TWI698044B - Antenna module and manufacturing method thereof - Google Patents
Antenna module and manufacturing method thereof Download PDFInfo
- Publication number
- TWI698044B TWI698044B TW107113765A TW107113765A TWI698044B TW I698044 B TWI698044 B TW I698044B TW 107113765 A TW107113765 A TW 107113765A TW 107113765 A TW107113765 A TW 107113765A TW I698044 B TWI698044 B TW I698044B
- Authority
- TW
- Taiwan
- Prior art keywords
- antenna
- layer
- antenna module
- insulating
- dielectric layer
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
- H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
- H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02377—Fan-in arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
Description
本申請案主張於2017年7月18日在韓國智慧財產局提出申請的韓國專利申請案第10-2017-0091120號的優先權以及於2017年11月3日在韓國智慧財產局提出申請的韓國專利申請案第10-2017-0146113號的優先權,所述各韓國專利申請案的揭露內容全文併入本案供參考。 This application claims the priority of Korean Patent Application No. 10-2017-0091120 filed in the Korean Intellectual Property Office on July 18, 2017, and the Korean patent application filed in the Korean Intellectual Property Office on November 3, 2017 The priority of patent application No. 10-2017-0146113, the disclosure content of each Korean patent application is incorporated into this case for reference.
本揭露是有關於一種天線模組及其製造方法。 The disclosure relates to an antenna module and a manufacturing method thereof.
近來,已對包括第五代(5G)通訊在內的毫米波(millimeter wave,mmWave)通訊進行了積極研究,且正在積極開展對能夠平穩地實作毫米波通訊的天線模組的商用化的研究。 Recently, millimeter wave (mmWave) communications including fifth-generation (5G) communications have been actively studied, and the commercialization of antenna modules that can smoothly implement millimeter wave communications is being actively carried out. the study.
在傳統上,提供毫米波通訊環境的天線模組使用其中在板上設置有積體電路(integrated circuit,IC)及天線且積體電路與天線藉由同軸電纜連接至彼此的結構,以根據高頻滿足高階天線效能(例如,傳送及接收速率、增益、指向性等)。 Traditionally, antenna modules that provide a millimeter-wave communication environment use a structure in which an integrated circuit (IC) and an antenna are arranged on the board, and the integrated circuit and the antenna are connected to each other by a coaxial cable, so as Frequency satisfies high-order antenna performance (for example, transmission and reception rate, gain, directivity, etc.).
然而,此種結構會造成天線佈局空間的短缺、天線形狀 的自由度受限、天線與積體電路之間的干擾增大且天線模組的尺寸增大及成本提高。 However, this structure will cause a shortage of antenna layout space and antenna shape The degree of freedom of the antenna is limited, the interference between the antenna and the integrated circuit increases, and the size and cost of the antenna module increase.
本揭露的態樣可提供一種在使用多個天線單元提供能夠易於確保天線效能的環境來改善射頻(radio frequency,RF)訊號的傳送及接收效能的同時易於被微型化的天線模組及其製造方法。 The aspect of the present disclosure can provide an antenna module that can be easily miniaturized while using multiple antenna units to provide an environment that can easily ensure antenna performance to improve the transmission and reception performance of radio frequency (RF) signals. method.
根據本揭露的態樣,一種天線模組可包括:連接構件,包括至少一個配線層及至少一個絕緣層;積體電路(IC),設置於所述連接構件的第一表面上且電性連接至所述至少一個配線層;以及多個天線單元,分別設置於所述連接構件的第二表面上。所述多個天線單元中的每一者可包括天線構件、饋通孔(feed via)、介電層及鍍覆構件(plating member),所述天線構件被配置成傳送或接收射頻(RF)訊號,所述饋通孔的一端電性連接至所述天線構件且另一端電性連接至所述至少一個配線層的對應的配線,所述介電層環繞所述饋通孔的側表面且具有較所述至少一個絕緣層的高度大的高度,所述鍍覆構件環繞所述介電層的側表面。 According to an aspect of the present disclosure, an antenna module may include: a connecting member including at least one wiring layer and at least one insulating layer; an integrated circuit (IC) disposed on the first surface of the connecting member and electrically connected To the at least one wiring layer; and a plurality of antenna units are respectively disposed on the second surface of the connecting member. Each of the plurality of antenna units may include an antenna member, a feed via, a dielectric layer, and a plating member, the antenna member being configured to transmit or receive radio frequency (RF) Signal, one end of the feed-through hole is electrically connected to the antenna member and the other end is electrically connected to the corresponding wiring of the at least one wiring layer, the dielectric layer surrounds the side surface of the feed-through hole and Having a height greater than that of the at least one insulating layer, the plating member surrounds the side surface of the dielectric layer.
根據本揭露的另一態樣,一種天線模組的製造方法可包括:製造多個天線單元,所述多個天線單元分別包括天線構件、饋通孔、介電層及鍍覆構件,所述天線構件被配置成傳送或接收射頻(RF)訊號,所述饋通孔的一端電性連接至所述天線構件,所述 介電層環繞所述饋通孔的側表面,所述鍍覆構件環繞所述介電層的側表面;將所述多個天線單元插入絕緣構件的插入空間中,所述絕緣構件為所述多個天線單元提供所述插入空間;以及形成連接構件,所述連接構件包括電性連接至所述饋通孔的另一端的至少一個配線層以及高度較所述介電層的高度短的至少一個絕緣層。 According to another aspect of the present disclosure, a method for manufacturing an antenna module may include: manufacturing a plurality of antenna elements, the plurality of antenna elements each including an antenna member, a feedthrough hole, a dielectric layer, and a plating member, the The antenna member is configured to transmit or receive radio frequency (RF) signals, one end of the feedthrough hole is electrically connected to the antenna member, and A dielectric layer surrounds the side surface of the feed-through hole, and the plated member surrounds the side surface of the dielectric layer; inserting the plurality of antenna elements into the insertion space of the insulating member, the insulating member being the A plurality of antenna units provide the insertion space; and a connecting member is formed, the connecting member including at least one wiring layer electrically connected to the other end of the feedthrough hole and at least one wiring layer having a height shorter than that of the dielectric layer An insulating layer.
10h、10i、10j、10k:基底 10h, 10i, 10j, 10k: base
101:U形基底 101: U-shaped base
100:天線封裝 100: antenna package
110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8、110-9、110a、110b、110c、110d、110e、110f、110g、110h、110i、110j、110k、110l、110m、110n、110o、110p:指向器構件 110-1, 110-2, 110-3, 110-4, 110-5, 110-6, 110-7, 110-8, 110-9, 110a, 110b, 110c, 110d, 110e, 110f, 110g, 110h, 110i, 110j, 110k, 110l, 110m, 110n, 110o, 110p: Pointer component
115a、115b、115c、115d、115e、115f、115i、115k、115l、115m、115n、115o、115p:天線構件 115a, 115b, 115c, 115d, 115e, 115f, 115i, 115k, 115l, 115m, 115n, 115o, 115p: antenna components
120a、120b、120c、120d、120f、120g、120j、120k、120l、 120m、120n、120o、120p:饋通孔 120a, 120b, 120c, 120d, 120f, 120g, 120j, 120k, 120l, 120m, 120n, 120o, 120p: feedthrough hole
125d、125f、125g、125h、125k、125l、340n、340o、340p:電性連接結構 125d, 125f, 125g, 125h, 125k, 125l, 340n, 340o, 340p: electrical connection structure
130a、130b、130c、130d、130e、130f、130g、130h、130i、130j、130k、130m、130n、130o、130p、131k、132k、133k、134k:介電層 130a, 130b, 130c, 130d, 130e, 130f, 130g, 130h, 130i, 130j, 130k, 130m, 130n, 130o, 130p, 131k, 132k, 133k, 134k: Dielectric layer
140、140m、140n、140o、140p:絕緣構件 140, 140m, 140n, 140o, 140p: insulating member
150、150m、150n、150o、150p:包封構件 150, 150m, 150n, 150o, 150p: Encapsulation member
160、160-1、160-2、160-3、160-4、160-6、160-7、160-8、160-9、160a、160b、160c、160d、160e、160f、160g、160h、160i、160j、160k、160l、160m、160n、160o、160p:鍍覆構件 160, 160-1, 160-2, 160-3, 160-4, 160-6, 160-7, 160-8, 160-9, 160a, 160b, 160c, 160d, 160e, 160f, 160g, 160h, 160i, 160j, 160k, 160l, 160m, 160n, 160o, 160p: plated components
170m:膜 170m: membrane
190-1、190-2、190-3、190-4、190-5、190-6、190-7、190-8、190-9:屏蔽通孔 190-1, 190-2, 190-3, 190-4, 190-5, 190-6, 190-7, 190-8, 190-9: shielded through holes
200、2140、2240:連接構件 200, 2140, 2240: connecting member
210、210m、210n、210o、210p:配線層 210, 210m, 210n, 210o, 210p: wiring layer
220、220m、220n、220o、220p、2141、2241:絕緣層 220, 220m, 220n, 220o, 220p, 2141, 2241: insulating layer
230、230m、230n、230o、230p:配線通孔 230, 230m, 230n, 230o, 230p: wiring through holes
240、240m、240n、240o、240p、2122、2222:連接墊 240, 240m, 240n, 240o, 240p, 2122, 2222: connection pad
250、250m、250n、250o、250p、2150、2250、2223:鈍化層 250, 250m, 250n, 250o, 250p, 2150, 2250, 2223: passivation layer
300n、300o、300p:積體電路 300n, 300o, 300p: integrated circuit
310n、310o、310p:主動面 310n, 310o, 310p: active surface
320n、320o、320p:非主動面 320n, 320o, 320p: non-active side
330n、330o、330p:金屬構件 330n, 330o, 330p: metal components
350n、350o、350p:被動組件 350n, 350o, 350p: passive components
360n、360o、360p:核心通孔 360n, 360o, 360p: core through hole
1000:電子裝置 1000: Electronic device
1010、2500:主板 1010, 2500: motherboard
1020:晶片相關組件 1020: Chip related components
1030:網路相關組件 1030: Network related components
1040:其他組件 1040: other components
1050:照相機模組 1050: camera module
1060:天線 1060: Antenna
1070:顯示器裝置 1070: display device
1080:電池 1080: battery
1090:訊號線 1090: signal line
1100:智慧型電話 1100: smart phone
2100:扇出型半導體封裝 2100: Fan-out semiconductor package
2120、2220:半導體晶片 2120, 2220: semiconductor wafer
2121、2221:本體 2121, 2221: body
2130:包封體 2130: Encapsulation body
2142:重佈線層 2142: rewiring layer
2143、2243:通孔 2143, 2243: Through hole
2160、2260:凸塊下金屬層 2160, 2260: Metal under bump
2170、2270:焊球 2170, 2270: solder ball
2200:扇入型半導體封裝 2200: Fan-in semiconductor package
2242:配線圖案 2242: Wiring pattern
2243h:通孔孔洞 2243h: Through hole
2251:開口 2251: opening
2280:底部填充樹脂 2280: Underfill resin
2290:模製材料 2290: molding material
2301、2302:中介基板 2301, 2302: Intermediary substrate
R:輻射 R: radiation
結合附圖閱讀以下詳細說明,將更清晰地理解本揭露的以上及其他態樣、特徵以及其他優點,在附圖中:圖1是示出根據本揭露中的示例性實施例的天線模組的視圖。 Read the following detailed description in conjunction with the accompanying drawings to understand the above and other aspects, features, and other advantages of the present disclosure more clearly. In the accompanying drawings: FIG. 1 shows an antenna module according to an exemplary embodiment of the present disclosure View.
