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TWI682474B - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method Download PDF

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TWI682474B
TWI682474B TW107102528A TW107102528A TWI682474B TW I682474 B TWI682474 B TW I682474B TW 107102528 A TW107102528 A TW 107102528A TW 107102528 A TW107102528 A TW 107102528A TW I682474 B TWI682474 B TW I682474B
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substrate
nozzle
processing
peripheral end
processing liquid
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TW107102528A
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TW201834103A (en
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武明励
安藤幸嗣
前川直嗣
石井弘晃
安武陽介
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
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    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
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    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • HELECTRICITY
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract

基板處理裝置係包含有:基板保持單元,係保持周端的至少一部分作成圓弧狀的基板,且支撐前述基板的中央部並保持前述基板;基板旋轉單元,係使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉;各周端高度位置計測單元,係用以計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;處理液噴嘴,係朝被前述基板保持單元保持的基板的外周部噴出處理液;處理液供給單元,係對前述處理液噴嘴供給處理液;噴嘴驅動單元,係以前述基板中之處理液的著液位置移動之方式驅動前述處理液噴嘴;以及控制裝置,係控制前述基板旋轉單元,且控制前述噴嘴驅動單元。前述控制裝置係執行:各周端高度位置計測步驟,係藉由前述各周端高度位置計測單元計測前述各周端高度位置;外周部處理步驟,係一邊使前述基板繞著前述旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴 嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 The substrate processing apparatus includes: a substrate holding unit that holds at least a part of the peripheral end in a circular arc shape and supports the central portion of the substrate to hold the substrate; and a substrate rotating unit that holds the substrate held by the substrate holding unit Rotating around the rotation axis passing through the central portion of the substrate; each peripheral end height position measuring unit is used to measure each peripheral end belonging to the height position among the peripheral end positions in the circumferential direction of the substrate held by the substrate holding unit The height position; the processing liquid nozzle, which discharges the processing liquid toward the outer periphery of the substrate held by the substrate holding unit; the processing liquid supply unit, which supplies the processing liquid to the processing liquid nozzle; the nozzle driving unit, which processes the substrate The treatment liquid nozzle is driven by the movement of the liquid injection position; and the control device controls the substrate rotation unit and controls the nozzle driving unit. The control device executes: each peripheral end height position measuring step, which measures the peripheral end height position by the peripheral end height position measuring unit; the outer peripheral part processing step, which rotates the substrate around the rotation axis, While ejecting the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and the reciprocating step of the liquid injection position is parallel to the outer peripheral portion processing step, and the processing liquid is driven in the following manner Nozzle: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate is arranged on the side of the peripheral end of the substrate with the processing liquid spray The arrangement position of the circumferential end of the mouth belonging to the circumferential direction is kept constant, and the reciprocating movement follows the change in the height position of the circumferential end of the arrangement position.

Description

基板處理裝置以及基板處理方法 Substrate processing device and substrate processing method

本發明係有關於一種基板處理裝置以及基板處理方法。成為處理對象之基板係包括例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Display;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等。 The invention relates to a substrate processing device and a substrate processing method. The substrates to be processed include, for example, semiconductor wafers, liquid crystal display device substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disc substrates, magnetic disc substrates, and optical magnetic disc substrates Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.

在半導體裝置或液晶顯示裝置等製造步驟中,對半導體晶圓或液晶顯示裝置用玻璃基板等基板的外周部進行使用了處理液的處理。用以逐片處理基板之葉片式的基板處理裝置(參照下述專利文獻1)係例如具備有:自轉夾具(spin chuck),係水平地保持基板並使基板旋轉;以及處理液噴嘴,係朝被自轉夾具保持的基板的上表面外周部噴出處理液。作為此種用以處理基板的外周部之基板處理裝置所使用之自轉夾具,並非是使用用以支撐基板的外周部之形式的自轉夾具,而是使用用以支撐基板的中央部之形式的自轉夾具。由於用以支撐基板的中央部之形式的自轉夾具係未支撐基板的外周部,因此會有在基板的保持狀態下基板相對於水平姿勢傾斜之虞。 In a manufacturing step such as a semiconductor device or a liquid crystal display device, the outer peripheral portion of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is treated with a processing liquid. A blade-type substrate processing apparatus for processing substrates piece by piece (see Patent Document 1 below) is provided with, for example, a spin chuck that holds the substrate horizontally and rotates the substrate; and a processing liquid nozzle, which faces The processing liquid is ejected from the outer periphery of the upper surface of the substrate held by the rotation jig. The rotation jig used for such a substrate processing apparatus for processing the outer peripheral portion of the substrate is not a rotation jig for supporting the outer peripheral portion of the substrate, but a rotation for supporting the central portion of the substrate Fixture. Since the rotation jig in the form of supporting the central portion of the substrate does not support the outer peripheral portion of the substrate, there is a possibility that the substrate is inclined with respect to the horizontal posture when the substrate is held.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:美國專利公開第2011/281376A1號公報。 Patent Document 1: US Patent Publication No. 2011/281376A1.

在針對基板的外周部之處理(以下稱為「外周部處理」)中,由於使基板繞著旋轉軸線旋轉,因此當基板相對於自轉夾具呈傾斜時,會有基板的周端中之配置有處理液噴嘴之旋轉方向位置的周端(以下稱為「配置位置周端」)的高度在各個旋轉方向位置進行變化之虞(面位移)。當配置位置周端的高度不同時,基板的上表面中之來自處理液噴嘴的處理液之著液位置與配置位置周端之間的距離會不同。因此,在處理液噴嘴相對於自轉夾具處於靜止姿勢之情形中,基板的上表面中之來自處理液噴嘴的處理液之著液位置與配置位置周端之間的距離會隨著基板的旋轉而變化。在此情形中,在外周部處理中無法將基板的外周部中的處理寬度的均勻性保持一定。 In the treatment of the outer periphery of the substrate (hereinafter referred to as "outer periphery treatment"), since the substrate is rotated around the rotation axis, when the substrate is inclined with respect to the rotation jig, there may be a processing liquid disposed in the peripheral end of the substrate The height of the circumferential end of the nozzle in the rotation direction (hereinafter referred to as the “arrangement position circumferential end”) may change in position in each rotation direction (plane displacement). When the height of the peripheral end of the arrangement position is different, the distance between the liquid injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position on the upper surface of the substrate will be different. Therefore, in the case where the processing liquid nozzle is in a stationary posture with respect to the rotation jig, the distance between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position in the upper surface of the substrate will change as the substrate rotates Variety. In this case, the uniformity of the processing width in the outer peripheral portion of the substrate cannot be kept constant during the outer peripheral processing.

因此,謀求能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 Therefore, it is desired to maintain the uniformity of the processing width in the outer peripheral portion of the substrate at a high level without being affected by the change in height position at the peripheral end of the arrangement position accompanying the rotation of the substrate.

因此,本發明的目的在於提供一種能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性之基板處理裝置以及基板處理方法。 Therefore, an object of the present invention is to provide a substrate processing apparatus and substrate processing capable of highly maintaining the uniformity of the processing width in the outer peripheral portion of the substrate without being affected by the change in the height of the peripheral end of the arrangement position accompanying the rotation of the substrate method.

本發明係包含有:基板保持單元,係保持周端的至少一部分作成圓弧狀的基板,且支撐前述基板的中央部並保持前述基板;基板旋轉單元,係使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉;各周端高度位置計測單元,係用以計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;處理液噴嘴,係朝被前述基板保持單元保持的基板的外周部噴出處理液;處理液供給單元,係對前述處理液噴嘴供給處理液;噴嘴驅動單元,係以前述基板中之處理液的著液位置移動之方式驅動前述處理液噴嘴;以及控制裝置,係控制前述基板旋轉單元、前述處理液供給單元、前述各周端高度位置計測單元以及前述噴嘴驅動單元;前述控制裝置係執行:各周端高度位置計測步驟,係藉由前述各周端高度位置計測單元計測前述各周端高度位置;外周部處理步驟,係一邊使前述基板繞著前述旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動之方式驅動前述處理液噴嘴。 The present invention includes: a substrate holding unit that holds at least a part of the peripheral end in a circular arc shape and supports the central portion of the substrate to hold the substrate; and a substrate rotating unit that winds the substrate held by the substrate holding unit Rotating through the rotation axis of the central portion of the substrate; each peripheral end height position measuring unit is used to measure the height of each peripheral end belonging to the height position among the peripheral end positions in the circumferential direction of the substrate held by the substrate holding unit Position; the processing liquid nozzle, which discharges the processing liquid toward the outer periphery of the substrate held by the substrate holding unit; the processing liquid supply unit, which supplies the processing liquid to the processing liquid nozzle; the nozzle driving unit, which uses the processing liquid in the substrate The liquid injection position is driven to drive the processing liquid nozzle; and the control device controls the substrate rotation unit, the processing liquid supply unit, the peripheral end height position measurement unit, and the nozzle driving unit; the control device executes: Each peripheral end height position measuring step measures the peripheral end height position by the peripheral end height position measuring unit; the outer peripheral portion processing step is to rotate the substrate around the rotation axis while removing the processing liquid nozzle The processing liquid is ejected toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and the reciprocating step of the liquid injection position is parallel to the outer peripheral portion processing step, and the processing liquid nozzle is driven in the following manner: the outer periphery of the substrate The position of the processing liquid from the processing liquid nozzle in the portion is maintained at a constant distance from the peripheral end of the peripheral end of the peripheral position of the circumferential position where the processing liquid nozzle is disposed in the peripheral end of the substrate The processing liquid nozzle is driven so as to reciprocate following the change in height position at the peripheral end of the arrangement position.

依據此構成,以下述方式驅動處理液噴嘴:處理液的著液位置係一邊與配置位置周端之間的間隔保持一定,一邊追隨配置位置周端的高度位置變化而往復移動。因此,能因應基板的旋轉所伴隨之配置位置周端的高度位置變化使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨。藉此,能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 According to this configuration, the processing liquid nozzle is driven in such a manner that the liquid injection position of the processing liquid is kept reciprocally while following the change in the height position of the circumferential end of the arrangement position while maintaining a constant distance from the circumferential end of the arrangement position. Therefore, it is possible to follow the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate, so that the liquid injection position of the processing liquid can be followed in such a manner that the distance from the peripheral end of the arrangement position is kept constant. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be maintained at a high level without being affected by the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate.

在本發明的實施形態之一中,前述控制裝置係於前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 In one embodiment of the present invention, the control device executes the reciprocating step of the liquid injection position after the step of measuring the height of each peripheral end.

依據此構成,可依據各周端高度位置計測步驟的結果執行著液位置往復移動步驟。 According to this configuration, the step of reciprocating the liquid position can be executed based on the results of the measuring steps of the height positions of the peripheral ends.

此外,前述噴嘴驅動單元亦可包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴。在此情形中,前述控制裝置亦可執行:噴嘴驅動訊號作成步驟,在前述著液位置往復移動步驟中,前述控制裝置係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊 號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 In addition, the nozzle driving unit may include a unit that is input with a nozzle driving signal for driving the processing liquid nozzle, thereby driving the processing liquid nozzle. In this case, the control device may also perform: a nozzle driving signal preparation step, and in the reciprocating step of the liquid injection position, the control device is based on the measurement result in the step of measuring the peripheral end height position and the peripheral processing The rotation speed of the substrate in the step is to create a nozzle driving signal for driving the processing liquid nozzle in such a manner that the liquid injection position will have the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position; and The driving signal output step is to output the created nozzle driving signal to the nozzle driving unit at the exclusion timing, and the exclusion timing has been relative to the nozzle driving signal The phase difference between the liquid injection position and the change in the height position relative to the peripheral end of the arrangement position accompanying the delay in driving the processing liquid nozzle at the output of the number is eliminated.

依據此構成,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的高度位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨配置位置周端的高度位置變化。 According to this configuration, in the reciprocating step of the liquid injection position, the nozzle for driving the processing liquid nozzle is made in such a manner that the liquid injection position of the processing liquid will move with the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position Drive signal. The nozzle driving signal is output to the nozzle driving unit at the elimination timing when the phase difference accompanying the driving delay of the processing liquid nozzle has been eliminated. That is, the nozzle driving signal is output at a timing that can follow the change in the height position at the peripheral end of the arrangement position and cause the liquid position to reciprocate. Thereby, the influence of the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal can be maintained, so that the injection position of the processing liquid can follow the circumferential end of the arrangement position at a certain distance from the circumferential end of the arrangement position The height position changes.

再者,前述控制裝置亦可在前述驅動訊號輸出步驟中執行時序取得步驟,前述時序取得步驟係從前述處理液噴嘴追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 In addition, the control device may also perform a timing acquisition step in the driving signal output step, the timing acquisition step is the most suitable chase from the processing liquid nozzle to follow the height position change of the peripheral position of the arrangement position, and the time sequence is staggered to the equivalent The time of the aforementioned phase difference, thereby obtaining the aforementioned timing of elimination.

依據此構成,從基板的外周部中之處理液的著液位置追隨配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於相位差之時間,藉此能求出排除時序。在此情形中,能簡單且正確地取得排除時序。 According to this configuration, the most appropriate tracking from the position of the treatment liquid in the outer peripheral portion of the substrate to the change in height position at the peripheral end of the arrangement position is shifted to the time corresponding to the phase difference, whereby the elimination timing can be obtained. In this case, the elimination timing can be obtained simply and correctly.

此外,前述噴嘴驅動單元亦可包含有:噴嘴移動單元,係使前述處理液噴嘴朝鉛直方向移動。在此情形中,前述 控制裝置亦可在前述著液位置往復移動步驟中執行下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 In addition, the nozzle driving unit may include a nozzle moving unit that moves the processing liquid nozzle in the vertical direction. In this case, the aforementioned The control device may also perform the following step in the reciprocating step of the liquid injection position: moving the processing liquid nozzle in the vertical direction following the change in height position at the peripheral end of the arrangement position.

依據此構成,在著液位置往復移動步驟中,使處理液噴嘴追隨配置位置周端的高度位置變化於鉛直方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this configuration, in the reciprocating step of the liquid application position, the processing liquid nozzle is moved in the vertical direction following the change in the height position of the peripheral end of the arrangement position. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.

此外,前述噴嘴驅動單元亦可包含有:噴嘴移動單元,係使前述處理液噴嘴沿著被前述基板保持單元保持的基板的主面移動。在此情形中,前述控制裝置亦可在前述著液位置往復移動步驟中執行下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 In addition, the nozzle driving unit may include a nozzle moving unit that moves the processing liquid nozzle along the main surface of the substrate held by the substrate holding unit. In this case, the control device may also perform the following steps in the reciprocating step of the liquid injection position: to maintain a constant interval between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position In this manner, the processing liquid nozzle is moved in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position.

依據此構成,在著液位置往復移動步驟中以將來自處理液噴嘴的處理液的著液位置與配置位置周端之間的間隔保持一定之方式,使處理液噴嘴追隨配置位置周端的高度位置變化朝旋轉半徑方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this configuration, in the reciprocating step of the liquid injection position, the processing liquid nozzle follows the height position of the peripheral end of the arrangement position in such a manner that the interval between the injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position is kept constant The change moves towards the radius of rotation. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.

此外,前述控制裝置亦可在前述著液位置往復移動步驟中執行使前述處理液噴嘴移動之步驟。前述基板處理裝置亦可進一步包含有:噴嘴移動量檢測單元,係用以檢測前述處理液噴嘴的移動量。在這些情形中,前述控制裝置 亦可在前述著液位置往復移動步驟之前進一步執行:相位差計測步驟,係對前述噴嘴移動單元輸出前述噴嘴驅動訊號並使前述處理液噴嘴移動,並藉由前述噴嘴移動量檢測單元檢測此時的前述處理液噴嘴的移動量,藉此計測前述相位差。前述控制裝置亦可在前述時序取得步驟中執行下述步驟:依據前述相位差計測步驟所計測的相位差取得前述排除時序。 In addition, the control device may execute a step of moving the processing liquid nozzle in the reciprocating step of the liquid injection position. The substrate processing apparatus may further include a nozzle movement amount detection unit for detecting the movement amount of the processing liquid nozzle. In these cases, the aforementioned control device It may be further executed before the reciprocating movement step of the liquid injection position: the phase difference measurement step is to output the nozzle driving signal to the nozzle moving unit and move the processing liquid nozzle, and detect the time by the nozzle movement amount detecting unit The amount of movement of the aforementioned processing liquid nozzle is used to measure the aforementioned phase difference. The control device may also perform the following steps in the timing acquisition step: acquiring the excluded timing based on the phase difference measured in the phase difference measurement step.

依據此構成,使處理液噴嘴移動並使用噴嘴移動量檢測單元檢測此時的處理液噴嘴的移動量,藉此能實際地計測相位差。由於依據實際測量的相位差移動處理液噴嘴,因此能使處理液的著液位置的往復移動更良好地追隨配置位置周端的高度位置變化。 According to this configuration, by moving the processing liquid nozzle and detecting the moving amount of the processing liquid nozzle at this time using the nozzle moving amount detection unit, the phase difference can be actually measured. Since the processing liquid nozzle is moved according to the actually measured phase difference, the reciprocating movement of the liquid injection position of the processing liquid can better follow the change in height position at the peripheral end of the arrangement position.

此外,前述噴嘴移動單元亦可包含有電動馬達,前述移動量檢測單元亦可包含有設置於前述電動馬達的編碼器。 In addition, the nozzle movement unit may include an electric motor, and the movement amount detection unit may include an encoder provided in the electric motor.

依據此構成,能以編碼器此種簡單的構成精度佳地檢測處理液噴嘴的移動量。能使處理液的著液位置的往復移動更高精度地追隨配置位置周端的高度位置變化。 According to this configuration, the movement amount of the processing liquid nozzle can be accurately detected with a simple configuration such as an encoder. The reciprocating movement of the liquid injection position of the processing liquid can follow the change in height position at the peripheral end of the arrangement position with higher accuracy.

