TWI735847B - Package of photoelectric device - Google Patents

Abstract

A package of photoelectric device including a substrate, at least one photoelectric device, a first barrier layer, a wavelength-converting layer and a second barrier layer is provided. The photoelectric device is disposed on the substrate. The first barrier layer is disposed on the substrate and covers the photoelectric device. The wavelength-converting layer is disposed on the first barrier layer. The second barrier layer covers the wavelength conversion layer. A composition of the first barrier layer includes a nitrogen content of more than 0 atomic percent (at%) to 10 at%, an oxygen content of 50at% to 70at%, and a silicon content of 30at% to 50at%.

Description

Optoelectronic component package

The invention relates to an optoelectronic device package.

In recent years, research on wavelength conversion materials (such as quantum dots, etc.) and optoelectronic devices (such as light-emitting devices, etc.) has gradually attracted attention. The wavelength conversion material has the characteristics of concentrated luminescence spectrum, wide color gamut and good color saturation. With the combination of wavelength conversion material and optoelectronic components, there is a chance to achieve a better full-color display effect. However, the wavelength conversion material is easily damaged by the influence of heat and/or water and oxygen. How to improve the barrier properties of the wavelength conversion material on the optoelectronic element to heat and/or water and oxygen through the packaging technology, thereby improving the reliability of the optoelectronic element package Its longevity is really the key.

An embodiment of the present invention provides an optoelectronic device package, which can have good barrier properties.

An optoelectronic device package according to an embodiment of the present invention includes a substrate, at least one optoelectronic device, a first barrier layer, a wavelength conversion layer, and a second barrier layer. The photoelectric element is arranged on the substrate. The first barrier layer is disposed on the substrate and covers the photoelectric element. The wavelength conversion layer is configured on the first barrier layer. The second barrier layer covers the wavelength conversion layer. The composition of the first barrier layer includes nitrogen (N) element content greater than 0 atomic percent (at%) to 10 at%, oxygen (O) element content ranging from 50 at% to 70 at%, and silicon (Si) element content Between 30at% and 50at%.

In the optoelectronic device package according to an embodiment of the present invention, the surfaces of the first barrier layer and the second barrier layer are modified respectively, so that the first barrier layer can provide thermal resistance and simultaneously block water and oxygen. The barrier effect of the wavelength conversion layer and the second barrier layer covering the wavelength conversion layer have good barrier characteristics, which is beneficial to protect the wavelength conversion layer, thereby reducing the wavelength conversion layer from being damaged by heat and/or water and oxygen. Luminous efficiency.

In order to make the present invention more comprehensible, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows.

1A to 1G are partial cross-sectional schematic diagrams of the optoelectronic device packaging process according to the first embodiment of the present invention. Please refer to FIG. 1A. First, a substrate 110 is provided. The substrate 110 may be a rigid substrate or a flexible substrate with visible light penetration. For example, the aforementioned hard substrate material is glass, wafer or other hard materials, and the aforementioned flexible substrate material is polyethylene terephthalate (PET), polyimide, for example. (polyimide, PI), polycarbonate (PC), polyamide (PA), polyethylene naphthalate (PEN), polyethylenimine (PEI), polyurethane (polyurethane, PU), polydimethylsiloxane (PDMS), acrylic polymer, such as polymethylmethacrylate (PMMA), etc., ether polymer For example, it is polyethersulfone (PES) or polyetheretherketone (PEEK), polyolefin, thin glass or other flexible materials, but the present invention is not limited to this.

Next, at least one optoelectronic element 120 is formed. The optoelectronic element 120 is disposed on the substrate 110. The optoelectronic element 120 may include a light-emitting element. The light-emitting element may be, for example, an organic light-emitting element, an inorganic light-emitting element, a quantum dot light-emitting display element, etc. Not limited to this. The following embodiments take the inorganic light-emitting device as an example.

After the optoelectronic device 120 is formed, the first barrier layer 130 may be formed on the substrate 110 and the optoelectronic device 120 by a solution process, and then the first barrier layer 130 is cured. The first barrier layer 130 may cover the top surface and sidewalls of the optoelectronic element 120. The material of the first barrier layer 130 used in the solution process may include, for example, polysilazane, polysiloxazane, or other suitable materials.

