[go: up one dir, main page]

TWI698515B - Nano composite fluorescent powder, its preparation method and luminescent device - Google Patents

Nano composite fluorescent powder, its preparation method and luminescent device Download PDF

Info

Publication number
TWI698515B
TWI698515B TW107145705A TW107145705A TWI698515B TW I698515 B TWI698515 B TW I698515B TW 107145705 A TW107145705 A TW 107145705A TW 107145705 A TW107145705 A TW 107145705A TW I698515 B TWI698515 B TW I698515B
Authority
TW
Taiwan
Prior art keywords
phosphor
nanocomposite
carrier
light
chip
Prior art date
Application number
TW107145705A
Other languages
Chinese (zh)
Other versions
TW202009292A (en
Inventor
楊佳偉
黃文澤
劉如熹
呂侊懋
康桀侑
林治民
鄭巧翎
包真
Original Assignee
億光電子工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 億光電子工業股份有限公司 filed Critical 億光電子工業股份有限公司
Publication of TW202009292A publication Critical patent/TW202009292A/en
Application granted granted Critical
Publication of TWI698515B publication Critical patent/TWI698515B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
    • C09K11/681Chalcogenides
    • C09K11/682Chalcogenides with zinc or cadmium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

本發明提供一種奈米複合螢光粉,所述奈米複合螢光粉包括載體及負載於所述載體上的紅外螢光粉,其中所述載體為氧化物,所述紅外螢光粉的化學通式為ZnGa2-x-yO4:xCr3+,yR,其中x和y均為莫耳分數,且0<x<0.4,0

Figure 107145705-A0101-11-0001-14
y<0.4,R選自Sn4+,Ti3+,V2+,Mn3+,Fe2+,Co3+,Ni3+,Nb5+,Mo5+,Tc5+,Ru4+,Rh4+,Pd4+,Sb5+,Ta5+,W5+,Re4+,Os4+,Ir4+,Pt4+中的一種或多種。該奈米複合螢光粉具有優異的分散性、發光效率高且封裝性好,其粒徑尺寸可適配於micro/min-LED等發光裝置上,在可見光或紫外光激發下可獲得紅外光,有望應用於微小型檢測裝置,虹膜/面部臉部檢測、醫療檢測或氣體檢測裝置等。 The present invention provides a nano-composite phosphor. The nano-composite phosphor includes a carrier and an infrared phosphor loaded on the carrier, wherein the carrier is an oxide, and the chemical composition of the infrared phosphor The general formula is ZnGa 2-xy O 4 :xCr 3+ ,yR, where x and y are mole fractions, and 0<x<0.4, 0
Figure 107145705-A0101-11-0001-14
y<0.4, R is selected from Sn 4+ ,Ti 3+ ,V 2+ ,Mn 3+ ,Fe 2+ ,Co 3+ ,Ni 3+ ,Nb 5+ ,Mo 5+ ,Tc 5+ ,Ru 4+ One or more of, Rh 4+ , Pd 4+ , Sb 5+ , Ta 5+ , W 5+ , Re 4+ , Os 4+ , Ir 4+ , and Pt 4+ . The nano-composite phosphor has excellent dispersibility, high luminous efficiency and good encapsulation. Its particle size can be adapted to light-emitting devices such as micro/min-LED, and infrared light can be obtained under the excitation of visible light or ultraviolet light. , It is expected to be used in micro detection devices, iris/face detection, medical detection or gas detection devices, etc.

Description

奈米複合螢光粉及其製備方法和發光裝置 Nano composite fluorescent powder and its preparation method and light emitting device

本發明屬於半導體技術領域,具體涉及一種奈米複合螢光粉及其製備方法和發光裝置。 The invention belongs to the technical field of semiconductors, and specifically relates to a nanocomposite phosphor, a preparation method thereof, and a light emitting device.

隨著半導體技術的不斷發展,mirco-LED(微型發光二極體)和mini-LED(次毫米發光二極體)正推動著LED顯示技術的又一次革命。Micro-LED技術是將LED(發光二極體)背光源進行薄膜化、微小化、陣列化,使得LED單元尺寸小於100微米,其既繼承了無機LED的高效率、高亮度、高可靠度及反應時間快等特點,又具有自發光無需背光源的特性,體積小、輕薄,還能輕易實現節能的效果。Mini-LED是指晶粒尺寸約在100微米到200微米的LED,其採用局部調光設計,擁有更好的演色性,能帶給液晶面板更為精細的HDR分區,且厚度也趨近OLED,可省電達80%,故以省電、薄型化、HDR、異型顯示器等背光源應用為訴求,適合應用於手機、電視、車用面板及電競筆記型電腦等產品上。 With the continuous development of semiconductor technology, mirco-LED (miniature light-emitting diode) and mini-LED (sub-millimeter light-emitting diode) are driving another revolution in LED display technology. Micro-LED technology is to thin, miniaturize, and array the LED (light emitting diode) backlight, making the size of the LED unit less than 100 microns, which inherits the high efficiency, high brightness, high reliability and reliability of inorganic LEDs. It has the characteristics of fast response time, self-illumination without backlight, small size, light weight, and energy saving effect. Mini-LED refers to an LED with a grain size of about 100 microns to 200 microns. It adopts a local dimming design and has better color rendering. It can bring more fine HDR partitions to the LCD panel, and the thickness is also close to OLED , It can save power up to 80%, so it is demanded for backlight applications such as power saving, thinner, HDR, and special-shaped displays. It is suitable for applications such as mobile phones, TVs, car panels, and gaming laptops.

相較於量子點LED(QLED,quantum dot LED),使用螢光粉作為發光中心的LED(pc-LED)性能更穩定。然而,隨著mirco-LED和mini-LED的發展,晶片尺寸不斷微縮,使得pc-LED材料尺寸也面臨瓶頸。 通常,光通量(luminous flux)會隨著螢光粉層厚度或螢光粉濃度的提高而增加,然而大多數螢光粉都是微米級的且不均勻,螢光粉層過厚也會產生高的散射效應和低分散性等問題。 Compared with quantum dot LEDs (QLEDs), LEDs (pc-LEDs) that use phosphors as the light-emitting center have more stable performance. However, with the development of mirco-LED and mini-LED, the chip size continues to shrink, making pc-LED material size also face a bottleneck. Generally, the luminous flux will increase with the increase of the thickness of the phosphor layer or the concentration of the phosphor. However, most phosphors are micron-sized and uneven, and too thick a phosphor layer will also produce high The scattering effect and low dispersion problems.

故,急需一種新的螢光粉及其製備方法,以應用於mirco/mini-LED等發光裝置中,並解決現有技術中存在的種種問題。 Therefore, there is an urgent need for a new phosphor and a preparation method thereof to be applied to light-emitting devices such as mirco/mini-LED and to solve various problems existing in the prior art.

需注意的是,前述背景技術部分公開的資訊僅用於加強對本發明的背景理解,因此它可以包括不構成對本領域普通技術人員已知的現有技術的資訊。 It should be noted that the information disclosed in the foregoing background section is only used to enhance the background understanding of the present invention, so it may include information that does not constitute the prior art known to those of ordinary skill in the art.