此外,前述各周端高度位置計測單元亦可包含有位置感測器以及CCD(Charge Coupled Device;電荷耦合元件)攝像機中的至少一者,前述位置感測器係用以檢測前述基板的周端高度位置中之周方向的預定的周端高度位置,前述CCD攝像機係用以拍攝前述基板的至少外周部。 In addition, each of the peripheral end height position measuring units may also include at least one of a position sensor and a CCD (Charge Coupled Device; Charge Coupled Device) camera. The position sensor is used to detect the peripheral end of the substrate Among the height positions, a predetermined circumferential height position in the circumferential direction, the CCD camera is used to photograph at least the outer peripheral portion of the substrate.

依據此構成,能使用簡單的構成計測被基板保持單元 保持的基板的周方向的各周端高度位置。 According to this configuration, the substrate holding unit can be measured with a simple configuration The height position of each circumferential end of the held substrate in the circumferential direction.

此外,前述各周端高度位置計測單元亦可包含有:位置感測器,係用以檢測前述基板的周端高度位置中之周方向的預定的周端高度位置。在此情形中,前述控制裝置亦可在前述各周端高度位置計測步驟中執行下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用前述位置感測器計測前述預定的周端高度位置。 In addition, each of the peripheral end height position measuring units may further include a position sensor for detecting a predetermined peripheral end height position in the circumferential direction among the peripheral end height positions of the substrate. In this case, the control device may also perform the following steps in each of the peripheral end height position measurement steps: while rotating the substrate held by the substrate holding unit around the rotation axis, while using the position sensor for measurement The aforementioned predetermined circumferential height position.

依據此構成,一邊使被基板保持單元保持的基板轉動,一邊使用位置感測器計測預定的周端高度位置,藉此能計測基板的周方向的各周端高度位置。亦即,能使用位置感測器此種簡單的構成良好地計測基板的周方向的各周端高度位置。 According to this configuration, while rotating the substrate held by the substrate holding unit, a predetermined circumferential end height position is measured using a position sensor, whereby each circumferential end height position in the circumferential direction of the substrate can be measured. That is, it is possible to measure the height position of each peripheral end in the circumferential direction of the substrate with a simple configuration such as a position sensor.

此外,前述處理液噴嘴亦可朝基板的外側及斜下方噴出處理液。 In addition, the processing liquid nozzle may discharge the processing liquid toward the outside of the substrate and diagonally downward.

依據此構成,由於處理液噴嘴朝斜下方噴出處理液,因此會有處理液的著液位置與配置位置周端之間的距離因應基板的旋轉所伴隨之配置位置周端的高度位置變化而變化之虞。 According to this configuration, since the processing liquid nozzle discharges the processing liquid obliquely downward, the distance between the liquid injection position of the processing liquid and the peripheral end of the arrangement position varies depending on the height position change of the peripheral end of the arrangement position accompanying the rotation of the substrate Yu.

然而,由於使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨基板的旋轉所伴隨之配置位置周端的高度位置變化,因此能不受基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地將處理液的著液位置與配置位置周端之間的距離保持一定,藉此能高度保持基板的外周部中之處理寬度的均勻性。 However, since the liquid injection position of the processing liquid is kept constant at a distance from the peripheral end of the arrangement position, the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate changes, so it can be arranged without being accompanied by the rotation of the substrate The influence of the change of the height position at the peripheral end of the position keeps the distance between the filling position of the processing liquid and the peripheral end of the arrangement position constant, whereby the uniformity of the processing width in the outer peripheral portion of the substrate can be highly maintained.

此外,本發明係提供一種基板處理方法,係包含有:基板保持步驟,係藉由用以支撐基板的中央部並保持前述基板之基板保持單元,保持周端的至少一部分作成圓弧狀的基板;各周端高度位置計測步驟,係計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;外周部處理步驟,係一邊使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉,一邊從處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式藉由噴嘴驅動單元驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 In addition, the present invention provides a substrate processing method including: a substrate holding step, wherein a substrate holding unit for supporting the central portion of the substrate and holding the substrate, holding at least a part of the circumferential end of the substrate into an arc shape; Each peripheral end height position measurement step is to measure each peripheral end height position belonging to the height position among the peripheral end positions of the substrate held by the substrate holding unit in the circumferential direction; the outer peripheral portion processing step is to hold the substrate The substrate held by the unit rotates around the rotation axis passing through the central portion of the substrate, and the processing liquid is ejected from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; In parallel with the processing steps of the outer peripheral portion, the processing liquid nozzle is driven by the nozzle driving unit in the following manner: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate is on one side and in the peripheral end of the substrate The interval between the circumferential positions of the circumferential ends of the circumferential positions where the processing liquid nozzles are arranged is kept constant, while reciprocatingly following the change in the height position of the circumferential ends of the arrangement positions.

依據此方法,以下述方式驅動處理液噴嘴:處理液的著液位置係一邊與配置位置周端之間的間隔保持一定,一邊追隨配置位置周端的高度位置變化而往復移動。因此,能因應基板的旋轉所伴隨之配置位置周端的高度位置變化使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨。藉此,能不會受到基板的旋轉所伴隨之配置位置周端的高度位置變化之影響地高度地保持基板的外周部中的處理寬度的均勻性。 According to this method, the processing liquid nozzle is driven in such a manner that the liquid injection position of the processing liquid is kept at a constant distance from the peripheral end of the arrangement position while reciprocatingly following the change in the height position of the peripheral end of the arrangement position. Therefore, it is possible to follow the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate, so that the liquid injection position of the processing liquid can be followed in such a manner that the distance from the peripheral end of the arrangement position is kept constant. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be maintained at a high level without being affected by the change in the height position of the peripheral end of the arrangement position accompanying the rotation of the substrate.

在本發明的實施形態之一中,前述著液位置往復移動 步驟係包含有下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 In one embodiment of the present invention, the liquid injection position reciprocates The step includes the step of moving the processing liquid nozzle in the vertical direction following the change in height position of the peripheral end of the arrangement position.

依據此方法,在著液位置往復移動步驟中,使處理液噴嘴追隨配置位置周端的高度位置變化於鉛直方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this method, in the reciprocating step of the liquid application position, the processing liquid nozzle is moved in the vertical direction following the change in the height position of the peripheral end of the arrangement position. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.

此外,前述著液位置往復移動步驟亦可包含有下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 In addition, the reciprocating step of the liquid injection position may also include the step of causing the processing liquid to maintain a constant interval between the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position. The nozzle moves in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position.

依據此方法,在著液位置往復移動步驟中以將來自處理液噴嘴的處理液的著液位置與配置位置周端之間的間隔保持一定之方式,使處理液噴嘴追隨配置位置周端的高度位置變化朝旋轉半徑方向移動。藉此,能在基板的外周部中將處理液的著液位置與配置位置周端之間的間隔保持一定。 According to this method, in the reciprocating step of the liquid injection position, the processing liquid nozzle follows the height position of the peripheral end of the arrangement position in such a manner that the interval between the injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position is kept constant The change moves towards the radius of rotation. With this, it is possible to maintain a constant interval between the filling position of the processing liquid and the peripheral end of the arrangement position in the outer peripheral portion of the substrate.

此外,亦可在前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 In addition, the step of reciprocating the liquid injection position may be performed after the step of measuring the height of each peripheral end.

依據此方法,能依據各周端高度位置計測步驟的結果執行著液位置往復移動步驟。 According to this method, the step of reciprocating the liquid position can be performed according to the results of the measuring steps of the height positions of the peripheral ends.

此外,前述噴嘴驅動單元亦可包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴;前述著液位置往復移動步驟亦可包含有: 噴嘴驅動訊號作成步驟,係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 In addition, the nozzle driving unit may also include a unit in which a nozzle driving signal for driving the processing liquid nozzle is input to thereby drive the processing liquid nozzle; and the reciprocating step of the liquid application position may also include: The nozzle driving signal preparation step is based on the measurement result in the circumferential end height position measurement step and the rotation speed of the substrate in the outer peripheral part processing step, so that the liquid injection position changes with the height position of the circumferential position of the arrangement position A nozzle driving signal for driving the processing liquid nozzle is formed with the same amplitude and the same periodic movement method; and the driving signal output step is to output the created nozzle driving signal to the nozzle driving unit at the elimination timing. The exclusion sequence has eliminated the phase difference of the liquid injection position due to the change in the height position relative to the peripheral end of the arrangement position accompanying the driving delay of the processing liquid nozzle with respect to the output of the nozzle drive signal.

依據此方法,在著液位置往復移動步驟中,以處理液的著液位置會以與配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使處理液噴嘴驅動之噴嘴驅動訊號。該噴嘴驅動訊號係在已將處理液噴嘴的驅動延遲所伴隨之相位差予以排除之排除時序輸出至噴嘴驅動單元。亦即,在可追隨配置位置周端的高度位置變化使著液位置往復移動之時序輸出噴嘴驅動訊號。藉此,能不受相對於噴嘴驅動訊號的輸出之處理液噴嘴的驅動延遲之影響地,使處理液的著液位置以與配置位置周端之間的間隔保持一定之方式追隨配置位置周端的高度位置變化。 According to this method, in the reciprocating step of the liquid injection position, the nozzle for driving the processing liquid nozzle is made in such a manner that the liquid injection position of the processing liquid will change with the same amplitude and the same periodic movement as the height position change at the peripheral end of the arrangement position Drive signal. The nozzle driving signal is output to the nozzle driving unit at the elimination timing when the phase difference accompanying the driving delay of the processing liquid nozzle has been eliminated. That is, the nozzle driving signal is output at a timing that can follow the change in the height position at the peripheral end of the arrangement position and cause the liquid position to reciprocate. Thereby, the influence of the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal can be maintained, so that the injection position of the processing liquid can follow the circumferential end of the arrangement position at a certain distance from the circumferential end of the arrangement position The height position changes.

此外,前述驅動訊號輸出步驟亦可包含有:時序取得步驟,係從前述著液位置追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 In addition, the driving signal output step may also include a timing acquisition step, which is to shift the most appropriate chase from the liquid injection position to the height position change at the peripheral end of the arrangement position to a time corresponding to the phase difference, thereby Obtain the aforementioned exclusion sequence.

依據此方法,從基板的外周部中之處理液的著液位置追隨配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於相位差之時間,藉此能求出排除時序。在此情形中,能簡單且正確地取得排除時序。 According to this method, the most appropriate chase from the position of the treatment liquid in the outer peripheral portion of the substrate following the height position change of the peripheral end of the arrangement position is staggered by a time equivalent to the phase difference, whereby the elimination timing can be obtained. In this case, the elimination timing can be obtained simply and correctly.

前述基板處理方法亦可進一步包含有:相位差計測步驟,係在前述著液位置往復移動步驟之前對前述噴嘴驅動單元輸出前述噴嘴驅動訊號並使前述著液位置移動,藉此計測前述相位差。在此情形中,前述時序取得步驟亦可包含有下述步驟:依據前述相位差取得前述排除時序。 The substrate processing method may further include a phase difference measurement step, which is to output the nozzle drive signal to the nozzle drive unit and move the liquid injection position before the liquid injection position reciprocating step, thereby measuring the phase difference. In this case, the timing obtaining step may also include the following step: obtaining the excluded timing based on the phase difference.

依據此方法,由於依據實際測量的相位差移動處理液噴嘴,因此能使處理液的著液位置的往復移動更良好地追隨配置位置周端的高度位置變化。 According to this method, since the processing liquid nozzle is moved according to the actually measured phase difference, the reciprocating movement of the liquid injection position of the processing liquid can better follow the change in height position at the peripheral end of the arrangement position.

此外,前述各周端高度位置計測步驟亦可進一步包含有下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用位置感測器計測前述預定的周端高度位置。 In addition, the step of measuring the circumferential end height position may further include the step of measuring the predetermined circumferential end height position using a position sensor while rotating the substrate held by the substrate holding unit about the rotation axis .

依據此方法,一邊使被基板保持單元保持的基板轉動,一邊使用位置感測器檢測預定的周端高度位置,藉此能計測基板的周方向的各周端高度位置。亦即,能使用位置感測器此種簡單的構成良好地計測基板的周方向的各周端高度位置。 According to this method, while rotating the substrate held by the substrate holding unit, a predetermined circumferential end height position is detected using a position sensor, whereby each circumferential end height position in the circumferential direction of the substrate can be measured. That is, it is possible to measure the height position of each peripheral end in the circumferential direction of the substrate with a simple configuration such as a position sensor.

本發明的前述目的、特徵及功效以及其他的目的、特徵及功效係能參照隨附的圖式且藉由下述實施形態的說明而更明瞭。 The foregoing objects, features, and effects of the present invention and other objects, features, and effects can be made clearer by referring to the accompanying drawings and by the description of the following embodiments.

1‧‧‧基板處理裝置 1‧‧‧Substrate processing device

2‧‧‧處理單元 2‧‧‧Processing unit

3‧‧‧控制裝置 3‧‧‧Control device

4‧‧‧處理腔室 4‧‧‧Process chamber

5‧‧‧自轉夾具 5‧‧‧Rotating fixture

6‧‧‧處理液供給單元 6‧‧‧Process liquid supply unit

8‧‧‧第一惰性氣體供給單元 8‧‧‧First inert gas supply unit

9‧‧‧第二惰性氣體供給單元 9‧‧‧Second inert gas supply unit

10‧‧‧第三惰性氣體供給單元 10‧‧‧The third inert gas supply unit

11‧‧‧加熱器 11‧‧‧heater

12‧‧‧處理罩 12‧‧‧Processing hood

12a‧‧‧上端部 12a‧‧‧Upper end

13‧‧‧隔壁 13‧‧‧ next door

14‧‧‧FFU 14‧‧‧FFU

15‧‧‧排氣導管 15‧‧‧Exhaust duct

16‧‧‧自轉軸 16‧‧‧spindle

17‧‧‧自轉基座 17‧‧‧rotation base

17a‧‧‧上表面 17a‧‧‧upper surface

18‧‧‧自轉馬達 18‧‧‧rotation motor

19‧‧‧處理液噴嘴 19‧‧‧treatment liquid nozzle

19a‧‧‧噴出口 19a‧‧‧Spray outlet

20‧‧‧噴嘴臂 20‧‧‧ nozzle arm

21‧‧‧臂支撐軸 21‧‧‧arm support shaft

22‧‧‧臂搖動馬達 22‧‧‧arm rocking motor

22a、122a‧‧‧輸出軸 22a, 122a‧‧‧ output shaft

23‧‧‧編碼器 23‧‧‧Encoder

24‧‧‧藥液配管 24‧‧‧ liquid medicine piping

25‧‧‧藥液閥 25‧‧‧Medicine valve

26A‧‧‧清洗液配管 26A‧‧‧Cleaning liquid piping

26B‧‧‧清洗液閥 26B‧‧‧Cleaning liquid valve

27‧‧‧氣體噴出噴嘴 27‧‧‧ gas spray nozzle

28‧‧‧第一氣體配管 28‧‧‧First gas piping

29‧‧‧第一氣體閥 29‧‧‧ First gas valve

30‧‧‧第一噴嘴移動機構 30‧‧‧ First nozzle moving mechanism

31‧‧‧上外周部氣體噴嘴 31‧‧‧Upper peripheral gas nozzle

32‧‧‧第二氣體配管 32‧‧‧Second gas piping

33‧‧‧第二氣體閥 33‧‧‧Second gas valve

34‧‧‧第二噴嘴移動機構 34‧‧‧Second nozzle moving mechanism

36‧‧‧下外周部氣體噴嘴 36‧‧‧Lower outer gas nozzle

37‧‧‧第三氣體配管 37‧‧‧Third gas piping

38‧‧‧第三氣體閥 38‧‧‧The third gas valve

41‧‧‧外周部 41‧‧‧Outer periphery

42、43‧‧‧外周區域 42, 43‧‧‧ Peripheral area

44‧‧‧周端面 44‧‧‧week end

45‧‧‧著液位置 45‧‧‧Litting position

46‧‧‧配置位置周端 46‧‧‧ Configuration location

51‧‧‧運算單元 51‧‧‧ arithmetic unit

52‧‧‧記憶單元 52‧‧‧Memory unit

53‧‧‧輸出單元 53‧‧‧Output unit

54‧‧‧配方記憶部 54‧‧‧Recipe Memory Department

55‧‧‧相位差記憶部 55‧‧‧Phase difference memory

56‧‧‧移動步驟執行旗標 56‧‧‧Move step execution flag

57‧‧‧噴嘴驅動訊號 57‧‧‧ Nozzle drive signal

59‧‧‧周端高度位置記憶部 59‧‧‧Circumferential height position memory

122‧‧‧臂升降馬達 122‧‧‧arm lift motor

147‧‧‧高度位置感測器 147‧‧‧ Height position sensor

A‧‧‧振幅 A‧‧‧Amplitude

A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis

A2‧‧‧搖動軸線 A2‧‧‧Shake axis

C1‧‧‧承載器 C1‧‧‧Carrier

CR、IR‧‧‧搬運機器人 CR, IR‧‧‧handling robot

H‧‧‧手部 H‧‧‧Hand

LP‧‧‧卸載部 LP‧‧‧Unloading Department

P‧‧‧相位 P‧‧‧Phase

PD‧‧‧週期 PD‧‧‧cycle

RD‧‧‧徑方向 RD‧‧‧Diameter

SW1、SW2‧‧‧正弦波 SW1, SW2‧‧‧sine wave

V‧‧‧高度方向 V‧‧‧ Height direction

W‧‧‧基板 W‧‧‧Substrate

△P‧‧‧相位差 △P‧‧‧Phase difference

θ‧‧‧入射角 θ‧‧‧incidence angle

圖1係用以說明本發明的實施形態之一的基板處理裝置的內部的布局之示意性的俯視圖。 FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus according to an embodiment of the present invention.

圖2係用以說明前述基板處理裝置所具備的處理單元的構成例之示意性的剖視圖。 2 is a schematic cross-sectional view for explaining a configuration example of a processing unit included in the substrate processing apparatus.

圖3係用以顯示正從配置於處理位置的處理液噴嘴噴出處理液的狀態之剖視圖。 FIG. 3 is a cross-sectional view showing a state where the processing liquid is being discharged from the processing liquid nozzle arranged at the processing position.