圖2A至圖2C是分別示出天線模組的天線單元的實例的視圖。 2A to 2C are views respectively showing examples of antenna units of the antenna module.
圖3A是示出形成天線單元的下表面鍍覆構件及電性連接結構的視圖。 FIG. 3A is a view showing the lower surface plating member and the electrical connection structure forming the antenna unit.
圖3B是示出形成天線單元的天線構件的視圖。 Fig. 3B is a view showing an antenna member forming an antenna unit.
圖3C是示出形成天線單元的饋通孔的視圖。 Fig. 3C is a view showing a feed-through hole forming an antenna unit.
圖3D至圖3G是示出製造天線模組的天線單元的製程的視圖。 3D to 3G are views showing the manufacturing process of the antenna unit of the antenna module.
圖4A至圖4F是示出根據本揭露中的示例性實施例的天線模組的製造方法的視圖。 4A to 4F are views showing a method of manufacturing an antenna module according to an exemplary embodiment in the present disclosure.
圖5至圖7是示出根據本揭露中的示例性實施例的天線模組的另一實例的視圖。 5 to 7 are views showing another example of the antenna module according to the exemplary embodiment in the present disclosure.
圖8是示出根據本揭露中的示例性實施例的天線模組的實例的上表面的示意圖。 FIG. 8 is a schematic diagram showing an upper surface of an example of an antenna module according to an exemplary embodiment in the present disclosure.
圖9是示出根據本揭露中的示例性實施例的天線模組的另一實例的上表面的示意圖。 FIG. 9 is a schematic diagram showing the upper surface of another example of the antenna module according to the exemplary embodiment in the present disclosure.
圖10是示出電子裝置系統的實例的示意性方塊圖。 FIG. 10 is a schematic block diagram showing an example of an electronic device system.
圖11是示出電子裝置的實例的示意性立體圖。 FIG. 11 is a schematic perspective view showing an example of an electronic device.
圖12A及圖12B是示出扇入型半導體封裝在被封裝之前及被封裝之後的狀態的示意性剖視圖。 12A and 12B are schematic cross-sectional views showing the state of the fan-in semiconductor package before and after being packaged.
圖13是示出扇入型半導體封裝的封裝製程的示意性剖視圖。 FIG. 13 is a schematic cross-sectional view showing the packaging process of the fan-in semiconductor package.
圖14是示出其中扇入型半導體封裝安裝於中介基板上且最終安裝於電子裝置的主板上的情形的示意性剖視圖。 14 is a schematic cross-sectional view showing a situation in which a fan-in type semiconductor package is mounted on an intermediate substrate and finally mounted on a main board of an electronic device.
圖15是示出其中扇入型半導體封裝嵌置於中介基板中且最終安裝於電子裝置的主板上的情形的示意性剖視圖。 15 is a schematic cross-sectional view showing a situation in which a fan-in type semiconductor package is embedded in an intermediate substrate and finally mounted on a main board of an electronic device.
圖16是示出扇出型半導體封裝的示意性剖視圖。 FIG. 16 is a schematic cross-sectional view showing a fan-out type semiconductor package.
圖17是示出其中扇出型半導體封裝安裝於電子裝置的主板上的情形的示意性剖視圖。 FIG. 17 is a schematic cross-sectional view showing a situation in which a fan-out type semiconductor package is mounted on a main board of an electronic device.
以下,現在將參照附圖詳細闡述本揭露的示例性實施例。 Hereinafter, exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings.
圖1是示出根據本揭露中的示例性實施例的天線模組的視圖。 FIG. 1 is a view showing an antenna module according to an exemplary embodiment in the present disclosure.
參照圖1,根據本揭露中的示例性實施例的天線模組可
具有其中天線封裝100與連接構件200彼此耦合的異質結構。亦即,藉由利用易於改善天線封裝的天線效能的特性以及易於設置扇出型封裝的電路圖案或積體電路(IC)的特性二者,天線模組可在改善天線效能(例如,傳送及接收速率、增益、指向性等)的同時被微型化。
1, the antenna module according to the exemplary embodiment of the present disclosure may
There is a heterostructure in which the
連接構件200可包括至少一個配線層210及至少一個絕緣層220。連接構件200可更包括連接至至少一個配線層210的配線通孔230、連接至配線通孔230的連接墊240以及鈍化層250,且可具有與銅重佈線層(redistribution layer,RDL)相似的結構。絕緣構件140可設置於連接構件200的上表面上。
The
天線封裝100可包括多個天線單元,所述多個天線單元分別包括:天線構件115a、115b、115c及115d,被配置成傳送或接收射頻(RF)訊號;饋通孔120a、120b、120c及120d,其中各饋通孔的一端電性連接至天線構件115a、115b、115c及115d中的每一者且各饋通孔的另一端電性連接至至少一個配線層210的對應的配線;介電層130a、130b、130c及130d,環繞饋通孔120a、120b、120c及120d的側表面且具有較至少一個絕緣層220的厚度大的厚度;以及鍍覆構件160,環繞介電層130a、130b、130c及130d的側表面。所述多個天線單元可具有區塊形式,但並非僅限於此。
The
參照圖1,所述多個天線單元中的每一者可設置於連接構件200的上表面上。所述多個天線單元中的至少一部分可分別
插入絕緣構件140所提供的多個插入空間中。舉例而言,天線單元可包括電性連接結構125d,且電性連接結構125d可在天線單元插入的同時電性連接於對應的饋通孔120d的一端與至少一個配線層210的對應的配線之間。舉例而言,電性連接結構125d可被實作為電極、引腳、焊球、接腳等。
Referring to FIG. 1, each of the plurality of antenna units may be provided on the upper surface of the
亦即,由於所述多個天線單元可相對於連接構件200獨立地製造,因此所述多個天線單元可具有有利於確保輻射圖案的邊界條件(例如,小的製造容差、短的電性長度、平滑的表面、大尺寸的介電層、介電常數的調整等)。
That is, since the plurality of antenna units can be manufactured independently with respect to the
舉例而言,所述多個天線單元中所包括的介電層130a、130b、130c及130d可具有較至少一個絕緣層220的介電常數Dk(例如,耗散因數Df)大的介電常數Dk或可具有較絕緣構件140的介電常數大的介電常數。通常,難以將具有高介電常數的材料應用於製造天線模組的製程。當所述多個天線單元中所包括的介電層130a、130b、130c及130d被獨立地製造時,所述介電層可容易具有更高的介電常數。此外,介電層130a、130b、130c及130d的高介電常數會減小天線模組的總體大小且降低天線效能。
For example, the
舉例而言,介電層130a、130b、130c及130d、絕緣構件140以及至少一個絕緣層220可由以下材料形成:熱固性樹脂,例如環氧樹脂;熱塑性樹脂,例如聚醯亞胺樹脂;以無機填料及/或例如玻璃纖維(或玻璃布或玻璃織物)等核心材料浸入於熱固性樹脂或熱塑性樹脂中的樹脂,例如預浸體(prepreg)、味之素構成
膜(Ajinomoto Build up Film,ABF)、FR-4、雙馬來醯亞胺三嗪(Bismaleimide Triazine,BT)、感光成像介電(photo imagable dielectric,PID)樹脂、一般覆銅層壓板(copper clad laminate,CCL)或者玻璃或陶瓷系絕緣材料。
For example, the
