TWI749029B - Composite inspection system - Google Patents

Abstract

A composite inspection system according to the present invention is an inspection system including a first inspecting apparatus 1 for inspecting a sample based on X-ray measurement data obtained by irradiating the sample with X-rays, and a second inspecting apparatus 2 for analyzing the structure of the sample by any predetermined method. The X-ray measurement data obtained by the first inspecting apparatus 1 or an analysis result of the X-ray measurement data is output to the second inspecting apparatus 2. In the second inspecting apparatus 2, the structure of the sample is analyzed by using the X-ray measurement data input from the first inspecting apparatus 1 or the analysis result of the X-ray measurement data.

Description

Compound inspection system

The present invention relates to a composite inspection system suitable for use in the semiconductor manufacturing field, etc., in the technical field of manufacturing elements with a multilayer film structure in which a multilayer film is laminated on a substrate.

For semiconductors, electronic components made by laminating multiple layers of thin films on a substrate and manufactured by Lithography technology, the shape will vary depending on the state of the film thickness, density, crystallinity, etc., and the lithography processing conditions. Therefore, there is a need for an inspection device that can accurately measure the shape of the processed component. The shape of such processed components is called CD (Critical Dimension; minimum line width) as an important value to be managed in the semiconductor manufacturing process.

As inspection devices for making cross-sectional samples to observe the shape of the aforementioned components, there are known transmission electron microscopes (TEM; Transmission Electron Microscope) and scanning electron microscopes (SEM; Scanning Electron Microscope). However, because these inspection devices destroy samples, there are some cases where the samples cannot be measured online during the semiconductor manufacturing process, all inspections cannot be performed, the measurement results cannot be fed back to the previous steps, and the measurement results cannot be compared. The steps for feedforward (feedforward) and other shortcomings.

On the other hand, as an inspection device that non-destructively measures the shape of the aforementioned element in the semiconductor manufacturing step, an inspection device using a scanning electron microscope (CD-SEM: Critical Dimension-Scanning Electron) has been proposed. Microscope; minimum line width scanning electron microscope), inspection device using optical method (OCD: Optical Critical Dimension; minimum optical line width), and inspection device using atomic force microscope (CD-AFM: Critical Dimension Atomic Force Microscope; minimum line width Atomic force microscope) and so on. In addition, as an inspection device that uses X-rays to accurately determine the shape of the repeated pattern, a shape measuring device (CD-SAXS: Critical Dimension Small Angle X-ray Scattering; minimum line width) has been proposed. Small angle X-ray scattering). For example, Patent Documents 1 and 2 disclose conventional examples of CD-SAXS.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5700685

[Patent Document 1] Japanese Patent No. 5237186

[Non-Patent Literature]

[Non-Patent Document 1] Introduction to Metrology Applications in IC Manufacturing, P131, Tutorial Texts in Optical Engineering Volume TT101, SPIE PRESS, ISBN: 9781628418118

Because the probe uses light, the aforementioned OCD has the advantages of small measurement area and faster throughput, and because of the use of modeling and simulation, it has the advantages of analysing the complex three-dimensional semiconductor device The characteristics of the structure are therefore used to measure on-line during the semiconductor manufacturing steps The inspection device is very effective. In addition, the CD-SEM is effective as an inspection device that directly observes the surface shape of the device using the principle of a scanning electron microscope. However, these inspection devices have a resolution limit with a pitch of less than 10 nm. As semiconductor devices become more microminiaturized, analysis becomes difficult.

CD-SAXS is very effective as an inspection device to analyze the nano-scale shape of the surface of an electronic device. However, in order to measure the test pattern below 100 microns (micrometer) on the surface of a semiconductor wafer, a powerful X-ray source is required, but a small high-brightness X-ray source suitable for semiconductor on-line inspection devices cannot be obtained.

The present invention has been completed in view of the facts of the conventional technologies, and its purpose is to provide a composite inspection system suitable for shape analysis of semiconductor devices, etc., with a multilayer film structure in which a multilayer film is laminated on a substrate.

The basic concept of such a compound inspection system is disclosed in Non-Patent Document 1, and the present invention is based on this basic concept and embodies it.

That is, the present invention is a composite inspection system that includes: a first inspection device that inspects the sample based on X-ray measurement data obtained by irradiating the sample with X-rays; and a second inspection device that does not use X Ray measurement method to inspect the sample; characterized in that one of the X-ray measurement data obtained by the first inspection device and the analysis result of the X-ray measurement data is output toward the second inspection device, and the second inspection device uses The sample is inspected by one of the X-ray measurement data obtained by the first inspection device and an analysis result of the X-ray measurement data.

Here, it can be configured that the first inspection device includes: a measuring section that irradiates the surface of the sample with X-rays to measure the scattering intensity; The fitting part assumes that the fine structure on the surface of the sample constitutes a sample model of periodic structure. The unit structures are periodically arranged in a direction parallel to the surface; and the effects of refraction and reflection due to the multiple layers formed on the sample model are considered to calculate the scattering intensity of X-rays scattered by the fine structure , And fit the X-ray scattering intensity calculated according to the sample model to the measured scattering intensity; the determining part determines the best value of the parameter of the shape of the specific unit structure according to the fitting result of the fitting part And an output unit, which, according to a predetermined agreement, uses at least a part of the analytical value of the optimal value of the parameter containing the shape of the specific unit structure as the output value, and outputs it to the second inspection device; and the second inspection device The output value from the first inspection device is used to inspect the sample.

In addition, the first inspection device may also be configured to include: a measuring unit that irradiates the surface of the sample with X-rays to measure the scattering intensity; a fitting unit that assumes that the fine structure on the surface of the sample constitutes a sample model of a periodic structure, The periodic structure forms one or more layers along the direction perpendicular to the surface, and the unit structures are periodically arranged in the layer along the direction parallel to the surface, and the unit structures have a self-compact The position change from the periodic position, the position change does not depend on the mutual position difference but is random, and the unit structure system is formed by the same physical area and space area in the layer, and the X-ray generated by the physical area is calculated The scattering intensity of the X-ray calculated by the sample model is fitted to the measured scattering intensity; the determining part determines the shape of the specific unit structure according to the fitting result of the fitting part The optimal value of the parameter of the state; and the output unit, which outputs at least a part of the analytical value of the optimal value of the parameter including the shape of the specific unit structure as the output value according to a predetermined agreement to output to the second inspection Device; and the second inspection device uses the output value from the first inspection device to inspect the sample.

Here, the so-called "location change" refers to the offset (difference) from the location where the unit structure should be originally (strictly periodic location). In addition, the so-called "physical area" refers to the area where matter (basically solid) exists in the unit structure. On the other hand, the so-called "spatial area" refers to an area where there is no substance (basically solid) in the unit structure. Furthermore, there is still gas in the space area.

In addition, the present invention may also be constituted as a composite inspection system, which includes: a first inspection device that inspects the sample based on X-ray measurement data obtained by irradiating the sample with X-rays; and a second inspection device that does not Use the X-ray measurement method to inspect the above-mentioned sample; wherein, one of the measurement data obtained by the second inspection device and the analysis result of the measurement data is output toward the first inspection device, and the first inspection device uses the second inspection device 2. Inspect one of the measurement data obtained by the inspection device and the analysis result of the measurement data to inspect the sample.