圖4係顯示基板在傾斜狀態下被自轉夾具保持的狀態之示意圖。 FIG. 4 is a schematic diagram showing a state where the substrate is held by the rotation jig in an inclined state.

圖5係用以顯示基板在傾斜狀態下被自轉夾具保持的狀態之示意圖。 FIG. 5 is a schematic diagram showing a state where the substrate is held by the rotation jig in the inclined state.

圖6係用以顯示參考基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 6 is a plan view showing the processing width of the outer peripheral area of the upper surface of the substrate in the reference substrate processing example.

圖7係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 7 is a block diagram for explaining the electrical structure of the main part of the substrate processing apparatus.

圖8係用以顯示配置位置周端的高度位置變化之正弦波以及已在追隨時序輸出噴嘴驅動訊號之情形中的著液位置的高度位置變化之正弦波。 FIG. 8 is a sine wave for showing the change in the height position at the peripheral end of the arrangement position and the sine wave for the change in the height position of the liquid injection position in the case where the nozzle driving signal has been output in time.

圖9A係用以說明圖7所示的各周端高度位置記憶部之圖。 FIG. 9A is a diagram for explaining the height position memory portions of each peripheral end shown in FIG. 7.

圖9B係用以說明圖7所示的相位差記憶部之圖。 9B is a diagram for explaining the phase difference memory section shown in FIG. 7.

圖10係用以說明前述處理單元所為之基板處理例之流程圖。 FIG. 10 is a flowchart for explaining an example of substrate processing by the aforementioned processing unit.

圖11係用以說明圖10所示的各周端高度位置計測步 驟的內容之流程圖。 FIG. 11 is used to explain the measurement steps of the height position of each peripheral end shown in FIG. 10 Step by step flow chart.

圖12係用以說明圖10所示的相位差計測步驟的內容之流程圖。 FIG. 12 is a flowchart for explaining the content of the phase difference measurement procedure shown in FIG. 10.

圖13係用以說明圖10所示的外周部處理步驟的內容之流程圖。 FIG. 13 is a flowchart for explaining the content of the outer peripheral processing procedure shown in FIG. 10.

圖14係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 14 is a schematic diagram for explaining the contents of the aforementioned peripheral processing steps.

圖15係用以說明前述外周部處理步驟的內容之示意圖。 FIG. 15 is a schematic diagram for explaining the contents of the aforementioned peripheral processing steps.

圖16係用以顯示配置位置周端的高度位置變化之正弦波以及已在排除時序輸出噴嘴驅動訊號之情形中的著液位置的高度位置變化之正弦波。 FIG. 16 is a sine wave for showing the change in height position at the peripheral end of the arrangement position and the sine wave for the change in height position of the liquid injection position in the case where the nozzle driving signal is output in time sequence.

圖17係用以顯示前述基板處理例中的基板的上表面的外周區域的處理寬度之俯視圖。 17 is a plan view showing the processing width of the outer peripheral region of the upper surface of the substrate in the aforementioned substrate processing example.

在以下中,參照隨附的圖式詳細地說明本發明的實施形態。 In the following, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

圖1係用以說明本發明實施形態之一的基板處理裝置的內部的布局之示意性的俯視圖。基板處理裝置1係葉片式的裝置,用以藉由處理液或處理氣體逐片地處理半導體晶圓等圓板狀的基板W。基板處理裝置1係包含有:複數個處理單元2,係使用處理液處理基板W;裝載埠(load port)LP,係載置有承載器(carrier)C1,該承載器C1係用以收容被處理單元2處理之複數片基板W;搬運機器人IR 以及搬運機器人CR,係在裝載埠LP與處理單元2之間搬運基板W;以及控制裝置3,係控制基板處理裝置1。搬運機器人IR係在承載器C1與搬運機器人CR之間搬運基板W。搬運機器人CR係在搬運機器人IR與處理單元2之間搬運基板W。複數個處理單元2係例如具有同樣的構成。 FIG. 1 is a schematic plan view for explaining the internal layout of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a disc-shaped substrate W such as a semiconductor wafer piece by piece with a processing liquid or a processing gas. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing the substrate W with a processing liquid; and a load port LP in which a carrier C1 is mounted and the carrier C1 is used to receive Multiple substrates W processed by the processing unit 2; handling robot IR The transfer robot CR transfers the substrate W between the loading port LP and the processing unit 2; and the control device 3 controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C1 and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plural processing units 2 have the same configuration, for example.

圖2係用以說明處理單元2的構成例之示意性的剖視圖。 FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

處理單元2係用以使用處理液處理(頂側處理)基板W的外周部41(參照圖3等)之單元,更具體而言,處理單元2係用以使用處理液處理(頂側處理)基板W的上表面(主面)的外周區域42(參照圖3等)以及基板W的周端面44(參照圖3等)之單元。在本實施形態中,所謂基板W的外周部41係指包含有基板W的上表面的外周區域42、基板W的下表面(主面)的外周區域43(參照圖3等)以及基板W的周端面44之部分。此外,所謂外周區域42、43係指例如從基板W的周端緣起具有微距毫米(comma milli)至數毫米左右的寬度之環狀的區域。 The processing unit 2 is a unit for processing (top side processing) the outer peripheral portion 41 (refer to FIG. 3 and the like) of the substrate W using a processing liquid. More specifically, the processing unit 2 is used for processing (top side processing) using a processing liquid Units of the outer peripheral region 42 (see FIG. 3 and the like) of the upper surface (main surface) of the substrate W and the peripheral end surface 44 (see FIG. 3 and the like) of the substrate W. In the present embodiment, the outer peripheral portion 41 of the substrate W refers to an outer peripheral region 42 including the upper surface of the substrate W, an outer peripheral region 43 (see FIG. 3 etc.) of the lower surface (main surface) of the substrate W, and the substrate W Part of the circumferential end face 44. In addition, the outer peripheral regions 42 and 43 refer to, for example, a ring-shaped region having a width from a comma milli to a few millimeters from the peripheral edge of the substrate W.

處理單元2係包含有:箱形的處理腔室(processing chamber)4,係具有內部空間;自轉夾具(spin chuck)(基板保持單元)5,係在處理腔室4內以水平的姿勢保持一片基板W,並使基板W繞著通過基板W的中心之鉛直的旋轉軸線A1旋轉;處理液供給單元6,係用以將處理液(藥液以及清洗(rinse)液)供給至被自轉夾具5保持的基板W的上表面的外周區域42;第一惰性氣體供給單元8,係用以將惰性氣 體供給至被自轉夾具5保持的基板W的上表面中央部;第二惰性氣體供給單元9,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的外周區域42;第三惰性氣體供給單元10,係用以將惰性氣體供給至被自轉夾具5保持的基板W的下表面的外周區域43;加熱器11,係加熱被自轉夾具5保持的基板W的下表面的外周區域43;以及筒狀的處理罩(processing cup)12,係圍繞自轉夾具5。 The processing unit 2 includes: a box-shaped processing chamber 4 with an internal space; a spin chuck (substrate holding unit) 5 that holds a piece in a horizontal posture in the processing chamber 4 The substrate W rotates the substrate W about a vertical axis of rotation A1 passing through the center of the substrate W; the processing liquid supply unit 6 is used to supply the processing liquid (chemical liquid and rinse liquid) to the rotating jig 5 The outer peripheral area 42 of the upper surface of the substrate W held; the first inert gas supply unit 8 is used to The body is supplied to the central portion of the upper surface of the substrate W held by the rotation jig 5; the second inert gas supply unit 9 is used to supply an inert gas to the outer peripheral area 42 of the upper surface of the substrate W held by the rotation jig 5; Three inert gas supply units 10 for supplying inert gas to the outer peripheral region 43 of the lower surface of the substrate W held by the rotation jig 5; heater 11 for heating the outer periphery of the lower surface of the substrate W held by the rotation jig 5 Area 43; and a cylindrical processing cup (processing cup) 12, which surrounds the rotation jig 5.

處理腔室4係包含有:箱狀的隔壁13;作為送風單元的FFU(fan filter unit;風扇過濾器單元)14,係從隔壁13的上部將清淨空氣輸送至隔壁13內(相當於處理腔室4內);以及排氣裝置(未圖示),係從隔壁13的下部排出處理腔室4內的氣體。 The processing chamber 4 includes: a box-shaped partition wall 13; a fan filter unit (FFU) unit 14 as an air supply unit, which delivers clean air from the upper portion of the partition wall 13 into the partition wall 13 (equivalent to the processing chamber In the chamber 4); and an exhaust device (not shown), which exhausts the gas in the processing chamber 4 from the lower part of the partition wall 13.

FFU14係配置於隔壁13的上方,並安裝於隔壁13的頂部。FFU14係從隔壁13的頂部將清淨空氣輸送至處理腔室4內。排氣裝置係經由連接至處理罩12內的排氣導管15而連接至處理罩12的底部,用以從處理罩12的底部吸引處理罩12的內部。藉由FFU14以及排氣裝置,於處理腔室4內形成有降流(down flow)(下降流)。 The FFU 14 is arranged above the partition 13 and installed on the top of the partition 13. The FFU 14 sends clean air into the processing chamber 4 from the top of the partition 13. The exhaust device is connected to the bottom of the processing hood 12 via an exhaust duct 15 connected to the processing hood 12 for sucking the inside of the processing hood 12 from the bottom of the processing hood 12. The FFU 14 and the exhaust device form a downflow (downflow) in the processing chamber 4.

在本實施形態中,自轉夾具5為真空吸附式的夾具。自轉夾具5係吸附支撐基板W的下表面中央部。自轉夾具5係具備有:自轉軸(spin axis)16,係於鉛直的方向延伸;自轉基座(spin base)17,係安裝於該自轉軸16的上端,並以水平的姿勢吸附並保持基板W的下表面;以及自轉馬達(spin motor)(基板旋轉單元)18,係具有與自轉軸16同軸地 結合之旋轉軸。自轉基座17係包含有:水平的圓形的上表面17a,係具有比基板W的外徑還小的外徑。在基板W的背面被自轉基座17吸附保持的狀態下,基板W的外周部41係伸出至比自轉基座17的周端緣還外側。驅動自轉馬達18,藉此使基板W繞著自轉軸16的中心軸線旋轉。 In this embodiment, the rotation jig 5 is a vacuum suction type jig. The rotation jig 5 sucks and supports the central portion of the lower surface of the substrate W. The rotation jig 5 is provided with: a spin axis 16, which extends in a vertical direction; a spin base 17, which is mounted on the upper end of the spin axis 16, and sucks and holds the substrate in a horizontal posture The lower surface of W; and a spin motor (substrate rotating unit) 18, which is coaxial with the spin shaft 16 Combined rotation axis. The rotation base 17 includes a horizontal circular upper surface 17a, and has an outer diameter smaller than the outer diameter of the substrate W. In a state where the back surface of the substrate W is sucked and held by the rotation base 17, the outer peripheral portion 41 of the substrate W extends outside the peripheral edge of the rotation base 17. The rotation motor 18 is driven, thereby rotating the substrate W about the central axis of the rotation shaft 16.

處理液供給單元6係包含有處理液噴嘴19。處理液噴嘴19係例如為直式噴嘴(straight nozzle),以連續流動的狀態噴出液體。處理液噴嘴19係具有作為掃描噴嘴的基本形態,係能變更基板W的上表面中的處理液的供給位置。處理液噴嘴19係在自轉夾具5的上方安裝於大致水平地延伸的噴嘴臂20的前端部。噴嘴臂20係在自轉夾具5的側方被大致鉛直延伸的臂支撐軸21支撐。 The processing liquid supply unit 6 includes a processing liquid nozzle 19. The processing liquid nozzle 19 is, for example, a straight nozzle, and discharges liquid in a state of continuous flow. The processing liquid nozzle 19 has a basic form as a scanning nozzle, and can change the supply position of the processing liquid on the upper surface of the substrate W. The treatment liquid nozzle 19 is attached to the front end of the nozzle arm 20 that extends substantially horizontally above the rotation jig 5. The nozzle arm 20 is supported by an arm support shaft 21 extending substantially vertically on the side of the rotation jig 5.

於臂支撐軸21結合有臂搖動馬達22。臂搖動馬達22係例如為伺服馬達。能藉由臂搖動馬達22使噴嘴臂20以設定於自轉夾具5的側方之鉛直的搖動軸線A2(亦即臂支撐軸21的中心軸線)作為中心在水平面內搖動,藉此能使處理液噴嘴19繞著搖動軸線A2轉動。 An arm swing motor 22 is coupled to the arm support shaft 21. The arm swing motor 22 is, for example, a servo motor. By the arm rocking motor 22, the nozzle arm 20 can be shaken in a horizontal plane with the vertical rocking axis A2 (that is, the central axis of the arm support shaft 21) set on the side of the rotation jig 5 as the center, thereby enabling the treatment liquid The nozzle 19 rotates about the rocking axis A2.

於臂支撐軸21經由滾珠螺桿機構等結合有臂升降馬達122。臂升降馬達122係例如為伺服馬達。藉由臂升降馬達122,能使臂支撐軸21升降並使噴嘴臂20與臂支撐軸21一體性地升降。藉此,能使處理液噴嘴19升降(亦即沿著高度方向V(鉛直方向)移動)。於臂升降馬達122結合有編碼器23,該編碼器23係用以檢測臂升降馬達122的輸出軸122a的旋轉角度。當臂升降馬達122使輸出軸122a 旋轉時,處理液噴嘴19係以已因應了輸出軸22a的旋轉角度之移動量上升或下降。亦即,當處理液噴嘴19上升或下降時,使臂搖動馬達22的輸出軸22a以相當於處理液噴嘴19的移動量之旋轉角度旋轉。因此,藉由編碼器23檢測輸出軸22a的旋轉角度,藉此能檢測處理液噴嘴19的位置(高度方向V(鉛直方向)的位置)。 An arm lift motor 122 is coupled to the arm support shaft 21 via a ball screw mechanism or the like. The arm lift motor 122 is, for example, a servo motor. The arm lifting motor 122 can raise and lower the arm supporting shaft 21 and integrally raise and lower the nozzle arm 20 and the arm supporting shaft 21. With this, the processing liquid nozzle 19 can be raised and lowered (that is, moved in the height direction V (vertical direction)). An encoder 23 is coupled to the arm lifting motor 122, and the encoder 23 is used to detect the rotation angle of the output shaft 122 a of the arm lifting motor 122. When the arm lift motor 122 makes the output shaft 122a During the rotation, the processing liquid nozzle 19 rises or falls by the amount of movement in accordance with the rotation angle of the output shaft 22a. That is, when the processing liquid nozzle 19 is raised or lowered, the output shaft 22 a of the arm swing motor 22 is rotated at a rotation angle corresponding to the amount of movement of the processing liquid nozzle 19. Therefore, by detecting the rotation angle of the output shaft 22a by the encoder 23, the position of the processing liquid nozzle 19 (position in the height direction V (vertical direction)) can be detected.

於處理液噴嘴19連接有藥液配管24,該藥液配管24係被供給有來自藥液供給源的藥液。於藥液配管24的中途部夾設有用以開閉藥液配管24之藥液閥25。此外,於處理液噴嘴19連接有清洗液配管26A,該清洗液配管26A係被供給有來自清洗液供給源的清洗液。於清洗液配管26A的中途部夾設有用以開閉清洗液配管26A之清洗液閥26B。當在清洗液閥26B被關閉的狀態下開啟藥液閥25時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從藥液配管24供給至處理液噴嘴19之連續流動的藥液。此外,當在藥液閥25被關閉的狀態下開啟清洗液閥26B時,從設定於處理液噴嘴19的下端之噴出口19a(參照圖3)噴出從清洗液配管26A供給至處理液噴嘴19之連續流動的清洗液。 A chemical liquid pipe 24 is connected to the processing liquid nozzle 19, and the chemical liquid pipe 24 is supplied with a chemical liquid from a chemical liquid supply source. A chemical liquid valve 25 for opening and closing the chemical liquid piping 24 is interposed in the middle of the chemical liquid piping 24. In addition, a cleaning liquid pipe 26A is connected to the processing liquid nozzle 19, and the cleaning liquid pipe 26A is supplied with a cleaning liquid from a cleaning liquid supply source. A cleaning liquid valve 26B for opening and closing the cleaning liquid pipe 26A is provided in the middle of the cleaning liquid pipe 26A. When the chemical liquid valve 25 is opened with the cleaning liquid valve 26B closed, a continuous supply from the chemical liquid piping 24 to the processing liquid nozzle 19 is ejected from the discharge port 19a (see FIG. 3) set at the lower end of the processing liquid nozzle 19 Flowing liquid medicine. In addition, when the cleaning liquid valve 26B is opened in a state where the chemical liquid valve 25 is closed, the cleaning liquid pipe 26A is discharged from the discharge port 19a (see FIG. 3) set at the lower end of the processing liquid nozzle 19 and supplied to the processing liquid nozzle 19. Continuously flowing cleaning fluid.

藥液係例如為用以蝕刻基板W的表面或者洗淨基板W的表面之液體。藥液亦可為包含有氫氟酸、硫酸、醋酸、硝酸、鹽酸、緩衝氫氟酸(BHF;buffered HF)、稀釋氫氟酸(DHF;dilute hydrofluoric acid)、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH(Tetra Methyl Ammonium Hydroxide;氫氧化四甲銨)等)、有機溶劑(例如IPA(isopropyl alcohol;異丙醇)等)、界面活性劑、防腐蝕劑中的至少一者之液體。清洗液係例如為去離子水(DIW;deionized water),但並未限定於DIW,亦可為碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppm左右)的鹽酸水中的任一者。 The chemical liquid is, for example, a liquid for etching the surface of the substrate W or washing the surface of the substrate W. The drug solution can also contain hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF; buffered HF), dilute hydrofluoric acid (DHF; dilute hydrofluoric acid), ammonia water, hydrogen peroxide water, organic Acid (such as citric acid, oxalic acid, etc.), organic base (such as TMAH (Tetra Methyl Ammonium Hydroxide (tetramethylammonium hydroxide), etc.), an organic solvent (such as IPA (isopropyl alcohol; isopropyl alcohol), etc.), a liquid of at least one of a surfactant and a corrosion inhibitor. The cleaning liquid system is, for example, deionized water (DIW; deionized water), but it is not limited to DIW, and may also be carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm) Any of them.