在其中介電層130a、130b、130c及130d的介電常數與絕緣構件140的介電常數被實作為彼此不同的情形中,介電層130a、130b、130c及130d可由Dk為5或大於5的玻璃、陶瓷、矽等形成,且絕緣構件140及至少一個絕緣層220可由具有相對低的Dk的覆銅層壓板(CCL)或預浸體形成。
In the case where the dielectric constants of the
另外,所述多個天線單元藉由利用鍍覆構件160可在具有有利於確保輻射圖案的邊界條件的同時改善在其他天線單元上的隔離。鍍覆構件160可藉由在所述多個天線單元被獨立地製造時一起製造而進行更自由地及更高效地設計。
In addition, by using the plated
舉例而言,鍍覆構件160可被設計成覆蓋天線單元的下表面以及側表面的至少一部分,從而改善在連接構件或積體電路上的隔離。
For example, the plating
另外,所述多個天線單元可包括:指向器構件110a、110b、110c及110d,指向器構件110a、110b、110c及110d被設置成在天線構件115a、115b、115c及115d中的每一者的上表面的方向上彼此間隔開,且被配置成與天線構件115a、115b、115c及115d一起傳送或接收射頻訊號。所述多個天線單元可易於提供指向器構件110a、110b、110c及110d的佈局空間。
In addition, the plurality of antenna units may include:
舉例而言,天線模組的增益或頻寬可隨著指向器構件110a、110b、110c及110d的數目增加而為大的,但由於介電層130a、130b、130c及130d中的每一者的高度會隨著指向器構件110a、110b、110c及110d的數目增加而增加,因此介電層130a、130b、130c及130d的實作困難度會增加。然而,由於所述多個天線單元可相對於連接構件200被獨立地製造,因此所述多個天線單元可易於實作高度較絕緣構件140的高度高的介電層130a、130b、130c及130d,且可易於包括指向器構件110a、110b、110c及110d。
For example, the gain or bandwidth of the antenna module can be larger as the number of the
端視設計而定,由於所述多個天線單元可彼此獨立地製造,因此所述多個天線單元可被設計成具有不同的特性。舉例而言,所述多個天線單元中的每一者可包括分別由不同材料形成為具有不同介電常數的介電層。此處,具有相對高的介電常數的天線單元可設置於靠近天線模組中心的位置處,且具有相對高的耐久性的天線單元可設置於靠近天線模組邊緣的位置處。 Depending on the design, since the multiple antenna units can be manufactured independently of each other, the multiple antenna units can be designed to have different characteristics. For example, each of the plurality of antenna units may include dielectric layers formed of different materials to have different dielectric constants. Here, the antenna unit with a relatively high dielectric constant may be disposed near the center of the antenna module, and the antenna unit with relatively high durability may be disposed near the edge of the antenna module.
在所述多個天線單元設置於連接構件200的上表面上之後,可在所述多個天線單元上設置包封構件150。當包封構件150是以液態進行施用時,包封構件150可滲入所述多個天線單元之間,或可滲入所述多個天線單元與絕緣構件140之間。在包封構件150滲入之後,包封構件150可被固化成固態。因此,儘管所述多個天線單元是插入的,包封構件150可改善天線模組的結構穩定性。同時,包封構件150可由感光成像包封體(photo imageable encapsulant,PIE)、味之素構成膜(ABF)等形成,但並非僅限於
此。
After the plurality of antenna units are disposed on the upper surface of the
圖2A至圖2C是分別示出天線模組的天線單元的實例的視圖。 2A to 2C are views respectively showing examples of antenna units of the antenna module.
參照圖2A,天線單元可包括指向器構件110e、天線構件115e、饋通孔、電性連接結構、介電層130e及鍍覆構件160e中的至少部分。此處,鍍覆構件160e可被設置成僅環繞天線單元的側表面。亦即,天線單元的下表面可被設置於連接構件的上表面上的接地圖案覆蓋。
2A, the antenna unit may include at least part of a
參照圖2B,天線單元可包括指向器構件110f、天線構件115f、饋通孔120f、電性連接結構125f、介電層130f及鍍覆構件160f中的至少部分。此處,鍍覆構件160f可被設置成僅覆蓋天線單元的下表面的一部分。亦即,天線單元的側表面可不被設置於連接構件上的絕緣構件的側表面上的鍍覆構件環繞。
2B, the antenna unit may include at least part of a
參照圖2C,天線單元可包括指向器構件110g、饋通孔120g、電性連接結構125g及介電層130g中的至少部分。亦即,天線單元的側表面可不被設置於連接構件上的絕緣構件的側表面上的鍍覆構件環繞,且天線單元的下表面可被設置於連接構件的上表面上的接地圖案覆蓋。
2C, the antenna unit may include at least part of a
同時,天線構件115e、115f及指向器構件110g中的每一者的形狀可為多邊形形狀或圓形形狀,但並非僅限於此。
Meanwhile, the shape of each of the
圖3A是示出形成天線單元的下表面鍍覆構件及電性連接結構的視圖,圖3B是示出形成天線單元的天線構件的視圖,且 圖3C是示出形成天線單元的饋通孔的視圖。 3A is a view showing the lower surface plating member and the electrical connection structure forming the antenna unit, and FIG. 3B is a view showing the antenna member forming the antenna unit, and Fig. 3C is a view showing a feed-through hole forming an antenna unit.
參照圖3A,可在基底10h上設置介電層130h、電性連接結構125h及鍍覆構件160h。舉例而言,電性連接結構125h及鍍覆構件160h可根據負刑(negative)或正型(positive)印刷方法來形成,且可包含金屬材料(例如,例如銅(Cu)、鋁(Al)、銀(Ag)、錫(Sn)、金(Au)、鎳(Ni)、鉛(Pb)、鈦(Ti)或其合金等導電材料)。
Referring to FIG. 3A, a
參照圖3B,可在基底10i上設置介電層130i及天線構件115i。舉例而言,天線構件115i可根據負型或正型印刷方法來形成。亦可利用與天線構件115i相同的方式來形成指向器構件。
3B, a
參照圖3C,可在基底10j上設置介電層130j及饋通孔120j。舉例而言,饋通孔120j可根據負型或正型印刷方法來形成,且可重複地堆疊。
Referring to FIG. 3C, a
同時,天線構件115i、饋通孔120j、電性連接結構125h及鍍覆構件160h可藉由例如化學氣相沈積(chemical vapor deposition,CVD)、物理氣相沈積(physical vapor deposition,PVD)、濺鍍、減成製程、加成製程、半加成製程(semi-additive process,SAP)、經修改半加成製程(modified semi-additive process,MSAP)等鍍覆方法來形成,但並非僅限於此。
At the same time, the
圖3D至圖3G是示出製造天線模組的天線單元的製程的視圖。 3D to 3G are views showing the manufacturing process of the antenna unit of the antenna module.
參照圖3D,可在基底10k上設置包括介電層131k、電
性連接結構125k及鍍覆構件160k的第一層,且可在所述第一層上設置包括饋通孔120k及介電層132k的第二層。
3D, may be provided on the
參照圖3E,可重複地堆疊分別包括饋通孔及介電層133k的第三層至第n層,且可在第n層上設置包括天線構件115k及介電層134k的第(n+1)層。
3E, the third layer to the nth layer including the feedthrough hole and the
參照圖3F,可在第(n+1)層上設置包括指向器構件110k的第(n+2)層。第一層至第(n+2)層中所包括的全部介電層可整合至單一介電層130k中。
Referring to FIG. 3F, the (n+2)th layer including the
參照圖3G,可將其中形成有指向器構件110l的部分、天線構件115l的部分、饋通孔120l的部分、電性連接結構125l的部分及鍍覆構件160l的部分的天線單元插入U形基底10l中,且然後可形成鍍覆構件160l的其他部分。可將天線單元在經旋轉狀態下重新插入U形基底10l中,且然後可形成鍍覆構件160l的剩餘部分。同時,U形基底10l可為夾具,但並非僅限於此。
Referring to FIG. 3G, the part where the
圖4A至圖4F是示出根據本揭露中的示例性實施例的天線模組的製造方法的視圖。 4A to 4F are views showing a method of manufacturing an antenna module according to an exemplary embodiment in the present disclosure.
