TWI673786B - Chemical mechanical polishing apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

Some embodiments of the present invention provide a chemical mechanical polishing apparatus, including: a platform; a polishing pad provided on the platform; and a polishing head assembly for carrying a wafer, wherein the polishing head assembly includes: a base; , Located on the base, where the wafer attaching film has upper and lower sides opposite to each other, wherein the upper side is toward the base, and the lower side is for attaching the wafer, and has a main surface and an autonomous surface protruding Multiple convex structures.

Description

   Chemical mechanical polishing equipment and method for manufacturing semiconductor device   

Some embodiments of the present invention relate to a chemical mechanical polishing device and a manufacturing method using the chemical mechanical polishing device, and more particularly to a chemical mechanical polishing device having a wafer attachment film and manufacturing using the chemical mechanical polishing device. method.

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Advances in integrated circuit materials and design technology have led to the generation of integrated circuit generations. Each generation of circuits is smaller and more complex than the previous generation. However, these technological advances have increased the complexity of the process and manufacturing of integrated circuits.

In the development of integrated circuits, functional density (ie, the number of devices connected per chip area) is generally increased, and geometric size (ie, the smallest component or circuit that can be manufactured in the process) is reduced. The benefits of downsizing often include increased productivity and associated costs.

In recent decades, a chemical mechanical polishing (CMP) process has been used to planarize the films that make up the integrated circuit to provide more accurate structural elements on the integrated circuit. The chemical mechanical polishing process is a planarization process combining chemical removal and mechanical polishing. Chemical mechanical polishing can achieve comprehensive planarization of the entire wafer surface. The CMP process grinds and removes materials from the wafer, and the CMP process can be applied to the surface of multiple materials. Since the CMP process is one of the important processes for forming integrated circuits, there is a need to further increase the reliability and yield of the CMP process.

Some embodiments of the present invention provide a chemical mechanical polishing device, including: a platform; a polishing pad provided on the platform; and a polishing head assembly for carrying a wafer, wherein the polishing head assembly includes a base and a wafer attaching film , Located on the base, where the wafer attaching film has upper and lower sides opposite to each other, wherein the upper side is toward the base, and the lower side is for attaching the wafer, and has a main surface and an autonomous surface protruding Multiple convex structures.

Some embodiments of the present invention further provide a method for manufacturing a semiconductor device, including: providing a wafer, wherein the wafer has a first surface and a second surface opposite to each other; and placing the wafer on a polishing head of a chemical mechanical polishing device On the component, the polishing head component includes a base portion and a wafer attaching film provided on the base portion, wherein the first surface of the wafer is attached to the lower side of the wafer attaching film; and the second surface of the wafer is contacted A polishing pad of a chemical mechanical polishing device; and rotating the wafer to polish the second surface of the wafer, wherein during the polishing step, the first surface of the wafer and the lower side of the wafer attaching film are parallel to the lower side. The adsorption force in the direction is larger than the adsorption force in the direction perpendicular to the lower side.

100‧‧‧ chemical mechanical grinding equipment

102‧‧‧platform

104‧‧‧ Abrasive pad

106‧‧‧Rotating element

108‧‧‧rotation axis

110‧‧‧Grinding head assembly

112‧‧‧arm

114‧‧‧Rotating elements

116‧‧‧Base

118‧‧‧rotation axis

120‧‧‧ Wafer Adhesive Film

122‧‧‧upside

124‧‧‧ underside

126‧‧‧ wings

128‧‧‧ annular peripheral sidewall structure

129‧‧‧Mask

130‧‧‧ Cover

132‧‧‧Side Structure

134‧‧‧Retaining ring

136‧‧‧The first liquid storage tank

138‧‧‧ pipeline

140‧‧‧Nozzle

142‧‧‧Second liquid storage tank

144‧‧‧pipeline

146‧‧‧Nozzle

148‧‧‧Main surface

150‧‧‧ convex structure

152‧‧‧connection point

154‧‧‧Vertex

156‧‧‧First line segment

158‧‧‧Second line segment

160‧‧‧ the first columnar part

162‧‧‧Second columnar section

170‧‧‧First pressure control unit

172‧‧‧ Pipeline

174‧‧‧Second pressure control unit

176‧‧‧ Pipeline

300‧‧‧ Carrier Board

302‧‧‧Photoresistive layer

304‧‧‧Molding material

306‧‧‧Photoresistive layer

308‧‧‧Molding material

310‧‧‧ opening

312‧‧‧ Wafer attaching material layer

314‧‧‧Surface treatment layer

400‧‧‧Molding material board

402‧‧‧Probe

404‧‧‧ opening

406‧‧‧ Wafer attaching material layer

500‧‧‧ wafer

502‧‧‧first surface

504‧‧‧Second Surface

506‧‧‧Loading equipment

508‧‧‧shell

510‧‧‧wafer stage

512‧‧‧axis

530‧‧‧line segment

800‧‧‧ chamber

802‧‧‧ chamber

804‧‧‧line segment

806‧‧‧ grinding slurry

900‧‧‧ line segment

D‧‧‧ diameter

R1‧‧‧arrow

R2‧‧‧arrow

R3‧‧‧arrow

R4‧‧‧ Arrow

R5‧‧‧arrow

θ1‧‧‧ included angle

θ2‧‧‧ angle

θ3‧‧‧ angle

A1‧‧‧ direction

A2‧‧‧ direction

In order to make the features and advantages of some embodiments of the present invention more comprehensible, some embodiments are listed below and described in detail with the accompanying drawings.

FIG. 1 is a cross-sectional view of a chemical mechanical polishing apparatus according to some embodiments of the present invention.

2A-2E are cross-sectional views of a wafer attaching film according to some embodiments of the present invention.

3A-3H are cross-sectional views of various stages in a method for manufacturing a wafer attaching film according to some embodiments of the present invention.