本發明的目的是提供一種奈米複合螢光粉及其製備方法,該奈米複合螢光粉可應用於mirco/mini-LED、micro/min-LD等發光裝置中,用於解決現有螢光粉發光效率低、尺寸受限、分散性差等問題。 The purpose of the present invention is to provide a nano-composite phosphor and a preparation method thereof. The nano-composite phosphor can be used in light-emitting devices such as mirco/mini-LED, micro/min-LD, etc., to solve the existing fluorescent Powder luminous efficiency is low, the size is limited, and the dispersion is poor.

為了實現上述目的,本發明採用如下技術方案:本發明提供一種奈米複合螢光粉,所述奈米複合螢光粉包括載體及負載於所述載體上的紅外螢光粉,其中所述載體為氧化物,所述紅外螢光粉的化學通式為ZnGa2-x-yO4:xCr3+,yR,其中x和y均為莫耳分數,且0<x<0.4,0

Figure 107145705-A0101-12-0002-15
y<0.4,R選自Sn4+,Ti3+,V2+,Mn3+,Fe2+,Co3+,Ni3+,Nb5+,Mo5+,Tc5+,Ru4+,Rh4+,Pd4+,Sb5+,Ta5+,W5+,Re4+,Os4+,Ir4+,Pt4+中的一種或多種。 In order to achieve the above object, the present invention adopts the following technical solutions: the present invention provides a nanocomposite phosphor, the nanocomposite phosphor comprising a carrier and an infrared phosphor supported on the carrier, wherein the carrier It is an oxide, and the general chemical formula of the infrared phosphor is ZnGa 2-xy O 4 : xCr 3+ , yR, where x and y are mole fractions, and 0<x<0.4, 0
Figure 107145705-A0101-12-0002-15
y<0.4, R is selected from Sn 4+ ,Ti 3+ ,V 2+ ,Mn 3+ ,Fe 2+ ,Co 3+ ,Ni 3+ ,Nb 5+ ,Mo 5+ ,Tc 5+ ,Ru 4+ One or more of, Rh 4+ , Pd 4+ , Sb 5+ , Ta 5+ , W 5+ , Re 4+ , Os 4+ , Ir 4+ , and Pt 4+ .

根據本發明的一個實施方式,所述奈米複合螢光粉的粒徑小於200nm。 According to an embodiment of the present invention, the particle size of the nanocomposite phosphor is less than 200 nm.

根據本發明的一個實施方式,所述奈米複合螢光粉的發光波 長為600nm~2000nm,所述奈米複合螢光粉的激發波長為250~600nm。 According to an embodiment of the present invention, the luminescence wave of the nanocomposite phosphor The length is 600nm~2000nm, and the excitation wavelength of the nanocomposite phosphor is 250~600nm.

根據本發明的一個實施方式,所述載體具有介孔結構,所述氧化物選自二氧化矽、二氧化鈦、氧化矽、氧化鈦和氧化鋅中的一種或多種。 According to an embodiment of the present invention, the carrier has a mesoporous structure, and the oxide is selected from one or more of silicon dioxide, titanium dioxide, silicon oxide, titanium oxide, and zinc oxide.

本發明還提供一種上述奈米複合螢光粉的製備方法,包括:按化學通式ZnGa2-x-yO4:xCr3+,yR中各元素的莫耳比秤取含有Zn、Ga、Cr、R元素的化合物,分別溶解形成溶液後混合,形成前驅體溶液;將載體置於所述前驅體溶液中混合,所述混合後的溶液經加熱烘烤形成粉體;將所述粉體進行研磨後,鍛燒處理6~20h,即得所述奈米複合螢光粉。 The present invention also provides a method for preparing the above-mentioned nanocomposite phosphor, which includes: weighing the molar ratio of each element in ZnGa 2-xy O 4 : xCr 3+ , yR containing Zn, Ga, Cr, Compounds of the R element are respectively dissolved to form a solution and then mixed to form a precursor solution; the carrier is placed in the precursor solution and mixed, and the mixed solution is heated and baked to form a powder; the powder is ground Afterwards, calcining for 6-20 hours to obtain the nanocomposite phosphor.

根據本發明的一個實施方式,所述鍛燒處理包括:將所述研磨後的粉體以2℃/min~5℃/min的速率升溫至200℃~700℃,持續鍛燒1h~10h;再以2℃/min~5℃/min的速率升溫至500℃~1200℃,持續鍛燒1h~10h。 According to an embodiment of the present invention, the calcining treatment includes: heating the ground powder to 200°C~700°C at a rate of 2°C/min~5°C/min, and continue calcining for 1h~10h; Then increase the temperature to 500°C~1200°C at a rate of 2°C/min~5°C/min, and continue calcination for 1h~10h.

根據本發明的一個實施方式,所述載體與所述前驅體溶液的固液比mg:ml為100:0.5~100:20;所述前驅體溶液的莫耳濃度為0.1M~1.5M。 According to an embodiment of the present invention, the solid-to-liquid ratio mg:ml of the carrier to the precursor solution is 100:0.5-100:20; the molar concentration of the precursor solution is 0.1M-1.5M.

本發明還提供一種發光裝置,包括:激發光源和位於所述激發光源上的封裝層,所述封裝層的材料包括上述奈米複合螢光粉和封裝膠體。 The present invention also provides a light-emitting device, comprising: an excitation light source and an encapsulation layer on the excitation light source, and the material of the encapsulation layer includes the above-mentioned nanocomposite phosphor and an encapsulation colloid.

根據本發明的一個實施方式,以所述封裝層的總質量計,所述奈米複合螢光粉的質量分數為50%~100%。 According to an embodiment of the present invention, based on the total mass of the encapsulation layer, the mass fraction of the nanocomposite phosphor is 50%-100%.

根據本發明的一個實施方式,隨著所述封裝層的厚度變化,所述奈米複合螢光粉的質量分數呈梯度變化或連續變化,所述奈米複合螢光粉的平均質量分數為50%~100%。 According to an embodiment of the present invention, as the thickness of the encapsulation layer changes, the mass fraction of the nanocomposite phosphor changes gradually or continuously, and the average mass fraction of the nanocomposite phosphor is 50 %~100%.

根據本發明的一個實施方式,所述激發光源為微型發光二極體晶片(micro-LED chip)、微型鐳射二極體晶片(micro-LD chip)、次毫米發光二極體晶片(mini-LED chip)或次毫米鐳射二極體晶片(mini-LD chip),所述晶片為水平式晶片、垂直式晶片或覆晶式晶片。 According to an embodiment of the present invention, the excitation light source is a micro-LED chip, a micro-LD chip, or a sub-millimeter light-emitting diode chip (mini-LED). chip) or sub-millimeter laser diode chip (mini-LD chip), the chip is a horizontal chip, a vertical chip or a flip-chip chip.

