TWI672626B - Electrostatic capacitance sensor - Google Patents

Abstract

[Problem] A capacitive sensor capable of suppressing the stability of conduction and the deterioration of ESD resistance is provided. [Means for Solving] The first connecting portion is provided by electrically connecting two adjacent first transparent electrodes to each other and including an amorphous oxide material; and the second connecting portion is a phase connecting portion The two adjacent second transparent electrodes are electrically connected to each other and include an amorphous oxide-based material, and the first connecting portion and the second connecting portion are observed in a direction orthogonal to the main surface. In the plan view, the first connecting portion is provided with a first connecting surface that is disposed on each of the two adjacent first transparent electrodes, and is disposed so as not to intersect each other. The connection surface is electrically connected to each of the first transparent electrodes, and the second connection portion is provided with a second connection surface respectively disposed on the adjacent two second transparent electrodes. 2 The connection surface is electrically connected to each of the second transparent electrodes.

Description

Electrostatic capacitance sensor

The present invention relates to a capacitive sensor, and more particularly to a capacitive sensor provided with a transparent electrode containing a conductive nanowire.

Patent Document 1 discloses a finger touch type detecting panel which is formed on an transparent glass substrate and is formed with an X electrode and a Y electrode of an indium tin oxide (ITO) layer. In the finger touch type detection panel described in Patent Document 1, a portion where the X electrode and the Y electrode intersect each other is provided. The Y electrode is electrically connected through the opening portion through the conductor film. In this manner, by making the X electrode and the Y electrode intersect each other on the substrate and providing a bridge wiring portion for electrically connecting the Y electrode, the detection panel can be made thinner.

Here, in the market trend, it is desirable to set the shape of the capacitive sensor to a curved surface or to bend the capacitive sensor. Therefore, as a material of the transparent electrode of the electrostatic capacitance sensor, for example, a metal nanowire (conducting nanowire) containing a gold nanowire, a silver nanowire, and a copper nanowire is used. The material of the material). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. SHO 58-166437

[Problems to be solved by the invention]

If a material containing a conductive nanowire is used in the material of the transparent electrode, there is a gap between the transparent electrode which is independent of each other and the bridge wiring portion which is provided at the intersection of the transparent electrodes. The problem that the contact area becomes narrower. In other words, the transparent electrode comprising the material of the conductive nanowire ensures the electrical conductivity between itself and the bridging wiring material by the conductive nanowire exposed at the surface of the transparent electrode, and by itself The gap between the conductive nanowires ensures transparency. Therefore, when the material of the bridge wiring portion is a material containing a conductive nanowire, the contact between the transparent electrode and the bridge wiring portion is a point contact between the strand and the strand. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridging wiring portion is a line between the conductive nanowire or a point and a surface. contact. As a result, when a material containing a conductive nanowire is used for the material of the transparent electrode, the contact area between the transparent electrode and the bridge wiring portion becomes narrow. Therefore, there is a tendency to reduce the stability of conduction.

Further, if an electrostatic discharge (ESD; Electro Static Discharge) occurs and a large current flows at a contact portion between the transparent electrode and the bridge wiring portion, the contact portion is locally heated and blown. In other words, if a material containing a conductive nanowire material is used as the material of the transparent electrode, although the deformation performance of the electrostatic capacitance sensor is improved, on the other hand, the conduction stability and the ESD are improved. The patience is reduced.

The present invention has been made in view of the above problems of the prior art, and an object thereof is to provide a capacitance type sensor capable of suppressing reduction in conduction stability and ESD resistance. [Means to solve the problem]

In order to solve the above problems, the capacitive sensor of the present invention is characterized in that: a substrate is provided with light transmissivity; and a plurality of first transparent electrodes are provided on one of the main faces of the substrate. The detection region is arranged side by side along the first direction, and has translucency, and includes a conductive nanowire; and a plurality of second transparent electrodes are disposed at the detection region along the first direction The second transparent direction is arranged side by side and has a light transmissive property, and includes a conductive nanowire; and the first connecting portion electrically connects the two adjacent first transparent electrodes to each other. And an amorphous oxide-based material; and the second connecting portion electrically connects the two adjacent second transparent electrodes to each other, and includes an amorphous oxide-based material, the first connecting portion and the first connecting portion The two connecting portions are arranged so as not to intersect each other in a plane observation in a direction orthogonal to the main surface, and are provided at the first connecting portion. The first connection surface on the adjacent two first transparent electrodes, the first connection The second connection portion is electrically connected to the first transparent electrode, and the second connection portion is provided with a second connection surface that is disposed on the adjacent two second transparent electrodes, and the second connection surface It is electrically connected to each of the second transparent electrodes.

The first connection surface is provided in the first connection portion, and the second connection surface is provided in the second connection portion, and each connection surface (first connection surface or second connection surface) is disposed to be electrically The transparent electrode (the first transparent electrode and the second transparent electrode) to be connected can expand the contact area between the first transparent electrode and the first connecting portion and the contact area between the second transparent electrode and the second connecting portion, respectively. . Thereby, it is possible to suppress the decrease in conduction stability and ESD tolerance. Further, since the first connecting portion and the second connecting portion are arranged so as not to intersect each other in plan view, the manufacturing process can be simplified as compared with the configuration in which the intersecting portions are formed. .

In the capacitive sensor of the present invention, it is preferable that the region in which the first connecting portion is formed is formed with an insulating layer covering one of the second transparent electrodes in plan view. In the layer, the first connecting portion electrically connecting the two first transparent electrodes is disposed on the insulating layer on the second transparent electrode adjacent to the two first transparent electrodes.

In this way, since the first connecting portion is placed on the second transparent electrode with the insulating layer interposed therebetween, it is easier to obtain a larger area of the first connecting portion in plan view. Therefore, the contact area with the first transparent electrode can be ensured to be wide, and the resistance value of the first connection portion can be lowered. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

In the capacitive sensor of the present invention, it is preferable that the first connecting portion is provided on each of the two first transparent electrodes that are electrically connected. A pattern extending in a direction crossing the first direction.

In this way, since the first connecting portion is provided with a pattern extending in a direction intersecting the first direction on the first transparent electrode, the first connecting portion can be prevented from intersecting the second connecting portion. The pattern of the first joint portion to be laid is shortened. Therefore, the resistance value of the first connecting portion can be lowered, and the decrease in the conduction stability and the ESD resistance can be suppressed. Further, the contact area between the first connecting portion and the first transparent electrode can be widened, that is, the first connecting surface of the first connecting portion can be widened. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

In the capacitive sensor of the present invention, it is preferable that the first connecting portion is provided on each of the two first transparent electrodes that are electrically connected. a pattern extending in the second direction and having a pattern extending along the first direction on the insulating layer of each of the two second transparent electrodes adjacent to the two first transparent electrodes .

In this way, since it is easy to obtain a larger area of the first connecting portion in plan view, the contact area with the first transparent electrode can be ensured to be wide, and the first connection can be made. The resistance value of the part is reduced. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

In the capacitive sensor of the present invention, it is preferable that the insulating layer has a second through hole that faces the second transparent electrode and penetrates the insulating layer up and down, and passes through the second pass. The holes and the adjacent second transparent electrodes are electrically connected by the second connecting portion.

