TWI738401B - Method for processing carrier board into ultra-high vacuum heating chamber and ultra-low temperature magnetron ion reactive etching cavity - Google Patents
Method for processing carrier board into ultra-high vacuum heating chamber and ultra-low temperature magnetron ion reactive etching cavity Download PDFInfo
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Abstract
一種將載板送入超高真空加熱腔室以及超低溫磁控離子反應式蝕刻腔體中加工之方法,其步驟包含:a)提供超高真空加熱腔室;b)將第一載板送入數個支持區;c)使第一加熱燈具模組對第一載板加熱;d)將第二載板送入第二支持區,第二加熱燈具模組對第一載板加熱;e)從超高真空加熱腔室中取出第一載板;f)提供超低溫磁控離子反應式蝕刻腔體,將第一載板送進承載機構;g)降下支撐桿使壓環的指狀部抵靠第一載板;h)提供中空環形遮罩件於殼體中;i)將抽氣泵接合至抽氣通道;以及j)升起支撐桿,讓第一載板離開承載盤且從超低溫磁控離子反應式蝕刻腔體中取出。 A method for feeding a carrier board into an ultra-high vacuum heating chamber and an ultra-low temperature magnetron ion reactive etching cavity for processing. The steps include: a) providing an ultra-high vacuum heating chamber; b) feeding the first carrier board Several supporting areas; c) heating the first carrier board by the first heating lamp module; d) feeding the second carrier board into the second supporting area, and the second heating lamp module heating the first carrier board; e) Take out the first carrier board from the ultra-high vacuum heating chamber; f) Provide an ultra-low temperature magnetron ion reactive etching chamber, and send the first carrier board into the carrier mechanism; g) Lower the support rod to make the fingers of the pressure ring abut Rely on the first carrier plate; h) provide a hollow ring-shaped shield in the housing; i) connect the suction pump to the suction channel; Take it out of the ion-controlled reactive etching cavity.
Description
本發明涉及一種對載板加工之方法,尤指先將載板送出超高真空加熱腔室中加工之後再將載板送入超低溫磁控離子反應式蝕刻腔體中加工之方法。 The invention relates to a method for processing a carrier board, especially a method of sending the carrier board out of an ultra-high vacuum heating chamber for processing, and then sending the carrier board into an ultra-low temperature magnetron ion reactive etching cavity for processing.
在對載板(在本文中所稱之載板,係可指晶圓或同等形狀之玻璃載板、矽(silicon)載板、陶瓷(ceramic)載板等)進行物理氣相沉積製程之前,應先將其加熱至一設定溫度(例如為130℃),使得複合在載板表面中的揮發性氣體與濕氣自載板表面逸出。 Before carrying out the physical vapor deposition process on the carrier (the carrier referred to in this article can refer to a wafer or glass carrier of the same shape, silicon carrier, ceramic carrier, etc.), It should be heated to a set temperature (for example, 130° C.), so that the volatile gas and moisture compounded on the surface of the carrier board can escape from the surface of the carrier board.
習知技術中,除去氣體(包含揮發性氣體以及濕氣)的設備係採用類似爐管烤箱的設備去對所容納之多片載板進行整體加熱。此方式雖可對多片載板同時烘烤,但卻無法針對每一片載板的表面均勻地加熱並且控溫,導致影響了氣體與濕氣逸出的效率。因此,當要增加烘烤溫度或時間以確保氣體與濕氣都被移除時,亦因此降低除去揮發性氣體設備之效能,或是因烤箱局部(靠近加熱器)之高溫造成載板受損。另外,當前、後兩批載板之加熱溫度需要調整時,則需要等整體烤箱調升或降低至設定溫度,亦會降低除去揮發性氣體設備之處理效率。又,為達到在真空中順利 導熱,需要通入適量氬氣作導熱工作,也因此降低除揮發性氣體之效率與成本。 In the prior art, the equipment for removing gases (including volatile gases and moisture) uses a furnace-tube oven-like equipment to heat the multiple contained carrier plates as a whole. Although this method can bake multiple carrier boards at the same time, it cannot heat and control the temperature uniformly on the surface of each carrier board, which affects the efficiency of gas and moisture escape. Therefore, when it is necessary to increase the baking temperature or time to ensure that the gas and moisture are removed, the performance of the equipment for removing volatile gases is therefore reduced, or the carrier board is damaged due to the high temperature of the oven (near the heater) . In addition, when the heating temperature of the current and later two batches of carrier plates needs to be adjusted, it is necessary to wait for the overall oven to be raised or lowered to the set temperature, which will also reduce the processing efficiency of the volatile gas removal equipment. Also, in order to achieve smoothness in a vacuum Heat conduction requires a proper amount of argon gas for heat conduction work, thus reducing the efficiency and cost of removing volatile gases.
另外,在後段封裝製程中,會使用多層金屬佈線間的絕緣材料,隨著IC封裝尺寸減小及密度增大,絕緣材料的性能已經成為影響IC功能的因素之一。當處理高揮發性的絕緣材料時,常會伴隨著汙染微粒的產生並使得接觸介面阻抗Rc(Contact Resistance)增高。 In addition, in the subsequent packaging process, insulating materials between multilayer metal wiring are used. As the size of IC packaging decreases and the density increases, the performance of insulating materials has become one of the factors that affect IC functions. When processing highly volatile insulating materials, it is often accompanied by the generation of pollutant particles and increases the contact resistance Rc (Contact Resistance).
習知用於後段封裝製程的超低溫磁控離子反應式蝕刻腔體設備中,係採用電子吸盤(e-chuck)而將載板吸附在承載盤上,但是對於翹曲的載板而言,其無法被電子吸盤平整地吸附在承載盤,進而使得蝕刻清潔過程中因溫度不均產生的汙染微粒不易排除而附著在腔體中。 In the conventional ultra-low temperature magnetron ion reactive etching chamber equipment used in the back-end packaging process, an electronic chuck (e-chuck) is used to adsorb the carrier plate on the carrier plate, but for the warped carrier plate, its The electronic chuck cannot be smoothly absorbed on the carrier plate, so that the polluting particles generated by the uneven temperature during the etching and cleaning process are not easily removed and adhere to the cavity.
再者,一般在超低溫磁控離子反應式蝕刻腔體設備內移動載板時會運用汽缸的升降做為驅動載板的方式,然而,汽缸在升降作動過程中易生抖動且會因此歪斜,進而易導致載板破損,亦使得機件摩擦而另產生汙染微粒。 Furthermore, generally when the carrier board is moved in the ultra-low temperature magnetron ion reactive etching chamber equipment, the lifting of the cylinder is used as the driving method of the carrier board. However, the cylinder is prone to jitter and skew during the lifting operation process, and thus It is easy to cause damage to the carrier board, and also cause the friction of the machine parts to produce pollution particles.