第一惰性氣體供給單元8係包含有:氣體噴出噴嘴27,係用以將惰性氣體供給至被自轉夾具5保持的基板W的上表面的中央部;第一氣體配管28,係用以將惰性氣體供給至氣體噴出噴嘴27;第一氣體閥29,係將第一氣體配管28予以開閉;以及第一噴嘴移動機構30,係用以使氣體噴出噴嘴27移動。當在設定於基板W的上表面中央部的上方之處理位置中開啟第一氣體閥29時,藉由從氣體噴出噴嘴27噴出的惰性氣體於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。 The first inert gas supply unit 8 includes: a gas ejection nozzle 27 for supplying an inert gas to the central portion of the upper surface of the substrate W held by the rotation jig 5; and a first gas piping 28 for inert The gas is supplied to the gas ejection nozzle 27; the first gas valve 29 opens and closes the first gas piping 28; and the first nozzle movement mechanism 30 moves the gas ejection nozzle 27. When the first gas valve 29 is opened in the processing position set above the central portion of the upper surface of the substrate W, an inert gas ejected from the gas ejection nozzle 27 is formed above the substrate W from the central portion toward the outer peripheral portion 41 Flowing radial airflow.

第二惰性氣體供給單元9係包含有:上外周部氣體噴嘴31,係用以將惰性氣體噴出至基板W的上表面的外周區域42;第二氣體配管32,係用以將惰性氣體供給至上外周部氣體噴嘴31;第二氣體閥33,係用以將第二氣體配管32予以開閉;以及第二噴嘴移動機構34,係用以使上外周部氣體噴嘴31移動。當在與基板W的上表面的外周區域42對向之處理位置中開啟第二氣體閥33時,上外周部氣體噴嘴31係從基板W的旋轉半徑方向(以下稱為徑方向RD)的內側朝外側以及斜下方將惰性氣體噴出至基板W的上 表面的外周區域42的噴吹位置。藉此,能抑制基板W的上表面的外周區域42中的處理液的處理寬度。 The second inert gas supply unit 9 includes: an upper outer peripheral gas nozzle 31 for ejecting inert gas to the outer peripheral region 42 of the upper surface of the substrate W; and a second gas piping 32 for supplying inert gas to the upper The outer peripheral gas nozzle 31; the second gas valve 33 is used to open and close the second gas piping 32; and the second nozzle moving mechanism 34 is used to move the upper outer gas nozzle 31. When the second gas valve 33 is opened in the processing position opposed to the outer peripheral region 42 of the upper surface of the substrate W, the upper outer peripheral gas nozzle 31 is from the inside of the rotation radius direction of the substrate W (hereinafter referred to as the radial direction RD) The inert gas is sprayed onto the substrate W outward and diagonally downward The blowing position of the outer peripheral area 42 of the surface. With this, the processing width of the processing liquid in the outer peripheral region 42 of the upper surface of the substrate W can be suppressed.

第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以將第三氣體配管37予以開閉。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係從徑方向RD的內側朝外側斜上方(例如相對於水平面為45°)將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。 The third inert gas supply unit 10 includes: a lower outer peripheral gas nozzle 36 that jets an inert gas to the outer peripheral region 43 of the lower surface of the substrate W; and a third gas piping 37 that supplies an inert gas to the lower outer peripheral gas The nozzle 36; and the third gas valve 38 are used to open and close the third gas piping 37. When the third gas valve 38 is opened in the processing position opposed to the outer peripheral region 43 of the lower surface of the substrate W, the lower outer peripheral gas nozzle 36 is diagonally upward from the inside in the radial direction RD to the outside (for example, 45 relative to the horizontal plane) °) The inert gas is sprayed to the blowing position of the outer peripheral region 43 of the lower surface of the substrate W.

加熱器11係形成為圓環狀,並具有與基板W的外徑同等的外徑。加熱器11係具有上端面,該上端面係與被自轉夾具5保持的基板W的下表面的外周區域43對向。加熱器11係使用陶瓷或炭化矽(SiC)形成,並於內部埋設有加熱源(未圖示)。藉由加熱源的加熱溫熱加熱器11,加熱器11係加熱基板W。藉由加熱器11從下表面側加熱基板W的外周部41,藉此能提升基板W的上表面的外周區域42中的處理速率。 The heater 11 is formed in an annular shape and has an outer diameter equal to the outer diameter of the substrate W. The heater 11 has an upper end surface that faces the outer peripheral region 43 of the lower surface of the substrate W held by the rotation jig 5. The heater 11 is formed using ceramic or silicon carbide (SiC), and has a heating source (not shown) embedded in it. By heating the heater 11 by the heating source, the heater 11 heats the substrate W. The outer peripheral portion 41 of the substrate W is heated by the heater 11 from the lower surface side, whereby the processing rate in the outer peripheral area 42 of the upper surface of the substrate W can be increased.

處理罩12係配置於比被自轉夾具5保持的基板W還外側(遠離旋轉軸線A1的方向)。處理罩12係圍繞自轉基座17。當在自轉夾具5使基板W旋轉的狀態下對基板W供給處理液時,供給至基板W的處理液係被甩離至基板W的周圍。在對基板W供給處理液時,朝上開放的處理罩 12的上端部12a係配置於比自轉基座17還上方。因此,排出至基板W的周圍之藥液或水等處理液係被處理罩12接住。接著,被處理罩12接住的處理液係被排液處理。 The processing cover 12 is disposed outside the substrate W held by the rotation jig 5 (direction away from the rotation axis A1). The processing cover 12 surrounds the rotation base 17. When the substrate W is supplied with the processing liquid in a state where the rotation jig 5 rotates the substrate W, the processing liquid supplied to the substrate W is thrown away around the substrate W. When supplying the processing liquid to the substrate W, the processing cover opened upward The upper end portion 12a of 12 is arranged above the rotation base 17. Therefore, the processing liquid such as the chemical liquid or water discharged to the periphery of the substrate W is received by the processing cover 12. Next, the processing liquid system received by the processing cover 12 is drained.

此外,處理單元2係包含有:高度位置感測器(位置感測器)147,係用以檢測被自轉夾具5保持的基板W的周端的高度(鉛直方向)V的位置(以下簡稱為「高度位置」)。高度位置感測器147係針對基板W的周端面44中之預定的計測對象位置檢測基板W的周端面44的高度位置。在本實施形態中,藉由高度位置感測器147與控制裝置3構成周端高度位置位置計測單元。 In addition, the processing unit 2 includes a height position sensor (position sensor) 147 for detecting the position of the height (vertical direction) V of the peripheral end of the substrate W held by the rotation jig 5 (hereinafter abbreviated as " Height position"). The height position sensor 147 detects the height position of the peripheral end surface 44 of the substrate W with respect to a predetermined measurement target position in the peripheral end surface 44 of the substrate W. In this embodiment, the height position sensor 147 and the control device 3 constitute a peripheral end height position measurement unit.

圖3係用以顯示正從配置於處理位置的處理液噴嘴19噴出處理液的狀態之剖視圖。 FIG. 3 is a cross-sectional view showing a state where the processing liquid is being discharged from the processing liquid nozzle 19 arranged at the processing position.

處理液噴嘴19係配置於與基板W的上表面的外周區域42對向的處理位置。在此狀態下,當選擇性地開啟藥液閥25(參照圖2)以及清洗液閥26B(參照圖2)時,處理液噴嘴19係從徑方向RD的內側朝外側斜下方將處理液(藥液或清洗液)噴出至基板W的上表面的外周區域42的著液位置(以下簡稱為「著液位置45」)。由於從徑方向RD的內側朝著液位置45噴出處理液,因此能抑制或防止處理液朝屬於器件(device)形成區域之基板W的上表面中央部飛濺。此時,來自噴出口19a的處理液的噴出方向為沿著徑方向RD之方向,且為以預定角度射入至基板的上表面之方向。射入角度θ係例如約30°至約80°,較佳為約45°。著液至著液位置45的處理液係相對於著液位置45朝徑方向RD的 外側流動。藉由處理液處理基板W的上表面的外周區域42中之僅比著液位置45還外側的區域。亦即,基板W的上表面的外周區域42中的處理寬度係因應著液位置45與基板W的周端面44之間的距離而改變。 The processing liquid nozzle 19 is disposed at a processing position facing the outer peripheral region 42 of the upper surface of the substrate W. In this state, when the chemical liquid valve 25 (refer to FIG. 2) and the cleaning liquid valve 26B (refer to FIG. 2) are selectively opened, the processing liquid nozzle 19 obliquely lowers the processing liquid from the inside in the radial direction RD toward the outside ( The chemical liquid or the cleaning liquid is ejected to the liquid injection position of the outer peripheral region 42 of the upper surface of the substrate W (hereinafter referred to as "liquid injection position 45"). Since the processing liquid is ejected from the inner side in the radial direction RD toward the liquid position 45, it is possible to suppress or prevent the processing liquid from splashing toward the central portion of the upper surface of the substrate W belonging to the device formation region. At this time, the discharge direction of the processing liquid from the discharge port 19a is a direction along the radial direction RD, and is a direction to be incident on the upper surface of the substrate at a predetermined angle. The injection angle θ is, for example, about 30° to about 80°, preferably about 45°. The treatment liquid from the injection position to the injection position 45 is in the radial direction RD relative to the injection position 45 Flow outside. In the outer peripheral area 42 of the upper surface of the substrate W, only the area outside the liquid position 45 is processed by the processing liquid. That is, the processing width in the outer peripheral region 42 of the upper surface of the substrate W changes according to the distance between the liquid application position 45 and the peripheral end surface 44 of the substrate W.

圖4係顯示基板W在傾斜狀態下被自轉夾具5保持的狀態之示意圖。圖5係用以顯示基板W在傾斜狀態下被自轉夾具5保持的狀態之示意圖。圖6係用以顯示參考基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。 FIG. 4 is a schematic diagram showing a state where the substrate W is held by the rotation jig 5 in an inclined state. FIG. 5 is a schematic diagram showing a state where the substrate W is held by the rotation jig 5 in a tilted state. FIG. 6 is a plan view showing the processing width of the outer peripheral region 42 of the upper surface of the substrate W in the reference substrate processing example.

自轉夾具5係用以支撐基板W的中央部之形式的自轉夾具。此種形式的自轉夾具係不支撐基板W的外周部41。因此,如圖4以及圖5所示,在基板W的保持狀態中,會有基板W相對於自轉夾具5傾斜之虞。 The rotation jig 5 is a rotation jig in the form of supporting the central portion of the substrate W. This type of rotation jig does not support the outer peripheral portion 41 of the substrate W. Therefore, as shown in FIGS. 4 and 5, in the holding state of the substrate W, the substrate W may be inclined relative to the rotation jig 5.

在針對基板W的外周部41之處理中,由於使基板W繞著旋轉軸線A1旋轉,因此當基板W相對於自轉夾具5呈傾斜時,會有基板W的周端中之配置有與處理液噴嘴19的處理位置對應之周方向位置的周端(配置有處理液噴嘴19之周方向位置的周端,以下稱為「配置位置周端46」)的高度位置變化之虞(面位移)。由於處理液噴嘴19朝斜下方噴出處理液,因此在處理液噴嘴19相對於自轉夾具5處於靜止姿勢之情形中,處理液的著液位置45與配置位置周端46之間的距離會隨著基板W的旋轉角度位置而變化。 In the processing of the outer peripheral portion 41 of the substrate W, since the substrate W is rotated about the rotation axis A1, when the substrate W is inclined with respect to the rotation jig 5, there is a processing liquid nozzle 19 disposed at the peripheral end of the substrate W The processing position corresponds to the change in the height position (surface displacement) of the circumferential end of the circumferential position (the circumferential end where the processing liquid nozzle 19 is arranged in the circumferential direction, hereinafter referred to as "arrangement position circumferential end 46"). Since the processing liquid nozzle 19 discharges the processing liquid diagonally downward, when the processing liquid nozzle 19 is in a stationary posture with respect to the rotation jig 5, the distance between the liquid injection position 45 of the processing liquid and the peripheral end 46 of the arrangement position increases The rotation angle position of the substrate W varies.

結果,如圖6所示,基板W的上表面的外周區域42的洗淨寬度會在周方向的各個位置產生偏差。當洗淨寬度存在大幅度的偏差時,變得必須察覺偏差而將中央的器件區域設定成較窄。因此,對於洗淨寬度要求高的精度。 As a result, as shown in FIG. 6, the cleaning width of the outer peripheral region 42 of the upper surface of the substrate W may vary at various positions in the circumferential direction. When there is a large deviation in the washing width, it becomes necessary to detect the deviation and set the central device region to be narrow. Therefore, high accuracy is required for the washing width.

圖7係用以說明基板處理裝置1的主要部分的電性構成之方塊圖。 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

控制裝置3係例如使用微電腦來構成。控制裝置3係具有CPU(Central Processing Unit;中央處理器)等運算單元51、固定記憶體器件(未圖示)、硬碟驅動器等記憶單元52、輸出單元53以及輸入單元(未圖示)。於記憶單元52記憶有讓運算單元51執行的程式。 The control device 3 is configured using a microcomputer, for example. The control device 3 includes an arithmetic unit 51 such as a CPU (Central Processing Unit), a memory unit 52 such as a fixed memory device (not shown), a hard disk drive, an output unit 53, and an input unit (not shown). The memory unit 52 stores a program to be executed by the arithmetic unit 51.

記憶單元52係由可電性地覆寫資料之非揮發性記憶體所構成。記憶單元52係包含有:配方(recipe)記憶部54,係記憶有配方,該配方係規定針對基板W之各個處理的內容;各周端高度位置記憶部59,係記憶與被自轉夾具5保持的基板W的周方向的各周端位置中的高度方向(鉛直方向)V的位置(以下稱為「各周端高度位置」)有關的位置資訊;以及相位差記憶部55,係記憶相位差△P(參照圖8)。 The memory unit 52 is composed of a non-volatile memory that can electrically overwrite data. The memory unit 52 includes: a recipe memory section 54 that stores recipes that specify the contents of each process for the substrate W; each peripheral end height position memory section 59 that stores and is held by the rotation fixture 5 Position information about the position of the height direction (vertical direction) V (hereinafter referred to as the "height position of each peripheral end") of each circumferential end position of the substrate W in the circumferential direction of the substrate W; and the phase difference memory section 55, which stores the phase difference △P (refer to Figure 8).

於控制裝置3連接有作為控制對象之自轉馬達18、臂搖動馬達22、臂升降馬達122、第一噴嘴移動機構30、第二噴嘴移動機構34、加熱器11的加熱源、藥液閥25、清洗液閥26B、第一氣體閥29、第二氣體閥33以及第三氣體閥38等。控制裝置3係控制自轉馬達18、臂搖動馬達22、臂升降馬達122、第一噴嘴移動機構30、第二噴嘴移動機 構34以及加熱器11的動作。此外,控制裝置3係將閥(25、26B、29、33、38)等予以開閉。 The control device 3 is connected with a rotation motor 18, an arm swing motor 22, an arm lift motor 122, a first nozzle moving mechanism 30, a second nozzle moving mechanism 34, a heating source of the heater 11, a chemical liquid valve 25, The cleaning liquid valve 26B, the first gas valve 29, the second gas valve 33, the third gas valve 38, and the like. The control device 3 controls the rotation motor 18, the arm swing motor 22, the arm lift motor 122, the first nozzle moving mechanism 30, and the second nozzle moving machine Operation of the mechanism 34 and the heater 11. In addition, the control device 3 opens and closes the valves (25, 26B, 29, 33, 38) and the like.

在進行這些控制對象的控制時,輸出單元53係將驅動訊號輸送至各個控制對象,控制對象係被輸入該驅動訊號,藉此控制對象係執行因應了驅動訊號的驅動動作。例如在欲控制臂升降馬達122來驅動噴嘴臂20之情形中,輸出單元53係將噴嘴驅動訊號57輸送至臂升降馬達122。而且,藉由對臂升降馬達122輸入噴嘴驅動訊號57,臂升降馬達122係以因應了噴嘴驅動訊號57的驅動動作驅動噴嘴臂20(亦即進行升降動作)。 During the control of these control objects, the output unit 53 sends the drive signal to each control object, and the control object is inputted with the drive signal, whereby the control object executes the drive operation in response to the drive signal. For example, in the case where the arm lift motor 122 is to be controlled to drive the nozzle arm 20, the output unit 53 sends the nozzle drive signal 57 to the arm lift motor 122. Further, by inputting the nozzle driving signal 57 to the arm lifting motor 122, the arm lifting motor 122 drives the nozzle arm 20 in response to the driving operation of the nozzle driving signal 57 (that is, performs the lifting operation).

此外,於控制裝置3輸入有編碼器23的檢測輸出以及高度位置感測器147的檢測輸出。 In addition, the detection output of the encoder 23 and the detection output of the height position sensor 147 are input to the control device 3.

在本實施形態的外周部處理步驟(步驟S6、步驟S7)中,控制裝置3係以下述方式驅動處理液噴嘴19:基板W的上表面的外周區域42(參照圖3)中的著液位置45係一邊與配置位置周端46之間的間隔保持一定,一邊追隨配置位置周端46的高度位置變化(以下稱為「高度位置變化」)而於高度方向V往復移動。更具體而言,處理液噴嘴19係追隨配置位置周端46的高度位置變化於高度方向V移動。藉此,能在基板W的外周部41中將著液位置45與配置位置周端46之間的間隔保持一定。此外,在本說明書中,所謂「使著液位置45往復移動」並非是以基板W作為基準往復移動,而是指以處於靜止狀態的物體(例如處理腔室4的隔壁13)作為基準往復移動。 In the outer peripheral processing step (step S6, step S7) of this embodiment, the control device 3 drives the processing liquid nozzle 19 in the following manner: the liquid injection position in the outer peripheral area 42 (see FIG. 3) of the upper surface of the substrate W The 45 series is reciprocated in the height direction V following the change in height position of the arrangement end peripheral end 46 (hereinafter referred to as "height position change") while keeping the interval between the arrangement end peripheral end 46 constant. More specifically, the processing liquid nozzle 19 moves in the height direction V following the change in the height position of the peripheral end 46 of the arrangement position. As a result, in the outer peripheral portion 41 of the substrate W, the distance between the liquid injection position 45 and the peripheral end 46 of the arrangement position can be kept constant. In addition, in this specification, the term "reciprocating the liquid injection position 45" does not reciprocate based on the substrate W, but refers to reciprocating based on an object in a stationary state (for example, the partition wall 13 of the processing chamber 4). .

