TWI673114B - Substrate processing apparatus - Google Patents

Abstract

A through hole (21) is provided in the first holding portion (2) of the substrate processing apparatus (1). The through hole (21) has a substrate (9) through which an upper opening (22) can be passed. The diameter of a part of the inner peripheral surface (24) of the through hole (21) is smaller than that of the substrate (9). The first holding portion (2) contacts the inner peripheral surface (24) of the through hole (21) to the outer edge portion of the substrate (9) from below and holds the substrate (9) in a horizontal state. The processing liquid supply unit (4) supplies the processing liquid to the upper surface (91) of the substrate (9). The processing liquid supplied from the processing liquid supply section (4) is stored below the upper end of the through hole (21) on the upper surface (91) of the substrate (9) held by the first holding section (2) and A storage space (20) surrounded by the inner peripheral surface (24) of the through hole (21). The processing liquid in the storage space (20) flows downward from between the substrate (9) and the inner peripheral surface (24) of the through hole (21), and is received by the lower liquid contacting portion (6). In the substrate processing apparatus (1), it is possible to appropriately clean the discharge path of the processing liquid.

Description

   Substrate processing device   

The present invention relates to a technology for processing a substrate.

Conventionally, in the manufacturing steps of a semiconductor substrate (hereinafter simply referred to as a "substrate"), various processes are applied to the substrate. For example, Japanese Unexamined Patent Publication No. 2012-92390 (Patent Document 1) and Japanese Unexamined Patent Publication No. 2013-10996 (Patent Document 2) disclose a plating processing apparatus for supplying a plating solution onto a substrate. Instead, a plating treatment is applied.

In the plating processing apparatus of Patent Document 1, first, a replacement plating processing solution containing palladium is supplied to a substrate being rotated, and the substrate is subjected to palladium plating. Next, after the substrate is rinsed, the chemical reduction plating treatment liquid is supplied to the rotating substrate, and the substrate is subjected to a plating treatment. In this substrate processing apparatus, the plating treatment liquid supplied to the substrate is scattered from the outer edge portion of the substrate toward the surroundings by rotation of the substrate, is caught by a cup, and is discharged outside the apparatus.

In the plating processing apparatus of Patent Document 2, after performing an incubation step for stopping the rotation of the substrate while the substrate is continuously supplied with a plating liquid, and performing an incubation step of the substrate, an incubation step is performed. A plating film growing step in which the substrate is rotated and the plating film is grown.

In addition, in the plating processing apparatuses of Patent Literature 1 and Patent Literature 2, a cover portion in which three discharge ports are stacked is disposed around the substrate rotation holding means, and the cover portion is used to catch the scattering from the rotating substrate. Plating solution. In this cover portion, since a plurality of discharge ports stacked are narrow, there is a possibility that the inside of the cover portion cannot be easily cleaned by the discharge path of the plating solution.

The present invention is applied to a substrate processing apparatus for processing a substrate, and an object thereof is to properly clean a discharge path of a processing liquid.

A substrate processing apparatus according to a preferred embodiment of the present invention includes a first holding portion provided with a through hole having a substrate through which an upper portion is opened and a portion of an inner peripheral surface having a smaller diameter than the substrate, so that the foregoing The inner peripheral surface of the through-hole contacts the outer edge portion of the substrate from below and holds the substrate horizontally; the second holding portion is positioned below the through-hole; the holding portion moving mechanism makes the above-mentioned through the through-hole The second holding portion is moved upward, thereby bringing the second holding portion into contact with the lower surface of the substrate, and performing receiving and receiving from the first holding portion to the substrate of the second holding portion; A processing liquid is supplied onto the upper surface of the substrate; and a lower liquid contacting portion is located below the through hole. The processing liquid supplied from the processing liquid supply unit is stored in a storage space. The storage space is surrounded by the upper surface of the substrate and the inner peripheral surface of the through-hole. The upper end of the hole is also held below by the first holding portion. The substrate is transferred from the first holding portion to the second holding portion, whereby the processing liquid of the storage space flows downward from between the substrate and the inner peripheral surface of the through-hole and is received by the lower portion. The liquid part catches. According to the substrate processing apparatus described above, it is possible to appropriately clean the discharge path of the processing liquid.

Preferably, the substrate processing apparatus further includes a cleaning unit configured to clean the lower liquid-contacting unit.

Preferably, the substrate processing apparatus further includes: a rotation mechanism for rotating the second holding part above the upper end of the through hole; and an upper liquid contact part for holding the second holding part from the second holding part. The processing liquid scattered from the substrates rotating together toward the surroundings.

More preferably, the upper liquid contact portion is provided with a first upper liquid contact portion, which is connected to the first holding portion and protrudes upward from the first holding portion.

More preferably, the upper liquid contacting unit further includes: a second upper liquid contacting unit that receives the processing liquid scattered from the substrate at an outer side in the radial direction and above the first upper liquid contacting unit.

Preferably, the lower liquid-contacting portion is provided with a first lower liquid-contacting portion disposed below the through-hole, and configured to catch a direction from between the substrate and the inner peripheral surface of the through-hole. The processing liquid flowing below; and the second lower liquid-contacting portion, which is disposed on the lower side than the through-hole, and is located inward in the radial direction from the first lower liquid-contacting portion, and is used to be located above the first lower liquid-contacting portion The processing liquid flowing downward from between the substrate and the inner peripheral surface of the through hole is received in a state where the opening is closed.

Preferably, the processing liquid stored in the storage space is a plating liquid used in the electroless plating treatment of the substrate.

The above and other objects, features, aspects, and advantages of the present invention will be made clear by the following detailed description of the present invention with reference to the accompanying drawings.

1.1a to 1d‧‧‧‧ substrate processing equipment

2.2a to 2d‧‧‧First holding section

4‧‧‧ Treatment liquid supply department

5, 5a, 5b, 5d

6, 6c, 6d

8‧‧‧Plating liquid unit

9‧‧‧ substrate

11‧‧‧shell

20‧‧‧Storage space

21‧‧‧through hole

22‧‧‧ (upper opening) upper opening

23‧‧‧ (the first holding part) lower opening

24‧‧‧ (in the through hole of the first holding portion) Around

25‧‧‧step difference

26‧‧‧ (top)

27‧‧‧mounting surface

28‧‧‧ inclined lower surface

31‧‧‧Second Holding Department

32‧‧‧ holding unit moving mechanism

33‧‧‧Rotating mechanism

41‧‧‧Nozzle

45, 45a‧‧‧well

51, 51b

52‧‧‧Second upper wetting section

53‧‧‧External drainage department

61‧‧‧ Lower Wetted Block

62‧‧‧ Lower drainage

63‧‧‧ (of the lower wetted area)

64, 64d

65, 65d

66, 66d

67‧‧‧First lower drainage

71, 71c‧‧‧washing department

72‧‧‧Heating Department

73‧‧‧Gas Injection Department

74‧‧‧ Attraction

81‧‧‧plating bath

82‧‧‧ supply channel

83‧‧‧Recovery flow path

84‧‧‧Circulation flow path

91‧‧‧ (of the substrate)

92‧‧‧ (of the substrate)

311‧‧‧Jig Department

312‧‧‧ support

451, 451a‧‧‧well

452‧‧‧ Next door

453‧‧‧Down recess

454‧‧‧First Stream

455‧‧‧Second stream

511, 511b‧‧‧ (first upper wetted part) inner peripheral surface

641‧‧‧First bag

642‧‧‧ (of the first lower wetted part)

643‧‧‧ (the first lower wetted part) upper opening

651‧‧‧Second Bag Department

652‧‧‧ (of the second lower wetted part)

J1‧‧‧Center axis

FIG. 1 is a longitudinal sectional view of a substrate processing apparatus according to a first embodiment.

FIG. 2 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 3 is a diagram showing a processing flow of a substrate.

FIG. 4 is a longitudinal sectional view of a substrate processing apparatus.

Fig. 5 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 6 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 7 is a diagram showing the structure of a plating solution unit.

Fig. 8 is a longitudinal sectional view of a trap portion.

FIG. 9 is a longitudinal sectional view of another well portion.

FIG. 10 is a longitudinal sectional view of another substrate processing apparatus.

FIG. 11 is a longitudinal sectional view of another substrate processing apparatus.

FIG. 12 is a longitudinal sectional view of a substrate processing apparatus according to a second embodiment.

FIG. 13A is a diagram showing a processing flow of a substrate.

FIG. 13B is a diagram showing a processing flow of the substrate.

14 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 15 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 16 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 17 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 18 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 19 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 20 is a longitudinal sectional view of a substrate processing apparatus.

FIG. 21 is a longitudinal sectional view of another substrate processing apparatus.

FIG. 22 is a longitudinal sectional view of another substrate processing apparatus.

FIG. 23 is a longitudinal sectional view of another substrate processing apparatus.

1 and 2 are longitudinal sectional views showing the structure of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a semiconductor substrate 9 (hereinafter referred to as "substrate 9") one by one. In the substrate processing apparatus 1, for example, a plating solution is supplied to the substrate 9, and the substrate 9 is subjected to an electroless plating treatment.

The substrate processing apparatus 1 includes a housing 11, a first holding portion 2, a second holding portion 31, a holding portion moving mechanism 32, a rotation mechanism 33, a processing liquid supply portion 4, an upper liquid contact portion 5, and a lower contact portion. The liquid part 6, the cleaning part 71, the heating part 72 (refer FIG. 4 mentioned later), and the gas injection part 73. The first holding portion 2, the second holding portion 31, the processing liquid supply portion 4, the upper liquid contact portion 5 and the lower liquid contact portion 6 are housed inside the casing 11. The first holding portion 2, the holding portion moving mechanism 32, the rotation mechanism 33, the upper liquid contact portion 5 and the lower liquid contact portion 6 are fixed to the housing 11. The second holding portion 31 is attached to the casing 11 so as to be movable in the vertical direction. The space in the casing 11 is, for example, a closed space, and an airflow (ie, down flow) downward from the top cover portion of the casing 11 is formed in the closed space.

The first holding portion 2 is a substantially cylindrical portion with the central axis J1 facing the vertical direction as a center. The first holding portion 2 is provided with a through hole 21 penetrating in the vertical direction. A cross section perpendicular to the vertical direction of the through hole 21 is a substantially circular shape with the center axis J1 as the center at each position in the vertical direction. The through hole 21 includes an upper opening 22 and a lower opening 23. The upper opening 22 is located at the upper end of the through hole 21. The lower opening 23 is located at the lower end of the through hole 21. The upper opening 22 and the lower opening 23 have a substantially circular shape perpendicular to the central axis J1.

The diameter of the upper opening 22 (hereinafter simply referred to as "diameter") is larger than the diameter of the substrate 9. Therefore, the substrate 9 can pass through the upper opening 22 of the through hole 21. Part of the inner peripheral surface 24 of the through hole 21 in the up-down direction The diameter of the plate 9 is still small. In the example shown in FIG. 1, the diameter of the inner peripheral surface 24 of the through-hole 21 (ie, the diameter of the through-hole 21) gradually decreases as it leaves the upper opening 22, and the upper opening 22 and the lower opening 23 The predetermined position in the up-down direction becomes smaller than the diameter of the substrate 9. In the upper side than the predetermined position, the diameter of the through hole 21 is larger than the diameter of the substrate 9. In the lower side than the predetermined position, the diameter of the through hole 21 is smaller than the diameter of the substrate 9. In addition, in the vicinity of the lower opening 23, the diameter of the through hole 21 is slightly constant in the vertical direction, and is smaller than the diameter of the substrate 9. As shown in FIG. 1, the first holding portion 2 makes the inner peripheral surface 24 of the through hole 21 contact the outer edge portion of the substrate 9 from below and holds the substrate 9 in a slightly horizontal state. The outer edge portion of the substrate 9 is in contact with the inner peripheral surface 24 of the first holding portion 2 over the entire circumference.

The second holding portion 31 is located below the through hole 21 of the first holding portion 2 and below the substrate 9. The second holding portion 31 includes a chuck portion 311 and a support portion 312. The jig portion 311 is a slightly circular plate-shaped portion with the center axis J1 as the center. The diameter of the clamp portion 311 is smaller than the minimum diameter of the through hole 21 of the first holding portion 2 (the diameter of the lower opening 23 in the example shown in FIG. 1) and the diameter of the substrate 9. A vacuum clamp mechanism (not shown) capable of sucking and holding the lower surface of the substrate 9 is provided in the clamp portion 311. The support portion 312 is connected to the central portion of the lower surface of the clamp portion 311 and is a substantially cylindrical portion for supporting the clamp portion 311 from below.

The holding portion moving mechanism 32 is a mechanism for moving the second holding portion 31 in the vertical direction. The holding unit moving mechanism 32 is arranged, for example, in a second holding Under the part 31. The second holding portion 31 is moved upward from the retracted position shown in FIG. 1 by the holding portion moving mechanism 32, thereby contacting the lower surface 92 of the substrate 9 held by the first holding portion 2 in a horizontal state, and from below Side adsorption holding substrate 9. Next, as shown in FIG. 2, by the holding portion moving mechanism 32, the second holding portion 31 is further moved upward through the through hole 21, whereby the substrate 9 is transferred from the first holding portion 2 to the second holding portion 31. Together with the second holding portion 31, it moves upwards above the first holding portion 2.

The rotation mechanism 33 is a mechanism for rotating the second holding portion 31 with the central axis J1 as a center. The rotation mechanism 33 is arranged below the second holding portion 31, for example. As shown in FIG. 2, the rotation mechanism 33 rotates the second holding portion 31 and the substrate 9 in a state in which the substrate 9 has moved upward from the first holding portion 2. Specifically, the rotation mechanism 33 rotates the second holding portion 31 above the upper end of the through hole 21 of the first holding portion 2.

The processing liquid supply unit 4 supplies a processing liquid to the upper surface 91 of the substrate 9. In the examples shown in FIGS. 1 and 2, the processing liquid supply unit 4 is provided with a nozzle 41 that is arranged above the central portion of the substrate 9. The nozzle 41 is connected to a processing liquid supply source (not shown), and ejects the processing liquid from the nozzle 41 toward the upper surface 91 of the substrate 9. In the substrate processing apparatus 1, a plurality of processing liquids are sequentially supplied from the nozzle 41 to the substrate 9. The nozzle 41 includes a plurality of nozzle elements, each of which corresponds to a plurality of processing liquids. Alternatively, a plurality of ejection ports corresponding to a plurality of treatment liquids may be provided at the lower end portion of the nozzle 41.

The upper liquid contacting portion 5 is disposed outside the radial direction (hereinafter referred to simply as the “radial direction”) with the center axis J1 as the center than the second holding portion 31 and the substrate 9, and surrounds the second holding portion 31 throughout the entire circumference And around the substrate 9. The upper liquid contacting portion 5 faces the substrate 9 held by the second holding portion 31 in the radial direction on the upper side than the first holding portion 2. The upper liquid contact portion 5 receives the processing liquid scattered from the substrate 9 that rotates together with the second holding portion 31 toward the surroundings.

The upper liquid contact portion 5 includes a first upper liquid contact portion 51, a second upper liquid contact portion 52, and an external liquid discharge portion 53. The first upper liquid contact portion 51 is a substantially cylindrical portion with the central axis J1 as the center. The first upper liquid contacting portion 51 is continued to the first holding portion 2 and protrudes upward from the upper end portion of the first holding portion 2. The inner peripheral surface 511 of the first upper liquid contact portion 51 is, for example, a curved surface that is convexly curved toward the outside in the radial direction over the entire circumference in a circumferential direction with the center axis J1 as the center (hereinafter referred to as the “circumferential direction”). The lower end of the inner peripheral surface 511 of the first upper liquid contact portion 51 is continued to the upper end of the inner peripheral surface 24 of the first holding portion 2.

The second upper liquid contact portion 52 is a substantially cylindrical member having the central axis J1 as a center. The second upper liquid contact portion 52 is disposed on the outer side in the radial direction than the first upper liquid contact portion 51, and surrounds the periphery of the substrate 9 and the first upper liquid contact portion 51 over the entire circumference. The upper end portion of the second upper liquid contact portion 52 extends above the upper end portion of the first upper liquid contact portion 51. The second upper liquid-receiving portion 52 is provided with a substantially cylindrical side wall portion with the central axis J1 as the center, and a top cover portion extending radially inward from the upper end portion of the side wall portion.该 顶盖 部 The top cover It may be an inclined portion that goes upward as it goes toward the inside in the radial direction. The processing liquid received by the second upper liquid contacting portion 52 is discharged to the outside of the casing 11 through the external liquid discharging portion 53.

As shown in FIG. 1, the lower liquid contacting portion 6 is disposed on the inner side in the radial direction from the first holding portion 2 and on the outer side in the radial direction than the second holding portion 31, and surrounds the periphery of the second holding portion 31 over the entire circumference. The lower liquid contacting portion 6 is disposed below the through hole 21 of the first holding portion 2 and is disposed below the substrate 9 held by the first holding portion 2. The lower liquid contact section 6 includes a lower liquid contact block 61 and a lower liquid discharge section 62. The lower liquid contact block 61 is a slightly cylindrical portion with the central axis J1 as the center. The lower liquid contacting block 61 is located on the lower side than the substrate 9 held by the first holding portion 2, and faces the lower surface 92 of the substrate 9 in the vertical direction. The upper end of the lower liquid contact block 61 is separated from the lower surface 92 of the substrate 9 to the lower side.

The outer peripheral surface 63 of the lower liquid-receiving block 61 is an inclined surface that faces toward the outside in the radial direction as it goes downward from the upper end of the lower liquid-receiving block 61. The outer peripheral surface 63 of the lower liquid-receiving block 61 does not contact the inner peripheral surface 24 of the first holding portion 2, but faces the inner peripheral surface 24 in the radial direction. The lower end of the inner peripheral surface 24 of the first holding portion 2 is located between the upper end and the lower end of the outer peripheral surface 63 of the lower wetted block 61. The processing liquid flowing downward from the gap between the first holding portion 2 and the lower liquid-receiving block 61 is discharged to the outside of the housing 11 through the lower liquid discharge portion 62.

The gas ejection section 73 ejects gas from below toward the outer edge portion of the substrate 9 held by the first holding section 2. In the example shown in FIG. 1, the gas injection unit 73 is provided in the lower liquid-contacting block 61 and injects gas from the outer peripheral surface 63 of the lower liquid-contacting block 61 over the entire periphery of the outer edge of the substrate 9. The gas ejection portion 73 does not necessarily need to be provided in the lower liquid-receiving block 61, and may be provided, for example, below the portion of the inner peripheral surface 24 of the first holding portion 2 that contacts the outer edge portion of the substrate 9, and from below A gas is sprayed toward the outer edge portion of the substrate 9. The gas system ejected from the gas injection unit 73 is, for example, an inert gas such as nitrogen (N ₂ ) gas. The gas from the gas injection unit 73 is not limited to an inert gas, and may be changed to various gases.

The heating section 72 shown in FIG. 4 described later heats the substrate 9 held by the first holding section 2. The heating section 72 is, for example, an electric heating heater disposed above the first holding section 2 and the second holding section 31. The heating portion 72 is retracted from the upper side of the first holding portion 2 and the second holding portion 31 to the side in a state where the substrate 9 is not used for heating. Therefore, the illustration of the heating section 72 is omitted in FIGS. 1 and 2 and the like. The structure and arrangement of the heating section 72 may be variously changed. For example, the heating section 72 may be a light irradiation section for irradiating the substrate 9 with light and heating the substrate 9.

The washing section 71 shown in FIGS. 1 and 2 supplies the washing liquid to the lower liquid-receiving section 6 and cleans the lower liquid-receiving section 6. In the example shown in FIG. 1, the washing section 71 is provided in a portion of the first holding section 2 that faces the outer peripheral surface 63 of the lower liquid-receiving block 61 in the radial direction. The cleaning unit 71 ejects the cleaning liquid toward the outer peripheral surface 63 of the lower liquid-receiving block 61. The cleaning liquid sprayed from the cleaning section 71 is supplied to It covers the entire circumference of the outer peripheral surface 63 of the lower liquid-receiving block 61. The cleaning section 71 does not necessarily need to be provided in the first holding section 2, and may be disposed in another place.

Next, an example of the processing flow of the substrate 9 for which the substrate processing apparatus 1 is provided will be described with reference to FIG. 3. 4 to 6 are longitudinal cross-sectional views of the substrate processing apparatus 1 during processing of the substrate 9. As shown in FIG. 2, when the substrate 9 is processed by the substrate processing apparatus 1, the substrate 9 is first held in a horizontal state by the second holding portion 31 (step S11). The substrate 9 held by the second holding portion 31 is located on the upper side than the first holding portion 2 and the first upper liquid contact portion 51, and faces the second upper liquid contact portion 52 in the radial direction.

Next, the rotation of the second holding portion 31 and the substrate 9 that the rotation mechanism 33 starts is started (step S12). Next, a catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the substrate 9 in rotation (step S13). The catalyst solution is a solution containing a catalyst (for example, an ion of a heavy metal such as palladium (Pd)) which is favorably used for electroless plating described later. In step S13, for example, a liquid column-shaped catalyst solution is ejected from the nozzle 41 toward the central portion of the substrate 9.

The catalyst solution supplied to the central portion of the substrate 9 is moved from the central portion of the substrate 9 to the outer edge portion by centrifugal force, and is applied to the entire surface of the upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge portion of the substrate 9 is scattered toward the surroundings by centrifugal force, and is caught by the second upper liquid contacting portion 52 of the upper liquid contacting portion 5. The catalyst solution caught by the second upper liquid contacting portion 52 is discharged to the outside of the casing 11 through the external liquid discharging portion 53. The discharged catalyst solution can be returned, for example, Recycling and recycling can also be discarded. After the catalyst solution is supplied to the substrate 9 (that is, the catalyst application process) for a predetermined time, the catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9.

When the supply of the catalyst solution is stopped and the catalyst application process is terminated, the first cleaning liquid is supplied from the processing liquid supply unit 4 to the upper surface 91 of the substrate 9 in rotation (step S14). The first cleaning liquid is, for example, pure water. In step S14, for example, a mist (i.e., a plurality of minute droplets that expands widely and moves downward at a low speed) is sprayed from the nozzle 41 and supplied to the substrate 9 Upper surface 91. The first cleaning liquid supplied to the upper surface 91 of the substrate 9 is expanded radially outward by centrifugal force, thereby removing the catalyst solution from the substrate 9. The first cleaning liquid scattered from the substrate 9 toward the periphery is caught by the second upper liquid contacting portion 52 of the upper liquid contacting portion 5 and is discharged to the outside of the casing 11 through the outer liquid draining portion 53. Preferably, the first cleaning liquid received by the second upper liquid-receiving portion 52 is discarded via a path different from the path of the catalyst solution discharge in step S13. Thereby, the recovery efficiency of the catalyst solution can be improved.

When the supply of the first cleaning liquid (that is, the first cleaning process) to the substrate 9 is performed for a predetermined time, the supply of the first cleaning liquid is stopped. In addition, the rotation of the substrate 9 and the second holding portion 31 that the rotating mechanism 33 is also stopped (step S15).

Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 contacts the inner peripheral surface 24 of the first holding portion 2. As shown in FIG. 1, the second holding portion 31 moves further downward, It leaves downward from the lower surface 92 of the substrate 9. Thereby, the substrate 9 is received from the second holding portion 31 to the first holding portion 2 and is held in a horizontal state by the first holding portion 2 below the upper end of the through hole 21 (step S16).

When the substrate 9 is held by the first holding portion 2, gas is started to be ejected from the gas injection portion 73 toward the outer edge portion of the substrate 9 held by the first holding portion 2. Next, a plating liquid is supplied from the processing liquid supply unit 4 to the upper surface 91 of the substrate 9 (step S17). The plating solution contains a heavy metal (for example, nickel (Ni), copper (Cu), cobalt (Co), cobalt tungsten boron (CoWB), gold (Au), or silver ( Ag)) ions and reducing agents. In step S17, for example, a liquid columnar plating solution is ejected from the nozzle 41 toward the central portion of the substrate 9. The plating solution supplied to the center portion of the substrate 9 is spread outward in the radial direction, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. An initial nucleus of the metal contained in the plating solution is deposited on the upper surface 91 of the substrate 9 covered with the plating solution.

As shown in FIG. 4, the plating liquid supplied from the processing liquid supply unit 4 is stored in a space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding portion 2 and the inner peripheral surface 24 of the through hole 21. (Hereinafter referred to as "storage space 20"). In other words, the storage space 20 is a space above the upper surface 91 of the substrate 9 in the through hole 21. As described above, in the substrate processing apparatus 1, since the gas is sprayed from below toward the outer edge portion of the substrate 9 held by the first holding portion 2, even the outer edge portion of the substrate 9 and the inner peripheral surface of the through hole 21 In the case where there is a gap in a part of the circumferential direction between 24, it is possible to Prevent or suppress the plating solution from leaking downward from the gap.

When the plating solution is stored in the storage space 20 to a predetermined depth, the supply of the plating solution from the nozzle 41 is temporarily stopped. The plating solution stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 (ie, the distance in the up-down direction between the liquid surface of the plating solution and the upper surface 91 of the substrate 9) is slightly uniform throughout the entire surface of the substrate 9. The depth of the plating solution in the storage space 20 is greater than the liquid film of the plating solution that can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in a state where the outer edge portion is not in contact with other members. (Hereinafter referred to as "liquid film by surface tension") has a large thickness. In detail, the depth of the plating solution in the storage space 20 is greater than the thickness of the liquid film by the surface tension in the outer edge portion of the substrate 9 and is greater than the liquid by the surface tension in the center portion of the substrate 9 The thickness of the film is also large.

The upper surface 91 of the substrate 9 is coated with the plating solution stored in the storage space 20 for a predetermined time, and the metal system contained in the plating solution is deposited on the upper surface 91 of the substrate 9 (specifically, formed on the upper surface 91). On the catalyst layer), and a layer of the metal is formed on the substrate 9. In the substrate processing apparatus 1, while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20, the substrate 9 is heated by the heating unit 72. Thereby, the above-mentioned metal is promoted to be deposited on the upper surface 91 of the substrate 9.

Next, the second holding portion 31 faces upward by the holding portion moving mechanism 32 The side moves and sucks and holds the lower surface 92 of the substrate 9. In addition, the gas injection unit 73 stops injecting gas. Next, as shown in FIG. 5, the second holding portion 31 moves further upward, and the substrate 9 moves away from the first holding portion 2 to the top. Thereby, the substrate 9 is transferred from the first holding portion 2 to the second holding portion 31 and is held in a horizontal state by the second holding portion 31 (step S18). The plating liquid stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2, and is passed through the lower liquid-receiving area of the lower liquid-receiving portion 6. Block 61 catches. The plating liquid received by the lower liquid contact portion 6 moves downward on the outer peripheral surface 63 of the lower liquid contact block 61 and is discharged to the outside of the casing 11 through the lower liquid discharge portion 62.

Next, as shown in FIG. 6, when the substrate 9 is disposed at the same position as the vertical direction of the first upper liquid contact portion 51, the rotation of the substrate 9 and the second holding portion 31 is started by the rotation mechanism 33 (step S19). The rotation speed of the substrate 9 in step S19 is, for example, 300 rpm to 1000 rpm. Next, a liquid columnar plating solution is started to be ejected from the nozzle 41 toward the center of the upper surface 91 of the substrate 9. The plating solution supplied to the center portion of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force and is supplied to the entire surface of the upper surface 91 of the substrate 9. Thereby, the upper surface 91 of the substrate 9 is subjected to an electroless plating process (hereinafter referred to simply as "plating process") (step S20).

In the substrate processing apparatus 1, the plating solution may be continuously supplied from the processing solution supply unit 4 to the substrate 9 during steps S18 and S19. In addition, in the same manner as in the plating process in step S17, it is also possible to proceed in step S20. During the plating process of the row substrate 9, the substrate 9 is heated by the heating unit 72 (see FIG. 4) to promote the plating process.

The plating solution that has reached the outer edge portion of the rotating substrate 9 is scattered around by centrifugal force, and is received by the first upper liquid contact portion 51 that faces the substrate 9 in the radial direction. The plating liquid received by the first upper liquid contacting portion 51 moves on the inner peripheral surface 511 of the first upper liquid contacting portion 51 and the inner peripheral surface 24 of the first holding portion 2 and flows downward, and is contacted with the lower liquid. The lower liquid-receiving block 61 of the section 6 catches. The plating liquid received by the lower liquid contact portion 6 is discharged to the outside of the casing 11 through the lower liquid discharge portion 62. The discharged plating solution can be recovered and reused, or it can be discarded. The substrate 9 is supplied with a plating solution (that is, a plating process) for a predetermined time, whereby the upper surface 91 of the substrate 9 is plated with a metal.

In the substrate processing apparatus 1 illustrated in FIG. 1, the plating liquid discharged to the outside of the casing 11 is recovered and reused for processing the substrate 9. FIG. 7 is a diagram showing the configuration of a plating solution unit 8 connected to the substrate processing apparatus 1. The plating solution unit 8 collects the plating solution discharged from the housing 11 of the substrate processing apparatus 1 and supplies the plating solution to the nozzle 41 of the substrate processing apparatus 1. The plating liquid unit 8 is a part of the processing liquid supply source. The plating solution unit 8 may be a part of the substrate processing apparatus 1.

The plating solution unit 8 includes a plating solution tank 81, a supply flow path 82, a recovery flow path 83, and a circulation flow path 84. The plating solution tank 81 is a storage tank for storing a plating solution. The supply channel 82 connects the plating bath 81 and the substrate processing. Nozzle 41 of the device 1. The plating solution in the plating solution tank 81 is supplied to the nozzle 41 through the supply flow path 82, and is ejected from the nozzle 41 toward the upper surface 91 of the substrate 9. When the plating solution in the plating solution tank 81 is reduced to less than a predetermined amount, the plating solution is replenished from the plating solution supply source (not shown) to the plating solution tank 81.

The circulation flow path 84 branched from the supply flow path 82 is connected to the plating liquid tank 81. While the discharge of the plating solution from the nozzle 41 is stopped, the plating solution sent from the plating solution tank 81 to the supply flow path 82 is returned to the plating solution tank 81 through the circulation flow path 84. By circulating the plating solution using the circulation flow path 84, the uniformity of the composition and temperature of the plating solution stored in the plating solution tank 81 can be improved.

The recovery flow path 83 connects the plating liquid tank 81 and the lower liquid discharge portion 62 of the substrate processing apparatus 1. In detail, the recovery flow path 83 is connected to the lower drain part 62 via the well part 45 of the substrate processing apparatus 1. The plating liquid discharged from the lower drain portion 62 to the outside of the casing 11 is guided to the plating liquid tank 81 through the well portion 45 and the recovery flow path 83 and is recovered to the plating liquid tank 81. The recovered plating solution is supplied to the nozzle 41 again through the supply flow path 82.

FIG. 8 is a longitudinal sectional view showing the structure of the well portion 45. The well portion 45 includes a well groove 451 and a partition wall 452. The well tank 451 is a substantially cylindrical sealed container extending in the vertical direction, and is filled with a plating solution. The partition wall 452 is provided inside the well groove 451. The partition wall 452 extends downward from the upper end of the well groove 451. The lower end of the partition wall 452 is spaced upward from the lower end of the well groove 451.

The partition wall 452 divides the internal space of the well groove 451 into two spaces from the upper end to the lower portion. In the following description, a space extending upward in the left side of the partition wall 452 in FIG. 8 will be referred to as a "first flow path 454". The space extending in the vertical direction on the right side of the partition wall 452 in FIG. 8 is referred to as a "second flow path 455". A lower drain portion 62 is connected to the upper end of the first flow path 454. The lower part of the first flow path 454 is connected to the lower part of the second flow path 455 below the partition wall 452. The lower part of the first flow path 454 is closer to the inclined flow path of the second flow path 455 as it goes downward. A recovery flow path 83 of the plating liquid unit 8 is connected to the upper end of the second flow path 455.

A substantially cylindrical recessed portion 453 is provided at a lower end portion of the well groove 451 and extends in a vertical direction. The recessed portion 453 is positioned below the first flow path 454 and the second flow path 455. The recessed portion 453 protrudes downward from a portion where the lower portion of the first flow path 454 and the lower portion of the second flow path 455 in the well groove 451 continue. In the example shown in FIG. 8, the recessed portion 453 is located vertically below the second flow path 455. The recessed portion 453 is connected to a lower portion of the first flow path 454 and a lower portion of the second flow path 455. The boundary portion between the recessed portion 453 and the inclined flow path at the lower portion of the first flow path 454 is a stepped portion bent from the inclined flow path to the vertical downward direction.

In the substrate processing apparatus 1, the plating liquid discharged to the outside of the housing 11 (see FIG. 7) through the lower liquid discharge portion 62 flows from the upper end of the first flow path 454 of the well 451. The plating solution flows downward in the first flow path 454, It is reversed below the partition wall 452 and above the recessed portion 453, and flows upward in the second flow path 455. The plating liquid reaching the upper end of the second flow path 455 is guided to the plating liquid tank 81 (see FIG. 7) through the recovery flow path 83 and is stored in the plating liquid tank 81. In FIG. 8, the flow of the plating solution in the well 451 is shown by a thin arrow (the same is true in FIG. 9).

In the substrate processing apparatus 1, there is a possibility that a part of a catalyst (for example, palladium) is peeled off from the substrate 9 during the plating process of the substrate 9 and flows into the lower liquid contact portion 6. When the catalyst flows into the recovery flow path 83, an electroless plating reaction occurs in the recovery flow path 83 and / or the plating solution tank 81, thereby precipitating metals in the plating solution and blocking the flow path. Possibility.

As described above, in the substrate processing apparatus 1, the well portion 45 is provided between the lower drain portion 62 and the recovery flow path 83, thereby preventing or suppressing a catalyst such as palladium peeling from the substrate 9 and the electroless plating The metal produced by the overburden reaction enters the recovery flow path 83. Specifically, the catalyst or the metal flowing into the well 451 together with the plating solution (hereinafter collectively referred to as “entering heavy metals”) has a larger specific gravity than the plating solution. The flow of the coating liquid is separated and settles into the lower recess 453 provided below the flow path of the plating liquid. The stepped portion and the like prevent the heavy metal entering the recessed portion 453 from returning to the first flow path 454 and the second flow path 455. Therefore, it is possible to prevent or suppress the entry of heavy metals from rising in the second flow path 455 and entering the recovery flow path 83.

The entering heavy metal remaining in the recessed portion 453 is removed from the well tank 451 by supplying an acid cleaning solution (for example, aqua regia or nitric acid) to the well tank 451 during the maintenance of the substrate processing apparatus 1 or the like. In addition, an exhaust portion is provided in the well groove 451 to remove hydrogen generated during acid cleaning.

FIG. 9 is a longitudinal sectional view showing the structure of another preferred well portion 45a. The well portion 45 a includes a well groove 451 a having a shape different from that of the well groove 451 shown in FIG. 8. In the well groove 451a, the lower the lower part of the second flow path 455 is, the closer it is to the inclined flow path of the first flow path 454. The first flow path 454 extends in the vertical direction, and a recessed portion 453 is provided below the first flow path 454 vertically. In the case where the well portion 45 a is provided instead of the well portion 45, the heavy metal system that has entered the plating solution that has flowed from the lower drain portion 62 into the first flow path 454 into the lower recess portion 453 is set in the same manner as described above. Therefore, it is possible to prevent or suppress the entry of heavy metals from rising in the second flow path 455 and entering the recovery flow path 83.

In the substrate processing apparatus 1 shown in FIG. 6, when the supply of the plating liquid to the substrate 9 is stopped and the plating process is terminated, the second cleaning liquid is supplied from the processing liquid supply unit 4 to the upper surface 91 of the substrate 9 in rotation ( Step S21). The second cleaning liquid is, for example, pure water. In step S21, for example, the second cleaning liquid in a liquid column shape is ejected from the nozzle 41 toward the central portion of the substrate 9. In this case, the physical force imparted to the substrate 9 by the first cleaning liquid when the first cleaning liquid is supplied in step S14 is larger than the second cleaning liquid when the second cleaning liquid is supplied in step S21. The physical force imparted to the substrate 9 is still small. By first The physical force imparted to the substrate 9 by the cleaning liquid refers to a physical force (ie, a mechanical force) imparted from the first cleaning liquid to the substrate 9 when the first cleaning liquid is in contact with the substrate 9, for example, by the first cleaning The collision of the liquid gives an impact force to the substrate 9. The same applies to the physical force given to the substrate 9 by the second cleaning liquid.

The second cleaning liquid supplied to the upper surface 91 of the substrate 9 is expanded radially outward by centrifugal force, whereby the plating liquid system is removed from the substrate 9. The second cleaning liquid scattered from the substrate 9 toward the surroundings is received by the first upper liquid contact portion 51 and is lowered through the inner peripheral surface 511 of the first upper liquid contact portion 51 and the inner peripheral surface 24 of the first holding portion 2. The lower liquid-receiving block 61 of the liquid-receiving portion 6 catches. The second cleaning liquid received by the lower liquid-receiving portion 6 is discharged to the outside of the housing 11 through the lower liquid-removing portion 62. Preferably, the second cleaning liquid received by the lower liquid contacting portion 6 is discarded through a path different from the path of the plating liquid discharge in step S20. This can improve the recovery efficiency of the plating solution. When the supply of the second cleaning liquid (that is, the second cleaning process) to the substrate 9 is performed for a predetermined time, the supply of the second cleaning liquid is stopped.

After that, the rotation speed of the substrate 9 for which the rotation mechanism 33 is increased is increased. Thereby, the second cleaning liquid on the substrate 9 moves outward in the radial direction and is scattered from the substrate 9 outward in the radial direction. The rotation of the substrate 9 is continued for a predetermined time, thereby performing a drying process for removing a liquid such as a second cleaning liquid from the substrate 9 (step S22). When the drying process of the substrate 9 is completed, the rotation mechanism 33 stops rotating the substrate 9 and the second holding portion 31 and ends the processing of the substrate 9 (step S23). In the substrate processing apparatus 1, a plurality of substrates 9 are sequentially The above steps S11 to S23 are performed to thereby sequentially process the plurality of substrates 9.

In the substrate processing apparatus 1, for example, when processing of a predetermined number of substrates 9 is completed, a cleaning process of the apparatus is performed. In this washing process, for example, the washing liquid is ejected from the washing section 71 toward the outer peripheral surface 63 of the lower liquid-receiving block 61 and the lower liquid-receiving section 6 is cleaned. Thereby, processing liquids, such as a plating liquid and a 2nd cleaning liquid, adhering to the lower liquid contact part 6 are removed. In addition, even in the case where a part of the catalyst is peeled off from the substrate 9 and flows into the lower liquid-contacting portion 6 during the plating process of the substrate 9, the catalyst can be removed from the lower liquid-contacting portion 6 by the above-mentioned cleaning process .

As described above, the substrate processing apparatus 1 includes the first holding section 2, the second holding section 31, the holding section moving mechanism 32, the processing liquid supply section 4, and the lower liquid contact section 6. A through hole 21 is provided in the first holding portion 2. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. The diameter of a part of the inner peripheral surface 24 of the through hole 21 is smaller than that of the substrate 9. The first holding portion 2 makes the inner peripheral surface 24 of the through hole 21 contact the outer edge portion of the substrate 9 from below and holds the substrate 9 in a horizontal state. The second holding portion 31 is located below the through hole 21. The holding portion moving mechanism 32 moves the second holding portion 31 upward through the through hole 21, thereby bringing the second holding portion 31 into contact with the lower surface 92 of the substrate 9 and moving from the first holding portion 2 to the second holding portion. Receiving and receiving of substrate 9 of 31. The processing liquid supply unit 4 supplies a processing liquid to the upper surface 91 of the substrate 9. The lower liquid contact portion 6 is located below the through hole 21.

The processing liquid supplied from the processing liquid supply portion 4 is stored below the upper end of the through hole 21 and is surrounded by the upper surface 91 of the substrate 9 held by the first holding portion 2 and the inner peripheral surface 24 of the through hole 21. Storage space 20. Thereby, when the processing liquid is supplied to the substrate 9 and the liquid processing is performed, it is possible to suppress the processing liquid from moving on the upper surface 91 of the substrate 9. As a result, the processing of the upper surface 91 of the substrate 9 on which the processing liquid is made can be performed stably.

In the substrate processing apparatus 1, the substrate 9 is transferred from the first holding portion 2 to the second holding portion 31, whereby the processing liquid of the storage space 20 is directed downward from between the substrate 9 and the inner peripheral surface 24 of the through hole 21. It flows and is caught by the lower liquid contact portion 6. Thereby, compared with the case where the cover part is provided around the 1st holding part, and the processing liquid scattered from a board | substrate is received, the radial direction of the board | substrate processing apparatus 1 can be miniaturized. In addition, in a case where the processing liquid is received by the cover portion, since the gap between the cover portion and the first holding portion is small, it is difficult to clean the inner peripheral surface of the cover portion and the like. In contrast, in the substrate processing apparatus 1 described above, the gap between the lower liquid contact portion 6 and the first holding portion 2 can be easily increased (for example, the lower end portion of the first holding portion 2 and the lower liquid contact block 61). Between the radial direction). Therefore, a cleaning liquid can be supplied to a desired part of the lower liquid contact portion 6, and the lower liquid contact portion 6 can be appropriately cleaned. In other words, the substrate processing apparatus 1 can appropriately clean the discharge path of the processing liquid.

The processing liquid stored in the storage space 20 in the substrate processing apparatus 1 is, for example, a plating liquid used in the electroless plating process of the substrate 9. As described above, in the substrate processing apparatus 1, the discharge path of the plating solution can be appropriately performed. Wash off. As a result, it is possible to prevent or suppress an undesirable condition such as metal adhesion in the discharge path.

As described above, the substrate processing apparatus 1 further includes the cleaning section 71 and the cleaning lower liquid-receiving section 6. Thereby, the washing liquid can be supplied from the washing | cleaning part 71 to the desired part of the lower liquid contact part 6. As a result, cleaning of the discharge path of the processing liquid can be appropriately performed by the cleaning section 71.

The substrate processing apparatus 1 further includes a rotation mechanism 33 and an upper liquid contact portion 5. The rotation mechanism 33 rotates the second holding portion 31 above the upper end of the through hole 21. The upper liquid contact portion 5 receives the processing liquid scattered from the substrate 9 that rotates together with the second holding portion 31 toward the surroundings. In this way, a new processing liquid is supplied to the rotating substrate 9 and processed, thereby improving the processing efficiency of the substrate 9. In the above-mentioned example, the plating liquid as the processing liquid is supplied to the substrate 9 in rotation, whereby the efficiency of the plating processing for the substrate 9 can be improved.

In the substrate processing apparatus 1, the upper liquid contact portion 5 is provided with a first upper liquid contact portion 51 that is connected to the first holding portion 2 and protrudes upward from the first holding portion 2. Thereby, when the processing of the substrate 9 is performed by the processing liquid stored in the storage space 20 (step S17), and when the processing of the substrate 9 is performed by supplying the processing liquid to the rotating substrate 9 (step S20), the The discharge path of the processing liquid (plating liquid in the above example) is common. As a result, the structure of the substrate processing apparatus 1 can be simplified.

As described above, the upper liquid contacting unit 5 further includes the second upper liquid contacting unit 52 that receives the processing liquid scattered from the substrate 9 on the outside in the radial direction and above the first upper liquid contacting unit 51. Thereby, the plurality of processing liquids scattered from the substrate 9 can be received by the first upper liquid contact portion 51 and the second upper liquid contact portion 52, respectively. As a result, a plurality of types of processing liquids used for the processing of the substrate 9 in the substrate processing apparatus 1 can be easily separated and recovered or discarded.

FIG. 10 is a longitudinal sectional view showing another preferred substrate processing apparatus 1a. In the substrate processing apparatus 1 a, a first holding portion 2 a having a structure different from that of the first holding portion 2 is provided instead of the first holding portion 2 shown in FIG. 1. The gas injection unit 73 shown in FIG. 1 is omitted. In the first holding portion 2 a, a stepped portion 25 is provided on the inner peripheral surface 24 of the through hole 21. The upper surface 26 of the step portion 25 is a substantially annular surface that is slightly perpendicular to the vertical direction. The outer diameter of the upper surface 26 of the stepped portion 25 is larger than the diameter of the substrate 9. The inner diameter of the upper surface 26 of the stepped portion 25 is smaller than the diameter of the substrate 9. When the substrate 9 is held by the first holding portion 2 a, the outer edge portion of the lower surface 92 of the substrate 9 is in contact with the upper surface 26 of the step portion 25. A suction portion 74 is provided on the first holding portion 2 a, and the suction portion 74 faces the outer edge portion of the substrate 9 that is in contact with the upper surface 26 of the step portion 25. The suction portion 74 is provided on a substantially entire periphery in the circumferential direction, and is used to suck the outer edge portion of the substrate 9. The suction part 74 is, for example, a substantially circular ring shape with the central axis J1 as the center.

As described above, in the substrate processing apparatus 1 a, the first holding portion 2 a is provided with a suction portion 74 that sucks and contacts the inner peripheral surface 24 of the through hole 21. The outer edge portion of the plate 9. Thereby, the processing liquid (plating liquid in the above example) stored in the storage space 20 can be prevented or suppressed from leaking downward from between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the through hole 21. It is preferable that the suction part 74 sucks the said outer edge part of the board | substrate 9 over the whole periphery. This can further prevent or suppress the processing liquid stored in the storage space 20 from leaking downward from between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the through hole 21. In addition, even in a case where the outer edge portion of the substrate 9 is not substantially adsorbed by the suction portion 74, the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the through hole 21 can be reduced by being attracted by the suction portion 74. The gap between them can prevent or suppress the above-mentioned leakage of the processing liquid.

FIG. 11 is a longitudinal sectional view showing another preferred substrate processing apparatus 1b. In the substrate processing apparatus 1b, the upper liquid contact portion 5b is provided with a first upper liquid contact portion 51b in place of the first upper liquid contact portion 51 shown in FIG. 1, and the first upper liquid contact portion 51b is disposed in the first holding portion. The portion 2 is radially outward and is arranged on the radially inner side of the second upper liquid contact portion 52. The first upper liquid contact portion 51b is a substantially cylindrical member having the central axis J1 as a center. The first upper liquid contact portion 51b is separated from the first holding portion 2 toward the outside in the radial direction, and is separated from the second upper liquid contact portion 52 toward the inside in the radial direction.

The upper end portion of the first upper liquid contact portion 51 b is positioned above the upper end portion of the first holding portion 2. The first upper liquid-contacting portion 51b includes a substantially cylindrical side wall portion with the central axis J1 as the center, and a top cover portion extending radially inward from an upper end portion of the side wall portion. The top cover portion may also be more oriented The inner side in the radial direction is more toward the upward inclined portion. The inner peripheral surface 511b of the first upper liquid contact portion 51b is, for example, a substantially cylindrical shape with the central axis J1 as the center. The upper end portion of the second upper liquid contact portion 52 is located above the upper end portion of the first upper liquid contact portion 51b. In the example shown in FIG. 11, the first upper liquid contacting portion 51 b and the second upper liquid contacting portion 52 are fixed to the housing 11 and cannot move in the vertical direction.

In the substrate processing apparatus 1b, for example, in the above-mentioned step S20 (refer to FIG. 3), the substrate 9 is rotated at a position facing the first upper liquid contacting portion 51b in the radial direction. The plating liquid supplied to the rotating substrate 9 is caught by the first upper liquid contacting portion 51 b and is discharged to the outside of the housing 11 via the inner liquid discharging portion 54. The plating liquid discharged through the inner drain unit 54 is, for example, merged with the plating liquid discharged through the lower drain unit 62 and recovered or discarded. In the substrate processing apparatus 1b, the second cleaning liquid supplied to the rotating substrate 9 in step S21 is also caught by the first upper liquid contacting portion 51b.

In the substrate processing apparatus 1b, the radial distance between the substrate 9 and the first upper liquid contact portion 51b is smaller than the radial distance between the substrate 9 and the first upper liquid contact portion 51 shown in FIG. 2. It is large, so that it is possible to reduce the possibility that the processing liquid (that is, the plating liquid or the second cleaning liquid) scattered from the substrate 9 is splashed back from the first upper liquid contact portion 51 b and adheres to the substrate 9. Therefore, it is possible to increase the rotation speed of the substrate 9 and increase the processing efficiency of the substrate 9 in steps S20 and S21.

As shown by a two-dot chain line in FIG. 11, the substrate processing apparatus 1b is provided with An upper liquid-contacting portion moving mechanism 55 is provided, and the first liquid-contacting portion moving mechanism 55 moves the first upper liquid-contacting portion 51b and the second upper liquid-contacting portion 52 independently in the vertical direction, respectively. In steps S13 and S14, when the catalyst solution and the first cleaning solution scattered from the rotating substrate 9 are caught by the second upper liquid contacting portion 52, the first upper liquid contacting portion 51b is lowered and the first upper liquid receiving The top cover portion of the liquid portion 51 b is in contact with the upper end portion of the first holding portion 2. Thereby, the catalyst solution and the first cleaning solution are prevented from entering into the first upper liquid contact portion 51b. In addition, in steps S20 and S21, when the plating liquid and the second cleaning liquid scattered from the rotating substrate 9 are caught by the first upper liquid contact portion 51b, the second upper liquid contact portion 52 descends, and the second The top cover portion of the upper liquid contact portion 52 is in contact with the upper surface of the top cover portion of the first upper liquid contact portion 51b. This prevents or prevents the plating solution and the second cleaning solution from entering the second upper liquid contact portion 52.

Next, a substrate processing apparatus 1c according to a second embodiment of the present invention will be described. The substrate processing apparatus 1c shown in FIG. 12 is provided with a lower liquid contacting portion 6c having a structure different from that of the lower liquid contacting portion 6 instead of the lower liquid contacting portion 6 shown in FIG. In addition, the second upper liquid contact portion 52 is omitted from the upper liquid contact portion 5. In addition, similarly to the substrate processing apparatus 1 a shown in FIG. 10, the gas processing unit 73 is omitted in the substrate processing apparatus 1 c, and a suction unit 74 is provided in the first holding unit 2 c. The suction portion 74 is a suction (preferably suction) outer edge portion of the lower surface 92 of the substrate 9. The inner peripheral surface 24 of the through hole 21 of the first holding portion 2c is provided with a discharge port 42 for discharging the processing liquid. A washing portion 71c is provided on the lower surface of the first holding portion 2c, and the washing portion 71c supplies a washing liquid to the lower liquid contact portion 6c and cleans the lower liquid contact portion 6c. The suction section 74, the cleaning section 71c, and the ejection port 42 are It is set on the whole circumference around the circumference. The suction portion 74, the cleaning portion 71c, and the discharge port 42 are, for example, a substantially circular shape with the center axis J1 as the center. The other structures of the substrate processing apparatus 1 c are similar to those of the substrate processing apparatus 1 shown in FIG. 1. In the following description, the components of the substrate processing apparatus 1 c corresponding to the components of the substrate processing apparatus 1 are assigned the same reference numerals.

The lower liquid contact portion 6 c of the substrate processing apparatus 1 c includes a first lower liquid contact portion 64, a second lower liquid contact portion 65, and a lower liquid contact portion moving mechanism 66. The first lower liquid contact portion 64 and the second lower liquid contact portion 65 are disposed on a lower side than the through hole 21 of the first holding portion 2c. The first lower liquid contact portion 64 and the second lower liquid contact portion 65 are each a substantially cylindrical member with the central axis J1 as the center. The second lower liquid contact portion 65 is disposed radially inward of the first lower liquid contact portion 64. The inner peripheral surface of the first lower liquid contact portion 64 is close to the outer peripheral surface of the second lower liquid contact portion 65. The lower wetted portion moving mechanism 66 moves the first lower wetted portion 64 in the vertical direction.

The inner edge portion 642 of the first lower liquid contact portion 64 is located radially inward of the inner peripheral edge of the lower end portion of the first holding portion 2c, and is adjacent to the inner peripheral edge of the lower end portion of the first holding portion 2c in the radial direction. The parts other than the inner edge portion 642 of the first lower liquid contact portion 64 are located vertically below the step portion 25 of the first holding portion 2c. In the state shown in FIG. 12, the upper surface of the inner edge portion 642 of the first lower wetted portion 64 is located at a position slightly the same as the vertical direction of the lower edge of the inner peripheral surface 24 of the first holding portion 2 c. The outer peripheral edge of the upper end of the inner edge portion 642 of the first lower liquid contact portion 64 is connected to the lower edge of the inner peripheral surface 24 of the first holding portion 2c. Closely sealed. The first lower liquid contacting portion 64 includes a first pocket portion 641, and the first pocket portion 641 is a recessed portion recessed downward from the upper surface. The first bag portion 641 is located vertically below the step portion 25. In the state shown in FIG. 12, the upper opening 643 belonging to the upper end of the first pocket portion 641 is closed by the first holding portion 2 c.

In the state shown in FIG. 12, the upper surface of the second lower liquid contact portion 65 is located at a position that is slightly the same as the upper and lower directions of the upper surface of the inner edge portion 642 of the first lower liquid contact portion 64. The inner peripheral edge of the upper end of the inner edge portion 642 of the first lower liquid contact portion 64 is hermetically sealed from the second lower liquid contact portion 65. The second lower liquid contacting portion 65 is provided with a second pocket portion 651 which is a recessed portion recessed downward from the upper surface.

Next, an example of the processing flow of the substrate 9 for which the substrate processing apparatus 1 c is performed will be described with reference to FIGS. 13A and 13B. 14 to 20 are vertical cross-sectional views of the substrate processing apparatus 1 c during processing of the substrate 9. When the substrate 9 is processed by the substrate processing apparatus 1c, first, as shown in FIG. 14, the substrate 9 is held in a horizontal state by the second holding portion 31 (step S31). The substrate 9 held by the second holding portion 31 is located on the upper side than the first holding portion 2 c and faces the first upper liquid contact portion 51 of the upper liquid contact portion 5 in the radial direction.

Next, the substrate 9 and the second holding portion 31 are rotated by the rotation mechanism 33 (step S32). Next, a catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the substrate 9 in rotation (step S33). In step S33, For example, a liquid cylindrical catalyst solution is ejected from the nozzle 41 toward the center of the substrate 9. The catalyst solution supplied to the central portion of the substrate 9 is moved from the central portion of the substrate 9 to the outer edge portion by centrifugal force, and is applied to the entire surface of the upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge portion of the substrate 9 is scattered toward the surroundings by centrifugal force, and is caught by the first upper liquid contact portion 51.

The catalyst solution held by the first upper wetted portion 51 moves downward on the inner peripheral surface 511 of the first upper wetted portion 51 and the inner peripheral surface 24 of the first holding portion 2c, and is passed through the upper opening 643. The upper side of the first lower wetted portion 64 (specifically, the upper side of the inner edge portion 642 of the first lower wetted portion 64) in the closed state flows into the second bag portion 651 of the second lower wetted portion 65. The processing liquid received by the second bag portion 651 of the second lower liquid-receiving portion 65 is discharged to the outside of the housing 11 through the second lower liquid-receiving portion 68. The discharged catalyst solution can be recovered and reused, or it can be discarded. When the catalyst solvent is supplied to the substrate 9 (that is, the catalyst application process) for a predetermined time, the catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9.

When the supply of the catalyst solution is stopped and the catalyst application process is ended, the rotation mechanism 33 stops rotating the substrate 9 and the second holding portion 31 (step S34). Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 is in contact with the inner peripheral surface 24 of the first holding portion 2c. As shown in FIG. 12, the second holding portion 31 moves downward and is separated from the lower surface 92 of the substrate 9 to the lower side. Thereby, the substrate 9 is transferred from the second holding portion 31 to the first holding portion 2c, and is received below the upper end of the through-hole 21 The first holding portion 2c is held in a horizontal state (step S35). When the substrate 9 is held by the first holding portion 2 c, the outer edge portion of the lower surface 92 of the substrate 9 is attracted and attracted by the suction portion 74.

Next, the first cleaning liquid is ejected from the ejection port 42 of the processing liquid supply section 4 provided in the first holding section 2c shown in FIG. The ejection port 42 is positioned above the upper surface 91 of the substrate 9 held by the first holding portion 2c. The first cleaning liquid ejected from the ejection port 42 flows downward along the inner peripheral surface 24 of the through hole 21 of the first holding portion 2 c and is supplied onto the upper surface 91 of the substrate 9 from the outside in the radial direction. The first cleaning liquid is, for example, pure water.

The first cleaning liquid supplied to the outer edge portion of the substrate 9 expands radially inward, and the upper surface 91 of the substrate 9 is covered with the first cleaning liquid over the entire surface. In other words, the first cleaning liquid is stored in a storage space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding portion 2 c and the inner peripheral surface 24 of the through hole 21. As described above, in the substrate processing apparatus 1c, since the outer edge portion of the lower surface 92 of the substrate 9 held by the first holding portion 2c is attracted by the attraction portion 74, even when the substrate 9 is deformed such as warping, etc. It is also possible to prevent or suppress the first cleaning liquid from leaking downward from between the substrate 9 and the first holding portion 2c.

When the upper surface 91 of the substrate 9 is covered with the first cleaning liquid, the liquid film of the first cleaning liquid on the upper surface 91 of the substrate 9 (that is, stored in the storage space) is started from the nozzle 41 of the processing liquid supply unit 4. 20 of the first cleaning solution) A cleaning solution (step S36). In step S36, for example, the first cleaning liquid in a liquid column shape is ejected from the nozzle 41 toward the central portion of the substrate 9. The discharge flow rate of the first cleaning liquid from the nozzle 41 is, for example, larger than the discharge flow rate of the first cleaning liquid from the discharge port 42. Since the upper surface 91 of the substrate 9 is covered with the first cleaning liquid in step S36, the first cleaning liquid from the nozzle 41 does not directly collide with the upper surface 91 of the substrate 9, but passes through the first The liquid film of the cleaning liquid is supplied indirectly. When the supply of the first cleaning liquid from the nozzle 41 is performed, the supply of the first cleaning liquid from the discharge port 42 may be stopped.

As shown in FIG. 15, when the first cleaning liquid is stored in the storage space 20 to a predetermined depth, the supply of the first cleaning liquid from the processing liquid supply unit 4 is stopped. The first cleaning liquid stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the first cleaning liquid stored in the storage space 20 (that is, the distance in the up-down direction between the liquid surface of the first cleaning liquid and the upper surface 91 of the substrate 9) is slightly uniform throughout the entire surface of the substrate 9. The depth of the first cleaning liquid in the storage space 20 is greater than that of the first cleaning liquid in the substrate 9 which can be held on the upper surface 91 of the substrate 9 by surface tension in a state where the outer edge portion is not in contact with other members. The thickness of the liquid film (hereinafter referred to as "the liquid film by surface tension") is also large. In detail, the depth of the first cleaning liquid in the storage space 20 is greater than the thickness of the liquid film by the surface tension in the outer edge portion of the substrate 9, and is greater than the surface tension in the central portion of the substrate 9. The thickness of the liquid film is still large.

The upper surface 91 of the substrate 9 is covered with the first cleaning liquid stored in the storage space 20 for a predetermined time, and the first cleaning process is ended. Next, the second holding portion 31 is moved upward by the holding portion moving mechanism 32 and sucks and holds the lower surface 92 of the substrate 9. In addition, the suction of the substrate 9 by the suction section 74 is cancelled. Next, as shown in FIG. 16, the second holding portion 31 moves further upward, and the substrate 9 moves upward from the first holding portion 2 c. Thereby, the substrate 9 is transferred from the first holding portion 2c to the second holding portion 31, and is held in a horizontal state by the second holding portion 31 (step S37).

The first cleaning liquid stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2c toward the liquid contact portion 6c. This first cleaning liquid flows in the radial direction inside the first lower liquid contact portion 64 in a state where the upper opening 643 is closed by the first holding portion 2c, and flows into the second bag portion of the second lower liquid contact portion 65. 651. The processing liquid received by the second bag portion 651 of the second lower liquid-receiving portion 65 is discharged to the outside of the housing 11 through the second lower liquid-receiving portion 68. Thereby, the catalyst solution on the substrate 9 is removed together with the first cleaning solution. Preferably, the first cleaning liquid received by the second lower liquid-receiving portion 65 is discarded via a path different from the path of the catalyst solution discharge in step S33. Thereby, the recovery efficiency of the catalyst solution can be improved.

When the first cleaning liquid flows downward from the substrate 9, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and as shown in FIG. 17, the substrate 9 is received from the second holding portion 31 to the first A holding part 2c is insured The horizontal state is maintained (step S38). Next, the outer edge portion of the lower surface 92 of the substrate 9 is sucked and sucked by the suction portion 74. In addition, the first lower wetted portion 64 is moved downward by the lower wetted portion moving mechanism 66 between the lower end portion of the first holding portion 2c and the second lower wetted portion 65 (that is, the first lower wetted portion) A gap is formed above the inner edge portion 642 of the liquid portion 64. In the state shown in FIG. 17, the upper opening 643 of the first lower wetted portion 64 is opened downward by being separated from the first holding portion 2 c downward.

In addition, in the substrate processing apparatus 1c, the substrate 9 may be raised to the position shown in FIG. 14 between steps S37 and S38 and the substrate 9 may be rotated for a predetermined time, thereby removing the remaining on the substrate 9 First cleaning solution. In this case, the first cleaning liquid system scattered from the substrate 9 to the surroundings is caught by the first upper liquid contacting portion 51, and is on the inner peripheral surface 511 of the first upper liquid contacting portion 51 and the inner periphery of the first holding portion 2c. The surface 24 moves and flows downward, is caught by the second lower liquid contacting portion 65, and is discharged to the outside of the casing 11.

As shown in FIG. 17, in step S39, when the substrate 9 is held by the first holding portion 2c, a plating liquid is supplied from the processing liquid supply portion 4 to the upper surface 91 of the substrate 9 (step S39). In step S39, for example, a liquid columnar plating solution is ejected from the nozzle 41 toward the center of the substrate 9. The plating solution supplied to the center portion of the substrate 9 is spread outward in the radial direction, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. In addition, the plating solution may be supplied onto the substrate 9 from the ejection port 42 of the processing solution supply unit 4.

As shown in FIG. 18, the plating liquid supplied from the processing liquid supply unit 4 is stored in the storage space 20. When the plating liquid is stored in the storage space 20 to a predetermined depth, the supply of the plating liquid from the processing liquid supply unit 4 is stopped. The plating solution stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 is slightly uniform throughout the entire circumference of the substrate 9. As described above, the depth of the plating solution in the storage space 20 is higher than that of the plating on the substrate 9 which can be held on the upper surface 91 of the substrate 9 by surface tension in a state where the outer edge portion is not in contact with other members. The thickness of the liquid-covered liquid film (that is, the liquid film with surface tension) is also large.

The upper surface 91 of the substrate 9 is coated with the plating solution stored in the storage space 20 for a predetermined time, and the metal system contained in the plating solution is deposited on the upper surface 91 of the substrate 9 (specifically, formed on the upper surface 91). On the catalyst layer), and a layer of the metal is formed on the substrate 9. In the substrate processing apparatus 1 c, while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20, the substrate 9 is heated by the heating unit 72. Thereby, the above-mentioned metal is promoted to be deposited on the upper surface 91 of the substrate 9.

Next, the second holding portion 31 is moved upward by the holding portion moving mechanism 32 and sucks and holds the lower surface 92 of the substrate 9. In addition, the suction of the substrate 9 by the suction section 74 is cancelled. Next, as shown in FIG. 19, the second holding portion 31 moves further upward, and the substrate 9 moves away from the first holding portion 2c to the upper side. Thereby, the substrate 9 is transferred from the first holding portion 2c to the second holding portion 31, and is held in a horizontal state by the second holding portion 31 (step S40).

The plating liquid stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2c toward the liquid contact portion 6c. This plating liquid flows downward through a gap between the lower end portion of the first holding portion 2 c and the second lower liquid contact portion 65, and flows into the first bag portion 641 of the first lower liquid contact portion 64. The plating liquid received by the first lower liquid contact portion 64 is discharged to the outside of the casing 11 through the first lower liquid discharge portion 67.

Next, as shown in FIG. 20, when the substrate 9 is disposed at the same position as the vertical direction of the first upper liquid contacting portion 51, the rotation of the substrate 9 and the second holding portion 31 is started by the rotation mechanism 33 (step S41). The rotation speed of the substrate 9 in step S41 is, for example, 300 rpm to 1000 rpm. The plating solution sprayed from the nozzle 41 toward the center of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force and is supplied to the entire surface of the upper surface 91 of the substrate 9. Thereby, the upper surface 91 of the substrate 9 is subjected to a plating process (step 42).

In the substrate processing apparatus 1c, the plating liquid may be continuously supplied from the nozzle 41 to the substrate 9 during steps S40 and S41. Further, as in the plating process in step S39, the substrate 9 may be heated by the heating unit 72 (see FIG. 18) during the plating process of the substrate 9 in step S42 to promote the plating process.

The plating solution reaching the outer edge portion of the substrate 9 is caused to fly around by centrifugal force. It is scattered and caught by the first upper liquid-contacting portion 51 which is opposed to the substrate 9 in the radial direction. The plating liquid received by the first upper liquid contact portion 51 moves and flows downward on the inner peripheral surface 511 of the first upper liquid contact portion 51 and the inner peripheral surface 24 of the first holding portion 2c, and flows into the first The first bag portion 641 of the lower wetted portion 64. The plating liquid received by the first lower liquid contact portion 64 is discharged to the outside of the casing 11 through the first lower liquid discharge portion 67. The discharged plating solution can be recovered and reused, or it can be discarded. The substrate 9 is supplied with a plating solution (that is, a plating process) for a predetermined time, whereby the upper surface 91 of the substrate 9 is plated with a metal.

When the supply of the plating solution is stopped and the plating process is terminated, the second cleaning solution is supplied from the nozzle 41 to the upper surface 91 of the substrate 9 in rotation (step S43). The second cleaning liquid is, for example, pure water. In step S43, for example, the second cleaning liquid in a liquid column shape is ejected from the nozzle 41 toward the central portion of the substrate 9. In this case, when the first cleaning liquid is supplied in step S36, the physical force applied to the substrate 9 by the first cleaning liquid (for example, the physical force applied to the substrate 9 by the collision of the first cleaning liquid) This is smaller than the physical force applied to the substrate 9 by the second cleaning liquid when the second cleaning liquid is supplied in step S43.

The second cleaning liquid supplied to the upper surface 91 of the substrate 9 is expanded radially outward by centrifugal force, whereby the plating liquid system is removed from the substrate 9. The second cleaning liquid scattered from the substrate 9 toward the periphery is caught by the first upper liquid contacting portion 51 and flows into the inner peripheral surface 511 of the first upper liquid contacting portion 51 and the inner peripheral surface 24 of the first holding portion 2c. The first bag portion 641 of the first lower liquid-contacting portion 64. The second cleaning liquid caught by the first lower liquid contacting part 64 passes through the first lower The liquid discharge portion 67 is discharged toward the outside of the casing 11. Preferably, the second cleaning liquid received by the first lower liquid contact portion 64 is discarded via a path different from the path of the plating liquid discharge in step S42. This can improve the recovery efficiency of the plating solution. When the supply of the second cleaning liquid (that is, the second cleaning process) to the substrate 9 is performed for a predetermined time, the supply of the second cleaning liquid is stopped.

After that, the rotation speed of the substrate 9 for which the rotation mechanism 33 is increased is increased. Thereby, the second cleaning liquid on the substrate 9 moves outward in the radial direction and scatters from the outer edge portion of the substrate 9 toward the radial outside. The rotation of the substrate 9 is continued for a predetermined time, thereby performing a drying process for removing a liquid such as a second cleaning liquid from the substrate 9 (step S44). When the drying process of the substrate 9 is completed, the rotation mechanism 33 stops rotating the substrate 9 and the second holding portion 31 and ends the processing for the substrate 9 (step S45). In the substrate processing apparatus 1 c, the above steps S31 to S45 are sequentially performed on the plurality of substrates 9, thereby sequentially processing the plurality of substrates 9.

In the substrate processing apparatus 1c, for example, when the processing of a predetermined number of substrates 9 is completed, the apparatus is cleaned. In this washing process, for example, the washing liquid is ejected from the washing portion 71 c provided on the lower surface of the first holding portion 2 c toward the first lower liquid-receiving portion 64 and the first lower liquid-receiving portion 64 is washed. Thereby, processing liquids, such as a plating liquid and a 2nd cleaning liquid, adhering to the 1st lower liquid contact part 64 are removed. In addition, even when a part of the catalyst is peeled off from the substrate 9 and flows into the first lower liquid contact portion 64 during the plating process of the substrate 9, the cleaning process can be performed from the first lower liquid contact portion 64 as described above. Remove the catalyst.

As described above, as with the substrate processing apparatus 1 described above, the substrate processing apparatus 1c includes the first holding section 2c, the second holding section 31, the holding section moving mechanism 32, the processing liquid supply section 4, and the lower liquid contact section. 6c. A through hole 21 is provided in the first holding portion 2c. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. The diameter of a part of the inner peripheral surface 24 of the through hole 21 is smaller than that of the substrate 9. The first holding portion 2c contacts the inner peripheral surface 24 of the through hole 21 from below to the outer edge portion of the substrate 9 and holds the substrate 9 in a horizontal state. The second holding portion 31 is located below the through hole 21. The holding portion moving mechanism 32 moves the second holding portion 31 upward through the through hole 21, thereby bringing the second holding portion 31 into contact with the lower surface 92 of the substrate 9, and moving from the first holding portion 2c to the second holding portion. Receiving and receiving of substrate 9 of 31. The processing liquid supply unit 4 supplies a processing liquid to the upper surface 91 of the substrate 9. The lower liquid contact portion 6 c is located below the through hole 21.

The processing liquid supplied from the processing liquid supply unit 4 is stored below the upper end of the through hole 21 and is surrounded by the upper surface 91 of the substrate 9 held by the first holding portion 2 c and the inner peripheral surface 24 of the through hole 21. Storage space 20. Thereby, when the processing liquid is supplied to the substrate 9 and the liquid processing is performed, it is possible to suppress the processing liquid from moving on the upper surface 91 of the substrate 9. As a result, the processing of the upper surface 91 of the substrate 9 on which the processing liquid is made can be performed stably.

In the substrate processing apparatus 1 c, the substrate 9 is transferred from the first holding portion 2 c to the second holding portion 31, and the processing liquid in the storage space 20 is transferred from the substrate 9 to the substrate 9. It flows downward with the inner peripheral surface 24 of the through-hole 21 and is caught by the lower liquid contact portion 6c. Thereby, compared with the case where the cover part is provided around the 1st holding part, and the processing liquid scattered from a board | substrate is received, the radial direction of the board | substrate processing apparatus 1c can be miniaturized. In addition, in a case where the processing liquid is received by the cover portion, since the gap between the cover portion and the first holding portion is small, it is difficult to clean the inner peripheral surface of the cover portion and the like. In contrast, in the above-mentioned substrate processing apparatus 1c, the gap between the lower liquid contact portion 6c and the first holding portion 2c can be easily increased (for example, the lower surface of the first holding portion 2c and the first lower liquid contact portion). 64 vertical gap). Therefore, the cleaning liquid can be supplied to a desired portion of the lower liquid contact portion 6c, and the lower liquid contact portion 6c can be appropriately cleaned. In other words, the substrate processing apparatus 1c can appropriately clean the discharge path of the processing liquid.

The processing liquid stored in the storage space 20 in the substrate processing apparatus 1 c is, for example, a plating liquid used in the electroless plating process of the substrate 9. As described above, in the substrate processing apparatus 1c, it is possible to appropriately clean the discharge path of the plating solution. As a result, it is possible to prevent or suppress an undesirable condition such as metal adhesion in the discharge path.

In the substrate processing apparatus 1c, the lower liquid contact portion 6c includes a first lower liquid contact portion 64 and a second lower liquid contact portion 65. The first lower liquid-receiving portion 64 is disposed below the through hole 21. The first lower liquid contacting portion 64 receives the processing liquid flowing downward from between the substrate 9 and the inner peripheral surface 24 of the through hole 21. The second lower liquid contact portion 65 is disposed on the lower side than the through hole 21 on the inner side in the radial direction from the first lower liquid contact portion 64. The second lower liquid contact part 65 is connected to the first lower liquid The upper opening 643 of the portion 64 receives the processing liquid flowing downward from between the substrate 9 and the inner peripheral surface 24 of the through hole 21 in a closed state. Thereby, the processing liquid received by the lower liquid contacting portion 6c can be classified and discharged.

In the substrate processing apparatus 1c, the catalyst solution and the first cleaning liquid may be caught by the first lower liquid contact portion 64 of the lower liquid contact portion 6c, and the plating solution and the second cleaning liquid may be caught by the lower liquid contact portion 6c. The second lower liquid contacting portion 65 catches.

FIG. 21 is a longitudinal sectional view showing another preferred substrate processing apparatus 1d. The substrate processing apparatus 1d is provided with a first holding portion 2d and a lower liquid contact portion 6d having a structure different from that of the first holding portion 2c and the lower liquid contact portion 6c, instead of the first holding portion 2c and the lower liquid contact shown in FIG. 12. Department 6c. In addition, the upper liquid contact portion 5 d includes a first upper liquid contact portion 51 b and a second upper liquid contact portion 52 shown in FIG. 11. The other structures of the substrate processing apparatus 1d are similar to those of the substrate processing apparatus 1c shown in FIG. In the following description, the components of the substrate processing apparatus 1d corresponding to the components of the substrate processing apparatus 1c are assigned the same reference numerals. The processing flow of the substrate 9 in the substrate processing apparatus 1d is almost the same as the processing flow of the substrate 9 in the substrate processing apparatus 1c (step S31 to step S45).

In the first holding portion 2d, the inner peripheral surface 24 of the through-hole 21 includes a ring-shaped mounting surface 27 substantially perpendicular to the central axis J1. A suction portion 74 is provided on the mounting surface 27. In the first holding portion 2d, the outer edge portion of the lower surface 92 of the substrate 9 placed on the mounting surface 27 is attracted by the attracting portion 74. For being adsorbed. In the first holding portion 2 d, the inner peripheral surface 24 of the through hole 21 is directed toward the inner side in the radial direction as it goes downward from the inner peripheral edge of the mounting surface 27. In addition, the first holding portion 2d is provided with an inclined lower surface 28, which is directed downward from the lower end edge of the inner peripheral surface 24 of the through hole 21 toward the outside in the radial direction. The inclined lower surface 28 is located vertically below the mounting surface 27.

Similar to the lower wetted portion 6c shown in FIG. 12, the lower wetted portion 6d includes a first lower wetted portion 64d, a second lower wetted portion 65d, and a lower wetted portion moving mechanism 66d. The first lower liquid contact portion 64d and the second lower liquid contact portion 65d are disposed on a lower side than the through hole 21 of the first holding portion 2d. The first lower liquid contact portion 64d is a substantially cylindrical portion with the central axis J1 as the center. The first lower liquid contact portion 64d is, for example, a member integrally connected to the first holding portion 2d. The second lower liquid contact portion 65d is a substantially cylindrical member having the central axis J1 as a center. The second lower liquid contact portion 65d is disposed radially inward of the first lower liquid contact portion 64d. In the example shown in FIG. 21, the inner edge portion of the first lower liquid contact portion 64d and the outer edge portion of the second lower liquid contact portion 65d overlap in the radial direction, and the inner peripheral surface of the first lower liquid contact portion 64d is It is located inward in the radial direction from the outer peripheral surface of the second lower liquid contact portion 65d. The lower wetted portion moving mechanism 66d moves the second lower wetted portion 65d in the vertical direction.

The first lower liquid contact portion 64d is located vertically below the mounting surface 27 of the first holding portion 2d. The first lower liquid-contacting portion 64d has a first pocket portion 641, which is a recessed portion recessed downward from the upper surface. The second lower liquid contact portion 65d has a second pocket portion 651, and the second pocket portion 651 faces from the upper surface The recessed portion below. The outer edge portion 652 of the second lower liquid contacting portion 65d is located radially outward from the inner peripheral edge of the lower end portion of the first holding portion 2d, and overlaps the inner peripheral edge of the lower end portion of the first holding portion 2d in the vertical direction. In the state shown in FIG. 21, the outer edge portion 652 of the second lower liquid contact portion 65d contacts the inclined lower surface 28 of the first holding portion 2d from the lower side. Thereby, the upper opening in the first pocket portion 641 of the first lower liquid contact portion 64d, which belongs to the upper end, is blocked by the second lower liquid contact portion 65d. The outer edge portion 652 of the second lower liquid contact portion 65d and the inclined lower surface 28 of the first holding portion 2d are hermetically sealed.

In the state shown in FIG. 21, when the processing liquid is supplied onto the upper surface 91 of the substrate 9, the processing liquid is stored in the storage space 20. Thereafter, as shown in FIG. 22, when the second holding portion 31 picks up the substrate 9 from the first holding portion 2d and raises the substrate 9, the processing liquid stored in the storage space 20 is from the outer edge portion of the substrate 9 and The gap between the inner peripheral surfaces 24 of the first holding portion 2d flows downward toward the lower liquid contact portion 6d. This processing liquid flows into the second bag portion 651 of the second lower liquid contact portion 65d. The processing liquid received by the second bag portion 651 is discharged to the outside of the casing 11 through the second lower liquid discharge portion 68. As described above, since the upper opening of the first lower wetted portion 64d is closed, the processing liquid does not flow into the first bag portion 641 of the first lower wetted portion 64d.

