TWI746220B - Laser cleaning apparatus and method - Google Patents

Abstract

A laser cleaning apparatus and method are disclosed. A laser module provides or emits a laser beam. A wavelength switching module outputs a first laser beam with a first wavelength according to the laser beam, and then projects the first laser beam onto an object through at least one hole of a mask module and a first lens of a lens switching module to clean the object. The wavelength switching module switches the first laser beam with the first wavelength to a second laser beam with a second wavelength, and then projects the second laser beam onto the object through the hole of the mask module and a second lens of the lens switching module to clean the object again. The hole of the mask module can define a pattern of the first laser beam or the second laser beam projected on the object, and the first lens and the second lens match the first laser beam and the second laser beam respectively.

Description

Laser cleaning device and method

This disclosure relates to a cleaning technology, in particular to a laser cleaning device and method for cleaning objects.

The wafer probe tester can judge the quality of integrated circuits (IC) and save the cost of packaging. At present, semiconductor companies mainly use mechanical grinding probes to restore the electrical properties of the probe card (test strip). The height difference between the probes is prone to the risk of hitting the needle. Hopefully, laser cleaning technology can be introduced.

In addition, the probe card is cleaned with a laser beam. After cleaning, tin oxide (SnO ₂ ) will be generated at the tip of the probe card. Tin oxide will affect the electrical properties of the probe card. It is still necessary to use a mechanical grinding pin for tin oxide The stripping. However, contact-type mechanical polishing cannot clean high-density (diameter <30μm) probe cards, and the contact-type cleaning method does not meet the requirements of the integrated circuit manufacturing process. Therefore, it is expected that the probe card can be cleaned by a laser method, so as to eliminate the risk of strikers due to the height difference between the probes.

In addition, in the equipment of the integrated circuit manufacturing process, because the probe card remains fixed, it is necessary to use the laser beam to conduct the flying light path in the equipment of the integrated circuit manufacturing process. However, both the probe and the circuit of the probe card are located on the same side of the carrier, and the distance between the probes (or the distance between the probe and the circuit) is getting smaller and smaller, so the laser beam is used to clean the probe of the probe card When the laser beam is easy to clean or damage the circuit of the probe card, the circuit of the probe card will be removed after being cleaned by the laser beam for many times, which will affect the normal use of the probe card or the normal operation of the circuit.

Therefore, how to provide an innovative laser cleaning technology to help define the pattern of the laser beam projected on the object (such as a test strip or probe card, etc.), or to accurately focus the laser beam on the cleaning part of the object (Such as test strip or probe card probe, etc.), or can avoid or reduce damage to the non-clean parts of the object (such as the test strip or probe card circuit or thin film resistance, etc.), has become a skilled person in the art A big subject.

The present disclosure provides a laser cleaning device and a laser cleaning device and method, which can define the pattern of the laser beam projected on an object (such as a test strip or a probe card, etc.), or can focus the laser beam more accurately on the object Clean parts (such as test strips or probes of probe cards, etc.), or non-clean parts that can avoid or reduce damage to objects (such as test strips or probe card circuits or thin-film resistors, etc.).

The laser cleaning device of the present disclosure includes: a laser module, which provides a laser beam; a wavelength switching module, which outputs a first laser beam with a first wavelength or has a A second laser beam with a second wavelength different from the first wavelength; the mask module has at least one through hole, and at least one through hole of the mask module is used to define the first laser beam with the first wavelength or A pattern projected on the object by a second laser beam with a second wavelength; and a lens group switching module having a first lens group and a second lens group, and the first lens group and the second lens group of the lens group switching module The mirror group is respectively matched with a first laser beam having a first wavelength and a second laser beam having a second wavelength, wherein the first laser beam having the first wavelength passes through at least one through hole and the mirror of the mask module The first lens group of the group switching module is projected onto the object to clean the object, and the wavelength switching module switches the first laser beam with the first wavelength to the second laser beam with the second wavelength, and then will have The second laser beam of the second wavelength passes through at least one through hole of the mask module and the second lens group of the lens group switching module to be projected onto the object to clean the object.

The laser cleaning method of the present disclosure includes: a laser beam is provided by a laser module; the wavelength switching module outputs a first laser beam with a first wavelength according to the laser beam from the laser module, so that The first laser beam of the first wavelength passes through at least one through hole of the mask module and the first lens group of the lens group switching module to be projected onto the object to clean the object, wherein at least one through hole of the mask module is used for Define the pattern of the first laser beam with the first wavelength projected on the object, and the first lens group of the lens group switching module matches the first laser beam with the first wavelength; and the wavelength switching module will have The first laser beam with the first wavelength is switched to the second laser beam with a second wavelength different from the first wavelength to pass the second laser beam with the second wavelength through at least one through hole of the mask module and The second lens group of the lens group switching module is projected onto the object to clean the object, wherein at least one through hole of the mask module is used to define a pattern projected on the object by a second laser beam with a second wavelength, and The second lens group of the lens group switching module matches the second laser beam with the second wavelength.