In addition, the present invention may also be constituted as a composite inspection system, which includes: a first inspection device that inspects the sample based on X-ray measurement data obtained by irradiating the sample with X-rays; and a second inspection device that does not Use the X-ray measurement method to inspect the sample; wherein, the first inspection device includes: a measuring part that irradiates the surface of the sample with X-rays to measure the scattering intensity; The fitting part assumes that the fine structure on the surface of the sample constitutes a sample model of a periodic structure. The unit structures are periodically arranged in a direction parallel to the surface, and the effects of refraction and reflection due to the multiple layers formed on the sample model are considered to calculate the scattering intensity of X-rays scattered by the fine structure, and then The X-ray scattering intensity calculated according to the sample model is fitted to the measured scattering intensity; the determination unit, which determines the optimal value of the parameter of the shape of the specific unit structure according to the fitting result of the fitting unit; and output Section, which outputs at least a part of the analytical value including the optimal value of the parameter of the shape of the specific unit structure as an output value according to a predetermined agreement; using the X-ray obtained by the first inspection device One of the measurement data and the analysis result of the X-ray measurement data, and one of the data obtained by the second inspection device and the analysis result of the data, analyze the structure of the sample.

In addition, the present invention can also be constituted as a composite inspection system, which can include: a first inspection device that inspects the sample based on X-ray measurement data obtained by irradiating the sample with X-rays; and a second inspection device, which borrows The sample is inspected by a measuring method that does not use X-rays; among them, the first inspection device includes: a measuring part that irradiates the surface of the sample with X-rays to measure the scattering intensity; a fitting part that assumes the fineness on the surface of the sample The structure constitutes a sample model of a periodic structure in which one or more layers are formed along the direction perpendicular to the surface, and unit structures are periodically arranged in the layer along the direction parallel to the surface The unit structure has a position change from a strict periodic position. The position change does not depend on the mutual position difference but is random, and the unit structure system is determined by the same physical area and space area in the layer. Form, calculate the scattering intensity of X-rays generated by the solid area, and fit the scattering intensity of X-rays calculated by the sample model to the measured scattering intensity; the determining part is based on the fitting result of the fitting part , To determine the optimal value of the parameter of the shape of the specific unit structure; and the output unit, which outputs at least part of the analytical value including the optimal value of the parameter of the shape of the specific unit structure according to a predetermined agreement; And using one of the X-ray measurement data obtained by the first inspection device and the analysis result of the X-ray measurement data, and one of the data obtained by the second inspection device and the analysis result of the data , To analyze the structure of the sample.

In the present invention of the aforementioned configuration, the first inspection device may be configured to include: a sample table for arranging the sample of the inspection object; an image observation section for observing the image of the sample arranged on the sample table; a positioning mechanism, It is controlled according to the image observation result of the sample in the image observation section, so that the sample table moves along the orthogonal two directions, the height direction, and the in-plane rotation direction on the horizontal plane; a goniometer, which includes , Centered on the axis of rotation contained in the same plane as the surface of the sample placed on the sample table, and independently rotates the first and second rotating members along an imaginary plane perpendicular to the surface of the sample; X The radiation irradiation unit, which is mounted on the first rotating member, condenses the characteristic X-rays and sets the direction in the same plane as the surface of the sample placed on the sample table. Checking the position; X-ray detector, which is mounted on the second rotating member; and analysis unit, which digitizes and analyzes the X-ray pattern detected by the X-ray detector.

Here, the first inspection device can be configured to measure X-rays penetrating the sample with an X-ray detector, and it can also be configured to scatter from the surface of the sample with an X-ray detector. The composition of X-ray measurement.

Specifically, as the first inspection device, a transmission-Small Angle X-ray Scattering (T-SAXS: Transmission-Small Angle X-ray Scattering) that measures penetrating X-rays can be used, or it can be used almost A reflection type small-angle X-ray scattering device (GI-SAXS: Glazing Incidence-Small Angle X-ray Scattering) is used to incident X-rays at an angle parallel to the surface of the sample and measure the scattered X-rays from the surface.

GI-SAXS is suitable for measuring line and space structures and holes and protrusions with a depth of less than 200nm, while T-SAXS is suitable for measuring structures with a depth of more than 200nm, such as the measurement of the pore size of a hole structure. Furthermore, the first inspection device can also be configured as a device capable of measuring both T-SAXS and GI-SAXS.

In addition, the first inspection device may be equipped with a two-dimensional X-ray detector as an X-ray detector. In this way, rapid measurement can be performed.

On the other hand, the second inspection device may be constituted by, for example, an optical inspection device (OCD). In addition, the second inspection device can also use other methods such as an inspection device using a scanning electron microscope (CD-SEM) or an inspection device using an atomic force microscope (CD-AFM).

Can be set as the analytical value output from the first inspection device, including The composition of the interval between the periodic structures of the sample model.

More specifically, as the information (analytical value) transmitted from the first inspection device to the second inspection device, although various parameters can be set according to the surface shape, in the line/space structure, the pitch and the minimum line width can be listed (CD; Critical Dimension), height, side-wall angle (Side-Wall Angle), roundness (Roundness), etc., can also further include the difference information of each parameter.

In addition, when the periodic structure of the sample model includes a repetitive structure with holes, the analysis value output from the first inspection device may include the structure of the hole diameter.

As described above, according to the composite inspection system of the present invention, it is possible to analyze the device shape of a multi-layer film structure in which a multi-layer thin film is laminated on a substrate, such as a semiconductor element, in a multi-faceted manner, with high accuracy.

1: The first inspection device

2: The second inspection device

3: resolve server

4: Host computer

10: sample table

11: sample

20: positioning mechanism

30: Goniometer

31: Goniometer body

32: The first rotating arm

33: The second rotating arm

40: X-ray irradiation unit

41: X-ray tube

42: The first X-ray optics

43: Second X-ray optics

44: Condenser slit

45: unit body

47: Incident X-ray

48: Scattered X-rays

49: Penetrating X-rays

50: X-ray detector

60: Optical microscope

100: Central processing unit

101: XG controller

102: Image recognition circuit

103: Focus Controller

104: positioning controller

106: Goniometer controller

107: Counting control circuit

110: Storage Department

201: Operation Department

202: Display

203: Ministry of Communications

300: line

301: Space

302: deep hole

Lx, Ly: size

Rx, Ry: part of the size

θ _S , θ _D : rotation angle

Fig. 1 is a block diagram schematically showing a first basic configuration example of a composite inspection system and an information transmission system according to an embodiment of the present invention.

Fig. 2 is a block diagram schematically showing a second basic configuration example of the composite inspection system and the information transmission system according to the embodiment of the present invention.

Fig. 3 is a block diagram schematically showing a third basic configuration example of the composite inspection system and the information transmission system of the embodiment of the present invention.

Fig. 4 is a block diagram schematically showing a fourth basic configuration example of the composite inspection system and the information transmission system according to the embodiment of the present invention.

Fig. 5 is a block diagram schematically showing a fifth basic configuration example of the composite inspection system and the information transmission system of the embodiment of the present invention.

Figure 6 is a three-dimensional view showing the overall structure of the first inspection device according to the embodiment of the present invention picture.

Fig. 7 is a front view of the first inspection device shown in Fig. 6;

Fig. 8A is a side view schematically showing the structure of the X-ray irradiation unit incorporated in the first inspection device shown in Fig. 6.

Fig. 8B is a plan view of the same structure as Fig. 8A.

Fig. 9 is a front view schematically showing another configuration example of the first inspection device according to the embodiment of the present invention.

Fig. 10 is a right side view schematically showing the structure of the first inspection device shown in Fig. 9.

FIG. 11 is a schematic diagram for explaining the measurement operation of the first inspection device shown in FIG. 9.