Please refer to FIG. 1B. In this embodiment, the cured first barrier layer 130 can be hydrolyzed in the atmosphere. The degree of hydrolysis can be determined according to requirements, and treatment methods such as illumination, heating or plasma can be used. The surface of the partially hydrolyzed first barrier layer 130 is modified to improve its barrier properties. The irradiation treatment can be, for example, vacuum ultraviolet light (VUV); the heating treatment can be, for example, heating using a hot plate, oven, etc., and the gas used can include air, nitrogen (N ₂ ), oxygen (O ₂ ), etc.; plasma treatment can include the use of passivation gas, hydrogen (H ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ), fluorine-containing gas, chlorine (Cl ₂ ), etc. for plasma modification quality. The material of the first barrier layer 130 subjected to the surface modification treatment may, for example, include silicon nitride, silicon oxynitride or other suitable materials.

In one embodiment, before forming the first barrier layer 130, a cover layer (not shown) may be selectively formed on the optoelectronic element 120, wherein the method of forming the cover layer may be ink-jet printing (ink-jet printing). , IJP), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), sputter deposition, atomic layer deposition (ALD) ) Or other suitable manufacturing methods. The material of the covering layer 160 may include, for example, silicon nitride (SiNx), aluminum oxide (AlOx), silicon oxynitride (SiON), indium zinc oxide (IZO), and polymers such as acrylic. Or other suitable materials. According to various embodiments of the present invention, a cover layer may be selectively formed on the photoelectric element 120 before forming the first barrier layer 130 according to requirements.

Please continue to refer to FIG. 1C, the first barrier layer 130 is processed to form a first barrier layer 130 having a first region 130a and a second region 130b. The material of the first region 130a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the second region 130b. In an embodiment, the first region 130a may have a higher nitrogen (N) element content than the second region 130b. The material of the second region 130b is, for example, silicon oxynitride or silicon oxide. In one embodiment, the second region 130b has a higher oxygen (O) element content than the first region 130a. The first barrier layer 130 has the water and oxygen barrier properties of the material in the first region 130a and the heat barrier properties of the material in the second region 130b, so that the first barrier layer 130 can have both heat and water and oxygen barriers. Effect. In general, the composition of the first barrier layer 130 may include, for example, a nitrogen content greater than 0 atomic percent (at%) to 10 at%, an oxygen content between 50 at% and 70 at%, and silicon (Si). The element content is between 30at% and 50at%, and the total content of silicon, nitrogen, and oxygen can be 100at%; the thermal conductivity of the first barrier layer 130 can be, for example, less than 5 watts/meter-absolute temperature, and the density can be, for example It is less than 2.2 g/cm ^3, and the water vapor transmission rate (WVTR) can be, for example, less than or equal to 10 ^-1 g/m ^ 2 -day.

In one embodiment, energy dispersive X-ray spectroscopy (energy dispersive spectroscopy, EDS), X-ray photoelectron spectroscopy (XPS) or other suitable methods may be used to compose the first barrier layer 130. analyze. Energy dispersive X-ray spectrometer can be attached to scanning electron microscopy (SEM) or transmission electron microscopy (TEM) and other instruments, such as line scan (line scan) or single point measurement Perform elemental analysis; the X-ray photoelectron spectrometer can perform elemental analysis by, for example, single-point measurement or depth measurement, and the composition of the first barrier layer 130 can be known in comparison with the composition of other elements in the measurement area.

1D, then a wavelength conversion layer 140 is formed on the first barrier layer 130, wherein the method of forming the wavelength conversion layer 140 can be, for example, ink-jet printing (IJP), photolithography process (photolithography process) Or other suitable manufacturing methods. The wavelength conversion layer 140 is usually a photoluminescence (PL) material, and may be, for example, a quantum dot (QD) or the like.

1E, the second barrier layer 150 can be formed on the wavelength conversion layer 140 by a solution process, and then the second barrier layer 150 is cured. The second barrier layer 150 can cover the top surface and sidewalls of the wavelength conversion layer 140, and the second barrier layer 150 has an island-like structure by controlling the process method and/or conditions (such as coating range, solution viscosity, etc.) . The material of the second barrier layer 150 used in the solution process may include, for example, polysilazane, polysiloxazane, or other suitable materials.

Please refer to FIG. 1F. In this embodiment, the top surface and the side surface of the second barrier layer 150 can be modified by treatment methods such as illumination, heating, or plasma to improve the barrier properties. The modified material of the second barrier layer 150 may, for example, include silicon nitride, silicon oxynitride or other suitable materials.