此外,當可升降載板的載板承載機構裝設於超低溫磁控離子反應式蝕刻腔體設備中時,其會佔據超低溫磁控離子反應式腔體的中央,因此抽氣泵只能裝設於偏離中心的位置,使得抽氣泵在抽氣時的氣流流動不夠平均,並因此無法順利將蝕刻時產生的汙染微粒順利帶走,由此堆積更多汙染微粒在超低溫磁控離子反應式蝕刻腔體設備中。 In addition, when the carrier mechanism that can lift the carrier plate is installed in the ultra-low temperature magnetron ion reactive etching chamber equipment, it will occupy the center of the ultra-low temperature magnetron ion reactive cavity, so the suction pump can only be installed in The off-center position makes the air flow of the air pump when pumping air is not even enough, and therefore cannot smoothly remove the polluting particles generated during etching, thereby accumulating more polluting particles in the ultra-low temperature magnetron ion reactive etching chamber In the device.
前述數個缺點皆會讓汙染微粒附著在超低溫磁控離子反應式蝕刻腔體設備裡且不易去除,進而讓平均清潔時間MTBC(mean time between clean)減少而無法提高稼動率。 The foregoing several shortcomings all make pollutant particles adhere to the ultra-low temperature magnetron ion reactive etching chamber equipment and are difficult to remove, thereby reducing the mean time between clean (MTBC) and failing to increase the utilization rate.
本發明提供了一種將載板送入超高真空加熱腔室以及超低溫磁控離子反應式蝕刻腔體中加工之方法,其步驟包含: The present invention provides a method for processing a carrier board into an ultra-high vacuum heating chamber and an ultra-low temperature magnetron ion reactive etching cavity. The steps include:
a)提供一超高真空加熱腔室,其包含一具有數個支持區的平面轉盤以及數個加熱燈具模組;b)藉由一傳送裝置將一第一載板送入數個支持區中之一第一支持區,其中第一支持區位於一傳送位置;c)轉動平面轉盤使得第一支持區到達數個加熱燈具模組中之一第一加熱燈具模組之下,致使第一加熱燈具模組對第一載板進行加熱,又數個支持區中之一第二支持區亦被轉動至傳送位置;d)藉由傳送裝置將一第二載板送入第二支持區,轉動平面轉盤使第二支持區到達第一加熱燈具模組之下;同時第一支持區亦被轉動至數個加熱燈具模組中之一第二加熱燈具模組之下,致使第二加熱燈具模組對第一載板進行加熱;e)當平面轉盤將第一支持區轉動回到傳送位置時,傳送位置上方的數個加熱燈具模組中之一傳送位置加熱燈具模組對第一載板進行加熱,接著再藉由傳送裝置將第一載板從超高真空加熱腔室中取出;f)提供一超低溫磁控離子反應式蝕刻腔體,並藉由傳送裝置在高真空環境將第一載板送進超低溫磁控離子反應式蝕刻腔體的一殼體內的一承載機構上;g)降下承載機構的複數個支撐桿,使得第一載板放置在一承載盤上,同時一壓環的複數個指狀部亦抵靠第一載板,其中壓環包含一環狀部以及複數個指狀部係從環狀部之內側往中心凸伸;h)提供一中空環形遮罩件於殼體中,殼體包含:一中空環形遮罩件,其係置於殼體中,中空環形遮罩件包括一外壁以 及設於外壁上之一長形開口;及一抽氣通道,設置於殼體的一底部且鄰近長形開口;i)提供一接合至抽氣通道的抽氣泵,使得在超低溫磁控離子反應式蝕刻腔體內對第一載板蝕刻時所產生的污染微粒係通過長形開口進入抽氣通道而被抽氣泵帶走;以及j)升起承載機構的複數個支撐桿,使得第一載板離開承載盤,接著藉由傳送裝置將第一載板從超低溫磁控離子反應式蝕刻腔體中取出。 a) Provide an ultra-high vacuum heating chamber, which includes a flat turntable with several supporting areas and several heating lamp modules; b) A first carrier board is sent into the several supporting areas by a conveying device A first support area, wherein the first support area is located at a transfer position; c) Rotate the plane turntable so that the first support area reaches under one of the heating lamp modules, causing the first heating lamp module The lamp module heats the first carrier, and the second one of the several supporting areas is also rotated to the conveying position; d) A second carrier is sent to the second supporting area by the conveying device and rotated The plane turntable makes the second supporting area reach below the first heating lamp module; at the same time, the first supporting area is also rotated to one of the several heating lamp modules under the second heating lamp module, causing the second heating lamp module to Group to heat the first carrier; e) when the plane turntable rotates the first support area back to the conveying position, one of the several heating lamp modules above the conveying position is heated by the lamp module to the first carrier After heating, the first carrier board is taken out from the ultra-high vacuum heating chamber by the conveying device; f) an ultra-low temperature magnetron ion reactive etching chamber is provided, and the first carrier is removed by the conveying device in a high vacuum environment. The carrier board is fed into a bearing mechanism in a shell of the ultra-low temperature magnetron ion reactive etching chamber; g) lowering the plurality of support rods of the bearing mechanism, so that the first carrier board is placed on a bearing plate and a pressing ring The plurality of fingers also abut the first carrier plate, wherein the pressure ring includes a ring portion and the plurality of fingers protrude from the inner side of the ring portion to the center; h) a hollow ring-shaped shield member is provided on In the housing, the housing includes: a hollow ring-shaped shield member, which is placed in the housing, and the hollow ring-shaped shield member includes an outer wall with And an elongated opening on the outer wall; and an air extraction channel, which is arranged at a bottom of the housing and adjacent to the elongated opening; i) an air extraction pump connected to the air extraction channel is provided to make the magnetron ion reaction at ultra-low temperature The pollutant particles generated during the etching of the first carrier board in the etching chamber enter the air suction channel through the elongated opening and are taken away by the suction pump; After leaving the carrier plate, the first carrier plate is taken out from the ultra-low temperature magnetron ion reactive etching cavity by means of a conveying device.
依據本發明之另一實施例,其中步驟d)進一步包含將一第三支持區轉動至傳送位置,藉由傳送裝置將一第三載板送入第三支持區,轉動平面轉盤使第三支持區到達第一加熱燈具模組之下,又一第四支持區亦被轉動至傳送位置,藉由傳送裝置將一第四載板送入第四支持區,轉動平面轉盤使第四支持區到達第一加熱燈具模組之下。 According to another embodiment of the present invention, wherein step d) further includes rotating a third supporting area to the transfer position, and sending a third carrier plate into the third supporting area by the transfer device, and rotating the flat turntable to make the third support When the zone reaches below the first heating lamp module, another fourth support zone is also rotated to the conveying position. A fourth carrier board is sent to the fourth support zone by the conveying device, and the plane turntable is rotated to make the fourth support zone reach Below the first heating lamp module.
依據本發明之另一實施例,其中數個加熱燈具模組中之每一者係使用能發出不同波長範圍之光線的鹵素燈具,不同波長範圍之光線對第一載板及第二載板分別加熱。 According to another embodiment of the present invention, each of the plurality of heating lamp modules uses halogen lamps capable of emitting light of different wavelength ranges, and the light of different wavelength ranges respectively affect the first carrier board and the second carrier board. heating.
