TWI699581B - Pixel array substrate - Google Patents
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- TWI699581B TWI699581B TW108132844A TW108132844A TWI699581B TW I699581 B TWI699581 B TW I699581B TW 108132844 A TW108132844 A TW 108132844A TW 108132844 A TW108132844 A TW 108132844A TW I699581 B TWI699581 B TW I699581B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
Description
本發明是有關於一種顯示面板,且特別是有關於一種畫素陣列基板。The present invention relates to a display panel, and particularly relates to a pixel array substrate.
隨著科技產業的蓬勃發展,舉凡行動電話(mobile phone)、平板電腦(tablet computer)或電子書(eBook)等顯示裝置已被廣泛應用於日常生活中。尤其近年來,隨著立體顯示(stereoscopic display)及虛擬實境(virtual reality)等多媒體應用的出現,為了提供令人驚豔的視覺效果,具超高解析度的顯示面板需求逐漸增加。With the vigorous development of the technology industry, display devices such as mobile phones, tablet computers, or eBooks have been widely used in daily life. Especially in recent years, with the emergence of multimedia applications such as stereoscopic display and virtual reality, in order to provide stunning visual effects, the demand for display panels with ultra-high resolution has gradually increased.
然而,隨著顯示面板解析度不斷地提升,驅動電路的可佈局空間勢必不足,進而導致畫素的開口率下降。因此,如何在提升顯示面板解析度與畫素開口率的同時,維持既有的成本優勢是相關廠商所致力於克服的難題之一。However, as the resolution of the display panel continues to increase, the layout space of the driving circuit is inevitably insufficient, which in turn causes the pixel aperture ratio to decrease. Therefore, how to maintain the existing cost advantage while improving the display panel resolution and pixel aperture ratio is one of the problems that relevant manufacturers are committed to overcome.
本發明提供一種畫素陣列基板,具有較高的畫素開口率。The present invention provides a pixel array substrate with a higher pixel aperture ratio.
本發明的畫素陣列基板,包括基板、第一訊號線、第一畫素、絕緣層、有機層以及遮光圖案。第一訊號線與第一畫素設置於基板上。第一畫素包括彼此電性連接的第一主動元件以及第一畫素電極。第一主動元件電性連接第一訊號線。絕緣層覆蓋基板,且具有重疊於第一訊號線的第一開口。第一訊號線具有定義第一開口的第一上表面。有機層設置於絕緣層上,且具有連通於第一開口的第二開口。有機層具有定義第一開口的底面以及定義第二開口的側壁,且底面連接於側壁。遮光圖案覆蓋第一訊號線的第一上表面以及有機層的側壁與底面,且具有位於第一開口的第一部分以及位於第二開口並凸伸出有機層的第二部分。第一部分與第二部分分別具有第一寬度與第二寬度,且第一寬度大於第二寬度。The pixel array substrate of the present invention includes a substrate, a first signal line, a first pixel, an insulating layer, an organic layer, and a light-shielding pattern. The first signal line and the first pixel are arranged on the substrate. The first pixel includes a first active element and a first pixel electrode electrically connected to each other. The first active element is electrically connected to the first signal line. The insulating layer covers the substrate and has a first opening overlapping the first signal line. The first signal line has a first upper surface defining a first opening. The organic layer is disposed on the insulating layer and has a second opening connected to the first opening. The organic layer has a bottom surface defining the first opening and a side wall defining the second opening, and the bottom surface is connected to the side wall. The light-shielding pattern covers the first upper surface of the first signal line and the sidewall and bottom surface of the organic layer, and has a first portion located in the first opening and a second portion located in the second opening and protruding from the organic layer. The first part and the second part respectively have a first width and a second width, and the first width is greater than the second width.
在本發明的一實施例中,上述的畫素陣列基板的遮光圖案的第一部分與第二部分的材質相同。In an embodiment of the present invention, the material of the first part and the second part of the light shielding pattern of the aforementioned pixel array substrate is the same.
在本發明的一實施例中,上述的畫素陣列基板更包括設置於基板上的間隙物。遮光圖案的第一頂面與基板的上表面之間具有第一高度。間隙物與基板的上表面之間具有第二高度,且第一高度小於第二高度。In an embodiment of the present invention, the aforementioned pixel array substrate further includes spacers provided on the substrate. There is a first height between the first top surface of the light shielding pattern and the upper surface of the substrate. There is a second height between the spacer and the upper surface of the substrate, and the first height is smaller than the second height.
在本發明的一實施例中,上述的畫素陣列基板的遮光圖案與間隙物屬於同一膜層。In an embodiment of the present invention, the light-shielding pattern and the spacer of the aforementioned pixel array substrate belong to the same film layer.
在本發明的一實施例中,上述的畫素陣列基板的有機層為彩色濾光層與有機絕緣層的疊層結構。有機絕緣層覆蓋彩色濾光層,且設有定義第二開口的側壁。In an embodiment of the present invention, the organic layer of the aforementioned pixel array substrate is a stacked structure of a color filter layer and an organic insulating layer. The organic insulating layer covers the color filter layer and is provided with sidewalls defining the second opening.