In order to make the above-mentioned features and advantages of the present disclosure more comprehensible, embodiments are specifically described below in conjunction with the accompanying drawings. In the following description, the additional features and advantages of the present disclosure will be partially explained, and these features and advantages will be partly obvious from the description, or can be learned through the practice of the present disclosure. The features and advantages of the present disclosure are realized and achieved by means of the elements and combinations specifically pointed out in the scope of the patent application. It should be understood that both the foregoing general description and the following detailed description are only illustrative and explanatory, and are not intended to limit the scope of the present disclosure.

The following describes the implementation of the present disclosure through specific specific implementations. Those familiar with this technology can easily understand the other advantages and effects of the present disclosure from the content disclosed in this specification, and can also be implemented by other different specific implementations. Or apply.

1A and 1B are schematic diagrams of an embodiment of the laser cleaning device 1 of the present disclosure, and FIG. 2 is a diagram illustrating the related mask module 40 and the first lens group (lens) in the laser cleaning device 1 of FIG. 1A or FIG. 1B 51. An enlarged schematic view of the second lens group 52, the nozzle module 60, the object 70, etc.

As shown in FIGS. 1A, 1B and 2, the laser cleaning device 1 includes at least a laser module 10, a wavelength switching module 20, a mask module 40, and a lens group switching module 50, and may further include an optical path The conduction module 30, the nozzle module 60, the control module 80 or the mobile module 90. The mask module 40 can correspond to the lens group switching module 50, the nozzle module 60 and the object 70 in sequence, and the lens group switching module 50 can be located between the mask module 40 and the nozzle module 60, but Not limited to this.

The laser module 10 can be a laser generator or a laser transmitter, such as an ultraviolet laser, a green laser, a near-infrared laser, or a far-infrared laser. The optical path transmission module 30 can be an optical element A3, a plurality of optical elements A1-A3 (such as an optical lens of a mirror), a light guide arm, an optical fiber, or any combination thereof. The lens group switching module 50 (or called the lens switching module) may include a first lens group 51 (or called a first lens) and a second lens group 52 (or called a second lens), and the first lens The group 51 or the second lens group 52 can be one lens or consist of multiple lenses (such as convex lenses and concave lenses). The nozzle module 60 can be an inhalation nozzle, a blowing nozzle, or an inhalation and blowing nozzle, etc. The opening 61 of the nozzle module 60 can be an opening or a hole. The control module 80 can be a controller, a control chip, a processor (such as a microprocessor/central processing unit), a computer, a server (such as a network/cloud computer), control software, or any combination thereof. The mobile module 90 can be a mobile platform, a mobile component, or a movable carrying platform, etc. However, this disclosure is not limited to this.

The laser module 10 can provide (emit) a (e.g., single) laser beam L, and the wavelength switching module 20 can output a first laser beam with a first wavelength according to the laser beam L from the laser module 10 L1 or a second laser beam L2 having a second wavelength different from the first wavelength. For example, the laser beam L is an infrared laser beam with a wavelength of 1064 nm (nanometers), and the first laser beam L1 with a first wavelength is a green laser beam with a wavelength of 532 nm (nanometers), and has a The two-wavelength second laser beam L2 is an infrared laser beam with a wavelength of 1064 nm.

The mask module 40 may have at least one or more (such as two, three, or more than four) through holes 41, and at least one through hole 41 of the mask module 40 is used to define or define a first mine having a first wavelength The beam L1 or the second laser beam L2 with the second wavelength is projected onto the pattern 74 on the object 70 (see FIG. 4B). The first lens group 51 and the second lens group 52 of the lens group switching module 50 can respectively correspond to (match) the first laser beam L1 having the first wavelength and the second laser beam L2 having the second wavelength. The shape of the through hole 41 of the mask module 40 can match the shape of the cleaning part 71 of the object 70. For example, the shape of the through hole 41 or the cleaning part 71 is rectangular, square, circular, elliptical, triangular, trapezoidal, polygonal (such as Pentagonal shape), curved shape (such as C shape, S shape or L shape), funnel shape, regular shape, irregular shape, etc. The object 70 (such as a test strip or a probe card) can be kept fixed and disposed above the nozzle module 60 and the opening 61 thereof. The object 70 may include a clean part 71 (such as a test strip or multiple probes of a probe card, etc.), a non-clean part 72 (such as a test strip or a circuit or a thin film resistor of the probe card, etc.), and a carrier 73 (such as a substrate, Carriers, circuit boards, etc.), the clean part 71 and the non-clean part 72 are adjacent (connected to each other) and located on the same side of the carrier 73 (the lower side).