Thereby, the second transparent via is provided in the second via hole, and the adjacent second transparent electrode is electrically connected by the second connection portion. Therefore, it is not adjacent to the second transparent electrode. The pattern shape of the first transparent electrode can be easily connected to the adjacent second transparent electrode by the second connecting portion.

In the electrostatic capacitance sensor of the present invention, it is preferable that the insulating layer is formed by covering one of the first transparent electrodes in a plane view, and is formed to face the first layer at the insulating layer. The transparent electrode penetrates the first through hole of the insulating layer up and down, and the adjacent first transparent electrode is electrically connected by the first connecting portion via the first through hole.

In this way, the first through hole is further provided in addition to the second through hole in the insulating layer, and the first connecting portion and the second connecting portion are disposed on the same insulating layer. The restriction on the shape of the pattern is reduced, whereby the reduction in conduction stability and ESD resistance can be suppressed. Moreover, since it is disposed on the insulating layer which is a flat surface, the pattern of the joint portion can be formed with good precision.

In the capacitive sensor of the present invention, it is preferable that the first transparent electrode and the second transparent electrode are in addition to the first connecting portion and the second connecting portion in plan view. At the region, a pattern layer containing an amorphous oxide-based material is disposed.

In this case, the transparent electrode is formed by the same material (amorphous oxide-based material) as the connecting portion (the first connecting portion and the second connecting portion) and having the same appearance (reflectivity). Since the first transparent electrode and the second transparent electrode are covered, it is possible to make the connection portion difficult to be visually recognized.

In the capacitive sensor of the present invention, it is preferable that the pattern layer is electrically connected to one of the first connection portion and the second connection portion, and is insulated from each other.

According to this configuration, by electrically connecting the pattern layer to one of the connection portions, the contact area between the connection portion and the transparent electrode on which the pattern layer is disposed can be substantially expanded. Thus, it is possible to suppress the decrease in conduction stability and ESD tolerance.

In the capacitive sensor of the present invention, preferably, the first lead-out wiring is provided with a plurality of first transparent electrodes connected by a plurality of first connecting portions. The second connection wiring is electrically connected to the plurality of second transparent electrodes connected by the plurality of second connection portions, and is adjacent to the first transparent electrode and the first lead wiring. A first impedance setting unit including an amorphous oxide material is formed, and an amorphous oxide system is formed between the adjacent second transparent electrode and the second lead wiring. The second impedance setting unit of the material.

By providing the first impedance setting unit and the second impedance setting unit, the pattern area and shape of the first impedance setting unit and the second impedance setting unit can be changed along the first The impedance of the group of the first transparent electrodes in the direction and the impedance of the group of the second transparent electrodes along the second direction coincide with each other. Therefore, it is possible to prevent the current from being concentrated at a single place, and it is possible to suppress the decrease in ESD resistance.

In the electrostatic capacitance sensor of the present invention, it is preferable that the conductive nanowire material is formed from a gold nanowire material, a silver nanowire material, and a copper nanowire material. At least one of the groups selected.

By using an oxide-based material such as ITO or the like in the material of the transparent electrode, the deformation performance of the electrostatic capacitance sensor can be improved, and the resistance at the time of bending can be further improved. Ascending to suppress.

In the capacitance type sensor of the present invention, it is preferable that the amorphous oxide material is made of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO. And at least one selected from the group consisting of amorphous FTOs.

By using, for example, crystalline ITO or the like in the material of the bridge wiring portion, the deformation performance of the capacitance sensor can be improved, and the increase in resistance at the time of bending can be suppressed. In addition, when the conductive nanowire or the like is used for the material of the bridge wiring portion, the invisibility of the bridge wiring portion can be further improved. [Effects of the Invention]

According to the present invention, it is possible to provide an electrostatic capacitance type sensor capable of suppressing a situation in which conduction stability and ESD resistance are lowered.

Hereinafter, a capacitive sensor according to an embodiment of the present invention will be described in detail with reference to the drawings. Fig. 1 is a view showing a configuration of a capacitive sensor 10 according to an embodiment of the present invention, and is a plan view showing an enlarged view of a portion of the detection region 11 thereof. In addition, in FIG. 1, the illustration of the 1st connection part 20 mentioned later is abbreviate|omitted. In addition, FIG. 2(a) is a plan view showing the arrangement of the transparent electrodes 13 and 14 in the region A1 of FIG. 1 (the portion where the first electrode connecting body 13C and the second electrode connecting body 14C which will be described later intersect). Fig. 2(b) is a plan view showing a state in which the insulating layer 30 is provided in the area A1 shown in Fig. 2(a). Fig. 3(a) is a plan view showing a state in which the second connecting portion 21 is further provided in the region A1 shown in Fig. 2(b), and Fig. 3(b) is for Fig. 3(a). A plan view showing a state in which the first connecting portion 20 (hatched portion) is provided in the area A1 shown is shown. Further, the transparent electrode 13 and the transparent electrode 14 shown in FIGS. 1 to 3 represent a conductive region which is partitioned by the insulating region 18. Further, Fig. 4(a) is a cross-sectional view taken along line 4A-4A' of Fig. 3(b), and (b) is a cross-sectional view taken along line 4B-4B' of Fig. 3(b).

Moreover, in each figure, the X-Y-Z coordinate is indicated as a reference coordinate. The Z1-Z2 direction is a direction perpendicular to the plane including the X1-X2 direction and the Y1-Y2 direction, and has a case where the Z1 side is referred to as the upper side and the Z2 side is referred to as the lower side. In the following description, the Y1-Y2 direction is referred to as a first direction, and the X1-X2 direction intersecting in a manner orthogonal to the Y1-Y2 direction is referred to as a second direction, but may be adapted to The specifications of the capacitance sensor are arbitrarily changed. Further, a state in which the Z2 side is observed from the Z1 side along the Z1-Z2 direction is referred to as a plan view.

In the following description, "transparent" and "transparent" refer to a state in which the visible light transmittance is 50% or more (more preferably 80% or more). Further, the haze value is preferably 6% or less. In the present specification, the term "shielding" and "shielding property" means a state in which the visible light transmittance is less than 50% (preferably less than 20%).

First, the configuration of the capacitance sensor 10 of the present embodiment will be described. The capacitive sensor 10 is provided with a substrate 12, a first transparent electrode 13, a second transparent electrode 14, and a first one as shown in FIG. 1 or FIGS. 4(a) and 4(b). The connecting portion 20 and the second connecting portion 21 are provided. As shown in FIGS. 4(a) and 4(b), the first transparent electrode 13 and the second transparent electrode 14 are provided on the surface 12a (main surface) of the substrate 12. As shown in FIG. 1, in the detection region 11 of the substrate 12, the first transparent electrode 13 is disposed in plural in the Y1-Y2 direction in which the first direction is written, and the second transparent electrode 14 is tied. The work is arranged in a plural number in the X1-X2 direction of the second direction. In this manner, since the first transparent electrode 13 and the second transparent electrode 14 are provided on the same surface (the surface 12a of the substrate 12), the thickness of the capacitive sensor 10 can be reduced.