本發明的有益效果在於:本發明提供的奈米複合螢光粉,使用具有介孔結構的氧化物載體負載紅外螢光粉,使其具有奈米尺寸的同時具有良好的分散性;該紅外螢光粉以Cr或其混合物(如Sn或Ni等)作為發光中心,通過調整發光中心的濃度可提高螢光發射強度;此外,傳統螢光粉塊材(bulk phosphors)在微型晶片上分散不均勻,封裝效果差,而本發明的螢光粉應用於micro/min-LED、micro/min-LD等發光裝置上仍具有良好的封裝密度(packing density)和發光特性。 The beneficial effects of the present invention are: the nanocomposite phosphor provided by the present invention uses an oxide carrier with a mesoporous structure to support the infrared phosphor, so that it has a nanometer size and has good dispersibility; the infrared phosphor The light powder uses Cr or its mixture (such as Sn or Ni) as the light emitting center, and the intensity of fluorescent light emission can be increased by adjusting the concentration of the light emitting center; in addition, traditional bulk phosphors are unevenly dispersed on microchips , The packaging effect is poor, and the phosphor of the present invention applied to micro/min-LED, micro/min-LD and other light-emitting devices still has good packaging density and light-emitting characteristics.

總之,本發明提供的奈米複合螢光粉具有優異的分散性、發光效率高且封裝性好,其粒徑尺寸可適配於micro/min-LED、micro/min-LD等發光裝置上,在可見光或紫外光激發下可獲得紅外光,有望應用於微小型檢測裝置,虹膜/面部臉部檢測、醫療檢測或氣體檢測裝置等。 In short, the nanocomposite phosphor provided by the present invention has excellent dispersibility, high luminous efficiency and good encapsulation, and its particle size can be adapted to light-emitting devices such as micro/min-LED and micro/min-LD. Infrared light can be obtained under the excitation of visible light or ultraviolet light, which is expected to be applied to micro-small detection devices, iris/face detection, medical detection or gas detection devices, etc.

第1圖為實施例1的介孔奈米二氧化矽之高解析電子顯微鏡圖;第2圖為實施例1的介孔奈米二氧化矽之傅立葉轉換紅外線光譜分析圖;第3圖為實施例1的奈米複合螢光粉之X射線衍射譜圖;第4圖為實施例1的奈米複合螢光粉之高解析電子顯微鏡圖;第5圖為實施例1的奈米複合螢光粉之光致發光光譜圖;第6圖為實施例2至7的奈米複合螢光粉之光致發光相對強度圖;第7圖為實施例8至11的奈米複合螢光粉之光致發光相對強度圖。 Figure 1 is a high-resolution electron microscope image of the mesoporous nanosilica of Example 1; Figure 2 is a Fourier transform infrared spectroscopy analysis of the mesoporous nanosilica of Example 1; Figure 3 is an implementation The X-ray diffraction spectrum of the nanocomposite phosphor of Example 1; Figure 4 is a high-resolution electron microscope image of the nanocomposite phosphor of Example 1; Figure 5 is the nanocomposite phosphor of Example 1 The photoluminescence spectra of the powder; Figure 6 is the photoluminescence relative intensity diagram of the nanocomposite phosphors of Examples 2 to 7; Figure 7 is the light of the nanocomposite phosphors of Examples 8 to 11 Graph of relative intensity of luminescence.

第8圖為實施例13具有不同奈米複合螢光粉的min-LED發光裝置之光致發光相對強度圖。 Figure 8 is a graph of the relative intensity of photoluminescence of the min-LED light-emitting device with different nano-composite phosphors in Example 13.

體現本公開特徵與優點的典型實施例將在以下的說明中詳細敘述。應理解的是本公開能夠在不同的實施例上具有各種的變化,其皆不脫離本公開的範圍,且其中的說明及圖式在本質上是作說明之用,而非用以限制本公開。 Typical embodiments embodying the features and advantages of the present disclosure will be described in detail in the following description. It should be understood that the present disclosure can have various changes in different embodiments, which do not depart from the scope of the present disclosure, and the descriptions and drawings therein are essentially for illustrative purposes, rather than limiting the present disclosure. .

在本文中所披露的範圍的端點和任何值都不限於該精確的範圍或值,這些範圍或值應當理解為包含接近這些範圍或值的值。對於數值範圍來說,各個範圍的端點值之間、各個範圍的端點值和單獨的點值之間,以及單獨的點值之間可以彼此組合而得到一個或多個新的數值範圍,這些數值範圍應當被視為在本文中具體公開。 The endpoints and any values of the ranges disclosed herein are not limited to the precise range or value, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values can be combined with each other to obtain one or more new numerical ranges. These numerical ranges should be considered as specifically disclosed herein.

本發明的一個方面是提供一種奈米複合螢光粉,所述奈米複 合螢光粉包括載體及負載於所述載體上的紅外螢光粉,其中所述載體為氧化物,所述紅外螢光粉的化學通式為ZnGa2-x-yO4:xCr3+,yR(ZGOCR),其中x和y均為莫耳分數,且0<x<0.4,0

Figure 107145705-A0101-12-0006-16
y<0.4,R選自Sn4+,Ti3+,V2+,Mn3+,Fe2+,Co3+,Ni3+,Nb5+,Mo5+,Tc5+,Ru4+,Rh4+,Pd4+,Sb5+,Ta5+,W5+,Re4+,Os4+,Ir4+,Pt4+中的一種或多種。 One aspect of the present invention is to provide a nano-composite phosphor. The nano-composite phosphor includes a carrier and an infrared phosphor supported on the carrier, wherein the carrier is an oxide, and the infrared phosphor The general chemical formula of light powder is ZnGa 2-xy O 4 : xCr 3+ ,yR(ZGOCR), where x and y are mole fractions, and 0<x<0.4, 0
Figure 107145705-A0101-12-0006-16
y<0.4, R is selected from Sn 4+ ,Ti 3+ ,V 2+ ,Mn 3+ ,Fe 2+ ,Co 3+ ,Ni 3+ ,Nb 5+ ,Mo 5+ ,Tc 5+ ,Ru 4+ One or more of, Rh 4+ , Pd 4+ , Sb 5+ , Ta 5+ , W 5+ , Re 4+ , Os 4+ , Ir 4+ , and Pt 4+ .

在一些實施例中,上述奈米複合螢光粉中的載體具有介孔結構,作為載體的氧化物優選為二氧化矽、二氧化鈦、氧化矽、氧化鈦和氧化鋅等,以介孔奈米二氧化矽(MSNs)為載體為例,作為主體晶格,負載以鉻(Cr)或其混合物(例如錫(Sn)或鎳(Ni)等)為發光中心的紅外螢光粉,使其具有奈米尺寸的同時又具有良好的分散性。 In some embodiments, the carrier in the nanocomposite phosphor has a mesoporous structure, and the oxide as the carrier is preferably silicon dioxide, titanium dioxide, silicon oxide, titanium oxide, zinc oxide, etc. For example, silicon oxide (MSNs) is the carrier. As the main crystal lattice, infrared phosphors with chromium (Cr) or its mixture (such as tin (Sn) or nickel (Ni)) as the emission center are loaded to make it have nano It has good dispersibility at the same time of rice size.