4A-4C are cross-sectional views of various stages in a method for manufacturing a wafer attaching film according to other embodiments of the present invention.

FIG. 5A is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 5B is a top view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 5C is a cross-sectional view showing a wafer attaching film in one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 5D is a cross-sectional view of a wafer attaching film in one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 6 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 7 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 8A is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 8B is a top view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 8C is a cross-sectional view of a wafer attaching film showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 9A is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 9B is a top view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 9C is a cross-sectional view showing a wafer attaching film in one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

FIG. 9D is a cross-sectional view showing one step of a method for manufacturing a semiconductor device according to some embodiments of the present invention.

The chemical mechanical polishing equipment and the manufacturing method using the chemical mechanical polishing equipment of some embodiments of the present invention are described in detail below. It should be understood that the following description provides many different embodiments or examples for implementing different aspects of some embodiments of the present invention. The specific elements and arrangements described below are only a simple and clear description of some embodiments of the invention. Of course, these are only examples and not a limitation of the present invention. In addition, duplicate numbers or designations may be used in different embodiments. These repetitions are merely for the purpose of simply and clearly describing some embodiments of the present invention, and do not represent any correlation between the different embodiments and / or structures discussed.

In addition, relative terms such as "lower" or "bottom" and "higher" or "top" may be used in the embodiments to describe the relative relationship between one element of the figure and another element. It can be understood that if the illustrated device is turned upside down, the components described on the "lower" side will become the components on the "higher" side.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with the background or context of the related technology and the present invention, and should not be in an idealized or overly formal manner Interpreted, unless specifically defined in some embodiments of the invention.

Some embodiments of the present invention can be understood together with the drawings, and the drawings of some embodiments of the present invention are also considered as part of the description of the invention. It should be understood that the drawings of some embodiments of the present invention have not been drawn with the scale of actual devices and components. The shapes and thicknesses of the embodiments may be exaggerated in the drawings in order to clearly show the characteristics of some embodiments of the present invention. In addition, the structures and devices in the drawings are schematically shown in order to clearly show the characteristics of some embodiments of the present invention.

In some embodiments of the present invention, relative terms such as "down", "up", "horizontal", "vertical", "below", "above", "top", "bottom", etc. should be used Understand the orientation shown in this paragraph and related drawings. This relative term is for illustrative purposes only, and it does not mean that the device it describes needs to be manufactured or operated in a particular orientation. The terms of joining and connection, such as "connected", "interconnected", etc., unless specifically defined, may mean that two structures are in direct contact, or that two structures are not in direct contact, among which other structures are provided here Between the two structures. Moreover, the term about joining and connecting may also include a case where both structures are movable or both structures are fixed.

FIG. 1 is a cross-sectional view of a chemical mechanical polishing apparatus 100 according to some embodiments of the present invention. In some embodiments of the present invention, the CMP apparatus 100 includes a platform 102 and a polishing pad 104 disposed on the platform 102. Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a rotating element 106 and a rotating shaft 108 connected to the rotating element 106 and the platform 102. In some embodiments of the invention, the rotating element 106 is a motor. In some embodiments of the present invention, the rotating element 106 is used to rotate the rotating shaft 108 and thereby rotate the platform 102 and the polishing pad 104.

Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a polishing head assembly 110, which is used to carry a wafer. In some embodiments of the present invention, the grinding head assembly 110 includes an arm 112, a rotating element 114 disposed on the arm 112, a base 116, and a rotating shaft 118 connecting the rotating element 114 and the base 116. In some embodiments of the invention, the rotating element 114 is a motor. In some embodiments of the present invention, the rotating element 114 is used to rotate the rotating shaft 118 and thereby rotate the base 116.

With continued reference to FIG. 1, in some embodiments of the present invention, the polishing head assembly 110 further includes a wafer attaching film 120 disposed on the base 116. In some embodiments of the present invention, the wafer attaching film 120 is used to attach a wafer.

In some embodiments of the present invention, as shown in FIG. 1, the wafer attaching film 120 has an upper side 122 and a lower side 124 opposite to each other. In some embodiments of the present invention, the upper side 122 of the wafer attaching film 120 faces the base 116 and has a fin 126 and a ring-shaped peripheral sidewall structure 128. As shown in FIG. 1, according to some embodiments of the present invention, the fin 126 and the base 116 are engaged with each other, so that the wafer attaching film 120 is fixed on the base 116. In some embodiments of the present invention, the lower side 124 of the wafer attaching film 120 is used to attach a wafer.

In some embodiments of the present invention, the material of the wafer attaching film 120 is a polymer material. In some embodiments of the present invention, the material of the wafer attaching film 120 includes chloroprene resin, chloroprene resin, polyethylene resin, polypropylene resin, or silicone resin, a combination thereof, or any other suitable material. In some embodiments of the present invention, the material of the wafer attaching film 120 is a hydrophobic material. In some embodiments of the present invention, the wafer attaching film 120 is flexible.

With continued reference to FIG. 1, in some embodiments of the present invention, the polishing head assembly 110 further includes a mask 129. In some embodiments of the present invention, the mask 129 includes a cover plate 130 disposed on the base portion 116, a side structure 132 disposed around the lower side of the cover plate 130 and surrounding the base portion 116, and disposed on the side edge The retaining ring 134 below the structure 132 and surrounds the base 116. In some embodiments of the present invention, the material of the retaining ring 134 is a polymer material, such as polyphenylene sulfide, polyethylene terephthalate, polyether ether ketone, or polybutylene terephthalate. Esters, combinations thereof, or any other suitable material.

Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a first liquid storage tank 136, a pipeline 138, and a nozzle 140 facing the polishing pad 104. As shown in FIG. 1, according to some embodiments of the present invention, the pipeline 138 is connected to the first liquid storage tank 136 and the nozzle 140. In some embodiments of the present invention, the first liquid storage tank 136 is used to store the grinding slurry.

Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a second liquid storage tank 142, a pipeline 144, and a nozzle 146 facing the polishing pad 104. As shown in FIG. 1, according to some embodiments of the present invention, the pipeline 144 is connected to the second liquid storage tank 142 and the nozzle 146. In some embodiments of the present invention, the second liquid storage tank 142 is used to store a cleaning liquid, such as water.

Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a first pressure control unit 170 and a line 172. One end of the line 172 is connected to the first pressure control unit 170. The other end is connected between the central region of the upper side 122 of the wafer attaching film 120 and the base 116. It should be noted that the path of the pipeline 172 is not limited to the path shown in FIG. 1. The pipeline 172 may be connected to the first pressure control unit 170 and the central region of the upper side 122 of the wafer attaching film 120 and the base 116 by any suitable path.

Continuing to refer to FIG. 1, in some embodiments of the present invention, the chemical mechanical polishing apparatus 100 further includes a second pressure control unit 174 and a line 176. One end of the line 176 is connected to the second pressure control unit 174. The other end is connected between the peripheral region of the upper side 122 of the wafer attaching film 120 and the base 116. It should be noted that the path of the pipeline 176 is not limited to the path shown in FIG. 1. The pipeline 176 may be connected to the second pressure control unit 174 and the peripheral region on the upper side 122 of the wafer attaching film 120 and the base 116 by any suitable path.

Next, referring to FIG. 2A, FIG. 2A is a cross-sectional view of a wafer attaching film 120 according to some embodiments of the present invention. It should be noted that, in order to clearly describe the embodiment of the present invention, FIG. 2A does not show the fins 126 and the annular peripheral sidewall structure 128 of the wafer attaching film 120. As shown in FIG. 2A, in some embodiments of the present invention, the underside 124 of the wafer attaching film 120 has a main surface 148 and a plurality of convex structures 150 protruding from the autonomous surface 148.

In some embodiments of the present invention, the lower side 124 of the wafer attaching film 120 is used to attach a wafer. In some embodiments of the present invention, the underside 124 of the wafer attaching film 120 has a plurality of convex structures 150, and the plurality of convex structures 150 can increase the distance between the wafer attaching film 120 and the wafer. The contact area can thereby increase the vandal force and / or adsorption force between the wafer and the underside 124 of the wafer attaching film 120 in a direction parallel to the main surface 148 of the underside 124. That is, in some embodiments of the present invention, the convex structure 150 on the underside 124 of the wafer attaching film 120 can increase the frictional force between the wafer and the wafer attaching film 120 in the lateral direction. Therefore, during the polishing step, some embodiments of the present invention can reduce or prevent the lateral displacement of the wafer from colliding with the retaining ring, thereby improving the yield of the polishing process.

In some embodiments of the present invention, as shown in FIG. 2A, the plurality of convex structures 150 have a rectangular cross section. As shown in FIG. 2A, according to some embodiments of the present invention, the convex structure 150 is perpendicular to the lower side 124 of the wafer attaching film 120.

In some embodiments of the present invention, the diameter D of the plurality of convex structures 150 is about 0.01 μm to about 50 μm, for example, about 0.1 μm to about 10 μm. In some embodiments of the present invention, the roughness of the lower side 124 of the wafer attaching film 120 is about 0.05 μm to about 100 μm, for example, about 1 μm to about 50 μm.

Here, the terms "about" and "approximately" usually indicate within 20% of a given value or range, such as within 10%, and for example within 5%, or within 3%, or 2 Within%, or within 1%, or within 0.5%. The quantity given here is an approximate quantity, that is, the meanings of "about" and "approximately" can still be implied without specifying "about" and "approximately".

In some embodiments of the present invention, the plurality of convex structures 150 are uniformly distributed on the lower side 124 of the wafer attaching film 120. However, in other embodiments of the present invention, the distribution of the plurality of convex structures 150 on the underside 124 of the wafer attaching film 120 is an uneven distribution.

In some embodiments of the present invention, the plurality of convex structures 150 are distributed on the lower side 124 of the entire wafer attaching film 120. However, in other embodiments of the present invention, the plurality of convex structures 150 are distributed on the lower side 124 of a part of the wafer attaching film 120.

In some embodiments of the present invention, the material of the convex structure 150 is the same as the material of the portion of the wafer attaching film 120 except for the convex structure 150. However, in other embodiments of the present invention, the material of the convex structure 150 and the material of the portion of the wafer attaching film 120 other than the convex structure 150 are different.

It should be noted that the embodiment shown in FIG. 2A is only for illustration, and the scope of some embodiments of the present invention is not limited thereto. In addition to the embodiment shown in FIG. 2A described above, the convex structure of some embodiments of the present invention may also have other cross-sectional shapes, as shown in the embodiment shown in FIGS. 2B-2E. Therefore, the scope of some embodiments of the present invention is not limited to the embodiment shown in FIG. 2A.

It should be noted that the same or similar elements or film layers in the following will be denoted by the same or similar reference numerals, and their materials, manufacturing methods and functions are the same or similar as described above, so this part will not be described in the following. To repeat.

FIG. 2B is a cross-sectional view of a wafer attaching film 120 according to other embodiments of the present invention. As shown in FIG. 2B, according to some embodiments of the present invention, the plurality of convex structures 150 have a tapered cross section or a triangular cross section.

FIG. 2C is a cross-sectional view of a wafer attaching film 120 according to other embodiments of the present invention. As shown in FIG. 2C, according to some embodiments of the present invention, the plurality of convex structures 150 have a curved cross section.

As shown in FIG. 2C, according to some embodiments of the present invention, the convex structure 150 and the main surface 148 are connected to a connection point 152, and the connection line between the connection point 152 and the vertex 154 of the convex structure 150 is a first line segment 156. A line segment passing through the connection point 152 and perpendicular to the main surface 148 is a second line segment 158. As shown in FIG. 2C, according to some embodiments of the present invention, the angle θ1 between the first line segment 156 and the second line segment 158 is about 1 degree to about 80 degrees, for example, about 20 degrees to about 70 degrees.