依據本發明之另一實施例,超高真空加熱腔室中還包含一遮光板,遮光板上設有數個透光孔。 According to another embodiment of the present invention, the ultra-high vacuum heating chamber further includes a light-shielding plate, and the light-shielding plate is provided with a plurality of light-transmitting holes.
依據本發明之另一實施例,數個透光孔的數量對應數個加熱燈具模組的數量。 According to another embodiment of the present invention, the number of the light-transmitting holes corresponds to the number of the heating lamp modules.
依據本發明之另一實施例,超高真空加熱腔室的一底部表面設有一第一穿孔,且一第一抽氣泵組接合至第一穿孔並與超高真空加熱腔室流體連通。 According to another embodiment of the present invention, a bottom surface of the ultra-high vacuum heating chamber is provided with a first through hole, and a first suction pump group is connected to the first through hole and is in fluid communication with the ultra-high vacuum heating chamber.
依據本發明之另一實施例,底部表面設有一第二穿孔,且一第二抽氣泵組接合至第二穿孔並與超高真空加熱腔室流體連通。 According to another embodiment of the present invention, a second perforation is provided on the bottom surface, and a second suction pump group is connected to the second perforation and is in fluid communication with the ultra-high vacuum heating chamber.
依據本發明之另一實施例,在步驟b)至步驟e)中,第一抽氣泵組保持運作,使得超高真空加熱腔室係維持真空。 According to another embodiment of the present invention, in step b) to step e), the first suction pump group keeps operating, so that the ultra-high vacuum heating chamber maintains a vacuum.
依據本發明之另一實施例,在步驟b)至步驟e)中,第一抽氣泵組以及第二抽氣泵組保持運作,使得超高真空加熱腔室係維持真空。 According to another embodiment of the present invention, in steps b) to e), the first air extraction pump set and the second air extraction pump set are kept operating, so that the ultra-high vacuum heating chamber maintains a vacuum.
依據本發明之另一實施例,第一抽氣泵組包含一低溫冷凝泵以及一真空渦輪泵,其中低溫冷凝泵係串聯真空渦輪泵且低溫冷凝泵接合至第一穿孔。 According to another embodiment of the present invention, the first suction pump group includes a cryogenic condensate pump and a vacuum turbo pump, wherein the cryogenic condensate pump is connected in series with the vacuum turbo pump and the cryogenic condensate pump is connected to the first through hole.
依據本發明之另一實施例,第二抽氣泵組包含一低溫冷凝泵以及一真空渦輪泵,其中低溫冷凝泵係串聯真空渦輪泵且低溫冷凝泵接合至第二穿孔。 According to another embodiment of the present invention, the second suction pump group includes a cryogenic condensate pump and a vacuum turbo pump, wherein the cryogenic condensate pump is connected in series with the vacuum turbo pump and the cryogenic condensate pump is connected to the second through hole.
依據本發明之另一實施例,第一抽氣泵組包含一真空渦輪泵,且真空渦輪泵接合第一穿孔;第二抽氣泵組包含一低溫冷凝泵,且低溫冷凝泵接合至第二穿孔。 According to another embodiment of the present invention, the first air extraction pump group includes a vacuum turbo pump, and the vacuum turbo pump is connected to the first perforation; the second air extraction pump group includes a cryogenic condensate pump, and the cryogenic condensate pump is connected to the second perforation.
依據本發明之另一實施例,超低溫磁控離子反應式蝕刻腔體還包含一上蓋,其包含一設有複數個通氣孔之氣體分布組盤,其中殼體樞接於上蓋,上蓋覆蓋於殼體上。 According to another embodiment of the present invention, the ultra-low temperature magnetron ion reactive etching chamber further includes an upper cover, which includes a gas distribution assembly plate provided with a plurality of vent holes, wherein the housing is pivotally connected to the upper cover, and the upper cover covers the housing Physically.
依據本發明之另一實施例,上蓋包含一磁控盤,其係裝設於氣體分布組盤之上,其中磁控盤上包含複數個磁鐵孔。 According to another embodiment of the present invention, the upper cover includes a magnetron disk, which is mounted on the gas distribution group disk, wherein the magnetron disk includes a plurality of magnet holes.
依據本發明之另一實施例,複數個磁鐵設於複數個磁鐵孔中。 According to another embodiment of the present invention, a plurality of magnets are arranged in the plurality of magnet holes.
依據本發明之另一實施例,中空環形遮罩件與殼體之間有一間隙。 According to another embodiment of the present invention, there is a gap between the hollow annular shield member and the housing.
依據本發明之另一實施例,複數個指狀部共有3至12個。 According to another embodiment of the present invention, there are 3 to 12 fingers in total.
依據本發明之另一實施例,複數個指狀部共有8個。 According to another embodiment of the present invention, there are 8 fingers in total.
依據本發明之另一實施例,壓環之材料是石英。 According to another embodiment of the present invention, the material of the pressure ring is quartz.
依據本發明之另一實施例,壓環之材料是陶瓷。 According to another embodiment of the present invention, the material of the pressure ring is ceramic.
依據本發明之另一實施例,承載機構包含:承載盤,其包含複數個支撐桿穿孔;一支架組,其包含:一底座盤;複數個支撐桿,設於底座盤上,複數個支撐桿分別穿過複數個支撐桿穿孔;複數個第一定位桿,設於底座盤的周邊;以及複數個第二定位桿,環繞並固設於承載盤周邊;複數個步進馬達,分別驅動複數個支撐桿及複數個第一定位桿相對承載盤升降;其中第一載板夾設於壓環以及承載盤之間,支撐桿被升起以抵靠第一載板,及第一定位桿被升起使壓環離開第一載板。 According to another embodiment of the present invention, the bearing mechanism includes: a bearing plate, which includes a plurality of support rod perforations; a bracket set, which includes: a base plate; a plurality of support rods arranged on the base plate, and a plurality of support rods Pass through a plurality of support rods respectively; a plurality of first positioning rods are arranged on the periphery of the base plate; and a plurality of second positioning rods are surrounded and fixed on the periphery of the carrier plate; a plurality of stepping motors respectively drive a plurality of The supporting rods and the plurality of first positioning rods are raised and lowered relative to the supporting plate; wherein the first supporting plate is sandwiched between the pressure ring and the supporting plate, the supporting rods are raised to abut against the first supporting plate, and the first positioning rods are raised Start the pressure ring away from the first carrier plate.
依據本發明之另一實施例,壓環的一底面周邊設有複數個定位孔,複數個定位孔的位置相對應於複數個第二定位桿。 According to another embodiment of the present invention, a plurality of positioning holes are provided around a bottom surface of the pressure ring, and the positions of the plurality of positioning holes correspond to the plurality of second positioning rods.
依據本發明之另一實施例,複數個步進馬達係分別透過複數個波紋管而連結至支架組。 According to another embodiment of the present invention, a plurality of stepping motors are respectively connected to the bracket group through a plurality of bellows.