FIG. 12A is a side view schematically showing the structure of the X-ray irradiation unit incorporated in the first inspection device shown in FIG. 9.

Fig. 12B is a plan view of the same structure as Fig. 12A.

Fig. 13 is a block diagram showing the control system of the first inspection device according to the embodiment of the present invention.

Fig. 14 is a control flow chart of the first inspection device according to the embodiment of the present invention.

FIG. 15A is a diagram showing the parameters used to analyze the shape of the line/space pattern as the inspection object.

FIG. 15B is a diagram showing the parameters used to analyze the shape of the line/space pattern produced by the double exposure process.

Fig. 16A is a schematic cross-sectional view of the repeated structure of deep holes as the inspection object.

Fig. 16B is an enlarged view of a deep hole in the schematic cross-sectional view shown in Fig. 16A.

Fig. 17 is a diagram showing an example of measurement data of a CD-SEM (second inspection device).

FIG. 18 is a diagram showing a usage example of fitting the observation image of CD-SEM (second inspection device) with the shape model of CD-SAXS (first inspection device).

Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings.

[Basic configuration example and information transmission system]

Figures 1 to 5 schematically show a basic configuration example of a composite inspection system and a block diagram of an information transmission system according to an embodiment of the present invention. The composite inspection system of this embodiment includes: a first inspection device 1 that inspects the sample based on X-ray measurement data obtained by irradiating the sample with X-rays; and a second inspection device 2 that uses measurement without X-rays Method to check the sample. As the first inspection device 1, for example, an X-ray nanometer shape measuring device (CD-SAXS) can be used. On the other hand, as the second inspection device 2, for example, an optical inspection device (OCD) or an inspection device using a scanning electron microscope (CD-SEM) can be used.

In the first to third basic configuration examples shown in FIGS. 1 to 3, the information system from the first inspection device 1 is output toward the second inspection device 2. As the information output from the first inspection device 1, for example, in addition to the measurement data obtained by the X-ray measurement of the sample or the analysis result of the X-ray measurement data, it also includes information about the sample of the measurement object (Carrier( Carrier), Wafer (wafer information), etc. By transmitting the result of analysis by the first inspection device 1 and sample information (Carrier, Wafer information) to the second inspection device 2, the second inspection device 2 can perform high-precision analysis.

That is, the OCD that constitutes the second inspection device 2 has advantages such as small measurement area and fast output rate because the probe uses light, and because of the use of modeling and simulation, it has the advantages of being able to analyze the complex three-dimensional structure of the semiconductor device. Feature, therefore It is effective as an inspection device for measuring on-line in the semiconductor manufacturing process. However, OCD has a resolution limit at the scale with a pitch of 10nm or less. As semiconductor devices become smaller, the analysis will become difficult.

On the other hand, the CD-SAXS constituting the first inspection device 1 is effective as an inspection device for analyzing the nanometer-scale shape of the surface of the electronic device, and according to the configuration with the X-ray irradiation unit described later, it is possible to obtain the measurement semiconductor A small, high-brightness X-ray source with sufficient power for test patterns below 100 microns on the surface of the wafer. Therefore, by using the information output from the first inspection device 1, the second inspection device 2 can perform high-precision analysis.

Here, in the first basic configuration example shown in FIG. 1, the first inspection device 1 and the second inspection device 2 are directly connected to transmit information. Although Ethernet (registered trademark) is used as the connection method here, any transmission methods such as RS-232C serial transmission, optical transmission, wireless transmission, etc. can also be used.

In the second basic configuration example shown in FIG. 2, the first inspection device 1 and the second inspection device 2 are connected via an analysis server 3. In this basic configuration example, the result of the first inspection device 1 is transmitted to the analysis server 3. The second inspection device 2 obtains information from the analysis server 3. Here, although Ethernet (registered trademark) is also used as the connection means, any transmission method such as RS-232C serial transmission, optical transmission, wireless transmission, etc. can also be used.

In the third basic configuration example shown in FIG. 3, the first inspection device 1 and the second inspection device 2 are connected via a host computer 4 (Host) that controls the process in a semiconductor factory. In this basic configuration example, the result of the first inspection device 1 is transmitted to the host computer 4, and the second inspection device 2 obtains information from the host computer 4. In semiconductor manufacturing plants that usually use 300mm wafers, according to the standard called GEM300 Through the agreement to transfer information. If the programming of the host computer 4 is performed, the information transmission of the first and second inspection devices 1 and 2 can be performed.

On the other hand, in the fourth basic configuration example shown in FIG. 4, the first inspection device 1 and the second inspection device 2 are connected to the analysis server 3, and the analysis server 3 is further connected to the host computer 4. In this basic configuration example, the analysis results of the first inspection device 1 and the measurement data of the second inspection device 2 are respectively output to the analysis server 3, and the analysis server 3 executes the measurement data from the second inspection device 2 The analysis. The analysis result is transmitted from the analysis server 3 to the host computer 4.

For example, when the OCD is used as the second inspection device 2, it is impossible to analyze the fine information such as the fine pitch below 10 nm or the difference in the pitch between multiple exposures. Only by using the analysis results obtained by the first inspection device 1 can the analysis be performed correctly.

In addition, in the fifth basic configuration example shown in FIG. 5, the information from the second inspection device 2 is output toward the first inspection device 1. By transmitting the analysis result and sample information (Carrier, Wafer information) by the second inspection device 2, high-precision analysis can be performed on the first inspection device 1.

In the fifth basic configuration example, the first inspection device 1 and the second inspection device 2 are connected via the host computer 4 (Host) that controls the process in the semiconductor factory, but unlike the third basic configuration example, the first inspection device 1 and the second inspection device 2 are connected Second, the result of the inspection device 2 is transmitted to the host computer 4. In semiconductor manufacturing plants that usually use 300mm wafers, information is transmitted according to a standardized protocol called GEM300. If the programming of the host computer 4 is carried out, the information transmission of the first and second inspection devices 1 and 2 can be carried out.

[Summary of OCD applicable to the second inspection device]

The optical inspection device (OCD) is used for the 3-dimensional shape measurement of fine repeating patterns such as line and space in semiconductor devices.

The measurement and analysis procedures performed by OCD are as follows. First, before measurement, create a number of OCD-specific models that have input parameters such as the detailed structure and material properties of the sample to be measured, and store them as a library.

Secondly, measure the sample to be measured. As a measurement method, a complex structure can be measured by combining several measurement methods as follows: a white light source is incident on the sample to be measured through a polarizer, and a spectrometer is used to detect the scattering due to fine patterns. The method of measuring the spectroscopic waveform (Spectroscopic Ellipsometer); the method of measuring the reflectance of the measuring object sample from the incident light directly above the measuring object sample (Reflectometer), etc.

Then, the spectral (Spectral) waveform obtained by the measurement is compared with the waveform calculated by the OCD model, and the most consistent waveform is determined as the shape of the sample to be measured. Based on the judgment result, visualize the shape and output the size of each part. Feed the obtained results back to the model making, so that the accuracy of the analysis is continuously improved.

As an advantage of OCD, due to the use of the aforementioned analysis method, it can perform efficient size measurement within the measurement range of the pattern consistent with the model in the library, and can be used as an on-line inspection of the semiconductor manufacturing process.

However, OCD also has the following disadvantages. First of all, it takes a lot of time to create a library. In addition, in order to create a library, it is necessary to prepare multiple physical samples for reference, which will cost a lot of man-hours and expenses.