在本發明的一實施例中,上述的畫素陣列基板的絕緣層為第一子絕緣層與第二子絕緣層的疊層結構。第一子絕緣層位於基板與第一訊號線之間。第二子絕緣層位於第一訊號線與有機層之間,且第一開口貫穿第二子絕緣層。In an embodiment of the present invention, the insulating layer of the above-mentioned pixel array substrate is a laminated structure of the first sub-insulating layer and the second sub-insulating layer. The first sub-insulating layer is located between the substrate and the first signal line. The second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer.
在本發明的一實施例中,上述的畫素陣列基板的第一開口更貫穿第一子絕緣層。第一訊號線還具有定義第一開口的第一下表面以及連接第一上表面與第一下表面的第一側面,且遮光圖案更覆蓋第一訊號線的第一下表面與第一側面。In an embodiment of the present invention, the first opening of the aforementioned pixel array substrate further penetrates the first sub-insulating layer. The first signal line further has a first lower surface defining the first opening and a first side surface connecting the first upper surface and the first lower surface, and the shading pattern further covers the first lower surface and the first side surface of the first signal line.
在本發明的一實施例中,上述的畫素陣列基板更包括第二訊號線與第二畫素。第二訊號線與該第一訊號線相鄰且平行排列於基板上。第二訊號線具有定義第一開口的第二上表面,且遮光圖案更覆蓋第二訊號線的第二上表面。第二畫素包括彼此電性連接的第二主動元件與第二畫素電極。第二主動元件電性連接第二訊號線。第一訊號線與第二訊號線位於第一畫素與第二畫素之間,且遮光圖案位於第一訊號線與第二訊號線之間。In an embodiment of the present invention, the aforementioned pixel array substrate further includes a second signal line and a second pixel. The second signal line is adjacent to the first signal line and is arranged in parallel on the substrate. The second signal line has a second upper surface defining the first opening, and the shading pattern further covers the second upper surface of the second signal line. The second pixel includes a second active element and a second pixel electrode electrically connected to each other. The second active element is electrically connected to the second signal line. The first signal line and the second signal line are located between the first pixel and the second pixel, and the shading pattern is located between the first signal line and the second signal line.
在本發明的一實施例中,上述的畫素陣列基板的絕緣層為第一子絕緣層與第二子絕緣層的疊層結構。第一子絕緣層位於基板與第一訊號線之間。第二子絕緣層位於第一訊號線與有機層之間,且第一開口貫穿第二子絕緣層。In an embodiment of the present invention, the insulating layer of the above-mentioned pixel array substrate is a laminated structure of the first sub-insulating layer and the second sub-insulating layer. The first sub-insulating layer is located between the substrate and the first signal line. The second sub-insulating layer is located between the first signal line and the organic layer, and the first opening penetrates the second sub-insulating layer.
在本發明的一實施例中,上述的畫素陣列基板的第一開口更貫穿第一子絕緣層。第一訊號線還具有定義第一開口的第一下表面以及連接第一上表面與第一下表面的第一側面。第二訊號線還具有定義第一開口的第二下表面以及連接第二上表面與第二下表面的第二側面,且遮光圖案更覆蓋第一訊號線的第一下表面與第一側面以及第二訊號線的第二下表面與第二側面。In an embodiment of the present invention, the first opening of the aforementioned pixel array substrate further penetrates the first sub-insulating layer. The first signal line also has a first lower surface defining the first opening and a first side surface connecting the first upper surface and the first lower surface. The second signal line further has a second lower surface defining the first opening and a second side surface connecting the second upper surface and the second lower surface, and the light shielding pattern further covers the first lower surface and the first side surface of the first signal line and The second lower surface and the second side surface of the second signal line.
在本發明的一實施例中,上述的畫素陣列基板的有機層為彩色濾光層。In an embodiment of the present invention, the organic layer of the aforementioned pixel array substrate is a color filter layer.
基於上述,在本發明一實施例的畫素陣列基板中,絕緣層與有機層分別具有相連通的第一開口與第二開口,且電性連接於畫素之主動元件的第一訊號線與這兩開口相重疊。透過遮光圖案位於第二開口的第二部分的寬度小於遮光圖案位於第一開口的第一部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素的開口率(Aperture Ratio,AR)。Based on the foregoing, in the pixel array substrate of an embodiment of the present invention, the insulating layer and the organic layer respectively have a first opening and a second opening that are connected to each other, and are electrically connected to the first signal line and the first signal line of the active element of the pixel. The two openings overlap. The width of the second portion of the light-shielding pattern located in the second opening is smaller than the width of the first portion of the light-shielding pattern located in the first opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel. Ratio, AR).
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或例如±30%、±20%、±15%、±10%、±5%內。再者,本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "approximately", "approximately", "essentially", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account all The measurement in question and the specific number of errors associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, the "approximate", "approximate", "essential", or "substantially" used herein can be based on measurement properties, cutting properties, or other properties to select a more acceptable range of deviation or standard deviation, and Not one standard deviation applies to all properties.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" can mean that there are other components between the two components.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其它元件的「下」側的元件將被定向在其它元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上面」或「下面」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device other than those shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "above" or "below" can include an orientation of above and below.