參照圖4A,可對絕緣構件140m的一部分進行蝕刻以提供所述多個天線單元插入其中的插入空間,且可在絕緣構件140m下方設置膜170m。
4A, a part of the insulating
參照圖4B,可將包括指向器構件110m、天線構件115m、饋通孔120m、介電層130m及鍍覆構件160m的天線單元插入絕緣構件140m的插入空間中。
4B, the antenna unit including the
參照圖4C,可在天線單元及絕緣構件140m上設置包封構件150m。包封構件150m可滲入天線單元與絕緣構件140m之間。
Referring to FIG. 4C, an encapsulating
參照圖4D,在包封構件150m被固化之後可移除膜170m。
Referring to FIG. 4D, the
參照圖4E,可在天線單元下方形成包括至少一個配線層210m、至少一個絕緣層220m及配線通孔230m的連接構件。舉例而言,在將至少一個配線層210m形成為對應於天線單元的佈局位置之後,可將連接構件附接至天線單元的下端。
Referring to FIG. 4E, a connection member including at least one
參照圖4F,可將連接墊240m連接至配線通孔230m,且鈍化層250m可覆蓋連接構件的下端。
4F, the
圖5至圖7是示出根據本揭露中的示例性實施例的天線模組的另一實例的視圖。 5 to 7 are views showing another example of the antenna module according to the exemplary embodiment in the present disclosure.
參照圖5,包括指向器構件110n、天線構件115n、饋通孔120n及介電層130n的天線單元以及絕緣構件140n可設置於包括至少一個配線層210n、至少一個絕緣層220n、配線通孔230n、連接墊240n及鈍化層250n的連接構件的上表面上。包封構件150n可設置於天線單元及絕緣構件140n上。包封構件150n可滲入天線單元與絕緣構件140n之間。
5, an antenna unit including a
射頻訊號可經由至少一個配線層210n被傳送至天線單元,且可在天線模組的上表面的方向上傳送,並且由天線單元接收的射頻訊號可經由至少一個配線層210n被傳送至積體電路300n。
The radio frequency signal can be transmitted to the antenna unit through at least one
積體電路300n可包括主動面310n及非主動面320n。積
體電路300n可藉由主動面310n電性連接至連接墊240n,且可設置於連接構件的下表面上。亦即,由於積體電路300n可被設置成面朝上,因此至天線構件115n的電性距離可縮短,且射頻訊號的傳送損耗可減少。
The
積體電路300n的非主動面320n可連接至金屬構件330n。金屬構件330n可輻射自積體電路300n產生的熱或為積體電路300n提供接地。
The
被動組件350n可電性連接至連接墊240n且可設置於連接構件的下表面上,並且可為積體電路300n或天線單元提供阻抗。舉例而言,被動組件350n可包括多層陶瓷電容器(multilayer ceramic capacitor,MLCC)、電感器或晶片電阻器的至少一部分。
The
核心通孔360n的一端可電性連接至連接墊240n,且可設置於連接構件的下表面上,並且核心通孔360n的另一端可連接至電性連接結構340n。
One end of the core through
舉例而言,核心通孔360n可自電性連接結構340n接收基礎訊號(例如,電力、低頻訊號等),且可將所述基礎訊號提供至積體電路300n。積體電路300n可藉由利用基礎訊號執行頻率轉換、放大及濾波相位控制來產生毫米波(mmWave)頻帶的射頻訊號,且可將所述射頻訊號傳送至天線單元。舉例而言,射頻訊號的頻率可為28吉赫茲(GHz)及/或36吉赫茲,但並非僅限於此,且可根據天線模組的通訊方案而變化。
For example, the core via 360n can receive basic signals (for example, power, low-frequency signals, etc.) from the
同時,積體電路300n及被動組件350n可被包封體包封。
At the same time, the
參照圖6,包括指向器構件110o、天線構件115o、饋通孔120o及介電層130o的天線單元以及絕緣構件140o可設置於包括至少一個配線層210o、至少一個絕緣層220o、配線通孔230o、連接墊240o及鈍化層250o的連接構件的上表面上。包封構件150o可設置於天線單元及絕緣構件140o上。包封構件150o可滲入天線單元與絕緣構件140o之間。 6, an antenna unit including a director member 110o, an antenna member 115o, a feed-through hole 120o, and a dielectric layer 130o, and an insulating member 140o may be provided at least one wiring layer 210o, at least one insulating layer 220o, and wiring vias 230o. , The connection pad 240o and the passivation layer 250o on the upper surface of the connection member. The encapsulating member 150o may be disposed on the antenna unit and the insulating member 140o. The encapsulating member 150o may penetrate between the antenna unit and the insulating member 140o.
包括主動面310o及非主動面320o的積體電路300o可電性連接至連接墊240o,且可設置於連接構件的下表面上。非主動面320o可連接至金屬構件330o。 The integrated circuit 300o including the active surface 310o and the inactive surface 320o can be electrically connected to the connection pad 240o, and can be disposed on the lower surface of the connection member. The inactive surface 320o may be connected to the metal member 330o.
積體電路300o可慮及高頻特性而由化合物半導體(例如,GaAs)形成,或由矽半導體形成。 The integrated circuit 300o may be formed of a compound semiconductor (for example, GaAs) in consideration of high frequency characteristics, or may be formed of a silicon semiconductor.
積體電路300o可被包封體包封。包封體可保護積體電路300o不受外部電性/物理/化學影響,且可由感光成像包封體(PIE)、味之素構成膜(ABF)、環氧模製化合物(epoxy molding compound,EMC)等形成,但並非僅限於此。 The integrated circuit 300o can be enclosed by an encapsulating body. The encapsulant can protect the integrated circuit 300o from external electrical/physical/chemical influences, and can be composed of a photosensitive imaging encapsulant (PIE), Ajinomoto film (ABF), epoxy molding compound, EMC), but not limited to this.
電性連接結構340o可設置於包封體的下表面上。 The electrical connection structure 340o may be disposed on the lower surface of the encapsulation body.
被動組件350o可連接至電性連接結構340o。 The passive component 350o can be connected to the electrical connection structure 340o.
核心通孔360o的一端及另一端可分別連接至核心配線層,且所述核心配線層可分別連接至連接墊240o或電性連接結構340o,且橫向延伸成亦連接至另一核心通孔360o。 One end and the other end of the core via 360o can be respectively connected to the core wiring layer, and the core wiring layer can be respectively connected to the connection pad 240o or the electrical connection structure 340o, and extends laterally to also be connected to another core via 360o .
參照圖7,包括指向器構件110p、天線構件115p、饋通孔120p及介電層130p的天線單元以及絕緣構件140p可設置於包
括至少一個配線層210p、至少一個絕緣層220p、配線通孔230p、連接墊240p及鈍化層250p的連接構件的上表面上。包封構件150p可設置於天線單元及絕緣構件140p上。包封構件150p可滲入天線單元與絕緣構件140p之間。
Referring to FIG. 7, an antenna unit including a
包括主動面310p及非主動面320p的積體電路300p可電性連接至連接墊240p,且可設置於連接構件的下表面上。非主動面320p可連接至金屬構件330p。
The
積體電路300p可被包封體包封且電性連接結構340p可設置於包封體的下表面上。電性連接結構340p可連接至核心通孔360p。
The
由於天線單元是獨立地製造且然後設置於連接構件的上表面上,因此絕緣構件140p可進行更自由地機械加工,且可包括容置空間。
Since the antenna unit is independently manufactured and then disposed on the upper surface of the connecting member, the insulating
被動組件350p可設置於絕緣構件140p的容置空間中。因此,天線模組中連接構件的下表面的尺寸可減小,且由被動組件350p向天線構件115p提供的阻抗可更準確地匹配。
The
同時,被配置成在天線模組的側表面方向上傳送或接收第二射頻訊號的第二天線構件(圖中未示出)亦可設置於絕緣構件140p的容置空間中。所述第二天線構件可被實作為偶極天線或單極天線。
At the same time, a second antenna member (not shown in the figure) configured to transmit or receive a second radio frequency signal in the direction of the side surface of the antenna module may also be disposed in the accommodating space of the insulating
同時,圖5至圖7所示的設置於連接構件的下表面上的組件(積體電路、包封體、被動組件、核心通孔等)與扇出型半導 體封裝一樣可被獨立地製造,且然後可接合至連接構件,並且可視設計而與連接構件製造於一起而無需接合製程。 At the same time, the components (integrated circuit, encapsulation, passive components, core vias, etc.) and fan-out semiconductors arranged on the lower surface of the connecting member shown in FIGS. 5 to 7 The bulk package can also be independently manufactured, and then can be joined to the connecting member, and can be manufactured together with the connecting member according to the design without a joining process.
圖8是示出根據本揭露中的示例性實施例的天線模組的實例的上表面的示意圖。 FIG. 8 is a schematic diagram showing an upper surface of an example of an antenna module according to an exemplary embodiment in the present disclosure.
