TWI724487B - Current controlling device - Google Patents
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Description
本發明係關於一種控制裝置,特別是關於一種可使電流強度分佈均勻之電流控制裝置。 The present invention relates to a control device, in particular to a current control device that can make the current intensity distribution uniform.
現代電子器件,多需要供電啟動。因此,電流源或電壓源為必須。此外,隨電子器件結構的不同複雜程度,其所使用之均流裝置亦具有不同的架構。舉例而言,基於現代人對於視覺娛樂的需求,顯示器尺寸已逐漸朝向大尺寸方向發展。當顯示器尺寸越大,其內之均流裝置之架構越複雜,因此,對電流分佈之控制越困難。現今此種大型顯示器,仍遭遇因電流分佈不均,致使其亮度或色彩不均的問題。因此,仍須發展可均勻控制電流強度分佈的電流控制裝置。 Modern electronic devices often require power supply to start. Therefore, a current source or a voltage source is necessary. In addition, with the different complexity of the structure of the electronic device, the current sharing device used in it also has a different structure. For example, based on the demand of modern people for visual entertainment, the size of the display has gradually developed in the direction of large size. As the size of the display is larger, the structure of the current sharing device is more complicated, and therefore, it is more difficult to control the current distribution. Nowadays, such large displays still suffer from uneven current distribution, resulting in uneven brightness or color. Therefore, it is still necessary to develop a current control device that can uniformly control the current intensity distribution.
依據本發明一實施方式,提供一種電流控制裝置,其包含一導電基材以及至少一電流控制結構。至少一電流控制結構形成於導電基材上。其中當自導電基材輸入一電流時,透過至少一電流控制結構令電流被截斷或分流,令導電基材上形成均勻之一電流強度分佈。 According to one embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control structure. At least one current control structure is formed on the conductive substrate. When a current is input from the conductive substrate, the current is cut off or shunted through at least one current control structure, so that a uniform current intensity distribution is formed on the conductive substrate.
於上述實施方式的電流控制裝置中,導電基材之材質可為一銦錫氧化物。 In the current control device of the above embodiment, the material of the conductive substrate may be an indium tin oxide.
於上述實施方式的電流控制裝置中,電流控制結構可為一溝槽。 In the current control device of the above embodiment, the current control structure may be a groove.
於上述實施方式的電流控制裝置中,溝槽可透過一物理性破壞方式或一化學性破壞方式形成。 In the current control device of the above embodiment, the trench can be formed by a physical destruction method or a chemical destruction method.
於上述實施方式的電流控制裝置中,電流控制結構之數量為二或以上。各電流控制結構彼此平行或垂直間隔排列。 In the current control device of the above embodiment, the number of current control structures is two or more. The current control structures are arranged in parallel or perpendicularly spaced apart from each other.
於上述實施方式的電流控制裝置中,各電流控制結構間之一垂直距離可相同或相異。 In the current control device of the above embodiment, one of the vertical distances between the current control structures may be the same or different.
依據本發明另一實施方式,提供一種電流控制裝置,其包含一導電基材以及至少一電流控制結構。至少一電流控制結構形成於導電基材上。其中當自導電基材輸入一電流時,透過至少一電流控制結構令電流被增益或分流,令導電基材上形成均勻之一電流強度分佈。 According to another embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control structure. At least one current control structure is formed on the conductive substrate. When a current is input from the conductive substrate, the current is increased or shunted through at least one current control structure, so that a uniform current intensity distribution is formed on the conductive substrate.
於上述實施方式的電流控制裝置中,導電基材之材質可為一銦錫氧化物、氟摻雜氧化錫導電玻璃、銻摻雜氧化錫、鋁摻雜氧化鋅、鎵摻雜氧化鋅或銦摻雜氧化鋅。 In the current control device of the above embodiment, the material of the conductive substrate can be an indium tin oxide, fluorine-doped tin oxide conductive glass, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, or indium Doped with zinc oxide.
於上述實施方式的電流控制裝置中,電流控制結構包含一可導電材質。 In the current control device of the above embodiment, the current control structure includes a conductive material.
於上述實施方式的電流控制裝置中,電流控制結構可透過點膠、網印、蒸鍍、濺鍍、塗佈、噴霧、物理沉積或化學沉積形成於導電基材上。 In the current control device of the above embodiment, the current control structure can be formed on the conductive substrate through dispensing, screen printing, evaporation, sputtering, coating, spraying, physical deposition or chemical deposition.
於上述實施方式的電流控制裝置中,電流控制結構之數量為二或以上。各電流控制結構可形成於導電基材上之一中央區域或一邊緣區域。 In the current control device of the above embodiment, the number of current control structures is two or more. Each current control structure can be formed on a central area or an edge area on the conductive substrate.