依據本發明之另一實施例,承載盤包含一盤體、及複數個設於盤體之一表面上的氣體溝槽以及一穿透盤體並連通複數個氣體溝槽的進氣引道。 According to another embodiment of the present invention, the carrier plate includes a plate body, a plurality of gas grooves provided on a surface of the plate body, and an air inlet passage that penetrates the plate body and communicates with the plurality of gas grooves.
依據本發明之另一實施例,承載盤包含有一液體進口以及一液體出口,液體進口以及液體出口皆設於承載盤上相對於氣體溝槽之另一表面。 According to another embodiment of the present invention, the carrier plate includes a liquid inlet and a liquid outlet, and the liquid inlet and the liquid outlet are both provided on the other surface of the carrier plate opposite to the gas groove.
依據本發明之另一實施例,承載盤包含有一液體流道,液體流道與液體進口以及液體出口連接。 According to another embodiment of the present invention, the carrier plate includes a liquid flow channel, and the liquid flow channel is connected to the liquid inlet and the liquid outlet.
依據本發明之另一實施例,一冷卻液通過液體進口、液體出口以及液體流道。 According to another embodiment of the present invention, a cooling liquid passes through the liquid inlet, the liquid outlet, and the liquid flow channel.
依據本發明之另一實施例,中空環形遮罩件還包括一位於外壁上之底部周邊、由底部周邊往內延伸形成的一內底部周邊槽道、與內底部周邊槽道連通之複數個穿透孔以及設於外壁上之複數個外壁穿透孔。 According to another embodiment of the present invention, the hollow annular shield member further includes a bottom periphery on the outer wall, an inner bottom peripheral channel extending inward from the bottom periphery, and a plurality of through-holes communicating with the inner bottom peripheral channel. Through holes and a plurality of outer wall penetration holes arranged on the outer wall.
100:超高真空加熱腔室 100: Ultra-high vacuum heating chamber
101:平面轉盤 101: flat turntable
1011:支持區 1011: Support Zone
10111:第一支持區 10111: The first support area
10112:第二支持區 10112: Second Support Area
10113:第三支持區 10113: Third Support Zone
10114:第四支持區 10114: Fourth Support Zone
102:加熱燈具模組 102: Heating lamp module
1021:第一加熱燈具模組 1021: The first heating lamp module
1022:第二加熱燈具模組 1022: The second heating lamp module
1023:第三加熱燈具模組 1023: The third heating lamp module
103:第一穿孔 103: first perforation
104:遮光板 104: shading board
1041:透光孔 1041: light hole
105:第二穿孔 105: second perforation
120:第一抽氣泵組 120: The first suction pump group
1201:低溫冷凝泵 1201: Low temperature condensate pump
1202:真空渦輪泵 1202: Vacuum turbo pump
130:第二抽氣泵組 130: The second suction pump group
1301:低溫冷凝泵 1301: Low temperature condensate pump
1302:真空渦輪泵 1302: Vacuum turbo pump
190:傳送裝置 190: Conveyor
200:超低溫磁控離子反應式腔體 200: Ultra-low temperature magnetron ion reaction chamber
210:上蓋 210: upper cover
211:氣體分布組盤 211: Gas distribution panel
212:通氣孔 212: Vent
213:磁控盤 213: Magnetron Disk
2131:磁鐵孔 2131: Magnet hole
2132:磁鐵 2132: Magnet
214:噴灑器 214: Sprayer
220:殼體 220: shell
221:抽氣通道 221: Exhaust Channel
222:底部 222: bottom
230:中空環形遮罩件 230: Hollow ring mask
231:外壁 231: Outer Wall
232:周邊 232: Peripheral
233:內底部周邊槽道 233: Perimeter channel at the inner bottom
234:穿透孔 234: penetration hole
235:長形開口 235: Long opening
236:外壁穿透孔 236: Outer wall penetration hole
240:承載盤 240: Carrier plate
241:穿孔 241: Perforation
242:盤體 242: Disc body
243:表面 243: Surface
244:氣體溝槽 244: Gas Groove
245:進氣引道 245: Intake Approach
246:液體進口 246: Liquid inlet
247:液體出口 247: Liquid outlet
248:表面 248: Surface
249:液體流道 249: Liquid flow path
250:壓環 250: pressure ring
2501:環狀部 2501: Ring
2502:指狀部 2502: finger
2503:底面周邊 2503: Around the bottom
2504:定位孔 2504: positioning hole
260:抽氣泵 260: Air pump
270:承載機構 270: Carrier Mechanism
271:支架組 271: Bracket Group
2711:底座盤 2711: Base plate
2712:支撐桿 2712: support rod
2713:第一定位桿 2713: The first positioning rod
2714:第二定位桿 2714: second positioning rod
272:步進馬達 272: stepping motor
2721:波紋管 2721: Bellows
B:底部表面 B: bottom surface
O:閘口 O: Gate
P:傳送位置 P: Transmission location
PH:傳送位置加熱燈具模組 PH: heating lamp module in transmission position
S1、S2、S3、S4、S5、S6、S7、S8、S9、S10:步驟 S1, S2, S3, S4, S5, S6, S7, S8, S9, S10: steps
T:頂部表面 T: top surface
W:載板 W: carrier board
W1:第一載板 W1: The first carrier board
W2:第二載板 W2: second carrier board
W3:第三載板 W3: third carrier board
W4:第四載板 W4: Fourth Carrier Board
圖1為本發明所提供的方法之流程圖; Figure 1 is a flowchart of the method provided by the present invention;
圖2為本發明之方法所對應之超高真空加熱腔室的立體圖; Figure 2 is a perspective view of the ultra-high vacuum heating chamber corresponding to the method of the present invention;
圖3為本發明之方法所對應之超高真空加熱腔室的剖面圖; Figure 3 is a cross-sectional view of the ultra-high vacuum heating chamber corresponding to the method of the present invention;
圖4為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示用傳送裝置將載板送入超高真空加熱腔室加熱; 4 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the carrier board is sent into the ultra-high vacuum heating chamber for heating by a conveyor;
圖5為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示平面轉盤轉動,並使載板在不同的加熱燈具模組之下加熱; Figure 5 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the plane turntable rotates and the carrier plate is heated under different heating lamp modules;
圖6為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示平面轉盤轉動,並使載板在不同的加熱燈具模組之下加熱; 6 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the plane turntable rotates and the carrier plate is heated under different heating lamp modules;
圖7為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示平面轉盤轉動,並使載板在不同的加熱燈具模組之下加熱; Figure 7 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the plane turntable rotates and the carrier plate is heated under different heating lamp modules;
圖8為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示平面轉盤轉動,並使載板在不同的加熱燈具模組之下加熱; 8 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the plane turntable rotates and the carrier plate is heated under different heating lamp modules;
圖9為本發明之方法所對應之超高真空加熱腔室的俯視圖示意圖,其表示平面轉盤轉動,並使載板在不同的加熱燈具模組之下加熱; Figure 9 is a schematic top view of the ultra-high vacuum heating chamber corresponding to the method of the present invention, which shows that the plane turntable rotates and the carrier plate is heated under different heating lamp modules;
圖10為本發明之方法所對應之超高真空加熱腔室另一實施方式的剖面圖; 10 is a cross-sectional view of another embodiment of the ultra-high vacuum heating chamber corresponding to the method of the present invention;
圖11為本發明之方法所對應之超高真空加熱腔室另一實施方式的剖面圖; 11 is a cross-sectional view of another embodiment of the ultra-high vacuum heating chamber corresponding to the method of the present invention;
