TWI773543B - Powder atomic layer deposition machine for reducing powder adhesion - Google Patents
Powder atomic layer deposition machine for reducing powder adhesion Download PDFInfo
- Publication number
- TWI773543B TWI773543B TW110136123A TW110136123A TWI773543B TW I773543 B TWI773543 B TW I773543B TW 110136123 A TW110136123 A TW 110136123A TW 110136123 A TW110136123 A TW 110136123A TW I773543 B TWI773543 B TW I773543B
- Authority
- TW
- Taiwan
- Prior art keywords
- cavity
- powder
- cover
- space
- included angle
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
本發明有關於一種可減少粉末沾黏的粉末原子層沉積機台,可避免在進行原子層沉積的過程中,造成粉末沾黏在腔體或蓋體的內表面。The present invention relates to a powder atomic layer deposition machine capable of reducing powder sticking, which can avoid powder sticking to the inner surface of a cavity or a cover during the process of atomic layer deposition.
奈米顆粒(nanoparticle)一般被定義為在至少一個維度上小於100奈米的顆粒,奈米顆粒與宏觀物質在物理及化學上的特性截然不同。一般而言,宏觀物質的物理特性與本身的尺寸無關,但奈米顆粒則非如此,奈米顆粒在生物醫學、光學和電子等領域都具有潛在的應用。Nanoparticles are generally defined as particles smaller than 100 nanometers in at least one dimension that are physically and chemically distinct from macroscopic substances. In general, the physical properties of macroscopic substances are independent of their size, but this is not the case for nanoparticles, which have potential applications in fields such as biomedicine, optics, and electronics.
量子點(Quantum Dot)是半導體材料的奈米顆粒,目前研究的半導體材料為II-VI材料,如ZnS、CdS、CdSe等,其中又以CdSe最受到矚目。量子點的尺寸通常在2至50奈米之間,量子點被紫外線照射後,量子點中的電子會吸收能量,並從價帶躍遷到傳導帶。被激發的電子從傳導帶回到價帶時,會通過發光釋放出能量。Quantum Dot (Quantum Dot) is a nanoparticle of semiconductor material. The currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc. Among them, CdSe has attracted the most attention. The size of quantum dots is usually between 2 and 50 nanometers. When the quantum dots are irradiated with ultraviolet light, the electrons in the quantum dots absorb energy and transition from the valence band to the conduction band. Excited electrons release energy by emitting light as they travel from the conduction band back to the valence band.
量子點的能隙與尺寸大小相關,量子點的尺寸越大能隙越小,經照射後會發出波長較長的光,量子點的尺寸越小則能隙越大,經照射後會發出波長較短的光。例如5到6奈米的量子點會發出橘光或紅光,而2到3奈米的量子點則會發出藍光或綠光,當然光色還需取決於量子點的材料組成。The energy gap of quantum dots is related to the size. The larger the size of the quantum dot, the smaller the energy gap, and it will emit light with a longer wavelength after irradiation. The smaller the size of the quantum dot, the larger the energy gap, and the wavelength will be emitted after irradiation. shorter light. For example, quantum dots of 5 to 6 nanometers will emit orange or red light, while quantum dots of 2 to 3 nanometers will emit blue or green light. Of course, the light color depends on the material composition of the quantum dots.
應用量子點的發光二極體(LED)產生的光接近連續光譜,同時具有高演色性,並有利於提高發光二極體的發光品質。此外亦可透過改變量子點的尺寸調整發射光的波長,使得量子點成為新一代發光裝置及顯示器的發展重點。Light emitting diodes (LEDs) using quantum dots produce light close to a continuous spectrum, and at the same time have high color rendering properties, which are beneficial to improve the luminous quality of light emitting diodes. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, making the quantum dots become the focus of the development of the new generation of light-emitting devices and displays.
量子點雖然具有上述的優點及特性,但在應用或製造的過程中容易產生團聚現象。此外量子點具有較高的表面活性,並容易與空氣及水氣發生反應,進而縮短量子點的壽命。Although quantum dots have the above-mentioned advantages and characteristics, they are prone to agglomeration in the process of application or manufacture. In addition, quantum dots have high surface activity and easily react with air and water vapor, thereby shortening the life of quantum dots.
具體來說,將量子點製作成為發光二極體的密封膠時,可能會產生團聚效應,而降低量子點的光學性能。此外,量子點在製作成發光二極體的密封膠後,外界的氧或水氣仍可能會穿過密封膠而接觸量子點的表面,導致量子點氧化,並影響量子點及發光二極體的效能或使用壽命。量子點表面的缺陷及懸空鍵(dangling bonds)亦可能造成非輻射復合(non-radiative recombination),同樣會影響量子點的發光效率。Specifically, when quantum dots are used as sealants for light-emitting diodes, agglomeration effects may occur, reducing the optical properties of quantum dots. In addition, after the quantum dots are made into the sealant of the light-emitting diodes, the external oxygen or moisture may still pass through the sealant and contact the surface of the quantum dots, resulting in oxidation of the quantum dots and affecting the quantum dots and light-emitting diodes. performance or service life. Defects and dangling bonds on the surface of quantum dots may also cause non-radiative recombination, which also affects the luminous efficiency of quantum dots.