FIG. 2D is a cross-sectional view of a wafer attaching film 120 according to other embodiments of the present invention. As shown in FIG. 2D, according to some embodiments of the present invention, one or more convex structures 150 have an irregular cross-section.

FIG. 2E is a cross-sectional view of a wafer attaching film 120 according to other embodiments of the present invention. As shown in FIG. 2E, according to some embodiments of the present invention, the convex structure 150 may have a stepped cross-section. In detail, in some embodiments of the present invention, as shown in FIG. 2E, the convex structure 150 has a first columnar portion 160 protruding from the autonomous surface 148, and a first columnar portion 160 protruding from the first columnar portion 160. One or more second columnar portions 162. In some embodiments of the present invention, as shown in FIG. 2E, the diameter of the first columnar portion 160 is larger than the diameter of the second columnar portion 162. However, the embodiments of the present invention are not limited thereto. In other embodiments of the present invention, the convex structure 150 may have any suitable cross-sectional structure.

The wafer attaching film 120 can be formed by any suitable method. For example, referring to FIGS. 3A-3E, FIGS. 3A-3E are cross-sectional views of various stages in a method of manufacturing a wafer attaching film 120 according to some embodiments of the present invention. As shown in FIG. 3A, according to some embodiments of the present invention, a carrier board 300 is provided, and a photoresist layer 302 is formed on the carrier board. Next, referring to FIG. 3B, in some embodiments of the present invention, the photoresist layer 302 is patterned to form a plurality of openings (not shown), and a molding material 304 is filled in the plurality of openings. In some embodiments, the molding material 304 is deposited using a chemical vapor deposition (CVD) process, a spin-on process, other applicable processes, or a combination thereof.

Next, referring to FIG. 3C, in some embodiments of the present invention, a photoresist layer 306 is blanket deposited on the photoresist layer 302 and the molding material 304. Next, referring to FIG. 3D, in some embodiments of the present invention, the photoresist layer 306 and the photoresist layer 302 are patterned to form a plurality of openings (not shown), and molding is filled in the plurality of openings. Material 308. Next, in some embodiments of the present invention, the photoresist layer 306 and the photoresist layer 302 are removed to form an opening 310, as shown in FIG. 3E.

Next, referring to FIG. 3F, in some embodiments of the present invention, a wafer attachment material layer 312 is deposited on the molding material 308. In some embodiments of the present invention, the wafer attachment material layer 312 is filled in the opening 310, as shown in FIG. 3F. In some embodiments, the wafer attachment material layer 312 is deposited using a chemical vapor deposition (CVD) process, a spin-on process, other applicable processes, or a combination thereof.

Next, referring to FIG. 3G, in some embodiments of the present invention, the wafer attachment material layer 312 is peeled from the carrier plate 300 and the molding materials 304 and 308. In some embodiments of the present invention, the peeled wafer attachment material layer 312 is a wafer attachment film.

As shown in FIG. 3G, according to some embodiments of the present invention, the wafer attaching material layer 312 (or wafer attaching film) has a plurality of convex structures 150 protruding from the autonomous surface 148. As shown in FIG. 3G, according to some embodiments of the present invention, the convex structure 150 has a first columnar portion 160 protruding from the autonomous surface 148, and one or more second portions protruding from the first columnar portion 160. Columnar portion 162.

In some embodiments of the present invention, referring to FIG. 3H, the surface of the stripped wafer attachment material layer 312 (or wafer attachment film) may be further subjected to a surface treatment step, and the wafer attachment material layer 312 (or A surface treatment layer 314 is formed on the surface of the wafer attachment film). In some embodiments of the present invention, the surface treatment layer 314 may be a protective layer for protecting the wafer attaching material layer 312. However, the embodiments of the present invention are not limited thereto. In other embodiments of the present invention, the surface treatment layer 314 may be a surface modification layer. The surface modification layer may have water resistance, for example, or its friction coefficient is greater than that of the wafer attachment material layer 312. In other embodiments of the present invention, the surface treatment layer 314 may also be any film layer that can increase the function of the wafer attaching material layer 312. In other embodiments of the present invention, the surface treatment step of the peeled wafer attachment material layer 312 (or wafer attachment film) may not be performed.

4A-4C are cross-sectional views of various stages in a method for manufacturing a wafer attaching film according to other embodiments of the present invention. Referring to FIG. 4A, in some embodiments of the present invention, a mold material plate 400 is provided. In some embodiments of the present invention, the material of the molding material plate 400 is wax. Next, a plurality of openings 404 are engraved in the molding material plate 400 using the probe 402.

Next, referring to FIG. 4B, in some embodiments of the present invention, a wafer attaching material layer 406 is filled in the plurality of openings 404. In some embodiments, the wafer attachment material layer 406 is deposited using a chemical vapor deposition (CVD) process, a spin-on process, other applicable processes, or a combination thereof.

Next, referring to FIG. 4C, in some embodiments of the present invention, the wafer attachment material layer 406 is peeled from the molding material plate 400. In some embodiments of the present invention, the peeled wafer attachment material layer 406 is a wafer attachment film.

However, the embodiments of the present invention are not limited thereto. In other embodiments of the present invention, the wafer attaching film can be made by other applicable processes. In other embodiments of the present invention, the wafer attaching film may be made by an injection molding process, an electrospinning process, a three-dimensional printing process, a parallel process, other applicable processes, or a combination thereof.

Next, referring to FIGS. 5A, 6, 7, 8A, 9A, and 9D, FIGS. 5A, 6, 7, 8A, 9A, and 9D show the manufacturing method of the semiconductor device according to some embodiments of the present invention at each stage. Sectional view.