As shown in FIG. 1, the capacitance sensor 10 is provided with the first transparent electrode 13 and the second transparent electrode 14 when viewed from the Z1 side in the Z1-Z2 direction. The detection area 11 and the non-detection area 17 disposed at the outer side thereof. The detection area 11 is an area that can be operated by an operation body such as a finger, and the non-detection area 17 is a frame-shaped area that is positioned on the outer circumference side of the detection area 11.

The first transparent electrode 13 is formed in a rectangular shape in plan view as shown in FIG. 1, and is arranged side by side in the Y1-Y2 direction and the X1-X2 direction. On the other hand, the first transparent electrodes 13 adjacent to each other in the Y1-Y2 direction are electrically connected to each other via the first connecting portion 20 (see FIG. 3(b)), and constitute the first electrode connection. Body 13C. The first electrode connecting body 13C is arranged in plural in the X1-X2 direction with the insulating regions 18 interposed therebetween with a space therebetween.

The second transparent electrode 14 is formed in a rectangular shape in plan view as shown in FIG. 1, and is arranged side by side in the X1-X2 direction and the Y1-Y2 direction. On the other hand, the second transparent electrodes 14 adjacent to each other in the X1-X2 direction are electrically connected to each other via the second connecting portion 21 (see FIG. 3(a)), and constitute a second electrode connection. Body 14C. The second electrode connecting body 14C is arranged in plural in the Y1-Y2 direction with the insulating regions 18 interposed therebetween with a space therebetween. In this manner, by setting the first transparent electrode 13 and the second transparent electrode 14 to a so-called diamond type pattern, the electrodes for detecting the electrostatic capacitance can be arranged with good efficiency on the same plane.

As shown in Fig. 2(b), at the region where the two first transparent electrodes 13 and the two second transparent electrodes 14 are adjacent, they are observed from the Z1 side in the Z1-Z2 direction. In the plan view, an insulating layer 30 covering a portion of the first transparent electrode 13 and a portion of the second transparent electrode 14 is provided. The insulating layer 30 is provided with a pattern in which four patterns 30a, 30b, 30c, and 30d are sequentially connected to each other in a rectangular frame shape in plan view.

The first pattern 30a is formed so as to cover the Y2-side end portion 13a (FIG. 2(a)) of the first transparent electrode 13 on the Y1 side of the two adjacent first transparent electrodes 13 Extending in the X1-X2 direction. The second pattern 30b is an X2 extending from the end portion on the X1 side of the first pattern 30a in the Y1-Y2 direction and the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14 The side end portion 14a (Fig. 2(a)) is exposed to be formed. The third pattern 30c extends in the X1-X2 direction from the Y2 side end portion of the second pattern 30b and covers the Y1 side end portion 13b (Fig. 2(a)) of the first transparent electrode 13 on the Y2 side. The way it was formed. The fourth pattern 30d is formed by connecting the end portions on the X2 side of the first pattern 30a and the third pattern 30c and extending in the Y1-Y2 direction, and exposing the X1 side end portion 14b of the second transparent electrode 14 on the X2 side. The way, is formed. By providing the insulating layer 30 with the four patterns 30a, 30b, 30c, and 30d, the mutually opposing end portions 13a and 13b of the two adjacent first transparent electrodes 13 in the Y1-Y2 direction are The insulating layer 30 is covered with a state in which the mutually opposing end portions 14a and 14b of the two adjacent second transparent electrodes 14 in the X1-X2 direction are exposed. Further, as shown in FIG. 2(b), the insulating layer 30 is formed as a rectangular frame-like pattern having a rectangular opening 30s at the center in plan view.

As shown in FIG. 3(a), the second joint portion is formed in the opening 30s of the insulating layer 30 (refer to FIG. 2(b)) so as not to overlap the insulating layer 30 in plan view. twenty one. The second connecting portion 21 extends in the X1-X2 direction and has a rectangular shape when viewed in plan, and the second connecting surface 21a on the lower surface of both ends in the longitudinal direction is disposed adjacent to each other. Each of the two second transparent electrodes 14 is placed on top of each other (Fig. 4(b)). Thereby, the two adjacent second transparent electrodes 14 are electrically connected via the second connecting portion 21 . Here, as shown in FIG. 3(b) and FIG. 4(a), since the second connecting portion 21 is disposed in the opening 30s of the insulating layer 30, the two connecting portions are not opposed to each other. Any one of the first transparent electrodes 13 is in contact.

As shown in FIG. 3(b), the first connecting portion 20 is formed on the insulating layer 30 in a pattern along the four patterns 30a, 30b, 30c, and 30d. Further, as shown in FIG. 3(b) and FIG. 4(a), the first connecting portion 20 on the first pattern 30a on the Y1 side of the insulating layer 30 extends from the central portion thereof to the Y1 side. The first transparent electrode 13 is formed on the ground, whereby the first transparent electrode 13 on the Y1 side and the first connection portion 20 are electrically connected. Further, the first connecting portion 20 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 is formed. The first transparent electrode 13 on the side and the first connecting portion 20 are electrically connected. In other words, as shown in Fig. 4 (a), the lower side of each of the Y1 side end portion and the Y2 side end portion of the first connecting portion 20 is the first connecting surface 20a and the Y1 - Y2 direction. The two adjacent first transparent electrodes 13 are in contact with each other.

On the other hand, the first connecting portion 20 on the second pattern 30b on the X1 side of the insulating layer 30 and the fourth pattern 30d on the X2 side are only extended to the second transparent electrode 14 and are only matched. Since it is provided on the insulating layer 30, it is not connected to the adjacent two second transparent electrodes 14. According to the above arrangement, the two adjacent first transparent electrodes 13 in the Y1-Y2 direction are electrically connected via the first connecting portion 20. Further, the first connecting portion 20 and the second connecting portion 21 formed in the opening 30s of the insulating layer 30 are arranged so as not to intersect each other in plan view, and are electrically connected to each other. The state of sexual insulation.

Next, each constituent member will be described. The base material 12 is formed of a light-transmissive film and is formed of a film-form transparent substrate such as polyethylene terephthalate (PET) or a glass substrate such as borosilicate glass. When a film-form transparent substrate is used, the shape of the capacitance sensor 10 can be easily made curved, or the capacitance sensor 10 can be bent. Further, as shown in Figs. 4(a) and 4(b), the surface 12a of one of the substrates 12, that is, the direction at the substrate 12 along the Z1-Z2 direction is normal. The first transparent electrode 13 and the second transparent electrode 14 are provided on the main surface of the main surface at the main surface of the Z1 side. The first transparent electrode 13 and the second transparent electrode 14 are separated from each other by sandwiching the insulating region 18, and are disposed in a state of being electrically insulated.

The first transparent electrode 13 and the second transparent electrode 14 are formed to have translucency and are formed of a material containing a conductive nanowire. As the conductive nanowire, at least one selected from the group consisting of a gold nanowire, a silver nanowire, and a copper nanowire is used as the metal nanowire. . By using a material containing a conductive nanowire, it is possible to simultaneously achieve high light transmittance and low resistance. Further, by using a material containing a conductive nanowire, the deformation performance of the capacitive sensor 10 can be improved.