In addition, there is also the property that if the material or shape around the measurement site is different, it will be affected by it and cause the spectral waveform to vary greatly. Therefore, if there is a change in the manufacturing process or the specification of the product, it is necessary to start again from creating the library, which will cost a lot of labor. Therefore, depending on the material and shape used, there is a possibility that OCD cannot be used.

In addition, the miniaturization of semiconductors is developing day by day. If you want to measure fine patterns below 10nm, the resolution of the wavelength range from incident light has its limit, so it is difficult to perform accurate size measurement.

[Summary of CD-SEM applicable to the second inspection device]

The inspection device (CD-SEM) using a scanning electron microscope (SEM) is a standard machine for measuring the two-dimensional size of the fine pattern of a semiconductor device, and is widely used in semiconductor manufacturing lines.

The measurement and analysis procedures by CD-SEM are as follows. That is, an SEM image is obtained for the sample to be measured, and the size of the sample to be measured is calculated from the image. The principle of image acquisition is the same as that of a general SEM. It uses an electronic lens to condense the electron beam into a small diameter to scan it on the sample to be measured, and to detect the secondary electronic image and reflection from the sample to be measured. Electronic image and get image. The size calculation uses the contrast signal of the SEM image. Obtain the line profile (spectral line profile) of the part to be measured on the image, and calculate the size of the measurement target sample from the line profile, image magnification and the number of pixels in the measurement interval.

Since CD-SEM has the advantages of deeper focal depth and accurate measurement of the size of the bottom of the pattern compared to the optical type, it is widely used as a standard machine for size measurement in current semiconductor manufacturing lines.

However, CD-SEM also has the following shortcomings. Depending on the method of obtaining the edge from the spectral profile, the calculated size will be different, so the reliability of the measurement result is low. There is a possibility that the electron beam will destroy the measurement object (especially organic matter such as resist), and the size measurement in the depth direction cannot be performed. Since CD-SEM has the above-mentioned shortcomings, it is very likely that it will not be able to support the manufacturing of semiconductor devices in the future which will be more miniaturized or 3-dimensional.

[Example 1 of the overall structure of the first inspection device (GI-SAXS)]

Fig. 6 is a perspective view showing the overall structure of the first inspection device, and Fig. 7 is a front view of the device. The first inspection device 1 includes a sample table 10, a positioning mechanism 20, a goniometer 30, an X-ray irradiation unit 40, an X-ray detector 50, and an optical microscope 60 equipped with a CCD (Charge Coupled Device) camera and the like.

On the upper surface of the sample table 10, a semiconductor wafer (sample) to be inspected is arranged, which is driven by the positioning mechanism 20. The positioning mechanism 20 includes a horizontal movement mechanism that can move freely in two directions (X, Y directions) at a right angle in the horizontal plane, a lifting mechanism that can freely move in the vertical direction (Z direction) orthogonal to the horizontal plane, and an in-plane rotation mechanism, and It has the function of moving the sample table 10 in the X, Y, and Z directions and performing in-plane rotation, and positioning any measured part of the semiconductor wafer arranged on the upper surface of the semiconductor wafer in a predetermined direction at the beam position where the X-ray is irradiated Features.

The goniometer 30 is equipped with first and second rotating arms (rotating members) 32 and 33 on the goniometer body 31. The rotating arms 32 and 33 are centered on the axis perpendicular to the paper surface of FIG. 7 (theta _S axis, theta _D axis), and respectively rotate along an imaginary plane orthogonal to the upper surface of the sample table. Here, the rotation angle from the horizontal position of the first rotating arm 32 is set to θ _S , and the rotation angle from the horizontal position of the second rotating arm 33 is set to θ _D , so that the respective rotating arms 32 and 33 are rotated drive.

The X-ray irradiation unit 40 is mounted on the first rotating arm 32 that rotates around _{θ S.} In addition, an X-ray detector 50 is mounted on the second rotating arm 33 that rotates around _{θ D as the center.}

The X-ray irradiation unit 40 has a function of monochromatizing (Single color) X-rays generated from the X-ray tube into characteristic X-rays of a specific wavelength, and condensing them in one place. The position irradiated by the characteristic X-ray from the X-ray irradiation unit 40 becomes the inspection position, and the measured part of the sample arranged on the upper surface of the sample table 10 is positioned to the inspection position by the positioning mechanism 20. Furthermore, the inspection position is set in the same plane as the surface of the sample arranged on the sample table 10.

The X-ray detector 50 is used for X-ray reflectivity measurement (XRR) and small-angle X-ray scattering (SAXS) measurement. Since the X-ray reflectance measurement is used to measure the interference between the reflected X-rays on the film surface and the reflected X-rays at the interface between the film and the substrate to derive the film thickness and density, the film thickness can be obtained by Angstrom (Angstrom; Esther). Shift) level of measurement accuracy. As the X-ray detector 50, for example, a two-dimensional X-ray detector can also be used to implement X-ray reflectivity measurement in TDI (Time Delay Integration) mode, or small-angle X-ray scattering in Still mode. Measurement. The part to be measured of the sample (for example, semiconductor wafer) arranged on the sample stage 10 is arranged under the optical microscope 60 by using the positioning mechanism 20 to move the sample stage 10. Then, it is moved horizontally from this position toward the inspection position, thereby positioning the measured part of the sample (for example, a semiconductor wafer) at the inspection position.

[Configuration example 1 of X-ray irradiation unit (GI-SAXS)]

Next, a configuration example of the X-ray irradiation unit 40 will be described. Figure 8A and Figure 8B schematically shows a configuration example of the X-ray irradiation unit 40 that is preferable when the first inspection device 1 is configured by a reflective small-angle X-ray scattering device (GI-SAXS). Fig. 8A is a side view, and Fig. 8B is a top view.

The X-ray irradiation unit 40 includes an X-ray tube 41, a first X-ray optical element 42, a second X-ray optical element 43, and a condensing slit 44. The first and second X-ray optical elements 42 and 43 use a condenser lens in which a multilayer film is formed on the same surface. These constituent elements are built in the unit body not shown. The unit of this system has a compact size and shape that can be mounted on the first rotating arm 32.

100μm以下、且較佳為20μm以下之X射線球管。作為目標材料，雖可選擇銅(Cu)、鉬(Mo)、銀(Ag)、金(Au)等，但尤其若使用銅(Cu)，可測量具有高角度解析度之小角度散射。 Next, explain the path of X-rays. The size of the electron beam focus on the X-ray tube 41 using the target is

An X-ray tube of 100 μm or less, and preferably 20 μm or less. As the target material, copper (Cu), molybdenum (Mo), silver (Ag), gold (Au), etc. can be selected, but especially if copper (Cu) is used, small-angle scattering with high-angle resolution can be measured.

The X-ray emitted from the X-ray tube 41 first reaches the first X-ray optical element 42. Then, the scattered X-rays 48 are focused on the position of the X-ray detector 50 by the first X-ray optical element 42. As a result of condensing the scattered X-rays 48 toward the X-ray detector 50 in this way, a high-angle resolution measurement can be performed.

Next, the X-rays are incident on the second X-ray optical element 43 to perform vertical focusing, so that the incident X-rays 47 are focused on the surface of the sample 11. Thereby, when X-rays are incident almost parallel to the surface of the sample 11 for X-ray reflectivity measurement or small-angle X-ray scattering measurement, high-angle resolution measurement can also be performed.

[Configuration example 2 of the first inspection device (T-SAXS)]

Figure 9 is a schematic front view showing another example of the structure of the first inspection device, Figure 10 series is a right side view of the same configuration as in Fig. 9. The first inspection device 1 shown in these figures becomes a structure that is more suitable for the transmission type small-angle X-ray scattering device (T-SAXS).