然而,為了控制裝置3與臂升降馬達122之間的噴嘴驅動訊號57的發送及接收以及伴隨噴嘴驅動訊號57的發送及接收之資料的讀入及資料解析,會有在處理液噴嘴19的驅動控制中處理液噴嘴19的驅動動作相對於來自控制裝置3的噴嘴驅動訊號57的輸出延遲之虞。 However, in order to send and receive the nozzle driving signal 57 between the control device 3 and the arm elevating motor 122, and to read in and analyze the data accompanying the sending and receiving of the nozzle driving signal 57, there is a drive in the processing liquid nozzle 19. The driving operation of the processing liquid nozzle 19 during control may be delayed relative to the output of the nozzle driving signal 57 from the control device 3.

圖8係用以顯示配置位置周端46的高度位置變化之正弦波SW2以及已以著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最佳的追隨時序輸出噴嘴驅動訊號57之情形中的著液位置45的高度位置變化之正弦波SW1。 FIG. 8 is a sine wave SW2 showing the change of the height position of the peripheral position 46 of the arrangement position and the position change of the peripheral position 46 that has followed the arrangement position of the liquid injection position 45 (that is, between the liquid injection position 45 and the circumferential end 46 of the arrangement position) The interval is kept constant). The best chase is to output the sine wave SW1 of the change of the height position of the liquid injection position 45 in the case where the nozzle driving signal 57 is output in time sequence.

在已以著液位置45追隨配置位置周端46的高度位置變化之最佳的追隨時序輸出噴嘴驅動訊號57之情形中,如圖8所示,實際的處理液噴嘴19的高度位置變化(著液位置45的高度位置變化)的正弦波SW1(圖8中以實線所示)係從配置位置周端46的高度位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。以下將此種處理液噴嘴19的驅動延遲所伴隨之著液位置45相對於配置位置周端46的高度位置變化之相位差簡稱為「相位差△P」。 In the case where the nozzle driving signal 57 is output in time sequence with the optimal position of the liquid position 45 following the change in the height position of the peripheral end 46 of the arrangement position, as shown in FIG. 8, the actual height position of the processing liquid nozzle 19 changes ( The sine wave SW1 (shown by the solid line in FIG. 8) of the liquid position 45 changes in height is delayed from the sine wave SW2 (shown by the broken line in FIG. 8) of the height position of the peripheral end 46 of the arrangement position to a predetermined time The phase difference △P. Hereinafter, the phase difference of the height position of the liquid application position 45 with respect to the arrangement position peripheral end 46 accompanying the driving delay of the processing liquid nozzle 19 will be simply referred to as “phase difference ΔP”.

因此,在本實施形態中,將從控制裝置3朝臂升降馬達122之噴嘴驅動訊號57的輸出時序設定成從前述最佳的追隨時序提早(錯開)達至相當於相位差△P之時間,藉此實現以已排除相位差△P的排除時序將噴嘴驅動訊號57輸出至臂升降馬達122。以下,具體地說明。 Therefore, in the present embodiment, the output timing of the nozzle drive signal 57 from the control device 3 to the arm lift motor 122 is set to be earlier (staggered) from the aforementioned optimal timing to a time equivalent to the phase difference ΔP, In this way, the nozzle driving signal 57 is output to the arm lift motor 122 at the timing of excluding the phase difference ΔP. The details will be described below.

圖9A係用以說明圖7所示的各周端高度位置記憶部59之圖。於周端高度位置記憶部59記憶有關於各周端高度位置之位置資訊。具體而言,記憶有著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(將檢測出的缺口(notch)的位置作為基準之周方向相位)。這些位置資訊係基於各周端高度位置計測步驟(圖10的步驟S4)所計測的實測值之值。 FIG. 9A is a diagram for explaining the peripheral position height memory 59 shown in FIG. 7. The peripheral end height position memory 59 stores position information about each peripheral end height position. Specifically, the amplitude A of the reciprocating movement of the liquid position 45, the period PD of the reciprocating movement of the liquid injection position 45, and the phase P of the reciprocating movement of the liquid injection position 45 (the position of the detected notch) is used as a reference Phase in the circumferential direction). The position information is based on the actual measured value measured in each circumferential end position measurement step (step S4 in FIG. 10).

圖9B係用以說明圖7所示的相位差記憶部55之圖。於周端高度位置記憶部59記憶有相位差△P。相位差△P係與彼此不同之複數個旋轉速度(基板W的旋轉速度)對應地被記憶。 FIG. 9B is a diagram for explaining the phase difference memory unit 55 shown in FIG. 7. A phase difference ΔP is stored in the peripheral end height position memory 59. The phase difference ΔP is stored in correspondence with a plurality of rotation speeds (rotation speed of the substrate W) that are different from each other.

圖10係用以說明處理單元2所為之基板處理例之流程圖。圖11係用以說明圖10所示的各周端高度位置計測步驟(步驟S4)的內容之流程圖。圖12係用以說明圖10所示的相位差計測步驟(步驟S5)的內容之流程圖。圖13係用以說明圖10所示的外周部處理步驟(步驟S6、步驟S7)的內容之流程圖。圖14以及圖15係用以說明外周部處理步驟(步驟S6、步驟S7)的內容之示意圖。圖16係用以顯示配置位置周端46的高度位置變化之正弦波SW2以及已在排除時序輸出噴嘴驅動訊號57之情形中的著液位置45的高度位置變化之正弦波SW1。圖17係用以顯示圖10的基板處理例中的基板W的上表面的外周區域42的處理寬度之俯視圖。 FIG. 10 is a flowchart for explaining an example of substrate processing by the processing unit 2. FIG. 11 is a flowchart for explaining the content of each peripheral end height position measurement step (step S4) shown in FIG. 10. FIG. 12 is a flowchart for explaining the contents of the phase difference measurement step (step S5) shown in FIG. 10. FIG. 13 is a flowchart for explaining the contents of the peripheral processing steps (step S6, step S7) shown in FIG. 10. 14 and 15 are schematic diagrams for explaining the contents of the peripheral processing steps (step S6, step S7). 16 is a sine wave SW2 showing the change in the height position of the peripheral position 46 of the arrangement position and the sine wave SW1 of the change in the height position of the liquid injection position 45 in the case where the nozzle driving signal 57 is output in a time sequence. FIG. 17 is a plan view showing the processing width of the outer peripheral region 42 of the upper surface of the substrate W in the substrate processing example of FIG. 10.

參照圖1、圖2、圖3、圖7、圖9A、圖9B以及圖10 說明該基板處理例。適當地參照圖11至圖17。 Refer to Figure 1, Figure 2, Figure 3, Figure 7, Figure 9A, Figure 9B, and Figure 10 This substrate processing example will be described. Refer to FIGS. 11 to 17 as appropriate.

首先,將未處理的基板W搬入至處理腔室4的內部(圖10的步驟S1)。具體而言,使正在保持基板W之搬運機器人CR的手部H進入至處理腔室4的內部,藉此在器件形成面朝向上方的狀態下將基板W授受至自轉夾具5。 First, the unprocessed substrate W is carried into the processing chamber 4 (step S1 in FIG. 10). Specifically, the hand H of the transfer robot CR holding the substrate W enters the inside of the processing chamber 4, whereby the substrate W is transferred to the rotation jig 5 with the device formation surface facing upward.

之後,當吸附支撐基板W的下表面中央部時,藉由自轉夾具5保持基板W(圖10的步驟S2)。在本實施形態中,未進行使用了定中心(centering)機構之基板W相對於自轉夾具5之中心對準。 After that, when the center portion of the lower surface of the support substrate W is sucked, the substrate W is held by the rotation jig 5 (step S2 in FIG. 10 ). In the present embodiment, the substrate W using the centering mechanism is not aligned with the center of the rotation jig 5.

基板W被自轉夾具5保持後,控制裝置3係控制自轉馬達18使基板W開始旋轉(圖10的步驟S3)。 After the substrate W is held by the rotation jig 5, the control device 3 controls the rotation motor 18 to start the rotation of the substrate W (step S3 in FIG. 10).

接著,控制裝置3係執行各周端高度位置計測步驟(圖10的步驟S4),該各周端高度位置計測步驟係計測被自轉夾具5保持的基板W的各周端高度位置。一併參照圖11,說明各周端高度位置計測步驟(步驟S4)。 Next, the control device 3 executes each peripheral end height position measurement step (step S4 in FIG. 10) which measures each peripheral end height position of the substrate W held by the rotation jig 5. Referring to Fig. 11 together, the procedure for measuring the height position of each peripheral end (step S4) will be described.

在各周端高度位置計測步驟(步驟S4)中,控制裝置3係使基板W的旋轉速度上升至預定的計測旋轉速度(比下述液體處理速度還慢的速度,例如約50rpm)並保持於該計測旋轉速度(圖11的步驟S11)。 In each peripheral end height position measurement step (step S4), the control device 3 increases the rotation speed of the substrate W to a predetermined measurement rotation speed (a speed slower than the liquid processing speed described below, for example, about 50 rpm) and maintains This measurement rotation speed (step S11 of FIG. 11).

當基板W的旋轉達至計測旋轉速度時(在步驟S11中為是),控制裝置3係使用高度位置感測器147開始計測各周端高度位置(圖11的步驟S12)。具體而言,控制裝置3係一邊控制自轉馬達18使基板W繞著旋轉軸線A1轉動,一邊藉由高度感測器147檢測基板W的周端面44中的預 定的計測對象位置的高度位置。於高度位置感測器147開始檢測後,當基板W結束至少轉動一圈(360°)時(在圖11的步驟S13中為是),當作已檢測出所有的各周端高度位置(是)並結束計測(圖11的步驟S14)。藉此,能檢測基板W相對於自轉夾具5之傾斜狀態。 When the rotation of the substrate W reaches the measurement rotation speed (Yes in step S11), the control device 3 uses the height position sensor 147 to start measuring the height position of each peripheral end (step S12 in FIG. 11). Specifically, the control device 3 controls the rotation motor 18 to rotate the substrate W about the rotation axis A1, and detects the pre-position in the peripheral end surface 44 of the substrate W by the height sensor 147 The height position of the measured object position. After the height position sensor 147 starts detection, when the substrate W finishes rotating at least one revolution (360°) (Yes in step S13 of FIG. 11), it is assumed that all the peripheral end height positions have been detected (yes ) And the measurement ends (step S14 in FIG. 11). With this, the tilt state of the substrate W with respect to the rotation jig 5 can be detected.

控制裝置3係依據所計測的各周端高度位置算出著液位置45的往復移動的振幅A、著液位置45的往復移動的週期PD以及著液位置45的往復移動的相位P(基於缺口的檢測之周方向相位)(圖11的步驟S15)。所算出的振幅A、週期PD以及相位P係記憶於各周端高度位置記憶部59(圖11的步驟S16)。之後,各周端高度位置計測步驟(步驟S4)係結束。各周端高度位置計測步驟(步驟S4)的執行時間係例如約5秒。 The control device 3 calculates the amplitude A of the reciprocating movement of the liquid position 45, the period PD of the reciprocating movement of the liquid position 45 and the phase P of the reciprocating movement of the liquid position 45 (based on the gap Phase in the circumferential direction of detection) (step S15 in FIG. 11). The calculated amplitude A, period PD, and phase P are stored in each peripheral end height position storage unit 59 (step S16 in FIG. 11 ). After that, each peripheral end height position measurement step (step S4) ends. The execution time of each peripheral end height position measurement step (step S4) is, for example, about 5 seconds.

接著,控制裝置3係執行用以計測相位差△P(參照圖8)之相位差計測步驟(圖10的步驟S5)。一併參照圖12,說明相位差計測步驟(步驟S5)。 Next, the control device 3 executes a phase difference measurement step (step S5 in FIG. 10) for measuring the phase difference ΔP (refer to FIG. 8). Referring to FIG. 12 together, the phase difference measurement procedure (step S5) will be described.

在相位差計測步驟(步驟S5)中,計測已因應了下述外周部處理步驟(外周部藥液處理步驟(步驟S6)以及外周部清洗液處理步驟(步驟S7))中的基板W的旋轉速度(處理旋轉速度)之相位差△P。在外周部處理步驟中設定有複數個處理旋轉速度之情形中,計測與各個處理旋轉速度對應之相位差△P(亦即複數個相位差△P)。 In the phase difference measurement step (step S5), the rotation of the substrate W in the following peripheral processing steps (peripheral chemical solution processing step (step S6) and peripheral cleaning solution processing step (step S7)) has been measured The phase difference △P of speed (processing rotation speed). When a plurality of processing rotation speeds are set in the outer peripheral processing steps, the phase difference ΔP (that is, the plurality of phase differences ΔP) corresponding to each processing rotation speed is measured.

具體而言,控制裝置3係控制臂升降馬達122將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置 (圖12的步驟S21)。此外,控制裝置3係控制自轉馬達18使基板W的旋轉速度上升至預定的計測旋轉速度(亦即外周部處理步驟中的基板W的旋轉速度)並保持於該計測旋轉速度(圖12的步驟S22)。 Specifically, the control device 3 controls the arm lifting motor 122 to arrange the processing liquid nozzle 19 at a processing position opposed to the outer peripheral area 42 of the upper surface (Step S21 of FIG. 12). In addition, the control device 3 controls the rotation motor 18 to increase the rotation speed of the substrate W to a predetermined measurement rotation speed (that is, the rotation speed of the substrate W in the outer peripheral processing step) and to maintain the measurement rotation speed (step of FIG. 12 S22).

控制裝置3係依據各周端高度位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端高度位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖12的步驟S23)。 The control device 3 is based on the amplitude A, the period PD, and the phase P (the measurement result of each peripheral end height position measurement step (step S4)) memorized by each peripheral end height position storage unit 59, and the liquid injection position 45 will be arranged in accordance with The position of the position peripheral end 46 changes with the same amplitude A and the same period PD movement to form a nozzle drive signal 57 for driving the processing liquid nozzle 19 (nozzle drive signal creation step, step S23 in FIG. 12 ).

接著,當基板W的旋轉達至計測旋轉速度時(在步驟S22中為是),控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在著液位置45追隨配置位置周端46的位置變化(亦即著液位置45與配置位置周端46之間的間隔保持一定)之最適當的追隨時序輸出噴嘴驅動訊號57(圖12的步驟S24)。如參照圖8所述般,實際的著液位置45的高度位置變化的正弦波SW1(圖8中以實線所示)係從配置位置周端46的高度位置變化的正弦波SW2(圖8中以虛線所示)延遲達至預定的相位差△P。控制裝置3係參照編碼器23的檢測輸出求出處理液噴嘴19的實際的高度位置變化(著液位置45的高度位置變化),並依據該實際的高度位置變化算出相位差△P(圖12的步驟S25)。所算出的相位差△P係記憶於各相位差記憶部55(圖12的步驟S26)。藉此,結束與 該旋轉速度對應之相位差△P的計測。在殘留有針對其他的旋轉速度之相位差△P的計測之情形中(在步驟S27中為是),返回至圖12的步驟S21。在已結束針對全部的旋轉速度之相位差△P的計測之情形中(在步驟S27中為否),結束相位差計測步驟(步驟S5)。 Next, when the rotation of the substrate W reaches the measured rotation speed (Yes in step S22), the control device 3 detects the rotation of the output shaft of the rotation motor 18 based on an encoder (not shown) The rotation angle position of the substrate W follows the position change of the placement position peripheral end 46 at the filling position 45 (that is, the interval between the filling position 45 and the placement position peripheral end 46 is kept constant). Signal 57 (step S24 in FIG. 12). As described with reference to FIG. 8, the sine wave SW1 (shown with a solid line in FIG. 8) whose height position of the actual liquid injection position 45 changes is the sine wave SW2 (FIG. 8) that changes from the height position of the peripheral end 46 of the arrangement position (Indicated by the dotted line in) The delay reaches the predetermined phase difference ΔP. The control device 3 refers to the detection output of the encoder 23 to obtain the actual height position change of the processing liquid nozzle 19 (the height position change of the liquid application position 45), and calculates the phase difference ΔP based on the actual height position change (FIG. 12 Step S25). The calculated phase difference ΔP is stored in each phase difference memory unit 55 (step S26 in FIG. 12 ). By this, end with Measurement of the phase difference ΔP corresponding to the rotation speed. When the measurement of the phase difference ΔP for other rotation speeds remains (YES in step S27), the process returns to step S21 in FIG. 12. When the measurement of the phase difference ΔP for all the rotation speeds has been completed (NO in step S27), the phase difference measurement step (step S5) is ended.

相位差計測步驟(步驟S5)結束後,接著,控制裝置3係執行外周部藥液處理步驟(外周部處理步驟,圖10的步驟S6),該外周部藥液處理步驟係使用藥液處理基板W的外周部41。外周部藥液處理步驟(步驟S6)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部藥液處理步驟(步驟S6)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的藥液的著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨配置位置周端46的高度位置變化於高度方向V往復移動。一併參照圖13,說明外周部藥液處理步驟(步驟S6)。 After the phase difference measurement step (step S5) ends, the control device 3 then executes a peripheral chemical processing step (peripheral processing step, step S6 in FIG. 10), which uses a chemical to process the substrate The outer periphery 41 of W. The chemical liquid processing step (step S6) of the outer peripheral portion is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1000 rpm). In addition, the control device 3 executes a liquid position reciprocating step in parallel with the outer peripheral portion chemical liquid processing step (step S6), which causes the chemical liquid in the outer peripheral area 42 of the upper surface of the substrate W The liquid injection position 45 is reciprocated in the height direction V following the change in the height position of the arrangement position peripheral end 46 so that the interval between the liquid injection position 45 and the arrangement position peripheral end 46 is kept constant. Referring to FIG. 13 together, the procedure for processing the chemical solution in the outer periphery (step S6) will be described.