The material containing the conductive nanowire has a conductive nanowire and a transparent resin layer. The conductive nanowire is dispersed in the resin layer. The dispersibility of the conductive nanowire is ensured by the resin layer. Examples of the material of the transparent resin layer include a polyester resin, an acrylic resin, and a polyurethane resin. Conductivity in the plane of the material containing the conductive nanowire is maintained by bringing a plurality of conductive nanowires into contact with each other at least in part.

The insulating region 18 in a state in which the first transparent electrode 13 and the second transparent electrode 14 are electrically insulated is formed by etching away the conductive nanowire in the transparent resin layer. Here, an example of a method of producing the insulating region 18 in the case where a silver nanowire is used as the conductive nanowire is briefly described. First, a region other than the portion of the insulating region 18 is covered with an etch resist, and the silver nanowire of the insulating region 18 is formed by an iodine-iodized salt solution (for example, an iodine-potassium iodide solution). Silver iodide. Next, the silver iodide is removed by etching using a thiosulfate (for example, a sodium thiosulfate solution). Finally, a resist stripper is used to remove the etch resist. In this manner, the silver nanowire in the transparent resin layer is an extremely small region, and the conductivity of this portion disappears and becomes the insulating region 18. Further, depending on the etching conditions, the insulating region 18 of the silver nanowire which is completely absent in the transparent resin layer can be produced.

The first connecting portion 20 and the second connecting portion 21 are formed to have translucency and are made of a material containing an amorphous oxide material. As the amorphous oxide-based material, amorphous ITO (Indium Tin Oxide), amorphous IZO (Indium Zinc Oxide), amorphous GZO (Gallium-doped Zinc Oxide), and amorphous AZO are used. At least one selected from the group consisting of (Aluminum-doped Zinc Oxide) and amorphous FTO (Fluorine-doped Zinc Oxide).

As the insulating layer 30, for example, a phenol resin (resist) is used.

As shown in FIG. 1, in the non-detection region 17, a plurality of first connection end portions 15 connected to the respective first electrode connection bodies 13C and the first connection end portions 15 are derived therefrom. The first lead-out wiring 151 and the second connecting end portion 16 connected to each of the second electrode connecting bodies 14C and the second lead-out wiring 161 derived from the second connecting end portion 16 are provided. Such derived wirings 151, 161 are shown schematically in FIG. As described below, the first electrode connecting body 13C is electrically connected to the first lead-out wiring 151 via the two connecting regions 15a and 15b, the third connecting body 22, and the first connecting end portion 15, respectively. The second electrode connecting body 14C is electrically connected to the second lead-out wiring 161 via the two connecting regions 16a and 16b, the fourth connecting body 23, and the second connecting end portion 16.

Each of the connection end portions 15 and 16 and each of the lead wires 151 and 161 is formed of a material including a metal such as Cu, a Cu alloy, a CuNi alloy, Ni, Ag, or Au. Each of the lead wires 151 and 161 is electrically connected to a flexible printed circuit board (not shown).

Each of the connection regions 15a, 15b, 16a, and 16b is formed of a transparent conductive material such as ITO or a conductive nanowire. The third connecting portion 22 and the fourth connecting portion 23 are formed of a material containing an amorphous oxide material.

The connection region 15a is oriented toward the first lead-out wiring in the Y1-Y2 direction from the insulating region 18 in which the first transparent electrode 13 and the second transparent electrode 14 are insulated from each other. The first insulating region 18a" extending in the 151 side and the "second insulating region 18b extending along the X1-X2 direction in the non-detecting region 17 on the first lead-out wiring 151 side" are surrounded by It has a slightly pentagonal shape when viewed in plan. At the Y2 side of the connection region 15a, a connection region 15b electrically separated from the connection region 15a by the second insulating region 18b is provided. In the connection region 15a, the length in the Y1-Y2 direction of the first insulating region 18a facing each other and the position of the second insulating region 18b in the Y1-Y2 direction can be adjusted. The area is changed, whereby the impedance value corresponding to the first electrode connecting body 13C can be adjusted.

The connection region 16a is composed of the "insulating region 18" and the "first insulating region 19a extending from the insulating region 18 toward the second lead-out wiring 161 side in the X1-X2 direction" and "in the second The non-detection region 17 on the side of the lead-out wiring 161 is surrounded by the second insulating region 19b extending in the Y1-Y2 direction, and is formed to have a substantially pentagonal shape when viewed in plan. At the X1 side of the connection region 16a, a connection region 16b electrically separated from the connection region 16a by the second insulating region 19b is provided. In the connection region 16a, the length in the X1-X2 direction of the first insulating region 19a facing each other and the position of the second insulating region 19b in the X1-X2 direction can be adjusted. The area is changed, whereby the impedance value corresponding to the second electrode connecting body 14C can be adjusted.

The third connecting portion 22 extends in the Y1-Y2 direction and has a rectangular shape when viewed in plan, and the lower surfaces of the both end portions in the longitudinal direction are disposed in the adjacent two connecting regions 15a. Above 15b. Thereby, the adjacent two connection regions 15a and 15b are electrically connected to each other via the third connection portion 22. Therefore, each of the first electrode connecting bodies 13C is electrically connected to the first lead-out wiring 151 via the two connection regions 15a and 15b and the third connecting portion 22 corresponding to each other. The third connecting portion 22 may be configured by the same material as the first connecting portion 20 and the second connecting portion 21 which will be described later. In this case, the third connecting portion 22 can be simultaneously formed by a process common to the first connecting portion 20 and the second connecting portion 21. Further, by setting the shape of the third connecting portion 22 arbitrarily, the impedance value of the wiring corresponding to the first electrode connecting body 13C can be arbitrarily adjusted.

The fourth connecting portion 23 extends in the X1-X2 direction and has a rectangular shape when viewed in plan, and the lower surfaces of the both end portions in the longitudinal direction are disposed in the adjacent two connecting regions 16a. Above 16b. Thereby, the adjacent two connection regions 16a and 16b are electrically connected to each other via the fourth connection portion 23. Therefore, each of the second electrode connecting bodies 14C is electrically connected to the second lead-out wiring 161 via the two connection regions 16a and 16b and the fourth connecting portion 23 corresponding to each other. The fourth connecting portion 23 may be formed of the same material as the first connecting portion 20 and the second connecting portion 21 which will be described later. In this case, the fourth connecting portion 23 can be simultaneously formed by a process common to the first connecting portion 20 and the second connecting portion 21. Further, by setting the shape of the fourth connecting portion 23 arbitrarily, the impedance value of the wiring corresponding to the second electrode connecting body 14C can be arbitrarily adjusted.

In the capacitive sensor 10, if the finger is brought into contact with the finger from the Z1 side as an example of the operation body, the second transparent electrode 13 near the finger and the finger, and the second finger and the finger are nearby. An electrostatic capacitance is generated between the transparent electrodes 14. The capacitive sensor 10 is capable of calculating the contact position of the finger based on the change in the electrostatic capacity at this time. The capacitive sensor 10 detects the X coordinate (the coordinate of the X1-X2 direction) of the position of the finger based on the change in the electrostatic capacitance between the finger and the first electrode connecting body 13C, and based on the finger and the The change in the electrostatic capacitance between the two electrode connecting bodies 14C detects the Y coordinate (the coordinate in the Y1-Y2 direction) of the position of the finger (self-capacitance detecting type).