現將詳細地參考本發明的示範性實施方式,示範性實施方式的實例說明於所附圖式中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.
圖1是本發明的第一實施例的畫素陣列基板的俯視圖。圖2A至圖2E是圖1的畫素陣列基板的製造流程的剖視圖。圖2E對應於圖1的剖線A-A’。圖2F是採用圖2E的畫素陣列基板的顯示面板的剖視圖。為清楚呈現起見,圖1省略了圖2E的絕緣層110、有機絕緣層122、遮光圖案130與間隙物135的繪示。特別一提的是,圖2E的畫素陣列基板10可應用於顯示面板1(如圖2F所示)。FIG. 1 is a top view of a pixel array substrate according to a first embodiment of the invention. 2A to 2E are cross-sectional views of the manufacturing process of the pixel array substrate of FIG. 1. Fig. 2E corresponds to the section line A-A' of Fig. 1. 2F is a cross-sectional view of a display panel using the pixel array substrate of FIG. 2E. For clarity of presentation, FIG. 1 omits the illustration of the insulating
請參照圖1及圖2E,畫素陣列基板10包括基板101、多條訊號線以及多個畫素PX。在本實施例中,多條訊號線包括多條掃描線SL與多條資料線DL。多條掃描線SL相交於多條資料線DL並定義出多個畫素區。多個畫素PX分別設置於這些畫素區中,且各自電性連接於對應的一條掃描線SL與對應的一條資料線DL。舉例而言,多條資料線DL沿方向X排列於基板101上,且在方向Y上延伸,其中方向X實質上可垂直於方向Y。多條掃描線SL沿方向Y排列於基板101上,且在方向X上延伸。在本實施例中,任兩相鄰的資料線DL之間可設有一個畫素PX,且此畫素PX可電性連接於這兩相鄰的資料線DL的其中一者,但本發明不以此為限。1 and 2E, the
在本實施例中,畫素陣列基板10還可選擇性地包括多條共用線CL。舉例來說,這些共用線CL可沿方向Y排列於基板101上,且在方向X上延伸。亦即,共用線CL可選擇性地平行於掃描線SL。基於導電性的考量,資料線DL、掃描線SL與共用線CL的材料一般是使用金屬材料。然而,本發明不限於此,根據其他的實施例,資料線DL、掃描線SL與共用線CL也可使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。需說明的是,本發明並不以圖式揭示內容而加以限制資料線DL、掃描線SL與共用線CL的數量,在一些實施例中,資料線DL、掃描線SL與共用線CL的數量可根據實際的畫素PX數量(即顯示面板的解析度)需求而調整。In this embodiment, the
進一步而言,畫素PX包括絕緣層110、主動元件T以及畫素電極PE。絕緣層110包括第一子絕緣層111與第二子絕緣層112,其中第一子絕緣層111覆蓋掃描線SL,第二子絕緣層112覆蓋第一子絕緣層111的部分表面、資料線DL以及主動元件T。在本實施例中,第一子絕緣層111與第二子絕緣層112可為一層或兩層以上的無機絕緣層,無機絕緣層的材質包括氧化矽(SiO
2)、氮化矽(SiNx)、氮氧化矽(SiOxNy;x>y)、氧氮化矽(SiNxOy;x>y)、或其他適合的無機絕緣材料。
Furthermore, the pixel PX includes an insulating
舉例而言,形成主動元件T的方法可包括以下步驟:於基板101上依序形成閘極G、第一子絕緣層111、半導體圖案SC、歐姆接觸層OC、源極S與汲極D,其中源極S與汲極D係透過歐姆接觸層OC(例如兩個歐姆接觸圖案)分別電性連接於半導體圖案SC的不同兩區。主動元件T的源極S與汲極D分別電性連接於資料線DL與畫素電極PE。在本實施例中,主動元件T的閘極G可選擇性地配置在半導體圖案SC的下方,即閘極G位於半導體圖案SC與基板101之間,以形成底部閘極型薄膜電晶體(bottom-gate TFT),但本發明不以此為限。根據其他的實施例,主動元件的閘極G也可配置在半導體圖案SC的上方,以形成頂部閘極型薄膜電晶體(top-gate TFT)。For example, the method of forming the active device T may include the following steps: sequentially forming a gate electrode G, a first
另一方面,半導體圖案SC的材質例如是非晶矽半導體(amorphous silicon semiconductor)材料,也就是說,主動元件T可以是非晶矽薄膜電晶體(Amorphous Silicon TFT,a-Si TFT)。然而,本發明不限於此,在其他實施例中,主動元件也可以是低溫多晶矽薄膜電晶體(LTPS TFT)、微晶矽薄膜電晶體(micro-Si TFT)或金屬氧化物電晶體(Metal Oxide Transistor)。在本實施例中,歐姆接觸層OC的材料可包括含有摻雜物(dopant)之金屬氧化物半導體材料、含有摻雜物之多晶矽、含有摻雜物之非晶矽或是其他合適的含有摻雜物之半導體材料、或其它合適的材料、或上述之組合。On the other hand, the material of the semiconductor pattern SC is, for example, an amorphous silicon semiconductor (amorphous silicon semiconductor) material, that is, the active device T may be an amorphous silicon thin film transistor (a-Si TFT). However, the present invention is not limited to this. In other embodiments, the active device may also be a low-temperature polysilicon thin film transistor (LTPS TFT), a micro-Si TFT or a metal oxide transistor (Metal Oxide). Transistor). In this embodiment, the material of the ohmic contact layer OC may include metal oxide semiconductor materials containing dopants, polysilicon containing dopants, amorphous silicon containing dopants, or other suitable dopants containing Impurity semiconductor materials, or other suitable materials, or a combination of the above.