目前業界主要透過原子層沉積(atomic layer deposition,ALD)在量子點的表面形成一層奈米厚度的薄膜,或者是在量子點的表面形成多層薄膜,以形成量子井結構。At present, the industry mainly uses atomic layer deposition (ALD) to form a nanometer-thick film on the surface of the quantum dot, or to form a multi-layer film on the surface of the quantum dot to form a quantum well structure.
原子層沉積可以在基板上形成厚度均勻的薄膜,並可有效控制薄膜的厚度,理論上亦適用於三維的量子點。量子點靜置在承載盤時,相鄰的量子點之間會存在接觸點,使得原子層沉積的前驅物氣體無法接觸這些接觸點,並導致無法在所有的奈米顆粒的表面皆形成厚度均勻的薄膜。Atomic layer deposition can form a thin film with uniform thickness on the substrate, and can effectively control the thickness of the thin film. It is also suitable for three-dimensional quantum dots in theory. When the quantum dots are placed on the carrier plate, there will be contact points between adjacent quantum dots, so that the precursor gas of atomic layer deposition cannot contact these contact points, and it is impossible to form uniform thickness on the surface of all nanoparticles. film.
為了解決上述先前技術的問題,本發明提出一種可減少粉末沾黏的粉末原子層沉積機台,可於原子層沉積製程中充份攪拌粉末,使得粉末擴散到真空腔體的反應空間的各個區域,以利於在各個粉末的表面上形成厚度均勻的薄膜。In order to solve the above-mentioned problems of the prior art, the present invention proposes a powder atomic layer deposition machine that can reduce powder sticking, and can fully stir powder during the atomic layer deposition process, so that the powder can be diffused into each area of the reaction space of the vacuum chamber , in order to facilitate the formation of a thin film of uniform thickness on the surface of each powder.
本發明的一目的,在於提供一種可減少粉末沾黏的粉末原子層沉積機台,主要包括一驅動單元、一軸封裝置及一真空腔體,其中驅動單元經由軸封裝置連接並帶動真空腔體轉動。真空腔體包括一腔體及一蓋體,其中蓋體的內表面上設置至少一凹槽,而腔體則具有一空間。當蓋體連接腔體時,蓋體內表面的凹槽會與腔體的空間形成一反應空間。An object of the present invention is to provide a powder atomic layer deposition machine that can reduce powder adhesion, which mainly includes a driving unit, a shaft sealing device and a vacuum chamber, wherein the driving unit is connected through the shaft sealing device and drives the vacuum chamber. turn. The vacuum cavity includes a cavity and a cover, wherein at least one groove is arranged on the inner surface of the cover, and the cavity has a space. When the cover is connected to the cavity, the groove on the inner surface of the cover forms a reaction space with the space of the cavity.
位於蓋體內表面的凹槽包括一底面及一第一環形斜面,其中底面透過第一環形斜面連接內表面,使得在內表面上凹槽形狀近似一截頂圓錐狀體。透過蓋體及腔體形成特殊形狀的反應空間,可有效避免在進行原子層沉積的過程中,發生粉末沾黏在蓋體及/或腔體的情形。The groove on the inner surface of the cover includes a bottom surface and a first annular inclined surface, wherein the bottom surface is connected to the inner surface through the first annular inclined surface, so that the shape of the groove on the inner surface approximates a truncated cone. The special shaped reaction space is formed through the cover and the cavity, which can effectively avoid the situation that the powder sticks to the cover and/or the cavity during the process of atomic layer deposition.
腔體包括一底部、一第二環形斜面及一內側表面,其中底部透過第二環形斜面連接內側表面。腔體的底部及第二環形斜面可形成近似一截頂圓錐狀體的空間,而腔體的內側表面則形成近似一圓柱體的空間,可進一步防止粉末沾黏在蓋體及/或腔體上。The cavity includes a bottom, a second annular inclined surface and an inner surface, wherein the bottom is connected to the inner surface through the second annular inclined surface. The bottom of the cavity and the second annular inclined surface can form a space similar to a truncated cone, and the inner surface of the cavity can form a space similar to a cylinder, which can further prevent powder from sticking to the cover and/or the cavity superior.
本發明的一目的,在於提供一種可減少粉末沾黏的粉末原子層沉積機台,其中軸封裝置包括一內管體及一外管體。內管體設置在外管體的容置空間內,內管體具有一連接空間用設置至少一抽氣管線、至少一進氣管線及至少一非反應氣體輸送管線。非反應氣體輸送管線及/或進氣管線可連接一延伸管體,並經由延伸管體將前驅物氣體及/或非反應氣體輸送至真空腔體的反應空間。An object of the present invention is to provide a powder atomic layer deposition machine capable of reducing powder adhesion, wherein the shaft sealing device includes an inner tube body and an outer tube body. The inner pipe body is arranged in the accommodating space of the outer pipe body, and the inner pipe body has a connection space for at least one air extraction pipeline, at least one intake pipeline and at least one non-reactive gas transmission pipeline. The non-reactive gas delivery line and/or the gas inlet line can be connected to an extension tube, and the precursor gas and/or the non-reaction gas are delivered to the reaction space of the vacuum chamber through the extension tube.