In addition, the capacitive sensor 10 may be a mutual capacitance detecting type. In other words, the capacitive sensor 10 can apply a driving voltage to one column of the electrodes of one of the first electrode connecting body 13C and the second electrode connecting body 14C, and detect the first electrode connecting body. The change in electrostatic capacitance between the electrode of the other electrode of 13C and the second electrode connecting body 14C and the finger. As a result, the capacitive sensor 10 detects the Y coordinate of the position of the finger by the other electrode, and detects the X coordinate of the position of the finger by one of the electrodes.

Here, in general, when the transparent electrode is formed of a material containing a conductive nanowire, the contact area between the transparent electrode and the bridge wiring portion may become narrow. That is, the conductive nanowire is ensured to have electrical conductivity between itself and the bridging wiring material by the conductive nanowire exposed at the surface of the transparent electrode. Therefore, when the material of the bridge wiring portion is a material containing a conductive nanowire, the contact between the transparent electrode and the bridge wiring portion is a point contact between the strand and the strand. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridge wiring portion is a line of the strand or a contact between the dots and the surface. Therefore, when a material containing a conductive nanowire is used for the material of the transparent electrode, the contact area between the transparent electrode and the bridging wiring portion may become narrow, which is due to this. There is a situation in which the stability of conduction is lowered. Further, if an electrostatic discharge (ESD; Electro Static Discharge) occurs and a large current flows between the contact portion between the transparent electrode and the bridge wiring portion, the contact portion may locally generate heat and be blown. In other words, if a material containing a conductive nanowire material is used as the material of the transparent electrode, although the deformation performance of the electrostatic capacitance sensor is improved, on the other hand, the conduction stability and the ESD are improved. The situation of reduced patience. In addition, when a crystalline oxide-based material or a metal-based material is used for the material of the bridge wiring portion, the electric resistance at the time of bending may be increased or the bridging wiring portion may be broken.

On the other hand, in the capacitive sensor 10 of the present embodiment, the first connecting portion 20 and the second connecting portion 21 are arranged so as not to intersect each other in plan view, and are first. The first connection surface 20a is provided in the connection portion 20, and the second connection surface 21a is provided in the second connection portion 21, and each connection surface is disposed on a transparent electrode (first transparent electrode) to be electrically connected. 13. The second transparent electrode 14). By this, the contact area between the first transparent electrode 13 and the first connecting portion 20 and the contact area between the second transparent electrode 14 and the second connecting portion 21 can be expanded to achieve conduction stability and ESD tolerance. The reduction is suppressed. In addition, since the first connecting portion 20 and the second connecting portion 21 are arranged so as not to intersect each other in plan view, the manufacturing process can be performed in comparison with the configuration in which the two connecting portions are mutually intersected. Simplified.

The first transparent electrode 13 and the second transparent electrode 14 contain a conductive nanowire, and the first connecting portion 20 and the second connecting portion 21 contain an amorphous oxide material. Therefore, compared with the case where a crystalline oxide-based material or a metal-based material is used for the materials of the first connecting portion 20 and the second connecting portion 21, the deformation performance of the capacitive sensor 10 can be improved. Further, the adhesion between the first transparent electrode 13 and the first connecting portion 20 and the adhesion between the second transparent electrode 14 and the second connecting portion 21 can be ensured. Moreover, it is possible to suppress the rise of the resistance at the time of bending.

When the conductive nanowire is at least one selected from the group consisting of a nylon nanowire, a silver nanowire, and a copper nanowire, compared to the first When an oxide-based material such as ITO is used as the material of the transparent electrode 13 and the second transparent electrode 14, the deformation performance of the capacitive sensor 10 can be improved, and the resistance at the time of bending can be further improved. The rise is suppressed.

When the amorphous oxide-based material is at least one selected from the group consisting of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO, and amorphous FTO, When the crystalline ITO or the like is used for the material of the first connecting portion 20 and the second connecting portion 21, the deformation performance of the capacitive sensor 10 can be improved, and the resistance can be changed for bending. The rise is suppressed. In addition, when a conductive nanowire or the like is used for the material of the first connecting portion 20 and the second connecting portion 21, it is possible to further improve the invisibility of the first connecting portion 20 and the second connecting portion 21 Sex.

As shown in FIG. 4(b), since the first connecting portion 20 is placed on the second transparent electrode 14 with the insulating layer 30 interposed therebetween, it is easier to obtain a larger one in plan view. 1 The area of the joint portion 20. Therefore, the contact area with the first transparent electrode 13 can be ensured to be wide, and the resistance value of the first connection portion 20 can be lowered. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

Since the first connecting portion 20 is provided on the first transparent electrode 13 in a pattern extending in the second direction intersecting the first direction, the first connecting portion 20 can be prevented from intersecting the second connecting portion 21 . The pattern of the first connecting portion 20 to be laid is shortened. Therefore, the resistance value of the first connecting portion 20 can be lowered, and the decrease in the conduction stability and the ESD tolerance can be suppressed. Further, the contact area between the first connecting portion 20 and the first transparent electrode 13 can be widened, and the first connecting surface 20a of the first connecting portion 20 can be widened. Therefore, it is possible to stabilize the conduction. Sexuality and reduction in ESD tolerance are suppressed.

By making the insulating layer 30 a pattern having a rectangular frame shape as shown in FIG. 3(b), since it is easy to obtain a larger area of the first connecting portion 20 in plan view, it is possible to The contact area with the first transparent electrode 13 is ensured to be wide, and the resistance value of the first connecting portion 20 can be lowered. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

Hereinafter, a modification will be described. <First Modification> FIG. 5 is a plan view showing a first modification of the above-described area A1 in the above embodiment. In the above-described embodiment, the first connecting portion 20 is formed in a substantially rectangular frame shape on the rectangular frame-shaped insulating layer 30 as viewed in plan view as shown in Fig. 3(b). The two adjacent second transparent electrodes 14 are arranged on top of each other. Instead of this, the first connecting portion 120 of the first modification is formed on the insulating layer 30 on the X1 side and is formed only on the insulating layer 30 on the X2 side, as shown in FIG. 5 . It is disposed so as to pass only on the X2 side of the two adjacent second transparent electrodes 14. In this case, similarly to the first connecting portion 20 of the above-described embodiment, the first connecting portion 120 on the first pattern 30a on the Y1 side of the insulating layer 30 extends from the central portion thereof to the Y1 side. The first transparent electrode 13 is formed on the ground, whereby the first transparent electrode 13 on the Y1 side and the first connection portion 120 are electrically connected. Further, the first connecting portion 120 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 is formed. The first transparent electrode 13 and the first connecting portion 120 on the side are electrically connected. As a result, the lower side (the first connection surface) of each of the Y1 side end portion and the Y2 side end portion of the first connecting portion 120 is the first transparent one adjacent to the Y1-Y2 direction. The electrodes 13 are in contact, respectively.