The first inspection apparatus 1 shown in these figures includes a sample table 10, a positioning mechanism 20, a goniometer 30, an X-ray irradiation unit 40, an X-ray detector 50, and an optical microscope 60 equipped with a CCD camera and the like. Furthermore, in FIG. 10, the optical microscope 60 is omitted.

On the upper surface of the sample table 10, a semiconductor wafer (sample) to be inspected is arranged, which is driven by the positioning mechanism 20. The positioning mechanism 20 includes a horizontal movement mechanism that can move freely in two directions (X, Y directions) at a right angle in the horizontal plane, a lifting mechanism that can freely move in the vertical direction (Z direction) orthogonal to the horizontal plane, and an in-plane rotation mechanism, and With the sample table 10 moving in the X, Y, and Z directions and performing in-plane rotation, any measured part of the semiconductor wafer arranged on the upper surface is positioned in a predetermined direction at the beam position where X-rays are irradiated .

The goniometer 30 is equipped with first and second rotating arms (rotating members) 32 and 33 on the goniometer body 31. The rotating arms 32 and 33 are centered on the axis perpendicular to the paper surface of FIG. 10 (theta _S axis, theta _D axis), and respectively rotate along a virtual plane orthogonal to the upper surface of the sample table. Here, the rotation angle from the horizontal position of the first rotating arm 32 is set to θ _S , and the rotation angle from the horizontal position of the second rotating arm 33 is set to θ _D , so that the respective rotating arms 32 and 33 are rotated drive.

The X-ray irradiation unit 40 is mounted on the first rotating arm 32 that rotates around _{θ S.} In addition, an X-ray detector 50 is mounted on the second rotating arm 33 that rotates around _{θ D as the center.}

In the configuration example of the first inspection device 1 shown in FIGS. 9 and 10, the rotation angle θ _S from the horizontal position of the first rotating arm 32 can be driven to the bottom of the sample table 10 (that is, -90°) , And can perform the measurement of penetrating X-ray 49 as shown in Figure 11. Therefore, the first inspection device 1 with this configuration can be applied to a transmission type small-angle X-ray scattering device (T-SAXS).

Since the sample table 10 and the positioning mechanism 20 must allow X-rays to penetrate, they are formed with carbon, boron carbide, polyimide film (kapton), etc., which have a small X-ray absorption coefficient, or are hollow.

Furthermore, in FIG. 9, although the illustration of the positioning mechanism 20 and the supporting mechanism of the optical microscope 60 are omitted, these supporting mechanisms are not connected to the rotating arms 32, 33 and the X-ray irradiation unit 40, located on the goniometer. The surrounding components of the X-ray detector 50 are arranged in such a way that they interfere.

[Configuration example 2 of X-ray irradiation unit (T-SAXS)]

Next, a configuration example of the X-ray irradiation unit 40 will be described. 12A and 12B schematically show a configuration example of an X-ray irradiation unit 40 that is preferable when the first inspection device 1 is configured by a penetrating small-angle X-ray scattering device (T-SAXS). Fig. 12A is a side view, and Fig. 12B is a top view.

The X-ray irradiation unit 40 shown in these figures includes an X-ray tube 41, a first X-ray optical element 42, a second X-ray optical element 43, and a condensing slit 44 as constituent elements. The first and second X-ray optical elements 42, 43 use a condenser lens with a multilayer film formed on the surface.

These X-ray optical elements 42 and 43 have a structure enclosed in a casing not shown in order to prevent deterioration of the multilayer film. The housing has a mounting structure that does not shift or deform the built-in X-ray optical elements 42, 43 and does not apply unnecessary stress. In addition, in order to be able to fine-tune the optical system, there are , Y-axis, Z-axis direction for high-precision alignment position adjustment mechanism.

100μm以下、較佳為20μm以下之X射線球管。作為目標材料，雖可選擇銅(Cu)、鉬(Mo)、銀(Ag)、金(Au)等，但若為穿透式之情形時，由於必須能穿透作為基板之Si晶圓之能量高之X射線，因此較佳為使用能達成上述條件之鉬(Mo)或銀(Ag)。 Next, the path of the X-ray emitted from the X-ray tube 41 until it reaches the X-ray detector 50 will be described. First, the X-ray tube 41 is used, and the electron beam focus size used on the target is

An X-ray tube of 100 μm or less, preferably 20 μm or less. As the target material, although copper (Cu), molybdenum (Mo), silver (Ag), gold (Au), etc. can be selected, if it is a transmissive type, it must be able to penetrate the Si wafer as the substrate. High-energy X-rays, therefore, it is preferable to use molybdenum (Mo) or silver (Ag) that can achieve the above conditions.

The X-ray emitted from the X-ray tube 41 first reaches the first X-ray optical element 42. The X-ray system is condensed in the horizontal direction (the direction parallel to the paper surface in FIG. 12B) by the first X-ray optical element 42 so that the focal point becomes the position of the X-ray detector 50. Secondly, by the second X-ray optical element 43, the light is condensed in the vertical direction (the direction parallel to the paper surface in FIG. 12A) so that the focal point also becomes the position of the X-ray detector 50. The concentrated X-ray is incident on the measurement sample. The X-rays are scattered by fine grooves or wiring formed in the measurement sample, penetrate the sample, and reach the X-ray detector 50.

The aforementioned method of using the first and second X-ray optical elements 42, 43 to control the optical axis of X-rays is called Kirkpatrick-Baez. The advantage of this method is that since the two mirrors can be adjusted independently, the degree of freedom in controlling the shape of the focus is high. As another method, although not shown in the figure, a method in which two mirrors are integrated to form an angle (L shape) may also be used. The method of integrating the two mirrors into an angle (L shape) in this way is called a side by side method, and has advantages such as compacting the optical system and easy alignment.

[Control system of the first inspection device]

Fig. 13 is a block diagram showing the control system of the first inspection device. The control of the X-ray irradiation unit 40 is executed by the XG (X-ray Generator) controller 101. In addition, the image of the sample captured by the optical microscope 60 is recognized by the image recognition circuit 102. The optical microscope 60 and the image recognition circuit 102 constitute an image observation unit that observes the image of the sample placed on the sample table 10. Furthermore, the focus position of the optical microscope 60 is adjusted by the focus controller 103.

The positioning controller 104 drives and controls the positioning mechanism 20 based on the image of the sample recognized by the image recognition circuit 102 captured by the optical microscope 60. The goniometer 30 is driven and controlled by the goniometer controller 106.

The components of the XG controller 101, the image recognition circuit 102, the focus controller 103, the positioning controller 104, and the goniometer controller 106 are separately based on the setting information sent from the central processing unit (CPU) 100 Act. Here, the setting information is pre-stored in the storage unit 110 as a recipe, and is read out by the central processing unit (CPU) 100 and output to each of the above-mentioned constituent units.

The X-ray detector 50 is controlled by the counting control circuit 107. In addition, the first inspection device 1 is provided with an operation unit 201 composed of a keyboard and a mouse for inputting various settings necessary for the operation of the device by the operator. In addition, the first inspection device 1 is provided with a display unit 202 composed of a liquid crystal display or the like, and a communication unit 203 that performs data communication via a network.

[Execution program of X-ray film inspection method of the first inspection device]

Figure 14 shows the X of the first inspection device that uses semiconductor wafers as inspection objects The flow chart of the execution procedure of the ray film inspection method.

A software for performing X-ray film inspection is pre-stored in the storage unit 110, and the central processing unit (CPU) 100 executes the following processing steps according to the software.