依據本發明又一實施方式,提供一種電流控制裝置,包含一導電基材以及至少一電流控制單元。至少一電流控制單元導通連接於導電基材外部。其中當自導電基材輸入一電流時,透過至少一電流控制單元令電流於導電基材外被分流,令導電基材上形成均勻之一電流強度分佈。 According to another embodiment of the present invention, a current control device is provided, which includes a conductive substrate and at least one current control unit. At least one current control unit is conductively connected to the outside of the conductive substrate. When a current is input from the conductive substrate, the current is shunted outside the conductive substrate through at least one current control unit, so that a uniform current intensity distribution is formed on the conductive substrate.
於上述實施方式的電流控制裝置中,電流控制單元可為一導電線或一可變電阻。 In the current control device of the above embodiment, the current control unit may be a conductive wire or a variable resistor.
於上述實施方式的電流控制裝置中,電流控制單元之一端連接導通導電基材之一端,電流控制單元之另一端連接導通導電基材之另一端。 In the current control device of the above embodiment, one end of the current control unit is connected to one end of the conductive substrate, and the other end of the current control unit is connected to the other end of the conductive substrate.
100‧‧‧電流控制裝置 100‧‧‧Current control device
101‧‧‧電流控制結構 101‧‧‧Current control structure
102‧‧‧電流控制結構 102‧‧‧Current control structure
103‧‧‧電流控制結構 103‧‧‧Current control structure
104‧‧‧狹縫 104‧‧‧Slit
105‧‧‧電流控制結構 105‧‧‧Current control structure
106‧‧‧電流控制單元 106‧‧‧Current Control Unit
110‧‧‧導電基材 110‧‧‧Conductive substrate
A‧‧‧區域 A‧‧‧area
B‧‧‧區域 B‧‧‧area
I‧‧‧電流 I‧‧‧Current
d1‧‧‧垂直距離 d1‧‧‧Vertical distance
d2‧‧‧垂直距離 d2‧‧‧Vertical distance
第1圖係繪示一電流輸入至一導電基材之電流分佈狀況示意圖;第2圖係繪示本發明之電流控制裝置之第一種架構示意圖;第3圖係繪示本發明之電流控制裝置之第二種架構示意圖;第4圖係繪示本發明之電流控制裝置之第三種架構示意圖;第5圖係繪示本發明之電流控制裝置之第四種架構示意圖;以及第6圖係繪示本發明之電流控制裝置之第五種架構示意圖。 Figure 1 is a schematic diagram of the current distribution of a current input to a conductive substrate; Figure 2 is a schematic diagram of the first structure of the current control device of the present invention; Figure 3 is a schematic diagram of the current control of the present invention A schematic diagram of the second structure of the device; Figure 4 is a schematic diagram of the third structure of the current control device of the present invention; Figure 5 is a schematic diagram of the fourth structure of the current control device of the present invention; and Figure 6 It is a schematic diagram showing the fifth structure of the current control device of the present invention.
於下列的描述中,將參照所附圖式說明本新型之具體實施例。許多實務上的細節將在以下敘述中一併說明。然而,這些實務上的細節不應該用以限制本新型。亦即,在本新型部分實施例中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之;並且重複之元件將可能使用相同的編號表示之。 In the following description, specific embodiments of the present invention will be described with reference to the accompanying drawings. Many practical details will be explained in the following description. However, these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some conventionally used structures and elements will be drawn in a simple schematic manner in the drawings; and repeated elements may be represented by the same numbers.