圖12為本發明之方法所提供的超低溫磁控離子反應式蝕刻腔體之立體圖; 12 is a perspective view of the ultra-low temperature magnetron ion reactive etching cavity provided by the method of the present invention;
圖13為本發明之方法所提供的超低溫磁控離子反應式蝕刻腔體之局部橫剖面圖; 13 is a partial cross-sectional view of the ultra-low temperature magnetron ion reactive etching cavity provided by the method of the present invention;
圖14為本發明之方法所提供的上蓋的氣體分布組盤的立體圖(反面); Fig. 14 is a perspective view (reverse side) of the gas distribution plate of the upper cover provided by the method of the present invention;
圖15為本發明之方法所提供的上蓋的氣體分布組盤的立體圖(正面); Figure 15 is a perspective view (front side) of the gas distribution plate of the upper cover provided by the method of the present invention;
圖16為本發明之方法所提供的中空環形遮罩件的立體圖; Figure 16 is a perspective view of a hollow annular shield provided by the method of the present invention;
圖17為本發明之方法所提供的壓環的立體圖(正面); Figure 17 is a perspective view (front side) of the pressure ring provided by the method of the present invention;
圖18為本發明之方法所提供的壓環的立體圖(反面); Figure 18 is a perspective view (reverse side) of the pressure ring provided by the method of the present invention;
圖19為本發明之方法所提供的承載機構的立體示意圖; Figure 19 is a three-dimensional schematic diagram of the carrying mechanism provided by the method of the present invention;
圖20為本發明之方法所提供的承載機構的局部橫剖面圖; Figure 20 is a partial cross-sectional view of the carrying mechanism provided by the method of the present invention;
圖21為本發明之方法所提供的承載機構的局部橫剖面圖; Figure 21 is a partial cross-sectional view of the carrying mechanism provided by the method of the present invention;
圖22為本發明之方法所提供的承載盤的立體圖(正面); Figure 22 is a three-dimensional view (front) of the carrier plate provided by the method of the present invention;
圖23為本發明之方法所提供的承載盤的立體圖(反面)。 Fig. 23 is a perspective view (reverse side) of the carrier plate provided by the method of the present invention.
本發明的將載板送入超高真空加熱腔室以及超低溫磁控離子反應式蝕刻腔體中加工之方法係先運用在一種用於多片式載板的除去逸散及揮發出氣體的設備之除氣裝置及該設備,而後再運用在一種超低溫磁控離子反應式蝕刻腔體。如圖1的流程圖所示,本發明的步驟包含:a)提供一超高真空加熱腔室,其包含一具有數個支持區的平面轉盤以及數個加熱燈具模組S1;b)藉由一傳送裝置將一第一載板送入數個支持區中之一第一支持區,其中第一支持區位於一傳送位置S2;c)轉動平面轉盤使得第一支持區到達數個加熱燈具模組中之一第一加熱燈具模組之下,致使第一加熱燈具模組對第一載板進行加熱,又數個支持區中之一第二支持區亦被轉動至傳送位置S3;d)藉由傳送裝置將一第二載板送入第二支持區,轉動平面轉盤使第二支持區到達第一加熱燈具模組之下;同時第一支持區亦被轉動至數個加熱燈具模組中之一第二加熱燈具模組之下,致使第二加熱燈具模組對第一載板進行加熱S4;e)當平面轉盤將第一支持區轉動回到傳送位置時,傳送位置上方的數個加熱燈具模組中之一傳送位置加熱燈具模組對第一載板進行加熱,接著再藉由傳送裝置將第一載板從超高真空加熱腔室中取出S5;f)提供一超低溫磁控離子反應式蝕刻腔體,並藉由傳送裝置在高真空環境將第一載板送進超低溫磁控離子反應式蝕刻腔體的一殼體內的一承載機構上S6;g)降下承載機構的複數個支撐桿,使得第一載板放置在一承載盤上,同時一壓環的複數個指狀部亦抵靠第一載板,其中壓環包含一環狀部以及複數個指狀部係從環狀部之內側往中心凸伸S7;h)提供一中空環形遮罩件於殼體中,殼體包含:一中空環形遮罩件,其係置於殼 體中,中空環形遮罩件包括一外壁以及設於外壁上之一長形開口;及一抽氣通道,設置於殼體的一底部且鄰近長形開口S8;i)提供一接合至抽氣通道的抽氣泵,使得在超低溫磁控離子反應式蝕刻腔體內對第一載板蝕刻時所產生的污染微粒係通過長形開口進入抽氣通道而被抽氣泵帶走S9;以及j)升起承載機構的複數個支撐桿,使得第一載板離開承載盤,接著藉由傳送裝置將第一載板從超低溫磁控離子反應式蝕刻腔體中取出S10。 The method for feeding the carrier board into the ultra-high vacuum heating chamber and the ultra-low temperature magnetron ion reactive etching cavity of the present invention is first applied to a device for removing fugitive and volatilized gases for a multi-piece carrier board The degassing device and the equipment are then used in an ultra-low temperature magnetron ion reactive etching chamber. As shown in the flowchart of Figure 1, the steps of the present invention include: a) providing an ultra-high vacuum heating chamber, which includes a planar turntable with a plurality of supporting areas and a plurality of heating lamp modules S1; b) by A conveying device sends a first carrier board into a first support area of a plurality of support areas, wherein the first support area is located at a conveying position S2; c) rotate the plane turntable so that the first support area reaches the plurality of heating lamp molds One of the first heating lamp modules in the group is under the first heating lamp module, causing the first heating lamp module to heat the first carrier, and the second one of the several supporting areas is also rotated to the transfer position S3; d) A second carrier board is sent to the second supporting area by the conveying device, and the plane turntable is rotated to make the second supporting area reach under the first heating lamp module; at the same time, the first supporting area is also rotated to several heating lamp modules Under one of the second heating lamp modules, causing the second heating lamp module to heat the first carrier S4; e) When the plane turntable rotates the first support area back to the transfer position, the number above the transfer position One of the heating lamp modules is transferred at one of the heating lamp modules to heat the first carrier board, and then the first carrier board is taken out from the ultra-high vacuum heating chamber by the conveying device S5; f) providing an ultra-low temperature magnetic Control the ion reactive etching chamber, and send the first carrier board to a bearing mechanism in a shell of the ultra-low temperature magnetron ion reactive etching chamber in a high vacuum environment by a conveyor S6; g) Lower the bearing mechanism A plurality of supporting rods make the first carrier board to be placed on a carrier plate, and at the same time, the plurality of fingers of a pressure ring also abut the first carrier board, wherein the pressure ring includes a ring portion and a plurality of finger portions. S7 protrudes from the inner side of the ring to the center; h) Provide a hollow ring-shaped shield member in the housing, the housing includes: a hollow ring-shaped shield member, which is placed in the housing In the body, the hollow annular shielding member includes an outer wall and an elongated opening provided on the outer wall; and a suction channel, arranged on a bottom of the housing and adjacent to the elongated opening S8; i) providing a connection to the suction The air pump of the channel makes the pollutant particles generated during the etching of the first carrier board in the ultra-low temperature magnetron ion reactive etching chamber enter the air extraction channel through the elongated opening and are taken away by the air pump S9; and j) rise The plurality of supporting rods of the supporting mechanism make the first carrier plate leave the carrier plate, and then the first carrier plate is taken out from the ultra-low temperature magnetron ion reactive etching chamber by the conveying device S10.