在本實施例中,主動元件T的源極S與汲極D以及資料線DL的材質可選擇性地相同,主動元件T的閘極G與掃描線SL的材質可選擇性地相同。也就是說,主動元件T的源極S與汲極D以及資料線DL可形成於同一膜層,主動元件T的閘極G與掃描線SL可形成於同一膜層。畫素電極PE可選擇性地為穿透式電極,穿透式電極的材質包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。然而,本發明並不限於此,在其他實施例中,畫素電極PE也可以是反射式電極,反射式電極的材質包括金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。In this embodiment, the materials of the source S and the drain D of the active device T and the data line DL can be selectively the same, and the materials of the gate G and the scan line SL of the active device T can be selectively the same. In other words, the source S and drain D of the active device T and the data line DL can be formed on the same film layer, and the gate G and the scan line SL of the active device T can be formed on the same film layer. The pixel electrode PE can optionally be a penetrating electrode. The material of the penetrating electrode includes metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable , Or a stacked layer of at least two of the above. However, the present invention is not limited to this. In other embodiments, the pixel electrode PE may also be a reflective electrode. The material of the reflective electrode includes metals, alloys, nitrides of metallic materials, oxides of metallic materials, and metallic materials. Oxynitride, or other suitable materials, or stacked layers of metal materials and other conductive materials.
畫素陣列基板10更包括有機層120與遮光圖案130。有機層120設置於絕緣層110上,且遮光圖案130在基板101的法線方向上重疊於資料線DL。也就是說,遮光圖案130可位於沿方向X排列且相鄰的兩畫素PX之間。在本實施例中,遮光圖案130可選擇性地貫穿有機層120與絕緣層110以覆蓋資料線DL與基板101的部分上表面101s。據此,可增加遮光圖案130在基板101的法線方向上的光學密度(optical density,OD),有助於降低資料線DL對於外在環境光(ambient light)的反射,進而提升顯示面板的暗態表現。另一方面,畫素PX的畫素電極PE可設置於有機層120上,並貫穿有機層120與第二子絕緣層112以電性連接主動元件T的汲極D。舉例來說,有機絕緣層122與第二子絕緣層112可設有接觸窗115,而畫素電極PE延伸至彩色濾光層121的開孔121b內並透過接觸窗115與主動元件T的汲極D電性連接。The
進一步而言,絕緣層110與有機層120分別具有重疊於資料線DL的第一開口110a與第二開口120a。遮光圖案130設置於第一開口110a與第二開口120a內,並覆蓋資料線DL的上表面DLa、下表面DLb以及側面DLc,其中上表面DLa相對於下表面DLb,且側面DLc連接於上表面DLa與下表面DLb之間。從另一觀點而言,遮光圖案130具有位於第一開口110a的第一部分131以及位於第二開口120a並凸伸出有機層120的第二部分132。遮光圖案130的第一部分131與第二部分132在垂直於基板101的法線方向上分別具有第一寬度W1與第二寬度W2,且第一部分131的第一寬度W1大於第二部分132的第二寬度W2。Furthermore, the insulating
值得一提的是,藉由第一部分131與資料線DL的配置關係(例如:在垂直於基板101的法線方向上,第一部分131的寬度大於資料線DL的寬度),可確保遮光圖案130的遮光效果(例如:在基板101的法線方向上,位於畫素電極PE與資料線DL之重疊區域的多個液晶分子因第二部分132位於有機層120表面上的構形影響而產生的排列不良所造成的漏光)。也因此,可有效縮減遮光圖案130的第二部分132的第二寬度W2,有助於增加畫素電極PE的可佈局空間,進而提升畫素PX的開口率(Aperture Ratio,AR)。It is worth mentioning that the configuration relationship between the
以下將針對遮光圖案130的製造流程進行示範性地說明。首先,請參照圖2A及圖2B,在形成有機絕緣材料層122M後,進行一蝕刻步驟,移除有機絕緣材料層122M重疊於資料線DL的一部分以形成畫素陣列基板10的有機絕緣層122,且有機絕緣層122設有第二開口120a。在本實施例中,有機層120可以是彩色濾光層121與有機絕緣層122的堆疊結構。然而,本發明不限於此,根據其他實施例,有機層也可以僅是彩色濾光層121(亦即,有機層可不包含有機絕緣層122)。The manufacturing process of the