參照圖8,多個指向器構件110a、110b、110c、110d、110e、110f、110g、110h、110i、110j、110k、110l、110m、110n、110o及110p中的每一者可具有塊狀天線的形式,且可被多個鍍覆構件160a、160b、160c、160d、160e、160f、160g、160h、160i、160j、160k、160l、160m、160n、160o及160p中的對應的鍍覆構件環繞。若天線模組不包括指向器構件,則所述多個指向器構件110a、110b、110c、110d、110e、110f、110g、110h、110i、110j、110k、110l、110m、110n、110o及110p可被替換為多個天線構件。
Referring to FIG. 8, a plurality of
圖9是示出根據本揭露中的示例性實施例的天線模組的另一實例的上表面的示意圖。 FIG. 9 is a schematic diagram showing the upper surface of another example of the antenna module according to the exemplary embodiment in the present disclosure.
參照圖9,多個指向器構件110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8及110-9中的每一者可被對應的鍍覆構件160-1、160-2、160-3、160-4、160-6、160-7、160-8及160-9以及多個屏蔽通孔190-1、190-2、190-3、190-4、190-5、190-6、190-7、190-8及190-9中的至少一者環繞。若天線模組不包括指向器構件,則所述多個指向器構件110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8及110-9可被替換為多個天線構件。 Referring to Figure 9, each of the plurality of pointer members 110-1, 110-2, 110-3, 110-4, 110-5, 110-6, 110-7, 110-8, and 110-9 may Corresponding plated members 160-1, 160-2, 160-3, 160-4, 160-6, 160-7, 160-8 and 160-9 and multiple shielding through holes 190-1, 190-2 , 190-3, 190-4, 190-5, 190-6, 190-7, 190-8, and 190-9 surround at least one. If the antenna module does not include a pointer member, the plurality of pointer members 110-1, 110-2, 110-3, 110-4, 110-5, 110-6, 110-7, 110-8 and 110-9 can be replaced with multiple antenna members.
亦即,設置於天線模組的連接構件上的所述多個天線單 元的側表面的一部分可被所述多個屏蔽通孔而非鍍覆構件環繞。 That is, the multiple antenna units provided on the connecting member of the antenna module A part of the side surface of the element may be surrounded by the plurality of shielding through holes instead of the plating member.
同時,圖8及圖9所示的所述多個指向器構件或所述多個天線構件的數目、佈局及形狀不受特別限制。舉例而言,圖8所示所述多個指向器構件的形狀可為矩形,且圖9所示所述多個指向器構件的數目可為九個。 Meanwhile, the number, layout and shape of the plurality of pointer members or the plurality of antenna members shown in FIGS. 8 and 9 are not particularly limited. For example, the shape of the plurality of pointer members shown in FIG. 8 may be rectangular, and the number of the plurality of pointer members shown in FIG. 9 may be nine.
同時,本說明書中所揭露的連接構件的下端(對應於積體電路、包封體、被動組件及核心通孔)可根據扇出型半導體封裝來實作。為了有利於理解扇出型半導體封裝,將參照圖10至圖17進行闡述。 At the same time, the lower end of the connecting member (corresponding to the integrated circuit, the encapsulation body, the passive component and the core through hole) disclosed in this specification can be implemented according to a fan-out semiconductor package. In order to facilitate the understanding of the fan-out semiconductor package, it will be described with reference to FIGS. 10 to 17.
圖10是示出電子裝置系統的實例的示意性方塊圖。 FIG. 10 is a schematic block diagram showing an example of an electronic device system.
參照圖10,電子裝置1000中可容置有主板1010。主板1010可包括實體連接至或電性連接至主板1010的晶片相關組件1020、網路相關組件1030、其他組件1040等。這些組件可連接至以下將闡述的其他組件,以形成各種訊號線1090。
Referring to FIG. 10, a motherboard 1010 can be accommodated in the
晶片相關組件1020可包括:記憶體晶片,例如揮發性記憶體(例如,動態隨機存取記憶體(dynamic random access memory,DRAM))、非揮發性記憶體(例如,唯讀記憶體(read only memory,ROM))、快閃記憶體等;應用處理器晶片,例如中央處理器(例如,中央處理單元(central processing unit,CPU))、圖形處理器(例如,圖形處理單元(graphics processing unit,GPU))、數位訊號處理器、密碼處理器(cryptographic processor)、微處理器、微控制器等;及邏輯晶片,例如類比數位轉換器(analog-to-
digital converter,ADC)、應用專用積體電路(application-specific integrated circuit,ASIC)等。然而,晶片相關組件1020並非僅限於此,而是亦可包括其他類型的晶片相關組件。另外,晶片相關組件1020可彼此組合。
Chip related
網路相關組件1030可包括例如以下協定:無線保真(wireless fidelity,Wi-Fi)(電氣及電子工程師學會(Institute of Electrical And Electronics Engineers,IEEE)802.11家族等)、全球互通微波存取(worldwide interoperability for microwave access,WiMAX)(IEEE 802.16家族等)、IEEE 802.20、長期演進(long term evolution,LTE)、僅支援資料的演進(evolution data only,Ev-DO)、高速封包存取+(high speed packet access +,HSPA+)、高速下行封包存取+(high speed downlink packet access +,HSDPA+)、高速上行封包存取+(high speed uplink packet access +,HSUPA+)、增強型資料GSM環境(enhanced data GSM environment,EDGE)、全球行動通訊系統(global system for mobile communications,GSM)、全球定位系統(global positioning system,GPS)、通用封包無線電服務(general packet radio service,GPRS)、分碼多重存取(code division multiple access,CDMA)、分時多重存取(time division multiple access,TDMA)、數位增強型無線電訊(digital enhanced cordless telecommunications,DECT)、藍牙、3G協定、4G協定及5G協定以及繼上述協定之後指定的任何其他無線協定及有線協定。然而,網路相關組件1030並非僅限於此,
而是亦可包括多種其他無線標準或協定或者有線標準或協定。另外,網路相關組件1030可與上述晶片相關組件1020一起彼此組合。
The network-related
其他組件1040可包括高頻電感器、鐵氧體電感器(ferrite inductor)、功率電感器、鐵氧體珠粒、低溫共燒陶瓷(low temperature co-fired ceramic,LTCC)、電磁干擾(electromagnetic interference,EMI)濾波器、多層陶瓷電容器(multilayer ceramic capacitor,MLCC)等。然而,其他組件1040並非僅限於此,而是亦可包括用於各種其他目的的被動組件等。另外,其他組件1040可與上述晶片相關組件1020或網路相關組件1030一起相互組合。
視電子裝置1000的類型,電子裝置1000可包括可實體地連接至或電性地連接至主板1010或者可不實體地連接至或不電性地連接至主板1010的其他組件。這些其他組件可包括例如照相機模組1050、天線1060、顯示器裝置1070、電池1080、音訊編解碼器(圖中未示出)、視訊編解碼器(圖中未示出)、功率放大器(圖中未示出)、羅盤(圖中未示出)、加速度計(圖中未示出)、陀螺儀(圖中未示出)、揚聲器(圖中未示出)、大容量儲存單元(例如,硬碟驅動機)(圖中未示出)、光碟(compact disk,CD)驅動機(圖中未示出)、數位多功能光碟(digital versatile disk,DVD)驅動機(圖中未示出)等。然而,這些其他組件並非僅限於此,而是視電子裝置1000等的類型亦可包括用於各種目的的其他組件。
Depending on the type of the
電子裝置1000可為智慧型電話、個人數位助理(personal
digital assistant,PDA)、數位攝影機、數位照相機(digital still camera)、網路系統、電腦、監視器、平板個人電腦(tablet PC)、膝上型個人電腦、隨身型易網機個人電腦(netbook PC)、電視、視訊遊戲機(video game machine)、智慧型手錶、汽車組件等。然而,電子裝置1000並非僅限於此,而是亦可為處理資料的任何其他電子裝置。
The
圖11是示出電子裝置的實例的示意性立體圖。 FIG. 11 is a schematic perspective view showing an example of an electronic device.
參照圖11,電子裝置可為例如智慧型電話1100。在智慧型電話1100中,可採用半導體封裝形式來使用射頻積體電路(RFIC),且可採用基板或模組形式使用天線。射頻積體電路與天線可在智慧型電話1100中彼此電性連接,且因此可達成天線訊號在各個方向上的輻射R。包括射頻積體電路的半導體封裝及包括天線的基板或模組可在例如智慧型電話等電子裝置中以各種形式使用。
11, the electronic device may be, for example, a
一般而言,在半導體晶片中整合有諸多精細的電路。然而,半導體晶片本身無法用作成品的半導體產品,且可能因外部物理衝擊或化學衝擊而被損壞。因此,半導體晶片可能無法單獨使用,而是會以封裝狀態被封裝以及使用於電子裝置等中。 Generally speaking, many fine circuits are integrated in a semiconductor chip. However, the semiconductor wafer itself cannot be used as a finished semiconductor product, and may be damaged due to external physical or chemical shocks. Therefore, the semiconductor chip may not be used alone, but will be packaged in a packaged state and used in electronic devices and the like.