Please continue to refer to FIG. 1G, the second barrier layer 150 is processed to form a second barrier layer 150 having a third region 150a and a fourth region 150b. The material of the third region 150a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the fourth region 150b. In an embodiment, the third region 150a may have a higher nitrogen (N) element content than the fourth region 150b. The material of the fourth region 150b is, for example, silicon oxynitride. In one embodiment, the fourth region 150b has a higher oxygen (O) element content than the third region 150a. With the barrier properties of the material of the third region 150a in the second barrier layer 150, the water vapor transmission rate (WVTR) of the second barrier layer 150 can be, for example, less than or equal to 10 ^-1 G/m²-day, preferably less than or equal to 10 ^-2 g/m²-day. In general, the composition of the second barrier layer 150 may include, for example, a nitrogen content ranging from 5 at% to 45 at%, an oxygen content ranging from 5 at% to 50 at%, and a silicon content ranging from 30 at% to 50 at%. The total content of silicon element, nitrogen element, and oxygen element may be 100 at%; the density of the second barrier layer 150 may be, for example, greater than or equal to 2.2 g/cm ^3.

In one embodiment, considering the flexibility of the optoelectronic device package 100, the Young's modulus of the first barrier layer 130 and/or the second barrier layer 150 may be, for example, 3Gpa-10Gpa. In addition, in other embodiments, similar or even the same materials may be used in the solution process to form the first barrier layer 130 and the second barrier layer 150 respectively, and different processing methods are adopted in the subsequent based on different functional requirements, so that the second barrier layer The nitrogen content of the barrier layer 150 may be higher than the nitrogen content of the first barrier layer 130; the oxygen content of the first barrier layer 130 may be higher than the oxygen content of the second barrier layer 150; the first barrier The thickness of the layer 130 may be greater than the thickness of the second barrier layer 150; the density of the first barrier layer 130 may be less than the density of the second barrier layer 150. The various embodiments of the present invention can also be adjusted according to requirements by adopting the aforementioned design.

2 is a schematic partial cross-sectional view of the optoelectronic device package according to the second embodiment of the present invention. The optoelectronic device package 200 of the second embodiment is similar to the optoelectronic device package 100 of FIG. 1G, and this embodiment uses FIG. 2 to describe the optoelectronic device package 200. In FIG. 2, the same or similar reference numerals indicate the same or similar components, so the components described in FIGS. 1A to 1G will not be repeated here.

In this embodiment, before forming the first barrier layer 130, a planarization layer 260 may be selectively formed on the photoelectric element 120, wherein the method of forming the planarization layer 260 may be ink-jet printing (IJP), for example. , Slot die coating, spin coating or other suitable manufacturing process methods. The flat layer 260 is disposed between the substrate 110 and the first barrier layer 130 and covers at least one photoelectric element 120. According to various embodiments of the present invention, a flat layer 260 may be selectively formed on the photoelectric element 120 before forming the first barrier layer 130 as required.

3A to 3F are partial cross-sectional schematic diagrams of the optoelectronic device packaging process according to the third embodiment of the present invention. In FIGS. 3A to 3F, the same or similar reference numerals indicate the same or similar components, so the components described in FIGS. 1A to 1G will not be repeated here.

First, referring to FIG. 3A, after the optoelectronic element 120 is formed, a barrier 370 is provided around the optoelectronic element 120. In some embodiments, the cross section of the retaining wall 370 may have a rectangular, trapezoidal or other suitable shape; the forming method of the retaining wall 370 may be, for example, spray, screen printing, photolithography, Low-temperature sintering or other suitable methods, the present invention is not limited to this.

In one embodiment, a covering layer (not shown) may be selectively formed on the photoelectric element 120 and in the area surrounded by the barrier wall 370. The method of forming the covering layer may be, for example, ink-jet printing (ink-jet printing). , IJP). The material of the cover layer may include, for example, acrylic polymer or other suitable materials.

Next, referring to FIG. 3B, the first barrier layer 330 may be formed by inkjet printing on the photoelectric element 120 and the area surrounded by the barrier wall 370, and then the first barrier layer 330 is cured. The first barrier layer 330 may cover the top surface and sidewalls of the optoelectronic element 120. The material of the first barrier layer 330 used in the printing process may, for example, include polysilazane, polysiloxazane or other suitable materials. Next, the cured first barrier layer 330 is hydrolyzed in the atmosphere, and the degree of hydrolysis can be determined according to requirements, and then the surface is modified by treatment methods such as illumination, heating or plasma to improve its barrier properties. The irradiation treatment can be, for example, vacuum ultraviolet light (VUV); the heating treatment can be, for example, heating using a hot plate, oven, etc., and the gas used can include air, nitrogen (N ₂ ), oxygen (O ₂ ), etc.; plasma treatment can include the use of inert gas, hydrogen (H ₂ ), nitrogen (N ₂ ), oxygen (O ₂ ), fluorine-containing gas, chlorine (Cl ₂ ), etc. for plasma modification quality. The modified material of the first barrier layer 330 may, for example, include silicon nitride, silicon oxynitride or other suitable materials.