本發明所述的延伸管體可穿過腔體的空間,並延伸至蓋體的凹槽內。此外,延伸管體的端部及/或管壁上可設置至少一出氣孔,並經由出氣孔將前驅物氣體及/或非反應氣體輸送至反應空間。透過延伸管體的設置,可使得前驅物氣體均勻地擴散至反應空間內,並可使得非反應氣體均勻的吹動反應空間內的粉末,使得粉末擴散至反應空間的各個區域。The extension tube body of the present invention can pass through the space of the cavity and extend into the groove of the cover body. In addition, at least one air outlet can be provided on the end of the extending pipe body and/or the pipe wall, and the precursor gas and/or the non-reactive gas can be delivered to the reaction space through the air outlet. Through the arrangement of the extension tube, the precursor gas can be uniformly diffused into the reaction space, and the non-reactive gas can evenly blow the powder in the reaction space, so that the powder can be diffused to various regions of the reaction space.
為了達到上述的目的,本發明提出一種可減少粉末沾黏的粉末原子層沉積機台,包括:一真空腔體,包括:一腔體,包括一底部及一內側表面,其中底部及內側表面形成一空間;一蓋體,包括一內表面、一底面及一第一環形斜面,其中底面透過第一環形斜面連接內表面,並在蓋體的內表面形成一凹槽,其中蓋體的內表面覆蓋腔體的空間,使得蓋體的凹槽面對空間,並在蓋體及腔體之間形成一反應空間;一軸封裝置,包括一外管體及一內管體,其中外管體具有一容置空間,用以容置內管體,其中外管體連接真空腔體;一驅動單元,連接外管體,並經由外管體帶動真空腔體轉動;至少一抽氣管線,位於軸封裝置的內管體內,流體連接真空腔體的反應空間,並用以抽出反應空間內的一氣體;及至少一進氣管線,位於軸封裝置的內管體內,流體連接真空腔體的反應空間,並用以將一前驅物氣體或一非反應氣體輸送至反應空間。In order to achieve the above object, the present invention provides a powder atomic layer deposition machine capable of reducing powder adhesion, comprising: a vacuum chamber, including: a chamber including a bottom and an inner surface, wherein the bottom and the inner surface are formed a space; a cover body, including an inner surface, a bottom surface and a first annular inclined surface, wherein the bottom surface is connected to the inner surface through the first annular inclined surface, and a groove is formed on the inner surface of the cover body, wherein the The inner surface covers the space of the cavity, so that the groove of the cover faces the space, and a reaction space is formed between the cover and the cavity; a shaft sealing device includes an outer tube body and an inner tube body, wherein the outer tube body The body has an accommodating space for accommodating the inner tube body, wherein the outer tube body is connected to the vacuum chamber body; a driving unit is connected to the outer tube body, and drives the vacuum chamber body to rotate through the outer tube body; It is located in the inner tube body of the shaft sealing device and is fluidly connected to the reaction space of the vacuum chamber, and is used to extract a gas in the reaction space; and at least one intake line is located in the inner tube body of the shaft sealing device and is fluidly connected to the vacuum chamber. The reaction space is used for delivering a precursor gas or a non-reaction gas to the reaction space.
本發明提出另一種可減少粉末沾黏的粉末原子層沉積機台,包括:一真空腔體,包括:一腔體,包括一底部、一環形斜面及一內側表面,其中底部經由環形斜面連接內側表面,並在底部、環形斜面及內側表面之間形成一空間;一蓋體,包括一內表面,蓋體的內表面覆蓋腔體的空間,並在蓋體及腔體之間形成一反應空間;一軸封裝置,包括一外管體及一內管體,其中外管體具有一容置空間,用以容置內管體,其中外管體連接真空腔體;一驅動單元,連接外管體,並經由外管體帶動真空腔體轉動;至少一抽氣管線,位於軸封裝置的內管體內,流體連接真空腔體的反應空間,並用以抽出反應空間內的一氣體;及至少一進氣管線,位於軸封裝置的內管體內,流體連接真空腔體的反應空間,並用以將一前驅物氣體或一非反應氣體輸送至反應空間。The present invention provides another powder atomic layer deposition machine that can reduce powder sticking, including: a vacuum chamber, including: a chamber, including a bottom, an annular inclined surface and an inner surface, wherein the bottom is connected to the inner surface through the annular inclined surface surface, and a space is formed between the bottom, the annular inclined surface and the inner surface; a cover body, including an inner surface, the inner surface of the cover body covers the space of the cavity, and forms a reaction space between the cover body and the cavity ; a shaft sealing device, including an outer tube body and an inner tube body, wherein the outer tube body has an accommodating space for accommodating the inner tube body, wherein the outer tube body is connected to the vacuum chamber; a drive unit is connected to the outer tube body, and drives the vacuum chamber to rotate through the outer tube body; at least one air extraction line is located in the inner tube body of the shaft sealing device, fluidly connected to the reaction space of the vacuum chamber body, and used to extract a gas in the reaction space; and at least one The air inlet line is located in the inner tube body of the shaft sealing device, is fluidly connected to the reaction space of the vacuum chamber, and is used for delivering a precursor gas or a non-reaction gas to the reaction space.