此處,由於半導體晶片與電子裝置的主板之間存在電性連接方面的電路寬度(circuit width)差,因此需要進行半導體封裝。詳言之,半導體晶片的連接墊的尺寸及半導體晶片的各連接墊之間的間隔是非常精細的,但在電子裝置中使用的主板的組件安 裝墊的尺寸及主板的各組件安裝墊之間的間隔顯著地大於半導體晶片的連接墊的尺寸及各連接墊之間的間隔。因此,可能難以將半導體晶片直接安裝於主板上,且需要用於緩衝半導體晶片與主板之間的電路寬度差的封裝技術。 Here, since there is a circuit width difference in electrical connection between the semiconductor chip and the motherboard of the electronic device, semiconductor packaging is required. In detail, the size of the connection pads of the semiconductor chip and the spacing between the connection pads of the semiconductor chip are very fine, but the components of the motherboard used in the electronic device are very fine. The size of the mounting pads and the spacing between the component mounting pads of the motherboard are significantly larger than the size of the connecting pads of the semiconductor chip and the spacing between the connecting pads. Therefore, it may be difficult to directly mount the semiconductor chip on the main board, and a packaging technology for buffering the difference in circuit width between the semiconductor chip and the main board is required.
視半導體封裝的結構及目的,利用封裝技術製造的半導體封裝可被劃分成扇入型半導體封裝或扇出型半導體封裝。 Depending on the structure and purpose of the semiconductor package, semiconductor packages manufactured by packaging technology can be divided into fan-in semiconductor packages or fan-out semiconductor packages.
在下文中,將參照圖式更詳細地闡述所述扇入型半導體封裝及所述扇出型半導體封裝。 Hereinafter, the fan-in semiconductor package and the fan-out semiconductor package will be described in more detail with reference to the drawings.
圖12A及圖12B是示出扇入型半導體封裝在被封裝之前及被封裝之後的狀態的示意性剖視圖。 12A and 12B are schematic cross-sectional views showing the state of the fan-in semiconductor package before and after being packaged.
圖13是示出扇入型半導體封裝的封裝製程的示意性剖視圖。 FIG. 13 is a schematic cross-sectional view showing the packaging process of the fan-in semiconductor package.
參照圖12A、圖12B及圖13,半導體晶片2220可為例如處於裸露狀態下的積體電路(integrated circuit,IC),半導體晶片2220包括:本體2221,包含矽(Si)、鍺(Ge)、砷化鎵(GaAs)等;連接墊2222,形成於本體2221的一個表面上且包含例如鋁(Al)等導電材料;以及例如氧化物膜、氮化物膜等鈍化層2223,形成於本體2221的一個表面上且覆蓋連接墊2222的至少部分。在此種情形中,由於連接墊2222是顯著小的,因此難以將積體電路(IC)安裝於中間階層的印刷電路板(printed circuit board,PCB)上以及電子裝置的主板上等。
12A, 12B and FIG. 13, the
因此,連接構件2240可視半導體晶片2220的尺寸而形
成於半導體晶片2220上以對連接墊2222進行重佈線。可藉由以下步驟來形成連接構件2240:利用例如感光成像介電(PID)樹脂等絕緣材料在半導體晶片2220上形成絕緣層2241;形成使連接墊2222開口的通孔孔洞2243h;且接著形成配線圖案2242及通孔2243。接著,可形成保護連接構件2240的鈍化層2250、可形成開口2251及可形成凸塊下金屬層2260等。亦即,可藉由一系列製程來製造包括例如半導體晶片2220、連接構件2240、鈍化層2250及凸塊下金屬層2260的扇入型半導體封裝2200。
Therefore, the connecting
如上所述,扇入型半導體封裝可以具有其中半導體晶片的所有連接墊(例如輸入/輸出(input/output,I/O)端子等)均設置於半導體晶片的內部的封裝形式,可具有優異的電性特性且可以低成本進行生產。因此,已以扇入型半導體封裝形式製造出安裝於智慧型電話中的諸多元件。詳言之,已開發出安裝於智慧型電話中的諸多元件以在具有緊密尺寸的同時實作快速訊號轉移。 As described above, the fan-in semiconductor package may have a package form in which all the connection pads of the semiconductor chip (for example, input/output (I/O) terminals, etc.) are provided inside the semiconductor chip, and may have excellent It has electrical characteristics and can be produced at low cost. Therefore, many components installed in smart phones have been manufactured in the form of fan-in semiconductor packages. In detail, many components installed in smart phones have been developed to implement fast signal transfer while having a compact size.
然而,由於所有的輸入/輸出端子均需要設置於扇入型半導體封裝中的半導體晶片內,因此扇入型半導體封裝具有大的空間限制。因此,難以將此結構應用於具有大量輸入/輸出端子的半導體晶片或具有緊密尺寸的半導體晶片。另外,由於上述缺點,扇入型半導體封裝可能無法在電子裝置的主板上直接安裝及使用。原因在於,即使在藉由重佈線製程增大了半導體晶片的輸入/輸出端子的尺寸及半導體晶片的各輸入/輸出端子之間的間隔的情形中,半導體晶片的輸入/輸出端子的尺寸及半導體晶片的各輸入/輸出 端子之間的間隔可能仍不足以將扇入型半導體封裝直接安裝於電子裝置的主板上。 However, since all input/output terminals need to be provided in the semiconductor chip in the fan-in semiconductor package, the fan-in semiconductor package has a large space limitation. Therefore, it is difficult to apply this structure to a semiconductor wafer having a large number of input/output terminals or a semiconductor wafer having a compact size. In addition, due to the above shortcomings, the fan-in semiconductor package may not be directly mounted and used on the motherboard of the electronic device. The reason is that even in the case where the size of the input/output terminals of the semiconductor chip and the interval between the input/output terminals of the semiconductor chip are increased by the rewiring process, the size of the input/output terminals of the semiconductor chip and the semiconductor chip Input/output of the chip The spacing between the terminals may still be insufficient to directly mount the fan-in semiconductor package on the motherboard of the electronic device.
圖14是示出其中扇入型半導體封裝安裝於中介基板上且最終安裝於電子裝置的主板上的情形的示意性剖視圖。 14 is a schematic cross-sectional view showing a situation in which a fan-in type semiconductor package is mounted on an intermediate substrate and finally mounted on a main board of an electronic device.
圖15是示出其中扇入型半導體封裝嵌置於中介基板中且最終安裝於電子裝置的主板上的情形的示意性剖視圖。 15 is a schematic cross-sectional view showing a situation in which a fan-in type semiconductor package is embedded in an intermediate substrate and finally mounted on a main board of an electronic device.
參照圖14及圖15,在扇入型半導體封裝2200中,半導體晶片2220的連接墊2222(即,輸入/輸出端子)可經由中介基板2301進行重佈線,且扇入型半導體封裝2200可在扇入型半導體封裝2200安裝於中介基板2301上的狀態下最終安裝於電子裝置的主板2500上。在此種情形中,可藉由底部填充樹脂2280等來固定焊球2270等,且半導體晶片2220的外側可以模製材料2290等覆蓋。作為另外一種選擇,扇入型半導體封裝2200可嵌置於單獨的中介基板2302中,半導體晶片2220的連接墊2222(即,輸入/輸出端子)可在其中扇入型半導體封裝2200嵌置於中介基板2302中的狀態下藉由中介基板2302進行重佈線,且扇入型半導體封裝2200可最終安裝於電子裝置的主板2500上。
14 and 15, in the fan-in
如上所述,可能難以在電子裝置的主板上直接安裝並使用扇入型半導體封裝。因此,扇入型半導體封裝可安裝於單獨的中介基板上且接著藉由封裝製程安裝於電子裝置的主板上,或者可在其中扇入型半導體封裝嵌置於中介基板中的狀態下在電子裝置的主板上安裝及使用。 As described above, it may be difficult to directly mount and use a fan-in type semiconductor package on the motherboard of an electronic device. Therefore, the fan-in semiconductor package can be mounted on a separate intermediate substrate and then mounted on the main board of the electronic device by the packaging process, or can be installed in the electronic device in a state in which the fan-in semiconductor package is embedded in the intermediate substrate. Install and use on the motherboard.
圖16是示出扇出型半導體封裝的示意性剖視圖。 FIG. 16 is a schematic cross-sectional view showing a fan-out type semiconductor package.