在外周部藥液處理步驟(步驟S6)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部藥液處理步驟(步驟S6)中的基板W的旋轉速度)(圖13的步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂升降馬達122,將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(圖13的步驟S31)。 In the peripheral chemical processing step (step S6), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotational speed (that is, the substrate in the peripheral chemical processing step (step S6)) (Rotation speed of W) (step S30 in FIG. 13). In addition, in the case where the processing liquid nozzle 19 is located at the retreat position, the control device 3 controls the arm lift motor 122 to arrange the processing liquid nozzle 19 at a processing position opposed to the outer peripheral area 42 of the upper surface (step S31 in FIG. 13) .

當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉清洗液閥26B一邊開啟藥液閥25,藉此從處理液噴嘴19的噴出口19a開始噴出藥液(圖13的步驟S32)。此外,如圖14以及圖15所示,控制裝置3係開始執行前述著液位置往復移動步驟(圖13的步驟S33)。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the chemical liquid valve 25 while closing the cleaning liquid valve 26B, whereby the chemical liquid is discharged from the discharge port 19a of the processing liquid nozzle 19 (step S32 in FIG. 13) ). In addition, as shown in FIGS. 14 and 15, the control device 3 starts to execute the aforementioned reciprocating step of the liquid injection position (step S33 in FIG. 13 ).

著液位置往復移動步驟(步驟S33)係如下方式進行。 The step of reciprocating the injection position (step S33) is performed as follows.

亦即,控制裝置3係依據各周端高度位置記憶部59所記憶的振幅A、週期PD以及相位P(各周端高度位置計測步驟(步驟S4)的計測結果),以著液位置45會以與配置位置周端46的位置變化相同的振幅A以及相同的週期PD移動之方式作成用以使處理液噴嘴19驅動之噴嘴驅動訊號57(噴嘴驅動訊號作成步驟,圖13的步驟S34)。 That is, the control device 3 is based on the amplitude A, the period PD, and the phase P (the measurement result of each peripheral end height position measurement step (step S4)) memorized by the peripheral end height position memory 59, and the liquid position 45 will The nozzle driving signal 57 for driving the processing liquid nozzle 19 (the nozzle driving signal creation step, step S34 in FIG. 13) is prepared with the same amplitude A and the same period PD movement as the position change of the arrangement end 46.

接著,當基板W的旋轉達至處理旋轉速度時,控制裝置3係依據用以檢測自轉馬達18的輸出軸的旋轉量之編碼器(未圖示)所檢測之基板W的旋轉角度位置,在從前述最適當的追隨時序(亦即著液位置45與配置位置周端46之間的間隔保持一定)提早(錯開)達至相當於相位差△P的時間之排除時序輸出噴嘴驅動訊號57(圖13的步驟S35)。此時,控制裝置3係參照相位差記憶部55以所記憶的相位差△P中之與該處理旋轉速度對應之相位差△P獲得排除時序。 Then, when the rotation of the substrate W reaches the processing rotation speed, the control device 3 is based on the rotation angle position of the substrate W detected by an encoder (not shown) for detecting the rotation amount of the output shaft of the rotation motor 18 at Output the nozzle drive signal 57 (exclude timing) from the most suitable chase sequence (that is, the interval between the filling position 45 and the peripheral end 46 of the arrangement position is kept constant) early (staggered) to a time equivalent to the phase difference △P Step S35 of FIG. 13). At this time, the control device 3 refers to the phase difference memory unit 55 to obtain the exclusion sequence with the phase difference ΔP corresponding to the processing rotation speed among the stored phase differences ΔP.

如圖16所示,在已在排除時序輸出噴嘴驅動訊號之情形中,實際的著液位置45的高度位置變化的正弦波SW1(在圖16中以實線所示)係幾乎或完全與配置位置周端46的高度位置變化的正弦波SW2(在圖16中以虛線所示)沒有相位 差。 As shown in FIG. 16, in the case where the nozzle driving signal has been output at the time sequence, the sine wave SW1 (shown with a solid line in FIG. 16) whose actual height of the liquid position 45 changes is almost or completely The sine wave SW2 (shown with a dotted line in FIG. 16) whose height and position at the peripheral end 46 change has no phase difference.

藉此,實現以已排除相位差△P之排除時序將噴嘴驅動訊號57輸出至臂升降馬達122。藉此,能以可使著液位置45追隨配置位置周端46的高度位置變化往復移動之時序輸出噴嘴驅動訊號57。藉此,能與相對於噴嘴驅動訊號57的輸出之處理液噴嘴19的驅動延遲無關地使著液位置45良好地追隨配置位置周端46的高度位置變化。因此,如圖17所示且如外周部處理步驟(步驟S6、步驟S7)所示般,能提升基板W的上表面的外周區域42中的處理寬度的均勻性。 In this way, the nozzle driving signal 57 is output to the arm lift motor 122 at the timing of excluding the phase difference ΔP. Thereby, the nozzle driving signal 57 can be output at a timing that allows the liquid position 45 to follow the change in the height position of the arrangement position peripheral end 46 and reciprocate. Thereby, regardless of the drive delay of the processing liquid nozzle 19 with respect to the output of the nozzle drive signal 57, the liquid position 45 can follow the change of the height position of the peripheral edge 46 of the arrangement position well. Therefore, as shown in FIG. 17 and as shown in the outer peripheral processing steps (steps S6 and S7), the uniformity of the processing width in the outer peripheral area 42 of the upper surface of the substrate W can be improved.

當從開始噴出藥液經過預先設定的期間時(在圖13的步驟S36中為是),控制裝置3係關閉藥液閥25。藉此,停止(結束)從處理液噴嘴19噴出藥液(圖13的步驟S37)。 When a predetermined period of time has elapsed since the discharge of the chemical solution (YES in step S36 of FIG. 13), the control device 3 closes the chemical solution valve 25. This stops (ends) the discharge of the chemical liquid from the processing liquid nozzle 19 (step S37 in FIG. 13).

此外,在外周部藥液處理步驟(步驟S6)中,加熱器11的熱源被開啟,藉由加熱器11加熱基板W的下表面的外周區域43。藉此,提高外周部藥液處理的處理速度。此外,在外周部藥液處理步驟(步驟S6)中,藉由從位於處理位置的氣體噴出噴嘴27噴出惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。藉由該放射狀氣流保護屬於器件形成區域之基板W的上表面中央部。此外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。能藉由該惰性氣體的噴吹控制基板W的上表面的外周區域42中的藥液的處理寬度。此 外,在外周部藥液處理步驟(步驟S6)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴出惰性氣體。能藉由該惰性氣體的噴吹防止藥液繞入至基板W的下表面。 In addition, in the outer peripheral chemical solution processing step (step S6), the heat source of the heater 11 is turned on, and the outer peripheral region 43 of the lower surface of the substrate W is heated by the heater 11. Thereby, the processing speed of the chemical treatment in the outer peripheral portion is increased. In addition, in the outer periphery chemical solution processing step (step S6 ), by injecting an inert gas from the gas ejection nozzle 27 located at the processing position, a radial air flow is formed above the substrate W from the center to the outer periphery 41. The central portion of the upper surface of the substrate W belonging to the device formation area is protected by this radial airflow. In addition, in the outer peripheral portion chemical liquid processing step (step S6 ), the inert gas is blown from the upper outer peripheral portion gas nozzle 31 located at the processing position to the blowing position of the outer peripheral area 42 of the upper surface of the substrate W. The processing width of the chemical solution in the outer peripheral area 42 of the upper surface of the substrate W can be controlled by the blowing of the inert gas. this In addition, in the outer peripheral portion chemical solution processing step (step S6), inert gas is sprayed from the lower outer peripheral portion gas nozzle 36 located at the processing position to the blowing position of the outer peripheral region 43 of the lower surface of the substrate W. The injection of the inert gas can prevent the chemical liquid from getting into the lower surface of the substrate W.

第三惰性氣體供給單元10係包含有:下外周部氣體噴嘴36,係用以將惰性氣體噴出至基板W的下表面的外周區域43;第三氣體配管37,係用以將惰性氣體供給至下外周部氣體噴嘴36;以及第三氣體閥38,係用以開閉第三氣體配管37。當在與基板W的下表面的外周區域43對向的處理位置中開啟第三氣體閥38時,下外周部氣體噴嘴36係朝鉛直上方地將惰性氣體噴出至基板W的下表面的外周區域43的噴吹位置。 The third inert gas supply unit 10 includes: a lower outer peripheral gas nozzle 36 for ejecting inert gas to the outer peripheral region 43 of the lower surface of the substrate W; and a third gas piping 37 for supplying inert gas to The lower outer peripheral gas nozzle 36; and the third gas valve 38 are used to open and close the third gas piping 37. When the third gas valve 38 is opened in the processing position opposed to the outer peripheral area 43 of the lower surface of the substrate W, the lower outer gas nozzle 36 ejects the inert gas to the outer peripheral area of the lower surface of the substrate W vertically upward 43's blowing position.

在外周部藥液處理步驟(步驟S6)結束後,接著,控制裝置3係執行外周部清洗液處理步驟(外周部處理步驟,圖10的步驟S7),該外周部清洗液處理步驟係使用清洗液處理基板W的外周部41。外周部清洗液處理步驟(步驟S7)係在基板W的旋轉處於預定的旋轉速度(約300rpm至約1000rpm的預定的速度)的狀態下執行。此外,控制裝置3係與外周部清洗液處理步驟(步驟S7)並行地執行著液位置往復移動步驟,該著液位置往復移動步驟係使基板W的上表面的外周區域42中的清洗液的著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨配置位置周端46的高度位置變化於高度方向V往復移動。一併參照圖13,說明外周部清洗液處理步驟(步驟S7)。 After the outer peripheral chemical solution processing step (step S6) ends, the control device 3 then executes an outer peripheral cleaning solution processing step (outer peripheral processing step, step S7 in FIG. 10), which uses a cleaning The outer peripheral portion 41 of the liquid processing substrate W. The outer peripheral portion cleaning solution processing step (step S7) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1000 rpm). In addition, the control device 3 executes the reciprocating liquid position step in parallel with the outer peripheral cleaning liquid processing step (step S7), which causes the cleaning liquid in the outer peripheral area 42 of the upper surface of the substrate W The liquid injection position 45 is reciprocated in the height direction V following the change in the height position of the arrangement position peripheral end 46 so that the interval between the liquid injection position 45 and the arrangement position peripheral end 46 is kept constant. Referring to FIG. 13 together, the procedure for processing the cleaning liquid in the outer peripheral portion (step S7) will be described.

在外周部清洗液處理步驟(步驟S7)中,控制裝置3係控制自轉馬達18將基板W的旋轉速度設定成預定的處理旋轉速度(亦即外周部清洗液處理步驟(步驟S7)中的基板W的旋轉速度)(步驟S30)。此外,在處理液噴嘴19位於退避位置之情形中,控制裝置3係控制臂升降馬達122,將處理液噴嘴19配置於與上表面的外周區域42對向之處理位置(步驟S31)。 In the peripheral cleaning solution processing step (step S7), the control device 3 controls the rotation motor 18 to set the rotation speed of the substrate W to a predetermined processing rotation speed (that is, the substrate in the peripheral cleaning solution processing step (step S7)) W rotation speed) (step S30). In addition, when the processing liquid nozzle 19 is located at the retreat position, the control device 3 controls the arm lift motor 122 to arrange the processing liquid nozzle 19 at a processing position opposed to the outer peripheral area 42 of the upper surface (step S31).

當基板W的旋轉達至處理旋轉速度時,控制裝置3係一邊關閉藥液液閥25一邊開啟清洗液閥26B,藉此從處理液噴嘴19的噴出口19a開始噴出清洗液(步驟S32)。此外,控制裝置3係開始執行著液位置往復移動步驟(步驟S33)。由於著液位置往復移動步驟已在外周部藥液處理步驟(步驟S6)中說明完畢,故省略其說明(步驟S33)。當從開始噴出清洗液經過預先設定的期間時(在步驟S36中為是),控制裝置3係關閉清洗液閥26B。藉此,停止(結束)從處理液噴嘴19噴出清洗液(步驟S37)。 When the rotation of the substrate W reaches the processing rotation speed, the control device 3 opens the cleaning liquid valve 26B while closing the chemical liquid valve 25, thereby starting to discharge the cleaning liquid from the discharge port 19a of the processing liquid nozzle 19 (step S32). In addition, the control device 3 starts to execute the reciprocating step of the liquid injection position (step S33). Since the step of reciprocating the liquid injection position has already been described in the chemical liquid processing step (step S6) in the outer peripheral portion, its description is omitted (step S33). When a predetermined period of time has elapsed since the discharge of the cleaning liquid (YES in step S36), the control device 3 closes the cleaning liquid valve 26B. This stops (ends) the discharge of the cleaning liquid from the processing liquid nozzle 19 (step S37).

此外,在外周部清洗液處理步驟(步驟S7)中,藉由從位於處理位置的氣體噴出閥27噴出的惰性氣體,於基板W的上方形成有從中央部朝外周部41流動的放射狀氣流。此外,在外周部清洗液處理步驟(步驟S7)中,從位於處理位置的上外周部氣體噴嘴31對基板W的上表面的外周區域42的噴吹位置噴吹惰性氣體。此外,在外周部清洗液處理步驟(S7)中,從位於處理位置的下外周部氣體噴嘴36對基板W的下表面的外周區域43的噴吹位置噴吹惰性氣體。 在外周部清洗液處理步驟(S7)中,可將加熱器11的熱源開啟且藉由加熱器11加熱基板W的下表面的外周區域43,亦可不加熱基板W的下表面的外周區域43。 In addition, in the outer peripheral portion cleaning liquid processing step (step S7), a radial gas flow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas ejected from the gas ejection valve 27 at the processing position . In addition, in the outer peripheral portion cleaning liquid processing step (step S7 ), the inert gas is blown from the upper outer peripheral portion gas nozzle 31 located at the processing position to the blowing position of the outer peripheral area 42 of the upper surface of the substrate W. In addition, in the outer peripheral portion cleaning liquid processing step (S7), inert gas is sprayed from the lower outer peripheral portion gas nozzle 36 located at the processing position to the blowing position of the outer peripheral region 43 of the lower surface of the substrate W. In the outer peripheral portion cleaning liquid processing step (S7), the heat source of the heater 11 may be turned on and the outer peripheral region 43 of the lower surface of the substrate W may be heated by the heater 11 or the outer peripheral region 43 of the lower surface of the substrate W may not be heated.

之後,控制裝置3係控制臂升降馬達122將處理液噴嘴19返回至自轉夾具5的側方的退避位置。 After that, the control device 3 controls the arm lift motor 122 to return the processing liquid nozzle 19 to the retracted position on the side of the rotation jig 5.

接著,進行使基板W乾燥之旋乾(spin-drying)(圖10的步驟S8)。具體而言,控制裝置3係控制自轉馬達18使基板W加速至比各個處理步驟S2至步驟S8中的旋轉速度還高之乾燥旋轉速度(例如數千rpm),並使基板W以該乾燥旋轉速度旋轉。藉此,大的離心力施加至基板W上的液體,附著於基板W的外周部41的液體係被甩離至基板W的周圍。如此,從基板W的外周部41去除液體而使基板W的外周部41乾燥。 Next, spin-drying to dry the substrate W is performed (step S8 in FIG. 10 ). Specifically, the control device 3 controls the rotation motor 18 to accelerate the substrate W to a drying rotation speed (for example, thousands of rpm) higher than the rotation speed in each processing step S2 to step S8, and rotate the substrate W with the drying Rotate at speed. With this, the liquid applied to the substrate W by a large centrifugal force, and the liquid system adhering to the outer peripheral portion 41 of the substrate W are thrown away around the substrate W. In this way, the liquid is removed from the outer peripheral portion 41 of the substrate W to dry the outer peripheral portion 41 of the substrate W.

當從基板W開始高速旋轉經過預定期間時,控制裝置3係藉由控制自轉馬達18而停止自轉夾具5所為之基板W的旋轉。 When a predetermined period of time has elapsed since the substrate W started to rotate at a high speed, the control device 3 stops the rotation of the substrate W by the rotation jig 5 by controlling the rotation motor 18.

之後,從處理腔室4內搬出基板W(圖10的步驟S9)。具體而言,控制裝置3係使搬運機器人CR的手部進入至處理腔室4的內部。接著,控制裝置3係使搬運機器人CR的手部保持自轉夾具5上的基板W。之後,控制裝置3係使搬運機器人CR的手部從處理腔室4內退避。藉此,從處理腔室4搬出處理後的基板W。 After that, the substrate W is carried out from the processing chamber 4 (step S9 in FIG. 10). Specifically, the control device 3 causes the hand of the transfer robot CR to enter the processing chamber 4. Next, the control device 3 causes the hand of the transfer robot CR to hold the substrate W on the rotation jig 5. After that, the control device 3 retracts the hand of the transport robot CR from the processing chamber 4. With this, the processed substrate W is carried out from the processing chamber 4.

藉此,依據本實施形態,以下述方式驅動處理液噴嘴19:著液位置45係一邊與配置位置周端46之間的間隔保 持一定,一邊追隨配置位置周端46的高度位置變化往復移動。因此,能因應基板W的旋轉所伴隨之配置位置周端46的高度位置變化,使著液位置45以著液位置45與配置位置周端46之間的間隔保持一定之方式追隨。藉此,能不會受到基板W的旋轉所伴隨之配置位置周端46的高度位置變化之影響地高度地保持基板W的外周部41中的處理寬度的均勻性。 Thus, according to the present embodiment, the processing liquid nozzle 19 is driven as follows: the distance between the liquid application position 45 side and the peripheral end 46 of the arrangement position is maintained. Keeping constant, it reciprocates while following the change of the height position of the peripheral end 46 of the arrangement position. Therefore, in response to the change in the height position of the peripheral end 46 of the arrangement position accompanying the rotation of the substrate W, the liquid application position 45 can be followed so that the interval between the liquid application position 45 and the arrangement position peripheral end 46 is kept constant. Thereby, the uniformity of the processing width in the outer peripheral portion 41 of the substrate W can be maintained at a high level without being affected by the change in the height position of the peripheral end 46 of the arrangement position accompanying the rotation of the substrate W.