在本實施例中,有機絕緣層122的材料可為高分子聚合物(polymer)、或其它合適的材料,其中高分子聚合物包括壓克力樹脂(acrylic resin)、感光樹脂(photosensitive resin)、聚醯亞胺(polyimide)、或以上述材料為主要成分的複合材料、或其它合適的材料、或上述之組合。另一方面,彩色濾光層121可具有多個彩色濾光圖案,且這些彩色濾光圖案彼此分離開來地沿方向X排列於基板101上(如圖1所示)。換句話說,彩色濾光層121在任兩相鄰的彩色濾光圖案(例如第一彩色濾光圖案1211與第二彩色濾光圖案1212)之間具有一開槽121a,且此開槽121a在基板101的法線方向上重疊於資料線DL與第二開口120a。In this embodiment, the material of the organic insulating
請參照圖2B及圖2C,在形成有機絕緣層122後,進行另一蝕刻步驟,移除絕緣層110在基板101的法線方向上重疊於資料線DL的部分以形成絕緣層110的第一開口110a。在本實施例中,絕緣層110的第一開口110a可暴露出資料線DL的上表面DLa、下表面DLb以及側面DLc,但本發明不以此為限。2B and 2C, after the organic insulating
舉例而言,此處的蝕刻步驟可以是乾式蝕刻(dry etching)製程,例如:利用反應性的氣體(蝕刻氣體)或離子、自由基對絕緣層110被第二開口120a所暴露出的部分進行蝕刻,且此處的蝕刻氣體對絕緣層110的材料與對有機層120的材料的蝕刻選擇比較高。換言之,在絕緣層110的蝕刻過程中,有機層120較不容易受蝕刻氣體所蝕刻。然而,本發明不限於此,根據其他實施例,絕緣層110的蝕刻步驟也可以濕式(wet etching)蝕刻的方式進行。For example, the etching step here may be a dry etching process, such as: using a reactive gas (etching gas) or ions or radicals to perform the portion of the insulating
在絕緣層110的蝕刻過程中,由於蝕刻氣體係透過有機層120的第二開口120a與絕緣層110接觸並產生蝕刻反應。因此,於絕緣層110中所蝕刻出的第一開口110a係連通於有機層120的第二開口120a。特別一提的是,此處絕緣層110的第一開口110a所占區域於基板101上的垂直投影面積大於有機層120的第二開口120a所占區域於基板101上的垂直投影面積。During the etching process of the insulating
請參照圖2D,在絕緣層110的蝕刻步驟完成後,於有機層120上形成一遮光材料層130M,且此遮光材料層130M填入絕緣層110的第一開口110a與有機層120的第二開口120a。具體而言,有機層120具有定義第一開口110a的底面120s2以及定義第二開口120a並連接於底面120s2的側壁120s1,而遮光材料層130M在填入第一開口110a與第二開口120a後,覆蓋有機層120的側壁120s1與底面120s2以及資料線DL的上表面DLa、下表面DLb與側面DLc。在本實施例中,遮光材料層130M的材質可包括黑色樹脂材料。2D, after the etching step of the insulating
接著,對遮光材料層130M進行一微影蝕刻製程,以形成遮光圖案130,如圖2E所示。舉例而言,在形成遮光圖案130的步驟中,還可同時形成重疊設置於主動元件T的間隙物135。亦即,遮光圖案130與間隙物135可屬於同一膜層。特別說明的是,此處的微影蝕刻製程可選擇性地使用半色調(half-tone)遮罩進行曝光,其中半色調區重疊於資料線DL,且半色調區的寬度略小於資料線DL的寬度,但本發明不以此為限。於此,便完成本實施例的遮光圖案130。Next, a photolithographic etching process is performed on the light-shielding
需說明的是,本發明並不以圖2A至圖2E揭示內容而加以限制遮光圖案130的製造方式。本發明所屬技術領域中具有通常知識者應可理解的是,本實施例的遮光圖案130也可透過較為繁瑣的製造流程來形成。例如:在形成絕緣層110後,先進行遮光圖案130之第一部分131的製作,且此第一部分131貫穿絕緣層110並覆蓋資料線DL的下表面DLb;接著,再形成具有第二開口120a的有機層120,並於第二開口120a內形成遮光圖案130的第二部分132,且彼此連接的第一部分131與第二部分132的材質可相同。然而,本發明不限於此,在其他實施例中,遮光圖案的第一部分的材質也可不同於第二部分的材質。It should be noted that the present invention does not limit the manufacturing method of the
在本實施例中,畫素陣列基板10包括基板101、資料線DL、畫素PX、絕緣層110、有機層120以及遮光圖案130。資料線DL與畫素PX設置於基板101上。畫素PX包括彼此電性連接的主動元件T以及畫素電極PE,且主動元件T電性連接資料線DL。絕緣層110具有重疊於資料線DL的第一開口110a。資料線DL具有定義第一開口110a的上表面DLa。有機層120設置於絕緣層110上,且具有連通於第一開口110a的第二開口120a、定義第一開口110a的底面120s2以及定義第二開口120a的側壁120s1。側壁120s1與底面120s2相連接。遮光圖案130覆蓋資料線DL的上表面DLa以及有機層120的側壁120s1與底面120s2,且具有位於第一開口110a的第一部分131以及位於第二開口120a並凸伸出有機層120的第二部分132。第一部分131與第二部分132分別具有第一寬度W1與第二寬度W2,且第一寬度W1大於第二寬度W2。In this embodiment, the
特別說明的是,在本實施例中,有機層120的第二開口120a所占區域在基板101的法線方向上可完全重疊於資料線DL,且第一開口110a相對於資料線DL呈現鏡像對稱,但本發明不以此為限。在其他實施例中,有機層120的第二開口120a所占區域也可部分重疊於資料線DL的一側,且遮光圖案的第一部分僅覆蓋資料線DL的一側面DLc。需說明的是,本發明並不以圖式揭示內容為限制,根據其他實施例,遮光圖案的第一部分(或者是絕緣層的第一開口)也可重疊於掃描線SL或共用線CL。In particular, in this embodiment, the area occupied by the