接著要先說明的是前述步驟a)至步驟e)中,將載板送入超高真空加熱腔室加工的實施範例,如圖2所示,提供一超高真空加熱腔室100,並在其之下設一第一抽氣泵組120,第一抽氣泵組120與超高真空加熱腔室100流體連通,其中第一抽氣泵組120包含一低溫冷凝泵1201以及一真空渦輪泵1202,低溫冷凝泵1201係串聯真空渦輪泵1202,且真空渦輪泵1202在低溫冷凝泵1201之下,可將第一抽氣泵組120視為係一種直下式的設置。
Next, we will first explain an example of processing the carrier board into the ultra-high vacuum heating chamber in the foregoing steps a) to e). As shown in FIG. 2, an ultra-high
請繼續參閱圖3,係超高真空加熱腔室100之一實施例的剖面圖,超高真空加熱腔室100包含:一包含有數個支持區1011的平面轉盤101;數個加熱燈具模組102,設置在超高真空加熱腔室100的一頂部表面T;一第一穿孔103,設置在超高真空加熱腔室100的一底部表面B;以及一第一抽氣泵組120,接合至第一穿孔103並與超高真空加熱腔室100流體連通;其中,第一抽氣泵組120係垂直地設於超高真空加熱腔室100的下方。另外,每一加熱燈具模組102包含一加熱燈具。
Please continue to refer to FIG. 3, which is a cross-sectional view of an embodiment of the ultra-high
請繼續一併參閱圖4,本發明提供傳送載板至超高真空加熱腔室100加工之方法,其步驟包含:提供一超高真空加熱腔室100,其包含
一具有數個支持區1011的平面轉盤101以及數個加熱燈具模組102;藉由一傳送裝置190(傳送裝置190在本案的圖式中係以機械手臂表示,但不以此為限)將一第一載板W1送入一第一支持區10111,其中第一支持區10111位於一傳送位置P(在本發明中,支持區在傳送位置P才能讓傳送裝置190傳送載板至支持區);請參閱圖5,轉動平面轉盤101使得第一支持區10111到達一第一加熱燈具模組1021之下,致使第一加熱燈具模組1021對第一載板W1進行加熱,又一第二支持區10112亦被轉動至傳送位置P;藉由傳送裝置190將一第二載板W2送入第二支持區10112,轉動平面轉盤101使第二支持區10112到達第一加熱燈具模組1021之下(請參閱圖6);同時第一支持區10111亦被轉動至一第二加熱燈具模組1022之下,致使第二加熱燈具模組1022對第一載板W1進行加熱;請參閱圖7,當平面轉盤101將第一支持區10111轉動回到傳送位置P時,傳送位置P上方的一傳送位置加熱燈具模組PH對第一載板W1進行加熱,接著再藉由傳送裝置190將第一載板W1從超高真空加熱腔室100中取出(本發明圖式中未繪示取出第一載板W1的示意圖);以及藉由傳送裝置190將另一待處理載板送入第一支持區10111(僅以文字說明,未以圖式示出)。
Please continue to refer to FIG. 4 together. The present invention provides a method for transferring a carrier plate to an ultra-high
本發明的超高真空加熱腔室100中的平面轉盤101所能放置的載板數量較佳為4至6個,後述係對於能放置4個載板的超高真空加熱腔室100之傳送載板之步驟,熟悉本項技術之人士應能理解相同或類似之步驟亦可應於具有超過4個載板的平面轉盤之超高真空加熱腔室,本案並不受此實施例之例示所限制。請繼續參閱圖4,本發明的提供傳送載板至超高真空加熱腔室100加工之方法係以下述方式進行:提供如前述的超高真
空加熱腔室100;藉由一傳送裝置190透過一閘口O(閘口O之開啟、關閉及密封可採習知技術之機構,故不加以贅述)將一第一載板W1送入數個支持區1011中的一第一支持區10111(應說明的是,超高真空加熱腔室100中的數個支持區1011的數量較佳為4個至6個,為精簡說明內容,本發明以4個支持區1011為示意,但並不以此為限),其中第一支持區10111位於一傳送位置P;請參閱圖5,轉動平面轉盤101使得第一支持區10111到達數個加熱燈具模組102的一第一加熱燈具模組1021之下,應說明的是,超高真空加熱腔室100中的數個加熱燈具模組102的數量係相對應於支持區1011的數量,故如前所述,本發明以4個加熱燈具模組102為示意,但不以此為限,第一加熱燈具模組1021進而對第一載板W1進行加熱(在本發明中所述的對載板加熱係指將加熱燈具模組對著載板,使得載板的溫度上升至130度C),又一第二支持區10112亦被轉動至傳送位置P;藉由傳送裝置190將一第二載板W2送入第二支持區10112(圖未再示出傳送後續載板的示意圖),請參閱圖6,轉動平面轉盤101使第二支持區10112到達第一加熱燈具模組1021之下;同時第一支持區10111亦被轉動至一第二加熱燈具模組1022之下,致使第二加熱燈具模組1022對第一載板W1進行加熱,又一第三支持區10113亦被轉動至傳送位置P;藉由傳送裝置190將一第三載板W3送入第三支持區10113,轉動平面轉盤101使第三支持區10113到達第一加熱燈具模組1021之下,又一第四支持區10114亦被轉動至傳送位置P(如圖8所示),此時,第一載板W1係位在一第三加熱燈具模組1023之下;請參閱圖8,藉由傳送裝置190將一第四載板W4送入第四支持區10114,再轉動平面轉盤101使第四支持區10114到達第一加熱燈具模組1021之下;請參閱圖
9,當平面轉盤101將第一支持區10111轉動回到傳送位置P時,傳送位置P上方的一傳送位置加熱燈具模組PH對第一載板W1進行加熱,接著再藉由傳送裝置190將第一載板W1從超高真空加熱腔室100中取出;以及藉由傳送裝置190將一待處理載板送入第一支持區10111。
The number of carrier plates that can be placed on the
可說明的是,本發明使用平面轉盤101上的數個支持區1011去放置載板,此即表示前述的第一載板W1、第二載板W2、第三載板W3以及第四載板W4係被傳送裝置190水平地放置在第一支持區10111、第二支持區10112、第三支持區10113以及第四支持區10114中。
It can be explained that the present invention uses
進一步說明的是,數個加熱燈具模組102中之每一者係使用能發出不同波長範圍之光線的鹵素燈具,不同波長範圍之光線對第一載板W1、第二載板W2、第三載板W3、第四載板W4分別加熱。例如,第一加熱燈具模組1021放出近紅外線;第二加熱燈具模組1022放出遠紅外線,但不以此為限。
It is further explained that each of the several
請再參閱圖3,超高真空加熱腔室100中還包含一遮光板104,遮光板104上設有數個透光孔1041,透光孔1041的數量對應數個加熱燈具模組102的數量。加熱燈具模組102中之每一者通過遮光板104的透光孔1041而可直接對著位於加熱燈具模組102之下的載板加熱。即在本發明中,每個載板都是獨立地加熱。
Please refer to FIG. 3 again. The ultra-high
請再參閱圖10,圖示另一實施例,超高真空加熱腔室100的底部表面B設有一第二穿孔105,且一第二抽氣泵組130接合至第二穿孔105並與超高真空加熱腔室100流體連通。其中第二抽氣泵組130包含一低
溫冷凝泵1301以及一真空渦輪泵1302,其中低溫冷凝泵1301係串聯真空渦輪泵1302且低溫冷凝泵1301接合至該第二穿孔105。
Please refer to FIG. 10 again, which shows another embodiment. The bottom surface B of the ultra-high