隨著紅外螢光粉中的發光中心濃度提高,即例如,摻雜的Cr3+、Sn4+的濃度提高,可提高螢光發射強度,但濃度過高也會影響螢光發射強度。在一些實施例中,Cr3+的濃度,即所摻入的Cr3+部分取代Ga3+的莫耳數為1%~5%,優選為2%;R離子的濃度為1%~5%。 As the concentration of the emission center in the infrared phosphor increases, that is, for example, the concentration of doped Cr 3+ and Sn 4+ increases, the fluorescence emission intensity can be increased, but too high concentration will also affect the fluorescence emission intensity. In some embodiments, the concentration of Cr 3+ , that is, the number of moles of the added Cr 3+ partially substituted for Ga 3+ is 1%~5%, preferably 2%; the concentration of R ion is 1%~5 %.

在一些實施例中,所述奈米複合螢光粉的粒徑小於200nm。該粒徑尺寸使得其可適配於micro-LED或min-LED等發光裝置中。其中,mini-LED尺寸通常介於100-200μm之間;micro-LED尺寸為100μm以下。 In some embodiments, the particle size of the nanocomposite phosphor is less than 200 nm. The particle size makes it suitable for light-emitting devices such as micro-LED or min-LED. Among them, the mini-LED size is usually between 100-200μm; the micro-LED size is below 100μm.

在一些實施例中,所述奈米複合螢光粉的發光波長為600nm~2000nm,所述奈米複合螢光粉的激發波長為250~600nm。本發明的奈米複合螢光粉可在micro-LED或min-LED發射的可見光或紫外光激發下產生紅外光,進而可應用於小型電子設備上使用,如遙控器、汽車感測器、安全、目視識別、生物醫學圖像等。 In some embodiments, the emission wavelength of the nano-composite phosphor is 600 nm to 2000 nm, and the excitation wavelength of the nano-composite phosphor is 250 to 600 nm. The nanocomposite phosphor of the present invention can generate infrared light under the excitation of visible light or ultraviolet light emitted by micro-LED or min-LED, and can be applied to small electronic devices, such as remote control, car sensor, safety , Visual recognition, biomedical images, etc.

本發明的一個方面還提供上述奈米複合螢光粉的製備方法,包括: One aspect of the present invention also provides a method for preparing the above-mentioned nanocomposite phosphor, including:

S1:按化學通式ZnGa2-x-yO4:xCr3+,yR中各元素的莫耳比秤取含有鋅(Zn)、稼(Ga)、鉻(Cr)、R元素的化合物,分別溶解形成溶液後混合,形成前驅體溶液;其中0<x<0.4,0

Figure 107145705-A0101-12-0007-17
y<0.4,R選自Sn4+,Ti3+,V2+,Mn3+,Fe2+,Co3+,Ni3+,Nb5+,Mo5+,Tc5+,Ru4+,Rh4+,Pd4+,Sb5+,Ta5+,W5+,Re4+,Os4+,Ir4+,Pt4+中的一種或多種。 S1: Weigh the compounds containing zinc (Zn), gallium (Ga), chromium (Cr) and R elements according to the general chemical formula ZnGa 2-xy O 4 : xCr 3+ , yR in molar ratio of each element, and dissolve them separately After forming a solution, mix to form a precursor solution; where 0<x<0.4, 0
Figure 107145705-A0101-12-0007-17
y<0.4, R is selected from Sn 4+ ,Ti 3+ ,V 2+ ,Mn 3+ ,Fe 2+ ,Co 3+ ,Ni 3+ ,Nb 5+ ,Mo 5+ ,Tc 5+ ,Ru 4+ One or more of, Rh 4+ , Pd 4+ , Sb 5+ , Ta 5+ , W 5+ , Re 4+ , Os 4+ , Ir 4+ , and Pt 4+ .

具體地,在一些實施例中,所述含有Zn的化合物為含有Zn的氧化物、碳酸鹽、硝酸鹽、鹵化物中的一種或多種;所述含有Ga的化合物為含有Ga的氧化物、碳酸鹽、硝酸鹽、鹵化物中的一種或多種;所述含有Cr的化合物為含有Cr的氧化物、碳酸鹽、硝酸鹽、鹵化物中的一種或多種;所述含有R的化合物為含有R的氧化物、碳酸鹽、硝酸鹽、鹵化物中的一種或多種。分別將上述含有鋅(Zn)、稼(Ga)、鉻(Cr)、R的化合物溶解後,形成各自的溶液,然後混合均勻,即形成前驅體溶液。 Specifically, in some embodiments, the Zn-containing compound is one or more of Zn-containing oxides, carbonates, nitrates, and halides; the Ga-containing compound is Ga-containing oxides, carbonic acid One or more of salt, nitrate, and halide; the compound containing Cr is one or more of oxide, carbonate, nitrate, and halide containing Cr; the compound containing R is one containing R One or more of oxides, carbonates, nitrates, and halides. After dissolving the above-mentioned compounds containing zinc (Zn), gallium (Ga), chromium (Cr), and R, respectively, the respective solutions are formed and then mixed uniformly to form a precursor solution.

S2:將載體置於所述前驅體溶液中混合,所述混合後的溶液經加熱烘烤形成粉體;所述載體具有介孔結構,作為載體的氧化物優選為二氧化矽、二氧化鈦、氧化矽、氧化鈦和氧化鋅等。 S2: The carrier is placed in the precursor solution and mixed, and the mixed solution is heated and baked to form a powder; the carrier has a mesoporous structure, and the oxide of the carrier is preferably silicon dioxide, titanium dioxide, and oxide Silicon, titanium oxide, zinc oxide, etc.

具體地,所述載體可通過市售購買,也可採用本領域常用方法現用現製。以介孔奈米二氧化矽作為載體為例,取一定量的介孔奈米二氧化矽置於配製好的前驅體溶液中混合,混合好後的溶液置於真空烘箱中,於60℃~110℃下烘烤1~24h,待溶劑全部蒸乾後,形成粉體。 Specifically, the carrier can be purchased commercially, or it can be made on-the-spot using methods commonly used in the art. Taking mesoporous nanosilica as the carrier as an example, a certain amount of mesoporous nanosilica is mixed in the prepared precursor solution, and the mixed solution is placed in a vacuum oven at 60℃~ Bake at 110°C for 1~24h, after all the solvents are evaporated, a powder will be formed.

S3:將所述粉體進行研磨後,鍛燒處理6~20h,即得所述奈 米複合螢光粉。 S3: After grinding the powder, calcining for 6~20h to obtain the powder Rice composite phosphor.

具體地,在一些實施例中,將所述粉體進行研磨處理,然後置於船型坩堝中鍛燒處理,所述鍛燒處理包括:將所述研磨後的粉體以2℃/min~5℃/min的速率升溫至200℃~700℃,持續鍛燒1h~10h;再以2℃/min~5℃/min的速率升溫至500℃~1200℃,持續鍛燒1h~10h。 Specifically, in some embodiments, the powder is ground and then placed in a boat-shaped crucible for calcination. The calcination includes: heating the ground powder at a temperature of 2°C/min~5°C/min. The temperature is increased to 200°C~700°C at a rate of ℃/min, and the calcination is continued for 1h~10h; then the temperature is increased to 500°C~1200°C at a rate of 2°C/min~5°C/min, and the calcination is continued for 1h~10h.