舉例而言,如圖1所示,定義出一畫素PX之開口區的多條訊號線(例如兩條資料線DL、一條掃描線SL以及一條共用線CL)與此畫素PX之畫素電極PE相鄰或相重疊的區域都可成為遮光圖案的設置處。並且透過遮光圖案位於第二開口的第二部分的寬度小於遮光圖案位於第一開口的第一部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素PX的開口率(Aperture Ratio,AR)。For example, as shown in FIG. 1, a plurality of signal lines (such as two data lines DL, one scan line SL, and a common line CL) defining the opening area of a pixel PX and the pixels of this pixel PX The area where the electrodes PE are adjacent or overlapped can be the place where the light shielding pattern is set. And the width of the second part of the light-shielding pattern in the second opening is smaller than the width of the first part of the light-shielding pattern in the first opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel PX (Aperture Ratio, AR).
進一步而言,畫素陣列基板10可應用於顯示面板1,如圖2F所示。顯示面板1更包括基板201、驅動電極210、顯示介質層DM。基板201與畫素陣列基板10對向設置,且驅動電極210設置於基板201朝向畫素陣列基板10的一側表面上。顯示介質層DM夾設於驅動電極210與畫素陣列基板10之間。在本實施例中,顯示介質層DM可包含多個液晶分子。亦即,顯示面板1例如是液晶顯示面板(liquid crystal display panel,LCD Panel)。舉例而言,在本實施例中,驅動電極210例如是共用電極(common electrode),且具有一接地電位。當畫素電極PE被致能而具有一高電位時,驅動電極210與畫素電極PE之間的電位差所形成的電場可驅使這些液晶分子轉動。藉此,可控制背光(未繪示)在通過畫素PX後的光強度,以達到顯示畫面的效果。特別一提的是,夾設於基板201與畫素陣列基板10之間的間隙物135,可用以將顯示介質層DM在基板101的法線方向上的厚度控制在一設定值。Furthermore, the
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。特別說明的是,以下實施例的畫素陣列基板均可用以取代上述顯示面板1中的畫素陣列基板10。Other embodiments will be listed below to describe the disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and will not be repeated below. In particular, the pixel array substrates of the following embodiments can be used to replace the
圖3是本發明的第二實施例的畫素陣列基板的剖視圖。請參照圖3,本實施例的畫素陣列基板11與圖2E的畫素陣列基板10的主要差異在於:遮光圖案的構型不同。在本實施例中,遮光圖案130A(或者是第二部分132A)與間隙物135分別具有頂面130As與頂面135s。遮光圖案130A的頂面130As與基板101的上表面101s之間具有第一高度H1,間隙物135的頂面135s與基板101的上表面101s之間具有第二高度H2,且第一高度H1小於第二高度H2。3 is a cross-sectional view of the pixel array substrate of the second embodiment of the invention. Referring to FIG. 3, the main difference between the
值得一提的是,在形成遮光材料層時,由於絕緣層110與有機層120分別設有第一開口110a與第二開口120a,遮光材料層重疊於第二開口120a的部分膜面可凹陷於其他部分的膜面。藉此,在遮光材料層的圖案化過程中,無需使用半色調(half-tone)遮罩進行曝光,即可形成遮光圖案130A與間隙物135之間的高度差。更具體地說,在本實施例中,遮光圖案130A還可具有輔助間隙物的功能。亦即,透過遮光圖案130A與間隙物135之間的高度差,可提升顯示介質層的厚度均勻性,並增加顯示面板的製程容許度(process latitude),有助於提升顯示面板的生產良率。It is worth mentioning that when the light-shielding material layer is formed, since the insulating
圖4是本發明的第三實施例的畫素陣列基板的剖視圖。請參照圖4,本實施例的畫素陣列基板12與圖2E的畫素陣列基板10的主要差異在於:遮光圖案的構型不同。在本實施例中,第一開口110a-1僅貫穿第二子絕緣層112,且遮光圖案130B的第一部分131僅覆蓋資料線DL的上表面DLa。換句話說,遮光圖案130B的第一部分131A的第一寬度W1’小於畫素陣列基板10的遮光圖案130的第一部分131的第一寬度W1,但仍大於第二部分132的第二寬度W2。據此,在不損及遮光圖案130B的遮光效果的前提下,可有效縮減遮光圖案130B的第二部分132的第二寬度W2,有助於增加畫素電極PE的可佈局空間,進而提升畫素PX的開口率(Aperture Ratio,AR)。4 is a cross-sectional view of the pixel array substrate of the third embodiment of the present invention. Referring to FIG. 4, the main difference between the