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中腔體包括一第二環形斜面,底部經由第二環形斜面連接內側表面。In the powder atomic layer deposition machine capable of reducing powder adhesion, the cavity includes a second annular inclined surface, and the bottom is connected to the inner surface through the second annular inclined surface.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中蓋體的底面與第一環形斜面之間具有一第一夾角,第一環形斜面與腔體的內側表面之間具有一第二夾角,第一夾角介於100度至170度之間,而第二夾角則介於170度至100度之間,腔體的底部與第二環形斜面之間具有一第三夾角,第二環形斜面與腔體的內側表面之間具有一第四夾角,第三夾角介於100度至170度之間,而第四夾角則介於170度至100度之間。The powder atomic layer deposition machine for reducing powder adhesion, wherein a first included angle is formed between the bottom surface of the cover body and the first annular inclined surface, and a first annular inclined surface and the inner surface of the cavity have a first angle. The second included angle, the first included angle is between 100 degrees and 170 degrees, and the second included angle is between 170 degrees and 100 degrees. There is a third included angle between the bottom of the cavity and the second annular inclined surface. A fourth included angle is formed between the two annular inclined surfaces and the inner surface of the cavity, the third included angle is between 100 degrees and 170 degrees, and the fourth included angle is between 170 degrees and 100 degrees.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中腔體的底部面對蓋體的底面,腔體的內側表面為一圓柱狀體,圓柱狀體的周長等於蓋體的第一環形斜面的最大周長。The powder atomic layer deposition machine that can reduce powder adhesion, wherein the bottom of the cavity faces the bottom surface of the cover body, the inner surface of the cavity is a cylindrical body, and the perimeter of the cylindrical body is equal to the third of the cover body. The maximum perimeter of an annular bevel.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中蓋體的底面與第一環形斜面之間具有一第一夾角,第一環形斜面與腔體的內側表面之間具有一第二夾角,第一夾角介於100度至170度之間,而第二夾角則介於170度至100度之間。The powder atomic layer deposition machine for reducing powder adhesion, wherein a first included angle is formed between the bottom surface of the cover body and the first annular inclined surface, and a first annular inclined surface and the inner surface of the cavity have a first angle. The second included angle, the first included angle is between 100 degrees and 170 degrees, and the second included angle is between 170 degrees and 100 degrees.
所述的可減少粉末沾黏的粉末原子層沉積機台,包括一延伸管體連接進氣管線,延伸管體位於反應空間內,並延伸至蓋體的凹槽內。The powder atomic layer deposition machine, which can reduce powder adhesion, includes an extension pipe body connected to the air inlet line, the extension pipe body is located in the reaction space, and extends into the groove of the cover body.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中腔體的底部與環形斜面之間具有一第一夾角,環形斜面與腔體的內側表面之間具有一第二夾角,第一夾角介於100度至170度之間,而第二夾角則介於170度至100度之間。The powder atomic layer deposition machine for reducing powder adhesion, wherein a first included angle is formed between the bottom of the cavity and the annular inclined surface, and a second included angle is formed between the annular inclined surface and the inner surface of the cavity, and the first included angle is The included angle is between 100 degrees and 170 degrees, and the second included angle is between 170 degrees and 100 degrees.
所述的可減少粉末沾黏的粉末原子層沉積機台,其中蓋體的內表面包括一凹槽,蓋體的內表面覆蓋腔體的空間,使得蓋體的凹槽與腔體的空間形成反應空間。The powder atomic layer deposition machine that can reduce powder adhesion, wherein the inner surface of the cover body includes a groove, and the inner surface of the cover body covers the space of the cavity, so that the groove of the cover and the space of the cavity are formed reaction space.