通過這樣的方式進行鍛燒可以使前驅體溶液於介孔中均勻形成穩定晶相。 Calcining in this way can make the precursor solution uniformly form a stable crystal phase in the mesopores.

在一些實施例中,所述載體與所述前驅體溶液的固液比mg:ml為100:0.5~100:20;所述前驅體溶液的莫耳濃度優選為0.1M~1.5M。其中所述前驅體溶液的莫耳濃度是指1毫升前驅體溶液中所含總溶質的毫莫耳數。隨著前驅體溶液的莫耳濃度提高,使最終負載到載體上的紅外螢光粉含量增加,進而可相對提高螢光強度。但前驅體溶液的莫耳濃度也不宜過高,優選為前述範圍。 In some embodiments, the solid-to-liquid ratio mg:ml of the carrier to the precursor solution is 100:0.5-100:20; the molar concentration of the precursor solution is preferably 0.1M-1.5M. Wherein, the molar concentration of the precursor solution refers to the number of millimoles of the total solute contained in 1 ml of the precursor solution. As the molar concentration of the precursor solution increases, the content of the infrared phosphor finally loaded on the carrier increases, and the fluorescence intensity can be relatively increased. However, the molar concentration of the precursor solution should not be too high, and is preferably in the aforementioned range.

本發明的另一個方面是提供一種發光裝置,包括:激發光源和位於所述激發光源上的封裝層,所述封裝層的材料包括上述的奈米複合螢光粉和封裝膠體。 Another aspect of the present invention is to provide a light-emitting device, comprising: an excitation light source and an encapsulation layer on the excitation light source, and the material of the encapsulation layer includes the aforementioned nanocomposite phosphor and an encapsulation colloid.

具體地,在一些實施例中,所述激發光源包括但不限於微型發光二極體晶片(micro-LED chip)、微型鐳射二極體晶片(micro-LD chip)、次毫米發光二極體晶片(mini-LED chip)或次毫米鐳射二極體晶片(mini-LD chip),所述晶片為水平式晶片、垂直式晶片或覆晶式晶片。所述封裝膠體為常用膠體,可市售獲得,優選為矽氧烷系矽膠。 Specifically, in some embodiments, the excitation light source includes, but is not limited to, a micro-LED chip, a micro-LD chip, and a sub-millimeter light-emitting diode chip. (mini-LED chip) or sub-millimeter laser diode chip (mini-LD chip), the chip is a horizontal chip, a vertical chip or a flip-chip chip. The encapsulation colloid is a commonly used colloid, which is commercially available, and is preferably a silicone-based silicone rubber.

在製作過程中,首先將激發光源固晶焊線於一基底上;分別取一定量的奈米複合螢光粉及矽膠混合;然後將混合物封裝於晶片上並進行烘烤,即形成所述發光裝置。 In the manufacturing process, firstly, the excitation light source is die-bonded and bonded on a substrate; a certain amount of nano-composite phosphor and silica gel are mixed separately; then the mixture is packaged on the chip and baked to form the luminescence Device.

在一些實施例中,以所述封裝層的總質量計,所述奈米複合螢光粉的質量分數為50%~100%。即所述奈米複合螢光粉的質量占封裝層總質量的50%~100%。 In some embodiments, based on the total mass of the encapsulation layer, the mass fraction of the nanocomposite phosphor is 50%-100%. That is, the mass of the nanocomposite phosphor accounts for 50%-100% of the total mass of the encapsulation layer.

在一些實施例中,隨著所述封裝層的厚度變化,所述奈米複合螢光粉的質量分數呈梯度變化或連續變化,所述奈米複合螢光粉的平均質量分數為50%~100%。也即,奈米螢光粉的濃度(質量分數)可隨著距離激發光源晶片越近,濃度越高或越低,並呈現梯度變化或連續變化。 In some embodiments, as the thickness of the encapsulation layer changes, the mass fraction of the nanocomposite phosphor changes gradually or continuously, and the average mass fraction of the nanocomposite phosphor is 50%~ 100%. That is, the concentration (mass fraction) of the nano-phosphor powder may be higher or lower as the distance to the excitation light source wafer is closer, and the concentration may change gradually or continuously.

螢光粉質量占比越高,其形成的螢光層厚度越薄、緻密度高,有利於晶片散熱並降低膠體龜裂發生,提升LED的晶片光效;螢光粉質量占比越低,其形成的螢光層會越透明,有利於後期工藝流程中獲得相鄰發光晶片較大間距,降低切割分離覆蓋螢光粉或螢光膠體的發光晶片的精度要求,從而提高器件的可靠性和均一性。因此,通過使封裝層中的螢光粉呈梯度濃度,例如,使接近晶片的部分螢光粉濃度較高,遠離晶片的部分螢光粉濃度較低,從而一方面可以提高光效,另一方面利於後期工藝流程。 The higher the quality of the phosphor, the thinner and denser the phosphor layer formed, which is conducive to the heat dissipation of the chip, reduces the occurrence of colloidal cracks, and improves the light efficiency of the LED chip; the lower the quality of the phosphor, The phosphor layer formed will be more transparent, which is conducive to obtaining a larger distance between adjacent light-emitting wafers in the later process, reducing the precision requirements for cutting and separating the light-emitting wafer covered with phosphor or phosphor colloid, thereby improving the reliability and reliability of the device. Uniformity. Therefore, by making the phosphor in the encapsulation layer have a gradient concentration, for example, the phosphor concentration of the part close to the chip is higher, and the phosphor concentration of the part far away from the chip is lower, so that the light efficiency can be improved on the one hand, and the other This is conducive to the later process.

下面通過具體實施例說明: The following is illustrated by specific embodiments:

實施例1 Example 1

(1)介孔奈米二氧化矽(MSNs)的製備 (1) Preparation of mesoporous nanosilica (MSNs)

將5.728g溴化十六烷基三甲銨(Hexadecyl trimethyl ammonium bromide,CTAB)溶於280mL的去離子水與80mL的無水乙醇中,再加入0.5mL的氨水(NH4OH)水溶液於60℃油浴下均勻混合30分鐘。當CTAB溶解完後,再緩慢滴入14.6mL四乙氧基矽烷(Tetraethyl orthosilicate,TEOS),於60℃油浴下均勻混合2h。 Dissolve 5.728 g of Hexadecyl trimethyl ammonium bromide (CTAB) in 280 mL of deionized water and 80 mL of absolute ethanol, then add 0.5 mL of aqueous ammonia (NH 4 OH) in an oil bath at 60°C Mix well for 30 minutes. When the CTAB is dissolved, add 14.6 mL of Tetraethyl orthosilicate (TEOS) slowly, and mix it evenly for 2 hours in an oil bath at 60°C.