Here, the "first connecting portion" is generally along the first direction (Y1-Y2 direction) as in the first connecting portion 20 of the above-described embodiment or the first connecting portion 120 of the first modified example. In the second direction (X1-X2 direction) orthogonal to each other, it is preferable to extend over each of the two first transparent electrodes 13 to be electrically connected, but it is ideal as long as The direction in which the directions intersect may be a direction that is not orthogonal to the first direction. Further, in the second transparent electrode 14, the first connecting portion 20 of the above-described embodiment or the first connecting portion 120 of the first modified example is generally preferably extended along the first direction. It can be formed so as to extend in a direction that does not coincide with the second direction.

In this way, by causing the first connecting portion to extend in a direction intersecting the first direction on each of the two first transparent electrodes 13 to be electrically connected, it is possible to The pattern of the first connecting portion to be laid so as to intersect with the second connecting portion is shortened. Therefore, the resistance value of the first connecting portion can be lowered, and the decrease in the conduction stability and the ESD resistance can be suppressed. Further, the contact area between the first connecting portion and the first transparent electrode 13 can be widened, that is, the first connecting surface of the first connecting portion can be widened. Therefore, it is possible to suppress the decrease in conduction stability and ESD tolerance.

<Second Modification> Fig. 6 is a plan view showing a second modification of the region A1 in the above-described embodiment, and showing an arrangement in which the transparent electrode and the insulating layer are enlarged. Fig. 7(a) is a plan view showing a state in which the second connecting portion is further provided in the region shown in Fig. 6, and Fig. 7(b) is for the region shown in Fig. 7(a). The state in which the first joint portion is provided is a plan view showing the state. Fig. 8(a) is a cross-sectional view taken along line 8A-8A' of Fig. 7(b), and Fig. 8(b) is a cross-sectional view taken along line 8B-8B' of Fig. 7(b).

In the second modification, as shown in FIG. 6, FIG. 7, and FIG. 8(b), through holes 231 and 232 (second via holes) penetrating the insulating layer 230 in the Z1-Z2 direction are formed. Through the through holes 231 and 232, the two adjacent second transparent electrodes 14 are electrically connected by the second connecting portion 221. Here, the surface on the lower surface of the second connecting portion 221 on the through holes 231 and 232 is the second connecting surface, and the second connecting surface is positioned on the upper side of the second transparent electrode 14. According to this configuration, the pattern shape of the two first transparent electrodes 13 adjacent to the two second transparent electrodes 14 to be electrically connected can be easily made by the second connecting portion 221. The adjacent second transparent electrodes 14 are connected to each other.

In the second modification, as shown in FIG. 6, the regions adjacent to the two first transparent electrodes 13 and the two second transparent electrodes 14 are in the Z1-Z2 direction from the Z1 side. In the plane observation of the observation, an insulating layer 230 covering a portion of the first transparent electrode 13 and a portion of the second transparent electrode 14 is provided. The insulating layer 230 has a rectangular shape in plan view, and two through holes 231 and 232 are formed at positions corresponding to each of the adjacent two second transparent electrodes 14. The two through holes 231 and 232 are formed so as to penetrate the insulating layer 230 in the Z1-Z2 direction (Fig. 8(b)).

As shown in FIG. 7(a), the insulating layer 230 is formed with a second connecting portion 221 which is formed in a rectangular shape in a plane extending in the X1-X2 direction. In the second connecting portion 221, both end portions in the longitudinal direction are extended to positions where the two through holes 231 and 232 are covered. With this configuration, the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14 is electrically connected to the second connection portion 221 via one of the through holes 231, and is on the X2 side. The second transparent electrode 14 is electrically connected to the second connection portion 221 via the other via hole 232, and the two adjacent second transparent electrodes 14 are connected via the second connection portion by the connection. 221 is electrically connected.

Further, as shown in FIG. 7(b), in the same manner as the first connecting portion 20 of the above-described embodiment, the insulating layer 230 is formed to have the first side so as to surround the outer side of the second connecting portion 221. Connecting portion 220 (hatched portion). As shown in FIG. 7(b) and FIG. 8(a), the first connecting portion 220 on the first pattern 230a on the Y1 side of the insulating layer 230 extends from the central portion thereof to the Y1 side. The transparent electrode 13 is formed on the ground, whereby the first transparent electrode 13 on the Y1 side and the first connection portion 220 are electrically connected. Further, the first connecting portion 220 on the third pattern 230c on the Y2 side of the insulating layer 230 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 is formed. The first transparent electrode 13 and the first connecting portion 220 on the side are electrically connected. In other words, the lower surface of each of the Y1 side end portion and the Y2 side end portion of the first connecting portion 220 is the first connecting surface 220a, and the two first transparent electrodes adjacent to each other in the Y1-Y2 direction. 13 for contact (Fig. 8(a)).

<Third Modification> Fig. 9(a) is a cross-sectional view showing a third modification example of a cross-sectional view taken along line 8A-8A' shown in Fig. 7(b) of the second modification. 9(b) is a cross-sectional view in a third modification of the cross-sectional view taken along the line 8B-8B' shown in FIG. 7(b) of the second modification. That is, Fig. 9 (a) and (b) are cross-sectional views corresponding to the positions corresponding to Figs. 8 (a) and (b), respectively.

In the third modification, in addition to the through holes 231 and 232 (second through holes) of the second modification, the through holes 341 and 342 which penetrate the insulating layer 230 in the Z1-Z2 direction are further provided. (1st through hole). In addition, the first connecting portion 320 is formed so as to surround the outer side of the second connecting portion 221 on the insulating layer 230. However, the first connecting portion 20 is not the same as the first connecting portion 20 and the first embodiment of the above-described embodiment. The first connecting portion 120 of the modified example and the first connecting portion 220 of the second modified example are generally extended to the first transparent electrode 13 and are not connected to the first transparent electrode 13.

The through holes 341 and 342 are formed at positions corresponding to each of the adjacent two first transparent electrodes 13 respectively. Further, the two through holes 341 and 342 are covered by the first connecting portion 320. With this configuration, the first transparent electrode 13 on the Y1 side of the two adjacent first transparent electrodes 13 is electrically connected to the first connecting portion 320 via one of the through holes 341, and is on the Y2 side. The first transparent electrode 13 is electrically connected to the first connection portion 320 via the other via hole 342, and the two adjacent first transparent electrodes 13 are connected via the first connection portion by the connection. 320 is electrically connected. Here, the surface on the lower surface of the first connecting portion 320 on the through holes 341 and 342 is the first connecting surface, and the first connecting surface is located above the first transparent electrode 13. Further, the insulating layer 230 has a configuration in which the through holes 341 and 342 (first through holes) are provided in addition to the through holes 231 and 232 (second via holes), and the first connecting portion 320 and the second connecting portion are provided. Since the portion 221 is disposed on the same insulating layer 230, the restriction on the pattern shape is reduced, whereby the reduction in conduction stability and ESD resistance can be suppressed. Moreover, since it is disposed on the insulating layer 230 which is slightly planar, the pattern of the first connecting portion 320 and the second connecting portion 221 can be formed with good precision.

Other modifications will be described. In the following, although the modification of the above embodiment is described, the first to third modifications may be applied.