另外,圖11中圖示再一實施例,超高真空加熱腔室100的底部表面B設有第一穿孔103以及第二穿孔105,第一抽氣泵組120接合第一穿孔103、第二抽氣泵組130接合第二穿孔105。其中第一抽氣泵組120包含真空渦輪泵1202,且真空渦輪泵1202接合該第一穿孔103;第二抽氣泵組130包含低溫冷凝泵1303,且低溫冷凝泵1303接合至該第二穿孔105。在此實施方式中,真空渦輪泵1202以及低溫冷凝泵1303是並聯運作。
In addition, another embodiment is shown in FIG. 11, the bottom surface B of the ultra-high
此外,上述方法係在一真空環境執行所有的步驟,即係使超高真空加熱腔室100保持真空,例如藉由第一抽氣泵組120及/或第二抽氣泵組130保持運作。
In addition, the above method is to perform all steps in a vacuum environment, that is, to maintain the vacuum of the ultra-high
平面轉盤101連接有相關的驅動裝置,但其裝置及結構非為本發明之重要技術特徵,故不在本文中贅述。
The
再者,每個支持區的下方還設有溫測儀去偵測載板的溫度,但溫測儀的相關裝置非為本發明之重要技術特徵,亦不在本文中贅述。 Furthermore, there is a temperature measuring instrument under each support area to detect the temperature of the carrier board, but the related device of the temperature measuring instrument is not an important technical feature of the present invention, and will not be repeated in this article.
後續將再說明的是將載板送入超低溫磁控離子反應式蝕刻腔體中加工之方法,即前述步驟f)至步驟j)的過程。 What will be explained later is the method of feeding the carrier board into the ultra-low temperature magnetron ion reactive etching chamber, that is, the process from step f) to step j).
為在後段封裝製程中全面地降低汙染微粒附著在超低溫磁控離子反應式蝕刻腔體之情形,請參閱圖12,本發明提供了一種超低溫磁控離子反應式蝕刻腔體200,其係用於對所放入其中的載板進行蝕刻加工處理。然而,本發明的重點非針對於如何對載板進行蝕刻,而是要讓蝕刻
過程中所產生的污染微粒盡量不附著於超低溫磁控離子反應式腔體200內部,因此本文並不強調蝕刻的相關技術特徵,發明人謹先聲明。
In order to fully reduce the adhesion of pollutant particles to the ultra-low temperature magnetron ion reactive etching cavity in the subsequent packaging process, please refer to FIG. 12, the present invention provides an ultra-low temperature magnetron ion
請一併參閱圖13至圖17,繼續說明的是,本發明的超低溫磁控離子反應式腔體200包含:一上蓋210、一殼體220、一中空環形遮罩件230、一承載盤240、一壓環250以及一抽氣泵260,上蓋210包含一氣體分布組盤211,其設有複數個通氣孔212。上蓋210係樞接於殼體220,並覆蓋於殼體220上。殼體220包含:一中空環形遮罩件230、一外壁231、一底部周邊232、一內底部周邊槽道233、複數個穿透孔234、一長形開口235、複數個外壁穿透孔236以及一抽氣通道221。中空環形遮罩件230係置於殼體220中,且包括外壁231、位於外壁231上並遠離上蓋210之底部周邊232、由底部周邊232往內延伸形成內底部周邊槽道233、與內底部周邊槽道233連通之複數個穿透孔234、設於外壁231上之長形開口235以及設於外壁231上之複數個外壁穿透孔236。抽氣通道221係設置於殼體220的底部222且鄰近長形開口235。承載盤240設於中空環形遮罩件230之中。壓環250係放置於承載盤240上,壓環250包含一環狀部2501以及從環狀部2501之內側往中心凸伸之複數個指狀部2502。抽氣泵260係接合至抽氣通道221。
Please refer to FIGS. 13-17 together. It is continued that the ultra-low temperature magnetron
上蓋210包含一磁控盤213,其係裝設於氣體分布組盤211之上,其中磁控盤213上包含複數個磁鐵孔2131,又複數個磁鐵2132設於複數個磁鐵孔2131中。
The
中空環形遮罩件230與殼體220之間有一間隙G。
There is a gap G between the hollow
壓環250上的複數個指狀部2502共有3至12個,較佳為圖17所示之8個指狀部2502。壓環250之材料可以是石英或陶瓷。此種材料特性可讓汙染微粒不易附著於壓環250上。
There are a total of 3 to 12
請繼續參閱圖19至圖21,本發明還提供一種用於固定載板W的承載機構270。在此另外說明的是,運送至超低溫磁控離子反應式蝕刻腔體200的載板W係為已在前述超高真空加熱腔室100中加工過後的第一載板W1、第二載板W2、第三載板W3、第四載板W4等的載板,為利於了解技術內容且不造成混淆,本文中,在超低溫磁控離子反應式蝕刻腔體200中加工的載板係僅用元件符號「W」表示。雖在申請專利範圍中係用「第一載板」一詞,但本發明技術領域中具有通常知識者應可推知,在「第一載板」之後,「第二載板」、「第三載板」等載板也都會陸續送進超低溫磁控離子反應式蝕刻腔體200內加工,因此在後續說明中仍用「載板W」一詞表示。承載機構270包含:包含複數個穿孔241的承載盤240、壓環250、一支架組271及複數個步進馬達272(同時參閱圖19至圖21)。支架組271包含一底座盤2711、設於底座盤2711上的複數個支撐桿2712、設於底座盤2711的周邊的複數個第一定位桿2713以及複數個第二定位桿2714。複數個支撐桿2712分別穿過複數個穿孔241。複數個第二定位桿2714係環繞並固設於承載盤240周邊。複數個步進馬達272能分別驅動複數個支撐桿2712及複數個第一定位桿2713相對承載盤240升降,其中載板W夾設於壓環250以及承載盤240之間,支撐桿2712被升起以抵靠載板W,及第一定位桿2713被升起使壓環250離開載板W。
Please continue to refer to FIGS. 19-21, the present invention also provides a supporting
一併參閱圖18,壓環250的一底面周邊2503設有複數個定位孔2504,該複數個定位孔2504的位置相對應於複數個第二定位桿2714。
Also referring to FIG. 18, a
複數個步進馬達272係分別透過複數個波紋管2721而連結至支架組271(在圖19中應有2個波紋管2721,惟其中一個被承載盤240擋住)。
The plurality of stepping
如圖22以及圖23所示,承載盤240包含一盤體242、及複數個設於盤體242之一表面243上的氣體溝槽244以及一穿透盤體242並連通複數個氣體溝槽244的進氣引道245。
As shown in FIGS. 22 and 23, the