將混合液放置離心管中作離心,並使用無水甲醇清洗三次後,再連同離心管放入真空烘箱中,於110℃持溫3h,形成白色乾燥物。將得到的白色乾燥物研磨處理,並放置船型坩堝中,以每分鐘5℃的升溫速率,升溫至550℃,持溫五小時再爐冷,即形成介孔奈米二氧化矽。再分別通過高解析度透射電子顯微鏡(High-resolution transmission electron microscope-)及傅立葉轉換紅外線光譜(Fouirer-transform infrared spectrum;FTIR)分析(分別如第1圖及第2圖所示)。由HRTEM分析知仲介孔奈米二氧化矽的外觀為多邊形顆粒,粒徑約為64nm。FTIR分析知主要官能基團為Si-O-Si(1100cm-1)、Si-OH(1600cm-1)、Si-H(2400cm-1)及O-H(3500cm-1)。 Place the mixed solution in a centrifuge tube for centrifugation and wash it with anhydrous methanol three times, then put it in a vacuum oven together with the centrifuge tube, and hold the temperature at 110°C for 3 hours to form a white dry substance. Grind the obtained white dried material and place it in a boat-shaped crucible. At a temperature rising rate of 5°C per minute, the temperature is raised to 550°C, and the temperature is maintained for five hours and then cooled in the furnace to form mesoporous nanosilica. Then they were analyzed by high-resolution transmission electron microscope (High-resolution transmission electron microscope-) and Fourier-transform infrared spectrum (FTIR) (as shown in Figure 1 and Figure 2, respectively). According to HRTEM analysis, the appearance of secondary mesoporous nanosilica is polygonal particles with a particle size of about 64nm. FTIR analysis of the major functional groups known as Si-O-Si (1100cm -1 ), Si-OH (1600cm -1), Si-H (2400cm -1) and OH (3500cm -1).

(2)前驅體溶液的製備 (2) Preparation of precursor solution

將4.5861g的Ga2O3,放置含40mL硝酸的60mL水溶液中,於油浴95℃下將固體溶解,獲得0.25M的硝酸鎵溶液。再取1mL的0.25M硝酸鎵(Gallium(III)nitrate)溶液,與23.4mg的醋酸鋅(Zinc acetate)、1mg的硝酸鉻(Chromium nitrate)及0.48mg的氯化亞錫(Stannous chloride)作混合,形成前驅體溶液。 Place 4.5861 g of Ga 2 O 3 in a 60 mL aqueous solution containing 40 mL of nitric acid, and dissolve the solid in an oil bath at 95° C. to obtain a 0.25 M gallium nitrate solution. Then take 1mL of 0.25M Gallium(III)nitrate solution and mix it with 23.4mg of Zinc acetate, 1mg of Chromium nitrate and 0.48mg of Stannous chloride , Form a precursor solution.

(3)奈米複合螢光粉的製備 (3) Preparation of nano-composite phosphor

將步驟(2)製備的前驅體溶液與100mg步驟(1)製備的MSNs混合,再放入真空烘箱,於110℃烘烤3h,形成粉體。將粉體研磨處 理,並放置於船型坩堝中,以每分鐘5℃的升溫速率升至600℃,持溫2h;再以每分鐘2℃的升溫速率升至1000℃,持溫4h再爐冷,即得到奈米複合螢光粉(ZGOCS@MSNs)。 The precursor solution prepared in step (2) was mixed with 100 mg of MSNs prepared in step (1), and then placed in a vacuum oven and baked at 110° C. for 3 hours to form a powder. Grind the powder It is placed in a ship-shaped crucible, and the temperature rises to 600°C at a heating rate of 5°C per minute, and the temperature is maintained for 2 hours; then at a heating rate of 2°C per minute to 1000°C, the temperature is maintained for 4 hours and then the furnace is cooled to obtain the Rice composite phosphor (ZGOCS@MSNs).

通過XRD光譜(如第3圖所示)分析可知,ZGOCS@MSNs為立方晶體系尖晶石(Spinel)結構的單相固溶體;由高解析電子顯微鏡分析(如第4圖所示),可得知ZGOCS@MSNs粒徑為57nm,且可觀察到顆粒中央顏色較深的球形顆粒是ZGOCS。並由光致發光光譜(Photoluminescence spectra,PL)觀察(如第5圖所示),該ZGOCS@MSNs的激發範圍為250nm-600nm,激發波峰為406nm(4A24T1)及550nm(4A24T2);發光範圍為650nm-750nm,發光波峰為705nm(2E→4A2),半高寬(FWHM)為50nm。相較於460nm的藍光,以406nm紫外光源作激發,ZGOCS@MSNs的發光強度較高。 Through the analysis of XRD spectrum (as shown in Figure 3), ZGOCS@MSNs is a single-phase solid solution with a cubic spinel structure; it is analyzed by a high-resolution electron microscope (as shown in Figure 4), It can be known that the particle size of ZGOCS@MSNs is 57nm, and it can be observed that the spherical particles with a darker color in the center of the particles are ZGOCS. And observed by the photoluminescence spectra (PL) (as shown in Figure 5), the excitation range of the ZGOCS@MSNs is 250nm-600nm, and the excitation peak is 406nm ( 4 A 24 T 1 ) and 550nm ( 4 A 24 T 2 ); the luminous range is 650nm-750nm, the luminous peak is 705nm ( 2 E→ 4 A 2 ), and the half-maximum width (FWHM) is 50nm. Compared with 460nm blue light, with 406nm ultraviolet light source as excitation, ZGOCS@MSNs has higher luminous intensity.

實施例2~7 Examples 2~7

照實施例1的方法製備奈米複合螢光粉,所不同的是,分別改變Cr3+,及Sn4+共摻雜的莫耳分數,如下表1:

Figure 107145705-A0101-12-0011-2
The nanocomposite phosphor was prepared according to the method of Example 1, except that the molar fractions of Cr 3+ and Sn 4+ co-doped were changed, as shown in Table 1:
Figure 107145705-A0101-12-0011-2

通過PL光譜分別觀察上述不同實施例製備的奈米複合螢光粉的發光性能,並將其發光區域的積分面積轉換成相對強度分佈圖(如第6 圖所示)可知,具有2% Cr3+ and 2% Sn4+的奈米複合螢光粉,其螢光強度最高。 Observe the luminescence properties of the nanocomposite phosphors prepared in the above different examples through PL spectroscopy, and convert the integral area of the luminescent region into a relative intensity distribution diagram (as shown in Figure 6), and it can be seen that it has 2% Cr 3 + and 2% Sn 4+ nanocomposite phosphor has the highest fluorescence intensity.

實施例8~11 Examples 8~11

按照實施例4的方法製備奈米複合螢光粉(其前驅體溶液的莫耳濃度為0.125M),所不同的是,分別增加前驅體溶液的莫耳濃度,如下表2:

Figure 107145705-A0101-12-0012-3
Prepare nanocomposite phosphors according to the method of Example 4 (the molar concentration of the precursor solution is 0.125M), except that the molar concentration of the precursor solution is increased respectively, as shown in Table 2:
Figure 107145705-A0101-12-0012-3

通過PL光譜分別觀察上述不同實施例製備的奈米複合螢光粉的發光性能,並將其發光區域的積分面積轉換成相對強度分佈圖(如第7圖所示)可知,將莫耳濃度提升四倍的奈米複合螢光粉,其螢光強度最高。 Observe the luminescence properties of the nanocomposite phosphors prepared in the above different embodiments through PL spectroscopy, and convert the integral area of the luminescence area into a relative intensity distribution diagram (as shown in Figure 7), which shows that the molar concentration is increased Four times the nano-composite phosphor has the highest fluorescence intensity.