圖5是本發明的第四實施例的畫素陣列基板的俯視圖。圖6是圖5的畫素陣列基板的剖視圖。請參照圖5及圖6,本實施例的畫素陣列基板20與圖1的畫素陣列基板10的主要差異在於:訊號線與畫素之間的配置關係不同以及遮光圖案的第一部分的構型不同。在本實施例中,在方向X上排列且相鄰的兩畫素(例如第一畫素PX1與第二畫素PX2)之間可設有兩訊號線,分別為第一資料線DL1與第二資料線DL2,其中第一資料線DL1與第二資料線DL2相鄰且平行排列於基板101上。第一畫素PX1與第二畫素PX2分別電性連接於第一資料線DL1與第二資料線DL2。Fig. 5 is a top view of a pixel array substrate according to a fourth embodiment of the present invention. FIG. 6 is a cross-sectional view of the pixel array substrate of FIG. 5. 5 and 6, the main difference between the
在本實施例中,遮光圖案130C的第一部份131B同時覆蓋第一資料線DL1的上表面DL1a、下表面DL1b與側面DL1c以及第二資料線DL2的上表面DL2a、下表面DL2b與側面DL2c。也就是說,遮光圖案130C係設置在第一資料線DL1與第二資料線DL2之間的區域。透過第一部分131B覆蓋部分的第一資料線DL1、部分的第二資料線DL2以及這兩條資料線之間的區域,可阻擋背光自這兩條資料線之間的區域出射而產生漏光,並且藉由縮短第二部分132在垂直基板101法線方向上的寬度,以增加畫素電極的可佈局空間,進而提升畫素的開口率(Aperture Ratio,AR)。In this embodiment, the
另一方面,本實施例的各畫素的畫素電極可分為第一子部PEa與第二子部PEb,而主動元件T’可具有兩個汲極,分別為汲極D1與汲極D2,其中畫素電極的第一子部PEa與第二子部PEb分別電性連接主動元件T’的汲極D1與汲極D2,但本發明不以此為限。On the other hand, the pixel electrode of each pixel of this embodiment can be divided into a first sub-part PEa and a second sub-part PEb, and the active device T'can have two drains, namely a drain D1 and a drain D2, where the first sub-part PEa and the second sub-part PEb of the pixel electrode are electrically connected to the drain D1 and the drain D2 of the active device T′, but the invention is not limited thereto.
圖7是本發明的第五實施例的畫素陣列基板的剖視圖。請參照圖7,本實施例的畫素陣列基板21與圖6的畫素陣列基板20的主要差異在於:有機層的組成不同。在本實施例中,有機層120僅包括彩色濾光層121,且間隙物135(或畫素電極)與彩色濾光層121之間設有一無機絕緣層140。更具體地說,彩色濾光層121的開槽121a可定義出有機層120A的第二開口120a-1,且遮光圖案130D的第二部分132B在垂直基板101的法線方向上的寬度由第二開口120a-1內朝遮光圖案130D的頂面130Ds逐漸縮小。特別一提的是,由於第二開口120a-1位於絕緣層110一側的底部口徑較大,在絕緣層110的蝕刻過程中,可縮短反應時間,有助於提升蝕刻效率。在本實施例中,無機絕緣層140的材質可包括氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述至少二種材料的堆疊層。FIG. 7 is a cross-sectional view of the pixel array substrate of the fifth embodiment of the present invention. Please refer to FIG. 7, the main difference between the
綜上所述,在本發明一實施例的畫素陣列基板中,絕緣層與有機層分別具有相連通的第一開口與第二開口,且電性連接於畫素之主動元件的第一訊號線與這兩開口相重疊。透過遮光圖案位於第一開口的第一部分的寬度大於遮光圖案位於第二開口的第二部分的寬度,可增加畫素之畫素電極的可佈局空間,有助於提升畫素的開口率(Aperture Ratio,AR)。To sum up, in the pixel array substrate of an embodiment of the present invention, the insulating layer and the organic layer respectively have a first opening and a second opening that are connected to each other, and are electrically connected to the first signal of the active element of the pixel The line overlaps the two openings. The width of the first part of the light-shielding pattern in the first opening is greater than the width of the second part of the light-shielding pattern in the second opening, which can increase the layout space of the pixel electrode of the pixel and help increase the aperture ratio of the pixel (Aperture Ratio, AR).
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.