The first laser beam L1 with the first wavelength can pass through at least one through hole 41 of the mask module 40 and the first lens group 51 of the lens group switching module 50 to be projected onto the object 70 to clean the object (first time) 70, and the wavelength switching module 20 can switch the first laser beam L1 with the first wavelength to the second laser beam L2 with the second wavelength, and then pass the second laser beam L2 with the second wavelength through the light At least one through hole 41 of the cover module 40 and the second lens group 52 of the lens group switching module 50 are projected onto the object 70 to clean the object 70 (second time or again). Conversely, the second laser beam L2 with the second wavelength can also pass through at least one through hole 41 of the mask module 40 and the first lens group 51 of the lens group switching module 50 to be projected onto the object 70 (first time ) The object 70 is cleaned, and the wavelength switching module 20 can switch the second laser beam L2 with the second wavelength to the first laser beam L1 with the first wavelength, and then the first laser beam with the first wavelength L1 is projected onto the object 70 through at least one through hole 41 of the mask module 40 and the second lens group 52 of the lens group switching module 50 to clean the object 70 (second time or again).

The object 70 can be a test strip, a probe card, or various other objects. The first laser beam L1 having the first wavelength or the second laser beam L2 having the second wavelength can clean the cleaning part 71 of the object 70. For example, the first laser beam L1 with the first wavelength can clean the metal contamination layer (such as tin Sn) on the test strip or probe card, and the second laser beam L2 with the second wavelength can clean the test strip or The tin oxide (SnO2) on the probe card, of which tin oxide (SnO2) can be transparent and non-conductive.

The wavelength switching module 20 may have at least one frequency doubling crystal 23 to convert the laser beam L provided or emitted by the laser module 10 (such as an infrared light laser beam with a wavelength of 1064 nm) through the frequency doubling crystal 23 into A first laser beam L1 with a first wavelength (such as a green laser beam with a wavelength of 532 nm). For example, the wavelength switching module 20 may sequentially have a mirror 21, a mirror 22, a frequency doubling crystal 23, a lens 24, a mirror 25, and a mirror 26, and the laser beam L provided or emitted by the laser module 10 The first laser beam L1 with the first wavelength is generated through the mirror 21 and the mirror 22 to the frequency doubling crystal 23, and the first laser beam L1 with the first wavelength is compensated by the divergence angle of the lens 24, and then The first laser beam L1 with the first wavelength is output to the optical element A1 or the optical path transmission module 30 through the mirror 25 and the mirror 26 in sequence.

The mask module 40 may have a plurality of through holes 41 of the same or different shapes. The plurality of through holes 41 of the mask module 40 respectively correspond to a plurality of cleaning parts 71 of the object 70 (such as test strips or probe cards). One probe), and one through hole 41 may correspond to at least one cleaning part 71. At the same time, the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength can pass through the at least one through hole 41 of the mask module 40 to be projected to the clean part 71 of the object 70 without being projected Or reduce the projection to the non-clean part 72 of the object 70 (such as the circuit or film resistance of a test strip or a probe card).

The lens group switching module 50 can switch the first lens group through the translation mode of a translator (such as a translation mechanism or a horizontal shifter, not shown) or a rotation mode of a rotator (such as a rotating mechanism or a horizontal rotator, not shown) 51 and the second lens group 52 to adjust the first lens group 51 or the second lens group 52 between the mask module 40 and the object 70.

The wavelength of the first lens group 51 of the lens group switching module 50 can be the same or matched to the first wavelength of the first laser beam L1, and the wavelength of the second lens group 51 of the lens group switching module 50 can be the same or matched to The second wavelength of the second laser beam L2. For example, the first lens group 51 and the second lens group 52 of the lens group switching module 50 are a lens group with a wavelength of 532 nm and a lens group with a wavelength of 1064 nm, respectively, and the first wavelength and the second laser beam of the first laser beam L1 The second wavelength of the radiation beam L2 has a wavelength of 532 nm and a wavelength of 1064 nm, respectively.

The optical path transmission module 30 can transmit the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength switched by the wavelength switching module 20 to the mask module 40 (through hole 41) , So that the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength sequentially passes through the mask module 40 (through hole 41) and the lens group switching module 50 (first mirror The group 51 or the second mirror group 52) and the nozzle module 60 are projected onto the object 70. At the same time, the nozzle module 60 can remove dust or debris generated or dropped by the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength when cleaning the object 70.