實施例12 Example 12

選用9*5mil尺寸,發光波段為473nm的含GaN結構的Mini-LED晶片,粒徑為57nm,發光波峰為705nm的ZGOCS@MSNs作為螢光粉,封裝膠選用矽氧烷系矽膠,ZGOCS@MSNs螢光粉與矽氧烷系矽膠的質量比為1:1。 Choose 9*5mil size, 473nm GaN-containing Mini-LED chip with a luminous band of 473nm, a particle size of 57nm, and a luminous peak of 705nm ZGOCS@MSNs as the phosphor. The encapsulant is made of silicone, ZGOCS@MSNs The mass ratio of phosphor to silicone-based silicone is 1:1.

將Mini-LED晶片固晶焊線於一基底上,將上述螢光粉與矽氧烷系矽膠混合,然後將混合物封裝於該Mini-LED晶片上並進行烘烤,形成含有ZGOCS@MSNs螢光粉的Mini-LED發光裝置。 Bonding the Mini-LED chip to a substrate, mixing the phosphor and silicone-based silicone, and then encapsulating the mixture on the Mini-LED chip and baking it to form a phosphor containing ZGOCS@MSNs Pink Mini-LED lighting device.

實施例13 Example 13

採用實施例12的方法製備Mini-LED發光裝置。通過PL光譜(如第8圖所示)分別觀察採用實施例4和實施例10的奈米複合螢光粉製備的發光裝置的發光性能,進一步地可看出,當ZGOCS@MSNs螢光粉應用於發光裝置後,隨著前驅體溶液的莫耳濃度的提升,螢光強度提高進而使發光效率更高。 The method of Example 12 was used to prepare a Mini-LED light-emitting device. The PL spectrum (as shown in Figure 8) was used to observe the luminescence performance of the light-emitting devices prepared with the nanocomposite phosphors of Example 4 and Example 10. It can be further seen that when ZGOCS@MSNs phosphors are used After the light-emitting device, as the molar concentration of the precursor solution increases, the fluorescence intensity increases and the luminous efficiency becomes higher.

本領域技術人員應當注意的是,本發明所描述的實施方式僅僅是示範性的,可在本發明的範圍內作出各種其他替換、改變和改進。因而,本發明不限於上述實施方式,而僅由申請專利範圍限定。 Those skilled in the art should note that the described embodiments of the present invention are only exemplary, and various other substitutions, changes and improvements can be made within the scope of the present invention. Therefore, the present invention is not limited to the above-mentioned embodiments, but is only limited by the scope of patent application.

Figure 107145705-A0101-11-0001-1
Figure 107145705-A0101-11-0001-1

Claims (11)

一種奈米複合螢光粉,包括載體及負載於該載體上的紅外螢光粉,其中該載體為氧化物,該紅外螢光粉的化學通式為ZnGa2-x-yO4:xCr3+,yR,其中x和y均為莫耳分數,且0<x<0.4,0
Figure 107145705-A0101-13-0001-18
y<0.4,R選自Sn4+,Ti3+,V2+,Mn3+,Fe2+,Co3+,Ni3+,Nb5+,Mo5+,Tc5+,Ru4+,Rh4+,Pd4+,Sb5+,Ta5+,W5+,Re4+,Os4+,Ir4+,Pt4+中的一種或多種。
A nano-composite phosphor comprising a carrier and an infrared phosphor supported on the carrier, wherein the carrier is an oxide, and the general chemical formula of the infrared phosphor is ZnGa 2-xy O 4 : xCr 3+ , yR, where x and y are both molar fractions, and 0<x<0.4, 0
Figure 107145705-A0101-13-0001-18
y<0.4, R is selected from Sn 4+ ,Ti 3+ ,V 2+ ,Mn 3+ ,Fe 2+ ,Co 3+ ,Ni 3+ ,Nb 5+ ,Mo 5+ ,Tc 5+ ,Ru 4+ One or more of, Rh 4+ , Pd 4+ , Sb 5+ , Ta 5+ , W 5+ , Re 4+ , Os 4+ , Ir 4+ , and Pt 4+ .
如請求項1所述的奈米複合螢光粉,其中,該奈米複合螢光粉的粒徑小於200nm。 The nano-composite phosphor according to claim 1, wherein the particle size of the nano-composite phosphor is less than 200 nm. 如請求項1所述的奈米複合螢光粉,其中,該奈米複合螢光粉的發光波長為600nm~2000nm,該奈米複合螢光粉的激發波長為250~600nm。 The nanocomposite phosphor according to claim 1, wherein the emission wavelength of the nanocomposite phosphor is 600 nm to 2000 nm, and the excitation wavelength of the nanocomposite phosphor is 250 to 600 nm. 如請求項1所述的奈米複合螢光粉,其中,該載體具有介孔結構,該氧化物選自二氧化矽、二氧化鈦、氧化矽、氧化鈦和氧化鋅中的一種或多種。 The nanocomposite phosphor according to claim 1, wherein the carrier has a mesoporous structure, and the oxide is selected from one or more of silicon dioxide, titanium dioxide, silicon oxide, titanium oxide, and zinc oxide. 一種如請求項1至4中任一項所述的奈米複合螢光粉的製備方法,包括:按化學通式ZnGa2-x-yO4:xCr3+,yR中各元素的莫耳比秤取含有Zn、Ga、Cr、R元素的化合物,分別溶解形成溶液後混合,形成前驅體溶液;將所述載體置於該前驅體溶液中混合,該混合後的溶液經加熱烘烤形成粉體;將該粉體進行研磨後,鍛燒處理6~20h,即得所述奈米複合螢光粉。 A method for preparing nanocomposite phosphors according to any one of claims 1 to 4, comprising: mol ratio scale of each element in yR according to the general chemical formula ZnGa 2-xy O 4 : xCr 3+ Take compounds containing Zn, Ga, Cr, and R elements, respectively dissolve them to form a solution and mix to form a precursor solution; place the carrier in the precursor solution and mix, and the mixed solution is heated and baked to form a powder ; After the powder is ground, calcined for 6-20h to obtain the nanocomposite phosphor. 如請求項5所述的製備方法,其中,該鍛燒處理包括:將該研磨後的粉體以2℃/min~5℃/min的速率升溫至200℃~700℃,持 續鍛燒1h~10h;再以2℃/min~5℃/min的速率升溫至500℃~1200℃,持續鍛燒1h~10h。 The preparation method according to claim 5, wherein the calcining treatment includes: heating the ground powder to 200°C to 700°C at a rate of 2°C/min to 5°C/min, and holding Continue calcining for 1h~10h; then increase the temperature to 500℃~1200℃ at a rate of 2℃/min~5℃/min, and continue calcining for 1h~10h. 如請求項5所述之製備方法,其中,該載體與該前驅體溶液的固液比mg:ml為100:0.5~100:20;該前驅體溶液的莫耳濃度為0.1M~1.5M。 The preparation method according to claim 5, wherein the solid-to-liquid ratio mg:ml of the carrier to the precursor solution is 100:0.5-100:20; the molar concentration of the precursor solution is 0.1M-1.5M. 一種發光裝置,包括一激發光源和位於該激發光源上的一封裝層,其中,該封裝層的材料包括請求項1至4中任一項所述的奈米複合螢光粉和一封裝膠體。 A light emitting device includes an excitation light source and an encapsulation layer on the excitation light source, wherein the material of the encapsulation layer includes the nanocomposite phosphor according to any one of claims 1 to 4 and an encapsulation colloid. 如請求項8所述的發光裝置,其中,以所述封裝層的總質量計,該奈米複合螢光粉的質量分數為50%~100%。 The light emitting device according to claim 8, wherein, based on the total mass of the encapsulation layer, the mass fraction of the nanocomposite phosphor is 50%-100%. 如請求項9所述的發光裝置,其中,隨著所述封裝層的厚度變化,該奈米複合螢光粉的質量分數呈梯度變化或連續變化,該奈米複合螢光粉的平均質量分數為50%~100%。 The light-emitting device according to claim 9, wherein as the thickness of the encapsulation layer changes, the mass fraction of the nanocomposite phosphor changes gradually or continuously, and the average mass fraction of the nanocomposite phosphor It is 50%~100%. 如請求項8所述的發光裝置,其中,該激發光源為微型發光二極體晶片、微型鐳射二極體晶片、次毫米發光二極體晶片或次毫米鐳射二極體晶片,所述晶片為水平式晶片、垂直式晶片或覆晶式晶片。 The light-emitting device according to claim 8, wherein the excitation light source is a miniature light-emitting diode chip, a miniature laser diode chip, a sub-millimeter light-emitting diode chip or a sub-millimeter laser diode chip, and the chip is Horizontal chip, vertical chip or flip chip.
TW107145705A 2018-08-22 2018-12-18 Nano composite fluorescent powder, its preparation method and luminescent device TWI698515B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862721391P 2018-08-22 2018-08-22
US62/721,391 2018-08-22
US201862753252P 2018-10-31 2018-10-31
US62/753,252 2018-10-31