First, referring to FIG. 5A, in some embodiments of the present invention, a wafer 500 is provided. In some embodiments, the wafer 500 may be a semiconductor wafer, such as a silicon wafer. In some embodiments, the wafer 500 includes an elemental semiconductor material (eg, silicon) or other elemental semiconductor material, such as germanium. In some other embodiments, the wafer 500 includes a compound semiconductor. The compound semiconductor may include gallium arsenide, silicon carbide, indium arsenide, indium phosphide, other suitable compound semiconductors, or a combination thereof.

In some embodiments, the wafer 500 includes a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate overlying the insulating layer can be fabricated by using a separation by implantation of oxygen (SIMOX) process, a wafer bonding process, other applicable methods, or a combination thereof.

In some embodiments of the present invention, the wafer 500 includes components formed on the wafer and various film layers covering the wafer. Any desired semiconductor element may have been formed thereon, but in order to simplify the diagram here , Only expressed as a flat wafer. In addition, the "wafer surface" includes the uppermost and exposed film layer on a semiconductor wafer, such as a silicon surface, an insulating layer, and / or a metal wire.

In some embodiments of the present invention, various components are formed in the wafer 500. This component may include, for example, a transistor (e.g., a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS) transistor, a bipolar junction transistor (BJT), a high voltage transistor, a high frequency Transistors, P-channel and / or N-channel field effect transistors, etc.), diodes, or any other suitable device. In some embodiments of the present invention, the various elements described above can be formed by various steps. This step may include deposition, etching, implantation, lithography, annealing, and / or any other suitable steps.

In some embodiments of the present invention, as shown in FIG. 5A, the wafer 500 has a first surface 502 and a second surface 504 opposite to each other. Next, referring to FIG. 5A, in some embodiments of the present invention, the wafer 500 is placed on a loading device 506. As shown in FIG. 5A, according to some embodiments of the present invention, the loading device 506 includes a case 508, a wafer carrier 510 disposed in the case 508, and a shaft 512 supporting the wafer carrier 510.

As shown in FIG. 5A, according to some embodiments of the present invention, the wafer 500 is disposed on the wafer carrier 510, and the second surface 504 of the wafer 500 faces the wafer carrier 510.

Next, referring to FIG. 5A, in some embodiments of the present invention, the polishing head assembly 110 is moved to align the base 116 and the wafer attaching film 120 of the polishing head assembly 110 with the wafer 500. In some embodiments of the present invention, the polishing head assembly 110 attaches the first surface 502 of the wafer 500 with the lower side 124 of the wafer attaching film 120, as shown in FIG. 5A.

Next, in some embodiments of the present invention, the first pressure control unit 170 and the second pressure control unit 174 decompress the pressure between the upper side 122 of the wafer attaching film 120 and the base 116. In some embodiments of the present invention, the first pressure control unit 170 and the second pressure control unit 174 evacuate between the upper side 122 of the wafer attaching film 120 and the base 116 to make the upper side 122 of the wafer attaching film 120 It is in a vacuum state with the base portion 116. In addition, in some embodiments of the present invention, the edge of the wafer attaching film 120 is pressurized so that the edge of the wafer attaching film 120 is in close contact with the wafer 500. In some embodiments of the present invention, the wafer 500 is adsorbed by the wafer attaching film 120 through the above steps. In other words, the wafer 500 is placed on the polishing head assembly 110 of the chemical mechanical polishing apparatus 100. In some embodiments of the present invention, the edge of the wafer attaching film 120 is a region of the wafer attaching film 120 corresponding to the annular peripheral sidewall structure 128.

5A-5B, in some embodiments of the present invention, after the wafer attaching film 120 contacts the wafer 500, and before the wafer attaching film 120 adsorbs the wafer 500 in the above steps, Rotating the rotation shaft 118 causes the base 116 and the wafer attaching film 120 to rotate relative to the wafer 500 in a first rotation direction, as shown by arrow R1. In some embodiments of the present invention, when the rotating shaft 118 is rotated, the cover 129 is also rotated accordingly. It should be noted that, in order to clearly describe the embodiment of the present invention, FIG. 5B only shows the base 116, the wafer attaching film 120, the wafer 500, the arm 112, and the rotation axis 118, and other components are not shown.

It should be noted that in order to clearly show the base 116, the wafer attaching film 120, and the wafer 500, the edges of the base 116 and the wafer attaching film 120 in FIG. 5B are not shown as being the same as those of the wafer 500. The edges overlap. However, in some embodiments of the present invention, the edges of the base 116 and the wafer attaching film 120 may overlap the edges of the wafer 500, as shown in FIG. 5A.

Next, referring to FIGS. 5C-5D, FIG. 5C is a wafer along the line segment 530 before the base 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in the first rotation direction in some embodiments of the present invention. A cross-sectional view of the attaching film 120 and the wafer 500. FIG. 5D shows some embodiments of the present invention. After the base 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in a first rotation direction, the wafer attaching film 120 and the wafer 500 along the line segment 530 are rotated. Sectional view.

As shown in FIG. 5C, according to some embodiments of the present invention, before the base 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in the first rotation direction, the convex shape of the lower side 124 of the wafer attaching film 120 The structure 150 contacts the first surface 502 of the wafer 500, and the convex structure 150 of the wafer attaching film 120 is substantially perpendicular to the first surface 502 of the wafer 500.

As shown in FIG. 5D, according to some embodiments of the present invention, after the base portion 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in the first rotation direction, between the plurality of convex structures 150 and the main surface 148 An angle θ2 is set. In other words, the convex structure 150 is disposed between the lower side 124 of the wafer attaching film 120 and the wafer 500 in an inclined manner. In some embodiments of the present invention, since the convex structure 150 is disposed in an inclined manner between the underside 124 of the wafer attaching film 120 and the wafer 500, it is perpendicular to the crystal compared to the convex structure 150. The first surface 502 of the circle 500 can increase the contact area between the convex structure 150 and the wafer 500, and can further increase the distance between the wafer and the underside 124 of the wafer attaching film 120 parallel to the underside 124. Van der Waals and / or Adhesive forces in the direction.