1:顯示面板1: display panel
10、11、12、20、21:畫素陣列基板10, 11, 12, 20, 21: pixel array substrate
101、201:基板101, 201: substrate
101s:上表面101s: upper surface
110:絕緣層110: insulating layer
110a、110a-1:第一開口110a, 110a-1: first opening
111:第一子絕緣層111: first sub-insulating layer
112:第二子絕緣層112: second sub-insulation layer
115:接觸窗115: contact window
120:有機層120: organic layer
120a、120a-1:第二開口120a, 120a-1: second opening
120s1:側壁120s1: sidewall
120s2:底面120s2: bottom surface
121:彩色濾光層121: Color filter layer
121a:開槽121a: Slotting
121b:開孔121b: opening
1211、1212:彩色濾光圖案1211, 1212: color filter pattern
122:有機絕緣層122: organic insulating layer
122M:有機絕緣材料層122M: organic insulating material layer
130、130A、130B、130C、130D:遮光圖案130, 130A, 130B, 130C, 130D: shading pattern
130As、130Ds、135s:頂面130As, 130Ds, 135s: top surface
130M:遮光材料層130M: shading material layer
131、131A、131B:第一部分131, 131A, 131B: Part One
132、132A、132B:第二部分132, 132A, 132B: Part Two
135:間隙物135: Interstitial Object
210:驅動電極210: drive electrode
CL:共用線CL: Common line
D、D1、D2:汲極D, D1, D2: drain
DL、DL1、DL2:資料線DL, DL1, DL2: data line
DLa、DL1a、DL2a:上表面DLa, DL1a, DL2a: upper surface
DLb、DL1b、DL2b:下表面DLb, DL1b, DL2b: bottom surface
DLc、DL1c、DL2c:側面DLc, DL1c, DL2c: side
DM:顯示介質層DM: display medium layer
G:閘極G: Gate
H1:第一高度H1: first height
H2:第二高度H2: second height
OC:歐姆接觸層OC: Ohmic contact layer
PE:畫素電極PE: pixel electrode
PEa:第一子部PEa: First subsection
PEb:第二子部PEb: Second subsection
PX、PX1、PX2:畫素PX, PX1, PX2: pixels
S:源極S: source
SC:半導體圖案SC: Semiconductor pattern
SL:掃描線SL: scan line
T、T’:主動元件T, T’: Active component
W1、W’:第一寬度W1, W’: first width
W2:第二寬度W2: second width
X、Y:方向X, Y: direction
A-A’、B-B’、C-C’:剖線A-A’, B-B’, C-C’: cut line
圖1是本發明的第一實施例的畫素陣列基板的俯視圖。 圖2A至圖2E是圖1的畫素陣列基板的製造流程的剖視圖。 圖2F是採用圖2E的畫素陣列基板的顯示面板的剖視圖。 圖3是本發明的第二實施例的畫素陣列基板的剖視圖。 圖4是本發明的第三實施例的畫素陣列基板的剖視圖。 圖5是本發明的第四實施例的畫素陣列基板的俯視圖。 圖6是圖5的畫素陣列基板的剖視圖。 圖7是本發明的第五實施例的畫素陣列基板的剖視圖。 FIG. 1 is a top view of a pixel array substrate according to a first embodiment of the invention. 2A to 2E are cross-sectional views of the manufacturing process of the pixel array substrate of FIG. 1. 2F is a cross-sectional view of a display panel using the pixel array substrate of FIG. 2E. 3 is a cross-sectional view of the pixel array substrate of the second embodiment of the invention. 4 is a cross-sectional view of the pixel array substrate of the third embodiment of the present invention. Fig. 5 is a top view of a pixel array substrate according to a fourth embodiment of the present invention. FIG. 6 is a cross-sectional view of the pixel array substrate of FIG. 5. FIG. 7 is a cross-sectional view of the pixel array substrate of the fifth embodiment of the present invention.
10:畫素陣列基板 10: Pixel array substrate
101:基板 101: substrate
101s:上表面 101s: upper surface
110:絕緣層 110: insulating layer
110a:第一開口 110a: first opening
111:第一子絕緣層 111: first sub-insulating layer
112:第二子絕緣層 112: second sub-insulation layer
120:有機層 120: organic layer
120a:第二開口 120a: second opening
120s1:側壁 120s1: sidewall
120s2:底面 120s2: bottom surface
121:彩色濾光層 121: Color filter layer
1211、1212:彩色濾光圖案 1211, 1212: color filter pattern
122:有機絕緣層 122: organic insulating layer
130:遮光圖案 130: shading pattern
131:第一部分 131: Part One
132:第二部分 132: Part Two
135:間隙物 135: Interstitial Object
CL:共用線 CL: Common line
D:汲極 D: Dip pole
DL:資料線 DL: Data line
DLa:上表面 DLa: upper surface
DLb:下表面 DLb: bottom surface
DLc:側面 DLc: side
G:閘極 G: Gate
OC:歐姆接觸層 OC: Ohmic contact layer
PE:畫素電極 PE: pixel electrode
PX:畫素 PX: pixel
S:源極 S: source
SC:半導體圖案 SC: Semiconductor pattern
SL:掃描線 SL: scan line
T:主動元件 T: Active component
W1:第一寬度 W1: first width
W2:第二寬度 W2: second width
A-A’:剖線 A-A’: Cut line
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TWI638209B (en) * | 2015-05-05 | 2018-10-11 | 友達光電股份有限公司 | Display panel |
TWI680603B (en) * | 2018-11-12 | 2019-12-21 | 友達光電股份有限公司 | Pixel array substrate |
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