請參閱圖1、圖2、圖3及圖4分別為本發明可減少粉末沾黏的粉末原子層沉積機台一實施例的立體示意圖、部分分解剖面示意圖、剖面示意圖及可減少粉末沾黏的粉末原子層沉積機台的軸封裝置的剖面示意圖。如圖所示,可減少粉末沾黏的粉末原子層沉積機台10主要包括一真空腔體11、一軸封裝置13及一驅動單元15,其中驅動單元15透過軸封裝置13連接並帶動真空腔體11轉動。Please refer to FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , which are respectively a three-dimensional schematic view, a partially exploded cross-sectional schematic view, a cross-sectional schematic view, and a powder-sticking-reducing powder atomic layer deposition machine according to an embodiment of the present invention. Cross-sectional schematic diagram of the shaft sealing device of the powder atomic layer deposition machine. As shown in the figure, the powder atomic
真空腔體11包括一蓋體111及一腔體113,其中蓋體111的一內表面1111用以覆蓋腔體113,並在兩者之間形成反應空間12。具體而言,腔體113包括一底部1131及一內側表面1133,其中底部1131連接內側表面1133,並在兩者之間形成一空間122。The
蓋體111的內表面1111用以連接腔體113,並覆蓋腔體113的空間122,以在蓋體111及腔體113之間形成密閉的反應空間12,用以容置複數顆粉末121,其中真空腔體11靜置時,粉末121會受到重力作用沉積在反應空間12的下半部。粉末121可以是量子點(Quantum Dot),例如ZnS、CdS、CdSe等II-VI半導體材料,而形成在量子點上的薄膜可以是三氧化二鋁(Al2O3)。The
軸封裝置13包括一外管體131及一內管體133,其中外管體131具有一容置空間132,而內管體133則具有一連接空間134,例如外管體131及內管體133可為空心柱狀體。外管體131的容置空間132用以容置內管體133,其中外管體131及內管體133同軸設置。軸封裝置13可以是一般常見的軸封或磁流體軸封,主要用以隔離真空腔體11的反應空間12與外部的空間,以維持反應空間12的真空。The
驅動單元15連接軸封裝置13的一端,並透過軸封裝置13帶動真空腔體11轉動,例如透過外管體131連接真空腔體11,並透過外管體131帶動真空腔體11轉動。The driving
驅動單元15可連接並帶動外管體131及真空腔體11以同一方向持續轉動,例如順時針或逆時針方向持續轉動。在本發明一實施例中,驅動單元15可為馬達,透過至少一齒輪14連接外管體131,並經由齒輪14帶動外管體131及真空腔體11相對於內管體133轉動。The driving
內管體133的連接空間134內可設置至少一非反應氣體輸送管線171、至少一進氣管線173、一加熱器175、一抽氣管線177及/或一溫度感測單元179,如圖2、圖3及圖4所示。At least one non-reactive
抽氣管線177流體連接真空腔體11的反應空間12,並用以抽出反應空間12內的氣體,使得反應空間12為真空狀態,以進行原子層沉積製程。具體而言抽氣管線177可連接一幫浦,並透過幫浦抽出反應空間12內的氣體。The
進氣管線173流體連接真空腔體11的反應空間12,並用以將一前驅物氣體或一非反應氣體輸送至反應空間12,其中非反應氣體可以是氮氣或氬氣等惰性氣體。例如進氣管線173可透過閥件組連接一前驅物氣體儲存槽及一非反應氣體儲存槽,並透過閥件組將前驅物氣體輸送至反應空間12內,使得前驅物氣體沉積在粉末121表面。在實際應用時,進氣管線173可能會將一載送氣體(carrier gas)及前驅物氣體一起輸送到反應空間12內。而後透過閥件組將非反應氣體輸送至反應空間12內,並透過抽氣管線177抽氣,以去除反應空間12內的前驅物氣體。在本發明一實施例中,進氣管線173可連接複數個分枝管線,並分別透過各個分枝管線將不同的前驅物氣體依序輸送至反應空間12內。The
此外進氣管線173可增大輸送至反應空間12的非反應氣體的流量,並透過非反應氣體吹動反應空間12內的粉末121,使得粉末121受到非反應氣體的帶動,而擴散到反應空間12的各個區域。In addition, the
在本發明一實施例中,進氣管線173及非反應氣體輸送管線171都可以用以將非反應氣體輸送至反應空間12,其中進氣管線173輸送的非反應氣體的流量較小,主要用以去除反應空間12內的前驅物氣體,而非反應氣體輸送管線171輸送的非反應氣體的流量較大,主要用以吹動反應空間12內的粉末121。In an embodiment of the present invention, both the
本發明的驅動單元15帶動外管體131及真空腔體11轉動時,內管體133及其內部的非反應氣體輸送管線171、抽氣管線177及進氣管線173不會隨著轉動,有利於提高進氣管線173及/或非反應氣體輸送管線171輸送至反應空間12的非反應氣體及/或前驅物氣體的穩定度。When the driving
加熱器175用以加熱連接空間134及內管體133,並透過加熱器175加熱內管體133內的抽氣管線177、進氣管線173及/或非反應氣體輸送管線171。溫度感測單元179則用以量測加熱器175或連接空間134的溫度,以得知加熱器175的工作狀態。當然在真空腔體11的內部、外部或周圍通常會設置另一個加熱裝置,其中加熱裝置鄰近或接觸真空腔體11,並用以加熱真空腔體11及反應空間12。The
在本發明實施例中,蓋體111的內表面1111可設置一底面1113及一第一環形斜面1115,其中第一環形斜面1115環繞設置在底面1113的周圍。底面1113經由第一環形斜面1115連接蓋體111的內表面1111,並在蓋體111的內表面1111上形成一凹槽1112。In the embodiment of the present invention, the
當蓋體111的內表面1111覆蓋腔體113的空間122時,蓋體111的內表面1111及/或底面1113朝向腔體113的底部1131。蓋體111的凹槽1112會與腔體113的空間122形成反應空間12,其中蓋體111的底面1113約略平行腔體113的底部1131。此外腔體113的底部1131與內側表面1133之間具有一圓角1135,其中圓角1135環繞在腔體113的底部1131的周圍。When the