In an embodiment, the first barrier layer 330 may cover the top surface and sidewalls of the optoelectronic element 120 and the barrier wall 370. The method of forming the first barrier layer 330 may be ink-jet printing (IJP), for example. ), slot die coating, spin coating or other suitable manufacturing methods.

Referring to FIG. 3C, the first barrier layer 330 is processed to form a first barrier layer 330 having a first region 330a and a second region 330b. The material of the first region 330a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the second region 330b. In an embodiment, the first region 330a may have a higher nitrogen (N) element content than the second region 330b. The material of the second region 330b is, for example, silicon oxynitride or silicon oxide. In one embodiment, the second region 330b has a higher oxygen (O) element content than the first region 330a. The first barrier layer 330 has the water and oxygen barrier properties of the material in the first region 330a and the heat barrier properties of the material in the second region 330b, so that the first barrier layer 330 can have both heat and water and oxygen barriers. Effect. In general, the composition of the first barrier layer 330 may include, for example, a nitrogen content greater than 0at% to 10at%, an oxygen content between 50at% and 70at%, and a silicon content between 30at% and 50at%, where The total content of silicon, nitrogen, and oxygen can be 100at%; the thermal conductivity of the first barrier layer 330 can be, for example, less than 5 watts/meter-absolute temperature, and the density can be, for example, less than 2.2 g/cm ^3, water vapor penetration The water vapor transmission rate (WVTR) can be, for example, less than or equal to 10 ^-1 g/m²-day.

Referring to FIG. 3D, a wavelength conversion layer 340 is then formed on the first barrier layer 330 within the area surrounded by the barrier wall 370. The method of forming the wavelength conversion layer 340 may be inkjet printing or other suitable manufacturing methods, for example. The wavelength conversion layer 340 is usually a photoluminescence (PL) material, and may be, for example, a quantum dot (QD) or the like.

Referring to FIG. 3E, the second barrier layer 350 can be formed on the wavelength conversion layer 340 in the area surrounded by the barrier wall 370 by, for example, inkjet printing, and then the second barrier layer 350 is cured. The second barrier layer 350 may cover the top surface and sidewalls of the wavelength conversion layer 340. The material of the second barrier layer 350 used in the printing process may include, for example, polysilazane, polysiloxazane, or other suitable materials. Next, the cured first barrier layer 330 is subjected to surface modification using treatment methods such as illumination, heating or plasma to improve its barrier properties. The modified material of the second barrier layer 350 may, for example, include silicon nitride, silicon oxynitride or other suitable materials.

Please continue to refer to FIG. 3F, the second barrier layer 350 is processed to form a second barrier layer 350 having a third region 350a and a fourth region 350b. The material of the third region 350a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the fourth region 350b. In an embodiment, the third region 350a may have a higher nitrogen (N) element content than the fourth region 350b. The material of the second region 130b is, for example, silicon oxynitride. In one embodiment, the fourth region 350b has a higher oxygen (O) element content than the third region 350a. With the barrier properties of the material of the third region 350a in the second barrier layer 350, the water vapor transmission rate (WVTR) of the second barrier layer 350 can be, for example, less than or equal to 10 ^-1 G/m²-day, preferably less than or equal to 10 ^-2 g/m²-day. On the whole, the composition of the second barrier layer 350 may include, for example, a nitrogen content between 5 at% and 45 at%, an oxygen content between 5 at% and 50 at%, and a silicon content between 30 at% and 50 at%. The total content of silicon element, nitrogen element, and oxygen element may be 100 at%; the density of the second barrier layer 350 may be, for example, greater than or equal to 2.2 g/cm ^3.

In addition, in other embodiments, similar or even the same materials may be used in the printing process to form the first barrier layer 330 and the second barrier layer 350 respectively, and different processing methods are subsequently adopted based on different functional requirements, so that the second barrier layer The nitrogen content of the barrier layer 350 may be higher than the nitrogen content of the first barrier layer 330; the oxygen content of the first barrier layer 330 may be higher than the oxygen content of the second barrier layer 350; the first barrier The thickness of the layer 330 may be greater than the thickness of the second barrier layer 350; the density of the first barrier layer 330 may be less than the density of the second barrier layer 350.

4 is a schematic partial cross-sectional view of the optoelectronic device package according to the fourth embodiment of the present invention. The optoelectronic device package 400 of the fourth embodiment is similar to the optoelectronic device package 300 of FIG. 3F, and this embodiment uses FIG. 4 to describe the optoelectronic device package 400. In FIG. 4, the same or similar reference numerals indicate the same or similar components, so the components described in FIGS. 3A to 3F will not be repeated here.