The wavelength switching module 20 can switch the first laser beam L1 with the first wavelength to the second laser beam L2 with the second wavelength to generate the switching signal B, which is controlled by the control module 80 according to the wavelength switching module 20 The generated switching signal B excites the lens group switching module 50 so that the lens group switching module 50 switches the first lens group 51 between the mask module 40 and the object 70 to the second lens group 52. Conversely, the wavelength switching module 20 can also switch the second laser beam L2 with the second wavelength to the first laser beam L1 with the first wavelength to generate the switching signal B, so that the control module 80 can switch the mode according to the wavelength. The switching signal B generated by the group 20 excites the lens group switching module 50 so that the lens group switching module 50 switches the second lens group 52 between the mask module 40 and the object 70 to the first lens group 51.

The mask module 40, the lens group switching module 50, and the suction nozzle module 60 can be sequentially located on the moving module 90 (such as above) or connected to the moving module 90, so that the moving module 90 moves the mask module 40 , The lens group switching module 50 and the suction nozzle module 60, so that the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength sequentially passes through the mask module 40 (through hole 41), lens group switching module 50 (first lens group 51 or second lens group 52), nozzle module 60 (opening 61) corresponding to the cleaning part 71 of the object 70 (such as the test strip or probe card Probe).

FIG. 3 is a schematic flow diagram of the laser cleaning method disclosed in the disclosure, and is described with reference to FIG. 1A, FIG. 1B and FIG. 2. At the same time, the main content of this laser cleaning method is as follows, and the rest of the content is the same as the above description of FIG. 1A, FIG. 1B and FIG. 2, and will not be repeated here.

As shown in step S1 of FIG. 3 and FIG. 1A, the laser module 10 provides or emits a (such as a single) laser beam L (such as an infrared laser beam with a wavelength of 1064 nm).

As shown in step S2 of FIG. 3 and FIG. 1A, the wavelength switching module 20 outputs a first laser beam L1 having a first wavelength according to the laser beam L from the laser module 10 (for example, a green light having a wavelength of 532nm) Laser beam) to project the first laser beam L1 with the first wavelength through at least one (eg three) through hole 41 of the mask module 40 and the first lens group 51 of the lens group switching module 50 Go to the object 70 to clean the object 70 (for the first time). At least one through hole 41 of the mask module 40 is used to define or define the pattern 74 projected on the object 70 by the first laser beam L1 having the first wavelength (see FIG. 4B), and the first lens group switching module 50 The mirror group 51 matches (corresponds to) the first laser beam L1 having the first wavelength.

As shown in step S3 of FIG. 3 and FIG. 1B, the wavelength switching module 20 turns the mirror 21 from an oblique direction (such as a 45 degree angle) to a horizontal direction to switch the first laser beam L1 having the first wavelength A second laser beam L2 with a second wavelength different from the first wavelength (such as an infrared laser beam with a wavelength of 1064nm) is formed, so that the second laser beam L2 with the second wavelength passes through the mask module At least one through hole 41 of 40 and the second lens group 52 of the lens group switching module 50 are projected onto the object 70 to clean the object 70 (second time or again). At least one through hole 41 of the mask module 40 is also used to define or define the pattern 74 of the second laser beam L2 having the second wavelength projected on the object 70 (see FIG. 4B), and the second laser beam L2 of the lens group switching module 50 The two mirror groups 52 match or correspond to the second laser beam L2 having the second wavelength.

The laser cleaning method may include converting the laser beam L provided or emitted by the laser module 10 into the first laser beam L1 with the first wavelength by the frequency doubling crystal 23 of the wavelength switching module 20, and may also include The lens group switching module 50 switches the first lens group 51 and the second lens group 52 through translation or rotation to adjust the first lens group 51 or the second lens group 52 between the mask module 40 and the object 70 .

The first laser beam L1 with the first wavelength and the second laser beam L2 with the second wavelength can be a green laser beam with a wavelength of 532nm and an infrared laser beam with a wavelength of 1064nm, respectively, and the mirror group is switched The first lens group 51 (first lens) and the second lens group 52 (second lens) of the module 50 (lens switching module) can be a lens group (lens) with a wavelength of 532nm and a lens group with a wavelength of 1064nm, respectively (lens).

The laser cleaning method may include transmitting the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength switched by the wavelength switching module 20 to the mask module by the light path conduction module 30 40 (through hole 41), so that the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength sequentially passes through the mask module 40 (through hole 41) and the lens group switching mode The group 50 (the first lens group 51 or the second lens group 52) is projected onto the object 70.