After arranging the semiconductor wafer that is the sample to be inspected on the sample table 10, first, the measured portion of the semiconductor wafer is positioned to the inspection position (step S1). Here, on the surface of the semiconductor wafer, the unique point of the image recognition circuit 102 can be specified by the image information from the optical microscope 60, which is preset in the storage unit 110 as a recipe. Then, based on the characteristic, the position information of the measured part is set in the storage unit 110 in advance as a recipe. As a feature, for example, a characteristic pattern shape formed on the surface of a semiconductor wafer is set, and the image recognition circuit 102 can judge and recognize the location without confusion.

The image recognition circuit 102 recognizes and specifies the characteristics of the surface of the semiconductor wafer placed on the sample stage 10 by using image information from the optical microscope 60.

Then, based on the characteristics recognized by the image recognition circuit 102, the positioning controller 104 drives and controls the positioning mechanism 20 according to the preset position information of the measured part. The positioning mechanism 20 moves the sample table 10 in the horizontal two directions (X-Y direction) and the height direction (Z direction) to arrange the measured part of the semiconductor wafer to the inspection position. Furthermore, if necessary, the semiconductor wafer will be rotated in-plane by the in-plane rotation mechanism and arranged in a predetermined orientation.

After positioning the measured part of the semiconductor wafer as described above, inspection by X-ray is performed (step S2), the inspection data is analyzed by the central processing unit 100 (step S3), and the analysis result is output (step S4). The above steps are performed on all measured parts set on the semiconductor wafer (step S5), and are performed on all measured parts End after the inspection.

[GI-SAXS measurement method of the first inspection device]

Next, the method of measuring the fine structure on the surface of the test material using the reflective small-angle X-ray scattering device (GI-SAXS) as the first inspection device 1 will be described. First, set the sample on the sample table in such a way that X-rays can be incident from a direction orthogonal to the cross-section to be measured. For example, in the case of measuring a two-dimensional profile like a line pattern, the line direction and the direction of the incident X-rays are set and measured so that they are parallel. For example, in the case of measuring a three-dimensional cross-section such as a hole pattern or a pillar pattern, the sample is arranged and measured in such a way that a plurality of incident directions can be selected according to its in-plane symmetry.

The X-ray incident angle with respect to the surface of the sample is set near the critical angle of total reflection. By incident X-rays near the critical angle of total reflection, the fine structure of the surface can be measured with high sensitivity. In order to obtain the fine structure information in the normal direction of the sample surface, the scattering vector in the normal direction of the sample surface must be changed. For this reason, the diffraction condition must be satisfied in the area where the exit angle relative to the sample surface is larger. This can be achieved by making the X-ray incident direction orthogonal to the cross-section to be measured, and rotating the sample in-plane. The X-ray diffraction pattern is recorded by a two-dimensional detector while rotating the sample in the plane.

[T-SAXS measurement method of the first inspection device]

Next, as the first inspection device 1, a method for measuring the fine structure on the surface of the test material using the penetrating small-angle X-ray scattering device (T-SAXS) will be described. First, the X-ray can be incident from a direction perpendicular to the surface of the sample In this way, the sample is set on the sample table. When the incident direction of X-rays is perpendicular to the surface of the sample, the structure in the direction parallel to the surface of the sample can be analyzed. However, in this case, since the scattering vector in the normal direction of the sample surface is approximately 0, it is impossible to analyze the structure of the normal direction of the sample surface.

Therefore, in order to analyze the structure of the normal direction of the sample surface, the scattering vector in the normal direction of the sample surface must be changed. This can be achieved by setting the incident direction of X-rays to be perpendicular to the surface of the sample and rotating the sample in-plane. The X-ray diffraction pattern is recorded by a two-dimensional detector while rotating the sample.

The larger the amount of rotation angle is, the more the scattering vector in the normal direction of the sample surface can be greatly changed, and the real space resolution of the normal direction of the sample surface can be improved. The rotation angle range at this time is determined by considering the output rate and analytical accuracy. Here, if the sample is rotated in the cross-sectional direction of interest, the data can be efficiently obtained with the smallest amount of rotation angle.

[Analysis method of measurement data of the first inspection device]

Then, by specifying the parameters of the shape of the unit structure of the periodic structure of the predetermined sample, and assuming the sample model, the X-ray scattering intensity is calculated by simulation. That is, due to the fine structure on the surface, one or more layers are formed in the direction perpendicular to the surface. In these layers, it is assumed that the unit structure is periodically arranged in a direction parallel to the surface of the sample, and the scattering caused by the structure of the X-rays refracted and reflected by each interface is calculated. According to the calculation result, the X-ray scattering intensity calculated by the sample model is fitted with the measured scattering intensity. Then, the fitting result determines the optimal value of the parameter of the shape of the specific unit structure.

Figure 15A shows the line/space pattern used to analyze the inspection object The graph of the parameters of the shape. This shape is formed by alternating lines 300 and spaces 301 repeatedly. Here, as the simplest case, define the height (Height), minimum line width (CD; Critical Dimension), pitch (Pitch), side-wall angle (Side-Wall Angle), upper round corner (Top Round), Bottom Round. In accordance with the actual shape, geometric figures such as ellipse, straight line and curve can be combined to present any shape.

FIG. 15B is a diagram showing the parameters used to analyze the shape of the line/space pattern produced by the double exposure process. Since the double exposure exceeds the limit of the resolution of photolithography, it is a method of repeatedly performing multiple exposures. In addition, a method is proposed that combines a method called self-alignment to form fine structures below 10 nm. If the first inspection device 1 of the present invention is used, in addition to a single pitch, the offset of a plurality of photolithography processes can also be measured.

In addition, FIG. 16A is a schematic cross-sectional view showing the repeated structure of the deep hole as the inspection object. Fig. 16B is an enlarged view of a deep hole in the schematic cross-sectional view shown in Fig. 16A. From the viewpoint of process management, it is important to measure the shape of the deep hole 302, but the hole diameter can be measured by the first inspection device 1.

[Analysis method of the measurement data of the second inspection device]

Figure 17 is a diagram showing an example of measurement data using a scanning electron microscope inspection device (CD-SEM). As the second inspection device 2, by using a CD-SEM, for example, an observation image of the pattern shape (measurement object) formed on the semiconductor substrate shown in the figure can be obtained as the measurement data.

According to the measurement data, the relative size on the plane of the pattern shape can be recognized. For example, as shown in Figure 18, according to the CD-SEM observation image shown in Figure 17, The relative ratio of the X coordinate size Lx and the Y coordinate size Ly can be obtained. Lx/Ly, the X coordinate size Lx and the partial size Rx relative ratio Rx/Lx, and the Y coordinate size Ly and the partial size Ry relative ratio Ry/Ly etc.

[Usage example of the output value of the second inspection device from the first inspection device]

First, an example of the use of the output from the first inspection device (CD-SAXS) when the OCD is used as the second inspection device 2 is described below. As mentioned above, OCD has the property that if the material or shape around the measurement part is different, the spectral waveform will be affected by the influence and change greatly. Therefore, when obtaining very different spectral waveforms, it is difficult to distinguish between the shape change or the influence caused by external interference. Therefore, this problem is overcome by using the present invention. Measure with OCD, and compare it with CD-SAXS data when displaying abnormal values such as inconsistency between the acquired spectrum waveform and any data calculated by the OCD model. If the CD-SAXS data is normal, the OCD result will be treated as an abnormal value caused by external interference. If the value of CD-SAXS is also abnormal, it will be treated as an abnormal shape. CD-SAXS data can measure the representative points in advance, or it can measure the object part only when the OCD data is abnormal. No matter what, the data of CD-SAXS is used for OCD inspection. With this method, the accuracy of OCD inspection can be improved, and the cause of abnormality can be easily identified.

Next, an example of the use of the output value from CD-SAXS when the CD-SEM is used as the second inspection device 2 will be described. As mentioned above, CD-SEM can calculate the CD by detecting the edge based on the obtained spectral line contour, but the calculated size will be different due to the different method of obtaining the edge, which will cause the measurement result to be different. Issues with low reliability. According to the present invention, by using The output value of CD-SAXS can improve the measurement accuracy of CD-SEM, which can solve this problem. First, measure a certain part of the target sample with CD-SAXS. Secondly, the same part is measured by CD-SEM to obtain the spectral profile. Compare these two data to verify which part of the CD-SEM spectral line profile is equivalent to the edge part of the CD-SAXS data, and set it as the CD value. After that, the measurement was continued with CD-SEM. With such a method, CD inspection can be performed with high accuracy and efficiency.

As mentioned above, the second inspection device 2 can also use the output value from the first inspection device 1 (including the X-ray measurement data input from the first inspection device 1 or the analysis result of the X-ray measurement data) to verify the inspection result. That is, in the present invention in which the second inspection device 2 uses the output value from the first inspection device 1 and the like, the "inspection sample" of the second inspection device 2 includes operations (steps) for verifying the inspection results, etc. The broad concept.

[Usage example of the output value of the first inspection device from the second inspection device]

As shown in Fig. 18, the CD-SAXS (first inspection device 1) shape model is used to fit the observation image of the CD-SEM (second inspection device 2) shown in Fig. 17, and the shape model is used. To estimate the outline position of the pattern shape formed on the semiconductor substrate as the measurement object. Then, according to the estimated contour position, perform CD-SAXS measurement and data analysis of the measurement results, such as calculating the size Ly. Based on the relative ratios Lx/Ly and Ry/Ly of the calculation results to the dimensions, the dimensions Lx and Ry can be calculated, and further Rx can also be calculated. In addition, with CD-SAXS, it is also possible to analyze the depth dimension of the pattern shape of the measuring object.

Since the observation image using the CD-SEM (the second inspection device 2), it is possible to estimate the wheel of the pattern shape formed on the semiconductor substrate as the measurement object Therefore, the measurement range and the number of measurements can be reduced, and the output rate can be improved.

Moreover, even in the first inspection device 1, the output value from the second inspection device 2 (including the X-ray measurement data input from the second inspection device 2 or the analysis result of the X-ray measurement data) can be used to Verify the inspection results. That is, in the present invention in which the first inspection device 1 uses the output value from the second inspection device 2 and the like, the "inspection sample" of the first inspection device 1 also includes operations (steps) for verifying inspection results, etc. The broad concept.

In addition, the present invention is not limited to the aforementioned embodiments, but of course various modifications and applications can be implemented.

1: The first inspection device

2: The second inspection device

Claims (19)

A composite inspection system, comprising: a first inspection device that inspects the fine structure on the surface of the semiconductor wafer based on X-ray measurement data obtained by irradiating the surface of the semiconductor wafer with X-rays; and a second inspection device, It inspects the fine structure on the surface of the semiconductor wafer by a measurement method that does not use X-rays; it is characterized in that the first inspection device is an X-ray nanometer shape measurement device that uses X-ray scattering at a small angle, and faces the The second inspection device outputs one of the X-ray measurement data obtained by the first inspection device and the analysis result of the X-ray measurement data, and the second inspection device uses the above-mentioned X-ray measurement data obtained by the first inspection device. One of the X-ray measurement data and the analysis result of the X-ray measurement data is used to inspect the fine structure on the surface of the semiconductor wafer. The compound inspection system of claim 1, wherein the first inspection device includes: a measuring unit that irradiates the surface of the semiconductor wafer to measure the scattering intensity; and a fitting unit that assumes that the semiconductor wafer is The fine structure on the surface constitutes a sample model of a periodic structure. The periodic structure forms a plurality of layers with different refractive indexes along a direction perpendicular to the surface, and is periodically arranged in the layer along a direction parallel to the surface Unit structure, and taking into account the effects of refraction and reflection due to the multiple layers formed in the above sample model, the scattering intensity of X-rays scattered by the above fine structure is calculated, and it will be calculated based on the above sample model The scattered intensity of the X-ray output is fitted to the measured scattering intensity; the determining part determines the specific unit structure according to the fitting result of the fitting part The optimal value of the parameter of the shape of the body; and the output unit, which outputs at least a part of the analytical value of the optimal value of the parameter containing the shape of the specific unit structure as the output value according to a predetermined agreement To the second inspection device; and the second inspection device uses the output value from the first inspection device to inspect the fine structure on the surface of the semiconductor wafer. The compound inspection system of claim 1, wherein the first inspection device includes: a measuring unit that irradiates the surface of the semiconductor wafer to measure the scattering intensity; and a fitting unit that assumes that the semiconductor wafer is The fine structure on the surface constitutes a sample model of a periodic structure. The periodic structure forms one or more layers along the direction perpendicular to the surface, and the units are periodically arranged in the layer along the direction parallel to the surface. Structure, and the unit structure has a position change from a strict periodic position. The position change does not depend on the mutual position difference but is random, and the unit structure system is based on the same physical area and The spatial region is formed, the scattering intensity of the X-rays generated by the solid region is calculated, and the scattering intensity of the X-rays calculated by the sample model is fitted to the measured scattering intensity; the determination part is based on The fitting result of the fitting unit determines the optimal value of the parameter specifying the shape of the unit structure; and the output unit, which according to a predetermined agreement, will include the best value of the parameter specifying the shape of the unit structure At least a part of the analytical value of the good value is output to the second inspection device as an output value; and the second inspection device uses the output value from the first inspection device to inspect the fine structure on the surface of the semiconductor wafer . A composite inspection system, comprising: a first inspection device that inspects the fine structure on the surface of the semiconductor wafer based on X-ray measurement data obtained by irradiating the surface of the semiconductor wafer with X-rays; and a second inspection device, It inspects the fine structure on the surface of the semiconductor wafer by a measurement method that does not use X-rays; it is characterized in that the first inspection device is an X-ray nanometer shape measurement device that uses X-ray scattering at a small angle, and faces the The first inspection device outputs one of the measurement data obtained by the second inspection device and the analysis result of the measurement data. The first inspection device uses the measurement data obtained by the second inspection device and the One of the analysis results of the measurement data is used to inspect the fine structure on the surface of the semiconductor wafer. A composite inspection system, comprising: a first inspection device, which inspects the fine structure on the surface of the semiconductor wafer based on X-ray measurement data obtained by irradiating the surface of the semiconductor wafer with X-rays; and a second inspection device, which Inspection of the fine structure on the surface of the semiconductor wafer by a measurement method that does not use X-rays; an analysis server that connects the first inspection device and the second inspection device; and a host computer in a semiconductor manufacturing plant Handling process control; characterized in that the first inspection device is an X-ray nanometer shape measuring device using small-angle X-ray scattering, and includes: a measuring unit that irradiates the surface of the semiconductor wafer with X-rays to measure Scattering intensity; fitting part, which assumes that the fine structure on the surface of the semiconductor wafer constitutes a sample model of a periodic structure, and the periodic structure is formed along a direction perpendicular to the surface. Layers with different refractive indices, and unit structures are periodically arranged in the layer along a direction parallel to the surface, and the effects of refraction and reflection due to the multiple layers formed on the sample model are considered. Calculate the scattered intensity of X-rays scattered by the above-mentioned fine structure, and fit the scattered intensity of X-rays calculated according to the above sample model to the above-mentioned measured scattering intensity; the determination part is based on the simulation of the above-mentioned fitting part The combined result is used to determine the optimal value of the parameter specifying the shape of the unit structure; and an output unit that uses at least a part of the analytical value including the optimal value of the parameter specifying the shape of the unit structure as the output value, and To output; and one of the X-ray measurement data obtained by the first inspection device and the analysis result of the X-ray measurement data, and the data obtained by the second inspection device and the analysis result of the data One of them is output to the analysis server in accordance with the standardization agreement of the semiconductor manufacturing plant. The analysis server uses the analysis result of the first inspection device to analyze the semiconductor based on the measurement data of the second inspection device. The fine structure on the surface of the wafer. A composite inspection system, comprising: a first inspection device that inspects the fine structure on the surface of the semiconductor wafer based on X-ray measurement data obtained by irradiating the surface of the semiconductor wafer with X-rays; and a second inspection device, It inspects the fine structure on the surface of the semiconductor wafer by a measurement method that does not use X-rays; it is characterized in that the first inspection device is an X-ray nanometer shape measuring device that uses X-ray scattering at a small angle, and includes There are: measuring part, which irradiates the surface of the above-mentioned semiconductor wafer with X-rays to measure the intensity of scattering Degree; fitting part, which assumes that the fine structure on the surface of the semiconductor wafer constitutes a sample model of a periodic structure, the periodic structure is formed in one or more layers along a direction perpendicular to the surface, and in the layer The unit structures are periodically arranged along a direction parallel to the surface, and the unit structures have a positional change from a strict periodic position, and the positional change is not dependent on the mutual positional difference but is random, and the above-mentioned unit The structure system is formed by the same physical area and space area in the above layer. The scattering intensity of the X-rays generated by the physical area is calculated, and the scattering intensity of the X-rays calculated by the sample model is simulated. The scattering intensity suitable for the above measurement; the determination unit, which determines the optimal value of the parameter specifying the shape of the unit structure based on the fitting result of the fitting unit; and the output unit, which is based on a predetermined agreement, At least a part of the analytical value including the optimal value of the parameter specifying the shape of the unit structure is output as an output value; and the X-ray measurement data obtained by the first inspection device and the X-ray measurement are used One of the analysis results of the data, the data obtained by the second inspection device and one of the analysis results of the data, analyze the fine structure on the surface of the semiconductor wafer. The compound inspection system according to any one of claims 1 to 6, wherein the first inspection device is provided with: a sample table on which a semiconductor wafer to be inspected is arranged; and an image observation section whose observation is arranged on the sample table The image of the fine structure on the surface of the semiconductor wafer; the positioning mechanism is based on the image observation portion on the surface of the semiconductor wafer The microstructure image observation result is controlled so that the sample table is moved along the orthogonal two directions, the height direction, and the in-plane rotation direction on the horizontal plane; the goniometer is included and is arranged on the sample The first and second rotating members that independently rotate along an imaginary plane perpendicular to the surface of the semiconductor wafer with the rotation axis included in the same plane as the surface of the above-mentioned semiconductor wafer of the stage; X-ray irradiation unit , Which is mounted on the first rotating member; an X-ray detector, which is mounted on the second rotating member; and an analysis unit that digitizes the X-ray pattern detected by the X-ray detector, and Analyze; Furthermore, the sample table and the positioning mechanism are formed with a material with a small X-ray absorption coefficient that allows X-rays to penetrate, or set as a cavity, and the first rotating member is set to be able to move from a horizontal position The structure rotated to the bottom of the sample table, the X-ray irradiation unit irradiates X-rays perpendicularly from the bottom to the surface of the semiconductor wafer arranged on the upper surface of the sample table, and the positioning mechanism causes the semiconductor wafer to perform in-plane Rotating, the above-mentioned X-ray detector includes a configuration for detecting scattered X-rays penetrating the surface of the semiconductor wafer. The composite inspection system of claim 7, wherein the first inspection device measures scattered X-rays from the surface of the semiconductor wafer by the X-ray detector. The compound inspection system of claim 7, wherein the first inspection device is equipped with a two-dimensional X-ray detector as the X-ray detector. The composite inspection system of claim 7, wherein the second inspection device is composed of an optical inspection device. The compound inspection system of claim 7, wherein the second inspection device is composed of an inspection device using a scanning electron microscope. The compound inspection system of claim 7, wherein, as the analytical value output from the first inspection device, the interval between the periodic structures of the sample model is included. Such as the composite inspection system of claim 7, wherein when the periodic structure of the sample model includes a repeated structure with holes, the hole diameter is included as the analytical value output from the first inspection device. The composite inspection system of any one of claims 1 to 3, wherein the second inspection device is configured to use X-ray measurement data or analysis results of X-ray measurement data obtained by the first inspection device to verify the inspection result. Such as the composite inspection system of claim 4, wherein the first inspection device is configured to use the measurement data or the analysis result of the measurement data obtained by the second inspection device to verify the inspection result. Such as the composite inspection system of claim 1, wherein the second inspection device uses an optical inspection device, and when the measurement data of the second inspection device shows an abnormal value, it is compared with the measurement data of the first inspection device When the measurement data of the first inspection device is normal, the measurement data of the second inspection device is treated as an abnormal value caused by external interference. If the measurement data of the first inspection device is also abnormal, the Handle the abnormal shape of the inspection object. The composite inspection system of claim 14, wherein the second inspection device uses an inspection device using a scanning electron microscope, the first inspection device measures a certain part of the fine structure on the surface of the semiconductor wafer, and the The second inspection device measures the Obtain the spectral profile of the same part of the microstructure, compare the two measurement data, verify the spectral profile acquired by the second inspection device, and set the CD value. The composite inspection system of claim 4, wherein the second inspection device uses an inspection device using a scanning electron microscope, and an observation image of the fine structure on the surface of the semiconductor wafer is obtained by the second inspection device, and , The shape model of the fine structure on the surface of the semiconductor wafer is specified by the first inspection device, the observation image of the second inspection device is fitted with the shape model of the first inspection device, and the shape is used The model is used to estimate the contour position of the pattern shape formed on the semiconductor wafer as the measurement object, and based on the estimated contour position, the measurement of the first inspection device and the data analysis of the measurement result are performed. The compound inspection system of claim 1, wherein the first inspection device is configured as follows, that is, it is provided with: a sample table on which the semiconductor wafer is arranged; and a positioning mechanism that drives the semiconductor wafer arranged on the sample table Circle; an optical microscope, which captures an image of the surface of the semiconductor wafer disposed on the sample table; an image recognition circuit, which recognizes the image of the surface of the semiconductor wafer captured by the optical microscope; and storage Section; the storage section stores: the characteristics of the surface of the semiconductor wafer, which can be specified by the image recognition circuit from the image information from the optical microscope; and the position information of the measured part, which is based on the characteristics Pre-set as a benchmark; For the surface of the semiconductor wafer arranged on the sample stage, the image recognition circuit recognizes the above characteristics based on the image information from the optical microscope, and is based on the predetermined measurement based on the recognized characteristics. The position information of the part is to arrange the measured part of the semiconductor wafer to the inspection position to perform X-ray inspection. The second inspection device is an inspection device that measures non-destructively on-line during the semiconductor manufacturing step.

Images