On the other hand, as shown in FIG. 23, in a state where the second lower wetted portion 65d has been lowered by the lower wetted portion moving mechanism 66d, the outer edge portion 652 of the second lower wetted portion 65d is held from the first The inclined lower surface 28 of the portion 2d is separated downward. Furthermore, the outer edge portion 652 of the second lower liquid contact portion 65d An upper opening 643 of the first pocket portion 641 of the first lower liquid contact portion 64d is formed between the inclined lower surfaces 28 of the holding portion 2d. In this state, when the processing liquid stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2d toward the liquid contact portion 6d downward, the The processing liquid flows into the first bag portion 641 of the first lower liquid contact portion 64d through the upper opening 643. The processing liquid received by the first bag portion 641 is discharged to the outside of the casing 11 through the first lower liquid discharge portion 67. Since the upper surface of the outer edge portion 652 of the second lower liquid contacting portion 65d is oriented toward the outside in the radial direction, the inclined surface is directed downward, so the processing liquid flows into the first bag portion 641 along the inclined surface without Flowed into the second bag portion 651.

In the substrate processing apparatus 1d shown in FIG. 21, for example, the catalyst solution supplied to the substrate 9 is received by the second upper liquid contact portion 52 of the upper liquid contact portion 5d, and the first cleaning liquid is received by the first upper liquid portion. The wetted portion 51b catches. The plating liquid supplied to the substrate 9 is received by the first lower liquid contact portion 64d of the lower liquid contact portion 6d, and the second cleaning liquid is received by the second lower liquid contact portion 65d. In this way, the structure used to catch each processing liquid that is different for the processing of the substrate 9 is different, whereby the recovery efficiency of the processing liquid (such as the catalyst solution and the plating solution) can be improved. In addition, the structure for receiving each processing liquid in the substrate processing apparatus 1d may be appropriately changed.

Various modifications can be made to the substrate processing in the substrate processing apparatuses 1, 1 a to 1 d and the substrate processing apparatuses 1, 1 a to 1 d.

For example, the catalyst contained in the catalyst solution used in the substrate processing apparatus 1, 1 a to 1 d is not limited to palladium, and the catalyst solution may contain various catalysts other than palladium. In addition, the metal contained in the plating solution is not limited to the above heavy metals, and various metals may be contained in the plating solution. The first cleaning liquid and the second cleaning liquid are not limited to pure water, and may be other types of cleaning liquids.

The substrate processing apparatuses 1, 1 a to 1 d may be provided with a nozzle moving mechanism for moving the nozzle 41 slightly horizontally above the substrate 9, and in the center of the substrate 9 while supplying the processing liquid from the nozzle 41 to the substrate 9 The reciprocating movement of the nozzle 41 is repeated between the upper portion and the upper edge portion.

In the substrate processing apparatus 1 a shown in FIG. 10, not only the outer edge portion of the lower surface 92 of the substrate 9 held by the first holding portion 2 a is attracted by the suction portion 74 but also by the gas ejection portion 73 (see FIG. 1) A gas is sprayed toward the outer edge portion from below. This can further prevent or suppress the processing liquid stored in the storage space 20 from leaking downward from between the substrate 9 and the first holding portion 2a. Similarly, the substrate processing apparatuses 1, 1 b to 1 d may be provided with both a gas injection unit 73 and a suction unit 74.

In the substrate processing apparatus 1, the first holding portion 2 does not necessarily need to be fixed to the casing 11, and for example, it may be movable relative to the casing 11 in an up-down direction or a horizontal direction. The same applies to the substrate processing apparatuses 1a to 1d.

In the substrate processing apparatus 1, the rotation mechanism 33 for rotating the second holding part 31 and the liquid-receiving part 5 on the processing liquid scattered from the rotating substrate 9 may be omitted. The same applies to the substrate processing apparatuses 1a to 1d. In addition, the heating unit 72 for heating the substrate 9 may be omitted in the substrate processing apparatuses 1, 1 a to 1 d.

A filter for trapping heavy metals into the well portion 45 may be provided between the second flow path 455 of the well groove 451 and the recovery flow path 83. In addition, in the well portion 45, a plurality of well grooves 451 may be arranged in series between the lower drain portion 62 and the recovery flow path 83. This makes it possible to further prevent or suppress the entry of heavy metals into the recovery flow path 83.

Alternatively, instead of the well 451, a filter for trapping a catalyst may be provided between the lower drain portion 62 and the recovery flow path 83 in the well portion 45. In this case, in order to prevent the filter from being clogged, the filter needs to be exchanged or washed more frequently. On the other hand, compared with the case where this filter is provided, the above-mentioned substrate processing apparatus 1 provided with the well groove 451 can reduce the maintenance frequency of a structure for trapping heavy metals.

For example, in the above-mentioned step S36, the storage in the first cleaning liquid supplied from the nozzle 41 toward the ejection port 42 provided from the inner peripheral surface 24 of the first holding portion 2c of the substrate processing apparatus 1c along the inner peripheral surface 24 is stored. The first cleaning liquid remaining in the storage space 20 supplies the first cleaning liquid, but the method for supplying the first cleaning liquid may be variously changed. For example, the first supply from the nozzle 41 may be omitted. The cleaning liquid is supplied only from the ejection port 42. Alternatively, instead of providing the ejection port 42 in the first holding portion 2c, the first cleaning liquid may be sprayed from the nozzle 41 toward the inner peripheral surface 24 of the first holding portion 2c, thereby supplying the first cleaning liquid along the inner peripheral surface 24 . Alternatively, as in step S14, the mist-like first cleaning liquid may be supplied from the nozzle 41 to the substrate 9. Moreover, the first cleaning liquid does not necessarily need to be stored in the storage space 20.

In the processing of the substrate 9 in steps S11 to S23, a processing liquid may be supplied to the substrate 9 between steps S11 and S13 and pre-processing (that is, processing performed before the catalyst-imparting processing) may be performed. In the same manner as in the processing of the substrate 9 in steps S31 to S45, the substrate 9 may be pre-processed between steps S31 and S33. In addition, the catalyst solution may be stored in the storage space 20 in step S33, and the substrate 9 may be subjected to a catalyst providing process.

In the above-mentioned example, although the processing of steps S31 to S45 is continuously performed on the substrate 9 in one substrate processing apparatus 1c, the processing may be performed using, for example, two substrate processing apparatuses 1 (see FIG. 1). Specifically, in the first substrate processing apparatus 1, after the catalyst solution is supplied to the substrate 9 and the catalyst providing process is performed, the first cleaning solution is stored in the storage space 20 and the first cleaning process is performed. When the first cleaning process is completed, the substrate 9 is carried into the second substrate processing apparatus 1. After the plating solution is stored in the storage space 20 and subjected to the plating process, the second cleaning solution is supplied to the substrate 9 and the second process Cleaning treatment. In this way, the substrate 9 is processed by the two substrate processing apparatuses 1. In this way, it is not necessary to separately set the discharge destination of the first cleaning liquid and the plating solution stored in the storage space 20 below the substrate 9, so that the device structure can be simplified.

In the substrate processing apparatus 1, various processing liquids other than the above-mentioned processing liquids (catalyst solution, first cleaning liquid, plating liquid, and second cleaning liquid) may be supplied to the substrate 9, and various processings may be performed on the substrate 9. For example, the cleaning liquid may be stored in the storage space 20 and the substrate 9 may be cleaned while the substrate 9 is held by the first holding portion 2. In the case of performing this cleaning treatment, the cleaning liquid stored in the storage space 20 may be vibrated or the like, and bubble-washed. Alternatively, after supplying nitrogen to the storage space 20 while the substrate 9 is held by the first holding portion 2, the treatment liquid that has been subjected to the deoxidizing treatment may be stored in the storage space 20, thereby reducing the The substrate 9 is processed in an oxygen state. The same applies to the substrate processing apparatuses 1a to 1d.

The substrate processing apparatuses 1, 1a to 1d can be used for processing glass substrates used in display devices such as liquid crystal display devices, plasma displays, and FED (field emission display) in addition to semiconductor substrates. . Alternatively, the substrate processing apparatuses 1, 1 a to 1 d can also be used for processing of optical disk substrates, magnetic disk substrates, optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates.

The configurations in the above-described embodiment and each modification can be appropriately combined as long as there is no contradiction.

Although the present invention has been described and illustrated in detail, the above description is merely illustrative and not restrictive. Therefore, as long as it does not depart from the scope of the present invention, there can be many variations and aspects.

Claims (10)

A substrate processing apparatus for processing a substrate and comprising: a first holding portion provided with a through-hole having a diameter of a part of an inner peripheral surface through which an upper portion of the substrate can be opened and passing through the upper portion, so that the through The inner peripheral surface of the hole contacts the outer edge portion of the substrate from below and holds the substrate horizontally; the second holding portion is located below the through hole; the holding portion moving mechanism makes the first through the through hole. The two holding parts are moved to the upper side, thereby bringing the second holding part into contact with the lower surface of the substrate, and receiving and receiving the substrate from the first holding part to the substrate of the second holding part; The processing liquid is supplied to the upper surface of the substrate; and the lower liquid-contacting portion is located below the through hole; the processing liquid supplied from the processing liquid supply portion is stored in a storage space, and the storage space is Surrounded by the upper surface of the substrate and the inner peripheral surface of the through hole, the substrate is protected by the first holding portion below the upper end of the through hole. The substrate is transferred from the first holding portion to the second holding portion, whereby the processing liquid of the storage space flows downward from between the substrate and the inner peripheral surface of the through hole and is lowered by the lower portion; The wetted part catches it. The substrate processing apparatus according to claim 1, further comprising: a cleaning section that cleans the lower liquid contact section. The substrate processing apparatus according to claim 2, further comprising: a rotation mechanism configured to rotate the second holding portion above the upper end of the through hole; and an upper liquid-receiving portion to connect the second holding portion from the first portion. The processing liquid scattered by the two substrates that rotates together around the substrate. The substrate processing apparatus according to claim 3, wherein the liquid contacting portion includes a first liquid contacting portion that is connected to the first holding portion and protrudes upward from the first holding portion. The substrate processing apparatus according to claim 4, wherein the upper liquid contacting section further includes a second upper liquid contacting section, which is connected to the substrate from an outer side in a radial direction and above the first upper liquid contacting section. Scattered treatment fluid. The substrate processing apparatus according to claim 1, further comprising: a rotating mechanism that rotates the second holding portion above the upper end of the through hole; and an upper liquid-receiving portion that is connected between the second holding portion and the first The processing liquid scattered by the two substrates that rotates together around the substrate. The substrate processing apparatus according to claim 6, wherein the liquid contacting portion includes a first liquid contacting portion that is connected to the first holding portion and protrudes upward from the first holding portion. The substrate processing apparatus according to claim 7, wherein the upper liquid-contacting unit further includes: a second upper liquid-contacting unit, The upper liquid-receiving portion also receives the processing liquid scattered from the substrate outside and above the radial direction. The substrate processing apparatus according to any one of claims 1 to 8, wherein the lower liquid-contacting section is provided with a first lower liquid-contacting section disposed on a lower side than the through-hole to catch the slave A processing liquid flowing downward between the substrate and the inner peripheral surface of the through-hole; and a second lower liquid-contacting portion, which is disposed on a lower side than the through-hole in a radial direction from the first lower liquid-contacting portion The inner side is used to catch the processing liquid flowing downward from between the substrate and the inner peripheral surface of the through-hole in a state where an upper opening of the first lower liquid-contacting portion is closed. The substrate processing apparatus according to any one of claims 1 to 8, wherein the processing liquid stored in the storage space is a plating liquid used in the electroless plating treatment of the substrate.