The laser cleaning method may include the suction nozzle module 60 removing dust or debris generated or dropped by the first laser beam L1 with the first wavelength or the second laser beam L2 with the second wavelength when cleaning the object 70 .

The laser cleaning method may include the wavelength switching module 20 switching the first laser beam L1 with the first wavelength to the second laser beam L2 with the second wavelength to generate the switching signal B, so that the control module 80 can follow The switching signal B generated by the wavelength switching module 20 excites the lens group switching module 50, so that the lens group switching module 50 switches the first lens group 51 between the mask module 40 and the object 70 to the second lens Group 52.

The mask module 40 and the lens group switching module 50 can be located on the mobile module 90 or connected to the mobile module 90, so that the mask module 40 and the lens group switching module 50 can be moved by the mobile module 90 so as to have the first The first laser beam L1 of one wavelength or the second laser beam L2 of the second wavelength passes through the mask module 40 and the lens group switching module 50 to correspond to the cleaning part 71 of the object 70.

FIG. 4A shows that when the first lens group 51 is used in the disclosure to match the first laser beam L1 with the first wavelength and the second laser beam L2 with the second wavelength switched by the wavelength switching module 20, the first The schematic diagram of the error between the laser beam L1 and the second laser beam L2 is illustrated with reference to FIG. 1A, FIG. 1B and FIG. 2.

As shown in FIG. 4A, when a first lens group 51 (such as a lens group with a wavelength of 532nm) is used to match a first laser beam L1 with a first wavelength (such as a green laser beam with a wavelength of 532nm) and a first laser beam L1 with a wavelength of 532nm, respectively When the second laser beam L2 with two wavelengths (for example, an infrared laser beam with a wavelength of 1064nm), the width W1 and the pitch P1 of the through hole 41 of the mask module 40 are, for example, 1.2 mm (centimeters) and 3.6 mm, respectively. The width W2 and pitch P2 of the pattern 74 projected on the object 70 by the first laser beam L1 having the first wavelength are, for example, 1.21 mm and 3.82 mm, respectively, and the second laser beam L2 having the second wavelength is projected on the object 70 The width W3 and the pitch P3 of the upper pattern 74 are, for example, 1.24 mm and 4.24 mm, respectively. Therefore, the error between the width W2 of the pattern 74 projected by the first laser beam L1 and the width W3 of the pattern 74 projected by the second laser beam L2 is about 2.4%, and the difference between the width W2 of the pattern 74 projected by the first laser beam L1 The error between the distance P2 between the patterns 74 and the distance P3 between the patterns 74 projected by the second laser beam L2 is about 9.9%.

4B shows the use of the first lens group 51 and the second lens group 52 switched by the lens group switching module 50 in this disclosure, respectively, in combination with the first laser beam L1 having the first wavelength switched by the wavelength switching module 20 The schematic diagram of the error between the first laser beam L1 and the second laser beam L2 when compared with the second laser beam L2 having the second wavelength is described with reference to FIGS. 1A, 1B and 2.

As shown in FIG. 4B, when the first lens group 51 (for example, a lens group with a wavelength of 532 nm) and a second lens group 52 (for example, a lens group with a wavelength of 1064 nm) are used to match the first laser beam L1 with the first wavelength, respectively (Such as a green laser beam with a wavelength of 532nm) and a second laser beam L2 with a second wavelength (such as an infrared laser beam with a wavelength of 1064nm), the width W1 of the through hole 41 of the mask module 40 The width W2 and the pitch P2 of the pattern 74 projected on the object 70 by the first laser beam L1 with the first wavelength are, for example, 1.2mm and 3.6mm, respectively, and the width W2 and the pitch P2 are, for example, 1.21mm and 3.82mm, respectively, and have a second The width W3 and the pitch P3 of the pattern 74 projected on the object 70 by the second laser beam L2 of the wavelength are, for example, 1.22 mm and 3.89 mm, respectively. Therefore, the error between the width W2 of the pattern 74 projected by the first laser beam L1 and the width W3 of the pattern 74 projected by the second laser beam L2 is about 0.82%, and the difference between the width W2 of the pattern 74 projected by the first laser beam L1 The error between the distance P2 between the patterns 74 and the distance P3 between the patterns 74 projected by the second laser beam L2 is about 1.8%.