Publications (2)

Publication Number Publication Date
TW202009292A TW202009292A (en) 2020-03-01
TWI698515B true TWI698515B (en) 2020-07-11

Family

ID=69636384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107145705A TWI698515B (en) 2018-08-22 2018-12-18 Nano composite fluorescent powder, its preparation method and luminescent device

Country Status (2)

Country Link
CN (1) CN110857387A (en)
TW (1) TWI698515B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116200130A (en) * 2022-10-21 2023-06-02 上海海优威新材料股份有限公司 Encapsulating film for enhanced luminescence

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200536152A (en) * 2004-02-27 2005-11-01 Dowa Mining Co Phosphor and manufacturing method thereof, and light source, led using said phosphor
CN106905963A (en) * 2017-03-07 2017-06-30 中国人民银行印制科学技术研究所 A kind of light emitting articles and the method for differentiating the determinand true and false
TW201736573A (en) * 2016-01-26 2017-10-16 馬克專利公司 Composition, color conversion sheet and light emitting diode device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100716069B1 (en) * 2005-03-16 2007-05-09 한국에너지기술연구원 Manufacturing method of white light emitting phosphor
CN106967428A (en) * 2017-03-13 2017-07-21 吉林大学 Gallium zinc stannate near-infrared long-afterglow material that a kind of erbium, chromium are co-doped with and preparation method thereof
CN107384381A (en) * 2017-07-26 2017-11-24 华南理工大学 A kind of double-colored long after glow luminous material of gallic acid zinc-base and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200536152A (en) * 2004-02-27 2005-11-01 Dowa Mining Co Phosphor and manufacturing method thereof, and light source, led using said phosphor
TW201736573A (en) * 2016-01-26 2017-10-16 馬克專利公司 Composition, color conversion sheet and light emitting diode device
CN106905963A (en) * 2017-03-07 2017-06-30 中国人民银行印制科学技术研究所 A kind of light emitting articles and the method for differentiating the determinand true and false

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HongbinChen et al., "Near-infrared persistent luminescence phosphors ZnGa2O4:Cr3+ as an accurately tracker to photothermal therapy in vivo for visual treatment", Materials Science and Engineering: C, Volume 79, 1 October 2017, Pages 372-381 *
HongbinChen et al., "Near-infrared persistent luminescence phosphors ZnGa2O4:Cr3+ as an accurately tracker to photothermal therapy in vivo for visual treatment", Materials Science and Engineering: C, Volume 79, 1 October 2017, Pages 372-381。

Also Published As

Publication number Publication date
CN110857387A (en) 2020-03-03
TW202009292A (en) 2020-03-01

Similar Documents

Publication Publication Date Title
JP5313173B2 (en) Doped garnet luminophore for pcLED
Ye et al. Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
CN102186944B (en) For the doped garnet luminescent material with red shift of PC LED
Liu et al. Effect of gallium ion content on thermal stability and reliability of YAG: Ce phosphor films for white LEDs
JP5819967B2 (en) Silicate phosphor
TWI547545B (en) Phosphors
JP6393307B2 (en) Phosphors based on magnesium alumosilicate
Park et al. Synthesis and luminescent characteristics of yellow emitting GdSr2AlO5: Ce3+ phosphor for blue light based white LED
JP2010523740A (en) Method for producing light emitter for pcLED comprising orthosilicate
JP2010523739A (en) Method of manufacturing a phosphor for pcLED based on orthosilicate
Wang et al. Improved synthesis of perovskite CsPbX3@ SiO2 (X= Cl, Br, and I) quantum dots with enhanced stability and excellent optical properties
JP2017501264A (en) Eu2 + activated phosphor
CN106929015A (en) Red fluorescence powder, its preparation method and the luminescent device comprising the red fluorescence powder
JP5912121B2 (en) Mn activated fluorescent material
TWI698515B (en) Nano composite fluorescent powder, its preparation method and luminescent device
Mun et al. Light-extraction enhancement of white LEDs with different phases of TiO2: 0.01 Eu3+ spheres
TWI551667B (en) Carbodiimide phosphors
TWI440695B (en) Preparation of Manganese Activated Zinc - Aluminum Spinel Green Fluorescent Nanometer Powder by Sol - Gel Technique and Its
TWI728642B (en) Infrared phosphor, phosphor composite material and light-emitting device comprising the same, and method of preparing phosphor composite material
Sameie et al. A nanostructure phosphor: effect of process parameters on the photoluminescence properties for near-UV WLED applications
TWI431099B (en) Method for the preparation of phosphors and phosphors prepared therefrom
CN110041931B (en) Near-infrared fluorescent film, preparation method thereof and near-infrared LED
TWI503399B (en) Preparation of Mn - Activated Zinc - Aluminum Spinel Fluorescent Films
Zhao et al. Improvement in the luminescence and enhancement of the thermo-stability of SiO2 coating on LiAlSiO4: Eu3+ phosphor
TWI704212B (en) Method for preparing zinc stannate spinel fluorescent film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees