TWI682474B - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing method Download PDFInfo
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- TWI682474B TWI682474B TW107102528A TW107102528A TWI682474B TW I682474 B TWI682474 B TW I682474B TW 107102528 A TW107102528 A TW 107102528A TW 107102528 A TW107102528 A TW 107102528A TW I682474 B TWI682474 B TW I682474B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
基板處理裝置係包含有:基板保持單元,係保持周端的至少一部分作成圓弧狀的基板,且支撐前述基板的中央部並保持前述基板;基板旋轉單元,係使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉;各周端高度位置計測單元,係用以計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;處理液噴嘴,係朝被前述基板保持單元保持的基板的外周部噴出處理液;處理液供給單元,係對前述處理液噴嘴供給處理液;噴嘴驅動單元,係以前述基板中之處理液的著液位置移動之方式驅動前述處理液噴嘴;以及控制裝置,係控制前述基板旋轉單元,且控制前述噴嘴驅動單元。前述控制裝置係執行:各周端高度位置計測步驟,係藉由前述各周端高度位置計測單元計測前述各周端高度位置;外周部處理步驟,係一邊使前述基板繞著前述旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴 嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 The substrate processing apparatus includes: a substrate holding unit that holds at least a part of the peripheral end in a circular arc shape and supports the central portion of the substrate to hold the substrate; and a substrate rotating unit that holds the substrate held by the substrate holding unit Rotating around the rotation axis passing through the central portion of the substrate; each peripheral end height position measuring unit is used to measure each peripheral end belonging to the height position among the peripheral end positions in the circumferential direction of the substrate held by the substrate holding unit The height position; the processing liquid nozzle, which discharges the processing liquid toward the outer periphery of the substrate held by the substrate holding unit; the processing liquid supply unit, which supplies the processing liquid to the processing liquid nozzle; the nozzle driving unit, which processes the substrate The treatment liquid nozzle is driven by the movement of the liquid injection position; and the control device controls the substrate rotation unit and controls the nozzle driving unit. The control device executes: each peripheral end height position measuring step, which measures the peripheral end height position by the peripheral end height position measuring unit; the outer peripheral part processing step, which rotates the substrate around the rotation axis, While ejecting the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and the reciprocating step of the liquid injection position is parallel to the outer peripheral portion processing step, and the processing liquid is driven in the following manner Nozzle: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate is arranged on the side of the peripheral end of the substrate with the processing liquid spray The arrangement position of the circumferential end of the mouth belonging to the circumferential direction is kept constant, and the reciprocating movement follows the change in the height position of the circumferential end of the arrangement position.
Description
本發明係有關於一種基板處理裝置以及基板處理方法。成為處理對象之基板係包括例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等。 The invention relates to a substrate processing device and a substrate processing method. The substrates to be processed include, for example, semiconductor wafers, liquid crystal display device substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disc substrates, magnetic disc substrates, and optical magnetic disc substrates Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.
在半導體裝置或液晶顯示裝置等製造步驟中,對半導體晶圓或液晶顯示裝置用玻璃基板等基板的外周部進行使用了處理液的處理。用以逐片處理基板之葉片式的基板處理裝置(參照下述專利文獻1)係例如具備有:自轉夾具(spin chuck),係水平地保持基板並使基板旋轉;以及處理液噴嘴,係朝被自轉夾具保持的基板的上表面外周部噴出處理液。作為此種用以處理基板的外周部之基板處理裝置所使用之自轉夾具,並非是使用用以支撐基板的外周部之形式的自轉夾具,而是使用用以支撐基板的中央部之形式的自轉夾具。由於用以支撐基板的中央部之形式的自轉夾具係未支撐基板的外周部,因此會有在基板的保持狀態下基板相對於水平姿勢傾斜之虞。
In a manufacturing step such as a semiconductor device or a liquid crystal display device, the outer peripheral portion of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is treated with a processing liquid. A blade-type substrate processing apparatus for processing substrates piece by piece (see
專利文獻1:美國專利公開第2011/281376A1號公報。 Patent Document 1: US Patent Publication No. 2011/281376A1.
在針對基板的外周部之處理(以下稱為「外周部處理」)中,由於使基板繞著旋轉軸線旋轉,因此當基板相對於自轉夾具呈傾斜時,會有基板的周端中之配置有處理液噴嘴之旋轉方向位置的周端(以下稱為「配置位置周端」)的高度在各個旋轉方向位置進行變化之虞(面位移)。當配置位置周端的高度不同時,基板的上表面中之來自處理液噴嘴的處理液之著液位置與配置位置周端之間的距離會不同。因此,在處理液噴嘴相對於自轉夾具處於靜止姿勢之情形中,基板的上表面中之來自處理液噴嘴的處理液之著液位置與配置位置周端之間的距離會隨著基板的旋轉而變化。在此情形中,在外周部處理中無法將基板的外周部中的處理寬度的均勻性保持一定。 In the treatment of the outer periphery of the substrate (hereinafter referred to as "outer periphery treatment"), since the substrate is rotated around the rotation axis, when the substrate is inclined with respect to the rotation jig, there may be a processing liquid disposed in the peripheral end of the substrate The height of the circumferential end of the nozzle in the rotation direction (hereinafter referred to as the “arrangement position circumferential end”) may change in position in each rotation direction (plane displacement). When the height of the peripheral end of the arrangement position is different, the distance between the liquid injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position on the upper surface of the substrate will be different. Therefore, in the case where the processing liquid nozzle is in a stationary posture with respect to the rotation jig, the distance between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position in the upper surface of the substrate will change as the substrate rotates Variety. In this case, the uniformity of the processing width in the outer peripheral portion of the substrate cannot be kept constant during the outer peripheral processing.
因此,謀求能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 Therefore, it is desired to maintain the uniformity of the processing width in the outer peripheral portion of the substrate at a high level without being affected by the change in height position at the peripheral end of the arrangement position accompanying the rotation of the substrate.
因此,本發明的目的在於提供一種能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性之基板處理裝置以及基板處理方法。 Therefore, an object of the present invention is to provide a substrate processing apparatus and substrate processing capable of highly maintaining the uniformity of the processing width in the outer peripheral portion of the substrate without being affected by the change in the height of the peripheral end of the arrangement position accompanying the rotation of the substrate method.
本發明係包含有:基板保持單元,係保持周端的至少一部分作成圓弧狀的基板,且支撐前述基板的中央部並保持前述基板;基板旋轉單元,係使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉;各周端高度位置計測單元,係用以計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;處理液噴嘴,係朝被前述基板保持單元保持的基板的外周部噴出處理液;處理液供給單元,係對前述處理液噴嘴供給處理液;噴嘴驅動單元,係以前述基板中之處理液的著液位置移動之方式驅動前述處理液噴嘴;以及控制裝置,係控制前述基板旋轉單元、前述處理液供給單元、前述各周端高度位置計測單元以及前述噴嘴驅動單元;前述控制裝置係執行:各周端高度位置計測步驟,係藉由前述各周端高度位置計測單元計測前述各周端高度位置;外周部處理步驟,係一邊使前述基板繞著前述旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動之方式驅動前述處理液噴嘴。 The present invention includes: a substrate holding unit that holds at least a part of the peripheral end in a circular arc shape and supports the central portion of the substrate to hold the substrate; and a substrate rotating unit that winds the substrate held by the substrate holding unit Rotating through the rotation axis of the central portion of the substrate; each peripheral end height position measuring unit is used to measure the height of each peripheral end belonging to the height position among the peripheral end positions in the circumferential direction of the substrate held by the substrate holding unit Position; the processing liquid nozzle, which discharges the processing liquid toward the outer periphery of the substrate held by the substrate holding unit; the processing liquid supply unit, which supplies the processing liquid to the processing liquid nozzle; the nozzle driving unit, which uses the processing liquid in the substrate The liquid injection position is driven to drive the processing liquid nozzle; and the control device controls the substrate rotation unit, the processing liquid supply unit, the peripheral end height position measurement unit, and the nozzle driving unit; the control device executes: Each peripheral end height position measuring step measures the peripheral end height position by the peripheral end height position measuring unit; the outer peripheral portion processing step is to rotate the substrate around the rotation axis while removing the processing liquid nozzle The processing liquid is ejected toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and the reciprocating step of the liquid injection position is parallel to the outer peripheral portion processing step, and the processing liquid nozzle is driven in the following manner: the outer periphery of the substrate The position of the processing liquid from the processing liquid nozzle in the portion is maintained at a constant distance from the peripheral end of the peripheral end of the peripheral position of the circumferential position where the processing liquid nozzle is disposed in the peripheral end of the substrate The processing liquid nozzle is driven so as to reciprocate following the change in height position at the peripheral end of the arrangement position.
依據此構成,以下述方式驅動處理液噴嘴:處理液的著液位置係一邊與配置位置周端之間的間隔保持一定,一邊追隨配置位置周端的高度位置變化而往復移動。因此,能因應基板的旋轉所伴隨之配置位置周端的高度位置變化使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨。藉此,能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 According to this configuration, the processing liquid nozzle is driven in such a manner that the liquid injection position of the processing liquid is kept reciprocally while following the change in the height position of the circumferential end of the arrangement position while maintaining a constant distance from the circumferential end of the arrangement position. Therefore, it is possible to follow the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate, so that the liquid injection position of the processing liquid can be followed in such a manner that the distance from the peripheral end of the arrangement position is kept constant. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be maintained at a high level without being affected by the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate.
在本發明的實施形態之一中,前述控制裝置係於前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 In one embodiment of the present invention, the control device executes the reciprocating step of the liquid injection position after the step of measuring the height of each peripheral end.
依據此構成,可依據各周端高度位置計測步驟的結果執行著液位置往復移動步驟。 According to this configuration, the step of reciprocating the liquid position can be executed based on the results of the measuring steps of the height positions of the peripheral ends.
此外,前述噴嘴驅動單元亦可包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴。在此情形中,前述控制裝置亦可執行:噴嘴驅動訊號作成步驟,在前述著液位置往復移動步驟中,前述控制裝置係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊 號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 In addition, the nozzle driving unit may include a unit that is input with a nozzle driving signal for driving the processing liquid nozzle, thereby driving the processing liquid nozzle. In this case, the control device may also perform: a nozzle driving signal preparation step, and in the reciprocating step of the liquid injection position, the control device is based on the measurement result in the step of measuring the peripheral end height position and the peripheral processing The rotation speed of the substrate in the step is to create a nozzle driving signal for driving the processing liquid nozzle in such a manner that the liquid injection position will have the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position; and The driving signal output step is to output the created nozzle driving signal to the nozzle driving unit at the exclusion timing, and the exclusion timing has been relative to the nozzle driving signal The phase difference between the liquid injection position and the change in the height position relative to the peripheral end of the arrangement position accompanying the delay in driving the processing liquid nozzle at the output of the number is eliminated.
依據此構成,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的高度位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨配置位置周端的高度位置變化。 According to this configuration, in the reciprocating step of the liquid injection position, the nozzle for driving the processing liquid nozzle is made in such a manner that the liquid injection position of the processing liquid will move with the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position Drive signal. The nozzle driving signal is output to the nozzle driving unit at the elimination timing when the phase difference accompanying the driving delay of the processing liquid nozzle has been eliminated. That is, the nozzle driving signal is output at a timing that can follow the change in the height position at the peripheral end of the arrangement position and cause the liquid position to reciprocate. Thereby, the influence of the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal can be maintained, so that the injection position of the processing liquid can follow the circumferential end of the arrangement position at a certain distance from the circumferential end of the arrangement position The height position changes.
再者,前述控制裝置亦可在前述驅動訊號輸出步驟中執行時序取得步驟,前述時序取得步驟係從前述處理液噴嘴追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 In addition, the control device may also perform a timing acquisition step in the driving signal output step, the timing acquisition step is the most suitable chase from the processing liquid nozzle to follow the height position change of the peripheral position of the arrangement position, and the time sequence is staggered to the equivalent The time of the aforementioned phase difference, thereby obtaining the aforementioned timing of elimination.
依據此構成,從基板的外周部中之處理液的著液位置追隨配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於相位差之時間,藉此能求出排除時序。在此情形中,能簡單且正確地取得排除時序。 According to this configuration, the most appropriate tracking from the position of the treatment liquid in the outer peripheral portion of the substrate to the change in height position at the peripheral end of the arrangement position is shifted to the time corresponding to the phase difference, whereby the elimination timing can be obtained. In this case, the elimination timing can be obtained simply and correctly.
此外,前述噴嘴驅動單元亦可包含有:噴嘴移動單元,係使前述處理液噴嘴朝鉛直方向移動。在此情形中,前述 控制裝置亦可在前述著液位置往復移動步驟中執行下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 In addition, the nozzle driving unit may include a nozzle moving unit that moves the processing liquid nozzle in the vertical direction. In this case, the aforementioned The control device may also perform the following step in the reciprocating step of the liquid injection position: moving the processing liquid nozzle in the vertical direction following the change in height position at the peripheral end of the arrangement position.
依據此構成,在著液位置往復移動步驟中,使處理液噴嘴追隨配置位置周端的高度位置變化於鉛直方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this configuration, in the reciprocating step of the liquid application position, the processing liquid nozzle is moved in the vertical direction following the change in the height position of the peripheral end of the arrangement position. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.
此外,前述噴嘴驅動單元亦可包含有:噴嘴移動單元,係使前述處理液噴嘴沿著被前述基板保持單元保持的基板的主面移動。在此情形中,前述控制裝置亦可在前述著液位置往復移動步驟中執行下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 In addition, the nozzle driving unit may include a nozzle moving unit that moves the processing liquid nozzle along the main surface of the substrate held by the substrate holding unit. In this case, the control device may also perform the following steps in the reciprocating step of the liquid injection position: to maintain a constant interval between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position In this manner, the processing liquid nozzle is moved in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position.
依據此構成,在著液位置往復移動步驟中以將來自處理液噴嘴的處理液的著液位置與配置位置周端之間的間隔保持一定之方式,使處理液噴嘴追隨配置位置周端的高度位置變化朝旋轉半徑方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this configuration, in the reciprocating step of the liquid injection position, the processing liquid nozzle follows the height position of the peripheral end of the arrangement position in such a manner that the interval between the injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position is kept constant The change moves towards the radius of rotation. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.
此外,前述控制裝置亦可在前述著液位置往復移動步驟中執行使前述處理液噴嘴移動之步驟。前述基板處理裝置亦可進一步包含有:噴嘴移動量檢測單元,係用以檢測前述處理液噴嘴的移動量。在這些情形中,前述控制裝置 亦可在前述著液位置往復移動步驟之前進一步執行:相位差計測步驟,係對前述噴嘴移動單元輸出前述噴嘴驅動訊號並使前述處理液噴嘴移動,並藉由前述噴嘴移動量檢測單元檢測此時的前述處理液噴嘴的移動量,藉此計測前述相位差。前述控制裝置亦可在前述時序取得步驟中執行下述步驟:依據前述相位差計測步驟所計測的相位差取得前述排除時序。 In addition, the control device may execute a step of moving the processing liquid nozzle in the reciprocating step of the liquid injection position. The substrate processing apparatus may further include a nozzle movement amount detection unit for detecting the movement amount of the processing liquid nozzle. In these cases, the aforementioned control device It may be further executed before the reciprocating movement step of the liquid injection position: the phase difference measurement step is to output the nozzle driving signal to the nozzle moving unit and move the processing liquid nozzle, and detect the time by the nozzle movement amount detecting unit The amount of movement of the aforementioned processing liquid nozzle is used to measure the aforementioned phase difference. The control device may also perform the following steps in the timing acquisition step: acquiring the excluded timing based on the phase difference measured in the phase difference measurement step.
依據此構成,使處理液噴嘴移動並使用噴嘴移動量檢測單元檢測此時的處理液噴嘴的移動量,藉此能實際地計測相位差。由於依據實際測量的相位差移動處理液噴嘴,因此能使處理液的著液位置的往復移動更良好地追隨配置位置周端的高度位置變化。 According to this configuration, by moving the processing liquid nozzle and detecting the moving amount of the processing liquid nozzle at this time using the nozzle moving amount detection unit, the phase difference can be actually measured. Since the processing liquid nozzle is moved according to the actually measured phase difference, the reciprocating movement of the liquid injection position of the processing liquid can better follow the change in height position at the peripheral end of the arrangement position.
此外,前述噴嘴移動單元亦可包含有電動馬達,前述移動量檢測單元亦可包含有設置於前述電動馬達的編碼器。 In addition, the nozzle movement unit may include an electric motor, and the movement amount detection unit may include an encoder provided in the electric motor.
依據此構成,能以編碼器此種簡單的構成精度佳地檢測處理液噴嘴的移動量。能使處理液的著液位置的往復移動更高精度地追隨配置位置周端的高度位置變化。 According to this configuration, the movement amount of the processing liquid nozzle can be accurately detected with a simple configuration such as an encoder. The reciprocating movement of the liquid injection position of the processing liquid can follow the change in height position at the peripheral end of the arrangement position with higher accuracy.
此外,前述各周端高度位置計測單元亦可包含有位置感測器以及CCD(Charge Coupled Device;電荷耦合元件)攝像機中的至少一者,前述位置感測器係用以檢測前述基板的周端高度位置中之周方向的預定的周端高度位置,前述CCD攝像機係用以拍攝前述基板的至少外周部。 In addition, each of the peripheral end height position measuring units may also include at least one of a position sensor and a CCD (Charge Coupled Device; Charge Coupled Device) camera. The position sensor is used to detect the peripheral end of the substrate Among the height positions, a predetermined circumferential height position in the circumferential direction, the CCD camera is used to photograph at least the outer peripheral portion of the substrate.
依據此構成,能使用簡單的構成計測被基板保持單元 保持的基板的周方向的各周端高度位置。 According to this configuration, the substrate holding unit can be measured with a simple configuration The height position of each circumferential end of the held substrate in the circumferential direction.
此外,前述各周端高度位置計測單元亦可包含有:位置感測器,係用以檢測前述基板的周端高度位置中之周方向的預定的周端高度位置。在此情形中,前述控制裝置亦可在前述各周端高度位置計測步驟中執行下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用前述位置感測器計測前述預定的周端高度位置。 In addition, each of the peripheral end height position measuring units may further include a position sensor for detecting a predetermined peripheral end height position in the circumferential direction among the peripheral end height positions of the substrate. In this case, the control device may also perform the following steps in each of the peripheral end height position measurement steps: while rotating the substrate held by the substrate holding unit around the rotation axis, while using the position sensor for measurement The aforementioned predetermined circumferential height position.
依據此構成,一邊使被基板保持單元保持的基板轉動,一邊使用位置感測器計測預定的周端高度位置,藉此能計測基板的周方向的各周端高度位置。亦即,能使用位置感測器此種簡單的構成良好地計測基板的周方向的各周端高度位置。 According to this configuration, while rotating the substrate held by the substrate holding unit, a predetermined circumferential end height position is measured using a position sensor, whereby each circumferential end height position in the circumferential direction of the substrate can be measured. That is, it is possible to measure the height position of each peripheral end in the circumferential direction of the substrate with a simple configuration such as a position sensor.
此外,前述處理液噴嘴亦可朝基板的外側及斜下方噴出處理液。 In addition, the processing liquid nozzle may discharge the processing liquid toward the outside of the substrate and diagonally downward.
依據此構成,由於處理液噴嘴朝斜下方噴出處理液,因此會有處理液的著液位置與配置位置周端之間的距離因應基板的旋轉所伴隨之配置位置周端的高度位置變化而變化之虞。 According to this configuration, since the processing liquid nozzle discharges the processing liquid obliquely downward, the distance between the liquid injection position of the processing liquid and the peripheral end of the arrangement position varies depending on the height position change of the peripheral end of the arrangement position accompanying the rotation of the substrate Yu.
然而,由於使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨基板的旋轉所伴隨之配置位置周端的高度位置變化,因此能不受基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地將處理液的著液位置與配置位置周端之間的距離保持一定,藉此能高度保持基板的外周部中之處理寬度的均勻性。 However, since the liquid injection position of the processing liquid is kept constant at a distance from the peripheral end of the arrangement position, the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate changes, so it can be arranged without being accompanied by the rotation of the substrate The influence of the change of the height position at the peripheral end of the position keeps the distance between the filling position of the processing liquid and the peripheral end of the arrangement position constant, whereby the uniformity of the processing width in the outer peripheral portion of the substrate can be highly maintained.
此外,本發明係提供一種基板處理方法,係包含有:基板保持步驟,係藉由用以支撐基板的中央部並保持前述基板之基板保持單元,保持周端的至少一部分作成圓弧狀的基板;各周端高度位置計測步驟,係計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;外周部處理步驟,係一邊使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉,一邊從處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式藉由噴嘴驅動單元驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 In addition, the present invention provides a substrate processing method including: a substrate holding step, wherein a substrate holding unit for supporting the central portion of the substrate and holding the substrate, holding at least a part of the circumferential end of the substrate into an arc shape; Each peripheral end height position measurement step is to measure each peripheral end height position belonging to the height position among the peripheral end positions of the substrate held by the substrate holding unit in the circumferential direction; the outer peripheral portion processing step is to hold the substrate The substrate held by the unit rotates around the rotation axis passing through the central portion of the substrate, and the processing liquid is ejected from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; In parallel with the processing steps of the outer peripheral portion, the processing liquid nozzle is driven by the nozzle driving unit in the following manner: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate is on one side and in the peripheral end of the substrate The interval between the circumferential positions of the circumferential ends of the circumferential positions where the processing liquid nozzles are arranged is kept constant, while reciprocatingly following the change in the height position of the circumferential ends of the arrangement positions.
依據此方法,以下述方式驅動處理液噴嘴:處理液的著液位置係一邊與配置位置周端之間的間隔保持一定,一邊追隨配置位置周端的高度位置變化而往復移動。因此,能因應基板的旋轉所伴隨之配置位置周端的高度位置變化使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨。藉此,能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 According to this method, the processing liquid nozzle is driven in such a manner that the liquid injection position of the processing liquid is kept at a constant distance from the peripheral end of the arrangement position while reciprocatingly following the change in the height position of the peripheral end of the arrangement position. Therefore, it is possible to follow the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate, so that the liquid injection position of the processing liquid can be followed in such a manner that the distance from the peripheral end of the arrangement position is kept constant. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be maintained at a high level without being affected by the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate.
在本發明的實施形態之一中,前述著液位置往復移動 步驟係包含有下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 In one embodiment of the present invention, the liquid injection position reciprocates The step includes the step of moving the processing liquid nozzle in the vertical direction following the change in height position of the peripheral end of the arrangement position.
依據此方法,在著液位置往復移動步驟中,使處理液噴嘴追隨配置位置周端的高度位置變化於鉛直方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this method, in the reciprocating step of the liquid application position, the processing liquid nozzle is moved in the vertical direction following the change in the height position of the peripheral end of the arrangement position. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.
此外,前述著液位置往復移動步驟亦可包含有下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 In addition, the reciprocating step of the liquid injection position may also include the step of causing the processing liquid to maintain a constant interval between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position. The nozzle moves in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position.
依據此方法,在著液位置往復移動步驟中以將來自處理液噴嘴的處理液的著液位置與配置位置周端之間的間隔保持一定之方式,使處理液噴嘴追隨配置位置周端的高度位置變化朝旋轉半徑方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this method, in the reciprocating step of the liquid injection position, the processing liquid nozzle follows the height position of the peripheral end of the arrangement position in such a manner that the interval between the injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position is kept constant The change moves towards the radius of rotation. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.
此外,亦可在前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 In addition, the step of reciprocating the liquid injection position may be performed after the step of measuring the height of each peripheral end.
依據此方法,能依據各周端高度位置計測步驟的結果執行著液位置往復移動步驟。 According to this method, the step of reciprocating the liquid position can be performed according to the results of the measuring steps of the height positions of the peripheral ends.
此外,前述噴嘴驅動單元亦可包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴;前述著液位置往復移動步驟亦可包含有: 噴嘴驅動訊號作成步驟,係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 In addition, the nozzle driving unit may also include a unit in which a nozzle driving signal for driving the processing liquid nozzle is input to thereby drive the processing liquid nozzle; and the reciprocating step of the liquid application position may also include: The nozzle driving signal preparation step is based on the measurement result in the circumferential end height position measurement step and the rotation speed of the substrate in the outer peripheral part processing step, so that the liquid injection position changes with the height position of the circumferential position of the arrangement position A nozzle driving signal for driving the processing liquid nozzle is formed with the same amplitude and the same periodic movement method; and the driving signal output step is to output the created nozzle driving signal to the nozzle driving unit at the elimination timing. The exclusion sequence has eliminated the phase difference of the liquid injection position due to the change in the height position relative to the peripheral end of the arrangement position accompanying the driving delay of the processing liquid nozzle with respect to the output of the nozzle drive signal.
依據此方法,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的高度位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨配置位置周端的高度位置變化。 According to this method, in the reciprocating step of the liquid injection position, the nozzle for driving the processing liquid nozzle is made in such a manner that the liquid injection position of the processing liquid will change with the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position Drive signal. The nozzle driving signal is output to the nozzle driving unit at the elimination timing when the phase difference accompanying the driving delay of the processing liquid nozzle has been eliminated. That is, the nozzle driving signal is output at a timing that can follow the change in the height position at the peripheral end of the arrangement position and cause the liquid position to reciprocate. Thereby, the influence of the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal can be maintained, so that the injection position of the processing liquid can follow the circumferential end of the arrangement position at a certain distance from the circumferential end of the arrangement position The height position changes.
此外,前述驅動訊號輸出步驟亦可包含有:時序取得步驟,係從前述著液位置追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 In addition, the driving signal output step may also include a timing acquisition step, which is to shift the most appropriate chase from the liquid injection position to the height position change at the peripheral end of the arrangement position to a time corresponding to the phase difference, thereby Obtain the aforementioned exclusion sequence.
依據此方法,從基板的外周部中之處理液的著液位置追隨配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於相位差之時間,藉此能求出排除時序。在此情形中,能簡單且正確地取得排除時序。 According to this method, the most appropriate chase from the position of the treatment liquid in the outer peripheral portion of the substrate following the height position change of the peripheral end of the arrangement position is staggered by a time equivalent to the phase difference, whereby the elimination timing can be obtained. In this case, the elimination timing can be obtained simply and correctly.
前述基板處理方法亦可進一步包含有:相位差計測步驟,係在前述著液位置往復移動步驟之前對前述噴嘴驅動單元輸出前述噴嘴驅動訊號並使前述著液位置移動,藉此計測前述相位差。在此情形中,前述時序取得步驟亦可包含有下述步驟:依據前述相位差取得前述排除時序。 The substrate processing method may further include a phase difference measurement step, which is to output the nozzle drive signal to the nozzle drive unit and move the liquid injection position before the liquid injection position reciprocating step, thereby measuring the phase difference. In this case, the timing obtaining step may also include the following step: obtaining the excluded timing based on the phase difference.
依據此方法,由於依據實際測量的相位差移動處理液噴嘴,因此能使處理液的著液位置的往復移動更良好地追隨配置位置周端的高度位置變化。 According to this method, since the processing liquid nozzle is moved according to the actually measured phase difference, the reciprocating movement of the liquid injection position of the processing liquid can better follow the change in height position at the peripheral end of the arrangement position.
此外,前述各周端高度位置計測步驟亦可進一步包含有下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用位置感測器計測前述預定的周端高度位置。 In addition, the step of measuring the circumferential end height position may further include the step of measuring the predetermined circumferential end height position using a position sensor while rotating the substrate held by the substrate holding unit about the rotation axis .
依據此方法,一邊使被基板保持單元保持的基板轉動,一邊使用位置感測器檢測預定的周端高度位置,藉此能計測基板的周方向的各周端高度位置。亦即,能使用位置感測器此種簡單的構成良好地計測基板的周方向的各周端高度位置。 According to this method, while rotating the substrate held by the substrate holding unit, a predetermined circumferential end height position is detected using a position sensor, whereby each circumferential end height position in the circumferential direction of the substrate can be measured. That is, it is possible to measure the height position of each peripheral end in the circumferential direction of the substrate with a simple configuration such as a position sensor.
本發明的前述目的、特徵及功效以及其他的目的、特徵及功效係能參照隨附的圖式且藉由下述實施形態的說明而更明瞭。 The foregoing objects, features, and effects of the present invention and other objects, features, and effects can be made clearer by referring to the accompanying drawings and by the description of the following embodiments.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing device
2‧‧‧處理單元 2‧‧‧Processing unit
3‧‧‧控制裝置 3‧‧‧Control device
4‧‧‧處理腔室 4‧‧‧Process chamber
5‧‧‧自轉夾具 5‧‧‧Rotating fixture
6‧‧‧處理液供給單元 6‧‧‧Process liquid supply unit
8‧‧‧第一惰性氣體供給單元 8‧‧‧First inert gas supply unit
9‧‧‧第二惰性氣體供給單元 9‧‧‧Second inert gas supply unit
10‧‧‧第三惰性氣體供給單元 10‧‧‧The third inert gas supply unit
11‧‧‧加熱器 11‧‧‧heater
12‧‧‧處理罩 12‧‧‧Processing hood
12a‧‧‧上端部 12a‧‧‧Upper end
13‧‧‧隔壁 13‧‧‧ next door
14‧‧‧FFU 14‧‧‧FFU
15‧‧‧排氣導管 15‧‧‧Exhaust duct
16‧‧‧自轉軸 16‧‧‧spindle
17‧‧‧自轉基座 17‧‧‧rotation base
17a‧‧‧上表面 17a‧‧‧upper surface
18‧‧‧自轉馬達 18‧‧‧rotation motor
19‧‧‧處理液噴嘴 19‧‧‧treatment liquid nozzle
19a‧‧‧噴出口 19a‧‧‧Spray outlet
20‧‧‧噴嘴臂 20‧‧‧ nozzle arm
21‧‧‧臂支撐軸 21‧‧‧arm support shaft
22‧‧‧臂搖動馬達 22‧‧‧arm rocking motor
22a、122a‧‧‧輸出軸 22a, 122a‧‧‧ output shaft
23‧‧‧編碼器 23‧‧‧Encoder
24‧‧‧藥液配管 24‧‧‧ liquid medicine piping
25‧‧‧藥液閥 25‧‧‧Medicine valve
26A‧‧‧清洗液配管 26A‧‧‧Cleaning liquid piping
26B‧‧‧清洗液閥 26B‧‧‧Cleaning liquid valve
27‧‧‧氣體噴出噴嘴 27‧‧‧ gas spray nozzle
28‧‧‧第一氣體配管 28‧‧‧First gas piping
29‧‧‧第一氣體閥 29‧‧‧ First gas valve
30‧‧‧第一噴嘴移動機構 30‧‧‧ First nozzle moving mechanism
31‧‧‧上外周部氣體噴嘴 31‧‧‧Upper peripheral gas nozzle
32‧‧‧第二氣體配管 32‧‧‧Second gas piping
33‧‧‧第二氣體閥 33‧‧‧Second gas valve
34‧‧‧第二噴嘴移動機構 34‧‧‧Second nozzle moving mechanism
36‧‧‧下外周部氣體噴嘴 36‧‧‧Lower outer gas nozzle
37‧‧‧第三氣體配管 37‧‧‧Third gas piping
38‧‧‧第三氣體閥 38‧‧‧The third gas valve
41‧‧‧外周部 41‧‧‧Outer periphery
42、43‧‧‧外周區域 42, 43‧‧‧ Peripheral area
44‧‧‧周端面 44‧‧‧week end
45‧‧‧著液位置 45‧‧‧Litting position
46‧‧‧配置位置周端 46‧‧‧ Configuration location
51‧‧‧運算單元 51‧‧‧ arithmetic unit
52‧‧‧記憶單元 52‧‧‧Memory unit
53‧‧‧輸出單元 53‧‧‧Output unit
54‧‧‧配方記憶部 54‧‧‧Recipe Memory Department
55‧‧‧相位差記憶部 55‧‧‧Phase difference memory
56‧‧‧移動步驟執行旗標 56‧‧‧Move step execution flag
57‧‧‧噴嘴驅動訊號 57‧‧‧ Nozzle drive signal
59‧‧‧周端高度位置記憶部 59‧‧‧Circumferential height position memory
122‧‧‧臂升降馬達 122‧‧‧arm lift motor
147‧‧‧高度位置感測器 147‧‧‧ Height position sensor
A‧‧‧振幅 A‧‧‧Amplitude
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
A2‧‧‧搖動軸線 A2‧‧‧Shake axis
C1‧‧‧承載器 C1‧‧‧Carrier
CR、IR‧‧‧搬運機器人 CR, IR‧‧‧handling robot
H‧‧‧手部 H‧‧‧Hand
LP‧‧‧卸載部 LP‧‧‧Unloading Department
P‧‧‧相位 P‧‧‧Phase
PD‧‧‧週期 PD‧‧‧cycle
RD‧‧‧徑方向 RD‧‧‧Diameter
SW1、SW2‧‧‧正弦波 SW1, SW2‧‧‧sine wave
V‧‧‧高度方向 V‧‧‧ Height direction
W‧‧‧基板 W‧‧‧Substrate
△P‧‧‧相位差 △P‧‧‧Phase difference
θ‧‧‧入射角 θ‧‧‧incidence angle
圖1係用以說明本發明的實施形態之一的基板處理裝置的內部的布局之示意性的俯視圖。 FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus according to an embodiment of the present invention.
圖2係用以說明前述基板處理裝置所具備的處理單元的構成例之示意性的剖視圖。 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit included in the substrate processing apparatus.
圖3係用以顯示正從配置於處理位置的處理液噴嘴噴出處理液的狀態之剖視圖。 FIG. 3 is a cross-sectional view showing a state where the processing liquid is being discharged from the processing liquid nozzle arranged at the processing position.
圖4係顯示基板在傾斜狀態下被自轉夾具保持的狀態之示意圖。 FIG. 4 is a schematic diagram showing a state where the substrate is held by the rotation jig in an inclined state.
圖5係用以顯示基板在傾斜狀態下被自轉夾具保持的狀態之示意圖。 FIG. 5 is a schematic diagram showing a state where the substrate is held by the rotation jig in the inclined state.
圖6係用以顯示參考基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 6 is a plan view showing the processing width of the outer peripheral area of the upper surface of the substrate in the reference substrate processing example.
圖7係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 7 is a block diagram for explaining the electrical structure of the main part of the substrate processing apparatus.
圖8係用以顯示配置位置周端的高度位置變化之正弦波以及已在追隨時序輸出噴嘴驅動訊號之情形中的著液位置的高度位置變化之正弦波。 FIG. 8 is a sine wave for showing the change in the height position at the peripheral end of the arrangement position and the sine wave for the change in the height position of the liquid injection position in the case where the nozzle driving signal has been output in time.
圖9A係用以說明圖7所示的各周端高度位置記憶部之圖。 FIG. 9A is a diagram for explaining the height position memory portions of each peripheral end shown in FIG. 7.
圖9B係用以說明圖7所示的相位差記憶部之圖。 9B is a diagram for explaining the phase difference memory section shown in FIG. 7.
圖10係用以說明前述處理單元所為之基板處理例之流程圖。 FIG. 10 is a flowchart for explaining an example of substrate processing by the aforementioned processing unit.
圖11係用以說明圖10所示的各周端高度位置計測步 驟的內容之流程圖。 FIG. 11 is used to explain the measurement steps of the height position of each peripheral end shown in FIG. 10 Step by step flow chart.
圖12係用以說明圖10所示的相位差計測步驟的內容之流程圖。 FIG. 12 is a flowchart for explaining the content of the phase difference measurement procedure shown in FIG. 10.
圖13係用以說明圖10所示的外周部處理步驟的內容之流程圖。 FIG. 13 is a flowchart for explaining the content of the outer peripheral processing procedure shown in FIG. 10.
圖14係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 14 is a schematic diagram for explaining the contents of the aforementioned peripheral processing steps.
圖15係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 15 is a schematic diagram for explaining the contents of the aforementioned peripheral processing steps.
圖16係用以顯示配置位置周端的高度位置變化之正弦波以及已在排除時序輸出噴嘴驅動訊號之情形中的著液位置的高度位置變化之正弦波。 FIG. 16 is a sine wave for showing the change in height position at the peripheral end of the arrangement position and the sine wave for the change in height position of the liquid injection position in the case where the nozzle driving signal is output in time sequence.
圖17係用以顯示前述基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 17 is a plan view showing the processing width of the outer peripheral region of the upper surface of the substrate in the aforementioned substrate processing example.
在以下中,參照隨附的圖式詳細地說明本發明的實施形態。 In the following, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖1係用以說明本發明實施形態之一的基板處理裝置的內部的布局之示意性的俯視圖。基板處理裝置1係葉片式的裝置,用以藉由處理液或處理氣體逐片地處理半導體晶圓等圓板狀的基板W。基板處理裝置1係包含有:複數個處理單元2,係使用處理液處理基板W;裝載埠(load port)LP,係載置有承載器(carrier)C1,該承載器C1係用以收容被處理單元2處理之複數片基板W;搬運機器人IR
以及搬運機器人CR,係在裝載埠LP與處理單元2之間搬運基板W;以及控制裝置3,係控制基板處理裝置1。搬運機器人IR係在承載器C1與搬運機器人CR之間搬運基板W。搬運機器人CR係在搬運機器人IR與處理單元2之間搬運基板W。複數個處理單元2係例如具有同樣的構成。
FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus according to an embodiment of the present invention. The
圖2係用以說明處理單元2的構成例之示意性的剖視圖。
FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the
處理單元2係用以使用處理液處理(頂側處理)基板W的外周部41(參照圖3等)之單元,更具體而言,處理單元2係用以使用處理液處理(頂側處理)基板W的上表面(主面)的外周區域42(參照圖3等)以及基板W的周端面44(參照圖3等)之單元。在本實施形態中,所謂基板W的外周部41係指包含有基板W的上表面的外周區域42、基板W的下表面(主面)的外周區域43(參照圖3等)以及基板W的周端面44之部分。此外,所謂外周區域42、43係指例如從基板W的周端緣起具有微距毫米(comma milli)至數毫米左右的寬度之環狀的區域。
The
處理單元2係包含有:箱形的處理腔室(processing chamber)4,係具有內部空間;自轉夾具(spin chuck)(基板保持單元)5,係在處理腔室4內以水平的姿勢保持一片基板W,並使基板W繞著通過基板W的中心之鉛直的旋轉軸線A1旋轉;處理液供給單元6,係用以將處理液(藥液以及清洗(rinse)液)供給至被自轉夾具5保持的基板W的上表面的外周區域42;第一惰性氣體供給單元8,係用以將惰性氣
體供給至被自轉夾具5保持的基板W的上表面中央部;第二惰性氣體供給單元9,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的外周區域42;第三惰性氣體供給單元10,係用以將惰性氣體供給至被自轉夾具5保持的基板W的下表面的外周區域43;加熱器11,係加熱被自轉夾具5保持的基板W的下表面的外周區域43;以及筒狀的處理罩(processing cup)12,係圍繞自轉夾具5。
The
處理腔室4係包含有:箱狀的隔壁13;作為送風單元的FFU(fan filter unit;風扇過濾器單元)14,係從隔壁13的上部將清淨空氣輸送至隔壁13內(相當於處理腔室4內);以及排氣裝置(未圖示),係從隔壁13的下部排出處理腔室4內的氣體。
The
FFU14係配置於隔壁13的上方,並安裝於隔壁13的頂部。FFU14係從隔壁13的頂部將清淨空氣輸送至處理腔室4內。排氣裝置係經由連接至處理罩12內的排氣導管15而連接至處理罩12的底部,用以從處理罩12的底部吸引處理罩12的內部。藉由FFU14以及排氣裝置,於處理腔室4內形成有降流(down flow)(下降流)。
The
在本實施形態中,自轉夾具5為真空吸附式的夾具。自轉夾具5係吸附支撐基板W的下表面中央部。自轉夾具5係具備有:自轉軸(spin axis)16,係於鉛直的方向延伸;自轉基座(spin base)17,係安裝於該自轉軸16的上端,並以水平的姿勢吸附並保持基板W的下表面;以及自轉馬達(spin motor)(基板旋轉單元)18,係具有與自轉軸16同軸地
結合之旋轉軸。自轉基座17係包含有:水平的圓形的上表面17a,係具有比基板W的外徑還小的外徑。在基板W的背面被自轉基座17吸附保持的狀態下,基板W的外周部41係伸出至比自轉基座17的周端緣還外側。驅動自轉馬達18,藉此使基板W繞著自轉軸16的中心軸線旋轉。
In this embodiment, the
處理液供給單元6係包含有處理液噴嘴19。處理液噴嘴19係例如為直式噴嘴(straight nozzle),以連續流動的狀態噴出液體。處理液噴嘴19係具有作為掃描噴嘴的基本形態,係能變更基板W的上表面中的處理液的供給位置。處理液噴嘴19係在自轉夾具5的上方安裝於大致水平地延伸的噴嘴臂20的前端部。噴嘴臂20係在自轉夾具5的側方被大致鉛直延伸的臂支撐軸21支撐。
The processing
於臂支撐軸21結合有臂搖動馬達22。臂搖動馬達22係例如為伺服馬達。能藉由臂搖動馬達22使噴嘴臂20以設定於自轉夾具5的側方之鉛直的搖動軸線A2(亦即臂支撐軸21的中心軸線)作為中心在水平面內搖動,藉此能使處理液噴嘴19繞著搖動軸線A2轉動。
An
於臂支撐軸21經由滾珠螺桿機構等結合有臂升降馬達122。臂升降馬達122係例如為伺服馬達。藉由臂升降馬達122,能使臂支撐軸21升降並使噴嘴臂20與臂支撐軸21一體性地升降。藉此,能使處理液噴嘴19升降(亦即沿著高度方向V(鉛直方向)移動)。於臂升降馬達122結合有編碼器23,該編碼器23係用以檢測臂升降馬達122的輸出軸122a的旋轉角度。當臂升降馬達122使輸出軸122a
旋轉時,處理液噴嘴19係以已因應了輸出軸22a的旋轉角度之移動量上升或下降。亦即,當處理液噴嘴19上升或下降時,使臂搖動馬達22的輸出軸22a以相當於處理液噴嘴19的移動量之旋轉角度旋轉。因此,藉由編碼器23檢測輸出軸22a的旋轉角度,藉此能檢測處理液噴嘴19的位置(高度方向V(鉛直方向)的位置)。
An
於處理液噴嘴19連接有藥液配管24,該藥液配管24係被供給有來自藥液供給源的藥液。於藥液配管24的中途部夾設有用以開閉藥液配管24之藥液閥25。此外,於處理液噴嘴19連接有清洗液配管26A,該清洗液配管26A係被供給有來自清洗液供給源的清洗液。於清洗液配管26A的中途部夾設有用以開閉清洗液配管26A之清洗液閥26B。當在清洗液閥26B被關閉的狀態下開啟藥液閥25時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從藥液配管24供給至處理液噴嘴19之連續流動的藥液。此外,當在藥液閥25被關閉的狀態下開啟清洗液閥26B時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從清洗液配管26A供給至處理液噴嘴19之連續流動的清洗液。
A
藥液係例如為用以蝕刻基板W的表面或者洗淨基板W的表面之液體。藥液亦可為包含有氫氟酸、硫酸、醋酸、硝酸、鹽酸、緩衝氫氟酸(BHF;buffered HF)、稀釋氫氟酸(DHF;dilute hydrofluoric acid)、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH(Tetra Methyl Ammonium Hydroxide;氫氧化四甲銨)等)、有機溶劑(例如IPA(isopropyl alcohol;異丙醇)等)、界面活性劑、防腐蝕劑中的至少一者之液體。清洗液係例如為去離子水(DIW;deionized water),但並未限定於DIW,亦可為碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppm左右)的鹽酸水中的任一者。 The chemical liquid is, for example, a liquid for etching the surface of the substrate W or washing the surface of the substrate W. The drug solution can also contain hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF; buffered HF), dilute hydrofluoric acid (DHF; dilute hydrofluoric acid), ammonia water, hydrogen peroxide water, organic Acid (such as citric acid, oxalic acid, etc.), organic base (such as TMAH (Tetra Methyl Ammonium Hydroxide (tetramethylammonium hydroxide), etc.), an organic solvent (such as IPA (isopropyl alcohol; isopropyl alcohol), etc.), a liquid of at least one of a surfactant and a corrosion inhibitor. The cleaning liquid system is, for example, deionized water (DIW; deionized water), but it is not limited to DIW, and may also be carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm) Any of them.
第一惰性氣體供給單元8係包含有:氣體噴出噴嘴27,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的中央部;第一氣體配管28,係用以將惰性氣體供給至氣體噴出噴嘴27;第一氣體閥29,係將第一氣體配管28予以開閉;以及第一噴嘴移動機構30,係用以使氣體噴出噴嘴27移動。當在設定於基板W的上表面中央部的上方之處理位置中開啟第一氣體閥29時,藉由從氣體噴出噴嘴27噴出的惰性氣體於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。
The first inert
第二惰性氣體供給單元9係包含有:上外周部氣體噴嘴31,係用以將惰性氣體噴出至基板W的上表面的外周區域42;第二氣體配管32,係用以將惰性氣體供給至上外周部氣體噴嘴31;第二氣體閥33,係用以將第二氣體配管32予以開閉;以及第二噴嘴移動機構34,係用以使上外周部氣體噴嘴31移動。當在與基板W的上表面的外周區域42對向之處理位置中開啟第二氣體閥33時,上外周部氣體噴嘴31係從基板W的旋轉半徑方向(以下稱為徑方向RD)的內側朝外側以及斜下方將惰性氣體噴出至基板W的上
表面的外周區域42的噴吹位置。藉此,能抑制基板W的上表面的外周區域42中的處理液的處理寬度。
The second inert
第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以將第三氣體配管37予以開閉。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係從徑方向RD的內側朝外側斜上方(例如相對於水平面為45°)將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。
The third inert
加熱器11係形成為圓環狀,並具有與基板W的外徑同等的外徑。加熱器11係具有上端面,該上端面係與被自轉夾具5保持的基板W的下表面的外周區域43對向。加熱器11係使用陶瓷或炭化矽(SiC)形成,並於內部埋設有加熱源(未圖示)。藉由加熱源的加熱溫熱加熱器11,加熱器11係加熱基板W。藉由加熱器11從下表面側加熱基板W的外周部41,藉此能提升基板W的上表面的外周區域42中的處理速率。
The
處理罩12係配置於比被自轉夾具5保持的基板W還外側(遠離旋轉軸線A1的方向)。處理罩12係圍繞自轉基座17。當在自轉夾具5使基板W旋轉的狀態下對基板W供給處理液時,供給至基板W的處理液係被甩離至基板W的周圍。在對基板W供給處理液時,朝上開放的處理罩
12的上端部12a係配置於比自轉基座17還上方。因此,排出至基板W的周圍之藥液或水等處理液係被處理罩12接住。接著,被處理罩12接住的處理液係被排液處理。
The
此外,處理單元2係包含有:高度位置感測器(位置感測器)147,係用以檢測被自轉夾具5保持的基板W的周端的高度(鉛直方向)V的位置(以下簡稱為「高度位置」)。高度位置感測器147係針對基板W的周端面44中之預定的計測對象位置檢測基板W的周端面44的高度位置。在本實施形態中,藉由高度位置感測器147與控制裝置3構成周端高度位置位置計測單元。
In addition, the
圖3係用以顯示正從配置於處理位置的處理液噴嘴19噴出處理液的狀態之剖視圖。
FIG. 3 is a cross-sectional view showing a state where the processing liquid is being discharged from the processing
處理液噴嘴19係配置於與基板W的上表面的外周區域42對向的處理位置。在此狀態下,當選擇性地開啟藥液閥25(參照圖2)以及清洗液閥26B(參照圖2)時,處理液噴嘴19係從徑方向RD的內側朝外側斜下方將處理液(藥液或清洗液)噴出至基板W的上表面的外周區域42的著液位置(以下簡稱為「著液位置45」)。由於從徑方向RD的內側朝著液位置45噴出處理液,因此能抑制或防止處理液朝屬於器件(device)形成區域之基板W的上表面中央部飛濺。此時,來自噴出口19a的處理液的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板的上表面之方向。射入角度θ係例如約30°至約80°,較佳為約45°。著液至著液位置45的處理液係相對於著液位置45朝徑方向RD的
外側流動。藉由處理液處理基板W的上表面的外周區域42中之僅比著液位置45還外側的區域。亦即,基板W的上表面的外周區域42中的處理寬度係因應著液位置45與基板W的周端面44之間的距離而改變。
The processing
圖4係顯示基板W在傾斜狀態下被自轉夾具5保持的狀態之示意圖。圖5係用以顯示基板W在傾斜狀態下被自轉夾具5保持的狀態之示意圖。圖6係用以顯示參考基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。
FIG. 4 is a schematic diagram showing a state where the substrate W is held by the
自轉夾具5係用以支撐基板W的中央部之形式的自轉夾具。此種形式的自轉夾具係不支撐基板W的外周部41。因此,如圖4以及圖5所示,在基板W的保持狀態中,會有基板W相對於自轉夾具5傾斜之虞。
The
在針對基板W的外周部41之處理中,由於使基板W繞著旋轉軸線A1旋轉,因此當基板W相對於自轉夾具5呈傾斜時,會有基板W的周端中之配置有與處理液噴嘴19的處理位置對應之周方向位置的周端(配置有處理液噴嘴19之周方向位置的周端,以下稱為「配置位置周端46」)的高度位置變化之虞(面位移)。由於處理液噴嘴19朝斜下方噴出處理液,因此在處理液噴嘴19相對於自轉夾具5處於靜止姿勢之情形中,處理液的著液位置45與配置位置周端46之間的距離會隨著基板W的旋轉角度位置而變化。
In the processing of the outer
結果,如圖6所示,基板W的上表面的外周區域42的洗淨寬度會在周方向的各個位置產生偏差。當洗淨寬度存在大幅度的偏差時,變得必須察覺偏差而將中央的器件區域設定成較窄。因此,對於洗淨寬度要求高的精度。
As a result, as shown in FIG. 6, the cleaning width of the outer
圖7係用以說明基板處理裝置1的主要部分的電性構成之方塊圖。
7 is a block diagram for explaining the electrical configuration of the main part of the
控制裝置3係例如使用微電腦來構成。控制裝置3係具有CPU(Central Processing Unit;中央處理器)等運算單元51、固定記憶體器件(未圖示)、硬碟驅動器等記憶單元52、輸出單元53以及輸入單元(未圖示)。於記憶單元52記憶有讓運算單元51執行的程式。
The
記憶單元52係由可電性地覆寫資料之非揮發性記憶體所構成。記憶單元52係包含有:配方(recipe)記憶部54,係記憶有配方,該配方係規定針對基板W之各個處理的內容;各周端高度位置記憶部59,係記憶與被自轉夾具5保持的基板W的周方向的各周端位置中的高度方向(鉛直方向)V的位置(以下稱為「各周端高度位置」)有關的位置資訊;以及相位差記憶部55,係記憶相位差△P(參照圖8)。
The
於控制裝置3連接有作為控制對象之自轉馬達18、臂搖動馬達22、臂升降馬達122、第一噴嘴移動機構30、第二噴嘴移動機構34、加熱器11的加熱源、藥液閥25、清洗液閥26B、第一氣體閥29、第二氣體閥33以及第三氣體閥38等。控制裝置3係控制自轉馬達18、臂搖動馬達22、臂升降馬達122、第一噴嘴移動機構30、第二噴嘴移動機
構34以及加熱器11的動作。此外,控制裝置3係將閥(25、26B、29、33、38)等予以開閉。
The
在進行這些控制對象的控制時,輸出單元53係將驅動訊號輸送至各個控制對象,控制對象係被輸入該驅動訊號,藉此控制對象係執行因應了驅動訊號的驅動動作。例如在欲控制臂升降馬達122來驅動噴嘴臂20之情形中,輸出單元53係將噴嘴驅動訊號57輸送至臂升降馬達122。而且,藉由對臂升降馬達122輸入噴嘴驅動訊號57,臂升降馬達122係以因應了噴嘴驅動訊號57的驅動動作驅動噴嘴臂20(亦即進行升降動作)。
During the control of these control objects, the
此外,於控制裝置3輸入有編碼器23的檢測輸出以及高度位置感測器147的檢測輸出。
In addition, the detection output of the
在本實施形態的外周部處理步驟(步驟S6、步驟S7)中,控制裝置3係以下述方式驅動處理液噴嘴19:基板W的上表面的外周區域42(參照圖3)中的著液位置45係一邊與配置位置周端46之間的間隔保持一定,一邊追隨配置位置周端46的高度位置變化(以下稱為「高度位置變化」)而於高度方向V往復移動。更具體而言,處理液噴嘴19係追隨配置位置周端46的高度位置變化於高度方向V移動。藉此,能在基板W的外周部41中將著液位置45與配置位置周端46之間的間隔保持一定。此外,在本說明書中,所謂「使著液位置45往復移動」並非是以基板W作為基準往復移動,而是指以處於靜止狀態的物體(例如處理腔室4的隔壁13)作為基準往復移動。
In the outer peripheral processing step (step S6, step S7) of this embodiment, the
然而,為了控制裝置3與臂升降馬達122之間的噴嘴驅動訊號57的發送及接收以及伴隨噴嘴驅動訊號57的發送及接收之資料的讀入及資料解析,會有在處理液噴嘴19的驅動控制中處理液噴嘴19的驅動動作相對於來自控制裝置3的噴嘴驅動訊號57的輸出延遲之虞。
However, in order to send and receive the nozzle driving signal 57 between the
圖8係用以顯示配置位置周端46的高度位置變化之正弦波SW2以及已以著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最佳的追隨時序輸出噴嘴驅動訊號57之情形中的著液位置45的高度位置變化之正弦波SW1。
FIG. 8 is a sine wave SW2 showing the change of the height position of the
在已以著液位置45追隨配置位置周端46的高度位置變化之最佳的追隨時序輸出噴嘴驅動訊號57之情形中,如圖8所示,實際的處理液噴嘴19的高度位置變化(著液位置45的高度位置變化)的正弦波SW1(圖8中以實線所示)係從配置位置周端46的高度位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。以下將此種處理液噴嘴19的驅動延遲所伴隨之著液位置45相對於配置位置周端46的高度位置變化之相位差簡稱為「相位差△P」。
In the case where the nozzle driving signal 57 is output in time sequence with the optimal position of the
因此,在本實施形態中,將從控制裝置3朝臂升降馬達122之噴嘴驅動訊號57的輸出時序設定成從前述最佳的追隨時序提早(錯開)達至相當於相位差△P之時間,藉此實現以已排除相位差△P的排除時序將噴嘴驅動訊號57輸出至臂升降馬達122。以下,具體地說明。
Therefore, in the present embodiment, the output timing of the nozzle drive signal 57 from the
圖9A係用以說明圖7所示的各周端高度位置記憶部59之圖。於周端高度位置記憶部59記憶有關於各周端高度位置之位置資訊。具體而言,記憶有著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(將檢測出的缺口(notch)的位置作為基準之周方向相位)。這些位置資訊係基於各周端高度位置計測步驟(圖10的步驟S4)所計測的實測值之值。
FIG. 9A is a diagram for explaining the peripheral
圖9B係用以說明圖7所示的相位差記憶部55之圖。於周端高度位置記憶部59記憶有相位差△P。相位差△P係與彼此不同之複數個旋轉速度(基板W的旋轉速度)對應地被記憶。
FIG. 9B is a diagram for explaining the phase
圖10係用以說明處理單元2所為之基板處理例之流程圖。圖11係用以說明圖10所示的各周端高度位置計測步驟(步驟S4)的內容之流程圖。圖12係用以說明圖10所示的相位差計測步驟(步驟S5)的內容之流程圖。圖13係用以說明圖10所示的外周部處理步驟(步驟S6、步驟S7)的內容之流程圖。圖14以及圖15係用以說明外周部處理步驟(步驟S6、步驟S7)的內容之示意圖。圖16係用以顯示配置位置周端46的高度位置變化之正弦波SW2以及已在排除時序輸出噴嘴驅動訊號57之情形中的著液位置45的高度位置變化之正弦波SW1。圖17係用以顯示圖10的基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。
FIG. 10 is a flowchart for explaining an example of substrate processing by the
參照圖1、圖2、圖3、圖7、圖9A、圖9B以及圖10 說明該基板處理例。適當地參照圖11至圖17。 Refer to Figure 1, Figure 2, Figure 3, Figure 7, Figure 9A, Figure 9B, and Figure 10 This substrate processing example will be described. Refer to FIGS. 11 to 17 as appropriate.
首先,將未處理的基板W搬入至處理腔室4的內部(圖10的步驟S1)。具體而言,使正在保持基板W之搬運機器人CR的手部H進入至處理腔室4的內部,藉此在器件形成面朝向上方的狀態下將基板W授受至自轉夾具5。
First, the unprocessed substrate W is carried into the processing chamber 4 (step S1 in FIG. 10). Specifically, the hand H of the transfer robot CR holding the substrate W enters the inside of the
之後,當吸附支撐基板W的下表面中央部時,藉由自轉夾具5保持基板W(圖10的步驟S2)。在本實施形態中,未進行使用了定中心(centering)機構之基板W相對於自轉夾具5之中心對準。
After that, when the center portion of the lower surface of the support substrate W is sucked, the substrate W is held by the rotation jig 5 (step S2 in FIG. 10 ). In the present embodiment, the substrate W using the centering mechanism is not aligned with the center of the
基板W被自轉夾具5保持後,控制裝置3係控制自轉馬達18使基板W開始旋轉(圖10的步驟S3)。
After the substrate W is held by the
接著,控制裝置3係執行各周端高度位置計測步驟(圖10的步驟S4),該各周端高度位置計測步驟係計測被自轉夾具5保持的基板W的各周端高度位置。一併參照圖11,說明各周端高度位置計測步驟(步驟S4)。
Next, the
在各周端高度位置計測步驟(步驟S4)中,控制裝置3係使基板W的旋轉速度上升至預定的計測旋轉速度(比下述液體處理速度還慢的速度,例如約50rpm)並保持於該計測旋轉速度(圖11的步驟S11)。
In each peripheral end height position measurement step (step S4), the
當基板W的旋轉達至計測旋轉速度時(在步驟S11中為是),控制裝置3係使用高度位置感測器147開始計測各周端高度位置(圖11的步驟S12)。具體而言,控制裝置3係一邊控制自轉馬達18使基板W繞著旋轉軸線A1轉動,一邊藉由高度感測器147檢測基板W的周端面44中的預
定的計測對象位置的高度位置。於高度位置感測器147開始檢測後,當基板W結束至少轉動一圈(360°)時(在圖11的步驟S13中為是),當作已檢測出所有的各周端高度位置(是)並結束計測(圖11的步驟S14)。藉此,能檢測基板W相對於自轉夾具5之傾斜狀態。
When the rotation of the substrate W reaches the measurement rotation speed (Yes in step S11), the
控制裝置3係依據所計測的各周端高度位置算出著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(基於缺口的檢測之周方向相位)(圖11的步驟S15)。所算出的振幅A、週期PD以及相位P係記憶於各周端高度位置記憶部59(圖11的步驟S16)。之後,各周端高度位置計測步驟(步驟S4)係結束。各周端高度位置計測步驟(步驟S4)的執行時間係例如約5秒。
The
接著,控制裝置3係執行用以計測相位差△P(參照圖8)之相位差計測步驟(圖10的步驟S5)。一併參照圖12,說明相位差計測步驟(步驟S5)。
Next, the
在相位差計測步驟(步驟S5)中,計測已因應了下述外周部處理步驟(外周部藥液處理步驟(步驟S6)以及外周部清洗液處理步驟(步驟S7))中的基板W的旋轉速度(處理旋轉速度)之相位差△P。在外周部處理步驟中設定有複數個處理旋轉速度之情形中,計測與各個處理旋轉速度對應之相位差△P(亦即複數個相位差△P)。 In the phase difference measurement step (step S5), the rotation of the substrate W in the following peripheral processing steps (peripheral chemical solution processing step (step S6) and peripheral cleaning solution processing step (step S7)) has been measured The phase difference △P of speed (processing rotation speed). When a plurality of processing rotation speeds are set in the outer peripheral processing steps, the phase difference ΔP (that is, the plurality of phase differences ΔP) corresponding to each processing rotation speed is measured.
具體而言,控制裝置3係控制臂升降馬達122將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置
(圖12的步驟S21)。此外,控制裝置3係控制自轉馬達18使基板W的旋轉速度上升至預定的計測旋轉速度(亦即外周部處理步驟中的基板W的旋轉速度)並保持於該計測旋轉速度(圖12的步驟S22)。
Specifically, the
控制裝置3係依據各周端高度位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端高度位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖12的步驟S23)。
The
接著,當基板W的旋轉達至計測旋轉速度時(在步驟S22中為是),控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最適當的追隨時序輸出噴嘴驅動訊號57(圖12的步驟S24)。如參照圖8所述般,實際的著液位置45的高度位置變化的正弦波SW1(圖8中以實線所示)係從配置位置周端46的高度位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。控制裝置3係參照編碼器23的檢測輸出求出處理液噴嘴19的實際的高度位置變化(著液位置45的高度位置變化),並依據該實際的高度位置變化算出相位差△P(圖12的步驟S25)。所算出的相位差△P係記憶於各相位差記憶部55(圖12的步驟S26)。藉此,結束與
該旋轉速度對應之相位差△P的計測。在殘留有針對其他的旋轉速度之相位差△P的計測之情形中(在步驟S27中為是),返回至圖12的步驟S21。在已結束針對全部的旋轉速度之相位差△P的計測之情形中(在步驟S27中為否),結束相位差計測步驟(步驟S5)。
Next, when the rotation of the substrate W reaches the measured rotation speed (Yes in step S22), the
相位差計測步驟(步驟S5)結束後,接著,控制裝置3係執行外周部藥液處理步驟(外周部處理步驟,圖10的步驟S6),該外周部藥液處理步驟係使用藥液處理基板W的外周部41。外周部藥液處理步驟(步驟S6)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部藥液處理步驟(步驟S6)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的藥液的著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨配置位置周端46的高度位置變化於高度方向V往復移動。一併參照圖13,說明外周部藥液處理步驟(步驟S6)。
After the phase difference measurement step (step S5) ends, the
在外周部藥液處理步驟(步驟S6)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部藥液處理步驟(步驟S6)中的基板W的旋轉速度)(圖13的步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂升降馬達122,將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(圖13的步驟S31)。
In the peripheral chemical processing step (step S6), the
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥26B一邊開啟藥液閥25,藉此從處理液噴嘴19的噴出口19a開始噴出藥液(圖13的步驟S32)。此外,如圖14以及圖15所示,控制裝置3係開始執行前述著液位置往復移動步驟(圖13的步驟S33)。
When the rotation of the substrate W reaches the processing rotation speed, the
著液位置往復移動步驟(步驟S33)係如下方式進行。 The step of reciprocating the injection position (step S33) is performed as follows.
亦即,控制裝置3係依據各周端高度位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端高度位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖13的步驟S34)。
That is, the
接著,當基板W的旋轉達至處理旋轉速度時,控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在從前述最適當的追隨時序(亦即著液位置45與配置位置周端46之間的間隔保持一定)提早(錯開)達至相當於相位差△P的時間之排除時序輸出噴嘴驅動訊號57(圖13的步驟S35)。此時,控制裝置3係參照相位差記憶部55以所記憶的相位差△P中之與該處理旋轉速度對應之相位差△P獲得排除時序。
Then, when the rotation of the substrate W reaches the processing rotation speed, the
如圖16所示,在已在排除時序輸出噴嘴驅動訊號之情形中,實際的著液位置45的高度位置變化的正弦波SW1(在圖16中以實線所示)係幾乎或完全與配置位置周端46的高度位置變化的正弦波SW2(在圖16中以虛線所示)沒有相位
差。
As shown in FIG. 16, in the case where the nozzle driving signal has been output at the time sequence, the sine wave SW1 (shown with a solid line in FIG. 16) whose actual height of the
藉此,實現以已排除相位差△P之排除時序將噴嘴驅動訊號57輸出至臂升降馬達122。藉此,能以可使著液位置45追隨配置位置周端46的高度位置變化往復移動之時序輸出噴嘴驅動訊號57。藉此,能與相對於噴嘴驅動訊號57的輸出之處理液噴嘴19的驅動延遲無關地使著液位置45良好地追隨配置位置周端46的高度位置變化。因此,如圖17所示且如外周部處理步驟(步驟S6、步驟S7)所示般,能提升基板W的上表面的外周區域42中的處理寬度的均勻性。
In this way, the nozzle driving signal 57 is output to the
當從開始噴出藥液經過預先設定的期間時(在圖13的步驟S36中為是),控制裝置3係關閉藥液閥25。藉此,停止(結束)從處理液噴嘴19噴出藥液(圖13的步驟S37)。
When a predetermined period of time has elapsed since the discharge of the chemical solution (YES in step S36 of FIG. 13), the
此外,在外周部藥液處理步驟(步驟S6)中,加熱器11的熱源被開啟,藉由加熱器11加熱基板W的下表面的外周區域43。藉此,提高外周部藥液處理的處理速度。此外,在外周部藥液處理步驟(步驟S6)中,藉由從位於處理位置的氣體噴出噴嘴27噴出惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。藉由該放射狀氣流保護屬於器件形成區域之基板W的上表面中央部。此外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。能藉由該惰性氣體的噴吹控制基板W的上表面的外周區域42中的藥液的處理寬度。此
外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。能藉由該惰性氣體的噴吹防止藥液繞入至基板W的下表面。
In addition, in the outer peripheral chemical solution processing step (step S6), the heat source of the
第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係用以將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係用以將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以開閉第三氣體配管37。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係朝鉛直上方地將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。
The third inert
在外周部藥液處理步驟(步驟S6)結束後,接著,控制裝置3係執行外周部清洗液處理步驟(外周部處理步驟,圖10的步驟S7),該外周部清洗液處理步驟係使用清洗液處理基板W的外周部41。外周部清洗液處理步驟(步驟S7)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部清洗液處理步驟(步驟S7)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的清洗液的著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨配置位置周端46的高度位置變化於高度方向V往復移動。一併參照圖13,說明外周部清洗液處理步驟(步驟S7)。
After the outer peripheral chemical solution processing step (step S6) ends, the
在外周部清洗液處理步驟(步驟S7)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部清洗液處理步驟(步驟S7)中的基板W的旋轉速度)(步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂升降馬達122,將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(步驟S31)。
In the peripheral cleaning solution processing step (step S7), the
當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉藥液液閥25一邊開啟清洗液閥26B,藉此從處理液噴嘴19的噴出口19a開始噴出清洗液(步驟S32)。此外,控制裝置3係開始執行著液位置往復移動步驟(步驟S33)。由於著液位置往復移動步驟已在外周部藥液處理步驟(步驟S6)中說明完畢,故省略其說明(步驟S33)。當從開始噴出清洗液經過預先設定的期間時(在步驟S36中為是),控制裝置3係關閉清洗液閥26B。藉此,停止(結束)從處理液噴嘴19噴出清洗液(步驟S37)。
When the rotation of the substrate W reaches the processing rotation speed, the
此外,在外周部清洗液處理步驟(步驟S7)中,藉由從位於處理位置的氣體噴出閥27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。此外,在外周部清洗液處理步驟(步驟S7)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。此外,在外周部清洗液處理步驟(S7)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴吹惰性氣體。
在外周部清洗液處理步驟(S7)中,可將加熱器11的熱源開啟且藉由加熱器11加熱基板W的下表面的外周區域43,亦可不加熱基板W的下表面的外周區域43。
In addition, in the outer peripheral portion cleaning liquid processing step (step S7), a radial gas flow flowing from the central portion toward the outer
之後,控制裝置3係控制臂升降馬達122將處理液噴嘴19返回至自轉夾具5的側方的退避位置。
After that, the
接著,進行使基板W乾燥之旋乾(spin-drying)(圖10的步驟S8)。具體而言,控制裝置3係控制自轉馬達18使基板W加速至比各個處理步驟S2至步驟S8中的旋轉速度還高之乾燥旋轉速度(例如數千rpm),並使基板W以該乾燥旋轉速度旋轉。藉此,大的離心力施加至基板W上的液體,附著於基板W的外周部41的液體係被甩離至基板W的周圍。如此,從基板W的外周部41去除液體而使基板W的外周部41乾燥。
Next, spin-drying to dry the substrate W is performed (step S8 in FIG. 10 ). Specifically, the
當從基板W開始高速旋轉經過預定期間時,控制裝置3係藉由控制自轉馬達18而停止自轉夾具5所為之基板W的旋轉。
When a predetermined period of time has elapsed since the substrate W started to rotate at a high speed, the
之後,從處理腔室4內搬出基板W(圖10的步驟S9)。具體而言,控制裝置3係使搬運機器人CR的手部進入至處理腔室4的內部。接著,控制裝置3係使搬運機器人CR的手部保持自轉夾具5上的基板W。之後,控制裝置3係使搬運機器人CR的手部從處理腔室4內退避。藉此,從處理腔室4搬出處理後的基板W。
After that, the substrate W is carried out from the processing chamber 4 (step S9 in FIG. 10). Specifically, the
藉此,依據本實施形態,以下述方式驅動處理液噴嘴19:著液位置45係一邊與配置位置周端46之間的間隔保
持一定,一邊追隨配置位置周端46的高度位置變化往復移動。因此,能因應基板W的旋轉所伴隨之配置位置周端46的高度位置變化,使著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨。藉此,能不會受到基板W的旋轉所伴隨之配置位置周端46的高度位置變化之影響地高度地保持基板W的外周部41中的處理寬度的均勻性。
Thus, according to the present embodiment, the processing
此外,能一邊使被自轉夾具5保持的基板W繞著旋轉軸線A1轉動,一邊使用高度位置感測器147檢測基板W的周端面44的計測對象位置的高度位置,藉此良好地計測基板W的周方向的各周端位置。亦即,能使用位置感測器(高度位置感測器147)此種簡單的構成良好地計測基板W的周方向的各周端位置。
In addition, while rotating the substrate W held by the
此外,能使處理液噴嘴19移動並使用編碼器23檢測此時的處理液噴嘴19的移動量,藉此實際地計測相位差△P。由於依據實際測量的相位差△P來移動處理液噴嘴19,藉此能使著液位置45的往復移動更良好地追隨配置位置周端46的位置變化。
In addition, it is possible to move the processing
此外,於相位差記憶部55設置有複數個相位差△P,各個相位差△P係與基板W的處理旋轉速度對應地設置有複數個。而且,以已排除與處理旋轉速度對應的相位差△P之排除時序輸出噴嘴驅動訊號57。因此,即使在基板處理裝置1中外周部藥液處理步驟(步驟S6)中的基板W的處理旋轉速度根據配方的內容而不同之情形中,亦能以與各處
理旋轉速度對應之最適當的時序輸出噴嘴驅動訊號。
In addition, a plurality of phase differences ΔP are provided in the phase
以上,雖然已說明本發明的實施形態之一,但本發明亦可以其他的形態來實施。 Although one of the embodiments of the present invention has been described above, the present invention can be implemented in other forms.
例如,如圖7中以虛線所示般,亦可於記憶單元52設置有移動步驟執行旗標56,該移動步驟執行旗標56係用以決定是否在外周部處理步驟(步驟S6、步驟S7)中執行著液位置往復移動步驟(圖13的步驟S33)。於移動步驟執行旗標56選擇性地儲存有與著液位置往復移動步驟的執行對應之預定的值(例如「5A[H]」)以及與著液位置往復移動的非執行對應之預定的值(例如00[H])。而且,亦可作成為在移動步驟執行旗標56儲存有「5A[H]」之情形中控制裝置3係與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟,且在移動步驟執行旗標56儲存有「00[H]」之情形中控制裝置3係不與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟。
For example, as shown by the dotted line in FIG. 7, the
此外,雖然已說明在相位差計測步驟(步驟S5)中求出記憶於相位差記憶部55之複數個相位差△P的全部,但亦可在相位差計測步驟(步驟S5)中僅求出與至少一個處理旋轉速度對應的相位差△P,並藉由基於該相位差△P之運算求出與其他的處理旋轉速度對應之相位差△P。
In addition, although it has been described that all of the plurality of phase differences ΔP memorized in the phase
此外,雖然已說明使用相位差△P的實測值求出排除時序,但是記憶於相位差記憶部55的相位差△P亦可非為實測值而是預先設定的規定值。在此情形中,亦能從圖10所示的基板處理例省略相位差計測步驟(步驟S5)。
In addition, although it has been described that the actual measurement value of the phase difference ΔP is used to obtain the exclusion sequence, the phase difference ΔP stored in the phase
此外,亦可在著液位置往復移動步驟(步驟S33)中不以排除時序而是以前述最佳時序對臂升降馬達122輸出噴嘴驅動訊號57。在此情形中,亦可與著液位置往復移動步驟(步驟S33)並行地執行各周端高度位置計測步驟(步驟S4)。在此情形中,亦可依據各周端高度位置計測步驟(步驟S4)的計測結果反饋(feedback)控制著液位置45的往復移動。
In addition, the nozzle driving signal 57 may be output to the
此外,雖然在著液位置往復移動步驟(步驟S33)中使用用以使處理液噴嘴19於高度方向V往復移動之手法作為用以使著液位置45於高度方向V往復移動之手法,但亦可採用用以使處理液噴嘴19於徑方向RD往復移動之手法來取代。在此情形中,能使用臂搖動馬達22作為電動馬達。在此情形中,當於臂搖動馬達22結合有用以檢測臂搖動馬達22的輸出軸22a的旋轉角度之編碼器且臂搖動馬達22使輸出軸22a旋轉時,處理液噴嘴19係以已因應了輸出軸22a的旋轉角度之移動量繞著臂支撐軸21的中心軸線轉動。亦即,當處理液噴嘴19繞著臂支撐軸21的中心軸線轉動時,使臂搖動馬達22的輸出軸22a以與處理液噴嘴19的移動量相當之旋轉角度旋轉。因此,藉由編碼器檢測輸出軸22a的旋轉角度,能檢測處理液噴嘴19的位置。
In addition, although the method for reciprocating the processing
而且,在外周部處理步驟(步驟S6、步驟S7)中,控制裝置3係使處理液噴嘴19追隨該配置位置周端46的高度位置變化(以下稱為「高度位置變化」)而徑方向RD往復移動。藉此,在外周部處理步驟(步驟S6、步驟S7)中能將基板W的上表面的外周區域42(參照圖3)中的著液位置45與
配置位置周端46之間的間隔保持一定。
Further, in the outer peripheral processing steps (steps S6 and S7), the
此外,作為用以使著液位置45往復移動之手法,除了上述手法之外,亦能藉由組合高度方向V的往復移動與徑方向RD的往復移動或者改變處理液噴嘴19的噴出方向而使著液位置45於徑方向RD往復移動。
In addition, as a method for reciprocating the
此外,雖然已說明在各周端高度方向計測步驟(步驟S4)中使用高度位置感測器計測基板W的外周部41的高度位置並使用高度位置感測器計測基板W的周端面44的位置,但亦可使用高度位置感測器計測基板W的上表面的外周區域42,亦可使用高度位置感測器計測基板W的下表面的外周區域43。
In addition, although it has been described that the height position sensor is used to measure the height position of the outer
此外,雖然採用位置感測器(高度位置感測器147)作為各周端位置計測單元,但亦可採用CCD攝像機作為周端位置計測單元。 In addition, although a position sensor (height position sensor 147) is used as each peripheral end position measuring unit, a CCD camera may also be used as the peripheral end position measuring unit.
此外,作為噴嘴移動單元,雖然例舉用以使處理液噴嘴19一邊描繪圓弧軌跡一邊移動之掃描形式的噴嘴移動單元,但亦可採用用以使處理液噴嘴19直線狀地移動之直線移動形式的噴嘴移動單元。
In addition, as the nozzle moving unit, although a scanning type nozzle moving unit for moving the processing
此外,雖然已舉例說明處理液噴嘴19為用以噴出藥液以及清洗液兩者之處理液噴嘴,但亦可個別地設置有用以噴出藥液之處理液噴嘴(藥液噴嘴)以及用以噴出清洗液之處理液噴嘴(清洗液噴嘴)。
In addition, although it has been exemplified that the processing
此外,在前述各實施形態中,雖然已說明基板處理裝置為用以處理圓板狀的基板W之裝置,但只要基板W的 周端的至少一部分作成圓弧狀,則不一定需要為真圓。 In addition, in the foregoing embodiments, although the substrate processing apparatus has been described as an apparatus for processing the disk-shaped substrate W, as long as the substrate W At least a part of the peripheral end is formed into an arc shape, and it does not necessarily need to be a true circle.
本發明係與2017年2月28日於日本特許廳提出的日本特願2017-37562號對應,並將日本特願2017-37562號的所有內容援用於此。 The present invention corresponds to Japanese Patent Application No. 2017-37562 proposed by the Japan Patent Office on February 28, 2017, and all contents of Japanese Patent Application No. 2017-37562 are applied here.
2‧‧‧處理單元 2‧‧‧Processing unit
4‧‧‧處理腔室 4‧‧‧Process chamber
5‧‧‧自轉夾具 5‧‧‧Rotating fixture
6‧‧‧處理液供給單元 6‧‧‧Process liquid supply unit
8‧‧‧第一惰性氣體供給單元 8‧‧‧First inert gas supply unit
9‧‧‧第二惰性氣體供給單元 9‧‧‧Second inert gas supply unit
10‧‧‧第三惰性氣體供給單元 10‧‧‧The third inert gas supply unit
11‧‧‧加熱器 11‧‧‧heater
12‧‧‧處理罩 12‧‧‧Processing hood
12a‧‧‧上端部 12a‧‧‧Upper end
13‧‧‧隔壁 13‧‧‧ next door
14‧‧‧FFU 14‧‧‧FFU
15‧‧‧排氣導管 15‧‧‧Exhaust duct
16‧‧‧自轉軸 16‧‧‧spindle
17‧‧‧自轉基座 17‧‧‧rotation base
17a‧‧‧上表面 17a‧‧‧upper surface
18‧‧‧自轉馬達 18‧‧‧rotation motor
19‧‧‧處理液噴嘴 19‧‧‧treatment liquid nozzle
20‧‧‧噴嘴臂 20‧‧‧ nozzle arm
21‧‧‧臂支撐軸 21‧‧‧arm support shaft
22‧‧‧臂搖動馬達 22‧‧‧arm rocking motor
23‧‧‧編碼器 23‧‧‧Encoder
24‧‧‧藥液配管 24‧‧‧ liquid medicine piping
25‧‧‧藥液閥 25‧‧‧Medicine valve
26A‧‧‧清洗液配管 26A‧‧‧Cleaning liquid piping
26B‧‧‧清洗液閥 26B‧‧‧Cleaning liquid valve
27‧‧‧氣體噴出噴嘴 27‧‧‧ gas spray nozzle
28‧‧‧第一氣體配管 28‧‧‧First gas piping
29‧‧‧第一氣體閥 29‧‧‧ First gas valve
30‧‧‧第一噴嘴移動機構 30‧‧‧ First nozzle moving mechanism
31‧‧‧上外周部氣體噴嘴 31‧‧‧Upper peripheral gas nozzle
32‧‧‧第二氣體配管 32‧‧‧Second gas piping
33‧‧‧第二氣體閥 33‧‧‧Second gas valve
34‧‧‧第二噴嘴移動機構 34‧‧‧Second nozzle moving mechanism
36‧‧‧下外周部氣體噴嘴 36‧‧‧Lower outer gas nozzle
37‧‧‧第三氣體配管 37‧‧‧Third gas piping
38‧‧‧第三氣體閥 38‧‧‧The third gas valve
122‧‧‧臂升降馬達 122‧‧‧arm lift motor
122a‧‧‧輸出軸 122a‧‧‧ output shaft
147‧‧‧高度位置感測器 147‧‧‧ Height position sensor
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
A2‧‧‧搖動軸線 A2‧‧‧Shake axis
V‧‧‧高度方向 V‧‧‧ Height direction
W‧‧‧基板 W‧‧‧Substrate
Claims (19)
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JP2017-037562 | 2017-02-28 |
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JP (1) | JP6842952B2 (en) |
KR (1) | KR102278178B1 (en) |
CN (1) | CN110226216B (en) |
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WO (1) | WO2018159163A1 (en) |
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JP7145019B2 (en) * | 2018-09-19 | 2022-09-30 | 株式会社Screenホールディングス | Recipe conversion method, recipe conversion program, recipe conversion apparatus, and substrate processing system |
JP7261052B2 (en) * | 2019-03-26 | 2023-04-19 | 株式会社Screenホールディングス | SUBSTRATE PROCESSING APPARATUS AND TRANSPORT CONTROL METHOD THEREOF |
KR102714919B1 (en) * | 2019-06-28 | 2024-10-07 | 삼성전자주식회사 | Manufacturing equipment for semiconductor device |
KR102666439B1 (en) * | 2020-04-08 | 2024-05-17 | 세메스 주식회사 | Nozzle Apparatus and Apparatus for treating substrate |
DE102023205623A1 (en) * | 2023-06-15 | 2024-12-19 | Carl Zeiss Smt Gmbh | Method, device and computer program for determining an orientation of a sample on a sample table |
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JP6842952B2 (en) | 2021-03-17 |
CN110226216B (en) | 2023-06-20 |
TW201834103A (en) | 2018-09-16 |
CN110226216A (en) | 2019-09-10 |
KR20190100374A (en) | 2019-08-28 |
KR102278178B1 (en) | 2021-07-19 |
WO2018159163A1 (en) | 2018-09-07 |
JP2018142677A (en) | 2018-09-13 |
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