It can be seen that, as shown in FIG. 4A, when the first lens group 51 is used to match the first laser beam L1 with the first wavelength and the second laser beam L2 with the second wavelength, the first laser beam L1 is projected The error between the width W2 of the pattern 74 and the width W3 of the pattern 74 projected by the second laser beam L2 is about 2.4% (less than 3%), and the distance between the pattern 74 projected by the first laser beam L1 is P2 The error between the distance P3 and the pattern 74 projected by the second laser beam L2 is about 9.9% (greater than 3%), so this matching method will cause the distance P2 and the distance P3 between the pattern 74 projected by the first laser beam L1 The error between the pattern 74 projected by the second laser beam L2 and the distance P3 is relatively large (such as greater than 3%). Therefore, it is not a better matching method, and it is easy to cause the first laser beam L1 or the second laser beam. L2 is projected to the non-cleaning part 72 of the object 70 to be removed or damaged.

In contrast, as shown in FIG. 4B, when the first lens group 51 and the second lens group 52 are used to match the first laser beam L1 with the first wavelength and the second laser beam L2 with the second wavelength, the first The error between the width W2 of the pattern 74 projected by a laser beam L1 and the width W3 of the pattern 74 projected by the second laser beam L2 is about 0.82% (less than 3%), and the first laser beam L1 The error between the distance P2 between the projected pattern 74 and the distance P3 between the pattern 74 projected by the second laser beam L2 is about 1.8% (less than 3%), so this combination will cause the first laser beam L1 to project The distance P2 between the patterns 74 and the distance P3 between the patterns 74 projected by the second laser beam L2 and the distance P3 between the patterns 74 projected by the second laser beam L2 have a small error (such as less than 3%), which is a better matching method, and it is not easy to cause the first laser beam L1 Or the second laser beam L2 is projected to the non-clean part 72 of the object 70 to be removed or damaged.

FIG. 5 is the result of cleaning an object 70 (such as a test strip or a probe of a probe card) using a first laser beam L1 having a first wavelength and a second laser beam L2 having a second wavelength in the disclosure. Image map, and refer to Fig. 1A, Fig. 1B and Fig. 2 for description.

As shown on the left side of FIG. 5, the surface of the object 70 (such as the test strip or the probe of the probe card) has a metal dirty layer (such as tin Sn). In addition, as shown in the middle of FIG. 5, after the first laser beam L1 with the first wavelength is used to clean the metal dirt layer (such as tin Sn) on the surface of the object 70 for the first time, the surface of the object 70 is formed with Tin oxide (SnO ₂ ). Then, as shown on the right side of FIG. 5, after the object 70 is cleaned for the second time with the second laser beam L2 having the second wavelength, the tin oxide (SnO ₂ ) on the surface of the object decreases accordingly.

In summary, the laser cleaning device and method of the present disclosure can at least have the following features, advantages or technical effects.

1. The wavelength switching module of the present disclosure can output the first laser beam with the first wavelength or the second laser beam with the second wavelength according to the laser beam of the laser module, and the second laser beam of the lens group switching module A lens group and a second lens group match or correspond to the first laser beam and the second laser beam, so the first laser beam or the second laser beam passes through the through hole of the mask module and the first lens group (Second lens group) When cleaning the object, the through hole of the mask module is helpful to define or define the first laser beam or the second laser beam projected onto the object (such as test strip or probe card, etc.) Patterns, and the first laser beam or the second laser beam can be more accurately focused on the clean part of the object (such as the test piece or the probe of the probe card).

2. In the present disclosure, the first laser beam with the first wavelength or the second laser beam with the second wavelength can pass through at least one or more through holes of the mask module to project to at least one or more of the object Clean parts (such as the probe of the test strip or probe card), but not project or reduce the projection to the non-clean part of the object (such as the circuit or film resistance of the test strip or probe card), so it can be cleaned in the clean object It is helpful to avoid or reduce damage to the non-clean parts of the object, so that the non-clean parts of the object can be used or operated normally.

3. In this disclosure, the first lens group and the second lens group switched by the lens group switching module are respectively matched with the first laser beam with the first wavelength and the laser beam with the second wavelength switched by the wavelength switching lens group. In the case of the second laser beam, this matching method will make the error between the distance between the patterns projected by the first laser beam and the distance between the patterns projected by the second laser beam smaller (for example, less than 3%). It is a better matching method, and it is not easy to cause the first laser beam or the second laser beam to be projected to the non-clean part of the object to be removed or damaged.

4. In the present disclosure, the first laser beam with the first wavelength can clean the dirty metal layer (such as tin Sn) on the surface of the object, and the second laser beam with the second wavelength can clean the surface of the object Tin oxide (SnO ₂ ).

5. The laser cleaning device and method disclosed in the present disclosure can be used to clean test strips or probe cards as well as various objects, such as semiconductor devices, integrated circuits, circuit boards, motherboards or other objects .