具體而言,本發明實施例的蓋體111的底面1113及/或腔體113的底部1131的面積小於腔體113的內側表面1133的截面積,而第一環形斜面1115的最大周長則約略與腔體113的內側表面1133的周長相近。Specifically, the area of the
當蓋體111連接腔體113時,蓋體111的第一環形斜面1115的外緣會對齊腔體113的內側表面1133,其中蓋體111的底面1113經由第一環形斜面1115連接腔體113的內側表面1133,以在蓋體111及腔體113之間的反應空間12形成一個整體性的空間。When the
具體而言,蓋體111的底面1113與第一環形斜面1115之間具有一第一夾角a1,而第一環形斜面1115與腔體113的內側表面1133之間則具有一第二夾角a2,其中第一夾角a1介於100度至170度之間,而第二夾角a2則介於170度至100度之間。當然上述第一夾角a1及第二夾角a2的角度範圍僅為本發明一實施例,並非本發明權利範圍的限制。Specifically, there is a first angle a1 between the
在本發明一實施例中,第一環形斜面1115可投射在平行底面1113的虛擬平面上,並形成一虛擬圓環,其中虛擬圓環的內圓與外圓之間的距離與底面1113的半徑的比介於6:1至1:6之間。當然上述第一環形斜面1115與底面1113之間投射長度的範圍僅為本發明一實施例,並非本發明權利範圍的限制。In an embodiment of the present invention, the first annular
本發明實施例的蓋體111與腔體113形成的反應空間12可被區分為第一空間123及一第二空間125,其中第一空間123的截頂圓椎狀體,第二空間125近似圓柱狀體。透過本發明實施例的反應空間12的特殊形狀設計,可有效防止在進行原子層沉積的過程中,造成粉末121沾黏在蓋體111及/或腔體113的表面。The
本發明所述的真空腔體11的反應空間12內具有一延伸管體172,如圖3所示,其中延伸管體172連接進氣管線173及/或非反應氣體輸送管線171,並延伸至蓋體111的凹槽1112或真空腔體11的第一空間123內。延伸管體172的端部及/或管壁上可設置至少一出氣孔1721,並經由出氣孔1721將前驅物氣體或非反應氣體輸送至反應空間12。The
具體而言,本發明主要透過蓋體111及腔體113形成特殊形狀的反應空間12,以減少粉末121沾黏在真空腔體11的表面。如圖5所示,當蓋體111及/或腔體113不具有本發明所述的特殊形狀時,例如蓋體111及腔體113形成的反應空間12為圓柱狀,粉末121往往會沾黏在蓋體111及/或腔體113的角落115位置,並造成粉末121的損耗。相較之下,如圖6所示,當蓋體111及/或腔體113具有本發明所述的特殊形狀時,可大幅減少粉末121沾黏的情形,並可有效減少粉末121不必要的消耗。Specifically, the present invention mainly forms the
在本發明另一實施例中,如圖7及圖8所示,腔體113可包括一底部1131、一內側表面1133及一第二環形斜面1137,其中底部1131透過第二環形斜面1137連接內側表面1133。腔體113的底部1131與第二環形斜面1137之間具有一第三夾角a3,而腔體113的內側表面1133與第二環形斜面1137之間則具有一第四夾角a4,其中第三夾角a3介於100度至170度之間,而第四夾角a4則介於170度至100度之間。In another embodiment of the present invention, as shown in FIGS. 7 and 8 , the
本發明實施例的蓋體111與圖2相同,其中蓋體111與腔體113形成的反應空間12可被區分為第一空間123、一第二空間125及一第三空間127。第一空間123及第三空間127近似截頂圓椎狀體,第二空間125近似圓柱狀體。第一空間123經由第二空間125連接第三空間127,透過本發明實施例的反應空間12的特殊形狀設計,可有效防止粉末121沾黏在蓋體111及/或腔體113的表面。The
此外延伸管體172可穿過反應空間12的第三空間127及第二空間125,並延伸至部份的第一空間123,其中第一空間123為設置在蓋體111上的凹槽1112。In addition, the
在本發明另一實施例中,如圖9所示,腔體113包括一底部1131、一內側表面1133及一環形斜面1139,其中環形斜面1139環繞設置在底部1131的周圍,使得腔體113的底部1131經由環形斜面1139連接內側表面1133,並在底部1131、環形斜面1139及內側表面1133之間形成一空間122。In another embodiment of the present invention, as shown in FIG. 9 , the
蓋體111的內表面1111用以覆蓋腔體113的空間122,並在蓋體111及腔體113之間形成反應空間12。此外蓋體111的內表面1111上亦可設置一底面1113,其中底面1113的周圍環繞設置一圓角1117,底面1113經由圓角1117連接腔體113的內側表面1133,並在蓋體111的內表面1111上形成一凹槽1114,其中蓋體111的凹槽1114與腔體113的空間122形成反應空間12。在本發明實施例中,腔體113的底部1131及環形斜面1139形成的空間近似截頂圓錐狀,而腔體113的內側表面1133及蓋體111的底面1113及/或圓角1117形成的空間則近似圓柱狀體。The
在本發明一實施例中,腔體113的底部1131與環形斜面1139之間具有一第一夾角a1,環形斜面1139與腔體113的內側表面1133之間具有一第二夾角a2,其中第一夾角a1介於100度至170度之間,而第二夾角a2則介於170度至100度之間。In an embodiment of the present invention, there is a first included angle a1 between the bottom 1131 of the
在實際應用時,可進一步在蓋體111的內表面1111、底面1113、第一環形斜面1115、腔體113的底部1131、內側表面1133、第二環形斜面1137及/或環形斜面1139上設置一抗沾黏層,例如抗沾黏層可為聚四氟乙烯(鐵氟龍)、熔融烷基正乙烯酮二聚体或接觸角大於 130°的疏水性材料,可進一步避免粉末121沾黏在真空腔體11的表面。在不同實施例中亦可對蓋體111及腔體113進行電解拋光,使得蓋體111的內表面1111、底面1113、第一環形斜面1115、腔體113的底部1131、內側表面1133、第二環形斜面1137及/或環形斜面1139形成光滑的表面,同樣可減少粉末121的沾黏。In practical application, it can be further provided on the
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included within the scope of the patent application of the present invention.