承載盤240包含有一液體進口246以及一液體出口247,液體進口246以及液體出口247皆設於承載盤240上相對於氣體溝槽244之另一表面248。
The
承載盤240包含有一液體流道249,液體流道249與液體進口246以及液體出口247連接。
The
一冷卻液(圖未示出)通過液體進口246、液體出口247以及液體流道249。
A cooling liquid (not shown in the figure) passes through the
發明人如后將繼續說明本發明的超低溫磁控離子反應式蝕刻腔體200之整體運作。請參閱圖13、圖20、圖21,為進行蝕刻製程,透過機械手臂(圖未示)將載板W由輸入口I送入至超低溫磁控離子反應式蝕刻腔體200內,且平放於支撐桿2712上,至於運送載板W的過程則非為本發明之主要技術特徵,故不在本文中贅述。接著,步進馬達272經由軟體精密地控制而同步地下降,使得支架組271同時下降,讓原先被支架組271的複數個第一定位桿2713承載的壓環250亦一併跟著下降,同時,支撐桿
2712也帶著載板W一起下降,直至壓環250背面的複數個定位孔2504卡合至承載盤240的複數個第二定位桿2714以及載板W平放在承載盤240上時,步進馬達272不再驅動支架組271下降。此時,壓環250上的複數個指狀部2502係抵靠或輕壓在載板W上,讓載板W平整地置於承載盤240上。
The inventor will continue to describe the overall operation of the ultra-low temperature magnetron ion
一供氣系統以及一冷卻液系統係持續地供應冷卻用的氣體以及冷卻液至承載盤240,應注意的是,供氣系統以及冷卻液系統皆非為本發明的主要技術特徵,故不在本文中贅述,但仍可藉由圖22以及圖23之示意而能了解,供氣系統持續供應如氬氣或氦氣的冷卻用氣體,並透過進氣引道245將冷卻用氣體吹至承載盤240。冷卻用氣體經由進氣引道245而從承載盤240的氣體溝槽244朝向放置於承載盤240上的載板W輸入,藉此冷卻載板W。另外,冷卻液系統亦供應例如冷媒等冷卻液而使冷卻液由液體進口246進入承載盤240內的液體流道249,並接著從液體出口247離開承載盤240,以此不斷循環而進行熱交換。而整個超低溫磁控離子反應式蝕刻腔體200內的溫度則是在-20℃以下。
A gas supply system and a cooling liquid system continuously supply cooling gas and cooling liquid to the
再者,如圖13至圖16所示,在超低溫磁控離子反應式蝕刻腔體200內對載板W進行蝕刻時,位於上蓋210中的氣體分布盤組211上的噴灑器214會釋放出反應氣體,此反應氣體透過氣體分布盤組211中的通氣孔212而進入殼體220內,且藉由磁控盤213上所排列的複數個磁鐵2132去限制電漿。本段落前述之技術內容為本技術領域之人士所熟知,且非為本發明之重點技術內容,故不在此贅述。請繼續參閱前述圖式,由於承載機構270已經裝設於殼體220的中間,因此使得做為排氣用的抽氣泵260僅能裝設於偏離中間的位置,而本發明所提供的中空環形遮罩件230能讓被抽
氣泵260帶走的氣流能平均且順暢地由抽氣通道221排出,如后將描述此技術內容。首先,反應氣體被吹進殼體220內後,會從抽氣通道221排出,但由於中空環形遮罩件230的設置,使得殼體220中的反應氣體會經由複數個穿透孔234匯聚而順著內底部周邊槽道233往長形開口235流動,在間隙G中的反應氣體則由複數個外壁穿透孔236匯聚而順著內底部周邊槽道233往長形開口235而流動,接著再從位於長形開口235旁的抽氣通道221被抽氣泵260吸走而排出殼體220。如此的反應氣流之流動性順暢,能較習知技術更順利地帶走蝕刻過程中產生的汙染微粒,降低汙染微粒附著於殼體220內的程度。
Furthermore, as shown in FIGS. 13-16, when the carrier W is etched in the ultra-low temperature magnetron ion
當對載板W加工完畢後,則由軟體控制步進馬達272運作,使其推動支架組271,讓複數個支撐桿2712往上移動並將載板W抬起,且讓複數個第一定位桿2713往上移動並將壓環250抬起,直至載板W到達輸入口I的高度,再藉由機械手臂將載板W從殼體220取出。
After the carrier board W is processed, the software controls the stepping
發明人進一步說明,步進馬達272的運作穩定,讓整個支架組271的升降移動順利,防止壓環250和載板W接觸時產生歪斜而導致載板W破損以產生污染微粒。
The inventor further explained that the operation of the stepping
本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。 The technical content and technical features of the present invention have been disclosed above, but those familiar with the technology may still make various substitutions and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not deviate from the present invention, and are covered by the following patent applications.
S1、S2、S3、S4、S5、S6、S7、S8、S9、S10:步驟 S1, S2, S3, S4, S5, S6, S7, S8, S9, S10: steps
Claims (28)
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5248636A (en) * | 1987-07-16 | 1993-09-28 | Texas Instruments Incorporated | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
TW495827B (en) * | 1996-08-26 | 2002-07-21 | Velocidata Inc | A cylindrical carriage sputtering system |
WO2011112812A2 (en) * | 2010-03-10 | 2011-09-15 | Applied Materials, Inc. | Apparatus and methods for cyclical oxidation and etching |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5248636A (en) * | 1987-07-16 | 1993-09-28 | Texas Instruments Incorporated | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
TW495827B (en) * | 1996-08-26 | 2002-07-21 | Velocidata Inc | A cylindrical carriage sputtering system |
WO2011112812A2 (en) * | 2010-03-10 | 2011-09-15 | Applied Materials, Inc. | Apparatus and methods for cyclical oxidation and etching |
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