The above implementation forms are only illustrative of the principles, features and effects of this disclosure, and are not intended to limit the scope of implementation of this disclosure. Anyone who is familiar with this technique can deal with the above without violating the spirit and scope of this disclosure. Modifications and changes to the implementation form. Any equivalent changes and modifications made using the content disclosed in this disclosure should still be covered by the scope of the patent application. Therefore, the scope of protection of the rights disclosed in this disclosure should be as listed in the scope of the patent application.

1: Laser cleaning device 10: Laser module 20: Wavelength switching module 21, 22, 25, 26: mirror 23: Frequency doubling crystal 24: lens 30: Optical path transmission module 40: Mask module 41: Through hole 50: Mirror switch module 51: The first mirror group 52: Second lens group 60: Nozzle module 61: opening 70: Object 71: Clean parts 72: non-clean parts 73: Carrier 74: Pattern 80: control module 90: mobile module A1, A2, A3: optical components B: Switch signal L: Laser beam L1: The first laser beam L2: second laser beam P1, P2, P3: pitch S1 to S4: steps W1, W2, W3: width

1A and 1B are schematic diagrams of embodiments of the laser cleaning device disclosed in the disclosure; FIG. 2 is an enlarged schematic diagram showing the mask module, the first/second lens group, the nozzle module, and the object in the laser cleaning device of FIG. 1A or FIG. 1B; Figure 3 is a schematic flow diagram of the disclosed laser cleaning method; 4A shows the first laser beam with the first wavelength and the second laser beam with the second wavelength that are switched by the wavelength switching lens group in the first lens group in this disclosure, the first laser beam and Schematic diagram of the error of the second laser beam; FIG. 4B shows the first lens group and the second lens group switched by the lens group switching module used in the disclosure, respectively, with the first laser beam having the first wavelength and the second wavelength switched by the wavelength switching lens group. Schematic diagram of the error between the first laser beam and the second laser beam when the second laser beam is used; and FIG. 5 is an image diagram formed by using a first laser beam with a first wavelength and a second laser beam with a second wavelength to clean an object in the disclosure.

1: Laser cleaning device

10: Laser module

20: Wavelength switching module

21, 22, 25, 26: mirror

23: Frequency doubling crystal

24: lens

30: Optical path transmission module

40: Mask module

41: Through hole

50: Mirror switch module

51: The first mirror group

52: Second lens group

60: Nozzle module

61: opening

70: Object

71: Clean parts

72: non-clean parts

73: Carrier

80: control module

90: mobile module

A1, A2, A3: optical components

B: Switch signal

L: Laser beam

L1: The first laser beam

Claims (20)