10:可減少粉末沾黏的粉末原子層沉積機台 11:真空腔體 111:蓋體 1111:內表面 1112:凹槽 1113:底面 1114:凹槽 1115:第一環形斜面 1117:圓角 113:腔體 1131:底部 1133:內側表面 1135:圓角 1137:第二環形斜面 1139:環形斜面 115:角落 12:反應空間 121:粉末 122:空間 123:第一空間 125:第二空間 127:第三空間 13:軸封裝置 131:外管體 132:容置空間 133:內管體 134:連接空間 14:齒輪 15:驅動單元 171:非反應氣體輸送管線 172:延伸管體 1721:出氣孔 173:進氣管線 175:加熱器 177:抽氣管線 179:溫度感測單元 a1:第一夾角 a2:第二夾角 a3:第三夾角 a4:第四夾角 10: Powder atomic layer deposition machine that can reduce powder sticking 11: Vacuum chamber 111: Cover 1111: inner surface 1112: Groove 1113: Bottom 1114: Groove 1115: First annular bevel 1117: rounded corners 113: Cavity 1131: Bottom 1133: Inside Surface 1135: rounded corners 1137: Second annular bevel 1139: Ring Bevel 115: Corner 12: Reaction Space 121: Powder 122: Space 123: First Space 125: Second space 127: Third space 13: Shaft seal device 131: outer tube body 132: accommodating space 133: inner tube body 134: Connect Space 14: Gear 15: Drive unit 171: Non-reactive gas delivery line 172: Extension tube body 1721: Air vent 173: Intake line 175: Heater 177: Exhaust line 179: Temperature Sensing Unit a1: the first included angle a2: Second included angle a3: the third angle a4: Fourth included angle
[圖1]為本發明可減少粉末沾黏的粉末原子層沉積機台一實施例的立體示意體。FIG. 1 is a three-dimensional schematic diagram of an embodiment of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
[圖2]為本發明可減少粉末沾黏的粉末原子層沉積機台一實施例的部分分解剖面示意圖。FIG. 2 is a partially exploded cross-sectional schematic diagram of an embodiment of the powder atomic layer deposition machine capable of reducing powder sticking according to the present invention.
[圖3]為本發明可減少粉末沾黏的粉末原子層沉積機台一實施例的剖面示意圖。3 is a schematic cross-sectional view of an embodiment of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
[圖4]為本發明可減少粉末沾黏的粉末原子層沉積機台的軸封裝置一實施例的剖面示意圖。4 is a schematic cross-sectional view of an embodiment of a shaft sealing device of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
[圖5]為一般粉末原子層沉積機台的蓋體表面的粉末沾黏情形的實際照片。[Fig. 5] is an actual photo of powder adhesion on the cover surface of a general powder atomic layer deposition machine.
[圖6]為本發明可減少粉末沾黏的粉末原子層沉積機台的蓋體表面的粉末沾黏情形的實際照片。FIG. 6 is an actual photo of the powder sticking condition on the surface of the cover body of the powder atomic layer deposition machine capable of reducing powder sticking according to the present invention.
[圖7]為本發明可減少粉末沾黏的粉末原子層沉積機台又一實施例的剖面示意圖。7 is a schematic cross-sectional view of another embodiment of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
[圖8]為本發明可減少粉末沾黏的粉末原子層沉積機台的腔體及蓋體一實施例的立體示意圖。8 is a perspective view of an embodiment of a cavity and a cover of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
[圖9]為本發明可減少粉末沾黏的粉末原子層沉積機台又一實施例的剖面示意圖。9 is a schematic cross-sectional view of another embodiment of a powder atomic layer deposition machine capable of reducing powder adhesion according to the present invention.
