略剖視圖。 圖10A係模式性地表示各實施形態之封裝之變化例之模式圖。 圖10B係模式性地表示各實施形態之封裝之變化例之模式圖。 圖11係第5實施形態之發光裝置之概略剖視圖。 圖12係第6實施形態之發光裝置之概略剖視圖。 圖13係第7實施形態之發光裝置之概略剖視圖。FIG. 1A is a schematic perspective view of the package of the embodiment viewed from obliquely above. FIG. 1B is a schematic bottom view of the package of the embodiment. FIG. 1C is a schematic cross-sectional view of the package of the embodiment. 2A is a schematic cross-sectional view illustrating a method of manufacturing the light-emitting device according to the embodiment. 2B is a schematic cross-sectional view illustrating a method of manufacturing the light-emitting device according to the embodiment. 2C is a schematic cross-sectional view illustrating a method of manufacturing the light-emitting device according to the embodiment. 2D is a schematic cross-sectional view illustrating a method of manufacturing the light-emitting device of the embodiment. 2E is a schematic cross-sectional view illustrating a method of manufacturing the light-emitting device according to the embodiment. 3A is a schematic bottom view illustrating a method of manufacturing the light-emitting device according to the embodiment. 3B is a schematic bottom view illustrating a method of manufacturing the light-emitting device of the embodiment. 3C is a schematic bottom view illustrating a method of manufacturing the light-emitting device according to the embodiment. 3D is a schematic bottom view illustrating a method of manufacturing the light-emitting device of the embodiment. FIG. 4A is a schematic plan view of the light-emitting device according to the embodiment. 4B is a schematic perspective view of the light-emitting device of the embodiment. FIG. 5 is a schematic perspective view of the light-emitting device according to the second embodiment, viewed from the side of the light guide plate. FIG. 6 is a schematic cross-sectional view of a light-emitting device according to a second embodiment. FIG. 7 is a schematic plan view of the light-emitting device of the second embodiment. FIG. 8 is a schematic plan view of a light-emitting device according to a third embodiment. FIG. 9 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment. FIG. 10A is a schematic diagram schematically showing a modification of the package of each embodiment. FIG. 10B is a schematic diagram schematically showing a modification of the package of each embodiment. FIG. 11 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment. FIG. 12 is a schematic cross-sectional view of a light-emitting device according to a sixth embodiment. 13 is a schematic cross-sectional view of a light-emitting device according to a seventh embodiment.
10:封裝 10: Package
20:配線 20: Wiring
20a:第1配線 20a: 1st wiring
20b:第2配線 20b: 2nd wiring
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