A laser cleaning device includes: The laser module provides a laser beam; The wavelength switching module outputs a first laser beam with a first wavelength or a second laser beam with a second wavelength different from the first wavelength according to the laser beam from the laser module; The mask module has at least one through hole, and the at least one through hole of the mask module is used to define a first laser beam with the first wavelength or a second laser beam with the second wavelength to be projected to the object On the pattern; and The lens group switching module has a first lens group and a second lens group, and the first lens group and the second lens group of the lens group switching module are respectively matched to the first laser beam and the second lens group having the first wavelength A second laser beam having the second wavelength, Wherein, the first laser beam having the first wavelength passes through at least one through hole of the mask module and the first lens group of the lens group switching module to be projected onto the object to clean the object, and the wavelength switching The module switches the first laser beam with the first wavelength to the second laser beam with the second wavelength, and then passes the second laser beam with the second wavelength through at least one pass of the mask module The hole and the second lens group of the lens group switch module are projected onto the object to clean the object. The laser cleaning device according to claim 1, wherein the object is a test strip or a probe card, and the first laser beam having the first wavelength cleans the metal dirty layer on the test strip or the probe card And the second laser beam with the second wavelength cleans the tin oxide on the test strip or probe card. The laser cleaning device according to claim 1, wherein the wavelength switching module has a frequency doubling crystal to convert the laser beam provided by the laser module to have the first The first laser beam of wavelength. The laser cleaning device according to claim 1, wherein the photomask module has a plurality of through holes of the same or different shapes, and the through holes of the photomask module respectively correspond to the plurality of through holes of the object Clean the part. The laser cleaning device according to claim 1, wherein the first laser beam having the first wavelength or the second laser beam having the second wavelength passes through at least one through hole of the mask module to project To the clean part of the object without projecting or reducing the projection to the non-clean part of the object. The laser cleaning device according to claim 1, wherein the lens group switching module switches the first lens group and the second lens group by translation or rotation, so that the first lens group or the second lens group The two lens groups are adjusted between the mask module and the object. The laser cleaning device according to claim 1, wherein the wavelength of the first lens group of the lens group switching module is the same or matches the first wavelength of the first laser beam, and the lens group switching module The wavelength of the second lens group is the same or matches the second wavelength of the second laser beam. The laser cleaning device according to claim 1, wherein the first laser beam having the first wavelength and the second laser beam having the second wavelength are green light beams having a wavelength of 532nm (nanometers), respectively The radiation beam and the infrared laser beam with a wavelength of 1064nm, and the first lens group and the second lens group of the lens group switching module are respectively a lens group with a wavelength of 532nm and a lens group with a wavelength of 1064nm. The laser cleaning device according to claim 1, further comprising a light path transmission module, which is used to switch the wavelength switching module to the first laser beam having the first wavelength or the first laser beam having the second wavelength Two laser beams are conducted to the mask module, so that the first laser beam with the first wavelength or the second laser beam with the second wavelength sequentially passes through the mask module and switches to the lens group The module is projected onto the object. The laser cleaning device according to claim 1, further comprising a nozzle module, which is used to exclude the first laser beam with the first wavelength or the second laser beam with the second wavelength from cleaning the object Dust or debris generated at the time. The laser cleaning device according to claim 1, further comprising a control module, wherein the wavelength switching module switches the first laser beam having the first wavelength to the second laser beam having the second wavelength A switching signal is generated to excite the lens group switching module by the control module according to the switching signal generated by the wavelength switching module, so that the lens group switching module will be located between the mask module and the object The first mirror group in between is switched to the second mirror group. The laser cleaning device according to claim 1, further comprising a mobile module, wherein the mask module and the lens group switching module are located on the mobile module or connected to the mobile module so as to be moved by the mobile module. The module moves the mask module and the lens group switching module so that the first laser beam with the first wavelength or the second laser beam with the second wavelength passes through the mask module and the mirror The group switching module corresponds to the cleaning part of the object. A laser cleaning method includes: A laser beam is provided by the laser module; The wavelength switching module outputs a first laser beam having a first wavelength according to the laser beam from the laser module, so as to pass the first laser beam having the first wavelength through at least one of the mask modules The hole and the lens group switch the first lens group of the module to be projected onto the object to clean the object, wherein at least one through hole of the mask module is used to define the projection of the first laser beam with the first wavelength to the object The pattern on the object, and the first lens group of the lens group switching module matches the first laser beam having the first wavelength; and The wavelength switching module switches the first laser beam with the first wavelength to a second laser beam with a second wavelength different from the first wavelength, so as to change the second laser beam with the second wavelength The light beam passes through at least one through hole of the mask module and the second lens group of the lens group switching module to be projected onto the object to clean the object, wherein at least one through hole of the mask module is used to define the The second laser beam of the second wavelength is projected onto the pattern on the object, and the second lens group of the lens group switching module matches the second laser beam having the second wavelength. The laser cleaning method according to claim 13, further comprising converting the laser beam provided by the laser module into a first laser beam having the first wavelength by a frequency doubling crystal of the wavelength switching module . The laser cleaning method according to claim 13, further comprising switching the first lens group and the second lens group by the lens group switching module through translation or rotation, so that the first lens group or the second lens group The two lens groups are adjusted between the mask module and the object. The laser cleaning method according to claim 13, wherein the first laser beam with the first wavelength and the second laser beam with the second wavelength are respectively green lasers with a wavelength of 532nm (nanometers) The radiation beam and the infrared laser beam with a wavelength of 1064nm, and the first lens group and the second lens group of the lens group switching module are respectively a lens group with a wavelength of 532nm and a lens group with a wavelength of 1064nm. The laser cleaning method according to claim 13, further comprising a first laser beam having the first wavelength or a second laser having the second wavelength switched by the wavelength switching module by the light path conduction module The light beam is guided to the mask module so that the first laser beam with the first wavelength or the second laser beam with the second wavelength sequentially passes through the mask module and the lens group switching module. Projected onto the object. The laser cleaning method according to claim 13, further comprising removing the first laser beam with the first wavelength or the second laser beam with the second wavelength from the nozzle module when cleaning the object The dust or debris. The laser cleaning method according to claim 13, further comprising switching the first laser beam with the first wavelength to the second laser beam with the second wavelength by the wavelength switching module to generate a switching signal, The control module activates the lens group switching module according to the switching signal generated by the wavelength switching module, so that the lens group switching module will set the first mirror between the mask module and the object The group switches to the second mirror group. The laser cleaning method according to claim 13, wherein the mask module and the lens group switching module are located on a mobile module or connected to the mobile module, so that the mobile module moves the mask mold Group and the lens group switching module, so that the first laser beam with the first wavelength or the second laser beam with the second wavelength passes through the mask module and the lens group switching module to correspond to The clean part of the object.

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