In this embodiment, the second barrier layer 450 of the optoelectronic device package 400 can cover the wavelength conversion layer 340 and the top surface and sidewalls of the barrier wall 370, and can be controlled by the process method and/or conditions (such as coating range, solution The control of viscosity, etc.) makes the second barrier layer 450 have an island-like structure. The method for forming the second barrier layer 450 may be ink-jet printing (IJP), slot die coating, etc., for example. coating), spin coating (spin coating) or other suitable manufacturing methods. Then, the top surface and the side surface of the second barrier layer 450 can be modified by treatment methods such as illumination, heating or plasma to improve its barrier properties. The modified material of the second barrier layer 450 may include, for example, silicon nitride, silicon oxynitride, or other suitable materials.

The second barrier layer 450 is processed to form a second barrier layer 450 having a third region 450a and a fourth region 450b. The material of the third region 450a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the fourth region 450b. In an embodiment, the third region 450a may have a higher nitrogen (N) element content than the fourth region 450b. The material of the fourth region 450b is, for example, silicon oxynitride. In one embodiment, the fourth zone 450b has a higher oxygen (O) element content than the third zone 450a. With the barrier properties of the material of the third region 450a in the second barrier layer 450, the water vapor transmission rate (WVTR) of the second barrier layer 450 can be, for example, less than or equal to 10 ^-1 G/m²-day, preferably less than or equal to 10 ^-2 g/m²-day. In general, the composition of the second barrier layer 450 may include, for example, a nitrogen content between 5 at% and 45 at%, an oxygen content between 5 at% and 50 at%, and a silicon content between 30 at% and 50 at%. The total content of silicon element, nitrogen element, and oxygen element may be 100 at%; the density of the second barrier layer 450 may be, for example, greater than or equal to 2.2 g/cm ^3.

5 is a schematic partial cross-sectional view of the optoelectronic device package according to the fifth embodiment of the present invention. The optoelectronic device package 500 of the fifth embodiment is similar to the optoelectronic device package 200 of FIG. 2, and this embodiment uses FIG. 5 to describe the optoelectronic device package 500. In FIG. 5, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 2 will not be repeated here.

In this embodiment, before forming the first barrier layer 130, a planarization layer 560 can be selectively formed on the optoelectronic element 120, wherein the method of forming the planarization layer 560 can be ink-jet printing (IJP), for example. , Slot die coating, spin coating or other suitable manufacturing process methods. The flat layer 560 is disposed between the substrate 110 and the first barrier layer 130 and covers at least one photoelectric element 120. According to various embodiments of the present invention, a flat layer 560 may be selectively formed on the photoelectric element 120 before forming the first barrier layer 130 according to requirements.

After that, similar to the method of FIG. 3A, a barrier wall 370 is arranged at a peripheral position corresponding to the optoelectronic element 120, and the wavelength conversion layer 140 is formed on the first barrier layer 130 in the range surrounded by the barrier wall 370. Next, a second barrier layer 550 is formed. The second barrier layer 550 can cover the wavelength conversion layer 140 and the top surface and sidewalls of the barrier wall 370, and is determined by the process method and/or conditions (such as coating range, solution viscosity, etc.) The second barrier layer 550 has an island-like structure under the control of, and the method for forming the second barrier layer 550 can be, for example, ink-jet printing (IJP), slot die coating, Spin coating or other suitable manufacturing methods.

Then, the top surface and the side surface of the second barrier layer 550 can be modified by treatment methods such as illumination, heating or plasma to improve its barrier properties. The second barrier layer 550 is processed to form a second barrier layer 550 having a third region 550a and a fourth region 550b. The material of the third region 550a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the fourth region 550b. In an embodiment, the third region 550a may have a higher nitrogen (N) element content than the fourth region 550b. The material of the fourth region 550b is, for example, silicon oxynitride. In one embodiment, the fourth region 550b has a higher oxygen (O) element content than the third region 550a. With the barrier properties of the material of the third region 550a in the second barrier layer 550, the water vapor transmission rate (WVTR) of the second barrier layer 550 can be, for example, less than or equal to 10 ^-1 G/m²-day, preferably less than or equal to 10 ^-2 g/m²-day.

6 is a schematic partial cross-sectional view of the optoelectronic device package according to the sixth embodiment of the present invention. The optoelectronic device package 600 of the sixth embodiment is similar to the optoelectronic device package 300 of FIG. 3F, and this embodiment uses FIG. 6 to describe the optoelectronic device package 600. In FIG. 6, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 3F will not be repeated here.

In this embodiment, the buffer layer 680 may be selectively formed on the wavelength conversion layer 340 before the second barrier layer 350 is formed. The method of forming the buffer layer 680 may be ink-jet printing (IJP). ) Or other suitable manufacturing methods. The buffer layer 680 is disposed between the wavelength conversion layer 340 and the second barrier layer 350 and covers the wavelength conversion layer 340. The material of the buffer layer 680 may include, for example, acrylic polymer, epoxy polymer, or polyimide (PI). According to various embodiments of the present invention, the buffer layer 680 may be selectively formed on the wavelength conversion layer 340 before forming the second barrier layer 350 according to requirements.

FIG. 7 is a schematic partial cross-sectional view of the optoelectronic device package according to the seventh embodiment of the present invention. The optoelectronic device package 700 of the seventh embodiment is similar to the optoelectronic device package 300 of FIG. 3F, and this embodiment uses FIG. 7 to describe the optoelectronic device package 700. In FIG. 7, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 3F will not be repeated here.

In this embodiment, the optoelectronic device package 700 may include a plurality of optoelectronic devices 120 arranged in an array. A first barrier layer 730 is formed on a plurality of photoelectric elements, and then the first barrier layer 730 is cured. The first barrier layer 730 may cover the top surfaces and sidewalls of the plurality of optoelectronic elements 120 and the plurality of barrier walls 370, wherein the method of forming the first barrier layer 730 may be, for example, ink-jet printing (IJP), Slot die coating, spin coating or other suitable manufacturing methods. Then, the cured first barrier layer 730 is hydrolyzed in the atmosphere, and the degree of hydrolysis can be determined according to requirements, and then the surface is modified by treatment methods such as illumination, heating, or plasma to improve its barrier properties. The modified material of the first barrier layer 730 may, for example, include silicon nitride, silicon oxynitride, or other suitable materials.

The first barrier layer 730 is processed to form a first barrier layer 730 having a first region 730a and a second region 730b. The material of the first region 730a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the second region 730b. In an embodiment, the first region 730a may have a higher nitrogen (N) element content than the second region 730b. The material of the second region 730b is, for example, silicon oxynitride or silicon oxide. In one embodiment, the second region 730b has a higher oxygen (O) element content than the first region 730a. The first barrier layer 730 has the water and oxygen barrier properties of the material in the first region 730a and the heat barrier properties of the material in the second region 730b, so that the first barrier layer 730 can have both heat and water and oxygen barriers. Effect.

FIG. 8 is a schematic partial cross-sectional view of an optoelectronic device package according to an eighth embodiment of the present invention. The optoelectronic component package 800 of the eighth embodiment is similar to the optoelectronic component package 400 of FIG. 4, and this embodiment uses FIG. 8 to describe the optoelectronic component package 800. In FIG. 8, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 4 will not be repeated here.

In this embodiment, the optoelectronic device package 800 may include a plurality of optoelectronic devices arranged in an array. The second barrier layer 850 can cover the top surface and sidewalls of the plurality of wavelength conversion layers 340 and the plurality of barrier walls 370, and is controlled by the process method and/or conditions (such as coating range, solution viscosity, etc.) to make the second The barrier layer 850 has an island-like structure, and the method for forming the second barrier layer 850 may be ink-jet printing (IJP), slot die coating, spin coating, or spin coating. coating) or other suitable manufacturing methods. Then, the top surface and the side surface of the second barrier layer 850 can be modified by treatment methods such as illumination, heating or plasma to improve its barrier properties.

The second barrier layer 850 is processed to form a second barrier layer 850 having a third region 850a and a fourth region 850b. The material of the third region 850a is, for example, silicon nitride or silicon oxynitride, and can have a higher density than that of the fourth region 850b. In an embodiment, the third region 850a may have a higher nitrogen (N) element content than the fourth region 850b. The material of the fourth region 850b is silicon oxynitride, for example. In one embodiment, the fourth region 850b has a higher oxygen (O) element content than the third region 850a. By virtue of the barrier properties of the material of the third region 850a in the second barrier layer 850, the water vapor transmission rate (WVTR) of the second barrier layer 850 can be, for example, less than or equal to 10 ^-1 G/m²-day, preferably less than or equal to 10 ^-2 g/m²-day.

The photoelectric element of the above embodiment is an example of the inorganic light-emitting element of the above light-emitting structure, and can also be replaced with an inorganic light-emitting element of the lower light-emitting structure. For the inorganic light-emitting element with the lower light-emitting structure, reference may be made to the following embodiments.

FIG. 9 is a schematic partial cross-sectional view of the optoelectronic device package according to the ninth embodiment of the present invention. The optoelectronic device package 900 of the ninth embodiment is similar to the optoelectronic device package 100 of FIG. 1G, and this embodiment uses FIG. 9 to describe the optoelectronic device package 900. In FIG. 9, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 1G will not be repeated here.

In this embodiment, the optoelectronic device package 900 may further include a reflective layer 990, and the material of the reflective layer may include, for example, metal, alloy, or polymer. The metal may be, for example, silver (Ag), aluminum (Al), or copper ( Cu), palladium (Pd) or other suitable metal materials. The alloy can be a combination of the aforementioned metals, and the polymer can be, for example, a silicone compound (siloxane), an acrylic polymer, an epoxy system ( epoxy) polymer or other suitable materials. The reflective layer 990 may be disposed between the wavelength conversion layer 140 and the second barrier layer 150. The reflective layer 990 can improve the brightness of the optoelectronic device package 900.

FIG. 10 is a schematic partial cross-sectional view of the optoelectronic device package according to the tenth embodiment of the present invention. The optoelectronic component package 1000 of the tenth embodiment is similar to the optoelectronic component package 300 of FIG. 3F, and this embodiment uses FIG. 10 to describe the optoelectronic component package 1000. In FIG. 10, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 3F will not be repeated here.

In this embodiment, the optoelectronic device package 1000 may further include a reflective layer 1090, and the material of the reflective layer may include, for example, metal, alloy, or polymer. The metal may, for example, be silver (Ag), aluminum (Al), or copper ( Cu), palladium (Pd) or other suitable metal materials. The alloy can be a combination of the aforementioned metals, and the polymer can be, for example, a silicone compound (siloxane), an acrylic polymer, an epoxy system ( epoxy) polymer or other suitable materials. The reflective layer 1090 may be disposed between the wavelength conversion layer 340 and the second barrier layer 350. The reflective layer 1090 can improve the brightness of the optoelectronic device package 1000.

FIG. 11 is a schematic partial top view of the layout of the optoelectronic device package according to an embodiment of the present invention. For clarity, FIG. 11 omits some of the film layers and components. In the following embodiments, a single optoelectronic device packaging system takes the optoelectronic device package 100 as an example, but the present invention is not limited to this. In FIG. 11, the same or similar reference numerals indicate the same or similar components, so the components described in FIG. 1G will not be repeated here.

In this embodiment, the optoelectronic device package layout may include a plurality of optoelectronic devices 120 and are electrically connected to the first circuit layer 1122 and the second circuit layer 1124. A plurality of photoelectric elements 120 may constitute a pixel unit PU, and the plurality of pixel units PU on the substrate 110 may be arranged in an array, but the present invention is not limited herein. The first barrier layer 130 is formed by surface modification of the first barrier layer 130 to form a first barrier layer 130 having a first region 130a and a second region 130b, wherein the material of the first region 130a has water and oxygen blocking properties and the material of the second region 130b has The heat resistance characteristics enable the first barrier layer 130 to have both heat resistance and water and oxygen barrier effects. In one embodiment, the first barrier layer 130 may extend to the periphery of the substrate 110, and the first barrier layer 130 is formed as a continuous film layer, which helps the first circuit layer 1122 and/or the second circuit layer 1124 Make it not easy to break. The second barrier layer 150 is modified to form a second barrier layer 150 having a third region 150a and a fourth region 150b, wherein the material of the third region 150a has barrier properties, which can make the second barrier layer 150 The water vapor transmission rate (WVTR) can be, for example, less than or equal to 10 ^-1 g/m²-day, and preferably less than or equal to 10 ^-2 g/m²-day.

In the optoelectronic device package of the embodiment of the present invention, the surfaces of the first barrier layer and the second barrier layer are modified respectively, so that the first barrier layer can provide heat resistance and water and oxygen barrier effects. In addition, the second barrier layer covering the wavelength conversion layer has good barrier characteristics, which is beneficial to protect the wavelength conversion layer, thereby reducing the wavelength conversion layer from being damaged by heat and/or water and oxygen and affecting the luminous efficiency.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope and its equivalent scope.