In some embodiments of the present invention, an angle θ2 is also interposed between the plurality of convex structures 150 and the wafer 500. In some embodiments of the present invention, the angle θ2 is about 10 degrees to about 89 degrees, such as about 20 degrees to about 70 degrees.

However, the embodiments of the present invention are not limited thereto. In some other embodiments of the present invention, the steps of rotating the base 116 and the wafer attaching film 120 relative to the wafer 500 in the first rotation direction without performing the above steps 5C-5D, and the wafer attaching film 120 may be directly performed. Adsorb wafer 500.

In other embodiments of the present invention, the convex structure 150 has a curved cross section or an irregular cross section. Therefore, the base portion 116 and the wafer attaching film 120 are aligned with respect to the wafer 500 even if the above-mentioned 5C-5D drawings are not performed. In a step of rotating, the wafer 500 is directly adsorbed by the wafer attaching film 120, and the convex structure 150 is also arranged on the lower side 124 of the wafer attaching film 120 and the wafer 500 in an inclined manner. between.

Next, referring to FIG. 6, in some embodiments of the present invention, the polishing head assembly 110 is moved, so that the polishing head assembly 110 and the wafer 500 are placed on the polishing pad 104 of the chemical mechanical polishing apparatus 100.

Next, referring to FIG. 7, in some embodiments of the present invention, the mask 129 is moved down so that the retaining ring 134 contacts the polishing pad 104 of the chemical mechanical polishing apparatus 100.

Next, referring to FIG. 8A, in some embodiments of the present invention, the second surface 504 of the wafer 500 is brought into contact with the polishing pad 104 of the chemical mechanical polishing apparatus 100. In some embodiments of the present invention, the first pressure control unit 170 and the second pressure control unit 174 apply pressure between the upper side 122 and the base 116 of the wafer attaching film 120 to make the wafer attaching film 120 toward The second surface expands downward, and thereby the second surface 504 of the wafer 500 contacts the polishing pad 104 of the chemical mechanical polishing apparatus 100.

Referring to FIG. 8A, in some embodiments of the present invention, the first pressure control unit 170 applies a gas between the central region of the upper side 122 of the wafer attaching film 120 and the base 116 to apply a pressure to the wafer attaching film 120. A pressure is applied between the central region of the upper side 122 and the base 116, and a cavity 800 is formed between the central region of the upper side 122 of the wafer attaching film 120 and the base 116. Referring to FIG. 8A, in some embodiments of the present invention, the second pressure control unit 174 applies a gas between the peripheral area of the upper side 122 of the wafer attaching film 120 and the base 116 to apply pressure to the wafer attaching film 120. A pressure is applied between the peripheral region of the upper side 122 and the base 116, and a cavity 802 is formed between the peripheral region of the upper side 122 of the wafer attaching film 120 and the base 116. It should be noted that, in some embodiments of the present invention, the cavity 802 on the left and the cavity 802 on the right in FIG. 8A are in communication with each other.

Next, refer to FIGS. 8A-8B, where FIG. 8B is a top view of FIG. 8A. As shown in FIGS. 8A-8B, in some embodiments of the present invention, the wafer 500 is rotated to polish the second surface 504 of the wafer 500. See also FIG. 8C, which is a cross-sectional view of the wafer attaching film 120 and the wafer 500 along the line segment 804 when the wafer 500 is polished. In some embodiments of the present invention, as shown in FIGS. 8A-8C, according to some embodiments of the present invention, the rotating shaft 118 is rotated by the rotating element 114, and thereby the base 116, the wafer attaching film 120, and The wafer 500 on the wafer attaching film 120.

In some embodiments of the present invention, as shown in FIGS. 8A-8C, the rotating shaft 118 and the wafer attaching film 120 are rotated in a first rotation direction, as shown by an arrow R2. In some embodiments of the present invention, as shown in FIGS. 8B-8C, the wafer 500 is driven by the wafer attaching film 120, so it is also rotated in the first rotation direction, as shown by arrow R3. In addition, in some embodiments of the present invention, as shown in FIGS. 8A-8C, during the polishing step, the polishing pad 104 is also rotated in the first rotation direction, as shown by arrow R4.

In addition, in some embodiments of the present invention, as shown in FIG. 8A, during the grinding step, the first liquid storage tank 136 may spray the polishing slurry 806 onto the polishing pad 104 through the line 138 and the nozzle 140.

In addition, in some embodiments of the present invention, as shown in FIG. 8C, during the polishing step, the convex structure 150 of the wafer attaching film 120 can increase the distance between the wafer attaching film 120 and the wafer 500 during the polishing step. The contact area can thus increase the van der Waals force and / or the adsorption force between the wafer 500 and the lower side 124 of the wafer attaching film 120 in a direction parallel to the lower side 124. Therefore, in some embodiments of the present invention, during the polishing step, the adsorption force between the first surface 502 of the wafer 500 and the lower side 124 of the wafer attaching film 120 in the direction A1 parallel to the lower side 124 Greater than the adsorption force in the direction A2 of the vertical lower side 124. Therefore, in some embodiments of the present invention, during the polishing step, the probability of the lateral displacement of the wafer 500 and colliding with the retaining ring 134 can be reduced or prevented, and the yield of the polishing process can be improved by this.

In addition, in some embodiments of the present invention, as shown in FIG. 8C, during the grinding step, an angle θ3 is set between the plurality of convex structures 150 and the main surface 148, and the angle θ3 is about 5 degrees to About 80 degrees, for example, about 15 degrees to about 50 degrees.

In addition, referring to FIG. 8A, in some embodiments of the present invention, during the grinding step, the first pressure control unit 170 and the second pressure control unit 174 may continue to attach the upper side 122 and the base 116 of the wafer attachment film 120. Pressure is applied between the wafers 500 to continuously attach the second surface 504 of the wafer 500 to the polishing pad 104 of the chemical mechanical polishing apparatus 100.