此外,能一邊使被自轉夾具5保持的基板W繞著旋轉軸線A1轉動,一邊使用高度位置感測器147檢測基板W的周端面44的計測對象位置的高度位置,藉此良好地計測基板W的周方向的各周端位置。亦即,能使用位置感測器(高度位置感測器147)此種簡單的構成良好地計測基板W的周方向的各周端位置。 In addition, while rotating the substrate W held by the rotation jig 5 about the rotation axis A1, the height position sensor 147 can be used to detect the height position of the measurement target position of the peripheral end surface 44 of the substrate W, thereby measuring the substrate W satisfactorily The position of each circumferential end in the circumferential direction. That is, a simple configuration such as a position sensor (height position sensor 147) can be used to measure the circumferential end positions of the substrate W in a good manner.

此外,能使處理液噴嘴19移動並使用編碼器23檢測此時的處理液噴嘴19的移動量,藉此實際地計測相位差△P。由於依據實際測量的相位差△P來移動處理液噴嘴19,藉此能使著液位置45的往復移動更良好地追隨配置位置周端46的位置變化。 In addition, it is possible to move the processing liquid nozzle 19 and use the encoder 23 to detect the amount of movement of the processing liquid nozzle 19 at this time, thereby actually measuring the phase difference ΔP. Since the processing liquid nozzle 19 is moved according to the actually measured phase difference ΔP, the reciprocating movement of the liquid position 45 can follow the position change of the peripheral end 46 of the arrangement position better.

此外,於相位差記憶部55設置有複數個相位差△P,各個相位差△P係與基板W的處理旋轉速度對應地設置有複數個。而且,以已排除與處理旋轉速度對應的相位差△P之排除時序輸出噴嘴驅動訊號57。因此,即使在基板處理裝置1中外周部藥液處理步驟(步驟S6)中的基板W的處理旋轉速度根據配方的內容而不同之情形中,亦能以與各處 理旋轉速度對應之最適當的時序輸出噴嘴驅動訊號。 In addition, a plurality of phase differences ΔP are provided in the phase difference memory unit 55, and each phase difference ΔP is provided in accordance with the processing rotation speed of the substrate W. Then, the nozzle driving signal 57 is output at the timing of excluding the phase difference ΔP corresponding to the processing rotation speed. Therefore, even in the case where the processing rotation speed of the substrate W in the chemical processing step (step S6) in the outer peripheral portion of the substrate processing apparatus 1 differs according to the content of the recipe, The nozzle drive signal is output at the most appropriate timing corresponding to the rotation speed.

以上,雖然已說明本發明的實施形態之一,但本發明亦可以其他的形態來實施。 Although one of the embodiments of the present invention has been described above, the present invention can be implemented in other forms.

例如,如圖7中以虛線所示般,亦可於記憶單元52設置有移動步驟執行旗標56,該移動步驟執行旗標56係用以決定是否在外周部處理步驟(步驟S6、步驟S7)中執行著液位置往復移動步驟(圖13的步驟S33)。於移動步驟執行旗標56選擇性地儲存有與著液位置往復移動步驟的執行對應之預定的值(例如「5A[H]」)以及與著液位置往復移動的非執行對應之預定的值(例如00[H])。而且,亦可作成為在移動步驟執行旗標56儲存有「5A[H]」之情形中控制裝置3係與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟,且在移動步驟執行旗標56儲存有「00[H]」之情形中控制裝置3係不與外周部處理步驟(步驟S6、步驟S7)並行地執行著液位置往復移動步驟。 For example, as shown by the dotted line in FIG. 7, the memory unit 52 may also be provided with a moving step execution flag 56 which is used to determine whether to process the step in the outer periphery (step S6, step S7 ), the liquid position reciprocating step (step S33 in FIG. 13) is executed. The movement step execution flag 56 selectively stores a predetermined value (for example, "5A[H]") corresponding to the execution of the reciprocating movement step of the liquid injection position and a predetermined value corresponding to the non-execution of the reciprocating movement of the liquid injection position (Eg 00[H]). Moreover, when the moving step execution flag 56 stores "5A[H]", the control device 3 may perform the reciprocating liquid position moving step in parallel with the outer peripheral processing steps (step S6, step S7). And in the case where the movement step execution flag 56 stores "00[H]", the control device 3 does not perform the reciprocating movement step of the liquid position in parallel with the outer peripheral processing steps (step S6, step S7).

此外,雖然已說明在相位差計測步驟(步驟S5)中求出記憶於相位差記憶部55之複數個相位差△P的全部,但亦可在相位差計測步驟(步驟S5)中僅求出與至少一個處理旋轉速度對應的相位差△P,並藉由基於該相位差△P之運算求出與其他的處理旋轉速度對應之相位差△P。 In addition, although it has been described that all of the plurality of phase differences ΔP memorized in the phase difference storage unit 55 are obtained in the phase difference measurement step (step S5), only the phase difference measurement step (step S5) may be obtained The phase difference ΔP corresponding to at least one processing rotation speed, and the phase difference ΔP corresponding to the other processing rotation speed is obtained by calculation based on the phase difference ΔP.

此外,雖然已說明使用相位差△P的實測值求出排除時序,但是記憶於相位差記憶部55的相位差△P亦可非為實測值而是預先設定的規定值。在此情形中,亦能從圖10所示的基板處理例省略相位差計測步驟(步驟S5)。 In addition, although it has been described that the actual measurement value of the phase difference ΔP is used to obtain the exclusion sequence, the phase difference ΔP stored in the phase difference storage unit 55 may not be the actual measurement value but a predetermined value set in advance. In this case, the phase difference measurement step (step S5) can also be omitted from the substrate processing example shown in FIG.

此外,亦可在著液位置往復移動步驟(步驟S33)中不以排除時序而是以前述最佳時序對臂升降馬達122輸出噴嘴驅動訊號57。在此情形中,亦可與著液位置往復移動步驟(步驟S33)並行地執行各周端高度位置計測步驟(步驟S4)。在此情形中,亦可依據各周端高度位置計測步驟(步驟S4)的計測結果反饋(feedback)控制著液位置45的往復移動。 In addition, the nozzle driving signal 57 may be output to the arm lift motor 122 at the optimal timing described above in the reciprocating step of the liquid injection position (step S33). In this case, the step of measuring the height position of each peripheral end (step S4) may be executed in parallel with the reciprocating step of the liquid injection position (step S33). In this case, the reciprocating movement of the liquid position 45 can also be controlled based on the feedback of the measurement result of each peripheral end height position measurement step (step S4).

此外,雖然在著液位置往復移動步驟(步驟S33)中使用用以使處理液噴嘴19於高度方向V往復移動之手法作為用以使著液位置45於高度方向V往復移動之手法,但亦可採用用以使處理液噴嘴19於徑方向RD往復移動之手法來取代。在此情形中,能使用臂搖動馬達22作為電動馬達。在此情形中,當於臂搖動馬達22結合有用以檢測臂搖動馬達22的輸出軸22a的旋轉角度之編碼器且臂搖動馬達22使輸出軸22a旋轉時,處理液噴嘴19係以已因應了輸出軸22a的旋轉角度之移動量繞著臂支撐軸21的中心軸線轉動。亦即,當處理液噴嘴19繞著臂支撐軸21的中心軸線轉動時,使臂搖動馬達22的輸出軸22a以與處理液噴嘴19的移動量相當之旋轉角度旋轉。因此,藉由編碼器檢測輸出軸22a的旋轉角度,能檢測處理液噴嘴19的位置。 In addition, although the method for reciprocating the processing liquid nozzle 19 in the height direction V is used as the method for reciprocating the liquid injection position 45 in the height direction V in the step of reciprocating the liquid injection position (step S33), A method for reciprocating the processing liquid nozzle 19 in the radial direction RD may be used instead. In this case, the arm swing motor 22 can be used as an electric motor. In this case, when an encoder for detecting the rotation angle of the output shaft 22a of the arm rocking motor 22 is combined with the arm rocking motor 22 and the arm rocking motor 22 rotates the output shaft 22a, the processing liquid nozzle 19 has already responded The amount of movement of the rotation angle of the output shaft 22a rotates around the central axis of the arm support shaft 21. That is, when the processing liquid nozzle 19 rotates around the central axis of the arm support shaft 21, the output shaft 22a of the arm swing motor 22 is rotated at a rotation angle corresponding to the movement amount of the processing liquid nozzle 19. Therefore, by detecting the rotation angle of the output shaft 22a by the encoder, the position of the processing liquid nozzle 19 can be detected.

而且,在外周部處理步驟(步驟S6、步驟S7)中,控制裝置3係使處理液噴嘴19追隨該配置位置周端46的高度位置變化(以下稱為「高度位置變化」)而徑方向RD往復移動。藉此,在外周部處理步驟(步驟S6、步驟S7)中能將基板W的上表面的外周區域42(參照圖3)中的著液位置45與 配置位置周端46之間的間隔保持一定。 Further, in the outer peripheral processing steps (steps S6 and S7), the control device 3 causes the processing liquid nozzle 19 to follow the height position change of the arrangement position peripheral end 46 (hereinafter referred to as "height position change") in the radial direction RD Move back and forth. Thereby, in the outer peripheral processing steps (steps S6 and S7), the liquid injection position 45 in the outer peripheral area 42 (see FIG. 3) of the upper surface of the substrate W can be The interval between the peripheral ends 46 of the arrangement position is kept constant.

此外,作為用以使著液位置45往復移動之手法,除了上述手法之外,亦能藉由組合高度方向V的往復移動與徑方向RD的往復移動或者改變處理液噴嘴19的噴出方向而使著液位置45於徑方向RD往復移動。 In addition, as a method for reciprocating the liquid application position 45, in addition to the above-mentioned method, it is also possible to combine the reciprocating motion in the height direction V and the reciprocating motion in the radial direction RD or change the discharge direction of the processing liquid nozzle 19 The liquid injection position 45 reciprocates in the radial direction RD.

此外,雖然已說明在各周端高度方向計測步驟(步驟S4)中使用高度位置感測器計測基板W的外周部41的高度位置並使用高度位置感測器計測基板W的周端面44的位置,但亦可使用高度位置感測器計測基板W的上表面的外周區域42,亦可使用高度位置感測器計測基板W的下表面的外周區域43。 In addition, although it has been described that the height position sensor is used to measure the height position of the outer peripheral portion 41 of the substrate W in each peripheral end height direction measurement step (step S4), and the position of the peripheral end surface 44 of the substrate W is measured using the height position sensor However, the outer peripheral area 42 of the upper surface of the substrate W may be measured using a height position sensor, or the outer peripheral area 43 of the lower surface of the substrate W may be measured using a height position sensor.

此外,雖然採用位置感測器(高度位置感測器147)作為各周端位置計測單元,但亦可採用CCD攝像機作為周端位置計測單元。 In addition, although a position sensor (height position sensor 147) is used as each peripheral end position measuring unit, a CCD camera may also be used as the peripheral end position measuring unit.

此外,作為噴嘴移動單元,雖然例舉用以使處理液噴嘴19一邊描繪圓弧軌跡一邊移動之掃描形式的噴嘴移動單元,但亦可採用用以使處理液噴嘴19直線狀地移動之直線移動形式的噴嘴移動單元。 In addition, as the nozzle moving unit, although a scanning type nozzle moving unit for moving the processing liquid nozzle 19 while drawing an arc trajectory is exemplified, a linear movement for linearly moving the processing liquid nozzle 19 may be used. Nozzle moving unit.

此外,雖然已舉例說明處理液噴嘴19為用以噴出藥液以及清洗液兩者之處理液噴嘴,但亦可個別地設置有用以噴出藥液之處理液噴嘴(藥液噴嘴)以及用以噴出清洗液之處理液噴嘴(清洗液噴嘴)。 In addition, although it has been exemplified that the processing liquid nozzle 19 is a processing liquid nozzle for ejecting both the chemical liquid and the cleaning liquid, it is also possible to separately provide a processing liquid nozzle (chemical liquid nozzle) for ejecting the chemical liquid and for ejecting Cleaning fluid nozzle (cleaning fluid nozzle).

此外,在前述各實施形態中,雖然已說明基板處理裝置為用以處理圓板狀的基板W之裝置,但只要基板W的 周端的至少一部分作成圓弧狀,則不一定需要為真圓。 In addition, in the foregoing embodiments, although the substrate processing apparatus has been described as an apparatus for processing the disk-shaped substrate W, as long as the substrate W At least a part of the peripheral end is formed into an arc shape, and it does not necessarily need to be a true circle.

本發明係與2017年2月28日於日本特許廳提出的日本特願2017-37562號對應,並將日本特願2017-37562號的所有內容援用於此。 The present invention corresponds to Japanese Patent Application No. 2017-37562 proposed by the Japan Patent Office on February 28, 2017, and all contents of Japanese Patent Application No. 2017-37562 are applied here.

2‧‧‧處理單元 2‧‧‧Processing unit

4‧‧‧處理腔室 4‧‧‧Process chamber

5‧‧‧自轉夾具 5‧‧‧Rotating fixture

6‧‧‧處理液供給單元 6‧‧‧Process liquid supply unit

8‧‧‧第一惰性氣體供給單元 8‧‧‧First inert gas supply unit

9‧‧‧第二惰性氣體供給單元 9‧‧‧Second inert gas supply unit

10‧‧‧第三惰性氣體供給單元 10‧‧‧The third inert gas supply unit

11‧‧‧加熱器 11‧‧‧heater

12‧‧‧處理罩 12‧‧‧Processing hood

12a‧‧‧上端部 12a‧‧‧Upper end

13‧‧‧隔壁 13‧‧‧ next door

14‧‧‧FFU 14‧‧‧FFU

15‧‧‧排氣導管 15‧‧‧Exhaust duct

16‧‧‧自轉軸 16‧‧‧spindle

17‧‧‧自轉基座 17‧‧‧rotation base

17a‧‧‧上表面 17a‧‧‧upper surface

18‧‧‧自轉馬達 18‧‧‧rotation motor

19‧‧‧處理液噴嘴 19‧‧‧treatment liquid nozzle

20‧‧‧噴嘴臂 20‧‧‧ nozzle arm

21‧‧‧臂支撐軸 21‧‧‧arm support shaft

22‧‧‧臂搖動馬達 22‧‧‧arm rocking motor

23‧‧‧編碼器 23‧‧‧Encoder

24‧‧‧藥液配管 24‧‧‧ liquid medicine piping

25‧‧‧藥液閥 25‧‧‧Medicine valve

26A‧‧‧清洗液配管 26A‧‧‧Cleaning liquid piping

26B‧‧‧清洗液閥 26B‧‧‧Cleaning liquid valve

27‧‧‧氣體噴出噴嘴 27‧‧‧ gas spray nozzle

28‧‧‧第一氣體配管 28‧‧‧First gas piping

29‧‧‧第一氣體閥 29‧‧‧ First gas valve

30‧‧‧第一噴嘴移動機構 30‧‧‧ First nozzle moving mechanism

31‧‧‧上外周部氣體噴嘴 31‧‧‧Upper peripheral gas nozzle

32‧‧‧第二氣體配管 32‧‧‧Second gas piping

33‧‧‧第二氣體閥 33‧‧‧Second gas valve

34‧‧‧第二噴嘴移動機構 34‧‧‧Second nozzle moving mechanism

36‧‧‧下外周部氣體噴嘴 36‧‧‧Lower outer gas nozzle

37‧‧‧第三氣體配管 37‧‧‧Third gas piping

38‧‧‧第三氣體閥 38‧‧‧The third gas valve

122‧‧‧臂升降馬達 122‧‧‧arm lift motor

122a‧‧‧輸出軸 122a‧‧‧ output shaft

147‧‧‧高度位置感測器 147‧‧‧ Height position sensor

A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis

A2‧‧‧搖動軸線 A2‧‧‧Shake axis

V‧‧‧高度方向 V‧‧‧ Height direction

W‧‧‧基板 W‧‧‧Substrate

Claims (19)