參照圖16,在扇出型半導體封裝2100中,舉例而言,半導體晶片2120的外側可受到包封體2130的保護,且半導體晶片2120的連接墊2122可藉由連接構件2140而被朝向半導體晶片2120之外進行重佈線。在此種情形中,在連接構件2140上可進一步形成鈍化層2150,且在鈍化層2150的開口中可進一步形成凸塊下金屬層2160。在凸塊下金屬層2160上可進一步形成焊球2170。半導體晶片2120可為包括本體2121、連接墊2122、鈍化層(圖中未示出)等的積體電路(IC)。連接構件2140可包括絕緣層2141、形成於絕緣層2141上的重佈線層2142及將連接墊2122與重佈線層2142電性連接至彼此的通孔2143。
16, in the fan-out
如上所述,所述扇出型半導體封裝可具有其中半導體晶片的輸入/輸出端子藉由形成於所述半導體晶片上的連接構件而朝向所述半導體晶片之外進行重佈線並設置的形式。如上所述,在扇入型半導體封裝中,半導體晶片的所有輸入/輸出端子均需要設置於所述半導體晶片內。因此,當半導體晶片的尺寸減小時,需要減小球的尺寸及各球之間的節距,進而使得可能無法在扇入型半導體封裝中使用標準化球佈局。在另一方面,扇出型半導體封裝具有其中半導體晶片的輸入/輸出端子如上所述藉由形成於所述半導體晶片上的連接構件而朝向所述半導體晶片之外進行重佈線並設置的形式。因此,即使在半導體晶片的尺寸減小的情形中,照樣可在扇出型半導體封裝中使用標準化球佈局,進而使得所述扇出型半 導體封裝可在不使用單獨的中介基板的條件下安裝於電子裝置的主板上,如以下所闡述。 As described above, the fan-out type semiconductor package may have a form in which the input/output terminals of the semiconductor chip are rewired and arranged toward the outside of the semiconductor chip by the connecting member formed on the semiconductor chip. As described above, in a fan-in semiconductor package, all input/output terminals of the semiconductor chip need to be provided in the semiconductor chip. Therefore, when the size of the semiconductor wafer is reduced, it is necessary to reduce the size of the balls and the pitch between the balls, which may make it impossible to use a standardized ball layout in a fan-in semiconductor package. On the other hand, the fan-out type semiconductor package has a form in which the input/output terminals of the semiconductor chip are rewired and arranged toward the outside of the semiconductor chip by the connecting members formed on the semiconductor chip as described above. Therefore, even in the case that the size of the semiconductor wafer is reduced, the standardized ball layout can still be used in the fan-out semiconductor package, thereby making the fan-out semi- The conductor package can be mounted on the main board of the electronic device without using a separate intermediate substrate, as explained below.
圖17是示出其中扇出型半導體封裝安裝於電子裝置的主板上的情形的示意性剖視圖。 FIG. 17 is a schematic cross-sectional view showing a situation in which a fan-out type semiconductor package is mounted on a main board of an electronic device.
參照圖17,扇出型半導體封裝2100可藉由焊球2170等而安裝於電子裝置的主板2500上。亦即,如上所述,扇出型半導體封裝2100包括連接構件2140,連接構件2140形成於半導體晶片2120上且能夠將連接墊2122重佈線至在半導體晶片2120的尺寸之外的扇出區,進而使得照樣可在扇出型半導體封裝2100中使用標準化球佈局。因此,扇出型半導體封裝2100可在不使用單獨的中介基板等的條件下安裝於電子裝置的主板2500上。
Referring to FIG. 17, the fan-out
如上所述,由於所述扇出型半導體封裝可在不使用單獨的中介基板的條件下安裝於電子裝置的主板上,因此所述扇出型半導體封裝可被實作成具有較使用中介基板的扇入型半導體封裝的厚度小的厚度。因此,所述扇出型半導體封裝可被微型化及薄化。另外,所述扇出型半導體封裝具有優異的熱特性及電性特性,進而使得所述扇出型半導體封裝尤其適合用於行動產品。因此,所述扇出型半導體封裝可被實作成較使用印刷電路板(PCB)的一般疊層封裝(package-on-package,POP)型的形式更為緊密的形式,且可解決因出現翹曲(warpage)現象而產生的問題。 As described above, since the fan-out semiconductor package can be mounted on the motherboard of an electronic device without using a separate interposer substrate, the fan-out semiconductor package can be implemented as a fan with a larger interposer substrate. The thickness of the in-type semiconductor package is small. Therefore, the fan-out semiconductor package can be miniaturized and thinned. In addition, the fan-out semiconductor package has excellent thermal and electrical characteristics, which makes the fan-out semiconductor package particularly suitable for mobile products. Therefore, the fan-out semiconductor package can be implemented in a more compact form than the general package-on-package (POP) form using a printed circuit board (PCB), and can solve the problem of warping. Problems caused by warpage phenomenon.
同時,所述扇出型半導體封裝指代用於上述將半導體晶片安裝於電子裝置等的主板上且保護所述半導體晶片不受外部影 響的封裝技術,且所述扇出型半導體封裝是與例如中介基板等印刷電路板(PCB)的概念不同的概念,所述印刷電路板具有與扇出型半導體封裝的規格、目的等不同的規格、目的等,且所述印刷電路板中嵌置有扇入型半導體封裝。 Meanwhile, the fan-out semiconductor package refers to the above-mentioned semiconductor chip mounting on the motherboard of an electronic device and the like and protecting the semiconductor chip from external influences. Packaging technology, and the fan-out semiconductor package is a concept different from the concept of a printed circuit board (PCB) such as an interposer substrate. The printed circuit board has a different specification and purpose from the fan-out semiconductor package. Specifications, purpose, etc., and a fan-in semiconductor package is embedded in the printed circuit board.
如上所述,根據本揭露中的示例性實施例,天線模組可在使用所述多個天線單元提供能夠易於確保天線效能的環境來改善射頻訊號的傳送及接收效能的同時易於微型化。 As described above, according to the exemplary embodiments of the present disclosure, the antenna module can be easily miniaturized while using the plurality of antenna units to provide an environment that can easily ensure antenna performance to improve the transmission and reception performance of radio frequency signals.
儘管以上已示出並闡述了示例性實施例,然而,對熟習此項技術者而言將顯而易見的是,在不背離由隨附申請專利範圍所界定的本發明的範圍的條件下,可作出修改及變型。 Although exemplary embodiments have been shown and described above, it will be obvious to those skilled in the art that, without departing from the scope of the present invention defined by the scope of the appended patent application, Modifications and modifications.
100:天線封裝 100: antenna package
110a、110b、110c、110d:指向器構件 110a, 110b, 110c, 110d: Pointer components
115a、115b、115c、115d:天線構件 115a, 115b, 115c, 115d: antenna components
120a、120b、120c、120d:饋通孔 120a, 120b, 120c, 120d: feedthrough hole
125d:電性連接結構 125d: electrical connection structure
130a、130b、130c、130d:介電層 130a, 130b, 130c, 130d: dielectric layer
140:絕緣構件 140: Insulating member
150:包封構件 150: Encapsulation member
160:鍍覆構件 160: plated components
200:連接構件 200: connecting member
210:配線層 210: Wiring layer
220:絕緣層 220: insulating layer
230:配線通孔 230: Wiring through hole
240:連接墊 240: connection pad
250:鈍化層 250: passivation layer
Claims (20)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0091120 | 2017-07-18 | ||
??10-2017-0091120 | 2017-07-18 | ||
KR20170091120 | 2017-07-18 | ||
KR10-2017-0146113 | 2017-11-03 | ||
KR1020170146113A KR102019952B1 (en) | 2017-07-18 | 2017-11-03 | Antenna module and manufacturing method thereof |
??10-2017-0146113 | 2017-11-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201909475A TW201909475A (en) | 2019-03-01 |
TWI698044B true TWI698044B (en) | 2020-07-01 |
Family
ID=65269664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107113765A TWI698044B (en) | 2017-07-18 | 2018-04-24 | Antenna module and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
KR (3) | KR102019952B1 (en) |
TW (1) | TWI698044B (en) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102066904B1 (en) | 2018-09-18 | 2020-01-16 | 삼성전자주식회사 | Antenna module |
KR102163419B1 (en) * | 2019-02-08 | 2020-10-08 | 삼성전기주식회사 | Chip antenna module |
JP6888222B2 (en) | 2019-02-08 | 2021-06-16 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Chip antenna module |
KR102762396B1 (en) * | 2019-02-14 | 2025-02-05 | 삼성전자주식회사 | An interposer and an electronic device including the same |
US11502402B2 (en) | 2019-03-15 | 2022-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated patch antenna having insulating substrate with antenna cavity and high-K dielectric |
KR102587772B1 (en) * | 2019-03-21 | 2023-10-12 | 삼성전자주식회사 | Antenna structure including transmission line transitting and feeding multiple frequency band and electronic device including the antenna structure |
CN112152658B (en) * | 2019-06-27 | 2022-07-08 | Oppo广东移动通信有限公司 | Electronic equipment and protective sleeve |
KR102137093B1 (en) | 2019-08-05 | 2020-07-23 | 삼성전기주식회사 | Antenna module and electronic device including thereof |
KR102387748B1 (en) * | 2019-08-05 | 2022-04-15 | 삼성전기주식회사 | Antenna module and electronic device including thereof |
KR102603106B1 (en) | 2019-09-04 | 2023-11-15 | 삼성전기주식회사 | Array antenna |
US11114745B2 (en) | 2019-09-30 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Antenna package for signal transmission |
DE102019134673A1 (en) * | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co. Ltd. | ANTENNA PACKAGE FOR SIGNAL TRANSMISSION |