Referring to FIG. 8A, in some embodiments of the present invention, during the grinding step, the first pressure control unit 170 applies a gas between the central region of the upper side 122 of the wafer attaching film 120 and the base 116 to the wafer, A cavity 800 is continuously formed between the central region of the upper side 122 of the adhesive film 120 and the base 116. Referring to FIG. 8A, in some embodiments of the present invention, the second pressure control unit 174 applies a gas between the peripheral area of the upper side 122 of the wafer attaching film 120 and the base 116 to apply a pressure to the wafer attaching film 120. A cavity 802 is continuously formed between the peripheral region of the upper side 122 and the base 116.

In some embodiments of the present invention, after the polishing step is finished, the rotating shaft 118, the base 116, the wafer attaching film 120, the wafer 500 adsorbed on the wafer attaching film 120, and the polishing pad 104 are stopped. In some embodiments of the present invention, before and / or after the polishing step is completed, the second liquid storage tank 142 may spray the cleaning liquid on the polishing pad 104 and the wafer 500 through the pipeline 144 and the nozzle 146 to clean the polishing pad 104. And wafer 500. In some embodiments of the invention, the cleaning liquid is water.

Next, referring to FIG. 9A, in some embodiments of the present invention, the polishing head assembly 110 is moved to place the wafer 500 on the wafer carrier 510 of the loading device 506. Then, in some embodiments of the present invention, the wafer attaching film 120 may be adjusted by adjusting the pressure applied to the upper side 122 of the wafer attaching film 120 by the first pressure control unit 170 and the second pressure control unit 174. The wafer 500 is incompletely attached, and the gas in the environment can enter between the wafer attaching film 120 and the wafer 500, so that the vacuum between the wafer attaching film 120 and the wafer 500 is no longer a vacuum. status. Thereby, the wafer attaching film 120 can no longer adsorb the wafer 500.

Next, refer to FIGS. 9A-9B, where FIG. 9B is a top view of FIG. 9A. In some embodiments of the present invention, after the wafer attaching film 120 no longer adsorbs the wafer 500, the base 116 and the wafer attaching film 120 may be turned toward the second side relative to the wafer 500 by rotating the rotating shaft 118. Turn in the direction of rotation, as shown by arrow R5. In some embodiments of the present invention, the second rotation direction is opposite to the aforementioned first rotation direction. In some embodiments of the present invention, the first rotation direction is a clockwise direction, and the second rotation direction is a counterclockwise direction. However, in other embodiments of the present invention, the aforementioned first rotation direction is a counterclockwise direction, and the second rotation direction is a clockwise direction.

Next, see FIG. 9C. FIG. 9C shows some embodiments of the present invention. After the base 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in the second rotation direction, the wafer attaching film 120 and the wafer 500 along the line segment 900 are rotated. Sectional view.

As shown in FIG. 9C, according to some embodiments of the present invention, after the base portion 116 and the wafer attaching film 120 are rotated relative to the wafer 500 in the second rotation direction, the convex structure 150 of the wafer attaching film 120 is substantially resistant. The first surface 502 is perpendicular to the wafer 500. Since the convex structure 150 of the wafer attaching film 120 is substantially perpendicular to the first surface 502 of the wafer 500, the contact area between the wafer attaching film 120 and the wafer 500 can be reduced, and the crystal The suction force between the circle 500 and the wafer attaching film 120. Therefore, the wafer 500 can be more easily separated from the wafer attaching film 120 in the subsequent steps.

Next, referring to FIG. 9D, in some embodiments of the present invention, the wafer 500 is moved downward with respect to the wafer attaching film 120 in the direction of the lower side 124 of the vertical wafer attaching film 120 to move the wafer. The circle 500 is separated from the wafer attaching film 120. In some embodiments of the present invention, the wafer carrier 510 may be moved downward to separate the wafer 500 placed on the wafer carrier 510 from the wafer attaching film 120. However, in other embodiments of the present invention, the polishing head assembly 110 and / or the wafer attaching film 120 may be moved upward to separate the wafer 500 from the wafer attaching film 120.

In summary, in some embodiments of the present invention, since the convex structure of the wafer attaching film can increase the contact area between the wafer attaching film and the wafer, the wafer can be increased by this. Van der Waals and / or suction forces between the lower sides of the adhesive film in a direction parallel to the lower sides. Therefore, in some embodiments of the present invention, during the polishing step, the probability of lateral displacement of the wafer and collision with the retaining ring can be reduced or prevented, and the yield of the polishing process can be improved by this.

According to some embodiments, a chemical mechanical polishing apparatus is provided, including: a platform; a polishing pad provided on the platform; and a polishing head assembly for carrying a wafer, wherein the polishing head assembly includes: a base; and a wafer attaching film, It is located on the base, where the wafer attaching film has upper and lower sides opposite to each other, wherein the upper side is toward the base, and the lower side is for attaching the wafer, and has a main surface and an autonomous surface protruding as much as possible. Convex structure.

According to some embodiments, the material of the wafer attaching film includes chloroprene resin, chloroprene resin, polyethylene resin, polypropylene resin, silicone resin, or a combination thereof. According to some embodiments, the plurality of convex structures have a rectangular cross section, a tapered cross section, a curved cross section, or an irregular cross section. According to some embodiments, the convex structure is perpendicular to the lower side of the wafer attaching film.

According to some embodiments, the convex structure and the main surface are connected to the connection point, and the line connecting the vertex of the convex structure and the connection point is the first line segment, and the line segment passing through the connection point and perpendicular to the main surface is the second line segment. , And the angle between the first line segment and the second line segment is 10 degrees to 89 degrees.