100, 200, 300, 400, 500, 600, 700, 800, 900, 1000: Optoelectronic component package 110: substrate 120: Optoelectronics 130, 330, 730: the first barrier layer 130a, 330a, 730a: Zone 1 130b, 330b, 730b: second zone 140, 340: wavelength conversion layer 150, 350, 450, 550, 850: second barrier layer 150a, 350a, 450a, 550a, 850a: Zone 3 150b, 350b, 450b, 550b, 850b: the fourth zone 1122: first circuit layer 1124: second circuit layer 260, 560: Flat layer 370: Retaining Wall 680: buffer layer 990, 1090: reflective layer PU: pixel unit

1A to 1G are partial cross-sectional schematic diagrams of the optoelectronic device packaging process according to the first embodiment of the present invention. 2 is a schematic partial cross-sectional view of the optoelectronic device package according to the second embodiment of the present invention. 3A to 3F are partial cross-sectional schematic diagrams of the optoelectronic device packaging process according to the third embodiment of the present invention. 4 is a schematic partial cross-sectional view of the optoelectronic device package according to the fourth embodiment of the present invention. 5 is a schematic partial cross-sectional view of the optoelectronic device package according to the fifth embodiment of the present invention. 6 is a schematic partial cross-sectional view of the optoelectronic device package according to the sixth embodiment of the present invention. FIG. 7 is a schematic partial cross-sectional view of the optoelectronic device package according to the seventh embodiment of the present invention. FIG. 8 is a schematic partial cross-sectional view of an optoelectronic device package according to an eighth embodiment of the present invention. FIG. 9 is a schematic partial cross-sectional view of the optoelectronic device package according to the ninth embodiment of the present invention. FIG. 10 is a schematic partial cross-sectional view of the optoelectronic device package according to the tenth embodiment of the present invention. FIG. 11 is a schematic partial top view of the layout of the optoelectronic device package according to an embodiment of the present invention.

110: substrate

120: Optoelectronics

300: Optoelectronic component package

330: first barrier layer

330a: District 1

330b: District 2

340: wavelength conversion layer

350: second barrier layer

350a: District 3

350b: District 4

370: Retaining Wall

Claims (14)

An optoelectronic element package includes: a substrate; at least one optoelectronic element is disposed on the substrate; a first barrier layer is disposed on the substrate and covers the at least one optoelectronic element; a wavelength conversion layer is disposed on the first barrier On the barrier layer; and a second barrier layer covering the wavelength conversion layer, wherein the composition of the first barrier layer includes a nitrogen element content greater than 0 atomic percent (at%) to 10 at%, and an oxygen element content between 50 at% The second barrier layer includes a first region and a second region, the second region is located between the first region and the wavelength conversion layer, and the second barrier layer is between the first region and the wavelength conversion layer, and the second barrier layer The first zone has a higher nitrogen content than the second zone. According to the optoelectronic device package described in item 1 of the scope of patent application, the thermal conductivity of the first barrier layer is less than 5 W/m-absolute temperature, and the water vapor transmission rate is less than 10 ^-1 g/m2- sky. According to the optoelectronic device package described in the first item of the patent application, the composition of the second barrier layer includes nitrogen element content ranging from 5at% to 45at%, oxygen element content ranging from 5at% to 50at%, and silicon element The content is between 30at% and 50at%. The optoelectronic device package as described in item 1 of the scope of patent application, wherein the nitrogen content of the second barrier layer is higher than or equal to the nitrogen content of the first barrier layer, And the oxygen content of the first barrier layer is higher than or equal to the oxygen content of the second barrier layer. According to the optoelectronic device package described in claim 1, wherein the thickness of the first barrier layer is greater than the thickness of the second barrier layer. According to the optoelectronic device package described in claim 1, wherein the density of the first barrier layer is less than the density of the second barrier layer. According to the optoelectronic device package described in item 1 of the scope of patent application, the optoelectronic device package further includes at least one retaining wall, and the at least one retaining wall is disposed around the at least one optoelectronic device. The optoelectronic device package as described in item 7 of the scope of patent application, wherein the first barrier layer and/or the second barrier layer cover the at least one retaining wall. According to the optoelectronic device package described in claim 1, wherein the optoelectronic device package further includes a buffer layer, and the buffer layer is disposed between the wavelength conversion layer and the second barrier layer. According to the optoelectronic device package described in item 9 of the scope of patent application, the material of the buffer layer includes acrylic polymer, epoxy polymer or polyimide. According to the optoelectronic device package described in item 1 of the scope of patent application, the optoelectronic device package further includes a reflective layer, and the reflective layer is disposed between the wavelength conversion layer and the second barrier layer. In the optoelectronic device package described in item 11 of the scope of patent application, the material of the reflective layer includes metal, alloy or polymer. The optoelectronic device package according to claim 1, wherein the optoelectronic device package further includes a flat layer, the flat layer is disposed between the substrate and the first barrier layer, and covers the at least one optoelectronic device. element. According to the optoelectronic device package described in claim 1, wherein the first area completely covers the top surface and the side surface of the second area to seal the second area.

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