請參照第1圖。第1圖係繪示一電流I輸入至一導電基材110之電流分佈狀況示意圖。第1圖中,一電流I自導電基材110之一端輸入導電基材110。此時,電流I係擴散分佈於導電基材110上。然而,於靠近電流I之輸入端,其電流強度較強,而隨著越遠離導電基材110之輸入端,其電流強度將越減弱。換言之,第1圖中之區域A與區域B之電流強度分佈將不相等。區域A因靠近電流I之輸入端,其電流強度分佈將大於較遠離電流I之輸入端之區域B之電流強度分佈。習知解決此種電流強度分佈不均之方式,係由導電基材110之輸入端注入更大電流,然而其注入之比例不僅難以控制,且經常發生使元件燒毀之狀況。
Please refer to Figure 1. FIG. 1 is a schematic diagram showing the current distribution of a current I input to a
第2圖係繪示本發明之電流控制裝置100之第一種架構示意圖。第2圖中,電流控制裝置100包含一導電基材110、多個電流控制結構101、多個電流控制結構102及多個電流控制結構103。電流I自導電基材110之一端輸入導電基材
110,並擴散分佈於導電基材110上。各電流控制結構101間、各電流控制結構102間以及各電流控制結構103間彼此皆平行間隔排列。並且,各電流控制結構101間、各電流控制結構102間以及各電流控制結構103間形成一狹縫104。導電基材110之材質可為一銦錫氧化物(ITO),但不以此為限,亦可為氟摻雜氧化錫(FTO)、銻摻雜氧化錫(ATO)、鋁摻雜氧化鋅(AZO)、鎵摻雜氧化鋅(GZO)或銦摻雜氧化鋅(IZO)等透明導電膜。電流控制結構101、102、103可為一溝槽。當電流I流經溝槽時,將被截斷,因此由狹縫104分流而出。藉由此種方式,令靠近輸入端之電流I之強度減弱,令導電基材110上形成均勻之電流強度分佈。各電流控制結構101間及各電流控制結構102間相距一垂直距離d1;各電流控制結構102間及各電流控制結構103間相距一垂直距離d2。垂直距離d1及垂直距離d2可相同或相異,可視不同狀況調整電流I之分流比例。電流控制結構101、102、103可透過物理性或化學性破壞方式形成,例如雷射切割、研磨、刀具切割、離子束(或電子束)轟擊、化學蝕刻等,並無特別限制。
FIG. 2 is a schematic diagram of the first structure of the
現一併參照第3圖及第4圖。第3圖係繪示本發明之電流控制裝置100之第二種架構示意圖。第4圖係繪示本發明之電流控制裝置100之第三種架構示意圖。第3圖及第4圖中,電流控制裝置100皆包含一導電基材110以及至少一電流控制結構105。電流I自導電基材110之一端輸入導電基材110,並擴散分佈於導電基材110上。電流控制結構105可為一導電單元。導電單元可透過點膠、網印、蒸鍍、濺鍍、塗佈、
噴霧、物理沉積或化學沉積等方式形成於導電基材110上,並無特別限制。於一實施例中,電流控制結構105包含可導電材質(金屬或導電高分子等)。藉此,當電流I流經電流控制結構105時,透過電流控制結構105之連通導電,令離輸入端較近且具較強電流強度之區域之電流,可對離輸入端較遠且具較弱電流強度之區域之電流進行增益且分流,令導電基材110上形成均勻之電流強度分佈。第3圖中,電流控制結構105形成於導電基材110之邊緣區域;第4圖中,電流控制結構105則形成於導電基材110之中央區域。透過於導電基材110上不同位置形成之電流控制結構105,可獲得不同之電流強度增益效果。
Now refer to Figure 3 and Figure 4 together. FIG. 3 is a schematic diagram of the second structure of the
請參照第5圖。第5圖係繪示本發明之電流控制裝置100之第四種架構示意圖。第5圖中,電流控制裝置100包含一導電基材110及至少一電流控制單元106。電流控制單元106以跳線方式導通連接於導電基材110外部。第5圖中,電流I自導電基材110之一端輸入導電基材110,並擴散分佈於導電基材110上。電流控制單元106之一端連接導通導電基材110之一端,電流控制單元106之另一端連接導通導電基材110之另一端。藉此,透過電流控制單元106,可將靠近輸入端且電流強度較強之電流I,於導電基材110外被分流,令導電基材110之另一端亦可獲得電流強度相當之電流輸入,令導電基材110上形成均勻之電流強度分佈。電流控制單元106可為一導電線或一可變電阻。當使用可變電阻時,可以調整電流分流之比例,以適應各種不同狀況。
Please refer to Figure 5. FIG. 5 is a schematic diagram showing the fourth structure of the
請參照第6圖。第6圖係繪示本發明之電流控制裝置100之第五種架構示意圖。第6圖中之電流控制裝置100為前述實施例之綜合運用。除使用電流控制結構101、102、103於導電基材110上進行電流I之截斷或分流、使用電流控制結構105於導電基材110上進行電流I之增益及分流,亦使用電流控制單元106自導電基材110外進行電流I之分流。藉此,整體導電基材110可獲得更均勻之電流強度分佈。當將上述電流控制裝置100應用於大面積之液晶(LCD)或有機發光二極體(OLED)顯示裝置時,得以簡易之方式獲致均勻之色彩及亮度分佈,令視覺觀感更加舒適。
Please refer to Figure 6. FIG. 6 is a schematic diagram showing the fifth structure of the
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明的精神和範圍內,當可作各種的更動與潤飾,因此本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be subject to the scope of the attached patent application.
100‧‧‧電流控制裝置 100‧‧‧Current control device
101‧‧‧電流控制結構 101‧‧‧Current control structure
102‧‧‧電流控制結構 102‧‧‧Current control structure
103‧‧‧電流控制結構 103‧‧‧Current control structure
104‧‧‧狹縫 104‧‧‧Slit
110‧‧‧導電基材 110‧‧‧Conductive substrate
I‧‧‧電流 I‧‧‧Current
d1‧‧‧垂直距離 d1‧‧‧Vertical distance
d2‧‧‧垂直距離 d2‧‧‧Vertical distance
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CN105210219A (en) * | 2013-02-26 | 2015-12-30 | 威拓股份有限公司 | Current density distributor for use in an electrode |
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