According to some embodiments, a method for manufacturing a semiconductor device includes: providing a wafer, wherein the wafer has a first surface and a second surface opposite to each other; and placing the wafer on a polishing head assembly of a chemical mechanical polishing device Wherein the polishing head assembly includes a base and a wafer attaching film provided on the base, wherein the first surface of the wafer is attached to the lower side of the wafer attaching film; and the second surface of the wafer is contacted with the chemical machinery A polishing pad of a polishing device; and rotating the wafer to polish the second surface of the wafer, wherein during the polishing step, the first surface of the wafer and the lower side of the wafer attaching film are in a direction parallel to the lower side The adsorption force is larger than the adsorption force in the direction perpendicular to the lower side.

According to some embodiments, the lower side of the wafer attachment film has a plurality of convex structures protruding from the main surface and the autonomous surface, and the first surface of the wafer contacts the plurality of convex structures, and during the polishing step, the above An angle is set between the plurality of convex structures and the main surface, and the angle is 5 degrees to 80 degrees.

According to some embodiments, the wafer attaching film further includes an upper side, and the lower and upper sides are opposite to each other, and the upper side of the wafer attaching film is pressed during the polishing step. According to some embodiments, when the upper side of the wafer attaching film is pressurized, a cavity is formed between the upper side of the wafer attaching film and the base.

According to some embodiments, after the polishing step, the wafer is moved in a direction perpendicular to the lower side of the wafer attaching film to separate the wafer from the wafer attaching film.

It is worth noting that the above-mentioned component dimensions, component parameters, and component shapes are not the limiting conditions of the present invention. Those skilled in the art can adjust these settings according to different needs. In addition, the chemical mechanical polishing equipment and the manufacturing method using the chemical mechanical polishing equipment according to the embodiments of the present invention are not limited to the states shown in FIGS. 1-9D. Some embodiments of the present invention may only include any one or more features of any one or more of the embodiments of Figures 1-9D. In other words, not all the illustrated features must be implemented in the chemical mechanical polishing equipment and the manufacturing method using the chemical mechanical polishing equipment in some embodiments of the present invention at the same time.

Although some embodiments of the present invention and their advantages have been disclosed as above, it should be understood that any person with ordinary knowledge in the technical field may make changes without departing from the spirit and scope of some embodiments of the present invention described above. , Substitution and retouching. In addition, the protection scope of some embodiments of the present invention is not limited to the processes, machines, manufacturing, material composition, devices, methods, and steps in the specific embodiments described in the description. Anyone with ordinary knowledge in the technical field may Understand the current or future development of processes, machines, manufacturing, material composition, devices, methods and steps from the disclosure of some embodiments of the present invention, as long as they can implement substantially the same functions or obtain substantially the same in the embodiments described herein The same results can be used according to some embodiments of the invention. Therefore, the protection scope of some embodiments of the present invention includes the above-mentioned processes, machines, manufacturing, material composition, devices, methods, and steps. In addition, each patent application scope constitutes a separate embodiment, and the protection scope of some embodiments of the present invention also includes a combination of each patent application scope and embodiment.

Claims (10)

    A chemical mechanical polishing device includes: a platform; a polishing pad provided on the platform; a polishing head assembly for carrying a wafer, wherein the polishing head assembly includes: a base; and a wafer attaching film Is provided on the base, wherein the wafer attaching film has an upper side and a lower side which are opposite sides to each other, wherein the upper side is toward the base and the lower side is for attaching the wafer and has a The main surface and a plurality of convex structures protruding from the main surface.         The chemical mechanical polishing equipment according to item 1 of the scope of patent application, wherein the material of the wafer attachment film includes chloroprene resin, chloroprene resin, polyethylene resin, polypropylene resin, silicone resin, or the above combination.         The chemical mechanical polishing equipment according to item 1 of the scope of patent application, wherein the convex structures have a rectangular cross section, a tapered cross section, a curved cross section, or an irregular cross section.         The chemical mechanical polishing equipment according to item 1 of the patent application scope, wherein the convex structure is perpendicular to the lower side of the wafer attaching film.         The chemical mechanical polishing equipment according to item 1 of the scope of the patent application, wherein the convex structure is connected to the main surface at a connection point, and the line connecting the vertex of the convex structure and the connection point is a first line segment. ; A line segment passing through the connection point and perpendicular to the main surface is a second line segment, and an angle between the first line segment and the second line segment is 1 degree to 80 degrees.         A method for manufacturing a semiconductor device includes: providing a wafer, wherein the wafer has a first surface and a second surface opposite to each other; and placing the wafer on a polishing head assembly of a chemical mechanical polishing device Wherein the polishing head assembly includes a base and a wafer attaching film disposed on the base, wherein the first surface of the wafer is attached to a lower side of one of the wafer attaching films; The second surface of the wafer contacts a polishing pad of the chemical mechanical polishing equipment; and rotating the wafer to polish the second surface of the wafer; wherein during the polishing step, the first surface of the wafer An adsorption force in a direction parallel to the lower side and the lower side of the wafer attaching film is greater than an adsorption force in a direction perpendicular to the lower side.         The method for manufacturing a semiconductor device according to item 6 of the scope of patent application, wherein the lower side of the wafer attaching film has a main surface and a plurality of convex structures protruding from the main surface, and The first surface contacts the convex structures; during the grinding step, an angle is set between the convex structures and the main surface, and the angle is 5 degrees to 80 degrees.         According to the method for manufacturing a semiconductor device according to item 6 of the patent application scope, wherein the wafer attaching film further includes an upper side, wherein the lower side and the upper side are opposite to each other; and during the polishing step, the crystal The upper side of the circular sticking film is pressurized.         The method for manufacturing a semiconductor device according to item 8 of the scope of patent application, wherein when the upper side of the wafer attaching film is pressurized, a cavity is formed between the upper side of the wafer attaching film and the base. .         The method for manufacturing a semiconductor device according to item 6 of the scope of patent application, wherein after the polishing step, the wafer is moved in a direction perpendicular to the lower side of the wafer attaching film to remove the wafer from the wafer. The wafer attachment film is separated.