一種基板處理裝置,係包含有:基板保持單元,係保持周端的至少一部分作成圓弧狀的基板,且支撐前述基板的中央部並保持前述基板;基板旋轉單元,係使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉;各周端高度位置計測單元,係用以計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;處理液噴嘴,係朝被前述基板保持單元保持的基板的外周部噴出處理液;處理液供給單元,係對前述處理液噴嘴供給處理液;噴嘴驅動單元,係以前述基板中之處理液的著液位置移動之方式驅動前述處理液噴嘴;以及控制裝置,係控制前述基板旋轉單元、前述處理液供給單元、前述各周端高度位置計測單元以及前述噴嘴驅動單元;前述控制裝置係執行:各周端高度位置計測步驟,係藉由前述各周端高度位置計測單元計測前述各周端高度位置;外周部處理步驟,係一邊使前述基板繞著前述旋轉軸線旋轉,一邊從前述處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及 著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 A substrate processing apparatus includes: a substrate holding unit that holds a substrate having at least a part of a peripheral end in an arc shape, and supports a central portion of the substrate to hold the substrate; and a substrate rotating unit that is held by the substrate holding unit The substrate rotates around the axis of rotation passing through the central portion of the substrate; each peripheral end height position measuring unit is used to measure each of the peripheral end positions in the circumferential direction of the substrate held by the substrate holding unit in the circumferential direction Peripheral height position; processing liquid nozzle, which discharges the processing liquid toward the outer periphery of the substrate held by the substrate holding unit; processing liquid supply unit, which supplies the processing liquid to the processing liquid nozzle; nozzle drive unit, which uses the substrate The processing liquid injection position drives the processing liquid nozzle; and the control device controls the substrate rotation unit, the processing liquid supply unit, the peripheral end height position measurement unit and the nozzle driving unit; the control device It is executed: each peripheral end height position measuring step is to measure the peripheral end height position by the peripheral end height position measuring unit; the outer peripheral portion processing step is to rotate the substrate around the rotation axis while rotating the substrate The processing liquid nozzle ejects the processing liquid toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and The reciprocating step of the liquid injection position is parallel to the processing step of the outer peripheral portion, and drives the processing liquid nozzle in the following manner: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate is on the side of the substrate The arrangement position of the circumferential ends of the circumferential ends of the processing liquid nozzles in the circumferential end of the arrangement is kept constant, while reciprocatingly following the change in the height position of the circumferential ends of the arrangement positions. 如請求項1所記載之基板處理裝置,其中前述控制裝置係於前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 The substrate processing apparatus according to claim 1, wherein the control device executes the reciprocating step of the liquid injection position after the step of measuring the height of each peripheral end. 如請求項2所記載之基板處理裝置,其中前述噴嘴驅動單元係包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴;前述控制裝置係執行:噴嘴驅動訊號作成步驟,在前述著液位置往復移動步驟中,前述控制裝置係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排 除時序係已將相對於前述噴嘴驅動訊號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 The substrate processing apparatus according to claim 2, wherein the nozzle driving unit includes the following unit: a nozzle driving signal for driving the processing liquid nozzle is input to thereby drive the processing liquid nozzle; the control device executes : A nozzle driving signal preparation step, in the reciprocating step of the liquid injection position, the control device is based on the measurement result in the measurement step of each peripheral end height position and the rotation speed of the substrate in the outer peripheral part processing step. The liquid injection position will be made with the same amplitude and the same periodic movement as the height position change at the peripheral end of the aforementioned arrangement position, and the nozzle drive signal for driving the treatment liquid nozzle; and the drive signal output step is to eliminate all The created nozzle driving signal is output to the nozzle driving unit, and the row Except for the timing sequence, the phase difference of the liquid injection position due to the change in the height position relative to the peripheral end of the arrangement position accompanying the driving delay of the treatment liquid nozzle with respect to the output of the nozzle drive signal has been eliminated. 如請求項3所記載之基板處理裝置,其中前述控制裝置係在前述驅動訊號輸出步驟中執行時序取得步驟,前述時序取得步驟係從前述處理液噴嘴追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 The substrate processing apparatus according to claim 3, wherein the control device executes a timing acquisition step in the drive signal output step, and the timing acquisition step is the most appropriate to follow the height position change of the arrangement position peripheral end from the processing liquid nozzle The chase of the time is staggered to the time corresponding to the aforementioned phase difference, thereby obtaining the aforementioned timing of elimination. 如請求項1至4中任一項所記載之基板處理裝置,其中前述噴嘴驅動單元係包含有:噴嘴移動單元,係使前述處理液噴嘴朝鉛直方向移動;前述控制裝置係在前述著液位置往復移動步驟中執行下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the nozzle driving unit includes: a nozzle moving unit that moves the processing liquid nozzle in a vertical direction; and the control device is at the liquid application position In the reciprocating step, the following step is performed: the processing liquid nozzle is moved in the vertical direction following the change in the height position of the peripheral end of the arrangement position. 如請求項1至4中任一項所記載之基板處理裝置,其中前述噴嘴驅動單元係包含有:噴嘴移動單元,係使前述處理液噴嘴沿著被前述基板保持單元保持的基板的主面移動;前述控制裝置係在前述著液位置往復移動步驟中執行下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定 之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the nozzle driving unit includes a nozzle moving unit that moves the processing liquid nozzle along the main surface of the substrate held by the substrate holding unit The control device performs the following steps in the reciprocating step of the liquid injection position: to maintain a constant interval between the liquid injection position of the treatment liquid from the treatment liquid nozzle and the peripheral end of the arrangement position In this manner, the processing liquid nozzle is moved in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position. 如請求項1至4中任一項所記載之基板處理裝置,其中前述控制裝置係在前述著液位置往復移動步驟中執行使前述處理液噴嘴移動之步驟;前述基板處理裝置係進一步包含有:噴嘴移動量檢測單元,係用以檢測前述處理液噴嘴的移動量;前述控制裝置係在前述著液位置往復移動步驟之前進一步執行:相位差計測步驟,係對前述噴嘴移動單元輸出前述噴嘴驅動訊號並使前述處理液噴嘴移動,並藉由前述噴嘴移動量檢測單元檢測此時的前述處理液噴嘴的移動量,藉此計測前述相位差;前述控制裝置係在前述時序取得步驟中執行下述步驟:依據前述相位差計測步驟所計測的相位差取得前述排除時序。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the control device executes a step of moving the processing liquid nozzle in the reciprocating step of the liquid application position; the substrate processing device further includes: The nozzle movement amount detection unit is used to detect the movement amount of the treatment liquid nozzle; the control device is further executed before the reciprocating movement step of the liquid injection position: a phase difference measurement step is to output the nozzle driving signal to the nozzle movement unit Moving the processing liquid nozzle, and detecting the moving amount of the processing liquid nozzle at this time by the nozzle moving amount detection unit, thereby measuring the phase difference; the control device performs the following steps in the timing acquisition step : Obtain the exclusion sequence based on the phase difference measured in the phase difference measurement step. 如請求項7所記載之基板處理裝置,其中前述噴嘴移動單元係包含有電動馬達;前述移動量檢測單元係包含有設置於前述電動馬達的編碼器。 The substrate processing apparatus according to claim 7, wherein the nozzle movement unit includes an electric motor; and the movement amount detection unit includes an encoder provided in the electric motor. 如請求項1至4中任一項所記載之基板處理裝置,其中前述各周端高度位置計測單元係包含有位置感測器以及電荷耦合元件攝像機中的至少一者,前述位置感測器係用以檢測前述基板的周端高度位置中之周方向 的預定的周端高度位置,前述電荷耦合元件攝像機係用以拍攝前述基板的至少外周部。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the peripheral height position measurement unit includes at least one of a position sensor and a charge-coupled element camera, and the position sensor is Used to detect the circumferential direction in the height position of the peripheral end of the aforementioned substrate At a predetermined peripheral height position, the charge-coupled element camera is used to photograph at least the outer peripheral portion of the substrate. 如請求項1至4中任一項所記載之基板處理裝置,其中前述各周端高度位置計測單元係包含有:位置感測器,係用以檢測前述基板的周端高度位置中之周方向的預定的周端高度位置;前述控制裝置係在前述各周端高度位置計測步驟中執行下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用前述位置感測器計測前述預定的周端高度位置。 The substrate processing apparatus according to any one of claims 1 to 4, wherein each of the peripheral end height position measuring units includes: a position sensor for detecting the circumferential direction of the peripheral end height position of the substrate The predetermined peripheral height position of the above; the control device performs the following steps in the measuring steps of each peripheral end height position: using the position sensing while rotating the substrate held by the substrate holding unit about the rotation axis The instrument measures the aforementioned predetermined circumferential height position. 如請求項1至4中任一項所記載之基板處理裝置,其中前述處理液噴嘴係朝基板的外側及斜下方噴出處理液。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing liquid nozzle discharges the processing liquid toward the outside of the substrate and diagonally downward. 一種基板處理方法,係包含有:基板保持步驟,係藉由用以支撐基板的中央部並保持前述基板之基板保持單元,保持周端的至少一部分作成圓弧狀的基板;各周端高度位置計測步驟,係計測被前述基板保持單元保持的基板的周方向的各周端位置中之屬於高度位置的各周端高度位置;外周部處理步驟,係一邊使被前述基板保持單元保持的基板繞著通過前述基板的中央部之旋轉軸線旋轉,一邊從處理液噴嘴朝前述基板的外周部噴出處理液,藉此處理前述基板的外周部;以及 著液位置往復移動步驟,係與前述外周部處理步驟並行,並以下述方式藉由噴嘴驅動單元驅動前述處理液噴嘴:前述基板的外周部中之來自前述處理液噴嘴的處理液之著液位置係一邊與前述基板的周端中之配置有前述處理液噴嘴之屬於周方向位置的周端之配置位置周端之間的間隔保持一定,一邊追隨前述配置位置周端的高度位置變化而往復移動。 A substrate processing method includes: a substrate holding step, wherein a substrate holding unit for supporting the central portion of the substrate and holding the substrate, holding at least a part of the peripheral end of the substrate into an arc shape; measuring the height position of each peripheral end The step is to measure the height position of each peripheral end belonging to the height position among the peripheral end positions of the substrate held by the substrate holding unit in the circumferential direction; the outer peripheral portion processing step is to wrap the substrate held by the substrate holding unit around By rotating the rotation axis of the central portion of the substrate, the processing liquid is ejected from the processing liquid nozzle toward the outer peripheral portion of the substrate, thereby processing the outer peripheral portion of the substrate; and The reciprocating step of the liquid injection position is parallel to the processing step of the outer peripheral portion, and the processing liquid nozzle is driven by the nozzle driving unit in the following manner: the liquid injection position of the processing liquid from the processing liquid nozzle in the outer peripheral portion of the substrate The distance between the peripheral end of the peripheral end of the peripheral position of the processing liquid nozzle and the peripheral end of the peripheral end of the substrate at the peripheral end of the substrate is kept constant, while reciprocating following the change in the height position of the peripheral end of the disposed position. 如請求項12所記載之基板處理方法,其中前述著液位置往復移動步驟係包含有下述步驟:使前述處理液噴嘴追隨前述配置位置周端的高度位置變化於鉛直方向移動。 The substrate processing method according to claim 12, wherein the reciprocating step of the liquid application position includes a step of moving the processing liquid nozzle in a vertical direction following a change in height position of the peripheral end of the arrangement position. 如請求項12所記載之基板處理方法,其中前述著液位置往復移動步驟係包含有下述步驟:以將來自前述處理液噴嘴的處理液的著液位置與前述配置位置周端之間的間隔保持一定之方式,使前述處理液噴嘴追隨前述配置位置周端的高度位置變化朝前述基板的旋轉半徑方向移動。 The substrate processing method according to claim 12, wherein the reciprocating step of the liquid injection position includes the step of: separating the liquid injection position of the processing liquid from the processing liquid nozzle and the peripheral end of the arrangement position In a fixed manner, the processing liquid nozzle is moved in the direction of the radius of rotation of the substrate following the change in height position at the peripheral end of the arrangement position. 如請求項12至14中任一項所記載之基板處理方法,其中在前述各周端高度位置計測步驟之後執行前述著液位置往復移動步驟。 The substrate processing method according to any one of claims 12 to 14, wherein the reciprocating movement step of the liquid injection position is performed after the step of measuring the height of each peripheral end. 如請求項12至14中任一項所記載之基板處理方法,其中前述噴嘴驅動單元係包含有下述單元:被輸入有用以驅動前述處理液噴嘴之噴嘴驅動訊號,藉此驅動前述處理液噴嘴; 前述著液位置往復移動步驟係包含有:噴嘴驅動訊號作成步驟,係依據前述各周端高度位置計測步驟中的計測結果以及前述外周部處理步驟中的前述基板的旋轉速度,以前述著液位置會以與前述配置位置周端的高度位置變化相同的振幅以及相同的周期移動之方式作成用以使前述處理液噴嘴驅動之噴嘴驅動訊號;以及驅動訊號輸出步驟,係在排除時序將所作成的前述噴嘴驅動訊號輸出至前述噴嘴驅動單元,前述排除時序係已將相對於前述噴嘴驅動訊號的輸出之前述處理液噴嘴的驅動延遲所伴隨之相對於前述配置位置周端的高度位置變化之前述著液位置的相位差予以排除。 The substrate processing method according to any one of claims 12 to 14, wherein the nozzle driving unit includes a unit in which a nozzle driving signal for driving the processing liquid nozzle is input to thereby drive the processing liquid nozzle ; The reciprocating step of the liquid injection position includes: a nozzle driving signal preparation step, which is based on the measurement result in the circumferential end height position measurement step and the rotation speed of the substrate in the outer peripheral portion processing step, with the liquid injection position The nozzle driving signal for driving the processing liquid nozzle will be made with the same amplitude and the same periodic movement as the change in height position at the peripheral end of the aforementioned arrangement position; and the output step of the driving signal is based on the above The nozzle driving signal is output to the nozzle driving unit, and the exclusion timing is the liquid injection position where the height position relative to the peripheral end of the arrangement position changes with the driving delay of the processing liquid nozzle relative to the output of the nozzle driving signal. The phase difference is eliminated. 如請求項16所記載之基板處理方法,其中前述驅動訊號輸出步驟係包含有:時序取得步驟,係從前述著液位置追隨前述配置位置周端的高度位置變化之最適當的追隨時序錯開達至相當於前述相位差之時間,藉此取得前述排除時序。 The substrate processing method as recited in claim 16, wherein the driving signal output step includes: a timing acquisition step, which is the most suitable chase from the liquid injection position to the height position change at the peripheral end of the arrangement position, and the sequence is staggered to a considerable amount At the time of the aforementioned phase difference, the aforementioned timing of elimination is thereby obtained. 如請求項17所記載之基板處理方法,其中進一步包含有:相位差計測步驟,係在前述著液位置往復移動步驟之前對前述噴嘴驅動單元輸出前述噴嘴驅動訊號並使前述著液位置移動,藉此計測前述相位差;前述時序取得步驟係包含有下述步驟:依據前述相位差取得前述排除時序。 The substrate processing method according to claim 17, further comprising: a phase difference measurement step, which is to output the nozzle driving signal to the nozzle drive unit before the reciprocating step of the liquid injection position and move the liquid injection position by This measures the phase difference; the timing obtaining step includes the following steps: obtaining the excluded timing based on the phase difference. 如請求項12至14中任一項所記載之基板處理方法,其中前述各周端高度位置計測步驟係進一步包含有下述步驟:一邊使被前述基板保持單元保持的基板繞著前述旋轉軸線轉動,一邊使用位置感測器計測預定的周端高度位置。 The substrate processing method according to any one of claims 12 to 14, wherein the step of measuring the peripheral end height position further includes the step of rotating the substrate held by the substrate holding unit about the rotation axis , While using a position sensor to measure a predetermined circumferential height position.
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Publication number Priority date Publication date Assignee Title
JP7145019B2 (en) * 2018-09-19 2022-09-30 株式会社Screenホールディングス Recipe conversion method, recipe conversion program, recipe conversion apparatus, and substrate processing system
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DE102023205623A1 (en) * 2023-06-15 2024-12-19 Carl Zeiss Smt Gmbh Method, device and computer program for determining an orientation of a sample on a sample table

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100101497A1 (en) * 2008-10-29 2010-04-29 Takashi Izuta Substrate treatment apparatus
TW201513206A (en) * 2013-09-27 2015-04-01 Screen Holdings Co Ltd Substrate processing apparatus and substrate processing method
US20150162224A1 (en) * 2013-12-11 2015-06-11 SCREEN Holdings Co., Ltd. Substrate treatment method and substrate treatment apparatus
TW201535490A (en) * 2013-12-03 2015-09-16 Screen Holdings Co Ltd Substrate processing apparatus and substrate processing method
TW201604933A (en) * 2014-05-01 2016-02-01 Tokyo Electron Ltd Substrate-processing device, substrate-processing method, and computer-readable recording medium on which substrate-processing program has been recorded
US20160071746A1 (en) * 2013-03-29 2016-03-10 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110712A (en) * 1999-10-12 2001-04-20 Tokyo Electron Ltd Equipment and method for eliminating coating film
JP2004179211A (en) * 2002-11-25 2004-06-24 Nec Kansai Ltd Edge rinse mechanism of resist coating device
JP2004241492A (en) * 2003-02-04 2004-08-26 Dainippon Screen Mfg Co Ltd Substrate processing equipment
JP2005217282A (en) * 2004-01-30 2005-08-11 Tokyo Electron Ltd Method and apparatus for forming coating film
KR20070074270A (en) * 2006-01-09 2007-07-12 주식회사 탑 엔지니어링 Dispense head of paste applicator
JP5090089B2 (en) * 2006-10-19 2012-12-05 大日本スクリーン製造株式会社 Substrate processing equipment
JP5449239B2 (en) 2010-05-12 2014-03-19 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium storing program
JP6183705B2 (en) * 2013-01-15 2017-08-23 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus
JP6242056B2 (en) * 2013-02-15 2017-12-06 株式会社Screenホールディングス Substrate processing equipment
JP6112509B2 (en) * 2013-03-15 2017-04-12 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
US20140261572A1 (en) * 2013-03-15 2014-09-18 Dainippon Screen Mfg.Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP6211910B2 (en) * 2013-12-03 2017-10-11 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
KR102342131B1 (en) * 2014-08-15 2021-12-21 가부시키가이샤 스크린 홀딩스 Substrate treatment apparatus, and substrate treatment method
JP6389089B2 (en) * 2014-09-18 2018-09-12 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP6475487B2 (en) * 2014-12-15 2019-02-27 株式会社Screenセミコンダクターソリューションズ Development method
TWI667686B (en) * 2015-01-23 2019-08-01 日本思可林集團股份有限公司 Substrate processing method, substrate processing apparatus, and fluid nozzle
JP6352824B2 (en) * 2015-01-23 2018-07-04 東芝メモリ株式会社 Substrate processing apparatus, control program, and control method
JP6475071B2 (en) * 2015-04-24 2019-02-27 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100101497A1 (en) * 2008-10-29 2010-04-29 Takashi Izuta Substrate treatment apparatus
US20160071746A1 (en) * 2013-03-29 2016-03-10 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
TW201513206A (en) * 2013-09-27 2015-04-01 Screen Holdings Co Ltd Substrate processing apparatus and substrate processing method
TW201535490A (en) * 2013-12-03 2015-09-16 Screen Holdings Co Ltd Substrate processing apparatus and substrate processing method
US20150162224A1 (en) * 2013-12-11 2015-06-11 SCREEN Holdings Co., Ltd. Substrate treatment method and substrate treatment apparatus
TW201604933A (en) * 2014-05-01 2016-02-01 Tokyo Electron Ltd Substrate-processing device, substrate-processing method, and computer-readable recording medium on which substrate-processing program has been recorded

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