CN111403356B (en) * | 2020-04-02 | 2024-08-02 | 杭州晶通科技有限公司 | Preparation technology of fan-out type packaging structure of modularized antenna |
KR20220006246A (en) | 2020-07-08 | 2022-01-17 | 삼성전기주식회사 | Radio frequency package |
KR102762870B1 (en) | 2020-07-09 | 2025-02-07 | 삼성전기주식회사 | Antenna module |
KR20220029219A (en) | 2020-09-01 | 2022-03-08 | 삼성전자주식회사 | Antenna module performing inter-band carrier aggregation and electronic device comprising the same |
CN112216958B (en) * | 2020-09-30 | 2022-11-18 | 维沃移动通信有限公司 | Electronic device |
KR102396443B1 (en) | 2021-02-16 | 2022-05-09 | 동우 화인켐 주식회사 | Antenna structure and image display device including the same |
KR20220126514A (en) * | 2021-03-09 | 2022-09-16 | 삼성전자주식회사 | Antenna and electronic device including the same |
KR20230000887A (en) | 2021-06-25 | 2023-01-03 | 동우 화인켐 주식회사 | Antenna structure |
KR102390289B1 (en) | 2021-07-05 | 2022-04-22 | 동우 화인켐 주식회사 | Antenna structure and image display device including the same |
KR102390287B1 (en) | 2021-07-05 | 2022-04-22 | 동우 화인켐 주식회사 | Antenna structure and image display device including the same |
KR102578889B1 (en) * | 2021-07-05 | 2023-09-15 | 주식회사 네패스 | Semiconductor package including antenna |
KR102390288B1 (en) | 2021-07-05 | 2022-04-22 | 동우 화인켐 주식회사 | Antenna structure and image display device including the same |
KR102367163B1 (en) | 2021-07-05 | 2022-02-23 | 동우 화인켐 주식회사 | Antenna structure and image display device including the same |
KR20230017015A (en) | 2021-07-27 | 2023-02-03 | 동우 화인켐 주식회사 | Antenna structure |
US12132250B2 (en) | 2021-09-15 | 2024-10-29 | Samsung Electronics Co., Ltd. | Antenna module and electronic device including the same |
KR20230053423A (en) | 2021-10-14 | 2023-04-21 | 동우 화인켐 주식회사 | Antrnna package and display device including the same |
KR20230116416A (en) | 2022-01-28 | 2023-08-04 | 동우 화인켐 주식회사 | Antenna package and image display device including the same |
KR20230116419A (en) | 2022-01-28 | 2023-08-04 | 동우 화인켐 주식회사 | Impedance converter for antenna, antenna module including the same and image display device including the same |
KR20230121526A (en) | 2022-02-11 | 2023-08-18 | 동우 화인켐 주식회사 | Antenna structure |
KR20230134778A (en) | 2022-03-15 | 2023-09-22 | 동우 화인켐 주식회사 | Radiation modifier for antenna |
KR20230134776A (en) | 2022-03-15 | 2023-09-22 | 동우 화인켐 주식회사 | Antenna device |
KR20230134777A (en) | 2022-03-15 | 2023-09-22 | 동우 화인켐 주식회사 | Antenna structure |
KR20230159093A (en) | 2022-05-13 | 2023-11-21 | 동우 화인켐 주식회사 | Circuit board for antenna, antenna package including the same and image display device including the same |
KR20230165575A (en) | 2022-05-27 | 2023-12-05 | 동우 화인켐 주식회사 | Circuit board for antenna, antenna package including the same and image display device including the same |
KR20230171224A (en) | 2022-06-13 | 2023-12-20 | 동우 화인켐 주식회사 | Antenna device |
KR102636402B1 (en) | 2022-06-27 | 2024-02-13 | 동우 화인켐 주식회사 | Antenna device |
KR102636403B1 (en) | 2022-08-08 | 2024-02-14 | 동우 화인켐 주식회사 | Antenna structure |
KR102719878B1 (en) * | 2022-10-14 | 2024-10-21 | 주식회사 넥스웨이브 | Antenna module |
KR20240058491A (en) | 2022-10-26 | 2024-05-03 | 동우 화인켐 주식회사 | Refractive index modifier |
KR20240058492A (en) | 2022-10-26 | 2024-05-03 | 동우 화인켐 주식회사 | Antenna structure |
KR20240066865A (en) | 2022-11-08 | 2024-05-16 | 동우 화인켐 주식회사 | Antenna structure |
KR20240086172A (en) | 2022-12-09 | 2024-06-18 | 동우 화인켐 주식회사 | Antenna device |
KR20240129425A (en) | 2023-02-20 | 2024-08-27 | 동우 화인켐 주식회사 | Antenna device |
KR20240098708A (en) | 2022-12-21 | 2024-06-28 | 동우 화인켐 주식회사 | Circuit board for antenna, antenna package including the same and image display device including the same |
KR20240129701A (en) | 2023-02-21 | 2024-08-28 | 동우 화인켐 주식회사 | Antenna structure and display device including the same |
KR20240131630A (en) | 2023-02-24 | 2024-09-02 | 동우 화인켐 주식회사 | Antenna structure and display device including the same |
KR20240139674A (en) | 2023-03-15 | 2024-09-24 | 동우 화인켐 주식회사 | Antenna structure |
KR20240168049A (en) | 2023-05-22 | 2024-11-29 | 동우 화인켐 주식회사 | Conductive pattern and electromagnetic wave transmission film |
KR20240174613A (en) | 2023-06-09 | 2024-12-17 | 동우 화인켐 주식회사 | Antenna package |
KR20250024153A (en) | 2023-08-11 | 2025-02-18 | 동우 화인켐 주식회사 | Antenna structure |
KR20250031599A (en) | 2023-08-29 | 2025-03-07 | 동우 화인켐 주식회사 | Antenna structure |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101820097A (en) * | 2009-01-14 | 2010-09-01 | 莱尔德技术股份有限公司 | Dual-polarized antenna modules |
JP2015008410A (en) * | 2013-06-25 | 2015-01-15 | パナソニックIpマネジメント株式会社 | Wireless module |
US20150029062A1 (en) * | 2013-07-24 | 2015-01-29 | Raytheon Company | Polarization Dependent Electromagnetic Bandgap Antenna And Related Methods |
CN104716122A (en) * | 2013-12-13 | 2015-06-17 | 英飞凌科技股份有限公司 | Semiconductor package with integrated microwave component |
CN104867912A (en) * | 2013-12-18 | 2015-08-26 | 英特尔公司 | Embedded Millimeter Wave Phased Array Module |
US9711465B2 (en) * | 2012-05-29 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Antenna cavity structure for integrated patch antenna in integrated fan-out packaging |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7109942B2 (en) | 2004-10-21 | 2006-09-19 | The Boeing Company | Structurally integrated phased array antenna aperture design and fabrication method |
TWI496346B (en) | 2011-12-30 | 2015-08-11 | Ind Tech Res Inst | Dielectric antenna and antenna module |
US9548541B2 (en) | 2015-03-30 | 2017-01-17 | Huawei Technologies Canada Co., Ltd. | Apparatus and method for a high aperture efficiency broadband antenna element with stable gain |
-
2017
- 2017-11-03 KR KR1020170146113A patent/KR102019952B1/en active IP Right Grant
-
2018
- 2018-04-24 TW TW107113765A patent/TWI698044B/en active
-
2019
- 2019-09-03 KR KR1020190108731A patent/KR102240242B1/en active Active
-
2021
- 2021-04-08 KR KR1020210045624A patent/KR102314698B1/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101820097A (en) * | 2009-01-14 | 2010-09-01 | 莱尔德技术股份有限公司 | Dual-polarized antenna modules |
US9711465B2 (en) * | 2012-05-29 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Antenna cavity structure for integrated patch antenna in integrated fan-out packaging |
JP2015008410A (en) * | 2013-06-25 | 2015-01-15 | パナソニックIpマネジメント株式会社 | Wireless module |
US20150029062A1 (en) * | 2013-07-24 | 2015-01-29 | Raytheon Company | Polarization Dependent Electromagnetic Bandgap Antenna And Related Methods |
CN104716122A (en) * | 2013-12-13 | 2015-06-17 | 英飞凌科技股份有限公司 | Semiconductor package with integrated microwave component |
CN104867912A (en) * | 2013-12-18 | 2015-08-26 | 英特尔公司 | Embedded Millimeter Wave Phased Array Module |
Also Published As
Publication number | Publication date |
---|---|
KR102019952B1 (en) | 2019-09-11 |
KR20210042871A (en) | 2021-04-20 |
KR20190105546A (en) | 2019-09-17 |
KR102314698B1 (en) | 2021-10-19 |
KR102240242B1 (en) | 2021-04-14 |
TW201909475A (en) | 2019-03-01 |
KR20190009232A (en) | 2019-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI698044B (en) | Antenna module and manufacturing method thereof | |
CN109273823B (en) | Antenna module and method for manufacturing the same | |
TWI732131B (en) | Antenna module | |
TWI720320B (en) | Antenna module | |
TWI672864B (en) | Antenna module | |
TWI700860B (en) | Antenna module | |
TWI702755B (en) | Antenna module | |
CN109887903B (en) | Antenna module and manufacturing method | |
TWI770419B (en) | Semiconductor package and antenna module comprising the same | |
TWI670801B (en) | Composite antenna substrate and semiconductor package module | |
TWI731239B (en) | Fan-out semiconductor package | |
TWI660480B (en) | Fan-out semiconductor package | |
TWI699864B (en) | Antenna module | |
CN109411451B (en) | Fan-out type semiconductor package | |
TWI668818B (en) | Fan-out semiconductor package | |
TW202032736A (en) | Semiconductor package |