10:可減少粉末沾黏的粉末原子層沉積機台 10: Powder atomic layer deposition machine that can reduce powder sticking
11:真空腔體 11: Vacuum chamber
111:蓋體 111: Cover
1113:底面 1113: Bottom
1115:第一環形斜面 1115: First annular bevel
113:腔體 113: Cavity
1131:底部 1131: Bottom
1133:內側表面 1133: Inside Surface
12:反應空間 12: Reaction Space
121:粉末 121: Powder
123:第一空間 123: First Space
125:第二空間 125: Second space
13:軸封裝置 13: Shaft seal device
131:外管體 131: outer tube body
132:容置空間 132: accommodating space
133:內管體 133: inner tube body
134:連接空間 134: Connect Space
171:非反應氣體輸送管線 171: Non-reactive gas delivery line
172:延伸管體 172: Extension tube body
1721:出氣孔 1721: Air vent
173:進氣管線 173: Intake line
175:加熱器 175: Heater
a1:第一夾角 a1: the first included angle
a2:第二夾角 a2: Second included angle
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011254816.9 | 2020-11-11 | ||
CN202011254816.9A CN112391613B (en) | 2020-11-11 | 2020-11-11 | Atomic layer deposition apparatus for forming thin film on powder |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202219302A TW202219302A (en) | 2022-05-16 |
TWI773543B true TWI773543B (en) | 2022-08-01 |
Family
ID=74599813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110136123A TWI773543B (en) | 2020-11-11 | 2021-09-28 | Powder atomic layer deposition machine for reducing powder adhesion |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN112391613B (en) |
TW (1) | TWI773543B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130059073A1 (en) * | 2011-09-03 | 2013-03-07 | Ying-Bing JIANG | Apparatus and Method for making atomic layer deposition on fine powders |
US20170137940A1 (en) * | 2015-11-12 | 2017-05-18 | Anthony F. Zeberoff | Apparatus and method for coating bulk quantities of solid particles |
US20190062914A1 (en) * | 2017-08-24 | 2019-02-28 | Forge Nano, Inc. | Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204058588U (en) * | 2014-06-06 | 2014-12-31 | 华中科技大学 | A kind of device for micro-nano granules finishing |
US9896763B2 (en) * | 2016-05-13 | 2018-02-20 | GM Global Technology Operations LLC | Particle reactor for atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes |
CN107502873B (en) * | 2017-09-30 | 2019-02-15 | 华中科技大学无锡研究院 | A powder-coated atomic layer deposition device |
-
2020
- 2020-11-11 CN CN202011254816.9A patent/CN112391613B/en active Active
-
2021
- 2021-09-28 TW TW110136123A patent/TWI773543B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130059073A1 (en) * | 2011-09-03 | 2013-03-07 | Ying-Bing JIANG | Apparatus and Method for making atomic layer deposition on fine powders |
US20170137940A1 (en) * | 2015-11-12 | 2017-05-18 | Anthony F. Zeberoff | Apparatus and method for coating bulk quantities of solid particles |
US20190062914A1 (en) * | 2017-08-24 | 2019-02-28 | Forge Nano, Inc. | Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof |
Also Published As
Publication number | Publication date |
---|---|
CN112391613B (en) | 2022-05-20 |
CN112391613A (en) | 2021-02-23 |
TW202219302A (en) | 2022-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN114381713B (en) | Powder atomic layer deposition equipment capable of reducing powder adhesion | |
TWI772913B (en) | Atomic layer deposition apparatus for coating particles | |
TWI740732B (en) | Powder atomic layer deposition apparatus with special cover plate | |
TWI759935B (en) | Powder atomic layer deposition device for blowing powders | |
TWI729944B (en) | Powder atomic layer deposition apparatus | |
TWI750836B (en) | Detachable powder atomic layer deposition apparatus | |
CN112626495B (en) | Atomic layer deposition device capable of blowing powder | |
TWM610395U (en) | Powder atomic layer deposition device for preventing powder sticking | |
CN216192694U (en) | Powder atomic layer deposition equipment capable of preventing powder from being sticky | |
TWI773543B (en) | Powder atomic layer deposition machine for reducing powder adhesion | |
TWM622584U (en) | Powder atomic layer deposition (ALD) machine capable of avoiding powder sticking | |
CN217230929U (en) | Powder atomic layer deposition machine table with down-blowing pipeline | |
CN214736075U (en) | Powder atomic layer deposition device for preventing powder from being sticky | |
TWM610491U (en) | Atomic layer deposition device capable of blowing powder | |
TWI771124B (en) | Atomic layer deposition equipment with down-blowing pipeline | |
TWM614453U (en) | Detachable powder atomic layer deposition device | |
TWI775543B (en) | Powder atomic layer deposition equipment with quick release function | |
TWI750962B (en) | Powder atomic layer deposition apparatus for preventing powders from sticking to filter unit | |
CN215887223U (en) | Atomic layer deposition apparatus for blowing powder | |
CN112695295A (en) | Powder atomic layer deposition device with special cover plate design | |
CN214088661U (en) | Atomic layer deposition device capable of blowing powder | |
TWM622809U (en) | Powder atomic layer deposition machine with downward blowing line | |
CN114752919B (en) | Powder atomic layer deposition device for preventing powder from sticking | |
TWM619828U (en) | Atomic layer deposition device for blowing powder | |
CN214383794U (en) | Powder atomic layer deposition device with special cover plate design |