When the first connecting portion 20 and the second connecting portion 21 are removed in plan view as the first transparent electrode 13 and the second transparent electrode 14, a pattern containing an amorphous oxide material is disposed. In the layer, the pattern layer has the same appearance or reflectivity as the first connecting portion 20 and the second connecting portion 21, and the first connecting portion 20 and the second connecting portion 21 are difficult to be visually recognized. Therefore, it is ideal. Further, when the pattern layer is electrically connected to one of the first connecting portion 20 and the second connecting portion 21 and is insulated from the other connecting portion, the transparent layer in which the pattern layer can be disposed can be disposed. The contact area between the connecting portion and the corresponding connecting portion is substantially expanded, whereby the reduction in conduction stability and ESD tolerance can be suppressed.

In the connection regions 15a, 15b, 16a, and 16b, the pattern layer containing the amorphous oxide material is disposed in the region where the third connecting portion 22 and the fourth connecting portion 23 are removed. The pattern layer has the same appearance or reflectivity as the third connecting portion 22 and the fourth connecting portion 23, and the third connecting portion 22 and the fourth connecting portion 23 are difficult to be visually recognized. ideal. Further, when the pattern layer is electrically connected to each of the third connecting portion 22 and the fourth connecting portion 23, the contact area between the connecting region where the pattern layer is disposed and the connecting portion corresponding thereto can be used. Substantial expansion, by which it is possible to suppress the stability of conduction and the reduction of ESD tolerance. The pattern layer containing the amorphous oxide-based material may be provided between the connection region 15b and the first connection end portion 15 and between the connection region 16b and the second connection end portion 16.

Preferably, the first impedance setting portion including the amorphous oxide material is formed between the adjacent first transparent electrode 13 and the first lead-out wiring 151, and the adjacent second transparent electrode 14 and the first Between the lead wires 161, a second impedance setting portion including an amorphous oxide material is formed. In this configuration, by changing the pattern area and shape of the first impedance setting unit and the second impedance setting unit, the group of the first transparent electrodes 13 (the first electrode connecting body 13C) along the first direction can be formed. The impedance and the impedance of the group of the second transparent electrodes 14 (the second electrode connecting body 14C) along the second direction coincide with each other. Therefore, it is possible to prevent the current from being concentrated at a single place, and it is possible to suppress the decrease in ESD resistance.

The present invention has been described with reference to the above-described embodiments, but the present invention is not limited to the above-described embodiments, and modifications and changes can be made without departing from the spirit and scope of the invention. [Industry use possibility]

As described above, the electrostatic capacitance sensor of the present invention is useful in that it can suppress the situation in which the conduction stability and the ESD tolerance are lowered.

10: Capacitive sensor 11: Detection region 12: Substrate 12a: Surface (main surface) 13: First transparent electrode 13C: First electrode connection body 14: Second transparent electrode 14C: Second electrode connection body 15 First connection end portions 15a and 15b: connection region 151: first lead-out wiring 16: second connection end portions 16a and 16b: connection region 161: second lead-out wiring 17: non-detection region 18: insulating regions 18a and 19a: First insulating region 18b, 19b: second insulating region 20: first connecting portion 20a: first connecting surface 21: second connecting portion 21a: second connecting surface 22: third connecting portion 23: fourth connecting portion 30: Insulation layers 30a, 30b, 30c, and 30d: pattern 30s: opening 120: first connection portion 220: first connection portion 220a: first connection surface 221: second connection portion 230: insulating layers 230a, 230c: patterns 231, 232 : through hole (second through hole) 320: first connecting portion 341, 342: through hole (first through hole) A1: region

Fig. 1 is a plan view showing an enlarged view of a portion of a detection area of a capacitance type sensor according to an embodiment of the present invention. [Fig. 2] (a) is a plan view showing the arrangement of the transparent electrodes in the area A1 of Fig. 1, and (b) is an insulating layer provided for the area shown in Fig. 2(a). State plan for presentation. [Fig. 3] (a) is a plan view showing a state in which a second connecting portion is further provided in the region shown in Fig. 2(b), and (b) is shown in Fig. 3(a). The state in which the first connecting portion is provided in the region is a plan view showing the state. Fig. 4 (a) is a cross-sectional view taken along line 4A-4A' of Fig. 3(b), and (b) is a cross-sectional view taken along line 4B-4B' of Fig. 3(b). Fig. 5 is a plan view showing an enlarged display of the detection area in the first modification. Fig. 6 is a plan view showing an enlarged view of the arrangement of the transparent electrode and the insulating layer in the detection region of the second modification. [Fig. 7] (a) is a plan view showing a state in which a second connecting portion is further provided in the region shown in Fig. 6, and (b) is for the region shown in Fig. 7 (a). The state in which the first joint portion is provided is a plan view showing the state. Fig. 8 (a) is a cross-sectional view taken along line 8A-8A' of Fig. 7(b), and (b) is a cross-sectional view taken along line 8B-8B' of Fig. 7(b). [Fig. 9] (a) is a cross-sectional view in a third modification of the cross-sectional view taken along the line 8A-8A' shown in Fig. 7(b) of the second modification, and (b) is a cross-sectional view of (b) FIG. 3 is a cross-sectional view showing a third modification of the cross-sectional view taken along the line 8B-8B' shown in FIG. 7(b) of the second modification.

Claims (25)

An electrostatic capacitance type sensor comprising: a substrate having a light transmissive property; and a plurality of first transparent electrodes at a detection area of a main surface of one of the substrates The first direction is arranged side by side, and is translucent, and includes a conductive nanowire; and a plurality of second transparent electrodes are disposed at the detection region along a line intersecting the first direction Two directions are arranged side by side, and are translucent, and include a conductive nanowire; and the first connecting portion electrically connects the two adjacent first transparent electrodes to each other and includes The second oxide-based material and the second connection portion electrically connect the two adjacent second transparent electrodes to each other, and include an amorphous oxide-based material, and the first connection portion and the first portion The two connecting portions are arranged so as not to intersect each other in a plane view in a direction orthogonal to the main surface, and the first connecting portion is provided with a Provided on the adjacent two first transparent electrodes The first connection surface is electrically connected to each of the first transparent electrodes, and the second connection portion is provided with the second one of the adjacent two The second connection surface on the transparent electrode is electrically connected to each of the second transparent electrodes, and the capacitance sensor further includes: The first lead-out wiring is electrically connected to the plurality of first transparent electrodes connected by the plurality of first connection portions, and the second lead-out wiring is connected to the second connection by a plurality of The plurality of connected second transparent electrodes are electrically connected to each other, and the first amorphous conductive material is formed between the adjacent first transparent electrodes and the first lead-out wiring. In the impedance setting unit, a second impedance setting unit including an amorphous oxide material is formed between the adjacent second transparent electrode and the second lead-out wiring. The capacitive sensor according to claim 1, wherein in the region where the first connecting portion is formed, one of the second transparent electrodes is formed under the planar view. In the insulating layer to be covered, the first connecting portion that electrically connects the two first transparent electrodes is disposed on the second transparent electrode adjacent to the two first transparent electrodes On the insulation layer. The capacitive sensor according to the second aspect of the invention, wherein the first connecting portion is provided on each of the first transparent electrodes that are electrically connected A pattern extending in a direction crossing the first direction. The electrostatic capacitance sensor according to the third aspect of the invention, wherein the first connection portion is provided on each of the first transparent electrodes that are electrically connected a pattern extending along the second direction, and the insulating layer on each of the two second transparent electrodes adjacent to the two first transparent electrodes is provided along the insulating layer a pattern extending in the first direction. The capacitive sensor according to any one of claims 2 to 4, wherein the insulating layer is formed to face the second transparent electrode and penetrate the insulating layer up and down The second through hole passes through the second through hole, and the adjacent second transparent electrode is electrically connected by the second connecting portion. The electrostatic capacitance sensor according to claim 5, wherein the insulating layer is formed by covering one of the first transparent electrodes and forming the insulating layer in the planar view. a first via hole that faces the first transparent electrode and penetrates the insulating layer up and down, and the adjacent first transparent electrode is electrically connected by the first connection portion via the first via hole. . The electrostatic capacitance sensor according to the first aspect of the invention, wherein the first transparent electrode and the second transparent electrode are in the planar view, except for the first connecting portion and the first A pattern layer containing an amorphous oxide-based material is disposed in a region other than the connecting portion. The capacitive sensor according to claim 7, wherein the pattern layer is electrically connected to one of the first connection portion and the second connection portion, and is mutually connected to each other insulation. The electrostatic capacitance sensor according to claim 1, wherein the conductive nanowire material is formed from a gold nanowire material, a silver nanowire material, and a copper nanowire material. At least one of the selected groups. The capacitive sensor according to claim 1, wherein the amorphous oxide material is made of amorphous ITO, amorphous IZO, amorphous GZO, or amorphous. At least one selected from the group consisting of AZO and amorphous FTO. An electrostatic capacitance type sensor comprising: a substrate having a light transmissive property; and a plurality of first transparent electrodes at a detection area of a main surface of one of the substrates The first direction is arranged side by side, and is translucent, and includes a conductive nanowire; and a plurality of second transparent electrodes are disposed at the detection region along a line intersecting the first direction Two directions are arranged side by side, and are translucent, and include a conductive nanowire; and the first connecting portion electrically connects the two adjacent first transparent electrodes to each other and includes The second oxide-based material and the second connection portion electrically connect the two adjacent second transparent electrodes to each other, and include an amorphous oxide-based material, and the first connection portion and the first portion The two connecting portions are arranged so as not to intersect each other in a plane view in a direction orthogonal to the main surface, and the first connecting portion is provided with a Provided on the adjacent two first transparent electrodes The first connection surface is electrically connected to each of the first transparent electrodes, and the second connection portion is provided with the second one of the adjacent two a second connection surface on the transparent electrode, the second connection surface being electrically connected to each of the second transparent electrodes, and being formed in the plane in a region where the first connection portion is formed An insulating layer covering a portion of the second transparent electrode, The first connecting portion that electrically connects the two first transparent electrodes is disposed on the insulating layer on the second transparent electrode adjacent to the two first transparent electrodes. The insulating layer is formed with a second via hole that faces the second transparent electrode and penetrates the insulating layer up and down, and the second transparent via is adjacent to the second transparent electrode by the second via The connection portion is electrically connected. The capacitive sensor according to claim 11, wherein the first connecting portion is provided on each of the first transparent electrodes that are electrically connected. A pattern extending in a direction crossing the first direction. The electrostatic capacitance sensor according to claim 12, wherein the first connection portion is provided on each of the first transparent electrodes that are electrically connected a pattern extending along the second direction, and the insulating layer on each of the two second transparent electrodes adjacent to the two first transparent electrodes is provided along the insulating layer a pattern extending in the first direction. An electrostatic capacitance type sensor according to claim 11, wherein In the above-described insulating layer, one of the first transparent electrodes is covered, and a first pass that faces the first transparent electrode and penetrates the insulating layer in the upper and lower layers is formed in the insulating layer. The hole passes through the first through hole, and the adjacent first transparent electrode is electrically connected by the first connecting portion. The electrostatic capacitance sensor according to claim 11, wherein the first transparent electrode and the second transparent electrode are in the planar view, except for the first connecting portion and the first A pattern layer containing an amorphous oxide-based material is disposed in a region other than the connecting portion. The capacitive sensor according to claim 15, wherein the pattern layer is electrically connected to one of the first connecting portion and the second connecting portion, and is mutually connected to each other insulation. The electrostatic capacitance sensor according to claim 11, wherein the conductive nanowire material is formed from a nanowire material, a silver nanowire material, and a copper nanowire material. At least one of the selected groups. The capacitive sensor according to claim 11, wherein the amorphous oxide material is made of amorphous ITO, amorphous IZO, amorphous GZO, or amorphous. At least one selected from the group consisting of AZO and amorphous FTO. An electrostatic capacitance type sensor comprising: a substrate having a light transmissive property; and a plurality of first transparent electrodes at a detection area of a main surface of one of the substrates The first direction is arranged side by side, and is translucent, and includes a conductive nanowire; and a plurality of second transparent electrodes are disposed at the detection region along a line intersecting the first direction Two directions are arranged side by side, and are translucent, and include a conductive nanowire; and the first connecting portion electrically connects the two adjacent first transparent electrodes to each other and includes The second oxide-based material and the second connection portion electrically connect the two adjacent second transparent electrodes to each other, and include an amorphous oxide-based material, and the first connection portion and the first portion The two connecting portions are arranged so as not to intersect each other in a plane view in a direction orthogonal to the main surface, and the first connecting portion is provided with a Provided on the adjacent two first transparent electrodes a first connection surface, wherein the first connection surface is electrically connected to each of the first transparent electrodes; The second connecting portion is provided with a second connecting surface that is disposed on each of the two adjacent second transparent electrodes, and the second connecting surface is formed by each of the second transparent electrodes In the first transparent electrode and the second transparent electrode, the first transparent electrode and the second transparent electrode are arranged to have amorphous content in a region other than the first connecting portion and the second connecting portion. A patterned layer of an oxide-based material. The capacitive sensor according to claim 19, wherein in the region where the first connecting portion is formed, one of the second transparent electrodes is formed in the plane view. In the insulating layer to be covered, the first connecting portion that electrically connects the two first transparent electrodes is disposed on the second transparent electrode adjacent to the two first transparent electrodes On the insulation layer. The electrostatic capacitance sensor according to claim 20, wherein the first connection portion is provided on each of the first transparent electrodes that are electrically connected A pattern extending in a direction crossing the first direction. As described in claim 21, the capacitive sensor is In the first connection portion, each of the first transparent electrodes that are electrically connected is provided with a pattern extending along the second direction, and The insulating layer on each of the two second transparent electrodes adjacent to the two first transparent electrodes is provided with a pattern extending along the first direction. The capacitive sensor according to claim 19, wherein the pattern layer is electrically connected to one of the first connecting portion and the second connecting portion, and is mutually connected to each other insulation. The electrostatic capacitance sensor according to claim 19, wherein the conductive nanowire material is formed from a nylon nanowire, a silver nanowire, and a copper nanowire. At least one of the selected groups. The capacitive sensor according to claim 19, wherein the amorphous oxide material is made of amorphous ITO, amorphous IZO, amorphous GZO, or amorphous. At least one selected from the group consisting of AZO and amorphous FTO.